200935469 九、發明說明： 【發明所屬之技術領域】 本發明係提供-㈣容補償設計，制找 ::容補償結構及其方法，其 通，且能減対同生勤差異。 匹配的問 【先前技術】 按，現今半導體微機 構，例如.不可不同的半導體微型結 彈簧、連桿、齒剛雕 、、口冓或疋一些可動的 將上述不同的結構和相關 ^月直運動或是撓性形變）等結構。 t種不同的铸體藉由製造方法提昇· 進—步導體微機電系統的_指標，也是未來 -------- 的半導體電路相互整合，即可構 不同的功能，是未來半 —…〜叮微機械結構各種 Ο 目前微機電感測器及 縮晶片之_—# 枝_料製作電容，利用微 求，例如.將：广轉錢機電純_)的各種工作需 風、製作電ΐ轉為電容變化的微嶋統麵麥克 等約支術。；開關超缚型（Ultra耻1)電容式微感測器 5 200935469 但疋，由於習用製作微機電系統(MEMS)技術需要在矽基底 上沈積出電路佈局；而前述佈局之後又經常必須採用侧技術 來完成設計上的需求，進而產生下述問題： 其—’微機H_EMS)技術多數需要進行綱，例如： 祕刻、乾糊和犧牲層（咖出丨也1絲等作業， 〇 雖酿刻技術是—種快速有效的製程，但是，對於電容設計而 °在_巾遇到的最大困境就是無法精確掌握麵的一致 性’而姓_—致性卻t大幅影響微機電系統(MEMS)内電容設 计的匹配性。 其二，微機電系統(MEMS)内的電路佈局技術是採用沈積法 或曝光顯影法製作，但是無論是沈積法或曝光顯影法，都同樣 料確保電容第-側電容板與第二側電容板之間的間距完全 ❹—致，多數會產生細微的差異，更會影響微機電系統(_)内 電容設計的匹配性。 第-種習用技術如第1圖所示，此習用技術是於一石夕基底 1〇上形成微機電結構11，而在微機電結構11之中包人带六一 12 ’該電容12具有第-侧電容板121及第二侧電容 =22 側電容板121及第二側電容板122的面積為A，_ „ 一者之間有預設 的間距d ’此習用設計的電容值為： 200935469 C= e x A/d 。 這個公式中的C是指電容值、e是指介電係數。 因此，此習用第一侧電容板121及第二側電容板122的面積 A必須非常精確-致，而第—側電容板121及第二側電容板您 的間距d(或稱介電層厚度)也必财f精確，酬不僅會產生 t容不匹配（不同於預設值）的問題，也會造成不同批次或同一 • 批次内的良率下降； © 但受限由於沈積法及曝光顯影法的技術未能完全掌握如 此微小的差異’經f發生第—㈣容板121及第二側電容板122 的面積A出現不-致落差，或是第一側電容板121及第二側電容 板122的間距d產生過大差異，因此習用的電容產品仍有極待改 良的困境。 Ο 另種習用技術如第2圖所示，係一種生產懸浮微機電結 構的技術’纟同樣是於一石夕基底10上形成微機電電容12，該電 容12具有第—侧電容板121及第二側電容板122，第一側電容板 121及第二侧電容板122的面積為A，二者之間有預設的間距d， 且利·刻技術在第一側電容板121及第二側電容板122之間 形成懸子空間B，此習用設計的電容值同樣為：〇 e X A/d。 廷個公式中的C是指電容值、e是指介電係數。 此第二種習用第-側電容板121及第二側電容板122的面 7 200935469 積A必須非常精確一致，而第一側電容板12ι及第二側電容板 122的間距d(或稱為介電層厚度）也必須非常精確，否則不僅會 產生電容不匹配（不同於預設值）的問題，也會造成不同批次或 同一批次内的良率下降；此習用也受限由於沈積法及曝光顯影 法的技術未能完全掌握如此微小的差異，經常發生第一側電容 板121及第二侧電容板122的面積a出現不一致落差，或是第一 0 侧電容板121及第二側電容板122的間距d產生過大差異，因此 習用的電容產品仍有極待改良的困境。 更重要的是，製造懸浮微機電結構的懸浮空間B之後，第 一種習用會發生第3圖的狀況，由於第一側電容板121及第二側 電容板122之後沒有連結，且懸浮空間B的將釋放上方懸浮的部 位（内含第一側電容板122 )，而此部位因為殘留應力影響會造 成結構翹曲，造成第一側電容板121及第二側電容板122之間增 〇 加另一間距D，該第一侧電容板121及該第二侧電容板122的間 距d變大為間距d+間距D，此時，第二種習用的真正電容值為： e X A/(d+D); 而且前述電容值會跟原本〇 e x 容值需求產生極 大差異，故此第二種習用電容設計更有迫切改進的需求。 …有鑑於斯，本案發明人乃經詳思細索，並積多年從事各種 半導體微機電產品料與半導體研究生產的經驗，開^出一種 微機電之電容婦結構及財法，雜歧彳績辟電容值的 8 200935469 條件、提高良率及匹配性。 【發明内容】 本心月目的之在於提供一種微機電之電容補償結構及 其方法’確料關償辟電容_條件、提^料匹配性。200935469 IX. Description of the invention: [Technical field to which the invention pertains] The present invention provides - (iv) capacity compensation design, system finding and capacity compensation structure and method thereof, and can reduce the difference between the same and the living. Matching question [Prior technology] Press, nowadays semiconductor micro-mechanisms, for example, different semiconductor micro-junction springs, connecting rods, toothed edging, cymbals or cymbals, some moving the above different structures and related movements Or flexible deformation) and other structures. t different kinds of castings are improved by the manufacturing method, and the _ index of the step-and-conductor MEMS is also the future integration of semiconductor circuits, which can be used to construct different functions. ...~叮Micro-mechanical structure of various Ο At present, the microcomputer inductive measuring device and the shrinking chip _—# __ material making capacitors, using micro-seeking, for example, will: wide-ranging money electromechanical pure _) various work needs wind, making electricity ΐ 为 为 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容Switch Super-Block (Ultra Shame 1) Capacitive Micro Sensor 5 200935469 However, due to the customary fabrication of micro-electro-mechanical systems (MEMS) technology, it is necessary to deposit a circuit layout on a germanium substrate; To complete the design requirements, the following problems arise: - Most of the 'micro-machine H_EMS' technology needs to be carried out, such as: secret engraving, dry paste and sacrificial layer (Caf and 1 also 1 wire, etc. Yes - a fast and efficient process, but for the capacitor design, the biggest difficulty encountered in the _ towel is that it can not accurately grasp the consistency of the surface 'and the surname _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The matching of the design. Second, the circuit layout technology in the microelectromechanical system (MEMS) is made by deposition method or exposure development method, but whether it is deposition method or exposure development method, it is also ensured that the capacitor side-side capacitor plate The gap between the capacitor plate and the second side of the capacitor plate is completely ambiguous, and most of them will produce subtle differences, which will affect the matching of the capacitor design in the MEMS (_). The first technique is the first one. As shown, the conventional technique is to form a microelectromechanical structure 11 on a radiant substrate 1 and a hexa 12' in the MEMS structure 11. The capacitor 12 has a first side capacitive plate 121 and a second side capacitor. =22 The area of the side capacitive plate 121 and the second side capacitive plate 122 is A, _ „ There is a preset spacing d between the ones. The capacitance value of this conventional design is: 200935469 C= ex A/d. C refers to the capacitance value, and e refers to the dielectric constant. Therefore, the area A of the first side capacitive plate 121 and the second side capacitive plate 122 must be very accurate, and the first side capacitive plate 121 and the second Side Capacitor Board Your spacing d (or thickness of the dielectric layer) must also be accurate, not only will the problem of t-missing (unlike the preset value), but also different batches or the same batch. The yield within the product decreases; © However, due to the deposition method and the technique of the exposure development method, such a small difference is not fully grasped, and the area A of the capacitor plate 121 and the second side capacitor plate 122 does not occur. The drop difference, or the distance d between the first side capacitive plate 121 and the second side capacitive plate 122 is excessively large. Therefore, the conventional capacitor products still have a dilemma to be improved. Ο Another conventional technology, as shown in Fig. 2, is a technique for producing a suspended microelectromechanical structure, which is also a microelectromechanical capacitor 12 formed on a stone substrate 10. The capacitor 12 has a first side capacitive plate 121 and a second side capacitive plate 122. The area of the first side capacitive plate 121 and the second side capacitive plate 122 is A, and there is a preset spacing d between the two, and The engraving technique forms a suspension space B between the first side capacitive plate 121 and the second side capacitive plate 122. The capacitance value of this conventional design is also: 〇e XA/d. C in the formula refers to the capacitance value, e refers to the dielectric constant. The surface 7 200935469 product A of the second conventional first-side capacitive plate 121 and the second-side capacitive plate 122 must be very precisely aligned, and the distance d between the first-side capacitive plate 12 and the second-side capacitive plate 122 (or referred to as The thickness of the dielectric layer must also be very precise, otherwise not only will the capacitance mismatch (different from the preset value) be caused, but also the yield drop in different batches or in the same batch; this practice is also limited by deposition. The technique of the method and the exposure development method fails to fully grasp such a slight difference, and the area a of the first side capacitive plate 121 and the second side capacitive plate 122 often has an inconsistent drop, or the first 0 side capacitive plate 121 and the second The pitch d of the side capacitor plates 122 is excessively different, so the conventional capacitor products still have a dilemma to be improved. More importantly, after the suspension space B of the suspended microelectromechanical structure is fabricated, the first case occurs in the state of FIG. 3, since the first side capacitor plate 121 and the second side capacitor plate 122 are not connected after, and the floating space B The upper suspended portion (containing the first side capacitive plate 122) will be released, and the structure will be warped due to residual stress, resulting in an increase between the first side capacitive plate 121 and the second side capacitive plate 122. The distance d between the first side capacitive plate 121 and the second side capacitive plate 122 becomes larger than the pitch d + the pitch D. At this time, the second practical true capacitance value is: e XA/(d+ D); And the aforementioned capacitance value will be greatly different from the original 〇ex capacity value requirement, so the second conventional capacitor design has more urgently improved requirements. ... In view of this, the inventor of this case has carefully studied and accumulated years of experience in various semiconductor MEMS products and semiconductor research and production, and developed a micro-electromechanical capacitor structure and financial method. 8 200935469 conditions for capacitance values, improved yield and matching. SUMMARY OF THE INVENTION The purpose of the present invention is to provide a MEMS compensation structure and a method for determining the _condition and material matching.
為達成前述目的，本發明之微機電之電容補償結構係於-石夕基底上表面形成絕緣層，該絕緣層_作有電容，該電容其 中一側至少包含-基礎電容板及至少—補償電容板，另一側則 為一完整電容板，前述基礎電容板、補償電容減完整電容板 皆彼此獨立且具備向外導通之金屬電路； 藉此’本發明可以依照需求隨時開關補償電容板，致使完 整電容板馳對魏合電额(顧電容板及爾電容板）的 :積改良’以供微調電容值’避免電容不匹配的問題，且能減 乂不同生產批次間的差異。 值得一提的是，前述基礎電容板 獨立且且備向料、顺電容板彼此 有門/ΓΓ 而二者之金屬電路向外連接 是】物是㈣編棚㈣路，也可以 二玲卜城__，此_之設龍 成明，亚無需特別贅述。 又议仰心 200935469 本發明目的之二在於提供— 台匕右4 〃機電之電容補# b有效_f彡響電容值的條件、提高良率及匹貝 方法，確 配性。 為達成前述目的，本發明妓杯 側至少包含-基礎電容板及至少—補償電t:機:⑽^ 板與補償電容板彼此獨立狀備 ‘、述基礎電容 電容板的開關調控電容匹配。 i之金屬電路，藉補償 Ο 〇 =，她可顧f麵日摘賴 避免電容不匹配的問題，且― 前述微機電之電容補償結射，該電容其中_侧至少包含 抒j屯*板及至少—補償電容板，而本發明所指之至少-補 板的數！含蓋若干個至多數個；另外，具有複數補償電 么反％，且該各顯電容板的尺寸彼此各*_。 例如.當本㈣具備—编償電容板時，_償電容板的 貝尺寸為A2 ’基礎電容板的面積A1，此時，本發明的電容 值算式可以依需求互換如下： C- e X Al/d 或 〇 e x(Al+A2)/d。 特別疋使用在懸浮微機電設計上時，面對翹曲改變的間距 間距，本發明可以依需求互換如下： 10 200935469 C= e X A1/(_)或 O e χ (A1+A2)/d。 故本發明能依照需求隨時開關補償電容板，以供微調電容 值’避免電容不匹配的問題，且能減少不同生產批次間的差異。 有關本案發明為達成上述目的、所採用之高度技術思想、 段，兹列舉-較佳可實施例並配合圖式詳細說明如後，相信 〇 本案發明之目的、特徵及其他優點，當可由之得-深入而具體 之瞭解。 【實施方式] 月^閱第4圖之’、婦彳’本發明微機電之電容補償結構詳 細說明如下： 〇 该電容補償結構係t作在一石夕基底20旁的絕緣層内， =㈣咖積設有電容3G，該電容3G包含有第一側基礎 二^及$二側完整電容板34,該基礎電容板31與第二側 凡’谷板34之間製作有間距d，其特徵在於· ^:側基礎電容板31同層製作至少—補償電容板％， 别述基礎電容板31與補償電容板32彼此獨立，_償電容板 32的面積尺寸為A2 ,該美礎兩容& Ή μα 合板31的面積為Α1,且該基礎 幻Γ321而二赠電雜32各自具備向料敎金屬電路 1剡，而賴金屬電路311、321連接被控於一開關電路（圖 11 200935469 中未示），且金屬電路3!】 或直接撕物糊咖^導細外銜接 t她__，蝴職轉容板& 面積A1偏完整電容板34的面積Μ有誤差時，便可以隨時 利用開關電路開啟或關閉該， 列狀況： 谀補彳貝包合板32,故可以產生下 ❹ Ο 其-，毅軸_償電雜32可財效娜原本該基 礎-电容板31的不足電容值，其電容值算式如下： 〇 e X (Al+A2)/d。 其二’關閉該切換補償電容板32可以維持原本設計之該 基礎電容板31的電容值’其電容麟式如下： C= e X Al/d。 故本發明的結構能夠有效避免電容不匹配的問題，無論是 該基礎電容板31的面積A1與該完整電容板34的_ A4有誤 差4 ’或間距d製作有差異時，都能微調電容值，有效減少不 同生產批次間的差異。 本發明再一實施例（第二實施例）的結構，請參閱第5圖之實 施例，本實施是應用在微型懸浮結構的產品上，由於電容值受 到翹曲狀況可能有較大的差異，故本發明因應較大的調整需 求，則可以同時製作較多補償電容板，且其製造方法也有所變 12 200935469 換貫施，本實施例的結構說明如下； 該電容補償結_樣製作在—縣底2Q旁的絕緣層21 内，在絕緣層21 Θ沉積設有電容30,該電容30包含有第一側 基礎電容板31及第二側完整電容板34，縣礎電容板31與第 二側完整電容板34之㈣作有間距技術在第一 Ο 〇 側基礎電容板31及第二侧完整電容板34之_成懸浮空間 B，其特徵在於： 一该第-側基礎電容板31同層製作二補償電容板32、％， 刖述基礎電谷板31與二補償電容板32彼此獨立，該補償電容 板32、、33的面積尺寸為A2、A3，該基礎電容板μ的面積為 A卜補償電容板32的面積尺寸A2也不同於該補償電容板沿 、積尺寸A3且„亥基礎電容板31與補償電容板犯各自且備 向外導通之金屬電路(圖中未示），而前述金屬電路連接被控於 ^關1路(圖中未不）’且金屬電路也可以依照習知技術向外 衡接或直接在畴連接預設的Mf路(未圖示）； 1此，本發明生產測試時，若是發_第二側完整電容板 被糾空間B釋放後產她曲間距β，或是基礎電容板Μ ^面制無完整嫩34㈣A4 _時，便可以隨 時利用開瞻:雜嫩32、33，故可 以產生下列狀況： 其一’開啟該切換補償電容板32可以有效補償原本僅有 13 200935469 誤差形成的少量不足電容值，其電容值算式如下： 〇 e X (Al+A2)/d。 其一，同步開啟該切換補償電容板32、33可以有效補償 輕曲增加_D的較大不足電容值，其電容值算式如下： C= e X (Al+A2+A3)/(d+D)。 其三，同步關閉該切換補償電容板32可以維持原本設計 之電容值’其電容值算式如下： C= e X Al/d。 故本發明的結構能夠防止懸浮微機電產生翹曲時發生電 容值不匹配問題，不僅有效避免電容不匹配的問題，且無論是 該基礎電容板31的面積A1與該完整電容板33的面積A3有誤 差時，或間距d製作有差異時，都能微調電容值，有效減少不 同生產批次間的差異。 本發明第三實施例的結構，請參閱第6圖之實施例，本實施 同樣應用在微型懸浮結構的產品上，但是將電容結構全部製作 懸浮’且以侧向配置方式變換實施，本實施例的結構說明如下； 該電容補償結構同樣製作在一矽基底20旁的絕緣層21 内，在絕緣層21内懸浮有電容40，該電容4〇包含有中央基礎 電谷板41及一側完整電谷板42 ’該基礎電容板41與完整電容 板42之間製作有間距d，其特徵在於： 14 200935469 在該基礎電额41同相另—觸浮㈣至少-補償電 容板43，前縣礎電容板41编償電容板43彼立，該補 W合板43U電容板42及該基礎電容板&皆具備向外 導通之金屬電路（圖中未示），而前述金屬電路連接被控於開關 電路（圖中未不）’且金屬電路也可以依照習知技術向外銜接或 直接在内部連接預設的開關電路（未圖示）； ❹ ❹ 藉此，本發明生產測試時，若是發現該完整電容板处及 该基礎電雜41的面齡誤差或電容值不足時，便可以隨時 利用開關電路開啟補償電容板你有效補償原本僅有誤差形成 的少量不足電容值。 x 故本發明的結構能夠防止懸浮微機電產絲曲時發生带 =不匹配問題’不僅有效避免電容不匹配的問題，且面二 ==不足時，都能微調電容值，有效減少不同生產批次 本發明之微機電之電容娜方法如下： 容板； 在微機電電容其中—側基礎電容板旁製作至少—補償電 導通 前述基礎電额與贿電容減此鼓且具備向外 之金屬電路；以及 藉補償電容板__控電容匹配。 15 200935469 錯此，本發明的方 J々去可u依照需求隨 以供微調電容值，％ & ^開關補犒電容板， 批次間的差異。 匹配的問碭，且能減少不同生產 層，之創新設計係於—雜底上表面形成絕緣 m 。豕'、、巴緣層内製作有電容， 〇In order to achieve the foregoing objective, the MEMS capacitive compensation structure of the present invention forms an insulating layer on the upper surface of the shixi substrate, and the insulating layer has a capacitance, and one side of the capacitor includes at least a base capacitor plate and at least a compensation capacitor. The other side of the board is a complete capacitor board, and the foregoing basic capacitor board, the compensation capacitor and the complete capacitor board are independent of each other and have a metal circuit that is turned on; thereby, the invention can switch the compensation capacitor board at any time according to requirements. The complete capacitor board is used to reduce the capacitance mismatch between the Weihe electric quantity (for the capacitor board and the capacitor board) to avoid the problem of capacitor mismatch, and can reduce the difference between different production batches. It is worth mentioning that the aforementioned basic capacitor plates are independent and the feedstock and the forward capacitor plates have a door/ΓΓ with each other, and the metal circuits of the two are connected outwards. The object is (4) the shed (four) road, or the second lingu city __, this _ is set to Long Chengming, Asia does not need to be described in detail. Further discussion of the heart 200935469 The second object of the present invention is to provide - the condition of the capacitance of the Taiwanese right 4 〃 electromechanical capacitor # b effective _f 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 电容 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹 匹In order to achieve the foregoing object, the cup side of the present invention includes at least a base capacitor plate and at least a compensation electric power machine: (10) the plate and the compensation capacitor plate are independent of each other, and the switching capacitance of the base capacitor plate is matched. The metal circuit of i, by means of compensation 〇 , =, she can take care of the problem of capacitor mismatch, and ― the aforementioned MEMS capacitor compensation for the junction, the _ side of the capacitor contains at least 抒j屯* board and At least - compensate for the capacitive plate, and the invention refers to at least - the number of patches! There are several to a plurality of covers; in addition, there is a complex compensation voltage of %, and the size of each of the display capacitor plates is *_. For example, when (4) has the compensation capacitor board, the shell size of the capacitor plate is A2 'the area of the base capacitor plate A1. At this time, the capacitance value formula of the present invention can be interchanged as follows: C-e X Al /d or 〇ex(Al+A2)/d. In particular, when used in suspension MEMS design, the present invention can be interchanged as needed to face the pitch spacing of warpage changes: 10 200935469 C= e X A1/(_) or O e χ (A1+A2)/d . Therefore, the present invention can switch the compensation capacitor plate at any time according to requirements, so as to fine-tune the capacitance value to avoid the problem of capacitance mismatch, and can reduce the difference between different production batches. With regard to the present invention, the highly technical idea and the paragraphs used to achieve the above objects, the preferred embodiments and the detailed description of the drawings are as follows, and it is believed that the objects, features and other advantages of the invention can be obtained from - In-depth and specific understanding. [Embodiment] Monthly reading of Figure 4, 'Women's 彳' The MEMS compensation structure of the present invention is described in detail as follows: 〇 The capacitance compensation structure t is made in an insulating layer beside a stone base 20, = (four) coffee A capacitor 3G is provided, and the capacitor 3G includes a first side base 2 and a two-sided complete capacitor board 34. The base capacitor board 31 and the second side of the valley plate 34 are formed with a spacing d, which is characterized by ^: The side base capacitor plate 31 is made in the same layer at least - the compensation capacitor plate %, and the base capacitor plate 31 and the compensation capacitor plate 32 are independent of each other, and the area size of the capacitor plate 32 is A2, which is the same. Ή μα ply 31 has an area of Α1, and the basic phantom 321 and the second shuangdian 32 each have a feed metal circuit 1剡, and the metal circuits 311 and 321 are connected to a switching circuit (Fig. 11 200935469) Show), and the metal circuit 3!] or directly tear the paste coffee / guide the fine outer connection t her __, the butterfly job transfer board & area A1 partial complete capacitive plate 34 area error, you can always use The switch circuit is turned on or off, the column condition: 谀 彳 彳 包 包 包 32, so can Produce the next Ο Ο -, the axis of the _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The second 'turning off the switching compensation capacitor plate 32 can maintain the capacitance value of the base capacitor plate 31 originally designed. The capacitance is as follows: C = e X Al/d. Therefore, the structure of the present invention can effectively avoid the problem of capacitance mismatch, and the capacitance value can be finely adjusted when the area A1 of the base capacitor plate 31 and the _A4 of the complete capacitor board 34 have a difference of 4' or the spacing d. , effectively reduce the difference between different production batches. For the structure of the second embodiment of the present invention, please refer to the embodiment of FIG. 5. The present embodiment is applied to a product of a micro-suspended structure, and the capacitance value may be greatly different due to the warpage condition. Therefore, according to the invention, a large compensation capacitor plate can be produced at the same time, and the manufacturing method thereof is also changed. The structure of the embodiment is as follows: The capacitance compensation junction is produced in the A capacitor 30 is disposed on the insulating layer 21 in the insulating layer 21 next to the bottom of the county. The capacitor 30 includes a first side base capacitor plate 31 and a second side complete capacitor plate 34, and the county capacitor plate 31 and the second. (4) of the side complete capacitor plate 34 is a floating space B of the first 〇 基础 base buffer plate 31 and the second side complete capacitor plate 34, and is characterized in that: the first side base capacitor plate 31 is the same The layer is made of two compensation capacitor plates 32 and %. The basic grid plate 31 and the second compensation capacitor plate 32 are independent of each other. The area of the compensation capacitor plates 32 and 33 is A2 and A3, and the area of the base capacitor plate μ is A pad compensates the face of the capacitor plate 32 The size A2 is also different from the compensation capacitor plate edge, the product size A3, and the metal circuit board 31 and the compensation capacitor board are each made of a metal circuit (not shown), and the foregoing metal circuit connection is controlled. ^Off 1 way (not shown in the figure) and the metal circuit can also be externally connected according to the prior art or directly connected to the preset Mf path (not shown); 1. Here, in the production test of the present invention, _ The second side of the complete capacitive plate is released by the correction space B to produce her pitch β, or the basic capacitive plate Μ ^ surface system without complete tender 34 (four) A4 _, you can use the open view at any time: mixed tender 32, 33, so The following conditions can be generated: One of 'turning on the switching compensation capacitor plate 32 can effectively compensate for a small amount of insufficient capacitance value which was originally formed by the error of 13 200935469, and the capacitance value is calculated as follows: 〇e X (Al+A2)/d. Simultaneously turning on the switching compensation capacitor plates 32, 33 can effectively compensate for the large insufficient capacitance value of the light curve increasing _D, and the capacitance value is calculated as follows: C = e X (Al + A2 + A3) / (d + D). Third, synchronously turning off the switching compensation capacitor plate 32 can maintain the original design of the electricity The value of the capacitance value is as follows: C = e X Al / d. Therefore, the structure of the present invention can prevent the capacitance value mismatch problem when the suspension MEMS is warped, and not only effectively avoids the problem of capacitance mismatch, and When there is an error between the area A1 of the base capacitor plate 31 and the area A3 of the complete capacitor plate 33, or when the pitch d is made different, the capacitance value can be finely adjusted to effectively reduce the difference between different production lots. For the structure of the structure, refer to the embodiment of FIG. 6. The present embodiment is also applied to the product of the micro-suspended structure, but the capacitor structure is all suspended and implemented in a lateral configuration. The structure of the embodiment is as follows; The capacitor compensation structure is also formed in the insulating layer 21 beside the substrate 20, and a capacitor 40 is suspended in the insulating layer 21, and the capacitor 4 includes a central base electric grid 41 and a complete electric grid 42'. A gap d is formed between the capacitor plate 41 and the complete capacitor plate 42, and is characterized by: 14 200935469 In the same phase of the electric power 41, the other phase is in contact with the floating (four) at least - the compensation capacitor plate 43, the former county power The board 41 compensates for the capacitor board 43. The capacitor board 42 and the base capacitor board 42 are provided with a metal circuit (not shown) that is turned on, and the metal circuit connection is controlled by the switch circuit. (not shown in the figure) 'and the metal circuit can also be connected to the outside according to the prior art or directly connected to a preset switch circuit (not shown); ❹ 借此 Thereby, if the complete test is found in the production test of the present invention When the surface error or capacitance value of the capacitor board and the basic circuit 41 are insufficient, the switching circuit can be used to open the compensation capacitor board at any time. You can effectively compensate for the small amount of insufficient capacitance that was originally formed by the error. Therefore, the structure of the present invention can prevent the problem of band mismatch when the suspension micro-electromechanical filament is produced, which not only effectively avoids the problem of capacitance mismatch, but also can finely adjust the capacitance value when the surface 2== is insufficient, effectively reducing different production batches. The method of the MEMS of the present invention is as follows: a slab; in the microelectromechanical capacitor, the side of the side of the base capacitor plate is made at least - the compensation of the electrical conduction of the aforementioned basic amount of electricity and brittle capacitance minus the drum and has an outward metal circuit; And by means of compensation capacitor board __ control capacitor matching. 15 200935469 In this case, the method of the present invention can be used to fine-tune the capacitance value according to the demand, % & ^ switch complement capacitor plate, the difference between batches. Matching questions and the ability to reduce different production layers, the innovative design is based on the formation of insulation m on the surface of the miscellaneous bottom.豕', and the edge of the edge of the bar has a capacitor, 〇
電容板及至少-赠4〜中—淑少包含一基礎 此獨立且具備向^ 縣礎電容板觸償電容板彼 p、通之金屬電路，而前述金屬電路連接於- 開關， 不匹配的問題，且能減少不同 藉此，本發明有效避免電容 生產批次間的差異； 斤、本电狀具有產業之可利用性』應已毋庸置疑，除 此之外林案貫施例所揭露出的特徵技術，於申請之前並未 w見於諸刊物，亦夫始址八日日* 曰皮A開使用，不但具有如上所述功效增 進之事Λ更具有不可輕忽的附加功效，是故，本發明的『新 穎!·生』以及it步性』都已符合專利法巍，妥依法提出發明專 利之申清’祈睛惠料查並早日賜料利，實感德便。 16 200935469 【圖式簡單說明】 第1圖 第一種習用剖視圖； 第2圖 第二種習用剖視圖； 第3圖 第二種習用翹曲變化示意圖； 第4圖 本發明第一實施例結構示意圖； 第5圖 本發明第二實施例結構示意圖；以及Capacitor board and at least - gift 4 ~ Zhong - Shu Shao contains a basic and independent of the metal circuit of the capacitor plate of the county, and the metal circuit is connected to the - switch, the problem of mismatch And the difference can be reduced, the invention effectively avoids the difference between the batches of the production of the capacitor; the utility of the electric appliance has the property of the industry should be undoubtedly, except for the case disclosed by the case of the forest case The feature technology has not been seen in the publications before the application, and it has been used on the 8th day*, and the skin has been added, which not only has the effect of improving the above, but also has an additional effect that cannot be neglected. Therefore, the present invention The "newness!·sheng" and it's step-by-stepness have all been in line with the patent law, and the application for the patent of the invention is properly submitted in accordance with the law, and the material is checked and given as soon as possible. 16 200935469 [Simplified description of the drawings] Fig. 1 is a first sectional view of the first embodiment; Fig. 2 is a second conventional sectional view; Fig. 3 is a schematic view showing a variation of the first conventional warping; Fig. 4 is a schematic view showing the structure of the first embodiment of the present invention; Figure 5 is a schematic view showing the structure of a second embodiment of the present invention;
第6圖 本發明第三實施例結構示意圖。 【主要元件符號說明】 《習用》 碎基底10 微機電結構11 電容12 第一側電容板121 第二側電容板122 面積A 間距d 電容值C 介電係數e 懸浮空間B 間距D 《本發明》 碎基底20 絕緣層21 電容30 基礎電容板31 補償電容板32 補償電容板33 完整電容板34 金屬電路311、321 17 200935469 面積 A1、A2、A3、A4 電容40 完整電容板42 基礎電容板41 補償電容板43Figure 6 is a schematic view showing the structure of a third embodiment of the present invention. [Major component symbol description] "Urban" Broken substrate 10 MEMS structure 11 Capacitor 12 First side capacitor plate 121 Second side capacitor plate 122 Area A Spacing d Capacitance value C Dielectric coefficient e Suspension space B Spacing D "The invention" Broken substrate 20 Insulation layer 21 Capacitor 30 Base capacitor plate 31 Compensation capacitor plate 32 Compensation capacitor plate 33 Complete capacitor plate 34 Metal circuit 311, 321 17 200935469 Area A1, A2, A3, A4 Capacitor 40 Complete capacitor plate 42 Base capacitor plate 41 Compensation Capacitor plate 43
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