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TW200951231A - Silicon-metal alloy film, cover and electronic device containing silicon-metal alloy film, and producing method of forming a silicon-metal alloy film on a shell surface - Google Patents

Silicon-metal alloy film, cover and electronic device containing silicon-metal alloy film, and producing method of forming a silicon-metal alloy film on a shell surface Download PDF

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Publication number
TW200951231A
TW200951231A TW97122252A TW97122252A TW200951231A TW 200951231 A TW200951231 A TW 200951231A TW 97122252 A TW97122252 A TW 97122252A TW 97122252 A TW97122252 A TW 97122252A TW 200951231 A TW200951231 A TW 200951231A
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Taiwan
Prior art keywords
metal alloy
alloy film
electronic device
film
bismuth
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TW97122252A
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Chinese (zh)
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TWI388675B (en
Inventor
Huan-Gan Dong
Jun-Hao Qiu
rui-dong Zhang
yin-ting Hong
zhi-long Li
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China Steel Corp
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Priority to TW97122252A priority Critical patent/TWI388675B/en
Publication of TW200951231A publication Critical patent/TW200951231A/en
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Publication of TWI388675B publication Critical patent/TWI388675B/en

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Abstract

The present invention provides a silicon-metal alloy film, a cover and an electronic device containing silicon-metal alloy film, and a producing method of forming a silicon-metal alloy film on a shell surface, wherein the silicon content of the silicon-metal alloy film is form 62wt% to 85wt% and the remaining is a metal selected form the group consisting of aluminum, nickel, titanium, zinc, and a combination thereof. The present invention is able to form an electronic device containing silicon-metal alloy film by setting the silicon-metal alloy film on a cover, such as the shell surface of the electronic device. The silicon-metal alloy film of the present invention dose not attenuate of electromagnetic wave signals, and contains metal luster and texture to increase its value, and the advantages of not easy to change color, high yield, small color differences between batches, good weather resistance, strong adhesion, and long storage time of semi-finished product. Furthermore, the silicon-metal alloy film of the present invention is able to apply to high-yielded injection mold process directly and low-costs DC sputtering method to increase output and reduce costs respectively.

Description

200951231 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種鍛膜、具錄膜之外罩及電子裝置以 及形成鍍膜於一殼體表面之製造方法,詳言之,係關於一 種矽基金屬合金薄膜、具矽基金屬合金薄膜之外罩及電子 裝置以及形成矽基金屬合金薄膜於一殼體表面之製造方 法。 【先前技術】 為了增加產品之美觀及附加價值,會於產品之表面設置 裝飾链膜。以行動3C產品(例如:行動電話或個人數位 助理)為例,為達到降低生產成本及大量生產之目的,習 知行動3C產品大多採用塑膠作為製造外殼的材料,僅有高 階機種才會使用鎂合金等金屬材質。為了改善塑膠材質所 產生之廉價感,業者常於產品之外殼喷塗添加金屬顆粒或 珍珠之顏料,以增加產品之美感、科技感及現代感,藉以 提昇產品之品質及價值。 近年來,因無線通訊的廣泛應用,幾乎所有3C產品皆具 有紅外線(IR)、藍牙(Bluet00th)、無線網路(Wi_Fi)、無線 寬頻(Wi-Max)或全球定位系統(GPS)至少其中之一功能’ 然而,上述該等功能之高頻電磁波的傳遞易受金屬的阻 隔 叙而s,導電度良好的材質,例如:銅、鋁、銀等 金屬之薄膜,厚度只要數千A(i〇-1G公尺),就會完全阻隔 電磁波的傳輸及接收。因此,如何使塑膠材質之外殼具有 金屬光澤,且不影響無線訊號的傳輸及接收,成為具有無 131648.doc 200951231 線傳輸及接收功能產品進行裝飾鍍膜的議題。 圖1顯示習知產品殼件之局部示意圄。該習知產品殼件i 包括一塑膠基板11、一裝飾鍍膜12及一透明染料層13。該 裝飾鍍膜12係由銦或錫以蒸鍍製程在該塑膠基板丨丨上沉積 而成’其中該裝飾鍍膜12具有複數個不連續之島狀結構 121,故不具導電特性,因此不干擾無線傳輸訊號強度, ' 且可藉由該裝飾鍍臈12之該等島狀結構121之散射效果, ❿ 以反射外界光線的光澤而產生流動金屬般的光影。 該透明染料層13係以噴塗方法形成,該透明染料層13覆 蓋該裝飾鍍膜12及部分該塑膠基板u。該裝飾鍍膜12係為 了使s亥產品殼件1具有金屬反射效果,以增加產品價值。 但疋,該裝姊鍵膜12有分佈不均勻、易變色、生產良率 低、批次間色澤差異大、耐候性不佳、附著性差及不能應 用於高生產效率之模内射出製程等缺點。 因此,有必要提供一創新且富有進步性之矽基金屬合金 φ 薄膜、具矽基金屬合金薄膜之外罩及電子裝置以及形成矽 基金屬合金薄膜於一殼體表面之製造方法,以解決上述問 *- 題。 ·. 【發明内容】 本發明提供一種石夕基金屬合金薄膜,其中矽之含量為百 分之62至百分之85重量百分比,其餘重量百分比為金屬, 該金屬係選自鋁、鎳、鈦、鋅或其組合之群。 本發明另提供-種具石夕基金屬合金薄膜之外罩,其包 括.一殼體及一矽基金屬合金薄膜。該矽基金屬合金薄膜 131648.doc 200951231 設置於料體之-表面,其切之含量為百分⑽至百分 之85重莖百分比,並給番县 ^ 罝百刀比為金屬,該金屬係選自 銘、錄、鈦、鋅或其組合之群。200951231 IX. The invention relates to a forged film, a film cover and an electronic device, and a manufacturing method for forming a coating on a surface of a casing, in particular, a 矽A base metal alloy film, a ruthenium-based metal alloy film cover and an electronic device, and a method of forming a ruthenium-based metal alloy film on a surface of a casing. [Prior Art] In order to increase the aesthetics and added value of the product, a decorative chain film is provided on the surface of the product. For example, in the case of mobile 3C products (such as mobile phones or personal digital assistants), in order to reduce production costs and mass production, the conventional 3C products use plastic as the material for the outer casing, and only the high-end models use magnesium. Metal materials such as alloys. In order to improve the cheap feeling of plastic materials, the industry often sprays metal particles or pearl pigments on the outer shell of the product to increase the beauty, technology and modernity of the product, so as to enhance the quality and value of the product. In recent years, due to the wide application of wireless communication, almost all 3C products have at least one of infrared (IR), bluetooth (Bluet00th), wireless network (Wi_Fi), wireless broadband (Wi-Max) or global positioning system (GPS). A function' However, the transmission of high-frequency electromagnetic waves of the above functions is susceptible to metal barriers, and materials with good electrical conductivity, such as films of metals such as copper, aluminum, and silver, have a thickness of several thousand A (i〇 -1G meters), it will completely block the transmission and reception of electromagnetic waves. Therefore, how to make the plastic material shell have metallic luster, and does not affect the transmission and reception of wireless signals, and has become a topic of decorative coating for products with no transmission and reception functions of 131648.doc 200951231. Figure 1 shows a partial schematic representation of a conventional product housing. The conventional product shell member i includes a plastic substrate 11, a decorative coating film 12, and a transparent dye layer 13. The decorative coating 12 is deposited on the plastic substrate by an indium or tin deposition process. The decorative coating 12 has a plurality of discontinuous island structures 121, so it has no conductive properties and therefore does not interfere with wireless transmission. The signal intensity, 'and by the scattering effect of the island structures 121 of the decorative rhodium 12, 流动 reflects the luster of the external light to produce a flowing metal-like light and shadow. The transparent dye layer 13 is formed by a spraying method, and the transparent dye layer 13 covers the decorative plating film 12 and a part of the plastic substrate u. The decorative coating 12 is designed to impart a metallic reflection effect to the shai product shell member 1 to increase product value. However, the mounting key film 12 has disadvantages such as uneven distribution, easy discoloration, low production yield, large difference in color between batches, poor weather resistance, poor adhesion, and in-mold injection process which cannot be applied to high production efficiency. . Therefore, it is necessary to provide an innovative and progressive ruthenium-based metal alloy φ film, a ruthenium-based metal alloy film cover and an electronic device, and a method for forming a ruthenium-based metal alloy film on a surface of a casing to solve the above problem. *- question. The present invention provides a stone base metal alloy film in which the content of cerium is 62 to 85 percent by weight, and the remaining weight percentage is metal, and the metal is selected from the group consisting of aluminum, nickel, and titanium. a group of zinc, or a combination thereof. The present invention further provides a cover material for a Shiyake-based metal alloy film, which comprises a casing and a base metal alloy film. The bismuth-based metal alloy film 131648.doc 200951231 is disposed on the surface of the material, and the content thereof is a percentage of (10) to 85 percent of the stem, and is given to the metal of the county. A group selected from the group consisting of Ming, Lu, Titanium, Zinc or a combination thereof.

本發明另提供一種具矽基金屬合金薄臈之電子裝置立 包括:一殼體及一石夕基金屬合金薄膜。該石夕基金屬合金薄 膜設置於該殼體之m切之含量為百分之62至百 分之85重量百分比,其餘重量百分比為金屬,該金屬係選 自鋁、鎳、鈦、鋅或其組合之群。 本發明另提供-種形成矽基金屬合金薄膜於一殼體表面 之製造方法’該製造方法包括以下步驟:⑷提供—石夕基金 屬合金㈣’其中該金屬係選自銘、錄、&、鋅或其組合 之群;及(b)形成一矽基金屬合金薄膜於該殼體之表面,其 中該石夕基金屬合金薄膜切之含量為百分之62至百分之^ 重量百分比,其餘重量百分比為該金屬。 本發明之該石夕基金屬合金薄膜係為非晶質連續結構,且 該矽基金屬合金薄膜係為電性絕緣,故不會對任何電磁波 訊號產生衰減,因此可保持電磁波訊號有效地、良好地傳 輸及接收。並且,㈣基金屬合金薄膜具有非晶質連續結 構,使得產品之殼體表面更為平滑,更增加反射外界光線 的效果,以產生極佳之流動金屬般的光影,故可增加產品 價值。 另外,本發明係以濺鍍方法設置該矽基金屬合金薄膜於 產品之殼體表面,因此該矽基金屬合金薄膜具有分佈均 勻、不易變色、生產良率高、批次間色澤差異小、耐候性 131648.doc 200951231 佳、附著性強、半成品儲存時間長等之功效。 . 再者’本發明之該石夕基金屬合金薄膜可直接應用於棋内 射出製程’而模内射出製程具有較高之生產效率,故可增 加產量。此外,因該石夕基金屬合金靶材可為晶質結構,‘ , βρ ’财基金屬合金㈣可為電性導體,本發明可利用成 本較低之直流濺鍍方法,以製作該矽基金屬合金薄膜故 *' 可降低生產成本。 【實施方式】 ❹ 圖2Α顯示本發明矽基金屬合金薄膜之示意圖。在本實施 例中,該矽基金屬合金薄膜2係利用一矽基金屬合金靶材 (圖未示出),以減鍵方法製得。其中,根據不同應用,該 濺鍍方法可選擇使用直流(DC)濺鍍、直流加脈衝(DC and pulse)濺鍍或射頻(rf)濺鍍》 在本實施例中’該矽基金屬合金薄膜2之矽含量為百分 之62至百分之85重量百分比,其餘重量百分比為金屬。其 ❿ 中’該金屬係選自銘、錄、欽、鋅或其組合之群,較佳 地’該矽基金屬合金係為矽鋁合金。該矽基金屬合金薄膜 ·- 2之厚度較佳為200至600奈米,在本實施例中,該石夕基金 屬合金薄膜2之厚度為500奈米’該碎基金屬合金薄膜2之 電阻值大於100M歐姆(Ω)。其中,該矽基金屬合金薄膜2 具有極薄之厚度且為電性絕緣,且為均勻之非晶質連續结 構。因此,該石夕基金屬合金薄膜2不會對任何電磁波訊號 產生衣減,故可保持電磁波訊號有效地、良好地傳輸及接 收’亦即,該石夕基金屬合金薄膜2可應用至低電磁波屏蔽 131648.doc 200951231 • (Low Electro Magnetic Shielding,LEMS)之技術領域。 此外,以濺鍍方法製得之該矽基金屬合金薄膜2具有分 佈均勻、外觀色澤更高、不易變色、在可見光範圍内反射 率可達5〇%以上以及承受製程溫度最高可達58〇〇c之功 效。 其中,本發明可另形成至少一圖樣2〇1 (例如:文字或圖 形)於該石夕基金屬合金薄膜2之一表面(如圖2B所示),並 ® 且’可再形成一彩色透光層(圖未示出),以覆蓋該矽基金 屬合金薄膜2及該圖樣201。在其他應用中,亦可另包括一 基礎薄膜202 ’該圖樣201設置於該矽基金屬合金薄膜2及 該基礎薄膜202之間,如圖2C所示。較佳地,該基礎薄膜 202係為尚分子薄膜。 圖3顯示本發明形成矽基金屬合金薄膜於一殼體表面之 第一實施例之製造方法流程圖,其中,該矽基金屬合金薄 膜與上述圖2A之結構大致相同,故以下茲以圖2A之矽基 ❿ 金屬合金薄膜2之元件符號加以說明。配合參考圖2 A及圖 3’首先參考步驟S31,提供一石夕基金屬合金乾材,其中該 、 金屬係選自鋁、鎳、鈦、辞或其組合之群,在本實施例 中’該矽基金屬合金靶材係為晶質結構,且該矽基金屬合 金係為矽鋁合金。參考步驟S32,形成一矽基金屬合金薄 膜2於一殼體之表面。 在本實施例中’係利用濺鍍方法形成該矽基金屬合金薄 膜2於該殼體之表面。該濺鍍方法可選擇使用直流濺鍍、 直流加脈衝濺鍍或射頻濺鍍。其中,直流濺鍍方法成本較 131648.doc -10- 200951231 低,且該石夕基金屬合金乾材係為晶質結構,故本發明實施 例之錢嫂方法較佳地係選擇使用直流滅鍵,以降低生產 成本。 圖4顯示本發明形成矽基金屬合金薄膜於一殼體表面之 帛二實施例之製造方法流程圖,其中,該矽基金屬合金薄 膜與上述圖2B之結構大致相同,故以下茲以圖2B之矽基 . 纟屬合金薄膜2之元件符號加以說明。配合參考圖2B及圖 ❿ 4 ’首先參考步驟S4卜提供-矽基金屬合金靶材,其中該 金屬係選自銘、鎳、鈦、鋅或其組合之群,且該石夕基金屬 合金靶材係為晶質結構。 參考步驟S42,形成該矽基金屬合金薄膜2於一殼體之表 面。其中,該第二實施例之製造方法與上述該第一實施例 之製造方法不同之處在於,在該第二實施例中,在步驟 S42之後可另包括一步驟S43,形成至少一圖樣2〇1於該矽 基金屬合金薄膜2之表面,其中,該圖樣2〇1可以喷塗方法 φ 形成於該矽基金屬合金薄膜2之表面。 在本實施例中,在形成該圖樣201於該矽基金屬合金薄 膜2之表面之後’可另包括一步驟s 44,形成一彩色透光 層,以覆蓋該矽基金屬合金薄膜2及該圖樣201。 圖5 A顯示本發明形成矽基金屬合金薄臈於一殼體表面之 第三實施例之製造方法流程圖,其中,該矽基金屬合金薄 膜與上述圖2C之結構大致相同,故以下茲以圖2C:之矽基 金屬合金薄膜2之元件符號加以說明。配合參考圖2C及圖 5,首先參考步驟S51,提供一矽基金屬合金乾材,其中該 131648.doc •11 · 200951231 金屬係選自鋁、鎳、鈦、鋅或其組合之群,且該矽基金屬 合金靶材係為晶質結構。 參考步驟S52,形成一矽基金屬合金薄膜於一殼體之表 面’該石夕基金屬合金薄膜2係為非晶質連續結構。其中, 在該第三實施例中,步驟S52係包括以下步驟。 首先,參考步驟S521,提供一基礎薄膜202,較佳地, 該基礎薄膜202係為塑膠薄膜。參考步驟S522,形成至少 ❹ 一圖樣201於該基礎薄膜202之一表面。參考步驟3523,濺 鑛該矽基金屬合金薄膜2於該基礎薄膜2〇2之該表面,且覆 蓋該圖樣201及該基礎薄膜202,以形成一轉印基材。 配合參考圖5B及步驟S524,設置該轉印基材於一成型模 具203中,該成型模具之内部形狀係配合該殼體之形狀, 該基礎薄膜202之另一表面接觸該成型模具2〇3之内面。參 考步驟S525,以射出成型方法設置製造該殼體之材料於該 成型模具203中,使該殼體結合該矽基金屬合金薄膜2。 φ 配合參考圖5B及步驟S526,移除該成型模具203及該基 礎薄膜202。其中’該殼體與該矽基金屬合金薄膜2間之結 ·- 合力大於該基礎薄膜202與該矽基金屬合金薄膜2間之結合 力’故射出成型該殼體後,可移除該成型模具203及該基 礎薄膜202。較佳地’在步驟8526之後,可另包括一形成 一彩色透光層之步驟S53,以覆蓋該矽基金屬合金薄膜2及 該圖樣201。 圖6顯示本發明具矽基金屬合金薄膜之外罩之剖面示意 圖。該具矽基金屬合金薄膜之外罩3包括:一殼體4及一矽 131648.doc •12- 200951231 基金屬合金薄臈2。其中,該梦基金屬合金薄臈2與上述圖 2B之結構大致相同,故以下茲以圖2b之矽基金屬合金薄 膜2之元件符號加以說明。配合參考圖2B及圖6,在本實施 例中,該矽基金屬合金薄膜2設置於該殼體4之一表面。並 且’至少一圖樣201設置於該矽基金屬合金薄膜2之表面, 以及’ 一彩色透光層204更覆蓋該矽基金屬合金薄膜2及該 圖樣201。 圖7顯示本發明具矽基金屬合金薄膜之電子裝置之示意 圖。配合參考圖6及圖7,該具矽基金屬合金薄膜之電子裝 置5包括:一殼體4及一矽基金屬合金薄膜2。其中,該殼 體4及該矽基金屬合金薄膜2與上述圖6之外罩3結構大致相 同,故兹以圖6之外罩3之元件符號加以說明。在本實施例 中,該殼體4係為非金屬基材,例如:塑膠材質。其中, 該殼體4係可利用射出成型方法或模具成型方法製造。 在不同領域中之應用中 ’該電子裝置5可為行動通訊裝The present invention further provides an electronic device having a bismuth-based metal alloy thin raft comprising: a casing and a stellite metal alloy film. The Schottky metal alloy film is disposed in the shell at a m-cut content of 62% to 85 percent by weight, and the remaining weight percentage is metal, and the metal is selected from the group consisting of aluminum, nickel, titanium, zinc or Group of combinations. The present invention further provides a method for producing a bismuth-based metal alloy film on a surface of a casing. The manufacturing method comprises the following steps: (4) providing - a stone base metal alloy (4), wherein the metal is selected from the group consisting of: Ming, Lu, & And a group of zinc or a combination thereof; and (b) forming a ruthenium-based metal alloy film on the surface of the shell, wherein the shigang metal alloy film is cut to a content of 62 to 6% by weight, The remaining weight percentage is the metal. The base metal alloy film of the present invention is an amorphous continuous structure, and the germanium-based metal alloy film is electrically insulated, so that it does not attenuate any electromagnetic wave signal, thereby keeping the electromagnetic wave signal effective and good. Ground transmission and reception. Moreover, the (4) base metal alloy film has an amorphous continuous structure, so that the surface of the product shell is smoother, and the effect of reflecting external light is increased, so as to produce an excellent flow metal like light and shadow, thereby increasing the product value. In addition, the present invention provides the bismuth-based metal alloy film on the surface of the shell of the product by a sputtering method, so that the bismuth-based metal alloy film has uniform distribution, is not easy to change color, has high production yield, small difference in color between batches, and is resistant to weathering. Sex 131648.doc 200951231 Good, strong adhesion, long storage time of semi-finished products, etc. Further, the stone-based metal alloy film of the present invention can be directly applied to the in-game ejection process, and the in-mold injection process has high production efficiency, so that the yield can be increased. In addition, since the Shishiji metal alloy target may have a crystalline structure, the 'βρ'-based metal alloy (4) may be an electrical conductor, and the present invention can utilize a lower cost DC sputtering method to fabricate the ruthenium base. Metal alloy film* can reduce production costs. [Embodiment] Fig. 2A is a schematic view showing a ruthenium-based metal alloy film of the present invention. In the present embodiment, the bismuth-based metal alloy film 2 is produced by a reduction-bonding method using a bismuth-based metal alloy target (not shown). Wherein, according to different applications, the sputtering method may select DC (DC) sputtering, DC and pulse sputtering or radio frequency (rf) sputtering. In the present embodiment, the bismuth-based metal alloy film The content of ruthenium is from 62 to 85 percent by weight, and the remaining weight percentage is metal. The metal in the crucible is selected from the group consisting of Ming, Lu, Qin, Zinc or a combination thereof, and preferably the niobium-based metal alloy is a niobium aluminum alloy. The thickness of the bismuth-based metal alloy film ~ 2 is preferably 200 to 600 nm. In the present embodiment, the thickness of the stellite metal alloy film 2 is 500 nm. The resistance of the base metal alloy film 2 The value is greater than 100M ohms (Ω). Among them, the bismuth-based metal alloy thin film 2 has an extremely thin thickness and is electrically insulating, and is a uniform amorphous continuous structure. Therefore, the Shishiji metal alloy film 2 does not cause any reduction in the electromagnetic wave signal, so that the electromagnetic wave signal can be effectively and efficiently transmitted and received. That is, the Shishiji metal alloy film 2 can be applied to low electromagnetic waves. Shield 131648.doc 200951231 • (Low Electro Magnetic Shielding, LEMS) technical field. In addition, the bismuth-based metal alloy film 2 obtained by the sputtering method has a uniform distribution, a higher appearance color, is less prone to discoloration, a reflectance of more than 5% in the visible range, and a process temperature of up to 58 〇〇. The effect of c. Wherein, the present invention may further form at least one pattern 2〇1 (for example, text or graphics) on one surface of the Shiyake-based metal alloy film 2 (as shown in FIG. 2B), and 'can be further formed into a color transparent A light layer (not shown) is provided to cover the base metal alloy film 2 and the pattern 201. In other applications, a base film 202' may be further included. The pattern 201 is disposed between the base metal alloy film 2 and the base film 202, as shown in Fig. 2C. Preferably, the base film 202 is a molecular film. 3 is a flow chart showing the manufacturing method of the first embodiment of the present invention for forming a bismuth-based metal alloy film on a surface of a casing, wherein the bismuth-based metal alloy film is substantially the same as the structure of FIG. 2A, so that FIG. 2A The element symbol of the metal alloy film 2 will be described. Referring to FIG. 2A and FIG. 3', first referring to step S31, a dry material of a stone base metal alloy is provided, wherein the metal is selected from the group consisting of aluminum, nickel, titanium, rhenium or a combination thereof, in the present embodiment The bismuth based metal alloy target is a crystalline structure, and the bismuth based metal alloy is a bismuth aluminum alloy. Referring to step S32, a bismuth based metal alloy film 2 is formed on the surface of a casing. In the present embodiment, the base metal alloy film 2 is formed on the surface of the casing by a sputtering method. The sputtering method can be selected from DC sputtering, DC plus pulse sputtering or RF sputtering. The cost of the DC sputtering method is lower than that of the 131648.doc -10-200951231, and the dry material of the Shishiji metal alloy is a crystalline structure. Therefore, the Qiang method of the embodiment of the present invention preferably uses the DC kill key. To reduce production costs. 4 is a flow chart showing a manufacturing method of the second embodiment of the present invention for forming a bismuth-based metal alloy film on a surface of a casing, wherein the bismuth-based metal alloy film is substantially the same as the structure of FIG. 2B, so that FIG. 2B The base of the bismuth alloy film 2 is described. Referring to FIG. 2B and FIG. 4 ' firstly, referring to step S4, a bismuth-based metal alloy target is provided, wherein the metal is selected from the group consisting of Ming, nickel, titanium, zinc or a combination thereof, and the base metal alloy target The material is a crystalline structure. Referring to step S42, the base metal alloy film 2 is formed on the surface of a casing. The manufacturing method of the second embodiment is different from the manufacturing method of the first embodiment described above. In the second embodiment, after step S42, a step S43 may be further included to form at least one pattern. 1 on the surface of the base metal alloy film 2, wherein the pattern 2〇1 can be formed on the surface of the base metal alloy film 2 by a spraying method φ. In this embodiment, after the pattern 201 is formed on the surface of the bismuth metal alloy film 2, a step s 44 may be further included to form a color light transmissive layer to cover the bismuth metal alloy film 2 and the pattern. 201. 5A is a flow chart showing a manufacturing method of a third embodiment of the present invention for forming a bismuth-based metal alloy thinner on a surface of a casing, wherein the bismuth-based metal alloy film is substantially the same as the structure of FIG. 2C described above, Fig. 2C is a view showing the components of the bismuth based metal alloy thin film 2. Referring to FIG. 2C and FIG. 5, first referring to step S51, a dry metal-based alloy dry material is provided, wherein the 131648.doc •11 · 200951231 metal is selected from the group consisting of aluminum, nickel, titanium, zinc or a combination thereof, and The bismuth based metal alloy target is a crystalline structure. Referring to step S52, a germanium-based metal alloy film is formed on the surface of a casing. The stone base metal alloy film 2 is an amorphous continuous structure. In the third embodiment, step S52 includes the following steps. First, referring to step S521, a base film 202 is provided. Preferably, the base film 202 is a plastic film. Referring to step S522, at least one pattern 201 is formed on one surface of the base film 202. Referring to step 3523, the base metal alloy film 2 is sputtered on the surface of the base film 2〇2, and the pattern 201 and the base film 202 are covered to form a transfer substrate. Referring to FIG. 5B and step S524, the transfer substrate is disposed in a molding die 203. The internal shape of the molding die matches the shape of the casing, and the other surface of the base film 202 contacts the molding die 2〇3. Inside. Referring to step S525, the material for manufacturing the casing is set in the molding die 203 by an injection molding method, and the casing is bonded to the base metal alloy film 2. The molding die 203 and the base film 202 are removed by referring to Fig. 5B and step S526. Wherein, the junction between the shell and the base metal alloy film 2 is greater than the bond between the base film 202 and the base metal alloy film 2, so that the mold can be removed after injection molding the shell. The mold 203 and the base film 202. Preferably, after step 8526, a step S53 of forming a color light transmitting layer may be further included to cover the germanium-based metal alloy film 2 and the pattern 201. Fig. 6 is a schematic cross-sectional view showing the outer cover of the bismuth-based metal alloy film of the present invention. The bismuth-based metal alloy film outer cover 3 comprises: a casing 4 and a 矽131648.doc • 12-200951231 base metal alloy thin 臈2. Here, the dream-based metal alloy thin crucible 2 is substantially the same as the above-described structure of Fig. 2B, and therefore, the element symbols of the niobium-based metal alloy thin film 2 of Fig. 2b will be described below. Referring to Fig. 2B and Fig. 6, in the present embodiment, the base metal alloy film 2 is provided on one surface of the casing 4. And at least one pattern 201 is disposed on the surface of the base metal alloy film 2, and a color light transmitting layer 204 covers the base metal alloy film 2 and the pattern 201. Fig. 7 is a view showing the electronic device of the present invention having a ruthenium-based metal alloy film. Referring to Figures 6 and 7, the electronic device 5 having a bismuth-based metal alloy film includes a casing 4 and a bismuth-based metal alloy film 2. Here, the casing 4 and the base metal alloy film 2 have substantially the same structure as the outer cover 3 of Fig. 6, and therefore, the components of the outer cover 3 of Fig. 6 will be described. In this embodiment, the housing 4 is a non-metallic substrate, such as a plastic material. Among them, the casing 4 can be manufactured by an injection molding method or a mold forming method. In applications in different fields, the electronic device 5 can be a mobile communication device.

131648.doc 馨 •13· 200951231 裝置。 其中㈣疋對於上述具有接收電磁波之電子裝置由 於,該石夕基金屬合金薄琪2係為非晶質連續結構,且該石夕 基金屬合金薄膜2係為電性絕緣故不會對任何電磁波訊 號(例如:行動通訊裝置之高頻電磁波訊號)產生衰減,因 此可保持電磁波訊號有效地、良好地傳輸及接收。 要注意的是,該矽基金屬合金薄膜2可於形成該殼體4 φ 後,再狄置於该殼體4之該表面(如本發明設置矽基金屬合 金薄膜2於一殼體表面之第一實施例之製造方法);或者, 該矽基金屬合金薄膜2亦可先於一基礎薄膜之一表面,以 形成一轉印基材,接著設置該轉印基材於一成型模具中, 使該基礎薄膜之另一表面接觸該成型模具之内面,再以射 出成型方法將製造該殼體4之材料設置於該成型模具中, 最後移除該成型模具及該基礎薄膜,以使該矽基金屬合金 薄膜2覆蓋於該殼體4之表面(如本發明設置矽基金屬合金 參 薄膜2於一殼體表面之第三實施例之製造方法)。 較佳地,在該矽基金屬合金薄膜2設置於該殼體4表面之 ' 後,可依不同之產品需求形成一彩色透光層,以覆蓋該矽 '· 基金屬合金薄膜2;或先設置至少一圖樣於該矽基金屬合 金薄膜2之表面,再形成一彩色透光層’以覆蓋該矽基金 屬合金薄膜2及該圖樣。上述該彩色透光層及該圖樣之形 成方法,已於本發明設置矽基金屬合金薄膜2於一殼體表 面之第二實施例及第三實施例之製造方法中詳述,在此不 再加以贅述。 131648.doc -14· 200951231 本實施例中’至少-圖樣2G1設置於該石夕基金屬合金薄 膜2之表面,並且,—彩色透光層2〇4更覆蓋該#基金屬合 金薄膜2及該圖樣2〇1。 另外,關於材料之導電特性’因自由電子在材料中運動 . 其速度受到材料的晶格缺陷、孔洞、差排、不純物, . 卩及晶格原子振動的影響,故降低自由電子遷移速度,此 即電阻產生的原因。因此根據電子在材料中的移動速度, φ 即可計算材料的電阻或導電率。131648.doc Xin •13· 200951231 Installation. Wherein (4) 疋 for the above-mentioned electronic device having receiving electromagnetic waves, since the ishixiji metal alloy thin qi 2 is an amorphous continuous structure, and the ishi kyo metal alloy film 2 is electrically insulated, no electromagnetic wave is applied thereto. The signal (for example, the high-frequency electromagnetic wave signal of the mobile communication device) is attenuated, so that the electromagnetic wave signal can be effectively and well transmitted and received. It is to be noted that the bismuth-based metal alloy film 2 can be placed on the surface of the casing 4 after forming the casing 4 φ (as in the present invention, the bismuth-based metal alloy film 2 is disposed on a surface of the casing. The manufacturing method of the first embodiment); or, the bismuth-based metal alloy film 2 may be preceded by a surface of a base film to form a transfer substrate, and then the transfer substrate is disposed in a molding die, The other surface of the base film is brought into contact with the inner surface of the molding die, and the material for manufacturing the casing 4 is placed in the molding die by an injection molding method, and finally the molding die and the base film are removed to make the crucible The base metal alloy film 2 covers the surface of the casing 4 (as in the third embodiment of the present invention in which the base metal alloy alloy film 2 is provided on a surface of a casing). Preferably, after the bismuth-based metal alloy film 2 is disposed on the surface of the casing 4, a color light-transmitting layer may be formed according to different product requirements to cover the 矽'·-based metal alloy film 2; or At least one pattern is provided on the surface of the base metal alloy film 2, and a color light transmitting layer ' is formed to cover the base metal alloy film 2 and the pattern. The above-mentioned color light-transmitting layer and the method for forming the same are described in detail in the second embodiment and the manufacturing method of the third embodiment in which the bismuth-based metal alloy film 2 is provided on the surface of a casing of the present invention, and no longer Repeat them. 131648.doc -14· 200951231 In the present embodiment, 'at least the pattern 2G1 is disposed on the surface of the base metal alloy film 2, and the color light-transmitting layer 2〇4 further covers the #-base metal alloy film 2 and the The pattern is 2〇1. In addition, regarding the conductive properties of materials, 'the movement of free electrons in the material. The speed is affected by the lattice defects, holes, poor rows, impurities, and the vibration of the lattice atoms, so the free electron migration speed is reduced. That is, the cause of the resistance. Therefore, according to the moving speed of electrons in the material, φ can calculate the electrical resistance or electrical conductivity of the material.

Matthlessen及Nordheim規則係假設添加之合金元素為任 意分布的不純物,使得週邊的晶格扭曲,並造成電子接近 此區域時電位的改變,導致電子的散射。若合金原子非任 意分布,而是分別佔據特定的晶格位置,合金結構可視為 純的化合物(如晶質結構),電阻值將低於組成相同而原子 任意排列的合金(如非晶質結構)。本發明實施例之該矽基 金屬合金靶材為晶質結構,其具有較低之電阻值,故為電 ©'性導體。本發明實施例之該矽基金屬合金薄膜2為非晶質 結構,其具有較咼之電阻值,故為電性絕緣。因此,在上 述本發明之該等實施例中,係使用晶質結構之矽基金屬合 金靶材,因該矽基金屬合金靶材為電性導體,故可選擇使 用成本較低直流濺鍍方法,以形成該矽基金屬合金薄膜。 圖8顯示習知裝飾鍍膜及本發明之矽基金屬合金薄膜於 不同波長之光源下之反射率示意圖。其中,曲線Ll顯示習 知裝佛鑛膜於不同波長之光源下之反射率變化;曲線以顯 示本發明矽基金屬合金薄膜2於不同波長之光源下之反射 131648.doc -15· 200951231 率變化。經由曲線L1及曲線L2之比較顯示,該習知裝饰鑛 膜之反射率係為20〇/〇至40% ,而本發明之該石夕基金屬合金 薄膜2於波長之光源下之反射率皆大於5〇%(反射率為5〇% 至65%)。因此,本發明之該矽基金屬合金薄膜2確實具有 極佳之光源反射效果,亦即具有較佳之金屬質感。 本發明之該矽基金屬合金薄膜係為非晶質連續結構,且 該矽基金屬合金薄膜係為電性絕緣,故不會對任何電磁波 φ m號產生衰減’因此可保持電磁波訊號有效地、良好地傳 輸及接收。並且,該矽基金屬合金薄膜具有非晶質連續結 構,使得產品(例如··電子裝置)之殼體表面更為平滑,更 增加反射外界光線的效果,以產生極佳之流動金屬般的光 影,故可增加產品價值。 另外,本發明係以濺鍍方法設置該矽基金屬合金薄膜於 產品之殼體表面,因此該矽基金屬合金薄膜具有分佈均 勻、不易變色、生產良率高、批次間色澤差異小、耐候性 φ 佳、附著性強、半成品儲存時間長等之功效。 再者,本發明之該矽基金屬合金薄膜可直接應用於模内 - 射出製程,而模内射出製程具有較高之生產效率,故可增 、 加產量。此外,因該矽基金屬合金靶材可為晶質結構,亦 即,該矽基金屬合金靶材可為電性導體,本發明可利用成 本較低之直流濺鍍方法,以製作該矽基金屬合金薄膜,故 可降低生產成本。 上述實施例僅為說明本發明之原理及其功效,並非限制 本發明。因此習於此技術之人士對上述實施例進行修改及 131648.doc • 16 - 200951231 變化仍不脫本發明之精神。本發明之權利範圍應如後述之 申請專利範圍所列。 【圖式簡單說明】 圖1顯示習知產品殼件之局部示意圖; 圖2Α至2C顯示本發明矽基金屬合金薄膜之三種態樣之 示意圖; 圖3顯示本發明形成矽基金屬合金薄膜於一殼體表面之 第一實施例之製造方法流程圖; 圖4顯示本發明形成矽基金屬合金薄膜於一殼體表面之 第二實施例之製造方法流程圖; 圖5Α顯示本發明形成矽基金屬合金薄膜於一殼體表面之 第三實施例之製造方法流程圖; 圖5Β顯示本發明設置一轉印基材於一成型模具中之杀意 r£| . 圃, 圖6顯示本發明具矽基金屬合金薄膜之外罩之剖面系意 圖; 圖7顯示本發明具矽基金屬合金薄膜之電子裝置之糸意 圖;及 圖8顯示習知裝飾鍍膜及本發明之矽基金屬合金薄膳於 不同波長之光源下之反射率示意圖。 【主要元件符號說明】 1 習知產品殼件 2 本發明之矽基金屬合金薄膜 3 本發明具碎基金屬合金薄膜之外罩 131648.doc 200951231 4 殼體 5 本發明之具矽基金屬合金薄膜之電子裝置 11 塑膠基板 12 裝飾鍍膜 13 透明染料層 121 島狀結構 ' 201 圖樣 202 基礎薄膜 A w 203 成型模具 204 彩色透光層 131648.doc -18-The Matthlessen and Nordheim rules assume that the added alloying elements are arbitrarily distributed impurities, causing the surrounding lattice to distort and causing a change in potential when electrons approach this region, resulting in scattering of electrons. If the alloy atoms are not randomly distributed, but occupy a specific lattice position, respectively, the alloy structure can be regarded as a pure compound (such as a crystalline structure), and the resistance value will be lower than the alloy with the same composition and arbitrary arrangement of atoms (such as an amorphous structure). ). The bismuth-based metal alloy target of the embodiment of the present invention is a crystalline structure having a low electrical resistance value, so it is an electric '-conductor. The bismuth-based metal alloy film 2 of the embodiment of the present invention has an amorphous structure and has a relatively low electrical resistance value, so it is electrically insulated. Therefore, in the above embodiments of the present invention, a bismuth-based metal alloy target having a crystalline structure is used, and since the bismuth-based metal alloy target is an electrical conductor, a lower cost DC sputtering method can be selected. To form the bismuth based metal alloy film. Fig. 8 is a view showing the reflectance of a conventional decorative coating film and a bismuth-based metal alloy film of the present invention under light sources of different wavelengths. Wherein, the curve L1 shows the reflectance change of the conventional coated ore film under different wavelengths of light source; the curve shows the change of the bismuth-based metal alloy film 2 of the present invention under different wavelengths of light source 131648.doc -15· 200951231 rate change . The comparison between the curve L1 and the curve L2 shows that the reflectance of the conventional decorative mineral film is 20 〇 / 〇 to 40%, and the reflectance of the ishi kyo metal alloy film 2 of the present invention under a light source of wavelength Both are greater than 5〇% (reflectivity is 5〇% to 65%). Therefore, the bismuth-based metal alloy film 2 of the present invention does have an excellent light source reflection effect, i.e., has a better metallic texture. The bismuth-based metal alloy film of the present invention is an amorphous continuous structure, and the bismuth-based metal alloy film is electrically insulated, so that it does not attenuate any electromagnetic wave φ m number, so that the electromagnetic wave signal can be effectively maintained, Good transmission and reception. Moreover, the bismuth-based metal alloy film has an amorphous continuous structure, so that the surface of the shell of the product (for example, an electronic device) is smoother, and the effect of reflecting external light is further increased to produce an excellent flowing metal-like light and shadow. Therefore, it can increase the value of the product. In addition, the present invention provides the bismuth-based metal alloy film on the surface of the shell of the product by a sputtering method, so that the bismuth-based metal alloy film has uniform distribution, is not easy to change color, has high production yield, small difference in color between batches, and is resistant to weathering. Good φ, strong adhesion, long storage time of semi-finished products, etc. Furthermore, the bismuth-based metal alloy film of the present invention can be directly applied to the in-mold-injection process, and the in-mold injection process has a high production efficiency, so that the yield can be increased and increased. In addition, since the bismuth-based metal alloy target may be a crystalline structure, that is, the bismuth-based metal alloy target may be an electrical conductor, the present invention can utilize a lower cost DC sputtering method to fabricate the ruthenium base. Metal alloy film can reduce production costs. The above embodiments are merely illustrative of the principles and effects of the invention and are not intended to limit the invention. Therefore, those skilled in the art have made modifications to the above-described embodiments and the changes of the present invention are still in the spirit of the present invention. The scope of the invention should be as set forth in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a partial schematic view showing a conventional product shell member; FIGS. 2A to 2C are views showing three aspects of the bismuth-based metal alloy film of the present invention; and FIG. 3 is a view showing the formation of a bismuth-based metal alloy film according to the present invention. FIG. 4 is a flow chart showing a manufacturing method of a second embodiment of the present invention for forming a bismuth-based metal alloy film on a surface of a casing; FIG. 5A shows a bismuth-based metal formed by the present invention. A flow chart of a manufacturing method of a third embodiment of an alloy film on a surface of a casing; FIG. 5A shows the intention of the present invention to provide a transfer substrate in a molding die. FIG. 6 shows the present invention. The cross section of the base metal alloy film cover is intended; FIG. 7 shows the intention of the electronic device with the base metal alloy film of the present invention; and FIG. 8 shows the conventional decorative film and the base metal alloy thin film of the present invention at different wavelengths. Schematic diagram of the reflectance under the light source. [Explanation of main component symbols] 1 Conventional product case 2 The base metal alloy film 3 of the present invention The shredded base metal alloy film cover of the present invention 131648.doc 200951231 4 Housing 5 The base metal alloy film of the present invention Electronic device 11 plastic substrate 12 decorative coating 13 transparent dye layer 121 island structure ' 201 pattern 202 base film A w 203 molding die 204 color light transparent layer 131648.doc -18-

Claims (1)

200951231 十、申請專利範圍: 1· 一種矽基金屬合金薄膜,其中矽之含量為百分之62至百 分之85重量百分比,其餘重量百分比為金屬,該金屬係 選自鋁、鎳、鈦、鋅或其組合之群。 2·如請求項1之石夕基金屬合金薄膜,其中該石夕基金屬合金 * 薄膜之厚度為200至600奈米。 ' 3.如請求項1之石夕基金屬合金薄膜’其中該矽基金屬合金 薄膜之電阻值大於100M歐姆。 書 4.如請求項1之矽基金屬合金薄骐,其中該矽基金屬合金 係為矽鋁合金。 5. 如請求項1之矽基金屬合金薄臈,其中該矽基金屬合金 薄膜係為電性絕緣。 6. 如請求項1之矽基金屬合金薄膜,其中該矽基金屬合金 薄臈係為非晶質連續結構。 7. 如請求項1之矽基金屬合金薄膜,另包括至少一圖樣, 參 設置於該矽基金屬合金薄膜之一表面。 8·如請求項7之矽基金屬合金薄膜,另包括一基礎薄臈, ,. 該圖樣設置於該矽基金屬合金薄膜及該基礎薄膜之間。 • 9.如請求項8之碎基金屬合金薄膜,其中該基礎薄膜係為 高分子薄膜。 10. —種具矽基金屬合金薄膜之外罩,包括: 一殼體;及 —矽基金屬合金薄膜,設置於該殼體之一表面,其中 矽之含量為百分之62至百分之85重量百分比其餘重量 131648.doc 200951231 百分比為金屬,該金屬係選自鋁、鎳、鈦、鋅或其組合 之群。 ° 11.如請求項10之外罩,其中該矽基金屬合金係為矽鋁合 金〇 丨2·如請求項10之外罩,其中該矽基金屬合金薄膜係為電性 絕緣。 - 13.如請求項10之外罩,其中該矽基金屬合金薄膜係為非晶 _ 質連續結構。 14. 如請求項1〇之外罩,另包括至少一圖樣,設置於該矽基 金屬合金薄膜之一表面。 15. 如請求項14之外罩,另包括一彩色透光層,覆蓋該圖樣 及該矽基金屬合金薄膜。 16. —種具矽基金屬合金薄膜之電子裝置,包括: 一殼體;及 一石夕基金屬合金薄膜,設置於該殼體之一表面,其中 φ 矽之含量為百分之62至百分之85重量百分比,其餘重量 百分比為金屬,該金屬係選自鋁、鎳、鈦、鋅或其組合 ·· 之群。 I7·如請求項16之電子裝置,其中該殼體係為非金屬基材。 18. 如請求項17之電子裝置,其中該非金屬基材係為塑膠材 質。 19. 如請求項16之電子裝置,其中該矽基金屬合金薄膜之厚 度為200至600奈米。 20. 如請求項16之電子裝置,其中該矽基金屬合金薄膜之電 131648.doc 200951231 阻值大於100M歐姆。 21. 如請求項16之電子裝置,其中該矽基金屬合金係為矽鋁 合金。 22. 如請求項16之電子裝置,其中該矽基金屬合金薄膜係為 電性絕緣》 23·如請求項16之電子裝置,其中該殼體係利用射出成型方 " 法製造。 ❹ 24_如請求項16之電子装置,另包括至少一圖樣,設置於該 矽基金屬合金薄膜之一表面。 25. 如請求項16之電子裝置,其中該電子裝置係為行動通訊 裝置。 26. 如請求項25之電子裝置,其中該行動通訊裝置係為行動 電話或個人數位助理(PDA)。 27. 如請求項16之電子裝置,其中該電子裝置係為影像顯示 裝置。 ❿ 28.如請求項27之電子裝置,其中該影像顯示裝置係為陰極 射線管顯示器、液晶顯示器或具有機發光二極體之平面 顯示器。 ' 29.如請求項16之電子裝置’其中該電子裝置係為計算裝 置。 30. 如請求項29之電子裝置,其中該計算裝置係為個人電腦 或筆記型電腦。 31. 如請求項16之電子裝置,其中該電子裝置係為影音多媒 體電子裝置。 131648.doc 200951231 32.如請求項31之電子裝置’其中該影音多媒體電子裝置係 為接收/播放影像及音訊至少其中之一。 33·如請求項31之電子裝置,其中該影音多媒體電子裝置係 為卡帶式音訊播放裝置、組合式音響、MP3播放裝置或 MP4播放裝置》 34.如請求項16之電子裝置,其中該電子裝置係為電腦輸入 裝置。200951231 X. Patent application scope: 1. A bismuth-based metal alloy film, wherein the content of bismuth is 62 to 85 percent by weight, and the remaining weight percentage is metal, and the metal is selected from aluminum, nickel, titanium, A group of zinc or a combination thereof. 2. The stone base metal alloy film of claim 1, wherein the thickness of the stone base metal alloy film is 200 to 600 nm. 3. The stone base metal alloy film of claim 1, wherein the bismuth metal alloy film has a resistance value greater than 100 M ohm. 4. The bismuth based metal alloy thin layer of claim 1, wherein the bismuth based metal alloy is a bismuth aluminum alloy. 5. The bismuth based metal alloy thin film of claim 1, wherein the bismuth based metal alloy film is electrically insulating. 6. The bismuth based metal alloy thin film of claim 1, wherein the bismuth based metal alloy thin tantalum is an amorphous continuous structure. 7. The base metal alloy film of claim 1, further comprising at least one pattern disposed on a surface of the base metal alloy film. 8. The ruthenium-based metal alloy film of claim 7, further comprising a base thin film, wherein the pattern is disposed between the base metal alloy film and the base film. 9. The ground metal alloy film of claim 8, wherein the base film is a polymer film. 10. A cover sheet having a base metal alloy film, comprising: a casing; and a base metal alloy film disposed on a surface of the casing, wherein the content of niobium is 62 to 85 percent Weight percent remaining weight 131648.doc 200951231 The percentage is metal and the metal is selected from the group consisting of aluminum, nickel, titanium, zinc or combinations thereof. 11. The outer cover of claim 10, wherein the base metal alloy is yttrium aluminum alloy 丨2. The outer cover of claim 10, wherein the base metal alloy film is electrically insulated. 13. The outer cover of claim 10, wherein the bismuth based metal alloy film is an amorphous continuous structure. 14. The cover of claim 1 further comprising at least one pattern disposed on a surface of the base metal alloy film. 15. The cover of claim 14 further comprising a colored light transmissive layer covering the pattern and the base metal alloy film. 16. An electronic device having a ruthenium-based metal alloy film, comprising: a casing; and a stone base metal alloy film disposed on a surface of the casing, wherein the content of φ 矽 is 62 to 100 percent 85 wt%, the remaining weight percentage is metal, the metal is selected from the group consisting of aluminum, nickel, titanium, zinc or a combination thereof. The electronic device of claim 16, wherein the housing is a non-metallic substrate. 18. The electronic device of claim 17, wherein the non-metallic substrate is a plastic material. 19. The electronic device of claim 16, wherein the bismuth based metal alloy film has a thickness of from 200 to 600 nm. 20. The electronic device of claim 16, wherein the bismuth based metal alloy film has a resistance greater than 100 M ohms. 21. The electronic device of claim 16, wherein the bismuth based metal alloy is a bismuth aluminum alloy. 22. The electronic device of claim 16, wherein the bismuth-based metal alloy film is electrically insulated. The electronic device of claim 16, wherein the housing is manufactured by an injection molding method. The electronic device of claim 16, further comprising at least one pattern disposed on a surface of the base metal alloy film. 25. The electronic device of claim 16, wherein the electronic device is a mobile communication device. 26. The electronic device of claim 25, wherein the mobile communication device is a mobile telephone or a personal digital assistant (PDA). 27. The electronic device of claim 16, wherein the electronic device is an image display device. The electronic device of claim 27, wherein the image display device is a cathode ray tube display, a liquid crystal display, or a flat display having an organic light emitting diode. 29. An electronic device as claimed in claim 16, wherein the electronic device is a computing device. 30. The electronic device of claim 29, wherein the computing device is a personal computer or a notebook computer. 31. The electronic device of claim 16, wherein the electronic device is an AV multimedia device. The electronic device of claim 31, wherein the audio-visual multimedia device is at least one of receiving/playing video and audio. 33. The electronic device of claim 31, wherein the audio-visual multimedia device is a cassette-type audio playback device, a combined audio system, an MP3 playback device, or an MP4 playback device. 34. The electronic device of claim 16, wherein the electronic device It is a computer input device. 35. 如請求項34之電子裝置,其中該電腦輸入裝置係為滑鼠 或鍵盤。 36. 如請求項16之電子裝置,其中該矽基金屬合金薄膜係為 非晶質連續結構。 37. —種形成矽基金屬合金薄膜於一殼體表面之製造方法, 包括: (a)提供一矽基金屬合金靶材,其中該金屬係選自鋁、 鎳、鈦、辞或其組合之群;及 ❹ (b)形成一矽基金屬合金薄膜於該殼體之表面,其中該 矽基金屬合金薄膜中石夕之含量為百分之62至百分之 85重量百分比,其餘重量百分比為該金屬。 ' 38.如明求項37之製造方法,其中在步驟⑷中所使用之該石夕 基金屬合金靶材係為晶質結構。 39.如明求項37之製造方法,其中在步驟⑻中係利用滅鑛方 法形成該矽基金屬合金薄臈於該殼體之表面。 4〇·如請求項37之製造方法,其中在步驟⑻中另包括-步 驟’形成至少一圖樣於該矽基金屬合金薄膜之表面。 131648.doc 200951231 41_如請求項40之製造方法,其中在形成該圖樣步驟之後, 另包括一步驟,形成一彩色透光層,以覆蓋該矽基金屬 合金薄膜及該圖樣。 42. 如請求項37之製造方法,其中步驟(b)包括以下步驟: (bl)提供一基礎薄膜; (b2)賤鍍該矽基金屬合金薄膜於該基礎薄膜之該表面, _ 以形成一轉印基材; ❿ (b3)設置該轉印基材於一成型模具中,該成型模具之内 部形狀係配合該殼體之形狀,該基礎薄膜之另一表 面接觸該成型模具之内面; (b4)以射出成型方法設置製造該殼體之材料於該成型模 具中,使該殼體結合該矽基金屬合金薄膜:及 (b5)移除該成型模具及該基礎薄膜。 43. 如請求項42之製造方法’其中在步驟(bi)之後另包括一 步驟’形成至少一圖樣於該基礎薄膜之一表面。 ❹ 44.如請求項43之製造方法’其中在步驟(b5)之後,另包括 一步驟’形成一彩色透光層,以覆蓋該矽基金屬合金薄 ^ 膜及該圖樣。 45.如請求項37之製造方法,其中在步驟(b)之濺鍍方法為直 流(DC)濺鐘、直流加脈衝(DC and pulse)濺鑛或射頻(RF) 錢鑛。 131648.doc35. The electronic device of claim 34, wherein the computer input device is a mouse or a keyboard. 36. The electronic device of claim 16, wherein the bismuth based metal alloy film is an amorphous continuous structure. 37. A method of forming a bismuth-based metal alloy film on a surface of a casing, comprising: (a) providing a bismuth-based metal alloy target, wherein the metal is selected from the group consisting of aluminum, nickel, titanium, rhodium, or combinations thereof. And (b) forming a ruthenium-based metal alloy film on the surface of the casing, wherein the ruthenium-based metal alloy film has a content of 62 to 85 percent by weight, and the remaining weight percentage is metal. 38. The method of producing the item 37, wherein the stone base metal alloy target used in the step (4) is a crystalline structure. 39. The method of manufacturing according to claim 37, wherein in the step (8), the bismuth-based metal alloy is formed on the surface of the casing by a method of killing. 4. The method of claim 37, wherein the step (8) further comprises the step of forming at least one pattern on the surface of the base metal alloy film. The method of claim 40, wherein after the step of forming the pattern, a step is further included to form a colored light transmissive layer to cover the bismuth based metal alloy film and the pattern. 42. The method of claim 37, wherein the step (b) comprises the steps of: (bl) providing a base film; (b2) plating the base metal alloy film on the surface of the base film, to form a Transfer substrate; ❿ (b3) disposing the transfer substrate in a molding die, the internal shape of the molding die is matched with the shape of the casing, and the other surface of the base film contacts the inner surface of the molding die; B4) arranging the material of the casing in the molding die by an injection molding method, bonding the casing to the base metal alloy film: and (b5) removing the molding die and the base film. 43. The method of manufacture of claim 42 wherein the step (bi) further comprises a step of forming at least one pattern on a surface of the base film. ❹ 44. The method of manufacture of claim 43, wherein after step (b5), further comprising a step of forming a colored light transmissive layer to cover the bismuth based metal alloy thin film and the pattern. 45. The method of manufacture of claim 37, wherein the sputtering method in step (b) is a direct current (DC) sputtering clock, a DC plus pulse or a radio frequency (RF) money mine. 131648.doc
TW97122252A 2008-06-13 2008-06-13 A silicon-based metal alloy film, a silicon-based metal alloy film and an electronic device, and a method of manufacturing a silicon-based metal alloy film on a surface of a case TWI388675B (en)

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Publication number Priority date Publication date Assignee Title
CN103687345A (en) * 2012-09-05 2014-03-26 中国钢铁股份有限公司 Surface fingerprint-resistant substrate and manufacturing method thereof
CN103687345B (en) * 2012-09-05 2016-06-01 中国钢铁股份有限公司 Method for manufacturing surface fingerprint-resistant substrate
TWI586524B (en) * 2012-09-05 2017-06-11 China Steel Corp Surface anti-fingerprint substrate and manufacturing method thereof

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