200931561 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種基板處理裝置及基板處理方法，係在被處 理基板上形成含溶劑之處理液之塗布膜，尤關於用於將塗布膜在 烘烤步驟前適度乾燥之乾燥裝置。 ' 【先前技術】 於液晶顯示器(LCD)之製造中，若於微影步驟中在被處理基板 (玻璃基板)上塗布抗錄劑後’立即進行使抗触劑中之殘存溶劑蒸發 ❹之加熱處理亦即預烘’則於加熱處理單元内會受到來自於與^板 接觸之頂升銷、支持銷或真空溝等的熱影響而造成溶劑蒸^不均 勻，有抗蝕劑膜厚出現不一致的問題。所以，在預烘前，係藉由 減壓乾燥處理，於減壓環境中使基板上之抗蚀劑中的殘存^劑 發至達一定階段，以在抗蝕劑塗布膜之表面形成硬化層(一種變質 層）。若依此使抗蝕劑塗布膜之内部或主體部保持在液狀，僅 層邛硬化之減壓乾燥法，則預烘時，不僅能抑制主體抗蝕劑之 動而減少乾燥斑發生，而且使顯影處理時抗蝕劑 ^ 厚減小量減少，得到抗钮劑解像度提高的效果。】化合解隹或膜 ❹ 典型的減壓乾燥裝置，如例如專利文獻1所記載，包含·馆 或淺底容器型之下部腔室，及位在該下部腔室之頂 巧可乳㈣s或嵌合構成之蓋狀上部腔f。下部腔室之中 =有台座，在該台座上’將完成抗_塗布處 者，ίτ將基 突出, 面， 【專利文獻1】曰本特開2000—181〇79 200931561 •【發明内容】 (發明欲解決之問題） 像上述減壓乾燥裝置，為了使減壓度提高到 強度增大，大型化且成本料高。而且，將 腔室上升降下_ ’因此，伴隨基板 © 來因或對於作業員之安全問題 又，輸捕☆人也愈益大型化，但是將 並輸送變得困難，將剛塗布抗_後之基板以如同i團扇 狀態觀，於將基板之㈣人賴«置之腔! 或裝载/卸猶，容祕生位置偏離或碰撞、破損等錯誤至 再者，由於在腔室中，基板係在從台座頂面突出之 ίίίϊ七里二此，於減壓乾燥階段，有時在基板上之抗蝕ί 膜會有銷轉印的痕跡’此點亦成為問題。 w 此外，腔室變得愈大，則愈難保持減壓環境均句性，欲 板上全部區域使抗|虫劑塗布膜以無斑地均勻乾燥變得困難。土 ❹ U明’有鑑於如上述f知技術之問題而生， 壓，裝置、基板處縣置及基板處理方法，係對於㈡ j處理絲上之處使用賴乾燥之手法，而將塗 主體ΐ分保Ϊ在適度液狀至潮辭乾雜，在賴表面形 硬化層實現防止乾驗發生或有效率地提升塗 買。 (解決問題之方式） 為了達成上述目的’本發明之常壓乾燥裝置包含：平流輸送 二將塗布有ΐ溶劑之處理液的被處理基板沿著既定輸送線以平 j送；及乾聽理部，於前述平流輸送巾，在常溫或更高溫度 •之吊壓環境下，使祕基板上之處理液之塗布膜從基板之背面侧 200931561 • 一面冷卻至較常溫為低溫一面乾燥。 本發明之基板處理I置，包含：前述常壓乾燥 ί前而配置在前述常壓乾燥裝置:上游側ί ί ，在前述基板上塗布前述處理液;'BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and a substrate processing method, which are coating films for forming a solvent-containing treatment liquid on a substrate to be processed, and more particularly to use for coating a coating film. A drying device that is moderately dry before the baking step. [Prior Art] In the manufacture of a liquid crystal display (LCD), if the anti-recording agent is applied to the substrate to be processed (glass substrate) in the lithography step, the heating of the residual solvent in the anti-contact agent is immediately performed. The treatment, that is, the pre-baking, is caused by the thermal influence of the top lift pin, the support pin or the vacuum groove from the contact with the plate in the heat treatment unit, causing the solvent to be vaporized unevenly, and the resist film thickness is inconsistent. The problem. Therefore, before the prebaking, the residual agent in the resist on the substrate is brought to a certain stage in a reduced pressure environment by a vacuum drying treatment to form a hardened layer on the surface of the resist coating film. (a metamorphic layer). When the inside of the resist coating film or the main body portion is kept in a liquid state, and only the layer is hardened by the vacuum drying method, the pre-baking can suppress the movement of the main resist and reduce the occurrence of dry spots. The amount of reduction in the thickness of the resist during the development treatment is reduced, and the effect of improving the resolution of the resist is obtained. A decompression drying device, such as described in Patent Document 1, includes a lower chamber of a museum or a shallow bottom container type, The lid-shaped upper chamber f is configured. In the lower chamber, there is a pedestal on which the 'anti-coating unit will be completed, ίτ will protrude from the base, and the surface will be made. [Patent Document 1] 曰本特开 2000-181〇79 200931561 • [Summary of the Invention] ( Problem to be Solved by the Invention As described above, in order to increase the degree of pressure reduction to increase the strength, the pressure reduction drying apparatus is large in size and high in cost. Moreover, the chamber is lifted and lowered _ 'Therefore, with the substrate © or the safety problem for the operator, the ☆ person is becoming more and more large, but it is difficult to transport and transport the substrate. In the same way as the fan state of the i group, the substrate of the (four) people is placed in the cavity or loaded/unloaded, and the position of the secreted student is deviated or collided, broken, etc., because the substrate is in the chamber. The LY ί ϊ 从 从 从 从 从 , , , , , , , , ί ί ί ί ί ί ί ί 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压w In addition, the larger the chamber becomes, the more difficult it is to maintain the decompression environment, and it is difficult to uniformly dry the anti-insect coating film in a uniform area without the spots. In the case of the above-mentioned problem, the pressure, the device, the substrate, and the substrate processing method are used for the method of (2) processing on the wire, and the coating body is used. The sub-guarantee is in the form of a moderate liquid to the tide, and it is prevented in the surface-hardened layer to prevent dry inspection or to effectively improve the coating. (Means for Solving the Problem) In order to achieve the above object, the atmospheric pressure drying apparatus according to the present invention includes: an advection conveying unit 2: a substrate to be processed which is coated with a treatment liquid of a cerium solvent is sent along a predetermined conveying line in a flat line; and a dry listening section In the above-mentioned advection conveying towel, the coating film of the treatment liquid on the secret substrate is cooled from the back side of the substrate 200931561 • to the lower temperature than the normal temperature at a normal temperature or a higher temperature. The substrate processing of the present invention comprises: placing the atmospheric pressure drying device in front of the atmospheric pressure drying device: upstream of the normal pressure drying device, and coating the processing liquid on the substrate;
&，14輸送㈣配置在前述f壓㈣裝置之下游侧 鄰於將Μ基板以平流輸送之狀態進行加熱。 J 被處i基包ΐΐ下步驟:塗布步驟，在 。巧輸=r_ “常之塗布膜從基板之細—面冷卻 在當ί’ϋ、☆塗布單元巾’形成在基板上之處理液之塗布膜， 相摊壓下開始自然乾燥’並於塗布膜内以固定速度進行液 平ΐί 散之狀態’搬人常壓乾燥裝置。常壓乾燥裝置中， 期間:藉由乾燥處理部將基板上 (貝面)暴路在吊/凰或更尚溫之常壓環境下，另一方 协洽太之底面經由基板被冷卻至較常溫更低的溫度。藉此， ^之η 、二表層部之溶劑氣相擴散速度與主體部之液相擴散速 ❹ί it，較後者為大之關係產生差異(或差異擴大），主體部 ίίΐΐ濕半乾狀態以適度維持之狀態，僅有表層部適度乾燥 it r即使利用常壓乾燥，亦能得到與習知使用減壓乾 ，法巧形為同質之塗布膜改質處理結果。而且，*於係平流方 式，因此，亦能達成裝置構成之簡易化、小型化、低成本化等。 勺人依ϊ本發明之—較佳祕，於常壓乾燥裝置中，平流輸送部 上？ 上洋台座，使基板藉由氣體壓力浮上浮輸送移動 二^人”第1上浮台座上使基板沿著輸送線移動。又，乾燥處理 由第1上浮台座將基板冷卻之冷卻機構。於此情形，就 二 冓之一較佳知樣而言，可包含：冷媒通路，設於第1上浮 •台座内；及冷媒供給部，對於該冷媒通路供給經調溫之冷媒。又， 200931561 •=巧上浮台座提高冷卻機能之效果及精度，較佳為，將基板 =尚度奴為使紐與第1上浮台座得以熱結 =設ii;用冷卻機構將第1上浮台座之頂面冷卻上 將夕ίίι就其他較佳態樣而言，平流輸送部包含：滾動輸送路， 、奋袞子以固定間隔布設而成；及滾動輸送驅動部，為了於兮 路ΐϊ基板沿著輸送線移動，而將滾子軸H ^ ^3通過滾子而將基板冷卻之冷卻機構。於該情形， ®對於該冷’設於㈣；及冷媒供給部， 二：用之氣體’例如可使用空氣、氮氣等，亦可 口熱使溫暖。依此方式，藉由使乾燥用氣體接觸基 之4布職面，能使塗布膜中之溶劑之氣相擴散增大。 〇 將其^t·依、:、較佳態樣’乾燥處理部包含：第1乾燥處理區間， 之二ϊϋ布職基板之背面侧以較常溫為低之第1溫度冷卻 燥處第2乾燥處理區間’沿著輸送線設定於較第1乾 溫更低下游側，將基板上之塗布膜從基板背面側以較常 由該槿点，0Γ第1溫度獨立設定之第2溫度冷卻之狀態乾燥。藉 乾i處理i可以對於塗布膜施加不同之冷卻或麟作㈣2階段 含：發明之基板處理裝置之較佳態樣而言，塗布單元包 動部，在基板齡氣雜力細；第2上浮輸送移 理液嗜嘴?㈣5参台座上，使基板於輸送線方向移動；長形處 用ΐΐί讀;3第ii浮台座之上方;及，處理液供給部’利 亦可嘴朝者以平流移動中之基板喷吐處理液。於該情形， 浮么座液噴嘴位於較輸送線更為下游側之區間，使第2上 ' 為第1上浮台座，藉此，可以使形成處理液之塗布膜 200931561 後，於第1上浮 儘可能縮短。 (發明之效果） 口 座上開始常壓乾燥為止之常溫·常壓乾燥時間 法，二上常壓乾燥裝置、基板處理裝置及基板處理方 之膜，曰X二3及作用、’能對於塗布在被處理基板上之處理液 狀至朝乾料法，祕躲麵之主體部分為適度液 ，在液膜表面形成適度硬化層，能防止乾燥ΐ 發生或有效率地實現塗布膜之膜質提升。 ❹【實施方式】 (實施發明之最佳形態） .以下，參照附圖說明本發明之較佳實施形態。 減示能ί用本發明之乾縣置、基減理裝置及基 Ϊΐο 例的塗布娜處理系統。該塗布顯影處理系The <14 delivery (4) arrangement is performed on the downstream side of the f-pressure (four) device adjacent to the state in which the crucible substrate is transported in an advection. J is placed under the i-package step: coating step, at . Ingeniously = r_ "The coating film of the film is cooled from the fine surface of the substrate in the coating film of the treatment liquid formed on the substrate by the coating unit towel, and begins to dry naturally under the pressure of the coating. The liquid level is 固定 ' ' ' ' ' ' ' ' 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬 搬Under normal pressure, the other side is cooled to a lower temperature than the normal temperature via the substrate. Thereby, the solvent vapor phase diffusion velocity of the η and the two surface layers and the liquid phase diffusion speed of the main body portion are improved. Compared with the latter, the difference is large (or the difference is expanded), and the main part is ίί wet and semi-dry state in a state of moderate maintenance. Only the surface layer is moderately dry. Even if it is dried by atmospheric pressure, it can be obtained with conventional use. Drying, the method is the same as the coating process modification result of the homogenous film. Moreover, * is in the advection method, so that the device structure can be simplified, miniaturized, reduced in cost, etc. - better secret, dry at atmospheric pressure In the apparatus, the advection conveying portion is placed on the upper pedestal, and the substrate is moved by the gas pressure to float and transport. The first floating pedestal moves the substrate along the conveying line. Further, the drying process is a cooling mechanism for cooling the substrate by the first floating pedestal. In this case, it is preferable that the refrigerant passage is provided in the first floating pedestal, and the refrigerant supply unit supplies the tempered refrigerant to the refrigerant passage. Also, 200931561 •=The floating pedestal improves the cooling effect and accuracy. It is better to heat the substrate=Shangdu slave and the first floating pedestal==ii; use the cooling mechanism to lift the first floating pedestal In the other preferred aspects, the advection conveying portion includes: a rolling conveying path, and the scorpion is arranged at a fixed interval; and a rolling conveying driving portion for the 兮 ΐϊ substrate along the A cooling mechanism in which the conveying line moves and the roller shaft H^^3 is passed through the rollers to cool the substrate. In this case, the "cooling" may be provided in (4); and the refrigerant supply unit, and the gas used in the second embodiment may be, for example, air, nitrogen or the like, or may be warmed by mouth heat. In this manner, by bringing the drying gas into contact with the surface of the substrate, the gas phase diffusion of the solvent in the coating film can be increased. 〇 ^ 依 : : : ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The treatment section is set along the transport line at a lower downstream side than the first dry temperature, and the coating film on the substrate is cooled from the back surface side of the substrate by the second temperature which is normally set independently from the defect point and 0 Γ first temperature. dry. By using the dry i treatment i, different cooling or lining can be applied to the coating film. (4) 2 stages: In the preferred aspect of the substrate processing apparatus of the invention, the coating unit entraining portion is fine in the substrate age; the second floating (4) 5 pedestal on the pedestal, so that the substrate moves in the direction of the conveying line; the elongated part is read with ΐΐί; 3 ii floating pedestal above; and the processing liquid supply part 'li can also be used to advect The substrate is in the process of spraying the liquid. In this case, the floating seat nozzle is located on the downstream side of the transport line, and the second upper portion is the first floating pedestal, whereby the coating film 200931561 for forming the treatment liquid can be floated on the first May be shortened. (Effects of the Invention) The normal temperature and normal pressure drying time method for starting the atmospheric pressure drying on the mouth, the film of the two-normal atmospheric drying device, the substrate processing device, and the substrate processing, the 曰X 2 and the action, The liquid on the substrate to be treated is in the form of a dry material, and the main part of the secret surface is a moderate liquid, and a moderately hardened layer is formed on the surface of the liquid film to prevent drying enthalpy from occurring or to efficiently improve the film quality of the coating film. BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. The reduction energy can be used in the dry county setting and base reduction apparatus of the present invention and the coating treatment system of the base. Coating development treatment system
淨室内，例如以玻璃基板作為被處理基板，進行LCD 等ί連；^影潔、抗_塗布、預烘、顯影及後供 ^施處於鄰接該系統設置之外部曝光裝置12 ❹腕ί塗處理系、统1〇，在中心部配置橫長之處理站 其邊方向(Χ方向)兩端部配置g盒站(C/S)14及界面 E盒站(C/S)14 ’為系統1〇之g盒搬出入琿，具備：g盒台座 重属並排至多4個而載置可將基板G ^多排 夕數基板之E盒C;輸送機構22,對於該台座 以1片A=打1板G之出人。輸送機構22，具可將基板G 片為早位固持之輸送臂22a，可於χ、γ、Ζ、θ之4軸動作， 將基板G與鄰接之處理站(p/s)16側進行遞送。 處理站(P/S)16，係將各處理部依照處理流或步驟配水平 '系統長邊方向(X方向)延伸且平行之逆向的—對線人、b。 200931561 更詳而言之’於從匣盒站(c/s)14側往界面站(I/F)18側 部處理線A，從上游側起依序沿著第！平流輸送路％，將搬 兀(IN PASS)24、清潔處理部％、第！熱處理 3〇及第2熱處理部32配置成一列。 【布處理。p 構22更屬)24從^盒站(C/S)14之輪送機 構22接取未處理之基板G ,槪定之作業時間投入第！平流 路34。清潔處理部26，沿著第j平流輸送路％從上游側起依 =準分子uv照射單元_¥)36及擦磨清料私SCR)38。第ι 處理部28，從上義起辦設置_單元(ad)4()及冷卻單元 布處理部3〇 ’從上游側起依序設置抗蝕劑塗布單元 (C=)44及吊^乾燥單元(VD)46。第2熱處理部32，從上游側 依序設麵料it(PRE-BAKE)48及冷卻f_；Ft(a>L)5()。位於第 游卿的第1平流輸送路34的終點，設有傳遞 s Γ在第1平流輸送路34±，平流輸送而來的基板g， 從该終點之傳遞單元(PASS)52遞送到界面站(I/F)i8。 另一方面，於從界面站(I/F)18侧往匣盒站(c/S)14侧之下游部 處理、^Λ，沿著第2平流輸送路64從上游侧起依序成-列配置： 顯影單元(DEV)54、後烘單元(POST - ΒΑΚΕ)56、冷卻單元 〇 (C0L^8、檢查單元(ΑΡ)6〇及搬出單元(〇UT pAss)62。在此， BAKE)56及冷卻單7^(既)58,構成第3熱處理 ° °出早^(OUT PASS)62’從第2平流輸送路64將處理完 畢之基板G逐片接取，並交給g盒站(c/s)14之輸送機構22。In the clean room, for example, a glass substrate is used as a substrate to be processed, and an LCD or the like is connected; the image is cleaned, the anti-coating, the pre-bake, the development, and the subsequent application are disposed adjacent to the external exposure device 12 of the system. System and system 1〇, at the center of the processing station with horizontal length, the g-box station (C/S) 14 and the interface E-box station (C/S) 14 ' are arranged at both ends of the side (Χ direction). 〇 g 盒 盒 搬 珲 珲 珲 珲 珲 珲 盒 g 盒 g g g 盒 g g 盒 盒 盒 g g 盒 盒 盒 盒 g 盒 g g 盒 盒 g 盒 盒 g g 盒 盒 盒 g 盒 g g 盒 盒 盒 盒 盒 盒 盒 盒 盒1 board G is a person. The transport mechanism 22 has a transport arm 22a that can hold the substrate G piece in the early position, and can operate on four axes of χ, γ, Ζ, and θ, and delivers the substrate G to the adjacent processing station (p/s) 16 side. . The processing station (P/S) 16 is a pair of line people and b that each processing unit is extended in accordance with the processing flow or the step 'the system longitudinal direction (X direction) and is reversed in parallel. 200931561 In more detail, from the side of the box station (c/s) 14 to the side of the interface station (I/F) 18, the processing line A, from the upstream side, sequentially follows the first! % of the advection conveying path will be moved (IN PASS) 24, cleaning processing part%, the first! The heat treatment 3〇 and the second heat treatment unit 32 are arranged in a line. [cloth processing. The structure of the p structure 22 is more than 24). The unloading substrate G is taken from the wheeling mechanism 22 of the box station (C/S) 14 and the working time of the setting is input! Advection Road 34. The cleaning processing unit 26 follows the j-th leveling conveyance path % from the upstream side to the sub-molecular uv irradiation unit _¥) 36 and the wiping and cleaning material SCR 38. The first processing unit 28 sets the unit (ad) 4 () and the cooling unit cloth processing unit 3 from the top, and sequentially sets the resist coating unit (C=) 44 and the drying from the upstream side. Unit (VD) 46. The second heat treatment unit 32 sequentially sets the fabric (PRE-BAKE) 48 and the cooling f_; Ft (a > L) 5 () from the upstream side. At the end of the first advection transport path 34 of the voyage, there is a substrate g that transmits s Γ to the first advection transport path 34±, which is transported advancingly, and is delivered from the end point transfer unit (PASS) 52 to the interface station. (I/F) i8. On the other hand, it is processed from the interface station (I/F) 18 side to the downstream portion of the cassette station (c/S) 14 side, and is sequentially formed from the upstream side along the second advection conveying path 64 - Column arrangement: developing unit (DEV) 54, post-drying unit (POST - ΒΑΚΕ) 56, cooling unit 〇 (C0L^8, inspection unit (ΑΡ) 6 〇 and carry-out unit (〇 UT pAss) 62. Here, BAKE) 56 and the cooling sheet 7^(n) 58 constitute a third heat treatment ° ° OUT PASS 62'. The processed substrate G is taken one by one from the second advancing conveying path 64 and delivered to the g box station. Transport mechanism 22 of (c/s) 14.
處理線A、B之間，設有輔助輸送空間68，可將基板Q 位水平載置之穿梭機構7G，利用未圖示之驅動機構， 在處理線方向(X方向)雙向移動。 w =H(I/F)18 ’③含將基板G在上述第1及第2平流輸送路 η =接之曝光裝置12㈤進行送、拿之輸送裝置72，於該 之周圍，配置著旋轉台座(R/S)74及周邊裝置76。旋 轉口座（）74 ’係將基板G於水平面内旋轉之台座，用在與曝光 200931561 裝置12間遞送時使長方形之基板g做方向變換。周邊裝置％， 係將例如印字曝光機(TITLER)或周邊曝光裝置(EE)等連&於第2 平流輸送路64。 圖2顯示該塗布顯影處理系統中，對於}片基板〇之 ，的處理轉。首先，在g盒站(C/s)14巾，輸職構22從台座 中之一的MC取出1片基板G’並將該取出的基板G搬 。到^理站〇>/叫6於處理線A側之搬入單元⑽ρΑ%)24(步驟 S1)。基板G從搬人單it(IN PASS)24移載或投人第i平流輸 路34上。 ❹由，1平流輸送路34之基板G，最初在清潔處理部％ 此I準^子uv照射單兀(E-UV：)36及擦磨清潔單元(SCR)38， 依序進打i外線清潔處理及擦磨清潔處理(步驟S2、s於 ίΐΐΐ(ΓΚ)38 ’對於在平流輸送路34上水平移動之基板 =刷洗或姚，⑽基板表面雜子狀污騎去，之後施以沖 ^处理’最後使用氣刀等使基板G乾燥。擦磨清潔單元(scr)38 、攸，7清潔處縣結束，則基以此狀態從第1平流輸 达路34下來並通過第1熱處理部28。 # ^ 28中’基板G最初在黏附單元(AD)40被施以 ❹f用fl狀HMDS之黏附處理’將被處理面疏水化(步驟S4)。該 後j ί基W卩私(咖)42冷卻魏定基板 部3。 第1平流輸送路34下來，搬入塗 餘ί布f理部3〇中’基板G最初於抗餘劑塗布單元(COT)44維 二使/狹縫喷嘴之非旋轉法在基板頂面(被處理面)塗布 ’之後立即在下游_之輕乾鱗元(VD)46，接受後 述常壓％境下之抗餘劑乾燥處理(步驟S6)。 、、品ΪΪΪ處理部3G之基板G，從第1平流輸送路34下來， 單ΐϋ，32。第2熱處理部32中，基板g最初於預烘 單兀(PRE-ΒΑΚΕ)48贼作為祕舰布狀減理或曝 12 200931561 (步驟S7) °藉由該預烘，將基板G上之抗_膜中 ，留的溶劑祕除去，強化抗_膜對於基板之密合性。其次， ϋ在冷卻單疋(C〇W50冷卻至達既定之基板溫度(步驟S8)。 4 ’ 土板G從第1平流輸送路34之終點的傳遞單元(PASS)52， 退回到界面站(I/F)18之輸送裝置72。 面站⑽)18中，基板G在旋轉台座74接受例如9G度之方 α變，後’搬入周邊裝置76之周邊曝光裝置㈣，在此接受為了 附著在基板G之周邊部的抗蝴在顯影時除去之曝光後， 鄰近之曝光裝置12(步驟S9)。 ❹於曝光裝置12 ’對於基板〇上之抗姓劑施以既定電路圖案曝 光。並且，於經過圖案曝光之基板G，若從曝光裝置12返回界面 站(I/F)18(步驟S9) ’則先搬入周邊裝置76之印字曝光機 (TITLER)，在此，於基板上之既定部位記載既定資訊(步驟“ο)。 之後，基板G利用輸送裝置72搬入布設在處理站(p/s)16之處理 線B側的第2平流輸送路64之顯影單元(dev)54之起點。 以此方式，基板G，現在於第2平流輸送路64上朝處理線b 之下游侧輸送。於最初之顯影單元(DEV)54中，基板G在平流輸 送期間，被，以顯影、沖洗、乾燥之一連串顯影處理(步驟su)。 ❹ 於顯影單凡(DEV)54完成-連串顯影處理之基板g ,以此狀 態乘載於第2平流輸送路64,依序通過第3熱處理部的及檢查單 元(AP)60。於第3熱處理部66中，基板G最初在後烘單s(p〇ST 「BAKE)56接受做為顯影處理後之熱處理的後烘烤(步驟S12)。該 後烘烤將基板G上之抗蝕劑膜殘留的顯影液或清潔液蒸發除去， 強化抗蝕劑圖案對於基板之密合性。其次，基板G，^冷浴卩單元 (COL)58冷卻至既定之基板溫度(步驟s]3)。於檢查單元(Ap)6〇， 對於基板G上之抗蝕劑圖案進行非接觸的線寬檢查或膜質•膜厚 檢查等(步驟S14)。 、 、 搬出單元(OUT PASS)62，從第2平流輸送路64接取完成所 有步驟處理之基板G，遞送到匣盒站(C/S)14之輸送機構22。於匣 13 200931561 •盒站(C/S)14侧，輸送機構22將從搬出單元(〇UT pASS)62接取 之處理严畢的基板G收納於任一(通常為原來的)匣盒c(步驟S1)。 於該塗布顯影處理系統1〇中，本發明可適用於從塗布處理 30之抗蝕劑塗布單元(c〇T)44至第2熱的處理部32之預供單元 (PRE-B^KE)48為止之平流式抗蝕劑處理部(私、46、48)，尤 壓乾燥單元(VD)46。以下，按照圖3〜w 8，說明本發明之較佳 施形態中，平_流式抗蝕劑處理部(44、46、48)之構成及作用。 全體施形態中，平流式抗_處理部(44、46, \布單元_44，包含：塗布用之上浮台座 :構板輸送 ===方向)輸送;抗_喷嘴84,上在上= 處理之;J:幢細6，在塗布 之多孔 有將既定氣體(例如空氣)向上方喷射 力，==頂错面==喷射一Between the processing lines A and B, an auxiliary transport space 68 is provided, and the shuttle mechanism 7G that can horizontally mount the substrate Q position is bidirectionally moved in the processing line direction (X direction) by a drive mechanism (not shown). w = H (I / F) 18 '3 includes a transport device 72 for transporting and holding the substrate G in the first and second advancing transport paths n = the exposure device 12 (f), and a rotating pedestal is disposed around the substrate G (R/S) 74 and peripheral device 76. The rotary cradle () 74' is a pedestal that rotates the substrate G in a horizontal plane, and is used to change the direction of the rectangular substrate g when it is delivered between the device and the exposure 200931561 device 12. The peripheral device % is connected to, for example, a printing exposure machine (TITLER) or a peripheral exposure device (EE) to the second advancing conveying path 64. Fig. 2 shows the processing transition for the sheet substrate in the coating and developing treatment system. First, at the g-box station (C/s), the transport mechanism 22 takes out one substrate G' from the MC of one of the pedestals and carries the taken-out substrate G. To the station 〇>/6 is the loading unit (10) ρ Α %) 24 on the processing line A side (step S1). The substrate G is transferred from the IN PASS 24 or to the i-th advancing channel 34. The substrate G of the 1 advection conveying path 34 is initially in the cleaning processing unit%. The I uv illuminating unit (E-UV:) 36 and the scrub cleaning unit (SCR) 38 are sequentially placed in the outer line. Cleaning treatment and rubbing cleaning treatment (step S2, s ΐΐΐ ΐΐΐ ΐΐΐ 38 38 ' for the substrate moving horizontally on the advection conveying path 34 = brushing or Yao, (10) the surface of the substrate is mixed with dirt, and then applied The process 'finishes the substrate G by using an air knife or the like. The rubbing cleaning unit (scr) 38, 攸, 7 is finished at the end of the cleaning, and the base passes from the first advection path 34 and passes through the first heat treatment portion 28 in this state. # ^ 28中 'The substrate G is initially applied to the adhesion unit (AD) 40 by 黏f with the adhesion treatment of the fl-shaped HMDS' to hydrophobize the treated surface (step S4). The latter j ί 卩 卩 ( 咖42. The Weiding substrate portion 3 is cooled. The first advancing conveying path 34 is lowered, and the loading of the coating material is carried out. The substrate G is initially used in the anti-residue coating unit (COT). The spin method is applied to the top surface of the substrate (the surface to be treated) immediately after the 'light-drying scale (VD) 46 in the downstream direction, and is subjected to the anti-residue drying treatment under the atmospheric pressure % (described later). Step S6) The substrate G of the product processing unit 3G is separated from the first advancing channel 34 by a single turn 32. In the second heat treatment unit 32, the substrate g is initially pre-baked (PRE-ΒΑΚΕ) 48 The thief as a secret ship cloth-like reduction or exposure 12 200931561 (step S7) ° By this pre-baking, the solvent remaining in the anti-film on the substrate G is removed, and the adhesion of the anti-film to the substrate is enhanced. Next, the crucible is cooled to cool the unit (C〇W50 is cooled to a predetermined substrate temperature (step S8). 4' The earth plate G is returned from the transfer unit (PASS) 52 at the end of the first advection path 34 to the interface station ( I/F) 18 transport device 72. In the surface station (10) 18, the substrate G receives a change of, for example, 9G degrees in the rotating pedestal 74, and then moves into the peripheral exposure device (4) of the peripheral device 76, where it is accepted for attachment. After the exposure of the peripheral portion of the substrate G is removed during development, the exposure device 12 is adjacent (step S9). The exposure device 12' is exposed to a predetermined circuit pattern for the anti-surname agent on the substrate. The substrate G that has been subjected to the pattern exposure is returned to the interface by returning from the exposure device 12 to the interface station (I/F) 18 (step S9). In the printing exposure machine (TITLER) of the device 76, predetermined information is described in a predetermined portion on the substrate (step "o". Thereafter, the substrate G is carried into the processing line disposed at the processing station (p/s) 16 by the transport device 72. In this manner, the substrate G is now transported on the second advancing transport path 64 toward the downstream side of the processing line b. In the first development unit ( In the DEV) 54, the substrate G is subjected to a series of development processing (step su) of development, rinsing, and drying during the advection transportation. The substrate g which has been subjected to the development and processing of the DEV 54 is carried in the second advancing path 64, and sequentially passes through the inspection unit (AP) 60 of the third heat treatment unit. In the third heat treatment unit 66, the substrate G is initially subjected to post-baking as a post-development heat treatment in the post-bake s (p〇ST "BAKE" 56) (step S12). The post-baking is performed on the substrate G. The developer or cleaning solution remaining on the resist film is evaporated to enhance the adhesion of the resist pattern to the substrate. Second, the substrate G, the cold bath unit (COL) 58 is cooled to a predetermined substrate temperature (step s) 3) In the inspection unit (Ap) 6 〇, a non-contact line width inspection, a film quality, a film thickness inspection, etc. are performed on the resist pattern on the substrate G (step S14), and an unloading unit (OUT PASS) 62, The substrate G that has completed all the steps of processing is taken from the second advection conveying path 64 and delivered to the conveying mechanism 22 of the cassette station (C/S) 14. On the side of the cassette station (C/S) 14 on the side of the cassette station (C/S) 14 22 The substrate G that has been subjected to the processing from the carry-out unit (〇UT pASS) 62 is stored in any (usually the original) cassette c (step S1). In the coating and developing treatment system 1A, the present invention It can be applied to the advection type from the resist coating unit (c〇T) 44 of the coating process 30 to the pre-supply unit (PRE-B^KE) 48 of the second heat processing unit 32. Etchant treatment unit (private, 46, 48), special pressure drying unit (VD) 46. Hereinafter, in the preferred embodiment of the present invention, a flat-flow resist treatment portion will be described (Fig. 3 to w8). 44, 46, 48) Composition and function. In the whole application mode, the advection type anti-processing unit (44, 46, \ cloth unit_44, including: upper floating platform for coating: plate conveying === direction) conveying ; anti-nozzle 84, upper on = treated; J: thin 6 in the coated porous body, a predetermined gas (for example, air) is sprayed upward, == top error surface == spray one
必I 基板輸送機構82，且借· ,_ 4ja i# +L ΠΛ A 可沿著：== 向)垂直之水平方向(Y方^^^座80之上方於與輸送方向(χ方 之噴吐口在既定之i布位申之長形喷嘴，利用狹縫狀 將抗餘劑液以帶狀喷吐。f對過其正下方之基板G之頂面， 之噴嘴支持構件94 一蝕劑喷嘴84，可以與固持該喷嘴 體地於X方向移動，且可於Z方向升降，能 200931561 •在上述塗布位置與喷嘴重清部86之間移動。 96所1% ’在上浮台座8G上方之既定位置由支柱構件 掛於:預備注給處卿98，作為塗布處理之前置準備， 84 ^二哈嘴84喷!^抗侧液；*嘴浴100 ’防止抗蚀劑喷嘴 麵二，將二H㈣使保f在溶賴氣之環境巾；喷嘴清潔 除去。、、者几蝕劑喷嘴84之抗蝕劑喷吐口附近的抗蝕劑 ° * #1搬入抓宕古μ a A二里邛Μ圖丨)例如滾動輸送送來的基板G， 〇 :92°固持並 1二。其二上之前端側的搬入部，在此待機之滑動機 =孔ί ====錢上，編讎氣體 態。㈣之减(工乳)的壓力，以大致水平姿勢維持上浮狀 (vD)iti=fm92目料絲讀態，常觀燥單元 84之下時，'^由使抗朝G通過抗蝕劑喷嘴 ❹ 方式，形成ί面抗之塗端朝向後端以布設地毯之 L過?後!藉由滑動機構92在上浮台座8〇上進 (VD)46。维持1平流方式搬入後後排之常壓乾燥單元 A · Ϊ触於，Ϊ施形態中’係將含有PGMEA(㈣·二醇·單曱 土 3布23乍為溶劑之正型抗姓劑塗布在基板0上〇 _6;後%3= 反方式，送出到常壓乾燥單元 ⑽之前端側之搬人^又為了f 基板G，返_上浮台座 彳ΐίϊΓβίΓ咖域置)移綱喷嘴重清部％ 噴鳥洗務或預備注給處理等重清或前置準備後，返回 15 200931561 塗布位置。 sn 戶’、在抗触劑塗布單元(COT)44之塗布用上浮台座 $ 1 rum®tIT游侧夾持著第1遞送及上浮輸送驅動用之滾 於甘ί且括有*壓乾燥單元(VD)46之冷卻用上浮台座106,再者， :/力長線下游侧)’爽著第2遞送及上浮輸送驅動用滾子108 j有預科tc(PRE_bake)48之加熱用上浮台座UG。抗蚀劑塗 布单兀(COT)4j及預烘單元(pRE_BAKE)48任一者均為，在輸送方 向(X方向；)以一較基板G為相當小(亦可能為1/s以下〕之尺寸構成。 ΟI must be the substrate transport mechanism 82, and borrow · , _ 4ja i# + L ΠΛ A can be along the vertical direction of the :== direction (Y square ^ ^ ^ seat 80 above and the transport direction (the spray The spout is formed in the elongated nozzle of the predetermined i-slot, and the anti-residue liquid is sputtered in a strip shape by the slit shape. The nozzle supporting member 94 is formed on the top surface of the substrate G directly below the nozzle holder 84. It can move in the X direction with the holding of the nozzle body, and can be raised and lowered in the Z direction, and can be moved between the above-mentioned coating position and the nozzle re-clearing portion 86. 96% of the '1%' at a predetermined position above the floating pedestal 8G Hanged by the pillar member: pre-filled to the clerk 98, prepared as a coating treatment, 84 ^ two ha mouth 84 spray! ^ anti-side liquid; * mouth bath 100 'prevent the resist nozzle face two, will two H (four) The protective agent is cleaned and removed, and the resist near the resist spout of the etchant nozzle 84 is moved to the vicinity of the resist spout of the etchant nozzle 84.丨) For example, the substrate G that is transported by rolling is transported at 92° and held at 12. The second moving part of the front end side, where the standby slide machine = hole ί = === On the money, compile the gas state. (4) The pressure of the reduction (working milk) is maintained in a generally horizontal position (vD) iti = fm92 mesh material read state, often under the drying unit 84, ' ^ By the anti-G to the G through the resist nozzle ,, the lacquered end is formed toward the rear end to lie the rug of the rug! After the floating pedestal 8 is advanced (VD) 46 by the sliding mechanism 92. Maintaining the normal pressure drying unit A in the rear row after the advection method is carried out. · In the case of the application form, the positive anti-surname agent containing PGMEA ((4)·diol·monoterpene 3 cloth 23乍 as a solvent is coated.基板_6 on the substrate 0; after %3= reverse mode, the transfer to the front side of the atmospheric drying unit (10) is carried out, and for the f substrate G, the _ floating platform 彳ΐ ϊΓ Γ Γ Γ Γ Γ 移 移 喷嘴 喷嘴 喷嘴Part% After the bird cleaning or pre-filling, such as re-cleaning or pre-preparation, return to the 15 200931561 coating position. sn household', coating anti-contact agent coating unit (COT) 44 coating floating pedestal $ 1 rum®tIT The floating side pedestal 106 for cooling the first delivery and the floating conveyance driving and including the *pressure drying unit (VD) 46 is held on the side of the swimming side, and further, the force is long. The downstream side of the line) 'cooling the second delivery and floating transport drive roller 108 j has a heating vacant pedestal UG for the prepx tc (PRE_bake) 48. Each of the resist coated single crucible (COT) 4j and the pre-baking unit (pRE_BAKE) 48 is relatively small (may be 1/s or less) in the transport direction (X direction;) compared to the substrate G. Dimensional composition. Ο
圖,4顯不常壓乾燥單元(^)46及預烘單元(pRE_BAKE)48内 之更詳細構成的概略剖面圖。 於常，乾燥單元(VD)46中，在冷卻用上浮台座106之頂面， 為J於大氣駐缝下*絲G較仙1()()μιη以下(嫩α 50㈣ 之U小間隙或上浮南度浮起，以適當排列圖案混雜存在設有：嗔 射孔，使高壓或正壓之壓縮空氣噴出；及吸引孔112，以負壓 使空氣吸入。並且，如圖5所示，在上浮台座1〇6之上輸送基板 G時，從噴射孔ill利用壓縮空氣施加垂直向上之力，同時藉由 吸引孔112以負壓吸引力施加垂直向下之力，藉由控制相對抗之 雙向力的平衡’而使得基板G之上浮高度hs維持在適於上浮輸送 及基板冷卻之設定値(例如50μιη)附近。 又，於上述抗蝕劑塗布單元(C〇T)44之塗布用上浮台座80亦 為，為了使基板上浮高度安定化，亦可與噴射孔88混雜存在設有 吸引孔(未圖示），以使得藉由噴射孔88對基板G給予之垂直向上 之力(上浮力)與藉由吸引孔對於基板〇給予之垂直向下之力（引力) 達平衡。 冷卻用上浮台座106之内部，設有：正壓歧管U4，與各喷射 孔111連接；負壓歧管116,與各吸引孔112連接；及冷媒通路118。 正壓歧管114,從上浮台座1〇6外之壓縮空氣供給源12〇經由 氣體供給管122導入既定壓力之壓縮空氣，以大致均勻壓力將壓 縮空氣分配供給到上浮台座106頂面之各喷射孔in 〇壓縮空氣供 200931561 廠公舰，繼贱賴縮 經f真奸126而連接於上浮台座伽外之真 ^ Γ4 1112 r^1 廠公用設施。 異/原以，可使用例如真空泵浦或工 結合=====頂面熱 ❹ ν^ΐίτ^, ===5〜和°村_使瓣制器(未^ = 106之上方，長形氣體喷嘴134及吸入口 中，隔，以餘方式配置。圖示例 游側。氣向)之上 離(例如5〜15mm)之間隙，在與輸送方向垂ΐ之; ❹申吸人嘱口)136亦與__之喷吐口 座⑵：：：==== =38及达風機140經由氣體供給管142送過來的^燥體二 内===用空氣AR導入’將導入的乾燥用空氣ar、通到喷嘴 〇;- •、排乳& 146而連通排氣泵浦或排氣風扇内建之排氣部144，從氣 17 200931561 ，喷嘴I/4沿著基板G之頂面流過來的乾燥用空氣AR與周圍空 氣或乾煉處理中從基板G上之抗蝕劑塗布膜rm所蒸發的溶劑一 起吸入。又，乾燥用空氣AR之溫度以常溫以上較佳。 其次，說明預烘單元(PRE_BAKE)48之構成。於該單元中亦 為:為了於大氣壓或常壓下使基板G穩定地以微小間隙或上浮高 度浮起，在加熱用上浮台座110之頂面，以適當排列圖案混雜^ 在配置：喷射孔150，喷出高壓或正壓之壓縮空氣；吸引孔152， 以，壓將空氣吸入。並且，如圖5所示，從喷射孔15〇利用壓縮 空氣施加垂直向亡之力，同時從吸引孔152利用負壓吸引力施加 ❹垂直向了之力’藉由控制相對抗之雙向之力平衡，能使得基板G 之上浮尚度Hs維持在適於上浮輸送及基板加熱之設定値附近。 於加熱用上浮台座11〇之内部，設有：正壓歧管154，與各噴 射孔150連接；負壓歧管156，與各吸引孔152連接； 158，例如由電阻發熱元件所構成。 發熟兀件 _正壓歧管154，係用以使各喷射孔111的喷射壓力均勻化者， 經由氣體供給管162而連接於上浮台座11〇外之壓縮空氣源16〇。 負壓歧管156 ’係用以使各吸引孔152之吸引力均勻化者，經由真 空供給管166而連接於台座11〇外之真空源164。發埶元件158， 係與上浮台座110之上部熱結合，若接受來自於加熱器電源168 之電力供、給’則通電並產生焦耳熱，將台座頂面加熱到設定溫 如 90°C 〜130°〇。 於加熱用上浮台座110之延長線上(下游側），設有沿著輸送線 將多數滾子170以固定間隔布設而成的滾動輸送路172。該滾動輪 送路172，延伸到冷卻單元((：〇1^)5〇及傳遞單元(pASS)52(圖1}。 又，該實施形態中所有的滾子，例如第〗及第2遞送及上浮 ^送驅動用之滾子1〇4、1〇8及滾動輸送路172之滚子17〇等，圖 示雖省略’係以可旋轉地固持在固定在例如框架等之軸承，經由 齒輪機構或傳送帶機構等傳動機構而連接於電動馬達等輸送驅 源。 200931561 又，不僅是上述抗蝕劑塗布單元(COT)44内之各 煉早兀(VD)46及預烘單元(PRE —BAKE)48内之各部，亦受 6 不之控制器控制。控制器以微電腦構成時，可藉 全體之動作(順序)統籌控制。 役稱將裝置 在常壓乾燥單元卿6及預供單元_ — 如上所述，於上游側鄰之抗蝕劑塗布單元(c ，從塗布用上浮台座8〇藉由滚丄 f乾餘早tl(VD)46之冷卻用上浮台座1〇6，並藉由滾子1〇4 乂 ©動力’與至此為止同樣的平流方式，輸送到相同方向(X方向之 上此:剛塗布抗蝕劑液後之基板G，於常溫及常 下之狀態，被搬入到冷卻用上浮台座106之上。 的微用上浮台座廳上以與熱傳導接觸為大致同樣 換，，，，利用與熱容大的台座106間的熱交 、丨nif 的吊奴冷卻到與台座頂面為大略相同溫度(例如5 © 從該ίί細之料，絲板GJ1之練劑塗布膜 谷士二Ϊ面冷部，如圖6所示’抑制抗蚀劑塗布膜腿内之下層 $中^層主體部之溶劑液相擴散’尤其往揮發方向(上方)之液相擴 散^ P ’液相擴散速度’較在常溫下之至此為止之速度為較慢。 心’基板G通過氣體喷嘴134之下時，或剛通過後， 134之乾燥用空氣AR，接觸到基板G之頂面亦 ίΐ，表面。藉此，如圖6所示，促進抗蝕劑塗布 表層部的溶麵散，尤其往空中之氣相擴散(揮發）。 膜於常壓乾燥單元(vd)46，基板g上之抗姓劑塗布 卻至當、^π/下^上子輸送中，通過上浮台座1〇6從基板背側冷 氣AR :上了之溫度的狀態’從上方之氣體喷嘴134使乾燥用空 之矣廢#吊:以上之溫度接觸到膜表面。如此，抗蚀劑塗布膜^ 兴节许。之氣相擴散速度Vu與下層至中間層之主體部之液相擴 月、又L之間，以Vu〉VL之大小關係產生差異（或差異擴大）， 19 200931561 1藉此，可以維持主體部之液狀至潮濕半乾狀態，僅使表層部適度 ，糊級職織之飾為同質之抗 於常壓乾燥單元(VD)46結束如域常壓乾燥處理之基板〇， 藉由滾子108被搬入到預烘單元(PR£_bake)48之加 =，並利用滾子灌之驅動力與至此為止_的平;危方式 上/手口座110之上於同一方向(X方向)輸送。Fig. 4 is a schematic cross-sectional view showing a more detailed configuration of the drying unit (^) 46 and the pre-baking unit (pRE_BAKE) 48. As usual, in the drying unit (VD) 46, on the top surface of the floating floating pedestal 106, it is J at the atmospheric sulcus, and the wire G is lower than the singular 1 () () μιη (negative α 50 (four) U small gap or floating The south floats up, and is arranged in a proper arrangement pattern: a perforating hole is used to eject the compressed air of high pressure or positive pressure; and the suction hole 112 sucks the air with a negative pressure. And, as shown in FIG. 5, floating upward When the substrate G is transported on the pedestal 1〇6, a vertical upward force is applied from the injection hole ill by the compressed air, and a vertical downward force is applied by the suction hole 112 with a negative pressure attraction force, thereby controlling the mutual resistance against the two-way force. The balance ' is such that the floating height hs above the substrate G is maintained in the vicinity of the setting 値 (for example, 50 μm) suitable for the floating conveyance and the substrate cooling. Further, the floating pedestal 80 for coating is applied to the resist coating unit (C〇T) 44 described above. Further, in order to stabilize the floating height of the substrate, a suction hole (not shown) may be provided in the injection hole 88 so that the vertical upward force (upward buoyancy) given to the substrate G by the ejection hole 88 is The vertical downward force imparted to the substrate by the attraction holes ( The balance of the floating floating pedestal 106 is provided with a positive pressure manifold U4 connected to each of the injection holes 111, a negative pressure manifold 116 connected to each of the suction holes 112, and a refrigerant passage 118. The tube 114, the compressed air supply source 12 from the floating pedestal 1 〇 6 is introduced into the compressed air of a predetermined pressure via the gas supply pipe 122, and distributes the compressed air to the respective injection holes in the top surface of the floating pedestal 106 at a substantially uniform pressure. Compressed air for the 200931561 factory public ship, following the smashing of the sacred 126 and connected to the floating pedestal gamma outside the true ^ Γ 4 1112 r ^ 1 factory public facilities. Different / original, can be used, for example, vacuum pump or work combination = ====Top surface heat ν ν ΐ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ τ The example of the figure is on the side of the swim. The gap above (for example, 5~15mm) is in the direction of the conveying direction; the ❹ 吸 嘱 ) 136 136 136 136 与 与 与 _ ( ( ( ( ( (2):::== ===38 and the air blower 140 is sent through the gas supply pipe 142. Air ar, to the nozzle 〇; - •, milk & 146 and connected to the exhaust pump or exhaust fan built-in exhaust 144, from the gas 17 200931561, nozzle I / 4 along the top surface of the substrate G The flowing drying air AR is taken in together with the solvent evaporated from the resist coating film rm on the substrate G in the ambient air or the dry processing. Further, the temperature of the drying air AR is preferably at a normal temperature or higher. Next, the configuration of the pre-baking unit (PRE_BAKE) 48 will be described. In the unit, in order to stably float the substrate G with a small gap or a floating height under atmospheric pressure or normal pressure, the top surface of the heating floating platform 110 is mixed in an appropriate arrangement pattern. , the compressed air of high pressure or positive pressure is sprayed; the hole 152 is sucked to pressurize the air. Further, as shown in Fig. 5, the vertical dead force is applied from the injection hole 15〇 by the compressed air, and the force perpendicular to the force is applied from the suction hole 152 by the suction attraction 152. Balanced, the floating degree Hs on the substrate G can be maintained in the vicinity of the setting 适于 suitable for the floating transport and the substrate heating. Inside the heating floating pedestal 11 is provided with a positive pressure manifold 154 connected to each of the injection holes 150, a negative pressure manifold 156 connected to each of the suction holes 152, and 158, for example, a resistance heating element. The nipple _ positive pressure manifold 154 is used to make the injection pressure of each injection hole 111 uniform, and is connected to the compressed air source 16 〇 outside the floating pedestal 11 via the gas supply pipe 162. The negative pressure manifold 156' is used to make the suction force of each of the suction holes 152 uniform, and is connected to the vacuum source 164 outside the pedestal 11 via the vacuum supply pipe 166. The hairpin element 158 is thermally coupled to the upper portion of the floating pedestal 110. If power is supplied from the heater power source 168, the power is supplied to generate Joule heat, and the top surface of the pedestal is heated to a set temperature such as 90 ° C to 130 °〇. On the extension line (downstream side) of the heating floating stage pedestal 110, a rolling conveyance path 172 in which a plurality of rollers 170 are arranged at regular intervals along the conveying line is provided. The scroll wheel feed path 172 extends to the cooling unit ((: 〇1^) 5〇 and the transfer unit (pASS) 52 (Fig. 1). Further, all the rollers in this embodiment, for example, the second and second delivery And the rollers 1〇4 and 1〇8 for the upper-lowering drive and the rollers 17〇 of the rolling conveyance path 172, etc., and the illustrations are omitted to be rotatably held by bearings fixed to, for example, a frame, via gears. A transmission mechanism such as a mechanism or a belt mechanism is connected to a transport drive source such as an electric motor. 200931561 In addition, not only the refining early (VD) 46 and the pre-baking unit (PRE-BAKE) in the resist coating unit (COT) 44 described above. The various parts of the 48 are also controlled by the controller of 6. If the controller is composed of a microcomputer, it can be controlled by the whole action (sequence). The service is to be installed in the atmospheric drying unit 6 and the pre-supply unit _ As described above, the resist coating unit (c, which is adjacent to the upstream side, is floated by the floating pedestal 8 涂布 from the coating, and the floating pedestal 1 〇 6 is cooled by the t (f) Sub 1〇4 乂©Power' is the same advection method as before, and is transported to the same direction (above X direction: just coated The substrate G after the resist liquid is placed on the cooling floating pedestal 106 at a normal temperature and a normal state. The micro-use floating pedestal hall is replaced by the heat conduction contact, and is used in the same manner. The heat exchange between the pedestal 106 and the 丨nif of the heat capacity are cooled to the same temperature as the top surface of the pedestal (for example, 5 © from the 之 之 , , 丝 丝 丝 G G G G G G G G G G G G G The cold portion, as shown in Fig. 6, 'suppresses the liquid phase diffusion of the solvent in the lower portion of the resist coating film leg, especially in the volatilization direction (above), liquid phase diffusion rate The speed is relatively slower than at normal temperature. When the heart 'substrate G passes under the gas nozzle 134, or just after passing, the drying air AR of 134 contacts the top surface of the substrate G, and the surface is borrowed. Therefore, as shown in FIG. 6, the dissolution surface of the resist coating surface layer is promoted, especially in the gas phase in the air (vd). The film is coated on the atmospheric drying unit (vd) 46, and the anti-surname agent on the substrate g But when it is, ^π/下^上子输送, through the floating pedestal 1〇6 from the back side of the substrate cold air AR : The state of the temperature has been taken from the upper gas nozzle 134 to make the drying empty. #吊: The above temperature is in contact with the surface of the film. Thus, the resist coating film is favorable. The gas phase diffusion velocity Vu Between the liquid phase expansion of the main body of the lower layer to the intermediate layer and the L, a difference (or a difference in expansion) occurs in the relationship of Vu>VL, 19 200931561 1 thereby maintaining the liquid to wet half of the main body portion In the dry state, only the surface layer portion is moderate, and the paste-grade woven fabric is homogenous to the substrate 〇 which is subjected to the atmospheric pressure drying unit (VD) 46 and is subjected to the field normal pressure drying treatment, and is carried into the pre-drying unit by the roller 108. (PR £_bake) 48 plus =, and the driving force of the roller irrigation is used to be flat until now; the dangerous mode is upper than the hand seat 110 in the same direction (X direction).
於加熱用上浮台座110上，基板〇由於在冷卻用上浮台座ι〇6 ^熱傳導接觸為賴樣之微小上浮高度上浮，因此，藉由與熱 ❹，大之台。座11。’熱交換’加熱顺台座職為大致相溫J 〜13^c)。藉由從該基板背側的高溫及急速加熱，促ί :土板G上之抗蝕劑塗布膜_之主體部往 ^ 相纖觸，強化抗_塗布膜應對於基板方:二擴散$氣 進行預輯之加熱處辦，即使受到來自科狀又’ 腿之主體部的變動有不均勻的傾向，但是由於^ 抑均勻的變動，因此於抗飿劑塗布膜聰不易發ί ❹ =預烘單元(PRE_BAKE)48結束預烘處理之基板g 袞動輸送之平流方式，送往下游_之冷卻單元 以平流進行。藉此，台t洁士、壯里接士、—丄i勺在同輸送線上 本化。 i触裝置構成之大巾_化、小型化及低成 _，常^乾中，可㈣於基板G上之抗_塗布膜 理。因ί 處理施加與減壓乾燥同等之抗_表面處 乾燥斑之發2 ,內於5日:’ =主體抗蝕劑之流動而減低 20 200931561 sjm曲而:裝載/卸載時發生位置偏離或碰撞、破損等 鯖决再者，可以不使用支持銷，因此， 敏損寻 上轉印痕跡之虞。:⑽， 在品質面__^==_乾_，因此， 古如i ’，#劑塗布單元(co 丁)44錄板g上塗布抗蚀劑液後 擴S氣自___之液相 1 壓下該等擴散會進行(持續）。習知的 Ο乾烊處理ΗΡ ίϊΐϊ減壓乾燥裝置費時，因此在減壓 3 tt ί布膜乾燥過*，有減低減壓乾燥效果 rr〇TU4 ^ μ實施形悲中，由於基板從抗姓劑塗布單元 ΐϊ常壓乾燥單元_6能以平_丨地在 遲利用常壓乾鮮元(VD)46之乾燥處理開始ΐ i板紐塗布之效果。該點亦能翻地因應 於月之較佳實施形態説明’但是本發明不限 ；述實也形心，可在其技術思想範圍内進行各種變形。 /如二於上述實施形態中，在常壓乾燥單元(vd)46中，設 ❿=卻用上浮台座106及氣體喷嘴134各丨個^但是，亦可設置 數數台的上浮台座106或多數根的氣體喷嘴134。 A细，有2之上浮台座1G6(1G6A、麵)時，可各使用個別的 :部器早兀128A、128B，獨立設定各上浮台座1〇6A、1〇6B之基 板冷卻溫度。在此，亦可促進各上浮台座1〇6A、1〇犯上利 體喷嘴134之氣相擴散。但是，例如圖7所示，亦可在前排上浮 f座106A上不促進利用氣體喷嘴134之氣相擴散，而藉由從上浮 〇座106A側之基板冷卻，將抗蝕劑塗布膜rm内之液相擴散戋氣 相擴散速度適度抑制或調整，並且於後排上浮台座1〇6B上，使利 用氣體喷嘴134之氣相擴散促進與利用上浮台座1〇6B之液相擴散 抑制同時進行。 21 200931561 又圖示雖名略，但是亦可為抗韻劑塗布單元(C 44之較 二ίίΐ送:游側之區間，在塗布用上浮台座80上 洋Μ 106: 用^1子台座Ι〇6Α*前排乾燥及後排乾燥用上 /併入圖4之上浮台座106之構成等。於該 ^處理。1板上塗布抗储 1液後立賴始本發明之常麼乾 又，如圖7所示，亦可在乾燥空氣供給線設置加熱器】％， 燥用空氣AR以較常溫更為高溫(例如50°c以上） ❹面’藉此’能增大利用氣體噴嘴134之氣 ❹j擴祕進絲。又，乾_氣體秘於域，例如亦可為氣氣 中，亦可將例如傳送帶輸送路作為上 二口糸评i外之平^輸送路’或如圖8所示，使用滾動輸送路 Π6。於輯形，可在構成滾動輸送路176之滾子178 卻通路’並且從冷卻器單元18〇通過適當配 ^ ^ 子内=冷卻通路。藉此，可將在滾動輸送路m上 通過滾子178而冷卻，並將絲G上之抗 以較常溫更紅溫度冷卻。又，好178，f ❹於轴方向相同的管形者，使與基板G之背面間的接觸面積Ht) 又，從軋體喷嘴134接觸乾燥用空氣AR之方向可為任童， 8f Γ^σ 136 5 ^ 在下游側，使乾燥用空氣AR與基板輸送方向逆向流動β 風f ί ί 不制氣射嘴134，亦即不使乾_氣體之 RM表面G之頂面，而將基板G上之抗蚀劑塗布膜 皿以上溫度之常壓環境中，僅以從平流輸送路側之 冷部a施本發明之常溫乾燥處理。 或加熱用台座110，，真空機構(吸引孔 臭搞h—i 16、156、真空源124、164等)係用於提升 •基板切4之精度、敎性者，並社浮輸騎絕對必要。因 22 200931561 此，為了簡化台座構成，亦可省略該種的真空機構。 又’如圖8所示，在預烘單元(PRE-BAKE)48中，亦可設置滚 動輸送路183作為上浮台座110以外之平流加熱手段，並且 鄰接之滾子184、184之間放置放熱板186。 本發明之常壓乾燥法，一般適用在如上述實施形態之正型抗 蝕劑，但亦可應用在負型抗蝕劑，亦可用在彩色抗蝕劑或有機^ 蚀劑等。 本發明之中，被處理基板不限於LCD用玻璃基板，也可為其 ，平面顯示器用基板，或半導體晶圓、CD基板、光罩、印刷基板 Ο等。處理液亦不限於抗蝕劑液，可為例如層間絶緣材料、介電體 材料、配線材料等的處理液。 【圖式簡單說明】 圖1顯示可應用本發明之塗布顯影處理系統之構成俯視圖。 圖2顯示上述塗布顯影處理系統中，處理步驟之流程圖。 圖3顯示實施形態中，抗蝕劑處理部之全體構成俯視圖。 圖4顯示實施形態中，常壓乾燥單元及預烘單元之構 面 圖。 〇 圖5顯示說明實施形態之冷卻用上浮台座及加熱用上浮台座 中’基板上浮高度之控制的概略側面圖。 圖6顯示說明實施形態中，常壓乾燥處理作用之示意剖面圖。 圖7為利用實施形態之一變形例，顯示常壓乾燥單元構成之 示意侧面圖。 抑_圖8為利用實施形態之一變形例，顯示常壓乾燥單元及預烘 單元之構成示意側面圖。 【主要元件符號說明】 AR空氣 ‘ A 處理線 23 200931561 AD 黏附單元 AP 檢查單元 B 處理線 C 匣盒 COL 冷卻單元 COT 抗触劑塗布單元 DEV 顯影單元 EE 周邊曝光裝置 E-UV 準分子UV照射單元 G 基板 I/F 界面站 IN PASS搬入單元 OUT PASS 搬出單元 PASS 傳遞單元 POST-BAKE後烘單元 PRE-BAKE 預烘單元 R/S 旋轉台座 RM 塗布膜 SCR 擦磨清潔單元 TITLER 印字曝光機 VD 常壓乾燥單元 10 塗布顯影處理系統 12 外部曝光裝置 14 匣盒站(C/S) 16 處理站(P/S) 18 界面站(I/F) 20 匣盒台座 22 輸送機構 22a 輸送臂 200931561 1 24 搬入單元(IN PASS) 26 清潔處理部 28 第1熱處理部 30 塗布處理部 32 第2熱處理部 34 第1平流輸送路 36 準分子UV照射單元(E-UV) 38 擦磨清潔單元(SCR) 40 黏附單元(AD) ❹42 冷卻單元(COL) 44 抗蝕劑塗布單元(COT) 46 常壓乾燥單元(VD) 48 預烘單元(PRE-BAKE) 50 冷卻單元(COL) 52 傳遞單元(PASS) 54 顯影單元(DEV) 56 後烘單元(POST —BAKE) 58 冷卻單元(COL) 60 檢查單元(AP) ° 62 搬出單元(OUT PASS) 64 第2平流輸送路 66 第3熱處理部 68 辅助輸送空間 70 穿梭機構 72 輸送裝置 74 旋轉台座(R/S) 76 周邊裝置 80 塗布用之上浮台座 82 基板輸送機構 25 200931561 ’ 84 抗蝕劑喷嘴 86 喷嘴重清部 88 喷射孔 90A 導執 90B 導軌 92 滑動機構 94 喷嘴支持構件 96 支柱構件 98 預備注給處理部 〇 100 喷嘴浴 102 喷嘴清潔機構 104 滾子 106 上浮台座 106Α 上浮台座 106Β 上浮台座 108 滾子 110 上浮台座(台座） 111 噴射孔 ο 112 吸引孔 ° 114 正壓歧管 116 負壓歧管 118 冷媒通路 120 壓縮空氣供給源 122 氣體供給管 124 真空源 126 真空管 128 冷卻器單元 128A 冷卻器單元 128B 冷卻器單元 26 200931561 ，130 配管 132 配管 134 氣體喷嘴 134a 多孔板 136 吸入口 (排氣口） 138 乾燥用氣體供給源 140 送風機 142 氣體供給管 144 排氣部 〇 146 排氣管 150 喷射孔 152 吸引孔 154 正壓歧管 156 負壓歧管 158 發熱元件 160 壓縮空氣源 162 氣體供給管 164 真空源 _ 166 真空供給管 ❹⑽ 加熱器電源 170 滾子 172 滾動輸送路 174 加熱器 176 滾動輸送路 178 滾子 180 冷卻器單元 183 滾動輸送路 184 滾子 186 放熱板 27On the upper floating pedestal 110 for heating, the substrate 上 floats due to the small floating height of the cooling floating pedestal 〇 6 ^ heat conduction contact, and therefore, it is enlarged by heat. Block 11. The 'heat exchange' heats the station to the approximate phase temperature J ~ 13^c). By heating from the high temperature and rapid heating on the back side of the substrate, the main body of the resist coating film on the soil plate G is in contact with the fiber, and the anti-coating film should be on the substrate side: In the pre-programmed heating, even if there is a tendency for the change from the main body of the leg to be uneven, the uniformity of the film is not easy to be applied to the anti-caries coating film. The unit (PRE_BAKE) 48 ends the pre-baking process of the substrate g turbulent transport in the advection mode, and the cooling unit sent to the downstream _ is performed in an advection. In this way, the Taiwan T-Jie, the Zili-Liu, and the 丄i spoon are on the same conveyor line. The large towel formed by the i-touch device is _, miniaturized, and low-formed, and can be used as an anti-coating film on the substrate G. Because ί treatment applies the same anti-drying effect as the dry spot on the surface 2, within 5 days: ' = the flow of the main resist is reduced by 20 200931561 sjm curved: positional deviation or collision occurs during loading/unloading If you break the damage, you can use the support pin. Therefore, you can find the trace of the transfer mark. :(10), in the quality surface __^==_dry_, therefore, the ancient as i ', #剂 coating unit (co丁) 44 recording plate g coated with resist liquid and then expanded S gas from ___ The diffusion of phase 1 will proceed (continued). The conventional dry-drying treatment ΗΡ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ , , ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ ϊΐϊ 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 减压 , 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 The coating unit ΐϊ atmospheric drying unit _6 can start the application of the 板 i plate coating in a dry process using the normal pressure dry fresh (VD) 46 in a late manner. This point can also be turned over in response to the preferred embodiment of the month. However, the present invention is not limited thereto; the description is also true, and various modifications can be made within the scope of the technical idea. In the above embodiment, in the normal pressure drying unit (vd) 46, it is assumed that the upper stage 106 and the gas nozzle 134 are each used, but a plurality of floating stages 106 or a plurality of units may be provided. Root gas nozzle 134. A fine, when there are 2 floating table seats 1G6 (1G6A, surface), each can be used individually: the unit is earlier than 128A, 128B, independently set the cooling temperature of the base plate of each floating platform 1〇6A, 1〇6B. Here, it is also possible to promote the gas phase diffusion of the upper floating nozzles 134A, 1A, and the upper nozzles 134. However, for example, as shown in FIG. 7, the gas phase diffusion by the gas nozzle 134 may not be promoted on the front row floating block 106A, and the resist coating film rm may be cooled by the substrate from the upper floating sill 106A side. The liquid phase diffusion 戋 gas phase diffusion rate is moderately suppressed or adjusted, and the vapor phase diffusion promotion by the gas nozzle 134 is simultaneously performed with the liquid phase diffusion suppression by the floating pedestal 1 〇 6B on the rear row floating pedestal 1 〇 6B. 21 200931561 The illustration is abbreviated, but it can also be a rhyme-coating unit (C 44 is the same as the two ίίΐ: on the side of the swim, on the floating pedestal 80 for coating. 106: Using the ^1 sub-seat Ι〇 6Α* front row drying and rear row drying are used/incorporated into the structure of the floating platform 106 on the top of Fig. 4. In this treatment, 1 plate is coated with anti-storage liquid 1 and then the invention is dried. As shown in Fig. 7, the heater can be set to % on the dry air supply line, and the dry air AR can be heated at a higher temperature than the normal temperature (for example, 50 ° C or more). ❹j 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密 密The rolling conveyance path 6 is used. In the shape of the roll, the roller 178 constituting the rolling conveyance path 176 can be passaged and passed through the appropriate cooling unit 18 from the cooler unit 18 to the cooling passage. The conveying path m is cooled by the roller 178, and the resistance on the wire G is cooled at a temperature higher than normal temperature. Further, 178, f ❹ The contact shape Ht) between the back surface of the substrate G and the back surface of the substrate G, and the direction in which the drying air AR is contacted from the rolling body nozzle 134 can be any child, 8f Γ^σ 136 5 ^ on the downstream side, The drying air AR is reversely flowed in the direction of the substrate transporting. The wind is not formed, that is, the top surface of the RM surface G of the dry gas is not applied, and the resist is coated on the substrate G. In the normal pressure environment of the above temperature, the room temperature drying treatment of the present invention is applied only from the cold portion a on the side of the advection conveying path. Or the heating pedestal 110, the vacuum mechanism (suction hole odor, h-i 16, 156, vacuum source 124, 164, etc.) is used to improve the accuracy and sturdiness of the substrate cutting 4, and it is absolutely necessary to ride the float. . According to 22 200931561, in order to simplify the pedestal structure, such a vacuum mechanism can be omitted. Further, as shown in FIG. 8, in the pre-baking unit (PRE-BAKE) 48, a rolling conveyance path 183 may be provided as a flat flow heating means other than the floating pedestal 110, and a heat release is placed between the adjacent rollers 184, 184. Board 186. The atmospheric drying method of the present invention is generally applied to the positive resist as in the above embodiment, but it can also be applied to a negative resist, a color resist or an organic resist. In the present invention, the substrate to be processed is not limited to the glass substrate for LCD, and may be a substrate for a flat display, or a semiconductor wafer, a CD substrate, a photomask, a printed substrate, or the like. The treatment liquid is not limited to the resist liquid, and may be, for example, a treatment liquid such as an interlayer insulating material, a dielectric material, or a wiring material. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view showing the configuration of a coating and developing treatment system to which the present invention can be applied. Fig. 2 is a flow chart showing the processing steps in the above coating and developing treatment system. Fig. 3 is a plan view showing the entire configuration of a resist processing unit in the embodiment. Fig. 4 is a view showing the configuration of an atmospheric drying unit and a pre-baking unit in the embodiment. Fig. 5 is a schematic side view showing the control of the floating height of the substrate in the floating floating pedestal and the heating floating pedestal according to the embodiment. Fig. 6 is a schematic cross-sectional view showing the action of the atmospheric pressure drying treatment in the embodiment. Fig. 7 is a schematic side view showing the configuration of an atmospheric pressure drying unit according to a modification of the embodiment. Fig. 8 is a schematic side view showing the configuration of a normal pressure drying unit and a pre-baking unit, using a modification of the embodiment. [Main component symbol description] AR air ' A processing line 23 200931561 AD Adhesive unit AP inspection unit B processing line C COL COL cooling unit COT anti-touching agent coating unit DEV developing unit EE peripheral exposure unit E-UV excimer UV irradiation unit G Substrate I/F interface station IN PASS loading unit OUT PASS Carry out unit PASS Transfer unit POST-BAKE Post-drying unit PRE-BAKE Pre-drying unit R/S Rotating pedestal RM Coating film SCR Wiping cleaning unit TITLER Printing exposure machine VD Atmospheric pressure Drying unit 10 Coating development processing system 12 External exposure unit 14 匣 box station (C/S) 16 Processing station (P/S) 18 Interface station (I/F) 20 台 pedestal 22 Transport mechanism 22a Transport arm 200931561 1 24 Move in Unit (IN PASS) 26 Cleaning processing unit 28 First heat treatment unit 30 Coating treatment unit 32 Second heat treatment unit 34 First flow conveyance path 36 Excimer UV irradiation unit (E-UV) 38 Abrasive cleaning unit (SCR) 40 Adhesion Unit (AD) ❹42 Cooling Unit (COL) 44 Resin Coating Unit (COT) 46 Atmospheric Drying Unit (VD) 48 Pre-Bake Unit (PRE-BAKE) 50 Cooling Unit (COL) 52 Transfer Unit (PAS S) 54 Developing unit (DEV) 56 Post-drying unit (POST – BAKE) 58 Cooling unit (COL) 60 Inspection unit (AP) ° 62 Carry-out unit (OUT PASS) 64 2nd advection conveying path 66 3rd heat-treating unit 68 Auxiliary Conveying space 70 Shuttle mechanism 72 Conveying device 74 Rotating pedestal (R/S) 76 Peripheral device 80 Coating floating pedestal 82 Substrate conveying mechanism 25 200931561 '84 Resist nozzle 86 Nozzle refining part 88 Injection hole 90A Guide 90B Guide rail 92 Sliding mechanism 94 Nozzle supporting member 96 Post member 98 Pre-filling processing unit 〇100 Nozzle bath 102 Nozzle cleaning mechanism 104 Roller 106 Floating pedestal 106 上 Floating pedestal 106 上 Floating pedestal 108 Roller 110 Floating pedestal (pedestal) 111 Injection hole ο 112 Suction hole ° 114 Positive pressure manifold 116 Negative pressure manifold 118 Refrigerant passage 120 Compressed air supply source 122 Gas supply tube 124 Vacuum source 126 Vacuum tube 128 Cooler unit 128A Cooler unit 128B Cooler unit 26 200931561 , 130 Piping 132 Piping 134 Gas nozzle 134a perforated plate 136 suction port (exhaust port) 138 dry gas supply 140 blower 142 gas supply pipe 144 exhaust section 〇 146 exhaust pipe 150 injection hole 152 suction hole 154 positive pressure manifold 156 negative pressure manifold 158 heating element 160 compressed air source 162 gas supply pipe 164 vacuum source _ 166 vacuum supply pipe ❹(10) Heater power supply 170 Roller 172 Rolling conveyor 174 Heater 176 Rolling conveyor 178 Roller 180 Cooler unit 183 Rolling conveyor 184 Roller 186 Heat release plate 27