TW200950894A - Removing pesticides from vegetables and fruits with porous nano-sized sintered objects - Google Patents
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200950894 九、發明說明: 【發明所屬之技術領域】 利用具多孔性奈米燒結物置入供清洗蔬果的泡水内,藉其恆常 釋放,游離電子和遠紅外線以破壞水之氫鍵,使水活化,從而得 加速蔬果上農藥物之溶解去除作用。 【先前技術】 一般豕庭處理蔬果上殘留農藥物的方法,都將蔬果浸 讓殘留農藥物緩慢溶解浸人水巾"_農藥物在—般水 ©溶解度不大’即使作較長時間的浸泡,仍然難將農藥物完全 況且長時間浸泡也容易使養分流失。 ” L發明内容】 士奈米材料表面均具豐富的表面吸著電子,其可 游離’遺留原位成為化性活潑的表面自 1 ❹ 如下並在奈米材料表面附近空間密電 依攄=2=所呈現週於常規材料的特性,目前尚缺乏理論 ίΐΐί釋外’研發工作正陷於摸索中求前進的情況,所: 科學諸理論’據此即能解決有關奈米 象.解^f.觸㈣α錢科知躺㈣哺種夺米頊 更多“發工作在摸索中前進咖境;可發掘奈米材料 關係’會出現缺少共價電子的表面殘鍵,而; 200950894 米表面自由基具有極強還原力,— =負電。由於奈 奈米測器靠物體即可;ί 以表面吸著面殘鍵多屬強力的共價鍵,所 〇 ς=/,則奈米表面吸著電子喊態魅右^ 取冋此位匕猶高的能隙⑶中,如第一圖所示。在比仏帶⑵ ,然奈米體的表面吸著電子可視同Ν型半 體),但兩者有著明顯的區別,Α一是太乎 中的電子(知 Ν型半導體不帶電,其次1米吸二^;*有豐富的負電,而 型半導體的) 不 著電子存在於材料表面,而ν 存在於材料内部。由於奈米表面吸著: ,:第—圖中,當表面吸著電子所獲得升 吸著電子的能位就進入傳導帶(1);如第二 ' ^ a)時1表面 春 的能位超過&加功函數Φ值時,即可脫^夺^料表電子 絲電子有下形種方式狄能;;’奈米表面 (1) 光子撞擊引起導電或游離作用; (2) 電磁輻射引起游離作用; (3) 粒子撞擊引起導電或游離作用; (4) 吸收電磁波生熱作用; (5) 傳導熱和幅射熱引起導電或游離作用; (6) 電場牽引起導電或游離作用; , ⑺吸收纽(超音賴力糾丨起導電或游離作用; 200950894 (8) 吸收稀釋波(超音速拉力波)引起導電或游離作用; (9) 受劇變磁場感應引起導電或游離作用; (10) 受互為垂直的靜態電場和磁場之感應引起導電增強作 用; (11) 吸收彈性波(音波和超音波)引起導電或游離作用; (12) 摩擦引起導電或游離作用。 Ο Φ # 奈米材料之所以具有諸多奇異特性,均因帶負電的表面吸 著電子會容易吸收上述各種不同型態能並起能位變遷或游離化所 引,。這些奇異特性包括:(1)光觸媒作用;(2)化學觸媒作用;(3)放 射遠紅一外線和負電子作用;(4 )雙親及雙疏表面現象;(5 )分散作 用;=)局折光率;⑺高誘電率;⑻遠紅外線反射性丨⑼反射遮光作 用Ik材料粒徑變小而起藍移現象;(1〇)高電導率;(11)高熱導 f;(12)高比熱;⑽輻射散熱及防火性;(⑷乾式研磨起黏g現 象,^⑸低炫點;(16)聿刃性增加;(17)蒸氣壓上升;(⑻對電磁波吸收 吸ί性;(20)毛細管現象;(21)奈米粉體和塑膠等共混起架 併使強度增力α、導電率上升、阻氣性變佳;⑽非磁性材料 性;(23)奈米磁性體的迥異磁學特性;⑽巨磁電阻現 太原理;(26)活性炭的殺g_;(27)性質奇 阻ΐ : Vi I ΐ屬粉體呈黑色;(29)奈米金屬粉體的電 t’(35)i ^去污㈣作用;(33)制滑作用;⑽吸震作 :ί。,力能·奈米導波管;(37)低溫超導電 At’=有,夕仏助奈米現象的應用例,諸如:微電子元件、 線和芑=二。37項特性中編號第⑶故射遠紅外 一鵡表面積上有Ns個配位不足的懸鍵,並假設每 鍵均了捕㈣個—個吸著電子’則球狀奈米材料之吸著電子 200950894 之體密度(單位體積之數目)Nd為 3N,200950894 IX. Description of the invention: [Technical field to which the invention belongs] The porous nano-sinter is placed in the water for cleaning fruits and vegetables, and by its constant release, free electrons and far infrared rays destroy the hydrogen bonds of water, so that water Activation, so as to accelerate the dissolution and removal of agricultural drugs on fruits and vegetables. [Prior Art] Generally, the method of treating the residual agricultural drugs on fruits and vegetables in the courts is to soak the fruits and vegetables to allow the residual agricultural drugs to slowly dissolve and soak the human water towel "_ agricultural drugs in the water - solubility is not large, even for a long time Soaking, it is still difficult to completely remove the agricultural drugs and soak the nutrients for a long time. "Invented by L] The surface of the Snei material has a rich surface absorbing electrons, which can be freed to remain in situ and become a viable surface from 1 ❹ as follows and close to the surface of the nanomaterial. = The characteristics of the conventional materials are presented, and there is still a lack of theory. The research and development work is being entangled in the process of seeking for progress. The scientific theory can solve the problem of nano-images. (4) Alpha Keke knows lying (4) Feeding and cultivating rice glutinous rice more "Working in the groping for advancing the coffee environment; discovering the relationship between nanomaterials" will result in surface residual bonds lacking covalent electrons; and 200950894 Strong reduction force, — = negative power. Because the Nana meter can rely on the object; ί is a powerful covalent bond on the surface of the surface, and the 表面 = /, then the surface of the nano absorbing the electronic screaming charm right ^ take this position 匕In the high energy gap (3), as shown in the first figure. In the comparison belt (2), the surface of the nano-body is absorbing the electron-visible type of half-body, but the two have obvious differences. The first one is the medium of the electron (the semiconductor is not charged, and the second is 1 meter). The absorption of two ^; * has a rich negative, while the type of semiconductor) does not exist on the surface of the material, and ν exists inside the material. Because the surface of the nanometer is sucked: ,: In the figure, when the surface attracts electrons, the energy of the electrons rising into the electrons enters the conduction band (1); as in the second '^ a), the energy level of the surface of the spring When the value of Φ exceeds the sum of the function of the work function, the electrons of the electrons can be removed. The surface of the electrons has a lower form; Dimensional surface; (1) photon impact causes conduction or free action; (2) electromagnetic radiation (3) Electromagnetic or free action caused by particle impact; (4) Electromagnetic heat absorption; (5) Conductive or radiative heat causes conduction or free action; (6) Electric field traction causes conduction or free action; (7) Absorbing New Zealand (Supersonic Reinforcement to Conduct Conductive or Free Action; 200950894 (8) Absorbing Dilution Wave (Supersonic Rally Wave) causes conduction or free action; (9) Conductive or free action caused by drastically induced magnetic field; 10) Conductive enhancement caused by the induction of static electric and magnetic fields perpendicular to each other; (11) Absorption of elastic waves (sonic and ultrasonic) causes conduction or free action; (12) Friction causes conduction or free action. Ο Φ #奈The reason why rice materials have many strange features Both of them are attracted by the negatively charged surface absorbing electrons, which can easily absorb the above various types of energy and change or dissociate. These singular characteristics include: (1) photocatalytic action; (2) chemical catalyst action; (3) Radiation far-red outside and negative electrons; (4) Parent and double sparse surface phenomena; (5) Dispersion; =) local refractive index; (7) high induction rate; (8) far-infrared reflective enthalpy (9) reflection shading Ik material particle size becomes small and blue shift phenomenon; (1〇) high conductivity; (11) high thermal conductivity f; (12) high specific heat; (10) radiation heat dissipation and fire resistance; ((4) dry grinding to make g g phenomenon, ^ (5) low sloshing point; (16) increased blade edge; (17) vapor pressure rise; (8) absorption of electromagnetic waves; (20) capillary phenomenon; (21) blending of nano-powder and plastic Strength increase α, conductivity increase, gas barrier property is better; (10) non-magnetic material property; (23) nano magnetic properties of nano magnetic body; (10) giant magnetoresistance is too principle; (26) activated carbon kill g_; (27) Sexual resistance: Vi I is a black powder; (29) electric t'(35)i ^ decontamination (4) of nano metal powder; (33) slipping effect; (10) shock absorption: ί.,力能·米米导波管; (37) Low-temperature superconducting At'= application examples of the phenomenon of nano-assisted nanometers, such as: microelectronic components, lines and 芑=2. In the third (3) shot, there are Ns insufficient dangling bonds on the surface area of the far infrared, and it is assumed that each key captures (four) - one attracting electron', and the bulk density of the absorbing electrons of the spherical nanomaterials 200950894 ( The number of unit volumes) Nd is 3N,
Nd= r (1) 式中r為奈米球之半徑。(1)式表示表面吸著電子體密度恆與 奈米材料之尺寸成反比例,即材料顆粒愈小,表面吸著電子體密 度愈大。 觀察第一圖和第二圖得知,若外界電磁輻射能(光子能) h u > (Ed+E。)時,奈米表面吸著電子即可吸收該輻射能而游離。 設輻射強度I ’奈米表面吸著電子體密度Nd,則奈米材料表面吸 ❹著電子之游離數目必與I和Nd之乘機積成正比例,所以游離 子濃度(N)之變化率為 电 dN dt AINd -RN2 (2) 率項AINd絲單健積之絲_電子游離 率,A為電磁輻射吸收係數;第二項表示電子與 ^復合率’ R為復合係數(Rec〇mbinati〇nc〇effid邮、)。土 7 dN/dt=0時’得穩定狀態下的游離電子濃度n。為 參 N〇 3AINs ~~ΒΪ~ M2 KJ) 增加而變大,況且㈣()小及電贿射強度⑴ 材料之阻擋(反射作用)影塑,較二電磁輻射不受Nd= r (1) where r is the radius of the nanosphere. The formula (1) indicates that the density of the surface absorbing electrons is inversely proportional to the size of the nanomaterial, that is, the smaller the material particles, the larger the surface absorbing electron density. Observing the first figure and the second figure, if the external electromagnetic radiation energy (photon energy) h u > (Ed+E.), the surface of the nanometer absorbs the electrons to absorb the radiant energy and dissociate. Let the radiation intensity I' nano surface absorb the electron density Nd, then the free number of electrons sucked on the surface of the nano material must be proportional to the multiplication of I and Nd, so the change rate of the swimming ion concentration (N) is electricity. dN dt AINd -RN2 (2) rate AINd silk single-strength silk _ electron liberation rate, A is the electromagnetic radiation absorption coefficient; the second term indicates the electron and ^ composite rate 'R is the composite coefficient (Rec〇mbinati〇nc〇 Effid post,). When the soil is 7 dN/dt = 0, the free electron concentration n in the steady state is obtained. Increased and increased for the reference N〇 3AINs ~~ΒΪ~ M2 KJ), and (4) () small and electric bribery intensity (1) material blocking (reflection) shadow plastic, not affected by electromagnetic radiation
值及小r值_ ^= Ϊ H 奈米材料賦有大A值、小R 出現。另具㈣娜電子的 万面在先奸絲件下,單__表面吸著電子 200950894的游離數目 之數目相;:巧面,成為表面吸著電子 子能之在fi過程釋放該表面吸著電子所賦有的較低光 于此之電磁輻射’如第三圖所示。總之 ϊΐί將外界較高能電磁輻射轉換成較低能之特定輻di 表面空間呈現某敎濃度之電子料 ’並在其 其 魯 λ=Value and small r value _ ^= Ϊ H The nano material is given a large A value and a small R appears. In addition, (4) Na's electronic face is under the first piece of silk, the number of free numbers of the surface of the electronic absorbing film 200950894 is __ surface, the surface is absorbing the electrons, and the surface is absorbing. The lower electromagnetic radiation imparted by the electrons is shown in the third figure. In short, ϊΐί converts the externally high-energy electromagnetic radiation into a lower energy specific surface area of the dipole, and presents an electron concentration of a certain concentration, and in its
hC 6.625x1〇'27x3xi〇i〇 Ε 3x 103χ4.2χ 1 〇7/6.〇24χ 1023 = 9.5xlCr4cm=9 5/Um (4) 如果E=5kCal/mole時’其對應波長又=5 7鋒,因此波長 ϊ子 可引起水氣鍵的共振破壞伽,使大 2同t?使亦可"和氣鍵上之正電而使氣鍵起瓦解 【實施方式】 ❹r 般ίί金屬氧化物所釋放電磁11射光譜都射在遠紅外線 ^ f加奈,料的輻射頻寬起見,本案乃採用粒徑 一 nm以下之夕種金屬氧化物〔包括:四氧化三鐵(Fq〇4)、二 ,化鈦(ή〇2 )、氧化鉛(Zr〇2)、二氧化石夕⑽2)、氧化鎮(Mg〇)二 乳化部(CaO)及三氧化κΥ2〇3)等〕 ^ 陶土’再壓製成短薄圓柱形,送入電爐内以12〇叱之溫 具多孔性奈_製物。該製物在52t:T波長3〜15叫範圍内 之平均放射率為0.905,9〜ΙΟμηι的平均放射率為〇 921。使用時 將該具多孔性奈米陶製物置入供清洗蔬果的泡水内,即可提升水 分子活性,加速去除蔬果上農藥物之溶解作用。 200950894 【圖式簡單說明] 為:奈米表面吸著電子的能位圖。 蓋三!凰為:表面傳導電子之能位圖。 羞έΐ為.奈米表面吸著電子的游離及復合之光電作用示 【主要元件符號說明】 蓋二_圖圖號'· 傳導帶,(2)-—價帶,(3)_—能隙, ν —-價帶最南能位,hC 6.625x1〇'27x3xi〇i〇Ε 3x 103χ4.2χ 1 〇7/6.〇24χ 1023 = 9.5xlCr4cm=9 5/Um (4) If E=5kCal/mole, its corresponding wavelength is again = 5 7 front Therefore, the wavelength dice can cause the resonance of the water-gas bond to destroy the gamma, so that the large 2 is the same as the t? and can also be positively charged on the gas key to cause the gas bond to collapse [embodiment] ❹r-like ίί metal oxide released The electromagnetic 11-ray spectrum is shot in the far-infrared ray, and the radiation bandwidth of the material is used. In this case, the metal oxides with a particle size of less than one nm are included (including: ferric oxide (Fq〇4), II. Titanium (ή〇2), lead oxide (Zr〇2), dioxide (10)2), oxidized town (Mg〇) emulsifier (CaO) and oxidized κΥ2〇3), etc. ^Ceramics' re-compressed It has a short and thin cylindrical shape and is fed into an electric furnace with a temperature of 12 温. The average emissivity of the product in the range of 3 to 15 in the 52t:T wavelength range is 0.905, and the average emissivity of 9~ΙΟμηι is 921 921. When used, the porous nano-ceramic material is placed in the soaking water for washing fruits and vegetables, thereby improving the activity of water molecules and accelerating the dissolution of agricultural drugs on fruits and vegetables. 200950894 [Simple description of the diagram]: The energy level map of the electrons on the surface of the nanometer. Cover three! Huang is: the energy level map of surface conduction electrons. Shame is the surface of the nano-sucking electrons and the photo-electric effect of the composite [main component symbol description] cover two_图图号'· conduction band, (2)--valence band, (3)_-gap , ν --- the most southern energy level,
Ea表面吸著電子的基態能位, ® Εε料帶的ft低能位, E ~傳導帶的最向能位,Ed=Eg-Ea。The surface of Ea attracts the ground state energy of the electron, the ft low energy of the ® Εε band, and the most energy level of the E ~ conduction band, Ed = Eg-Ea.
功函數, 它β Fermi能位, 子從最低能位G脫離表面所需能量, υ〜-傳導帶的最低能位為零, ⑴—傳導帶,真空,①-一表面。The work function, its β Fermi energy position, the energy required to get detached from the lowest energy G from the surface, υ~-the lowest energy level of the conduction band is zero, (1)—conduction band, vacuum, 1-one surface.
卜〜奈米表面吸著電子 2 一〜奈米表面自由基 t〜游離電子 4〜〜較高能電磁輻射被奈米表面吸著電子吸收 k游離電子與表面自由基復合時釋放較低能電磁輕射 6~一·表面吸著電子游離後遺留原位成為表面自由基 7 -表面自由基與電子復合後遺留觀成為表面吸著電子 200950894 8- --奈米表面吸著電子的能位 9- --游離電子的最低能位(動能為零)Bu ~ nano surface absorbing electrons 2 ~ ~ nano surface free radical t ~ free electrons 4 ~ ~ higher energy electromagnetic radiation is absorbed by the surface of the nanometer electron absorption k free electrons combined with surface free radicals release low energy electromagnetic light Shot 6~1·Surface occludes electrons and remains in place to become surface free radicals 7 - Surface free radicals and electrons recombine after leaving surface to become surface absorbing electrons 200950894 8- --Nano surface absorbing electron energy level 9- -- the lowest energy of free electrons (zero kinetic energy)
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