TW200937671A - Semiconductor light-emitting device - Google Patents

Abstract

The invention discloses a semiconductor light-emitting device, which includes a substrate, a first conductive type semiconductor material layer, a second conductive type semiconductor material layer, a light-emitting layer, a first electrode, a second electrode, and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate and has an upper surface which includes a first region and a second region distrinct from the first region. The first electrode is formed on the first region. The light-emitting layer and the second conductive type semiconductor material layer are formed on the second region. The bump structures are formed on the upper surface of the first conductive type semiconductor material layer and between the first region and the second region. At least one recess is formed in the sidewall of each bump structure. Alternatively, the sidewall of each bump structure has a curved contour.

Description

200937671 IX. Description of the invention: [Technical field of invention] The present invention relates to a semiconductor light-emitting element (4) He (7) Qin 攸 % ht_ semi-conducting with high light extraction efficiency [Prior Art] 今 Today half body light 70 pieces ( For example, the application field of 'light-emitting diodes' has been illuminated, mobile phone screen backlight modules, and vehicle lighting systems have been widely used in the field of remote control, and all of them have seen half-light-emitting components: let the semiconductor light-emitting components be as The ground ensures a higher energy consumption than the monthly energy f. Therefore, for the semiconductor light-emitting element efficiency. From 0 outside the neutron efficiency (10) temal qua_m neighboring denier; the external quantum efficiency of the bulk light-emitting element and its own internal grease is emitted to the surroundings The loss caused by the air or the encapsulated epoxy tree is determined by the fact that when the Korean shot leaves the component inside the component, one of the main reasons for the above-mentioned knowledge is due to the shape coefficient. Light in the material has a high refractive index buckle - and can not emit surface to produce total reflection _ her ction) External quantum efficiency is also followed by & efficiency improvement' then the semiconductor light-emitting element shown i S: a well-known light-emitting diode 1. As shown in the figure - the hairpin and the electrode 18. In order to turn on the p々pe nitride ^ 200937671 16 and the N-type gallium nitride 12 to operate the light-emitting diode i, one of them The life pole 18 is formed on the P-type gallium nitride 16 and the other electrode 18 is formed on the N-type gallium nitride 12. Before forming another electrode 18, the polar body 1 is required to pass through an etching process. Partially etching the p_ty tantalum nitride region and suppressing Pe gallium nitride 12. After that, the other two electrons are on the exposed portion of the gallium 12 by the N-type. However, as shown in FIG. The light-emitting diode is partially on the side, so that the light-emitting diode is not only greatly reduced in light output, but also has a much lower luminous efficiency. Although Lang has so far, there are many different structures of light-emitting diodes and two light-emitting diodes. The extraction efficiency and the wide and uniform light emission of the main body have been continuously studied. The main arm of the present invention is to provide a semi-conductor to solve the above problems. [Inventive] The present invention One category is to provide a semiconductor light-emitting element. And the money-emitting mosquito is broad and uniform. In one embodiment of the present invention, the semiconductor substrate (1), the first-conductivity type material layer, the semiconductor material layer, the light-emitting layer, the first- a second electrode and a plurality of bump structures. The first conductive type semiconductor material layer is formed on the substrate type semiconductor material layer having an upper surface, and the upper surface = the f = and different from the -d The second series of the first electrode is formed on the light-emitting layer in the second region, and the second electrode is formed on the second semiconductor layer of 200937671. Into the conductor material A, the complex structure is formed in the first-conducting type half. The surface and the first side and the second side of the second area, or two recesses, are formed in each of the convex structures substantially in the form of a concrete structure. The side wall has a curved profile on the double. BRIEF DESCRIPTION OF THE DRAWINGS Advantages and spirits will be further understood by the following detailed description of the invention and the appended claims.

[Embodiment] FIG. 2A is read. Fig. 2A is a cross-sectional view showing a half V body light-emitting element 2 according to an embodiment of the present invention. As shown in FIG. 2A, the semiconductor light emitting device 2 includes a substrate 2, a first conductive type semiconductor material layer 22, a light emitting layer 24, a second conductive type semiconductor material layer 26, a first electrode 30, and a second electrode 32. And a plurality of convex structures 28 ° In practical applications, the substrate 20 may be glass (si〇2), germanium (Si), germanium (Ge), gallium nitride (GaN), gallium arsenide (GaAs), phosphating. Gallium (GaP), aluminum nitride (A1N), sapphire, spinel, aluminum oxide (Al2〇3), tantalum carbide (SiC), zinc oxide (ZnO), magnesium oxide (MgO) ), lithium aluminum oxide (UAl〇2), lithium gallium dioxide (UGa02) or magnesium aluminum oxide (MgAl204), but not limited thereto. In one embodiment, the first conductive type semiconductor material layer 22 and the second conductive type semiconductor material layer 26 may be made of a III-V compound semiconductor material. 8 200937671 Group III chemical elements in III-V compound semiconductor materials may be elements such as Ming (A1), gallium (Ga) or indium (In). The Group V chemical element in the III-V compound semiconductor material may be an element such as nitrogen (N), phosphorus (P) or arsenic (As). In this embodiment, the first conductive type semiconductor material layer 22 and the second conductive type semiconductor material layer 26 may be made of gallium arsenide.

A conductive semiconductor material layer 22 is formed on the substrate 20, and the conduction type may be an N-type. In other words, the first conductive type semiconductor material layer 22 is an N-type gallium nitride contact layer. The first conductive type semiconductor material layer 22 has an upper surface 220, and the upper surface 220 includes a first region 2200 and a second region 2202 different from the first region 2200. The first electrode 30 is formed on the first region 2200' and the light-emitting layer 24 is formed on the second region 2202. The first electrode 30 is an N-type electrode. The second conductive type semiconductor material layer 26 is formed on the light-emitting layer %. Corresponding to the first conductive type semiconductor material layer 22, the second conductive type semiconductor material layer 26 is a P-type, that is, a p-type gallium nitride contact layer. The g-electrode 32 may be formed on the second conductive type semiconductor material layer %, and the electrode 32 is a P-type electrode. #一 As shown in Fig. 2A, a plurality of convex structures 28 are formed on the upper surface 22 of the first type semiconductor material layer 22 and between the second and second regions. In practical applications, a convex structure 28 from the top ^ ^ ' may be cylindrical, elliptical, and polygonal. In particular, at least - 丨uu 阽 υϋ is formed on the side wall of each convex name 28 . In this embodiment, 'every convex structure 28 === mineral tooth shape' thus forms a plurality of depressions 2_^m_〇1〇gy) on the side walls thereof. He read the picture two. Fig. 2 is a cross-sectional view showing a semiconductor light emitting element 2 according to a specific embodiment of the present invention. In another embodiment, the side walls of each of the convex structures 28 may have a generally arcuate profile. Assuming that the sidewall of each convex structure 28 has a straight contour and the angle between the sidewall and the upper surface 220 of the first conductive type semiconductor material layer 22 is equal to 90 degrees, the light emitted by the light-emitting layer 24 will be limited to The convex structure % is reflected back and forth between the main body of the semiconductor light emitting element 2. However, as shown in Figs. 2a and 2B, since the side wall of each of the convex structures 28 in the present invention has

There is a rough surface or a solitary contour, so that the angle between the side wall and the upper surface 22 of the first conductive type layer 22 may be greater than or less than 90 degrees. Thereby, the light emitted by the light-emitting layer 24, especially the side light, can be reflected by the sidewall of the convex structure 28 and change its traveling direction after being incident on the convex structure 28 to increase the light output from the semiconductor light-emitting element 2. ^ (observation side) The probability of shooting. In addition to the improvement of the side light extraction rate, assuming that the light-emitting surface of the semiconductor light-emitting element 2 faces upward, the light emitted from the light-emitting layer toward the inside of the semiconductor light-emitting element 2 is reflected and is incident on the plurality of convex structures 28, and the light is emitted. The wire surface is guided by the convex structure 28. In addition, if a plurality of convex structures 28 are evenly distributed on the upper surface 220 of the first conductive semiconductor material layer 22, the semiconductor light emitting element 2 can produce a wider and uniform light-emitting layer 0 in order to avoid the light-emitting layer 24 The emitted light is substantially equal to or higher than the height of the first electrode Ϊ π π π ί 28, and the surface 22G of the semiconductor material 2 is the reference surface, the first electrode 3() of the county face; having f D1 'the top surface 28 () of each of the convex structures 28 has a height, and D2 may be substantially equal to or greater than the first electrode 30 with a dose of $10 200937671. 々凊 See Figure 3. Figure 3 is a schematic illustration of the composition of two convex structures 28 of a f-female according to the present invention in a specific embodiment. FIG. 3 illustrates an example in which a non-convex structure 28 can be composed of a first conductive type semiconductor material layer, a second conductive type semiconductor material layer 26, and a light-emitting layer 24. Ii, each of the convex structures 28 may be entirely composed of the first conductive type semiconductor material. It is to be noted that, in order to prevent the light emitted by the semiconductor light-emitting element 2 from being absorbed, the light-emitting layer 24 of each of the convex structures in Fig. 3 can be further removed. (4) In the specific embodiment, as shown in Fig. 4A, in order to make the light more per convex structure 28, it can be made of a specific material having a refractive index of more than 1. The seeding material may be IT〇, si〇2, SiN, Zn〇, ==ide; BCB, SQG, Ιη〇, Sn〇, and a compound semiconductor semiconductor material, but not limited thereto. M-v family =, group m chemical elements and ν family in the rotating material. (4) The 11th chemical element of the compound compound towel may be 铍

Hi i, Liu thief away) #元素, n_VI wei compound In the private 兀 兀 can be oxygen (9), sulfur (8) drink (Se) _ (Te) and other elements. The light extraction efficiency by the difference in refractive index between air and a specific material can be more effectively improved. From the refractive index greater than the ambient refractive index (such as air folding = this = square, to avoid absorption by the first electrode 30, in order to increase the light output efficiency of the semi-conducting (four) ° 2. The cattle conductor first το 2 itself in another In a specific embodiment, each of the convex splicing materials is made. Or 'as shown in FIG. 4B, the other body is formed; the ribs a convex structure 28 may include the first structural layer 282 ς and m 200937671 28. As with the composition of the convex structure 28 in FIG. 3, the first structural layer 282 may be composed of the first conductive type semiconductor material layer 22, the second conductive type semiconductor material layer 26, and the light emitting layer 24. Alternatively, The first structural layer 282 may be entirely composed of the first conductive type semiconductor material layer 22. The second structural layer 284 is formed on the first structural layer 282 and is made of a specific material having a refractive index greater than that of germanium, and the material is selected. As mentioned earlier. ❹

In order to improve the light extraction efficiency, in a preferred embodiment, if the upper surface 22 of the first conductive type semiconductor material layer 22 is used as a reference surface, the surface 300 of the first electrode 30 has a height 〇1, each of which The top surface 28 of the convex structure 28 has a height D2' and m can be substantially equal to m or greater than m: the light emitted by the avoidance 24 is absorbed by the first electrode 30. In addition, the top surface lion of the ϋ, Γ layer 282 has a high degree of yin, and the surface of the first conductive type guide (four) layer 26 has a height. The above can be equal to D3 or greater than D3. Big f participation in five. Figure 5 shows the top view of the hair cast according to the hair of the hair. In practical applications, a plurality of convex structures 28 layers 24 (not shown in FIG. 5) are used to emit light from the light-emitting layer 24 to the light-emitting surface of the semiconductor light-emitting element 2. Preferably - body = line * = the plurality of convex gas structures 28 can be arranged as inner and outer "two»>, and the inner and outer two layers of annular rings are staggered from each other to be dialed as far as possible to layer 24 In addition, a plurality of convex structures 28 may also be used to form a surface 22 of the semiconductor material layer 22 to ensure that the light extraction efficiency can be improved. See Figure 6A and Figure 2 Figure 6. The top surface 280 of the figure VIII is further formed into at least one view. Figure 6B shows the convex structure of Figure 2B. The surface of the cross section 280 200937671 side Outside the wall & ^^=8 trap / 8 (^ section view. That is to say, in addition to the surface shape 或者. Or ^ shape = surface 280 can also have a rough outline at the same time. The surface morphology of the contour chain which may have an arc or an arc is a half-section of the paste 34 according to the embodiment of the present invention. ❹ 26, the surface of the light-emitting surface 24 = 〇, = and coated with the second conductivity type The semiconductor material layer is transparent and electrically conductive. In this embodiment, on the layer 34: after the real Hi, the middle brother; The transparent conductive layer 34 can be formed of a transparent conductive layer, a mesh conductive guide layer, and the transparent conductive layer 34 can be made of a thin metal, but does not turn __) Wei Lin _), and the semiconductor light-emitting element of the moon can be borrowed from the 屮 * Γ structure Directly guiding the light emitted from the inside of the rotating light-emitting element: the light extraction efficiency of the 5-lifting light-emitting element and the generation of a broad and semi-inductive guide to limit the invention. Conversely, ===围=变==安= The invention is intended to apply to the broad interpretation of this supplement, so that it covers all possible modifications and equivalence arrangements.

14 200937671 [Simple description of the diagram] Figure 1 shows a conventional light-emitting diode. Figure 1A is a cross-sectional view of an element in accordance with the present invention. Semiconductor Light Emitting of a Specific Embodiment Figure 2B is a cross-sectional view showing an optical element in accordance with the present invention. Force - the semiconductor of a specific embodiment

Figure 3, Figure 4A and Figure 4B are schematic diagrams showing the composition of the structure. g>, x according to each of the convex diagrams of the present invention, the top view of the swivel light-emitting element according to the present invention, and the A-line I will not be in FIG. 2a & this muse SW, Λη Τ ^ The top surface of the convex structure is further shaped by at least one of which is thin. The $r domain is formed in one step at least in the top surface of the convex structure. Fig. 7 is a diagram showing the sulfur cut-off of the conductive layer in accordance with an embodiment of the present invention. · ^体U凡 [Main component symbol description] 1: Light-emitting diode ίο : Substrate 12 ·· N-type gallium nitride 14 : Light-emitting region 16 · ' P-type gallium nitride 18 : Electrode 2 : Semiconductor light-emitting device 20: substrate 15 200937671 22 : first conductive type semiconductor material layer 24 : light emitting layer 26 : second conductive type semiconductor material layer 28 : convex structure 30 : first electrode 32 : second electrode 34 : transparent conductive layer 220 Upper surface 282: first structural layer 284: second structural layer

260, 280, 300, 320, 2820: top surface 2200: first area 2202: second area 2800, 2802: depression

Dl, D2, D3, D4: Height Θ : Angle ❿ 16

Claims (1)

200937671 X. Patent application scope·· Including: 1. A substrate for a semiconductor light-emitting device; a semiconductor material layer 'the first-conducting type semiconductor material sound on the right-shaped substrate> 'the first conductive type semiconductor material 1 and ^ The first region is formed on the first region, and the light-emitting layer is formed on the second region; the second conductive layer Type semiconductor - ί ΐίίι The ^ two electric town 'shaped wire two material type semi-conducting = convex S::. '(4)-piece; the casting light-emitting element according to item 1 of the profit-making range, the power-on of each of the two-degree conductivity type half-material layers in i =====face height or lower The second top surface of each of the convex structures. The first top table ^ The semiconductor light-emitting convex structure described in claim 3 is made of a material having a refractive index greater than 1 and is selected from the group consisting of ITO, Si 〇 2, SiN, ZnO, polymide, One of a group consisting of BCB, SOG, InO, SnO, a ni-V compound semiconductor material, and a π-VI compound semiconductor material. 5. The semiconductor light-emitting device of claim 1, wherein each of the convex structures comprises: a first structural layer; and a second structural layer formed on the first structural layer and having a refractive index greater than 1 made of one material, and the material is selected from the group consisting of ITO, SiO 2 , SiN, ZnO, polymide, BCB, S0G, InO, SnO, an in_v compound semiconductor material, and an n-VI compound semiconductor material. One of the groups. 6. The semiconductor light-emitting device of claim 5, wherein the first top surface of one of the first electrodes is substantially the same as or lower than each of the second top surfaces of each of the convex structures. The second top surface of the structure. 7. The semiconductor light emitting device of claim 6, wherein a third top surface of the first structural layer is substantially the same as or lower than a fourth top surface of the second conductive type semiconductor material layer. And the fourth top surface of the second conductive semiconductor material layer. 8. The semiconductor light-emitting device of claim 1, wherein each of the convex structures is made of an insulating material. 9. The semiconductor light-emitting device of claim 1, further comprising an electrically conductive layer formed on the upper surface of the first conductive semiconductor material layer and covering the second a layer of a conductive semiconductor material, the luminescent layer, and the plurality of convex structures. 10. The semiconductor light-emitting device of claim 1, wherein at least one of the 18, 2009, 37,671 recesses is formed on the top surface of each of the convex structures. U. The semiconductor article of claim 1, wherein the top surface of each of the convex structures further has an arcuate profile. The semiconductor light-emitting device according to Item 1, wherein the first-conducting type is a Ν-type and the second-conducting type is a ρ-type. 13H. The illuminating element according to Item 1, wherein the substrate is made of glass, ruthenium, iridium, gallium nitride, gallium arsenide, gallium phosphide, nitriding, blue, stone, and sharp. Spar: a combination of trioxide, carbonization, zinc oxide, oxidation followed by: oxygen: lithium aluminum hydride, lithium gallium dioxide, and magnesium tetra-magnesium. 14. A semiconductor light emitting device comprising: a substrate; a first conductive (tetra) semiconductor material layer, the first conductive type on the first conductive type semiconductor substrate; the conductive material layer having an upper surface, and The upper surface is different from the second region of the first region; the first electrode is formed on the first region; and the light emitting layer is formed on the first region a second conductive type semiconductor material layer, the second transfer material layer is formed on the light emitting layer; + a conductor - a second electrode, the second electrode is formed on the first material layer; And a plurality of convex structures are formed on the upper surface of the plurality of convex structures of the semiconductor material layer and between the n two domains and the second region, wherein each of the convex junctions; 19 200937671 substantially Has an arcuate outline. 15. The semiconductor light-emitting device of claim 1, wherein the surface of each of the surfaces of the semiconductor material and the surface of the first conductive type semiconductor material layer is greater than or less than 9 degrees. 16. The semi-conductive optical component of claim 14, wherein the second surface of the second surface is substantially the same as or lower than each of the second top surface of each of the convex structures. The second top surface. The semiconductor light-emitting device according to Item 16, wherein each of the two white rms is made of a material having a refractive index greater than 1, and the material is k free ITO, SiO 2 , siN, Zn 〇, p 〇 lymide , the BCB, the s〇G, and the -11, wherein the convex structure of each of the convex structures comprises: a first structural layer; and a second structural layer On the first structural layer and made of a material having a refractive index greater than 1, and the material is selected from the group consisting of ruthenium, Si 〇 2, SiN, ZnO, p〇iymide, BCB, SOG, InO, SnO, One of a group consisting of a πΐ-ν compound semiconductor material and an H_VL^ compound semiconductor material. The semiconductor light-emitting device of claim 18, wherein the first top surface of the first electrode f is substantially the same as or lower than each of the second top surfaces of each of the convex structures. The second top surface. The semiconductor light-emitting device of claim 19, wherein a third top surface of the first-type structural layer is substantially higher or lower than the second conductive-type semiconductor material 20 200937671 ft And the fourth top surface of the second conductive semiconductor material layer. The rotating light-emitting element of item 14, wherein each of the convex structures is made of an insulating material. The semiconductor light-emitting device of claim 14, further comprising: a 'electric layer' formed on the upper surface of the first conductive semiconductor and covering the second conductive type a layer of a semiconductor material, the luminescent layer, and the plurality of convex structures. The slewing light-emitting element of claim 14, wherein at least one recess is formed in a top surface of each of the convex structures. 24. The semiconductor light-emitting device of claim 14, wherein the top surface of each of the convex structures further has an arcuate profile. The slewing light-emitting element of claim 14, wherein the first-specific type is a Ν-type and the second conductive type is a ρ-type. The conductor is a light-emitting element selected from the group consisting of glass, bismuth 26, and the scope of the patent, wherein the substrate ^, blue, stone, spinel's trioxide, carbonized hard, oxidized, oxidized group gallium, and four The two sides of magnesium oxide - erbium, gallium nitride, gallium arsenide, scalar gallium, nitriding 21