TW200935046A - Inspecting device, inspecting method, and manufacturing method for a proximity exposure photomask, proximity exposure photomask and pattern transfer method - Google Patents

Abstract

A proximity exposure photomask 3 as an object to be inspected is irradiated with illuminating light which at least includes a light beam having a wavelength used in proximity exposure using the photomask 3 and which passes through an illuminating optical system 2 having a variable numerical aperture to become generally paralle light. The light beam applied to the photomask 3 as the illuminating light and passing through the photomask 3 is incident to an objective lens system 4 to form an image. The light beam passing through the objective lens system 4 is received by image pckup means 5. The numerical aperture of the illuminating optical system 2 may be selected within a range required for adjusting parallelism of the illuminating light from a light source in an exposure machine for performing proximity exposure. A front focal plane of the objective lens system 4 is movable with respect to a pattern surface of the photomask 3 by a distance corresponding to a proximity gap in the exposure machine.

Description

[Technical Field] The present invention relates to an inspection apparatus and an inspection method for a proximity exposure mask for inspecting a proximity exposure mask used for manufacturing an electronic component, and passing the inspection apparatus and inspection After the inspection of the method, the exposure mask, the pattern transfer method, and the method of manufacturing the proximity exposure mask are inspected. [Prior Art] ® In the prior art, in the manufacture of electronic components, for a photoresist film formed on a processed layer formed by a burnt process, a proximity exposure mask having a predetermined pattern is used for proximity exposure. The photoresist film is formed of an etched mask to form a photoresist pattern. Fig. 2 is a side view showing an exposure machine for performing proximity exposure. An exposure machine for performing proximity exposure, as shown in FIG. 2, having a light source 101' emitted from the light source 101 by a collecting mirror (elliptical mirror), 102, a collector 〇3 (integrator), and A collimating lens (collimat〇r 1 ens ) 104 is formed to form a parallel beam of uniform illumination. This parallel beam is incident on the mask 3 for proximity exposure. The light beam penetrating through the mask 3 exposes the photoresist film formed on the layer to be processed of the exposure substrate 105, and the exposure substrate 105 is disposed at a predetermined close pitch pg from the mask 3. The proximity pitch pg is approximately #m to hundreds"m. The proximity exposure is less in resolution than the projected exposure, but it is advantageous for the cost and productivity of the exposure machine. Moreover, since the proximity exposure is like contact exposure, the reticle is not in contact with the substrate, and the reticle is not contaminated.

2130-10150-PF 6 200935046 « As well as the advantages of less consumption, etc., it is often used in the manufacture of color filters and black matrices for liquid crystal display devices. JP-A-2007-256880 (patent document describes a method of using a proximity exposure method in pattern exposure for manufacturing a color filter. A disadvantage of the proximity exposure method is that the light is folded back when the light passes through the mask. In the publication, it is pointed out that the above-mentioned influence causes the corners of the pattern to be rounded, and the auxiliary pattern is disclosed for compensation. JP-A-2004-1993 (Patent Document 2) discloses the use of a mask. A reticle inspection device that inspects defects by penetrating the intensity distribution of illumination light.

A product such as a color filter or the like has a pattern size of several tens of thousands of melons, and a sufficient pattern can be formed by an exposure machine for proximity exposure even without using a high-exposure projection exposure apparatus. On the other hand, even a pattern having a smaller size can be achieved by using a proximity exposure. Therefore, the transfer image formed by the proximity exposure is inferior in the above-described resolution. In the manufacture of the photomask for the proximity exposure, the evaluation of the transferability of the exposure machine, the inspection of the pattern shape, and the determination of the pattern shape are desired. The pattern of proximity exposure is an important factor in the use of a reticle. In the proximity exposure, since a close spacing of "m or even tens" is formed between the photomask and the photoresist film, the pattern of the photomask and the pattern formed on the photoresist film are affected by the folding back of the illumination light (exposure light). Not the same. The patented literature δ has a technology that compensates for patterns with an auxiliary pattern.

2130-10150-PF 7 200935046 Deterioration of transfer accuracy The presence or absence of deterioration in transfer accuracy and its degree must first be evaluated quantitatively. On the other hand, as described above, in the case of a product manufactured by using the proximity exposure, the demand for pattern miniaturization has become remarkable in recent years. For example, in the case of a black matrix 'pattern, the pitch is 80//m to 100# m, and the line width of the lattice pattern is about 20 " m. If the line width is finer, a liquid crystal display with a clearer display can be produced. Device. However, in order to solve the fine-grained pattern, when the pattern is transferred using the proximity exposure, a high-priced proximity sensor must be used, so that the unit price of the product is greatly increased. Therefore, when the proximity exposure is used, it can be a very useful technique if it is finer according to the figure (4). When the pattern is made fine, the shape of the photoresist pattern on the formed transfer body is formed by using the mask, or the processing of the photoresist pattern is sufficient: or the image is caused to cause an action of the product. The obstacles before the exposure of the light-resistance of the bad risk are... There are only the shape of the pattern of the first cover viewed by the microscope, and the elements that cannot be grasped are still reported. For an exposure machine for near-contact exposure, a light source including an applied, two-line wavelength region is generally used. Using a light source having this wavelength region 使 to shape the photoresist on the transferred body: =: The wavelengths of each other will produce complex foldback interactions: ΓΗ == close contact of the cover and the transfer body in a very close position The unique conversion in the middle, and the positive and 'in the manufacture of black material or color filter, the use of negative sense to make the ancestors feel better than the positive photosensitive material, compared with the type of photoresist. It is more difficult to make it difficult to predict the resist pattern.

2130-10150-PF 200935046 In view of the above, an object of the present invention is to provide an inspection apparatus for a proximity exposure mask and a method for inspecting a proximity exposure mask, and to determine whether the proximity exposure mask pattern is good before actual exposure, and A method of manufacturing a proximity exposure mask including a project including the inspection and a method of pattern transfer are provided. The present invention is directed to an engineering condition for obtaining an optimum exposure and photoresist development process for a near-exposure with a % cover over-test #, and an optical resistance obtained by objectively actual exposure corresponding to an exposure condition. Figure #, can make the conditional work more efficient. That is, it is useful to estimate the obtained resist pattern by approximating the exposure of the actual exposure project or grasping the pseudoscopic exposure of the actual exposure process. Here, the inspection apparatus for the proximity exposure mask of the present invention has one of the following configurations for the purpose of solving the above problems. [Configuration 1] An inspection device for a proximity exposure mask, comprising: a holding device for holding a proximity exposure mask of the object; and a light source emitting the light source including at least the proximity exposure using the mask Illuminating light of a wavelength beam, an illumination optical system, guiding illumination light from the light source, and illuminating the illumination light in a direction parallel to the reticle held by the reticle holding device, the number of openings may be Changing; a lens system is irradiated to the reticle as transparent light, a light beam penetrating the reticle is incident to image the beam; and a photographic device receives the light beam passing through the lens lens; The computing device 'analyzes information obtained by the above-described photographing device;

2130-10150-PF 9 200935046 A first moving device 'in a state parallel to the main surface of the reticle in a state in which the optical axes of the illumination optical system, the transfer lens, and the imaging device are aligned Moving; a second moving device that moves the object lens system and the photographing device in the optical axis direction; and a control device that controls the first and second moving devices, wherein the number of openings of the illumination optical system can be set to In an exposure machine that uses a reticle for proximity exposure, 'the parallelism of the illumination light from the light source is adjusted to the necessary range. In the lens system, the front focal plane can be moved only from the pattern surface of the reticle. The distance between the close proximity of the exposure machine. [Structure 2] In the inspection apparatus having the proximity exposure mask of the structure 1, the resolution of the acquired image determined by the magnification of the objective lens system and the size of the pixel of the imaging device is closer to the exposure using the photomask. The resolution is also high, and the resolution of the objective lens system formed by the number of apertures of the lens system and the wavelength of the illumination light is less than the minimum @ pattern interval of the image obtained in the proximity exposure. [Structure 3] In the inspection apparatus having the proximity exposure mask having the structure 1 or the structure 2, the number of openings of the illumination optical system is based on the alignment angle of the illumination optical system in the exposure machine that performs the proximity exposure using the mask. set up. [Construction 4] In the inspection apparatus of the proximity exposure mask having the configuration 1 or the structure 2, the number of openings of the illumination optical system is 〇5 to 〇. The inspection method of the proximity exposure mask of the present invention has the configuration of any of the following 2130-1 (1) 5〇-PF 10 200935046. [Configuration 5] A method of inspecting a proximity exposure mask, wherein the proximity exposure mask of the subject may have an illumination light passing through a light beam having a wavelength at least used in proximity exposure using the mask. The illuminating optical system is irradiated with a substantially parallel light, and is irradiated to the reticle to become the illuminating light, and the light beam that has passed through the reticle is incident on the lens lens and imaged, and the light beam passing through the object is transmitted through In the inspection method of the proximity exposure reticle that is suspended and received by light, the number of apertures of the illumination optical system is set according to the parallelism of the illumination light of the light source in the exposure machine that performs the proximity exposure using the reticle, and the connection is performed. The position of the front focus surface of the objective lens system is such that the focus lens is focused on the pattern surface of the photomask, and the target lens system is retracted corresponding to the proximity pitch in the exposure machine. The image plane is separated from the pattern surface by a distance corresponding to the proximity pitch, and is captured by the photographing device receiving the light of the illumination light in the position. [Nection 6] In the inspection method of the proximity exposure mask having the structure 5, the magnification determined by the magnification of the objective lens system and the pixel size of the imaging device is more than the resolution of the proximity exposure using the photomask. I. The resolution of the connection between the number of apertures of the lens system and the wavelength of the illumination light is less than the minimum pattern of the image obtained in the proximity exposure. [Configuration 7]

2130-1 〇] 50-PF 11 200935046 In the inspection method of the proximity exposure mask having the configuration 5 or the structure 6, the number of openings of the illumination optical system is based on illumination in an exposure machine that performs proximity exposure using a photomask Set by the alignment angle of the optical system. [Construct 8] In the inspection method of the proximity exposure mask having one of the configuration 5 or the configuration 6, the number of openings of the illumination optical system is 〇·〇〇5 to 〇4. The method for producing a proximity exposure mask of the present invention has the following constitution. ® [Construct 9] It includes an inspection method of a proximity exposure photomask as described in any of Configurations 1 to 8, as an inspection project. The pattern transfer method of the present invention has the following configuration. [Structure 10] Forming a predetermined pattern, and using the proximity exposure light hood detected by the inspection method of the proximity exposure reticle described in any of the configurations 5 to 8, the proximity exposure is performed by the exposure machine described above, A near-exposure reticle manufactured by the manufacturing method of the proximity exposure reticle described in Structure 9 is formed, and the exposure is performed by the exposure machine. The inspection apparatus for the proximity exposure mask of the present invention can be set such that the parallelism of the illumination light from the light source is adjusted to be necessary in the exposure machine that performs the proximity exposure using the mask because the number of openings of the illumination optical system is set. In the range of the lens lens system, the front side focal plane can be moved from the pattern surface of the reticle to the distance _ of the spacing of the splicing, because & approximating the exposure of the actual proximity exposure or grasping the actual proximity exposure Virtual state

2130-10150-PF 12 200935046 The photoresist pattern obtained by the exposure is presumed. Since the inspection apparatus for the proximity exposure mask of the present month has the structure 2, the resolution of the acquired image determined by the magnification of the objective lens system and the pixel size of the imaging device is more than the resolution of the proximity exposure using the mask. In the south, the resolution of the objective lens system formed by the number of apertures of the lens system and the wavelength of the illumination light is less than the minimum pattern interval of the image obtained in the proximity exposure. Therefore, it is possible to correctly estimate the actual proximity exposure. The resulting photoresist pattern. ® The inspection apparatus for the proximity exposure mask of the present invention is configured such that the number of openings having the structure 3' illumination optical system is set according to the alignment angle of the illumination optical system in the exposure machine that performs the proximity exposure using the photomask, and thus is correct The photoresist pattern obtained in the actual proximity exposure is estimated. Since the inspection apparatus for the proximity exposure mask of the present invention has the structure 4, the number of openings of the illumination optical system is 〇〇.5 to 〇·〇4, so that the photoresist pattern obtained in the actual proximity exposure can be accurately estimated. . The method for inspecting the proximity exposure mask of the present invention is such that the number of openings having the structure 5' illumination optical system is set according to the parallelism of the illumination light of the light source in the exposure machine that performs the proximity exposure using the photomask. The position of the front focus surface of the object lens system is such that the focus lens is attached to the pattern surface of the reticle, and the object lens system is retracted corresponding to the proximity pitch in the exposure machine, so as to correspond to the proximity The distance of the pitch is away from the pattern surface' and is photographed by the photographic device receiving the illuminating light of the illumination light in the position. The method for inspecting the proximity exposure mask of the present invention has a structure 213 (M〇l5〇-PF 13 200935046 6' is obtained by the magnification of the object (4) and the resolution of the acquired image determined by the pixel sensor of the imaging device. Compared with the analysis of the near-exposure using the photomask, the resolution of the lens lens formed by the number of apertures of the lens system and the wavelength of the illumination light is less than the minimum image obtained in the proximity exposure. Since the pattern is spaced, the photoresist pattern obtained in the actual proximity exposure can be accurately estimated. The method for inspecting the proximity exposure mask of the present invention is based on the number of openings having the structure 7' illumination optical system, which is closely connected according to the use of the mask. Since the alignment angle of the illumination optical system in the exposure ® exposure machine is set, the photoresist pattern obtained in the actual proximity exposure can be accurately estimated. The inspection method of the proximity exposure mask of the present invention has the configuration 8, Since the number of openings of the illumination optical system is 〇〇〇5 to 〇〇4, the photoresist pattern obtained in the actual proximity exposure can be accurately estimated. The manufacturing method of the optical reticle is an inspection method having the structure 9' including the photoreceptor for the proximity exposure of the present invention, so that the desired photoresist can be obtained in the actual proximity exposure. The pattern transfer method of the present invention has the structure 10, forms a predetermined pattern, and uses the proximity exposure mask examined by the inspection method of the proximity exposure mask of the present invention, and the proximity exposure is performed by the exposure machine. Further, a predetermined pattern is formed, and a proximity exposure mask manufactured by the method for producing a proximity exposure mask of the present invention is used, and a proximity exposure is performed by the exposure machine to obtain a desired photoresist pattern.

That is, the present invention provides an inspection apparatus 2130-10150-PF 14 200935046 for a proximity exposure mask and a method for inspecting a proximity exposure mask, whether the exposure mask pattern is actually exposed, and provides the inspection including the inspection. Engineering = Method of manufacturing exposure mask and method of pattern transfer. [Embodiment] Hereinafter, the best mode for carrying out the invention will be described. [Structure of the inspection apparatus for the proximity exposure mask of the present invention] Fig. 1 is a side view showing the inspection of the proximity exposure light of the present invention. In the inspection apparatus, the photomask 3 is held by the mask holding device 3a. The reticle holding device 3a holds the vicinity of the side edge portion of the reticle holding device 3b in a state where the main plane of the reticle 3 is slightly staggered, and the hood 3 is tilted (the angle of the straight line in the figure is 0). The lower end portion of the mask, and then the inspection device has a light beam emitting a predetermined wavelength as a light source for the moon. The light source i uses, for example, a ubiquitin e lamp and a lamp (ultra-high pressure mercury lamp). The light source! It can be approximated by the light source used in the exposure machine used first. Alternatively, among the light beams emitted by the light source i, the wavelength light included in the wavelength region of the light source used by the exposure machine may be included. Then, the inspection apparatus has an illumination optical system 2 that introduces illumination light from the light source i to illuminate the reticle 3 held by the reticle holder 3a. The illumination optical system 2 includes a diaphragm mechanism 2a due to the variable number of openings (NA). Further, the illumination optical system 2 preferably has a field stop holder 2 for adjusting the irradiation range of the illumination light in the mask 3. The illumination light of the illumination optical system 2 is irradiated to the illumination optical system 2 held by the mask holding device 3& 2130-10150-pp 15 200935046, and the illumination light emitted from the light source 1 is substantially parallel light and irradiated to the light. Cover 3. The parallelism of the illumination light is set according to the collimation angle of the illumination optical system of the exposure machine for the proximity exposure using the mask 3, so that the alignment angle is the same, generally about 0 to 2 . . In the illumination optical system 2, since the number of openings (NA) is variable, the number of apertures obtained by the equation of the alignment angle 0 is substituted into [^8=11 to 115) (11 is the refractive index, and is 1 in the air). The number of openings of the illumination optical system 2 is set, whereby the illumination light (exposure light) of the exposure machine for the proximity exposure can be reproduced. Further, the number of openings of the illumination optical system 2 is preferably 〇 至 5 to 0.000. The illumination light that has been incident on the reticle 3 penetrates the reticle 3 and enters the incident lens system 4. The object lens system 4 includes, for example, a first group (analog lens) 4a that is incident on the illumination light that penetrates the reticle 3 and that is infinitely modified to the beam, and that is a parallel light, and images the light beam passing through the first group. The second group (imaging lens) 4b. The light beam that has passed through the objective lens system 4 is received by the photographing device 5. The photographing device 5 photographs the image of the photographing Φ (front side focal plane) P of the docking lens system 4. The photographing device 5 can use a photographing element such as a CCD. Then, the inspection device is provided with an arithmetic device 11 that performs image processing, calculation, comparison with a predetermined (10) value, and the like, and controls the illumination optical system 2 and the objective lens system for the captured image obtained by the imaging device 5. The control device 12 of the mobile operation of 4. Photograph determined by the positional relationship between the objective lens system 4 and the photographing device 5

2130-10150-PF 16 200935046 'The surface (rigid side focal plane) P is located at a predetermined small distance (several ym or even hundreds #m) from the pattern surface of the reticle 3 away from the object lens side 4 (reverse) position. The small distance from the pattern surface of the mask 3 to the photographing surface p corresponds to the proximity pitch of the exposure machine that performs the proximity exposure using the mask 3, and the position of the photographing surface P is in the exposure machine for the proximity exposure, corresponding to the Transfer the position of the photoresist film on the body. In the inspection apparatus, the configuration of the proximity gap at the time of simulating the proximity exposure is shifted with respect to the pattern surface of the photoresist 3, and the objective lens system 4 is shifted by a predetermined interval. First, the target lens system 4 is moved in parallel with the optical axis to match the focal point of the mask surface of the mask 3. This state is in a state where there is no close pitch, that is, a state corresponding to contact exposure. Thereafter, the objective lens system 4 is shifted by the same amount as the proximity pitch in the direction parallel to the optical axis and away from the reticle 3. Thereby, in the inspection apparatus, the actual state of the proximity exposure using the mask 3 is approximated. At this time, the image information obtained by the imaging apparatus 5 corresponds to the exposure light irradiated to the to-be-transferred body in the proximity exposure. . φ This inspection apparatus is characterized by an inspection machine that approximately reproduces the proximity exposure, unlike the exposure machine for proximity exposure, which also has a lens lens system 4 such as a proximity exposure machine. However, the function of the lens lens system 4 is different from that of the proximity lens of the proximity exposure machine. The function of the objective lens system 4 is to determine the pitch which corresponds to the pitch formed between the reticle and the object to be transferred when the proximity exposure is performed, and to enlarge the transfer image corresponding to the transfer at the pitch. Like. That is, when the proximity exposure is simulated to expose the mask 3 and the light-transmitting light intensity distribution data is obtained, the line width CD (critic dimension) of the pattern is close to the CD of the photographic element. The photographic image thus obtained 2130-10150-PF 17 200935046 is too thick relative to the pixels of the photographic element, and cannot reflect the transfer state of the pattern in the actual exposure, and the evaluation of the transfer image cannot be performed. Therefore, the ratio of the size of the pixels of the photographing device 5 corresponding to the pattern line width CD must be the level of CD resolution of the pattern on the photomask without any problem. This ratio is considered to be more than 5 times. In view of this consideration, the inspection machine of the present invention has a receiver lens system 4, and the design of the object lens system 4 is performed as follows. In the inspection apparatus, the resolution of the acquired image is determined by the magnification of the objective lens system 4, that is, the size of the pixel of the imaging device 5, and the decomposition ability of the exposure lens 10 using the mask 3 must be sufficiently high, for example, 5 times. Above, even more than 1〇 is better. Further, the resolution of the objective lens system 4 derived from the number of apertures of the objective lens system 4 and the wavelength of the illumination light must be less than the minimum interval among the images obtained by the exposure exposure. Further, "the resolution of the acquired image" is defined as [the pixel size of the photographing device (CCD) / the magnification of the lens system 4] (call). Further, the analysis ability (μπΟ is the degree to which the two points close to the 35 body are close to each other and the close Ο distance can be recognized. For example, the resolution ability 1 (10) means two points at which the distance 1 mark can be recognized. The light of the aberration-free lens is folded back. The theoretical analysis ability ε is defined as [ε = 0.61 (λ/ΝΑ) (Rayleigh equation). In the exposure machine for exposure exposure, the pattern surface of the mask is placed at a predetermined pitch and is placed at the position of the mask. As described above, when the exposure apparatus for the exposure exposure has the same optical arrangement, the imaging device 5 is disposed at a predetermined pitch from the pattern surface of the mask 3. However, In this aspect, the resolution of the image obtained by the photographing device 5 depends on the size of the element of the photographing device 5. The pixel of the photographing element such as CCD 2130-10150-PF 18 200935046 has a minimum size of 3 μm, usually about 5 |jm or even 2〇) the size of jm. On the other hand, the resolution of the resistive transfer image obtained by the exposure machine for exposure exposure is generally about 5 μπ] or even 1 〇岬, and the transfer image is obtained to analyze the pixel size of the general photographic element. It is too large, so it is necessary to have a mechanism for enlarging the transfer image through the reticle. Therefore, in this inspection apparatus, the objective lens system 4 is disposed between the photomask 3 and the photographing device 5 as an optical system for magnifying the image. The magnification (magnification) of the objective lens system 4 is set such that the resolution of the image obtained from the imaging device 5 is sufficiently high with respect to the resolution of the obtained transfer image. Further, in the same idea, the number of openings of the lens system 4 must be set on the same or less the resolution of the objective lens system as the resolution obtained from the photographing device 5. For example, 'in terms of parsing 5" or even 1"m, the sufficient resolution is at least 1/5 of the minimum pattern, preferably about 1/10. For example, when the minimum pattern is used, the photographic element is used. When the size is 10"m, the magnification of the lens system is at least 1〇, preferably 20 times, and the number of openings must be at least 0.25, preferably about 〇5〇. [Inspection method of the proximity exposure mask of the present invention] In the inspection apparatus, the illumination optical system 2, the objective lens system 4, and the imaging device 5 are respectively placed in the clamp so that the main + surface is slightly wrong. | While maintaining the reticle 3 at the opposite position. The method of inspecting the proximity exposure mask of the present invention is carried out by irradiating and receiving illumination light while the optical axes of the two are aligned. The illumination optical system 2, the object lens system 4, and the photographing device 5 are movably operated by the control device 12 controlling the first moving device 14. The second - 2130 - ] 〇 | 5 〇 pp 19 200935046 The mobile device u makes the respective optical axes of the illumination optical system 2, the objective lens system 4, and the imaging device 5 coincide with each other, and the first! The direction indicated by the arrow A in the figure is such that it moves in a plane parallel to the main plane of the reticle 3. In the inspection apparatus, by providing such a first moving device 14, even when the large-sized photomask is inspected, the reticle 3 cannot be moved in a direction parallel to the main plane to traverse the main reticle 3 A comprehensive inspection of the plane, in addition, can selectively check the desired part of the mask. In the inspection device, the second moving device 15 is controlled by the control device 12. The object lens system 4 and the imaging device 5 can be moved in the optical axis direction of the arrow B in Fig. 1, respectively. The relative distance to the reticle 3 is changed by moving the lens lens system 4 and/or the photographic device 5. In the inspection apparatus, the object lens system 4 and the (4) device 5 are respectively movable in the optical axis direction, and imaging can be performed in a state similar to the proximity exposure using the mask 3. Then, the control device 丨2 of the inspection device controls the 视野 field of view of the illumination optical system 2, the π aperture mechanism, the aperture mechanism of the objective lens system 4, and the movement operation device. In the inspection method for inspecting the reticle using the inspection device, the control device 12 is parallel to the light in a state where the optical axes of the illumination optical system 2, the objective lens system 4, and the imaging device 5 are aligned by the movement operation device. The in-plane movement operation of the main plane of the reticle 3 held by the cover holding device is performed while the objective lens system 4 and/or the photographing device 5 are moved in the optical axis direction. [Splitting characteristics of illumination light] In an exposure machine for proximity exposure, the light emission wavelength of the light source includes a wavelength region of g line or even 1 line, and therefore, in the inspection apparatus of the present invention, the full wave 2130-10150-PF - 20 200935046 is long At the same time, the g-line, the h-line, and the i-line are separately irradiated by the filter. Further, the photographic data of each wavelength obtained by the synthesis filter can be used to simulate the exposure of the mixed light of the g line or the i line in the actual exposure machine. The light source 1 in the inspection apparatus of the present invention emits illumination light having a wavelength distribution which is the same as or substantially equal to the exposure light using the proximity exposure of the reticle 3 after the inspection. Specifically, the illumination light system includes at least a g-line (436 nm), an h-line (405 nm), or an i-line (365 nm), or includes all of the wavelengths of the respective components, or ® may be any one or more of the respective wavelength components. Mixed light. In the case of a mixed light suitable for a desired light intensity ratio, it is preferable to make a decision based on the characteristics of the light source of the exposure machine actually used in the exposure machine for the near exposure. Then, the illumination light is irradiated to the reticle 3 by the wavelength selective illuminator 6 penetrating the optical filter or the like, and the mixing ratio of the respective wavelength components on the reticle 3 is adjusted. The wavelength selective filter 6 uses a filter having a characteristic of filtering out a light beam having a wavelength of at least 〇 or a predetermined wavelength or more. In the inspection apparatus, the wavelength distribution of the illumination light emitted from the light source 1 is the same as or substantially equal to the wavelength distribution of the exposure light emitted from the light source used in the exposure machine for the proximity exposure, and an inspection similar to the actual proximity exposure is performed. Further, in the inspection apparatus, when the mixed light of the g-line or the i-line is used, the position and magnification of each image photographed at a single wavelength must be the same due to image synthesis. Therefore, in the optical design of the objective lens system 4, it is of course possible to perform good aberration correction for each wavelength of the g-line or even the i-line, but

2130-10150-PF 21 200935046 It is best to have the same intersection position. But generally

= w, the spot ice degree is represented by D 〇 F - A 〃 / N42, and the focus position can be regarded as the same if the focus position is within a range below the depth of focus calculated from the number of openings of the objective lens system 4. Further, by appropriately designing the optical design, even if the focus shifts at each wavelength, the amount of fluctuation of the magnification can be grasped, and the image can be corrected in accordance with the amount of fluctuation before the synthesis. The depth of intersection of the lens system 4 is preferably in the range of less than l〇em. Moreover, in the inspection device, wavelength selection

The filter 6 can selectively use a first filter that mainly passes only the g line emitted by the light source i, a second filter that mainly passes only the h line emitted by the light source, and mainly emits only the light source 1. The third filter through which the i line passes. In this case, the light intensity data dg obtained by the photographing device 5 when the first filter is used, the light intensity data dh obtained by the photographing device 5 when the second filter is used, and the use of the third filter are respectively obtained. The light intensity data di obtained by the photographing device 5 at the time. Then, by adding the weights of the predetermined enthalpy to each of the light intensity data dg, dh, and di, respectively, the nose, the h line, the h line, and the i line are irradiated to the reticle 3 with a predetermined intensity ratio. Light intensity data. The weight of each of the light intensity negative materials dg, .dh, and di is, for example, the intensity ratio of the g-line, the h-line, and the i-line of the light beam emitted from the light source 1 of the inspection apparatus is 1· 〇〇: 1. 20 : 1. 30 The intensity ratio of the g-line, the h-line, and the i-line of the exposure light emitted from the light source in the proximity exposure is l 〇〇: 0 95 : la, the coefficient of dg is 1. 00, and the coefficient of dh is 〇·95/1. The coefficient Π of 2〇( = 〇. 79 ), & is 1. 15/1. 30 (= 〇. 88). The added data, i.e., [f gdg +fhdh+f idi ], is the light intensity distribution data obtained when the exposure light in the exposure machine for exposure 2130-10150-PF 22 200935046 is irradiated to the reticle 3. Moreover, such calculation is performed by the calculation device 11. [Manufacturing method of the proximity exposure mask] The method for manufacturing the proximity exposure mask of the present invention has a method in which a @钱光罩 is formed on a transparent substrate, and a desired body is formed on a glass substrate or the like. In the inspection device for the proximity exposure mask, the inspection device 5 is used to capture the (4) of the transfer-receiving body to obtain the light intensity distribution. From the light intensity distribution obtained here, the obtained photoresist pattern was evaluated, and a method of manufacturing a photomask based on the evaluation was carried out. More specifically, as described above, there is included a method of using a light source similar to that used in an exposure machine for proximity exposure, at a position of a photoresist film when a photomask is used for proximity exposure, and a proximity exposure The pattern of the pattern transferred to the transfer target is closely captured by the objective lens system 4 and the photographing device 5, and the light intensity distribution of the photoresist pattern formed by the proximity exposure and the image pickup device 5 is quantitatively grasped. Relationship, using this relationship to infer (impersonate) the photoresist pattern formed by the proximity exposure of the photomask. Then, in the method of manufacturing the reticle, the size of the processed layer pattern including the photoresist pattern on the transfer target or the mask as the mask is processed according to the light intensity distribution obtained by the image pickup device 5 Various desorption and evaluation such as the correction value and the shape change caused by the change in the transmittance of the mask. Further, based on the light intensity distribution data, the determination of the defect is performed, and the ease of the correction can be judged. Further, using the test light 2130-I0150-PF 23 200935046 cover holding a predetermined singular or plural test pattern, the light intensity distribution of the pattern is obtained by the inspection apparatus of the present invention, and on the other hand, the test mask is exposed by actual proximity. Exposing the machine, obtaining a photoresist pattern on the transfer target, and grasping the relationship between the light intensity distribution and the photoresist pattern, and determining the proximity exposure condition of the actual mask forming the actual pattern according to the relationship already grasped, The processing conditions and the like of the obtained photoresist pattern are actually transferred. [Pattern Transfer Method] ❹ Manufacturing a photomask for proximity exposure, generally in a known manufacturing process, the design can be optimized by the engineering including the evaluation project by the photomask inspection method of the present invention described above. Further, it is possible to quickly produce a good reticle for manufacturing a liquid crystal device in which defects are sufficiently corrected. In the present invention, the photomask formed by the inspection method of the proximity exposure mask of the present invention or manufactured by the manufacturing method of the present invention is applied to the processed layer of the object to be transferred by proximity exposure. The resist layer is exposed to produce electronic components. © By this, the desired performance of a stable, good-performing electron cell can be obtained in a short period of time. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a side view of an inspection apparatus 6 of a proximity exposure mask of the present invention. Further Fig. 2 is a side view showing the configuration of an exposure machine that is in close proximity exposure. [Description of main component symbols] 2130-10150-pf 24 200935046 1 to light source 2 to illumination optical system 3 to masks 3a and 3b to mask holding device 4 to lens lens system 4a to first group (analog lens) 4b ~Second group (imaging lens) 5 to photographing device 6 to wavelength selecting filter 11 to calculating device 12 to controlling device 14 to first moving device 15 to second moving device P to photographing surface (front side focal plane) 1 01 to light source 102 to concentrating mirror (elliptical mirror) 103 to concentrator 104 to alignment lens (collimator lens 105 to exposure substrate 106 to processed layer 2130-10150-PF 25

Claims (1)

200935046 X. Patent application scope: u An inspection device for a proximity exposure mask, comprising: a holding device 'keeping a proximity exposure mask of the object to be detected; a light source emitting the proximity exposure at least using the above mask Illumination light of a beam of a wavelength used; an illumination optical system that directs illumination light from the light source to illuminate the illumination light in a direction parallel to the reticle held by the reticle holding device The number of openings may be changed; β is a lens lens that illuminates the reticle as the illumination light, and a light beam penetrating the reticle is incident to image the beam; a photographic device receives the lens through the lens a light beam; a computing device that analyzes information obtained by the imaging device; and a first moving device that allows the illumination optical system, the objective lens system, and the optical axis of the imaging device to be aligned Moving in a plane parallel to the main surface of the reticle; a second moving device to make the above-mentioned objective lens system and The photographing device is movable in the optical axis direction; and the control device controls the first and second moving devices, wherein the number of openings of the illumination optical system can be set to be in an exposure machine that uses a photomask for proximity exposure The parallelism of the illumination light of the light source is adjusted to a necessary range, and the front focal plane of the above-mentioned objective lens system can move only from the pattern surface of the reticle to a distance corresponding to the proximity of the exposure machine. 2. The inspection apparatus for a proximity exposure reticle according to claim 1, wherein the image obtained by the magnification of the objective lens system and the pixel size of the imaging device 2130-10150-PF 26 200935046 The resolution is higher than the resolution of the proximity exposure using the photomask, and the resolution of the objective lens system formed by the number of apertures of the touch lens system and the wavelength of the illumination light is less than that obtained by the proximity exposure. The minimum pattern spacing of the image. 3. The inspection apparatus for a proximity exposure reticle according to the above aspect of the invention, wherein the number of openings of the illumination optical system is an alignment of an illumination optical system in an exposure machine that performs proximity exposure using the reticle. Set by the collision angle. The inspection device for the proximity exposure reticle according to claim 1, wherein the number of openings of the illumination optical system is 〇〇. 5 to 〇. 〇4. 5. A method for inspecting a proximity exposure mask, wherein the illumination for a proximity exposure mask of a subject is variable by a number of apertures including a light beam of a wavelength used in at least a proximity exposure using the mask The illumination optical system is irradiated with a substantially parallel light, and is irradiated to the reticle to become the illuminating light, and the light beam that has passed through the reticle is incident on the lens lens, and is imaged by the light beam passing through the objective lens system. In the method of inspecting the proximity exposure mask that receives light by the photographing device, the number of openings of the illumination optical system is based on the parallelism of the illumination light of the light source in the exposure machine that performs the proximity exposure using the photomask. The position of the front focal plane of the touch lens system is such that after the focus lens is focused on the pattern surface of the mask, the target lens system is retracted corresponding to the proximity pitch in the exposure machine. And the photomask is located at a distance from the pattern surface corresponding to the distance of the proximity gap and receiving the illumination light in the bit f by the photographing device The method for inspecting the proximity exposure reticle according to claim 5, wherein the magnification of the above-mentioned objective lens system and the pixel size of the above-mentioned photographing device are as follows. The resolution of the determined image obtained is higher than the resolution of the proximity exposure using the photomask, and the resolution of the objective lens system formed by the number of apertures of the touch lens system and the wavelength of the illumination light is less than the proximity The minimum pattern interval of the image obtained by the exposure according to the invention of claim 5, wherein the number of openings of the illumination optical system is closely connected according to the use of the photomask. 8. The inspection method of the proximity exposure reticle described in claim 5, wherein the number of openings of the illumination optical system is the same as the collimation angle of the illumination optical system in the exposed exposure machine. 〇·至〇. 〇4. 9. A method of manufacturing a proximity exposure reticle comprising the proximity of any one of claims 1 to 8 The inspection method of the exposure reticle is used as the inspection project. ❹ 1Q' - a pattern transfer method to form a predetermined pattern, and the proximity exposure light according to any one of items 5 to 8 of the patent scope of claim 3 is used. The proximity exposure mask inspected by the loose method of the cover is exposed by the exposure machine. u. The pattern transfer method forms a predetermined pattern, and is used for the proximity exposure described in claim 9 of the patent application scope. The proximity exposure mask manufactured by the method for manufacturing a photomask is subjected to proximity exposure by the above exposure machine. 2130-10150-PF 28