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TW200940601A - Precursor for heat-resistant resin and photosensitive resin composition containing the same - Google Patents

Precursor for heat-resistant resin and photosensitive resin composition containing the same Download PDF

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TW200940601A
TW200940601A TW97150748A TW97150748A TW200940601A TW 200940601 A TW200940601 A TW 200940601A TW 97150748 A TW97150748 A TW 97150748A TW 97150748 A TW97150748 A TW 97150748A TW 200940601 A TW200940601 A TW 200940601A
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group
parts
compound
mass
acid
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TW97150748A
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TWI386436B (en
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Takayuki Kanada
Yuka Sasaki
Satoshi Shibui
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Asahi Kasei Emd Corp
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    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/14Polyamide-imides
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G69/00Macromolecular compounds obtained by reactions forming a carboxylic amide link in the main chain of the macromolecule
    • C08G69/02Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids
    • C08G69/26Polyamides derived from amino-carboxylic acids or from polyamines and polycarboxylic acids derived from polyamines and polycarboxylic acids
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007Filters, e.g. additive colour filters; Components for display devices
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/022Quinonediazides
    • G03F7/023Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable

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  • Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
  • Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

An alkali-soluble resin is provided which contains no halogen atom in the molecule, has high sensitivity, and attains a wide margin of film thickness in pattern formation conducted using the same exposure amount and the same development period. The resin can be developed with the developing solution in general use in semiconductor device production steps (2.38% aqueous TMAH solution), is soluble in γ -butyrolactone, and is suitable for use in photosensitive resin compositions. This resin has, in the molecule, a structure represented by general formula (1): {wherein X1 represents a tetravalent organic group containing no halogen atom; and Z1 represents a divalent organic group represented by general formula (2): (wherein L1, L2, and L3 each independently represents hydrogen or methyl and L4 represents hydrogen, methyl, or hydroxy)}.

Description

200940601 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種鹼溶性樹脂、及包含該鹼溶性樹脂之 正型或負型感光性樹脂組合物’該鹼溶性樹脂係用以形成 電子零件或顯示元件之絕緣材料、以及於半導體裝置中之 鈍化膜、緩衝膜、層間絕緣膜等中所使用之耐熱性樹脂材 料之起伏圖案者。 【先前技術】 Ο 於半導體裝置之表面保護膜或層間絕緣膜之用途中,廣 泛已知較好的是兼有優異之耐熱性、電氣特性、及機械特 性之聚酿亞胺樹脂。用於該用途之聚酿亞胺樹脂一般係以 感光性聚醯亞胺前驅物組合物之形式提供’將其塗布於梦 晶圓等基板,依次施以藉由活性光線所進行之圖案化曝 光、顯影、及熱醯亞胺化處理,藉此可容易使具有微細之 起伏圖案之耐熱性樹脂皮膜形成於該基板上。 然而’使用上述感光性聚醯亞胺前驅物組合物之情形 ® 時’於其顯影步驟中’需要使用大量有機溶劑作為顯影 液,就成本之觀點、安全性、及近年來對環境問題之關心 高漲方面而言,要求去除有機溶劑之對策。為此,最近提 出各種與光阻劑同樣地能夠以稀鹼性水溶液進行顯影之耐 熱性感光性樹脂材料。 最近受到關注的是:包含於稀鹼性水溶液中具有可溶性 之聚羥基醯胺、即聚苯并哼唑(以下亦稱為「pB〇j )前驅 物與感光性重氮萘醌化合物(以下亦稱為「NQD」)等光活 136993.doc -6 - 200940601 性成分(以下亦稱為「PAC」)之感光性樹脂組合物(以下參 照專利文獻1),並應用於實際中。除此以外,作為能夠以 稀驗性水溶液進行顯影之耐熱性感光性樹脂組合物,亦提 出並使用如下物質,即於側鏈中導入有酚性羥基之鹼溶性 樹脂與PAC之組合、及於骨架中利用偏苯三甲酸而使聚醯 亞胺前驅物單元與PBO前驅物單元交替相連而成之聚酿亞 胺-PBO前驅物聚合物與PAC之組合等多數者。 於上述耐熱性感光性樹脂組合物中,與pAC併用之鹼溶 ® 性樹脂係以聚酿亞胺前驅物或PBO前驅物等具有酚性羥基 之聚醯胺為主流。藉由將該酚性羥基導入至聚合物骨架 中,而於顯影時使曝光部溶解於稀鹼性水溶液中,且未曝 光部由於盼性經基與PAC具有相互作用而溶解得以抑制, 從而可形成正型之起伏圖案。 作為於聚合物中導人雜㈣之方法,—般係將具有相 互處於鄰位之胺基及酚性羥基之芳香族二胺(以下亦稱為 〇 「酚性二胺」)作為聚醯胺之原#,而使之與羧酸進行脫 水縮合。㈣紛性二胺之經基之酸性度較低之情形時,聚 酿胺不溶於稀鹼性水溶液,顯影時產生曝光部之溶解殘 餘,或無法實現顯影本身。另一方面,於齡性二胺之經基 之酸性度較高之情料,與PAC之相互作用較弱,顯影時 未曝光部亦溶解,而無法獲得優質之起伏圖案。 作為取得上述紛性:胺經基之酸性度與透明性之平衡的 胺2,2-雙(3-胺基_4-經基苯基)六氟丙烧較為優 異現在正廣泛用作正型感光性樹脂組合物之酚性二胺成 136993.doc 200940601 分。然而’近年來,由於半導體裝置之可靠性之提高及對 環境之考慮,而強烈要求不含如氟原子之鹵原子之材料。 又’於製造半導體裝置時之曝光步驟中,主要使用利用 有水銀燈之i線之稱為i線步進機之縮小投影曝光機。該步 進機係非常昂貴之機械,因此若感光性樹脂組合物為低敏 感度,則形成起伏圖案所需之曝光時間變長,需要之步進 機之台數增加,從而導致曝光製程之高成本化。 因此,強烈要求提高感光性樹脂組合物之光敏感度。於 ® 正型感光性樹脂組合物中,為了提高光敏感度,首先需要 提高聚合物之i線之穿透性,而不妨礙曝光部之PAc之分 解。因此,對於用於正型感光性樹脂組合物之聚合物,要 求提高i線穿透性。進而,聚合物之酚性羥基與pAC之相互 作用越強,未曝光部與曝光部對鹼性顯影液之溶解速度的 差越大,結果光敏感度變高。因此,對於用於正型感光性 樹脂組合物之聚合物,要求其與pAC之相互作用較強。 ◎ 另方面,近年來,作為用於耐熱性感光性樹脂組合物 之♦劑,存在較之鹼性較高之\•曱基吡咯啶酮之類的醯胺 系溶劑、更傾向於丁内醋之類的中性溶劑之傾向,作為 半導體製造步驟迫切需要之溶劑而舉出。因此,對於用於 正型感光性樹脂組合物之聚合物,要求其溶於丫_ 丁内酯。 又,作為使用耐熱性感光性樹脂組合物而形成圖案時所 使用之稀驗性顯影液,通常於半導體製造步驟中使用2·38 重量/。四甲基氫氧化録水溶液(以下亦稱$「2 Μ% τμαη 岭液」)’因此強烈要求能夠以2 3 水溶液進行 136993.doc 200940601 顯影。 進而,於半導體裝置之製造步驟中,塗布保護膜用途之 感光性組合物之矽晶圓由於已形成配線電路或外部連接用 端子,因此表面不均勻。於其影響下,將感光性樹脂組合 物塗布於形成有配線電路或外部連接用端子之矽晶圓之·= 形時,感光性樹脂組合物層之膜厚於晶圓面内變得不均 勻。在通常之保護膜用途之感光性樹脂組合物中,於所塗 布之膜厚產生變化之情形時,存在如下問題,即需要改變 ® $成圖案所需之曝光量與顯影時間,膜厚產生變化之情形 的圖案形成製程之邊際(margin)狹小。因&,強烈要求以 相同曝光量、相同顯影時間形成圖案之情形時的膜厚邊際 較廣之感光性樹脂組合物。 業者提出一種正型感光性樹脂組合物(以下參照專利文 :2)’其使用酚性羥基之酸性度較高之雙(3_胺基_4_羥基 本基)硬替代含氟原子之22_雙(3胺基·4_經基苯基)六氣丙 ❹⑨’來作為於分子内不含i原子之ΡΒΟ前驅物,並包含該 〇前驅物與一羧酸之縮合物及pAc。然而,於專利文獻2 之實施例中’二竣酸係使用具有氟原子之化合物,進而, 顯影液亦並非半導體製造步驟巾通常所使用之2.遍 ™AH水溶液’而是使用0.79% TMAH水溶液。-般認為 進行sx等之目的係、為了控制源自雙(3_胺基·4_經基苯基)礙 丨羥基的較強之聚合物之驗溶解性。本案發明者在作 為二,酸而合成專利文獻2中所記載之不含函原子之Ο,· 氧雙苯f酸與雙(3·胺基·4_經基苯基)礙之聚縮合物時,結 136993.doc 200940601 果所得之聚合物不溶於γ-丁内酯,對i線之透明性較高,但 與PAC之相互作用較低,因此並非可充分滿足光敏感度 者。[Technical Field] The present invention relates to an alkali-soluble resin and a positive or negative photosensitive resin composition containing the alkali-soluble resin, which is used to form an electronic component. Or an insulating material of the display element, and an undulating pattern of a heat resistant resin material used in a passivation film, a buffer film, an interlayer insulating film, or the like in a semiconductor device. [Prior Art] Among the applications of the surface protective film or the interlayer insulating film of a semiconductor device, a polyacrylonitrile resin having excellent heat resistance, electrical properties, and mechanical properties is widely known. The polyiminoimide resin used for this purpose is generally provided in the form of a photosensitive polyimide intermediate composition composition, which is applied to a substrate such as a dream wafer, and is sequentially subjected to pattern exposure by active light. And development, and thermal imidization treatment, whereby a heat resistant resin film having a fine undulating pattern can be easily formed on the substrate. However, 'in the case of using the above-mentioned photosensitive polyimideimine precursor composition®, 'in its development step' requires the use of a large amount of organic solvent as a developing solution, in terms of cost, safety, and concern for environmental problems in recent years. In terms of upswing, countermeasures for removing organic solvents are required. For this reason, various heat-resistant photosensitive resin materials which can be developed with a dilute alkaline aqueous solution in the same manner as the photoresist have recently been proposed. Recently, attention has been paid to polyhydroxyguanamines which are soluble in dilute alkaline aqueous solutions, namely polybenzoxazoles (hereinafter also referred to as "pB〇j" precursors and photosensitive diazonaphthoquinone compounds (hereinafter also A photosensitive resin composition (hereinafter referred to as "PAC") having a photoactive activity (hereinafter referred to as "PAC"), such as "NQD", is used in practice. In addition, as a heat-resistant photosensitive resin composition which can be developed with a rare aqueous solution, a combination of an alkali-soluble resin having a phenolic hydroxyl group introduced into a side chain and PAC, and a combination thereof are also proposed. A majority of the skeleton, such as a combination of a polyamidene-PBO precursor polymer and a PAC, which is obtained by using trimellitic acid to form a polyimine imine precursor unit and a PBO precursor unit alternately. In the above-mentioned heat-resistant photosensitive resin composition, the alkali-soluble resin used in combination with pAC is mainly a polyamine having a phenolic hydroxyl group such as a polyacrylimide precursor or a PBO precursor. By introducing the phenolic hydroxyl group into the polymer skeleton, the exposed portion is dissolved in the dilute alkaline aqueous solution during development, and the unexposed portion is dissolved by the interaction between the desired trans group and the PAC, thereby being inhibited. Form a positive relief pattern. As a method for introducing human (4) in a polymer, an aromatic diamine having an ortho-group and a phenolic hydroxyl group (hereinafter also referred to as "phenolic diamine") is generally used as a polyamine. The original #, and it is dehydrated and condensed with the carboxylic acid. (4) When the acidity of the rhodium group of the diamine is low, the polyamine is insoluble in the dilute alkaline aqueous solution, and the residual residue of the exposed portion is generated during development, or the development itself cannot be achieved. On the other hand, in the case where the acidity of the base of the diamine is higher, the interaction with the PAC is weak, and the unexposed portion is also dissolved during development, and a high-quality undulating pattern cannot be obtained. As an amine 2,2-bis(3-amino-4-trans-phenyl)hexafluoropropane which is excellent in the balance of the acidity and transparency of the amine group, it is now widely used as a positive type. The phenolic diamine of the photosensitive resin composition was 136,993.doc 200940601. However, in recent years, materials which do not contain a halogen atom such as a fluorine atom have been strongly demanded due to an increase in reliability of a semiconductor device and environmental considerations. Further, in the exposure step in the manufacture of a semiconductor device, a reduced projection exposure machine called an i-line stepper using an i-line having a mercury lamp is mainly used. The stepping machine is a very expensive machine, so if the photosensitive resin composition is low in sensitivity, the exposure time required to form the undulating pattern becomes long, and the number of stepping machines required increases, resulting in a high exposure process. Cost. Therefore, it is strongly required to increase the light sensitivity of the photosensitive resin composition. In the ® positive photosensitive resin composition, in order to improve the light sensitivity, it is first necessary to increase the penetration of the i-line of the polymer without hindering the decomposition of the PAc of the exposed portion. Therefore, for the polymer used in the positive photosensitive resin composition, it is required to improve the i-line permeability. Further, the stronger the interaction between the phenolic hydroxyl group of the polymer and pAC, the greater the difference in the dissolution rate of the unexposed portion and the exposed portion to the alkaline developing solution, and as a result, the light sensitivity is high. Therefore, the polymer used for the positive photosensitive resin composition is required to have a strong interaction with pAC. ◎ On the other hand, in recent years, as a ♦ agent for a heat-resistant photosensitive resin composition, there is a guanamine-based solvent such as ketopyrrolidone which is more alkaline, and more preferred is vinegar. The tendency of a neutral solvent or the like is exemplified as a solvent which is urgently required for a semiconductor manufacturing step. Therefore, for the polymer used in the positive photosensitive resin composition, it is required to be dissolved in 丫-butyrolactone. Further, as a rare developer which is used for forming a pattern by using a heat-resistant photosensitive resin composition, it is usually used in a semiconductor manufacturing step of 2.38 weight/. The tetramethylammonium hydroxide aqueous solution (hereinafter also referred to as "2"% τμαη 岭液)" is strongly required to be developed by 136993.doc 200940601 in a 2 3 aqueous solution. Further, in the manufacturing process of the semiconductor device, since the germanium wafer to which the photosensitive composition for protective film is applied is formed with a wiring circuit or an external connection terminal, the surface is uneven. When the photosensitive resin composition is applied to the ?? shape of the tantalum wafer on which the wiring circuit or the external connection terminal is formed, the film thickness of the photosensitive resin composition layer becomes uneven in the wafer surface. . In the photosensitive resin composition for a general protective film, when the film thickness to be applied is changed, there is a problem in that it is necessary to change the exposure amount and development time required for the pattern to be changed, and the film thickness changes. In the case of the pattern forming process, the margin is narrow. In the case of &, a photosensitive resin composition having a wide film thickness at the time of patterning with the same exposure amount and the same development time is strongly required. The present inventors have proposed a positive photosensitive resin composition (hereinafter referred to as Patent Document 2) which uses a bis (3-amino-4-hydroxyl group) having a higher acidity of a phenolic hydroxyl group as a hard substitute for a fluorine atom. _Bis(3-amino-4-yl-phenyl)hexapropene 9' is used as a ruthenium precursor containing no i atom in the molecule, and comprises a condensate of the ruthenium precursor with a monocarboxylic acid and pAc. However, in the example of Patent Document 2, 'dicarboxylic acid is a compound having a fluorine atom, and further, the developer is not an aqueous solution of TMAH used in a semiconductor manufacturing step, but using a 0.79% TMAH aqueous solution. . It is generally considered that the purpose of sx or the like is to control the solubility of a stronger polymer derived from bis(3-amino-4-yl)-hydroxyl group. The inventors of the present invention synthesize a condensate containing a functional atom described in Patent Document 2 as an acid, and an oxydiphenyl acid and a bis(3.amino-4-yl-phenyl) condensate. At the time, the polymer obtained by the 136993.doc 200940601 is insoluble in γ-butyrolactone, and has high transparency to the i-line, but has low interaction with the PAC, and thus is not sufficient for satisfying the light sensitivity.

業者亦提出一種包含於分子内不含鹵原子之含酚性羥基 之溶劑可溶性聚醯亞胺與PAC之正型感光性樹脂組合物(以 下參照專利文獻3)。於專利文獻3中,記載有如下聚合 物:其係具有含二環(2,2,2)-辛-7-烯-2,3,5,6-四曱酸二酐之 四繞酸二酐與含雙(3·胺基_4-羥基苯基)砜之芳香族二胺脫 水縮合而成的結構之聚縮合物,獲得聚縮合物之情形時, 在組合全部四羧酸二酐與全部芳香族二胺而成之全部原料 單體中,雙(3-胺基-4-經基苯基)職於添加原料時處於2〇莫 耳%〜40莫耳%之範圍’獲得聚縮合物時之全部四羧酸二酐 之莫耳數與全部芳香族二胺之莫耳數的比為1: 〇 75〜〇 87 或0.75〜0.87: 1之範圍,聚縮合物之重量平均分子量處於 5,000〜17,000之範圍。於專利文獻3中,揭示有一種不含鹵 原子之正型感光性樹脂組合物,其藉由在酚性二胺中使用 雙(3_胺基-4-經基苯基)颯,而於分子中不含齒原子並表 現鹼溶性與PAC之相互作用,藉由使用二環(2,2,2)_辛_7_ 烯2,3’5,6-四甲酸二肝,而提高對γ-丁内醋之溶解性與i線 透明性’藉由控制雙(3.胺基领基苯基)職之導入量與重 量平均分子量’而控制源自雙(3_胺基邻基苯基)硬之較 強之鹼’合解性’並且該正型感光性樹脂組合物可溶於γ· 丁 ^曰,.對1線充分透明,能夠以2.38% ™ΑΗ顯影液形成圖 案。然而,雙胺基_4•經基苯基)石風之導入量受到其驗溶 136993.doc 200940601 解性之高度之制限,因此聚合物内之㈣經基之密度下 降’又,源自雙(3·胺基_4·經基苯基)硬之雜經基與pAc 之相互作用較弱,因此期待一種具有更高敏感度之正型感 光性樹脂組合物。 於以下之專利文獻4中,揭示有包含脂環式二缓酸與紛 性二胺之;PBO前驅物,作為較好之二㈣記載有環己院 二缓酸,於實施例3中’揭示有將於分子中不含齒原子之 聚縮合物溶解於N_甲基_2_対錢而成之正型感光性樹 脂組合物n -般料,於2,2雙(3_胺基_4_經基苯 細與環己烧二缓酸之縮合物中,聚縮合物不溶於γ_丁内 醋,又’亦無法充分滿足正型感光性樹脂組合物 度。 ’ ❹ -除此以外’作為使用有脂環式二羧酸之前驅物,揭 不有以下之專利文獻5〜7,但一般認為還未提供如下聚合 物’匕即於分子内不含齒原子,溶於γ_丁内醋,且其感光性 樹脂組合物具有高敏感度,以相同曝光量、相同顯影時間 形成圖案之情形的膜厚邊際較廣者。 2 $於以下之專利文獻8中,揭示有使用有具有三環 从^錢結構之酿氣之耐熱性聚醯^於以下之專 利文獻9中,揭示有雖屬於阻氣膜之領域,但具有三環癸 烷結構之聚苯并唑樹脂。並且,於以下之專利文獻ι〇中, 揭有含有藉由ΡΒ〇前驅物樹脂與放射線照射而產生酸之 化合物、及藉由酸之作用而交聯所得之化合物的負型感光 性樹脂組合物。 136993.doc 200940601 [專利文獻1]曰本專利特開昭63_96162號公報 [專利文獻2]日本專利特開平U 119426號公報 [專利文獻3]國際公開第〇7/〇29614號小冊子 [專利文獻4]曰本專利特開2〇〇4_18594號公報 [專利文獻5]日本專利特開2〇〇4 18593號公報 [專利文獻6]日本專利特開2〇〇6 143943號公報 [專利文獻7]日本專利特開2〇〇6-3497〇〇號公報 [專利文獻8]日本專利特開昭58-11〇538號公報 [專利文獻9]曰本專利特開2〇〇6_218647號公報 [專利文獻10]日本專利第3966590號公報 【發明内容】 [發明所欲解決之問題] 本發明之目的在於提供一種鹼溶性樹脂,其作為感光性 樹脂組合物時,不含齒原子,以相同曝光量、相同顯影時 間形成圖案之情形的膜厚邊際較廣,具有高敏感度,可藉 由半導體裝置之製造步驟中通常所使用之顯影液(2·38重量 :四甲基氫氧化銨水溶液)而形成圖案,可溶於γ 丁内酯溶 劑。又,本發明之目的在於提供使用該組合物而於基板上 形成硬化起伏圖案之方法、及具有該硬化起伏圖案而成之 半導體裝置。 [解決問題之技術手段] 本發明者等人為了解決上述課題,而對藉由不含函原子 之大篁酚性二胺與芳香族二羧酸之去除水縮合物所衍生之 含盼性經基之聚醯胺(ΡΒΟ前驅物)進行研究。其結果發 136993.doc -12- 200940601 現’具有特定結構之樹脂可溶於γ- 丁内酯,對水銀燈之i線 的透明性較高,與PAC之相互作用亦足夠強,具有高敏感 度;從而可獲得於鹼溶性樹脂分子内不含齒原子之正型感 光性樹脂組合物。對使用有該鹼溶性樹脂之正型感光性樹 脂組合物進行研究,結果完成本發明。A positive photosensitive resin composition containing a solvent-soluble polyimine containing a phenolic hydroxyl group and a PAC containing no halogen atom in the molecule has been proposed (hereinafter referred to as Patent Document 3). Patent Document 3 describes a polymer having a tetrarubic acid containing a bicyclo(2,2,2)-oct-7-ene-2,3,5,6-tetradecanoic acid dianhydride. a polycondensate of a structure obtained by dehydration condensation of an anhydride with an aromatic diamine containing bis(3.amino)-4-hydroxyphenyl)sulfone, in the case of obtaining a polycondensate, combining all tetracarboxylic dianhydrides with In all the raw material monomers obtained from all the aromatic diamines, the bis(3-amino-4-phenylphenyl) group is in the range of 2 〇 mol% to 40 mol% when the raw material is added to obtain a polycondensation. The ratio of the molar number of all tetracarboxylic dianhydrides to the molar number of all aromatic diamines is 1: 〇75~〇87 or 0.75~0.87:1, and the weight average molecular weight of the polycondensate is at A range of 5,000 to 17,000. Patent Document 3 discloses a positive photosensitive resin composition containing no halogen atom by using bis(3-amino-4-phenylphenyl)anthracene in a phenolic diamine. The molecule does not contain a tooth atom and exhibits the interaction between alkali solubility and PAC. By using bicyclo(2,2,2)-octyl-7-ene 2,3'5,6-tetracarboxylic acid di-hepatic, the γ is increased. - solubility of vinegar and i-line transparency 'by controlling the amount of bis(3.amino phenyl phenyl) and the weight average molecular weight' is controlled by bis(3_amino-o-phenyl) The hard base is 'cohesive' and the positive photosensitive resin composition is soluble in γ· 丁, which is sufficiently transparent to the 1 line and can be patterned with a 2.38% TMΑΗ developing solution. However, the introduction amount of bis-amino-4 phenylidene phenyl stone is limited by the height of the solution of 136993.doc 200940601, so the density of the (4) warp group in the polymer decreases. The (3.Amino-4)-phenylphenyl) hard hetero group has a weak interaction with pAc, and therefore a positive photosensitive resin composition having higher sensitivity is desired. In the following Patent Document 4, it is disclosed that an alicyclic dibasic acid and a diamine are included; a PBO precursor, as a preferred second (four), is described as a cyclohexanol acid, which is disclosed in Example 3. There is a positive photosensitive resin composition n-form which is obtained by dissolving a polycondensate containing no tooth atoms in a molecule in N_methyl_2_対, in 2, 2 bis (3_amino group _ 4_ The condensate of the benzoyl fine and the cyclohexanal acid, the polycondensate is insoluble in the γ-butane vinegar, and 'cannot sufficiently satisfy the positive photosensitive resin composition degree. ' ❹ - other than this 'As a precursor to the use of an alicyclic dicarboxylic acid, the following Patent Documents 5 to 7 are not disclosed, but it is generally considered that the following polymer has not been provided, that is, it does not contain a tooth atom in the molecule, and is dissolved in γ_ Internal vinegar, and the photosensitive resin composition thereof has high sensitivity, and has a wide film thickness at the same exposure amount and the same development time. 2 $ In the following Patent Document 8, it is disclosed that The heat-resistance of the tricyclic ring from the structure of the money structure is disclosed in Patent Document 9 below, which discloses that it is a gas barrier film. In the field of a polybenzoxazole resin having a tricyclodecane structure, and in the following patent document, a compound containing an acid generated by a ruthenium precursor resin and radiation is disclosed, and A negative-type photosensitive resin composition of the compound which cross-links by the action of the acid. 136993.doc 200940601 [Patent Document 1] Japanese Patent Laid-Open Publication No. JP-A No. 119-426 [Patent Document 3] International Publication No. 7/〇29614 [Patent Document 4] Japanese Patent Laid-Open Publication No. Hei 2 No. Hei. No. Hei. Japanese Patent Laid-Open Publication No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. No. Hei. [Patent Document 9] Japanese Patent No. 3966590 (Patent Document 10) [Problems to be Solved by the Invention] An object of the present invention is to provide an alkali-soluble resin as Photosensitive resin composition When there is no tooth atom, the film thickness is wide at the same exposure amount and the same development time, and the film thickness is wide, and the sensitivity is high, and the developing solution generally used in the manufacturing process of the semiconductor device can be used (2·38). Weight: tetramethylammonium hydroxide aqueous solution) to form a pattern, soluble in γ-butyrolactone solvent. Further, it is an object of the present invention to provide a method for forming a hardened relief pattern on a substrate using the composition, and having the hardening A semiconductor device in which a undulating pattern is formed. [Technical means for solving the problem] In order to solve the above problems, the inventors of the present invention condensed water by removing water from a phenolic diamine containing no atom and an aromatic dicarboxylic acid. The polyamines (ruthenium precursors) containing the desired transradicals were studied. The result is 136993.doc -12- 200940601 The resin with specific structure is soluble in γ-butyrolactone, which has high transparency to the i-line of mercury lamp, and the interaction with PAC is strong enough and has high sensitivity. Therefore, a positive photosensitive resin composition containing no tooth atoms in the alkali-soluble resin molecule can be obtained. The positive photosensitive resin composition using the alkali-soluble resin was studied, and as a result, the present invention was completed.

進而’將藉由照射活性光線而產生酸之化合物及藉由酸 之作用可交聯之化合物與本發明之樹脂加以組合而進行研 究’結果亦可獲得解決上述課題之負型感光性樹脂組合 物’從而完成本發明。 即,本發明具體而言如下所述。 [1] 一種樹脂,其於分子内具有以下述通式(1)所表示之 結構: [化1]Further, 'the compound which generates an acid by irradiation with active light and the compound which can be crosslinked by the action of an acid are combined with the resin of the present invention to carry out a study. As a result, a negative photosensitive resin composition which solves the above problems can also be obtained. 'Therefore completing the invention. That is, the present invention is specifically as follows. [1] A resin having a structure represented by the following formula (1) in a molecule: [Chemical Formula 1]

Ο II i?Ο II i?

OHOH

HN-Xi-NH—C—Zi-C— OHHN-Xi-NH-C-Zi-C- OH

CD {式中,X,表示不含鹵原子之4價有機基,並且z〗表示以下 述通式(2)所表示之2價有機基: [化2]In the formula {wherein, X represents a tetravalent organic group which does not contain a halogen atom, and z represents a divalent organic group represented by the following formula (2): [Chemical 2]

(式中’ Li、L2及L3分別獨立表示氫原子或曱基,並且[表 136993.doc •13- 200940601 示氫原子、甲基或羥基)}。 [2]—種樹脂,其於分子内具有以下述通式(3)所表示之 結構: [化3](In the formula, 'Li, L2 and L3 each independently represent a hydrogen atom or a fluorenyl group, and [Table 136993.doc • 13-200940601 shows a hydrogen atom, a methyl group or a hydroxyl group)}. [2] A resin having a structure represented by the following formula (3) in a molecule: [Chemical 3]

(ε) {式中,乂1及乂2表示不含鹵原子之4價有機基,可分別相同 亦可不同,心表示以下述通式(2)所表示之2價有機基: [化4](ε) {wherein, 乂1 and 乂2 represent a tetravalent organic group which does not contain a halogen atom, and may be the same or different, and the core represents a divalent organic group represented by the following general formula (2): ]

136993.doc -14- 200940601 (式中,L,、L2及L3分別獨立表示氫原子或曱基,並且^表 示氫原子、甲基或羥基),&表示具有芳香環之不含卣原 子之2價有機基,mi表示^200之整數,&表示不含齒原子 之2〜4價之有機基,&表示不含鹵原子之4價有機基,叱及 叫分別獨立表示〇〜200之整數,叫表示〇〜2之整數叫為 〇〜1之整數,並且mi、叫及叫個之各單元之排列順序不受 限制}。 m如上述π]或[2]之樹脂,其具有以下述通式⑷所表示 之結構: [化5]136993.doc -14- 200940601 (wherein, L, L2 and L3 each independently represent a hydrogen atom or a fluorenyl group, and ^ represents a hydrogen atom, a methyl group or a hydroxyl group), and & represents a non-purine atom having an aromatic ring. A divalent organic group, mi represents an integer of ^200, & represents an organic group having a 2 to 4 valence of a tooth atom, & represents a tetravalent organic group which does not contain a halogen atom, and 叱 and 叫 respectively represent 〇~200 The integer is called an integer representing 〇~2 and is called an integer of 〇~1, and the arrangement order of each unit of mi, calling, and calling is not limited}. m is a resin of the above π] or [2] which has a structure represented by the following formula (4): [Chemical 5]

{式中RjR277別獨立為選自由氫原子、碳數為1〜6之 ❹L:T取代之苯環所組成之群中的-種基,r— 基}〇。 iR3及R4分別獨立為氫原子或碳數為1〜4之有機 之 =上述⑴或[2]_旨,其具㈣下述⑽所表示 、系吉· [化6]In the formula, RjR277 is independently a group selected from the group consisting of a hydrogen atom and a benzene ring in which 碳L:T is substituted with a carbon number of 1 to 6, and r-group}〇. iR3 and R4 are each independently a hydrogen atom or an organic group having a carbon number of 1 to 4 = (1) or [2], which is represented by the following (10), and is represented by

~Q〇i 136993.doc •15· (5) 200940601 [5]如上述Π]或[2]之樹脂 結構: [化7] 其具有以下述式(6)所表示之~Q〇i 136993.doc •15· (5) 200940601 [5] Resin structure as described above] or [2]: [Chemical 7] It has the formula (6)

[6]如上述[1]或[2]之樹脂,其具有以下述式(7)所表示之 結構: [化8][6] The resin according to the above [1] or [2], which has a structure represented by the following formula (7): [Chem. 8]

[7]如上述[η或[2]之樹脂,其具有以下述式(8)所表示之[7] The resin of [n or [2] above, which has a formula represented by the following formula (8)

結構: [化9]Structure: [Chemistry 9]

以卞述式(9)所表示之 [8]如上述[η或之樹脂,其具有 結構: 136993.doc -16- 200940601 [化 ίο][8] as described in the above formula (9) as described above [η or the resin, which has the structure: 136993.doc -16- 200940601 [化 ίο]

[9]如上述[丨]或[2]之樹脂 之結構: 其具有以下述式(10)所表示 [化 11] ❹[9] The structure of the resin of the above [丨] or [2]: which has the formula (10): [Chemical Formula 11] ❹

—NH-HO (10) {式中,R係碳數為1〜4之一價有機基}。 [10]如上述[1]或[2]之樹脂,其具有以下述式(11)所表示 之結構: [化 12]—NH-HO (10) {wherein, the R-based carbon number is 1 to 4 one-valent organic group}. [10] The resin according to the above [1] or [2], which has a structure represented by the following formula (11): [Chem. 12]

[11]如上述[1]或[2]之樹脂,其具有以下述式(12)所表示 之結構: [化 13][11] The resin according to the above [1] or [2], which has a structure represented by the following formula (12): [Chem. 13]

(1 2) 〇 136993.doc -17· 200940601 [12]如上述Π]或[2]之樹脂 之結構: 其具有以下述式(13)所表示 [化 14](1 2) 〇 136993.doc -17· 200940601 [12] The structure of the resin of the above Π] or [2]: which has the following formula (13) [Chem. 14]

ΟΗ (1 3) 〇 ❹ [13]如上述[2]之樹脂’其中上述通式(3)中之Z2#選自由 下述結構式⑽所組成之群中的至少i種結構: [化 15]ΟΗ (1 3) 〇❹ [13] The resin of the above [2] wherein Z2# in the above formula (3) is at least one selected from the group consisting of the following structural formula (10): ]

{式中,L5係選自以下有機基之丨價基: [化 16]In the formula, L5 is selected from the following valence groups of organic groups: [Chem. 16]

(式中,L6表示碳數為1〜4之1價烷基)}。 [14]如上述[2]之樹脂,其中上述通式(3)中之含聚醯亞胺 基之單tl部具有選自由下述式(15)及下述式(16)所組成之 群中的至少1種結構: 136993.doc 200940601 [化 17](wherein, L6 represents a monovalent alkyl group having a carbon number of 1 to 4)}. [14] The resin according to the above [2], wherein the mono-l-containing moiety containing the polyamidino group in the above formula (3) has a group selected from the group consisting of the following formula (15) and the following formula (16) At least one structure in the middle: 136993.doc 200940601 [Chem. 17]

❹ [15]如上述[1]至[14]中任一 係選自由下述結構所組成之群 [化 18] 項之樹脂,其中樹脂之末端 中的至少1種末端基··[15] The resin according to any one of the above [1] to [14], which is selected from the group consisting of the following structures, wherein at least one terminal group of the terminal of the resin is

[16] —種正型感光性樹脂組合物,其相對於ι〇〇質量份 之⑷含有如上述⑴至[15]中任一項之樹脂之鹼溶性樹 脂,含有1〜100質量份之(B)感光性重氮萘醌化合物。 [17] 如上述[16]之正型感光性樹脂組合物,其進一步含 有100〜2000質量份之(C)有機溶劑。 [18] 如上述[16]或[17]之正型感光性樹脂組合物,其中 (B)感光性重氮萘醌化合物係選自由以下述通式〇 7)所表示 之聚羥基化合物之1,2-萘醌二疊氮基-4-磺酸酯、及該聚羥 136993.doc •19- 200940601 基化合物之1,2-萘醌二疊氮基_5_橫酸酯所組成之群中的至 少一種化合物: [化 19] Ο[16] A positive-type photosensitive resin composition containing the alkali-soluble resin of the resin according to any one of the above (1) to [15], which contains 1 to 100 parts by mass of (4). B) Photosensitive diazonaphthoquinone compounds. [17] The positive photosensitive resin composition of the above [16], which further contains 100 to 2000 parts by mass of the (C) organic solvent. [18] The positive photosensitive resin composition according to the above [16] or [17] wherein (B) the photosensitive diazonaphthoquinone compound is selected from the group consisting of polyhydroxy compounds represented by the following formula: 7) , 2-naphthoquinonediazide-4-sulfonate, and the group consisting of 1,2-naphthoquinonediazide-5-ylidetate of the compound 136993.doc •19-200940601 base compound At least one compound: [Chem. 19] Ο

CH3—宁 _CH3 φ OH (”)。 [19] 如上述[17]之正型感光性樹脂組合物,其中(c)有機 溶劑為γ- 丁内酯。 [20] 如上述[16]至[19]中任一項之正型感光性樹脂組合 物’其進一步含有0.01〜20質量份之(D)烷氧基矽烷化合 物。 [21] 如上述[20]之正型感光性樹脂組合物,其中(D)燒氧 〇 基矽烷化合物係選自由以下述通式(18)〜(25)所表示之化合 物所組成之群中的至少一種化合物: [化 20][19] The positive photosensitive resin composition of the above [17], wherein (c) the organic solvent is γ-butyrolactone. [20] as described in [16] above. The positive photosensitive resin composition of any one of [19] further contains 0.01 to 20 parts by mass of the (D) alkoxydecane compound. [21] The positive photosensitive resin composition of the above [20] Wherein (D) the pyrithione decane compound is at least one compound selected from the group consisting of compounds represented by the following general formulae (18) to (25): [Chem. 20]

H〇_U (18) {式中,X 並且s表示 1及X2表示2價有機基, 0〜2之整數}; X3及X4表示1價有機基 136993.doc • 20- (19) 200940601 [化 21] (x5)s η οH〇_U (18) {wherein, X and s represent 1 and X2 represents a divalent organic group, an integer of 0 to 2}; X3 and X4 represent a monovalent organic group 136993.doc • 20- (19) 200940601 [ 21] (x5)s η ο

(X6-0)3.s-Si-X7-N-C^x/COOH HOOC^ Ν—X9-S1—(Ο—Xu)3-5 〇 Η (X,〇)s {式中,Χ7&Χ9表示2價有機基,Χ8表示4價有機基,Χ5、 Χ6、Χίο及Χιι表不1價有機基,並且s表不0~2之整數}; [化 22] Γ^Ί(X6-0)3.s-Si-X7-NC^x/COOH HOOC^ Ν—X9-S1—(Ο—Xu)3-5 〇Η (X,〇)s { where Χ7&Χ9 indicates A divalent organic group, Χ8 represents a tetravalent organic group, Χ5, Χ6, Χίο, and Χιι are not monovalent organic groups, and s represents an integer of 0 to 2}; [Chem. 22] Γ^Ί

(Χΐ2)Γ·_ 4_ΝΗ—Χ)3—Si—(O—Xi5)3-S ^ k)s (20) {式中,Xi3表示2價有機基,X12、X14&X15表示1價有機 基,s表示0〜2之整數,並且t表示0〜5之整數}; [化 23] Ο Η(Χΐ2)Γ·_ 4_ΝΗ—Χ)3—Si—(O—Xi5)3-S ^ k)s (20) where, Xi3 represents a divalent organic group, and X12, X14&X15 represents a monovalent organic group. , s represents an integer of 0 to 2, and t represents an integer of 0 to 5}; [Chem. 23] Ο Η

Xi6_C—N—Xj7—Si—(OX】9)3-s (2 1 ) (Xl8)sXi6_C—N—Xj7—Si—(OX)9)3-s (2 1 ) (Xl8)s

{式中,X〗6表不-NH-R20或-〇-Κ·21(此處,Κ·20與R2 1係不含 COOH基之1價有機基);Χ17表示2價有機基,又18及乂19表示 1價有機基,並且s表示0〜2之整數}; [化 24] (2 2) HS— Χ22—Si—(〇X24)3-s (X23)s {式中,x22表示2價有機基,X23及X24表示1價有機基,並 且s表示0〜2之整數}; 136993.doc -21 - 200940601 [化 25] H2N—C—NH—X25—Si—(0X27)3.5 〇 (X26)s (2 3) {式中,X25表示2價有機基,X26及X27表示1價有機基,並 且s表示0〜2之整數}; [化 26]{wherein, X〗 6 indicates -NH-R20 or -〇-Κ·21 (here, Κ·20 and R2 1 are monovalent organic groups which do not contain COOH groups); Χ17 indicates a divalent organic group, 18 and 乂19 represent a monovalent organic group, and s represents an integer of 0 to 2}; [Chem. 24] (2 2) HS—Χ22—Si—(〇X24)3-s (X23)s {wherein, x22 Indicates a divalent organic group, X23 and X24 represent a monovalent organic group, and s represents an integer of 0 to 2}; 136993.doc -21 - 200940601 [Chem. 25] H2N-C-NH-X25-Si-(0X27)3.5 〇(X26)s (2 3) {wherein, X25 represents a divalent organic group, X26 and X27 represent a monovalent organic group, and s represents an integer of 0 to 2}; [Chem. 26]

X29— X30—Si—(0X32)3^X29—X30—Si—(0X32)3^

(X3l)s (24) {式中,x28表示氫原子或甲基,X29係選自下述式群之2價 基: [化 27](X3l)s (24) wherein x28 represents a hydrogen atom or a methyl group, and X29 is selected from a divalent group of the following formula: [Chem. 27]

-ch2- 0 II S〇2-ch2- 0 II S〇2

ο 11 -〇—C_ΝΗ - Ο IIο 11 -〇—C_ΝΗ - Ο II

ο II -C-NH-Ο II -NH一C—NH— Ο II —c一 ο— •ΝΗ—C—Ό--C— •Ο—C— —C— —NH—C CH3ο II -C-NH-Ο II -NH - C - NH - Ο II - c - ο - • ΝΗ - C - Ό - C - • Ο - C - C - NH - C CH3

;X3G表不2價有機基’ X31及X32表示1價有機基,s表示0〜2 之整數,並且U表示1〜3之整數};及 [化 28]X3G represents no divalent organic group 'X31 and X32 represent a monovalent organic group, s represents an integer of 0 to 2, and U represents an integer of 1 to 3}; and [Chem. 28]

\ J- 乂33— ^34—Si—(OX36)3-S (2 5) (X35)s {式中,X33及X34表示2價有機基,X35及X36表示1價有機 基,並且s表示0〜2之整數}。 136993.doc •22- 200940601 [22] 如上述[16]至[21]中任一項之正型感光性樹脂組合 物,其進一步含有5〜20質量份之(E)藉由熱而引起交聯反 應之化合物。 [23] 如上述[22]之正型感光性樹脂組合物,其中(e)藉由 熱而引起熱父聯反應之化合物係選自由具有環氧基、經曱 基、烷氧基甲基或氧雜環丁基之化合物、及雙烯丙基二醯 亞胺化合物所組成之群中的至少一種者。 P4]如上述[16]至[23]中任一項之正型感光性樹脂組合 ® 物,其進一步含有1〜30質量份之選自由(F)丙烯酸酯化合 物、甲基丙烯酸酯化合物、含烯丙基之化合物、含甲氧基 之化合物、及苯酯化合物所組成之群中的至少丨種者。 [25] 如上述[16]至[24]中任一項之正型感光性樹脂組合 物,其進一步含有1〜30質量份之(G)於分子内具有羧基之 有機化合物。 [26] —種硬化起伏圖案之形成方法,其包括:將如上述 φ [16]至[25]中任一項之正型感光性樹脂組合物塗布於基板 上之塗布步驟、對該層進行曝光之曝光步驟、利用顯影液 將曝光邠/谷出除去之顯影步驟、及對所得之起伏圖案進行 加熱之加熱步驟。 [27] —種半導體裝置,其係具有藉由如上述[26]之形成 方法所獲得之硬化起伏圖案而成者。 [28] 一種負型感光性樹脂組合物,其包含:1〇〇質量份 之(A)含有如上述⑴至[15]中任一項之樹脂之鹼溶性樹 脂、0.5〜30質量份之(H)藉由照射活性光線而產生酸之化合 136993.doc -23- 200940601 物、及5〜50質量份之⑴藉由酸之作用可交聯之化合物。 [29]如上述[28]之負型感光性樹脂組合物,其中⑴藉由 酸之作用可交聯之化合物係於分子内具有羥甲基或烷氧基 甲基之化合物。 [3〇]—種硬化起伏圖案之形成方法,其包括:將如上述 [28]或[29]之負型感光性樹脂組合物塗布於基板上之塗布 步驟、對該層進行曝光之曝光步驟、曝光後進行加熱之步 驟、利用顯影液將未曝光部溶出除去之顯影步驟、及對所 〇 得之起伏圖案進行加熱之加熱步驟。 [31] 一種半導體裝置,其係具有藉由如上述[30]之形成 方法所得之硬化起伏圖案而成者。 [發明之效果] 藉由本發明,可提供一種鹼溶性樹脂,其於分子内不含 鹵原子,作為感光性樹脂組合物時,具有高敏感度,以相 同曝光量、相同顯影時間形成圖案之情形的膜厚邊際較 冑’可藉由半導趙裝置之製造步驟中通常所使用之顯影液 (2.38重量%四甲基氫氧化鍵水溶液)而形成圖帛,且可溶 於T-丁内醋溶劑。又,藉由本發明,亦可提供該組合物办 使用該組合物而於基板上形成硬化起伏圖案之方法及具 有該硬化起伏圖案而成之半導體裝置。 、 【實施方式】 首先’對本發明之樹脂(a)加以說明。 本發明之樹脂(a)係於分子内具有以下述通式所表示 之結構之樹月旨: 136993.doc •24· 200940601 [化 29]\ J- 乂33—^34—Si—(OX36)3-S (2 5) (X35)s {wherein, X33 and X34 represent a divalent organic group, X35 and X36 represent a monovalent organic group, and s represents An integer of 0 to 2}. The positive photosensitive resin composition of any one of the above [16] to [21] further containing 5 to 20 parts by mass of (E) by heat a compound that reacts. [23] The positive photosensitive resin composition according to [22] above, wherein (e) the compound which causes a thermal father reaction by heat is selected from the group consisting of an epoxy group, a mercapto group, an alkoxymethyl group or At least one of a group consisting of a compound of oxetanyl and a bisallyl diimide compound. The positive photosensitive resin composition of any one of the above [16] to [23] further containing 1 to 30 parts by mass selected from the group consisting of (F) acrylate compound, methacrylate compound, and At least a seed of the group consisting of an allyl compound, a methoxy group-containing compound, and a phenyl ester compound. [25] The positive photosensitive resin composition according to any one of the above [16] to [24] further comprising 1 to 30 parts by mass of (G) an organic compound having a carboxyl group in the molecule. [26] A method of forming a hardening undulation pattern, comprising: applying a coating method of applying a positive photosensitive resin composition according to any one of φ [16] to [25] on a substrate, and performing the coating on the layer The exposure step of exposure, the development step of removing the exposure enthalpy/valley by the developer, and the heating step of heating the resulting undulation pattern. [27] A semiconductor device comprising a hardened relief pattern obtained by the method of forming [26] above. [A] a negative-type photosensitive resin composition comprising: (1) an alkali-soluble resin containing the resin of any one of the above (1) to [15], in an amount of 0.5 to 30 parts by mass ( H) A compound which can be crosslinked by the action of an acid by illuminating the active light to produce a compound of 136993.doc -23- 200940601 and 5 to 50 parts by mass of (1). [29] The negative photosensitive resin composition according to the above [28], wherein (1) the compound crosslinkable by the action of an acid is a compound having a methylol group or an alkoxymethyl group in the molecule. [3〇] A method of forming a hardening undulation pattern, comprising: a coating step of applying a negative photosensitive resin composition of the above [28] or [29] onto a substrate, and an exposure step of exposing the layer And a step of heating after the exposure, a developing step of eluting and removing the unexposed portion by the developing solution, and a heating step of heating the obtained undulating pattern. [31] A semiconductor device comprising a hardened relief pattern obtained by the method of forming [30] above. [Effects of the Invention] According to the present invention, it is possible to provide an alkali-soluble resin which does not contain a halogen atom in the molecule, and which has high sensitivity as a photosensitive resin composition, and forms a pattern with the same exposure amount and the same development time. The film thickness margin can be formed by the developer (2.38 wt% tetramethyl hydroxide aqueous solution) commonly used in the manufacturing process of the semiconductor device, and is soluble in T-butyl vinegar. Solvent. Further, according to the present invention, a method of forming a hardened relief pattern on a substrate using the composition and a semiconductor device having the hardened relief pattern can be provided. [Embodiment] First, the resin (a) of the present invention will be described. The resin (a) of the present invention is a tree having a structure represented by the following formula in the molecule: 136993.doc •24· 200940601 [Chem. 29]

-hn4Hn C—Zj-C 〇H-hn4Hn C—Zj-C 〇H

Ο IIΟ II

ο II {式中,Χα _ ⑴ 述通式(2)所| 有機基,並且4表示以下 )所表示之2價有機基: [化 3〇] ❹ο II {wherein, Χα _ (1) The organic group of the formula (2), and 4 represents the following divalent organic group: [Chemical 3〇] ❹

(2) ❹ (式二,Ll、此分別獨立表示氫原子或甲基,並且“表 π虱原子 '甲基或羥基)}。較 重複單元。 ^上迷通式⑴之結構為 =單本發:之樹脂⑷可具有溶劑可溶性之含經基之聚 亞胺單凡’亦可具有以下述通式(3)所表示之之價有機 醯基: 136993.doc •25· 200940601 [化 3 1 ](2) ❹ (Formula 2, Ll, which independently represents a hydrogen atom or a methyl group, and "Table π 虱 atom 'methyl or hydroxy)}. More repeating units. ^ The structure of the general formula (1) = single The resin (4) may have a solvent-soluble transbasic polyimine mono-' which may also have an organic thiol group represented by the following formula (3): 136993.doc •25· 200940601 [Chemical 3 1 ]

{式中{式

同,亦ΰ^1及&表示不含鹵原子之4價有機基,可分別相 Γ不同 ,Ζ,表示以下述通式(2)所表示之結構 [化 32]Similarly, ΰ^1 and & represents a tetravalent organic group which does not contain a halogen atom, and may be different from each other, and represents a structure represented by the following formula (2).

(式中,Μ、1^及乙3分別獨立表示氫原子或甲基,並且^表 不氨原子、尹基或羥基),·&表示具有芳香環之 子之2價有機基,叫表示1〜2〇〇之整數,&表示不3 _原 $含義原子 136993.doc -26- 200940601 之2~4價有機基’ &表示不含齒原子之4價有機基,奶及叫 分別獨立表示0〜2〇〇之整數,叫表示〇〜2之整數,叫為 0〜1 ’此處’ 、ms、及叫個之各單元之排列順序不受限 制}。 以上述通式(2)所表示之有機基進而較好的是選自下述 化合物群(a-1)之至少1者: [化 33] 化合物群(a-1)(wherein, Μ, 1^ and B3 each independently represent a hydrogen atom or a methyl group, and ^ represents an ammonia atom, an yinyl group or a hydroxy group), and & represents a divalent organic group having an aromatic ring, and is represented by 1 An integer of ~2〇〇, & indicates not 3 _ original $ meaning atom 136993.doc -26- 200940601 2~4 organic group ' & represents a 4-valent organic group without tooth atom, milk and called independent An integer representing 0~2〇〇, called an integer representing 〇~2, is called 0~1 'here', ms, and the order of each unit is not limited}. The organic group represented by the above formula (2) is further preferably at least one selected from the group consisting of the following compound groups (a-1): [Chem. 33] Compound group (a-1)

❹ 於該等之中,尤其是下述化合物更好: [化 34] 〇 以下,對本發明之樹脂(a)加以詳細說明。 為了獲得樹脂(a),可將具有上述通式(2)結構之二羧 酸、及具有X!結構與酚性羥基之二胺作為原料。 作為具有上述通式(2)結構之二羧酸之代表性化合物, 可列舉雙(羧基)三環[mo2,6]癸烷。該化合物可根據日 136993.doc -27- 200940601 本專利特開昭58-H0538號之製造例A之合成方法曰本專 利特表2002-504891號之實施例丨之合成方法、曰本專利特 開平09-15846號公報之合成例2之合成方法而獲得。然 而,由於該方法使用重金屬作為氧化劑,因此於不使用= 金屬方面下述製法更為理想。即,將三環(m,。)癸烷二 甲醇(東厅、化成工業公司製造目錄N〇 τ〇85〇)溶解於乙腈 等中,添加2,2,6,6-四曱基哌啶氧自由基(以下亦稱為 「TEMPO」)等觸媒,一面使用磷酸氫二鈉、磷酸二氫鈉 ® 等調整pH,一面添加亞氣酸鈉、二亞氣酸鈉進行氧化、純 化’藉此可製造目標之化合物、即雙(竣基)=環 [5,2,1,〇2,6]癸烷。 又’關於上述化合物以外之其他具有上述結構群(a)之結 構之二羧酸化合物,以甲基環戊二烯二聚物(東京化成工 業公司製造目錄No. M0920)、1-曱基二環戊二烯(東京化 成工業公司製造目錄No_ M〇910)、1-經基二環戊二婦(東 不化成工業公司製造目錄No. H0684)為原料,藉由在j. Ο 〇rg. Chem” 45,3527 (1980)中所知之方法,於上述原料之 不飽和鍵部位加成溴化氫或氯化氫,然後根據在j Am. Chem. Soc.,95,249 (1973)中所知之方法,進一步加成一 氧化碳、水,藉此可於三環[5,2,1,02勹癸烷之骨架中導入2 個經甲基。作為合成二羥甲基體之方法,除此以外,藉由 在 J· Am. Chem· Soc.,91,2150 (1969)中所知之方法,於不 飽和鍵部位加成9-硼二環(3,3,1)壬烷’形成中間物後,使 其與一氧化碳進行反應,以LiALH(OCH3)3進行還原,藉 136993.doc -28- 200940601 此亦可製造二羥甲基鱧。根據獲得雙(羧基)三環 [5,2,1,〇 ’6]癸烷時對如此所得之二羥曱基體加以說明之方 法,同樣地使二羥甲基氧化,藉此可獲得目標之二羧酸。 除了具有乙1結構之二羧酸,以提高機械伸長率、提高破 璃轉移溫度等調整機械物性為目的,亦可使具有&結構之 二叛酸共聚合。作為具有z2結構之二㈣’可列舉具有芳 香環之不含齒原子之2價有機基,較好的是選自由碳數為 8〜36之芳香族二羧酸、及碳數為6〜34之脂環式二羧酸所組 © 成之群中的至少1種化合物。 具體可列舉例如:間苯二曱酸、對苯二甲酸、4,4·_聯苯 二甲酸、3,4,-聯苯二甲酸、3,3,_聯苯二甲酸、Μ_萘二甲 酸、2’3-萘二甲酸、1>5•萘二甲酸、2,6_萘二甲酸、μ,·磺 醯基雙苯甲酸、3,4,_磺醯基雙苯曱酸、3,3,_磺醯基雙苯甲 酸、4,4’-氧雙苯曱酸、3,4,_氧雙苯甲酸、3,3,-氧雙苯甲 酸、2,2-雙(4-羧基苯基)丙烷、2,2_雙(3_羧基苯基)丙烷、 ❹ 2’2’·二曱基聯苯二甲酸、3,3,_二甲基_4,4,_聯苯二甲 酸2,2·—甲基-3,3'-聯苯二曱酸、9,9-雙(4-(4-叛基苯氧 基)苯基)苐、9,9-雙(4-(3-羧基苯氧基)苯基)苐、4,4,_雙(4_ 羧基苯氧基)聯苯、4,4ι_雙(3_羧基苯氧基)聯苯、3,4,_雙 羧基苯氧基)聯苯、3,4'-雙(3-羧基笨氧基)聯苯、3,3,_雙(4_ 羧基苯氧基)聯苯、3,3,-雙(3-羧基苯氧基)聯苯、4,4,_雙(4_ 羧基苯氧基)·對聯三苯、4,4ι·雙(4_羧基苯氧基)·間聯三 本3’4 -雙(4-叛基苯氧基)_對聯三苯、3,3'_雙(4-叛基苯氧 基)-對聯三苯、3,4,-雙(4-羧基苯氧基)-間聯三苯、3,3,_雙 136993.doc •29· 200940601 (4-羧基苯氧基)·間聯三苯、4,4,-雙(3-羧基苯氧基對聯三 苯、4,4’-雙(3-缓基苯氧基)_間聯三苯、3,4,_雙(3叛基苯氧 基)-對聯三笨、3,3··雙(3-羧基苯氧基)_對聯三苯、3,4,_雙 (3-羧基苯氧基)-間聯三苯、3,3·_雙(3_羧基苯氧基)_間聯三 苯、Μ-環丁烷二甲酸、1,4-環己烷二甲酸、^-環己烷二 甲酸、4,4’-二苯甲酮二甲酸、丨,3_伸苯基二乙酸、μ•伸苯 基二乙酸、國際公開第05/068535號小冊子中之5•胺基間苯 二甲酸衍生物。 © 於該等之中,製成感光性樹脂組合物之情形時,就對 7 - 丁内酯之溶解性、對稀鹼性水溶液之溶解性而言,較 好的是以下述通式(14)所表示之化合物: [化 35]Among these, especially the following compounds are more preferable: The resin (a) of the present invention will be described in detail below. In order to obtain the resin (a), a dicarboxylic acid having the structure of the above formula (2) and a diamine having a X! structure and a phenolic hydroxyl group can be used as a raw material. As a representative compound of the dicarboxylic acid having the structure of the above formula (2), bis(carboxy)tricyclo[mo2,6]nonane can be mentioned. The compound can be synthesized according to the synthesis method of the production example A of Japanese Patent Laid-Open Publication No. SHO-58-H0538, No. Sho-58-H0538, and the synthesis method of the embodiment of the patent specification No. 2002-504891. Obtained by the synthesis method of Synthesis Example 2 of the publication No. 09-15846. However, since this method uses heavy metals as the oxidizing agent, the following method is more preferable in that the metal is not used. In other words, a tricyclic (m,.) decane dimethanol (manufactured by Dongjo, Chemical Industry Co., Ltd. N〇τ〇85〇) was dissolved in acetonitrile or the like, and 2,2,6,6-tetradecylpiperidine was added. The catalyst such as oxygen free radical (hereinafter also referred to as "TEMPO") is adjusted to pH by using disodium hydrogen phosphate or sodium dihydrogen phosphate, and is added with sodium sulfite and sodium disulfite for oxidation and purification. This makes it possible to produce the target compound, namely bis(indenyl)=cyclo[5,2,1,〇2,6]decane. Further, the dicarboxylic acid compound having the structure of the above structural group (a) other than the above compound, methylcyclopentadiene dimer (manufactured by Tokyo Chemical Industry Co., Ltd. No. M0920), 1-meryl group II Cyclopentadiene (manufactured by Tokyo Chemical Industry Co., Ltd. No. M〇910), 1-diyldicyclopentanyl (manufactured by Dongbu Chemical Industry Co., Ltd. No. H0684) as raw materials, by j. Ο 〇rg. A method known from Chem. 45, 3527 (1980), which adds hydrogen bromide or hydrogen chloride to the unsaturated bond of the above starting material, and is then known from j Am. Chem. Soc., 95, 249 (1973). In this way, carbon monoxide and water are further added, whereby two methyl groups can be introduced into the skeleton of the tricyclo[5,2,1,02 decane. As a method for synthesizing the dimethylol group, An intermediate is formed by adding 9-borobicyclo(3,3,1)nonane to an unsaturated bond by a method known in J. Am. Chem. Soc., 91, 2150 (1969). Thereafter, it is reacted with carbon monoxide to be reduced with LiALH(OCH3)3, and dimethylolmethyl hydrazine can also be produced by 136993.doc -28-200940601. According to the method for obtaining the dihydroxyindole substrate thus obtained when bis(carboxy)tricyclo[5,2,1,〇'6]nonane is obtained, the dimethylol group is similarly oxidized, whereby the target can be obtained. Dicarboxylic acid. In addition to the dicarboxylic acid having the structure of B1, it is also possible to copolymerize the two-reactive acid having the & structure as a z2 structure for the purpose of improving the mechanical elongation and improving the mechanical properties of the glass transition temperature. The second (four)' may be a divalent organic group having a tooth atom without an aromatic ring, preferably an aromatic dicarboxylic acid having a carbon number of 8 to 36, and an alicyclic ring having a carbon number of 6 to 34. At least one compound of the group consisting of dicarboxylic acids, for example, isophthalic acid, terephthalic acid, 4,4·-diphenyl phthalate, 3,4,-biphenyl bis Formic acid, 3,3,-diphenyl phthalic acid, Μ_naphthalene dicarboxylic acid, 2'3-naphthalene dicarboxylic acid, 1>5•naphthalene dicarboxylic acid, 2,6-naphthalenedicarboxylic acid, μ,·sulfonyl bisbenzene Formic acid, 3,4, sulfonyl bisbenzoic acid, 3,3, sulfonyl bisbenzoic acid, 4,4'-oxybisbenzoic acid, 3,4, oxybenzoic acid, 3, 3,-oxybisbenzoic acid, 2,2-double (4-carboxyphenyl)propane, 2,2-bis(3-carboxyphenyl)propane, 2'2'-dimercaptophthalic acid, 3,3,_dimethyl-4,4, _Diphenylphthalic acid 2,2·-methyl-3,3'-biphenyldicarboxylic acid, 9,9-bis(4-(4-reaphenoxy)phenyl)anthracene, 9,9- Bis(4-(3-carboxyphenoxy)phenyl)anthracene, 4,4,_bis(4-carboxyphenoxy)biphenyl, 4,4ι_bis(3-carboxyphenoxy)biphenyl, 3 , 4,-dicarboxyphenoxy)biphenyl, 3,4'-bis(3-carboxyphenyloxy)biphenyl, 3,3,_bis(4-carboxyphenoxy)biphenyl, 3,3, - bis(3-carboxyphenoxy)biphenyl, 4,4,_bis(4-carboxyphenoxy)·terotriphenyl, 4,4 ι·bis(4-carboxyphenoxy)·crosslink 3 '4-Bis(4-reoxyphenoxy)_para-triphenyl, 3,3'-bis(4-reoxyphenoxy)-para-triphenyl, 3,4,-bis(4-carboxyphenoxy Base)-m-triphenyl, 3,3,_double 136993.doc •29· 200940601 (4-carboxyphenoxy)·m-linked triphenyl, 4,4,-bis(3-carboxyphenoxy couplet III Benzene, 4,4'-bis(3-sulfophenoxy)-m-triphenyl, 3,4,_bis(3 retinophenoxy)-pair triple stupid, 3,3· Bis(3-carboxyphenoxy)_para-triphenyl, 3,4,-bis(3-carboxyphenoxy)-m-triphenyl, 3,3·-bis(3-carboxyphenoxy)_ Biphenyl, Μ-cyclobutane dicarboxylic acid, 1,4-cyclohexanedicarboxylic acid, ^-cyclohexanedicarboxylic acid, 4,4'-benzophenone dicarboxylic acid, hydrazine, 3_phenylene Acetic acid, μ•phenylenediacetic acid, 5·aminoisophthalic acid derivatives in the pamphlet of International Publication No. 05/068535. In the case where the photosensitive resin composition is prepared, the solubility in 7-butyrolactone and the solubility in a dilute alkaline aqueous solution are preferably in the following formula (14). ) the compound represented: [Chem. 35]

(式中’ Le表示碳數為丨“之丨價烷基)丨。 於製造本發明之樹脂(a)時,該等二羧酸可單獨使用,亦 136993.doc •30· 200940601 可組合2種以上使用。將芳香族二羧酸用於共聚之情形 時,水銀燈之i線穿透性顯著降低。因此,相對於具有& 釔構之一羧酸,具有Z2結構之二羧酸,在將具有結構之 二羧酸+具有Zz結構之二綾酸設為100莫耳時,具有A結構 之二羧酸較好的是10~100莫耳,具有Z2結構之二羧酸較好 的疋0〜90莫耳》尤其是Z2為芳香族二幾酸之情形時,就製 成樹脂時之i線穿透性之觀點而言,較好的是3〇莫耳以 下’更好的是10莫耳以下。 關於合成樹脂(a)時所使用之該等二羧酸,亦可使用亞硫 醯氣,於醯氣之狀態下進行使用。作為酿氣之合成法,具 體可列舉在N,N-二甲基甲醯胺、吡啶、氣化苄基三乙胺等 觸媒存在之條件下,使二羧酸與過剩量之亞硫醯氣進行反 應,對過剩之亞硫醯氣進行加熱及減壓,藉此餾去之方 法’可藉由利用己烷、甲苯等溶劑使該反應液之殘渣進行 再結晶而獲得。又,亦可於未純化之狀態下,用於樹脂之 聚合。又,亦可使用如下觸媒,即使用二環己基碳二亞胺 等脫水縮合劑,將二羧酸與N-羥基苯并三唑(以下亦稱為 「HOBT」)製成HOBT活性酯體之觸媒。 作為具有乂!結構與酚性羥基之二胺,可較好地使用: 2,2-雙(3-胺基-4-經基苯基)丙烧、2,2-雙(4-胺基-3-經基苯 基)丙烧、3,5 -二胺基-1-經基苯、4,6 -二胺基-i,3 -二經基 苯、3,3'-二羥基-4,4'-二胺基聯苯、4,4'-二羥基_3,3,-二胺 基聯苯、3,4-二羥基-3’,4’-二胺基聯苯、雙(3-胺基-4-羥基 苯基)砜、雙(3-胺基-4-羥基苯基)硫醚、雙(3-胺基-4-羥基 136993.doc -31- 200940601 苯基)甲貌、雙(4-胺基-3-羥基苯基)甲烧、雙(4-胺基-3-經 基苯基)硬、及下述化合物群: [化 37](wherein 'Le denotes a valence alkyl group having a carbon number of 丨". When the resin (a) of the present invention is produced, the dicarboxylic acids may be used singly, and 136993.doc • 30· 200940601 may be combined 2 When the aromatic dicarboxylic acid is used for copolymerization, the i-line permeability of the mercury lamp is remarkably lowered. Therefore, the dicarboxylic acid having the Z2 structure is compared with the carboxylic acid having a & When the dicarboxylic acid having a structure + the diterpene acid having a Zz structure is set to 100 mol, the dicarboxylic acid having an A structure is preferably 10 to 100 mol, and the dicarboxylic acid having a Z2 structure is preferably a ruthenium. 0 to 90 moles, especially when Z2 is an aromatic diacid, it is preferably 3 Å or less from the viewpoint of i-line permeability when the resin is formed. In the case of the synthetic resin (a), the dicarboxylic acid used in the synthesis of the resin (a) may be used in the presence of helium in the form of a sulphur gas. Dicarboxylic acid and excess amount of sulfoxide in the presence of a catalyst such as N-dimethylformamide, pyridine or vaporized benzyltriethylamine The reaction is carried out, and the excess sulfite gas is heated and depressurized, and the method of distilling off can be obtained by recrystallizing the residue of the reaction liquid with a solvent such as hexane or toluene. In the unpurified state, it is used for the polymerization of the resin. Alternatively, the following catalyst may be used, that is, a dehydration condensing agent such as dicyclohexylcarbodiimide may be used to dicarboxylic acid and N-hydroxybenzotriazole (hereinafter also Known as "HOBT") is a catalyst for the formation of HOBT active esters. As a cockroach! The structure and the phenolic hydroxyl diamine can be preferably used: 2,2-bis(3-amino-4-phenylphenyl)propane, 2,2-bis(4-amino-3-men Phenyl)propane, 3,5-diamino-1-pyridylbenzene, 4,6-diamino-i,3-di-diphenyl, 3,3'-dihydroxy-4,4' -diaminobiphenyl, 4,4'-dihydroxy-3,3,-diaminobiphenyl, 3,4-dihydroxy-3',4'-diaminobiphenyl, bis(3-amine 4-hydroxyphenyl)sulfone, bis(3-amino-4-hydroxyphenyl) sulfide, bis(3-amino-4-hydroxy 136993.doc -31- 200940601 phenyl) form, double (4-Amino-3-hydroxyphenyl)methane, bis(4-amino-3-phenylphenyl) hard, and the following compound group: [Chem. 37]

〇 ❹ 上述紛性二胺可單獨使用或組合2種以上使用。進而’ 就製成樹脂組合物時之光敏感度較高之方面及顯影時之膜 厚邊際較高之方面而言,較好的是2,2-雙(3-胺基-4-羥基苯 基)丙烧與雙(4_胺基_3_羥基苯基)颯、及下述化合物群: 136993.doc •32· 200940601 [化 38]〇 ❹ The above diamines may be used singly or in combination of two or more. Further, 2'2-bis(3-amino-4-hydroxyphenyl) is preferred in terms of a high light sensitivity when the resin composition is formed and a higher film thickness at the time of development. Acetylene and bis(4-amino-3-ylhydroxyphenyl)indole, and the following compound groups: 136993.doc •32· 200940601 [Chem. 38]

除了製成樹脂組合物時之光敏感度較高之方面及顯影時 之膜厚邊際較高之方面以外,就加熱硬化後膜之機械伸長 率較高之方面而言,進而較好的是2,2-雙(3-胺基-4-羥基苯 基)丙炫。 除此以外,除了光敏感度較高之方面及顯影時之膜厚邊 際較高之方面以外,就加熱硬化後之起伏圖案對有機溶劑 之耐化學藥品性較高之方面而言,較好的是下述化合物 群: 136993.doc •33- 200940601 [化 39] i §In addition to the higher light sensitivity when the resin composition is formed and the higher film thickness at the time of development, the mechanical elongation of the film after heat curing is higher, and further preferably 2, 2-bis(3-amino-4-hydroxyphenyl)propane. In addition to the higher sensitivity of the film and the higher film thickness at the time of development, it is preferred that the undulating pattern after heat curing has a higher chemical resistance to the organic solvent. The following group of compounds: 136993.doc •33- 200940601 [化39] i §

❹ 除此以外,除了光敏感度較高 際較高之方面以外,就加熱硬化後之膜與密封樹脂之密著 = 實現在半導體製造步驟中廣泛使用預 烘膜之藉由丙一醇單甲醚所進 a 較好的是下述化合物鮮: 、一 ·人工之方面而言, I36993.doc -34、 200940601 [化 40]❹ In addition to the higher sensitivity of the light sensitivity, the adhesion of the film after heat hardening to the sealing resin = the use of a pre-baked film by a pre-baked film in the semiconductor manufacturing step It is preferable that the following compounds are fresh: 1. In terms of labor, I36993.doc -34, 200940601 [40]

使用雙(4-胺基_3_羥基苯基)颯之情形時考慮到酚性羥 ◎ It酸度’較好的是使不含盼性經基之二胺與其進行共 聚,或使用分子量較大之二羧酸,調整酚性羥基之濃度。 1 g使用有雙(4-胺基_3·經基苯基)硬之樹月旨中的紛性經基之 濃度較好的是2.0〜5.〇毫莫耳,進而較好的是25〜4·5毫莫 耳’最好的是3.0〜4.0毫莫耳。 具有\結構與酚性羥基之二胺亦可使用與上述具有&結 構與酚性羥基之二胺相同之化合物。 製造本發明之樹脂⑷時,除了上述紛性二胺以外,亦可 〇 視需要共聚合不含酚性羥基之二胺(以下稱為「非酚性二 胺」),藉此控制對驗性水溶液之溶解性及物性。非盼性 二胺係不含齒原子之2〜4價之有機基,其中,較好的是不 含盼性經基之碳數為6〜30之芳香族二胺、及二胺基聚 烷。 具體可列舉Ί(或3,41_、3 3,_、24·_)二胺基笨基 醚、4,4,·(或3,3,-)二胺基二苯基硬、44,(或33·-)二胺基二 苯基硫峻、4,4,-二苯甲酮二胺、3,31_二苯甲明二胺、4,仏 136993.doc •35· 200940601 一(4-胺基苯氧基)苯基颯、441_二(3胺基苯氧基)苯基碾、 4,4-雙(4-胺基苯氧基)聯苯、丨,4_雙(4_胺基苯氧基)苯、 1,3·雙(4-胺基苯氧基)苯、2,2_雙{4_(4_胺基苯氧基)苯基} 丙烷、3,3|,5,5,-四甲基_4,4,_二胺基二苯基甲烷、2,2|•雙(4· 胺基苯基)丙烷、2,2,,6,6,-四甲基_4,4,-二胺基聯苯、 2,2·,6,6,-四(三氟曱基)_4,4,_二胺基聯苯、雙{(4_胺基苯基)_ 2-丙基}1’4-苯、9,卜雙(心胺基苯基)苐、Μ雙(4胺基笨氧 基苯基)第、3,3,·二甲基聯苯胺、3,3,_二甲氧基聯苯胺、 © 3,5_二胺基苯甲酸等芳香族二胺;2,6-二胺基吡啶、2,仁二 胺基比定、雙(4·胺基本基_2_丙基)_ι,4_苯、二胺基聚石夕氧 烷化合物等二胺《非酚性二胺可單獨使用,或組合2種以 上使用。 為了實際合成本發明之樹脂(a),可將酚性二胺或非酚性 二胺溶解於N-甲基吡咯啶酮或N,N_:甲基乙醯胺等適當之 溶劑中,添加吡啶、三乙胺等三級胺作為觸媒,使上述二 g 羧酸醯氣化而成之化合物溶於r-丁内酯、丙酮等適當之 溶劑中,並滴加至冷卻至_3(rc〜15〇c之上述酚性二胺或非 酚性二胺之溶液中,藉此獲得目標之聚縮合結構。 關於本發明之樹脂(a),可僅使用上述聚苯并噚唑前驅物 單元,亦可視需要共聚合聚醯亞胺單元’該聚醯亞胺單元 具有藉由使四羧酸二酐與具有酚性羥基之芳香族二胺進行 環化縮合而得之酚性羥基。 作為合成含酚性羥基之聚醯亞胺單元時之四羧酸二奸, 較好的是Z3即不含鹵原子之4價有機基,尤其好的是選 136993.doc -36 - 200940601 碳數為8〜36之芳香族四羧酸二酐、及碳數為6〜34之脂環式 四羧酸二酐的化合物。具體可列舉:5-(2,5-二氧代四氫| 呋喃基)-3_甲基-環己烯二甲酸酐、均苯四甲酸二酐、 1’2,3,4-苯四甲酸二酐、3,3,,4,4,_二苯曱酮四甲酸二酐、 2,2',3,3'-二苯甲_|四曱酸二酐、3,3,,4,4,_聯苯四甲酸二 酐、2,2’,3,3’-聯苯四甲酸二酐、亞甲基_4,4,_二鄰苯二甲酸 二酐、1,1-亞乙基-4,4,-二鄰苯二甲酸二酐、2,2-亞丙基· 4,4'-二鄰苯二甲酸二酐、l52_伸乙基_4,4,_二鄰苯二甲酸二 奸、1,3-三亞甲基-4,4'-二鄰苯二甲酸二酐、1,4-四亞甲基_ 4,4'-二鄰苯二甲酸二酐、15-五亞甲基_4,4,_二鄰苯二甲酸 二酐、雙(3,4-二羧基苯基)醚二酐、硫基_4,4'_二鄰笨二甲 酸二酐、磺醯基_4,4,-二鄰苯二甲酸二酐、ι,3-雙(3,4-二繞 基笨基)苯二酐、1,3-雙(3,4-二羧基苯氧基)苯二酐、1,4_雙 (3,4-二羧基苯氧基)苯二酐、1>3·雙[2-(3,4-二羧基苯基)-2-丙基]苯二酐、1,4-雙[2-(3,4-二羧基苯基)-2-丙基]笨二 酐、雙[3·(3,4-二羧基苯氧基)苯基]曱烷二酐、雙[4-(3,4-二羧基苯氧基)苯基]曱烷二酐、2,2-雙[3-(3,4-二羧基苯氧 基)苯基]丙烷二酐、2,2·雙[4-(3,4-二羧基苯氧基)苯基]丙 烷二酐、雙(3,4-二羧基苯氧基)二曱基矽烷二酐、1,3-雙 (3,4-二羧基苯基)-1,1,3,3-四甲基二矽氧烷二酐、2,3,6,7· 萘四甲酸二酐、1,4,5,8·萘四甲酸二酐、1,2,5,6-萘四甲酸 二酐、3,4,9,10-二萘嵌苯四曱酸二酐、2,3,6,7-蒽四甲酸二 酐、1,2,7,8-菲四甲酸二酐、伸乙基四曱酸二酐、1,2,3,4· 丁烷四羧酸二酐、1,2,3,4-環丁烷四羧酸二酐、環戊烷四 136993.doc -37- 200940601 羧酸二酐、環己烷-1,2,3,4-四甲酸二酐、環己烷 四甲酸二酐、3,3',4,4·-聯環己燒四甲酸二肝、幾基·4,4,_雙 (環己烷-1,2-二羧酸)二酐、亞甲基·4,4,-雙(環己烷4,2.: 羧酸)二酐、1,2-伸乙基-4,4'-雙(環己烷二鲮酸)二酐、 1,1-亞乙基-4,4'-雙(環己烧-1,2-二幾酸)二肝、2,2-亞丙基_ 4,4’-雙(環己烷-1,2-二羧酸)二酐、氧基_4,4,_雙(環已院· 1,2·二羧酸)二酐、硫基-4,4·-雙(環己烷_丨,2-二羧酸)二軒、 磺醯基-4,4'-雙(環己烷-1,2-二羧酸)二酐、二環[2,2,2]辛_7_ 〇 烯-2,3,5,6-四曱酸二酐、rel-[lS,5R,6R]-3-氧雜二環[3,2,1] 辛烷-2,4-二酮-6-螺-3’-(四氫呋喃 _2,,5,-二酮)、4-(2,5-二氧 代四氫n夫鳴-3-基)-1,2,3,4-四氫萘-1,2-二叛酸肝、乙二醇_ 雙-(3,4-二羧酸酐苯基)醚等;其中較好的是5_(2,5_二氧代 四氫-3-0夫喊基)-3 -甲基-環己烯-1,2-二叛酸酐、雙(3,4_二 叛基苯基)謎一針、雙(3,4-二羧基苯基)礙二肝、4,4,-(4,4^ 亞異丙基二苯氧基)雙(鄰苯二甲酸酐);就對水銀燈之丨線 ❹ 之透明性之觀點、對鹼性水溶液之溶解性、光敏感度方面 而言,其中進而較好的是5-(2,5-二氧代四氫-3-呋喃基)_3· 甲基·環己烯·1,2二羧酸酐、雙(3,4·二羧基苯基)醚二酐。 合成含酚性羥基之醯亞胺單元時所使用的具有以χ3所表 示之酚性羥基之二胺選自上述酚性二胺(m3=2時)或非酚性 二胺(m3=〇時),或可列舉2,4-二胺基苯酚(m3 = i時p就製 成樹脂組合物時之光敏感度較高之方面而言,其中較好的 疋2,2 -雙(3 -胺基-4 -經基苯基)丙烧。 合成含酚性羥基之醯亞胺單元時之去除水縮合反應可藉 136993.doc -38 - 200940601 由如下方法進行:於酸或驗觸媒存在之條件下,將上述四 竣酸二酐與上述紛性二胺加熱至30t〜22(rc,較好的是加 熱至〜20(rc。作為酸觸媒,可使用製造聚酿亞胺時 通常所使用之硫酸之類之無機酸或對甲苯續酸之類之有機 酸。亦可使用γ_戊内醋與㈣。作為鹼觸媒,可使用咐 啶、二乙胺、二f基胺基0比咬、i,8_二氣雜二環(5,4,㊈十 一歸-7、U3A7-四氮雜三環(„,】山3,7)癸烧、三乙二胺 等。 〇 進而’亦可使用如下方法:尤其是於不添加聚縮合觸媒 等之狀態下,將反應液溫度保持在產生酿亞胺化反應之溫 度以上,利用甲苯等與水共沸之溶劑,將由脫水反應所產 生之水去除至反應系外,從而完成醯亞胺化脫水縮合反 應。 作為進行脫水縮合反應之反應溶劑,較好的是除了用以 使水共/弗之溶劑即曱苯以外,亦使用用以溶解樹脂之極性 • 之有機溶劑。作為該等極性溶劑,可使用丁内酯、N_曱 基吡咯啶酮、二甲基甲醯胺、二甲基乙醯胺、四甲基脲、 環丁碾等。 於製造聚醯亞胺單元時,除了上述酚性二胺以外,亦可 視需要而共聚合上述非酚性二胺,藉此控制對鹼性水溶液 之溶解性及物性。 再者,使用2種以上四羧酸二酐或2種以上酚性二胺或非 酚性二胺之情形時,可製成利用逐次反應而成之嵌段共聚 縮合物;添加3種成分以上之原料之情形時,可同時向反 136993 .doc _39· 200940601 應系中添加原料,製成無規共聚縮合物。 盘樹脂⑷’可共聚合上述聚苯并十坐前驅物單元 與聚醯亞胺單元。 皁疋 光敏感度聚合比率可任意選擇,就 聚酿==而言’較好的是聚苯并十坐前驅物單元: 彖亞胺卓疋之比率為10·· 90〜100: 〇之範圍。 S之樹&(a)之末端可經末端基加以修飾。作為修倚 末端之方法’於合成樹脂時’添加適量如下: 丁烯二酸酐、丁-醯紅 貝r J .順 Ο 丁一酸酐、肉桂酸酐、5_降莅烯酸酐、4_ 炔基鄰苯二甲酸酐、苯基乙炔基鄰苯二甲酸酐、3,6-環氧 …細氫鄰苯二甲酸奸、4_環己稀十2•二甲酸軒、環己 烷-1,2_二甲酸酐、4·甲基環己烷-1,2-二甲酸酐、4_胺基苯 乙烯、4·乙炔基笨胺、3_乙炔基苯胺等。其中,為了提高 機械伸長率、或提高玻璃轉移溫度’較好的是添加選自由 下述結構所組成之群+的至少旧末端基: [化 41]In the case of using bis(4-amino-3-hydroxyphenyl) ruthenium, it is preferable to consider the phenolic hydroxy ◎ It acidity. It is preferred to copolymerize the diamine without the desired trans group, or to use a larger molecular weight. The dicarboxylic acid is adjusted to the concentration of the phenolic hydroxyl group. The concentration of the divalent base group in the 1 g of the bis (4-amino-3)-based phenyl group is preferably 2.0 to 5. 〇 millimol, and further preferably 25 ~4·5 millimoles' the best is 3.0~4.0 millimoles. The diamine having a structure and a phenolic hydroxyl group may also be the same as the above-mentioned diamine having a & structure and a phenolic hydroxyl group. When the resin (4) of the present invention is produced, in addition to the above-mentioned diamine, a diamine (hereinafter referred to as "non-phenolic diamine") which does not contain a phenolic hydroxyl group may be copolymerized as needed, thereby controlling the checkability. Solubility and physical properties of aqueous solutions. The non-promising diamine is an organic group having 2 to 4 valences of a tooth atom, and among them, an aromatic diamine having a carbon number of 6 to 30 which does not contain a desired transradical group, and a diamine polyalkane are preferred. . Specifically, hydrazine (or 3,41_, 3 3, _, 24·_) diamino strepyl ether, 4,4, (or 3,3,-) diaminodiphenyl hard, 44, ( Or 33·-) diaminodiphenyl sulphide, 4,4,-benzophenone diamine, 3,31-dibenzoylamine diamine, 4, 仏136993.doc •35· 200940601 one (4 -aminophenoxy)phenylhydrazine, 441_bis(3aminophenoxy)phenyl milling, 4,4-bis(4-aminophenoxy)biphenyl, anthracene, 4_bis (4 _Aminophenoxy)benzene, 1,3·bis(4-aminophenoxy)benzene, 2,2_bis{4_(4-aminophenoxy)phenyl}propane, 3,3| ,5,5,-tetramethyl-4,4,-diaminodiphenylmethane, 2,2|•bis(4·aminophenyl)propane, 2,2,6,6,-four Methyl 4,4,-diaminobiphenyl, 2,2·,6,6,-tetrakis(trifluoromethyl)-4,4,diaminobiphenyl, bis{(4-aminobenzene) Base) _ 2-propyl} 1'4-benzene, 9, bis (cardylaminophenyl) fluorene, bismuth (4 amino phenyloxyphenyl), 3,3, dimethyl Aniline, 3,3,-dimethoxybenzidine, aromatic diamine such as 3,5-diaminobenzoic acid; 2,6-diaminopyridine, 2, aryldiamine-based, double ( 4·amine basic Diamines such as the base 2_propyl)_ι, 4_benzene, and diaminopolyxoxane compounds "The non-phenolic diamines may be used singly or in combination of two or more. In order to actually synthesize the resin (a) of the present invention, a phenolic diamine or a non-phenolic diamine may be dissolved in a suitable solvent such as N-methylpyrrolidone or N,N_:methylacetamide, and pyridine may be added. A tertiary amine such as triethylamine is used as a catalyst, and the compound obtained by vaporizing the above-mentioned di-g-carboxylic acid ruthenium is dissolved in a suitable solvent such as r-butyrolactone or acetone, and added dropwise to _3 (rc) In the solution of the above phenolic diamine or non-phenolic diamine, the target polycondensation structure is obtained. With respect to the resin (a) of the present invention, only the above polybenzoxazole precursor unit can be used. The polyimine unit may also be copolymerized as needed. The polyimine unit has a phenolic hydroxyl group obtained by cyclizing and condensing a tetracarboxylic dianhydride with an aromatic diamine having a phenolic hydroxyl group. In the case of a polyvalent imine unit containing a phenolic hydroxyl group, it is preferred that Z3 is a tetravalent organic group which does not contain a halogen atom, and particularly preferably 136993.doc -36 - 200940601 has a carbon number of 8 a compound of aromatic tetracarboxylic dianhydride of ~36 and an alicyclic tetracarboxylic dianhydride having a carbon number of 6 to 34. Specific examples thereof include 5- (2,5-dioxotetrahydro | furyl)-3_methyl-cyclohexene dicarboxylic anhydride, pyromellitic dianhydride, 1'2,3,4-benzenetetracarboxylic dianhydride, 3, 3,4,4,_dibenzophenone tetracarboxylic dianhydride, 2,2',3,3'-diphenylmethyl-|tetradecanoic dianhydride, 3,3,,4,4,_biphenyl Tetracarboxylic acid dianhydride, 2,2',3,3'-biphenyltetracarboxylic dianhydride, methylene-4,4,4-diphthalic dianhydride, 1,1-ethylene-4,4 ,-diphthalic dianhydride, 2,2-propylene-4,4'-diphthalic dianhydride, l52_extended ethyl-4,4,_diphthalic acid 1,3-trimethylene-4,4'-diphthalic dianhydride, 1,4-tetramethylene-4,4'-diphthalic dianhydride, 15-pentamethylene _ 4,4,_diphthalic dianhydride, bis(3,4-dicarboxyphenyl)ether dianhydride, thio- 4,4'-di-o-dicarboxylic acid dianhydride, sulfonyl _4, 4,-diphthalic dianhydride, iota, bis(3,4-dicyclopentyl)phthalic anhydride, 1,3-bis(3,4-dicarboxyphenoxy)phthalic anhydride 1,4_bis(3,4-dicarboxyphenoxy)benzene dianhydride, 1>3 bis[2-(3,4-dicarboxyphenyl)-2-propyl]benzene dianhydride, 1 ,4-bis[2-(3,4-dicarboxyphenyl)-2-propane ]] dianhydride, bis[3·(3,4-dicarboxyphenoxy)phenyl]decane dianhydride, bis[4-(3,4-dicarboxyphenoxy)phenyl]decane dianhydride 2,2-bis[3-(3,4-dicarboxyphenoxy)phenyl]propane dianhydride, 2,2·bis[4-(3,4-dicarboxyphenoxy)phenyl]propane Dihydride, bis(3,4-dicarboxyphenoxy)didecyldecane dianhydride, 1,3-bis(3,4-dicarboxyphenyl)-1,1,3,3-tetramethyl a siloxane dianhydride, 2,3,6,7·naphthalenetetracarboxylic dianhydride, 1,4,5,8-naphthalenetetracarboxylic dianhydride, 1,2,5,6-naphthalenetetracarboxylic dianhydride, 3, 4,9,10-perylene tetraphthalic acid dianhydride, 2,3,6,7-decanetetracarboxylic dianhydride, 1,2,7,8-phenanthrenecarboxylic acid dianhydride, ethyltetradecanoic acid Dihydride, 1,2,3,4·butane tetracarboxylic dianhydride, 1,2,3,4-cyclobutanetetracarboxylic dianhydride, cyclopentane tetra 136993.doc -37- 200940601 carboxylic acid II Anhydride, cyclohexane-1,2,3,4-tetracarboxylic dianhydride, cyclohexanetetracarboxylic dianhydride, 3,3',4,4·-bicyclohexanetetracarboxylic acid dihepatic, several groups·4 , 4,_bis(cyclohexane-1,2-dicarboxylic acid) dianhydride, methylene-4,4,-bis(cyclohexane 4,2.:carboxylic acid) dianhydride, 1,2- Ethyl-4,4'-bis(cyclohexanedicarboxylic acid) dianhydride 1,1-Ethylene-4,4'-bis(cyclohexan-1,2-diacid) di-hepatic, 2,2-propylene-4,4'-bis(cyclohexane-1 ,2-dicarboxylic acid)dianhydride,oxy-4,4,_bis(cyclohexyl-1,dicarboxylic acid) dianhydride, thio-4,4·-bis(cyclohexane_丨,2-dicarboxylic acid) Erxuan, sulfonyl-4,4'-bis(cyclohexane-1,2-dicarboxylic acid) dianhydride, bicyclo[2,2,2]oct-7-decene -2,3,5,6-tetradecanoic acid dianhydride, rel-[lS,5R,6R]-3-oxabicyclo[3,2,1]octane-2,4-dione-6- Spiro-3'-(tetrahydrofuran-2,5,-dione), 4-(2,5-dioxotetrahydron-v-but-3-yl)-1,2,3,4-tetrahydronaphthalene -1,2-di-rebel liver, ethylene glycol _ bis-(3,4-dicarboxylic anhydride phenyl) ether, etc.; among them, 5_(2,5-dioxotetrahydro-3-0 is preferred喊基)-3-Methyl-cyclohexene-1,2-dioxalic anhydride, bis(3,4-di-phenylene) mystery, bis(3,4-dicarboxyphenyl) Di-hepatic, 4,4,-(4,4^ isopropylidene diphenoxy) bis(phthalic anhydride); from the viewpoint of transparency to the enthalpy of mercury lamps, dissolution of alkaline aqueous solution In terms of sex and light sensitivity, among them, 5-(2,5-dioxo) is further preferred. Tetrahydro-3-furanyl) methyl-3 · · · cyclohexene-1,2-dicarboxylic anhydride, bis (3,4-dicarboxyphenyl) ether dianhydride. The diamine having a phenolic hydroxyl group represented by χ3 used in the synthesis of a phenolic hydroxyl group-containing quinone imine unit is selected from the above phenolic diamines (when m3=2) or non-phenolic diamines (m3=〇) Or, 2,4-diaminophenol (when m3 = i, the light sensitivity when p is made into a resin composition, wherein 疋2,2-bis(3-amine) is preferred The condensed water condensation reaction in the synthesis of a quinone imine unit containing a phenolic hydroxyl group can be carried out by the following method: in the presence of an acid or a catalyst. Under the conditions, the above tetradecanoic dianhydride and the above diamine are heated to 30t~22 (rc, preferably heated to ~20 (rc. As an acid catalyst, it can be used when making the brewed imine) An organic acid such as sulfuric acid or an organic acid such as p-toluene may be used. γ-Pentyl vinegar and (4) may also be used. As the base catalyst, acridine, diethylamine or dif-amino group may be used. Specific bite, i, 8_ two gas heterobicyclic ring (5, 4, ninety-one -7, U3A7-tetraazatricyclo („, 】 mountain 3, 7) 癸, triethylenediamine, etc. 〇 Further 'can also be used as Method: in particular, in a state in which a polycondensation catalyst or the like is not added, the temperature of the reaction liquid is maintained at a temperature higher than the temperature at which the amidation reaction is carried out, and the water generated by the dehydration reaction is removed by using a solvent azeotropy or the like with water. To the outside of the reaction system, the hydrazine imidation dehydration condensation reaction is completed. As the reaction solvent for performing the dehydration condensation reaction, it is preferred to use a solvent for dissolving the resin in addition to the solvent for the water co-prep. Organic solvent of polarity • As such a polar solvent, butyrolactone, N-decyl pyrrolidone, dimethylformamide, dimethylacetamide, tetramethylurea, cyclobutylate or the like can be used. In the production of the polyimine unit, in addition to the above phenolic diamine, the non-phenolic diamine may be copolymerized as needed to control the solubility and physical properties of the alkaline aqueous solution. In the case of tetracarboxylic dianhydride or two or more kinds of phenolic diamines or non-phenolic diamines, a block copolymer condensate obtained by successive reaction can be obtained; when three or more components are added, At the same time to the opposite 136993 .doc _39· 200940601 The raw material is added to make a random copolymer condensate. The disc resin (4)' can copolymerize the above polyphenylene and sit on the precursor unit and the polyimine unit. The saponin light sensitivity polymerization ratio can be arbitrarily Choice, in terms of brewing ==, 'preferably polyphenylene and ten sitting precursor units: the ratio of quinone imine is 10·· 90~100: range of 。. S tree & (a) The end can be modified by the terminal group. As a method of repairing the end, when adding the resin, the appropriate amount is added as follows: butylene phthalic anhydride, butyl ruthenium ruthenium ruthenium succinic anhydride, cinnamic anhydride, 5 _ drop Acetic anhydride, 4_ alkynyl phthalic anhydride, phenyl ethynyl phthalic anhydride, 3,6-epoxy...fine hydrogen phthalic acid, 4_cyclohexene decantate Cyclohexane-1,2-dicarboxylic anhydride, 4·methylcyclohexane-1,2-dicarboxylic anhydride, 4-aminostyrene, 4·ethynylamine, 3-ethynylaniline, and the like. Among them, in order to increase the mechanical elongation or to increase the glass transition temperature, it is preferred to add at least the old terminal group selected from the group consisting of the following structures: [Chem. 41]

0 HOOC"^^ 。又,亦可殘留本發明中所使用之二羧酸作為末端。 關於樹脂(a)之重量平均分子量,較好的是以聚苯乙烯換 算之重量平均分子量為3,_〜100,000,*子量為 136993.doc -40- 200940601 上時’機械物性進一步接高,盔7Λλλλ ,奴间為70,000以下時,於2.38。/〇 ΤΜΑΗ水溶液中之分散性變 艾仲尺订起伙圖案之解像性能 提高。 ❹0 HOOC"^^. Further, the dicarboxylic acid used in the present invention may be left as a terminal. With respect to the weight average molecular weight of the resin (a), it is preferred that the weight average molecular weight in terms of polystyrene is 3, _~100,000, and the amount of * is 136,993.doc -40 - 200940601 when the mechanical properties are further increased. Helmet 7Λλλλ, when the slave is below 70,000, at 2.38. /〇 The dispersibility in the hydrazine aqueous solution is improved. ❹

關於所製造之樹脂溶液’可經過純化步驟對樹脂⑷進行 離析’使其再次溶解於有機㈣後使I作為具體之純化 步驟,包含如下步驟:首先,於藉由上述製法所得之樹脂 溶液中添加甲帛、乙醇、異丙醇、水等不良溶劑,使樹脂 析出。繼而,使其再次溶解於γ_丁内酯•甲基吡咯啶酮 等良溶劑中,使該溶解液通過填充有離子交換樹脂之管 柱,藉此去除離子性雜質。㈣,將f亥溶解液滴加至純水 中,對析出物過濾分離後,進行真空乾燥。藉此,亦可去 除低分子量成分或離子性雜質等。 <正型感光性樹脂組合物> (A)鹼溶性樹脂 為了製成正型感光性樹脂組合物,包含本發明之樹脂(a) 之(A)驗溶性樹脂為必需成分β作為樹脂(a)以外之驗溶性 樹脂’例如為具有選自由酚性羥基及羧基所組成之群中的 至少1種基、可溶於鹼性水溶液之樹脂或彼等之前驅物, 具體可列舉:以酚醛清漆樹脂及可溶酚醛樹脂為代表之酚 類樹脂及其衍生物、及聚羥基苯乙烯及其衍生物、以及具 有在分子内共聚合該等樹脂而成之結構的樹脂、本發明之 樹脂(a)以外之PBO前驅物即鹼性水溶液可溶性聚合物、含 酚性羥基之鹼性水溶液可溶性之聚醯亞胺、由四羧酸與二 胺所衍生且於醯胺鍵之鄰位具有羧基之聚醯亞胺前驅物。 136993.doc •41- 200940601 於該等⑷驗溶性樹脂中,為了發揮所需之效果,本發明 之樹脂㈣⑷驗溶性樹脂中所占之比率較好的是_ 〇/〇以上’更好的是2〇質量。/ 進而較好的是40質量% 以上,最好的是60質量%以上。上限值 限但較好的是100質量 /0 0 (B)感光性重氮萘醌化合物 製作正型感光性樹脂組合物(以下亦稱為「本組合物」) ❹ 之情形時所使用之感光性重氮萘醌化合物係以下詳:闌述 之選自由具有特定結構之聚㈣化合物之叠氣 基·4_磺酸醋、及該聚羥基化合物之12_萘醌二疊氮基5-磺 酸醋所組成之群中的至少-種化合物(以下亦稱為「聚經 基化合物之NQD化物」)。 該聚羥基化合物之NQD化物可藉由如下方法而獲得:根 據常規方法,利用氣續酸或亞硫酿氣,將萘酿二疊說績酸 化合物製成磺醯氣,使所得之萘醌二疊氮磺醯氣與聚羥基 化σ物進行縮合反應。例如藉由如下方法而獲得:於二巧 烷、丙酮或四氫呋喃等溶劑中,在三乙胺等鹼觸媒存在之 條件下,使特定量之聚羥基化合物與1,2·萘醌二疊氮基_5-碩醯氣或1,2·萘醌二疊氮基_4_磺醯氣進行反應、酯化,對 所得之生成物進行水洗、乾燥。 以下’表示藉由與本發明之樹脂進行組合而獲得具有高 敏感度、且無膨潤現象之良好之起伏圖案的感光性重氮萘 酿化合物。 以下述通式(Β1)所表示之聚羥基化合物之nqd化物: 136993.doc -42· 200940601 [化 42]Regarding the resin solution produced, 'the resin (4) can be isolated by a purification step to dissolve it again in the organic (4), and I is used as a specific purification step, comprising the steps of: firstly, adding to the resin solution obtained by the above-mentioned preparation method A poor solvent such as formazan, ethanol, isopropanol or water causes the resin to precipitate. Then, it is dissolved again in a good solvent such as γ-butyrolactone/methylpyrrolidone, and the solution is passed through a column packed with an ion exchange resin, thereby removing ionic impurities. (4) The dissolved droplets of fhai were added to pure water, and the precipitates were separated by filtration and then vacuum dried. Thereby, it is also possible to remove low molecular weight components or ionic impurities. <Positive Photosensitive Resin Composition> (A) Alkali-Soluble Resin In order to obtain a positive-type photosensitive resin composition, (A) the test-soluble resin containing the resin (a) of the present invention is an essential component β as a resin ( The test-soluble resin other than a) is, for example, a resin having at least one group selected from the group consisting of a phenolic hydroxyl group and a carboxyl group, a resin soluble in an aqueous alkaline solution, or a precursor thereof, and specific examples thereof include a phenol aldehyde. a phenol resin and a derivative thereof, a phenol resin and a resole resin thereof, and a polyhydroxystyrene and a derivative thereof, and a resin having a structure in which the resin is copolymerized in a molecule, the resin of the present invention ( The PBO precursor other than a) is an alkaline aqueous solution soluble polymer, a polyhydrazinium soluble in an alkaline aqueous solution containing a phenolic hydroxyl group, derived from a tetracarboxylic acid and a diamine, and having a carboxyl group in the ortho position of the indole bond. Polyimine precursor. 136993.doc •41- 200940601 In the (4) gel-soluble resin, in order to exert the desired effect, the ratio of the resin (4) (4) of the resin of the present invention is preferably _ 〇 / 〇 or more. 2 〇 quality. Further, it is preferably 40% by mass or more, and most preferably 60% by mass or more. The upper limit is preferably 100 mass/0 0 (B). The photosensitive diazonaphthoquinone compound is used in the case of producing a positive photosensitive resin composition (hereinafter also referred to as "the present composition"). The photosensitive diazonaphthoquinone compound is as follows: a gas-based group of 4 - sulfonic acid vinegar selected from a poly(tetra) compound having a specific structure, and a 12-naphthoquinonediazide group of the polyhydroxy compound. At least one compound of the group consisting of sulfonic acid vinegar (hereinafter also referred to as "NQD compound of a poly-based compound"). The NQD compound of the polyhydroxy compound can be obtained by the following method: according to a conventional method, using a gas-renewed acid or a sulfite gas, the naphthalene-stacked acid compound is made into a sulfonium gas, and the obtained naphthoquinone is obtained. The azide sulfonium gas is subjected to a condensation reaction with the polyhydroxylated σ. For example, it is obtained by subjecting a specific amount of a polyhydroxy compound to 1,2, naphthoquinonediazide in a solvent such as a dioxane, acetone or tetrahydrofuran in the presence of a base catalyst such as triethylamine. The base product is reacted and esterified with 1,5-anthracene gas or 1,2.naphthoquinonediazide-4-4 sulfonium gas, and the obtained product is washed with water and dried. The following 'is a photosensitive diazo naphthalene compound which is obtained by combining with the resin of the present invention to obtain a favorable undulating pattern having high sensitivity and no swelling phenomenon. An nqd compound of a polyhydroxy compound represented by the following formula (Β1): 136993.doc -42· 200940601 [Chem. 42]

{式中’ k、卜m、及η分別獨立表示1或2,心〜!^分別獨 立表示選自由氫原子、鹵原子、烷基、烯基、院氧基、稀 丙基、及醯基所組成之群中的基,ΥπΥ3分別獨立表示選 ❹ 自由單鍵、-0-、-S-、-so-、-S02、-CO-、_c〇2、亞環戊 基、亞環己基、伸苯基、及以下述化學式所表示之有機基 所組成之群中的基: [化 43]Wherein 'k, 卜m, and η each independently represent 1 or 2, and the cores ~!^ are independently selected from the group consisting of a hydrogen atom, a halogen atom, an alkyl group, an alkenyl group, an alkoxy group, a propyl group, and a fluorenyl group. The groups in the group formed by ΥπΥ3 independently represent the free single bond, -0-, -S-, -so-, -S02, -CO-, _c〇2, cyclopentylene, cyclohexylene, a group in which a phenyl group and an organic group represented by the following chemical formula are grouped: [Chem. 43]

(式中,尺^及!^2分別獨立表示選自由氫原子、烷基、烯 ❹ 基、烯丙基、及取代烯丙基所組成之群中的至少1種1價 基); [化 44] (CH2)(wherein, the ruler ^ and !^2 each independently represent at least one monovalent group selected from the group consisting of a hydrogen atom, an alkyl group, an olefin group, an allyl group, and a substituted allyl group); 44] (CH2)

R!6 个13 —-c—R! 6 13 —-c—

Rl4 並且w表示 (式中,R"〜R16分別獨立表示氫原子或烷基 1〜5之整數);及 136993.doc -43· 200940601 [化 45]Rl4 and w represent (wherein R"~R16 independently represent a hydrogen atom or an integer of alkyl 1~5); and 136993.doc -43· 200940601 [Chem. 45]

(式中,R17〜R20分別獨立表示氫原子或烷基)}。 作為具體之化合物,可列舉日本專利特開2001-109149 號公報之[化1 8]〜[化32]中所記載之聚羥基化合物之NQD化 物。 其中,就正型感光性樹脂組合物之敏感度較高之方面而 言,較好的是以下之聚羥基化合物之NQD化物: [化 46](wherein R17 to R20 each independently represent a hydrogen atom or an alkyl group)}. The NQD compound of the polyhydroxy compound described in [Chem. 18] to [Chem. 32] of JP-A-2001-109149 is exemplified as a specific compound. Among them, in terms of the sensitivity of the positive photosensitive resin composition, the NQD of the following polyhydroxy compound is preferred: [Chem. 46]

2. 以下述通式(B2)所表示之聚羥基化合物之NQD化物: [化 47]2. An NQD compound of a polyhydroxy compound represented by the following formula (B2): [Chem. 47]

(B2) {式中,Z表示選自以下述化學式所表示之有機基中的至少 1種4價基: 136993.doc -44- 200940601 [化 48](B2) wherein Z represents at least one tetravalent group selected from the group consisting of the following formula: 136993.doc -44- 200940601 [Chem. 48]

R21 ' R22 ' R 或 1,a、c、d 及i分別獨立表 以上}。 23、及汉24分別獨立表示丨價有機基,b表示〇 、及e分別獨立表示〇〜3之整數,f、g、匕、 示〇〜2之整數,其中f、g、h、及丨之總計為五 Ο 作為具趙之化合物,兮p恭於n 士击 °己载於日本專利特開2001-092138 號公報之[化23]〜[化28]中。其中,就敏感度較高、於正型 感光性樹脂組合物中之析出性較低之方面而言,較好的是 以下之聚羥基化合物之NQD化物: [化 49]R21 ' R22 ' R or 1, a, c, d and i are respectively independent of the above table}. 23, and Han 24 respectively represent the organic group of valence, b denotes 〇, and e respectively represent an integer of 〇~3, an integer of f, g, 匕, 〇 22, where f, g, h, and 丨The total amount is Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο Ο 化合物 化合物 化合物 化合物 化合物 化合物 化合物 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。. Among them, in terms of high sensitivity and low precipitation in the positive photosensitive resin composition, the following NQD compounds of polyhydroxy compounds are preferred: [Chem. 49]

[化 50] ❹[化 50] ❹

136993.doc -45· 200940601 [化 51]136993.doc -45· 200940601 [化51]

[化 52][化52]

3. 以下述通式(B3)所表示之聚羥基化合物之NQD化物: [化 53]3. An NQD compound of a polyhydroxy compound represented by the following formula (B3): [Chem. 53]

(B 3) {式中,k表示3〜8之整數,kxj個L分別獨立表示具有1個以 上之碳原子之1價有機基,j表示1〜5之整數,k個T、及k個 S分別獨立表示選自由氫原子、及1價有機基所組成之群中 之1價基}。 作為具體之較佳例,可列舉日本專利特開2004-347902 號公報之[化24]、[化25]中所記載者。 136993.doc -46- 200940601 其中,就敏感度較高、於正型感光性樹脂組合物中之析 出性較低之方面而言,較好的是以下之聚羥基化合物{式 中,p表示0〜9之整數}2NQD化物: [化 54](B 3) In the formula, k represents an integer of 3 to 8, and kxj L each independently represents a monovalent organic group having one or more carbon atoms, j represents an integer of 1 to 5, k T, and k S each independently represents a monovalent group selected from the group consisting of a hydrogen atom and a monovalent organic group. As a specific preferred example, those described in [Chem. 24] and [Chem. 25] of JP-A-2004-347902 can be cited. 136993.doc -46- 200940601 Among them, in terms of high sensitivity and low precipitation in the positive photosensitive resin composition, the following polyhydroxy compound is preferred: wherein p represents 0 An integer of ~9}2NQD compound: [Chem. 54]

4.以下述通式(B4)所表示之聚羥基化合物之NQD化物: [化 55]4. An NQD compound of a polyhydroxy compound represented by the following formula (B4): [Chem. 55]

{式中,A表示脂肪族之含有三級或四級碳之2價有機基, 並且Μ表示選自以下述化學式所表示之基中的至少1種2價 基: [化 56] cf3 Ο 0 II II , —行一 一c— } ° 0 作為具體之化合物,可列舉日本專利特開2003-131368 號公報之[化22]〜[化28]中所記載者。 136993.doc -47- 200940601 其中,就敏感度較南、於正型感光性樹脂組合物中之析 出性較低之方面而言,較好的是以下之聚羥基化合物之 NQD化物:Wherein A represents an aliphatic divalent organic group containing a tertiary or quaternary carbon, and Μ represents at least one divalent group selected from the group represented by the following chemical formula: [Chem. 56] cf3 Ο 0 II II, -1 -1 C - } ° 0 As a specific compound, those described in [Chem. 22] to [Chem. 28] of JP-A-2003-131368 can be cited. 136993.doc -47- 200940601 Among them, the NQD of the following polyhydroxy compound is preferred in terms of the lower sensitivity of the southerly positive photosensitive resin composition:

[化 57][化57]

5.以下述通式(B5)所表示之聚羥基化合物之nqd化物: [化 58]5. An nqd compound of a polyhydroxy compound represented by the following formula (B5): [Chem. 58]

(B 5) ❹ {式中,R25表示以下述通式所表示之1償有機基: [化 59] 八/(R26)r —CH2 (式中,R26分別獨立表示選自烷基及環烷基之至少1種1價 有機基,並且r分別獨立為〇〜2之整數),可分別相同亦可 不同,並且q分別獨立為〇〜2之整數}。 作為具體之化合物,可列舉日本專利特開2〇〇41〇9849 號公報之[化17卜[化22]中所記載之聚經基化合物之nqd化 136993.doc -48- 200940601 物。 其中,就敏感度較高、於正型感光性樹脂組合物中之析 出性較低之方面而言,較好的是以下之聚羥基化合物之 NQD化物: [化 60](B 5) ❹ {wherein, R25 represents an organic group represented by the following formula: [Chem. 59] VIII / (R26)r - CH2 (wherein R26 independently represents an alkyl group and a cycloalkane At least one monovalent organic group, and r is independently an integer of 〇~2, and may be the same or different, and q is independently an integer of 〇2. Specific examples of the compound include nqd 136993.doc-48-200940601 of the poly-based compound described in JP-A No. 2,41,9849. Among them, the NQD of the following polyhydroxy compound is preferred in terms of high sensitivity and low precipitation in the positive photosensitive resin composition: [Chem. 60]

[化 62][化 62]

136993.doc -49- 200940601 6.以下述通式(B6)所表示之聚羥基化合物之NQD化物: [化 63]136993.doc -49- 200940601 6. NQD compound of a polyhydroxy compound represented by the following formula (B6): [Chem. 63]

{式中,R27表示選自由氫原子、烷基、烷氧基、及環烷基 所組成之群中之基}。In the formula, R27 represents a group selected from the group consisting of a hydrogen atom, an alkyl group, an alkoxy group, and a cycloalkyl group}.

作為具體之化合物,可列舉曰本專利特開2001-356475 號公報之[化18]〜[化22]中所記載者。 其中,就敏感度較高、於正型感光性樹脂組合物中之析 出性較低之方面而言,較好的是以下之聚羥基化合物之 NQD化•物: [化 64]Specific examples of the compound include those described in [Chem. 18] to [Chem. 22] of JP-A-2001-356475. Among them, in terms of high sensitivity and low precipitation in the positive photosensitive resin composition, it is preferred that the following NQD of the polyhydroxy compound is: [Chem. 64]

7.以下述通式(B7)所表示之聚羥基化合物之NQD化物: [化 65]7. An NQD compound of a polyhydroxy compound represented by the following formula (B7): [Chem. 65]

{式中,複數個R28分別獨立表示以下述通式所表示之1價 有機基: 136993.doc -50- 200940601 [化 66]In the formula, a plurality of R28 independently represent a monovalent organic group represented by the following formula: 136993.doc -50- 200940601 [Chem. 66]

(式中,Rw分別獨立表示烷基或環烷基,並且t分別獨立表 示0〜2之整數)’ s分別獨立表示〇〜2之整數,並且r29表示氫 原子、炫基或環烧基}。 ❿ 作為具體之化合物’可列舉日本專利特開2005-008626 號公報之[化15]、[化16]中所記載之聚羥基化合物之nqd 化物。 其中,就敏感度較高、於正型感光性樹脂組合物中之析 出性較低之方面而言,較好的是以下之聚羥基化合物之 NQD化物: [化 67].(wherein Rw each independently represents an alkyl group or a cycloalkyl group, and t each independently represents an integer of 0 to 2) 's each independently represents an integer of 〇~2, and r29 represents a hydrogen atom, a leukoyl group or a cycloalkyl group} . n As a specific compound, the nqd compound of the polyhydroxy compound described in [Chem. 15] and [Chemical Formula 16] of JP-A-2005-008626 is exemplified. Among them, in terms of high sensitivity and low precipitation in the positive photosensitive resin composition, the following NQD compounds of polyhydroxy compounds are preferred: [Chem. 67].

[化 68][68]

’就其感光性樹脂組合 相同顯影時間形成圖案 於上述感光性重氮萘醌化合物中, 物具有高敏感度,以相同曝光量、相 136993.doc 51 200940601 之情形之膜厚邊際較廣,析出性較低之方面而言 是以下之聚羥基化合物之NQD化物: 取好的 [化 69]'The photosensitive resin is combined with the same development time to form a pattern in the above-mentioned photosensitive diazonaphthoquinone compound, which has high sensitivity. With the same exposure amount and phase 136993.doc 51 200940601, the film thickness is wide and precipitates. The lower aspect is the NQD of the following polyhydroxy compound:

CH3—C—CH3 Ο ❹CH3—C—CH3 Ο ❹

OH 於本組合物中’作為感光性重氮蔡酿化合物中之 昼氮確酿基’可較好地使用^鼓 , '— 地便用5-萘醌二疊氮磺醯基或4-篆酿 二疊氮磺醯基之任一者。4茇贿 Λ & 奈聪 考4_萘醌二疊氮磺醯酯化合物於 銀燈之i線區域具有吸收性’適於丨線曝光。%萘鲲二叠 磺醯酯化合物之吸收据展 叠氣 擴展至水銀燈之g線區域,適於g線曝 光於本發明中,較好的是藉由進行曝光之波長而選擇 心萘酿二疊氮伽S旨化合物、叠氮㈣酿化合 物。又,可獲得於同一分子中併用心萘酿二疊氮續醯基、 5-萘醌二疊氮磺醯基之萘醌二疊氮磺醯酯化合物,亦可混 口使用4萘酿―叠氮續酿自旨化合物與%萘酿二疊氮罐酿酿 化合物。 於本組口物中’關於⑻感光性重氮萘醌化合物之添加 量相對於100質量份之⑷驗溶性樹脂為1〜100質量份, 較好的疋3〜40質量份,進而較好的是1〇〜3〇質量份之範 圍為1質量伤以上之添加量時,敏感度提高,為⑽質量 136993.doc -52· 200940601 份以下之添加量時,不產生曝光後之殘渣。 (c)有機溶劑 ❹OH In the present composition, 'as a photosensitive diazona boiled compound, the arsenic can be used as a good base', and the ground can be used as a 5-naphthoquinonediazidesulfonyl group or 4-anthracene. Any of the diazanesulfonyl groups. 4 bribes Λ & Nai Cong test 4_naphthoquinonediazide sulfonate compound in the i-line region of the silver lamp is absorbent 'suitable for sputum exposure. The absorption of the % naphthoquinone bismuth sulfonate compound is extended to the g-line region of the mercury lamp, and is suitable for g-line exposure in the present invention. It is preferred to select the heart naphthalene stack by performing the wavelength of the exposure. Nitrogen G-supplement compound, azide (tetra) brewing compound. Further, a naphthoquinonediazide sulfonate compound which can be obtained in the same molecule and is made of a naphthoquinone, a 5-naphthoquinonediazidesulfonyl group, or a mixture of 4 naphthalenes. The nitrogen is continuously brewed from the compound and the naphthalene-branched azide can brewing compound. In the group of the present invention, the amount of the photosensitive diazonaphthoquinone compound to be added is from 1 to 100 parts by mass, preferably from 3 to 40 parts by mass, based on 100 parts by mass of the (4) of the test-soluble resin. When the amount of 1 〇 to 3 〇 parts by mass is 1 or more, the sensitivity is improved, and when the amount is (10) 136,993.doc -52 · 200940601 or less, the residue after exposure is not generated. (c) Organic solvents ❹

作為使用本發明之樹脂製作樹脂組合物之情形時所使用 之有機溶劑,可列舉:作為極性溶劑之N_甲基_2_吡咯啶 酮、N,N-—甲基乙醯胺、N,N_二甲基甲醯胺、二甲基亞 礙四甲基脲γ -丁内醋、嗎琳等。另外,除了該極性 溶劑以外’亦可混合作為—般有機溶劑之酮類、自旨類、内 醋類、醚類、画代烴類、烴類,例如亦可使用:丙酮、曱 基乙基酮、甲基異丁基輞、環己_、乙酸曱酯、乙酸乙 S曰乙酸丁醋、草酸二乙醋、乳酸乙酿、乳酸甲醋、⑽ 丁知、丙一醇單甲醚乙酸酯、丙二醇單甲謎、苄醇、苯基 乙二醇、乙二醇二甲喊、二乙二醇二甲_、四氫η夫读、二 氣曱烷、1,2·二氣乙烷、“4-二氣丁烷、氣笨、鄰二氣 苯、苯甲喊、己燒、庚貌、苯、甲苯、二甲苯、均三甲苯 等:於該等中,就以下方面而言最好的是r_丁内醋:製 成感光性樹脂組合物之情形時,預烘膜之面内Μ性優 異敏感度較兩*以相间腹出具 » _ 曝先量、相同顯影時間形成圖案 :^的膜厚邊際較廣,感光性重氮萘㈣合物等感光劑 化率進行評價)。 -f較焉(以組合物之黏度變 :本組合物中,添加(c)有機溶劑之情形之添加量,相 / 100質量&之⑷驗溶性樹脂,較好的是⑽〜 二’藉由改變有機溶劑之添加量可控制黏度。更好的是 〇質量伤’進而較好的是15G〜5⑽質量份之範圍。為 136993.doc -53- 200940601 100質量份以上之添加量時,樹脂組合物之黏度變低,堂 布膜之膜厚均勻性得以提高’就樹脂組合物之黏度之觀點 而言,較好的是2000質量份以下,通常變得容易塗布所需 之圖案之膜厚。 (D)烷氧基矽烷化合物 於本發明之樹脂組合物中,亦可視需要添加用以提高與 基板之密著性之接著助劑。作為此種接著助劑,可列舉: 烷基咪唑啉、丁酸、聚羥基苯乙烯、聚乙烯基曱醚、第三 丁基酚醛清漆、環氧矽烷、環氧聚合物、3·胺基丙基三乙 氧基碎烧、各種燒氧基破烧化合物。作為烧氧基梦烧化合 物之具體較佳例’可列舉:3-甲基丙烯酿氧基丙基三烷氧 基石夕烧、3-甲基丙烯醯氧基丙基二烷氧基烷基矽烷、3_縮 水甘油氧基丙基三烷氧基矽烷、3_縮水甘油氧基丙基二烷 氧基烧基石夕烧、3 -胺基丙基三烧氧基碎烧或3_胺基丙基二 烧氧基烷基矽烷與酸酐或酸二酐之反應物;將3_胺基丙基 二院氧基石夕烧或3 -胺基丙基二烧氧基烧基石夕烧之胺基變更 為胺基甲酸酯基或脲基而成者《作為此時之烷基,可列 舉’甲基、乙基、丁基等;作為酸肝,可列舉:順丁稀二 酸酐、鄰苯二甲酸酐等;作為酸二酐,可列舉:均苯四甲 酸二酐、3,3’,4,4'-二苯甲酮四曱酸二酐、4,4,-氧雙鄰苯二 甲酸一肝等;作為胺基甲酸酯基,可列舉:第三丁氧基幾 基胺基等;作為脲基,可列舉笨基胺基羰基胺基等。 作為較好之烷氧基矽烷化合物,就以下方面而言較好的 是以下之烷氧基矽烷化合物··製成感光性樹脂組合物之情 136993.doc • 54· 200940601 形時’顯影時之圖案與基板較好地密著’進而與加熱硬化 後之基板之密著性較高,感光性樹脂組合物中之感光性重 氮萘醌化合物等之感光劑的反應性較低,以及組合物之隨 著時間變化之穩定性較高: [化 70]Examples of the organic solvent used in the case of producing a resin composition using the resin of the present invention include N-methyl-2-pyrrolidinone, N,N-methylethylamine, and N as a polar solvent. N-dimethylformamide, dimethyl sulphate tetramethylurea γ-butyrolactone, morphine, and the like. Further, in addition to the polar solvent, a ketone, a self-acting type, an internal vinegar, an ether, a hydrocarbon, or a hydrocarbon may be mixed as an organic solvent, and for example, acetone or mercaptoethyl may also be used. Ketone, methyl isobutyl hydrazine, cyclohexyl ketone, decyl acetate, acetic acid ethyl succinic acid butyl vinegar, oxalic acid diethyl vinegar, lactic acid ethyl acetate, lactic acid methyl vinegar, (10) butyl ketone, propanol monomethyl ether acetate Ester, propylene glycol monomethyl mystery, benzyl alcohol, phenylethylene glycol, ethylene glycol dimethyl sulfonate, diethylene glycol dimethyl _, tetrahydron-l read, dioxane, 1,2, di-ethane "4-dioxane, gas stupid, ortho-benzene, benzopyrene, hexane, gypsum, benzene, toluene, xylene, mesitylene, etc.: in these, the most It is good that r_butane vinegar: in the case of making a photosensitive resin composition, the in-plane bismuth property of the pre-baked film is more sensitive than that of the two*s: _ exposure amount, same development time to form a pattern: ^The film thickness margin is wider, and the photosensitization rate of the photosensitive diazonaphthalene (tetra) compound is evaluated.) -f is more 焉 (by the viscosity of the composition: in the composition, added (c The amount of the organic solvent to be added, phase / 100 mass & (4) the solubility of the resin, preferably (10) ~ two 'by changing the amount of organic solvent added to control the viscosity. What is better is the quality of the injury' It is preferably in the range of 15 G to 5 (10) parts by mass. When the amount is 136,993.doc -53 - 200940601 100 parts by mass or more, the viscosity of the resin composition is lowered, and the film thickness uniformity of the cloth film is improved. From the viewpoint of the viscosity of the composition, it is preferably 2000 parts by mass or less, and it is usually easy to apply a film thickness of a desired pattern. (D) The alkoxydecane compound is also visible in the resin composition of the present invention. It is necessary to add a secondary auxiliary agent for improving the adhesion to the substrate. Examples of such a secondary auxiliary agent include alkyl imidazoline, butyric acid, polyhydroxystyrene, polyvinyl decyl ether, and third butyl phenol aldehyde. A varnish, an epoxy decane, an epoxy polymer, a tris-propyl propyl triethoxy pulverization, and various alkoxy pulverization compounds. Specific preferred examples of the oxyalkylating compound are exemplified by 3- Methyl propylene oxide oxypropyl trialkoxy Burning, 3-methacryloxypropyl dialkoxyalkyl decane, 3-glycidoxypropyl trialkoxy decane, 3-glycidoxypropyl dialkoxypyrene a reaction of 3-aminopropyltrioxoacetate or 3-aminopropyldimethoxyalkyl decane with an acid anhydride or an acid dianhydride; 3-aminopropyldimethoxylate Or the amino group of 3-aminopropyl bis-oxyalkyl ketone is changed to a urethane group or a ureido group. "As an alkyl group at this time, a methyl group, an ethyl group, and a butyl group can be cited. Examples of the acid liver include: cis-succinic anhydride, phthalic anhydride, etc.; as the acid dianhydride, pyromellitic dianhydride, 3,3', 4,4'-diphenyl Ketone tetradecanoic acid dianhydride, 4,4,-oxydiphthalic acid monohepatic, etc.; as the urethane group, a third butoxy group amino group, etc.; Examples include a strepylaminocarbonylamino group and the like. As a preferred alkoxydecane compound, the following alkoxydecane compound is preferable in terms of the following: 136993.doc • 54· 200940601 When the shape is developed The pattern is well adhered to the substrate, and the adhesion to the substrate after heat curing is high, and the reactivity of the photosensitive agent such as the photosensitive diazonaphthoquinone compound in the photosensitive resin composition is low, and the composition is low. The stability over time is high: [Chem. 70]

i? S V HO—C—Xj-C—N—X2—Si—(O—X4)3-s (18) {式中,X1&X2表示2價有機基,X3及X4表示1價有機基, 並且s表示〇〜2之整數}; [化 71] (Xs)s Η Οi? SV HO—C—Xj-C—N—X2—Si—(O—X4)3-s (18) where X1&X2 represents a divalent organic group, and X3 and X4 represent a monovalent organic group. And s represents an integer of 〇~2}; [71] (Xs)s Η Ο

(X6-0)3-s_Si_X7~N—C、x,c〇〇H HOOC^ (O—Xn)3-s (19) 〇 Η (Χ,ο), {式中,X7及X9表示2價有機基,X8表示4價有機基,X5、 Χ6、Χίο及χπ表示1價有機基,並且s表示〇~2之整數};(X6-0)3-s_Si_X7~N—C, x,c〇〇H HOOC^ (O—Xn)3-s (19) 〇Η (Χ,ο), {where, X7 and X9 indicate 2 valence The organic group, X8 represents a tetravalent organic group, X5, Χ6, Χίο, and χπ represent a monovalent organic group, and s represents an integer of 〇~2};

[化 72][化72]

Qi\2)fX~ XI3—Si—(O—X15)3.s ^ |xh)s (2〇) {式中,Xi3表示2價有機基,X12、乂14及乂15表示1價有機 基,s表示0〜2之整數,並且t表示0〜5之整數}; [化 73] Ο Η χ16一C—N—Xj7—Si—(OX19>3-s (2 1〉 (Xl8)s 136993.doc -55- 200940601 {式中,Xl6 表示-NH-R20 或-〇-Κ·21(Κ·20及 Κ·21 係不含 COOH基 之1價有機基);χ17表示2價有機基’ Xi8及Χι9表示1價有機 基,並且s表示〇〜2之整數}; [化 74]Qi\2)fX~ XI3—Si—(O—X15)3.s ^ |xh)s (2〇) {wherein, Xi3 represents a divalent organic group, and X12, 乂14 and 乂15 represent a monovalent organic group. , s represents an integer of 0 to 2, and t represents an integer of 0 to 5}; [化73] Ο Η χ16-C-N-Xj7-Si-(OX19>3-s (2 1> (Xl8)s 136993 .doc -55- 200940601 {wherein, Xl6 represents -NH-R20 or -〇-Κ·21 (Κ·20 and Κ·21 is a monovalent organic group containing no COOH group); χ17 represents a divalent organic group' Xi8 and Χι9 represent a monovalent organic group, and s represents an integer of 〇~2}; [Chem. 74]

HS—X22—Si—(OX24>3-S (X23)S (2 2) {式中,X22表示2價有機基’ X23及X24表示1價有機基’並 且s表示0〜2之整數}; © [化 75] (2 3) H2N—C—NH— X25~ Si—(0X27)3-5 0 (X26)s {式中,Xu表示2價有機基,Xu及Xu表示1價有機基,並 且s表示0~2之整數}; [化 76] ❹ ((X28)2N)u-HS—X22—Si—(OX24>3-S (X23)S (2 2) {wherein, X22 represents a divalent organic group 'X23 and X24 represents a monovalent organic group' and s represents an integer of 0 to 2}; © [Chem. 75] (2 3) H2N—C—NH—X25~ Si—(0X27)3-5 0 (X26)s {wherein, Xu represents a divalent organic group, and Xu and Xu represent a monovalent organic group. And s represents an integer of 0~2}; [Chem. 76] ❹ ((X28)2N) u-

X29—X3〇—Si—(0X32)3.: (X3l)s (2 4) X29係選自下 迷式群之2價 {式中,Xu表示氫原子或甲基 基: [化 77]X29—X3〇—Si—(0X32)3.: (X3l)s (2 4) X29 is selected from the valence of the lower genus group. In the formula, Xu represents a hydrogen atom or a methyl group: [Chem. 77]

"ch2--S〇2——一O—C—NH ο ο II NH-C-NH--C 〇 O II II ——C一O— *—O一C- 0 II C—NH— o o …II I) CF3 O -C— —NH-ί!— cf3 136993.doc -56- 200940601 ,Xm表示2價有機基,又”及又32表示丨價有機基,s表示〇〜2 之整數,並且u表示1〜3之整數};及 [化 78] \_7^~X33~X34—Si—(OX36)3-S (X35)s (2 5) {式中,X33及X34表示2價有機基,X35及X36表示i價有機 基,並且s表示0〜2之整數}。 〇 ❹ 關於添加接著助劑之情形時之添加量,相對於丨〇〇質量 份之(A)鹼溶性樹脂,較好的是〇 〇1〜2〇質量份之範圍。 (E)藉由熱而引起交聯反應之化合物 於本發明之樹脂組合物中,為了提高熱硬化後之膜的玻 璃轉移溫度、或提高對各種有機溶劑之耐溶劑性,亦可視 需要添加藉由熱而引起交聯反應之化合物(以下亦稱為熱 交聯劑)。此處,作為引起交聯反應之溫度,較好的是 150 3 50 C。交聯反應係於藉由顯影而形成圖案後進行加 熱處理時所產生i為具體之成分,較好的是選自由具有 環氧基、冑甲基、烷氧基甲基、或氧雜環丁基之化合物、 及雙烯丙基二酿亞胺化合物靠成之群中的至少一種化合 物。 作為具有環氧基之化合物,具體可列舉:雙酚A型環氧 樹脂、雙盼F型環氧樹脂、雙輯型環氧樹赌、甲㈣搭 清漆型環氧樹脂、苯㈣搭清漆型環氧樹脂、縮水甘油胺 型環氧樹脂、多硫化物型環氧樹脂。 I36993.doc -57- 200940601 作為具有羥甲基之化合物、或具有烷氧基甲基之化合 物具體而s,較好的是於分子内具有2個以上之以通式 (A)所表示之1價有機基之化合物: [化 79] 和叫 (Λ) {式中,El係氫原子或碳數為1〜6之烷基}。 Ο 於具有經甲基之化合物、或具有院氧基甲基之化合物 中,就製成感光性樹脂組合物時於室溫下進行保存時的黏 度穩定性之觀點而言,較好的是具有烷氧基曱基之化合 物。 於具有沒曱基之化合物、或具有烧氧基甲基之化合物 中進而較_的疋選自纟具有盼性經基之化合物、以通式 (B)所表示之含2價有機基之化合物: " [化 80]"ch2--S〇2——一 O—C—NH ο ο II NH-C-NH--C 〇O II II ——C—O—*—O—C— 0 II C—NH— oo ...II I) CF3 O -C— —NH—ί!— cf3 136993.doc -56- 200940601 , Xm represents a divalent organic group, and “and 32 represents an organic group of valence, and s represents an integer of 〇~2, And u represents an integer of 1 to 3}; and [化78] \_7^~X33~X34—Si—(OX36)3-S (X35)s (2 5) {wherein, X33 and X34 represent a divalent organic The base, X35 and X36 represent an i-valent organic group, and s represents an integer of 0 to 2}. 〇❹ The addition amount in the case of adding a secondary auxiliary agent, relative to the mass fraction of (A) alkali-soluble resin, It is preferably in the range of 1 to 2 parts by mass of 〇〇. (E) a compound which causes a crosslinking reaction by heat in the resin composition of the present invention, in order to increase the glass transition temperature of the film after heat curing, or The solvent resistance to various organic solvents is increased, and a compound which causes a crosslinking reaction by heat (hereinafter also referred to as a thermal crosslinking agent) may be added as needed. Here, as a temperature at which a crosslinking reaction is caused, it is preferred that 150 3 50 C. Cross-linking reaction is borrowed i is a specific component when it is developed to form a pattern and then subjected to heat treatment, and is preferably selected from compounds having an epoxy group, a fluorenylmethyl group, an alkoxymethyl group, or an oxetanyl group, and a diene. The propyl bis-imine compound is at least one compound in the group. As the compound having an epoxy group, specifically, a bisphenol A type epoxy resin, a double hop F type epoxy resin, a double epoxide type epoxy resin Tree gambling, A (four) varnish-type epoxy resin, benzene (four) varnish-type epoxy resin, glycidylamine epoxy resin, polysulfide type epoxy resin. I36993.doc -57- 200940601 as a hydroxymethyl group The compound or the compound having an alkoxymethyl group is specifically s, preferably a compound having two or more monovalent organic groups represented by the formula (A) in the molecule: [Chem. 79] and式) { wherein, El is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms}. 感光 A photosensitive resin composition is prepared from a compound having a methyl group or a compound having an oxymethyl group. From the viewpoint of viscosity stability at the time of storage at room temperature, it is preferred that a compound having an alkoxyfluorenyl group. The compound having a mercapto group or a compound having an alkoxymethyl group is further selected from the group consisting of a compound having a desired trans group, and a compound of the formula (B). a compound containing a divalent organic group: " [80]

(B) e2 {式中,E2係氫原子或碳數為丨〜6之烷基丨、及以通式⑷)所 表示之化合物所組成之群中的至少丨種者: 136993.doc •58· 200940601 [化 81](B) e2 {wherein, E2 is a hydrogen atom or an alkyl group having a carbon number of 丨~6, and at least one of the groups consisting of the compound represented by the formula (4)): 136993.doc •58 · 200940601 [化81]

E3—OH; E3—OHzCs. E 厂 OH2CE3—OH; E3—OHzCs. E Factory OH2C

(C) {式中,E3係氫原子或碳數為1〜6之烷基}。 作為上述具有酚性羥基之化合物,可列舉以下化合物: [化 82](C) wherein, E3 is a hydrogen atom or an alkyl group having 1 to 6 carbon atoms. Examples of the compound having a phenolic hydroxyl group include the following compounds:

h3c ch3H3c ch3

ch2ch3Ch2ch3

136993.doc -59- 200940601 [化 83]136993.doc -59- 200940601 [Chem. 83]

作為以通式(Β)所表示之含2價有機基之化合物,可列舉 以下化合物: [化 84] Ο 1? l H3COH2、N/\N/CH2〇CH3 H3COH2C—NH—C—NH—CH2OCH3 if H3CH2COH2C-NH-C—nh-ch2och2ch3 ΛΛ H3CH20 OCH2CH3 9 H娜丄C㈣ HjCHzCOHr^^N <CH2OCH2CH3 )~~( N N W H3CH20 OCH2CH3 A JSL ff H3COH2cT 丫 CH2〇CH3 h3ch2coh2cx J\ -,ch2och2ch3 0 、N N Mn H3CH2COH2C Y vch2och3ch3 0 ;該等可單獨使用,亦可組合複數種使用。 通式(Β)之Ε2為1價有機基,較好的是碳數為1至20之烷 基,就與樹脂組合物之溶解性之方面而言,更好的是碳數 為1至10之烷基,最好的是碳數為1至4之烷基。 作為以通式(C)所表示之含2價有機基之化合物,可列舉 136993.doc -60- 200940601 以下化合物: [化 85] H3COH2C、n,CH2〇CH3 h^coh2c^ f h3coh2cThe compound containing a divalent organic group represented by the formula (Β) includes the following compounds: [Chem. 84] Ο 1? l H3COH2, N/\N/CH2〇CH3 H3COH2C-NH-C-NH-CH2OCH3 If H3CH2COH2C-NH-C-nh-ch2och2ch3 ΛΛ H3CH20 OCH2CH3 9 H Na丄C(4) HjCHzCOHr^^N <CH2OCH2CH3 )~~( NNW H3CH20 OCH2CH3 A JSL ff H3COH2cT 丫CH2〇CH3 h3ch2coh2cx J\ -,ch2och2ch3 0 ,NN Mn H3CH2COH2C Y vch2och3ch3 0 ; These may be used singly or in combination of plural kinds. The oxime 2 of the formula (Β) is a monovalent organic group, preferably an alkyl group having a carbon number of 1 to 20, and a resin composition. More preferably, it is an alkyl group having a carbon number of 1 to 10, and most preferably an alkyl group having a carbon number of 1 to 4. As a divalent organic compound represented by the general formula (C) The compound of the base may, for example, be 136993.doc -60- 200940601 The following compound: [Chem. 85] H3COH2C, n, CH2〇CH3 h^coh2c^ f h3coh2c

A ch2och3 ch2och3 通式(C)之E3係1價有機基,較好的是碳數為丨至2〇之烷 基,就與樹脂組合物之溶解性之方面而言,更好的是碳數 〇 為1至10之烷基,最好的是碳數為1至4之烷基。 作為具有氧雜環丁基之化合物,具體而言係於一分子中 具有1個以上4員環環狀醚結構之化合物,係可進行陽離子 開環聚合反應、或與羧酸、硫醇、酚之加成反應者。例如 可列舉:1,4-雙{[(3_乙基_3_氧雜環丁基)曱氧基]甲基}苯、 雙[1-乙基(3-氧雜環丁基)]甲醚、4,4,_雙[(3_乙基_3氧雜環 丁基)甲氧基甲基]聯苯、4,4,-雙(3-乙基-3-氧雜環丁基甲氧 〇 基)聯苯、乙二醇雙(3_乙基_3_氧雜環丁基甲基)醚、二乙二 醇雙(3-乙基_3·氧雜環丁基曱基)醚、雙(3_乙基_3_氧雜環 丁基甲基)二磷酸酯、三羥甲基丙烷三(3_乙基_3氧雜環丁 基甲基)喊、季戊四醇四(3-乙基_3·氧雜環丁基甲基)謎、聚 [[3·[(3·乙基·3_氧雜環丁基)甲氧基]丙基]倍半矽氧烷]衍生 物、矽酸氧雜環丁酯、苯酚酚醛清漆型氧雜環丁烷、〗,3_ 雙[(3-乙基氧雜環丁烷-3-基)甲氧基]苯等,但並不限定於 該等。該等可單獨使用,亦可組合複數種使用。 作為雙烯丙基二醯亞胺化合物,例如可列舉以下之化合 136993.doc -61- 200940601 物: [化 86]A ch2och3 ch2och3 The E3 group of the formula (C) is a monovalent organic group, preferably an alkyl group having a carbon number of from 丨 to 2〇, and more preferably a carbon number in terms of solubility of the resin composition. The oxime is an alkyl group of 1 to 10, and most preferably an alkyl group having 1 to 4 carbon atoms. The compound having an oxetanyl group is specifically a compound having one or more 4-membered cyclic ether structures in one molecule, and can be subjected to cationic ring-opening polymerization or carboxylic acid, thiol or phenol. Addition reaction. For example, 1,4-bis{[(3-ethyl_3_oxetanyl) methoxyl]methyl}benzene, bis[1-ethyl(3-oxetanyl)] Methyl ether, 4,4,_bis[(3_ethyl_3 oxetanyl)methoxymethyl]biphenyl, 4,4,-bis(3-ethyl-3-oxetanyl) Oxyfluorenyl)biphenyl, ethylene glycol bis(3_ethyl_3_oxetanylmethyl)ether, diethylene glycol bis(3-ethyl-3.oxetanyl)ether, Bis(3_ethyl_3_oxetanylmethyl)diphosphate, trimethylolpropane tris(3-ethyl-3-cyclohexanylmethyl), pentaerythritol tetrakis(3-ethyl_3· Oxetheylmethyl) mystery, poly[[3·[(3·ethyl·3_oxetanyl)methoxy]propyl] sesquiterpene] derivatives, oxetane oxime An ester, a phenol novolac type oxetane, a bis-bis((3-ethyloxetan-3-yl)methoxy)benzene, etc., but is not limited thereto. These may be used singly or in combination of plural kinds. Examples of the bisallyldiimide compound include the following compounds 136993.doc -61- 200940601: [Chem. 86]

關於含熱交聯劑成分之情形時之調配量’就相對於其交 聯效果,顯影後之熱處理中之圖案之變形、顯影時所產生 ❹之殘渣卜啦容許幅度之方面而言,可根據 聯劑而選擇最適合之添加量,相對於1〇〇質量份之⑷驗容 性樹脂,較好的是0.5〜50質量份,更好的是Μ質量份: (F)選自由丙烯酸醋化合物、甲基丙烯酸賴化合物 丙基之化合物、含甲氧基之化合物、 之群中的至少1種化合物 土 °所組成 於本發明之樹脂組合物中,可含有上述(F)化合物 使相對於根據聚合物之種類及分子量而產生變 的驗溶解速度,能夠於精確之顯影時間範圍内進行顯^物 136993.doc • 62· 200940601 丙烯酸酯化合物、甲基丙烯酸酯化合物係指選自由丙烯 酸酯、曱基丙烯酸酯、丙烯醯胺、及甲基丙烯醯胺所組成 之群中之化合物。作為較好者之具體例,可列舉:新中村 化學工業公司製造之NK-ESTER系列M-20G、M-40G、M-90G、M-230G、CB-1、SA、S、AMP-10G、AMP-20G、 AMP-60G、AM-90G、A-SA、LA、1G、2G、3G、4G、 9G、14G、23G、BG、HD、NPG、9PG、701、BPE-100、 BPE-200、BPE-500、BPE-1300、A-200、A-400、A-600、 ❹ A-HD ' A-NPG ' APG-200 ' APG-400 ' APG-700 ' A-BPE-4、701A、TMPT、A-TMPT、A-TMM-3、A-TMM-3L、A-TMMT 〇 又,可列舉:共榮社化學公司製造之LIGHT ESTER系列 Μ、E、NB、IB、EH、ID、L、L-5、L-7、TD、L-8、S、 MC、130MA ' 041MA ' CH、THF、BZ、PO、IB-X、 HO、HOP、HOA、HOP-A、HOB、A、HO-MS、HO-HH、 HO-MPP、G、P-1M、P-2M、EG、2EG、1.4BG、1.6HX、 o 1.9ND、TMP、G-101P、G-201P、BP-2EM、TB、IS、 MTG、BO、CL、3EG、4EG、9EG、MEG、NP、M-3F、 M_4F、M-6F、FM-108、1.3BG、1.10DC。 又,可列舉:共榮社化學公司製造之LIGHT ACRYLATE 系列 IAA、L-A、S-A、BO-A、EC-A、MTG-A、130A、DPM-A、PO-A、P-200A、NP_4EA、NP-8EA、 THF-A、IB-XA、HOA、HOP-A、M-600A、HOA-MS、 HOA-MPE、3EG-A、4EG-A、9EG-A、14EG_A、NP-A、 136993.doc 63- 200940601 1.6HX-A、1.9ND-A、DCP-A、BP-4EA、BP-4PA、TMP-A、TMP-6EO-3A、PE-3A、PE-4A、DPE-6A、BA-104、 BA-134、G-201P。 又,可列舉:共榮社化學公司製造之EPOXY ESTER系 列 M-600A、40EM、70PA、200PA、80MFA、3002M、及 3002A » 又,可列舉:東亞合成公司製造之ARONIX系列厘-101、M-102、M-110、M-lll、M-113、M-117、M-120、 ❹ Μ-208、Μ-210、Μ-211、Μ·215、Μ-220、Μ-225、Μ- 233、Μ-240、Μ-245、Μ-260、Μ-270、Μ-305、Μ-309、 Μ-310、Μ-315、Μ-320、Μ_350、Μ-360、Μ-400、Μ-408、Μ-450、Μ-5300、Μ-5400、Μ-5600、Μ-5700 ° 進而,可列舉興人公司製造之DMAEA、DMAPAA、 DMAA、ACMO、ΝΙΡΑΜ、及DEAA等。該等化合物可單 獨使用,亦可混合2種以上使用》 作為含烯丙基之化合物,例如可列舉:烯丙醇、烯丙基 苯甲醚、苯甲酸烯丙酯、肉桂酸烯丙酯、Ν-烯丙氧基鄰苯 二甲醯亞胺、烯丙基苯酚、烯丙基苯基砜、烯丙基脲、鄰 苯二曱酸二烯丙酯、間苯二甲酸二烯丙酯、對苯二甲酸二 烯丙酯、順丁烯二酸二烯丙酯、異三聚氰酸二烯丙酯、三 烯丙基胺、異三聚氰酸三烯丙酯、三聚氰酸三烯丙酯、三 烯丙基胺、1,3,5-苯三甲酸三烯丙酯、偏苯三甲酸三烯丙 酯(和光純藥工業公司製造之TRIAM7〇5)、均苯四甲酸三 烯丙酯(和光純藥工業公司製造之TRIAM805)、氧雙鄰苯 136993.doc •64· 200940601 一酸二烯丙酯、磷酸三烯丙酯、亞磷酸三烯丙酯、檸檬 酸二烯丙酯。該等化合物可單獨使用或混合使用。 作為含甲氧基之化合物,可列舉以下化合物: [化 87] 〇The blending amount in the case of the component containing the hot cross-linking agent can be based on the cross-linking effect, the deformation of the pattern in the heat treatment after development, and the allowable range of the residue generated during development. The amount of the most suitable addition is selected in combination with respect to 1 part by mass of the (4) volume-sensitive resin, preferably 0.5 to 50 parts by mass, more preferably Μ by mass: (F) selected from the group consisting of acrylic vinegar compounds a compound of the methacrylic acid lysate compound, a methoxy group-containing compound, or at least one compound of the group, which is composed of the compound of the present invention, may contain the above compound (F) in relation to The type and molecular weight of the polymer are varied to determine the dissolution rate, and the display can be carried out in a precise development time range. 136993.doc • 62· 200940601 The acrylate compound and the methacrylate compound are selected from the group consisting of acrylates and oximes. A compound of the group consisting of acrylates, acrylamides, and methacrylamides. Specific examples of the preferred ones include: NK-ESTER series M-20G, M-40G, M-90G, M-230G, CB-1, SA, S, AMP-10G manufactured by Shin-Nakamura Chemical Industry Co., Ltd. AMP-20G, AMP-60G, AM-90G, A-SA, LA, 1G, 2G, 3G, 4G, 9G, 14G, 23G, BG, HD, NPG, 9PG, 701, BPE-100, BPE-200, BPE-500, BPE-1300, A-200, A-400, A-600, ❹ A-HD ' A-NPG ' APG-200 ' APG-400 ' APG-700 ' A-BPE-4, 701A, TMPT , A-TMPT, A-TMM-3, A-TMM-3L, A-TMMT, and LIGHT ESTER series manufactured by Kyoeisha Chemical Co., Ltd., E, NB, IB, EH, ID, L, L-5, L-7, TD, L-8, S, MC, 130MA ' 041MA 'CH, THF, BZ, PO, IB-X, HO, HOP, HOA, HOP-A, HOB, A, HO- MS, HO-HH, HO-MPP, G, P-1M, P-2M, EG, 2EG, 1.4BG, 1.6HX, o 1.9ND, TMP, G-101P, G-201P, BP-2EM, TB, IS, MTG, BO, CL, 3EG, 4EG, 9EG, MEG, NP, M-3F, M_4F, M-6F, FM-108, 1.3BG, 1.10DC. Further, LIGHT ACRYLATE series IAA, LA, SA, BO-A, EC-A, MTG-A, 130A, DPM-A, PO-A, P-200A, NP_4EA, NP manufactured by Kyoeisha Chemical Co., Ltd. can be cited. -8EA, THF-A, IB-XA, HOA, HOP-A, M-600A, HOA-MS, HOA-MPE, 3EG-A, 4EG-A, 9EG-A, 14EG_A, NP-A, 136993.doc 63- 200940601 1.6HX-A, 1.9ND-A, DCP-A, BP-4EA, BP-4PA, TMP-A, TMP-6EO-3A, PE-3A, PE-4A, DPE-6A, BA-104 , BA-134, G-201P. In addition, EPOXY ESTER series M-600A, 40EM, 70PA, 200PA, 80MFA, 3002M, and 3002A manufactured by Kyoeisha Chemical Co., Ltd. can be cited. Also, ARONIX series PCT-101, M- manufactured by Toagosei Co., Ltd. 102, M-110, M-lll, M-113, M-117, M-120, ❹ Μ-208, Μ-210, Μ-211, Μ·215, Μ-220, Μ-225, Μ-233 ,Μ-240,Μ-245,Μ-260,Μ-270,Μ-305,Μ-309, Μ-310, Μ-315, Μ-320, Μ_350, Μ-360, Μ-400, Μ-408 Μ-450, Μ-5300, Μ-5400, Μ-5600, Μ-5700 ° Further, DMAEA, DMAPAA, DMAA, ACMO, ΝΙΡΑΜ, and DEAA manufactured by Xingren Company can be cited. These compounds may be used singly or in combination of two or more kinds thereof. Examples thereof include allyl-containing compounds, and examples thereof include allyl alcohol, allylanisole, allyl benzoate, and allyl cinnamate. Ν-allyloxyphthalimide, allyl phenol, allyl phenyl sulfone, allyl urea, diallyl phthalate, diallyl isophthalate, Diallyl terephthalate, diallyl maleate, diallyl isocyanurate, triallylamine, triallyl cyanurate, cyanuric acid Allyl ester, triallylamine, triallyl 1,3,5-benzenetricarboxylate, triallyl trimellitate (TRIAM7〇5 manufactured by Wako Pure Chemical Industries, Ltd.), pyromellitic acid III Allyl ester (TRIAM805 manufactured by Wako Pure Chemical Industries, Ltd.), Oxygen phthalate 136993.doc •64· 200940601 Diallyl monoacrylate, triallyl phosphate, triallyl phosphite, diallyl citrate ester. These compounds may be used singly or in combination. As the methoxy group-containing compound, the following compounds can be mentioned: [Chem. 87] 〇

och3Och3

ch3oCh3o

och3 ch3〇—^ y_ c_ch2-c—〇ch3 作為苯酯化合物,可列舉以下化合物: [化 88]Och3 ch3〇—^ y_ c_ch2-c—〇ch3 As the phenyl ester compound, the following compounds can be cited: [Chem. 88]

作為調配該等溶解抑制劑之情形時之調配量,相對於 1〇〇質量伤之(A)驗溶性樹脂,較好的是0.5〜50質量〇之 好的是1〜20質量份。若該抑制劑之調配量未滿i 更 ., 貝重 , 則無法獲得充分之溶解抑制效果;相反若超過50質、 136993.doc -65- 200940601 則於熱硬化時,該等溶解抑制劑蒸發氣散,殘膜率降低, 從而無法確保目標之硬化膜之臈厚。 ()於刀子内具有羧基之有機化合物(以下亦稱為酸 合物」) ❹ ❹ 為了提高敏感度,亦可添加於分子内具有幾基之有機化 具體而t,較好的是碳原子數為4〜20之叛酸化合 物’更好的是具有直鍵結構、支鏈或環式結構,該有機基 之碳數為6〜12。具體可列舉:山梨酸、月桂酸、肉豆謹 酸、己二酸、2·甲基·4·戊烯酸、"基·2.戊烯酸、2.甲 基冬戊稀酸、甲基-正戊酸、3_甲基正戊酸、4甲基·正 戊酸、2·乙基丁酸、庚酸、辛酸、正壬酸、異壬酸癸 酸、DL-白胺酸、2_庚稀酸、2.辛浠酸、2_壬稀酸、2-癸烯 酸、9·癸烯酸、2-十二烯酸、10-十-蝉酸、3-環己烯甲 酸、1_環己稀_3·甲酸、環己院羧酸、環戊基乙酸、環己基 乙:、環己基丙酸、4-環己烷丁酸、5-降宿烯-2-甲酸、對 大口香酸2,4-一羥基苯甲酸、3,5•二羥基苯甲酸、鄰甲 苯曱酸甲苯甲酸、對甲苯甲酸、鄰大菌香酸、間大菌 香酸對大茴香酸、水揚酸、2,4-二羥基苯甲酸、3,5-二 經基本甲酸、3-苯基乳酸、4-經基苯基乳酸、4-經基扁桃 酸、3,4_二經基扁桃酸、4_經基_3甲氧基扁桃酸、甲氧 基=_(1·萘基)丙酸、扁桃酸、2-苯乳酸、乙醯扁桃酸、α_ 甲氧基笨基乙酸等。於該等羧酸化合物中,就敏感度之提 高:顯影時圖案與基材之密著性較高之方面而言,尤其好 的疋間曱苯曱酸、α•甲氧基苯基乙酸。添加(G)羧酸化合 136993.doc -66 - 200940601 物之情形時之添加量較好的是5〜20質量份,進而較好的是 5〜1〇質量份。若羧酸化合物之調配量為5質量份以上,則 曝光部之顯影殘渣變少,敏感度亦提高,& ’與矽基板之 密著性亦良好。若為2G質量份以下,則硬化時所產生之膜 減少變少,硬化後之膜的拉伸延伸率良好。 (其他添加劑) ;本發明之感光性樹脂組合物中,視需要亦可添加染 料、界面活性劑、溶解促進劑。The blending amount in the case of dissolving the above-mentioned dissolution inhibitors is preferably from 1 to 20 parts by mass, based on 1 part by mass of the (A) dry-soluble resin. If the amount of the inhibitor is less than i., the weight of the shellfish will not obtain sufficient dissolution inhibition effect; on the contrary, if it exceeds 50 mass, 136993.doc -65- 200940601, the dissolution inhibitor will evaporate during thermal hardening. The air dispersion and the residual film rate are lowered, so that the thickness of the cured film of the target cannot be ensured. () An organic compound having a carboxyl group in the knives (hereinafter also referred to as an acid compound) ❹ ❹ In order to increase the sensitivity, it may be added to the organic compound having a plurality of groups in the molecule, and t is preferably a carbon atom. The 4 to 20 tarenic acid compound 'better has a direct bond structure, a branched chain or a cyclic structure, and the organic group has a carbon number of 6 to 12. Specific examples thereof include: sorbic acid, lauric acid, myristic acid, adipic acid, 2·methyl·4·pentenoic acid, " keto-2-pentenoic acid; 2. methyl ampicillin, A Base-n-valeric acid, 3-methyl-n-valeric acid, 4-methyl-n-valeric acid, 2-ethylbutyric acid, heptanoic acid, octanoic acid, n-decanoic acid, isonanoic acid, DL-leucine, 2_heptic acid, 2. octanoic acid, 2_thick acid, 2-decenoic acid, 9-decenoic acid, 2-dodecenoic acid, 10-deca-decanoic acid, 3-cyclohexenecarboxylic acid , 1_cyclohexene_3·formic acid, cyclohexyl carboxylic acid, cyclopentyl acetic acid, cyclohexylethyl:, cyclohexylpropionic acid, 4-cyclohexanebutyric acid, 5-norbornene-2-carboxylic acid, For the big-mouth succinic acid 2,4-hydroxybenzoic acid, 3,5•dihydroxybenzoic acid, o-toluic acid toluic acid, p-toluic acid, o-columic acid, mesogenic acid to anisic acid, water Salicylic acid, 2,4-dihydroxybenzoic acid, 3,5-di-basic formic acid, 3-phenyllactate, 4-p-phenylphenyl lactic acid, 4-aminolated mandelic acid, 3,4-diaminoglycan Acid, 4_ mercapto-3 methoxy mandelic acid, methoxy=_(1.naphthyl)propionic acid, mandelic acid, 2-phenyllactate, acetamidine mandelic acid, α_methoxyphenyl Acetic acid, etc. Among the carboxylic acid compounds, the sensitivity is improved: in the aspect of high adhesion between the pattern and the substrate during development, particularly good indolephthalic acid, α-methoxyphenylacetic acid. The addition amount of (G) carboxylic acid compound 136993.doc -66 - 200940601 is preferably 5 to 20 parts by mass, more preferably 5 to 1 part by mass. When the amount of the carboxylic acid compound is 5 parts by mass or more, the development residue in the exposed portion is reduced, the sensitivity is also improved, and the adhesion to the ruthenium substrate is also good. When the amount is 2 parts by mass or less, the film thickness at the time of curing is reduced, and the stretched elongation of the film after curing is good. (Other additives) In the photosensitive resin composition of the present invention, a dye, a surfactant, and a dissolution promoter may be added as needed.

❹ 右對上述添加劑加以進一步具體之闡述,則作為染料, 可列舉:甲基紫、結晶紫、孔雀綠等。 添加染料之情形時的添加量,相對於100質量份之(A)鹼 溶性樹脂較好的是0.01〜5質量份之範圍。 又’作為界面活性劑,可列舉:包含聚丙二醇、聚氧乙 烯月桂醚等聚二醇類或其衍生物之非離子系界面活性劑; FLU〇RAD(商品名,住友3财司製造)、MEGAFAC(商品 名大日本4墨化學工業公司製造)、几啊商品名, 元肖子A司製造)等氣系界面活性劑’· κρ⑷(商品名,信 越化學工業公司製造)、DM(商品名,公司製 k) GLANOLC商品名,共榮社化學公司製造)等有機石夕氧 、-界面活!·生劑,就並非氟之觀點而言,較好的是有機石夕氧 烧界面活性劑。 ''面活性劑之情形時的添加量,相對於〗00質量份 之⑷驗溶性樹脂較好的是GGi〜5f量份之範圍。 又,作為溶解促進劑,較好的是具有紛性經基之化合 136993.doc •67- 200940601 物例如可列舉:雙酚、MtrisPC、MtetraPC等直鏈狀酚 物(本研化學工業公司製造);TrisP-HAP、TrisP-4 TnsP-PA等非直鍵狀酚化合物(本州化學工業公司 ^ 5正己基間笨二酚、將二苯基甲烷之苯基的2〜5個 氫原子取代為經基之化合物、將3,3_二苯基丙炫之苯基的 1〜5個氫原子取代為經基之化合物、雙(3-胺基-4-經苯基) 碾與丨,2-環己基二羧酸酐之丨對2反應物等。 添加/合解促進劑之情形時的添加量,相對於1 〇〇質量份 〇 之(A)鹼溶性樹脂較好的是0.5〜20質量份之範圍。 〈負型感光性樹脂組合物&gt; 於本發明之(A)鹼溶性樹脂中,可藉由含有(H)藉由照射 活性光線而產生酸之化合物 '及(1)藉由酸之作用可交聯之 化σ物而製作負型感光性樹脂組合物。以下加以詳細說 明。 (Η)藉由照射活性光線而產生酸之化合物 〇 本發明中所使用之(Η)藉由照射活性光線而產生酸之化 合物係藉由照射活性光線而產生酸之化合物,作為該化合 物,例如可列舉以下化合物。 G二氣甲基·均三喷類 一(2,4,6-二氣甲基)-均二_、2-苯基-雙(4,6-三氯曱基)_ 均二畊、2-(3-氣苯基)-雙(4,6-三氣甲基)_均三啡、2_(2_氣 苯基)-雙(4,6-三氯甲基)-均三啡、2-(4-甲氧基苯基)_雙 (4,6-三氣甲基)均三畊、2_(3_曱氧基苯基)_雙(4,6_三氣甲 基)-均二畊、2-(2-甲氧基苯基)_雙(4,6-三氣甲基)_均三 136993.doc -68- 200940601 p井、2-(4-曱基嗟吩基)-雙(4,6-三氣甲基)_均三p井、2_(3-甲 基嚷吩基)雙(4,6-三氣曱基-均三p井、2-(2 -曱基嘴吩基)_雙 (4,6-三氣甲基)-均三畊、2-(4-甲氧基萘基)_雙(4,6_三氣甲 基)-均三畊、2-(3-甲氧基萘基)-雙(4,6-三氣曱基)_均三 畊、2-(2-甲氧基萘基)-雙(4,6-三氣甲基)_均三喷、2_ (3,4,5-三甲氧基-々-苯乙烯基)-雙(4,6-三氣甲基)_均三哨:、 2-(4-曱基硫代-炔苯乙烯基)_雙(4,6-三氣甲基)_均三,井、2· (3-甲基硫代·弟苯乙烯基)-雙(4,6·三氣曱基)·均三畊、2_(2_ © 曱基硫代苯乙烯基)-雙(4,6-三氣曱基)_均三,井等。 ii) 二烯丙基錤類 二苯基鎭四氟硼酸鹽、二苯基錤四氟磷酸鹽、二苯基銷 四氟砷酸鹽、二苯基錤三氟甲烷磺酸鹽、二苯基錤三氟乙 酸鹽、二苯基錤對甲苯磺酸鹽、4_曱氧基苯基苯基鎭四氟 棚酸鹽、4-甲氧基苯基苯基錤六氟膦酸鹽、‘甲氧基苯基 苯基錤六氟砷酸鹽、4_甲氧基苯基苯基錤三氟甲烷磺酸 0、4-甲氧基笨基苯基錢三氟乙酸鹽、心甲氧基苯基苯基 鎖-對甲苯續酸鹽、雙(4_第三丁基苯基你四氣蝴酸鹽、雙 (4-第三丁基苯基)鐄六氟砷酸鹽、雙(4_第三丁基苯基)錤三 氟甲烧績酸鹽、雙(4_第三丁基苯基)鐵三氣乙酸鹽、雙⑷ 第三丁基苯基)鑷-對甲苯磺酸鹽等。 iii) 三烯丙基錡鹽類 一苯基銃四氟硼酸鹽、三苯基銃六氟膦酸鹽、三苯基銃 六氟珅酸鹽、三苯基疏甲料酸鹽、三苯錢三氣乙酸 鹽、三苯絲4甲苯磺酸鹽、4_甲氧基苯基二苯基疏四氣 I36993.doc •69· 200940601 蝴酸鹽、4- φ « ** Τ氧基本基一本基銃六氣膦酸鹽、4_甲氧基苯 基,笨基锍六氟珅酸鹽、4_甲氧基苯基二苯基疏甲院續酸 鹽4甲氧基笨基二苯基銃三氟乙酸鹽、4_甲氧基苯基二 苯,鎳-對甲苯磺酸鹽、4_笨基噻吩基二苯基四氟硼酸:、 4苯基塞吩基二苯基六氟膦酸鹽、4-苯基噻吩基二苯基六 象神酸鹽、4-苯基嗟吩基二笨基三氟甲烧續酸鹽、4_苯基 噻%基一笨基二氟乙酸鹽、4_苯基噻吩基二苯基-對甲苯 酸鹽等。 ❾ 於該等化合物中’作為三氣曱基·均三畊類,較好者可 列舉:2-(3-氣苯基)-雙(4,6-三氣甲基)_均三畊、2_(4_氣笨 基)·雙(4义三氣甲基)-均三喷、2_(4•甲基噻吩基)_雙(Μ 三氣甲基)·均三畊、2_(4_甲氧基苯乙烯基)雙(4,6-三氡 甲基)-均三畊、2-(4-甲氧基蔡基)_雙(4 6_三氯曱基)均三 畊等,作為二芳基錤鹽類,較好者可列舉:二苯基鐄三氟 乙酸鹽、二苯基錤三氟甲烷磺酸鹽、4甲氧基苯基笨基鑷 三氟甲烷磺酸鹽、4_甲氧基苯基苯基錤三氟乙酸鹽等;作 為三芳基疏鹽類,較好者可列舉:三苯基銃曱烷磺酸鹽、 三笨基錡三氟乙酸鹽、4-甲氧基笨基二苯基銕甲烷磺酸 鹽、4-甲氧基苯基二苯基錡三氟乙酸鹽、4_苯基噻吩基二 笨基二氟甲烷磺酸鹽、4-笨基噻吩基二苯基三氟乙酸酯 等。 除此以外,可使用以下所示之化合物。 (1)重氮甲酮化合物 作為重氮曱酮化合物,例如可列舉:1,3-二酮-2-重氮化 136993.doc -70. 200940601 合物、重氮苯醌化合物、 例,可列舉酚類之丨,夂蔡酿 (2)硬化合物 重氮萘酿化合物等,作為具體 二疊氮基-4-磺酸酯化合物。 作為硬化合物,例如, 化合物及該等化合物可二舉姻化合物、料酿- 舉…甲酿d氮,合物,作為具體例,可列 风米基笨甲醯甲基硬、雙(笨甲醯# 基磺醯基)甲烷等。 笑(本f醯甲 (3) 磺酸化合物❹ The above additives are further specifically described as the dye, and examples of the dye include methyl violet, crystal violet, and malachite green. The amount of addition in the case of adding a dye is preferably in the range of 0.01 to 5 parts by mass based on 100 parts by mass of the (A) alkali-soluble resin. Further, as the surfactant, a nonionic surfactant comprising a polyglycol such as polypropylene glycol or polyoxyethylene lauryl ether or a derivative thereof; FLU〇RAD (trade name, manufactured by Sumitomo 3); MEGAFAC (product name: Japan, 4 ink chemical industry company), a few product names, manufactured by Yuan Xiaozi A), etc., gas-based surfactants, κρ (4) (trade name, manufactured by Shin-Etsu Chemical Co., Ltd.), DM (trade name, Company system k) GLANOLC product name, manufactured by Kyoeisha Chemical Co., Ltd.) and other organic stone oxygen, - interface live! The green agent is preferably an organic stone oxide surfactant. The amount of the addition of the surfactant is preferably in the range of GGi to 5f by weight relative to 00 parts by mass of the (4) test-soluble resin. In addition, as a dissolution promoter, it is preferred to have a condensed radical 136993.doc • 67- 200940601, for example, a linear phenol such as bisphenol, MtrisPC or MtetraPC (manufactured by kenah chemical industry company) TrisP-HAP, TrisP-4 TnsP-PA and other non-straight-bonded phenolic compounds (the state chemical industry company ^ 5 n-hexyl stupid phenol, 2 to 5 hydrogen atoms of the phenyl group of diphenylmethane replaced by a compound of the group, wherein 1 to 5 hydrogen atoms of the phenyl group of 3,3-diphenylpropene are substituted with a trans group compound, bis(3-amino-4-phenyl group) and ruthenium, 2- Cyclohexyldicarboxylic anhydride, ruthenium 2 reactant, etc. The addition amount in the case of adding/dissolving the accelerator is preferably 0.5 to 20 parts by mass based on 1 part by mass of the (A) alkali-soluble resin. <Negative photosensitive resin composition> In the (A) alkali-soluble resin of the present invention, the compound which produces an acid by (H) by irradiation with active light can be used, and (1) by acid The negative-type photosensitive resin composition can be produced by cross-linking the sigma, and will be described in detail below. (Η) by irradiation activity A compound which generates an acid by a line, and a compound which generates an acid by irradiation with an active light is a compound which generates an acid by irradiation with an active light, and examples of the compound include the following compounds. Gas methyl group, uniform spray, one (2,4,6-dimethylmethyl)-homo-, 2-phenyl-bis(4,6-trichloroindenyl)_, two-plow, 2-( 3-oxophenyl)-bis(4,6-trimethylmethyl)_memenomorph, 2_(2_phenylphenyl)-bis(4,6-trichloromethyl)-meanstriene, 2- (4-methoxyphenyl)_bis(4,6-trimethylmethyl) are all ploughed, 2_(3_methoxyphenyl)-bis(4,6_trimethyl)-- Plowing, 2-(2-methoxyphenyl)_bis(4,6-trimethylmethyl)_Jingsan 136993.doc -68- 200940601 p well, 2-(4-mercaptopurenyl)- Bis(4,6-trimethylmethyl)_--------, 2-(3-methylnonphenyl) bis (4,6-tris)-------- Mouth phenyl)_bis(4,6-trimethylmethyl)-average three-plow, 2-(4-methoxynaphthyl)-bis(4,6_trimethylmethyl)-all three tillage, 2 -(3-methoxynaphthyl)-bis(4,6-trimethylsulfonyl)_uniform tillage, 2-(2-methoxynaphthyl)- (4,6-trimethylmethyl)_all three sprays, 2_(3,4,5-trimethoxy-anthracenyl)-bis(4,6-trimethylmethyl)_all three whistles: , 2-(4-mercaptothio-alkynylyl)-bis(4,6-trimethylmethyl)_-all, well, 2·(3-methylthio-diphenyl)- Double (4,6·three gas sulfhydryl)·all three tillage, 2_(2_© fluorenyl thiostyryl)-bis (4,6-trimethyl fluorenyl) _ all three, well and so on. Ii) diallyldiphenylphosphonium tetrafluoroborate, diphenylphosphonium tetrafluorophosphate, diphenyl pin tetrafluoroarsenate, diphenylsulfonium trifluoromethanesulfonate, diphenyl錤Trifluoroacetate, diphenylphosphonium p-toluenesulfonate, 4-methoxyphenylphenylphosphonium tetrafluorophosphonate, 4-methoxyphenylphenylphosphonium hexafluorophosphonate, 'A Oxyphenylphenyl sulfonium hexafluoroarsenate, 4-methoxyphenylphenyl fluorene trifluoromethanesulfonic acid 0, 4-methoxyphenylphenyl trifluoroacetate, cardiomethoxybenzene Phenyl phenyl-p-toluene sulphate, bis(4_t-butylphenyl ruthenium sulfonate, bis(4-t-butylphenyl)phosphonium hexafluoroarsenate, double (4_ Tert-butylphenyl) fluorene trifluoromethane acid anhydride, bis(4_t-butylphenyl)iron trigas acetate, bis(4) tert-butylphenyl)phosphonium-p-toluenesulfonate, etc. . Iii) triallyl sulfonium salt monophenylphosphonium tetrafluoroborate, triphenylsulfonium hexafluorophosphonate, triphenylsulfonium hexafluoroantimonate, triphenyl sulfonate, triphenylene Tri-gas acetate, triphenyl wire 4 toluene sulfonate, 4-methoxyphenyl diphenyl hydride four gas I36993.doc •69· 200940601 pharcinate, 4- φ « ** oxime base Lithium hexafluorophosphonate, 4-methoxyphenyl, phenyl hexafluoroantimonate, 4-methoxyphenyl diphenyl sulfonate, 4 methoxy phenyl diphenyl铳Trifluoroacetate, 4-methoxyphenyl diphenyl, nickel-p-toluenesulfonate, 4-phenylthiophene diphenyltetrafluoroborate: 4 phenylsexyl diphenyl hexafluorophosphine Acid salt, 4-phenylthienyldiphenylhexahydrate, 4-phenylnonyldiphenyl trifluoromethaneate, 4-phenylthiophene-phenylidene difluoroacetate 4_Phenylthienyldiphenyl-p-toluate or the like. ❾ In these compounds, 'as a tri-gas sulfhydryl group · three tillage, preferably 2-(3-phenylphenyl)-bis(4,6-trimethylmethyl)_ 2_(4_气笨基)·双(4义三气methyl)-all three sprays, 2_(4•methylthienyl)_double (Μ三气methyl)·all three tillage, 2_(4_ Methoxystyryl) bis(4,6-trimethyl)-three-till, 2-(4-methoxytyl)-bis(4 6_trichloroindenyl) are all cultivated in three ways, Preferred examples of the diarylsulfonium salt include diphenylsulfonium trifluoroacetate, diphenylsulfonium trifluoromethanesulfonate, and 4-methoxyphenylphosphonium trifluoromethanesulfonate. 4-methoxyphenylphenylhydrazine trifluoroacetate or the like; as the triaryl salt, preferably triphenylsulfonium sulfonate, triphenylsulfonium trifluoroacetate, 4- Methoxyphenyldiphenylphosphonium methanesulfonate, 4-methoxyphenyldiphenylphosphonium trifluoroacetate, 4-phenylthiophenyldiphenyldifluoromethanesulfonate, 4-phenyl Thienyl diphenyl trifluoroacetate and the like. In addition to the above, the compounds shown below can be used. (1) Diazo ketone compound As the diazonium ketone compound, for example, 1,3-diketone-2-diazide 136993.doc -70. 200940601 compound, diazonium benzoate compound, and example, The phenolic oxime, 夂Cai (2) hard compound diazo naphthalene compound, etc. are listed as specific diazido-4-sulfonate compounds. As a hard compound, for example, the compound and the compound can be a compound of a compound, a brewing--a kind of a nitrogen-containing compound, and as a specific example, it can be classified as a methylene-based, a soft, double (a醯# base sulfonyl) methane and the like. Laughing (this f 醯 ( (3) sulfonic acid compound

作為績酸化合物,例^^ _p =1咖 可列舉.烧基續酸輯類、南代烧 基磺酸酯類、芳基磺酸酯錮戍減 S類、亞胺基確酸醋類等0作為較 好之具體例,可列舉:安息香甲苯賴醋、鄰笨三齡三 (三氟甲料酸0旨)、鄰硝基f基三氟甲料酸_、鄰硝基 苄基對曱苯磺酸酯等。 (4) 磺醯亞胺化合物 作為磺醯亞胺化合物之具體例,例如可列舉:N_(三氟 曱基磺醯氧基)丁二醯亞胺、N_(三氟甲基磺醯氧基)鄰苯二 甲酿亞胺、N-(三氟曱基續酿氧基)二苯基順丁稀二酿亞 胺、N-(三氣甲基磺酿氧基)二環[2 21]庚_5_稀·2,3·二羧基 醯亞胺、Ν-(三氟甲基磺醯氧基)萘基醯亞胺等。 (5)肟酯化合物 2-[2-(4-曱基苯基磺醯氧基亞胺基)]_2,3_二氫噻吩_3•亞 基]_2_(2曱基苯基)乙腈(汽巴精化(Ciba Specialty Chemicals)公司,商品名「Irgacure pAG121」)、[2_(丙基 績醯氧基亞胺基)-2,3-二氫隹吩_3·亞基]_2_(2甲基苯基)乙 136993.doc 71 200940601 腈(&gt;飞巴精化公司,商品名「IrgacurepAGi〇3」)等。 (6)重氮甲烧化合物 作為重氮f烷化合物之具體例,例如可列舉:雙(= 甲基磺醢基)重氮甲烷、雙(環己基磺醯基)重氮甲烷、 (苯基磺醯基)重氮甲烷等。 化 ^ 尤其是就敏感度之觀點而言,較好的是上述(5)肟酯 合物。 (H)藉由照射活性光線而產生酸之化合物的添加旦, © 里,相 對於100質量份之含本發明之共聚物的耐熱性聚合物,較 好的是0.5〜20質量份。若該添加量為〇5質量份以上,則藉 由照射活性光線而產生之酸之量變得充分,敏感度提高, 若該添加量為20質量份以下,則硬化後之機械物性不會下 降。 (I)藉由酸之作用可交聯之化合物 以下,對(I)藉由酸之作用可交聯之化合物加以說明。若 ❹添加(I)藉由酸之作用可交聯之化合物,則對塗膜進行加熱 硬化時,可交聯上述(A)鹼溶性樹脂,或其本身可形成交 聯網狀物,因此可強化耐熱性。 (I)藉由酸之作用可交聯之化合物成分較好的是選自1^位 經經曱基或烷氧基甲基所取代之三聚氰胺樹脂及其單體、 以及尿素樹脂及其單體。作為該等之例,可列舉:烷氧基 曱基化三聚氰胺樹脂、烷氧基甲基化苯代三聚氰胺樹脂、 院氧基甲基化甘脲樹脂、烷氧基甲基化尿素樹脂、及該等 之單體。於該等之中,烷氧基甲基化三聚氰胺樹脂、烷氧 136993.doc •72· 200940601 基甲基化苯代三聚氰胺樹脂、烷氧基甲基化甘脲樹脂、烷 氧基曱基化尿素樹脂、及該等之單體可藉由如下方法而獲 得:將所對應之公知之羥曱基化三聚氰胺樹脂、羥曱基化 苯代三聚氰胺樹脂、羥甲基化尿素樹脂、及其單體之羥曱 基變更為烷氧基甲基。 關於該烷氧基曱基之種類,例如可列舉:甲氧基曱基、 乙氧基甲基、丙氧基甲基、丁氧基甲基等,可較好地使 用:實際應用方面所市售之SAIMERU300、301、303、 ❹ 370、325、327、701、266、267、238、1141、272、 202 、 1156 、 1158 、 1123 、 1170 、 1174 、 UFR65 、 300(MITSUI SCITECH 股份有限公司製造)、NIKALAC MX-270 ' -280 &gt; -290 ' NIKALAC MS-11 ' NIKALAC MW-30、-100、-300、-390、-750(三和化學(SANWA CHEMICAL)公司製造)等。該等化合物可單獨使用或混合 使用。 上述樹脂之單體亦用作交聯劑,例如可列舉:六曱氧基 Ο ^ 甲基三聚氰胺、二甲氧基甲基脲等。該等⑴藉由酸之作用 可交聯之化合物的添加量,相對於100質量份之(A)鹼溶性 樹脂較好的是3〜50質量份。若該添加量為3質量份以上, 則交聯充分進行,圖案化性變得良好,若該添加量為50質 量份以下,則可保持固化後之機械物性。 除此以外,於負型感光性樹脂組合物中,亦可視需要添 加於上述正型感光性樹脂組合物中所說明之(C)有機溶 劑、(D)接著助劑、(E)藉由熱而引起交聯反應之化合物、 136993.doc -73- 200940601 (其他添加劑)。 &lt;硬化起伏圖案之形成方法&gt; 以下表示使用本發明之感光性樹脂組合物於基板上形成 硬化起伏圖案之方法(以下亦稱為「本方法」)之一例。 首先,進行將該組合物以層或膜之形式形成於基板上之 塗布步驟。作為該基板,例如塗布於矽晶圓、陶瓷基板、 銘基板等。此時’為了提高所形成之起伏圖案與基板之接 著性,亦可預先於該基板上塗布矽烷偶合劑等接著助劑。 © 可藉由使用旋轉器之旋轉塗 布、使用噴塗器之喷霧塗布、浸潰、印刷、輥塗等進行。 繼而,於80〜140°C下進行預烘,使塗膜乾燥後,使用接 觸式對準機、鏡像投影曝光機、步進機等曝光裝置,經由 光罩,以化學線對該層或膜進行曝光,或進行對其直接照 射光線、電子線或離子線之曝光步驟。作為該化學線,可 使用X射線、電子束、紫外線、可見光線等,較好的是波 ^ 長為200〜50〇 nm者。於圖案之解析度及操作性方面,其光 源波長較好的是包含i線’更好的是單獨為丨線。作為曝光 裝置,尤其好的是接觸式對準機、鏡像投影曝光機、步進 機。 繼而’僅於負型感光性組合物之情形時進行曝光後,再 次以80〜14CTC加熱30秒〜600秒。將其稱為曝光後烘烤(以 下亦稱為PEB(Post Exposure Bake))。藉由該步爾,將藉由 曝光而產生之酸作為觸媒’曝光部之(I)藉由酸之作用 聯之化合物引起熱交聯反應,不溶於驗性水溶液。 136993.doc -74- 200940601 '而,於正型感光性組合物之情形時,進行以顯影液溶 出除去該曝光部之顯影步驟,於負塑感光性組合物之情形 時,進行以顯影液溶出除去該未曝光部之顯影步驟。顯影 方法可選自浸潰法'攪拌法、旋轉噴射法等方法。作為顯 影液,可使用:氫氧化鈉、碳酸鈉、矽酸鈉、氨水等無機 驗類;乙胺、二乙胺、三乙胺、三乙醇胺等有機胺類,•四 甲基氫氧化銨、四丁基氫氧化銨等四級銨鹽類等之水溶 及視需要添加適當量之甲醇、乙醇等水溶性有機溶劑 或界面活性劑而成之水溶液。其中,較好的是四甲基氫氧 化銨水溶液,其濃度為〇 5%〜1〇% ,進而較好的是 I.0%〜5%。進而,就通常用於半導體製造步驟中而言,: 其好的是2.38%。顯影後,利用淋洗液進行清洗除去顯 影液’藉此可獲得形成於基板上之起伏圖案。作為淋洗 液j可單獨或組合使用蒸顧水、甲醇、乙醇、異丙醇等。 最後,進行對以如上方式所得之驗溶性樹脂之起伏圖案 ◎ 進行加熱之加熱步驟。加熱溫度較好的是18〇它以上。通 常,加熱至25CTC〜40(TC,使添加劑成分中所含之耐熱性 較低之成分分解、氣散,同時經過脫水環化反應變更為聚 苯并喝唑,藉此可獲得耐熱性較高之起伏圖案。 作為上述加熱處理裝置,可使用加熱板、供箱、可設定 溫控程式之升溫式烘箱。作為進行加熱處理時之環境氣 體,可使用空氣’亦可使用氮、氬等惰性氣體…需要 以更低溫度進行熱處理時,亦可利用真空泉等,於減壓下 進行加熱。本發明之樹脂與先前之PB〇前驅物樹脂相比, 136993.doc 75- 200940601 能夠於250°C這一較低溫度下與聚苯并呤唑完成脫水環化 閉環反應’結果機械伸長率亦超過4〇〇/。。其於提高半導體 裝置之可靠性方面亦較好。 將上述硬化起伏圖案之形成方法與作為半導體裝置之緩 衝膜或層間絕緣膜之形成方法而公知之半導體裝置製造方 法加以組合’藉此可製造半導體裝置。 [實施例] 以下,藉由參考例、實施例及比較例,對本發明之實施 © 形態之例加以詳細說明。 &lt;參考例1 &gt; (雙(羧基)三環[5,2,1,〇2,6]癸烷之製造) 於安裝有TEFLON(註冊商標)製之錨型攪拌器的玻璃製 分離式三口燒瓶中,將三環[5,2,1,〇2,6]癸烷二甲醇(東京化 成工業公司製造)71.9 g(〇.366莫耳)溶解於乙腈i [而成 者,及於離子交換水1.4 L中溶解磷酸氫二鈉256 7 g(1 8〇8 Φ 莫耳)、磷酸二氫鈉217.i gd·809莫耳)而成者添加至反應 /合液中。向其中添加2,2,6,6-四曱基哌啶·丨-氧自由基(東京 化成工業公司製造,以下亦稱為「TEMp〇」)2 8以〇 〇179 莫耳),攪拌使其溶解。 以離子交換水850毫升將80%亞氯酸鈉143 2以丨267莫 耳)加以稀釋,並滴加至上述反應液中。繼而,以離子交 換水7毫升將5%二亞氣酸鈉水溶液37毫升加以稀釋,並滴 加至反應液中。藉由恆溫層將該反應液保持於35〜38C, 攪拌20小時,使其反應。 136993.doc -76- 200940601 反應後,將反應液冷卻至12°C,將在離子交換水300毫 升中溶解有亞硫酸鈉75 g而成之水溶液滴加至反應液中, 使過剩之亞氣酸鈉鈍化後,以500毫升之乙酸乙酯進行清 洗。其後,滴加10%鹽酸115毫升,將反應液之pH值調整 為3-4,利用傾析法回收沈澱物。將該沈澱物溶解於四氫 呋喃200毫升中。又,以500毫升之乙酸乙酯對水層進行2 次萃取後,以食鹽水進行清洗,同樣地將析出物溶解於四 氫呋喃溶液中。混合上述四氫呋喃溶液,以無水硫酸鈉使 〇 其乾燥。以蒸發器使該溶液濃縮、乾燥,藉此獲得雙(羧 基)三環[5,2,1,02’6]癸烷58.4 g(產率為71.1%)之白色結晶 物。 以1H-NMR、13C-NMR對所得之雙(羧基)三環[5,2,1,02’6] 癸烷進行解析,確認醇完全氧化成羧酸。將1H-NMR之結 果示於圖1中,將13C-NMR之結果示於圖2中。 將各自之NMR之測定條件記載如下。 I^H-NMR之測定條件] ® 裝置:Varian Merccury公司 MVX 300 MHz NMR 溶劑:DMSO-d6 測定溫度:室溫(25°C ) [13C-NMR之測定條件] 裝置·· BRUKER BIOSPIN股份有限公司製造之Avance 600 光譜儀 溶劑•使試樣以5質量°/◦溶解於γ- 丁内酯 NMR試樣管:套管(double pipe)(内管:以DMSO-d6作為洛 136993.doc -77- 200940601 克溶劑(lock solvent),外管:試樣溶液) 測定法:完全質子去偶法(proton decoupling) 累計次數:3000次 測定溫度:室溫(約25。〇 &lt;參考例2&gt; 於玻璃製之100毫升之三口燒瓶中,將5_胺基間苯二甲 酸(墨克(MERCK)公司製造)2.71 g(15毫莫耳)溶解於沁甲 基-2-吡咯啶酮30 g、吡啶2.37 g(30毫莫耳)中,並滴加溶 解於γ-丁内酯5.4 g中之氣甲酸乙酯(東京化成工業公司製 造)1.79 g(15.7毫莫耳將其冰浴冷卻至0它,以花費3〇分 鐘且不超過l〇°C之方式滴加溶解於γ _ 丁内酯15 g中之亞硫 醯乳5·35 g(45毫莫耳)。一面以不超過1〇。〇之方式進行冰 浴冷卻,一面攪拌1小時,然後恢復至室溫,使用真空 泵’餾去未反應之亞硫醢氣與副產物之亞硫酸氣體,從而 合成γ-胺基間苯二甲酸衍生物《將其作為反應液i。 &lt;參考例3&gt; 於玻璃製之分離式三口燒瓶中’將1,3-伸苯基二乙酸(東 京化成工業股份有限公司製造)19.42 g(l00毫莫耳)、;^_甲 基-2-吡咯啶酮(以下亦稱為「ΝΜΡ」)77 g、Ν,Ν-二甲基甲 醯胺2滴添加至反應容器中,使用TEFLON(註冊商標)製 之攪拌子與磁攪拌器進行攪拌,使其溶解。使用以乾冰冷 卻之甲醇浴,將該反應液冷卻至-7〜-15°C,並將亞硫酿氣 (東京化成工業股份有限公司製造)28.56 g(240毫莫耳)滴加 至反應液中,然後將反應容器浸於冰浴中,攪拌i小時。 136993.doc •78· 200940601 進而,使用真空泵,以30分鐘減壓餾去未反應之亞硫酿氣 與副產物之亞硫酸氣體,從而合成丨,3_伸苯基二乙酸衍生 物。將其作為反應液2。 &lt;參考例4&gt; 使用1,4-伸苯基二乙酸(東京化成工業股份有限公司製 造)19.80 g(115毫莫耳),取代參考例3之13·伸苯基二乙酸 (東厅、化成工業股份有限公司製造)19 42 g(1〇〇毫莫耳),進 行與參考例3相同之操作,從而合成丨,4_伸苯基二乙酸衍生 物。將其作為反應液3。 &lt;參考例5&gt; 使用玻璃製之三口燒瓶,將丨,4·環己烷二甲酸(東京化成 工業股份有限公司製造)19.80 g(115毫莫耳)、丁内酯60 g、氣化苄基三乙胺(東京化成工業股份有限公司製造)〇28 g(1.24毫莫耳)添加至反應容器中,使用tefl〇N(註冊商 標)製之攪拌子與磁攪拌器進行攪拌’使其溶解。將反應 容器浸於冰浴中’冷卻至3〜5 eC,並將亞硫醯氯32.84 g(276毫莫耳)滴加至反應液中,然後擾拌3〇分鐘。進而, 使用真空泵,以30分鐘減壓餾去未反應之亞硫醯氣與副產 物之亞硫酸氣體,從而合成1,4-環己烧二甲酸衍生物。將 其作為反應液4。 〈參考例6&gt; 於附有擾拌機、滴液漏斗及溫度計之1 L分離式燒瓶 中’使用4,4’-(1-(2-(4 -經基苯基)-2-丙基)苯基)亞乙基)雙 盼(本州化學工業公司製造,商品名為Tris-PA)之化合物30 136993.doc -79· 200940601 g(0.071莫耳)作為聚羥基化合物,將相當於該基之μ 3 莫耳%之量的1,2-萘醌二疊氮基_4_磺醯氣47 4 9g(〇.m莫 耳)攪拌溶解於丙關〇 g中,然後利用恆溫槽,將燒瓶調 整至30C。繼而,於丙酮18 g中溶解三乙胺179 添加 至滴液漏斗後,以3〇分鐘將其滴加至燒瓶中。滴加結束後 進而繼續授拌30分鐘,其後滴加鹽酸,進而授拌分鐘, 結束反應。其後進行過濾,除去三乙胺鹽酸鹽。一面攪拌 此處所得之濾液,一面將其滴加至混合攪拌有純水164〇吕 Ο 與鹽酸30 g之3 l燒杯中,從而獲得析出物。對該析出物進 行水洗、過濾後,於4(TC減壓下乾燥48小時,獲得感光劑 (PAC-1)。 &lt;參考例7&gt; 使用安裝有TEFLON(註冊商標)製之錨型攪拌器的玻璃 製之分離式三口燒瓶作為反應容器。於反應容器中,添加 二碳酸二-第三丁酯131.0 g與γ - 丁内酯780 g,於室溫下緩 緩滴加在室溫下混合3-胺基丙基三乙氧基矽烷132·8 g與 丁内酯270 g而成之溶液。隨著滴加,反應液發熱至約 40°C。又,確認隨著反應,產生碳酸氣體。滴加結束後, 以室溫攪拌2小時,然後利用高效液相層析法(HpLC)對反 應液進行確5¾,結果元全未檢測出原料,生成物檢測為單 一峰值,純度為98%。以如上方式獲得接著助劑溶液(D_ 1)。 &lt;參考例8&gt; 於附有攪拌機、滴液漏斗及溫度計之丨L分離式燒瓶 136993.doc -80 - 200940601 中,使用4,4·-(1-(2-(4-羥基苯基)-2-丙基)苯基)亞乙基)雙 酚(本州化學工業公司製造,商品名為Tris_PA)之化合物3〇 g(0.071莫耳)作為聚羥基化合物,將相當於該〇H基之3 莫耳%之量的1,2-萘醌二疊氮基-5-續醮氣47.49 g(0.177莫 耳)攪拌溶解於丙酮300 g中,然後利用恆溫槽將燒瓶調整 至30°C。繼而’於丙酮18 g中溶解三乙胺179 g,並添加 至滴液漏斗,然後以30分鐘將其滴加至燒瓶中。滴加結束 後,進而繼續攪拌30分鐘,其後滴加鹽酸,進而攪拌3〇分 鐘,結束反應。其後進行過濾,除去三乙胺鹽酸鹽。一面 攪拌此處所得之濾液,一面將其滴加至混合攪拌有純水 “40 g與鹽酸30 §之儿燒杯中,從而獲得析出物。對該析 出物進行水洗、過濾後,於4(TC減壓下乾燥48小時,獲得 感光劑(PAC-2)。 &lt;參考例9&gt; 於附有攪拌機、滴液漏斗及溫度計之5〇〇 mL之三口燒瓶 中,添加鄰苯二甲酸酐14.813 莫耳)、作為溶劑之 gbl(y-丁内酯)147 8 g並進行攪拌,利用恆溫槽將燒瓶調 整至30C。將7-胺基丙基三乙氧基矽烷2214 g(〇i莫耳) 添加至滴液漏斗後,以30分鐘將其滴加至燒瓶中,於室溫 下攪拌12小時,從而獲得接著助劑(D-2)。 &lt;參考例10&gt; 於附有攪拌機、滴液漏斗及溫度計之5〇〇 mL之三口燒瓶 中添加3,3',4,4'-二笨甲酮四甲酸二酐16.11 g(〇 〇5莫 耳)、作為溶劑之GBL〇y_ 丁内酯)153 g並進行攪拌利用恆 136993.doc 200940601 溫槽將燒瓶調整至30。卜將丫·絲丙基三乙氧基㈣Μ Μ g(〇.i莫耳)添加至滴液漏斗後,以3G分鐘將其滴加至燒瓶 中,於室溫下攪拌12小時,從而獲得接著助劑(D_3)。 &lt;參考例11 &gt;As an acid-compounding compound, examples ^^ _p =1 coffee can be enumerated. Burning base acid series, southern ketone sulfonate, aryl sulfonate minus S type, imine acid vinegar, etc. As a preferable specific example, benzoin toluene vinegar, succinct three-in-three (trifluoromethane acid), o-nitrof-trifluoromethane _, o-nitrobenzyl ruthenium Benzene sulfonate and the like. (4) Sulfonimide compound Specific examples of the sulfonimide compound include, for example, N-(trifluoromethylsulfonyloxy)butaneimine and N-(trifluoromethylsulfonyloxy). O-xylyleneimine, N-(trifluoromethylsulfonyloxy)diphenyl cis-butane di-imine, N-(trimethylsulfonyloxy)bicyclo[2 21]g _5_ dilute 2,3. dicarboxy quinone imine, fluorene-(trifluoromethylsulfonyloxy) naphthyl quinone imine, and the like. (5) oxime ester compound 2-[2-(4-mercaptophenylsulfonyloxyimino)]_2,3_dihydrothiophene_3•ylidene]_2_(2-decylphenyl)acetonitrile ( Ciba Specialty Chemicals, Inc., trade name "Irgacure pAG121"), [2_(propyl hydroxy methoxyimino)-2,3-dihydro porphin _3·subunit]_2_(2 Methylphenyl) B 136993.doc 71 200940601 Nitrile (&gt; Feiba Refinery, trade name "Irgacurep AGi〇 3") and the like. (6) Diazomethane-sintering compound Specific examples of the diazo-f-alkane compound include bis(=methylsulfonyl)diazomethane, bis(cyclohexylsulfonyl)diazomethane, and (phenyl) Sulfhydryl) diazomethane and the like. In particular, from the viewpoint of sensitivity, the above (5) oxime ester compound is preferred. (H) The addition of a compound which generates an acid by irradiation with active light is preferably 0.5 to 20 parts by mass based on 100 parts by mass of the heat-resistant polymer containing the copolymer of the present invention. When the amount is 5% by mass or more, the amount of the acid generated by the irradiation of the active light is sufficient, and the sensitivity is improved. When the amount is 20 parts by mass or less, the mechanical properties after curing are not lowered. (I) Compound which can be crosslinked by the action of an acid Hereinafter, the compound which can be crosslinked by the action of an acid will be described. When (I) a compound which can be crosslinked by the action of an acid is added, when the coating film is heat-hardened, the (A) alkali-soluble resin may be cross-linked, or the network itself may be formed, thereby strengthening Heat resistance. (I) The compound component which can be crosslinked by the action of an acid is preferably a melamine resin selected from the group consisting of a mercapto group or an alkoxymethyl group and a monomer thereof, and a urea resin and a monomer thereof. . Examples of such an alkoxylated melamine resin, an alkoxymethylated benzene melamine resin, a hospital oxymethylated glycoluril resin, an alkoxymethylated urea resin, and the like Wait for the monomer. Among these, alkoxymethylated melamine resin, alkoxy 136993.doc • 72· 200940601 methylated benzene melamine resin, alkoxymethylated glycol urea resin, alkoxylated urea The resin, and the monomers can be obtained by the following methods: a correspondingly known hydroxylated melamine resin, a hydroxylated phenyl melamine resin, a methylolated urea resin, and a monomer thereof The hydroxymethyl group is changed to an alkoxymethyl group. Examples of the type of the alkoxyfluorenyl group include a methoxyindenyl group, an ethoxymethyl group, a propoxymethyl group, and a butoxymethyl group, and can be preferably used: in practical applications. Sale of SAIMERU 300, 301, 303, 370 370, 325, 327, 701, 266, 267, 238, 1141, 272, 202, 1156, 1158, 1123, 1170, 1174, UFR65, 300 (manufactured by MITSUI SCITECH Co., Ltd.) , NIKALAC MX-270 '-280 &gt; -290 'NIKALAC MS-11 'NIKALAC MW-30, -100, -300, -390, -750 (made by SANWA CHEMICAL). These compounds may be used singly or in combination. The monomer of the above resin is also used as a crosslinking agent, and examples thereof include hexamethoxy Ο ^ methyl melamine, dimethoxymethyl urea, and the like. The amount of the compound which can be crosslinked by the action of the acid is preferably from 3 to 50 parts by mass based on 100 parts by mass of the (A) alkali-soluble resin. When the amount is 3 parts by mass or more, the crosslinking is sufficiently performed, and the patterning property is improved. When the amount is 50 parts by mass or less, the mechanical properties after curing can be maintained. In addition, in the negative photosensitive resin composition, (C) an organic solvent, (D) an auxiliary agent, and (E) may be added to the positive photosensitive resin composition as needed. And the compound causing the crosslinking reaction, 136993.doc -73- 200940601 (other additives). &lt;Method of Forming Curing Rough Pattern&gt; An example of a method of forming a hardened relief pattern on a substrate (hereinafter also referred to as "the present method") using the photosensitive resin composition of the present invention is shown below. First, a coating step of forming the composition on a substrate in the form of a layer or a film is carried out. The substrate is applied, for example, to a tantalum wafer, a ceramic substrate, a substrate, or the like. At this time, in order to improve the adhesion between the formed undulating pattern and the substrate, a bonding aid such as a decane coupling agent may be applied to the substrate in advance. © can be carried out by spin coating using a spinner, spray coating using a sprayer, dipping, printing, roll coating, and the like. Then, pre-baking is performed at 80 to 140 ° C, and after the coating film is dried, the layer or film is chemically lined through a mask using an exposure device such as a contact aligner, a mirror projection exposure machine, or a stepper. Exposure is performed, or an exposure step is performed in which light, electron lines or ion lines are directly irradiated. As the chemical line, X-rays, electron beams, ultraviolet rays, visible rays, or the like can be used, and those having a wave length of 200 to 50 Å are preferable. In terms of the resolution and operability of the pattern, the wavelength of the light source is preferably such that the i-line is more preferably a twisted line. As the exposure means, a contact aligner, a mirror projection exposure machine, and a stepper are particularly preferable. Then, after the exposure was carried out only in the case of the negative photosensitive composition, it was further heated at 80 to 14 CTC for 30 seconds to 600 seconds. This is called post-exposure bake (hereinafter also referred to as PEB (Post Exposure Bake)). By this step, the acid generated by the exposure is used as the catalyst 'exposure portion. (I) The compound which is linked by the action of the acid causes a thermal crosslinking reaction, and is insoluble in the aqueous test solution. 136993.doc -74- 200940601 'In the case of a positive photosensitive composition, a developing step of eluting and removing the exposed portion by a developing solution is performed, and in the case of a negative photosensitive photosensitive composition, dissolution is carried out with a developing solution The developing step of the unexposed portion is removed. The developing method may be selected from a dipping method such as a stirring method or a rotary jet method. As the developer, inorganic tests such as sodium hydroxide, sodium carbonate, sodium citrate, and ammonia water; organic amines such as ethylamine, diethylamine, triethylamine, and triethanolamine, and tetramethylammonium hydroxide can be used. An aqueous solution obtained by adding a suitable amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant to a quaternary ammonium salt such as tetrabutylammonium hydroxide or the like. Among them, a tetramethylammonium hydroxide aqueous solution having a concentration of 〇 5% to 1% by weight, more preferably from 1.0% to 5%, is preferred. Further, as far as it is generally used in the semiconductor manufacturing step, it is preferably 2.38%. After development, the developing solution is removed by washing with an eluent, whereby an undulating pattern formed on the substrate can be obtained. As the eluent j, water, methanol, ethanol, isopropyl alcohol or the like can be used alone or in combination. Finally, a heating step of heating the undulating pattern of the test resin obtained in the above manner is carried out. The heating temperature is preferably 18 〇 or more. Usually, it is heated to 25 CTC to 40 (TC), and the component having low heat resistance contained in the additive component is decomposed and dispersed, and is changed to polyphenylene and oxazole by a dehydration cyclization reaction, whereby heat resistance is obtained. As the heat treatment device, a heating plate, a supply box, and a temperature-increasing oven capable of setting a temperature control program can be used. As the ambient gas for heat treatment, air can be used, and an inert gas such as nitrogen or argon can also be used. When it is necessary to heat-treat at a lower temperature, it may be heated under reduced pressure using a vacuum spring or the like. The resin of the present invention can be compared with the prior PB 〇 precursor resin, 136993.doc 75- 200940601 at 250 ° C At this lower temperature, the polybenzoxazole completes the dehydration and cyclization ring closure reaction, and the mechanical elongation is also more than 4 Å. It is also better in improving the reliability of the semiconductor device. The formation method is combined with a known semiconductor device manufacturing method as a buffer film of a semiconductor device or a method of forming an interlayer insulating film, whereby a semiconductor device can be manufactured. EXAMPLES Hereinafter, examples of the embodiment of the present invention will be described in detail by way of Reference Examples, Examples and Comparative Examples. <Reference Example 1 &gt; (Bis(carboxy)tricyclo[5,2,1,〇 2,6] Manufacture of decane) In a glass separation three-necked flask equipped with an anchor stirrer manufactured by TEFLON (registered trademark), tricyclo[5,2,1,〇2,6]decane II was used. Methanol (manufactured by Tokyo Chemical Industry Co., Ltd.) 71.9 g (〇.366 mol) dissolved in acetonitrile i [original, and dissolving disodium hydrogen phosphate 256 7 g in ion exchange water 1.4 L (1 8 〇 8 Φ Moule) ), sodium dihydrogen phosphate 217.i gd·809 mol) was added to the reaction/liquid mixture. 2,2,6,6-tetramethylenepiperidine·丨-oxyl radical (manufactured by Tokyo Chemical Industry Co., Ltd., hereinafter referred to as "TEMp〇") was added thereto, and 搅拌 179 rm was added thereto. It dissolves. It was diluted with 850 ml of ion-exchanged water (80% sodium chlorite 143 2 as 丨267 mol), and added dropwise to the above reaction liquid. Then, 37 ml of a 5% aqueous sodium disulfite solution was diluted with 7 ml of ion exchange water, and added dropwise to the reaction liquid. The reaction solution was kept at 35 to 38 C by a constant temperature layer, and stirred for 20 hours to cause a reaction. 136993.doc -76- 200940601 After the reaction, the reaction solution was cooled to 12 ° C, and an aqueous solution obtained by dissolving 75 g of sodium sulfite in 300 ml of ion-exchanged water was added dropwise to the reaction liquid to make excess sodium sulfite. After passivation, it was washed with 500 ml of ethyl acetate. Thereafter, 115 ml of 10% hydrochloric acid was added dropwise, and the pH of the reaction mixture was adjusted to 3-4, and the precipitate was recovered by decantation. The precipitate was dissolved in 200 ml of tetrahydrofuran. Further, the aqueous layer was extracted twice with 500 ml of ethyl acetate, and then washed with brine, and the precipitate was dissolved in a tetrahydrofuran solution in the same manner. The above tetrahydrofuran solution was mixed, and dried over anhydrous sodium sulfate. The solution was concentrated and dried with an evaporator, whereby 58.4 g of bis(carboxy)tricyclo[5,2,1,02'6]decane (yield: 71.1%) of white crystals was obtained. The obtained bis(carboxy)tricyclo[5,2,1,02'6]nonane was analyzed by 1H-NMR and 13C-NMR, and it was confirmed that the alcohol was completely oxidized to a carboxylic acid. The results of 1H-NMR are shown in Fig. 1, and the results of 13C-NMR are shown in Fig. 2. The measurement conditions of each NMR are described below. I^H-NMR measurement conditions] ® Device: Varian Merccury MVX 300 MHz NMR Solvent: DMSO-d6 Measurement temperature: room temperature (25 ° C) [13C-NMR measurement conditions] Device·· BRUKER BIOSPIN Co., Ltd. Manufacturing Avance 600 spectrometer solvent • Dissolve the sample at 5 mass ° / ◦ in the γ-butyrolactone NMR sample tube: double pipe (inner tube: DMSO-d6 as Luo 136993.doc -77- 200940601 gram solvent (lock solvent), outer tube: sample solution) Determination method: complete proton decoupling method cumulative number: 3000 times measurement temperature: room temperature (about 25. 〇 &lt; reference example 2 &gt; in glass In a 100-mL three-necked flask, 2.71 g (15 mmol) of 5-aminoisophthalic acid (manufactured by MERCK) was dissolved in 沁methyl-2-pyrrolidone 30 g, pyridine. 2.37 g (30 mmol), and dropwise addition of 1.93 g of gas formate (manufactured by Tokyo Chemical Industry Co., Ltd.) dissolved in 5.4 g of γ-butyrolactone (15.7 mmol was cooled to 0 in an ice bath) , adding sulfite emulsion 5 dissolved in 15 g of γ-butyrolactone in a manner of taking 3 〇 minutes and not exceeding l 〇 ° C 35 g (45 mmol). One side is cooled in an ice bath with no more than 1 Torr. While stirring for 1 hour, then returning to room temperature, the unreacted sulphur sulphur gas and by-products are distilled off using a vacuum pump. The sulfite gas is synthesized to synthesize a γ-aminoisophthalic acid derivative, which is referred to as a reaction liquid i. &lt;Reference Example 3&gt; In a separate three-necked flask made of glass, 1,3-phenylene Acetic acid (manufactured by Tokyo Chemical Industry Co., Ltd.) 19.42 g (100 mmol), ^_methyl-2-pyrrolidone (hereinafter also referred to as "ΝΜΡ") 77 g, Ν, Ν-dimethyl 2 drops of guanamine were added to the reaction vessel, and the mixture was stirred and dissolved with a stirrer made of TEFLON (registered trademark). The reaction solution was cooled to -7 to -15 using a methanol bath cooled with dry ice. °C, and 28.56 g (240 mmol) of sulphur gas (manufactured by Tokyo Chemical Industry Co., Ltd.) was added dropwise to the reaction liquid, and then the reaction vessel was immersed in an ice bath and stirred for 1 hour. 136993.doc •78· 200940601 Further, using a vacuum pump, the unreacted sub-distillation was distilled off under reduced pressure for 30 minutes. Sulfur brewing gas and by-product sulfurous acid gas, thereby synthesizing hydrazine, 3-phenylene diacetate derivative, and using it as reaction liquid 2. <Reference Example 4> Using 1,4-phenylenediacetic acid (Tokyo) 19.80 g (115 mmol) manufactured by Huacheng Industrial Co., Ltd., in place of Reference Example 3, 13 phenylenediacetic acid (manufactured by Dong-Dong, Chemical Industry Co., Ltd.) 19 42 g (1 〇〇 millim) The same operation as in Reference Example 3 was carried out to synthesize a fluorene, 4-phenylene diacetate derivative. This was used as the reaction liquid 3. &lt;Reference Example 5&gt; Using a three-necked flask made of glass, 丨, 4·cyclohexanedicarboxylic acid (manufactured by Tokyo Chemical Industry Co., Ltd.), 19.80 g (115 mmol), butyrolactone 60 g, gasified benzyl Triethylamine (manufactured by Tokyo Chemical Industry Co., Ltd.) 〇28 g (1.24 mmol) was added to a reaction vessel, and stirred with a stirrer made of tefl〇N (registered trademark) and a magnetic stirrer to dissolve . The reaction vessel was immersed in an ice bath &lt;cooled to 3 to 5 eC, and 32.84 g (276 mmol) of sulfinium chloride was added dropwise to the reaction solution, followed by agitation for 3 minutes. Further, an unreacted sulfite gas and a by-product sulfurous acid gas were distilled off under reduced pressure for 30 minutes using a vacuum pump to synthesize a 1,4-cyclohexanedicarboxylic acid derivative. This was used as the reaction liquid 4. <Reference Example 6&gt; In the 1 L separation flask equipped with a scrambler, a dropping funnel, and a thermometer, '4,4'-(1-(2-(4-)-phenylphenyl)-2-propyl group was used. a compound of phenyl)ethylene) bis (manufactured by Honshu Chemical Industry Co., Ltd., trade name: Tris-PA) 30 136993.doc -79· 200940601 g (0.071 mol) as a polyhydroxy compound, which will be equivalent to the base The amount of μ 2 mol % of 1,2-naphthoquinonediazide 4 4 sulfonate 47 4 9 g (〇.m mol) is dissolved and dissolved in propylene g, and then using a thermostatic bath, The flask was adjusted to 30C. Then, triethylamine 179 was dissolved in 18 g of acetone and added to a dropping funnel, which was added dropwise to the flask over 3 minutes. After the completion of the dropwise addition, the mixing was further continued for 30 minutes, and then hydrochloric acid was added dropwise thereto, and the mixture was further mixed for a minute to complete the reaction. Thereafter, filtration was carried out to remove triethylamine hydrochloride. The filtrate obtained here was stirred while being added dropwise to a 3 l beaker which was mixed with pure water 164 〇 Ο and 30 g of hydrochloric acid to obtain a precipitate. The precipitate was washed with water and filtered, and dried under reduced pressure of 4 (TC) for 48 hours to obtain a sensitizer (PAC-1). &lt;Reference Example 7&gt; An anchor type stirrer equipped with TEFLON (registered trademark) was used. A separate three-necked flask made of glass was used as a reaction vessel. In the reaction vessel, 131.0 g of di-tert-butyl dicarbonate and 780 g of γ-butyrolactone were added, and the mixture was slowly added dropwise at room temperature at room temperature. a solution of 3-aminopropyltriethoxydecane 132·8 g and butyrolactone 270 g. The reaction solution was heated to about 40° C. with the addition, and it was confirmed that carbonic acid gas was generated along with the reaction. After the completion of the dropwise addition, the mixture was stirred at room temperature for 2 hours, and then the reaction liquid was confirmed by high performance liquid chromatography (HpLC). As a result, the starting material was not detected, and the product was detected as a single peak with a purity of 98%. The following auxiliary solution (D-1) was obtained in the above manner. &lt;Reference Example 8&gt; In a separate flask 136993.doc-80 - 200940601 with a stirrer, a dropping funnel and a thermometer, 4, 4· was used. -(1-(2-(4-hydroxyphenyl)-2-propyl)phenyl)ethylidene)bisphenol (Honzhou Chemical Industry) As a polyhydroxy compound, the compound (trade name: Tris_PA) is used as a polyhydroxy compound, and the amount of 1,2-naphthoquinonediazide-5 is equivalent to 3 moles of the oxime H group. - Continued helium gas 47.49 g (0.177 mol) was stirred and dissolved in 300 g of acetone, and then the flask was adjusted to 30 ° C using a thermostatic bath. Then, 179 g of triethylamine was dissolved in 18 g of acetone, and added to a dropping funnel, which was then added dropwise to the flask over 30 minutes. After the completion of the dropwise addition, the stirring was further continued for 30 minutes, and then hydrochloric acid was added dropwise thereto, and the mixture was further stirred for 3 minutes to complete the reaction. Thereafter, filtration was carried out to remove triethylamine hydrochloride. The filtrate obtained here was stirred while being added dropwise to a beaker of pure water "40 g and hydrochloric acid 30 § to obtain a precipitate. The precipitate was washed with water, filtered, and then dried at 4 (TC). The film was dried under reduced pressure for 48 hours to obtain a sensitizer (PAC-2). &lt;Reference Example 9&gt; In a 5-liter flask equipped with a stirrer, a dropping funnel and a thermometer, phthalic anhydride was added. Ear), gbl (y-butyrolactone) 147 8 g as a solvent and stirred, and the flask was adjusted to 30 C using a thermostatic bath. 7-Aminopropyltriethoxydecane 2214 g (〇i Mo) After the addition to the dropping funnel, it was added dropwise to the flask over 30 minutes, and stirred at room temperature for 12 hours to obtain a secondary auxiliary (D-2). <Reference Example 10> Agitator, drip was attached Add 3,3',4,4'-dimercapto ketone tetracarboxylic dianhydride 16.11 g (〇〇5 mol) to the 5 〇〇mL three-neck flask of the funnel and thermometer, and use GBL〇y_butyrolactone as solvent. ) 153 g and stir using the constant 136993.doc 200940601 to adjust the flask to 30. 丫 丝 丝 propyl triethoxy (tetra) Μ After adding Μ g (〇.i mole) to the dropping funnel, it was added dropwise to the flask at 3 G minutes, and stirred at room temperature for 12 hours to obtain a subsequent auxiliary (D_3). Reference Example 11 &gt ;

於附有攪拌機、滴液漏斗及溫度計之5〇〇 mLi 口燒瓶 中,添加γ-胺基丙基三乙氧基矽烷22 14 g(〇丨莫耳)、作為 溶劑之GBL(ir-丁内醋)116.6 g並進行攪拌’利用恆溫槽將 燒瓶調整至3(TC。將異氰酸苯醋u.9 g(〇」莫耳)添加至滴 液漏斗後,以30分鐘將其滴加至燒瓶中,液溫上升至5〇 °C。於室溫下攪拌12小時後,獲得接著助劑(d_4)。 &lt;參考例12&gt; (雙(氣羰基)三環[5,2,1,02,6]癸烷之製造) 將參考例1中所得之雙(羧基)三環[5,2,1,〇2,6]癸烧625 g(278毫莫耳)、亞硫醯氣97毫升(1.33莫耳)、吼咬〇_4毫升 (5.〇毫莫耳)添加至反應容器中,於25〜50 °C下授拌18小 時’使其反應。反應結束後,添加曱苯,於減壓下使過剩 之亞硫酿氣與甲苯進行共沸,藉此進行濃縮,從而獲得油 狀之雙(氣羰基)三環[5,2,1,02,6]癸烷73.3§(產率為1〇〇。/0)。 關於所得之雙(氯羰基)三環[5,2,1,〇2’6]癸烷,以ιΗ_ NMR、13C-NMR進行解析,確認羧酸完全變成醯氯體《將 W-NMR之結果示於圖3中,將13C-NMR之結果示於圖4 中。各個NMR之測定條件如下所述。 之測定條件]In a 5〇〇mLi flask with a stirrer, a dropping funnel and a thermometer, γ-aminopropyltriethoxydecane 22 14 g (〇丨莫耳), GBL as a solvent (ir-butin) Vinegar) 116.6 g and stirring 'Adjust the flask to 3 (TC. Add the isocyanate benzene vinegar u.9 g (〇) molar) to the dropping funnel, and add it to the dropping funnel for 30 minutes. In the flask, the liquid temperature was raised to 5 ° C. After stirring at room temperature for 12 hours, a subsequent auxiliary (d_4) was obtained. &lt;Reference Example 12&gt; (bis(gas carbonyl)tricyclo[5,2,1, 02,6] Manufacture of decane) The bis(carboxy)tricyclo[5,2,1,〇2,6] obtained in Reference Example 1 was calcined with 625 g (278 mmol) and sulfoxide. ML (1.33 mol), 吼4 ml (5. 〇 millimolar) was added to the reaction vessel, and the mixture was stirred at 25 to 50 ° C for 18 hours to react. After the reaction, the benzene was added. The excess sulfite gas is azeotroped with toluene under reduced pressure to concentrate to obtain an oily bis(gas carbonyl)tricyclo[5,2,1,02,6]decane 73.3 § (Yield is 1 〇〇./0). About the obtained double (chlorine) Carbonyl)tricyclo[5,2,1,〇2'6]decane, which was analyzed by ιΗ_NMR and 13C-NMR, and confirmed that the carboxylic acid completely became a ruthenium chloride. The results of W-NMR are shown in Fig. 3, The results of 13C-NMR are shown in Fig. 4. The measurement conditions of the respective NMRs are as follows.

裝置:Varian Merccury公司 MVX 300 MHz NMR 136993.doc -82- 200940601 溶劑:CDC13 測定溫度:室溫(約25°C ) [13C-NMR之測定條件] 裝置:BRUKER BIOSPIN股份有限公司製造之Avance 6〇〇 光譜儀 溶劑:將試樣以5質量%溶解於丁内酯 NMR試樣管:套管(内管:以DMSO-d6作為洛克溶劑,外 管:試樣溶液) © 測定法:完全質子去偶法 累計次數:3000次 測定溫度:室溫(約25°C ) 〈實施例1&gt; (鹼溶性樹脂之製造) 於裝有TEFLON(註冊商標)製之錯型授拌器的玻璃製之 分離式三口燒瓶中,將雙(3-胺基-4-羥基苯基)丙燒 (CLARIANT公司製造)(以下亦稱為「BAP」)69.17 g(268毫 莫耳)、NMP 276 g、吼啶12.7 g(160毫莫耳)添加至反應容 器中’安裝氮氣導入管,於通入氮氣之狀態下進行撲拌, 使其溶解^ BAP溶解後,將反應容器浸於向甲醇中添加有 乾冰之容器中進行冷卻。使參考例12中所製造之雙(氣幾 基)三環[5,2,1,02’6]癸烷69.99 §(268毫莫耳)溶解於卜丁内_ 280 g中’保持於-ίο19C ’以30分滴加至反應容器中。 滴加結束後,將反應容器浸於冰浴中,保持於(^丨〇°c,搜 掉2小時。進而添加《比咬29.65 g(375毫莫耳)。 136993.doc -83 - 200940601 於上述反應液中添加乙醇,使聚合物析出後,進行回 收,並使其溶解於NMP 350毫升中。繼而,以陽離子交換 樹脂(ORGANO公司製造,AMBERLYST A21)78 g、陰離 子交換樹脂(ORGANO公司製造,AMBERLYST 15)75 g進 行離子交換。將該溶液於高速攪拌下滴加至離子交換水3 升中,使聚合物分散析出而加以回收,適當水洗、脫水後 實施真空乾燥,從而獲得包含PBO前驅物單元之鹼溶性樹 脂之粉體。 〇 將該溶液之一部分稀釋於N-甲基吡咯啶酮中,利用高效 液相層析法(以下亦稱為「GPC」)(昭和電工製造,Shodex KD-806M、KD-806M、串聯展開溶劑 N-甲基吡咯啶酮 40°C )測定分子量及分子量分布。GPC之分析條件如下所 述。 管柱:昭和電工公司製造 商標名為Shodex 805M/806M 串聯 溶離液:N-曱基吡咯啶酮40°C ® 流速:1.0 mL/分鐘 檢測器:日本分光公司製造商標名為RI-930 以聚笨乙烯換算之分子量之重量平均分子量(Mw)為 36800的單一之銳曲線,係單一組合物。於該鹼溶性樹脂 中添加γ- 丁内醋,對3 5質量%樹脂濃度之驗溶性樹脂溶液 進行調整(Ρ-1)。 〈實施例2&gt; 使用69.99 g(268毫莫耳)取代實施例1之雙(氯羰基)三環 136993.doc -84- 200940601 [5,2,1,02’6]癸烷66.25 8(253.7毫莫耳),進行與實施例1同樣 之操作,從而獲得以聚苯乙烯換算之分子量之重量平均分 子量(Mw)為28500之PBO前驅物。於該驗溶性樹脂中添加 γ-丁内酯’從而獲得35質量%樹脂濃度之鹼溶性樹脂溶液 (Ρ-2)。 &lt;實施例3&gt; 使用69.99 g(268毫莫耳)取代實施例I中之雙(氣羰基)三 環[5,2,1,〇2’6]癸烷73.7 g(282毫莫耳),進行與實施例丄相同 之操作’從而獲得以聚苯乙烯換算之分子量之重量平均分 子量(Mw)為53745之PBO前驅物。於該鹼溶性樹脂中添加 7 - 丁内醋’從而獲得3 5質量%樹脂濃度之驗溶性樹脂溶液 (P-3) 〇 &lt;實施例4 &gt; 反應容器係使用裝有TEFLON(註冊商標)製之錨型攪拌 器的玻璃製分離式三口燒瓶。於合成中,一面通入氮氣, 一面進行攪拌。將BAP 38.75 g(150毫莫耳)、NMP 154 g、 0比咬7.12 g(90毫莫耳)添加至反應容器中,於通入氮氣之 狀態下進行攪拌,使其溶解^ BAp溶解後,將反應容器浸 於向甲醇中添加有乾冰之容器中進行冷卻。將參考例2中 所製造之反應液1之總量(5_胺基間苯二甲酸衍生物15毫莫 耳)保持於-19〜-23 1,並全部滴加至上述反應液中。繼 而’使實施例2中所製造之雙(氣羰基)三環[5,2,1,02’6]癸烷 35·29 g(135毫莫耳)溶解於γ· 丁内酯11〇 g中,保持於_19〜 -23 °C ’並滴加至反應容器中。滴加結束後,將反應容器 136993.doc • 85 · 200940601 添力口0比 浸於冰浴中,保持於〇〜10°c,攪拌2小時。進而 啶16.6 g(210毫莫耳)。 於上述反應液中添加不良溶劑’使聚合物批 外氓後加以回 收’並使其溶解於四氫呋喃300毫升中。繼 、 叩,以陽離子 交換樹脂51 g、陰離子交換樹脂50 g進行離+六 丁父換。於高 速攪拌下將該溶液滴加至離子交換水2升中,μ w 1 τ 使聚合物分 散析出而加以回收’適當水洗、脫水後實施真空乾燥,▲ 而獲得ΡΒΟ前驅物之粉體。以聚苯乙烯換算八 ❹ 、升·^刀子量之重 量平均分子量(Mw)為40600。於該鹼溶性樹脂中添加 内酯,對35質量%樹脂濃度之鹼溶性樹脂溶液進行二二 4)。 ^ &lt;實施例5&gt; 使用實施例i之雙(氣羰基)三環[521〇2,6]癸烷Μ? g(259.1毫莫耳)替代69.99 g(268毫莫耳),雙(氣幾基)三環 [^丄鬥癸院滴加結束後,添加5_降福稀酸^•肝(東亨 化成工業公司製造)2·92 g(17.8毫莫耳),於耽下授摔2〇 小時後’進行與實施例!相同之操作,從而獲得以聚苯乙 烯換算之刀子量之重量平均分子量(心)為! 9繼之叩〇前 驅物。於該驗溶性樹脂中添加γ_ 丁内自旨,從而獲得h質量 %樹脂濃度之驗溶性樹脂溶液(ρ_5)β將所得之聚合物之 13C-NMR之結果示於圖5中。 〈實施例6&gt; 於裝有TEFLON(註冊商標)製之錯型授拌器的玻璃製分 離式三口燒瓶上安裝附有丁史塔克分水器(⑽“㈣叫) 136993.doc -86- 200940601 之冷卻管。添加雙(3,4_二羧基苯基)醚二酐(MANAC公司製 造)18.61 g(60毫莫耳)、BAP 32.16 g(12〇毫莫耳)。進而, 添加γ-丁内酯110 g、甲苯22 g作為溶劑。加溫至4〇〇c,於 氮氣環境下’以100 rprn授拌90分鐘。其後,將NMP 150 g、吡啶2.37 g(30毫莫耳)添加至反應溶液中,並浸於向甲 醇中添加有乾冰之容器中進行冷卻。將雙(氣幾基)三環 [5,2,1,0 ’ ]癸烧13.05 g(50毫莫耳)溶解於γ_ 丁内酯26 g中, 使其保持於-5〜-1(TC,並全部滴加至上述反應液中。滴加 結束後’將反應容器浸於冰浴中,使其保持於〇〜1 〇 〇C,授 拌2小時。進而添加吡啶5.53 g(7〇毫莫耳)。繼而,添加5_ 降袼烯酸-2,3_酐(東京化成工業公司製造)3·28 g(2〇毫莫 耳),於50°C下攪拌20小時。 其後’ &amp;於180 C之油浴中開始加熱,以1 go rpm對溶液 整體進行攪拌。於反應中,副產物之水與甲苯共沸而餾 出’每隔3 0分鐘’排出積存於回流管底之水。加熱後經過 2小時後,恢復至室溫,於上述反應液中添加不良溶劑, 使聚合物析出,然後進行回收,使其溶解於NMp 3〇〇毫升 中。繼而,以陽離子交換樹脂5〇 g、陰離子交換樹脂5〇 g 進行離子交換。於咼速擾拌下,將該溶液滴加至離子交換 水2升中’使聚合物分散析出而加以回收,適當水洗、去 除水後實施真空乾燥,從而獲得前驅物與?1之共聚物 之粉體。最終獲得以聚苯乙烯換算之分子量之重量平均分 子量(Mw)為17000之PBO前驅物與?1之共聚物^於該驗溶 性樹脂中添加γ-丁内酯,對35質量%樹脂濃度之鹼溶性樹 136993.doc -87- 200940601 脂溶液進行調整(P-6)。 &lt;實施例7&gt; 使用下述化合物: [化 89]Apparatus: Varian Merccury MVX 300 MHz NMR 136993.doc -82- 200940601 Solvent: CDC13 Measurement temperature: room temperature (about 25 ° C) [13C-NMR measurement conditions] Apparatus: Avance 6 manufactured by BRUKER BIOSPIN Co., Ltd. 〇 Spectrometer Solvent: Dissolve the sample at 5 mass% in the butyrolactone NMR sample tube: cannula (inner tube: DMSO-d6 as the lock solvent, outer tube: sample solution) © assay: complete proton decoupling The cumulative number of times of the method: 3,000 times of measurement temperature: room temperature (about 25 ° C) <Example 1> (Production of alkali-soluble resin) Separated glass made of a mistype-mixer made of TEFLON (registered trademark) In a three-necked flask, bis(3-amino-4-hydroxyphenyl)propene (manufactured by CLARIANT) (hereinafter also referred to as "BAP") 69.17 g (268 mmol), NMP 276 g, acridine 12.7 g (160 mmol) was added to the reaction vessel to install a nitrogen introduction tube, and the mixture was purged with nitrogen to dissolve it. After the BAP was dissolved, the reaction vessel was immersed in a container to which dry ice was added to methanol. Cooling in. The bis(gaso)tricyclo[5,2,1,02'6]decane 69.99 § (268 mmol) produced in Reference Example 12 was dissolved in puddle _ 280 g 'maintained at - ίο19C 'Add to the reaction vessel in 30 minutes. After the completion of the dropwise addition, the reaction vessel was immersed in an ice bath, kept at (^丨〇°c, and searched for 2 hours. Further, the addition of 29.65 g (375 mTorr) was added. 136993.doc -83 - 200940601 Ethanol was added to the reaction solution, and the polymer was precipitated, and then recovered and dissolved in 350 ml of NMP. Then, 78 g of cation exchange resin (AMBERLYST A21, manufactured by ORGANO Co., Ltd.) and anion exchange resin (manufactured by ORGANO Co., Ltd.) were used. , AMBERLYST 15) 75 g for ion exchange. The solution was added dropwise to 3 liters of ion-exchanged water under high-speed stirring, and the polymer was dispersed and precipitated, and recovered, appropriately washed with water, dehydrated, and vacuum dried to obtain a precursor containing PBO. A powder of an alkali-soluble resin of the material unit. 之一 One part of the solution is diluted in N-methylpyrrolidone by high performance liquid chromatography (hereinafter also referred to as "GPC") (Shodex KD, manufactured by Showa Denko) -806M, KD-806M, tandem development solvent N-methylpyrrolidone 40 ° C) The molecular weight and molecular weight distribution were determined. The analysis conditions of GPC are as follows. Column: Showa Electric Co., Ltd. Shodex 805M/806M Tandem Dissolution: N-Mercaptopyrrolidone 40°C ® Flow Rate: 1.0 mL/min Detector: Japan's Spectroscopic Corporation's trade name RI-930 The weight average molecular weight of the molecular weight in terms of polystyrene ( Mw) is a single sharp curve of 36800, which is a single composition. γ-butyrolactone is added to the alkali-soluble resin, and the solvent-soluble resin solution having a resin concentration of 35 mass% is adjusted (Ρ-1). Example 2&gt; The bis(chlorocarbonyl)tricyclic ring of Example 1 was replaced with 69.99 g (268 mmol) 136993.doc -84- 200940601 [5,2,1,02'6]decane 66.25 8 (253.7 mmol) The same procedure as in Example 1 was carried out to obtain a PBO precursor having a weight average molecular weight (Mw) of 28,500 in terms of polystyrene, and γ-butyrolactone was added to the test-soluble resin to obtain Alkali-soluble resin solution (Ρ-2) of 35 mass% resin concentration. &lt;Example 3&gt; The bis(gas carbonyl) tricyclo[5,2,1 in Example I was replaced with 69.99 g (268 mmol). , 〇 2'6] decane 73.7 g (282 mmol), performing the same operation as in Example 从而A PBO precursor having a weight average molecular weight (Mw) of 53,745 in terms of a polystyrene-converted molecular weight was obtained, and 7-butylic vinegar was added to the alkali-soluble resin to obtain a solvent-soluble resin solution having a resin concentration of 35 mass% (P). -3) 〇&lt;Example 4&gt; A reaction vessel was a glass separation three-necked flask equipped with an anchor type stirrer made of TEFLON (registered trademark). In the synthesis, nitrogen gas was introduced while stirring. Add BAP 38.75 g (150 mmol), NMP 154 g, 0 to 7.12 g (90 mmol) to the reaction vessel, stir it under nitrogen, dissolve it, and dissolve the BAp. The reaction vessel was immersed in a vessel to which dry ice was added to methanol for cooling. The total amount of the reaction liquid 1 produced in Reference Example 2 (5-aminoisophthalic acid derivative 15 mmol) was maintained at -19 to 23, and all was added dropwise to the above reaction liquid. Then, the bis(gas carbonyl)tricyclo[5,2,1,02'6]nonane 35.29 g (135 mmol) produced in Example 2 was dissolved in γ·butyrolactone 11 〇g. Medium, kept at _19~ -23 °C ' and added dropwise to the reaction vessel. After the completion of the dropwise addition, the reaction vessel 136993.doc • 85 · 200940601 was added to the ice bath, kept at 〇 10 ° C, and stirred for 2 hours. Further, pyridine was 16.6 g (210 mmol). A poor solvent was added to the above reaction solution, and the polymer was batch-extracted and then recovered, and dissolved in 300 ml of tetrahydrofuran. Following 叩, the cation exchange resin 51 g and the anion exchange resin 50 g were exchanged from +6 hexan. This solution was added dropwise to 2 liters of ion-exchanged water under high agitation, and the polymer was dispersed and precipitated by μ w 1 τ. The mixture was appropriately washed with water, dehydrated, and vacuum dried, and ▲ was obtained to obtain a powder of a ruthenium precursor. The weight average molecular weight (Mw) of the octagonal and liter knives in terms of polystyrene was 40,600. The lactone is added to the alkali-soluble resin, and the alkali-soluble resin solution having a resin concentration of 35 mass% is subjected to two or four (4). ^ &lt;Example 5&gt; Using the bis(gas carbonyl)tricyclo[521〇2,6]decane Μ? g (259.1 mmol) of Example i instead of 69.99 g (268 mmol), double (gas) After the end of the drip of the 丄 丄 癸 , , , , , 添加 添加 添加 添加 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝 肝After 2 hours, the same operation as in the example! was carried out to obtain a weight average molecular weight (heart) of the amount of the knife in terms of polystyrene! 9 followed by the predecessor. The γ-butane was added to the test-soluble resin to obtain a test solution (ρ_5) β of a resin concentration of h by mass. The result of 13 C-NMR of the obtained polymer is shown in Fig. 5 . <Example 6> A DyStark water separator was attached to a glass separation type three-necked flask equipped with a wrong type agitator manufactured by TEFLON (registered trademark) ((10) "(4) called) 136993.doc -86- Cooling tube of 200940601. Add bis(3,4-dicarboxyphenyl)ether dianhydride (manufactured by MANAC) 18.61 g (60 mmol), BAP 32.16 g (12 〇 millimolar). Further, add γ- 110 g of butyrolactone and 22 g of toluene were used as solvents. After heating to 4 ° C, the mixture was stirred at 100 rprn for 90 minutes under nitrogen atmosphere. Thereafter, NMP 150 g and pyridine 2.37 g (30 mmol) were added. Add to the reaction solution, and immerse in a vessel with dry ice added to methanol for cooling. Burn the bis(gas group) tricyclo[5,2,1,0 ' ] 13.05 g (50 mmol) Dissolved in 26 g of γ-butyrolactone, kept at -5 to -1 (TC, and all added dropwise to the above reaction solution. After the completion of the dropwise addition, the reaction vessel was immersed in an ice bath to keep it in the 〇~1 〇〇C, the mixture was mixed for 2 hours. Further, pyridine 5.53 g (7 〇 millimolar) was added. Then, 5_ decenoic acid-2,3-anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.) was added. ( 2 Torr, stirred at 50 ° C for 20 hours. Thereafter, &amp;&lt;&gt; heating was started in an oil bath of 180 C, and the whole solution was stirred at 1 go rpm. In the reaction, the by-product water and The toluene was azeotroped and the water accumulated in the bottom of the reflux pipe was discharged every '30 minutes. After 2 hours from the heating, the temperature was returned to room temperature, and a poor solvent was added to the reaction liquid to precipitate the polymer, and then proceeded. The solution was dissolved in 3 ml of NMp, and then ion exchange was carried out with 5 〇g of a cation exchange resin and 5 〇g of an anion exchange resin. The solution was added dropwise to ion-exchanged water under an idling scramble. In the middle of the process, the polymer is dispersed and precipitated, and is appropriately washed with water, and the water is removed, followed by vacuum drying to obtain a powder of a copolymer of the precursor and the ?1, and finally a weight average molecular weight of a molecular weight in terms of polystyrene is obtained ( Mw) is a copolymer of 17,000 PBO precursor and ?1. γ-butyrolactone is added to the test-soluble resin, and the alkali-soluble tree 136993.doc-87-200940601 fat solution of 35 mass% resin concentration is adjusted ( P-6). &lt; Example 7 &gt; using the following compound: [Formula 89]

85.9 g(268毫莫耳)替代實施例5之BAP 69.17 g(268毫莫 耳),然後進行與實施例5相同之操作,從而獲得聚苯乙烯 換算重量平均分子量(Mw)為22000之PBO前驅物。於鹼溶 性樹脂中添加γ-丁内酯,從而獲得35質量%樹脂濃度之鹼 溶性樹脂溶液(Ρ-13)。將所得之聚合物之13C-NMR之結果 示於圖6中。 &lt;實施例8&gt; 使用102.5 g(268毫莫耳)之下述化合物替代實施例5之 BAP 69.17 g(268 毫莫耳): [化 90]85.9 g (268 mmol) was substituted for the BAP 69.17 g (268 mmol) of Example 5, and then the same operation as in Example 5 was carried out to obtain a PBO precursor having a polystyrene equivalent weight average molecular weight (Mw) of 22,000. Things. Γ-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (Ρ-13) having a resin concentration of 35 mass%. The results of 13 C-NMR of the obtained polymer are shown in Fig. 6. &lt;Example 8&gt; The following compound of Example 5 was used in place of 102.5 g (268 mmol) of BAP 69.17 g (268 mmol):

,然後進行與實施例5相同之操作,從而獲得以聚苯乙烯 換算之分子量之重量平均分子量(Mw)為24000之PBO前驅 物。於該鹼溶性樹脂中添加γ-丁内酯,從而獲得35質量% 136993.doc • 88 - 200940601 樹脂濃度之鹼溶性樹脂溶液(P-14)。將所得之聚合物之 13C-NMR之結果示於圖7中。 〈實施例9&gt; 使用下述化合物79.97 g(268毫莫耳)替代實施例6之BAP 69.17 g(268 毫莫耳): [化 91]Then, the same operation as in Example 5 was carried out to obtain a PBO precursor having a molecular weight average molecular weight (Mw) of 24,000 in terms of polystyrene. Γ-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (P-14) of 35 mass% 136993.doc • 88 - 200940601 resin concentration. The results of 13C-NMR of the obtained polymer are shown in Fig. 7. <Example 9> The following compound 79.97 g (268 mmol) was used instead of the BAP of Example 6 69.17 g (268 mmol): [Chem. 91]

,然後進行與實施例6相同之操作,從而獲得以聚苯乙烯 換算之分子量之重量平均分子量(Mw)為20000之PBO前驅 物。於該鹼溶性樹脂中添加7 -丁内酯,從而獲得35質量% 樹脂濃度之鹼溶性樹脂溶液(P-1 5)。將所得之聚合物之 13C-NMR之結果示於圖8中。 〈實施例1〇&gt;Then, the same operation as in Example 6 was carried out to obtain a PBO precursor having a weight average molecular weight (Mw) of 20,000 in terms of polystyrene. 7-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (P-1 5) having a resin concentration of 35 mass%. The results of 13C-NMR of the obtained polymer are shown in Fig. 8. <Example 1〇>

❿ 使用下述化合物80.51 g(268毫莫耳)替代實施例6之BAP 69.17 g(268 毫莫耳): [化 92]替代 The following compound 80.51 g (268 millimoles) was used instead of the BAP of Example 6 69.17 g (268 millimoles): [Chem. 92]

,然後進行與實施例5相同之操作,從而獲得以聚苯乙烯 換算之分子量之重量平均分子量(Mw)為21000之PBO前驅 136993.doc -89- 200940601 物。於該鹼溶性樹脂中添加7 -丁内酯,從而獲得35質量% 樹脂濃度之鹼溶性樹脂溶液(Ρ-16)。將所得之聚合物之 13C-NMR之結果示於圖9中。 &lt;實施例11&gt; 使用下述化合物75.12 g(268毫莫耳)替代實施例6之BAP 69.17g(268 毫莫耳): [化 93]Then, the same operation as in Example 5 was carried out to obtain a PBO precursor 136993.doc-89-200940601 having a weight average molecular weight (Mw) of 21,000 in terms of polystyrene. 7-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (Ρ-16) having a resin concentration of 35 mass%. The results of 13C-NMR of the obtained polymer are shown in Fig. 9. &lt;Example 11&gt; The following compound 75.12 g (268 mmol) was used instead of the BAP of Example 6 69.17 g (268 mmol): [Chem. 93]

H2 Η [2ΝΗΟH2 Η [2ΝΗΟ

,然後進行與實施例5相同之操作,從而獲得以聚苯乙烯 換算之分子量之重量平均分子量(Mw)為20800之PBO前驅 物。於該鹼溶性樹脂中添加T -丁内酯,從而獲得35質量% 樹脂濃度之鹼溶性樹脂溶液(P-17)。將所得之聚合物之 13C-NMR之結果示於圖10中。 &lt;實施例12&gt; 使用雙(3-胺基-4-羥基苯基)砜75.12 g(小西化學工業公 司製造)(268毫莫耳)替代實施例6之BAP 69.17 g(268毫莫 耳),然後進行與實施例5相同之操作,從而獲得以聚苯乙 烯換算之分子量之重量平均分子量(Mw)為17800之PBO前 驅物。於該鹼溶性樹脂中添加γ-丁内酯,從而獲得35質量 %樹脂濃度之鹼溶性樹脂溶液(Ρ-1 8)。 &lt;實施例13&gt; 136993.doc -90· 200940601Then, the same operation as in Example 5 was carried out to obtain a PBO precursor having a weight average molecular weight (Mw) of 20,800 in terms of polystyrene. T-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (P-17) having a resin concentration of 35 mass%. The results of 13C-NMR of the obtained polymer are shown in Fig. 10. &lt;Example 12&gt; The bis(3-amino-4-hydroxyphenyl)sulfone 75.12 g (manufactured by Xiaoxi Chemical Industry Co., Ltd.) (268 mmol) was used instead of the BAP of Example 6 69.17 g (268 mmol) Then, the same operation as in Example 5 was carried out to obtain a PBO precursor having a weight average molecular weight (Mw) of 17,800 in terms of a molecular weight in terms of polystyrene. Γ-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (Ρ-1 8) having a resin concentration of 35 mass%. &lt;Example 13&gt; 136993.doc -90· 200940601

使用下述化合物62.23 g(268毫莫耳)替代實施例5之BAP 69.17 g(268 毫莫耳): [化 94]The following compound 62.23 g (268 mmol) was used instead of the BAP of Example 5 69.17 g (268 mM): [Chem. 94]

,然後進行與實施例5相同之操作,從而獲得以聚苯乙烯 換算之分子量之重量平均分子量(Mw)為23000之PBO前驅 物。於該鹼溶性樹脂中添加γ-丁内酯,從而獲得35質量°/〇 樹脂濃度之鹼溶性樹脂溶液(Ρ-19)。將所得之聚合物之 13C-NMR之結果示於圖11中。 &lt;實施例14&gt; 使用下述化合物75.00 g(231毫莫耳)(日本純良藥業公司 製造)替代實施例5之BAP 69.17 g(268毫莫耳): [化 95]Then, the same operation as in Example 5 was carried out to obtain a PBO precursor having a weight average molecular weight (Mw) of 23,000 in terms of polystyrene. Γ-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (Ρ-19) having a resin concentration of 35 mass% / 。. The results of 13C-NMR of the obtained polymer are shown in Fig. 11. &lt;Example 14&gt; The following compound 75.00 g (231 mmol) (manufactured by Nippon Pure Pharmaceutical Co., Ltd.) was used instead of the BAP of Example 5, 69.17 g (268 mmol): [Chem. 95]

,然後進行與實施例5相同之操作,從而獲得以聚苯乙烯 換算之分子量之重量平均分子量(Mw)為16000之PBO前驅 物。於該鹼溶性樹脂中添加γ-丁内酯,從而獲得35質量% 樹脂濃度之鹼溶性樹脂溶液(Ρ-20)。 &lt;比較例1 &gt; 使用安裝有TEFLON(註冊商標)製之錨型攪拌器的玻璃 製之分離式三口燒瓶作為反應容器。於合成中,一面通入 136993.doc -91 - 200940601Then, the same operation as in Example 5 was carried out to obtain a PBO precursor having a molecular weight average molecular weight (Mw) of 16,000 in terms of polystyrene. Γ-butyrolactone was added to the alkali-soluble resin to obtain an alkali-soluble resin solution (Ρ-20) having a resin concentration of 35 mass%. &lt;Comparative Example 1 &gt; A separable three-necked flask made of glass to which an anchor type stirrer manufactured by TEFLON (registered trademark) was attached was used as a reaction container. In the synthesis, one side access 136993.doc -91 - 200940601

氮氣,一面進行攪拌。將bap 29.52 g(114毫莫耳)、NMP 118 g、吡啶5.27 g(67毫莫耳)添加至反應容器中,於通入 氮氣之狀態下進行攪拌,使其溶解。BAp溶解後,將反應 谷器浸於向SOLMIX中添加有乾冰之容器中進行冷卻。將 參考例3中所製造之反應液2之總量(丨,3 _伸苯基二乙酸衍生 物100毫莫耳)保持於-19~-23。(:,並全部滴加至上述反應液 中。滴加結束後,將反應容器浸於冰浴中,使其保持於 0〜10 C,攪拌2小時。進而添加吡啶1〇 6 g(134毫莫耳)。 © 於上述反應液中添加乙醇,使聚合物析出後加以回收,並 使其溶解於NMP 300毫升中。繼而,以陽離子交換樹脂5〇 g、陰離子交換樹脂50 g進行離子交換。於高速攪拌下, 將該溶液滴加至離子交換水2升中,使聚合物分散析出而 加以回收,適當水洗、脫水後實施真空乾燥,從而獲得 PBO前驅物之粉體。最終獲得以聚苯乙烯換算之分子量之 重量平均分子量(Mw)為21000之PB0前驅物。於該鹼溶性 ◎ 樹脂中添加丁内酯,若放置一個晚上則會凝膠化。因 此將鹼溶性樹脂溶解於Ν-曱基吡咯啶酮中,從而獲得35質 量%樹脂濃度之鹼溶性樹脂溶液(ρ_7)。 &lt;比較例2&gt; 使用BAP 27.98 g(108毫莫耳)替代比較例jiBAp 29 52 g(l 14毫莫耳),使用參考例4中所製成之反應液3之總量 (1,4-伸苯基二乙酸衍生物115毫莫耳)替代反應液2,除此 以外,進行與比較例丨相同之操作,從而獲得以聚苯乙烯 換算之分子量之重量平均分子量(Mw)為3丨6〇〇之pB〇前驅 136993.doc •92- 200940601 物。於該鹼溶性樹脂中添加γ_丁内醋,若放置一個晚上則 會凝膠化。因此將鹼溶性樹脂溶解於Ν_甲基吡咯啶酮中’ 從而獲得35質量%樹脂濃度之鹼溶性樹脂溶液(ρ_8)。 〈比較例3 &gt; 使用BAP 3 1.56 g(l22毫莫耳)替代比較例jiBAp 29.52 g(l 14毫莫耳),使用參考例5中所製成之反應液4之總量 (1,4-環己烷二甲酸衍生物115毫莫耳)替代反應液2,進行 與比較例1相同之操作,從而獲得以聚苯乙烯換算之分子 ❹ *之重量平均分子量(Mw)為183〇〇之PB〇前驅物。於該鹼 溶性樹脂中添加γ·丁内醋,若放置一個晚上則會凝膝化。 因此將鹼溶性樹脂溶解於Ν•甲基吡咯啶酮中,從而獲得乃 質量%樹脂濃度之鹼溶性樹脂溶液(ρ_9)。 &lt;比較例4&gt; 於安裝有TEFLON(註冊商標)製之錨型攪拌器的玻璃製 之分離式三口燒瓶上’安裝氮氣導入管、溫度計,一面通 入氮氣,一面將上述燒瓶浸於矽油浴中,以1〇〇 rpm進行 攪拌。 將雙(3·胺基-4-羥基苯基)砜78 48 g(小西化學工業公司 製造)(280毫莫耳)(以下亦稱為「s〇2H〇AB」)添加至ΝΝ· 二甲基乙醯胺300 g、吡啶14·7 g〇87毫莫耳)中使s〇2-HOAB溶解。將反應液冷卻至❶將4,4,_氧雙苯甲醯氯 (日本農藥公司製造)(以下亦稱為「DEDC」)73 45 g⑽毫 莫耳)溶解於γ_ 丁内酯2〇〇 g中,並填充至滴液漏斗中,以 5〇分鐘滴加至反應液中。結束滴加3〇分鐘後,添加吡啶 I36993.doc •93· 200940601 29.4 g(374毫莫耳)。於室溫下搜拌2小時。添加5_ 2、3-二甲酸酐(東京化成工業股份有限公司製造)心 g(62毫莫耳),一面通入氮氣,一面於5〇它之矽浴溫声下 以H)〇 rpm加熱授拌8小時。其後,進行如下處理 過分別填充有以NMP 500 g取代之陽離子交換樹脂及陰: 子交換樹脂各1〇〇 g之玻璃管枉。於高速攪拌下,將上述 反應液滴加至3 L水中,使聚合物分散析出,將其回收,Nitrogen was stirred while stirring. Bap 29.52 g (114 mmol), NMP 118 g, and pyridine 5.27 g (67 mmol) were added to the reaction vessel, and the mixture was stirred under a nitrogen atmosphere to dissolve. After the BAp was dissolved, the reaction vessel was immersed in a vessel to which dry ice was added to SOLMIX for cooling. The total amount of the reaction liquid 2 produced in Reference Example 3 (丨, 3 _ phenylenediacetic acid derivative 100 mmol) was maintained at -19 to -23. (:, and all the dropwise addition to the above reaction solution. After the completion of the dropwise addition, the reaction vessel was immersed in an ice bath, kept at 0 to 10 C, and stirred for 2 hours. Further, pyridine 1 〇 6 g (134 m) was added. Ethyl alcohol was added to the reaction solution, and the polymer was precipitated, recovered, and dissolved in 300 ml of NMP, followed by ion exchange with 5 g of a cation exchange resin and 50 g of an anion exchange resin. Under high-speed stirring, the solution was added dropwise to 2 liters of ion-exchanged water, and the polymer was dispersed and precipitated, and recovered, and washed with water, dehydrated, and then vacuum-dried to obtain a powder of a PBO precursor. A PB0 precursor having a weight average molecular weight (Mw) in terms of ethylene and having a molecular weight (Mw) of 21,000. Butyrolactone is added to the alkali-soluble ◎ resin, and if it is left overnight, it gels. Therefore, the alkali-soluble resin is dissolved in Ν-曱. In the pyrrolidone, an alkali-soluble resin solution (ρ_7) having a resin concentration of 35 mass% was obtained. <Comparative Example 2> BAP 27.98 g (108 mmol) was used instead of the comparative example jiBAp 29 52 g (l 14 mmol) ear) The same operation as in the comparative example was carried out except that the total amount of the reaction liquid 3 prepared in Reference Example 4 (the 1,4-phenylenediacetic acid derivative (115 mmol) was replaced by the reaction liquid 2). Thus, a pB〇 precursor 136993.doc • 92- 200940601 having a weight average molecular weight (Mw) of a molecular weight in terms of polystyrene of 3 丨 6 获得 is obtained. γ _ vinegar is added to the alkali-soluble resin, if placed One night, it gelled. Therefore, the alkali-soluble resin was dissolved in Ν-methylpyrrolidone' to obtain an alkali-soluble resin solution (ρ_8) having a resin concentration of 35 mass%. <Comparative Example 3 &gt; Using BAP 3 1.56 g (l22 mmol) instead of the comparative example jiBAp 29.52 g (l 14 mmol), using the total amount of the reaction liquid 4 prepared in Reference Example 5 (1,4-cyclohexanedicarboxylic acid derivative 115 m) In place of the reaction liquid 2, the same operation as in Comparative Example 1 was carried out to obtain a PB 〇 precursor having a weight average molecular weight (Mw) of 183 Å in terms of polystyrene-converted molecular ❹ *. Add γ·butyrol vinegar, if it is left overnight, it will be kneaded. So it will dissolve in alkali. The resin was dissolved in hydrazine-methylpyrrolidone to obtain an alkali-soluble resin solution (ρ_9) in a mass% resin concentration. <Comparative Example 4> An anchor type stirrer manufactured by TEFLON (registered trademark) was attached. In a separate three-necked flask made of glass, a nitrogen gas introduction tube and a thermometer were attached, and the flask was immersed in an oil bath while stirring with nitrogen, and stirred at 1 rpm. The bis(3·amino-4-hydroxy group) was added. Phenyl)sulfone 78 48 g (manufactured by Xiaoxi Chemical Industry Co., Ltd.) (280 mmol) (hereinafter also referred to as "s〇2H〇AB") is added to ΝΝ·dimethylammonium 300 g, pyridine 14·7 〇〇2-HOAB was dissolved in g〇87 mmol. The reaction solution was cooled to ❶4,4,_ oxybenzoyl chloroform (manufactured by Nippon Agricultural Co., Ltd.) (hereinafter also referred to as "DEDC") 73 45 g (10) millimolar) dissolved in γ-butyrolactone 2〇〇g The mixture was filled in a dropping funnel and added dropwise to the reaction liquid over 5 minutes. After the completion of the dropwise addition for 3 minutes, pyridine I36993.doc • 93· 200940601 29.4 g (374 mmol) was added. Mix for 2 hours at room temperature. Add 5-2, 3-Dicarboxylic anhydride (manufactured by Tokyo Chemical Industry Co., Ltd.), heart g (62 mmol), and pass nitrogen gas on one side, and heat it at H) 〇 rpm under 5 〇 bath temperature. Mix for 8 hours. Thereafter, the glass tube was filled with a cation exchange resin substituted with NMP 500 g and a cation exchange resin of 1 〇〇g each. The above reaction droplets were added to 3 L of water under high-speed stirring to disperse and precipitate the polymer, and to recover it.

適當地水洗、脫水後實施真空乾燥,從而獲得鹼 之粉體。 以聚苯乙烯換算之分子量之重量平均分子量(MW)為 Ο之單—之銳曲線,係單—組合物。於該驗溶性樹脂 中添加7 _丁内醋,若放置一個晚上則會凝膠化。因此, 將驗溶性樹脂溶解於N_甲基吡咯啶酮中,從而獲得h質量 %樹脂濃度之鹼溶性樹脂溶液(p_ i 。 &lt;比較例5&gt; 於安裝有TEFLON(註冊商標)製之錨型攪拌器的玻璃製 之分離式三口燒瓶上安裝附有丁史塔克分水器之冷卻管。 添加二環(2,2,2)-辛冬稀_2,3,5,6_四甲酸二野(東京化成工 業股份有限公司製造)14.89 g(60毫莫耳)、4,4_二胺基苯基 醚(和歌山精化工業公司製造)6·01 g(3〇毫莫耳卜進而,將 γ-丁内酯95.5 g、甲苯30 g添加至系中作為溶劑。於室溫 下,在氮氣環境下,以1〇〇 rpm攪拌2〇分鐘,然後浸於18〇 C之油浴中開始加熱,以丨80 rpm對溶液整體進行攪拌。 於反應中,副產物之水與甲苯共沸而餾出,每隔3〇分鐘, 136993.doc • 94· 200940601 排出積存於回流管底之水。加熱後經過2小時後,開始第2 階段之添加,添加雙(3-胺基-4-羥基苯基)砜16.82 g(60毫 莫耳),攪拌1小時。繼而,將雙(3,4_二羧基苯基)醚二酐 15.34 g(49.5毫莫耳)添加至系中。於i8〇°c下以180 rpm加 熱攪拌3小時後’從油浴中取出,停止加熱。於反應中, 除去反應之副產物之水與甲苯之餾分。如上所述而製造之 鹼溶性樹脂的以聚苯乙烯換算之重量平均分子量為 1200(^如此獲得35質量%樹脂濃度之鹼溶性樹脂溶液(p_ ❹ 11)。 &lt;比較例6&gt;After appropriate washing with water and dehydration, vacuum drying is carried out to obtain a powder of an alkali. The weight average molecular weight (MW) of the molecular weight in terms of polystyrene is a sharp curve of 单, which is a mono-composition. Add 7-buty vinegar to the test-soluble resin, and gel it if left overnight. Therefore, the test-soluble resin is dissolved in N-methylpyrrolidone to obtain an alkali-soluble resin solution having a resin concentration of h% by mass (p_i. <Comparative Example 5> An anchor made of TEFLON (registered trademark) is attached. A three-way flask made of glass in a stirrer is equipped with a cooling tube attached with a Ding Stark water separator. Adding a second ring (2, 2, 2) - Xin Dongshui_2, 3, 5, 6_4 Formic acid Erye (manufactured by Tokyo Chemical Industry Co., Ltd.) 14.89 g (60 mmol), 4,4-diaminophenyl ether (manufactured by Wakayama Seiki Co., Ltd.) 6·01 g (3 〇 mmol) Further, 95.5 g of γ-butyrolactone and 30 g of toluene were added to the system as a solvent. The mixture was stirred at 1 rpm for 2 minutes at room temperature under a nitrogen atmosphere, and then immersed in an oil bath of 18 ° C. The heating was started, and the whole solution was stirred at 丨80 rpm. In the reaction, the by-product water was azeotroped with toluene and distilled off every 3 minutes, 136993.doc • 94· 200940601 was discharged at the bottom of the reflux tube. Water. After 2 hours after heating, the addition of the second stage was started, and bis(3-amino-4-hydroxyphenyl)sulfone 16.82 g (60 mM) was added. The ear was stirred for 1 hour. Then, 15.34 g (49.5 mmol) of bis(3,4-dicarboxyphenyl)ether dianhydride was added to the system. The mixture was heated and stirred at 180 rpm for 3 hours at i8 °C. After the removal from the oil bath, the heating is stopped. In the reaction, the water and toluene fractions of the by-product of the reaction are removed. The alkali-soluble resin produced as described above has a weight average molecular weight of 1200 in terms of polystyrene (^). Thus, an alkali-soluble resin solution (p_ ❹ 11) having a resin concentration of 35 mass% was obtained. &lt;Comparative Example 6&gt;

使用BAP 72.28 g(280毫莫耳)替代比較例4之s〇2_h〇aB 78.48 g(280毫莫耳),進行與比較例4相同之操作,從而獲 得以聚笨乙烯換算之分子量之重量平均分子量(Mw)為 14000之鹼溶性樹脂。於該鹼溶性樹脂中添加丫_ 丁内酯, 使其溶解,從而獲得35°/。樹脂濃度之鹼溶性樹脂溶液(ρ_ 12)。 〇 &lt;比較例7&gt; 使用雙(3-胺基_4_羥基苯基)六氟丙烷1〇2 55 g(28〇毫莫 耳)替代比較例4之S02-H0AB 78.48 g(280毫莫耳),進行 與比較例4相同之操作,從而獲得以聚苯乙烯換算之分子 置之重量平均分子量(1^”為155〇〇之鹼溶性樹脂。於該鹼 ,樹月曰中添加γ_ 丁内酯,使其溶解,從而獲得3 5樹脂 濃度之鹼溶性樹脂溶液(Ρ-21)。 〈實施例15〜28、比較例8〜14&gt; 136993.doc -95· 200940601 (正型感光性樹脂組合物之製備) 根據下述表1之組合,在上述各實施例卜14、及比較例 1 7中所得之驗浴性樹脂溶液(p_〖〜p_2丨)中,相對於鹼溶性 樹脂純分100質量份,溶解參考例6中所得之感光性重氮萘 醒化合物PAC-1 22質量份,然後溶解5_正己基間苯二酚 (和光純藥工業股份有限公司製造)4f量份,進而添加並溶 解參考例7中所得之接著助劑溶液3〇質量份後以丨之 過渡器進行過渡,從而獲得正型感光性樹脂組合物。 © 〈正型感光性樹脂組合物之硬化膜的玻璃轉移溫度(Tg)之 測定&gt; 藉由旋轉塗布機(東京電子公司製造之c〗ean Track Mark7) ’將上述實施例15〜28、及比較例8〜14中所得之正 型感光性樹脂組合物塗布於6英吋矽晶圓上,於13〇&lt;&gt;c下乾 燥180私後,使用升溫式烘箱(K〇y〇 Therm〇 SyStem公司製 造之VF 200B),於氮氣環境下,以32(Γ(:加熱丨小時,從而 @ 獲得膜厚為10.0 μιη之耐熱性硬化膜。 將該硬化膜切割成3 mm之寬度,於氫氟酸水溶液中浸 潰一晚,剝離膜片,使其乾燥,對於所得者,使用丁河八裝 置(島津製作所製之TMA_5〇),藉由氮流量為5〇 ml/min, 升溫速度為10&lt;t /min之條件測定其玻璃轉移溫度。將其結 果不於表2中。再者’於下述正型感光性樹脂組合物之評 知中’對於無法觀測敏感度之比較例不進行以之測定。 &lt;驗溶性樹脂之水銀燈之i線穿透性之測定&gt; 進而以溶劑對上述各實施例1~14、及比較例1〜7中所得 136993.doc -96- 200940601 之驗溶性樹脂溶液進行稀釋,並進行調整,以使鹼溶性樹 脂濃度成為1質量%,將其填充至丨cm之石英製光電管中, 利用島津製作所公司製造之UV-1600PC吸光度測定機測定 水銀燈之i線即365 nm之吸光度(根據Lambert Beer之式而 算出)。將其結果示於表2中。 &lt;正型感光性樹脂組合物之評價&gt; (1)圖案化特性評價 於6英吋梦晶圓上,藉由旋轉塗布機(東京電子公司製造 之Clean Track Mark7)而塗布上述正型感光性樹脂組合 物’於130°C下乾燥180秒,從而獲得膜厚為7.9 μιη之塗 膜。 於該塗膜上’藉由i線步進機曝光機(ΝΙΚ〇Ν公司製造之 NSR 2005i8A) ’通過主光罩,以曝光量每階段變化a mJ/cm2之方式進行曝光β利用2 38〇/〇 tmAH水溶液 (CLARIANT公司製造之Az 3〇〇MIF),於23。〇之條件下調 整顯影時間,對該晶圓進行顯影,以使顯影後膜厚達到 6.75 μιη,以純水沖洗15秒,從而獲得正型之起伏圖案。 利用顯微鏡對該起伏圖案進行觀察,將可溶解除去曝光 部之3.5 μιη之正方形起伏圖案的最小曝光量定義為敏感 度,並將其結果示於表2中。進@,製作相對於顯影前之 膜厚7.9 μιη、每次增加02 μιη之膜厚之塗布膜在初始膜 厚為7·9 μΓη時所求出之最小曝光量上加上乃之條件 下進行曝光’關於顯影時間,固定於初始膜厚為7 9 pm時 所求出之顯影時間,進行顯影,並求出:相對於原來之 136993.doc -97- 200940601 7.9 μηι而增加臈厚之情形時 起伏圖案之膜厚邊際。 可溶解除去3_5 μηι之正方形The same operation as in Comparative Example 4 was carried out by using BAP 72.28 g (280 mmol) instead of s〇2_h〇aB 78.48 g (280 mmol) of Comparative Example 4, thereby obtaining a weight average molecular weight in terms of polystyrene. An alkali-soluble resin having a molecular weight (Mw) of 14,000. To the alkali-soluble resin, 丫-butyrolactone was added and dissolved to obtain 35 ° /. A resin-soluble alkali-soluble resin solution (ρ_12). 〇 &lt;Comparative Example 7&gt; Using bis(3-amino-4-hydroxyphenyl)hexafluoropropane 1 〇 2 55 g (28 〇 millimolar) instead of S02-H0AB of Comparative Example 4 78.48 g (280 mmol) The same operation as in Comparative Example 4 was carried out to obtain an alkali-soluble resin having a weight average molecular weight (1^" of 155 Å in terms of polystyrene-converted molecules. In the base, γ_丁 was added to the tree The lactone was dissolved to obtain an alkali-soluble resin solution (Ρ-21) having a resin concentration of 35. <Examples 15 to 28, Comparative Examples 8 to 14> 136993.doc -95· 200940601 (Positive type photosensitive resin) Preparation of the composition) According to the combination of the following Table 1, the bath-like resin solution (p_〖~p_2丨) obtained in each of the above Examples 14 and Comparative Example 17 was purely separated from the alkali-soluble resin. 100 parts by mass, 22 parts by mass of the photosensitive diazophthalein compound PAC-1 obtained in Reference Example 6 was dissolved, and then 4 g parts of 5-n-hexyl resorcin (manufactured by Wako Pure Chemical Industries Co., Ltd.) was dissolved, and further After adding and dissolving 3 parts by mass of the auxiliary solution obtained in Reference Example 7, it was carried out with a translucent reactor. The positive-type photosensitive resin composition is obtained. © <Measurement of glass transition temperature (Tg) of cured film of positive photosensitive resin composition> By spin coater (C-made by Tokyo Electronics Co., Ltd.) ean Track Mark7 The positive photosensitive resin compositions obtained in the above Examples 15 to 28 and Comparative Examples 8 to 14 were applied onto a 6-inch wafer, and dried at 180 ° &lt;&gt; Using a temperature-raising oven (VF 200B manufactured by K〇y〇 Therm〇SyStem Co., Ltd.), under a nitrogen atmosphere, a heat-resistant cured film having a film thickness of 10.0 μm was obtained by heating at 32 (: The cured film was cut into a width of 3 mm, and immersed in a hydrofluoric acid aqueous solution for one night, and the film was peeled off and dried. For the obtained product, a Dinghe eight device (TMA_5〇 manufactured by Shimadzu Corporation) was used, and nitrogen flow was performed. The glass transition temperature was measured at a temperature rise rate of 10 〇 ml/min and a temperature increase rate of 10 ° t / min. The results are not shown in Table 2. In addition, 'in the evaluation of the following positive photosensitive resin composition' For the comparative example in which the sensitivity cannot be observed, it is not measured. &lt;Measurement of i-line permeability of mercury lamp for test-soluble resin&gt; Further, the test solution of 136993.doc-96-200940601 obtained in each of Examples 1 to 14 and Comparative Examples 1 to 7 was subjected to a solvent. Diluted and adjusted so that the alkali-soluble resin concentration was 1% by mass, and it was filled in a quartz photocell of 丨cm, and the i-line of the mercury lamp, that is, 365 nm, was measured by a UV-1600PC absorbance measuring machine manufactured by Shimadzu Corporation. Absorbance (calculated according to Lambert Beer's formula). The results are shown in Table 2. &lt;Evaluation of Positive Photosensitive Resin Composition&gt; (1) Patterning characteristics were evaluated on a 6-inch dream wafer, and the above-mentioned positive-type photosensitive was applied by a spin coater (Clean Track Mark 7 manufactured by Tokyo Electronics Co., Ltd.) The resin composition 'dried at 130 ° C for 180 seconds to obtain a coating film having a film thickness of 7.9 μm. On the coating film 'by the i-line stepper exposure machine (NSR 2005i8A manufactured by ΝΙΚ〇Ν )) 'through the main reticle, the exposure is changed by a mJ/cm2 per stage of exposure amount β 2 〇 /〇tmAH aqueous solution (Az 3〇〇MIF manufactured by CLARIANT), at 23. The developing time was adjusted under the conditions of 〇, and the wafer was developed to have a film thickness of 6.75 μm after development, and rinsed with pure water for 15 seconds to obtain a positive undulating pattern. The undulating pattern was observed with a microscope, and the minimum exposure amount of a 3.5 μm square undulating pattern capable of dissolving and removing the exposed portion was defined as the sensitivity, and the results are shown in Table 2. Into @, the coating film having a film thickness of 7.9 μm before development and a film thickness of 0.2 μm each is added under the condition that the minimum exposure amount obtained when the initial film thickness is 7·9 μΓη is added. Exposure 'Development time, fixed to the development time determined at an initial film thickness of 7 9 pm, developed, and found: when the thickness is increased relative to the original 136993.doc -97- 200940601 7.9 μηι The thickness of the undulating pattern is marginal. Can dissolve the square of 3_5 μηι

比較例8〜U之正型感光性樹脂組合物無法藉由γ-丁内脂 製成’使用ΝΜΡ進行調整。比較例8〜η之正型感光性樹脂 組合物’以顯影機之最小顯影時間即9秒進行顯影,但未 曝光部之溶解速度非常快,無法將顯影後之膜厚調節成 6.75 μΠ1,結果無法獲得所需之起伏圖案。其原因在於, 於未曝光部,無法藉由pACM中所含之萘酿二叠氮抑止驗 溶性樹脂之溶解,結果無法獲得未曝光部與曝光部之溶解 速度之差。於比較例12、14中,可獲得所需之3 $ 之圖 案,但結果獲得圖案時所需之敏感度較低。於比較例i 3 中’可藉由調整顯影時間而調整膜厚以使其達到6 75 μηι ’但無法以8〇〇 mj/cm2以下之曝光量獲得所需之圖案。 於比較例14中’可藉由調整顯影時間而調整膜厚以使其達 到6·75 μιη’且具有較高之敏感度’但含有鹵原子之ρ原 子0 於實施例15〜28中,可獲得不含鹵原子,具有高敏感 度’以相同顯影時間、相同曝光量進行處理之情形時的膜 厚邊際良好之起伏圖案。 &lt;硬化起伏圖案之製成&gt; 使用升溫式烘箱(Koyo Thermo System公司製造之 2〇〇B),於氮氣環境下,以320°C對實施例15〜28中所得之 附有起伏圖案之矽晶圓加熱1小時’從而獲得膜厚為5 μηι 之硬化起伏圖案。尤其是,實施例19〜28之起伏圖案之形 • 98- 136993.doc 200940601 呆持顯影後之圖案’圖案形狀方面優異。其係由於聚合 物末端經5-降莅烯酸酐所密封之影響。 &lt;最佳溶劑之評價&gt; 替代GBL ’將實施例5中所得之聚合物(Ρ-5)溶於表3所示 之:劑中,除此以外,以與實施例19相同之方式製作正型 感光陡樹月日’進行圖案化特性之評價。此時,纟出顯影前 之塗布膜之平坦性。對6英吋矽晶圓上之直徑上之7點進行 測疋求出其最大膜厚與最小膜厚之差,將除以7點之平 © 均膜厚所得之值(定義為表面平滑性)示於表3中。該值越 小,表面平滑性越好。關於實施例33之丙酮,因於塗布過 程中時,溶劑立刻氣散,故塗布膜形成為星型,無法於石夕 晶圓上均勻地塗布。實施例34之乙酸丁酯不溶解樹脂,從 而無法製作組合物。進而,以開放於空氣中之條件下將組 合物於室溫下放置2週,求出組合物之黏度變化率。實施 例30之NMP、實施例31之二甲基乙醯胺於2週後,受空氣 ❹ 中水分之影響,大量變白而渾濁。實施例32、33中,組合 物之黏度上升。就塗布膜之平坦性、敏感度、膜厚邊際、 穩定性之觀點而言,實施例29之GBL較優異。 &lt;最佳烷氧基矽烷化合物之評價&gt; 於上述各實施例5中所得之鹼溶性樹脂溶液中,相 對於驗溶性樹脂純分1 〇〇質量份,溶解參考例6中所得之感 光性重氮萘醌化合物PAC-1 22質量份,然後溶解5_正己基 間苯二酚(和光純藥工業股份有限公司製造)4質量份,以下 述表4之組合添加並溶解參考例7、卜丨丨中所得之接著助劑 136993.doc •99· 200940601 /合液3〇質量份、或冑售之石夕偶合劑6質量份後m叫 之過;慮器進行過濾從而獲得正型感光性樹脂組合物。以 與上述實施例19相同之方式,對其進行圖案化特性之評 價,觀察比最小曝光量高100 mJ/cm2曝光量之圖案,對排 歹J有5根長度為丨em之丨:丨之線與間隙之圖案進行觀測, 將5根均完全接著之最小尺寸之線與間隙圖案定義為最小 接著圖案,比較顯影時圖案之接著性。將其結果示於表5 中。於此情形時’較小尺寸之線與間隙相接著者的顯影接 © 著性較好。 於實施例35〜43中,接著3微米以下之較小圖案。進而, 藉由旋轉塗布機(東京電子公司製造之Clean Track Mark7) ’將實施例35〜46中所得之正型感光性樹脂組合物 塗布於6英吋矽晶圓上’以130°C乾燥180秒後,利用升溫 式烘箱(Koyo Thermo System公司製造VF 200B),於氮氣 環境下’以320°C加熱1小時,獲得膜厚為10.0 μπι之耐熱 @ 性硬化膜。以高壓鍋(131〇c,3〇氣壓)對該硬化膜形成後 之樣品進行1 〇〇小時處理,然後利用網格試驗(cr〇ss cut test)(JIS K5400)’以切割刀(cutter knife)進行劃痕,以形 成100個1 mm見方之正方形,自上而下贴附赛璐玢 (Cellophane)(註冊商標)膠帶後剝離,數出未附著於赛璐玢 (註冊商標)膠帶上而殘留於基板上之正方形之個數,藉此 對耐水接著性進行評價。於表5中表示膠帶剝離試驗後殘 留於矽晶圓上之正方形之個數。個數越多,接著性越好。 實施例35〜43之固化後膜的耐水接著性較好。實施例35〜43 136993.doc -100· 200940601 由於全部滿足顯影後圖案之接著性、熱硬化後與矽晶圓之 接著性、感光性樹脂組合物之保存穩定性,因此更好。 &lt;藉由熱而引起交聯反應之化合物之評價&gt; 於上述各實施例5中所得之鹼溶性樹脂溶液(p_5)中,相 對於驗溶性樹脂純分1 00質量份,溶解參考例5中所得之感 光性重氮萘酿化合物PAC-1 22質量份,然後溶解5_正己基 間笨二紛(和光純藥工業股份有限公司製造)4質量份,並添 加參考例7中所得之接著助劑溶液3〇質量份,以下述表6之 組合溶解藉由熱而引起交聯反應之化合物,然後利用1 pm 之過渡器進行過濾’從而獲得正型感光性樹脂組合物。以 與上述實施例19相同之方式,對其進行圖案化特性之評 價。將結果示於表7中。利用升溫式烘箱(K〇y〇 Thermo System公司製造之VF 200B),於氮氣環境下,以“(^對 如此所得之附有圖案之石夕晶圓加熱1小時,從而獲得耐熱 性硬化膜。對該附有圖案之矽晶圓之耐熱性硬化膜之膜厚 進行測疋後’將該等石夕晶圓於加熱至8〇〇C之充滿抗姓劑剝 離液TOK 105(東京應化工業公司製造)之浴中浸潰3〇分 鐘,以純水加以清洗後,測量膜厚,從而測定其殘膜率。 進而觀測圖案之狀態。將結果示於表7中。 進而,以與實施例19相同之方式,分別進行正型感光性 樹脂組合物之硬化膜之玻璃轉移溫度(Tg)的測定。將結果 示於表7中。又’對將各感光性樹脂組合物於室溫下放置4 週後之黏度變化率進行測定。亦將其結果示於表7中。實 施例47〜62與實施例63之未添加者相比,玻璃轉移溫度亦 136993.doc -101 - 200940601 較高,耐化學藥品性亦提高,因此更好。 於表7中,CL-1〜CL-13係如下者: [化 96] CL-1三和化學股份有限公司製造商品名為NIKALAC MW 390 H3COH2C'n/CH2OCII3 ii3coii2c、m/^n 人]^ch2och3 H3COH2C ClhOCll,The positive photosensitive resin composition of Comparative Example 8 to U could not be adjusted by using γ-butyrolactone. The positive photosensitive resin composition of Comparative Example 8 to η was developed with a minimum development time of the developing machine, that is, 9 seconds, but the dissolution rate of the unexposed portion was very fast, and the film thickness after development could not be adjusted to 6.75 μΠ1. Unable to get the desired undulating pattern. This is because, in the unexposed portion, the dissolution of the insoluble resin by the naphthalene contained in the pACM cannot be suppressed, and as a result, the difference in the dissolution rate between the unexposed portion and the exposed portion cannot be obtained. In Comparative Examples 12 and 14, the desired pattern of 3 $ was obtained, but the sensitivity required to obtain the pattern was lower. In Comparative Example i 3, the film thickness was adjusted by adjusting the development time so as to reach 6 75 μηι Å but the desired pattern could not be obtained with an exposure amount of 8 〇〇 mj/cm 2 or less. In Comparative Example 14, the film thickness was adjusted by adjusting the development time so as to reach 6.75 μm and had a higher sensitivity 'but the ρ atom 0 having a halogen atom was used in Examples 15 to 28. A undulating pattern having a good film thickness at the time of processing with the same development time and the same exposure amount without a halogen atom is obtained. &lt;Preparation of hardening undulation pattern&gt; An undulating pattern obtained in Examples 15 to 28 was attached at 320 ° C in a nitrogen atmosphere using a temperature rising oven (manufactured by Koyo Thermo Systems, Inc., 2 〇〇 B). The crucible wafer was heated for 1 hour to obtain a hardened relief pattern having a film thickness of 5 μη. In particular, the shape of the undulating pattern of Examples 19 to 28 • 98-136993.doc 200940601 The pattern after the development of the image was excellent in pattern shape. This is due to the effect of the end of the polymer being sealed by 5-norborneuric anhydride. &lt;Evaluation of Optimum Solvent&gt; In the same manner as in Example 19, except that the polymer (Ρ-5) obtained in Example 5 was dissolved in the agent shown in Table 3 instead of GBL. Positive sensitization steep tree month's evaluation of patterning characteristics. At this time, the flatness of the coating film before development was taken out. The 7-point diameter on a 6-inch wafer is measured to determine the difference between the maximum film thickness and the minimum film thickness, which is divided by the 7-point flat film thickness (defined as surface smoothness). ) is shown in Table 3. The smaller the value, the better the surface smoothness. With respect to the acetone of Example 33, since the solvent was immediately dispersed during the coating process, the coating film was formed into a star shape and was not uniformly coated on the Shi Xi wafer. The butyl acetate of Example 34 did not dissolve the resin, so that the composition could not be produced. Further, the composition was allowed to stand at room temperature for 2 weeks while being opened in the air to obtain a viscosity change rate of the composition. The NMP of Example 30 and the dimethyl acetamide of Example 31 were whitened and turbid in a large amount after 2 weeks due to the influence of moisture in the air enthalpy. In Examples 32 and 33, the viscosity of the composition increased. The GBL of Example 29 is superior in terms of flatness, sensitivity, film thickness margin, and stability of the coating film. &lt;Evaluation of the preferred alkoxydecane compound&gt; In the alkali-soluble resin solution obtained in each of the above-mentioned Example 5, the photosensitivity obtained in Reference Example 6 was dissolved in an amount of 1 part by mass based on the pure fraction of the test resin. 22 parts by mass of the diazonaphthoquinone compound PAC-1, and then dissolved 4 parts by mass of 5_n-hexyl resorcinol (manufactured by Wako Pure Chemical Industries, Ltd.), and added and dissolved in the combination of the following Table 4, Reference Example 7, The auxiliaries obtained in 丨丨 136993.doc •99· 200940601 / 3 parts by mass of the combined liquid, or 6 parts by mass of the slick coupling agent sold after the squid; the filter is filtered to obtain positive photosensitivity Resin composition. In the same manner as in the above-described Example 19, the patterning characteristics were evaluated, and a pattern having an exposure amount of 100 mJ/cm 2 higher than the minimum exposure amount was observed, and five lengths of the 歹J were 丨em: 丨之The pattern of the line and the gap was observed, and the line and gap pattern of the minimum size which are all completely followed by five were defined as the minimum following pattern, and the adhesion of the pattern at the time of development was compared. The results are shown in Table 5. In this case, the line of the smaller size and the developer of the gap are better. In Examples 35 to 43, a smaller pattern of 3 microns or less was followed. Further, the positive photosensitive resin composition obtained in Examples 35 to 46 was applied onto a 6-inch wafer by a spin coater (Clean Track Mark 7 manufactured by Tokyo Electronics Co., Ltd.), and dried at 130 ° C. After that, the mixture was heated at 320 ° C for 1 hour in a nitrogen atmosphere using a temperature-raising oven (VF 200B manufactured by Koyo Thermo Systems Co., Ltd.) to obtain a heat-resistant cured film having a film thickness of 10.0 μm. The sample after the formation of the cured film was treated in a pressure cooker (131 ° C, 3 Torr) for 1 〇〇 hour, and then a crutch scis cut test (JIS K5400) was used as a cutter knife. Scratches are formed to form 100 squares of 1 mm square, which are peeled off from top to bottom with Cellophane (registered trademark) tape, and are discarded without being attached to celluloid (registered trademark) tape. The number of squares on the substrate was used to evaluate the water resistance. Table 5 shows the number of squares remaining on the tantalum wafer after the tape peeling test. The more the number, the better the next. The film after curing of Examples 35 to 43 was excellent in water resistance. Examples 35 to 43 136993. doc - 100 · 200940601 It is more preferable because all of the adhesion of the pattern after development, the subsequent adhesion to the ruthenium wafer after thermosetting, and the storage stability of the photosensitive resin composition are satisfied. &lt;Evaluation of the compound which causes the crosslinking reaction by the heat&gt; In the alkali-soluble resin solution (p_5) obtained in each of the above-mentioned Example 5, the reference example 5 was dissolved in 100 parts by mass of the pure fraction of the test-soluble resin. 22 parts by mass of the photosensitive diazo naphthalene compound PAC-1 obtained, and then dissolving 4 parts by mass of 5_n-hexyl stupid (manufactured by Wako Pure Chemical Industries, Ltd.), and adding the obtained in Reference Example 7 The auxiliary solution was dissolved in 3 parts by mass, and the compound which caused the crosslinking reaction by heat was dissolved in a combination of the following Table 6, and then filtered using a 1 pm reactor to obtain a positive photosensitive resin composition. The evaluation of the patterning characteristics was carried out in the same manner as in the above Example 19. The results are shown in Table 7. Using a temperature-raising oven (VF 200B manufactured by K〇y〇 Thermo System, Inc.), a heat-resistant cured film was obtained by heating the patterned patterned stone wafer in the nitrogen atmosphere for 1 hour under a nitrogen atmosphere. After measuring the film thickness of the heat-resistant cured film of the patterned ruthenium wafer, the etched wafer is heated to 8 〇〇C and filled with anti-surname stripping solution TOK 105 (Tokyo Chemical Industry Co., Ltd.) The product was immersed in a bath for 3 minutes, and after washing with pure water, the film thickness was measured to measure the residual film ratio. The state of the pattern was observed. The results are shown in Table 7. Further, with the examples In the same manner, the glass transition temperature (Tg) of the cured film of the positive photosensitive resin composition was measured. The results are shown in Table 7. Further, the respective photosensitive resin compositions were placed at room temperature. The viscosity change rate after 4 weeks was measured. The results are also shown in Table 7. The glass transition temperatures of Examples 47 to 62 were higher than those of Example 63, and the glass transition temperature was also 136,993.doc -101 - 200940601. Chemical resistance is also improved, so it is better. In the seventh, CL-1 to CL-13 are as follows: [Chem. 96] CL-1 Sanwa Chemical Co., Ltd. is manufactured under the trade name of NIKALAC MW 390 H3COH2C'n/CH2OCII3 ii3coii2c, m/^n person]^ch2och3 H3COH2C ClhOCll,

[化 97] CL-2三和化學股份有限公司製造商品名為NIKALAC MX 290 i? h3coh2c—nh-c-nh-ch2och3 [化 98] CL-3三和化學股份有限公司製造商品名為NIKALAC MX 280 1 H3COH2- N ^ N -ch2och3CL-2 Sanwa Chemical Co., Ltd. is manufactured under the trade name NIKALAC MX 290 i? h3coh2c-nh-c-nh-ch2och3 [Chem. 98] CL-3 Sanwa Chemical Co., Ltd. is manufactured under the trade name NIKALAC MX. 280 1 H3COH2- N ^ N -ch2och3

CH3o OCH3 [化 99] CL-4三和化學股份有限公司製造商品名為NIKALAC MX 270 136993.doc -102· 200940601CH3o OCH3 [Chem. 99] CL-4 Sanwa Chemical Co., Ltd. is manufactured under the trade name NIKALAC MX 270 136993.doc -102· 200940601

H3COH2C J\ yCH2OCH3 'N NH3COH2C J\ yCH2OCH3 'N N

M N…N% H3COH2C’ 丫 CH2〇CH3 o [化 100]M N...N% H3COH2C' 丫 CH2〇CH3 o [Chem. 100]

CL-5本州化學工業股份有限公司製造商品名為 TMOM-BPCL-5 Honshu Chemical Industry Co., Ltd. is manufactured under the trade name TMOM-BP

,ch2oc&quot;3,ch2oc&quot;3

[化 101][化101]

CL-6本州化學工業股份有限公司製造商品名為 DMOM-PTBPCL-6 Honshu Chemical Industry Co., Ltd. is manufactured under the trade name DMOM-PTBP

OHOH

[化 102][化102]

CL-7本州化學工業股份有限公司製造商品名為 DMOM-PCCL-7 Honshu Chemical Industry Co., Ltd. is manufactured under the trade name DMOM-PC.

[化 103] CL-8東京化成工業公司製造2,2-雙甲氧基甲基聯苯 ch3-o-ch2[Chem. 103] CL-8 Tokyo Chemical Industry Co., Ltd. manufactures 2,2-bismethoxymethylbiphenyl ch3-o-ch2

CH2-0-CH3 136993.doc -103- 200940601 [化 104]CH2-0-CH3 136993.doc -103- 200940601 [Chem. 104]

CL-9丸善石油化學工業股份有限公司製造商品名為 BANI-XCL-9 Maruzen Petrochemical Industry Co., Ltd. is manufactured under the trade name BANI-X

CL_10丸善石油化學工業股份有限公司製造商品名為CL_10 Maruzen Petrochemical Industry Co., Ltd.

BANI-MBANI-M

[化 106] CL-11東亞合成股份有限公司製造商品名為撕-⑴[化106] CL-11 East Asia Synthetic Co., Ltd. made the trade name tear-(1)

[化 107] 商品名為OXT-221 CL_12東亞合成股份有限公司數造[Chem. 107] The product name is OXT-221 CL_12 East Asia Synthetic Co., Ltd.

[化 108] 2,2-雙(4-缩水甘油氧基 CL-13東京化成工業公司製造 苯基)丙炫 136993.doc -104- 2009406012,2-bis(4-glycidoxyoxy CL-13 manufactured by Tokyo Chemical Industry Co., Ltd.) phenyl 136993.doc -104- 200940601

&lt;對選自由丙烯酸酯化合物、曱基丙烯酸酯化合物、含烯 丙基之化合物、含甲氧基之化合物、苯醋化合物所組1之 群中的至少1種化合物之評價&gt; 於上述各實施例5中所得之鹼溶性樹脂溶液(p_5)中,相 對於鹼溶性樹脂純分1〇〇質量份,溶解參考例5中所得之感 光性重氮萘醌化合物PAC-1 12質量份後,溶解參考例7中 〇 所得之接著助劑溶液30質量份、CL-8 6質量份、CL_9 4質 量份、甲氧基苯基乙酸6質量份,然後以表8所示之組 合,添加選自由丙烯酸酯化合物、曱基丙烯酸酯化合物、 含烯丙基之化合物、含甲氧基之化合物、苯酯化合物所組 成之群中的至少1種化合物,並利用丨μιη之過濾器進行過 /慮’從而獲得正型感光性樹脂組合物。以與上述實施例^ 9 相同之方式’對其進行圖案化特性之評價。將結果示於表 9中。又,此時所需之顯影時間亦一併示於表9中。使用升 ❹ 溫式烘箱(Koyo Thermo System公司製造之vf 200Β),於 氮氣環境下,以32CTC對如此所得之附圖案之矽晶圓加熱J 小時’從而獲得保持顯影後之圖案形狀的耐熱性硬化膜。 實施例64〜76於光敏感度較高、膜厚邊際更廣方面較好。 於表8中,F-1〜F-7係如下者: [化 109]&lt;Evaluation of at least one compound selected from the group consisting of an acrylate compound, a mercapto acrylate compound, an allyl group-containing compound, a methoxy group-containing compound, and a benzene vinegar compound group 1&gt; In the alkali-soluble resin solution (p_5) obtained in Example 5, 12 parts by mass of the photosensitive diazonaphthoquinone compound PAC-1 obtained in Reference Example 5 was dissolved in 1 part by mass of the alkali-soluble resin. 30 parts by mass of the co-agent solution obtained in the reference example 7 in Example 7, CL-8 6 parts by mass, CL_9 4 parts by mass, and 6 parts by mass of methoxyphenylacetic acid were dissolved, and then selected from the combination shown in Table 8, At least one compound selected from the group consisting of an acrylate compound, a mercapto acrylate compound, an allyl group-containing compound, a methoxy group-containing compound, and a phenyl ester compound, and is subjected to a filter using a filter of 丨μηη Thus, a positive photosensitive resin composition was obtained. The patterning characteristics were evaluated in the same manner as in the above Example ^9. The results are shown in Table 9. Further, the development time required at this time is also shown in Table 9. Using the temperature-increasing oven (vf 200 制造 manufactured by Koyo Thermo System), the thus obtained patterned ruthenium wafer was heated at 32 CTC for 7 hours under nitrogen atmosphere to obtain heat-resistant hardening of the pattern shape after development. membrane. Examples 64 to 76 are preferred in that the light sensitivity is high and the film thickness margin is wider. In Table 8, F-1 to F-7 are as follows: [Chem. 109]

F_1和光純藥工業公司製造商品名化成品TRIAM 70S 136993.doc -105· 200940601 /厂 0-C II 〇 II ο [化 110]F_1 and Wako Pure Chemical Industries, Ltd. manufactures the finished product TRIAM 70S 136993.doc -105· 200940601 / Plant 0-C II 〇 II ο [Chem. 110]

F-2和光純藥工業公司製造商品名化成品TRIAMF-2 and Wako Pure Chemical Industries Co., Ltd. manufactures TRIAM

[化 111] F_3和光純藥工業公司製造商品名化成品TRIAM 501 [化 112][Chem. 111] F_3 and Wako Pure Chemical Industries, Ltd. manufactures the finished product TRIAM 501 [Chem. 112]

© F-4新中村化學工業公司製造商品名為4 EG© F-4 Shin-Nakamura Chemical Industry Co., Ltd. manufactured under the trade name of 4 EG

[化 113][化113]

F-5新中村化學工業公司製造商品名為9 EGF-5 New Nakamura Chemical Industry Co., Ltd. manufactured under the trade name of 9 EG

136993.doc -106- 200940601 {式中’ n2為1〜20之整數,平均為9} [化 114] 東京化成工業公司製造商品名為1,3,5-三甲氧基苯 OCHj [化 115] F-7東京化成工業公司製造 h3c^〇hQkhQk〇-L3 &lt;單羧酸化合物之評價&gt; 於上述各實施例5中所得之鹼溶性樹脂溶液(p-5)中相 對於鹼溶性樹脂純分1〇〇質量份,溶解參考例6_所得之感 光性重氮萘醌化合物PACd 12質量份後,溶解參考例7 ^ 所得之接著助劑溶液30質量份、CL_8 6質量份、CL_9々質 〇 量份、溶解抑止劑F-丨6質量份,然後以表1〇所示之組合, 添加單羧酸化合物,並以丨μιη之過濾器進行過濾,從而獲 得正型感光性樹脂組合物。以與上述實施例19相同之方 式,對其進行圖案化特性之評價。又,觀察比最小曝光量 高1〇〇 mJ/cm2曝光量之圖案,對排列有5根長度為i em之 1 : 1之線與間隙的圖案進行觀測,將5根均完全接著之最 小尺寸之線與間隙圖案定義為最小接著圓案,比較顯影時 之圖案之接著性。將該等結果示於表〖丨中。又,此時所需 之顯影時間亦一併示於表丨丨中。使用升溫式烘箱(K〇y〇 136993.doc -107- 200940601136993.doc -106- 200940601 {where n 2 is an integer from 1 to 20, with an average of 9} [Chem. 114] Tokyo Chemical Industry Co., Ltd. manufactured under the trade name of 1,3,5-trimethoxybenzene OCHj [Chem. 115] F-7 Tokyo Chemical Industry Co., Ltd. manufactures h3c^〇hQkhQk〇-L3 &lt;Evaluation of monocarboxylic acid compound&gt; In the alkali-soluble resin solution (p-5) obtained in each of the above Examples 5, it is pure with respect to the alkali-soluble resin. After dissolving 12 parts by mass of the photosensitive diazonaphthoquinone compound PACd obtained in Reference Example 6_, 30 parts by mass of the auxiliary solution obtained in Reference Example 7 ^, CL_8 6 parts by mass, CL_9 tannin was dissolved. 6 parts by mass of the dissolution inhibitor F-丨 was added, and then a monocarboxylic acid compound was added in the combination shown in Table 1A, and filtered with a filter of 丨μηη to obtain a positive photosensitive resin composition. The patterning characteristics were evaluated in the same manner as in the above Example 19. Further, a pattern having an exposure amount of 1 〇〇mJ/cm 2 higher than the minimum exposure amount was observed, and a pattern of five lines and gaps having a length of 1 : 1 was observed, and the minimum size of all five was completely followed. The line and gap pattern is defined as the minimum rounding case, and the continuity of the pattern during development is compared. These results are shown in the table 丨. Further, the development time required at this time is also shown in the table. Use a warming oven (K〇y〇 136993.doc -107- 200940601

Thermo System公司製造之VF 200B),於氮氣環境下,以 320°C對如此所得之附有圖案之矽晶圓加熱1小時,從而獲 得保持顯影後之圖案形狀的耐熱性硬化膜。實施例79〜85 於敏感度較高、膜厚邊際更廣方面較好。 〈實施例89〜99、比較例15〜21 (負型感光性樹脂組合物之製備) 根據下述表12之組合,在上述各實施例4〜14、及比較例 1〜7中所得之鹼溶性樹脂溶液(P_4〜p_21)中,溶解2-[2-(4-© 甲基苯基磺醯氧基亞胺基)-2,3-二氫噻吩-3-亞基]-2-(2-甲 基笨基)乙腈(Irgacure PAG 121,CIBA.JAPAN公司製造)5 質量份’作為藉由照射活性光線而產生酸之化合物 (PAG);溶解CL-4 :烷氧基曱基化尿素樹脂(品號為MX-270 ’三和化學公司製造,商標名為NIKALAC,單體95% 以上)30質量份,作為藉由酸之作用可交聯之化合物;進 而添加並溶解參考例7中所得之接著助劑溶液D-1 30質量 份’利用1 Pm之過濾器進行過濾,從而獲得負型感光性樹 脂組合物。 &lt;負型感光性樹脂組合物之評價&gt; 圖案化特性評價 使用自上述實施例89〜99、及比較例15〜2 1中所得之負型 感光性樹脂組合物’旋塗於6英吋矽晶圓上,並且於加熱 板上以110。(:烘烤3分鐘,從而獲得厚度約為15 μιη之膜。 對該膜藉由i線步進機曝光機(ΝΙΚ〇Ν公司製造,NSR 2005i8A) ’通過主光罩’以階段性地改變曝光量之方式進 136993.doc •108· 200940601 行曝光。以120°C對經曝光之晶圓進行3分鐘之曝光後烘 烤,使用2.3 8%之丁厘八11水溶液((:1^111八1^丁公司製造之入2 300MIF)進行顯影,繼而,以去離子水進行沖洗,從而獲 得起伏圖案。於顯微鏡下對該起伏圖案進行觀察,將曝光 區域之保持有約90%之膜厚之部分的曝光量設為敏感度(設 為最小曝光量),將未曝光部之正方形起伏圖案完全溶解 除去後之通道尺寸(via size)定義為解析度。將結果示於以 下表13中。又,製作初始膜厚自15 μιη每次增厚0.5 μπι而 〇 成之矽晶圓,將初始膜厚為1 5 μιη時所求出之最小曝光量 及顯影時間加以固定,進行蝕刻評價時,求出可顯影之膜 厚邊際。將結果記載於表13中。實施例89〜99與比較例 15〜21相比,其於具有高敏感度、膜厚邊際較廣、且不含 鹵原子方面較優異。 [表1]The VF 200B manufactured by Thermo System, Inc., was heated at 320 ° C for 1 hour in a nitrogen atmosphere to obtain a heat-resistant cured film which maintained the pattern shape after development. Examples 79 to 85 are preferred in that the sensitivity is high and the film thickness margin is wider. <Examples 89 to 99, and Comparative Examples 15 to 21 (Preparation of Negative Photosensitive Resin Composition) According to the combination of the following Table 12, the bases obtained in each of Examples 4 to 14 and Comparative Examples 1 to 7 were used. In the soluble resin solution (P_4~p_21), 2-[2-(4-©methylphenylsulfonyloxyimino)-2,3-dihydrothiophene-3-ylidene-2-( 2-Methylphenyl)acetonitrile (Irgacure PAG 121, manufactured by CIBA. JAPAN) 5 parts by mass 'as a compound which generates an acid by irradiation with active light (PAG); dissolved CL-4: alkoxylated urea 30 parts by mass of resin (product number MX-270 'manufactured by Sanwa Chemical Co., Ltd., trade name: NIKALAC, monomer 95% or more) as a compound crosslinkable by the action of an acid; further added and dissolved in Reference Example 7 The resulting auxiliary solution D-1 30 parts by mass 'filtered with a filter of 1 Pm to obtain a negative photosensitive resin composition. &lt;Evaluation of Negative Photosensitive Resin Composition&gt; Evaluation of Patterning Properties The negative photosensitive resin composition obtained in the above Examples 89 to 99 and Comparative Examples 15 to 21 was spin-coated at 6 inches. On the wafer, and on the hot plate with 110. (: Baking for 3 minutes to obtain a film having a thickness of about 15 μm. The film was changed stepwise by the i-line stepper exposure machine (manufactured by Nippon Co., Ltd., NSR 2005i8A) 'through the main mask' Exposure amount into 136993.doc •108· 200940601 line exposure. Exposure of the exposed wafer to the exposed wafer at 120 °C for 3 minutes, using 2.3 8% of the butyl PCT solution ((: 1^111 Development was carried out by adding 2 300 MIF), and then rinsing with deionized water to obtain an undulating pattern. The undulating pattern was observed under a microscope to maintain the exposed area with a film thickness of about 90%. The exposure amount of the portion was set as the sensitivity (the minimum exposure amount), and the via size after the square undulation pattern of the unexposed portion was completely dissolved and removed was defined as the resolution. The results are shown in Table 13 below. Further, when the initial film thickness is increased from 15 μm to 0.5 μm each time, the minimum exposure amount and the development time obtained when the initial film thickness is 15 μm are fixed, and when the etching evaluation is performed, Find the developable film thickness Inter. The results are shown in Table 13. Comparative Example 15~21 89~99 compared with that having a high sensitivity, the film thickness of the marginal Example wider and more excellent in terms of a halogen-free. [Table 1]

鹼溶性樹脂 感光性重氮覼混合物 有機溶劑 實施例15 Ρ-1100質量份 PAC-122質量份 GBL 實施例16 Ρ-2100質量份 PAC-1 22質量份 GBL 實施例17 Ρ-3100質量份 PAC-122質量份 GBL 實施例18 Ρ_4100質量份 PAC-122質量份 GBL 實施例19 Ρ-5100質量份 PAC-122質量份 GBL 實施例20 Ρ-6100質量份 PAC-122質量份 GBL 實施例21 Ρ-13100質量份 PAC-122質量份 GBL 實施例22 Ρ-14100質量份 PAC-122質量份 GBL 實施例23 Ρ-15100質量份 PAC-122質量份 GBL 實施例24 Ρ-16100質量份 PAC-122質量份 GBL 實施例25 Ρ-17100質量份 PAC-122質量份 GBL 實施例26 Ρ-18100質量份 PAC-122質量份 GBL 實施例27 Ρ-19100質量份 PAC-2 22質量份 GBL 實施例28 Ρ-20 100質量份 PACM22質量份 GBL 比較例8 Ρ-7100質量份 PAC-122質量份 NMP 136993.doc -109- 200940601Alkali-soluble resin photosensitive diazonium mixture organic solvent Example 15 Ρ-1100 parts by mass PAC-122 parts by mass GBL Example 16 Ρ-2100 parts by mass PAC-1 22 parts by mass GBL Example 17 Ρ-3100 parts by mass PAC- 122 parts by mass GBL Example 18 Ρ 4100 parts by mass PAC-122 parts by mass GBL Example 19 Ρ-5100 parts by mass PAC-122 parts by mass GBL Example 20 Ρ-6100 parts by mass PAC-122 parts by mass GBL Example 21 Ρ-13100 Parts by mass PAC-122 parts by mass GBL Example 22 Ρ-14100 parts by mass PAC-122 parts by mass GBL Example 23 Ρ-15100 parts by mass PAC-122 parts by mass GBL Example 24 Ρ-16100 parts by mass PAC-122 parts by mass GBL Example 25 Ρ-17100 parts by mass of PAC-122 parts by mass GBL Example 26 Ρ-18100 parts by mass PAC-122 parts by mass GBL Example 27 Ρ-19100 parts by mass PAC-2 22 parts by mass GBL Example 28 Ρ-20 100 Parts by mass PACM 22 parts by mass GBL Comparative Example 8 Ρ-7100 parts by mass PAC-122 parts by mass NMP 136993.doc -109- 200940601

比較例9 P-8100質量份 PAC-122質量份 NMP 比較例10 P-9100質量份 PAC-122質量份 NMP 比較例11 P-10100質量份 PAC-122質量份 NMP 比較例12 P-11100質量份 PAC-122質量份 GBL 比較例13 P-12100質量份 PAC-122質量份 GBL 比較例14 P-21100質量份 PAC-122質量份 GBLComparative Example 9 P-8100 parts by mass of PAC-122 parts by mass of NMP Comparative Example 10 P-9100 parts by mass of PAC-122 parts by mass of NMP Comparative Example 11 P-10100 parts by mass of PAC-122 parts by mass of NMP Comparative Example 12 P-11100 parts by mass PAC-122 parts by mass GBL Comparative Example 13 P-12100 parts by mass PAC-122 parts by mass GBL Comparative Example 14 P-21100 parts by mass PAC-122 parts by mass GBL

[表2][Table 2]

I線曝光最小曝 光量(mJ/cm2) Tg 0C) 顯影初始膜厚 邊際(/m) 鹼溶性樹脂之365 nm下之吸光度 鹼溶性樹脂中 之氟原子% 實施例15 200 240 1.0 0.018 0% 實施例16 300 239 1.4 0.024 0% 實施例17 200 240 1.0 0.016 0% 實施例18 250 249 1.4 0.016 0% 實施例19 275 244 1.4 0.017 0% 實施例20 275 295 0.8 0.109 0% 實施例21 275 261 1.2 0.028 0% 實施例22 275 265 1.4 0.024 0% 實施例23 300 248 1.4 0.059 0% 實施例24 275 252 1.2 0.032 0% 實施例25 275 262 1.4 0.025 0% 實施例26 350 247 1.4 0.006 0% 實施例27 275 245 1.0 0.109 0% 實施例28 325 245 1.4 0.054 0% 比較例8 無法觀測 - 0.112 0% 比較例9 無法觀測 - 0.323 0% 比較例10 無法觀測 - 0.016 0% 比較例11 無法觀測 0.098 0% 比較例12 525 297 0.6 0.122 0% 比較例13 &gt;800 - 0.945 0% 比較例14 350 295 0.4 0.182 18% 110- 136993.doc 200940601 ο 【εί 组合物黏 度變化率 +2.4% | -1.6% | -3.5% | +12.5% | +83% | 無法評價1 表面 平滑性 0.0127 0.0265 0.0185 0.1492 無法評價 無法評償 n s 1 〇 — 〇 〇 無法評價 無法評價 最小曝光量 (mJ/cm2) fS 350 350 350 無法評價 無法評償 溶解性 來 $ Ϊ 不溶 溶解溶劑 GBL NMP 二甲基乙醢胺 環己酮 丙酮 1乙酸丁酯I |實施例29 |實施例30 |實施例31 |實施例32 |實施例33 |實施例34 136993.doc -Ill - 200940601 烷氧基發烷化合物 D-1溶液30重量份 | D-2溶液20重量份D-3溶液10重量份 | D-3溶液30重量份 | D-4溶液30重量份 | tie* &lt;&lt; 輙 Μ 齚 i 4uft 较 % Φ 、,1 P § 柜 W &lt;&lt; % t/) S «fs »-gg ”1 w a K N-(3-三乙氧基矽烷基丙基)脲(AZMAX股份有限公司製造商品 名為SIU 9055.0)6重量份 3-(間胺基苯氧基)丙基三甲氧基矽烷(AZMAX股份有限公司製 造商品名為SLA 0598.0)6重量份 2-(三甲氧基矽烷基乙基)吡啶(AZMAX股份有限公司製造商品 名為SIT 8396.0)6重量份 裨 id 碱 ΙΪΓ &lt;&lt; Η Ϊ % ”1傘 軾S ¢3 乙烯基三乙氧基矽烷(信越化學工業公司製造商品名為KBE 100)6重量份 未添加 1 PAC-1 22重量份 22重量份 22重量份 22重量份 22重量份 22重量份 22重量份 22重量份 22重量份 22重量份 22重量份 22重量份 聚合物 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 P-5 100重量份 |實施例35 丨實施例36 |實施例37 |實施例38 實施例39 實施例40 實施例41 實施例42 實施例43 實施例44 實施例45 |實施例46 136993.doc -112- 200940601 [表5] 最小需要曝 光量 (mJ/cm2) 最小爆光量+ 100 mJ/cm2 下之 最小接著圖案 高壓錢試驗 100 hr 拉帶測試 顯影初始膜厚 邊除(/ΛΠ) 實施例35 275 1 100 1.4 實施例36 275 2 99 1.4 實施例37 275 3 99 1.4 實施例38 275 2 100 1.4 實施例39 275 1 98 1.4 實施例40 275 2 99 1.4 實施例41 275 3 100 1.4 實施例42 275 1 100 1.4 實施例43 275 1 97 1.4 實施例44 275 25 0 1.4 實施例45 275 40 0 1.4 實施例46 275 80 0 1.4 [表6]Minimum exposure of I-line exposure (mJ/cm2) Tg 0C) Development initial film thickness margin (/m) Absorbance at 365 nm of alkali-soluble resin Fluorine atom % in alkali-soluble resin Example 15 200 240 1.0 0.018 0% Implementation Example 16 300 239 1.4 0.024 0% Example 17 200 240 1.0 0.016 0% Example 18 250 249 1.4 0.016 0% Example 19 275 244 1.4 0.017 0% Example 20 275 295 0.8 0.109 0% Example 21 275 261 1.2 0.028 0% Example 22 275 265 1.4 0.024 0% Example 23 300 248 1.4 0.059 0% Example 24 275 252 1.2 0.032 0% Example 25 275 262 1.4 0.025 0% Example 26 350 247 1.4 0.006 0% Example 27 275 245 1.0 0.109 0% Example 28 325 245 1.4 0.054 0% Comparative Example 8 Unobservable - 0.112 0% Comparative Example 9 Unobservable - 0.323 0% Comparative Example 10 Unobservable - 0.016 0% Comparative Example 11 Unable to observe 0.098 0 % Comparative Example 12 525 297 0.6 0.122 0% Comparative Example 13 &gt; 800 - 0.945 0% Comparative Example 14 350 295 0.4 0.182 18% 110- 136993.doc 200940601 ο [εί Composition viscosity change rate +2.4% | -1.6% | -3.5% | +12.5% | +83% | Unable to evaluate 1 surface Slipability 0.0127 0.0265 0.0185 0.1492 Unable to evaluate the unrecognizable ns 1 〇 — 〇〇 Unable to evaluate the minimum exposure (mJ/cm2) fS 350 350 350 Unable to evaluate the unsolvable solubility to $ Ϊ Insoluble solvent Solvent GBL NMP Ethylamine cyclohexanone acetone 1 butyl acetate I | Example 29 | Example 30 | Example 31 | Example 32 | Example 33 | Example 34 136993.doc -Ill - 200940601 Alkoxyl compound 30 parts by weight of D-1 solution | D-2 solution 20 parts by weight of D-3 solution 10 parts by weight | D-3 solution 30 parts by weight | D-4 solution 30 parts by weight | tie* &lt;&lt; 輙Μ 齚i 4uft % Φ , , 1 P § Cabinet W &lt;&lt; % t/) S «fs »-gg ”1 wa K N-(3-triethoxydecylpropyl)urea (product manufactured by AZMAX Co., Ltd.) Named SIU 9055.0) 6 parts by weight of 3-(m-aminophenoxy)propyltrimethoxydecane (trade name SLA 0598.0, manufactured by AZMAX Co., Ltd.) 6 parts by weight of 2-(trimethoxydecylalkylethyl) Pyridine (trade name SIT 8396.0, manufactured by AZMAX Co., Ltd.) 6 parts by weight 裨id alkali ΙΪΓ &lt;&lt; Η Ϊ % ”1 umbrella 轼S ¢3 vinyl Triethoxy decane (trade name KBE 100, manufactured by Shin-Etsu Chemical Co., Ltd.) 6 parts by weight unadded 1 PAC-1 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight 22 parts by weight of polymer P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight P-5 100 parts by weight | Example 35 丨 Example 36 | Example 37 | Example 38 Example 39 Example 40 Example 41 Example 42 Example 43 Example 44 Example 45 | Example 46 136993.doc -112- 200940601 [Table 5] Minimum required exposure amount (mJ/cm2) Minimum amount of exposure + 100 mJ/cm2 minimum follow-up pattern high pressure money test 100 hr draw tape test development initial film thickness edge division (/ΛΠ) Example 35 275 1 100 1.4 Example 36 275 2 99 1.4 Example 37 275 3 99 1.4 Implementation Example 38 275 2 100 1.4 Example 39 275 1 98 1.4 Example 40 275 2 99 1.4 Example 41 275 3 100 1.4 Example 42 27 5 1 100 1.4 Example 43 275 1 97 1.4 Example 44 275 25 0 1.4 Example 45 275 40 0 1.4 Example 46 275 80 0 1.4 [Table 6]

聚合物 PAC-1 藉由熱而引起交獬反應之化合物 實施例47 P-5 100重量份 22重量份 (Χ·110重量份 實施例48 P-5 100重量份 22重量份 CL~2 10重量份 實施例49 Ρ·5 100重量份 22重量份 CL-3 10重量份 實施例50 Ρ-5 100重量份 22重量份 CL4 10重董份 實施例51 Ρ-5 100重量份 22重量份 CL-5 10重董份 實施例52 Ρ-5 100重量份 22重量份 CL-6 10重量份 實施例53 Ρ-5 100重量份 22重量份 CL-7 10重量份 實施例54 Ρ-5 100重量份 22重量份 CL-8 10重量份 實施例55 Ρ-5 100重量份 22重量份 CL-9 10重量份 實施例56 Ρ-5 100重量份 22重量份 CL-10 10重量份 實施例57 Ρ-5100重量份 22重量份 CL-1110重量份 實施例58 Ρ-5 100重量份 22重量份 CL-12 10重量份 實施例59 Ρ-5 100重量份 22重量份 CL~13 10重量份 實施例60 Ρ·5 100重量份 22重量份 CL&gt;4 5重量份 實施例61 Ρ-5 100重量份 22重量份 CL-4 20重量份 實施例62 Ρ-5 100重董份 22重量份 CL-4 30重量份 實施例63 Ρ-5 100重量份 22重量份 未添加 136993.doc •113- 200940601 [表7] 最小需要 嗪光量 (mJ/cm2) 顙影初始膜 厚邊|^〇om) 玻璃轉移 a 度 〇c) 耐化學鸚品 性试驗殘臈 率(%&gt; 耐化學藥 品性试驗 •案觀察 室SL4迴 黏度變化 實施例47 325 1.4 272 100% 無問題 13% 實施例48 300 1,4 263 100% 無問題 5% 資施例49 300 1.4 264 100% 無問題 6% 實施例50 300 1.4 268 100% 無問鑷 6% 實施例51 275 1.4 264 100% 無問题 7% 實施例52 275 1.4 261 100% 無問题 5% 實施例53 275 1.4 259 100% 無問題 5% 實施例54 250 1.4 265 100% 無問題 4% 實施例55 250 1.4 259 100% 無問題 4% 實施例56 250 1.4 257 100% 無問題 4% 實施例57 275 1.4 260 100% 無問題 6% 實施例58 275 1.4 259 100% 無問題 5% 實施例59 350 1.4 255 100% 無問題 16% 實施例60 275 1.4 261 100% 無問題 5% 實施例61 325 1.4 269 100% 無問題 8% 實施例62 350 1.4 269 100% 無問題 11% 實施例63 275 1.4 244 98% 有龜裂 4%Polymer PAC-1 Compound which causes exchange reaction by heat Example 47 P-5 100 parts by weight 22 parts by weight (Χ·110 parts by weight Example 48 P-5 100 parts by weight 22 parts by weight CL~2 10 weight Example 49 Ρ·5 100 parts by weight 22 parts by weight CL-3 10 parts by weight Example 50 Ρ-5 100 parts by weight 22 parts by weight CL4 10 parts by weight of Example 51 Ρ-5 100 parts by weight 22 parts by weight CL- 5 10 heavy Dong Example 52 Ρ-5 100 parts by weight 22 parts by weight CL-6 10 parts by weight Example 53 Ρ-5 100 parts by weight 22 parts by weight CL-7 10 parts by weight Example 54 Ρ-5 100 parts by weight 22 parts by weight of CL-8 10 parts by weight of Example 55 Ρ-5 100 parts by weight of 22 parts by weight of CL-9 10 parts by weight of Example 56 Ρ-5 100 parts by weight of 22 parts by weight of CL-10 10 parts by weight of Example 57 Ρ- 5100 parts by weight 22 parts by weight CL-1110 parts by weight Example 58 Ρ-5 100 parts by weight 22 parts by weight CL-12 10 parts by weight Example 59 Ρ-5 100 parts by weight 22 parts by weight CL~13 10 parts by weight Example 60 Ρ·5 100 parts by weight 22 parts by weight CL&gt; 4 5 parts by weight of Example 61 Ρ-5 100 parts by weight 22 parts by weight CL-4 20 parts by weight Example 62 Ρ-5 100 weight Dong 22 weight Part CL-4 30 parts by weight Example 63 Ρ-5 100 parts by weight 22 parts by weight not added 136993.doc •113- 200940601 [Table 7] Minimum required amount of azine light (mJ/cm2) 初始 initial film thickness edge|^〇 Om) glass transfer a degree 〇 c) chemical resistance test residue rate (%> chemical resistance test case SL4 back viscosity change example 47 325 1.4 272 100% no problem 13% implementation Example 48 300 1,4 263 100% No problem 5% Example 49 300 1.4 264 100% No problem 6% Example 50 300 1.4 268 100% No problem 6% Example 51 275 1.4 264 100% No problem 7 % Example 52 275 1.4 261 100% No problem 5% Example 53 275 1.4 259 100% No problem 5% Example 54 250 1.4 265 100% No problem 4% Example 55 250 1.4 259 100% No problem 4% Implementation Example 56 250 1.4 257 100% No problem 4% Example 57 275 1.4 260 100% No problem 6% Example 58 275 1.4 259 100% No problem 5% Example 59 350 1.4 255 100% No problem 16% Example 60 275 1.4 261 100% No problem 5% Example 61 325 1.4 269 100% No problem 8% Example 62 350 1.4 269 100% No problem 11% Example 63 275 1.4 24 498% of crack 4%

[表8] 聚合物 PAC-1 (F)化合物 實施例64 P-5 100重量份 12重董份 F-1 5重量份 實施例65 P-5 100重量份 12重量份 F-11〇重量份 實施例66 P-5 100重量份 12重量份 F-120重量份 實施例67 P-5 100重量份 12重量份 - F-2 5重量份 實施例68 P-5100重量份 12重量份 ---歹-3 5重量份 實施例69 P-5 100重量份 12重量份 -- 尹-4 5重量份 實施例70 P-5 100重量份 12重量份 _ F-4 10重量份 實施例71 P-5 100重量份 12重量份 — F-5 5重量份 實施例72 P-5 100重量份 12重量份 Κ·6 5重量份 實施例73 P-5100重量份 12重量份 IV7 5重量份 實施例74 P-5 100重量份 12重量份 F-7 10重量份 實施例75 P-5 100重量份 12重量份 &quot;f戍四蘚三丙烯酸酯5重量份 實施例76 P-5 100重量份 12重量份 率Λ四錄二丙稀酸酿W重量份 實施例77 P-5100重量份 12重量份 無 實施例78 P-5100重量份 20重量份 無 136993.doc -114· 200940601 [表9] PAC-1 (F)化合物 I線黍光最小秦 光量(mJ/cm2) 需要顙影 時間(秒) 顢影初始旗厚 邊際〇um) 實施例64 12重董份 F-1 5重量份 175 70 1·6 實旄例65 12重量份 F-110重量份 175 82 1.6 實施例66 12重量份 F-1 20重量份 150 98 1.4 實施例67 12重董份 F-2 S重量份 200 65 1.6 實施例68 12重量份 F-3 5重量份 200 62 1.6 實施例69 12重董份 F-4 5重量份 175 68 1.6 實施例70 12重量份 F&gt;4 10重量份 150 75 1.6 實施例71 12重量份 F-5 5重量份 200 74 1.6 實施例72 12重量份 F_6 5重量份 200 66 1.6 實施例73 12重量份 F-7 5重量份 175 71 1.6 實施例74 12重量份 F-710重量份 175 85 1.6 實施例75 12重量份 F-8季戊四酵三丙 烯酸酯5重量份 175 74 1.6 實施例76 12重量份 F-8季戊四酵三丙 烯酸麴10重量份 ISO 86 1.4 實施例77 12重量份 未添加 225 57 1.6 實施例78 20重量份 未添加 250 85 1.4[Table 8] Polymer PAC-1 (F) Compound Example 64 P-5 100 parts by weight 12 parts Dong F-1 5 parts by weight Example 65 P-5 100 parts by weight 12 parts by weight F-11 parts by weight Example 66 P-5 100 parts by weight 12 parts by weight F-120 parts by weight Example 67 P-5 100 parts by weight 12 parts by weight - F-2 5 parts by weight Example 68 P-5100 parts by weight 12 parts by weight -歹-3 5 parts by weight of Example 69 P-5 100 parts by weight 12 parts by weight - Yin-4 5 parts by weight Example 70 P-5 100 parts by weight 12 parts by weight _F-4 10 parts by weight Example 71 P- 5 100 parts by weight 12 parts by weight - F-5 5 parts by weight Example 72 P-5 100 parts by weight 12 parts by weight Κ·6 5 parts by weight Example 73 P-5100 parts by weight 12 parts by weight IV7 5 parts by weight Example 74 P-5 100 parts by weight 12 parts by weight F-7 10 parts by weight Example 75 P-5 100 parts by weight 12 parts by weight &quot;f戍tetradecane triacrylate 5 parts by weight Example 76 P-5 100 parts by weight 12 weight Fractions Λ 四录 Diacrylic acid brewing W parts by weight Example 77 P-5100 parts by weight 12 parts by weight None Example 78 P-5100 parts by weight 20 parts by weight No 136993.doc -114· 200940601 [Table 9] PAC- 1 (F) Compound I 黍Minimum amount of Qin light (mJ/cm2) Requires shadow time (seconds) Shadow initial flag thickness margin um) Example 64 12 heavy Dong F-1 5 parts by weight 175 70 1·6 Example 65 12 parts by weight F - 110 parts by weight 175 82 1.6 Example 66 12 parts by weight F-1 20 parts by weight 150 98 1.4 Example 67 12 parts by weight F-2 S parts by weight 200 65 1.6 Example 68 12 parts by weight F-3 5 parts by weight 200 62 1.6 Example 69 12 heavy Dong F-4 5 parts by weight 175 68 1.6 Example 70 12 parts by weight F &gt; 4 10 parts by weight 150 75 1.6 Example 71 12 parts by weight F-5 5 parts by weight 200 74 1.6 Implementation Example 72 12 parts by weight F_6 5 parts by weight 200 66 1.6 Example 73 12 parts by weight F-7 5 parts by weight 175 71 1.6 Example 74 12 parts by weight F-710 parts by weight 175 85 1.6 Example 75 12 parts by weight F-8 Pentaerythritol triacrylate 5 parts by weight 175 74 1.6 Example 76 12 parts by weight of F-8 pentaerythritol triacrylate hydrazine 10 parts by weight ISO 86 1.4 Example 77 12 parts by weight not added 225 57 1.6 Example 78 20 Weight parts not added 250 85 1.4

[表 10] 聚合物 PAC-1 iG)於分子内具有羧基之化合物 實施例79 Ρ-5100重量份 12重量份 香茅酸5重量份 實施例80 Ρ-5100重置份 12重量份 香茅酸10重董份 實施例81 Ρ-5 100重量份 12重量份 香茅酸20重量份 實施例82 Ρ-5100重量份 12重董份 甲氧基苯基乙酸5重量份 實施例83 Ρ-5100重量份 12重量份 甲氧基苯基乙酸10重量份 實施例84 Ρ-5 100重量份 12重量份 間甲苯甲酸S重量份 實施例85 P-S 100重董份 12重量份 間甲苯甲酸10重量份 實施例86 Ρ-5 100重量份 12重量份 乙酸5重量份 實施例87 Ρ-5 100重董份 12重量份 乙酸10重量份 實施例88 Ρ-5 100重量份 12重量份 未添加 136993.doc 115- 200940601 [表 11] PAC-1 (G)於分子内具有 羧基之化合物 I線曝光最 小嗪光量 (mJ/cm2) 需要顯影 時間(秒) 顯影初始膜 厚邊除(/«*) 實施例79 12重量份 香茅酸5重量份 175 72 1.6 實施例80 12重量份 香茅酸10重量份 175 65 1.6 實施例81 12重量份 香茅酸20重量份 175 59 1.4 實施例82 12重量份 甲氧基苯基乙酸 5重量份 175 69 1.6 實施例83 12重量份 甲氣基苯基乙酸 10重量份 175 65 1.6 實施例84 12重量份 間甲苯甲酸 5重量份 175 66 1.6 實施例85 12重量份 間甲苯甲酸 10重量份 175 60 1.6 實施例86 12重量份 乙酸5重量份 250 71 1.6 實施例87 12重量份 乙酸10重量份 250 65 1.6 實施例88 12重量份 未添加 250 78 1.4 [表 12][Table 10] Polymer PAC-1 iG) Compound having a carboxyl group in the molecule Example 79 Ρ-5100 parts by weight 12 parts by weight citronellic acid 5 parts by weight Example 80 Ρ-5100 reset portion 12 parts by weight citronellic acid 10 weights Dongfang Example 81 Ρ-5 100 parts by weight 12 parts by weight citronellic acid 20 parts by weight Example 82 Ρ-5100 parts by weight 12 parts Dong methoxyphenyl acetic acid 5 parts by weight Example 83 Ρ-5100 weight 12 parts by weight of methoxyphenylacetic acid 10 parts by weight of Example 84 Ρ-5 100 parts by weight 12 parts by weight of m-toluic acid S parts by weight Example 85 PS 100 heavy Dong 12 parts by weight of m-toluic acid 10 parts by weight Example 86 Ρ-5 100 parts by weight 12 parts by weight acetic acid 5 parts by weight Example 87 Ρ-5 100 parts Dong 12 parts by weight acetic acid 10 parts by weight Example 88 Ρ-5 100 parts by weight 12 parts by weight not added 136993.doc 115- 200940601 [Table 11] PAC-1 (G) Compound I having a carboxyl group in the molecule I line exposure Minimum amount of xylazine light (mJ/cm2) Development time required (seconds) Development initial film thickness side division (/«*) Example 79 12 5 parts by weight of citronellic acid 175 72 1.6 Example 80 12 parts by weight of citronellic acid 10 parts by weight 175 65 1.6 Example 81 12 parts by weight of citronellic acid 20 parts by weight 175 59 1.4 Example 82 12 parts by weight of methoxyphenylacetic acid 5 parts by weight 175 69 1.6 Example 83 12 parts by weight of methane phenylacetic acid 10 parts by weight 175 65 1.6 Example 84 12 parts by weight of m-toluic acid 5 parts by weight 175 66 1.6 Example 85 12 parts by weight of m-toluic acid 10 parts by weight 175 60 1.6 Example 86 12 parts by weight acetic acid 5 parts by weight 250 71 1.6 Example 87 12 weight Partial acetic acid 10 parts by weight 250 65 1.6 Example 88 12 parts by weight not added 250 78 1.4 [Table 12]

鹼溶性樹脂 PAG CL-4 D-1 有機溶劑 實施例89 Ρ-4100質量份 5質量份 30質量份 30質量份 GBL 實施例90 Ρ-5100質量份 5質量份 30質量份 30質量份 GBL 實施例91 Ρ-6100質量份 S質量份 30質量份 30質董份 GBL 實施例92 p-moo質量份 5質量份 30質量份 30質量份 GBL 實施例93 Ρ·14 100質量份 5質量份 30質量份 3〇質量份 GBL 實施例94 Ρ-15100質量份 5質量份 3〇質量份 30質量份 GBL 實施例95 Ρ-16100質量份 5質量份 30質量份 3〇質量份 GBL 實施例96 Ρ-17100質量份 5質董份 30質董份 30質董份 GBL 實施例97 Ρ-18100質量份 5質董份 30質量份 3〇質董份 GBL ΪΓ施例98 Ρ-19100質董份 5質量份 30質董份 3〇質董份 GBL 實施例99 Ρ-20 100質量份 5質量份 30質量份 3〇質量份 GBL 比較例15 Ρ-7100質量份 5質董份 30質量份 30質量份 NMP 比較例16 Ρ-8100質量份 5質量份 3〇質量份 30質量份 NMP 比較例17 Ρ-9100質董份 S質量份 30質量份 3〇質量份 NMP 比較例18 Ρ-10100質量份 5質量份 30質量份 3〇質量份 NMP 比較例19 Ρ-11100質量份 5質量份 3〇質量份 3〇質量份 GBL 比較例20 Ρ-12 100蜇董份 S質量份 3〇質量份 3〇質量份 GBL 比較例21 Ρ-23100質量份 5質量份 Γ 30質量份 Γ30質量份 GBL 136993.doc •116, 200940601 [表 13] 鹼溶性樹脂 最小曝光量 (mJ/cm2) 解析度 〇um) 顯影初始膜 厚邊際〇um) 鹼溶性樹脂中 之氟原子(%) 實施例89 P-4 100質量份 450 15 1.0 0 實施例90 P-5100質量份 450 14 1.5 0 實施例91 P-6100質量份 400 18 1.0 0 實施例92 P-13100質量份 375 15 1.5 0 實施例93 P-14100質量份 350 14 1.0 0 實施例94 P-15100質量份 375 15 1.5 0 實施例95 P-16100質量份 400 14 1.0 0 實施例96 P-17100質量份 450 16 1.5 0 實施例97 P-18100質量份 600 10 1.0 0 實施例98 P-20100質量份 450 18 1.0 0 實施例99 P-22100質量份 500 17 1.0 0 比較例15 P-7 100質量份 800 18 0.5 0 比較例16 P-8 100質量份 900 20 0.5 0 比較例Π P-9100質量份 650 15 0.5 0 比較例18 P-10 100質量份 &gt;1000 - 0 比較例19 P-11 100質量份 850 18 0.5 0 比較例20 P-12100質量份 950 25 0.5 0 比較例21 P-23100質量份 600 15 0.5 18Alkali-soluble resin PAG CL-4 D-1 Organic solvent Example 89 Ρ-4100 parts by mass 5 parts by mass 30 parts by mass 30 parts by mass GBL Example 90 Ρ-5100 parts by mass 5 parts by mass 30 parts by mass 30 parts by mass GBL Example 91 Ρ-6100 parts by mass S parts by mass 30 parts by mass 30-membered parts GBL Example 92 p-moo parts by mass 5 parts by mass 30 parts by mass 30 parts by mass GBL Example 93 Ρ·14 100 parts by mass 5 parts by mass 30 parts by mass 3 〇 parts by mass GBL Example 94 Ρ-15100 parts by mass 5 parts by mass 3 〇 parts by mass 30 parts by mass GBL Example 95 Ρ-16100 parts by mass 5 parts by mass 30 parts by mass 3 〇 parts by mass GBL Example 96 Ρ-17100 mass 5 quality Dong 30 30 quality Dong 30 quality Dong GBL Example 97 Ρ-18100 parts 5 quality Dong 30 parts 3 〇 董 Dong GBL ΪΓ Example 98 Ρ-19100 quality Dong 5 parts 30 quality Dongfen 3 〇质董份 GBL Example 99 Ρ-20 100 parts by mass 5 parts by mass 30 parts by mass 3 〇 parts by mass GBL Comparative Example 15 Ρ-7100 parts by mass 5 parts Dong 30 parts by mass 30 parts by mass NMP Comparative Example 16 Ρ-8100 parts by mass of 5 parts by mass of 3 parts by mass of 30 parts by mass of NMP Comparative Example 17 Ρ-9100 quality Dongs S quality 30 parts by mass of 3 parts by mass of NMP Comparative Example 18 Ρ-10100 parts by mass 5 parts by mass 30 parts by mass 3 parts by mass NMP Comparative Example 19 Ρ-11100 parts by mass 5 parts by mass 3 〇 parts by mass 3 〇 parts by mass GBL Comparative Example 20 Ρ-12 100蜇Dong S mass parts 3〇 parts by mass 3〇 parts by mass GBL Comparative Example 21 Ρ-23100 parts by mass 5 parts by mass Γ 30 parts by mass Γ30 parts by mass GBL 136993.doc •116, 200940601 [Table 13] Alkali Minimum exposure amount of soluble resin (mJ/cm2) Resolution 〇um) Development initial film thickness margin 〇um) Fluorine atom in alkali-soluble resin (%) Example 89 P-4 100 parts by mass 450 15 1.0 0 Example 90 P -5100 parts by mass 450 14 1.5 0 Example 91 P-6100 parts by mass 400 18 1.0 0 Example 92 P-13100 parts by mass 375 15 1.5 0 Example 93 P-14100 parts by mass 350 14 1.0 0 Example 94 P-15100 Parts by mass 375 15 1.5 0 Example 95 P-16100 parts by mass 400 14 1.0 0 Example 96 P-17100 parts by mass 450 16 1.5 0 Example 97 P-18100 parts by mass 600 10 1.0 0 Example 98 P-20100 parts by mass 450 18 1.0 0 Example 99 P-22100 parts by mass 500 17 1.0 0 Comparative Example 15 P-7 100 parts by mass 800 1 8 0.5 0 Comparative Example 16 P-8 100 parts by mass 900 20 0.5 0 Comparative Example Π P-9100 parts by mass 650 15 0.5 0 Comparative Example 18 P-10 100 parts by mass &gt; 1000 - 0 Comparative Example 19 P-11 100 mass Parts 850 18 0.5 0 Comparative Example 20 P-12100 parts by mass 950 25 0.5 0 Comparative Example 21 P-23100 parts by mass 600 15 0.5 18

[產業上之可利用性] 本發明之正型感光性樹脂組合物可較好地用於半導體用 保護膜、層間絕緣膜、液晶配向膜等領域。 【圖式簡單說明】 圖1係雙(羧基)三環[5,2,1,02’6]癸烷之111以]^11光譜。 圖2係雙(羧基)三環[5,2,1,02’6]癸烷之13(:以]^11光譜。 圖3係雙(氣羰基)三環[5,2,1,02’6]癸烷之^-NMR光譜。 圖4係雙(氣羰基)三環[5,2,1,02,6]癸烷之13(:氺1^11光譜。 圖5係P-5之13C-NMR光譜。 圖6係P-13之13C-NMR光譜。 圖7係P-14之13C-NMR光譜。 圖8係P-15之13C-NMR光譜。 136993.doc -117· 200940601 圖9係P-16之13C-NMR光譜。 圖10係P-17之13C-NMR光譜。 圖11係P-19之13C-NMR光譜。[Industrial Applicability] The positive photosensitive resin composition of the present invention can be suitably used in the fields of a protective film for a semiconductor, an interlayer insulating film, a liquid crystal alignment film, and the like. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a spectrum of 111 bis(carboxy)tricyclo[5,2,1,02'6]nonane. Figure 2 is a 13 (:11) spectrum of bis(carboxy)tricyclo[5,2,1,02'6]nonane. Figure 3 is a bis(gas carbonyl) tricyclic [5,2,1,02 '6] ^-NMR spectrum of decane. Figure 4 is a 13 (:氺1^11 spectrum of bis(gas carbonyl)tricyclo[5,2,1,02,6]nonane. Fig. 5 is a P-5 13C-NMR spectrum. Fig. 6 is a 13C-NMR spectrum of P-13. Fig. 7 is a 13C-NMR spectrum of P-14. Fig. 8 is a 13C-NMR spectrum of P-15. 136993.doc -117· 200940601 13C-NMR spectrum of 9 series P-16 Fig. 10 is a 13C-NMR spectrum of P-17. Fig. 11 is a 13C-NMR spectrum of P-19.

136993.doc -118-136993.doc -118-

Claims (1)

200940601 十、申請專利範圍: 1. 一種樹脂 構: [化1] 其於分子内具有以下述通式(1)所主 表示之結 〇 〇 —HN-Xi-nh_c„Zi-C一 OH ⑴ {式中’ X!表示不含鹵原子之4價有機基,並 H1表示以 G 下述通式(2)所表示之2價有機基: [化2]200940601 X. Patent application scope: 1. A resin structure: [Chemical 1] It has a crucible represented by the following general formula (1) in the molecule - HN-Xi-nh_c„Zi-C-OH (1) { Wherein 'X! represents a tetravalent organic group which does not contain a halogen atom, and H1 represents a divalent organic group represented by the following formula (2): [Chemical 2] (式中’ L!、L2及L3分別獨立表示氫原子或甲基,並且 表示氫原子、甲基或經基)}。 _ 2- 一種樹脂,其於分子内具有以下述通式(3)所表示之結 構: 、Ό 136993.doc 200940601(wherein 'L!, L2 and L3 each independently represent a hydrogen atom or a methyl group, and represent a hydrogen atom, a methyl group or a trans group). _ 2- A resin having a structure represented by the following formula (3) in the molecule: Ό 136993.doc 200940601 [化3][Chemical 3] {式中,X,&amp;X2表示不含鹵原子之4價有機基,可分別相 同亦可不同,Z!表示以下述通式(2)所表示之2價有機 基: [化4] L·In the formula, X, &amp; X2 represents a tetravalent organic group which does not contain a halogen atom, and may be the same or different, and Z! represents a divalent organic group represented by the following general formula (2): [Chemical 4] L · (式中,Li、L2及L3分別獨立表示氫原子或甲基,並且L4 表示氫原子、曱基或羥基),Z2表示具有芳香環的不含鹵 136993.doc 200940601 原子之2價有機基,mi表示1〜200之整數,X3表示不含鹵 原子之2〜4價有機基,Z3表示不含鹵原子之4價有機基’ m2及ms分別獨立表示〇〜200之整數,m3表示〇〜2之整數, nu為0〜1之整數,並且叫、叫及叫個之各單元之排列順 序不受限制}。 3_如請求項1或2之樹脂,其具有以下述通式(4)所表示之結 構: [化5] ❹(wherein, Li, L2 and L3 each independently represent a hydrogen atom or a methyl group, and L4 represents a hydrogen atom, a fluorenyl group or a hydroxyl group), and Z2 represents a divalent organic group having a halogen ring of 136993.doc 200940601 atom having an aromatic ring, Mi represents an integer of 1 to 200, X3 represents a 2 to 4-valent organic group which does not contain a halogen atom, and Z3 represents a tetravalent organic group which does not contain a halogen atom. m2 and ms each independently represent an integer of 〇~200, and m3 represents 〇~ An integer of 2, nu is an integer of 0 to 1, and the order of the units called, called, and called is not limited}. 3_ A resin according to claim 1 or 2, which has a structure represented by the following formula (4): [Chemical 5] ❹ Ο II C- =中,分別獨立為選自由氣原子、碳數 烧基、及可經取代之苯環所組成之群中的―㈣ R2可連結,並且心及^分別獨 土 1 之有機基}。 ^原子或碳數為卜 4·如請求項1或2之樹脂,其具有以 構: 下4式(5)所表示之舍 [化6] 5.Ο II C- = is independently selected from the group consisting of a gas atom, a carbon number group, and a substituted benzene ring, and the (4) R2 can be linked, and the heart and the organic group of the soil 1 }. ^Atom or carbon number is the resin of claim 1 or 2, which has the structure: the formula represented by the following formula (5). (5) 〇 所表示之結 136993.doc 200940601 構: [化7] A(5) 结 The knot represented by 136993.doc 200940601 Structure: [Chem. 7] A (6〉 表示 [化8] 之結(6> indicates the knot of [Chemical 8] 7.如請求項1或2之樹脂,其具有以下述式(8)所表示之結 構: '° © [化9]7. The resin according to claim 1 or 2, which has a structure represented by the following formula (8): '° © [Chemical 9] 構: 136993.doc -4- 200940601 [化 l〇]Construction: 136993.doc -4- 200940601 [化 l〇] [化 11][化11] {式中, 10.如請求 構: L (10) R為碳數為1〜4之一價有機基}。 項1或2之樹脂,其具有以-P F述式(11)所表示之結 [化 12] 〇{In the formula, 10. As requested, L (10) R is a one-valent organic group having a carbon number of 1 to 4. The resin of item 1 or 2, which has a knot represented by the formula (11) of -P F [Chemical 12] 〇 [化 13][Chem. 13] (12)〇 136993.doc 200940601 12. 如請求項1或2之樹脂,其具有以下述式(13)所表示之結 構: [化 14](12) 136 136993.doc 200940601 12. The resin according to claim 1 or 2, which has a structure represented by the following formula (13): [Chem. 14] (13)。 13. ❹ 如請求項2之樹脂,其中上述通式(3)中之ζ2係選自由下 述結構式(14)所組成之群中的至少1種結構: [化 15](13). 13. The resin according to claim 2, wherein the oxime 2 in the above formula (3) is at least one selected from the group consisting of the following structural formula (14): [Chem. 15] Ο {式中’ Ls係選自以下有機基之1價基: [化 16]Ο {wherein' Ls is selected from the following monovalent groups of organic groups: [Chem. 16] (式中’ L6表示碳數為價烷基)}。 14. 如明求項2之樹脂,其中上述通式(3)中之含聚醢亞胺基 之單元部具有選自由下述式(15)及下述式(16)所組成之 群中的至少1種結構: 136993.doc 200940601 [化 17](wherein 'L6 represents a carbon number is a valence alkyl group)}. 14. The resin according to claim 2, wherein the polyiminoimine group-containing unit portion in the above formula (3) has a group selected from the group consisting of the following formula (15) and the following formula (16); At least 1 structure: 136993.doc 200940601 [Chem. 17] Ν o=c、\J=oΝ o=c, \J=o (16) 1 5·如請求項1或2之樹脂,其中樹脂之末端係選自由下述結 〇 構所組成之群中的至少1種末端基: [化 18](16) The resin according to claim 1 or 2, wherein the end of the resin is at least one terminal group selected from the group consisting of the following structures: [Chem. 18] ❹ 16. —種正型感光性樹脂組合物,其相對於丨〇〇質量份之(Α 含有如請求項1至15中任一項之樹脂之驗溶性樹脂,令 有1〜100質量份之(Β)感光性重氮萘鲲化合物。 17. 如請求項16之正型感光性樹脂組合物,其進一步含肩 100〜2000質量份之(c)有機溶劑。 18. 如請求項16或17之正型感光性樹脂組合物,其中感另 性重氮萘醌化合物係選自由以下述通式(17)所表示之秀 羥基化合物之1,2-萘醌二疊氮基-4_磺酸酯、及該聚羥 136993.doc 200940601 中的至 化合物之1,2-萘醌二疊氮基-5-磺酸酯所組成之群 少一種化合物: [化 19]❹ 16. A positive-type photosensitive resin composition having 1 to 100 parts by mass relative to the amount of the yttrium-based resin (including the solvent-soluble resin of the resin according to any one of claims 1 to 15) (Β) Photosensitive diazonaphthoquinone compound 17. The positive photosensitive resin composition of claim 16, which further comprises 100 to 2000 parts by mass of the (c) organic solvent. 18. If the request is 16 or 17 The positive photosensitive resin composition, wherein the sensory diazonaphthoquinone compound is selected from 1,2-naphthoquinonediazide-4-sulfonic acid which is a hydroxy compound represented by the following formula (17). The ester and the compound of the 1,2-naphthoquinonediazide-5-sulfonate of the compound 136993.doc 200940601 are one less compound: [Chem. 19] ❹ (17)。 19. 如請求項17之正型感光性樹脂組合物,其中(C)有機溶劑 為丫- 丁内醋Q 20. 如請求項16或17之正型感光性樹脂組合物,其進一步含 有0.01〜20質量份之(D)烷氧基矽烷化合物。 21. 如請求項20之正型感光性樹脂組合物,其中(D)烷氧基矽 院化合物係選自由以下述通式(18)〜(25)所表示之化合物 所組成之群中的至少一種化合物: [化 20] i? S ? (x3)s H〇-c—x「C-N_X24j_(0—祕吒 (18) (式中’心及又2表示2價有機基,χ3及χ4表示1價有機 基’並且s表示〇〜2之整數}; 136993.doc (19) 200940601 [化 21] (Χ5), Η ο (^-owsi-Xr-N-c^ yCoon HOOC^ 'C—N—X9-S1—(O—Xn)3-s 〇 H (X,〇)s {式中,X7及X9表示2價有機基,X8表示4價有機基, X5、X6、XlG及Xll表示1價有機基,並且S表示0~2之整 數}; [化 22]❹ (17). 19. The positive photosensitive resin composition of claim 17, wherein (C) the organic solvent is 丫-butyl vinegar Q 20. The positive photosensitive resin composition of claim 16 or 17, which further contains 0.01~ 20 parts by mass of the (D) alkoxydecane compound. 21. The positive photosensitive resin composition of claim 20, wherein the (D) alkoxy oxime compound is at least selected from the group consisting of compounds represented by the following general formulae (18) to (25). A compound: [Chemical 20] i? S ? (x3)s H〇-c-x "C-N_X24j_(0-secret (18) (wherein the heart and another 2 represent a divalent organic group, χ3 and χ4 Represents a monovalent organic group 'and s represents an integer of 〇~2}; 136993.doc (19) 200940601 [Chem. 21] (Χ5), Η ο (^-owsi-Xr-Nc^ yCoon HOOC^ 'C-N- X9-S1—(O—Xn)3-s 〇H (X,〇)s { wherein, X7 and X9 represent a divalent organic group, X8 represents a tetravalent organic group, and X5, X6, XlG and X11 represent a monovalent group. Organic base, and S represents an integer from 0 to 2}; [Chem. 22] 4_NH—X丨 3 —Si—(Ο—X] 5)3^ (X14)s (2 0) {式中,X13表示2價有機基,X12、X14及X15表示1價有機 基,s表示0〜2之整數,並且t表示0~5之整數}; [化 23]4_NH—X丨3—Si—(Ο—X] 5)3^ (X14)s (2 0) wherein X13 represents a divalent organic group, X12, X14 and X15 represent a monovalent organic group, and s represents 0. An integer of ~2, and t represents an integer from 0 to 5}; [Chem. 23] Ο Η Xl6—C一N—Xj7—Si—(OX]9)3-8 ( 2 1 ) (Xl8)S {式中’ Xl6表不-NH-R20或_0-R21(此處,R20與Κ·2 1為不含 COOH基之1價有機基),表示2價有機基,又丨8及又19表 示1價有機基,並且s表示0〜2之整數}; [化 24] HS—X22—Sj—(〇X24)3-S (X23)s (2 2) {式中,x22表示2價有機基,X23及X24表示1價有機基, 136993.doc -9- 200940601 並且s表示0〜2之整數}; [化 25] h2n-c-nh-x2S—Si-(OX27)3.s 〇 (X26)s (2 3) {式中,x25表示2價有機基,X26及X27表示1價有機基, 並且s表示0~2之整數}; [化 26]Ο Η Xl6—C—N—Xj7—Si—(OX)9)3-8 ( 2 1 ) (Xl8)S {wherein Xl6 is not -NH-R20 or _0-R21 (here, R20 and Κ·2 1 is a monovalent organic group having no COOH group, and represents a divalent organic group, and 丨8 and 19 represent a monovalent organic group, and s represents an integer of 0 to 2; [Chem. 24] HS— X22—Sj—(〇X24)3-S (X23)s (2 2) {wherein, x22 represents a divalent organic group, X23 and X24 represent a monovalent organic group, 136993.doc -9- 200940601 and s represents 0 An integer of ~2}; [Chemical 25] h2n-c-nh-x2S-Si-(OX27)3.s 〇(X26)s (2 3) {wherein, x25 represents a divalent organic group, and X26 and X27 represent a monovalent organic group, and s represents an integer of 0 to 2}; [Chem. 26] X29—X30—si—(OX32)3-S (X3l)s (2 4) {式中,x28表示氫原子或甲基,X29係選自下述式群之2 價基: [化 27] 〇 〇 —CH〗一 —S〇2— 〇 Π II 0-C-NH— —C-NH- 0 II -NH—C-NH--Ο一 —NH—C-0--ΟX29—X30—si—(OX32)3-S (X3l)s (2 4) wherein x28 represents a hydrogen atom or a methyl group, and X29 is selected from the group 2 of the following formula: [Chem. 27] 〇 〇—CH〗 1—S〇2—〇Π II 0-C-NH—C-NH— 0 II —NH—C—NH—-Ο—NH—C-0—-Ο Ο Ο II II •C 一 0*— ——C- ?'3 i? -c- -NH-C- cf3 ;X3Q表示2價有機基,X31&amp;X32表示1價有機基,S表示 0〜2之整數,並且U表示1〜3之整數};及 [化 28] (2 5) \ — 7^~Χ33—Χ34—Si—(〇X36)3-S (X35)s {式中,X33及X34表示2價有機基,X35及X36表示1價有機 136993.doc -10- 200940601 基,並且s表示0〜2之整數} » 22·如請求項16或17之正型感光性樹脂組合物,其進一步含 有5~20質量份之(Ε)藉由熱而引起交聯反應之化合物。 23. 如請求項22之正型感光性樹脂組合物,其中(Ε)藉由熱而 引起熱交聯反應之化合物係選自由具有環氧基、經甲 基、烷氧基甲基或氧雜環丁烷基之化合物、及雙晞两基 二醢亞胺化合物所組成之群中的至少一種者。 24. 如請求項16或17之正型感光性樹脂組合物,其進一步含 有1〜30質量份之選自由(F)丙烯酸酯化合物、甲基丙烯酸 酯化合物、含烯丙基之化合物、含甲氧基之化合物、及 苯酯化合物所組成之群中的至少1種者。 25. 如請求項16或17之正型感光性樹脂組合物,其進一步含 有1〜30質量份之(G)於分子内具有羧基之有機化合物。 26. —種硬化起伏圖案之形成方法,其包括:將如請求項μ 至25中任一項之正型感光性樹脂組合物塗布於基板上之 塗布步驟、對該層進行曝光之曝光步驟、利用顯影液將 曝光部溶出除去之顯影步驟、及對所得之起伏圖案進行 加熱之加熱步驟。 27. -種半導體裳置’其係具有藉由如請求項%之形成方法 所獲得之硬化起伏圖案而成者。 28. 種負型感光性樹脂組合物其包含:_質量份之(a) 3有如請求項1至15中任—項之樹脂之驗溶性樹脂、 0.5〜30質量份之(H)藉由照射活性光線而產生酸之化合 物及5〜50質量份之⑴藉由酸之作用可交聯之化合物。 136993.doc •11- 200940601 29.如印求項28之負型感光性樹脂組合物,其中⑴藉由酸之 作用可交聯之化合物係於分子内具有Μ基或貌氧基p 基之化合物。 30. 一種硬化起伏圖案之形成方法’其包括:將如請求項Μ 或29之負型感光性樹脂組合物塗布於基板上之塗布步 驟、對該層進行曝光之曝光步驟、曝光後進行加献之步 ❹ 31. 驟、利用顯影液將未曝光部溶出除去之顯影步驟、及對 所得之起伏圖案進行加熱之加熱步驟。 請求項30之形成方法 一種半導體裝置,其係具有藉由如 所得之硬化起伏圖案而成者。Ο Ο II II • C — 0* — — C— ? '3 i? —c- —NH—C— cf3 ; X3Q represents a divalent organic group, X31&amp;X32 represents a monovalent organic group, and S represents 0 to 2 An integer, and U represents an integer from 1 to 3}; and [28] (2 5) \ — 7^~Χ33—Χ34—Si—(〇X36)3-S (X35)s {where, X33 and X34 represents a divalent organic group, X35 and X36 represent a monovalent organic 136993.doc -10-200940601 group, and s represents an integer of 0 to 2} » 22. The positive photosensitive resin composition of claim 16 or 17, It further contains 5 to 20 parts by mass of a compound which causes a crosslinking reaction by heat. 23. The positive photosensitive resin composition of claim 22, wherein the compound which causes thermal crosslinking reaction by heat is selected from the group consisting of an epoxy group, a methyl group, an alkoxymethyl group or an oxygen group. At least one of a group consisting of a cyclobutane group and a biguanide diyl quinone imine compound. 24. The positive photosensitive resin composition of claim 16 or 17, further comprising 1 to 30 parts by mass of the compound selected from the group consisting of (F) acrylate compound, methacrylate compound, allyl group-containing compound, and At least one of a group consisting of a compound of an oxy group and a phenyl ester compound. 25. The positive photosensitive resin composition of claim 16 or 17, which further contains 1 to 30 parts by mass of (G) an organic compound having a carboxyl group in the molecule. A method of forming a hardening undulation pattern, comprising: a coating step of applying a positive photosensitive resin composition according to any one of claims 1 to 25 to a substrate; an exposure step of exposing the layer, A developing step of eluting and removing the exposed portion by a developing solution, and a heating step of heating the obtained undulating pattern. 27. A semiconductor skirt having a hardened relief pattern obtained by a method of forming a % of a request. 28. A negative photosensitive resin composition comprising: _ part by mass of (a) 3 of a resin having a resin as claimed in any one of claims 1 to 15, and 0.5 to 30 parts by mass of (H) by irradiation A compound which generates an acid by active light and 5 to 50 parts by mass of (1) a compound which can be crosslinked by an action of an acid. The negative photosensitive resin composition of claim 28, wherein (1) the compound crosslinkable by the action of an acid is a compound having a fluorenyl group or an oxo group p group in the molecule. . 30. A method of forming a hardened relief pattern comprising: a coating step of applying a negative photosensitive resin composition as claimed in claim 29 or 29 to a substrate, an exposure step of exposing the layer, and an exposure after exposure Step 31. A developing step of eluting and removing the unexposed portion by the developing solution, and a heating step of heating the obtained undulating pattern. Method of Forming Claim 30 A semiconductor device having a hardened relief pattern as obtained. 136993.doc 12136993.doc 12
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