200931556 九、發明說明 【發明所屬之技術領域】 本發明係關於使探測器電性接觸於被檢查體之電極 墊,測量該被檢査體之電性特性的技術。 【先前技術】 • 於半導體晶圓(以下,稱爲晶圓)上形成1C晶片之 φ 後’爲了調查1C晶片之電性特性,在晶圓之狀態下藉由 探測裝置執行探測測試。該探測裝置係被構成在可於X、 Y'z方向移動自如並且於Z軸旋轉自如之晶圓夾具(晶 圓載置台)載置晶圓,並且以被設置在晶圓夾具之上方之 探測卡之探測器例如探針和晶圓之1C晶片之電極墊接觸 之方式,控制晶圓夾具之位置。 爲了正確使晶圓上之1C晶片之電極墊和探測器正確 接觸,事先執行被稱爲精密校準之作業,根據其結果,正 φ 確求出1C晶片之電極墊和探測器接觸之時之晶圓夾具之 • 位置,例如以與驅動晶圓夾具之驅動馬達連動之脈衝編碼 . 器所管理之驅動系統之座標位置。而且,針對驅動系統之 座標位置,即使爲於例如移動於X方向之X工作台、移 動於γ方向之γ工作台、移動於Ζ方向之ζ工作台之各 個設置有直線刻度,藉由來自所形成縫隙之光學資訊的脈 衝之計數數量,在該些直線刻度特定各方向之座標的手法 亦可。 爲了執行該精密校準,採用在晶圓夾具和探測卡之間 -5- 200931556 水平移動之移動體上設置視角朝下之晶圓攝影用之攝影 機,並且在晶圓夾具側也設置攝影探針用之攝影機的構成 則爲有利(專利文獻1 )。其係因爲藉由校準該些攝影機 之焦點,並且各攝影晶圓表面及探測器’可以取得與用一 個攝影機攝影兩者相同之結果之故。然後’爲了作成晶圓 上之晶片映射,執行藉由晶圓攝影用之攝影機攝影晶圓周 • 緣之例如4點,求出晶圓之中心位置(晶圓夾具之驅動系 Q 統之座標位置)的作業,和攝影晶圓上之特定點例如彼此 分離的兩個1C晶片之角部份而求出晶圓之方位的作業。 然後,於校準晶圓之方位之後,並且攝影晶圓上之多 數特定點,根據其攝影結果,高精度求出1C晶片之電極 墊和探測器接觸時之晶圓夾具之位置(所謂的接觸位 置)。因執行如此之精密校準,使上述移動體靜止於預先 決定之位置,使晶圓夾具移動而以晶圓攝影用之攝影機循 序攝影晶圓上之各點,但是由於攝影點多,晶圓夾具移動 〇 所需之全體時間變長。再者,由於晶圓夾具之移動範圍 * 廣’探測裝置本身也必須設計成可以對應於該移動範圍之 . 尺寸’因此裝置成爲大型化。尤其,晶圓尺寸日益變大, 可想像今後晶圓尺寸將超過1 2吋,故當增加探測裝置之 設置台數時,則需要寬廣之佔有面積,於無塵室之面積受 到限制時,則無法增加探測裝置之設置台數。 [專利文獻1]日本特開2001-156127號公報 【發明內容】 -6- 200931556 (發明所欲解決之課題) 本發明係鑑於如此之情形下所硏究出者,其目的在於 提供可以謀求裝置之小型化,並且取得高生產率之探測裝 置。 (用以解決課題之手段) * 本發明之探測裝置係將配列有多數被檢査晶片之晶 © 圓,載置在藉由載置台之驅動部而可在水平方向及垂直方 向移動之晶圓載置台,並使上述被檢查晶片之電極墊接觸 於探測卡之探測器,執行被檢查晶片之檢查,其特徵爲: 使用 用以攝影上述探測器之視角朝上之探測器攝影用的攝 影手段,其係被設置在上述晶圓載置台;和 移動體,在上述晶圓載置台及探測卡之間之高度位置 被設置成可在水平方向移動:和 用以攝影晶圓表面之視角朝下之晶圓攝影用之第1攝 • 影手段及第2攝影手段,該等被設置在該移動體,各個其 . 光軸互相間隔開;和 實行步驟群之控制手段,該步驟群含有:藉由移動晶 圓載置台,循序配合探測器攝影用之攝影手段之焦點和晶 圓攝影用之第1攝影手段之焦點及第2攝影手段之焦點之 位置,取得各時點之晶圓載置台之位置的步驟,和藉由使 晶圓載置台移動,依據上述晶圓攝影用之第1攝影手段及 第2攝影手段,循序攝影晶圓載置台上之晶圓,並取得於 200931556 各攝影時之晶圓載置台之位置的步驟,和藉由探測器攝影 用之攝影手段,攝影探測器’取得攝影時之晶圓載置台之 位置的步驟,和根據在各步驟所取得之晶圓載置台之位 置,計算用以使晶圓和探測器接觸之晶圓載置台之位置的 步驟。 再者,具備有被設置在上述移動體’各個其光軸互相 • 間隔開,用以攝影晶圓表面之視角朝下’並且倍率低於第 φ 1攝影手段及第2攝影手段的晶圓攝影用的第1低倍率攝 影機及第2低倍率攝影機。然後,第1攝影手段和第1低 倍率用之攝影機之各光軸之組,和第2攝影手段和第2低 倍率之攝影機之各光軸之組,係被形成左右對稱。 上述步驟群包含藉由晶圓攝影用之第1低倍率攝影機 及第2低倍率攝影機,循序攝影晶圓載置台上之晶圓之邊 緣的兩點,接著,使晶圓載置台正交於互相連結第1低倍 率攝影機及第2低倍率攝影機之各光軸之直線而移動,藉 〇 由第1低倍率攝影機及第2低倍率攝影機循序攝影晶圓中 • 與上述兩點相反側之周緣的兩點,根據該些4點攝影時晶 - 圓載置台之位置,求出晶圚之中心位置的步驟。然後,在 本發明之探測裝置中,藉由晶圓攝影用之第1攝影手段及 第2攝影手段’取代晶圓攝影用之第i低倍率攝影機及第 2低倍率攝影機’來執行攝影晶圓載置台上之晶圓周緣的 兩點及攝影上述相反側之周緣的兩點。 再者’上述步驟群包含藉由晶圓攝影用之第1攝影手 段及第2攝影手段,攝影在晶圓上互相各間隔開之兩個特 -8 - 200931556 定點’根據於各攝影時之晶圓載置台之位置,使晶圓載置 台旋轉成晶圓成爲事先所設定之方向之步驟。再者,晶圓 攝影用之第1攝影手段及第2攝影手段係被設置成藉由攝 影手段用之驅動部而對上述移動體互相連接分離自如。然 後,上述控制部係根據對應於晶圓之類別的資訊,以第1 攝影手段及第2攝影手段之光軸之互相間隔距離成爲晶圓 * 上之兩個特定點之互相間隔距離之方式,輸出對攝影手段 φ 用之驅動部控制之控制訊號。 本發明之探測方法係將配列有多數被檢査晶片之晶 圓,載置在藉由載置台之驅動部而可在水平方向及垂直方 向移動之晶圓載置台,並使上述被檢查晶片之電極墊接觸 於探測卡之探測器,執行被檢查晶片之檢查,其特徵爲: 使用 用以攝影上述探測器之視角朝上之探測器攝影用的攝 影手段,其係被設置在上述晶圓載置台;和 〇 用以攝影晶圓表面之視角朝下之晶圓攝影用之第1攝 * 影手段及第2攝影手段,該等被設置在上述晶圓載置台及 . 探測卡之間的高度位置,可於水平方向移動之移動體上, 各個其光軸互相間隔開,具備有 藉由使晶圓載置台移動,循序校準探測器攝影用之攝 影手段之焦點和晶圓攝影用之第1攝影手段之焦點及第2 攝影手段之焦點之位置,而取得各時點之晶圓載置台之位 置的工程;和 藉由使晶圓載置台移動,依據上述晶圓攝影用之第1 -9 - 200931556 攝影手段及第2攝影手段’循序攝影晶圓載置台上之晶 圓,並取得各攝影時之晶圓載置台之位置的工程和 藉由探測器攝影用之攝影手段攝影探測器,取得攝影 時之晶圓載置台之位置的步驟,和根據在各步驟所取得之 晶圓載置台之位置,計算用以使晶圓和探測器接觸之晶圓 載置台之位置的工程。 • 再者,本發明之探測方法係藉由上述晶圓攝影用之第 φ 1攝影手段及第2攝影手段循序攝影晶圓載置台上之晶圓 的工程,包含藉由晶圓攝影用之第1攝影手段及第2攝影 手段,循序攝影晶圓載置台上之晶圓之邊緣的兩點,接 著,使晶圓載置台正交於互相連結第1攝影手段及第2攝 影手段之各光軸之直線而移動,並藉由第1攝影手段及第 2攝影手段循序攝影晶圓中與上述兩點相反側之周緣的兩 點,根據該些4點攝影時晶圓載置台之位置,求出晶圓之 中心位置的步驟。 Φ 再者,包含藉由上述晶圓攝影用之第1攝影手段及第 * 2攝影手段,攝影在晶圓上互相各間隔開之兩個特定點, . 根據於各攝影時之晶圓載置台之位置,使晶圓載置台旋轉 成晶圓成爲事先所設定之方向之工程。包含根據對應於晶 圓之類別的資訊,以晶圓攝影用之第1攝影手段及第2攝 影手段之光軸之互相間隔距離成爲晶圓上之兩個特定點之 互相間隔距離之方式,藉由攝影手段用之驅動部調整第1 攝影手段及第2攝影手段之位置的工程。 本發明之記億媒體係存儲有探測裝置所使用之電腦程 -10- 200931556 式,該探測裝置係將配列有多數被檢查晶片之晶圓,載置 在藉由載置台之驅動部而可在水平方向及垂直方向移動之 晶圓載置台,並使上述被檢查晶片之電極墊接觸於探測卡 之探測器,執行被檢查晶片之檢查,其特徵爲: 上述電腦程式係以實施上述各探測方法之方式組成步 驟群。 φ [發明效果] 本發明因在晶圓載置台及探測卡之間的高度位置可於 水平方向移動之移動體,設置有各個其光軸互相間隔開, 用以攝影晶圓表面之視角朝下之晶圓攝影用之第1攝影段 及第2攝影手段2,故爲了取得晶圓之位置資訊,於攝影 晶圓時,晶圓載置台之移動量較少即可。因此,因可以謀 求裝置之小型化,再者也可以縮短取得晶圓之位置資訊所 需之時間,故可以有助於高生產率化。並且,若互相連接 ❹ 分離自如地設置晶圓攝影用之第1攝影手段及第2攝影手 • 段時,因其間隔距離可以調整成晶圓上之兩個特定點之互 . 相間隔距離,故若使晶圓載置台移動至攝影一個特定點 時,則可以使晶圓載置台靜止,直接執行攝影其他一個特 定點,並且有助於成爲更高生產率化。 【實施方式】 本發明之第1實施型態的探測裝置係如第1圖至第3 圖所示般,具備有執行配列有多數被檢查晶片之基板即晶 -11 - 200931556 圓w之交接的裝載部1,和對晶圓w執行探測之探測裝 置本體2。首先,針對裝載部1及探測裝置本體2之全體 設計配置予以簡單說明。 裝載部1具備有各搬入屬於收納多數片之晶圓W之 搬運容器的第1載體C1及第2載體C2的第1裝載埠11 及第2裝載埠12,和被配置在該等裝載埠11、12之間之 • 搬運室1〇。在第1裝載埠11及第2裝載埠12,設置有第 〇 1載置台13及第2載置台14’該些在Y方向互相間隔開 被配置’以第1載體C1及第2載體C2之交接口(前面之 開口部)互相對向之方式,各載置該些載體Cl、C2。再 者,在上述搬運室10設置有藉由屬於基板保持構件之機 械臂30執行晶圓W之搬運的晶圓搬運機構(基板搬運機 構)3。 探測裝置本體2係具備有裝載部1,和以並列於X方 向之方式鄰接於該裝載部1而被配置,構成探測裝置本體 〇 2之外裝部份的筐體22。該筐體22經間隔壁20在Y方向 • 分割爲2,一方之分割部分及另一方之分割部分相當於各 . 區劃形成第1檢査部21A及第2檢査部21B之外裝體。第BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a technique for electrically contacting a probe to an electrode pad of a test object and measuring electrical characteristics of the test object. [Prior Art] • In order to investigate the electrical characteristics of the 1C wafer on a semiconductor wafer (hereinafter referred to as a wafer), in order to investigate the electrical characteristics of the 1C wafer, the detection test is performed by the detecting device in the state of the wafer. The detecting device is configured to mount a wafer on a wafer holder (wafer mounting table) that is freely movable in the X, Y'z direction and freely rotatable on the Z axis, and is provided with a probe card disposed above the wafer holder The position of the wafer holder is controlled by means of a probe such as a probe and an electrode pad of the 1C wafer of the wafer. In order to properly contact the electrode pads and detectors of the 1C wafer on the wafer, an operation called precision calibration is performed in advance, and according to the result, positive φ is determined to determine the crystal of the electrode pad of the 1C wafer and the detector. The position of the circular fixture, for example, the coordinate position of the drive system managed by the pulse code associated with the drive motor that drives the wafer holder. Further, for the coordinate position of the drive system, even if it is, for example, an X table moving in the X direction, a γ table moving in the γ direction, and a ζ table moving in the Ζ direction, a linear scale is provided, The number of pulses of the optical information forming the slit, and the coordinates of the specific directions in the respective linear scales may also be used. In order to perform the precision calibration, a camera for viewing a wafer with a downward viewing angle is disposed on a moving body that moves horizontally between the wafer holder and the probe card, and a photo probe is also disposed on the wafer holder side. The configuration of the camera is advantageous (Patent Document 1). This is because by calibrating the focus of the cameras, and the photographic wafer surface and detectors can achieve the same results as with one camera. Then, in order to create a wafer map on the wafer, the wafer is photographed by the camera for wafer photography. For example, four points are obtained, and the center position of the wafer (the coordinate position of the driving system of the wafer holder) is obtained. The operation of determining the orientation of the wafer is performed on a specific portion of the photographic wafer, for example, a corner portion of two 1C wafers separated from each other. Then, after aligning the orientation of the wafer, and photographing a plurality of specific points on the wafer, according to the result of the photographing, the position of the wafer holder of the 1C wafer and the position of the wafer holder when the detector is in contact (the so-called contact position) is obtained with high precision. ). By performing such a precise calibration, the moving body is stationary at a predetermined position, the wafer jig is moved, and each point on the wafer is sequentially photographed by a camera for wafer photography, but the wafer jig is moved due to a large number of photographing points. The total time required for 变 becomes longer. Furthermore, since the moving range of the wafer jig is wide, the detecting device itself must be designed to correspond to the moving range. Therefore, the device is enlarged. In particular, the wafer size is becoming larger and larger, and it is conceivable that the wafer size will exceed 12 今后 in the future. Therefore, when the number of detector devices is increased, a wide area is required, and when the area of the clean room is limited, It is not possible to increase the number of sets of detection devices. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2001-156127 [Draft of the Invention] -6-200931556 (Problems to be Solved by the Invention) The present invention has been made in view of such circumstances, and an object thereof is to provide a device It is miniaturized and has a high productivity detection device. (Means for Solving the Problem) * The detecting device of the present invention is a wafer mounting table in which a plurality of wafers to be inspected are arranged and placed in a horizontal direction and a vertical direction by a driving portion of the mounting table. And the electrode pad of the inspected wafer is in contact with the detector of the probe card, and the inspection of the inspected wafer is performed, and the photographing means for photographing the detector with the viewing angle of the detector for detecting the detector is used. Is disposed on the wafer mounting table; and the moving body is disposed at a height position between the wafer mounting table and the probe card to be movable in a horizontal direction: and a wafer with a downward viewing angle for photographing the surface of the wafer The first photo-shadowing means and the second photographing means are disposed on the moving body, and the optical axes thereof are spaced apart from each other; and the control means for performing the step group includes: moving the wafer Set the stage, the focus of the photographic means for detector photography, the focus of the first photographic means for wafer photography, and the focus of the second photographic means. a step of positioning the wafer mounting table, and moving the wafer mounting table to sequentially scan the wafer on the wafer mounting table according to the first imaging means and the second imaging means for wafer imaging, and obtain the photography in 200931556 The step of the position of the wafer stage, and the photographing means for the photographing of the detector, the step of taking the position of the wafer stage at the time of photographing, and the position of the wafer stage obtained in each step The step of calculating the position of the wafer stage for contacting the wafer with the detector. Further, there is provided a wafer photographing provided in the moving body 'each of which has an optical axis spaced apart from each other for photographing the wafer surface, and the magnification is lower than the φ 1 photographic means and the second photographic means The first low magnification camera and the second low magnification camera used. Then, the group of the optical axes of the first imaging means and the camera for the first low magnification, and the group of the optical axes of the second imaging means and the camera of the second low magnification are formed to be bilaterally symmetrical. The step group includes the first low-magnification camera and the second low-magnification camera for wafer photography, and sequentially photographs two points on the edge of the wafer on the wafer mounting table, and then the wafer mounting table is orthogonal to each other. (1) The optical axes of the low-magnification camera and the second low-magnification camera move linearly, and the first low-magnification camera and the second low-magnification camera sequentially scan the wafer. • Two points on the opposite side of the two points The step of determining the center position of the wafer based on the positions of the crystal-circle mounting stages at the four-point shooting. Then, in the detecting device of the present invention, the first imaging means for wafer photography and the second imaging means 'replace the i-th low-magnification camera and the second low-magnification camera for wafer imaging' to perform the imaging wafer loading Two points on the periphery of the wafer on the stage and two points on the periphery of the opposite side of the photograph. Furthermore, the above-mentioned step group includes the first imaging means and the second imaging means for wafer photography, and the two images are spaced apart from each other on the wafer. - ??? The position of the circular stage is such that the wafer stage is rotated into a wafer in a previously set direction. Further, the first imaging means and the second imaging means for wafer photography are provided such that the moving bodies are connected to each other by a driving unit for the imaging means. Then, the control unit is configured such that the distance between the optical axes of the first imaging means and the second imaging means is a distance between two specific points on the wafer* based on the information corresponding to the type of the wafer. A control signal for controlling the driving unit for the photographing means φ is output. In the detection method of the present invention, a wafer in which a plurality of wafers to be inspected are arranged is placed on a wafer mounting table that can be moved in the horizontal direction and the vertical direction by a driving portion of the mounting table, and the electrode pads of the wafer to be inspected are placed. Contacting the probe of the probe card to perform inspection of the wafer to be inspected, characterized in that: a photographing means for photographing the detector with the viewing angle of the detector for photographing upward is used, which is disposed on the wafer mounting table; The first photographing means and the second photographing means for photographing the wafer surface with the viewing angle facing downward, which are disposed at a height position between the wafer mounting table and the probe card, In the moving body moving in the horizontal direction, each of the optical axes is spaced apart from each other, and the focus of the photographing means for photographing the detectors and the focus of the first photographing means for wafer photographing are sequentially performed by moving the wafer mounting table. The position of the focus of the second photographic means, the acquisition of the position of the wafer stage at each time point; and the movement of the wafer stage by the wafer photography 1 -9 - 200931556 The means of photography and the second means of photography 'sequentially photographing the wafers on the wafer, obtaining the position of the wafer stage at the time of photography, and the photographic detectors for the photographic means for detector photography. The step of obtaining the position of the wafer stage at the time of photographing, and the calculation of the position of the wafer stage for bringing the wafer and the probe into contact based on the position of the wafer stage obtained at each step. Further, the detection method of the present invention is a process of sequentially scanning a wafer on a wafer mounting table by the φ 1 imaging means and the second imaging means for wafer imaging, including the first use of wafer photography. The photographing means and the second photographing means sequentially photographing two points on the edge of the wafer on the wafer mounting stage, and then, the wafer mounting stage is orthogonal to a line connecting the optical axes of the first imaging means and the second imaging means to each other. Moving, and sequentially scanning the two points on the opposite side of the two sides of the wafer by the first photographing means and the second photographing means, and determining the center of the wafer based on the positions of the wafer mounts during the four-point photographing The steps of the location. Φ Furthermore, the first imaging means for the wafer photography and the second imaging means are used to capture two specific points spaced apart from each other on the wafer, according to the wafer mounting stage at each shooting. The position is such that the wafer stage is rotated into a wafer to be in a previously set direction. According to the information corresponding to the type of the wafer, the distance between the first imaging means for the wafer photography and the optical axis of the second imaging means is such that the distance between the two specific points on the wafer is different from each other. The project of adjusting the position of the first photographing means and the second photographing means by the driving unit for the photographing means. The Kee Media Co., Ltd. of the present invention stores a computer program -10-200931556 for use in a detecting device, which is mounted on a wafer on which a plurality of wafers to be inspected are placed, and is placed on a driving portion of the mounting table. a wafer mounting table that moves in the horizontal direction and the vertical direction, and the electrode pad of the inspected wafer is in contact with the detector of the probe card, and performs inspection of the inspected wafer, wherein the computer program is configured to implement the above-mentioned detection methods. The way to form a group of steps. φ [Effect of the Invention] The present invention is characterized in that the moving bodies which are horizontally movable at a height position between the wafer mounting table and the probe card are provided with respective optical axes spaced apart from each other for viewing the surface of the wafer downward. Since the first imaging section and the second imaging means 2 for wafer imaging are used, in order to obtain the positional information of the wafer, the amount of movement of the wafer mounting table may be small when the wafer is photographed. Therefore, since it is possible to reduce the size of the device, it is also possible to shorten the time required to acquire the position information of the wafer, which contributes to high productivity. Further, when the first imaging means and the second imaging hand segment for wafer imaging are separately and arbitrarily connected, the separation distance can be adjusted to the mutual distance between two specific points on the wafer. Therefore, when the wafer stage is moved to a specific point of photographing, the wafer stage can be made to stand still, and another specific point of photographing can be directly performed, which contributes to higher productivity. [Embodiment] The probe device according to the first embodiment of the present invention is provided with a transfer of a crystal 11 - 200931556 circle w which is a substrate on which a plurality of wafers to be inspected are arranged, as shown in Figs. 1 to 3 . The loading unit 1 and the detecting device body 2 that perform detection on the wafer w. First, the overall design and arrangement of the loading unit 1 and the probe unit 2 will be briefly described. The loading unit 1 includes the first loading cassette 11 and the second loading cassette 12 that carry the first carrier C1 and the second carrier C2 that are transporting the wafer W that accommodates a plurality of wafers, and are disposed in the loading cassette 11 Between 12 and 12 • Carrying room 1〇. In the first loading cassette 11 and the second loading cassette 12, the first mounting stage 13 and the second mounting stage 14' are disposed so as to be spaced apart from each other in the Y direction. The first carrier C1 and the second carrier C2 are disposed. The carriers C1 and C2 are placed on the interface (front opening) in such a manner as to face each other. Further, in the transfer chamber 10, a wafer transfer mechanism (substrate transfer mechanism) 3 for transporting the wafer W by the mechanical arm 30 belonging to the substrate holding member is provided. The probe device main body 2 includes a mounting portion 1 and a housing 22 that is disposed adjacent to the loading portion 1 so as to be aligned in the X direction, and constitutes a housing portion of the probe device main body 〇 2 . The casing 22 is divided into two in the Y direction by the partition wall 20, and one divided portion and the other divided portion correspond to each other. The first inspection portion 21A and the second inspection portion 21B are formed separately. First
1檢査部21A具備有屬於基板載置台之晶圓夾具4A,和 構成具備有攝影機之攝影單元之移動體的對齊橋接條 5A,該移動體係在該晶圓夾具4A之上方區域於Y方向移 動(連結裝載部11、12之方向),和被設置在構成筐體 22之頂棚部之頂板201的探測卡6A。即使針對第2檢查 部21B也構成相同,具備有晶圓夾具4B、對齊橋接條5B -12- 200931556 及探針卡6B。 接著’關於裝載部1予以詳細敘述。第丨裝載埠n 及第2裝載埠12因互相對稱並且構成相同,故以第4圖 作爲代表表示第1裝載埠11之構造。裝載部i係如第3 圖及第4圖所示般,藉由間隔壁20a自上述搬運室1〇分 . 隔,在該間隔壁20a ’設置有快門S和用以一體性開關與 • 該快門S和第1載體C1之交接口之開關機構20b。再 〇 者,第1載置台13係藉由被設置在第1載置台13之下方 側之無圖式的旋轉機構’構成可以各90度順時鐘旋轉及 逆時鐘旋轉。 即是,該第1載置台1 3係被構成從例如探測裝置之 正面側(圖中之X方向右側)’被稱爲FOUP之密閉型之 載體C1係將前面之開口部朝向探測裝置側(X方向左 側),藉由無麈室內之無圖式之自動搬運車(AGV )被載 置在第1載置台13時’該第1載置台13順時鐘方向90 〇 度旋轉,使開口部與上述快門S相對向’再者於將第1載 * 體C1自第1載置台13搬出時’則使第1載體C1朝反時 . 鐘方向90度旋轉。 第1載體C1和晶圓搬運機構3之間的晶圓w之交 接,係藉由使第1載體c 1之開口部與快門S側相向對 向,依據先前所述之開關機構20b 一體性開放快門s和第 1載體ci之交接口’使搬運室和第1載體ci內連 通,而使晶圓搬運機構3對第1載體C1進退而執行。 晶圓搬運機構3具有搬運基台35、使該搬運基台35 -13- 200931556 繞垂直軸旋轉之旋轉軸3a、使該旋轉軸3a升降之無圖式 之升降機構,並且在搬運基台35進退自如地設置有3片 機械臂30,各個機械臂30互相獨立進退,具有執行晶圓 W搬運之作用。旋轉軸3a之旋轉中心係被設置在第1載 體C1和第2載體C2之中間,即是自第1載體C1及第2 載體C2等距離位置。再者,晶圓搬運機構3係可以在第 • 1載體C1或是第2載體C2之間用以交接晶圓W之上位 0 置,和在第1檢查部21A或是第2檢查部21B之間用以交 接晶圓W之下位置之間升降。 再者,晶圓搬運機構3具備有用以執行晶圓W之預 校準之預校準機構39。該預校準機構39具備有貫通搬運 基台35內升降並且旋轉自如之軸部36a,和被設置在該軸 部之頂部,平時嵌合於搬運基台35之表面之凹部而與該 表面成爲相同面之旋轉工作台的夾具部36。該夾具部36 係被設定在對應於位在途中退縮狀態之機械臂30上之晶 φ 圓W的中心位置上,構成自其機械臂30僅些許抬起各段 之機械臂30上之晶圓W而予以旋轉。 . 再者,預校準機構39具備有檢測出在夾具部36旋轉 之晶圓W之周緣的由發光感測器及受光感測器所構成的 檢測部之光感測器3 7、3 8。該光感測器3 7、3 8在自機械 臂30之移動區域橫向偏移之位置經搬運基台35被固定, 在該例中,因將成爲預校準之對象之晶圓W當作下段機 械臂33上之晶圓W及中段機械臂32上之晶圓W,故在 藉由夾具部36抬起之各晶圓W之周緣之上下,並且於晶 -14- 200931556 圓w之存取時,被設定成不干擾晶圓W之高 且,雖然無圖式,但是在裝載部1,設置有根 測器3 7、3 8之檢測訊號,檢測出晶圓W之晶 定向平面等之方向基準部和晶圓W之中心位 檢測結果,使夾具部36旋轉成凹口等朝向特 制器。 針對依據由光檢測器3 7、3 8和夾具部3 6 校準機構39調整晶圓W之方位(預校準)’ 械臂3 3上之晶圓W爲例,以下簡單說明。首 具部36僅使下段機械臂33上之晶圓W些許 圓W旋轉,並且自光檢測器3 8之發光部經含= 周緣部(端部)之區域,使光照射至受光部。 圓W之方位在下段機械臂33上成爲特定方位 夾具部36停止,並使夾具部36下降,藉由在 3 3上交接晶圓W,調整晶圓W之方位。之後 第1檢查部21A之晶圓夾具4A載置晶圓W之 正晶圓W之偏心之方式,調整晶圓搬運機構 如此一來,執行晶圓之方位及偏心。並且’在: 省略該光感測器37、38之圖式。 接著,針對探測裝置本體2予以詳細敘述 裝置本體2之筐體22中,於裝載部1側之側 第1檢査部21A和第2檢査部21B之間交接 □有延伸於橫方向(γ方向)之帶狀之搬運 且,該些第1檢查部21A和第2檢査部21B因 度位準。並 據來自光感 圓之凹口或 置,根據其 定方向之控 所構成之預 舉出下段機 先,藉由夾 抬起,使晶 有晶圓W之 然後,以晶 之方式,使 下段機械臂 ,當在例如 時,則以修 3之位置。 第3圖中, 。在該探測 壁,爲了在 晶圓W,開 口 22a 。並 通過晶圓搬 -15- 200931556 運機構3之旋轉中心,對於正交於連結第1裝載埠11和 第2裝載埠12之直線的水平線HL,各個晶圓W之交接位 置、晶圓W表面之攝影位置及探測卡6A之設置位置成爲 左右對稱,並且成爲相同構成,故爲了避免重複說明,針 對第1檢查部21A,參照第3圖、第6圖及第7圖予以說 明。The inspection unit 21A includes a wafer holder 4A belonging to the substrate stage, and an alignment bridge 5A constituting a moving body including a camera unit, and the movement system moves in the Y direction above the wafer holder 4A ( The direction in which the loading portions 11 and 12 are connected, and the probe card 6A provided on the top plate 201 constituting the ceiling portion of the casing 22 are provided. The second inspection unit 21B has the same configuration, and includes the wafer holder 4B, the alignment bridges 5B-12-200931556, and the probe card 6B. Next, the loading unit 1 will be described in detail. Since the second load 埠n and the second load 埠12 are symmetrical to each other and have the same configuration, the structure of the first load cassette 11 is represented by a fourth diagram. The loading unit i is divided from the transfer chamber 1 by the partition wall 20a as shown in Figs. 3 and 4, and is provided with a shutter S and an integral switch and the partition wall 20a'. A switching mechanism 20b that interfaces the shutter S and the first carrier C1. Further, the first mounting table 13 is configured to be clockwise and counterclockwise rotated by 90 degrees by a non-drawing rotating mechanism ‘ provided on the lower side of the first mounting table 13. In other words, the first mounting table 13 is configured such that, for example, the sealed type carrier C1 called the FOUP from the front side (the right side in the X direction in the drawing) of the detecting device, the front opening portion faces the detecting device side ( When the automatic transfer vehicle (AGV) in the interior of the X-ray is placed on the first mounting table 13, the first mounting table 13 is rotated 90 degrees clockwise to open the opening portion. When the shutter S is relatively "when the first carrier C1 is carried out from the first stage 13", the first carrier C1 is rotated by 90 degrees in the clockwise direction. The transfer of the wafer w between the first carrier C1 and the wafer transfer mechanism 3 is performed by the opening of the first carrier c 1 facing the shutter S side, and is integrally opened in accordance with the switch mechanism 20b described above. The interface s between the shutter s and the first carrier ci communicates with the inside of the first carrier ci, and the wafer transport mechanism 3 advances and retracts the first carrier C1. The wafer conveyance mechanism 3 has a conveyance base 35, a rotation shaft 3a that rotates the conveyance bases 35 -13 - 200931556 about a vertical axis, and an unillustrated lifting mechanism that raises and lowers the rotation shaft 3a, and the conveyance base 35 Three robot arms 30 are provided in advance and retreat, and each of the robot arms 30 advances and retracts independently of each other, and has the function of performing wafer W transport. The center of rotation of the rotating shaft 3a is provided between the first carrier C1 and the second carrier C2, that is, at a distance from the first carrier C1 and the second carrier C2. Further, the wafer transfer mechanism 3 can transfer the upper side of the wafer W between the first carrier C1 or the second carrier C2, and the first inspection portion 21A or the second inspection portion 21B. It is used to transfer between the positions below the wafer W. Further, the wafer transfer mechanism 3 is provided with a pre-calibration mechanism 39 for performing pre-calibration of the wafer W. The pre-alignment mechanism 39 includes a shaft portion 36a that is slidable and slidable in the through-transporting base 35, and a recess that is provided on the top of the shaft portion and that is normally fitted to the surface of the transport base 35, and is identical to the surface. The surface of the table is rotated by the clamp portion 36. The clamp portion 36 is set at a center position corresponding to the crystal φ circle W on the robot arm 30 in the retracted state on the way, and constitutes a wafer on the robot arm 30 from which only a few segments of the robot arm 30 are lifted. W rotates. Further, the pre-alignment mechanism 39 is provided with photo sensors 37 and 38 for detecting a detecting portion including a light-emitting sensor and a light-receiving sensor on the periphery of the wafer W which is rotated by the chuck portion 36. The photo sensors 3 7 and 38 are fixed by the transfer base 35 at a position laterally offset from the moving region of the robot arm 30. In this example, the wafer W to be pre-calibrated is regarded as the lower stage. The wafer W on the robot arm 33 and the wafer W on the middle arm 32 are placed above the periphery of each wafer W lifted by the clamp portion 36, and accessed at the crystal-14-200931556 circle w In the case where the height of the wafer W is not disturbed, although there is no pattern, the detection unit 1 is provided with the detection signals of the root detectors 3 7 and 38, and the crystal orientation plane of the wafer W is detected. As a result of detecting the center position of the direction reference portion and the wafer W, the clamp portion 36 is rotated into a notch or the like toward the special device. The wafer W on the arm (3) of the orientation (pre-calibration) of the wafer W is adjusted by the photodetector 3 7 and 38 and the chuck portion 36 calibration mechanism 39 as an example, and will be briefly described below. The head portion 36 rotates only the wafer W on the lower arm 33 by a slight circle W, and the light from the light-emitting portion of the photodetector 38 is irradiated to the light-receiving portion via the region including the peripheral portion (end portion). The orientation of the circle W is in a specific orientation on the lower arm 33. The clamp portion 36 is stopped, the clamp portion 36 is lowered, and the wafer W is transferred to the wafer 3 to adjust the orientation of the wafer W. Thereafter, the wafer holder 4A of the first inspection unit 21A mounts the eccentricity of the positive wafer W of the wafer W, and adjusts the wafer transfer mechanism to perform the orientation and eccentricity of the wafer. And ': the pattern of the photo sensors 37, 38 is omitted. Next, in the casing 22 of the apparatus main body 2, the first inspection unit 21A and the second inspection unit 21B on the side of the loading unit 1 are disposed to extend in the lateral direction (γ direction). In the case of the belt, the first inspection unit 21A and the second inspection unit 21B are leveled. And according to the notch or the position of the light-sensing circle, according to the control of the direction, the lower part of the machine is pre-existed, and the wafer is lifted by the clamp to make the wafer W, and then the lower part is made by crystal The robot arm, when in the case of, for example, repairs the position of 3. In Figure 3, . In the detection wall, in order to open the port 22a in the wafer W. And through the rotation center of the wafer transfer -15-200931556, the intersection position of each wafer W, the surface of the wafer W for the horizontal line HL orthogonal to the line connecting the first loading port 11 and the second loading port 12 The photographing position and the installation position of the probe card 6A are bilaterally symmetrical and have the same configuration. Therefore, in order to avoid redundant description, the first inspection unit 21A will be described with reference to FIGS. 3, 6 and 7.
• 檢查部21A具備有基台23,在該基台23上,由下依 0 照沿著延伸於Y方向之導軌,例如滾珠螺桿等被驅動於Y 方向之Y工作台24,和沿著延伸於X方向之導軌,藉由 例如滾珠螺桿而被驅動於X方向之X工作台25。在該X 工作台25和Y工作台24,各設置有組合編碼器之馬達, 但是在此予以省略。 在X工作台25上設置有藉由組合編碼器之無圖式之 馬達,被驅動於Z方向之Z移動部26,在該Z移動部 26,設置有繞著Z軸旋轉自如之(在0方向移動自如)之 ❾ 基板載置台之晶圓夾具4A。因此,該晶圓夾具4A可以在 • X、Y、Z、0方向移動。X平台25、X平台24及Z移動 . 部26構成驅動部,構成可以在用以在與晶圓搬運機構3 之間執行晶圓W之交接的交接位置,和如後述般晶圓W 表面之攝影位置,和接觸於探測卡6A之探針29之接觸位 置(檢查位置)之間,驅動晶圓夾具4A。 在晶圓夾具4A之移動區域之上方,對頂板201裝卸 自如地安裝有探測卡6A。在探測卡6A之上面側’形成電 極群,爲了在該電極群與無圖式之測試頭之間取得電性導 16- 200931556 通’在探測卡6A之上方,以對應於探測卡6A之電極群 之配置位置之方式,設置有下面形成多數電極部之彈簧針 28a的彈簧針單元28。在該彈簧針單元28之上面,通常 置有無圖式之測試頭,但是在該例中,測試頭係被配置在 與探測裝置本體2不同之位置,彈簧針單元28和測試頭 係以無圖式之纜線連接。 • 再者,在探測卡6A之下面側,對應於晶圓W之電極 〇 墊之配列,於例如探測卡6A之全面,設置有各電性連接 於上面側之電極群之探測器,例如對晶圓W表面垂直延 伸之垂直針(線材探針)。作爲探針即使爲由對晶圓W 表面傾斜延伸於下方之金屬線所構成之探針29,或形成於 撓性薄膜之金屬凸塊電極等亦可。探測卡6A在該例中, 構成可以一次接觸於晶圓W表面之被檢査晶片(1C晶 片)之所有電極墊,因此以一次之接觸完成電性特性之測 定。 〇 在先前所述之z移動部26中之晶圓夾具4A之間隔壁 • 20側中之側方位置,經固定板4 1 a固定探針攝影用之攝影 . 手段之視角朝上之微型攝影機41。該微型攝影機41係構 成放大探針29之針頭或探測卡6A之校準標記而予以攝 影,以當作包含CCD攝影機之高倍率攝影機。該微型攝 影機41位於晶圓夾具4A中之X方向之大槪中間點。再 者,微型攝影機41爲了於校準時調查探針29之配列之方 位及位置,攝影特定之探針29例如X方向之兩端之探針 29及Y方向之兩端探針29,再者爲了定期性觀察各探針 -17- 200931556 29之狀態,持有如循序攝影所有探針29之作用。 再者,在固定板4la上,固定有連接於微型攝影機 41,用以在寬廣區域攝影探針29之配列之低倍率之攝影 機的微型攝影機42。並且,於固定板41a設置有標靶 44,使可以藉由進退機構43在相對於微型攝影機41之對 焦面與光軸交叉之方向上進退。該標靶44係藉由微型攝 影機41及後述之微型攝影機71、72構成可以畫像辨識, 在例如透明玻璃板,蒸鍍定位用之被照體的圓形金屬膜例 如直徑140微米之金屬膜。第7圖(a) 、(b)爲槪略表 示晶圓夾具4A和微型攝影機41及微型攝影機42之位置 關係之平面圖及側面圖。並且,在第7圖中,省略先前所 述之標靶44或進退機構43之圖式。 在晶圓夾具4A和探測卡6A之間之區域的筐體22之 內壁面之X方向之兩側(前側和後側),沿著Y方向設 置有導軌47。沿著該導軌47,如第8圖所示般,在後述 標準位置及攝影位置之間設置有可在Y方向移動自如之攝 影單元的對齊橋接條5A。 在以下之說明中,爲了方便說明將X方向(參照第2 圖)稱爲左右方向。在對齊橋接條5A’如第9圖所示般 相對於將該當橋接條5A左右兩等分之中心線70對稱地設 置有第1微型攝影機71及第2微型攝影機72,並且相對 於上述線70對稱地設置有第1微距攝影機81和第2微距 攝影機82。第1微型攝影機71及第2微型攝影機72各相 當於第1攝影手段及第2攝影手段。第1微距攝影機81 -18- 200931556 及第2微距攝影機82各相當於第1低倍率攝影機及第2 低倍率攝影機。 該些攝影機中之任一者的視角皆朝下。在此,微型攝 影機Micro Camera (或微距離攝影機Macro Camera)係 如後述第16圖所示般,由含有攝影機本體71a( 72a)及 鏡71b( 72b)之光學系統所構成,但是在本發明中,技術 • 性爲重要之點係由於位於自對齊橋接條5A之下面延伸至 © 下方之光軸,故如微型攝影機(或微距攝影機)般之用語 在於應方便說明之事項中,係指形成在對齊橋接條5A之 下面之攝影用之窗部份之情形,和指包含攝影機本體及鏡 之光學系統之情形。在第9圖中,稱爲微型攝影機(或是 微距攝影機)之小圓形部份係表示攝影用之窗部份,即使 相同之後述圖示也相同。 然後,設置有微型攝影機(Micro Camera ) 71、72 (或是微距攝影機(Macro Camera ) 81、82 ),係指設置 〇 兩台微型攝影機,各個攝影畫像在後述控制部處理畫像。 ‘ 微型攝影機71、72若在第2圖表示時,則位於較微距攝 . 影機81、82靠近第1檢查部21A及第2檢査部21B之境 界的水平線HL側。再者,晶圓尺寸(晶圓直徑)爲 3 00mm之時,微型攝影機Ή、72和中心線70之距離1例 如爲73mm,微距攝影機81、82和中心線70之距離Γ例 如爲45mm。並且,關於攝影機表示與其他部位之距離 時,則將攝影機的光軸設爲測量點。例如微型攝影機7 1、 72和中心線70之距離1係指微型攝影機7 1、72之各光軸 -19- 200931556 和中心線70之距離1之意。 再者’微型攝影機71、72係以可以放大攝影晶圓W 表面之方式,構成含有CCD攝影機之高倍率的攝影機, 微距攝影機81、82係以可以寬廣視角攝影晶圓W之方 式,構成低倍率之攝影機。 上述對齊橋接條5A之停止位置之標準位置係在晶圓 • 夾具4A和晶圓搬運機構3之間執行晶圓W之交接時,晶 〇 圓W接觸於探測卡6A時及藉由上述第1攝影手段(微型 攝影機(Micro Camera) 41)執行探針29之攝影時,退 避至對齊橋接條5A不干擾晶圓夾具4A或晶圓搬運機構3 之位置。再者,上述攝影位置爲藉由對齊橋接條5A之微 型攝影機71、72及微距攝影機81、82攝影晶圓W之表 面時之位置。藉由該微型攝影機71、72及微距攝影機 81、82攝影晶圓W之表面,係藉由在攝影位置固定對齊 橋接條5A,使晶圓夾具4A移動而執行。 ❹ 然後,該攝影位置也如第10圖之下側所示般,較探 • 測卡6A之中心位置偏移至Y軸方向之後面側(探測裝置 . 本體2之中心側)。其理由,如同下述般。如先前所述• The inspection unit 21A is provided with a base 23 on which the Y stage 24 that is driven in the Y direction, such as a ball screw, is extended along the guide rail extending in the Y direction, and extends along the base 23 The guide rail in the X direction is driven by the X table 25 in the X direction by, for example, a ball screw. A motor in which the encoder is combined is provided in each of the X table 25 and the Y table 24, but is omitted here. The X table 25 is provided with a motor having a combination of encoders and is driven by a Z moving portion 26 in the Z direction, and the Z moving portion 26 is provided to be rotatable about the Z axis (at 0). The direction moves freely.) The wafer holder 4A of the substrate stage. Therefore, the wafer holder 4A can be moved in the X, Y, Z, and 0 directions. The X platform 25, the X platform 24, and the Z moving unit 26 constitute a driving portion that constitutes a transfer position for performing transfer of the wafer W with the wafer transfer mechanism 3, and a surface of the wafer W as will be described later. The wafer holder 4A is driven between the photographing position and the contact position (inspection position) of the probe 29 contacting the probe card 6A. A probe card 6A is detachably attached to the top plate 201 above the moving area of the wafer holder 4A. Forming an electrode group on the upper side of the probe card 6A, in order to obtain an electrical guide between the electrode group and the test head without a pattern, the test electrode 6A is placed above the probe card 6A to correspond to the electrode of the probe card 6A. The pogo pin unit 28 in which the plurality of electrode portions 28a are formed below is provided in such a manner that the group is disposed. Above the pogo pin unit 28, a test head without a pattern is usually placed, but in this example, the test head is disposed at a different position from the probe body 2, and the pogo pin unit 28 and the test head are not shown. Cable connection. Further, on the lower side of the probe card 6A, corresponding to the arrangement of the electrode pads of the wafer W, for example, the detector card 6A is provided with a detector electrically connected to the electrode group on the upper side, for example, A vertical needle (wire probe) with a vertical extension of the surface of the wafer W. The probe may be a probe 29 composed of a metal wire extending obliquely to the surface of the wafer W, or a metal bump electrode formed of a flexible film. In this example, the probe card 6A constitutes all of the electrode pads of the wafer to be inspected (1C wafer) which can be in contact with the surface of the wafer W at one time, so that the measurement of the electrical characteristics is completed by one contact. 〇In the side position of the partition wall • 20 side of the wafer holder 4A in the z moving unit 26 described above, the photography for the probe photography is fixed via the fixing plate 4 1 a. The micro-camera with the viewing angle of the means upwards 41. The micro camera 41 is configured to magnify the needle of the probe 29 or the calibration mark of the probe card 6A to be photographed as a high magnification camera including a CCD camera. The micro-camera 41 is located at a midpoint of the X-direction in the wafer holder 4A. Further, in order to investigate the orientation and position of the arrangement of the probes 29 during the calibration, the micro-camera 41 photographs the specific probe 29 such as the probe 29 at both ends in the X direction and the probe 29 at both ends in the Y direction, and further Periodically observe the status of each probe-17-200931556 29, and hold all the probes 29 as a sequential photograph. Further, on the fixed plate 4a, a micro camera 42 connected to the micro camera 41 for photographing the low magnification camera of the probe 29 in a wide area is fixed. Further, a target 44 is provided on the fixed plate 41a so that the advancing and retracting mechanism 43 can advance and retreat in a direction intersecting the optical axis with respect to the focal plane of the micro camera 41. The target 44 is configured to be image-recognizable by the micro-camera 41 and the micro-cameras 71 and 72 to be described later. For example, a transparent metal plate is used to vapor-deposit a circular metal film of the object for positioning, for example, a metal film having a diameter of 140 μm. Fig. 7 (a) and (b) are plan views and side views showing the positional relationship between the wafer holder 4A, the micro camera 41, and the micro camera 42 in a schematic manner. Further, in Fig. 7, the drawings of the target 44 or the advancing and retracting mechanism 43 described above are omitted. On both sides (front side and rear side) in the X direction of the inner wall surface of the casing 22 in the region between the wafer jig 4A and the probe card 6A, guide rails 47 are provided along the Y direction. Along the guide rail 47, as shown in Fig. 8, an alignment bridge 5A capable of moving in the Y direction is provided between a standard position and an imaging position which will be described later. In the following description, the X direction (refer to FIG. 2) is referred to as a left-right direction for convenience of explanation. As shown in FIG. 9, the alignment bridge strip 5A' is provided with the first micro camera 71 and the second micro camera 72 symmetrically with respect to the center line 70 which is equally divided between the left and right sides of the bridge strip 5A, and is opposite to the above-mentioned line 70. The first macro camera 81 and the second macro camera 82 are symmetrically disposed. Each of the first micro camera 71 and the second micro camera 72 corresponds to the first imaging means and the second imaging means. Each of the first macro cameras 81 -18 to 200931556 and the second macro camera 82 corresponds to a first low magnification camera and a second low magnification camera. The viewing angle of any of these cameras is downward. Here, the micro camera Micro Camera (or Macro Camera) is constituted by an optical system including a camera body 71a (72a) and a mirror 71b (72b) as shown in Fig. 16 which will be described later, but in the present invention Technology • Sex is important because it is located below the self-aligning bridge 5A and extends to the optical axis below ©. Therefore, the term "micro camera" (or macro camera) is used in the case of convenience. In the case of aligning the window portion of the photographing under the bridge strip 5A, and referring to the case of the optical system including the camera body and the mirror. In Fig. 9, a small circular portion called a micro camera (or a macro camera) indicates a window portion for photography, and the same will be described later. Then, a micro camera 71, 72 (or a Macro Camera 81, 82) is provided, and two micro cameras are provided, and each of the photographic images is processed by a control unit to be described later. When the micro cameras 71 and 72 are shown in Fig. 2, they are positioned at a larger distance. The cameras 81 and 82 are close to the horizontal line HL side of the boundary between the first inspection unit 21A and the second inspection unit 21B. Further, when the wafer size (wafer diameter) is 300 mm, the distance between the micro camera Ή, 72 and the center line 70 is, for example, 73 mm, and the distance between the macro cameras 81, 82 and the center line 70 is, for example, 45 mm. Further, when the camera indicates the distance from other parts, the optical axis of the camera is set as the measurement point. For example, the distance 1 between the micro cameras 7 1 and 72 and the center line 70 means the distance 1 between the optical axes -19-200931556 of the micro cameras 7 1 and 72 and the center line 70. Further, the 'micro cameras 71 and 72 are configured to enlarge the surface of the wafer W to form a camera having a high magnification of the CCD camera, and the macro cameras 81 and 82 are configured to capture the wafer W at a wide viewing angle. Magnification camera. The standard position of the stop position of the alignment bridge strip 5A is when the wafer W is transferred between the wafer/clamp 4A and the wafer transport mechanism 3, and when the wafer circle W is in contact with the probe card 6A and by the first When the photographing means (micro camera 41) performs the photographing of the probe 29, it is retracted until the alignment bridge strip 5A does not interfere with the position of the wafer holder 4A or the wafer transport mechanism 3. Further, the photographing position is a position at which the surface of the wafer W is photographed by the micro cameras 71 and 72 and the macro cameras 81 and 82 of the bridge strip 5A. The surface of the wafer W is imaged by the micro cameras 71 and 72 and the macro cameras 81 and 82, and the wafer holder 4A is moved by the fixed alignment of the bridge strip 5A at the photographing position. ❹ Then, the photographing position is also shifted from the center position of the probe card 6A to the side after the Y-axis direction (the detection device. The center side of the body 2) as shown in the lower side of Fig. 10. The reason is as follows. As previously stated
般,微型攝影機41被設置在晶圓夾具4A之側面(Y軸方 向前側),藉由該微型攝影機41,於攝影探針29時,也 如第10圖之中段所示般,自晶圓夾具4A之Y軸方向中 之移動行程D2(晶圓夾具4A之中心位置〇1之移動範 圍)自探測卡6A之中心位置02偏移至Y軸方向之後面 側。另外,如第10圖之上段所示般,接觸時(使晶圓W -20- 200931556 和探針29接觸時)之晶圓夾具4A之移動行程D1,爲了 例如使晶圓W和探針29 —次接觸於探測卡6A之下面, 因此形成多數探針29,故成爲非常短距離。 因此,當對齊橋接條5A之攝影位置校準探測卡6A 之中心位置02時,藉由微型攝影機71、72,攝影晶圓W 表面之時之晶圓夾具4A之移動行程D3跳出至上述移動 - 行程D 1之右側。 Q 在此,使對齊橋接條5A之攝影位置偏移至Y軸方向 之前側,使移動行程D2、D3重疊,以包含晶圓夾具4A 之移動行程D1〜D3之區域的可動行程(可移動之範圍) D4變短之方式,即是使探測裝置本體2之Y軸方向之長 度變短。並且,即使移動行程D2、D3非相同範圍,對齊 橋接條5A之攝影位置若較探測卡6A之中心位置02偏移 至Y軸方向之後面側即可。 再者,如第2圖所示般,在探測裝置設置有例如由電 〇 腦所構成之控制部15,該控制部15具有有由程式、記憶 • 體、CPU所構成之資料處理部等。該程式於載體C被搬入 . 至裝載埠11(12)之後,對晶圓W執行檢查,之後,以In general, the micro camera 41 is disposed on the side of the wafer holder 4A (the front side in the Y-axis direction), and the micro-camera 41, when photographing the probe 29, is also shown in the middle of the wafer. The movement stroke D2 in the Y-axis direction of 4A (the movement range of the center position 〇1 of the wafer holder 4A) is shifted from the center position 02 of the probe card 6A to the surface side after the Y-axis direction. Further, as shown in the upper part of Fig. 10, the moving stroke D1 of the wafer holder 4A at the time of contact (when the wafer W -20-200931556 is in contact with the probe 29), for example, the wafer W and the probe 29 are used. The second contact with the probe card 6A makes it possible to form a plurality of probes 29, so that it becomes a very short distance. Therefore, when the center position 02 of the photographing position alignment detecting card 6A of the bridge strip 5A is aligned, the movement stroke D3 of the wafer holder 4A at the time of photographing the surface of the wafer W is jumped out to the above-mentioned movement-stroke by the micro cameras 71, 72. The right side of D 1 . Here, the photographing position of the alignment bridge strip 5A is shifted to the front side in the Y-axis direction, and the movement strokes D2 and D3 are overlapped to include the movable stroke of the region of the movement strokes D1 to D3 of the wafer holder 4A (movable Scope) The manner in which D4 is shortened is to shorten the length of the probe device body 2 in the Y-axis direction. Further, even if the movement strokes D2 and D3 are not in the same range, the photographing position of the alignment bridge strip 5A may be shifted from the center position 02 of the probe card 6A to the back side of the Y-axis direction. Further, as shown in Fig. 2, the detecting device is provided with, for example, a control unit 15 composed of a computer, and the control unit 15 includes a data processing unit including a program, a memory, and a CPU. The program is carried in the carrier C. After loading the cassette 11 (12), the wafer W is inspected, and thereafter,
控制至晶圓W返回載體C而載體C被搬出爲止之一連串 之各部動作,組成步驟群。該程式(包含處理參數之輸入 操作或有關顯示之程式)例如係被儲存於軟碟、CD、MO (光磁性碟)、硬碟等之記憶媒體16而被安裝於控制部 15 > 將第2圖所示之控制部15之構成之一例表示於第11 -21 - 200931556 圖。151爲執行探測裝置之一連串動作的程式,153爲儲 存以檢查部21A(21B)所執行之檢查處理程式之處理程 式存儲部,154爲探測裝置之參數或運轉模式之設定,或 是執行有關運轉之各操作的操作部,155爲匯流排。操作 部154係藉由例如觸控面板等之畫面所構成。 接著,針對上述探測裝置之作用於下述說明。首先, • 藉由無塵室內之自動搬運車(AGV),自與裝載埠11 ❹ (12)中之探測裝置本體2相反側,將載體C搬入至該裝 載埠11。此時之載體C之交接口雖然朝向探測裝置本體 2,但是載置台13 ( I4)旋轉而與快門S對向。之後載置 台13前進,載體C被推壓至快門S側,取下載體C之蓋 和快門S。 接著,自載體C內取出晶圓W,雖然被搬運至檢查部 2 1 A ( 2 1 B ),但是針對該以後之作用說明,兩片晶圓 Wl、W2已各被第1檢查部21A及第2檢查部21B檢查, ❹ 在該狀態下,自載體C取出後述之晶圓W3及晶圓W4, • 針對執行一連串之工程的樣子予以說明。 . 首先,如第12圖所示般,中段機械臂32進入至第2 載體C2內,接受晶圓W3而後退至預校準之位置。接 著,夾具部36上升而使晶圓W3上升,並且予以旋轉並 根據光檢測器3 7之檢測結果,調整晶圓W之方位,使第 1、第2檢查部21A、21B中對應於搬入該晶圓W3之檢查 部21A(21B)之缺口方位,再者即使針對偏心也予以檢 測,執行預校準。接著,同樣下段機械臂33進入至第2 -22- 200931556 載體C2內,如第13圖所不般’接取晶圓W4’執行晶圓 W4之方位之調整和偏心之檢測’使成爲對應於搬入該晶 圓W4之檢查部21 (21B)之缺口方位。然後’爲了執行 晶圓W3、W4和晶圓Wl、W2之交換,晶圓搬運機構3下 降。 接著,執行第1檢査部21A內之晶圓W1和晶圓搬運 • 機構3上之晶圓W3之交換。於晶圓W1之檢查完成之 ❹ 時,晶圓夾具4A則如第14圖所不般,移動至靠近間隔壁 20之交接位置。然後,解除晶圓夾具4A之吸引夾具,晶 圓夾具4A內之升降銷則上升,使晶圓W1上升。接著, 空的上段機械臂31進入至晶圓夾具4A上,藉由升降銷下 降而接取晶圓W1,然後後退。再者,晶圓搬運機構3些 許上升,中段機械臂32進入至晶圓夾具4A,當藉由先前 之預校準判斷偏離晶圓W3之中心位置之時,則以修正晶 圓W3之偏心之方式,藉由無圖式之上述上升銷和中段機 ❾ 械臂32之共同動作,在晶圓夾具4A上載置晶圓W3。 • 然後,如第15圖所示般,經晶圓W3交給至第1檢 • 查部21A,使成爲空的中段機械臂32進入至第2檢查部 21B,自晶圓夾具4B同樣接取檢查完之晶圓W2,於後退 之後,使下段機械臂33進入至晶圓夾具4B上,自下段機 械臂33將檢查前之晶圓W4交給至晶圓夾具4B。 之後,晶圓搬運機構3上升,晶圓W1和晶圓W2返 回至例如第1載體C1,再者即使針對下一個晶圓W (晶 圓W5、W6 )也同樣自載體C各取出兩片,同樣執行處 -23- 200931556 理。 另外,在第1檢查部21A中,於晶圓W3被交給至晶 圓夾具4A之後,藉由被設置在晶圓夾具4A之微型攝影 機41,執行探測卡6A之探針29的攝影。即是,使探針 2 9之針頭位於微型攝影機4 1之視角之中心例如十字標記 之中心,取得此時之晶圓夾具4A之驅動系統之位置座標 • (X、Y、Z方向之座標)。具體而言,攝影離例如X方向 ® 最遠之兩端的探針29及離Υ方向最遠之兩端的探針29, 把握探測卡6Α之中心和探針29之排列方向。此時,藉由 被設置在晶圓夾具4Α之微型攝影機42,找出目標附近之 區域,之後藉由微型攝影機41檢測出目標之探針29之針 頭位置。並且,此時之對齊橋接條5Α退避至第8圖所示 之標準位置。Each of a series of operations until the wafer W returns to the carrier C and the carrier C is carried out is controlled to constitute a step group. The program (including the input operation of the processing parameters or the program related to the display) is, for example, stored in a memory medium 16 such as a floppy disk, a CD, an MO (optical magnetic disk), a hard disk, or the like, and is installed in the control unit 15 > An example of the configuration of the control unit 15 shown in Fig. 2 is shown in Figs. 11-21-200931556. 151 is a program for executing a series of operations of the detecting device, 153 is a processing program storage unit for storing an inspection processing program executed by the inspection unit 21A (21B), and 154 is a setting of a parameter or an operation mode of the detecting device, or performs related operations. The operation unit 155 of each operation is a bus bar. The operation unit 154 is constituted by a screen such as a touch panel. Next, the action of the above-described detecting device will be described below. First, the carrier C is carried into the loading cassette 11 from the side opposite to the detecting unit body 2 of the loading cassette 11 (12) by the automatic transport vehicle (AGV) in the clean room. At this time, the interface of the carrier C faces the probe main body 2, but the mount 13 (I4) rotates to face the shutter S. After that, the stage 13 advances, and the carrier C is pushed to the side of the shutter S, and the cover of the downloaded body C and the shutter S are taken. Next, the wafer W is taken out from the carrier C and transported to the inspection unit 2 1 A ( 2 1 B ). However, for the subsequent operation, the two wafers W1 and W2 are each subjected to the first inspection unit 21A and The second inspection unit 21B checks, ❹, in this state, the wafer W3 and the wafer W4, which will be described later, are taken out from the carrier C. • A description will be given of how to perform a series of processes. First, as shown in Fig. 12, the middle arm 32 enters the second carrier C2, receives the wafer W3, and retreats to the pre-calibrated position. Then, the gripper portion 36 is raised to raise the wafer W3, and is rotated, and the orientation of the wafer W is adjusted based on the detection result of the photodetector 37, so that the first and second inspection portions 21A and 21B are moved in. The notch orientation of the inspection portion 21A (21B) of the wafer W3 is detected even for the eccentricity, and pre-calibration is performed. Then, the lower arm 36 enters the second -22-200931556 carrier C2, as shown in Fig. 13, 'takes the wafer W4' to perform the orientation adjustment of the wafer W4 and the eccentricity detection'. The notch orientation of the inspection portion 21 (21B) of the wafer W4 is carried. Then, in order to perform the exchange of the wafers W3, W4 and the wafers W1, W2, the wafer transport mechanism 3 is lowered. Next, the exchange of the wafer W1 in the first inspection unit 21A and the wafer W3 on the wafer conveyance mechanism 3 is performed. When the inspection of the wafer W1 is completed, the wafer holder 4A is moved to a position close to the partition wall 20 as in Fig. 14. Then, the suction jig of the wafer holder 4A is released, and the lift pins in the wafer holder 4A are raised to raise the wafer W1. Next, the empty upper arm 31 enters the wafer holder 4A, and the wafer W1 is taken up by the lift pin down, and then retracted. Furthermore, the wafer transport mechanism 3 is slightly raised, and the middle robot arm 32 enters the wafer chuck 4A. When the position of the wafer W3 is deviated from the center position of the wafer W3 by the previous pre-calibration, the eccentricity of the wafer W3 is corrected. The wafer W3 is placed on the wafer holder 4A by the joint operation of the rising pin and the middle machine arm 32 without a pattern. Then, as shown in Fig. 15, the wafer W3 is delivered to the first inspection unit 21A, and the empty intermediate robot 32 enters the second inspection unit 21B, and is received from the wafer holder 4B. After the wafer W2 is inspected, after the retreat, the lower arm 33 is brought into the wafer holder 4B, and the wafer W4 before inspection is transferred from the lower arm 33 to the wafer holder 4B. Thereafter, the wafer transfer mechanism 3 is raised, and the wafer W1 and the wafer W2 are returned to, for example, the first carrier C1, and even if the next wafer W (wafers W5 and W6) is taken out from the carrier C, two pieces are taken out. The same implementation department -23- 200931556. Further, in the first inspection unit 21A, after the wafer W3 is delivered to the wafer holder 4A, the probe 29 of the probe card 6A is imaged by the micro camera 41 provided in the wafer holder 4A. That is, the needle of the probe 29 is placed at the center of the viewing angle of the micro camera 41, for example, at the center of the cross mark, and the position coordinates of the driving system of the wafer holder 4A at this time are obtained. (Coordinates in the X, Y, and Z directions) . Specifically, the probe 29, such as the probe 29 at the farthest end from the X direction, and the probe 29 at the farthest from the x direction, are photographed, and the center of the probe card 6 and the arrangement direction of the probe 29 are grasped. At this time, the area near the target is found by the micro camera 42 provided in the wafer holder 4, and then the position of the probe of the target probe 29 is detected by the micro camera 41. Also, at this time, the alignment bridge strip 5 is retracted to the standard position shown in Fig. 8.
接著,使對齊橋接條5Α移動至晶圓W32之攝影位置 (參照第8圖),並且如第16圖(a)所示般,使標靶44 ❹ 突出至晶圓夾具4A側之微型攝影機41和對齊橋接條5A • 側之第1微型攝影機7 1之間之區域,校準晶圓夾具4 A之 • 位置,使兩攝影機41、71之焦點及光軸與標靶44之標靶 標記一致,執行所謂的兩攝影機41、71的搜尋原點。再 者’如第16圖(b)所示般,即使針對第2微型攝影機 72,也同樣執行搜尋原點。在各執行兩攝影機41、71之 搜尋原點之時點及執行兩攝影機41、72之捜尋原點的時 點中’記憶晶圓夾具4A中之驅動系統所管理之座標位置 (X方向座標位置、Y方向座標位置、Z方向座標位 -24- 200931556 置)。接著,於使標靶44退避之後’使晶圓夾具4A位 對齊橋接條5A之下方側,如此一來執行精密校準。 首先,使用微距攝影機81、82求取晶圓W之中心 置。第17圖係攝影晶圓W上之周緣中之4點E1〜E4 求出各個座標位置,該些係表示求取連結4點中之E1 E3之兩點之直線和連結E2和E4之兩點之直線之交點 • 樣子。此時,調整晶圓夾具4A之位置,使晶圓W之周 0 同時位於第1微距攝影機81及第2微距攝影機82之各 角之中心例如十字標記之中心。然後,於攝影E2、E3 後,移動至與連結上述各視角之中心彼此之直線正交之 向,因攝影E1、E4,故上述兩條直線之交點成爲晶圓 之中心C之座標。如先前所述般,對齊橋接條5A側之 1微型攝影機71及第2微型攝影機72和晶圓夾具4A 之微型攝影機41執行搜尋原點,再者,因事先可知第 微型攝影機71及第2微型攝影機72之各光軸之間隔距 φ 且事先知道第1微型攝影機81及第2微型攝影機82之 • 光軸之間隔距離,故可以明白晶圓之中心C相對於晶圓 . 具4A側之微型攝影機41之光軸的相對座標。 再者,連結El、E3 ( E2、E4 )之直線之長度成爲 圓W之直徑。例如,即使爲3 00mm晶圓W,由於實際 晶圓W之直徑對於300mm含有些許誤差,故爲了正確 成晶圓W上之晶片映射(各電極墊之座標),必須把 晶圓W之中心座標和直徑。再者,由於晶圓上之座標 統(所謂的理想座標系統)中之各晶片之電極墊的登記 於 位 而 和 的 緣 視 之 方 W 第 側 1 離 各 夾 晶 上 作 握 系 位 -25- 200931556 置,記憶在自晶圓W之中心座標之相對位置,故必須求 出晶圓W之中心座標。在該例中,如第18圖(a )、 (b)所示般,藉由微距攝影機81、82,循序攝影晶圓W 之第18圖中之下半份之左右,求取E2、E3之位置。接 著,使晶圓W移動至Y方向,則如第19圖(a) 、(b) 所示般,藉由微距攝影機81、82,循序攝影晶圓W之第 • 19圖中之上半部之左右,求取El、E4之位置。 〇 接著,晶圓W上之1C晶片之排列(形成在晶片間之 基板之線上的切割線)係以沿著X軸及Y軸之方式與晶 圓W之方位一致。晶圓w於被載置於晶圓夾具A4之前, 因執行校準大槪調整其方位,故在該階段,晶圓W之1C 晶片之配列方向之一方大槪與Y軸平行,即使具有方位之 偏差’其角度也在1度左右。第2圖爲表示晶圓W上之 1C晶片配列之例,400爲1C晶片,500爲切割線。Next, the alignment bridge strip 5 is moved to the photographing position of the wafer W32 (refer to Fig. 8), and as shown in Fig. 16(a), the target 44 ❹ is projected to the micro-camera 41 on the side of the wafer holder 4A. And aligning the area between the bridge strip 5A and the first micro camera 7 1 on the side, aligning the position of the wafer holder 4 A so that the focus and optical axis of the two cameras 41, 71 coincide with the target mark of the target 44, The search origin of the so-called two cameras 41, 71 is performed. Further, as shown in Fig. 16(b), even for the second micro camera 72, the search origin is similarly executed. In the time point when the search origin of the two cameras 41, 71 is executed and the time when the origin of the two cameras 41, 72 is executed, the coordinate position managed by the drive system in the memory wafer holder 4A (the X-direction coordinate position, Y coordinate position, Z direction coordinate position -24-200931556). Next, after the target 44 is retracted, the wafer holder 4A is aligned to the lower side of the bridge strip 5A, and thus the precision calibration is performed. First, the center of the wafer W is obtained using the macro cameras 81, 82. Figure 17 shows the coordinates of each of the four points E1 to E4 on the periphery of the photographic wafer W. These lines represent the line connecting the two points of E1 E3 of the four points and the two points connecting E2 and E4. The intersection of the lines • Looks. At this time, the position of the wafer holder 4A is adjusted so that the circumference 0 of the wafer W is located at the center of each corner of the first macro camera 81 and the second macro camera 82, for example, at the center of the cross mark. Then, after the photographs E2 and E3, the movement is made orthogonal to the line connecting the centers of the respective viewing angles. Since the photographs E1 and E4 are photographed, the intersection of the two straight lines becomes the coordinates of the center C of the wafer. As described above, the micro camera 71 and the second micro camera 72 on the side of the bridge bar 5A and the micro camera 41 of the wafer jig 4A perform the search origin, and the micro camera 71 and the second micro are known in advance. The distance between the optical axes of the camera 72 is φ and the distance between the optical axes of the first micro camera 81 and the second micro camera 82 is known in advance. Therefore, it can be understood that the center C of the wafer is opposite to the wafer. The relative coordinates of the optical axis of the camera 41. Further, the length of the straight line connecting El and E3 (E2, E4) becomes the diameter of the circle W. For example, even if the wafer W is 300 mm, since the diameter of the actual wafer W contains some error for 300 mm, in order to correctly map the wafer on the wafer W (the coordinates of each electrode pad), the center coordinates of the wafer W must be And diameter. Furthermore, since the electrode pads of the wafers in the coordinate system on the wafer (the so-called ideal coordinate system) are registered in place, the side of the edge W is on the side 1 from the respective crystals. - 200931556 Set, the memory is in the relative position from the center coordinates of the wafer W, so the center coordinates of the wafer W must be obtained. In this example, as shown in Figs. 18(a) and (b), the macro cameras 81 and 82 sequentially scan the lower half of the 18th image of the wafer W to obtain E2. The location of E3. Next, by moving the wafer W to the Y direction, as shown in FIGS. 19(a) and (b), the macro cameras 81 and 82 sequentially scan the top half of the wafer 19 of FIG. Around the department, seek the position of El, E4. Next, the arrangement of the 1C wafers on the wafer W (the cut lines formed on the lines of the substrates between the wafers) coincides with the orientation of the wafer W along the X-axis and the Y-axis. Before the wafer w is placed on the wafer holder A4, the orientation is adjusted by performing the calibration. Therefore, at this stage, one of the alignment directions of the 1C wafer of the wafer W is parallel to the Y-axis, even if it has orientation. The deviation 'the angle is also about 1 degree. Fig. 2 is a view showing an example of arrangement of 1C wafers on the wafer W, 400 is a 1C wafer, and 500 is a dicing line.
首先,如第21圖(a)所示般,藉由一方之微距攝影 φ 機81攝影1C晶片之角度,藉由其攝影結果,把握晶圓W • 之大槪方位。接著,藉由微型攝影機71、72,各攝影事先 . 決定之4個特定點P 1〜P4中沿著X軸而排列之特定點 PI、P2。該些特定點P1〜P4相當於ic晶片400之角。若 特定點PI、P2完全平行於X軸時,使根據設計値被計算 出之特定點P1、P2之χ'γ座標位置與微型攝影機71、 72之光軸位置一致之時,特定點pi、Ρ2應位於微型攝影 機71、72之各視角之中心。但是,如此之情形極爲稀 少’因晶圓W之方位雖然僅些許自特定方向偏離,即是 -26- 200931556 因縱軸之切割線500各自X、γ軸傾斜,故晶圓W移動至 設計位置,引起在微型攝影機71、72之各視角內不存在 特定點PI、P2之情形。 在此,首先根據以微距攝影機81所攝影之結果,計 算晶圓W之大槪方位,根據其計算結果,驅動晶圓夾具 4A使特定點PI、P2循序位於微型攝影機71、72之視角 • 內。然後,藉由微型攝影機71、72循序攝影特定點P1、 Q P2 (使特定點PI、P2位於視角之中心)。第21圖(b ) 及第22圖(a)表示如此之情形。因藉由該攝影結果,可 以計算晶圓W之方位之偏離部份,故根據其計算結果, 僅偏離之部分,使晶圓夾具4A旋轉,修正晶圓W之方位 (第22圖(b))。該結果,晶圓W之縱橫之切割線500 各平行於X、Y軸。 然後,爲了確認晶圓W之方位正確被修正,如第23 圖(a)及第23圖(b)所示般,藉由微型攝影機71、72 Q 循序攝影特定點P3、P4。若晶圓W之方位成爲特定般之First, as shown in Fig. 21(a), the angle of the 1C wafer is photographed by one of the macro photography φ machines 81, and the orientation of the wafer W is grasped by the photographing result. Next, the micro-cameras 71 and 72 respectively select the specific points PI and P2 arranged along the X-axis among the four specific points P 1 to P4 determined in advance. The specific points P1 to P4 correspond to the corners of the ic wafer 400. When the specific points PI and P2 are completely parallel to the X-axis, when the position of the χ' γ coordinate of the specific points P1 and P2 calculated according to the design 一致 coincides with the position of the optical axis of the micro cameras 71 and 72, the specific point pi, Ρ2 should be located at the center of each of the micro cameras 71, 72. However, such a situation is extremely rare. Since the orientation of the wafer W is only slightly deviated from a specific direction, that is, -26-200931556, since the X and γ axes of the cutting line 500 of the vertical axis are inclined, the wafer W is moved to the design position. This causes a situation in which the specific points PI, P2 do not exist in the respective angles of view of the micro cameras 71, 72. Here, first, based on the result of the photographing by the macro camera 81, the maximum orientation of the wafer W is calculated, and based on the calculation result, the wafer jig 4A is driven to sequentially point the specific points PI, P2 at the angles of the micro cameras 71, 72. Inside. Then, the specific points P1, Q P2 are sequentially photographed by the micro cameras 71, 72 (the specific points PI, P2 are located at the center of the angle of view). Fig. 21(b) and Fig. 22(a) show the situation. By the result of the photographing, the deviation of the orientation of the wafer W can be calculated. Therefore, according to the calculation result, the wafer holder 4A is rotated only to offset the orientation of the wafer W (Fig. 22(b) ). As a result, the vertical and horizontal cutting lines 500 of the wafer W are parallel to the X and Y axes. Then, in order to confirm that the orientation of the wafer W is correctly corrected, as shown in Figs. 23(a) and 23(b), the specific points P3 and P4 are sequentially photographed by the micro cameras 71 and 72Q. If the orientation of the wafer W is specific
• 方位時,計算用以接觸晶圓W和探針29之晶圓夾具4A• When azimuth, calculate the wafer holder 4A for contacting the wafer W and the probe 29
. 之X、Y、Z之座標位置(接觸位置)。再者,若晶圓W 之方位未成爲預定般之方位時,則再次修正晶圓W之方 位,之後藉由微型攝影機71、72,再次各攝影特定點 Ρ1、Ρ2,執行晶圓W方位之確認。 如此一來,自執行各攝影之晶圓夾具4Α之位置及執 行上述搜尋原點之時之晶圓夾具4Α之位置,在控制部15 側,可以計算晶圓W3上之各電極墊和探測卡6Α之各探 -27- 200931556 針29接觸之晶圓夾具4A之座標。然後,使晶圓夾具4A 移動至所計算之接觸座標位置,一次使晶圓W3上之各電 極墊和探測卡6A之各探針29接觸。然後,自無圖式之測 試頭經彈簧針單元28及探測卡6A,將特定電性訊號發送 至晶圓W3上之各1C晶片之電極墊,依此執行各1C晶片 _ 之電性特性。之後,與先前所述之晶圓W1相同,使晶圓 • 夾具4B移動至交接位置,藉由晶圓搬運機構3自晶圓夾 φ 具4B搬出晶圓W3。並且,即使針對被搬入至第2檢査部 21B之晶圓W4也相同執行檢查。 並且在本實施型態中,於組裝裝置時,藉由下述方法 求出晶圓夾具4A之旋轉中心座標(工作台上之X、Y座 標),當作機器參數被記憶。首先,將基準晶圓載置在夾 具,並且記憶外周之至少3點的基準圖案和其位置座標。 之後僅以一定角度部份使晶圓夾具4A旋轉,確認基準圖 案,記憶位置座標》然後,以直線連結晶圓夾具4A旋轉 Q 前和旋轉後之座標,當描繪其垂直二等分線之時,各個線 • 交叉,以其交叉之交點作爲旋轉中心而予以記憶。然後, . 於校準時,可由下式方程式求取晶圓w之中心位置和校 準用之標靶位置之旋轉後之座標。即是,以旋轉中心爲原 點之座標(XI、Y1)僅朝時鐘方向旋轉角度0之時之座 標(X2、Y2),可由 X2=Xlxcose+Ylxsin0、Y2 = —Xlxsin0+Ylxcos0 。 在此,針對在對齊橋接條5A設置兩個微型攝影機 71、72和兩個微距攝影機81、82之優點予以敘述。爲了 -28- 200931556 晶圓W之中心位置而所執行之晶圓w之周緣之4點之攝 影,針對(E2、E3 )及(El、E4 )之各組,僅微距攝影 機81、82之切換而已幾乎可以同時執行。然後,執行晶 圓夾具4A之移動El、E3之確認之後,僅以一次在Y方 向移動即可。對此,微距攝影機若爲1個時,則必須使夾 具循序移動至對應於晶圓W上之4點之各點的位置。因 - 此,藉由使用兩個微距攝影機81、82,以短時間執行晶圓 φ W之周緣位置之4點攝影。 再者,第24圖(a)係表示在對齊橋接條5A僅搭載 一個微型攝影機71,並在使其光軸位於對齊橋接條5A之 中心的構造時,攝影先前所述之晶圓w上之PI、P2之時 的樣子。再者,第24圖(b)係在上述實施型態中,表示 攝影晶圓W上之PI、P2之時的樣子。由該圖可知,晶圓 夾具4A之移動距離於微型攝影機1個之時,則爲L1,但 是於微型攝影機爲兩個之時,則成爲L2,其移動距離L2 〇 大幅度短於L1。 並且,作爲用以執行晶圓w和探針29之定位之作業 _ 的一個,則有藉由微型攝影機71、72觀察晶圓W之左右 兩端部分之校準標記,或於檢査後觀看晶圓W上之針跡 之時,因此在微型攝影機71、72之正下方存在晶圓W之 左右兩端部分或是其附近。第25圖表示執行如此之操作 之時之晶圓夾具4A之移動之情形。現在,在對齊橋接條 5A之下方位置,以對齊橋接條5A之中心線70和晶圓W 之中心C重疊之方式,存在晶圓W。自此當欲藉由微型攝 -29 - 200931556 影機71朝向晶圓W攝影左側區域之時’則使晶圓夾具4A 朝X方向移動至朝向晶圓W之左端位於微型攝影機71之 正下方。此時之晶圓夾具4A之移動量成爲Ml。在此’若 爲300mm晶圓時,Ml貝IJ成爲77mm。 因此,如第2 5圖所示般,以晶圓W之中心C位於對 齊橋接條5A之中心線70之狀態爲基準’自該狀態’晶圓 - W移動至左側區域及右側區域之量各爲Ml。在該例中, φ 因使用300mm晶圓,Ml爲77mm,故晶圓W之全體之移 動量成爲1 54mm。 第26圖爲當對齊橋接條5A安裝一個微型攝影機71 時,於此時,因首先使晶圓W之中心位於微型攝影機71 之正下方之後,使晶圓夾具4A移動至X方向,並使晶圓 W之左右兩端部分各位於微型攝影機71之正下方,故如 第26圖所示般,晶圓W移動至左側區域及右側區域之量 M2相當於該晶圓 W之半徑部份。在該例中,因使用 〇 300mm晶圓,故M2爲150mm,晶圓W之移動量成爲 • 3 0 〇mm 〇 • 由上述可知,藉由在對齊橋接條5A設置兩個微型攝 影機71、72和兩個微距攝影機81、82,晶圓夾具4A之 移動量少即可。 然後,於使用兩個微距攝影機81、82之時,以相對 於上述中心線70左右對稱設置爲佳。其理由於藉由微距 攝影機81、82各分擔晶圓W之左右區域之攝影之時,相 對於中心線70晶圓夾具4A之移動區域呈左右對稱,當與 -30- 200931556 藉由微型攝影機71、72攝影晶圓W之時之移動區域重疊 之時,其結果,晶圓夾具4A之移動區域比起非對稱之時 變窄。並且,微距攝影機81、82之配置及使相對於上述 中心線70呈非對稱亦可。 以上之裝置之精密校準之動作雖然以第1圖中之第1 ^ 檢查部2 1 A側之動作爲中心予以說明,但是即使針對第2 ' 檢査部21B也完全同樣執行精密校準。再者’包含精密校 〇 準之動作的一連串動作係藉由控制部15內之程式152而 實行。 若藉由上述之實施型態時,則可取得下述般之效果。 在晶圓夾具4A ( 4B )及探測卡6A ( 6B )之間的高度位置 可於水平方向移動之移動體之對齊橋接條5A(5B),設 置有視角朝下之晶圓攝影用之兩個微型攝影機71、72和 兩個微距攝影機81、82。然後,微型攝影機71、72互相 之光軸間隔開,再者針對微距攝影機81、82,因互相之光 G 軸也間隔開,故爲了取得晶圓W之位置資訊,攝影晶圓 • w之時,晶圓夾具4A(4B)之移動量少即可。因此,因 . 可以謀求裝置之小型化,再者也可以縮短取得晶圓W之 位置資訊所需之時間,故可以有助於高生產率化。 並且,針對本發明之其他實施型態予以說明。第27 圖表示該實施型態所涉及之對齊橋接條5A及控制部15。 並且,因針對對齊橋接條5B也爲相同構成,故以一方之 對齊橋接條5 A作爲代表予以說明。 本實施型態之對齊橋接條5A中,係以兩個微型攝影 -31 - 200931556 機71、72可移動之單元所構成,雙方之微型攝影機71、 72被配設成可連接分離自如。然後,在對齊橋接條5A搭 載有使微型攝影機71、72移動之驅動機構100、200。該 驅動機構100具備有藉由支撐構件101、102支撐兩端部 之滾珠螺桿103和導引軸105,滾珠螺桿103和導引軸 . 105相對於微型攝影機71之移動方向係被平行配設。然 * 後,在滾珠螺桿103之一端側,具體而言在微型攝影機71 〇 之背部側連接有轉動滾珠螺桿之驅動馬達104,藉由該驅 動馬達104使滾珠螺桿103轉動,依此微型攝影機71成 爲再藉由導引軸1〇5所支撐之狀態下移動的態樣。並且, 針對驅動機構200,因與驅動機構100相同構成,故在此 省略說明。 驅動馬達1〇4、2〇4連接於控制部15,藉由控制部15 控制驅動。在該控制部15,除第1實施型態之控制部15 所具備之CPU151、程式152、處理程式153、操作部 G 154、匯流排155之外,經匯流排155設置有攝影機移動 •工作台156。攝影機移動工作台156爲使對應於1C晶片 - 400之尺寸之資訊和微型攝影機之間隔距離對應之工作 台,驅動馬達1〇4、204係根據該照相移動台156之各工 作台之資料而被驅動。 在先前所述之實施型態中,因固定兩個微型攝影機之 位置,故在X方向互相間隔之P1、P2(P3、P4)之間隔 距離和微型攝影機之距離不一致(一致極稀少),爲了攝 影P1之後攝影P2’必須使晶圓夾具4A稍微移動。在 -32- 200931556 此,藉由構成連接分離自如,可以將微型攝影機之間隔距 離調整成PI、P2(P3、P4)之間隔距離一致。PI、P2 (P3、P4)係 1C 晶片 400 之角部,故 PI、P2(P3、P4) 之間隔距離係藉由1C晶片400之尺寸而被決定。 因此,在控制部15中,使攝影機移動工作台156儲 . 存於記億體’並且在進行晶圓檢査之階段自輸入部輸入對 ' 應於晶片尺寸之資訊,依此讀出對應於所輸入之晶片尺寸 © 的微型攝影機,並控制驅動部使成爲其間隔距離而使微型 攝影機移動。然後,在微型攝影機71、72間之距離成爲 L0之時點停止驅動馬達1 04。依此,在本實施型態之對齊 橋接條5A中,如第28圖所示般,使兩微型攝影機71、 72移動,可在配合攝影之晶圓之1C晶片40 0之尺寸而所 決定之距離L0變更兩微型攝影機71、72間之距離。 若藉由如此之實施型態時,則可取得下述般之效果。 若互相連接分離自如地設置晶圓攝影用之微型攝影機71、 〇 72時,因其間隔距離可以調整成晶圓W上之兩個特定點 ‘ 例如第20圖之PI、P2 ( P3、P4 )之互相間隔距離,故若 . 使晶圓夾具4A ( 4B )移動至攝影一個特定點PI ( P3 )之 位置時,則可以使晶圓夾具4A ( 4B )靜止,直接執行攝 影其他一個特定點P1(P4),並且有助於成爲更高生產 率化。 作爲先前所述之探測卡5A不僅執行一次接觸之時, 即使例如以對應於由晶圓W之直徑予以2分割之區域的 電極墊群配置之方式,設置探針29,分爲兩次執行晶圓 -33- 200931556 W和探針29之接觸之情形,或以對應於將晶圓W於 向予以4分割之區域之電極墊群配置之方式,設置 29,循序使晶圓W接觸於該被4分割之區域之情形 可。於如此之時,藉由使晶圓夾具4A旋轉,執行探f 和晶圓W之接觸。本發明之探測裝置中,適用於藉 . 次至4次的接觸完成晶圓W檢查之構成爲佳。 ' 再者,微型攝影機71、72係在光學系統之光路 ❹ 置變倍機構,即使藉由控制變倍機構,取得較當作高 攝影機使用之時之倍率稍微低之倍率之視角(中間視 亦可。並且,當作高倍率使用之時之倍率爲可以確認 墊上之針跡程度的倍率,例如僅有一個電極墊進入視 之倍率。於檢査後,當操作器確認電極墊上之針跡時 微距攝影機81、82則不觀看到針跡,再者在微型攝 71、72僅可以一個一個確認電極墊,花費較長時間, 中間視角可以一次觀看多數電極墊,可以有效率確認 © 針跡。並且,攝影先前所述之晶圓 W之定位用之 點,即使利用該中間視角亦可。 • 在上述中,第1微型攝影機71之光軸和第2微 影機 72之光軸之間隔距離,在上述之例中,由 14 6mm,故成爲接近晶圓之半徑(150mm )之尺寸。 一來,藉由將上述光軸間之尺寸設定成接近於晶圓 徑,則有可以使用以將晶圓W全面放入微型攝影機 72之攝影機視角之工作台移動量成爲最小之優點。 在上述中,作爲基板搬運臂如先前所述般並不限 周方 探針 等亦 if 2 9 由1 上設 倍率 角) 電極 角內 ,在 影機 藉由 有無 特定 型攝 於爲 如此 之半 71、 定於 -34- 200931556 具備有3根機械臂,即使爲1根之機械臂亦可。再者’預 校準機構並不限定於被組合於基板搬運臂’即使爲與基板 搬運臂獨立被設置在裝置內亦可。此時’晶圓W自基板 搬運臂被交給至預校準機構之工作台’晶圓之方位被調整 成特定方位,並且以晶圓之中心位於基板搬運臂之特定部 . 位之方式,執行晶圓從上述工作台交接至基板搬運臂。並 且,適用本發明之探測裝置即使裝置本體僅具備一台亦 〇 可,即使對於3台以上之裝置本體使裝載埠共通化亦可。 【圖式簡單說明】 第1圖爲表示本發明之第1實施型態中之探測裝置之 一例之全體的槪觀斜視圖。 第2圖爲表示上述探測裝置之一例的槪略平面圖。 第3圖爲表示上述探測裝置之一例的縱剖面圖。 第4圖爲表示上述探測裝置中之裝載埠之一例的斜視 G 圖。 ‘第5圖爲表示上述探測裝置中之晶圓搬運機構之—例 • 的槪略圖。 第6圖爲表示上述探測裝置中之檢查部之一例的斜視 圖。 第7圖爲表示上述檢查部之一例的槪略圖。 第8圖爲表示上述檢查部中之對齊橋接條之位置的平 面圖。 第9圖爲表示本發明之實施型態所涉及之對齊橋接條 -35- 200931556 的平面圖。 第1〇圖爲表示上述檢查部中之晶圓夾具之移動行程 之一例的槪略圖。 第11圖爲表示上述實施型態所使用之控制部之構成 之一例的構成圖。 - 第12圖爲表示上述探測裝置中之作用之一例的平面 • 圖。 ❹ 第13圖爲表示上述探測裝置中之作用之一例的平面 圖。 第14圖爲表示上述探測裝置中之作用之一例的平面 圖。 第15圖爲表示上述探測裝置中之作用之一例的平面 圖。 第16圖爲用以說明兩攝影機搜尋原點之圖式。 第17圖爲表示對齊橋接條之微距攝影機之使用方法 ®的說明圖。 第18圖爲表示對齊橋接條之微距攝影機之使用方法 ‘的說明圖。 第19圖爲表示對齊橋接條之微距攝影機之使用方法 的說明圖。 第20圖爲表示晶圓W上之1C晶片之配列的例圖。 第2 1圖爲用以說明本實施型態之晶圓方位之校準態 樣的第1圖。 第22圖爲用以說明本實施型態之晶圓方位之校準態 -36- 200931556 樣的第2圖。 第23圖爲用以說明本實施型態之晶圓方位之校準態 樣的第3圖。 第24圖爲用以說明使用本實施型態和以往例之對齊 橋接條之時之晶圓夾具之移動距離之差異的圖式。 - 第25圖爲表示使用對齊橋接條之時之X方向之晶圓 . W之全體移動量的說明圖。 © 第26圖爲表示在對齊橋接條安裝一個微型攝影機時 之X方向之晶圓之全體移動量的說明圖。 第27圖爲表示其他實施型態所涉及之對齊橋接條及 控制部的圖式。 第28圖爲用以說明兩微型攝影機間之距離調整之作 用的圖式。 【主要元件符號說明】 ® 1 :裝載部 2 :探測裝置本體 * 3 :晶圓搬運機構 4A、4B :晶圓夾具 5A、5B :對齊橋接條 6A、6B :探測卡 10 :搬運室 η :第〗裝載埠 12 :第2裝載埠 -37- 200931556 、21Β :檢查部 探針 機械臂 上段機械臂 中段機械臂 下段機械臂 夾具部 3 8 :光感測器 微型攝影機 微型攝影機 微型攝影機 微型攝影機 -38. The coordinate position (contact position) of X, Y, and Z. Further, if the orientation of the wafer W does not become a predetermined orientation, the orientation of the wafer W is corrected again, and then the micro-cameras 71 and 72 respectively photograph the specific points Ρ1 and Ρ2 to perform the wafer W orientation. confirm. In this way, from the position of the wafer holder 4 for performing each photographing and the position of the wafer holder 4 when the search origin is executed, on the side of the control unit 15, each electrode pad and the probe card on the wafer W3 can be calculated. 6Α之探 -27- 200931556 The coordinates of the wafer fixture 4A contacted by the needle 29. Then, the wafer holder 4A is moved to the calculated contact coordinate position, and the respective electrode pads on the wafer W3 are brought into contact with the probes 29 of the probe card 6A at a time. Then, the test head from the no-pattern test unit transmits the specific electrical signal to the electrode pads of the respective 1C wafers on the wafer W3 via the pogo pin unit 28 and the probe card 6A, thereby performing the electrical characteristics of the respective 1C wafers. Thereafter, the wafer/clamp 4B is moved to the delivery position in the same manner as the wafer W1 described above, and the wafer W3 is carried out from the wafer holder φ 4B by the wafer transfer mechanism 3. Further, the inspection is performed in the same manner for the wafer W4 that is carried into the second inspection unit 21B. Further, in the present embodiment, when the apparatus is assembled, the center coordinates of rotation (X and Y coordinates on the table) of the wafer holder 4A are obtained by the following method, and are memorized as machine parameters. First, the reference wafer is placed on the chuck, and the reference pattern of at least 3 points of the outer circumference and its position coordinates are memorized. Then, the wafer holder 4A is rotated only at a certain angle portion, the reference pattern is confirmed, and the position coordinates are stored. Then, the coordinates of the wafer holder 4A before and after the rotation of the wafer holder 4A are linearly connected, and when the vertical bisector is drawn, , each line • cross, remembered by the intersection of its intersection as the center of rotation. Then, during calibration, the coordinates of the center of the wafer w and the rotated coordinates of the target position for calibration can be obtained by the following equation. That is, the coordinates (X2, Y2) when the coordinates of the origin of the rotation center (XI, Y1) are only rotated by the angle 0 in the clock direction can be X2 = Xlxcose + Ylxsin0, Y2 = - Xlxsin0 + Ylxcos0. Here, the advantages of providing two micro cameras 71, 72 and two macro cameras 81, 82 in the alignment bridge 5A will be described. For the photography of the periphery of the wafer w performed for the center position of the wafer W of -28-200931556, for the groups of (E2, E3) and (El, E4), only the macro cameras 81, 82 Switching can be performed almost simultaneously. Then, after the confirmation of the movements El and E3 of the wafer holder 4A is performed, it is only necessary to move in the Y direction once. In this case, if the macro camera is one, the clip must be sequentially moved to a position corresponding to each of the four points on the wafer W. Therefore, by using the two macro cameras 81, 82, the four-point photography of the peripheral position of the wafer φ W is performed in a short time. Further, Fig. 24(a) shows that when the alignment bridge 5A is mounted with only one micro camera 71 and the optical axis is located at the center of the alignment bridge 5A, the wafer w previously described is photographed. The appearance of PI and P2. Further, Fig. 24(b) shows the appearance of PI and P2 on the wafer W in the above embodiment. As can be seen from the figure, when the distance between the wafer holder 4A and the micro camera is L1, when the number of the micro cameras is two, it is L2, and the moving distance L2 大幅度 is significantly shorter than L1. Further, as one of the operations for performing the positioning of the wafer w and the probe 29, there are observation marks for observing the left and right end portions of the wafer W by the micro cameras 71, 72, or viewing the wafer after the inspection. At the time of the stitching on W, the left and right end portions of the wafer W or the vicinity thereof are present immediately below the micro cameras 71, 72. Fig. 25 shows the movement of the wafer holder 4A at the time of performing such an operation. Now, at a position below the alignment bridge strip 5A, the wafer W exists in such a manner that the center line 70 of the alignment bridge strip 5A overlaps with the center C of the wafer W. From then on, when the camera is to be photographed toward the wafer W by the micro camera -29 - 200931556, the wafer holder 4A is moved in the X direction to the left end of the wafer W directly below the micro camera 71. At this time, the amount of movement of the wafer jig 4A becomes M1. Here, if it is a 300 mm wafer, the M1 IJ becomes 77 mm. Therefore, as shown in FIG. 25, the state in which the center C of the wafer W is located at the center line 70 of the alignment bridge 5A is based on the amount of the wafer W from the state to the left region and the right region. For Ml. In this example, since φ uses a 300 mm wafer and Ml is 77 mm, the total amount of movement of the wafer W is 1 54 mm. Fig. 26 is a view showing that when the microbridge 71 is mounted on the alignment bridge 5A, the wafer holder 4A is moved to the X direction and the crystal is moved after the center of the wafer W is placed directly under the micro camera 71. The left and right end portions of the circle W are located directly below the micro camera 71. Therefore, as shown in Fig. 26, the amount M2 of the wafer W moving to the left side region and the right side region corresponds to the radius portion of the wafer W. In this example, since a 〇300 mm wafer is used, M2 is 150 mm, and the amount of movement of the wafer W is 1/3 mm. 由• As apparent from the above, two micro cameras 71 and 72 are provided by aligning the bridge 5A. With the two macro cameras 81 and 82, the amount of movement of the wafer jig 4A is small. Then, when the two macro cameras 81, 82 are used, it is preferable to be symmetrically disposed with respect to the center line 70. The reason is that when the macro cameras 81 and 82 share the photographing of the left and right areas of the wafer W, the moving area of the wafer jig 4A is symmetrical with respect to the center line 70, when it is used with the -30-200931556 by the micro camera. 71, 72 When the moving regions of the wafer W are overlapped, as a result, the moving region of the wafer holder 4A becomes narrower than when it is asymmetric. Further, the arrangement of the macro cameras 81 and 82 may be asymmetric with respect to the center line 70. The above-described operation of the precision calibration of the device is described mainly on the side of the first ^ inspection unit 2 1 A side in Fig. 1, but the precision calibration is performed exactly the same for the second 'inspection unit 21B'. Further, a series of operations including the precise calibration operation are carried out by the program 152 in the control unit 15. According to the above-described embodiment, the following effects can be obtained. The alignment bridge 5A (5B) of the moving body movable in the horizontal direction between the wafer holder 4A (4B) and the probe card 6A (6B) is provided with two of the wafers for viewing downward. Micro cameras 71, 72 and two macro cameras 81, 82. Then, the micro cameras 71 and 72 are spaced apart from each other, and the macro cameras 81 and 82 are also spaced apart from each other by the G axis of the light. Therefore, in order to obtain the position information of the wafer W, the wafer is w In the case of the wafer holder 4A (4B), the amount of movement of the wafer holder 4A (4B) is small. Therefore, it is possible to reduce the size of the device, and it is also possible to shorten the time required to obtain the position information of the wafer W, which contributes to high productivity. Further, other embodiments of the present invention will be described. Fig. 27 shows the alignment bridge strip 5A and the control unit 15 according to this embodiment. Further, since the alignment bridge 5B has the same configuration, one of the alignment bridges 5 A will be described as a representative. In the alignment bridge strip 5A of the present embodiment, two micro-photographs - 31 - 200931556 machines 71, 72 are movable, and the micro cameras 71, 72 of the two sides are arranged to be connectable and detachable. Then, the drive mechanisms 100, 200 for moving the micro cameras 71, 72 are loaded on the alignment bridge 5A. The drive mechanism 100 is provided with a ball screw 103 and a guide shaft 105 that support both end portions by the support members 101 and 102, and the ball screw 103 and the guide shaft 105 are arranged in parallel with respect to the moving direction of the micro camera 71. Then, on the one end side of the ball screw 103, specifically, the drive motor 104 of the rotary ball screw is connected to the back side of the micro camera 71, and the ball screw 103 is rotated by the drive motor 104, whereby the micro camera 71 It becomes a state of being moved by the state supported by the guide shaft 1〇5. Further, since the drive mechanism 200 has the same configuration as that of the drive mechanism 100, description thereof will be omitted. The drive motors 1〇4 and 2〇4 are connected to the control unit 15, and the control unit 15 controls the drive. In addition to the CPU 151, the program 152, the processing program 153, the operation unit G 154, and the bus bar 155 included in the control unit 15 of the first embodiment, the control unit 15 is provided with a camera movement/workbench via the bus bar 155. 156. The camera moving table 156 is a table corresponding to the distance between the information of the size of the 1C chip-400 and the distance of the micro-camera, and the driving motors 1〇4, 204 are based on the data of the respective stages of the camera moving table 156. drive. In the previously described embodiment, since the positions of the two miniature cameras are fixed, the distance between the P1 and P2 (P3, P4) which are spaced apart from each other in the X direction is inconsistent with the distance of the micro camera (consistently rare), in order to After the photograph P1, the photograph P2' must move the wafer holder 4A slightly. In the case of -32-200931556, the distance between the micro cameras can be adjusted to be the same as the distance between PI and P2 (P3, P4). Since PI and P2 (P3, P4) are the corners of the 1C wafer 400, the distance between PI and P2 (P3, P4) is determined by the size of the 1C wafer 400. Therefore, in the control unit 15, the camera moving table 156 is stored in the memory and the information on the wafer size is input from the input unit at the stage of performing the wafer inspection, and accordingly, the corresponding information is read. Enter the micro-camera of the wafer size ©, and control the drive unit to make the micro-camera move by its separation distance. Then, when the distance between the micro cameras 71, 72 becomes L0, the drive motor 104 is stopped. Accordingly, in the alignment bridge strip 5A of the present embodiment, as shown in FIG. 28, the movement of the two micro cameras 71, 72 can be determined by the size of the 1C wafer 40 0 of the wafer to be photographed. The distance between the two micro cameras 71 and 72 is changed by the distance L0. When the type is implemented in this way, the following effects can be obtained. When the micro cameras 71 and 72 for wafer photographing are detachably connected to each other, the separation distance can be adjusted to two specific points on the wafer W. For example, PI, P2 (P3, P4) in Fig. 20 Since the wafer holder 4A ( 4B ) is moved to a position where a specific point PI ( P3 ) is photographed, the wafer holder 4A ( 4B ) can be stopped and the other specific point P1 can be directly photographed. (P4) and contribute to higher productivity. When the probe card 5A described above is not only subjected to one contact, even if the probe pad 29 is disposed, for example, in a manner corresponding to the electrode pad group of the region divided by the diameter of the wafer W, the probe 29 is divided into two execution crystals. Circle-33-200931556 W and the contact of the probe 29, or in a manner corresponding to the arrangement of the electrode pads of the region in which the wafer W is divided into four, 29 is arranged to sequentially contact the wafer W with the The case of the 4 divided area is OK. At this time, the contact between the probe f and the wafer W is performed by rotating the wafer holder 4A. In the detecting device of the present invention, it is preferable to use a configuration in which the wafer W inspection is completed by the contact of the next to four times. Furthermore, the micro cameras 71 and 72 are in the optical path setting magnification mechanism of the optical system, and even by controlling the zoom mechanism, the angle of view which is slightly lower than the magnification when used as a high camera is obtained. Moreover, the magnification at the time of use as a high magnification is a magnification at which the degree of stitching on the pad can be confirmed, for example, only one electrode pad enters the magnification of the image. After the inspection, when the operator confirms the stitch on the electrode pad, The stitches are not observed from the cameras 81 and 82. In addition, the electrode pads can be confirmed one by one in the micro cameras 71 and 72. It takes a long time, and the intermediate viewing angle can view most of the electrode pads at a time, and the © stitch can be efficiently confirmed. Further, the point for locating the wafer W previously described can be used even if the intermediate viewing angle is used. • In the above, the distance between the optical axis of the first micro camera 71 and the optical axis of the second lithography machine 72 In the above example, it is 14 6 mm, so it is close to the radius of the wafer (150 mm). First, by setting the size between the optical axes close to the wafer diameter, it is possible to make The amount of movement of the table is minimized by placing the wafer W in the camera view of the micro camera 72. In the above, the substrate transfer arm is not limited to the circumferential probe as described above. 1 Upper magnification angle) In the electrode angle, the camera is photographed by the presence or absence of a specific type. 71. It is fixed at -34-200931556. It has three robot arms, even one robot. Further, the 'pre-calibration mechanism is not limited to being incorporated in the substrate transfer arm', and may be provided in the device independently of the substrate transfer arm. At this time, the orientation of the wafer from the substrate transfer arm to the workbench of the pre-calibration mechanism is adjusted to a specific orientation, and the center of the wafer is located at a specific portion of the substrate transfer arm. The wafer is transferred from the workbench to the substrate transfer arm. Further, the probe device to which the present invention is applied can be used for a total of three or more device bodies even if the device body is provided with only one device. [Brief Description of the Drawings] Fig. 1 is a perspective view showing an entire view of an example of a detecting device in a first embodiment of the present invention. Fig. 2 is a schematic plan view showing an example of the above-described detecting device. Fig. 3 is a longitudinal sectional view showing an example of the above detecting device. Fig. 4 is a squint G diagram showing an example of the loading cassette in the above detecting device. Fig. 5 is a schematic diagram showing an example of a wafer transport mechanism in the above-described detecting device. Fig. 6 is a perspective view showing an example of an inspection unit in the above-described detecting device. Fig. 7 is a schematic diagram showing an example of the above-described inspection unit. Fig. 8 is a plan view showing the position of the alignment bridge in the inspection unit. Figure 9 is a plan view showing an alignment bridge bar -35-200931556 according to an embodiment of the present invention. The first drawing is a schematic diagram showing an example of the movement stroke of the wafer jig in the inspection unit. Fig. 11 is a view showing a configuration of an example of a configuration of a control unit used in the above embodiment. - Fig. 12 is a plan view showing an example of the action of the above-described detecting device. ❹ Fig. 13 is a plan view showing an example of the action of the above-described detecting device. Fig. 14 is a plan view showing an example of the action of the above detecting device. Fig. 15 is a plan view showing an example of the action of the above detecting device. Figure 16 is a diagram for explaining the search origin of two cameras. Fig. 17 is an explanatory view showing a method of using the macro camera of the alignment bridge. Fig. 18 is an explanatory view showing a method of using the macro camera of the alignment bridge. Fig. 19 is an explanatory view showing a method of using a macro camera that aligns the bridge strips. Fig. 20 is a view showing an example of arrangement of 1C wafers on the wafer W. Fig. 2 is a first view for explaining the calibration state of the wafer orientation of the present embodiment. Fig. 22 is a second view for explaining the calibration state of the wafer orientation of the present embodiment -36-200931556. Fig. 23 is a third view for explaining the calibration state of the wafer orientation of this embodiment. Fig. 24 is a view for explaining the difference in the moving distance of the wafer jig when the alignment bridge is used in the present embodiment and the conventional example. - Fig. 25 is an explanatory view showing the total amount of movement of the wafer in the X direction when the alignment bridge is used. © Fig. 26 is an explanatory view showing the total amount of movement of the wafer in the X direction when a micro camera is mounted on the alignment bridge. Fig. 27 is a view showing an alignment bridge and a control unit according to another embodiment. Figure 28 is a diagram for explaining the effect of distance adjustment between two miniature cameras. [Main component symbol description] ® 1 : Loading unit 2 : Detection device body * 3 : Wafer transfer mechanism 4A, 4B : Wafer jig 5A, 5B : Alignment bridge bar 6A, 6B : Probe card 10 : Transfer chamber η : 〗Loading 埠12: 2nd loading 埠-37- 200931556 , 21Β : Inspection section probe arm upper arm middle arm lower arm arm part 3 8 : Light sensor miniature camera micro camera micro camera micro camera -38