TW200952119A - Semiconductor device and method of manufacturing same - Google Patents

Abstract

To develop a reduction treatment method for wiring that is capable of minimizing damage to the interlayer insulating film during the manufacture of a semiconductor device. A method of manufacturing a semiconductor device comprising a conductive member and an insulating film provided on a substrate, the method including: forming a conductive member on a substrate, forming an insulating film on top of the conductive member, removing the insulating film from the conductive member, and blowing an organic silane gas and hydrogen gas across the conductive member to reduce the oxidized regions on the conductive member, wherein these oxidized regions are formed on the conductive member when the insulating film is removed.

Description

[Technical Field] [Technical Field] The present invention relates to a method of reducing a wiring member (conductive member) in a semiconductor device and a method of manufacturing the same. [Prior Art] [0002] As disclosed in Japanese Patent Laid-Open Publication No. 2004-71956, after the side ashing step, the cleaning step _ exposed copper (Cu) _, the green portion removes the oxidized portion of the copper (Cu) wiring, For the treatment before the formation of the upper wiring layer, a reducing gas or a secret gas such as NH3 is used, and the substrate is heated to perform 'or use argon (& thief to perform antimony ore to remove copper oxide, etc. /疋 ' 还原 Use a reducing gas or a passive gas to carry out a reduction treatment under heating, ^ 曰, damage caused by the interlayer insulating film of the domain or carbon as the main component. If the use of the 'secret copper (Cu) will be deposited The insulating film is on the side, and the characteristics are deteriorated. In addition, the energy transfer of argon (Ar) to copper (Cu) is transferred to: ί, efficiently removes copper oxide (CU〇4 CU2〇). The other φ, due to = In particular, the energy transfer efficiency of carbon is high, so there will be ^ = :=°1. The barrier film formation step after reduction treatment: Ϊ, sputtering (PVD) method in this case, for The interlayer insulating film may cause a large [invention] (the problem to be solved by the invention) Line ΐΪΪ 法 法 法 钱 发 发 发 发 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 The present invention is as follows, for example, a method for manufacturing a semiconductor device, a semiconductor device manufactured by using a step guiding member and an insulating layer, and characterized in that a conductive member is formed over the substrate. Forming the insulating layer on the conductive member to remove the insulating layer above the conductive member; and in order to restore the oxygen-deposited region on the [〇=] member, there will be a gas-filled air-gas blow.

The manufacturing method described above produces a semiconductor package, and the damage caused to the sidewalls of the via hole and the wiring 4 a 3 insulating film is minimized, and the oxidized wiring _' can be used. In particular, when the fluorocarbon compounding of the insulating film is performed, since the gas carbon 匕 δ film has low financial property due to the reduction treatment, it is more effective to use the method described. By minimizing the damage to the interlayer insulating film, the adhesion between the bovine and the interlayer insulating film can be improved, and the highly reliable semiconductor device C can be manufactured, and the blowing step can further include: exciting the organic decane by applying microwaves. Gas, the steps with hydrogen. By applying the method to a semiconductor manufacturing method, for example, to carry out a reduction treatment at a low temperature, it is possible to effectively reduce the oxidized portion of the wiring material by using a microwave excitation gas. For example, it is effective to use an interlayer insulating film which is insensitive to heat or the like. [_] The blowing step ' can blow the organic decane gas and the hydrogen gas by raising the substrate temperature from 15 ° C to 350 ° C. By applying this technique to the semiconductor 200952119, it is possible to perform the reduction of the oxidized portion more effectively by simply blowing the organic stone to the oxidized portion of the wiring material. The ϋ人风步骤' also raises the substrate temperature from 15〇〇c to 3(8). The van of C = will be organic Wei gas and hydrogen money. In the case of the semiconductor method, the method of the semiconductor is used. In the case of simply blowing the organic stone and the helium gas in the oxidized part of the wiring material, the oxidation part can be more effectively performed [0011] ❹ ❹ There is also = the financial body can also be thiol Wei gas (si (CH3) x). The organic stone is burned, and the field y is an early y-based Wei gas, a dimethyl Wei gas, a trimethyl Wei gas burning gas, or the like. The blowing step' may further comprise the step of blowing the hydrogen gas by blowing the organic stone. The conductive member may also be formed of a material containing copper. The insulating film may also be a fluorocarbon film or a SiCN film. [0012] ', another secret of the present invention may also be a manufacturing method of the kind of turn-over, which is a semi-conductive hard-wearing layer which is manufactured on the upper layer of the substrate, and is characterized by comprising the following steps: The insulating layer (10) is formed as a conductive member; the portion of the plurality of insulating layers is removed and the portion of the insulating layer is removed by the cleaning of the insulating layer, or by cleaning the multilayer insulating layer, for the oxidized portion of the rotating member The organic decane gas and hydrogen gas are blown and reduced. [0013] By manufacturing the semiconductor package by the above-described manufacturing method, damage to the sidewalls such as the interlayer insulating film in the via hole and the wiring trench can be minimized, and the oxidized wiring can be reduced. In particular, when a fluorocarbon compound or the like is used for the interlayer insulating film, the above method is more effective because the carbon-free compound film has low resistance to damage due to the reduction treatment. By minimizing the damage to the interlayer insulating film, the adhesion of the insulating film between the conductive members and the interlayer can be improved, and a highly reliable semiconductor device can be manufactured. [0014] The removing step may include the step of forming an opening in the plurality of insulating layers. The 200952119 barrier is reduced by the oxidized portion of the $ electrical component. This step can be a semiconductor device manufactured by a method comprising the following steps: a square gas on a substrate; a barrier film; and a secret for the conductive member [0016] The above manufacturing method can be used to manufacture a swivel device, which can be reduced as much as possible by the inter-layer insulation in the trench, and when the oxidized compound is used, the fluorocarbon is used as the edge film, and the interlayer insulating film is not preferable. The damage can improve the adhesion of the conductive insulating film, and can manufacture a highly reliable semiconductor device.

After the formation of the resistive film, the opening of the insulating film is formed before the side of the film is blocked. [0018] And the step of hydrogen. By the method of manufacturing the semiconductor in a thin manner, the oxidized portion of the preparation material will have a rich body and a shape, and the reduction of the oxidized portion can be performed more effectively. [0019] In the blowing step, the organic Wei gas and the hydrogen gas may be blown by raising the temperature of the substrate from 15 〇〇c to 35 。. By applying this technique to the semi-conductor 200952119 > ί ίί method, she can more effectively carry out the oxidation part by simply blowing the organic Wei gas and hydrogen gas into the oxidized portion of the wiring material. [0020] 7' The organic decane gas may also be a trimethyl decane gas. [0021] Another aspect of the present invention may be a method of fabricating a semiconductor device, characterized in that the step of forming a plurality of wiring layers on the upper substrate comprises blowing the contact portions between the wiring layers of each other using an organic germane gas and hydrogen gas. The steps. [0022] 〇 The blowing step may further comprise: applying a microwave to the organic decane gas and the hydrogen step. The blowing step increases the temperature of the substrate from 150 〇c to 35 〇, and blows the organic decane gas and hydrogen gas. (Effect of the Invention) By manufacturing the semiconductor device by the above-described manufacturing method, damage to the sidewalls of the interlayer insulating film or the like in the via hole and the wiring trench can be reduced as much as possible, and the wiring which has been deuterated can be reduced. In particular, when a fluorocarbon compound or the like is used for the interlayer insulating film, the above method is more effective because the fluorocarbon compound film has low financial property due to damage caused by the reduction treatment. The semiconductor device can be manufactured with high reliability by minimizing damage to the interlayer insulating film and improving the adhesion between the conductive member 0 and the interlayer insulating film. [Embodiment] (Best Mode for Carrying Out the Invention) [0024] First, a method of manufacturing a semiconductor device of the present invention will be described. The method of manufacturing a semiconductor device of the present invention can employ, for example, a conventional dual damascene method (DualDam_ascene), a first metal damascene method (SingleDamascene), and the like. The method for producing a semiconductor device of the present invention specifically includes the following steps. [0025] A first interlayer insulating film in which a conductive member is buried is formed over the substrate. 7 200952119, a step of forming a second interlayer insulating film and a cap layer on the first barrier insulating film and the conductive member, and forming a second interlayer insulating film and a cap layer on the etching stopper, and f-axis forming The second system does not completely cover the red metal and the wiring trenches 4 by etching to remove the etching stopper film, exposing the surface of the conductive member and the sidewalls in the via hole and the wiring trench, and blowing the organic germane gas. And a step of hydrogen, a step of forming a barrier film on the sidewalls of the via hole and the wiring trench, a step of depositing a conductive member in the via hole and the wiring trench, and a step of mechanically grinding the material along the material surface The step of grinding causes the electrical component to remain only in the through hole and the wiring trench. The above steps will be specifically described below with reference to FIGS. 1 to 9. Fig. 1 shows that a first interlayer insulating film 2 is formed on a semiconductor of the present invention, and a conductive member 3 is filled in the interlayer insulating film 2. Further, an etching stopper film 4 is formed on the i-th interlayer insulating film conductive member 3. , [0027]

Chemical Vapor Deposition). At this time, the thickness of the i-th interlayer film may be set to be about 100 nm to 300 nm. For the first interlayer insulating film 2, for example, bismuth (Si〇2), nitrite (SixNy), nitridane (siCN), si〇N, SiCOH, P-port CFX, or the like can be used. n H [0028] In the case of ", the conductive member is preferably made of a conductive material containing, for example, one or more kinds of metal elements as a main component. The conductive member is preferably composed of copper as a main component. The conductive member can achieve low resistance by means of a knife. In addition, the conductive member may be made of aluminum or the like. In addition, it may mean that the conductive member 3 is formed in an amount of about 5% or more when the entire conductive member is 100%, and the plating method and the electrolysis can be performed. Electroplating method or electroless plating The formation of the first interlayer insulating film 2 can be utilized, for example, (Chemical Vapor Deposition 200952119) On the other hand, the etching barrier film 4 can be formed by, for example, a method of etching. As the material of the film 4, for example, iridium oxide (Si〇2), tantalum nitride (SixNy), carbon ruthenium (SiC), tantalum nitride (SiCN), SiON, SiCO, SiCHO, or the like can be used. The barrier film 4 is etched. When SiCN is used as a material, the film forming gas is, for example, methane and decane, monoterpene (MMS), dimethyl decane (DMS), trimethyl decane (TMS), and tetrakisyl chloride (TMS). ), dream azane, etc. can be used in combination with these gases. In addition, in addition to the above gases, nitrogen (N2), gas (can be added) NH3) is formed into a film. The film thickness of the resistive resistive film 4 can be set to about 5 nm to 60 nm. [0030] Next, Fig. 2 will be described. Fig. 2 shows one step of the manufacturing method of the semiconductor device of the present invention. The step of forming the second interlayer insulating film 5 on the surface of the resist film 4 illustrated in Fig. 1. [0031] A method of forming the second interlayer insulating film is, for example, a CVD method, etc. The second interlayer insulating film can be, for example, an oxidized second. (Si02), nitrite (sixNy), nitriding dream (SiCN), SiON, SiCOH, CHX, CF#. The second interlayer insulating film 'is more preferably synthesized by breaking atoms (c) and fluorine atoms (F) The fluorocarbon film, as used herein, may mean, for example, a CF film having a ratio of a carbon atom to a fluorine atom of about 1:1 in the film. Further, the CF film may be used. For example, a film containing a carbon atom and a fluorine atom as a constituent component of the film of 95% or more and containing another component of about 5% or less. [0032] When a fluorocarbon film is formed by a CVD method as a second interlayer insulating film, a material gas ( As the film forming gas), c2f4, (: 2f6, c3f8, c4f8, c5f8, e6p6, ch2f2, CHF3, etc. may be used. In the fluorocarbon film, hydrogen may be partially contained. In this case, the CVD apparatus may use either a parallel plate type CVD apparatus or a CVD apparatus using a microwave plasma using rlsa (radiation slot antenna). The film thickness of the second interlayer insulating film is preferably 70 nm to 280 nm. [0033] Next, Fig. 3 will be described. Fig. 3 shows one of the manufacturing methods of the semiconductor device of the present invention 9 2 〇〇 952 ii 9 2 . . Fig. 3 shows that the cover film 6 is further formed on the second interlayer insulating film 5 illustrated in Fig. 2. The method of forming the cover film 6 is, for example, a ffiCVD method. The cover film 6 can use oxygen cut_), nitrided ixNy), carbonized stone (si〇 and 'sico'SiCHo# ° its stone jm, into a body such as a burnt and Wei, monomethyl decane (difficult , dimethyl 2-J^ S), dimethyl decane (TMS), tetramethyl decane (TMS), decazane, etc. The two bodies are used together. In addition to the above gases, a gas can be added. 3) Wait for the film to form. The film thickness ' of the cover film 6 can be set to about 3 〇 nm to 0035 minutes. The same material can be used for the resist film 4 and the cover film 6, and the enamel or the like can be side-side. Cover. After the two via holes and the conductive members in the wiring trench are used (10) [0036] Fig. 4 is explained. Figure 4 shows a semiconductor device of the present invention. Fig. 4 is a transition through the second layer between the second layer shown in Fig. 3. In _, the green hole and the mask have a π opening. Mask example #上^^ Domain shape [0037] The insulating film 5 and the cover film 6 can be used. Next, the Y and the wiring groove 7 are implemented by the second inter-layer money engraving method or the dry shoe engraving method. This side can be utilized, for example, wet. Next, Fig. 5 will be described. Fig. 5 shows the semiconductor paste method of the present invention. , u^2il9 - Part 8 is oxidized to form CuO, external ring Wei's surface of the conductive member [〇〇38] After the etching barrier film 4 is removed by etching, 'usually the aforementioned conductive member is exposed to the outside of the US step 8 is oxidized to form CU0, (4) Table Ο [2] The partial oxidation or reduction of the oxidized layer is performed for this purpose by performing the interlayer insulating film and the sidewall or groove of the film of the barrier film: U is subjected to reduction treatment by the steps of FIG. , then do not live ° : 疋, restore. Also, if you follow the f 8 complete 绫 绫 绫 曾 曾 曾 曾 吟!还原 Reductive treatment, when the second layer can be obtained, it can be cut as the fluorocarbon film of the second layer of the second layer, ^r, r; rc " ^ cf , lack - ', and Km; when the wall is subjected to the organic Wei gas and chlorine blowing, the step of lifting the through hole can be more effective.

If the predetermined temperature is as high as about 縦, and the through hole and the distribution process are performed, the V electrical component (for example, Cu) is old because of the danger of _ deformation: the preferred temperature is preferably below the boot, if In the vicinity of 300t, the adhesion of the film of the layer 2 of the film is further improved. If it is considered that the interlayer insulation is about 15G ° C ~ 3 thieves blow air treatment (TMS, etc.). When you are idle, you can use the material to make the insulation film that is not resistant to heat. When you are in the process of reducing the insulation, you can do the reduction step 'but' but in this case, by not heating up, the gas can be 2 Drag and drop the organic stone gas and argon gas in the through hole and the wiring groove. By (4) the silk body, the hydrogen gas, or both, the plasma assisted reduction: the electric charge blowing step, It is possible to carry out the oxidation part more effectively. After Li and Chang recorded it, the borrower Qian Ya gas is treated with plasma to carry out the swarf π 2 ~ 丨月取粮W an open, 疋化, You can restore it efficiently in the reduction zone of the Tianjia. The gas plasma is used to produce the device, or the amount of money used for the treatment. Wei, so you can try to do it at low temperature. [0043] On the other hand, after a few minutes (about 3 minutes, etc.), hydrogen gas is introduced into the gas. [0044] In addition, after introducing hydrogen, organic is introduced. ❹ The type of organic Wei gas is not limited, for example, the most effective of the alkane. The organic t gas used in the m, etc.), etc. 'The use of the triterpene based negative decane rolling body can be only one type, or a plurality of mixed use. [0045] In the first step, the formation of the barrier film 9 is performed in the via hole and the wiring trench, and the formation of the barrier film 9 can be performed, for example, by sputtering. Here, along with 12.200952119 and the groove (4) and the cover surface, the film is formed in the atomic intrusion layer of the intervening member. [0046] The adhesion between the conductive member and the second interlayer insulating film is improved by ϊ'ίϊϊίΐ 2 ίί 抑 电 电 电 电 电 电 电 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第 第The composition may be laminated, and the case may be made by blocking the Ta/TaN layer. Ta is the lower layer, and the upper layer of Cu is bonded to the upper layer to make a high-resistance hybrid yarn Γ °. The two barrier film is a medium containing a metal element, which can be formed only by a metal element, and other than the gold f70 element. Contains other elements than metals. The barrier film can contain only one type of material. • j*70 element can also contain more than 2 kinds of metal elements. When forming a barrier film, it has the ability to suppress conduction. The effect of diffusion of CFx, etc. Further, the barrier film has an effect of improving the adhesion between the conductive member and the interlayer insulating film. [0048] Next, Fig. 8 will be described. Fig. 8 shows a method of manufacturing the semiconductor device of the present invention. One step. Fig. 8 is a step of introducing a conductive member (7) after forming a barrier film in the via hole and the wiring trench. Here, the conductive member 10 is filled in the through hole and the wiring trench, and the conductive member is formed to cover the surface of the barrier film. The conductive member is preferably composed mainly of copper. The conductive member can achieve low resistance wiring by using copper. Conductive members except . Further, the main component herein may also mean a component in which the entire conductive member is set to have a ratio of about 50% or more. As the conductive member, a conventional method can be used. A sputtering method, an electrolytic plating method, an electroless plating method, or the like can be used. [_] Next, Figure 9 is explained. Fig. 9 shows a step of the method for fabricating the semiconductor device of the present invention. Fig. 9 shows a step of introducing the conductive member 10 and removing the conductive member and the barrier film to the extent that the mask cloud is exposed on the top surface. The removal of the conductive member and the barrier film, for example, ϋ, 13 200952119 ^ Che^Cal^nical polish 〇, i; =; set = the blown electric member is exposed to the atmosphere 'the surface of the conductive member i is exposed to the atmosphere, It is preferable to carry out the above steps in the transition state, and to control the surface oxidation. [0051] Specifically, as shown in FIG. 10 and FIG. u, the environment in which the substrate is blown is in a vacuum state, and the processing space 20 ς which is continuously passed through the side money step can be occupied by the enthalpy, The vacuum space of both sides of the space 21 is processed. In this manner, the semiconductor member is exposed to the atmosphere by the conductive member. Figure 10 shows the device, which is processed by the input of any true level. 传送 传送 她 她 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 26 The general-purpose container is composed of 3 。. On the other hand, the state of the device of the change-part _ is shown in the early 11th. FIG. 11 shows the dry-feeding module 26, the arm 25, the GV23, the TMS blowing space 2〇, and the transfer film. Forming space = Fig. 11 shows that for the semiconductor device located in the middle of the manufacturing step, after the TMS blowing step is performed in the first coffee door 2, the board is controlled by the transfer module which can be controlled to a reduced pressure atmosphere, and the second space 21 is blocked. The barrier film is formed. The arrow in the figure represents the order in which the semiconductor device located in the middle of the step is moved. First, the semiconductor device is moved into the space 20, and after blowing, the barrier film is formed in the space 21. During this step, It is desirable to maintain the vacuum state and transport the substrate. Further, in another method, the conductive member can be kept in a vacuum state by being transported within the hour after the TMS blowing treatment device and the barrier film forming device. To prevent surface oxidation. Again, in Figure 1 In the cases 0 and 11, the device for making the inside of the device vacuum may be any one. [0052] ~ 14 200952119 The semiconductor manufacturing device of the present invention can be manufactured by the above steps. Further, the above steps can be repeated as needed. Multilayer wiring is formed. [0053] The results of the experiment on the use of trimethyl sulfhydrane (TMS) gas for oxidized copper wiring are described in detail with reference to Figures 12 to 17. Figures 12 to 14 show The result of XPS analysis of the reduced copper oxide is the sample. The measurement conditions of Nos. 1 to 8 shown in Figs. 12 to 14 are as shown in the following Table 1. [0054] [Table 1]

No. XPS analysis sample processing conditions 1 STG set temperature 300t:, H2 300sccnU200mTorr, 1800 seconds 7 STG set temperature 300 ° C, H2 300sccm, 2000mTorr, 300 seconds 2 & 3 STG set temperature 300 ° C, TMS lSOsccm ^ Ar 1 OOsccm^OOOmTorr, 1800 seconds 4 STG Set temperature 300 °C, TMS lSOsccm^Ar lOOsccm, 2000mTorr, 30C^, 5 STG Set temperature 300°C, TMS lSOsccir^Ar IOOsccii^ 2000mToiT, 600 seconds 6 STG Set temperature 300°C , TMS 180sccm, Ar lOOsccm, 2000mTorr, 1800 seconds 8 untreated 15 [0055] 200952119 22: 2 table table == 虱虱 仃 仃 仃 仃 仃 , , , , , , , , , 未 未 未 未 未 未 未 未 未Treatment condition 8, a copper watch was detected: Another aspect 'Figure 13 shows the results of sample processing conditions XPS (Si 2P) analysis under Nos. 4-8. The 5 side flanks located in the upper row of Figure 13 show the detection of the Si 2 P spectrum and the presence or absence of a possible adhesion to the copper surface. Thereafter, the - part of the four graphs is surrounded by a circle. To observe the data relating to this portion, the Si 2 P spectrum was not detected, and it was found that there was no surface due to TMS blowing on each sample surface. [0057] ', XPS (0 Is) is the same as described above. Figure 14 shows the sample processing conditions at Nos. 4, 7, and 8, the results of the analysis, and the results of XPS (Si2p) analysis. Results and Figs. 12 and 13 [0058] Next, Figs. 15 to 17 will be described. Figures 15 to 17 show the results of FT-IR analysis of the reduced copper oxide as a sample. The measurement conditions of Nos. 1 to 3 shown in Figs. 15 to 17 are as shown in Table 2 below. " [0059] [Table 2]

No. FT-IR analysis sample processing conditions 1 STG set temperature 300 ° C 1800 seconds 2 & 3 STG set temperature 300 ° C, TMS 180sccm, Ar 100sccm, 2000mTorr, 1800 seconds -------_____ Note) STG It means a substrate mounting table. [0060] 200952119 The spectrum is back to sputum, and the absorption spectrum after absorption after the fire is poor, and the copper oxide used for the reduction is restored by gas tempering. Etc., as long as the implementation of the hair: on the course of the scope of the scope of the invention / 丨" one by the implementation of the secret, (industrial use) φ ❹ [0062] line: damage; Original. 璧 璧 之 , , , , , , , 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化 氧化Fig. 12 shows the second έ έ ^ ^ 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体Figure 14 shows the results of XPS analysis using reduced copper oxide as a sample.Figure 15 shows the results of FT-IR analysis using reduced copper oxide as a sample. Figure 16 shows the reduced copper oxide as a sample. FT-IR analysis results Figure 17 shows the results of FT-IR analysis using reduced copper oxide as a sample. [Main component symbol description] 1 substrate 2 first interlayer insulating film 3 conductive member 4 etching barrier film 5 2 interlayer insulating film 6 Cover film 7 Through hole and wiring trench 8 Part of the surface of the conductive member 9 Barrier film 10 Conductive member 20 Air blowing space (space) (processing space) 21 Barrier film forming space (processing space) 22 Vacuum processing space

23 GV 25 Arm 26 Transfer Module 27 Vacuum Preparation Module 28 Load Module

29 Loading 埠 FOUP 30

Claims (1)

200952119 * VII. Patent application scope: 1. A semiconductor device with a semi-conducting material, a semiconductor device having a conductive member and an insulating layer on a ribbed substrate, characterized in that the method comprises the steps of: forming a conductive member over the substrate And forming an insulating layer on the conductive member; removing the insulating layer existing above the conductive member; and performing an organic decane gas and a hydrogen gas blowing in order to reduce the oxidized region existing on the conductive member. The method of manufacturing a semiconductor device according to the invention of claim 2, wherein the blowing step further comprises: applying the microwave to the organic phenoxane gas. The method of manufacturing a semiconductor device according to claim 1, wherein the blowing step is to raise the temperature of the substrate from 15 ° C to 350 ° C 2 and to perform organic decane gas and hydrogen blowing. gas. The method of manufacturing a semiconductor device according to the first aspect of the invention, wherein the blowing step is such that the temperature of the substrate is raised from 150 ° C to 300 t, and an organic decane gas and a hydrogen gas are blown. 5. The method of manufacturing a semiconductor device according to the first aspect of the invention, wherein the organic decane gas is a mercapto decane gas. 6. The method of manufacturing a semiconductor device according to the first aspect of the invention, wherein the organic decane gas is a trimethyl decane gas. The method of manufacturing a semiconductor device according to the first aspect of the invention, wherein the blowing step is performed by first blowing an organic decane gas and then performing hydrogen blowing. 8. The method of manufacturing a semiconductor device according to claim i, wherein the conductive member is made of a copper-containing material. 9. The method of manufacturing a semiconductor device according to the invention, wherein the insulating film is a fluorocarbon film or a siCN film. 10. A method of fabricating a semiconductor device for fabricating a semiconductor device having a plurality of insulating layers over a substrate, characterized by comprising the steps of: forming a conductive member in the plurality of insulating layers; removing a portion of the plurality of insulating layers; * When the conductive member is oxidized by removing a portion of the plurality of insulating layers, the manufacturing method of the removing step is performed by using an oxidized portion of the electric member to perform an organic pulverized gas and a nitrogen gas to be blown. , the steps of the barrier film. emulsification. After the reduction of the enthalpy, a resistance method is formed in the opening portion, wherein the resistance is =====(4), wherein, further, the manufacturing method of the semiconductor device, such as the == profit range, item 12, straight, 3 r After the barrier film is formed, the opening portion is formed with a plurality of other conductive members. The method for manufacturing a semiconductor device according to the first aspect, wherein the insulating layer is composed of two different insulating films. An interlayer insulating film filled with a conductive member is formed on the top of the soil, and a side insulating film is formed on the conductive member and the interlayer; ❹ removing the etching which is in contact with the conductive member a barrier film; and blowing an organic decane gas and hydrogen gas to the conductive member. 18. The semiconductor device of claim 17, wherein the manufacturing method further comprises the step of forming another interlayer insulating film on the side of the form. The semiconductor device of claim 18, wherein the method of fabricating the semiconductor device further comprises the step of forming an opening portion of the interlayer insulating film before removing the etching stopper film. The semiconductor device of claim 17, wherein the blowing step further comprises the step of applying microwaves to the organic decane gas and the hydrogen. The semiconductor device of claim 17, wherein the blowing step is $20 200952119 such that the temperature of the substrate is from 15 〇. (A) is a semiconductor device in which the organic decane gas is a trimethyl decane gas. A method of manufacturing a semiconductor device, characterized in that the step of forming a plurality of wiring layers on a substrate includes a step of blowing a contact portion of the wiring layers with each other using an organic decane gas and hydrogen gas. The method of manufacturing a semiconductor device according to claim 23, wherein the blowing step further comprises: applying microwaves to the organic decane gas and hydrogen. The method of manufacturing a semiconductor device according to claim 23, wherein the = blowing step increases the temperature of the substrate from 150 ° C to 350 ° C, and blows the organic halogen gas and the hydrogen gas. Eight, 〇 21