200949936 九、發明說明： 【發明所屬之技術領域】 本發明係關於積體電路及積體電路製程以製造半導體裝置之 方法。特別是，本發明提供一種可應用於半導體裝置中的氧化介 5 電質之方法與裝置。糊來說，本個可顧树之低溫電漿氧 化’以於金氧半導體^08)裝置中形成閘極介電質。然應注意本發 明可應用之範圍並不僅祕此，舉例來說，本發明亦可應用於其 他石夕裝置’如雙極裝置或記憶體裝置，像是動態隨機存取記憶體: 〇 快閃έ己憶體、金屬-氧化物-氮化物-氧化物-石夕(MONOS)型咬其他非 1〇 揮發性記憶體裝置。 、非200949936 IX. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method of manufacturing an integrated circuit and an integrated circuit process for fabricating a semiconductor device. In particular, the present invention provides a method and apparatus for oxidizing dielectrics useful in semiconductor devices. For the paste, this can be used to form a gate dielectric in the low temperature plasma oxidation of the tree. However, it should be noted that the scope of application of the present invention is not only secret, for example, the present invention can also be applied to other Shixia devices such as a bipolar device or a memory device, such as a dynamic random access memory: 〇 flashing έ 忆 、, metal-oxide-nitride-oxide-MONOX type bite other non-volatile memory devices. ,non
【先前技裥J 15 ❹ 20 積體電叫或稱為ICs)，已從過去單一梦晶片上只有幾個彼此 相連之2置’演進到今日的數百萬個裝置。為了要提升複雜度與 電，的密度，每個世代之積體電路上的最小元件也越來越小。電 路密度的增加碰提升了繼·的赫度與效能，㈤時也讓成 本大大降低n面’由於積體電路的每—個製程中都有其限 制戶斤以要將裝置微小化是相當困難的。換言之，某一特定製程 只能使用树定的尺寸。因此，若碰騰尺寸更小的裳置時， 則必須改變製程或裝置上的布局。關於積體電路之低成本、高 效率生產之介電薄膜便是前述限制之一。 在現代的積體電路裡，介電薄膜常使用於各種重要的元件 例來說，金氧半導體|晶體中的薄閘極介電質以及記憶體 裝置中的穿隨介電質對於裝置的效能與可靠性均相當重要。厚介 電質則常用於裝置隔離中’像是淺溝渠隔離或層㈤隔離。傳統上， 厚介電_多_化學餘赚(CVD)方式形成,薄介電質則利 5 25 200949936 ，矽之熱氧化來形成。_，當裝置越來越小，_前述 ===置對於翊謝。吨錄·於說明 有鑑於此’有必要提出一種改良之半導體襄置製程。 5 【發明内容】 本發明主要侧科導雜置及鄕[Previous technology J 15 ❹ 20 Integrated electrical or ICs] has evolved from a few connected devices on the single dream chip to millions of devices today. In order to increase the complexity and density of electricity, the smallest components on the integrated circuit of each generation are getting smaller and smaller. The increase in circuit density increases the efficiency and efficiency of the relay, and (5) also greatly reduces the cost of the n-face. Because each of the integrated circuits has its own limit, it is quite difficult to miniaturize the device. of. In other words, only a certain size can be used for a particular process. Therefore, if you are struggling with a smaller size, you must change the layout of the process or device. A low-cost, high-efficiency production of a dielectric film for an integrated circuit is one of the aforementioned limitations. In modern integrated circuits, dielectric films are often used in a variety of important components, such as thin gate dielectrics in MOS semiconductors and dielectrics in memory devices. Both reliability and reliability are important. Thick dielectrics are often used in device isolation, such as shallow trench isolation or layer (five) isolation. Traditionally, a thick dielectric _ multi_chemical surplus (CVD) method is formed, and a thin dielectric is 5 25 200949936, which is formed by thermal oxidation of ruthenium. _, when the device is getting smaller and smaller, _ aforementioned === set for thank you. In view of this, it is necessary to propose an improved semiconductor device manufacturing process. 5 [Summary of the Invention] The main side of the present invention is miscellaneous and 鄕
10 15 20 導繼巾臟化靖之雜ΐί 低溫驟輸，私在錄轉聽置中形 ί ，本侧可朗之細並不僅限 於=舉絲說，本_亦可應其财裝置如雙極裝 存取記憶體，記紐、金屬_氧化 物-氮化物-氧化物_梦型或其他非揮發性記憶體裝置。 =據本發曰月之-實施例，形齡電質之方法包括提供 矽:導體層之紐。含石夕材料的表面部分乃進行電漿氧化處：， 以在，800 C或更低的溫度下將其轉變為氧化之介電材料，其 電漿氧化步驟包括有含氧成分與含氟碳成分。於一實施例中 漿製程係不制含狀賴源紐。於_餘财基材 j程溫度約耽至55G°CT似轉。於-倾辦，含氟碳氣 體之流速係用來控制氧化介電質之厚度。 、 於本發财法的—個細种，絲触也包括了混成氣體 ^¾)。而於某實施例中’混成氣體包括氫氣與氮氣的混合，其中 氫，約為2%至6%。某實施例中，電浆製程並不使用含石夕之“ 源氣體’此乃有別於一般需要於電浆源氣體巾使用含妙前驅物^ 電漿化學氣相沉積氧化製程。依各實施例之需要，含辨導體層 6 25 200949936 晶Γ非晶石夕、含有摻雜物之石夕或是其他切 =導體材料。於另-實施辦，切料體層可包财層或石夕錯 於本發明之方法的一實施例中，含氧氣體係選自於由〇2、〇3、 =f Ν〇2所組成議組’而含氣碳氣體係選自於由⑶、娜、 CH3F所組成續組。於特定實施例中，與氧化介電質相 150 ^ IT ^ ^^，lt ^ 10 15 ❹ 20 的紐乃於約二。於特定實施例中，電漿製程中 ί、約250 C之酿度下予以維持。於—實施例中，電 於一電聚真空室内之製程壓力介於約伽至1(),_毫托耳嘴製 2 500電一種製程條件包括、約⑽毫托耳之製程壓力、約 又量、約2聊之製程溫度、約_立方公分/ 1方八八速、^300立朴分/分鐘之混減懸速以及約25 鐘之含碳及含魏體流速。於另—特定製程中，電聚 1(X^ 1(W〇毫托耳之製程壓力、介於約5⑻至 3:,=^量、介於約150至靴之製程溫度、介於約 八八/八_ 0立方公分/分鐘之氧氣流速、介於約30至3,000立方 :刀^鐘之混成紐流速以及介於約2至1〇〇立方公分/分鐘之含 奴及含氟氣體流速。 質之辦，本㈣無—餅料錄置帽成介電 材施以法包括提供具有表面區域之半導體級，並將基 及於雷1糾電賴跳括含氧紐與含H氣體，以 機為-層氧化^料使赫表_的最上層部分 ㈣Φ勹杠人、電材科於特疋實施例中，半導體基材於表面 半導體層。於一實施例中’電衆製程包括介於約 ，亳托耳之製程壓力、介於約500至5,000瓦特之射頻 7 25 200949936 ϋ分=之製程溫度、介於約300至20,000立 @3G至聊立方公分/分鐘之混成 她咖及祕約2幻⑻立方公分/分鐘之含_氣體流速。 於特定實施例中’於轉體裝置中形齡電質之方法包括提 ”有表面區域之石夕紐。該方法並將矽基材施 二 10 15 ❿ 20 、”、 方A刀/刀鐘之混成氣體流速以及約25立方公分/分鐘之 亥方法包括於魏製程的環境中，使用化學反應將 矽基材的最上層部分轉變為一層氧化介電材料。 根據本㈣之又-實闕，其係提供—獅齡電質之方 法’其包括提供具有含辨導體層之紐，且該基材具有一表面 巧。該方法尚包括將紐施以電漿製程，其巾電製製程包括含 氧氣體與魏碳鍾，以及於電職料環針 將含料導體層的最上層部分轉變為一層氧化介 施例中’ t聚製程係不使用-含石夕之電漿源氣體。於特定實施例 中’該储乃於約150至55(TC之製程溫度下予以維持。於一實施 例中，氧化介電質之厚度可利用含氟碳氣體之流速來調整。 於再一實施例中，本發明提供一種形成半導體裝置之方法， 其包括提供具有第-導電型態之錄#，断紐包括一表面區 域。該方法亦包括將該基材施以電漿製程，其包括含氧氣體、混 成氣體以及含氟碳氣體。該方法尚包括於電漿製程的環境中，使 用化學反應將含石夕基材的最上層部分轉變為一層氧化介電材料。 該方法亦包括藉纽積麵案化導電層_成覆胁氧化介電材 料上之閘極結構。該方法更包括分別於該閘極結構之兩侧形成源 極區域與没極區域，且源極區域與及極區域之形成乃透過將基材 8 25 200949936 之第一部分與第二部分轉變為第二導電型態。10 15 20 Guided by the towel, the filthy jing zhi ί low temperature sudden loss, private recording and listening to the middle shape ί, the side can be fine and not limited to = lift silk, this _ can also be its financial devices such as bipolar Install memory, remember, metal_oxide-nitride-oxide_dream or other non-volatile memory devices. According to the present invention, the method of forming an age-based electrical power includes providing a 矽: a conductor layer. The surface portion of the stone-containing material is subjected to plasma oxidation: it is converted into an oxidized dielectric material at a temperature of 800 C or lower, and the plasma oxidation step includes an oxygen-containing component and a fluorine-containing carbon. ingredient. In one embodiment, the pulp process system does not contain a ruthenium. On the _ surplus financial substrate j process temperature is about 55 to 55G °CT like turn. The flow rate of the fluorocarbon gas is used to control the thickness of the oxidized dielectric. In the fine-grained method of this method, the silk touch also includes the mixed gas ^3⁄4). In one embodiment, the <mixture gas comprises a mixture of hydrogen and nitrogen, wherein hydrogen is from about 2% to about 6%. In one embodiment, the plasma process does not use the "source gas" containing the stone eve. This is different from the general need for the plasma source gas towel to use the wonderful precursor precursor ^ plasma chemical vapor deposition oxidation process. For example, it is necessary to include a discriminating conductor layer 6 25 200949936 Γ Γ Γ 、 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , In an embodiment of the method of the present invention, the oxygen-containing system is selected from the group consisting of 〇2, 〇3, =f Ν〇2 and the gas-bearing carbon gas system is selected from (3), Na, CH3F The composition is continued. In a specific embodiment, the oxide phase is 150 ^ IT ^ ^^, and lt ^ 10 15 ❹ 20 is about two. In a specific embodiment, the plasma process is ί, about 250. The process of C is maintained. In the embodiment, the process pressure in an electro-convergence vacuum chamber is between about gamma and 1 (), and the process conditions of 2,500 ohms are 2,500, and a process condition includes, about (10) millimeters. The process pressure of the ear, about the amount, about 2 process temperature, about _cubic centimeters / one side eight eight speed, ^300 vertical points / minute of the reduction Speed and about 25 hours of carbon and Wei body flow rate. In another specific process, electropolymerization 1 (X ^ 1 (W 〇 millitorn process pressure, between about 5 (8) to 3:, = ^ amount, The process temperature is between about 150 and the boot, the oxygen flow rate is about 880/8 _cm3/min, and the flow rate is about 30 to 3,000 cubic: the mixed flow rate of the knife and the clock is about 2 to 1 〇. 〇 cubic centimeters per minute of slave and fluorine gas flow rate. The quality of the office, the (4) non-cake material recording cap into the dielectric material application method includes providing the semiconductor level with the surface area, and the base and the mine 1 The electric power is divided into an oxygen-containing neon and a gas containing H, and the uppermost layer of the H-table is made by the machine-layer oxidation material, and the semiconductor substrate is on the surface semiconductor layer. In one embodiment, the 'electricity process includes a process pressure of about 5,000 Torr, a radio frequency of about 500 to 5,000 watts, a temperature of 7 25 200949936, and a process temperature of about 300 to 20,000 立 @3G. To the chatter cubic centimeters / minute mix her coffee and secret 2 illusion (8) cubic centimeters / minute containing _ gas flow rate. In a specific example 'in The method of forming an age-old electrical quantity in a body device includes extracting a stone surface having a surface area. The method applies a mixed gas flow rate of about 10 15 ❿ 20 , a square A knife/knife clock, and about 25 cubic meters. The method of centimeters/minute is included in the environment of the Wei process, using a chemical reaction to convert the uppermost portion of the tantalum substrate into a layer of oxidized dielectric material. According to this (4), it is provided by the lion age. The method of 'providing a button having a layer containing a discriminating conductor, and the substrate has a surface. The method further comprises a plasma process, wherein the towel electroforming process comprises an oxygen-containing gas and a Wei carbon clock, and In the electric service ring needle, the uppermost part of the material-containing conductor layer is converted into a layer of oxidizing medium, and the plasma process gas is not used. In a particular embodiment, the storage is maintained at a process temperature of about 150 to 55 (at a process temperature of TC. In one embodiment, the thickness of the oxidized dielectric can be adjusted using the flow rate of the fluorocarbon gas. In one embodiment, the present invention provides a method of forming a semiconductor device, comprising: providing a surface having a first conductivity type, the break including a surface region. The method also includes applying the substrate to a plasma process, including Oxygen gas, mixed gas and fluorine-containing carbon gas. The method is also included in the environment of the plasma process, using a chemical reaction to convert the uppermost portion of the substrate containing the shixi substrate into a layer of oxidized dielectric material. The gated structure of the conductive layer _ is formed on the oxidized dielectric material. The method further comprises forming a source region and a non-polar region on both sides of the gate structure, respectively, and the source region and the polar region The formation is achieved by converting the first portion and the second portion of the substrate 8 25 200949936 into a second conductivity type.
_ 目對於傳統技術有許多優點，舉例來說H 供一種半導體材料(如石夕)之低溫氧化一。舉例來說，在 咖織括减靴歧低的溫度 低恤電漿製程來氧化石夕紐。於一實施例中本發明提供 種以傳統技術為基礎且方便使用之製程，於某些實施例 : Ο 10 15 ❹ 20 二制厚度以及在低溫電漿雜巾_理想厚度的方法 ’ 提供-_單、低溫、低細算且相雜傳統 Κ之氧化製程’傳統設備無須大幅度修改即可實施本發明之方法。 ίϋί%之特徵、目的及優料將可透過下顺崎附圖式、 貫施方式及申請專利範圍獲得充分瞭解。 【實施方式】 於半導體裝置與其製造方法，特別是關於可應用 、體裝置之氧化介電質之方法與裝置。本發明可庫用於石夕之 麟繼+蝴齡^= 路日^、π本發日柯應用之細並*僅限於此，舉例來說，本 用於其他石夕裝置，如雙極裝置或記憶體裝置，像是動 ίίίίϊϊ贿、娜_、金屬·氧化減她氧化物-矽 i或其他非揮發性記憶體裝置。 株。的積體電路裡’薄介電質常用於構成各種重要的元 罢由說’金氧半導體電晶體中的間極介電質以及記憶體裝 &,古此入電質之品質對於裝置的效能與可靠性均相當重要。 的常透過將雜氧化之方式來形成。隨著積體電路 、Α小’降低製程的熱預算也越來越重要。然而，若為 9 25 200949936 了降低熱預算而於低溫環境下進行熱氧化製程常常無法得到理想 的厚度。另一種介電質的形成方法’如化學氣相沉積(CVD)或電聚 輔助化學氣相沉積(PECVD)，儘管其熱預算較低，但卻常常產生 品質不佳的介電質。在典型的化學氣相沉積或電漿輔助化學氣相 沉積製程中，含％前驅物與含氧前驅物彼此反應而形成沉積於石夕 基材表面的矽氧化物。於此種製程中，矽氧化物薄膜及介於沉積 之石夕氧化物與矽基材間之介面的品質常常無法達到電晶體或記憶 體裝置之要求。據此，有需要提出一種可滿足裝置要求之氧化物 厚度的低溫氧化製程。 依實施例之不同，本發明包括多個技術特徵，如： 1. 半導體材料(如石夕)之低溫氧化方法； 2. 於低溫(如約250°C)電漿製程中，藉由將石夕基材氧化以形成 碎氧化物的方法； 3. 於低溫電漿製程中控制厚度並達成理想厚度之方法； 4. 一種簡單、低溫、低熱預算且相容於傳統製程技術，使傳 統設備無須大幅度修改即可實施之方法。 如前所述，該些技術特徵可體現於一或多個實施例中，且該 些技術特徵僅為例示，其不應作為對申請專利範圍之限縮。技^ 領域中具有通常知識者應可知悉其具有各種不同之變化、改變及 替代方案。 第1圖為根據本發明一實施例電漿製程之設備簡化示意圖， 其可用以形成氧化介電質。本圖僅供用於說明本發明，且其非用 以限縮本發明之範圍。技術領域中具有通常知識者應可知悉其具 有各種不同之變化、改變及替代方案。如圖所示，電紫製程裝置 100包括一製程室110、連接至用以維持製程壓力之真空幫浦12〇 200949936 以及用以接收驟源顏之進氣口 14()。製 112，而晶圓116則置於製程室110_的承座114上。 有一加熱機細未示)以將晶圓ιΐ6維持於—理^ 5 ❹ 10 15 ❿ 20 =於石英管m内產生電浆。緩衝盤142乃装設 旁，用以產生均勻之電漿源氣體流。 、 儘管前述之電漿製程裝置伽包含有特定元件， 各種不同之、改變及钱方案。舉嫌說，某些元件可ς 一 步擴充或齡，祕他元件柯裝册某些元叙間。 之不同’元件間之排列可進行互換或取代。而在不同實施^中， /電漿製程裝置100可產生反雜離子或帶電高·子或用以進 订電^侧或電麵助峨。-般総，電雜站括下列條件： 製程氣體喊、紐錢、製健力、棚能量與溫度等等。 根據本發明之特&實施例，其提供_種於電浆製程裝置1⑻中進 行低溫石夕氧化以形成矽氧化物的方法，以下進一步說明該方法之 細節内容。 第2圖為根據本發明一實施例形成氧化介電質方法之簡化流 程圖。本圖僅供用於說明本發明，且其非用以限縮本發明之範圍。 技術領域中具有通常知識者應可知悉其具有各種不同之變化、改 變及替代方案。如圖所示，本發明一實施例中形成乳化介電質之 方法可概略說明如下： 1·(步驟210)提供具有含5夕半導體層之基材； 2·(步驟220)將該基材施以電漿製程’該電漿製程包括含氧氣 體與含氟碳氣體；以及 3.(步驟230)將含;e夕半導體層之最上層部分轉變為一層氧化介 11 25 200949936 電材料 ,蝴巾_猛方魏切基材之 f法’如圖卿，該方法結合了於電㈣程中導人含氧氣體與含 容 _氣氧化德材。灯進_步酬該綠之細節内 ，第3A至3C圖係根據本發明一實施例之方法形成氧化介電質 之簡化剖_。此麵僅供驗_本發明， ❹ 10 發明之細。猶概巾财财知識者射知 =之變化，及顿辟。町糊第3A総 來說明本㈣之-實_。如圖卿，於低溫形魏化介電質之 =始_始’步驟210中’乃提供一紐。如第3a圖所示， 土材300包括一具有表面區域3〇2之含石夕半導體層3仍。於一實施 15 例中’含辨導體層301可以是單晶石夕、多晶石夕、非晶石夕、氮化 矽(SiN)、發鍺(SiGe)及氮氧化石夕(Si〇N)。於實施例中， 可包括矽-鍺層。此外，含石夕層可以是已摻雜或未摻雜者。舉例^ 說，含石夕層可以是矽、多晶矽或非晶矽基材之最上層。於另一實 施例中，含石夕層可以是絕緣層上覆石夕(SOI)結構或多晶石夕相連層中 之裝置層。 20 於步驟220中，該方法包括將紐施以電漿製程。於一實施 例中’電漿製程包括含氧氣體與含氟碳氣體。於特定實施例中& ”製程尚可包括混成氣體’其係為統與氮氣的混合且其中 氫氣約佔2至6%。於一實施例中，含氧氣體包括一或多種之&、 〇3、NO、H20及N〇2。於某些實施例中，含氟碳氣體包 2 種之 cf4、chf3、CH2F2 及 CH3F。 匕枯 4夕 於某些實施例中，基材於電漿製程中乃維持於約150。匸至 5〇 C之製程溫度。在特定實施例中，氧化石夕基材之步驟乃藉由將 12 25 200949936 維持於約2耽之溫度下達成。於再一實施例中，雜乃 二，8Γ/ΐ更低之溫度。電賴程可於範圍較廣的製程麗力^進 :歹'J說，在某些實施例巾，電漿真空室之麗力乃維持於100 毫^0。0毫托耳之間。在特定實施例中製程壓力乃維持在約⑽ 〇 10 15There are many advantages to conventional techniques. For example, H provides a low temperature oxidation of a semiconductor material (such as Shi Xi). For example, in the café, the low-tie plasma process is used to reduce the temperature of the enamel. In one embodiment, the present invention provides a process that is based on conventional techniques and that is convenient to use, in some embodiments: Ο 10 15 ❹ 20 two-layer thickness and method for low-temperature plasma shims _ ideal thickness provided -_ The method of the present invention can be carried out without a large modification of the conventional equipment, which is simple, low-temperature, low-calculation and complicated. The characteristics, objectives and advantages of ίϋί% will be fully understood through the Shun Saki drawing, the method of application and the scope of patent application. [Embodiment] The present invention relates to a semiconductor device and a method of fabricating the same, and, in particular, to a method and an apparatus for applying an oxide dielectric of a device. The invention can be used for the application of Shi Xizhi Lin + 龄 ^ ^ = 路 日 ^, π 本 本 柯 应用 应用 * * * * 应用 应用 应用 , , , , , , , , , , , , , , , , , , , , , , Or a memory device, such as a ίίίίϊϊ bribe, a _, a metal oxidized minus her oxide-矽i or other non-volatile memory device. Strain. In the integrated circuit, 'thin dielectrics are often used to form various important elements. 'The inter-electrode dielectric in the MOS transistor and the memory device & the quality of the quality of the device for the performance of the device. Both reliability and reliability are important. It is often formed by means of hetero-oxidation. With the integrated circuit, the small thermal budget of the process is becoming more and more important. However, if the thermal budget is reduced for 9 25 200949936 and the thermal oxidation process is carried out in a low temperature environment, the desired thickness is often not obtained. Another method of forming dielectrics such as chemical vapor deposition (CVD) or electropolymerization assisted chemical vapor deposition (PECVD), although having a lower thermal budget, often produces poor quality dielectrics. In a typical chemical vapor deposition or plasma-assisted chemical vapor deposition process, the %-containing precursor and the oxygen-containing precursor react with each other to form a cerium oxide deposited on the surface of the substrate. In such a process, the quality of the tantalum oxide film and the interfacial interface between the deposited tantalum oxide and the tantalum substrate often fails to meet the requirements of the transistor or memory device. Accordingly, there is a need to provide a low temperature oxidation process that satisfies the thickness of the oxide required by the device. Depending on the embodiment, the present invention includes a plurality of technical features, such as: 1. a low temperature oxidation method of a semiconductor material (such as Shi Xi); 2. a low temperature (eg, about 250 ° C) plasma process by using a stone a method of oxidizing a substrate to form a broken oxide; 3. a method of controlling the thickness and achieving a desired thickness in a low-temperature plasma process; 4. a simple, low-temperature, low-heat budget and compatible with conventional process technology, so that conventional equipment is not required A method that can be implemented with substantial modifications. As described above, the technical features may be embodied in one or more embodiments, and the technical features are merely illustrative and should not be construed as limiting the scope of the patent application. Those with ordinary knowledge in the field of technology should be aware of various changes, changes and alternatives. 1 is a simplified schematic diagram of an apparatus for a plasma process in accordance with an embodiment of the present invention, which may be used to form an oxidized dielectric. This drawing is only intended to illustrate the invention and is not intended to limit the scope of the invention. Those of ordinary skill in the art will recognize that there are various variations, modifications, and alternatives. As shown, the electro-violet process apparatus 100 includes a process chamber 110 coupled to a vacuum pump 12 〇 200949936 for maintaining process pressure and an air inlet 14 () for receiving a source of sag. The wafer 112 is placed on the holder 114 of the process chamber 110_. There is a heater (not shown) to maintain the wafer ΐ6 — 10 ❹ 10 15 ❿ 20 = plasma is generated in the quartz tube m. The buffer tray 142 is mounted adjacent to produce a uniform plasma source gas stream. Although the aforementioned plasma processing apparatus gamma contains specific components, various changes, and money solutions. It is suspected that some components can be expanded or ageed in a step-by-step manner. The difference between the elements can be interchanged or replaced. In different implementations, the /plasma processing apparatus 100 can generate anti-hetero ions or charged high-power or can be used to customize the electrical side or the electrical surface. - The general conditions include the following conditions: process gas shouting, new money, system strength, shed energy and temperature, etc. According to the & embodiment of the present invention, a method of performing low temperature oxidization in a plasma processing apparatus 1 (8) to form a cerium oxide is provided, and the details of the method are further explained below. Figure 2 is a simplified flow diagram of a method of forming an oxidized dielectric in accordance with one embodiment of the present invention. This drawing is only intended to illustrate the invention and is not intended to limit the scope of the invention. Those of ordinary skill in the art will recognize that there are various variations, modifications, and alternatives. As shown in the figure, a method for forming an emulsified dielectric according to an embodiment of the present invention can be roughly illustrated as follows: 1. (Step 210) providing a substrate having a semiconductor layer containing 5 eve; (2) (Step 220) the substrate Applying a plasma process 'the plasma process includes an oxygen-containing gas and a fluorine-containing carbon gas; and 3. (Step 230) converting the uppermost portion of the semiconductor layer into a layer of oxide dielectric 11 25 200949936 Towel _ Meng Fang Wei cut substrate f method 'Figure Qing, the method combined with the electric (four) process to lead the oxygen-containing gas and containing _ gas oxidation of German material. In the details of the green light, the 3A to 3C drawings form a simplified cross-section of the oxide dielectric according to the method of an embodiment of the present invention. This surface is only for inspection _ the present invention, ❹ 10 invention details. I still know how to make money from the knowledge of the person who knows the money. Machi paste 3A 総 to illustrate this (four) - the real _. As shown in Fig. qing, in the low temperature forming Weihua dielectric quality, the first step is provided in step 210. As shown in Fig. 3a, the earth material 300 includes a stone-containing semiconductor layer 3 having a surface region 3〇2. In one embodiment, the 'conducting conductor layer 301' may be a single crystal slab, a polycrystalline stone, an amorphous stone, a tantalum nitride (SiN), a germanium (SiGe), and a nitrogen oxynitride (Si〇N). ). In an embodiment, a ruthenium-iridium layer may be included. In addition, the layer containing the layer may be doped or undoped. For example, the layer containing can be the uppermost layer of tantalum, polycrystalline germanium or amorphous germanium substrate. In another embodiment, the tarpaulin layer may be a device layer in an insulating layer overlying stone (SOI) structure or a polycrystalline litter layer. 20 In step 220, the method includes applying the New Zealand to a plasma process. In one embodiment, the plasma process includes an oxygen-containing gas and a fluorine-containing carbon gas. In a particular embodiment, the & "process may still include a mixture of gases" which is a mixture of nitrogen and nitrogen and wherein the hydrogen is present in an amount of from about 2 to about 6%. In one embodiment, the oxygen-containing gas comprises one or more of & 〇3, NO, H20, and N〇2. In some embodiments, the fluorocarbon gas comprises two types of cf4, chf3, CH2F2, and CH3F. In some embodiments, the substrate is in a plasma. The process is maintained at a process temperature of about 150 匸 to 5 〇 C. In a particular embodiment, the step of oxidizing the substrate is achieved by maintaining 12 25 200949936 at a temperature of about 2 Torr. In the embodiment, the temperature is lower than that of the second, 8 Γ / ΐ. The electric ray can be used in a wide range of processes: 歹 'J said, in some embodiments, the plasma vacuum chamber Li Li It is maintained between 100 milliohms and 0 millitorr. In a particular embodiment, the process pressure is maintained at approximately (10) 〇 10 15
20 於某些實施例中，電衆製程之條件包括介於約1〇 毫托耳之製程壓力、介於約撕至_瓦特之射雜量、介於7 150至550 C之製程溫度、介於約3〇〇至2〇 〇〇〇立方公分/分鐘之 介於約30至3，_立方公分/分鐘之混成氣體流速以及 介；約至100立方公分/分鐘之含碳及含氟氣體流速。於特定 施例中’電漿製程之條件為約⑽毫托耳之製程壓力、約細 瓦特之能量、約25(TC之製程溫度、約聊立方公分/分 流速、約300立方公分/分鐘之混成氣體流速以及約25立方公分/ ί鐘，含碳及含魏驗速。於前述触巾的某些實施例使用的 是氧氣或CF4氣體。無庸置疑地’其可具有各種不同之變化、改 變及替代方案。在某些實施辦，製餘度可时 4501。 於第3B圖中’電聚製程將含辨導體層之最上層部分撕 變為-層氧化介電材料(於步驟23〇中）。減—實施例，本發明提 供之《製程财·姆之電麵氣體。本發明提供—^於 漿環境中氧化含石夕半導體層之最上層部分3〇6的方法。於第3c圖 中氧化物層307係形成且覆蓋於未氧化之含石夕層3〇5上。此與傳 統之化學氣相沉積(CVD)並不同，因為後者在電漿環境中同時使用 了含石夕與含氧之成分來形成沉積在基材表面之石夕氧化物。 前述方法提供一種根據本發明之實施例進行低溫氧化石夕基材 之方法。其中，該方法結合了於電漿製程中導入含氧氣體與含氟 13 25 200949936 ^材。拇@雜也 加步驟、蔣哈 V' ^ 丹他變化’如增 :未脫離本;;二:¾以 氧化 ❹ 10 15 ❹ ==氣體組成、氣體流速、溫度、壓力與氧二二 等為說明本發明所提供之方法，發明人進行了實驗研 氏溫電《製程中石夕基材之氧化物成長情形。於此些研究中 ^氧錄成錄形飾咖，紐源、氣體流 連等等之關係，以下僅提供部分結果。 飞 第4圖為根據本發明一實施例之製程氣體、製程時間相 氧化物厚度之關賴絲意目。本目健驗酬本發明，且盆 非用以限縮本發明之範圍。技術領域中具有通常知識者應可知& 其具有各種獨之變化、改變及替代方案。如騎示，其顯示^ 三種不同製雜件下形成神紐上的氧化物厚度與時間的關 係。應注意的是，前述三種製程中的製程壓力(1，5〇〇亳托耳）、射 頻能量(2,5GG JL特）、氧氣錢(3，_立；^公分/分鐘)以及溫度 (250C)均維持固定，且每一製程所使用的是不同的製程氣體組 成。三個製程乃於下列出，其包括氧氣流速、混成氣體(標示為耶2) 流速、CF4(四氟甲烧)氣體流速以及溫度，其中氣體流速之單位為 立方公分/分鐘。 ” 1. CF4/N2H2/〇2： /3000 〇2 / 300 N2H2 /15 CF4 / 2. N2H2/〇2： /3000 02 / 300 N2H2 / 0 CF4 / 3. 〇2： /3000 〇2 / 〇 N2H2 / 0 CF4 / 14 25 200949936 由上了♦ i私3僅包含氧氣，且其產生之氧化物層最薄， 於10分鐘之氧化後大概只有10埃。製程2之氧氣流速為3，_立 方公分/分鐘且耶2流速為300立方公分/分鐘，其所產生之 =物财-些’於10分鐘之氧化後大約有2()埃。相較之下製 程1之氧氣流速為3，_立方公分/分鐘、觸流速為3〇〇立方公 分/分鐘且CF4流速為15立方公分/分鐘，其所產生的氧化物厚度 相對最大’於10分鐘之氧化後大概有95埃。因此，根據本發明 之特定實_，於低溫電絲化巾，f漿驗組成可肋控制氧 化物之成長。根據發明人之實驗數據’含氟碳氣體之流速對於氧 化介電質之成長速度影響相對較大。特別是，增加CF4流 升氧化介電質之成長。 第5圖為根據本發明一實施例利用Cf4氣體時，製程時間相 對於氧化物厚度之關係簡化示意圖。本圖僅供用於說明本發明， 且其非用以限縮本發明之範圍。技術領域中具有通常知識者應可 知悉其具有各種不同之變化、改變及替代方案。由帛5圖中可看 出在以25立方公分/分鐘之巩流速時氧化物厚度與氧化時間的關 係。而其他條件包括製程壓力(1，5〇〇毫托耳)、射頻能量A·瓦 特)、氧氣流速(3,000立方公分/分鐘)、混成氣體流速(3〇〇立方公分 /分鐘)以及溫度(250。〇。由圖中可以看出在25立方公分/分鐘之 %流速下，於六分鐘時氧化物厚度之成長可達到約9〇至⑽埃， 且於製程時間加長時，厚度並沒有明顯的增加。 、 斤第6圖為根據本發明一實施例利用CF4氣體時，流速相對於 氧化物厚度之關係簡化示意圖。本圖僅供用於說明本發明，且其 非用以限縮本發明之範圍。技術領域中具有通常知識者應可知悉 其具有各種不同之變化、改變及替代方案。如圖所示，在cf4 ^ 速增加至約25立方公分/分鐘之過程中’氧化物的厚度也隨流 15 200949936 加而增加。而當流速高於3〇立方公分/分鐘時，氧化物的成長 隨流速增加而減少。 5 10 1520 In some embodiments, the conditions of the electrical process include a process pressure of about 1 Torr, a turbulence of about _ watts, a process temperature of 7 150 to 550 C, a flow rate of the mixed gas of about 30 to 3, _cm ^ 3 /min at about 3 〇〇 to 2 〇〇〇〇 cubic cents / minute; and a flow rate of carbon and fluorine containing gas of about 100 cubic centimeters per minute . In a particular embodiment, the 'plasma process conditions are about (10) millitorr of process pressure, about watts of energy, about 25 (TC process temperature, about cubic centimeters per minute flow rate, about 300 cubic centimeters per minute). The flow rate of the mixed gas and about 25 cubic centimeters per gram of carbon, including the carbon and the speed of the test. Some embodiments of the aforementioned touch towel use oxygen or CF4 gas. Undoubtedly, it can have various changes and changes. And in some implementations, the margin can be as long as 4501. In Figure 3B, the 'electropolymerization process tears the uppermost portion containing the discriminating conductor layer into a layer-oxidized dielectric material (in step 23) The invention provides a method for oxidizing the uppermost portion 3〇6 of the stellite semiconductor layer in a slurry environment. The present invention provides a method for oxidizing the uppermost portion 3〇6 of the stellite semiconductor layer in a slurry environment. The intermediate oxide layer 307 is formed and covers the unoxidized inclusion layer 3〇5. This is different from the conventional chemical vapor deposition (CVD) because the latter uses both the shi and the plasma environment. Oxygen-containing component to form a stone oxide deposited on the surface of the substrate The foregoing method provides a method for performing a low temperature oxidized oxide substrate according to an embodiment of the present invention, wherein the method combines introduction of an oxygen-containing gas into a plasma process and a fluorine-containing 13 25 200949936 ^ material. Adding steps, Jiang Ha V' ^ Danta change 'If increased: not divorced from this;; 2: 3⁄4 with yttrium oxide 10 15 ❹ == gas composition, gas flow rate, temperature, pressure and oxygen two to explain the invention In the method provided, the inventors conducted an experiment on the growth of the oxide of the Shixi substrate in the process of the research and development. In these studies, the relationship between the oxygen and the recording of the coffee, the source of the new gas, the gas entanglement, etc., Only partial results are provided.Fly Figure 4 is a view of the process gas and the process time phase oxide thickness according to an embodiment of the present invention. The present invention is in accordance with the invention, and the basin is not used to limit the invention. Scope. Those of ordinary skill in the art will recognize that there are various variations, changes, and alternatives, such as riding, which show the relationship between the thickness of the oxide on the gods and the time under three different parts. Note It is intended that the process pressure (1,5 Torr), RF energy (2,5 GG JL), oxygen money (3, _ stand; ^ cm/min) and temperature (250C) in the above three processes Both are fixed and each process uses a different process gas composition. The three processes are listed below, including oxygen flow rate, mixed gas (labeled as yeah 2), flow rate, CF4 (tetrafluoromethane) gas flow rate And temperature, where the gas flow rate is in cubic centimeters per minute." 1. CF4/N2H2/〇2: /3000 〇2 / 300 N2H2 /15 CF4 / 2. N2H2/〇2: /3000 02 / 300 N2H2 / 0 CF4 / 3. 〇2: /3000 〇2 / 〇N2H2 / 0 CF4 / 14 25 200949936 From the ♦ i private 3 contains only oxygen, and the oxide layer produced is the thinnest, after 10 minutes of oxidation, probably only 10 angstroms. Process 2 has an oxygen flow rate of 3, _ cubic centimeters per minute and a flow rate of 300 cubic centimeters per minute, which produces a mass of -2 angstroms after 10 minutes of oxidation. In comparison, the oxygen flow rate of Process 1 is 3, _cm ^ 3 /min, the flow velocity is 3 〇〇 cm ^ 3 /min, and the CF 4 flow rate is 15 cc / min, which produces a relatively large oxide thickness of '10. Approximately 95 angstroms after the oxidation of the minute. Therefore, according to the specific embodiment of the present invention, in the low-temperature wire-forming towel, the composition of the paste can control the growth of the oxide. According to the experimental data of the inventors, the flow rate of the fluorine-containing carbon gas has a relatively large influence on the growth rate of the oxidized dielectric. In particular, the growth of the CF4 flow-up oxide dielectric is increased. Fig. 5 is a simplified diagram showing the relationship between the process time and the oxide thickness when using Cf4 gas according to an embodiment of the present invention. This drawing is for illustrative purposes only and is not intended to limit the scope of the invention. Those of ordinary skill in the art will recognize that there are various variations, modifications, and alternatives. The relationship between oxide thickness and oxidation time at a beam flow rate of 25 cubic centimeters per minute can be seen from Figure 5. Other conditions include process pressure (1,5 Torr), RF energy (A watt), oxygen flow rate (3,000 cubic centimeters per minute), mixed gas flow rate (3 〇〇 cubic centimeters per minute), and temperature (250). 〇. It can be seen from the figure that at a flow rate of 25 cubic centimeters per minute, the oxide thickness can grow up to about 9 〇 to (10) angstroms in six minutes, and the thickness is not significant when the process time is lengthened. Figure 6 is a simplified schematic diagram showing the relationship between the flow rate and the oxide thickness when using CF4 gas according to an embodiment of the present invention. This figure is for illustrative purposes only, and is not intended to limit the scope of the present invention. Those of ordinary skill in the art should be aware that they have a variety of variations, changes, and alternatives. As shown, the thickness of the oxide is also increased during the cf4 ^ speed increase to approximately 25 cubic centimeters per minute. Flow 15 200949936 increases and increases. When the flow rate is higher than 3〇3 cm/min, the growth of oxide decreases with increasing flow rate. 5 10 15
20 第7圖為穿透式電销微鏡(TEM)之相#，其_$利用本發 明-實施狀低溫電魏倾娜权祕麟。本目僅供用於 說明本發明，且其_職縮本發明之關。技術領域中^有通 常知識者射知悉其具有各料狀變化、改變及替代方案。如 第7圖TEM，面株片所示，其乃形成於石夕級上且厚度為％ 埃左右之均魏化物’而所使軸製程條件為製程壓力似⑻毫托 耳)、射雛量(2,500瓦特)、氧氣流速(3 〇〇〇立方公分/分溫产 (250°〇、混成氣黯速3〇〇立方公分/分鐘以及 $ 第8A至8C圖係根據本發明一實施例之方法形 之^圖。此侧僅供酬本發明，且其非職限= =圍。^镇巾具麵私識者射知雜具林種不同之 ，化、及替代方案。如第8A圖所示，該方法包括提供一具有 表面區域(圖未示)之石·^8〇1， 有 f導電型;、。然應了解的是，該方法也可用於p 示:極氧化物層803乃形成於梦紐观上。於 如圖 ^氧化物層8G3可利用與第3A至咒圖中所描述之方法相^之 舉例來說’ _可_包括了含氧氣體、混成氣體 與含氟碳鍾之钱縣來_。f 面區域的最上層部分轉變為一層氣化介電材料8〇3。將表 瓣電層之方 s案化方法形成的經摻雜:多=::= 區域807、8G9乃被機為第二導電_像是m 16 25 200949936 與沒極。如圖所示’源極807和沒極809乃分別位於閘極結構之 兩侧。於特定之實施例中’源極與汲極可利用離子佈植製程來形 成。 - 本發明相對於傳統技術有許多優點，舉例來說，本發明提供 5 一種以傳統技術為基礎且方便使用之製程，於某些實施例中，^ 發明之方法提供一種半導體材料(如石夕)之低溫氧化。舉例來說，在 特定實施例中，形成矽氧化物的方法包括如在25〇〇C或更低的溫度 下使用低溫電聚製程來氧化梦基材。於一實施例中，本發明提供 ❹ 一種控制厚度以於低溫電漿製程中達到理想厚度的方法。此外了 '° 該方法提供一種簡單、低溫、低熱預算且相容於傳統製程技術之 氧化製程’傳統設備無須大幅度修改即可實施本發明之方法。 雖然本發明係已參照實施例來加以描述’然本發明創作並未 丈限於其詳細描述内容。替換方式及修改樣式係已於先前描述中 所建議’且其他替換方式及修改樣式將為熟習此項技藝之人士所 15 思及。特別是，所有具有實質上相同於本發明之構件結合而達成 與本發明實質上相同結果者，皆不脫離本發明之精神範疇。因此， ❹ =有此等替換方式及修改樣式係意欲落在本發明於隨附申請專利 範圍及其均等物所界定的範缚之中。 20 【圖式簡單說明】 第1圖為根據本發明一實施例電漿製程之設備簡化示意圖， 其可用以形成氧化介電質。 第2圖為根據本發明一實施例形成氧化介電質方法之簡化流 程圖。 25 第3A至3C圖係根據本發明一實施例之方法形成氧化介電質 之簡化示意圖。 17 200949936 第4 圖為根據本發明一實施例之製程氣體、製程時間相對於 物厚度之關係簡化示意圖。 對於^/圖為根據本發明一實施例糊CF4氣體時，製程時間相 物厚度之關係簡化示意圖。 Ψο 氧侧gf4游流速相對於 之簡面r圖係根據本發明-實施例之方法形成半導體裝置 【主要元件符號說明】 130 射頻產生器 120 真空幫浦 114 承座 110 製程室 116 晶圓 132 射頻纜線 112 石英管 140 進氣口 142 緩衝盤 134 螺旋線圈 100 電漿製程裴置 300 301 含石夕半導體層 302 表面區域 305 未氧化之含發層 18 200949936 306 307 801 803 805 807 809 最上層部分 氧化物層 石夕基材 閘極氧化物層 閘極結構 源極 没極20 Figure 7 shows the phase of the penetrating electric micromirror (TEM), which uses the invention - the implementation of the low temperature electric Wei Linna Mi Mi Lin. This item is for illustrative purposes only, and is intended to be a limitation of the invention. In the technical field, there is a general knowledge of the person who knows that it has various material changes, changes and alternatives. As shown in Fig. 7 TEM, as shown in the surface of the plant, it is formed on the Shi's level and has a thickness of about 8% of the average Wei compound', and the axial process conditions are the process pressure (8) millitorr), and the amount of shots (2,500 watts), oxygen flow rate (3 〇〇〇 cubic centimeter/minute temperature production (250° 〇, mixed gas idling speed 3 〇〇 cubic centimeters/minute, and $8A to 8C diagrams according to an embodiment of the present invention) This figure is only for the invention of this invention, and its non-employment = = circumference. ^ The town towel has a different knowledge of the different types of forestry, and alternatives. As shown in Figure 8A The method includes providing a stone having a surface region (not shown), having an n-conductivity type; and it should be understood that the method can also be applied to p: the epi-oxide layer 803 is formed. On the view of Yu Meng, as shown in Fig. 2, the oxide layer 8G3 can be used as an example of the method described in the 3A to the mantra. The _ can include oxygen-containing gas, mixed gas and fluorine-containing carbon clock. The uppermost part of the area of the _.f area is transformed into a layer of vaporized dielectric material 8〇3. The doping formed by the method of the surface of the electric layer of the lobes: more =:: = Regions 807, 8G9 are the second conductive _images such as m 16 25 200949936 and immersed. As shown in the figure, 'source 807 and immersion 809 are respectively located on both sides of the gate structure. In a specific embodiment The 'source and drain' can be formed by an ion implantation process. - The present invention has many advantages over the conventional technology. For example, the present invention provides a process based on conventional technology and convenient to use, in some In an embodiment, the method of the invention provides for low temperature oxidation of a semiconductor material, such as Shi Xi. For example, in certain embodiments, the method of forming the tantalum oxide includes, for example, at a temperature of 25 ° C or lower. The low temperature electropolymerization process is used to oxidize the dream substrate. In one embodiment, the present invention provides a method of controlling the thickness to achieve a desired thickness in a low temperature plasma process. Further, the method provides a simple, low temperature, low heat The method of the present invention can be carried out without undue modification to the conventional process of the oxidation process which is compatible with the conventional process technology. Although the invention has been described with reference to the embodiments, It is not limited to the detailed description. The alternatives and modifications are suggested in the previous description' and other alternatives and modifications will be considered by those skilled in the art. In particular, all have substantially the same The combination of the components of the present invention to achieve substantially the same results as the present invention does not depart from the spirit of the invention. Therefore, the alternatives and modifications are intended to fall within the scope of the appended claims. And the equivalents defined by the equals. 20 [Simple Description of the Drawings] Fig. 1 is a simplified schematic view of a plasma processing apparatus according to an embodiment of the present invention, which can be used to form an oxidized dielectric. A simplified flow diagram of a method of forming an oxidized dielectric in accordance with an embodiment of the present invention. 25 Figures 3A through 3C are simplified schematic views of the formation of an oxide dielectric in accordance with a method in accordance with an embodiment of the present invention. 17 200949936 FIG. 4 is a simplified schematic diagram showing the relationship between process gas and process time versus material thickness in accordance with an embodiment of the present invention. For the ^/ figure, a simplified schematic diagram of the relationship between the thickness of the process time and the phase of the process is carried out according to an embodiment of the present invention. Ψο Oxygen side gf4 swimming velocity relative to the simple surface r diagram according to the method of the present invention - forming a semiconductor device [main component symbol description] 130 RF generator 120 vacuum pump 114 socket 110 process chamber 116 wafer 132 RF Cable 112 Quartz tube 140 Air inlet 142 Buffer disk 134 Spiral coil 100 Plasma processing device 300 301 Containing Shixia semiconductor layer 302 Surface area 305 Unoxidized hair layer 18 200949936 306 307 801 803 805 807 809 Top layer Oxide layer Shixi substrate gate oxide layer gate structure source poleless