200931171 •九、發明說明： 【發明所屬之技術領域】 本發明涉及一種用於壓印製程之模仁製造方法，特別 係涉及一種用於紫外線成型壓印製程之模仁製造方法。 【先前技術】 备、外線成型壓印技術（請參見Liang Ying-xin，Wang Tai hong, A New Technique for Fabrication of ❹ Nanodevices—Nanoimpriiit Lithography”，BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a mold core for an imprint process, and more particularly to a method for manufacturing a mold core for an ultraviolet forming imprint process. [Prior Art] Preparation and exterior molding embossing technology (see Liang Ying-xin, Wang Tai hong, A New Technique for Fabrication of ❹ Nanodevices-Nanoimpriiit Lithography),
Micronanoelectronic Technology，2003, Vol. 4-5)係採用紫 外光照射室溫之聚合物實現固化成型之一種壓印技術，特 別適用於大批量、重復性、精確製備微結構。紫外線成型 壓印技術為先製造具有微結構之模仁，然後藉由該模仁進 行壓印過程，最後進行圖形轉移。 先前技術中用於壓印製程之模仁製造方法包括如下步 驟：提供-透光基底；於該透光基底一表面塗覆光阻層； ❹曝光顯影；蝕刻該基板形成微結構圖案；晶種層金屬化； 對該基板進行電鑄；脫模並去除晶種層，形成模仁。 一惟：該製造方法令需藉由蝕刻、電鑄、脫模等步驟才 可完成模仁之製造’製程繁瑣，生產效率低。 【發明内容】 - 有馨於此，提供-種製程相對簡單容易 之用於料製程之模仁製造方法實為必要。 座放率而 一種用於壓印製程之模仁製造方 驟：提供-透光基底；提供—承載基底：於該 200931171 該承載基底之間設置負光阻層；應用直寫技術經由該透光 ，基底對該負光阻層曝光；移去該承載基底；顯影，形成模 仁。 與先前技術相比，本發明之用於壓印製程之模仁製造 方法不需藉由蝕刻、電鑄、脫模等步驟即可完成用於紫外 線成型壓印製程之模仁之製造，製程簡單，提高了生產效 率。 q【實施方式】 請參閱圖1’其為本發明實施例中用於壓印製程之模仁 製造方法之流程圖。該方法包括以下步驟： 提供一透光基底； 提供一承載基底； 於該透光基底與該承載基底之間設置負光阻層； 應用直寫技術經由談透光基底對該負光阻層曝光； 移去該承載基底； 〇 顯影’形成模仁 以下將以製造微小鏡片模仁3為例對本發明實施例中 用於麼印製程之模仁製造方法進行詳細說明。 圖2所不’首先提供一透光基底，該透光基底μ 為石英玻璃。 該透光基底31具有相對之第—表面仏及第二表面 ▲第表面31a及第二表面m上可均無抗反射膜 :亦可至7表面上形成有抗反射膜層。優選地 她例中，於第-表面31a及第二表面训上分別形成有^ 200931171 抗=膜層32a及第二抗反射膜層32b以增加透光性。 ，^ 膜層仏及第二抗反射臈層似所用材 .= 目同。该弟-抗反射膜32a層所用材料可為單—： 包括高折射率與低折射率材料。當心- 時今」曰2a戶斤用材料包括高折射率與低折射率材料 第二：：率材料層與低折射率材料層交替更疊形成於 第一表面3U上。該高折射率材料常用氧化组、氧化欽， 〇該低折射率材料常用二氧切、三氧化二銘。該第_抗反 射膜層32a及第二抗反射膜層划之形成方式相同。^一 電几層广可藉由物理氣相沉積法形成，如熱蒸鑛法、 lit法、離子束濺鑛法；亦可藉由化學氣相沉積法及 其匕薄膜沉積法形成。其中，第—抗反射膜層仏及第二 抗反射膜層32b之厚度可根據實際所需而設計。 如圖3所示，提供一承載基底％，該承載基底％可藉 :塑膠、石英玻璃、等透光材料製得，亦可藉由金屬（例 ©如鐵、銅等）等不透光材料製得，只要所製得之承载基底 3可承载透光基底31即可。本實施财，該承載基底μ 為石英玻璃。 該承載基底33具有相對之第三表面」3a及第四表面 33b。該第三表面33a及第四表面饥上可均無抗反射臈 θ亦可至少一表面上形成有抗反射膜層。優選地，本實 :例中於第一表面33a及第四表面饥上分別形成有第 二抗反射膜層34a及第四抗反射膜層3仆。 該第三抗反射膜層34a及第四抗反射膜層撕所用材 200931171 •料相同。該第三抗反射膜34a声 ，射率材料，亦可包括高折射率二車早-之高折 .:::Tr層與低折:= = = 該=二==材:=，鈦，Micronanoelectronic Technology, 2003, Vol. 4-5) is an imprint technique that uses UV-irradiated room temperature polymers to achieve solidification molding, especially for high volume, reproducible, and precise fabrication of microstructures. Ultraviolet molding The imprint technique is to first fabricate a mold with a microstructure, and then perform the imprint process by the mold, and finally transfer the pattern. The mold manufacturing method for the imprint process in the prior art comprises the steps of: providing a light-transmitting substrate; coating a photoresist layer on a surface of the light-transmitting substrate; exposing and developing the substrate; etching the substrate to form a microstructure pattern; Layer metallization; electroforming the substrate; demolding and removing the seed layer to form a mold. One: The manufacturing method requires the steps of etching, electroforming, demoulding, etc. to complete the manufacture of the mold. The process is cumbersome and the production efficiency is low. SUMMARY OF THE INVENTION - It is necessary to provide a mold manufacturing method for the material processing process in which the process is relatively simple and easy. A mounting ratio for a stamping process: providing a light-transmitting substrate; providing a carrier substrate: a negative photoresist layer is disposed between the carrier substrates in the 200931171; The substrate is exposed to the negative photoresist layer; the carrier substrate is removed; and developed to form a mold. Compared with the prior art, the manufacturing method of the mold core for the imprint process of the present invention can complete the manufacture of the mold core for the ultraviolet forming imprint process by the steps of etching, electroforming, demoulding, etc., and the process is simple. Increased production efficiency. [Embodiment] Please refer to Fig. 1', which is a flow chart of a method for manufacturing a mold core for an imprint process according to an embodiment of the present invention. The method includes the following steps: providing a light-transmitting substrate; providing a carrier substrate; and providing a negative photoresist layer between the light-transmitting substrate and the carrier substrate; and exposing the negative photoresist layer by using a direct-transmission technique through a transparent substrate Removing the carrier substrate; developing the mold core. The method for manufacturing the mold core for the printing process in the embodiment of the present invention will be described in detail below by taking the micro lens mold core 3 as an example. 2 does not first provide a light transmissive substrate, which is quartz glass. The transparent substrate 31 has opposite first surface and second surface. ▲ The first surface 31a and the second surface m may have no anti-reflection film: or an anti-reflection film may be formed on the surface of the seventh surface. Preferably, in her example, the ?200931171 anti-film layer 32a and the second anti-reflection film layer 32b are respectively formed on the first surface 31a and the second surface to increase the light transmittance. , ^ film layer and the second anti-reflective layer are similar to the material used. = The same. The material used for the layer of the anti-reflective film 32a may be mono-: including high refractive index and low refractive index materials. Caution - Nowadays, the material of the 2a household includes a high refractive index and a low refractive index material. Second: The rate material layer and the low refractive index material layer are alternately stacked on the first surface 3U. The high refractive index material is usually oxidized, oxidized, and the low refractive index material is commonly used for dioxic and oxidized. The first anti-reflection film layer 32a and the second anti-reflection film layer are formed in the same manner. A plurality of layers can be formed by physical vapor deposition, such as thermal distillation, lit, ion beam sputtering, or by chemical vapor deposition and thin film deposition. The thickness of the first anti-reflection film layer and the second anti-reflection film layer 32b can be designed according to actual needs. As shown in FIG. 3, a carrier substrate % is provided. The carrier substrate can be made of plastic, quartz glass, or the like, or can be made of an opaque material such as metal (eg, iron, copper, etc.). It is produced that the carrier substrate 3 can be carried as long as it can carry the light-transmitting substrate 31. In this implementation, the carrier substrate μ is quartz glass. The carrier substrate 33 has opposing third and third surfaces 3a, 33b. The third surface 33a and the fourth surface may be devoid of anti-reflection θ θ or at least one surface may be formed with an anti-reflection film layer. Preferably, in the embodiment, the second anti-reflection film layer 34a and the fourth anti-reflection film layer 3 are formed on the first surface 33a and the fourth surface, respectively. The third anti-reflection film layer 34a and the fourth anti-reflection film layer tearing material 200931171 are the same. The third anti-reflection film 34a sound and rate material may also include a high refractive index two-vehicle early-high fold. :::Tr layer and low fold:======== material:=, titanium,
Mm m, 立吐 —乳化一紹。该第三抗反 射膜層34a及第四抗反射臈層3仆之形成 抗反射膜層34a可藉由物理一 〇電將詩、土胳 沉積法形成，如熱蒸鑛法、 法接離子束錢鍵法；亦可藉由化學氣相沉積法及 :匕^沉積法形成。其令’第三抗反射膜層％及第四 抗反射膜層34b之厚度可根據實際所需而設計。 J理解，第-抗反射膜層32a、第二抗反射獏層⑽、 抗反射膜層34a及第四抗反射膜層鳥之材料及形成 不限於本… 0言青參閱圖4,於第二抗反射膜層现上設置一負光阻層 35:，負光阻層35之設置方法為旋塗方法，亦可為噴塗方法。 負光阻層35之厚度可根據實際所需而設計。 設置負光阻層35後，使該負光阻層35位於透光基底 31與承載基底33之第三抗反射膜34a之間形成結構可 理解，該負光阻層35亦可設置於第—抗反射膜層32a上， 亦可位於透光基底31與承載基底33之第四抗反射膜3朴 之間，不限於本實施例，只要該負光阻層35位於透光基底 31與承載基底33之間即可。 200931171 可理解，亦可於第三抗反射膜層34a或第四抗反射膜 層34a上設置負光阻層35，使該光阻層^位於承載基底 33與透光基底31之第—抗反射膜層仏或第二抗反射 32b之間，不限於本實施例，只要該負光阻層％位於透光 基底31與承載基底33之間即可。 請參閱圖5,應用直寫技術經由透光基底3ι對負光阻 層35曝光。該直寫技術可為雷射直寫技術，亦可為電子束 〇直寫技術。該直寫技術藉由能量受調制之雷射光束或電子 束對負光阻層35曝光。曝光後，該負光阻層35具有-曝 光區域351及複數未曝光區域352。本實施例中，藉由能量 受調制之雷射光束對負光阻層35曝光。於曝光過程中，雷 射光束相對於結構4移動，使得能量受調制之光束經由透 光基底31逐漸將曝光區域351曝光。而由於第三抗反射膜 層34a及第四抗反射膜層州之存在，使得可能透過曝光 區域351之光線透過承載基底33而不會被反射，從而避免 〇未曝光區域352被曝光。 請參閱圖6,曝光後移去承載基底幻。為了使未曝光 區域352 1好地溶解於顯影液中，將設置有負光阻層％之 透光基底31進彳了曝後烤。曝後烤可藉由烤箱之熱空氣對 ，、紅外線輕射或熱塾板之熱傳導來進行。本實施例中， 藉由"、、塾板之熱傳導來進行，其中，*共烤溫度為n⑼攝 氏度，烘烤時間為4〜8分鐘。 曝後烤後進行顯影，得到曝光區域351。最後’為了使 曝光區域351更好地黏著於透光基底3ι、減少缺陷空隙、 200931171 耐腐蝕及將曝光區域351中溶劑之含量降到最低，將透光 .基底31硬烤。硬烤亦可藉由烤箱之熱空氣對流、紅外線輻 •射或熱墊板之熱傳導來進行。本實施例中，藉由熱墊板之 熱傳導來進行硬烤，其中，烘烤溫度為185〜2〇〇攝氏度， 烘烤時間為15〜20.分鐘。硬烤後形成微小鏡片模仁3。 可理解，該未曝光區域352之結構可根據需要設計， 如圓柱狀結構、v形槽結構、金字塔型結構或三角錐型結 ❹構等三、維微結構，並不限於本實施例中之微小鏡片結構。。 可理解，上述過程中，是否需要曝後烤或硬烤應根據 實際情況來確定。如果需要曝後烤或硬烤，則供烤溫度及 時間亦應根據實際情況來確定。 β综上所述，本發明確已符合發明專利之要件，遂依法 提出專利申請。惟’以上所述者僅為本發明之較佳實施方 式，自不能以此限制本案之申請專利範圍。舉凡熟悉本案 技藝之人士援依本發明之精神所作之等效修飾或變化，皆 ©應涵蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1係本發明實施例中用於壓印製程之模仁製造方法 之流程圖。 圖2係本發明實施例中用於製造模仁之透光基底之示 意圖。 圖3係本發明實施例中用於製造模仁之承載基底之示 意圖。 - 圖4係設置負光阻層後，使得負光阻層位於透光基底 200931171 與承載基底之間之示意圖。 ， 圖5係對圖4中負光阻層曝光之示意圖 顯影及硬烤後 . 圖6係圖5中移去承載基底、曝後烤、 得到之模仁之示意圖。 【主要元件符號說明】 微小鏡片模仁 3 透光基底 31 ❹% 一表面 31a 第二表面 31b 第一抗反射膜層 32a 第二抗反射膜層 32b 承載基底 33 第三表面 33a 第四表面 33b ©第三抗反射膜層 34a 第四抗反射膜層 34b 負光阻層 35 曝光區域 351 未曝光區域 352 結構 4 11Mm m, standing spit - emulsification. The third anti-reflective film layer 34a and the fourth anti-reflective layer 3 can form an anti-reflective film layer 34a by forming a poem or a soil deposition method by a physical electrolysis method, such as a hot-steaming method or a method of ion beam bonding. The money bond method can also be formed by chemical vapor deposition and: deposition. It allows the thickness of the third anti-reflection film layer and the fourth anti-reflection film layer 34b to be designed according to actual needs. J understands that the material and formation of the first anti-reflective coating layer 32a, the second anti-reflective coating layer (10), the anti-reflection coating layer 34a and the fourth anti-reflection coating layer bird are not limited to this... The anti-reflective film layer is provided with a negative photoresist layer 35: the negative photoresist layer 35 is provided by a spin coating method or a spraying method. The thickness of the negative photoresist layer 35 can be designed according to actual needs. After the negative photoresist layer 35 is disposed, it is understood that the negative photoresist layer 35 is disposed between the transparent substrate 31 and the third anti-reflective film 34a of the carrier substrate 33. The negative photoresist layer 35 can also be disposed on the first layer. The anti-reflective film layer 32a may be located between the transparent substrate 31 and the fourth anti-reflective film 3 of the carrier substrate 33, and is not limited to the embodiment, as long as the negative photoresist layer 35 is located on the transparent substrate 31 and the carrier substrate. Between 33. It is understood that a negative photoresist layer 35 may be disposed on the third anti-reflective coating layer 34a or the fourth anti-reflective coating layer 34a, so that the photoresist layer is located on the first anti-reflection of the carrier substrate 33 and the transparent substrate 31. The film layer 仏 or the second anti-reflection 32b is not limited to the embodiment, as long as the negative photoresist layer % is located between the light-transmitting substrate 31 and the carrier substrate 33. Referring to Figure 5, the negative photoresist layer 35 is exposed via the light transmissive substrate 3ι using a direct write technique. The direct writing technology can be laser direct writing technology or electron beam direct writing technology. The direct writing technique exposes the negative photoresist layer 35 by an energy modulated laser beam or electron beam. After exposure, the negative photoresist layer 35 has an -exposed region 351 and a plurality of unexposed regions 352. In this embodiment, the negative photoresist layer 35 is exposed by an energy modulated laser beam. During exposure, the laser beam is moved relative to the structure 4 such that the energy modulated beam gradually exposes the exposed region 351 via the light transmissive substrate 31. Due to the presence of the third anti-reflection film layer 34a and the fourth anti-reflection film layer state, light that may pass through the exposure region 351 is transmitted through the carrier substrate 33 without being reflected, thereby preventing the unexposed region 352 from being exposed. Please refer to Figure 6. After the exposure, the carrier substrate is removed. In order to dissolve the unexposed area 352 1 in the developer well, the light-transmitting substrate 31 provided with the negative photoresist layer % is exposed and baked. Baked after exposure can be carried out by hot air of the oven, infrared light or heat transfer from the hot plate. In this embodiment, the heat conduction is performed by ", and the seesaw, wherein the total baking temperature is n (9) degrees Celsius, and the baking time is 4 to 8 minutes. After the exposure and baking, development is carried out to obtain an exposed region 351. Finally, in order to make the exposed region 351 adhere better to the light-transmitting substrate 3, reduce the defect void, the corrosion resistance of the 200931171, and the content of the solvent in the exposed region 351 are minimized, the light-transmitting substrate 31 is hard-baked. Hard baking can also be carried out by hot air convection in the oven, infrared radiation or heat transfer from the thermal pad. In this embodiment, the hard baking is performed by heat conduction of the hot pad, wherein the baking temperature is 185 to 2 〇〇 Celsius, and the baking time is 15 to 20. minutes. After hard baking, a tiny lens mold core 3 is formed. It can be understood that the structure of the unexposed area 352 can be designed according to requirements, such as a cylindrical structure, a v-shaped groove structure, a pyramid structure or a triangular pyramid structure, and is not limited to the embodiment. Tiny lens structure. . It can be understood that in the above process, whether it is necessary to expose or bake after exposure should be determined according to the actual situation. If it is necessary to bake or hard-bake after exposure, the temperature and time of roasting should also be determined according to the actual situation. In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application in accordance with the law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method for manufacturing a mold core for an imprint process in an embodiment of the present invention. Figure 2 is a schematic illustration of a light transmissive substrate for making a mold core in an embodiment of the present invention. Figure 3 is a schematic illustration of a carrier substrate for making a mold core in an embodiment of the present invention. - Figure 4 is a schematic diagram of the negative photoresist layer between the light-transmissive substrate 200931171 and the carrier substrate after the negative photoresist layer is disposed. Figure 5 is a schematic view showing the exposure of the negative photoresist layer in Figure 4 after development and hard baking. Figure 6 is a schematic view of the mold core removed from the carrier substrate after exposure and baked. [Description of main component symbols] Micro lens mold core 3 Light-transmissive substrate 31 ❹% One surface 31a Second surface 31b First anti-reflection film layer 32a Second anti-reflection film layer 32b Carrier substrate 33 Third surface 33a Fourth surface 33b © Third anti-reflection film layer 34a Fourth anti-reflection film layer 34b Negative photoresist layer 35 Exposure region 351 Unexposed region 352 Structure 4 11