TW200923079A - Cleaning solution and application thereof - Google Patents

Abstract

The invention discloses a cleaning solution comprising at least one oxidizer, at least one guanidine compound, and water. The cleaning solution is used to clean a wafer after chemical mechanical polishing (CMP) process. The cleaning solution is capable of removing the particles and chemical residual on the wafer surface after CMP process. Because the cleaning solution has low amout of metal ions and no odor, the environmental pollution can be prevented.

Description

200923079 IX. INSTRUCTIONS: TECHNICAL FIELD OF THE INVENTION The present invention relates to a cleaning fluid and its use in wafer cleaning after chemical mechanical polishing. [Prior Art] f In the semiconductor process, the method of chemical mechanical polishing (CMP) is often used to flatten the surface of the wafer. After the slurry is polished and the wafer is polished, a number of residues are generated on the surface of the wafer, such as abrasive particles, chemical components in the abrasive slurry, and reaction products of the polishing water. These residual contaminants must be cleaned before entering the next process. If there is a serious impact on the process and the cans (10), use an i-ring: the dye used in the cleaning solution. The purpose of the invention is to provide a cleaning liquid for the purpose of solving the above problems, because the ammonia 4 washing liquid is applied to the cleaning of the wafer after chemical mechanical polishing. The cleaning solution proposed by the invention and the invention contains at least an oxidizing agent and at least a hydrazine compound. 200923079 In the month, the quinone compound has the function of removing residual abrasive particles. Among the compounds, preferred choices are: hydrazine, cesium carbonate, = salt, amino guanidine salt, aminoguanidine hydrochloride or hydrogen carbonate, the preferred content _ percentage 〇; = 财 至 胍 胍 胍 f The nine types of 'subtractive health' are selected as Wei hydrogen, Wei urea, or peroxyacetic acid. As for the preferred content of the oxidant, the quality percentage is 01_

In the vine, the pH of the cleaning solution can be adjusted from pH 7 to 12, and is preferably between acid and acid. In practical applications, an inorganic I sling regulator can be used to adjust the cleaning solution to the desired value of ρ 可视. : 艮, the m of the present invention is prepared by adding a human hydrazine compound at the time of preparation, and adjusting the pH to the desired pH value by using a conventional pH adjusting agent such as a mineral acid as needed. The cleaning solution is simply added with an oxidizing agent prior to use. Another object of the invention is to apply the cleaning solution to a wafer cleaning process after chemical mechanical polishing. The type of the wafer may be a non-metal wafer such as polycrystalline germanium or single crystal diamond. The cleaning solution proposed by the present invention can remove abrasive particles and chemicals remaining on the surface of the wafer after chemical mechanical polishing. Moreover, since the cleaning liquid has a low metal ion content and is odorless, contamination by metal ions can be reduced. The advantages and spirit of the present invention will be further understood from the following detailed description of the invention. [Embodiment] The present invention is further illustrated by the following examples, but the invention is not limited to the scope of the embodiments described below. Example 1 - Π Table 1 shows the formulations used in the cleaning solutions of Examples 1 to 13, with water being the balance. The ingredients and their contents in the table, first add water and terpenoids 'and stir them evenly', then use the stone ore to adjust to the user's required (four) PH value, just add the oxidant and evenly mix in the cleaning solution before use. Just fine. EXAMPLES Content wt% 8 1 2.5 5 Table 1 Cleaning bees Examples 1 to 13 Terpenoids 胍 10 Aminoguanidine

0.1 --· 10 0.5 4 3 2 cerium nitrate amino sulfonium sulphate strontium carbonate specific substance hydrogen phosphate dihydrazone amino sulfonium sulfonate hydrazine amino hydrazine acid hydrogen salt amino hydrazine hydrochloride oxidant content wt% specific substance pH value 1 Hydrogen peroxide 7 0.5 Hydrogen peroxide 8 2 Hydrogen peroxide 10 3 Argon peroxide 11 0.1 Hydrogen peroxide 12 2 Peroxycarboxylic acid 10 5 Peruret peroxide 10 2 Peracetic acid 9 6 Hydrogen peroxide 9 1 Hydrogen peroxide 8 7 200923079 11 2 Aminoguanidine nitrate 1 Hydrogen peroxide 8 12 0.01 Barium acetate 10 Hydrogen peroxide ----- 7 13 5 Carbonic acid pulse 1 Hydrogen peroxide ^--- 2 Urea peroxide 9 L—---- Effect Example 1. The surface of the polycrystalline germanium wafer after chemical mechanical polishing was brushed using deionized water and the cleaning solution of Example 3, respectively. In the present embodiment, the N-brush n used is a polyvinyl alcohol (PVA) roller brush, the brushing time is 1 min, the rolling brush speed is 1 〇〇 φ =, and the cleaning liquid flow rate is 500 ml/min. The surface of the wafer after washing with deionized water, as shown in Figures i and 2; the surface of the wafer after cleaning with a cleaning solution, as shown in Figure 3. As shown in Figs. 1 to 3, the cleaning liquid according to the present invention has a good cleaning energy I for the abrasive particles and chemicals remaining on the surface of the polycrystalline silicon wafer after polishing. Moreover, during the cleaning process, the cleaning solution has a low metal ion content and is odorless to reduce the contamination caused by metal ions. Effect Example 2 t The surface of the chemically polished cerium oxide wafer was brushed with deionized water and the cleaning liquid of Example 7, respectively. In this embodiment, the roller brush used was polyethylene glycol ( PVA) Roller brushing time, the brushing speed is 1 〇, and the cleaning fluid flow rate is 500ml/min. The surface of the wafer after washing with deionized water is shown in Figure 4. The surface of the wafer after cleaning with a cleaning solution is shown in FIG. As shown in Fig. 4 and Fig. 5, the cleaning liquid according to the present invention has a good 'green' ability for the abrasive particles and chemicals remaining on the surface after the removal of the silica dioxide wafer. Further, in the cleaning process, the cleaning liquid according to the present invention has a low metal ion content and is odorless, so that contamination by metal ions can be reduced. 200923079 Effect Example 3 矽ριίϋϊΐΐ ion water and the cleaning solution of Example 9, in the case of multi-twist/two gasification: the surface after the use of the machine is difficult to light, on the surface of the sheet of the embodiment, as shown in FIG. 5Gi) ml/min. Crystallized after washing with deionized water. The surface of the wafer after cleaning with the cleaning solution, as shown in Fig. 7, the wafer is 抛 = throwing the cleaning liquid according to the present invention for the polycrystalline stone / sulphur dioxide eve; the ability tii =; r chemical has good the present invention The materials and reagents used are all commercially available. The details of the specific embodiments of the invention are intended to more clearly describe this == plus, limit. On the contrary, the purpose is to == tHi·the female volleyball is within the scope of the patent scope of the invention to be applied for. Because of the ί ir, the patent _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 200923079 [Simple diagram of the drawing] Figure 1 is a SJBM diagram of the surface of a polycrystalline dream wafer after washing with deionized water, wherein the white spots are abrasive particles remaining on the surface of the wafer. ° Figure 2 is an SEM image of the surface of a polycrystalline silicon wafer after washing with deionized water, where the white stain is a chemical remaining on the surface of the wafer. θ Figure 3 is an SEM image of a polycrystalline germanium wafer after cleaning using the cleaning solution of Example 3. Figure 4 of the SEM surface of the koji shows the surface of the cerium oxide wafer after washing with deionized water. The white spots therein are wafer surface residues. The SEM image is shown in Figure 5. The surface of the diced wafer after washing and washing is shown in Figure 6. Figure 6 is a schematic view of the patterned polycrystalline foot surface after washing with deionized water. Patterned polycrystalline-diox after cleaning of Shixi wafer core cleaning solution [Main component symbol description] No 10

Claims (1)

200923079 X. Patent application scope: 1. A cleaning solution comprising at least one oxidizing agent, at least one terpenoid and water. 2. The cleaning solution according to the first aspect of the invention, wherein the quinone compound is strontium, barium strontium, barium acetate, bismuth hydrogen phosphate, barium hydrochloride, barium nitrate, barium sulfate, hydrazine, amino hydrogen carbonate Salt, amino acid salt, aminoguanidine hydrochloride J 胍 nitrate. 4. The cleaning solution according to claim 1, wherein the terpenoid is 0.01-10% by mass. 4, = the cleaning solution described in the scope of claim 1, which makes the oxidant hydrogen peroxide, hydrogen peroxide, peroxyformic acid or peracetic acid. 5. The cleaning solution according to claim 1, wherein the oxidizing agent is in a content of 0.1-10% by mass. Σσ 6. The cleaning liquid according to claim 1, wherein the cleaning liquid has a pH of 7 to 12 °, and the cleaning liquid according to claim 6 of the patent application, wherein the cleaning liquid is? The 11 value is 8_11 ° 8. The cleaning liquid described in claim 1 is applied to wafer cleaning after chemical mechanical polishing. 11 200923079 VII. Designated representative map: (1) The representative representative of the case is the picture of (3). (2) A brief description of the symbol of the representative figure: M. 8. If there is a chemical formula in this case, please disclose the chemical formula that best shows the characteristics of the invention: