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TW200923142A - Sn-plated conductive material, method for making such material and electric conduction part - Google Patents

Sn-plated conductive material, method for making such material and electric conduction part Download PDF

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Publication number
TW200923142A
TW200923142A TW97130009A TW97130009A TW200923142A TW 200923142 A TW200923142 A TW 200923142A TW 97130009 A TW97130009 A TW 97130009A TW 97130009 A TW97130009 A TW 97130009A TW 200923142 A TW200923142 A TW 200923142A
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Taiwan
Prior art keywords
tin
layer
silver
alloy
copper
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TW97130009A
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Chinese (zh)
Inventor
Song-Zhu Chu
Jun-Ichi Kumagai
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Mitsubishi Shindo Kk
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Publication of TW200923142A publication Critical patent/TW200923142A/en

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Abstract

This invention provides a Sn-plated conductive material which is a Sn-plated conductive material 1 having a Sn-plating layer 5 of Sn or alloy of Sn on a substrate 2 of a conductive metal. In a cross-section along the direction of the overlay of the substrate 2 and the Sn-plating layer 5, an Ag-Sn alloy layer 6 having Ag-Sn particles aggregated in the surface portion of the Sn-plating layer 5 is formed.

Description

200923142 •九、發明說明: •【發明所屬之技術領域】 “本發明為關於一種利用做為半導體裝置及電子·電器 ,之材料之錢锡導電材料及其製造方法,α及使用該鏡 ’ ^電材料所形成之端子、連接器、導線架等通電零件。 本專利申凊案係基於2〇〇7彳8月7日於日本申請之 特願2GG7-2G5571號、2GG8年7月16日於日本申請 , 特願2008-185061號主張優先權,並援用其内容於 此。 【先前技術】 電性Li之電子♦電器零件係利用在由銅合金等組成之導 此等:;上::鍍錫而得之鍍錫導電材料。為了謀求提高 生成:及而千零件之可靠度,而要求其抗晶鬚(whisker) 生成陸及耐熱性優良之鍍錫導電材料。 近年來因從環境問題產生 . ,咖咖 Substanees,㈣;^=,加― 不要求不含錯之純錫系電鍍。但已知^ 不以口之-般附有鑛錫層零件 晶鬚。 r u便用之%境而產生錫 同時’將不含鉛之純錫系 流鑛錫在回流處理時,其電鑛層:部得之回 可抑制錫晶鬚之自然產生。但例如 ^ 3釋出,因此 之母端子與公端子之接觸部份之方式應力以連接器 偏造成之錫晶鬚產生,最後該電子·電器: 320516 200923142 .件之可靠度會降低。 抑制該錫晶鬚之方法’可以高價且貴重之資源 行電鍍處理,但製作成本會變為極高。 ▲料’對半導體導線架及電子零件之連接器端子,除 別逑之抗晶鬚生成性外,亦要求其对熱性(電器接觸電阻之 安定性)。錫金屬由於在空氣中易氧化,在其表面常形成有 $的乳化皮膜。因此’在其端子材為包覆鑛錫層之材料之 '月形’與其接觸之對側之材料會破壞此氧化皮膜而接觸宜 I:柔軟之錫金屬藉此實現電性連接。其令已知錫盥直他 金屬之擴散合金化之反應速度快,因此在使 ^材中元素與錫進行合金化反應,會同時使_層之膜; 特別是在高溫環境中’會促進錫與銅之合金化反應, ^使鑛錫層完全合金化,因此使銅—錫合金層露出電鑛層 :氧化:ίί面除了形成錫氧化膜以外再形成銅氧化膜。 與對側材料接觸時無法輕易破壞,因此有會變 到15(TC以上Γ 年來所要求之溫度提高 J 以上,而使其更為嚴重。 層厚::延ΐ:確保其可靠度’變得不得不採取增加鍍錫 延長時間直到鑛錫層完全合金化之方法。… 端子之情形,增加二;;;=’在_ 联合力造成電鑛層變形1 ^度因時此合母動端阻子;:之 拔力),使嵌人你酱α έ义人口此日灰呵其滑動阻力(插 負擔。D乍業性I差,導致後合不良並增加作業者之 320516 6 200923142 方面右使鍍錫層變薄,則對於苴杆曰旁1 有效,作合诰忐乂、+、 t於〆、机日日鬚生成為 極難使其同時且有# 、^之對鍍錫材料, 于有抗日日鬚生成性及耐熱性。 近㈣有謀讀高其耐純及抗l成性 之鍍錫導電材料。例如在 、風Γ生 之表面上,在Μ Μ 之提案為在銅基材 甲間層之鍍銅層與鍍錫層間再設置做糸阳 “:鍍銀層,並經由回流處理形成銀,合金層者。”、、200923142 • Nine, invention description: • [Technical field to which the invention belongs] "The present invention relates to a money-tin conductive material using a material as a semiconductor device and an electronic appliance, and a method of manufacturing the same, and using the mirror' Electrolytic parts such as terminals, connectors, lead frames, etc. formed by electrical materials. This patent application is based on the 2,7,7,7,7,,,,,,,,,,,,,,,,,, Japanese application, Japanese Patent Application No. 2008-185061 claims priority, and its contents are hereby incorporated. [Prior Art] Electrical Li Electronics ♦ Electrical parts are used in the composition of copper alloys, etc.: Tin-plated conductive material obtained from tin. In order to improve the reliability of production and the reliability of thousands of parts, it is required to produce a tin-plated conductive material with excellent resistance to whiskers (whisker). Produced., Cafés Substanees, (4); ^=, plus - does not require the absence of the wrong pure tin plating. But it is known that ^ is not attached to the tin-like part of the whisker. And producing tin at the same time 'will not lead When the tin-based tin ore is reflowed, the electro-mineral layer can partially inhibit the natural generation of tin whiskers. However, for example, ^3 is released, so the contact between the female terminal and the male terminal is stressed. The tin whisker is caused by the connector, and finally the electronic appliance: 320516 200923142. The reliability of the piece will be reduced. The method of suppressing the tin whisker can be electroplated by expensive and valuable resources, but the manufacturing cost will become Extremely high. ▲Materials' connector terminals for semiconductor lead frames and electronic components, in addition to their whisker resistance, are also required for thermal properties (safety of electrical contact resistance). Tin metal is easy to use in air. Oxidation, an emulsified film is often formed on the surface thereof. Therefore, the material on the opposite side of the 'moon shape' of the material whose coating material is coated with the tin-plated layer will damage the oxide film and the contact should be I: soft The tin metal is electrically connected thereby, which makes the reaction speed of the diffusion alloying of the known tin-bismuth metal fast, so that the alloying reaction between the element and the tin in the material will simultaneously make the film of the layer; especially In a high temperature environment, 'will promote the alloying reaction between tin and copper, ^ completely alloy the tin layer, thus exposing the copper-tin alloy layer to the electric ore layer: oxidation: ίί surface forms copper oxide in addition to the formation of tin oxide film Membrane. It can't be easily damaged when it comes into contact with the contralateral material, so it will change to 15 (the temperature required by TC is higher than J, which makes it more serious. Layer thickness: delay: ensure its reliability' It has become necessary to adopt a method of increasing the tin plating for a long time until the tin layer is completely alloyed.... In the case of the terminal, the increase is two;;;='in the _ joint force causes the electric ore layer deformation 1 ^ degree due to the mother movement The end of the resistance;: the pull of the force), so that the embedding of your sauce α έ 人口 population this day gray oh, its sliding resistance (insert burden. D 乍 性 I I , , 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 516 It is extremely difficult to produce it at the same time and it has a tin-plated material of #,^, which has resistance to day and day and heat resistance. Nearly (4) there is a tin-plated conductive material that is highly resistant to purity and resistance. For example, on the surface of the wind, the proposal of Μ 为 is to set up a copper layer between the copper plating layer and the tin plating layer of the inter-layer of the copper substrate, and to form a silver layer by reflow treatment. Layer.",

利文獻2 3巾揭不在銅基材或Fe合金 進行鍍錫後再進行鍍銀, 砰芝表面 而形成銀-錫合金層者。 ’、^火 [專利文獻1]日本特開2005_353542號公報 [專利文獻2]日本特開2002-31 7295號公報 [專利文獻3]日本特開2002-220682號公報 【發明内容】 (發明欲解決之課題) ( 但具備前述銀_錫合金層之鍍錫導電材料中,形成鍍 銀層後,因藉由以鐘錫層炫融之程度之溫度進行回流處^ 或擴散退火而形成銀-錫合金,會使銀一錫合金之粒子分散 於整個錢錫層中。因此,為了提高其耐熱性,必須增加盆 銀含量,因此有鍍錫導電材料之製造成本會提高之問題;、 、本發明為鑑於前述情形所研創者,目的在提供一種鍍 =導電材料及其製造方法,以及使用此鍍錫導電材料之通 电零件,其中該鍍鎳導電材料可減少銀之使用量,因此可 以低成本製造’並可提高其耐熱性及抗晶鬚生成性。 7 320516 200923142 .(解決課題的手段) - 為了解決此課題,本發明人箄銥岛丄 & #經致力研究後結果,笋 見在鍍錫層上形成薄銀層時 ^ -俏夕、保持於退比錫熔融之溫度為 低之,皿度,即可使銀及錫擴散 為 ’表層形成銀-錫合金層。 、仃反應’而在鍍锡層之 本發明係根據此發現所研創者,在 錫導電材料包含:具有導電性之 &月中R之錢 .^ # ^ 之基材、形成在該具有導雷 土材上且由錫或錫合金組成之鍍錫層、及由銀 凝聚在前述鍍錫層之表層部分所形成銀—錫合金層。… 此構成之鍍錫導電材料,在Α 有由銀-錫粒子凝聚而成之銀—錫;:層=部分形成 層表面錫原子之移動,抑制錫 ^ ’口此可阻止鍵錫 子之存在亦可抑制錫晶鬚之成 錫粒 性之AgsSn金屬間化合物所形成。. ,、有導電 銀-錫粒子並非在沿基材姓 卜八與认入* 〇鐵锡層之積層方向之剖面 —疋’破聚在鑛錫層之表層。阳 此,即使減少銀之使用量,仍 =因 ^之:者,而可以低成本製作該鑛錫導電材料。 由銀,粒子凝聚在料層上所形叙銀—锡合 i層具有尚耐蝕性,因此在使 氧化。特別在高、”产φ Ά下可抑制鍍錫層表面 錫擴散而進行合金化之情形素”鍍錫層之 H ^ ^ m, 间$韻性之銀_錫粒子不會擴In the case of the copper substrate or the Fe alloy, the silver substrate is not plated with silver, and the silver-tin alloy layer is formed on the surface of the enamel. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei. No. 2002-31-7295 [Patent Document 3] JP-A-2002-220682 (Invention) Problem) (But the tin-plated conductive material having the silver-tin alloy layer is formed into a silver-plated layer, and then formed into a silver-tin by reflow or diffusion annealing at a temperature at which the tin-tin layer is melted. The alloy causes the particles of the silver-tin alloy to be dispersed in the entire tin tin layer. Therefore, in order to improve the heat resistance, it is necessary to increase the pot silver content, so that the manufacturing cost of the tin-plated conductive material may be improved; In view of the foregoing, the researcher aims to provide a plating=conductive material and a manufacturing method thereof, and an energized part using the tin-plated conductive material, wherein the nickel-plated conductive material can reduce the amount of silver used, and thus can be manufactured at low cost. 'The heat resistance and the resistance to whisker formation can be improved. 7 320516 200923142 . (Means for Solving the Problem) - In order to solve this problem, the inventor of the inventor Yukishima & When the bamboo shoots form a thin silver layer on the tin-plated layer, the temperature at which the tin is melted is lower than the temperature at which the tin is melted, and the silver and tin are diffused into a 'surface layer to form a silver-tin alloy layer. The present invention in the tin-plated layer is based on the discovery of the founder in the tin conductive material comprising: a substrate having conductivity & R in the middle of the ^. ^ ^, formed in the mine a tin-plated layer composed of tin or a tin alloy on the soil material, and a silver-tin alloy layer formed by agglomerating silver on the surface layer portion of the tin-plated layer.... The tin-plated conductive material of the composition is composed of silver- Tin-particles condensed into silver-tin;: layer=partially forming the movement of tin atoms on the surface of the layer, inhibiting the tin ^' mouth, which prevents the presence of bond tins and inhibits the tin whisker into a tin-grained AgsSn metal The compound is formed by .. , and the conductive silver-tin particles are not in the direction along the substrate and the layer of the layer of the yttrium-iron layer, which is folded into the surface of the tin layer. Reducing the amount of silver used, still = because of the::, can be produced at low cost The silver-tin-i layer formed by the aggregation of silver and particles on the material layer has corrosion resistance, so that the oxidation is carried out, especially in the high, "production of φ Ά, the tin diffusion on the surface of the tin plating layer can be inhibited. The situation is "H ^ ^ m of the tin plating layer, between the silver of the rhyme _ tin particles will not expand

放至鍍錫層,而以島狀存在於 曰 L 夕恳U m ,, 丹'、、口日日./旋秀人而合金化而得 之層上,因此提高電性接觸。 化向仔 Π ,由於銀—錫粒子係由具 320516 8 200923142 .有導電性之AgsSn金屬間化人你 _層完全合金化且表面!所生成,因此即使在鐘銀 間化合物進行電性接觸。 亦可藉由娜n金屬 錫声之;^由^可提π其耐熱性’因此亦無須過度增加鐘 型i接’不只可抑制锡晶鬚產生,在構成後合 1連接益端子等之情形亦可提高其插拔性。 可使述基材’使用至少其表面具有導電性之材料。 二與銅之合金、或F_Fe合金等 複合材料等。其中以導電性=:= 包覆導電性材料之 材料為佳。 Ν且㈣特性佳之銅與銅合金 其中’前述銀-錫合全屑夕 至〇.2_之範圍内較佳層之千均厚度可設It is placed on the tin-plated layer and is present in the form of an island on the layer of 曰L 恳 恳 U m , , Dan ', 口 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日 日Turning to Aberdeen, because the silver-tin particles are made of 320516 8 200923142. The conductive AgsSn intermetallics make you _ layer completely alloyed and surface! It is generated, so even if the compound is electrically contacted between the silver and silver compounds. It can also be made by the sound of n-metal tin; ^ can be improved by the heat resistance of π, so there is no need to excessively increase the clock type i connection, not only can suppress the generation of tin whiskers, in the case of forming a rear-connected connection terminal, etc. It can also improve its insertion and removal. The substrate ' can be made of a material having at least a surface having electrical conductivity. 2. Composite materials such as copper alloys or F_Fe alloys. Among them, a material in which a conductive material is coated with conductivity =: = is preferred. ( (4) Copper and copper alloys with good characteristics. The average thickness of the preferred layer in the range of silver-tin combined with the above-mentioned silver-tin can be set.

該情料,ϋ令銀-錫合金層之平 QIn this case, the silver-tin alloy layer is flat.

V :上而:::抑制從_層產生錫晶鬚及洲^ 因令Γ锡確Λ提/其抗晶鬚生成性及耐熱性。另一方面 觸電阻上升,、又可制銀因硫化而變色造成電性接. V 又了防止銲料濕潤度的劣化。 並非金:::形成極薄之_此 合物之微L::=:存在’而是呈現銀-錫金屬間化 此形成之不;;Γ:二:薄片分散於表面之狀態。如 層(銀-錫粒子)之阳:旦、 子度係私將銀-錫合金 、者里以鍍銀層上之附著區域面積平均 320516 200923142 .而得之厚度。 , 前述基材與前述鍍錫層 成之鍍銅層。 亦可形成由銅或銅合金組 並在藉由鍍銅層使前述基材表面之化學狀態均勻, 層,因此可提高鍵錫層之均勺素擴散至鑛錫 別之限疋,可為電鐘、非電解電鐘、取代電鍍。 則述基材上亦可形成用以防 散之擴散防止層。 土 ππτϋ京擴 ㈣’由於擴散防止層可以防止基材中之元素與錫之 二r化’因此可以提高該鑛錫導電材料之对熱性及鑛 曰”基材之接合強度。同時,形成擴散防止層之元素, =要為不易與前述基材中之元素反應者即可。在例如基材 為由銅或銅合金組成之情形,其擴散防止層可使用如Ni、.+V: Up and down::: Suppresses the generation of tin whiskers from the _ layer and the continents ^ Because of the tin smelting, its resistance to whisker formation and heat resistance. On the other hand, the contact resistance rises, and the silver can be discolored by vulcanization to cause electrical connection. V also prevents deterioration of solder wettability. It is not gold::: it is extremely thin. The micro-L::=: exists in the composition, but the silver-tin intermetallicization is formed. This is not formed; Γ: two: the state in which the sheet is dispersed on the surface. For example, the layer (silver-tin particles) of the yang: Dan, the child is the silver-tin alloy, the area of the adhesion area on the silver plated layer is 320516 200923142. And a copper plating layer formed on the substrate and the tin plating layer. It is also possible to form a layer of copper or a copper alloy and to make the chemical state of the surface of the substrate uniform by a copper plating layer, thereby improving the diffusion of the uniformity of the bond tin layer to the limit of the tin, which can be electricity Clock, electroless electric clock, replacement plating. A diffusion preventing layer for preventing diffusion may also be formed on the substrate. Soil ππτϋ京扩(4) 'Because the diffusion preventing layer can prevent the element and tin in the substrate from being r-', it can improve the bonding strength of the tin-conducting material to the thermal and ore" substrate. At the same time, the diffusion prevention is prevented. The element of the layer, if it is difficult to react with the element in the aforementioned substrate, for example, in the case where the substrate is composed of copper or a copper alloy, the diffusion preventing layer can be used, for example, Ni, .+

Cr、M〇、W、M、Ti、Zr、v、Ta、Nb 等;或此等之合金。 本發明中之鍍錫導電材料之製造方法為如前述之鲈 錫導電材料之製造方法,其中,具備:在具有導電性之^ 材上形成由錫或錫合金組成之鍍錫層之鍍錫層形成步驟、 在刖述鍍錫層上形成由銀或銀合金組成之銀層之銀層形成 步驟、及在形成有前述銀層之狀態下,保持於1〇。〇以上未 達100 C之溫度2秒鐘以上,使前述銀層之银與前述鑛錫 層之錫進行反應而形成銀-錫合金層之銀-錫合金層形成步 驟。 在此構成之鍍錫導電材料之製造方法中,經由銀一錫 10 320516 200923142 .合金層形成步驟,錫與銀反應形成銀_锡粒子(Α_金屬 .間化合物),H錫層表面形成銀_錫粒子凝聚而成之銀_錫合 金層。因令銀-錫合金層形成步驟中之温度條件在抓以 因此可促進銀與錫之反應。又因令銀_錫合金層形成步 =中之溫度條件未達⑽t,因此可抑制銀與錫過度反 = 2 = L子(Ag3Sn金屬間化合物)在沿基材與鑛 之剖面上分散於整個鑛錫層中,可使銀- 錫粒子凝聚在鍍錫層之表層。 f形成㈣之前,亦可具備於前述基材上 瓜成由銅或銅合金組成之_層之鍍銅層形成步驟。 步成=可:由鍵銅層形成步驟,而在基材與鐘錫層間 句:又=:,此鑛,層,可使基材表面之化學狀態均 別之限定,之品質。其中鐵鋼之形成方法並無特 可為電鍍、非電解電鍍、取代電鍍。 上开’亦可‘在前述基材 前述基材中之元素擴散之擴散防止層之擴 散防止層形成步驟。 /日、價 此時,可經由擴散防止層形, =·成擴散防止層。藉而=:錫 素由基材擴散至鍍錫層,因此 p止基材凡 埶性及铲錫厗盥π b了知阿该鍍錫導電材料之耐 j及鑛錫層與基材之緊密性。該擴散防止 並热特別之限定,可為例如濕式法之雷缺 7成方法 取代電鑛、化學轉化處理(鉻酸鹽處理等)解電鐘、 減鑛法。具有前述鑛銅層形成步 1之繼、 月形,亦可在鍍銅層 320516 11 200923142 形成步驟前具備擴散防止層形成步驟。 前述之銀層形成步驟中,可依電艘法、非電解電鍵 法、取代電鑛法及蒸鑛法中選出之電㈣,形成〇 〇〇ι至 0· 1 μιη厚之前述銀層。 此時,因令銀層之平均厚度為0.001 μπι以上,因此 可使銀與錫反應而確實地形成銀-錫合金層。另-方面,因 2層之平均厚度^ Q1 μιη以下,因此可使所形成之銀 θ中全部之銀反應,不只可抑制殘餘之銀因硫化而變色造 成電性接觸電阻提高,亦可防止銲料濕潤度劣化。 之形成極薄之⑽至。·1-,因此並非細密 t aS性連賴,而是呈現錢㈣該絲之凝聚體之形 =分散於鍍錫層之狀態。如此不均勾形成之銀層之平 而得之厚度。者里乂鍍錫層上之附者區域面積平均 驟之後’亦可具有對此鍍錫層 驟。此回流處理為加熱至錫金 之溶融處理。 在前述之鍍錫層形成步 〔把予加熱處理之回流處理步 屬之溶點而將鐘錫層之表層 中所’在㈣層形成步财可經由回流處理使鐘錫層 錫晶鬚產生。 口此可防止因此内部應力造成 前述基材亦可在加 _層及如述銀—錫合金層。 本發明之通電零件 料。 工至預定之形狀後形成前述鍍錫 之特彳政為使用前述之鍍錫導電材 320516 12 200923142 ,使用前述之鍍錫導電材料以構成如連接器端子、 •點、導線架料電零件’即可提高❹此等通電零 抗晶鬚生成性及耐熱性,可提供可靠度高之通電零件 形成有銀-錫合金廣之鑛錫導雷好 : 此之通電科。 料料料即可製成如 (發明的效果) 本發明在鑛錫層上形成銀層,並使銀與錫反應,即可 在鑛錫層表層上形成使銀_錫粒子凝聚而成之銀_錫合金 層,因此可提供-種抗晶鬚生成性及耐熱性佳之鑛錫 材料及其製造方法,以及通電零件。 【實施方式】 以下參照所附圖式說明本發明之第i實施形 導電材料1。 为 本實施形態之錢錫導電材料!,如第r圖所示,具備: 基材2、形成在此基材2之表面之鍍錄層%形成在鍵錄層 之表面之鑛銅層4、形成在鍍銅層4之表面之鑛錫層5、 及形成在鍍錫層5之表面之銀-錫合金層6。 基材2為由具有導電性之金屬所構成,本實施形態中 基本上由各種銅合金所構成,亦可使用鐵系合金。 人鍍鎳層3為基材2之元素之擴散防止層,由錄或鎳之 δ金所構成’且依電鐘法形成於基材2之表面。該鐘錄層 3之厚度係設定於0*01至1.0 μπί之範圍内。 鑛銅層4係做為鎳及錫之合金化之擴散防止層,由銅 ’銅口至所構成’且依電鑛法形成於鑛錄層3之表面。鍍 320516 13 200923142 <銅層4具有防止鍍鎳層3之鎳擴散至鍍錫層5之作用。具 .體而言,鍍銅層4之厚度係設定於〇丨至丨.〇 之範圍 内。 鍍錫層5係由錫或錫合金所構成,且經由電鍍或非電 解電鍍形成。該鍍錫層5之厚度基本上只要滿足銲料濕潤 度即可,視其用途可設定於〇.3至1〇叩之範圍内。該鍍 錫層5係經施以後述之回流處理(溶融處王里),使鑛錫^又 内部之應力釋出。 日 銀-錫合金層6係在沿著基材2與鑛錫層5之積層方 向之剖面上’由銀-錫粒子凝聚在鍍錫層5之表層部分所形 成。其中之銀-錫粒子為具有導電性之仏办金屬間化^ 物。銀-錫合金層6之平均厚度係設定於〇.〇〇2至〇 σ 之範圍内。銀-錫合金層6由於其厚度形成極薄之。: 至〇.2 μιη’因此並非細密之結晶性連續膜,而是呈現 粒或該微粒之凝聚體之形式均勻分散於鑛錫層之狀態。, 1之第3圖中所示之流程圖說明此鑛锡導電材料 於基材2之表面經由電心形成_ 形成步驟S1)。 其次’再於鍍鎳層3之表面經由電鍍形成鍍 銅層形成步驟S2)。 . 之後,再於鍍銅層4上經由電解電鍍 成鐘錫層5 (鍍錫層形成步驟幻)。 解电料 如此經由電鎮形成鍍錫層5後,再加熱至錫金屬之炫 320516 14 200923142 …點以上使錫料進行回流處理(回流處理步驟⑷。此時, •鍍銅層4之部分或全部形成銅-錫合金。 , :次’,如第2圖所示,依自電鍵、非電解電鐘、取 層^表^鐘法令選出之電鑛法,在經回流處理之鐘錫 曰&、形成〇.001至〇.1叩厚且由銀或銀合金組成 之銀層7(銀層形成步驟S5)。 將於該鐘錫層5之表面形成有銀層7之狀態下, 持周整為耽以上未達1〇〇t:之溫水浴中並保 成 ,使銀層7之銀與賴層5之錫進行反應形 錫粒子Ug3Sn金屬間化合物),如此形成銀—錫合金 =:錫合金層形成步驟⑹。此時,銀層7之全部銀與 錫反應形成銀-錫合金,因此,銀層7不會殘留。 2操作即可製成本實施形態之鐘錫導電材料卜此 鍍錫¥笔材料1係如第4圖中所示加工成由相…之公 ==與母端子沾組成之連接器端子8使用。不只連接 00而,亦可做為接點、導線架等通電零件使用。 ,實施形態中之鍍料電材料丨中,由於形成有由比 锡粒子(Ag3Sn金屬間化合物)凝聚在鑛錫層5之 :::刀而成之銀—錫合金層6,因此可阻礙鑛錫層5中錫 子二及局部集中,而抑制錫晶鬚產生。此外,此銀-錫粒 鬚i成^錫晶鬚之成長’而提高該鑛錫導電材料1之抗晶 錫声^時’由於銀—錫粒子(Ag3Sn金屬間化合物)凝聚於鍍 之表層,因此即使減少銀之使用量亦可提高其抗晶 320516 15 200923142 ,須生成性,而可以低成本製成此鍍錫導電材料工。 • 151時’在高溫之使用環境中,即使因鍍銅層4之銅擴 散至鏡錫層5而使銅-錫合金成長至表面而氧化,構成表面 所具備之銀-錫合金層6之銀一錫粒子(Ag3Sn金屬間化合物 亦不易氧化。因此可藉由銀—錫合金層6電性接觸,而可提 高該鑛錫導電材料i之耐熱性。由於如此可提高其耐孰 t,因此可使鍵錫層5變薄,不只可抑制錫晶鬚產生,同、 日寸在構成如第4圖所示之連接哭媸早β ,插拔性。 連接^子8之情形,可提高其 由於銀-錫合金層6之平均屋声执令少η 範圍内’如此可確實抑制從心二產生錫晶 其抗晶鬚生成性及耐熱性,同時可防止銀-錫人 層6不夠細密以致其銲料濕潤度降低。同時,由於可: 少銀之使用量’因此可以低成本製成此 料] 同時,由於在基材2與鑛錫層5之間形成==链 合金組成之_層3做綠材 、或鎳 因此藉由該鍍鎳層3可防止Μ ?:素之擴放防止層, 卞曰。J丨万止基材2中之銅等元 錫層5,而可提高鍍錫導電之 …、政至鍍 防止鍍錫層5之銲料濕潤度降低。 ’、可 由於鑛錄層3上形成右你 因此①成有軸層4做為鎳擴散防止居, :此猎由該鏡銅層4可防止鎳擴散至鍍錫層5中,而: 止鍍錫層5銲料濕潤度之劣化。 而可防 ,實施形態之錢錫導電材们,係經由在 成由鎳或鎳合金組成之錢鎳層3之朗層形成^ 16 320516 200923142 * S1在鍍鎳層3上形成由銅或銅合金έ且成 層形成步驟y, 孟,、且成之鑛銅層之艘銅 在鑛鋼層4上形成由錫或錫合金組成之鑛 、曰 又錫層形成步驟S3、對鍍錫層5施予加埶處又 回流處理步驟S4、在經由哕铲锡屏祀士此 ’、、、 之 声 在、、:由該鍍錫層形成步驟所形成之鍍錫 θ /成由銀或銀合金組成之銀^ 7之銀層形成步驟 沾、及維持在_以上未達⑽。C2秒鐘以上 5之錫進行反應形成銀-錫合金層6之银: 合金層形成步驟S6所製成。 錫 HTci Γπ因令銀—錫合金層形成步驟% #之溫度條件為 二二:可促進銀與錫反應。又因為令銀-錫合金層 之溫度條件為,c以下,因此可抑 錫過度反應。因此,可防止銀_錫粒子(Ag3Sn金屬間化人 =沿基材2與鑛錫層5之積層方向之剖面上分散於全; 錫層5’而可使銀一錫粒子凝聚在鑛錫層5之表層。之後再 /又/貝=水洽中即可進行銀_錫合金層形成步驟邡,因此不 使用…里加熱爐等’而可以低成本製造鑛錫導電材料1。 —銀層形成步驟S5中可依從電錢法、非電解電鍵法及 洛鑛法中選出之電鑛法,形成UG1至G.1 μπι厚之銀層7。 因此可促進銀與錫反應形成銀_錫粒子,不只可確實形成銀 -錫合金層6’同時可使銀層7中之銀全部反應,而可防止 銀層7殘留在鍍錫層5之表面。因此,因使銀層7之銀全 部反應,使純銀不會殘留於鍍錫層5表面,因此可防止表 面變色及電性接觸電阻上升。 由於在鍍錫層形成步驟S3之後,具有對該鍍錫層5 320516 17 200923142 •= 回流處理步驟S4,因此可經由該回流處理 ',鑛錫層形成步驟S3中鑛錫層5中所產生之内部應力, 而可防止由於内部應力造成錫晶鬚自然產生。 .㈣二、人再m 5圖說明本發明之第2實施樣態之錢錫 電材料11。 /本實施樣態之_導電材料U中,基材12係依零件 ^狀加卫’並具備:形成在該基材12之表面之鐘鋼層 ;形成本在鍍銅層14之表面之鍍錫層15、及形成在鍍錫 層15之表面之銀—錫合金層16。 基材12係與第!實施樣態同樣,基本上由各種銅合 金所構成,但亦可使用鐵系合金。 +鑛銅層係在基材12之表面,由依電鍍法或非電解 相形成之銅或銅合金所構成。㈣層14之厚产俜 設定於U1至之範圍内。 子度係 電解係由錫或錫合金所構成,且經由電鑛或非 所形成。該糊15之厚度,基本上只要滿足 度即可,依其用途可設定於0.3至10⑽之範圍 铲錫;在弟2貫施形態中,係設定在實用之情形中, =層15只局部地形成在基材12上之必要部分,益 鐘錫層15之内部應力之目的加熱至錫炫融: Μ度知予回流處理。 銀-錫合金層16,係經由在沿基材12與鏡錫層15之 :二=剖面上’由銀—錫粒子凝聚在鍍錫層15之表層 ^成。銀-錫合金層16之平均厚度係設定於Q 〇〇2 320516 18 200923142 .至0. 2 μιη之範圍内。 '法。以下再參照第6圖說明此鐘錫導電材料η之製造方 件之形狀加工(基材加工步驟涛 / 在基材12 t之未形成鍍錫層 蔽(遮蔽步驟s,l)。 Q乏邛刀進仃遮 *次,再於露出之基材12之表 電鐘形成_層14做為基材 ,電, 步驟s,2)。 恢煎防止層(鍍銅層形成 經由電鍍或非電解電鍍於鍍銅層点 15(鍍錫層形成步驟s,3)。 形成鍍錫層 於鐘錫層15之表面依從電鑛法、非電解電鐘、 厂 '又及条鍍法中選出之電鍍法,形成厚〇 001至0又i 叫之由銀或銀合金組成之銀層(銀層形成步驟s,5) 之後再於鑛錫層15之表面形成有銀層之狀能下, 潰在經調整至HTC以上未達⑽。C之溫水浴中,並則次 至20秒鐘,使銀層之銀與 ”寺 錫粒子α綱間化合進行反應形格 两』Κ 〇初j ’而形成銀—錫合金岸 錫合金層形成步驟s’6)。此時 θ 4 ^ . Τ疋以銀層之銀全部與錫及 應而不殘留銀層之方式進行銀_錫合金化。 如此形成之第2實施樣態之鍵錫導電材料11,盘前诚 晶鬚產生。 了错由銀-錫合金層16’抑制錫 以上說明本發明之實施樣態之鍍錫導電材料,但本發 320516 19 200923142 ‘月並$ 於此5&载’在不脫離本發明之技術性5、想之範 圍下亦可適當地變更。 _At上述中係以基材之表面形成有鍍鎳層者(第1實施樣 也)及形成有鑛銅層者(第2實施樣態)做說明,但本發明並. 不限定於此等,亦可在基材之表面直接形成鐘錫層。 、上述中又說明以金屬導電材料構成基材者,但本發明 並不限定於此’亦可以在非金屬材料表面包覆且有導電性 之材料而得者構成。其具體之例如Cu—Ni— “ 岭P系銅合金—系 二系銅合金、sus、Fe_42鎳合金等金屬導電材 麵”有機缚膜材或半導體、玻璃及陶变材料之表面包覆 、’5寻v電性金屬膜而得之非金屬材料。 整為、、=ι’η在銀—錫合金層形成步財係說明浸潰在經調 太:又C以上未達⑽。。之溫水浴中2秒鐘以上者, 旦又明亚不限定於此,亦可使用溫水浴以外之手段,在 鑛錫層之表面形成有銀声#能 _持2秒二上度irc以上未達 、、 工便銀興錫反應生成銀-錫粒子。 者、亦U兄明‘由電鑛或非電解電鐘形成錢錫層 者,但本發明並不限定於此,亦可依 成铲錨Μ甘士 依如熱次(Hot Dip)法形 心可二 5兄明在形成鑛锡層後進行回流處理者, -亦了如弟6圖所示不經回流處理即形成銀層。 =2實施樣態中說明不進行回流處理但亦可 二成Γ之形狀並形成鍍錫層後再進行回流處理。上述 中亦§兄明不騎錫導電村料11進行加熱處理者,但依其^ 20 320516 200923142 途亦可以錫不熔融之溫度(例如12〇它至2〇(rc)進行加熱 處理。 …' 在本實施樣態之模式圖中說明在基材—側之面上形 成有艘錫層及銀喝合金層者,但本發明並不限定於此,亦 可在基材之全面上形成鍍錫層及銀-錫合金層。 在本實施樣態之模式圖中又說明在基材之全表面上 形成鑛錫層及銀-錫合金層者,但本發明並不限定於此,亦 可在局部形成有鍍錫層及銀_錫合金層。 (實施例1) 以下說明驗證本發明之有效性所騎之碟認試 〇 結果Cr, M〇, W, M, Ti, Zr, v, Ta, Nb, etc.; or such alloys. The method for producing a tin-plated conductive material according to the present invention is the method for producing a tin-tin conductive material as described above, comprising: forming a tin-plated layer of a tin-plated layer composed of tin or a tin alloy on a conductive material; The forming step, the silver layer forming step of forming a silver layer composed of silver or a silver alloy on the tin plating layer, and the step of forming the silver layer are maintained at 1 Å. The silver-tin alloy layer forming step of the silver-tin alloy layer is formed by reacting the silver of the silver layer with the tin of the tin layer to form a temperature of not more than 100 C for more than 2 seconds. In the method for manufacturing a tin-plated conductive material, the silver-tin is reacted to form silver-tin particles (Α_metal. intermetallic compound) via silver-tin 10 320516 200923142. The alloy layer forming step, and the surface of the H tin layer forms silver. _ Tin particles are agglomerated into a silver-tin alloy layer. Since the temperature conditions in the silver-tin alloy layer forming step are grasped, the reaction between silver and tin can be promoted. Moreover, since the temperature condition of the silver-tin alloy layer forming step = is less than (10) t, it is possible to suppress excessive silver and tin = 2 = L (Ag3Sn intermetallic compound) dispersed throughout the cross section of the substrate and the ore. In the tin layer, silver-tin particles can be condensed on the surface of the tin plating layer. Before f is formed into (4), a step of forming a copper plating layer of a layer composed of copper or a copper alloy on the substrate may be provided. Step = =: the step of forming the copper layer by the key, and between the substrate and the layer of the tin layer: again =:, the ore, the layer, the chemical state of the surface of the substrate can be uniformly defined, the quality. Among them, the method of forming iron steel is not specifically for electroplating, electroless plating, or electroplating. The upper opening 'may also be a diffusion preventing layer forming step of the diffusion preventing layer which diffuses the elements in the substrate described above. / Day, price At this time, the layer shape can be prevented by diffusion, and the diffusion prevention layer can be formed. Borrowing =: tin sulphide diffuses from the substrate to the tin-plated layer, so the p-stop substrate is sturdy and the sputum 厗盥 π b knows that the tin-plated conductive material is resistant to j and the tin-plated layer is tight with the substrate. Sex. The diffusion prevention heat prevention is particularly limited, and may be, for example, a wet method of the wet method, a method of replacing the electric ore, a chemical conversion treatment (chromate treatment, etc.), an electric discharge clock, and a reduced ore method. The step of forming the mineralized copper layer in the form of the step 1 may be followed by a step of forming a diffusion preventing layer before the step of forming the copper plating layer 320516 11 200923142. In the silver layer forming step, the silver layer selected from the electric boat method, the electroless magnetic key method, the electric ore method and the steaming method may be formed to form the silver layer having a thickness of 〇 〇〇ι to 0·1 μηη. At this time, since the average thickness of the silver layer is 0.001 μm or more, silver and tin can be reacted to form a silver-tin alloy layer. On the other hand, since the average thickness of the two layers is less than Q1 μηη, all the silver in the formed silver θ can be reacted, and not only the residual silver can be suppressed from being discolored due to vulcanization, but also the electrical contact resistance can be improved, and the solder can be prevented. The degree of moisture is deteriorated. The formation is extremely thin (10) to. · 1-, so it is not a fine t aS-like connection, but presents money (4) the shape of the agglomerate of the wire = dispersed in the state of the tin-plated layer. The thickness of the silver layer formed by such unevenness. The tin-plated layer may also be present after the average area of the donor layer on the tin-plated layer. This reflow treatment is a melt treatment of heating to tin gold. In the above-mentioned tin plating layer forming step (the melting point of the reflow processing step of the preheating treatment and the formation of the (four) layer in the surface layer of the tin tin layer can be made by the reflow treatment to form the tin tin whisker. This prevents the internal stress from being caused by the internal substrate, as well as the layer of silver and the layer of silver-tin alloy. The energized parts of the present invention. The above-mentioned tin-plated conductive material 320516 12 200923142 is used to form the tin-plated conductive material 320516 12 200923142, and the above-mentioned tin-plated conductive material is used to constitute an electrical component such as a connector terminal, a dot, and a lead frame. It can improve the generation and heat resistance of these energized zero-resistance whiskers, and can provide high-reliability electric parts. The silver-tin alloy is widely distributed with tin-lead. The material material can be made into (the effect of the invention). The present invention forms a silver layer on the tin layer and reacts silver with tin, thereby forming silver which is formed by agglomerating silver-tin particles on the surface of the tin layer. _ Tin alloy layer, therefore, it is possible to provide a tin-based material which is excellent in whisker-forming property and heat resistance, a method for producing the same, and an energized component. [Embodiment] Hereinafter, a conductive material 1 of the i-th embodiment of the present invention will be described with reference to the accompanying drawings. It is the money tin conductive material of this embodiment! As shown in the rth diagram, the substrate 2 has a plating layer formed on the surface of the substrate 2, and a mineralized copper layer 4 formed on the surface of the key recording layer, and a mineral formed on the surface of the copper plating layer 4. The tin layer 5 and the silver-tin alloy layer 6 formed on the surface of the tin-plated layer 5. The base material 2 is made of a metal having conductivity. In the present embodiment, it is basically composed of various copper alloys, and an iron-based alloy may be used. The nickel-plated layer 3 is a diffusion preventing layer of an element of the substrate 2, which is composed of δ gold of nickel or nickel, and is formed on the surface of the substrate 2 by an electric clock method. The thickness of the clock recording layer 3 is set in the range of 0*01 to 1.0 μπί. The mineralized copper layer 4 is used as a diffusion preventing layer for alloying of nickel and tin, and is formed of a copper 'copper port' and formed on the surface of the mineral recording layer 3 by an electric ore method. Plating 320516 13 200923142 <The copper layer 4 has a function of preventing nickel of the nickel plating layer 3 from diffusing to the tin plating layer 5. The thickness of the copper plating layer 4 is set in the range of 〇丨 to 丨.〇. The tin-plated layer 5 is made of tin or a tin alloy and is formed by electroplating or electroless plating. The thickness of the tin-plated layer 5 is basically as long as the solder wettability is satisfied, and may be set within a range of 〇3 to 1 视 depending on the application. The tin-plated layer 5 is subjected to a reflow treatment (the molten portion) to be described later, and the stress inside the ore is released. The silver-tin alloy layer 6 is formed by agglomerating silver-tin particles on the surface layer portion of the tin-plated layer 5 in a cross section along the lamination direction of the substrate 2 and the tin-plated layer 5. Among them, the silver-tin particles are electrically conductive intermetallic compounds. The average thickness of the silver-tin alloy layer 6 is set in the range of 〇.〇〇2 to 〇 σ. The silver-tin alloy layer 6 is extremely thin due to its thickness. : 〇.2 μιη' is therefore not a fine crystalline continuous film, but is in a state in which particles or aggregates of the particles are uniformly dispersed in the tin-plated layer. The flow chart shown in Fig. 3 of Fig. 1 illustrates that the tin-conducting conductive material is formed on the surface of the substrate 2 via the core _ forming step S1). Next, a step of forming a copper plating layer by electroplating on the surface of the nickel plating layer 3 is carried out to form step S2). Thereafter, the tin-plated layer 5 is electroplated on the copper-plated layer 4 (the tin-plated layer forming step is magical). After the electrolysis is formed into the tin-plated layer 5 through the electric town, it is heated to the tin metal 320516 14 200923142 ... to make the tin material reflow treatment (reflow treatment step (4). At this time, the part of the copper plating layer 4 or All formed copper-tin alloy. , : times', as shown in Fig. 2, the electric ore method selected from the electric key, the electroless electric clock, the layering method, the clock method, and the rectification treatment of the tin tin &; forming a silver layer 7 of 〇.001 to 〇.1 叩 thick and composed of silver or a silver alloy (silver layer forming step S5). In the state in which the silver layer 7 is formed on the surface of the tin layer 5, The whole week is not more than 1〇〇t: the warm water bath is preserved, so that the silver of the silver layer 7 and the tin of the Lai layer 5 react with the tin-shaped Ug3Sn intermetallic compound), thus forming a silver-tin alloy= : Tin alloy layer forming step (6). At this time, all the silver of the silver layer 7 reacts with tin to form a silver-tin alloy, and therefore, the silver layer 7 does not remain. 2 operation can be made into the clock-tin conductive material of the present embodiment. The tin-plated material 1 is processed as shown in Fig. 4 to be used as the connector terminal 8 composed of the male and female contacts. It can be used not only for 00 but also for energized parts such as contacts and lead frames. In the plating material 丨 in the embodiment, since the silver-tin alloy layer 6 formed by the tin-particles (Ag3Sn intermetallic compound) condensed on the tin-plated layer 5::: is formed, the tin can be inhibited. In the layer 5, the tin is partially concentrated and the tin whisker is suppressed. In addition, the silver-tin particles must be grown into the tin whisker to increase the tin-resistance of the tin-based conductive material 1 due to the aggregation of the silver-tin particles (Ag3Sn intermetallic compound) on the surface of the plating. Therefore, even if the amount of silver used is reduced, the anti-crystal 320516 15 200923142 can be improved, and the tin-plated conductive material can be produced at low cost. • At 151 pm, even in the high-temperature use environment, even if the copper of the copper plating layer 4 diffuses to the mirror tin layer 5, the copper-tin alloy grows to the surface and oxidizes, and the silver of the silver-tin alloy layer 6 which is formed on the surface is formed. A tin particle (Ag3Sn intermetallic compound is also not easily oxidized. Therefore, the silver-tin alloy layer 6 can be electrically contacted, thereby improving the heat resistance of the tin-conducting conductive material i. Therefore, the resistance to strontium can be improved. Thinning the key tin layer 5 not only suppresses the generation of tin whiskers, but also forms a connection as shown in Fig. 4, which is as shown in Fig. 4, and inserts and pulls. The silver-tin alloy layer 6 has an average house sound command with a small η range. This can indeed suppress the generation of tin crystals from the core and its resistance to whisker formation and heat resistance, while preventing the silver-tin layer 6 from being fine enough to be The solder wettability is reduced. At the same time, because it can: use less silver 'so it can be made at low cost】 At the same time, because of the formation of == chain alloy composition between the substrate 2 and the tin-plated layer 5 The green material, or nickel, is thus prevented from being expanded by the nickel plating layer 3卞曰 丨 丨 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材 基材On the right side, you have a shaft layer 4 as a nickel diffusion prevention. This hunting copper layer 4 prevents nickel from diffusing into the tin plating layer 5, and: the tin plating layer 5 is deteriorated in solder wettability. However, it is preventable that the Qianxi conductive material of the embodiment is formed by copper or copper on the nickel plating layer 3 by forming a lan layer of nickel layer 3 composed of nickel or a nickel alloy. The alloy is formed into a layer and the layer forming step y, the copper of the ore-bearing copper layer forms a mineral consisting of tin or tin alloy on the ore layer 4, a tin-tin layer formation step S3, and a tin-plated layer 5 At the pre-twisting point, the reflowing step S4 is performed, and the tin-plated θ / formed by the tin-plating layer forming step is composed of silver or a silver alloy. The silver layer of silver 7 is formed by the step of immersion and is maintained at _ or less (10). The tin of 5 seconds or more is reacted to form a silver-tin alloy layer 6 : The alloy layer is formed in the step S6. The tin HTci Γ π is caused by the silver-tin alloy layer forming step %#. The temperature condition is two or two: the silver and tin can be promoted, and the temperature condition of the silver-tin alloy layer is Since c is below, it can suppress excessive reaction of tin. Therefore, it is possible to prevent silver-tin particles (Ag3Sn intermetallicization person = dispersed in the cross section along the lamination direction of the substrate 2 and the tin-plated layer 5; the tin layer 5' The silver-tin particles can be condensed on the surface layer of the tin-plated layer 5. After that, the silver-tin alloy layer forming step can be performed after the /By=water contact, so that the furnace can be used without being used. Manufacture of tin-conducting conductive material 1. - Silver layer forming step S5 can be formed by the electro-mine method selected from the electric money method, the electroless electric key method and the Luo ore method to form a silver layer 7 of UG1 to G.1 μπι thick. Therefore, silver and tin can be promoted to form silver-tin particles, and not only the silver-tin alloy layer 6' can be formed but also all the silver in the silver layer 7 can be reacted, and the silver layer 7 can be prevented from remaining on the surface of the tin-plated layer 5. . Therefore, since silver is completely reacted in the silver layer 7, pure silver does not remain on the surface of the tin-plated layer 5, so that surface discoloration and electrical contact resistance can be prevented from rising. Since after the tin plating layer forming step S3, there is the tin plating layer 5 320516 17 200923142 •= the reflow processing step S4, the ferrite layer can be formed in the tin layer 5 in the step S3 via the reflow process. Internal stress prevents the tin whiskers from naturally occurring due to internal stresses. (4) Second, the human figure 5 shows the second embodiment of the present invention. In the conductive material U of the present embodiment, the substrate 12 is reinforced by a part and has a bell steel layer formed on the surface of the substrate 12; and plating is formed on the surface of the copper plating layer 14. The tin layer 15 and the silver-tin alloy layer 16 formed on the surface of the tin-plated layer 15. Substrate 12 is the same as the first! Similarly, the embodiment is basically composed of various copper alloys, but an iron-based alloy can also be used. The +mine copper layer is formed on the surface of the substrate 12 and is composed of copper or a copper alloy formed by electroplating or electroless phase. (4) Thickness of layer 14 is set within the range of U1. The electron system is composed of tin or a tin alloy and is formed by electrowinning or non-ferrous metal. The thickness of the paste 15 is basically as long as the degree of satisfaction is sufficient, and the tin can be set in the range of 0.3 to 10 (10) depending on the application; in the case of the second embodiment, the setting is in the practical case, and the layer 15 is partially localized. The necessary portion formed on the substrate 12 is heated to the tin-smelting purpose for the purpose of the internal stress of the tin layer 12: The temperature is known to be refluxed. The silver-tin alloy layer 16 is formed by agglomerating silver-tin particles on the surface layer of the tin-plated layer 15 along the substrate 12 and the tin layer 15; The average thickness of the silver-tin alloy layer 16 is set in the range of Q 〇〇 2 320516 18 200923142 . to 0. 2 μιη. 'law. The shape processing of the manufacturing part of the clock tin conductive material η will be described below with reference to Fig. 6 (the substrate processing step Tao / no tin plating layer is formed on the substrate 12 t (shading step s, l). The knife is cut into the *, and then the exposed clock of the substrate 12 is formed as a substrate, electricity, steps s, 2). The frying prevention layer (the copper plating layer is formed on the copper plating layer 15 by electroplating or electroless plating (tin plating formation step s, 3). The tin plating layer is formed on the surface of the tin tin layer 15 in accordance with the electromineral method, non-electrolysis The electroplating method selected from the electric clock, the factory's and the strip plating method forms a silver layer composed of silver or a silver alloy (the silver layer forming step s, 5) and then the tin layer. The surface of the 15 is formed with a silver layer, and the crucible is adjusted to a temperature above the HTC (10) C in a warm water bath, and then to 20 seconds, so that the silver layer of silver and "Temple tin particles" The formation of the reaction shape and the shape of the two Κ 〇 j j ' 形成 形成 银 银 银 银 银 银 银 银 银 银 银 银 银 银 银 银 银 银 银 银 银 θ θ θ θ θ θ θ θ θ θ θ θ θ θ θ θ Silver-tin alloying is carried out in the form of a silver layer. The tin-tin conductive material 11 of the second embodiment thus formed is produced by the disk front crystal. The silver-tin alloy layer 16' suppresses tin. Implementing a tin-plated conductive material of the form, but the present invention does not deviate from the technology of the present invention by 320516 19 200923142 'month and $5& In the case of the above-mentioned range, the nickel-plated layer (the first embodiment) and the copper-bearing layer (the second embodiment) are formed. However, the present invention is not limited thereto, and a clock tin layer may be directly formed on the surface of the substrate. Further, the above description also exemplifies a substrate made of a metal conductive material, but the present invention is not limited thereto. It can be composed of a material coated with a non-metallic material and having conductivity. Specifically, for example, Cu-Ni-"Ling P-based copper alloy-based two-line copper alloy, sus, Fe_42 nickel alloy and other metal conductive surface "Non-bonded film or surface coating of semiconductor, glass and ceramic materials, non-metallic materials obtained from '5 vv electrical metal film." The whole, and ι'η form a step in the silver-tin alloy layer. It is indicated that the impregnation is in the temperature of the temperature: more than C is not reached (10). In the warm water bath for more than 2 seconds, Dan and Mingya are not limited to this, you can also use the means other than warm water bath, in the tin layer The surface is formed with silver sound #能_ holding 2 seconds two degrees above the irc, but the work will be silver The silver-tin particles are formed. The U-Ming Ming' is formed by an electric ore or an electroless electric clock. However, the present invention is not limited thereto, and may be used as a shovel anchor. Hot Dip) The method can be reflowed after forming the tin layer. - Also, as shown in Figure 6, the silver layer is formed without reflow treatment. It can be treated but it can be formed into a tin-plated layer and then reflowed. The above-mentioned § brothers do not ride the tin conductive village material 11 for heat treatment, but according to its ^ 20 320516 200923142 The temperature of the melting (for example, 12 Torr to 2 Torr (rc) is heat-treated. In the mode diagram of the present embodiment, a tin layer and a silver alloy layer are formed on the surface of the substrate - side. However, the present invention is not limited thereto, and may be formed on the entire substrate. Tin plating layer and silver-tin alloy layer. In the mode diagram of this embodiment, the formation of the tin-plated layer and the silver-tin alloy layer on the entire surface of the substrate is also described. However, the present invention is not limited thereto, and a tin-plated layer and silver may be partially formed. _ tin alloy layer. (Embodiment 1) The following describes the verification of the effectiveness of the present invention.

首先做為利用前述第1實施形態之Ni/Cu/Sn之3月 電艘之實施例,以做為高強度端子材料之代表之含有W _· 〇% Ζη.、Κ G/0、Sn: G. 5%、Si: G. 5%之板厚 0. 25 _ 之 銅口金板為基材’形成鑛鎳層、鑛銅層、鍍錫層,並進行 ^處理後,再於_層上形成It銀層,並於4Gt之溫水 又/貝1〇心鐘’使其形成銀—錫合金層而製作試驗片。比 ^例中則:作不形成銀_錫合金層之試驗片。.使用此等試驗 片评估其抗晶鬚生成性及耐熱性。 才几晶鬚生成性之測讀由 形係使用外部壓頭法=调查外部應力之影響之情 情形則使用自然放置法。—鍍層之内部應力之影響之 依外部壓頭法係在靜止狀態下在其末端以枝^随之 i轭加載重300 g,於室溫費時12〇小時進行加速試驗 21 320516 200923142 後,再藉由電子顯微鏡(SEM)確認錫晶鬚之產生狀態,並以 锡晶鬚最長時之錫晶鬚長度評估抗晶鬚生成性。 自然放置法則於自然環境中放置6個月以上後,再經 ,子顯微鏡(SEM)確認錫晶鬚之產生狀態,並以錫晶鬚最Z 時之錫晶鬚長度評估抗晶鬚生成性。 ' 耐熱性之試驗係以16(rcxl 000小時、1δ(Γ(:χΐ〇〇〇小 時進行加熱試驗,同時料加熱試驗前後之 係依照JIS-C-5402,蕤由4妓早垃鎞+ 任啤%阻 猎由4鳊子接觸電阻試驗機(山崎精 ^研九所製f113—AU)’以滑動式(1_)測定〇至 g之载重變化-電性接觸電阻。 二i至4及比較例1、2之電链層構成及抗晶 之評估結果如表1所示。抗晶鬚生成性 之汗估中,將自然放置法之評估結果表示於 例1中電鍍後之試驗片之電子顯Μ 發月 7Β圖所示。 -子顯侧片如第Μ圖、第First, as an example of the March electric boat using the Ni/Cu/Sn according to the first embodiment, W _· 〇% Ζη., Κ G/0, and Sn are represented as high-strength terminal materials. G. 5%, Si: G. 5% of the plate thickness of 0. 25 _ The copper plate of the copper plate is the base material 'forming a nickel layer, a copper layer, a tin layer, and then treating it, then on the layer A white silver layer was formed, and a test piece was produced by forming a silver-tin alloy layer in a warm water of 4 Gt. In the case of the example: a test piece in which no silver-tin alloy layer was formed. These test pieces were used to evaluate their resistance to whisker formation and heat resistance. The measurement of the generation of whiskers is performed by the external indenter method = the influence of external stress is investigated. The natural placement method is used. - The influence of the internal stress of the coating is based on the external indenter method. At the end, the load is 300 g at the end, and the acceleration is tested at room temperature for 12 hours. 21 320516 200923142 The state of generation of tin whiskers was confirmed by an electron microscope (SEM), and the whisker formation property was evaluated by the tin whisker length at the longest tin whisker. After the natural placement method was allowed to stand in the natural environment for more than 6 months, the state of the tin whiskers was confirmed by a sub-microscope (SEM), and the whisker formation property was evaluated by the tin whisker length at the most Z of the tin whiskers. ' The test for heat resistance is 16 (rcxl 000 hours, 1δ (Γ (: χΐ〇〇〇 hour heating test, and before and after the heating test according to JIS-C-5402, 蕤 from 4妓早鎞+ The beer is blocked by a 4-head contact resistance tester (f113-AU made by Yamazaki Seiko). The sliding load (1_) is used to measure the load change from 〇 to g - electrical contact resistance. II to 4 and comparison The evaluation results of the composition of the electric chain layer and the anti-crystallization of Examples 1 and 2 are shown in Table 1. In the evaluation of the anti-parent generation sweat, the evaluation results of the natural placement method are shown in the electrons of the test piece after electroplating in Example 1. The Μ Μ Β Β Β Β Β 。 。 。 - - - - - - - - - -

320516 22 200923142 如第7A圖、第7B圖所示,確認鍍錫層表面形成有由 1〇至50 nm之微粒或不連續之薄片組成之銀—錫合金層。 該銀-錫粒子如後述經由XRD(X射線繞射,x_ray diffraction)測定,判定為AgsSn金屬間化合物,確認具 有比純錫為高之硬度及耐蝕性。又確認此銀_錫粒子層即使 於室溫放置長時間(半年以上),亦未全面分散域锡層 内,而極為安定。如此,確認依本發明之製造方法,可製 造在沿基材與鐘錫層之積層方向之剖面上,具備由銀-錫粒 子凝聚在鑛錫層之表層部分所形成之銀-錫合金層之鍍錫 導電材料。 由於外部應力而發生晶鬚之狀況之例,在第Μ圖中 ,不評估在表面形成有銀—錫合金層之本發日糊*之電梦 η鬚」=sem觀察之結果,在第_中表示評估未 瓜成銀-錫合金層之比較例2之電320516 22 200923142 As shown in Fig. 7A and Fig. 7B, it was confirmed that a silver-tin alloy layer composed of fine particles of 1 Å to 50 nm or discontinuous sheets was formed on the surface of the tin plating layer. The silver-tin particles were determined to be AgsSn intermetallic compounds as measured by XRD (X-ray diffraction, x-ray diffraction), and were confirmed to have higher hardness and corrosion resistance than pure tin. It was also confirmed that the silver-tin oxide layer was not completely dispersed in the tin layer even if it was left at room temperature for a long period of time (for more than half a year), and was extremely stable. Thus, it was confirmed that the manufacturing method according to the present invention can produce a silver-tin alloy layer formed by agglomerating silver-tin particles on the surface layer portion of the mineral tin layer in a cross section along the lamination direction of the substrate and the tin-tin layer. Tin-plated conductive material. An example of the condition of whisker due to external stress, in the figure, the result of observing the electric dream η s s sem of the silver-tin alloy layer formed on the surface is not evaluated. In the evaluation of the electricity of Comparative Example 2, which was not formed into a silver-tin alloy layer

觀察之結果。本發明之表面报占女& 鑌便、、二SEM 、 心成有銀-錫合金層之試檨ψ, 並未每現造成電路短路問題在 7 /矣w m ⑽之針㈣晶鬚。相對地在一般 畔多錢曰考$ 9之鍍錫層(比較例2)卜則產生 卉夕針狀阳彡貞。再比較錫晶鬚最長之具许士欲 短約為7 _,在比較例 長又,本發明例4較 ^ π , Τ成長為長達釣為62 um之视曰 硪,因此可知本發明可極有 錫日日 ..L 有效地抑制錫晶鬚之產生。 所示,在形成有銀-錫合金芦之太旅 例1至4中,錫晶鬚之最長長度係隨銀錫人今:本發明 少而稍微增長’但均為短之 錫口金層之厚度減 斗。另一古 硬1 〇 _,而抑制錫晶髮太 生另*面,在来形成銀-踢合金層之比較例12= 320516 23 200923142 .極長之22 _、62 可知有晶鬚之問題。特別是從本發 .明例1與比較例1、本發明例4與比較例2之最長晶鬚長 ,來看,確認在鍍錫層厚之情形,抑制晶鬚產生之效果更 南。 在耐熱性方面,在本發明例j至4中,確認因形成於 面之銀—錫合金層肖’在電鍍後(初期)之電性接觸電阻值 二/、比車乂例1、2相同,但加熱試驗後則導電性有大差異。 特別是,在表面形成有銀-錫合金層之本發明例丨至4 ^, =電性接觸電阻值會隨銀—錫合金層之厚度增加而減少,即 ^仃1000小時加熱試驗亦均無法確認有比初期之值大 η’人L具有優良之耐熱性。另—方面,在未形 =接=層之比較例卜2中,在胸小時加熱試驗後, 電阻值比初期值大幅增加,因此可知不星有 =耐熱性。同時,比較本發明例1與本發明例/,、_.錫 層之厚度厚者耐熱性較佳。 ”鍍錫 (實施例2) 做為利用前述第i實施形態之i心4之3 只靶例,以做為高導電端 θ ^ ρ.η Πης〇/ , 何卄之代表之含有 成鑛鎳々* ·4·之鋼合金板為基材,形 錫層二成:tr錢錫層,並進行回流處理後,再於錄 其形成Λ於:之溫水中浸潰10秒鐘,使 :踢合金層之試驗片。使用此等試驗=二不形成 性及耐熱性。評估方法如實施例!。片千估其抗晶鬚生成 320516 24 200923142 本發明例5至7盥比鲂彻q 士 a $ 曰媢4 A we /叙例3中之電鍍層之構成及其抗 曰曰鬚生成性及耐熱性之評估結果如表2 [表2] 不。 厚度 本發明 例5 0.4 本發明 例6 0.4 本發明 例7 0.4 比較例3 0.4 鑛錄層 β\Ά 鍛銅層 βία 回 鐘錫層流鑛銀層 晶鬚帚接觸^5ηΩ 50gf)| 長長度 Um 160°C xlOOOh 180°C xlOOOh 0.3Observe the results. The surface of the present invention accounts for the female & sputum, two SEM, and the core-silver-tin alloy layer test, and does not cause a short circuit problem in the 7 /矣w m (10) needle (four) whiskers. Relatively in the general side, the money is more than $9 of the tin-plated layer (Comparative Example 2), which produces Huizhou needle-shaped impotence. In addition, the longest tin whisker has a short length of about 7 _, and in the comparative example, the inventive example 4 is more than π, and the Τ grows to a length of 62 um, so the invention can be seen. Extremely tin day..L effectively suppresses the generation of tin whiskers. As shown in the examples 1 to 4 in which silver-tin alloy reeds are formed, the longest length of tin whiskers is in accordance with the silver tin: the invention is less and slightly increased 'but the thickness of the short tin-gold layer is short. Reduce the fight. Another ancient hard 1 〇 _, while suppressing the tin crystal hair too much surface, in the formation of the silver-kick alloy layer of the comparative example 12 = 320516 23 200923142. Very long 22 _, 62 known to have problems with whiskers. In particular, from the present invention, the longest whisker length of the first example and the comparative example 1, the inventive example 4 and the comparative example 2, it was confirmed that the effect of suppressing the generation of whiskers was further improved in the case where the tin plating layer was thick. In terms of heat resistance, in the inventive examples j to 4, it was confirmed that the electrical contact resistance value of the silver-tin alloy layer formed on the surface was the same after the electroplating (initial), and was the same as the ruthenium examples 1, 2 However, there is a big difference in electrical conductivity after the heating test. In particular, in the case of the present invention in which a silver-tin alloy layer is formed on the surface, the electrical contact resistance value decreases as the thickness of the silver-tin alloy layer increases, that is, the heating test for 1000 hours is impossible. It was confirmed that it was larger than the initial value η' human L had excellent heat resistance. On the other hand, in the comparative example 2 of the unformed=connected layer, after the chest-hour heating test, the electric resistance value was greatly increased from the initial value, so that it was found that there was no heat resistance. At the same time, it is preferable to compare the thickness of the first embodiment of the present invention with the inventive example/, the tin layer to have a high heat resistance. Tin plating (Example 2) As the target of the i-heart 4 of the above-described i-th embodiment, it is used as a high-conductivity end θ ^ ρ.η Πης〇/, which is representative of ore-forming nickel. 々* ·4· steel alloy plate is the base material, the tin layer is 20%: tr money tin layer, and after reflow treatment, it is then immersed in the warm water for 10 seconds to make: kick Test piece of alloy layer. Use these tests = two non-formability and heat resistance. The evaluation method is as in the example! The piece is estimated to have its anti- whisker generation 320516 24 200923142 The present invention examples 5 to 7 盥 鲂 q q 士 a The composition of the plating layer in the 曰媢4 A we / the ninth example and the evaluation results of the resistance to whisker formation and heat resistance are shown in Table 2 [Table 2] No. Thickness Example 5 of the invention 0.4 Example 6 of the invention 0.4 Inventive Example 7 0.4 Comparative Example 3 0.4 Mineral layer β\Ά Forged copper layer βία Back bell tin layer flow silver layer whisker contact ^5ηΩ 50gf)|Long length Um 160°C xlOOOOh 180°C xlOOOh 0.3

在其抗晶鬚生成性方面,形成有銀—錫合金 明例”7’與未形成銀-錫合金層之比較例3比二2 :::鬚均為-且呈突出狀者,因此可知抑制錫晶鬚產生 =性方面,在表面形成有銀,合金層之本發明 歹1 即使在長時間加熱試驗之情形,亦均益法確 财比㈣值大幅增加,因此可知具有優良之 = 二成銀—錫合金層之比較例3中,確認在加数 5式驗後,电性接觸電阻則大幅增加。 … (實施例3) 做為利用前述第彳每 At 夕杏^ 、w 弟1 形怨之Nl/Cu/Sn之3層電鍍 之貝盼以做為-般端子材料之代表之Cu-Zn合金之板 厚0.64 mm者為基材,形成鑛鎳層、鑛銅層、鐵錫層,並 320516 25 200923142 .進行回流處理後,再於鍍錫厗 ,、四欢中、冥、、主ϊη u s上形成鍍銀層,並於40°C之 — /又/貝 夕、釦,使其形成銀-錫合金層再|y作n驗 二:比較例t則製作不形成銀 :再= 例卜2。㈣生成性及耐熱性。評估方法如實施 本發明例8與比較例4由+ $ 中之電鍛層之構成及其抗晶鬚 生成性及耐熱性之評估結果如表3所 [表3]In terms of its whisker resistance, the silver-tin alloy case "7" is formed and the silver-tin alloy layer is not formed. Comparative example 3 is more than -2::: must be - and is prominent, so it is known Inhibition of tin whisker generation = the aspect of the invention, the formation of silver on the surface, the alloy layer of the invention 歹 1 Even in the case of a long-time heating test, the average value of the method is greatly increased, so it is known that there is excellent = two In Comparative Example 3 of the silver-tin alloy layer, it was confirmed that the electrical contact resistance was greatly increased after the addendum 5 test. (Example 3) As the use of the aforementioned third 彳 every A 夕 杏 ^, w brother 1 The three-layer plating of Nl/Cu/Sn is a base material of Cu-Zn alloy with a thickness of 0.64 mm, which is a base material, forming a mineral nickel layer, a copper ore layer, and a tin-iron. Layer, and 320516 25 200923142. After the reflow treatment, a silver plating layer is formed on the tin-plated crucible, the four-winner, the meditation, and the main ϊ us, and at 40 ° C - / again / bei, buckle, The silver-tin alloy layer was formed and then y was used as the second test: in the comparative example t, no silver was formed: again = example 2. (4) Productivity and heat resistance. Evaluation method The evaluation results of the composition of the electric forging layer of +8 and the anti-sparitability and heat resistance of Example 8 and Comparative Example 4 of the present invention are shown in Table 3 [Table 3].

銅煳 鏡層 ¢4 PG例 5 2 0.80.8 回流處理 + + 不 層 艮 鍍 A 04 晶鬚最 電性接觸電阻(ιηΩ 50sf) 長長度 初期 160°C 180°C jum xlOOOh xlOOOh 15(0) 0.85 2.56 4.15 83(0) 0.89 20以上 20以上 形成有銀-錫合金岸夕士 e之本每明例8,比未形成銀-錫< 金層之比較例4更可抑制錫晶鬚之成長。 入八:耐熱性方面’在未形成做為-般回流鏡錫… ^ 中在長時間加熱試驗之情形中,確t ’又’:之、4膜化,而使電性接觸電阻明顯增加。另一〕 門力有銀—錫合金層之本發明例δ中,即使進行長日: 間加熱式驗,7fR Af r-th -ί-τ> l- 認在使㈣觸€阻大幅增加,而石 _ 、.又錫θ,寻化之情形亦可明確地改善長期耐埶性。 (實施例4) ,、人做為利1 Cu/Sn之2層電鍵之實施例,以做為@ 320516 26 200923142 ‘強度端子材料之代表之含 0 5¾、以.ηH Ζη: 1. 〇%、Sik . ..^之板厚0.25 mm之銅合金拓為萁从 , 鑛銅層、鑛錫層,並進行回、、,卢 $板為基材,形成 鑛銀層,並於靴之溫水中浸潰IG秒鐘,使其/成上= 二=:=ΤΛ。比較例中則製作不形成銀,合金屠 ❹此桃驗片評估其抗晶鬚生成 日日颈之孑估係利用如實施例1至3之外邱廐. 之評估係各在戰,下保㈣。: 藉由電子顯微鏡(FE-SEM)觀察本發明例 試驗片之表面及剖面。 ]9之加熱4驗後之 本發明例9至η與比較例5中之電鑛層之 抗晶鬚生錄及耐熱性之評估結果如表4所示。 - [表 4] ’ -—--- 基材 厚度 鍍鎳層 μπί 鏟錫 層μπί 回 流 處 珲 錢 μ® 晶鬚最長 長度μιη 電性接觸電阻(πιΩ 50gf) mm ^77 Jt Η 160°C 180°C 本發明例 0.25 *—-:-- 0.3 1.1 ———_ -----— --~~-__„ xl20h xl20h 本發明例 + 0.01 —---- 7(0) 0. 77 1.21 1.31 10 0.25 0.3 1.1 + 〇. 06 5(0) —'-- Π 71 1.14 1.16 本發明例 ------ 0.25 0 95 0.3 0 3 — ----—-- vJ. 1 1 1.1 1 1 + 4- 〇. 02 10(0) 0. 76 1.15 1.13 ------ 丄《丄 _U9 13.11 18.28Copper 煳 mirror layer 4 PG example 5 2 0.80.8 reflow treatment + + no layer 艮 plating A 04 whisker most electrical contact resistance (ιηΩ 50sf) long length initial 160 ° C 180 ° C jum xlOOOOh xlOOOh 15 (0) 0.85 2.56 4.15 83(0) 0.89 20 or more and 20 or more are formed with silver-tin alloy, which is the case of 8th, which is more effective than the comparative example 4 which does not form silver-tin < gold layer. growing up. Into the eight: heat resistance aspect in the case of the unreformed reflow mirror tin... ^ In the case of a long-time heating test, it is confirmed that the film is electrically formed, and the electrical contact resistance is significantly increased. In the case of the invention δ in which the door force has a silver-tin alloy layer, even if the long-day:inter-heat test is performed, 7fR Af r-th -ί-τ> l- recognizes that the (four) touch resistance is greatly increased, The situation of stone _, . and tin θ, can also be used to improve long-term suffocation. (Example 4), an example of a two-layer key of a person who is a 1 Cu/Sn, as @320516 26 200923142 'The representative of the strength terminal material contains 0 53⁄4, .ηH Ζη: 1. 〇% , Sik . . . ^ The thickness of 0.25 mm copper alloy is extended from the copper layer, the mineral tin layer, and the back,,, and the $ plate as the substrate, forming a layer of gold and silver, and the temperature of the boots Immerse in water for IG seconds, making it /=====ΤΛ. In the comparative example, silver is not formed, and the alloy is slaughtered. The evaluation of the anti-whisker generation day and neck is evaluated by using the evaluation system of the above-mentioned examples 1 to 3, and the evaluation system is in the battle. (4). : The surface and cross section of the test piece of the present invention were observed by an electron microscope (FE-SEM). The results of the evaluation of the anti-crystal whisker and heat resistance of the electric ore layers in the inventive examples 9 to η and the comparative example 5 are shown in Table 4. - [Table 4] '----- Substrate thickness Nickel plating μπί Shovel layer μπί Reflow at the point μ® Whisker longest length μιη Electrical contact resistance (πιΩ 50gf) mm ^77 Jt Η 160°C 180 °C Inventive Example 0.25 *--:-- 0.3 1.1 ———_ ------ --~~-__„ xl20h xl20h Example of the invention + 0.01 —---- 7(0) 0. 77 1.21 1.31 10 0.25 0.3 1.1 + 〇. 06 5(0) —'-- Π 71 1.14 1.16 Example of the invention ------ 0.25 0 95 0.3 0 3 — ----—-- vJ. 1 1 1.1 1 1 + 4- 〇. 02 10(0) 0. 76 1.15 1.13 ------ 丄 "丄_U9 13.11 18.28

’比未形成銀_ 同時確認對於 形成有銀-錫合金層之本發明例9至U 踢合金層之比較例5更可抑制晶鬚之成長。 320516 27 200923142 ‘ Cu/Sn之2層回流鍍錫’亦可抑制錫晶鬚之產生。 旗錫方面#未形成做為-般之2層回流鍍錫之 =-:二:層之比較例5中’由於銅從材料逐漸擴散,而使 吏在I20小訏之短期間加熱試驗之情 形’亦確遇電性接觸電阻明顯 二、s + g + a,4上升,而導電性明顯惡化。 另:方面,在形成有銀_錫合金層之本發明例中, 即使進行相同之加埶續鹼 …忒釦,亦無法確認有電性接觸電阻大 幅上升,因此確認耐熱性明確地改善。 圖所示為在本發明9中㈣之試樣在繼、12〇 小3守下加熱試驗後之表面,第 昭Τ田弟卟圖為其剖面。由該表面之 -ρ 〃木之銀 ''錫合金微粒因在高溫 金^ i _之塊,亚均勻分散於銅-錫合 主尽(表面。由剖面之昭片可左 * Γτι ς找 及…、月了確涊,錫經由銅-錫合金化而 由Cu6Sn5變化為Cu3Sn,最後 不受鈉姐人八 取便70王姣為CU3Sn,但Ag3Sn塊 又銅-錫合金化進行影響, 在。吐A 0 , 直在表面層以島狀存 亦安定1之耐氧化性比銅—錫合金強,因此高溫下 使在手期 材料表面導電性之降低有重要之功用。即 ^ =下’錫成分全變為Sn〇2/Cu3Sn,因表面存在 通路Γ/粒子,在與對侧輸 用’因此可安定地進行電性接觸。 、焉施例5) 做為利用Cu/Sn之2層電鍍之音#/ , 端子枒— 又之貫轭例,以做為高導電 材#之代表之含有Mg: 〇. 7%、p 之銅合金板為基材,再職銅層:精之= 320516 200923142 處理後’再於鍍錫層上形成鍛銀層,並於, -潰10秒鐘’使其形成銀-錫合金層而製作試驗:溫水中浸 .凋查鑛錫層膜厚之影響,其中設定為薄之鍍❹。又為了 比較例6中製作不形成銀一錫合:㈣片。 ^中增加形成於錢锡層上之鑛銀層之 ^片。比較 金層上殘留鍍銀層之試驗片。 衣成銀-錫合 使用此等試驗^估其抗晶鬚 方法如實施例4。並纟χί?η 及耐熱性。評估 構造。 、,工由咖測定評估此等試驗片之結晶 於曰=月例12至U與比較例6、7電鍍層之構成;5 抗曰曰讀生敍及㈣性之評估結果 ^成及其 之結果如第1〇圖所 5所不。XRD測試 [表5] 厚度 ------- 錢銅層 咖 μιπ 本發明例 0.6 μτ[ 本發明例 3 0.6 0.3 本發明例 4 0.6 0.3 jjj ΎΓ' ΎΓ' "tbSrT" ΤΓ' 鐘錫層 μιπ 回 流 處理 鎮銀層 μιπ 0.04'Compared to the fact that silver was not formed _ at the same time, it was confirmed that the growth of whiskers was suppressed even in Comparative Example 5 of the inventive Example 9 to U-kick alloy layer in which the silver-tin alloy layer was formed. 320516 27 200923142 ‘Two layers of Cu/Sn reflow tin plating' also inhibits the generation of tin whiskers. Flag tin aspect #not formed as a general two-layer reflow tin plating =-: two: layer comparison example 5 'due to the fact that copper is gradually diffused from the material, and the crucible is heated during the short period of I20 small crucible 'It is also true that the electrical contact resistance is obviously two, s + g + a, 4 rises, and the conductivity is significantly deteriorated. On the other hand, in the example of the present invention in which the silver-tin alloy layer was formed, it was not confirmed that the electrical contact resistance was greatly increased even when the same addition of the alkali metal was performed, and therefore it was confirmed that the heat resistance was remarkably improved. The figure shows the surface of the sample of the present invention (4) after the heating test of the 12 〇 3 shoud, and the section of the Τ Τ Τ 。 为其. From the surface of - ρ 之 之 ' ' ' ' 锡 锡 锡 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 因 ' ' ' ' ' ' ' ' ' ' ..., the moon is sure, tin is changed from Cu6Sn5 to Cu3Sn through copper-tin alloying, and finally it is not affected by sodium sister eight. 70 Wang Hao is CU3Sn, but Ag3Sn block is also affected by copper-tin alloying. Spit A 0, which is directly in the surface layer and is stable in the island. The oxidation resistance is stronger than that of the copper-tin alloy. Therefore, it is important to reduce the conductivity of the surface of the material during the high temperature. That is, ^ = lower 'tin The composition is completely changed to Sn〇2/Cu3Sn, and there is a channel Γ/particle on the surface, and it can be safely electrically contacted with the opposite side. Therefore, Example 5) is used as a two-layer plating using Cu/Sn. The sound #/ , terminal 桠 - another yoke example, as a representative of the high conductive material # contains Mg: 〇. 7%, p of the copper alloy plate as the substrate, re-service copper layer: fine = 320516 200923142 After the treatment, 'the forged silver layer was formed on the tin-plated layer, and then -crushed for 10 seconds' to form a silver-tin alloy layer to make a test: dip in warm water. The effects of the tin-thickness film thickness were examined, and the thin ruthenium was set. Further, in the case of Comparative Example 6, no silver-tin-yield was formed: (4) sheets. ^ Add a slice of the mineral layer formed on the tin layer. The test piece of the residual silver plating layer on the gold layer was compared. Silver-tin composites were evaluated using these tests to determine their anti-spinning method as in Example 4. And 纟χί?η and heat resistance. Evaluation structure. The crystallization of these test pieces was evaluated by the coffee maker in the composition of 曰=months 12 to U and the plating layers of the comparative examples 6 and 7; 5 the results of the evaluation of the anti-study and the evaluation of the (4) nature and the results thereof As shown in Figure 1 of Figure 1. XRD test [Table 5] Thickness ------- Money copper layer cell μιπ Inventive example 0.6 μτ [Inventive Example 3 0.6 0.3 Inventive Example 4 0.6 0.3 jjj ΎΓ' ΎΓ' "tbSrT" ΤΓ' Zhong Xi Layer μιπ reflux treatment of silver layer μιπ 0.04

19(0)0.3 Tc〇y pm wmM. (初期 160°C xl20h '- 180°C xl20h 0. 77 1.37 ----- 4.80 0.78 1.20 3.79 0. 78 1.59 --— - 5.98 0. 79 18.49 20以上 |jU5 20以上 20以上 中’比未形成::合金層之本發明例12至14及比較例 成銀,合金層之比較例6更可抑制 晶鬚之成 320516 29 200923142 -長。同時確認,鍍錫層薄之情形,更可抑制錫 • 在耐熱性方面,在未形成銀-錫合金層之比較例β 2 ::::錫層在短期間加熱試驗後,完全變為銅_錫合金: •惡化==電:遠較初期上升,而確認其導電性明顯 丨一方面’在形成有銀-錫合金層之本發明例9至 ,即使鑛錫層同樣完全變為銅_錫合金,仍I法 J = 上升°亦即本發明即使在使錄錫層: 化之可同時改善其_性並 f 10圖所示為將本發明们2幻4及比較例7中製 ,定聲鳩由x射線繞射進行分析之結果。為了 Γ/1: 晶構造,而將縱軸強度之刻度配合- =銀八Λ波^度調整。在本發明例12至14中均未發 二見:銀金屬波峰’因此可知以Ag3sn金屬間化合物之形式 二r gp 锡金屬'之擴散速度及反應性高,因此 在其電鍵步驟完成之時,已完全變為銀—錫合金。另一 ’在比較例7中由於鑛银層很厚,在一般條件下益法 疋王銀-錫合金化,而確認錢錫層表面殘留純銀金屬層。 如表5所不’在增加鍍銀層厚度之比較例7中,雖 生锡晶鬚之效果’但在耐熱試驗中表面之銀硫化或氧 化,而確認電性接觸電阻變差。 (實施例6) =為利用單層鍵錫層之實施例,以做為高強度端子材 料之代表之含有Ni.2 0g/、7 ι 之板厚。.⑽之銅合 口 i板為基材,形成鍍錫層,並進行 320516 200923142 •回流處理後,再於鍍錫層上形成 Ψ ^ ^ 1 π ίί ^ 现锻银層’並於4(TC之溫水 -中反潰秒鐘,使其形成銀一錫入 赖例中則制从丁 丄 σ 層而製作試驗片。比 孕乂例中則製作不形成銀一錫合 y a - a. 層之試驗片。使用此等試驗 片孑估其k晶鬚生成性及耐埶 5。 … 其/別試方法如實施例4、 本發明例15與比較例8中 η±^η^ ^ 甲之電錢層之構成及其抗晶 [表6] 〆、19(0)0.3 Tc〇y pm wmM. (Initial 160°C xl20h '- 180°C xl20h 0. 77 1.37 ----- 4.80 0.78 1.20 3.79 0. 78 1.59 --- - 5.98 0. 79 18.49 20 In the above |jU5 20 or more and 20 or more, the ratios of the inventive examples 12 to 14 and the comparative examples are silver, and the alloy layer 6 can suppress the whisker formation 320516 29 200923142 - long. In the case where the tin plating layer is thin, it is possible to suppress tin. In the heat resistance, the comparative example β 2 :::: tin layer in which the silver-tin alloy layer is not formed is completely changed to copper_tin after a short-time heating test. Alloy: • Deterioration ==Electrification: farther than the initial rise, and confirmed that its conductivity is significant on the one hand, in the case of the invention of the present invention in which the silver-tin alloy layer is formed, even if the tin-plated layer is completely changed to copper-tin alloy , still I method J = rise °, that is, the present invention can improve the _ sex even when the tin layer is etched, and the f 10 figure shows that the invention is made in 2 phantom 4 and comparative example 7, fixed sound The result of analysis by x-ray diffraction. For the Γ/1: crystal structure, the scale of the vertical axis intensity is matched with -= silver gossip wave degree adjustment. In the present invention examples 12 to 1 Nothing is observed in 4: silver metal peaks. Therefore, it can be seen that the diffusion rate and reactivity of the two r gp tin metal in the form of Ag3sn intermetallic compound are high, so when the key step is completed, it has completely changed into silver-tin. Alloy. Another 'in Comparative Example 7 because the mineral silver layer is very thick, under normal conditions, Yifa Wang silver-tin alloying, and confirmed that the surface of the tin tin layer remains pure silver metal layer. As shown in Table 5 In Comparative Example 7 in which the thickness of the silver plating layer was the effect of the tin whisker, the silver of the surface was vulcanized or oxidized in the heat resistance test, and it was confirmed that the electrical contact resistance was deteriorated. (Example 6) = Using a single layer bond The tin layer embodiment is made of a high-strength terminal material and contains a sheet thickness of Ni.2 0g/, 7 ι. (10) The copper joint i board is used as a substrate to form a tin-plated layer, and is carried out 320516 200923142 • After the reflow treatment, Ψ ^ ^ 1 π ίί ^ is now formed on the tin-plated layer, and the silver layer is forged and then collapsed in 4 (the warm water of TC) to form silver-tin in the case of A test piece was prepared from the 丄 丄 σ layer. In the case of the pregnancy, no silver-tin ya-a was formed. A test piece of the layer. The test piece was used to evaluate its k whisker formation property and resistance to 埶. 5 / The test method was as in Example 4, Example 15 of the present invention and Comparative Example 8 η±^η^ ^ A The composition of the electric money layer and its resistance to crystal [Table 6]

,貞生成性及耐熱性之評估結果如表6所示。 f 金以:8=層之本發明例15’比未形成銀-錫合 金層之比較例8更可抑制其晶鬚之成長。 在形成有銀-錫合金層之本發 後,無法確認有電性接觸電阻大幅上升n =熱^驗 錫合金層之比較例",在加熱試驗後,由於4 之銅擴政,而確認電性接觸電阻明顯上升。 土 (實施例7) 使用微小硬度計(島津製:勝w 低 重測定本發明例1至15、比較例!至8之試驗片 確,各電鑛試樣之平均表面硬度分^表= ,'心狀貫施例之形成有銀-錫合金層之本發明例^ 320516 31 200923142 • 15中約為70 Hv,在来形占你姐入八a 中約為4〇 Μ。 $成銀-錫η層之比較例!至8 -人物^占確5忍本發明中錢錫層表面由硬Ag3Sn金屬間化 :4成之銀-錫合金層,具有錢錫層表面硬化之效 二由於此南硬度之銀,合金層會壓入鐵錫層之表面,因 此抑制錫晶鬚產生及点、π . A 、 成長。同時,以本發明之形成有銀一 錫δ金層之鑛錫材料為端子 , 之^ _^甘4勹而千材之丨月形,由於具有表面硬化 可使其插拔阻力變小,因此有改善Μ合作業性 (實施例8 ) ^人’如則述之第2實施樣態中所記載 圖所示,在將基材加工成零件之預定形狀後,再進: 全= 不對鑛锡層施予回流處理即形成銀-錫合 i;:fT確認本發明之有效性所進行之確 為導線架材之代表之含有mZn:0.m、 P. 0. li之板厚0.125 _之銅合金為其 鐘錫層後,再在該鍍錫層上材’形歧銅層、 m心 形成鐘銀層,並於4〇t之溫水 广二 其形成银,合金層而製作試驗片。比 較例”製作不形成銀,合金層之試驗片。 j中鐘錫層之厚度,為了使晶鬚產生之差異更明顯, 而设疋為已知不進行回流處理, 範圍(2至4 μπ〇内之2 β 曰U產生會取激烈之膜厚 之比較例10,在鍍錫芦上:成:為銀-錫粒子為分散狀態 踢層场切銀層後,再以將錢锡層炫 320516 32 200923142 ,之溫度⑽t χ8秒鐘)進行回流處細 用此等試驗片評估其抗晶鬚生成性及_性成4片。使 晶#貞之評估法係,為了調查電鍍層之 I,以自然放置法放置6個月 °應力之衫 察。耐熱評估方法如·^、+、夕+ 、仃電子顯微鏡觀 _下加熱叫時之試驗法。同時藉由== :=^之表面及剖面、及比較例= 抗曰鬚生成::至18與比較例9、10之電鍍層之構成及 果如表7所示。觀察本發 之-果如第= 果如第11A圖所示,觀察剖面 广2:: 圖所示,觀察比較例1〇之剖面之結果如第 之、,-口果如弟13Α圖、第13Β圖所示,觀察比較例9 二置7;個月後之表面之結果如第l3c圖、帛1汕圖所示:、、 基材 厚度 咖 鐘銅層 鍛錫層 ------ Μ:ΜΜ 晶鬚最 太膝日日 μΐη μπί μπί 長長度 μπί 初期 160°C x12〇h 180°C Of\L· 例6 0.125 0.3 2.6 0.03 12(0) —〜— 0.43 0.72 χΐό〇η 0.75 伞货明 例7 士名义ΡΡΪ 0.125 0.3 2.6 0.05 (0) 0.41 0.66 -—__ 0. 59 个嘴明 例8 比較例9 0.125 0.125 0.3 0 3 2.6 2 6 0.01 (0) 〇. 46 ---- 0.77 0.88 比較ST 10 —---- 0.125 0.3 2.6 0.09 84(68) 26(0) 〇. 56 0.49 r~X70~~ 9.47 |T28~ ~-- 13.12 ----1 320516 33 200923142 如第11A圖、第11β圖所示’可確認在由粗大錫結晶 =所構成之鐘錫層之表面均勾包覆有銀—錫微粒。特別: 日士了 =之銀_錫合金層,經過丨個月以上再觀察其剖面 二二#生部分凝聚及擴散至鑛錫層内部之擴散現象, +性及物理性均安定。_,確認在室溫下亦會發生 銅及錫擴散’而部分形成銅-錫金屬間化合物。 做為比較’第12圖所示為在已往之鑛銀後進行回谅 ::之比較例1〇之剖面之照片。由其可知,在鍍銀後進: 回j處理之情形’原先形成在鐘銀層表面之銀—錫粒子,由 二间’皿而促進其凝聚,m朝鍍錫層内《深度方向浐 散,而在鍍錫層表面幾乎無銀—錫粒子存在。 κ 由电鐘層内部應力引起晶鬚發生之狀況之例子,第 13Α圖、帛13β圖所示為將本發明例16之試樣自然放置 狀恶’第13C圖、* 13D圖所示為比較例9 认自然放置6個月後表面之狀態。-般已知,未回流 之膜厚2至4 μιη之鍍錫層,由於電鍍層之内部應力,= 使僅經過2至3曰亦會產生錫晶鬚。因此,在鍍錫層之表 面未形成銀-錫合金層之比較例9之情形,確認經過:個; 後曰自然產生大置之針狀锡晶鬚,大幅成長至最長為約Μ 叩。相對地,錢錫層之表面形成有銀,合金層之本發 :例16之情形,即使經過6個月之長期間後,其表面之狀 、亦如電鑛後之初期狀態’幾乎無法確認有錫晶鬚產生, 而確認其具有優良之抗晶鬚生成性。 表7所示為本發明例16至18及比較例9、1〇之抗晶 320516 34 200923142 須生成性及耐熱性之評估結果。 欲入八鍍錫層之表面形成有銀-錫合金層之本發明例16至1δ, / 曰热敦置6個月後,抬益 法球s忍有錫晶鬚產生,而確認且有 ~ ”有抑制鍚晶鬚產生之效果。 在耐熱性方面,鐘錫厗车 ^ , 殿蜴層之表面形成有銀-錫合金層之 本裔明例16至18,在加敎試驗接的 IK s + 均無法確認其電性接觸 电阻上升。另一方面,在夫报孑 隹禾形成銀—錫合金層之比較例9 中,在加熱試驗後確認電性接觸電阻大幅上升。 2銀後施予回流處理之比較例1G中,雖然由於已將電錄之 應力釋放而錫晶鬚不會自然產生,但因全體經回流處理, 故促進其銅-錫合金化,而確認加熱試驗後之電性接觸電阻 上升(導電性之劣化)會提高。 (實施例9) 做為利用Ni/Cu/Sn之3層電鐘之實施例,以做為導 線架材料之代表之含有Fe: 2·4%、ζ.η: G i3%、p·· 〇 ^之 板厚0.15随之銅合金板為基材,形成鍍鎳層、鍍鋼層、 鍍錫層、鍍銀層,並於4(rc之溫水中浸潰1〇秒鐘,使宜 形成銀—錫合金層而製作試驗片。比較例11中製作不形成 銀-錫合金層之試驗片。使用此等試驗片評估其抗晶鬚生成 及ί熱性。耐熱砰估方法如實施例1至3,抗晶鬚生 性之評估方法如實施例7。 ^在鍍錫層表面形成有銀-錫合金層之本發明例〗9及比 叛例11之電鍍層之構成及其抗晶鬚生成性及耐熱性之評 估結果如表8所示。 320516 35 200923142 [表8] T--- 丨丨— 基材厚 1------ 鑛錄層 鍍銅層|鐘錫層 鍍銀層 1晶鬚最 長長度 μιη ——-- 觸電阻 ΟπΩ 50gf) 本發明 ^又腿 μ® ~----- μιη μηι m 初期 160°C vi onvi 180°C 例19 比較例 0.15 0.3 0.3 2.6 0.03 (0) 〇. 45 Αΐώυη 1.23 xiZUn 1.76 11 0.15 0.3 0.3 - 2.6 — (76) ------— _ 0.61 6. 67 8.13 室7放晉二 錫合金層之本發明例19,在 恤 狀恶下無法確認有錫晶鬚產生。另在 未形成銀-錫合金層之比較 乂 ^ 面在 態下其錫㈣亦會變大。U1巾即使在室溫放置之狀 士在形成有銀-錫合金層之本發明例19中,即 小日卞加熱試驗之情形,亦盔法 〇〇 、走確5忍有電性接觸電阻大幅上 升。另-方面’在未形成銀—錫合金層之比較例,加 熱试驗後可發現電性接觸電阻大幅上升。 (實施例10) r 做為利用Cu/Sn之2層電錢之實施以 材料之代表之含有Cr:0.w'Sn: "%、Zn::::= 0. 127 mm之銅合全板;y ^之板厗 銀層,並於4(TC之溫水中浸潰1〇并妒你甘鍍锡層、鍍 八恳制 、^/鐘,使其形成银-錫人 作試驗片。比較例12中製作不形 之试驗片。使用此等試驗片評估1 金層 耐埶性及抗日,在点、杬日日須生成性及耐熱性。 U及抗Βθ須生成性之評估方法如實施例7。 形成銀-錫合金層之本發明例2()及比較例丨2之電鑛 320516 36 200923142 層之構成及其抗晶鬚生成性及耐熱性之評估結果如表g所 7JT 0 [表9 ] 基材厚 鋼層 鐵锡層 锻 晶鬚最長 長度μπι 觸電阻(πιΩ 50gf) 太旅Μ 度刪 Mm μπι μπί 初期 160°C xl20h 180°C x120h 个设% 例20 0.15 0.5 2.6 0. 03 (〇) 0. 52 1.11 1.54 厂。权1夕!J 12 0.15 0.5 2.6 - (41) 0.65 4.44 6.59 —在鍍錫層表面形成有銀-錫合金層之本發明例20中, 在至咖放置之狀態下無法確認有錫晶鬚產生。另一方面, 士形成銀錫合金層之比較例i 2中,即使在室溫放置之 狀怨下其錫晶鬚亦會變大。 士 成有銀錫合金層之本發明例2 0中,即使在12 0 ^ τ加L之情形’亦無法確認有電性接觸電阻大幅上 方面在未形成銀-錫合金層之比較例12中,加 熱試驗後可發現電性接觸電阻大幅上升。 (實施例11) 為利用Cu/Sn之2層電鍍之實施例,以做為導線架 =之代表之含有Ni: 42%之板厚〇.127 _之鐵合金之板 水:,形成鍍銅層、鍍錫層、鍍銀層,並於40。〇之溫 ^ /又/貝10秒鐘,使其形成銀-錫合金層而製作試驗片。 •H' :例中製作不形成銀-錫合金層之試驗片。使用此等 …片4估其抗晶鬚生成性及耐熱性。财熱性及抗晶鬚生 37 320516 200923142 成性之§平估方法如實施例7。 本發明例21及比較例13之電 生成性及耐熱性之評估結果如表 構成及其抗晶鬚 [表10] 、戶斤示。 電性接觸電阻 初期 160°C x120h 180°C xl20h 1.55 ~ΤΓ29~ 1.89 20以上 基材厚 度ram 鑛銅 層μιη 鑛锡 層μιη 鐵銀 層Mm 本發明例 21 0.25 0.5 2.6 〇. 03 比較例13 h 0.25 0.5 2.6 ---- 晶鬚最 長長度. m 山在鑛錫層之表面未形成銀—錫合金層之比較例^中 由於鐵合金基材與料層存在大膨㈣數,而確認; 針狀錫晶鬚成長。相對地,在錄錫層i ° — 昆, 日衣1成有銀-錫合/ 層之本發明例21中,即使經過6個月,介叮+ ' ^ ^ ^ a ^ 固月’亦可確認小的突^ 狀之錫晶鬚,但確認已提高其抗晶鬚生成性。 在耐熱性方面,在鐘錫層之表面形成有銀 之本發明例21巾’加熱試驗後,亦無法確認有電性接觸、 阻大幅上升。另一方面,在未形成銀_錫合金層之比較合 U中,加熱試驗後確認電性接觸電阻大幅上升。 (實施例12) 以下說明評估關於本發明之鍍錫導電材料之銲、、甚 潤度結果。 銲料濕潤度之評估’係依JIS-C_0050使用動態濕潤 性測定機(RHESCACo.,LTD.製造· WET-6000)並依濕潤平 320516 38 200923142 衡測試法(wetting balance test)進行評估。具體古之, 浸潰於松香助銲劑中2秒鐘之後,在預定溫度之鲜料槽 中,以速度10 mm/秒,浸潰至深度2 mm 10秒鐘,再測^ 最大濕潤應力及濕潤應力為0時之時間(零點交又時間 • zero crossing time)。此零點交叉時間越短其銲料濕潤度 越佳。 先假设利用現行之Sn-Ph糸.错斗;4·夕/法Tt, “糸紅科之情形,說明使用 ^觸共晶銲料(共晶點纖),將銲料槽溫度設定為 身又砰估溫度之23(TC進行評估之結果。… 2 省t前述之第1實施㈣中之鎳底鍍之Cu/Su cu-Ni-Si人全夕/厂做為南強度端子材料之代表之 Sl 5金之板厚0.25_之銅合金柘 子材料之代矣夕r u " 及做為鬲•電韓 刊丁卞心代表之Cu-Mg-p合金之柘尸〇 “ 為基材,形成轳钿思ώ 、之板厚0.4〇 mm之銅合金扬 铲錫声上π ,又,,-曰鍍錫層,並進行回流處理後,再於 鍍錫層上形成同樣膜厚〇 <里後再於 。水十浸潰10秒鐘,❹鍵銀層’並於4(TC之溫 較例中則製作 /、/ (錫合金層製作試驗片。比 切成寬度10 nun之長條, 曰之试釦片。將此等試驗片 零點交又時間及最大濕 5條浸潰於銲料槽中,測定 結果如表11所示。" ,再计异其平均值。其測定 320516 39 200923142 [表 11] 材質 厚度 (mm) 本發明例 22 Cu-Ni-Si 0.25 本發明例 23 Cii-Mg-P 0.4 比較例4 Cu-Ni-Si 0.25 比較例5 Cu-Mg-P 0.4 •^麵J層 μπι 錫層 μιη 1.2 0.3The evaluation results of the enthalpy and heat resistance are shown in Table 6. f Gold: 8 = layer of the invention Example 15' is more resistant to the growth of whiskers than Comparative Example 8 in which the silver-tin alloy layer is not formed. After the present invention in which the silver-tin alloy layer was formed, it was not confirmed that the electrical contact resistance was greatly increased n = the comparative example of the hot-working tin alloy layer, and after the heating test, it was confirmed by the copper expansion of 4 The electrical contact resistance increases significantly. Soil (Example 7) The average surface hardness of each electric ore sample was determined using a microhardness tester (Shimadzu: win w low weight measurement of the test examples 1 to 15 and comparative examples! to 8). 'Inventive example of the formation of a silver-tin alloy layer formed by a heart-shaped embodiment ^ 320516 31 200923142 • 15 is about 70 Hv, which is about 4 在 in the form of your sister into the eighth a. $成银- Comparative example of tin η layer! To 8 - character ^ 占真5 endure The surface of the tin tin layer is composed of hard Ag3Sn intermetallicization: 40% silver-tin alloy layer, with the effect of surface hardening of the tin tin layer In the south hardness silver, the alloy layer is pressed into the surface of the iron-tin layer, thereby suppressing the generation of tin whiskers and the growth of dots, π. A, and at the same time, the tin-forming material of the present invention having the silver-tin δ gold layer is The terminal, the ^ _ ^ Gan 4勹 and the shape of the moon, due to the surface hardening can make the insertion resistance less, so there is improvement in the cooperation (Example 8) 2 As shown in the figure shown in the figure, after the substrate is processed into the predetermined shape of the part, it is re-entered: All = Silver is not formed by applying reflow treatment to the tin-plated layer - I::fT confirms that the effectiveness of the present invention is indeed represented by the lead frame material, and the copper alloy containing mZn:0.m, P.0.li has a thickness of 0.125 _ On the tin-plated layer, a 'shaped copper layer, a m-heart is formed into a silver layer, and a silver and an alloy layer are formed in a warm water of 4 〇t to produce a test piece. The comparative example" does not form silver, and the alloy layer is formed. Test piece. The thickness of the tin layer in j, in order to make the difference in whisker more obvious, and set the 疋 is known not to carry out reflow treatment, the range (2 to 4 μπ within 2 β 曰U will take intense Comparative Example 10 of film thickness, on tin-plated reed: into: silver-tin particles in a dispersed state, after the silver layer was cut, and then the temperature of the money tin layer 320516 32 200923142 was (10) t χ 8 seconds) At the reflow point, these test pieces were used to evaluate the resistance to whisker formation and _ sex into 4 pieces. The evaluation method of the crystal 贞 ,, in order to investigate the I of the plating layer, placed in a natural placement method for 6 months. The heat resistance evaluation method is as follows: ^, +, 夕+, 仃 electron microscopic view _ under the heating test method. At the same time by == :=^ Surface and cross-section, and comparative examples = anti-must formation:: to 18 and the composition of the electroplated layers of Comparative Examples 9 and 10 and the results are shown in Table 7. Observe the results of the present invention, as shown in Figure 11A. Show, the observation section is wide 2:: As shown in the figure, the results of the section of Comparative Example 1 are observed as the first, - the mouth is as shown in the 13th and 13th, and the comparative example 9 is set to 2; The result of the surface is as shown in the l3c and 帛1汕:, the thickness of the substrate, the copper layer, the wrought tin layer, ------: ΜΜ, the whisker, the most knee, the day, the μΐ, the μπί μπί, the long length Ππί Initial 160°C x12〇h 180°C Of\L· Example 6 0.125 0.3 2.6 0.03 12(0) —~— 0.43 0.72 χΐό〇η 0.75 Umbrella goods example 7 士 nominal ΡΡΪ 0.125 0.3 2.6 0.05 (0) 0.41 0.66 -___ 0. 59 mouths Example 8 Comparative Example 9 0.125 0.125 0.3 0 3 2.6 2 6 0.01 (0) 〇. 46 ---- 0.77 0.88 Compare ST 10 —---- 0.125 0.3 2.6 0.09 84( 68) 26(0) 〇. 56 0.49 r~X70~~ 9.47 |T28~ ~-- 13.12 ----1 320516 33 200923142 As shown in Figure 11A and Figure 11β, it can be confirmed that it is crystallized from coarse tin = The surface of the tin layer formed Coated with silver - tin particles. Special: Nissan = silver _ tin alloy layer, after more than two months and then observe its profile 22nd part of the raw part of the condensation and diffusion to the inside of the tin layer diffusion phenomenon, + sexual and physical stability. _, it was confirmed that copper and tin diffusion occurred at room temperature, and a copper-tin intermetallic compound was partially formed. As a comparison, Figure 12 shows a photograph of the section of Comparative Example 1 in the case of the previous mine. It can be seen that after the silver plating is carried out: the case of returning to j is the silver-tin particles originally formed on the surface of the silver layer, which is promoted by the two 'dishes, and the m is scattered toward the tinned layer. On the surface of the tin plating layer, almost no silver-tin particles exist. κ An example of the situation in which whiskers are generated by the internal stress of the electric clock layer. The 13th and 帛13β diagrams show the natural placement of the sample of the inventive example 16 as shown in Fig. 13C and *13D. Example 9 The state of the surface after 6 months of natural placement. It is generally known that a tin plating layer having a film thickness of 2 to 4 μm which is not reflowed, due to the internal stress of the plating layer, causes tin whiskers to be generated only after 2 to 3 Å. Therefore, in the case of Comparative Example 9 in which the silver-tin alloy layer was not formed on the surface of the tin-plated layer, it was confirmed that the film was formed by a large amount of needle-shaped tin whiskers, and the growth was long enough to be about Μ 叩. In contrast, the surface of the money tin layer is formed with silver, and the alloy layer is in the form of the case: in the case of Example 16, even after a period of 6 months, the surface condition, such as the initial state after the electric ore, is almost impossible to confirm. Tin whiskers are produced, which are confirmed to have excellent whisker formation resistance. Table 7 shows the results of evaluation of the productivity and heat resistance of Examples 16 to 18 and Comparative Examples 9 and 1 of the present invention, which are resistant to crystal 320516 34 200923142. The inventive examples 16 to 1δ are formed on the surface of the eight tin-plated layer to form a silver-tin alloy layer, and after the heat is placed for 6 months, the lifted ball s bears the tin whisker generation, and it is confirmed that there is ~ "Inhibition of the effect of whisker whiskers. In terms of heat resistance, the tin-stained car ^, the surface of the temple layer formed with silver-tin alloy layer of the native example 16 to 18, the IK s + in the twist test On the other hand, in Comparative Example 9 in which a silver-tin alloy layer was formed in Fushun, it was confirmed that the electrical contact resistance was greatly increased after the heating test. In Comparative Example 1G, since the tin whiskers were not naturally generated due to the release of the stress of the electro-recording, since the entire reflow treatment was performed, the copper-tin alloying was promoted, and the electrical contact resistance after the heating test was confirmed. The rise (deterioration of conductivity) is improved. (Embodiment 9) As an example of a three-layer electric clock using Ni/Cu/Sn, as a representative of the lead frame material, Fe: 2.4%, ζ .η: G i3%, p·· 〇^ The thickness of the plate is 0.15, and the copper alloy plate is used as the substrate to form a nickel-plated layer and a plated steel. , tin plating layer, silver plating layer, and dipping in 4 (rc of warm water for 1 〇 second, so that a silver-tin alloy layer should be formed to prepare a test piece. In Comparative Example 11, no silver-tin alloy layer was formed. Test pieces. The test pieces were used to evaluate their whisker formation resistance and heat resistance. The heat resistance evaluation method was as in Examples 1 to 3, and the evaluation method of the whisker resistance was as in Example 7. ^ Silver was formed on the surface of the tin plating layer. - The results of the evaluation of the composition of the present invention and the composition of the electroplated layer of the repellent 11 and its resistance to whisker formation and heat resistance are shown in Table 8. 320516 35 200923142 [Table 8] T---丨丨 — Substrate thickness 1 ------ Mineral layer copper plating layer | Tin tin layer silver plating layer 1 whisker longest length μιη ——-- Contact resistance Ο π Ω 50gf) The invention ^ leg leg μ ~ ~ ---- μιη μηι m Initial 160°C vi onvi 180°C Example 19 Comparative Example 0.15 0.3 0.3 2.6 0.03 (0) 〇. 45 Αΐώυη 1.23 xiZUn 1.76 11 0.15 0.3 0.3 - 2.6 — (76) ----- -— _ 0.61 6. 67 8.13 In the case of the invention, in the case of the alloy 2, the tin-tin alloy layer of the invention was found to have no tin whisker in the form of a tummy, and no silver-tin was formed. The comparison of the layers 乂^ in the surface state, the tin (4) also becomes larger. The U1 towel is placed at room temperature in the case of the present invention in which the silver-tin alloy layer is formed, that is, the case of the small corona heating test. In addition, the electric contact resistance has risen sharply. In the comparative example where the silver-tin alloy layer is not formed, the electrical contact resistance can be found to rise sharply after the heating test. (Embodiment 10) r As a material for the use of Cu/Sn 2 layers of electricity, the material represented by Cr:0.w'Sn: "%, Zn::::= 0. 127 mm of copper Full plate; y ^ plate 厗 silver layer, and immersed in 4 (TC warm water 1 〇 and 甘 甘 甘 镀 、 、 、 镀 镀 、 、 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘 甘In the comparative example 12, an invisible test piece was prepared. Using these test pieces, the hardness resistance and the anti-day of the gold layer were evaluated, and the formation and heat resistance at the point and day of the day were evaluated. The method is as in Example 7. The composition of the inventive example 2 () and the comparative example 丨 2 of the present invention for forming a silver-tin alloy layer 320516 36 200923142 The composition of the layer and the evaluation results of the resistance to whisker formation and heat resistance are shown in Table g. 7JT 0 [Table 9] Substrate thick steel layer Iron tin layer Forged whiskers The longest length μπι Touch resistance (πιΩ 50gf) Too much degree Mm μπι μπί Initial 160°C xl20h 180°C x120h Set % Example 20 0.15 0.5 2.6 0. 03 (〇) 0. 52 1.11 1.54 Factory. Right 1 !! J 12 0.15 0.5 2.6 - (41) 0.65 4.44 6.59 - In the inventive example 20 in which a silver-tin alloy layer is formed on the surface of the tin plating layer, Placed in the coffee In the state of comparison, in the case of the silver-tin alloy layer, the tin whisker is enlarged even if it is placed at room temperature, and the tin whisker becomes large. In the case of the alloy layer of the invention of Example 20, even in the case of adding 120 τ to the case of L, it was not confirmed that the electrical contact resistance was large in the comparative example 12 in which the silver-tin alloy layer was not formed, and the heating test was possible. It was found that the electrical contact resistance was greatly increased. (Example 11) An example of electroplating using a two-layer plating of Cu/Sn, which is represented by a lead frame = Ni: 42% of a plate thickness 〇.127 _ of an iron alloy Plate water: A copper plating layer, a tin plating layer, a silver plating layer is formed, and a test piece is formed by forming a silver-tin alloy layer at a temperature of 40 ° / / / for 10 seconds. • H': In the example, a test piece which does not form a silver-tin alloy layer is produced. Using these sheets, it is estimated that it is resistant to whisker formation and heat resistance. The heat and resistance to whiskers 37 320516 200923142 § § estimation method as implemented Example 7. The evaluation results of the electroformability and heat resistance of Examples 21 and Comparative Example 13 of the present invention are as shown in the table and their anti-spinning agents [Table 10] Initial indication: Electrical contact resistance 160°C x120h 180°C xl20h 1.55 ~ΤΓ29~ 1.89 20 or more substrate thickness ram mineral copper layer μιη mineral tin layer μιη iron silver layer Mm invention example 21 0.25 0.5 2.6 〇. 03 Comparative Example 13 h 0.25 0.5 2.6 ---- The longest length of whiskers. m In the comparative example in which no silver-tin alloy layer was formed on the surface of the tin layer, there was a large expansion (four) number in the iron alloy substrate and the layer. Confirmation; Needle-shaped tin whiskers grow. In contrast, in the case 21 of the invention in which the tin layer i°-Kun, the Japanese coat has a silver-tin/layer, even after 6 months, the mediator + ' ^ ^ ^ a ^ Gu Yue ' can also It was confirmed that small tin whiskers were confirmed, but it was confirmed that the whisker formation resistance was improved. In terms of heat resistance, after the heating test of the invention No. 21 in which silver was formed on the surface of the tin-tin layer, electrical contact was not confirmed, and the resistance was greatly increased. On the other hand, in the comparative U in which the silver-tin alloy layer was not formed, it was confirmed that the electrical contact resistance was greatly increased after the heating test. (Embodiment 12) The following description evaluates the results of welding and the degree of durability of the tin-plated conductive material of the present invention. The evaluation of the wettability of the solder was carried out in accordance with JIS-C_0050 using a dynamic wetness measuring machine (manufactured by RHESCA Co., LTD., WET-6000) and evaluated according to Wetting Balance Test 320516 38 200923142. Specifically, after immersing in the rosin flux for 2 seconds, it is immersed to a depth of 2 mm for 10 seconds at a speed of 10 mm/sec in a fresh tank at a predetermined temperature, and then measured for maximum wetting stress and wetting. The time when the stress is 0 (zero crossing time). The shorter the zero crossing time, the better the solder wettability. Let's assume that the current Sn-Ph糸.what is used; 4·Xi/Fat Tt, “In the case of 糸红科, it is indicated that the solder bath temperature is set to be body and 使用 using eutectic solder (eutectic dot fiber) Estimate the temperature of 23 (the result of the evaluation of TC.... 2 province t the first implementation of the above (4) nickel plated Cu / Su cu-Ni-Si Ren Quan Xi / factory as the representative of the South strength terminal material Sl 5 gold plate thickness 0.25 _ copper alloy 柘 材料 ru ru ru ru ru ru 及 及 及 及 及 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 电 Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu Cu ώ, the plate thickness of 0.4〇mm copper alloy shovel tin π, and, - 曰 tin plating layer, and after reflow treatment, and then form the same film thickness on the tin plating layer lt; The water is immersed for 10 seconds, and the silver layer of the yttrium bond is made at 4 (the temperature of the TC is made in /, / (the test piece is made of tin alloy layer. The strip is cut to a width of 10 nun, the test of 曰The test piece was immersed in the solder bath with zero time and maximum wetness. The measurement results are shown in Table 11. ", and then the average value was measured. The measurement was 320516 39 200923142 [ Table 11] Material thickness (mm) Inventive Example 22 Cu-Ni-Si 0.25 Inventive Example 23 Cii-Mg-P 0.4 Comparative Example 4 Cu-Ni-Si 0.25 Comparative Example 5 Cu-Mg-P 0.4 • Surface J Layer μπι tin layer μιη 1.2 0.3

回流 處理 鍍簡 μπι 平均零 點交叉 時間sec 平均最 大濕潤 應力mN 0. 04 0.48 6. 60 0.04 0.69 6.29 _ ~ 0.89 6.28 uo 6.15 在鑛錫層表面形成右出 層之本發明例22、粒組成… 15比較,確認其平均零點交、又時口 =層之比較例“ 求之濕潤性之規袼值“π: =(溶點峨)粒子組成之銀趣層== ,,、錫(炫點232C)融合之時間變長之故。此與 —種之銀‘錫㈣料之反應類似。 錫之 相對於比較例1/2,而其平;錫層厚度 倍。相對地’鍍錫層厚度與比較例 金層之本發明例22,相對比較例14其 ^銀-錫合 :為“倍。由此可知,對於銲料_之影,又: 至層比鍍錫層膜厚小。 ’艮~錫合 (實施例13) 再假設利用環境負擔小之無錯鋅錫之情形說明,使用 320516 40 200923142 ,Sn-3% Αε^~〇 ς〇/ ^ .處進行評估°之11料(㈣2_、鲜料槽設定溫度為 了得到如Sn、pb 曰㈣,在使用無錯銲錫之情形,為 萨由活性助和/、日日之程度之濕潤性(零點交又時間),备 糊曹溫度::activatlng nux)進行前處理^ 提巧至250 c,在本實施例中,為 =前後之鋒料濕潤度,由預試驗之結果:、決】 -=進行。其他銲料濕潤度之評估條件同實施例12。 ^為利用前述第!實施形態之Ni/Cu/Sn之3層電鑛 之^^4〇以做為高導電端子材料之代表之CU—Mg~P合金 :“·40_之銅合金板為基材,形成鑛鎳層、錢銅層、 層,並進行回流處理後,再於鍍錫層上形成請 〇.〇δ _膜厚之鐘銀層,並於45t之溫水中浸潰1〇秒 二’使其形成銀-錫合金層而製作試驗片。銲料濕潤度之評 同實靡2。其之評估結果如表―所示。 —----- 比較例1 fi ------ 计 ϊ ϊ_ TT=? 暴构厚 度咖1 π λ 鍍鎳層μιη 鑛銅層μιη 鍍錫層 μπι 回流 處理 μιη 平均零點交叉 時間sec ^發明例 U. 4 0· 3 0.2 1.0 -------- —L__ —---- 3.95 24 — 太路日只仓!1 0.4 0.3 0.2 1.0 + 0. 01 3. 60 t 夕1J 0.4 —------- _ 0.3 0.2 1.0 + 0. 02 3.10 'aj 26 '^r-z--- BH -/sil 0.4 一· 0.3 0.2 1.0 + 0. 04 2.85 27 ~~ 太恭B日Α,ϊ 0.4 0.3 0.2 1.0 + 0.06 2. 88 0.4 0.3 0.2 1.0 + 0. 08 2.93 320516 41 200923142 由於無鉛銲錫之炫 其平均零點交又時間整體晶鮮料為高, 粒組成之銀-踢人全+ =…長,但表面形成有由銀-錫微 時間均比未包至27之平均零點交又 相對於無錯銲錫之_性產層之比^交例16為短,因此可知 素,因此其適性較佳 °丨」銅銲料為相同元 錫=:=情形,本發明之具備銀-錫合金層之鑛 可能性—般回流㈣為低之銲料溫度之 之平均兩二發明之具備銀一錫合金層之鍍錫導電材料 短父又時間係隨鑛銀層之厚度,最初有大幅縮 泡L ’ 〇 Π A 25 λ λ r r . μιη左右為最低值而安定。此被認為 Τ於I㈣層與Sn—3%Ag_G屬銲狀齡成接近銀 锡結晶糸之共晶點組成(Uat% Ag-232°C)所致。 (實施例14) I: “為了驗證本發明之鍍錫導電材料之抗錫晶鬚生成性 機制之理論’測定並解析鑛銀前後鍍錫層之應力。以下說 明其結果。 鑛錫層之應力測定係藉由微焦χ射線應力測定裝置 (理學公司製造,PspC/MSF,40 kV/30 mA,CrKa)進行測 疋由各預义之錫結晶面之波峰強度依S i η2 Φ法計算錫膜 之應力。測定與應力計算用之鍍錫層之錫結晶面方面,依 據熱處理前後錫之結晶狀態,在回流_鍍錫中選定錫(312) 面、一般之鍍錫中選定錫(440)面。 42 320516 200923142 做為利用回流-鍍锡 “合金之板厚0.64=之H中,以C_-p合金及 層、鍍銅層,各形成膜厚i 〇〜板為基材’形成鍍鎳 錫層,再進行回流處理後_、h5 _、2.G _之鍍 膜厚⑽^㈣^^’再於各回㈣錫層上形成 、、© v由、子、主m •⑽之鑛銀層’並於40ΐ之 Γ二::,使其形成銀-錫合金層而製作試驗 二層之錄錫試驗片。各以 所示。 “應力坪估結果如表13及第15圖 [表 13]Reflow treatment, plating, μπι, average zero crossing time, sec, average maximum wetting stress, mN 0. 04 0.48 6. 60 0.04 0.69 6.29 _ ~ 0.89 6.28 uo 6.15 Example 22, particle composition of the right-out layer formed on the surface of the tin layer. For comparison, confirm the comparison example of the average zero point and the time interval = layer. "See the value of the wettability" π: = (melting point 峨) particle composition of the silver layer ==,,, tin (hyun point 232C The time for integration has grown. This is similar to the reaction of the silver 'tin (four) material. Tin is relatively flat compared to Comparative Example 1/2; the thickness of the tin layer is doubled. In contrast, in Example 22 of the thickness of the tin-plated layer and the comparative gold layer, the silver-tin-bonding of Comparative Example 14 was "doubled." Thus, it can be seen that for the solder _ shadow, the layer-to-layer tin plating The film thickness is small. '艮~锡合(Example 13) It is assumed that the use of the error-free zinc tin with a small environmental burden is described using 320516 40 200923142 , Sn-3% Αε^~〇ς〇/ ^ . Evaluate 11 materials ((4) 2_, fresh trough set temperature in order to obtain such as Sn, pb 曰 (4), in the case of using error-free solder, for Sain activity and /, the degree of wetness of the day (zero point and time) ), preparation of Cao temperature::activatlng nux) pre-treatment ^ deliberate to 250 c, in this example, is the front and rear of the wetness of the front, by the results of the pre-test:, _] -=. The evaluation condition of the solder wettability is the same as that of the embodiment 12. ^ is a CU-Mg~P which is a representative of the high-conductivity terminal material by using the Ni/Cu/Sn 3-layer electric ore of the above-mentioned embodiment! Alloy: "·40_ of the copper alloy plate as the substrate, forming a mineral nickel layer, a copper layer, a layer, and after reflow treatment, and then on the tin plating layer A test layer was formed by forming a silver layer of 膜 〇 δ _ film thickness and dipping it in warm water of 45 t for 1 sec second to form a silver-tin alloy layer. The evaluation of solder wetness is the same as the actual one. The evaluation results are shown in the table. ———————- Comparative Example 1 fi ------ ϊ ϊ TT=? violent thickness coffee 1 π λ nickel plating layer μιη mineral copper layer μιη tin plating layer μπι reflow treatment μιη average zero crossing time sec ^ Inventive Example U. 4 0· 3 0.2 1.0 -------- —L__ —---- 3.95 24 — Tai Lu Day only warehouse! 1 0.4 0.3 0.2 1.0 + 0. 01 3. 60 t Xi 1J 0.4 —------- _ 0.3 0.2 1.0 + 0. 02 3.10 'aj 26 '^rz--- BH -/sil 0.4 I· 0.3 0.2 1.0 + 0. 04 2.85 27 ~~ Tai Kung B-day, ϊ 0.4 0.3 0.2 1.0 + 0.06 2. 88 0.4 0.3 0.2 1.0 + 0. 08 2.93 320516 41 200923142 Due to the lead-free soldering, the average zero point and the time of the whole crystal fresh material are high, the composition of the silver - kick all + = ...long, but the surface formed by the silver-tin micro-time average is less than the average zero point of the unwrapped 27 and the ratio of the _ sexual layer of the error-free solder is short, so it is known, so its suitability Preferably, the copper solder is the same element tin =:=, the possibility of the silver-tin alloy layer of the present invention is generally reflowed (four) is the average of the low solder temperature, and the invention has the silver-tin alloy. Layer of tinned conductive material Parent lines and short time of the ore with the thickness of the silver layer, initially a substantial reduction bubble L 'square Π A 25 λ λ r r. Μιη about the minimum value and stability. This is considered to be caused by the eutectic point composition (Uat% Ag-232 °C) of the I (four) layer and the Sn-3% Ag_G solder joint age close to the silver tin crystal ruthenium. (Example 14) I: "In order to verify the theory of the tin-resistant whisker-forming mechanism of the tin-plated conductive material of the present invention", the stress of the tin-plated layer before and after the silver-mine is measured and analyzed. The results are described below. The measurement was performed by a micro-focus ray ray stress measuring device (manufactured by Rigaku Corporation, PspC/MSF, 40 kV/30 mA, CrKa). The peak intensity of each predicted tin crystal surface was calculated by the S i η2 Φ method. The stress of the film. For the determination of the tin crystal surface of the tin plating layer for stress calculation, according to the crystal state of tin before and after the heat treatment, the tin (312) surface is selected in the reflow_tin plating, and the tin (440) is selected in the general tin plating. 42 320516 200923142 As a substrate using a reflow-tin plating "alloy thickness of 0.64 = H, with C_-p alloy and layer, copper plating layer, each forming a film thickness i 〇 ~ plate as a substrate" to form nickel plating Tin layer, after reflow treatment, _, h5 _, 2.G _ coating thickness (10) ^ (four) ^ ^ ' and then formed on each (four) tin layer, © v v, sub, main m • (10) mineral layer 'And at 40 ΐ :::, to form a silver-tin alloy layer to make a test tin film test. Each is shown. “The stress grading results are shown in Table 13 and Figure 15 [Table 13]

在比較例17-19中,由於锡膜炫融而釋放 此顯示小拉伸應力(正值),但隨膜厚之增加變= 面,確認形成有銀-錫合金層之本發明例心扣均具有比 320516 43 200923142 IS:二t:力層之比較例17至19大之拉伸應力,且錫 •銀效果越大。該拉伸應力推測是由在鍍 ·=:中析出之銀或由銀形成㈣之合金化成長成平面 ^產生。此拉伸應力最初隨銀—錫合金層膜厚之增加而 為膜厚增加至0·^"1以上時又變小。推測此是因 二'^ Ag3sn平面狀成長之m變小所導致。亦即,為了 得到最大之拉伸應力則須形成適當厚度之銀合金芦。’’、、 (實施例15) 曰 其次做為利用第2實施樣態之外包鑛錫之實施例,以 u-Fe-P合金之板厚G. 15 之銅合金板為基材,在進行 後’分別再於易產生錫晶鬚之薄鐘錫層(3 及厚 鏡:層U5 上形成同樣厚度〇 〇5 _之鑛銀層,並於 C之溫水中浸潰1G秒鐘,使其形成銀—錫合金層 ^驗片。比較例則製作不形成銀—锡合金層之鍵錫試驗片。 =以此等試驗片3片測定其應力。其評估結果如表Μ及第 1Θ圖所示。 [表 14] __處理 鍍_ μπι 應力 MPa 應力差$ Mpa — 0.05 75.33 32.99 — 0.05 83.59 33. 66 Γ〇Γ〇5 86. 50 30.36 一 42. 34 一 ~~~-— —--- 49. 93 — 56.14 - ※應力差 320516 44 200923142 ,未進行加哉虛採夕 影響產生大的拉;,受電鑛條件及添加劑之 例37、38、39領二:::如别述之實施例14,確認本發明 同時確認,與::=:20、21、22更大之拉伸應力。 情形中,其拉伸岸^合月开>不同’在應用在—般鑛錫之 鐘銀產生之膜之厚度增加而變大,但由 而昱,女絲也w加量(+Λσ)並不因鍍錫膜之厚度 /、 大致為相同之值。田14· -Γ Λ· '.又 應力之增加決定# Ρ ° ’相對於㈣層之拉伸 鑛鍚同樣,為因銀之:r度。此拉伸應力推測與回流 關於錫晶==錫之合金化而產生者。 為基本上、其驅動力是/膜Μ至今曾進行各種研究,而認 動力疋鍍犋本身之應力隨銅_錫合金化 縮應力、因外部端子而再增加之局部之機械性應 :及膜與基材之熱膨脹率差所產生之熱 娜 :。其中,抑制由外部應力所造成之晶鬚產生應該是^In Comparative Examples 17-19, since the small tensile stress (positive value) was released due to the swelling of the tin film, the thickness of the film was changed to become the surface, and it was confirmed that the core buckle of the present invention in which the silver-tin alloy layer was formed was confirmed. Both have a tensile stress greater than that of the comparison of the examples of the 17th to the 19th, and the tin/silver effect is greater than the ratio of 320516 43 200923142 IS: two t: force layer. The tensile stress is presumed to be caused by the growth of silver precipitated in plating ·=: or by alloying of silver (4) into a plane ^. This tensile stress initially decreases as the film thickness increases to 0·^"1 or more as the film thickness of the silver-tin alloy layer increases. It is speculated that this is caused by the decrease in m's planar growth of m's Ag3sn. That is, in order to obtain the maximum tensile stress, a silver alloy alloy of appropriate thickness must be formed. '', (Example 15) Next, as an example of using the tin-coated tin other than the second embodiment, the copper alloy plate of the thickness of the u-Fe-P alloy G. 15 is used as a substrate. After 'respectively, the thin tin layer of tin whiskers (3 and thick mirrors: layer U5 form a layer of 矿5 _ ore) and is immersed in warm water of C for 1G seconds. A silver-tin alloy layer was formed. In the comparative example, a bond tin test piece was formed which did not form a silver-tin alloy layer. = The stress was measured in three test pieces. The evaluation results are shown in Table 1 and Figure 1 [Table 14] __Processing plating _ μπι stress MPa stress difference $ Mpa — 0.05 75.33 32.99 — 0.05 83.59 33. 66 Γ〇Γ〇5 86. 50 30.36 one 42. 34 one~~~----- - 49. 93 — 56.14 - ※The stress difference is 320516 44 200923142. There is no big twist on the effect of twisting and smashing; and the conditions of the mine conditions and additives are 37, 38, 39. 2::: Implementation as described In Example 14, it was confirmed that the present invention confirmed that the tensile stress was greater than::=: 20, 21, and 22. In the case, the stretched shore was opened, and the difference was different in application. The thickness of the film produced by silver in the tin of the tin-like tin is increased and increased, but the amount of the female silk is also increased by the thickness of the tin-plated film, which is approximately the same value. -Γ Λ· '. The increase in stress is determined by # Ρ ° 'relative to the (four) layer of the tensile ore, the same as the silver: r degree. This tensile stress is estimated and reflowed with respect to tin crystal == tin alloying However, in order to basically, the driving force is / membrane Μ has been carried out various studies, and the stress of the 疋 疋 犋 itself is dependent on the copper-tin alloy shrinkage stress, and the local mechanical properties are increased due to external terminals. Should: and the difference between the thermal expansion rate of the film and the substrate generated by the heat: where the suppression of whisker caused by external stress should be ^

V =之_。以下說明本發明中抑·錫導電材料之錫 產生相關之理由。 ^ -般認為,關於—般之純鑛錫被認為是,在有回产之 情形由外部壓頭之局部應力、或在無回流之情形由銅―:合 金之内部應力,對錫膜施域縮應力,因此擠壓錫而產生 晶鬚。另-方面,本發明中之鑛錫導電材料,由與鏡銀之 銀-錫合金化而對錫膜造成拉伸應力。此拉伸應力被認為會 抵消從外部機械性施加之外部壓縮應力或因電錢層本身之 銅-錫合金化所造成之内部Μ縮應力,因此抑制^錫晶鬚 產生。同時,表面之Ag3Sn微粒被認為可藉由對錫粒子環 320516 45 200923142 ,境之凝聚.遷移而分散並缓和嵌合部等之應力。同時Ag3Sn -微粒亦被認為會妨礙錫原子之移動及遷移,因此對單結晶 之針狀錫晶鬚之生成及成長物理性地抑制。 (產業上之可利用性) 因此本發明可提供可減少銀之使用量而可以低成本 製造’並可提高其耐熱性及抗晶鬚生成性之鑛錫導電材料 及其製造方法’以及使用此鍍錫導電材料之通電零件。 【圖式簡單說明】 I 第1圖係本發明之第丨實施樣態之鍍錫導電材料之說 明圖。 第2圖係表示第丨圖中所示鍍錫導電材料在銀-錫合 金形成步驟前之狀態下之說明圖。 第3圖係第丨圖中所示鍍錫導電材料之製造方法之步 驟流程圖。 第4圖係使用第1圖中所示鍵錫導電材料之連接器端 子之說明圖。 ° 第5圖係本發明之第2實施樣態之鍍錫導電材料之說 明圖。 第6圖係表示本發明之第2實施樣態之鑛錫導電材剩 之製造方法之步驟流程圖。 f ?A圖係本發明例1電鍍後表面之電子顯微鏡照片。 f β圖係本發明例1電鑛後剖面之電子顯微鏡照片。 第8A圖係本發明例4之因外部應力產生之晶鬚評估 試驗後表面之照片。 320516 46 200923142 第8B圖係比較例2之因外部應力產生之晶鬚評估試 驗後表面之照片。 、第9A圖係本發明例9之於18〇。〇、12〇小時進行耐熱 試驗後表面之電子顯微鏡照片。 第9B圖係本發明例9之於18〇。〇、12〇小時進行耐熱 試驗後剖面之電子顯微鏡照片。 第10圖係本發明例12至14與比較例7在電鍍後之 XRD測定結果。 照片 第11A圖係本發明例16在電錄後表面 之電子顯微鏡 照片 第11B圖係本發明例16在電鍍後剖面之電子顯微鏡 第12圖係比較例1 〇在回流處理後剖面之照片。 之 第13A圖係本發明例16在自然放置6個月後表 SEM照片。 I 第1犯圖係本發明例16在自然放置6 SEM照片。 個月後表面 之 月後表面之SEM 月後表面之SEM 24至27之銲錫 第13C圖係比較例9在自然放置6個 照片。 第13D圖係比較例9在自然放置6個 照片。 第14圖係表示比較例16、本發明例 濕潤度評估結果之圖表。 第15圖係表示比較例丨7至19、本發明例μ至祁之 320516 47 200923142 應力測定結果之圖表。 第16圖係比較例20至22、本發明例37至39之應力 測定結果之圖表。 【主要元件符號說明】 1 鑛錫導電材料 2 基材 3 鍍鎳層 4 鍍銅層 5 鍍錫層 6 銀-錫合金層 7 銀層 8 連接器端子(通電零.件) 8 A 公端子 8B 母端子 11 鍍錫導電材料 12 基材 14 鍍銅層 15 鍍錫層 16 銀-錫合金層 48 320516V = _. The reason for the tin generation of the tin-preventing conductive material in the present invention will be described below. ^ - It is generally believed that the pure mineral tin is considered to be, in the case of reintroduction, the local stress of the external indenter, or in the absence of reflow, the internal stress of the copper -: alloy, the application of the tin film The stress is reduced, so the tin is squeezed to produce whiskers. On the other hand, the tin-conducting conductive material of the present invention is subjected to alloying with silver-tin of mirror silver to cause tensile stress on the tin film. This tensile stress is considered to cancel the external compressive stress applied from the outside or the internal contraction stress caused by the copper-tin alloying of the electric layer itself, thereby suppressing the generation of tin whisker. At the same time, the surface Ag3Sn particles are considered to be able to disperse and relax the stress of the chisel portion by the agglomeration and migration of the tin particle ring 320516 45 200923142. At the same time, Ag3Sn-particles are also considered to hinder the movement and migration of tin atoms, so that the formation and growth of acicular tin whiskers of a single crystal are physically suppressed. (Industrial Applicability) Therefore, the present invention can provide a tin-conducting conductive material which can reduce the amount of silver used and can be manufactured at low cost, and can improve its heat resistance and whisker-forming property, and a method for producing the same, and use the same. An energized part of tin-plated conductive material. BRIEF DESCRIPTION OF THE DRAWINGS I Fig. 1 is an explanatory view showing a tin-plated conductive material of a third embodiment of the present invention. Fig. 2 is an explanatory view showing a state in which the tin-plated conductive material shown in the figure is before the silver-tin alloy forming step. Fig. 3 is a flow chart showing the steps of the method of manufacturing the tin-plated conductive material shown in the second drawing. Fig. 4 is an explanatory view showing the use of a connector terminal of a key tin conductive material shown in Fig. 1. Fig. 5 is an explanatory view showing a tin-plated conductive material according to a second embodiment of the present invention. Fig. 6 is a flow chart showing the steps of the method for producing the remaining tin-conducting electrically conductive material according to the second embodiment of the present invention. f ? A is an electron micrograph of the surface after plating of Example 1 of the present invention. The fβ map is an electron micrograph of the post-electrode profile of Example 1 of the present invention. Fig. 8A is a photograph of the whisker evaluation due to external stress in Example 4 of the present invention. 320516 46 200923142 Fig. 8B is a photograph of the surface of the whisker evaluation test of Comparative Example 2 due to external stress. Fig. 9A is an illustration of the invention of Example 9 to 18〇. Electron micrograph of the surface after heat resistance test for 12 hours. Fig. 9B is a diagram of Example 9 of the present invention. Electron micrograph of the cross section after the heat resistance test was carried out for 12 hours. Fig. 10 is a graph showing the results of XRD measurement of the inventive examples 12 to 14 and comparative example 7 after electroplating. Photograph 11A is an electron microscope photograph of the surface of the invention of Example 16 after electrodiagnosis. Fig. 11B is an electron microscope of the cross section of the inventive example 16 after electroplating. Fig. 12 is a photograph of a cross section of the crucible after reflow treatment. Fig. 13A is a SEM photograph of Example 16 of the present invention after natural placement for 6 months. I The first ruling picture is a natural SEM photograph of Example 16 of the present invention. SEM 24 to 27 solder on the SEM moon surface of the surface after month of the month. Fig. 13C is a comparative example 9 in which 6 photographs were placed naturally. Fig. 13D is a comparative example 9 in which 6 photographs are naturally placed. Fig. 14 is a graph showing the results of the wetness evaluation of Comparative Example 16 and the present invention. Fig. 15 is a graph showing the results of stress measurement of Comparative Examples 至7 to 19, Examples of the present invention μ to 320516 47 200923142. Fig. 16 is a graph showing the results of stress measurement of Comparative Examples 20 to 22 and Inventive Examples 37 to 39. [Main component symbol description] 1 Tin-tin conductive material 2 Substrate 3 Nickel-plated layer 4 Copper-plated layer 5 Tin-plated layer 6 Silver-tin alloy layer 7 Silver layer 8 Connector terminal (power supply zero.) 8 A male terminal 8B Female terminal 11 Tin-plated conductive material 12 Substrate 14 Copper-plated layer 15 Tin-plated layer 16 Silver-tin alloy layer 48 320516

Claims (1)

200923142 、申請專利範圍·· 種鍍錫導電材料,係包含:具有 成在該且有導雷电注之基材、用 錫爲八 電基材上且由錫或錫合金形成之鑛 形^作聚在前述朗層之表層部麵 2. 如申請專利範圍第,】項之鍍錫導電材料,#中 銀-錫合金層之平均厚度係設定在 Ο.ΟοΓ^ο'μη^:: 圍内者。 μ®之乾 3. 4. 5. =:專利範圍第〗項或第2項之鐘錫導電材料,里 :开;:形成在前述基材與前述鐘錫層間且由銅或銅: 兔心成之鐘銅層。 = 或第2項之㈣導電材料,其 素擴散之擴散H材上且似防止前述基材中之无 專利範圍第3項之鍍錫導電材料,其係具備形 擴散:=才上且用以防止前述基材中之元素擴散之 ^錫^ I材料之製造方法U請專利範圍第1 項或弟2項<鍍錫導電材料之製造方法,其中,具備: 拉姐在具有導電性之基材上形成由錫或錫合金形成之 鍍錫層之鍍錫層形成步驟、 在錫層上形成由銀或銀合金之之 銀層形成步驟、及 在元成有則述娘層之狀態下,保持於1〇。〇以上未 49 320516 200923142 達loot:之溫度2秒鐘以上 錫層之錫進行反應而形成 二二"之銀與别述鍍 形成步驟。 成銀-錫3金層之銀-錫合金層 範圍第6項之錢錫導電材料之製造方法, 備,在前述鑛錫層形成步驟之前,具備於前述 =形成由銅或銅合金組成之鍍銅層之鍍銅層形成 艾驟。 8. =申请專利範1第6項之鍍錫導電材料之製造方法, ^具備’在Μ 4之料層形成步驟之前,在前述基 9. 声J f用以防止刚述基材中之元素擴散之擴散防止 層之擴政防止層形成步驟。 2請專利範圍第7項之鍍錫導電材料之製造方法, :二備、在‘述鍍銅層形成步驟之前,在前述基材 =用以防止前述基材中之元素擴散之擴散防止層 之擴散防止層形成步驟。 請!利範圍第6項之鑛錫導電材料之製造方法, 别逑銀層形成步驟係依從電鑛法、無電解電鏡 /正取代電錢法及蒸艘法之電嫂法中選出之電锻法形 11 ‘由均厚度GQG1至α.1μΠ12前述銀層者。 申請專利範圍第6項之鍍錫導電材料之製造方法, 爲八備’在則遂链錫層形成步驟之後,對前述鍍錫 e方予加熱處理之回流處理步驟。 12^申請專利範圍第6項之㈣導電材料之製造方法, ,、係在將前述基村加工成預定之形狀後,形成前述鍍 320516 200923142 錫層及前述銀-錫合金層。 _ 13. —種通電零件,係使用申請專利範圍第1項或第2項 之鍍錫導電材料。200923142, the scope of application for patents · · Tin-plated conductive materials, including: having a base material formed on the conductive material, and using tin as a base material and formed of tin or tin alloy In the surface layer of the above-mentioned lang layer 2. As the patented scope, the tin-plated conductive material of the item, the average thickness of the #中银-tin alloy layer is set in Ο.ΟοΓ^ο'μη^::. Dry of μ® 3. 4. 5. =: Patent No. or Item 2 of the tin-tin conductive material, in: open; formed between the aforementioned substrate and the aforementioned tin-tin layer and consists of copper or copper: rabbit heart The clock is made of copper. Or (4) the conductive material of the second item (4), which is diffused on the H material and seems to prevent the tin-plated conductive material of the third item in the above-mentioned substrate, which has a shape diffusion: A method for producing a material for preventing the diffusion of an element in the substrate, U. Patent Application No. 1 or 2, and a method for producing a tin-plated conductive material, comprising: a base having conductivity a tin plating layer forming step of forming a tin plating layer formed of tin or a tin alloy, forming a silver layer formed of silver or a silver alloy on the tin layer, and a state in which the mother layer is formed by the element Stay at 1〇. 〇The above is not 49 320516 200923142 Da Loot: The temperature is more than 2 seconds. The tin of the tin layer reacts to form the silver of the second and the other plating formation steps. A method for producing a silver-tin alloy layer of the silver-tin alloy layer of the silver-tin alloy layer, in the sixth aspect of the present invention, is provided before the formation of the mineral tin layer, and is formed by plating the copper or copper alloy. The copper plating layer of the copper layer forms an Ai step. 8. = The method for manufacturing the tin-plated conductive material of claim 6 of the patent specification, ^ having the element before the formation step of the layer 4, the sound is used to prevent the element in the substrate The diffusion prevention layer of the diffusion prevents the layer formation step. (2) The method for producing a tin-plated conductive material according to item 7 of the patent scope, the second substrate, before the step of forming the copper plating layer, the substrate; the diffusion preventing layer for preventing diffusion of elements in the substrate The diffusion preventing layer forming step. please! The manufacturing method of the tin-conducting conductive material of the sixth item of the benefit range, the silver layer forming step is an electric forging method selected according to the electro-mine method, the electroless electron microscope/positive replacement electric money method and the steaming method. 11 'from the above thickness of GQG1 to α.1μΠ12 of the aforementioned silver layer. The method for producing a tin-plated conductive material according to item 6 of the patent application is a reflow treatment step of heat-treating the tin-plated e-side after the step of forming the tantalum-chain tin layer. 12) The method for manufacturing a conductive material according to item 6 of the sixth aspect of the patent application, wherein the tin layer 320516 200923142 and the silver-tin alloy layer are formed after the base portion is processed into a predetermined shape. _ 13. —Electrically energized parts, using tin-plated conductive materials in the first or second patent application. 51 32051651 320516
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