200921739 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種場發射電子源的製備方法，尤其涉及 一種基於奈米碳管的場發射電子源的製備方法。 【先前技術】 場發射電子源在低溫或者室溫下工作，與電真空养件 中的熱發射電子源相比具有能耗低、响應速度快及低放電 等優點，因此用場發射電子源替代電真空器件中的熱發射 電子源成為了人們研究的一個熱點。 奈米碳管（Carbon Nanotube，CNT)係一種新型碳材料， 由日本研究人員1ijima在1991年發現，請參見"Helical Microtubules of Graphitic Carbon", S. Iijimaj Natufe> ν〇1·354，Ρ56 (1991)。奈米碳管具有極優異的導電性能、良 好的化學穩定性和大的長徑比’且其具有幾乎接近理論極 限的尖端表面積（尖端表面積愈小’其局部電場愈集中）， 因而奈f碳管在場發射真空電子源領域具有潛在的應用前 景。目前的研究表明，奈米碳管係已知的最好的場發射材 枓之-，它的尖端尺寸只有幾奈米至幾十奈米，具有低 開啟電壓，可傳輸極大的電流密度，並且電流穩定，使用 :命長，因而非常適合作為—種極佳的點電子源，應用在 T描電子顯微鏡（Scanning Electr〇n Micr〇sc〇pe)、透射電子 m ^ ^ (Transmission Electron Microscope) f ^ ^ ^ 射部件_。 J电丁l 先前的奈米碳管場發射電子源一般至少包括—導電基 200921739 體和作為發射端的奈米碳管’該奈米碳管形成於該導電基 體上。目前，奈米碳管形成於導電基體上的方法主要包括 機械方法和原位生長法。其中，機械方法係通過原子力顯 微鏡或者電子顯微鏡操縱單根奈米碳管’將該奈米碳管組 裝到一導電基體上，此種方法程序簡單，但由於單根奈米 碳管^寸太小，導致操作不容易且效率低。另外，通二該 方法得到的奈米碳管場發射電子源的場發射電流小。 為克服上述機械法組裝的奈米碳管場發射電子源的p 發射電流小及操作複雜的缺點。先前技術提供了—種採: 原位生長的方法，該方法係先在導電基體上鑛上金屬催化 後通過化學氣相沈積、電弧放電或鐳射蒸發法等方 濟基體上直接生長出奈米碳管陣列作為場發射電子 源’此種方法操作簡單，牟乎 好。缺，夺乎w^未反吕與¥電基體的電接觸良 …、不未妷吕與導電基體的結合力較弱，在 米碳管易脫落或被電場力拔出 守不 據。另从^ 琢刀披出攸而導致場發射電子源損 碳管之間存在電場纟°構中奈㈣管陣列的奈米 姆發：ΐ:=效應’工作時往往只有極少部分奈 度U發射電子，亦無法有效提高場發射電子源的電流密 有鐾于此，提供―錄目 電子源的製備方法實為必要。X㈣發射電流的場發射 【發明内容】 一種場發射電子源的 一奈米碳管長後·Λ / ，匕括以下步驟：提供 反g長線，加熱該奈米碳管長 供 焚踝，美供一電子發射 200921739 使用該電子發射源轟擊該奈米碳管長線，使該奈米碳 B長線在被轟擊處炫斷；將溶斷後的奈米碳管長線設置於 導電基體均得到場發射電子源。 、與先則技術相比較，該場發射電子源的製備方法具有 以下優點.其一，該電子發射源所發射的電子束較為集中， 電子束的局域轟擊作用可以加快該奈米碳管長線的溶斷； 其:^ %發射電子源的製備實現了對奈米碳管長線的定 點=斷，可以較精確地控制該奈米碳管長線的熔斷位置且 該製備方法簡單，可以提高該場發射電子源的製備效率； '、 該方去可以獲得基於奈米碳管長線的場發射電子 源，該場發射電子源具有較大的場發射電流；其四，該方 法可使奈米碳管長線熔斷並形成多個場發射尖端，可以有 效降低奈米碳管之間的電磁屏蔽效應。 【實施方式】 以下將結合附圖詳細說明本技術方案場發射電子源及 其製備方法。 明參閱圖1 ’本技術方案實施例提供一種場發射電子源 10 ’其包括一導電基體14和一奈米碳管長線12。該奈米 碳官長線12具有一第一端122及與第一端122相對的第二 端124’該奈米碳管長線12的第一端122與該導電基體14 電連接，該奈米複管長線12的第二端124從導電基體14 向外延伸作為電子發射端。 進一步地，所述的奈米碳管長線12係由多個平行的首 尾相連的奈米碳管束組成的束狀結構或由多個首尾相連的 200921739 奈米碳官束組成的絞線結構，該相鄰的奈米碳管束之間通 過凡德瓦爾力緊密結合，該奈米碳管束中包括多個首尾= 連且定向排列的奈米碳管。該奈米碳管長線12的直徑為工 微米〜100微米。所述的奈米碳管長線12的第二端 類圓錐形，該奈米碳管長線12第二端的直徑沿遠離導電基 體14的方向逐漸減小。請參關2,該奈米碳管長線& 的第二端124包括多個突出的場發射尖端16。所述的場發 射尖端包括多個基本平行的奈米碳管，該多個奈米碳^ =通過凡德瓦爾力緊密結合。所述的場發射尖端Μ為類 圓錐形。該場發射尖端16的頂端突出有一根 其 162。該奈米碳管長線12中的奈米碳管為單壁、雙壁或： =米碳管。該奈米碳管長線12中奈米碳管的直徑 奈来，長度範圍為10微米〜1〇〇微来。 、 5月參閱圖3及圖4,我們可以看出太乎 發射尖端的頂端突出有二看出…官長線中的場 產作用下定點溶斷，溶斷的瞬間碳溶化 — 力將這些奈米碳管緊緊束缚在-起。使該奈米 二長線具有很好的機械性能和電性能，可以有效提高:亥 的場發射電子的能力。該奈米碳管長線； 般為2層或者C更、.，田的直徑，其壁數少於5層- ==管陣列的奈米碳管的層數多於 轟擊的作用下。奈米碳管壁數減少的原因係由於在電子束 ，不斷升高的溫度使一些富含缺陷的石墨層 200921739 .崩潰’石炭元素蒸發。而直徑的減少係被加熱至高溫的奈米 碳管受一定的拉力作用發生塑性形變，變長變細。該奈米 碳管長線中的場發射尖端的頂端的奈米碳管與其他遠離該 場發射尖端的頂端的奈米碳管緊密結合，使得該場發射尖 端的頂端的奈米碳管在場發射過程中產生的熱量可以很有 效地被傳導出去，並且可以承受較強的電場力。 該導電基體14由導電材料製成，如銅、鎳、鶴、金、 錮、翻等。該導電基體14可依實際需要設計成其他形狀， 如錐形、細小的柱形或者圓臺形。該導電基體卩也可為形 成在一絕緣基底上的導電薄膜。 可以理解’該奈米碳管長線12的第一端122可以通過 :導電膠與該導電基體14f連接。該電連接的方式也可以 Ϊ =子間力或者其他方式實現。該奈米碳管長線12與導 之間的位置關係不限’只需確保該奈米碳管長線 ”的第…22與該導電基體14電連接即可。如 官長線12與導電基體14的 ； 長線爾電基體14的轴向的夾角奈未石反官 長線12與導電基體14的軸向相互平行。 丁十反吕 ,if 本技術方案實施例提供一種製備 上^%發射電子源Η)的方法，具體包括以下步驟： 步驟一：提供一奈米碳管 該陣列為超順排奈米碳管陣列車:丨形成於-基底’優選地’ 本技術方案實施顺供的奈切管 ^陣列、雙壁奈米碳管陣列及多壁奈靖：；；的: 200921739 .種。該奈米碳管陣列的製備方法採用化學氣相沈積法，其 -具體步驟包括：（a)提供一平整基底，該基底可選用卩型 或N型矽基底，或選用形成有氧化層的矽基底，本實施例 優選為採用4英寸的矽基底；（b)在基底表面均勻形成一 催化劑層，該催化劑層材料可選用鐵（Fe )、鈷（c〇)、鎳 (Ni)或其任意組合的合金之一；（c)將上述形成有催化 1層的基底在70(TC〜90(TC的空氣中退火約3〇分鐘〜9〇分 ，知，（d )將處理過的基底置於反應爐中，在保護氣體環境 下加熱到50(TC〜74CTC，然後通入碳源氣體反應約5分鐘 〜30分鐘，生長得到奈米碳管陣列，其高度為微米左 右。該奈米碳管陣列為多個彼此平行且垂直於基底生長的 奈米碳管形成的純奈米碳管陣列。該奈米碳管陣列與上述 基底面積基本相同。通過上述控制生長條件，該超順排夺 米碳管陣列中基本不含有雜質，如無定型碳或殘留的们丁匕 劑金屬顆粒等。 l 本實施例中碳源氣可選用乙炔、乙烯、曱烷等化學性 質較騎的碳氫化合物，本實施例優選的碳源氣為乙块； 保I氣體為氮氣或惰性氣體，本實施例優選的保護氣體 氬氣。 了、理解本技術方案實施例提供的奈米碳管陣列不 限於上述製傭方法，也可為石墨電極恒流電弧放電沈積 法、鐳射蒸發沈積法等等。 、 步驟二：採用一拉伸工具從奈米碳管陣列中拉取奈米 兔官獲得一奈米碳管薄獏或—奈米碳管絲。 11 200921739 該奈米碳管薄膜或者奈米碳管絲的製傷具體包括以下 •步驟.U)從上述奈米碳管陣列中選定—定寬度的多個太 米碳管片斷，本實施例優選為採用具有—定 : 觸奈米破管陣列以選定一定寬度的多個奈米碳管東： 以:定速度沿基本垂直于奈米碳管陣列生長方向拉伸多個 ^米碳管束’以形成—連續的奈米碳管薄膜或者奈来碳 在上述拉伸過程中，該多個奈米碳管束在拉力作用下 沿㈣方向逐漸脫離基底的同時，由於凡德瓦爾力作用， 的多個奈米碳管束分別與其他奈米 ==出’從而形成一奈米碳管薄膜或者一奈= 「^該不米碳管薄膜或者奈米碳管絲包括多個首尾相連 二::二:：炭管束。該奈米碳管薄膜或者奈米碳管 = 向基本平行于奈米碳管薄膜或者* 夺平膜==有機溶劑或者施加機械外力處理該 p卡厂…#膜或者奈米石炭管絲得到—奈米碳管長線12。 使用所㈣的奈米碳管薄職者奈米碳管絲可 過試管將有機溶劑滴落在奈米碳管薄膜或二 卜4表面浸潤整個奈米碳管薄膜或者 ς 有機溶劑為揮發性有機溶劑，如乙醇、甲醇、_二， 乙烷或氣仿，本實施例中優選採用 =虱 或者奈米細經有機溶劑浸潤處理後，在; 12 200921739 劑的表面張力的作用下，奈米碳管薄膜或者奈米碳管絲中 的平行的奈米碳管片斷會部分聚集成奈米碳管束，因此， 該奈米碳管相I缩成絲。該奈米碳管絲表面體積比小，’ 無枯性’且具有良好的機械強度及㈣，應用有 理後的奈米碳管薄膜或者奈米石炭管絲能方便地應用於;^ 領域。 規 所述步驟二中製備的奈米碳管薄膜或者奈米碳管絲也 可通過施加機械外力處理得到一奈米碳管長線12。提供一 個尾部可以粘住奈米碳管陣列的紡紗軸。將該紡紗軸的尾 部與奈米碳管陣列結合後，奈米碳管開始纏繞在轴的周 圍。將該紡紗軸以旋轉的方式旋出並向遠離奈米碳管陣列 的方向運動。這時奈米碳管陣列相對於該紡紗軸移動時， 纖維開始纺成，其他的奈米$管可以纏繞在纖維的周圍， 增加纖維的長度。可以理解，上述紡紗軸的旋轉方式不限， 可X正轉，也可以反轉，或者正轉和反轉相結合。 —可以理解，也可以採用一拉伸工具從步驟一的奈米碳 管陣列中直接拉取奈米碳管獲得一奈米碳管長線12。 步驟四：加熱該奈米碳管長線12。 將該奈米碳管長線12放置於一真空系統。該真空系統 的真工度維持lxl0 4帕〜1χ1〇_5帕。在該奈米碳管長線u 中通入電流’加熱該奈米碳管長線12至18〇〇κ〜2500K。 步驟五：提供一電子發射源20，使用該電子發射源20 轟擊該奈米碳管長線12，使該奈米碳管長線u在被轟擊 處121溶斷。 200921739 提供一電子發射源20，該電子發射源2〇包括一太米 .碳管長線。將該電子發射源20接入一低電位，該奈米^管 長線12接入一高電位。將該電子發射源2〇與該奈米碳^ 長線12垂直且間隔設置，並使該電子發射源加指向該太 米碳管長線12被轟擊處121。該電子發射源2〇發射的； 子束201轟擊該奈米碳管長線12的側壁，使該奈米碳管長 線12被轟擊處121的溫度升高。這樣一來，該奈 广線12被轟擊處121具有最高的溫度。該奈米唉管長線η 、2在該轟擊處121賴。本技術方案實施例優選的奈米碳 管長線12具有多個場發射尖端。 進一步地，上述電子發射源2〇相對於該奈米碳管長線 12的具體定位，可以通過一操作臺來實現。其中，該電子 發射源2G與該奈米碳管長線12之間的距離為5q微米〜2 耄米。本技術方案實施例優選將該奈米碳管長線12固定到 一個可以實現三維移動的操作臺上。通過調節該奈米碳管 12在三維空間的移動，使該電子發射源汕與該奈米 碳管長線12纟同一平面内並且互相垂直。該電子發：源 2〇與該奈米碳管長線12之間的距離為5〇微米。 —可以理解，為了提供更大的場發射電流以提高該奈米 碳管長線12局域的溫度，可以使用多個電 ^ = 時提供場發射m步地，射⑽料_原式=電同 子束來實現該奈米碳管長線12的定點㈣，比如傳統的熱 陰極電子源發射的電子束或者其他常見場發射電子源發射 14 200921739 步驟六：將熔斷後的奈米碳管長 14上即得到場發射電子源1G。1線12&置於導電基體 :燒斷後的奈米碳管長線12通過導電膠㈣於咳導 電基體14之上’即可得到該場發射電子源1〇。 導電ST:之：可預先將該奈米碳管長線12設置在兩個 :溶斷該奈米碳管長線12製備該場發 管：線時，也可將多個具有電子發射端的奈米碳 長線12 s又置於一導電基體14之上 發射端的場發射電子源1〇。 '〃夕個電子 請參閱圖7,為奈米碳管長線12的場發射尖端㈣ ^先譜圖。用拉曼光譜分析表明經過熱處 :線12的場發射尖端―顯的降低 的缺时更低。也就說，奈米碳管長線12的場發射：： 6=/^纽_過程中^得到了極大的提高。這 /方面係由於奈米碳管經過熱處理後缺陷減少，另 係因為富含缺陷的石墨層容易在 質較高的石墨層。 肖在W ’剩下一些品 結果發射電子源的場發射性能測試 長線12經過定點輯處理後形成兩個 X’％。該場發射電子源的場發射性能賴係用一個 電極進行測量的’其中該鎢針尖分別與該兩個 100=對。該鶴針尖與該電子發射端之間的距離為 "、錯射炫斷形成的兩個電子發射端均可以在較低 的工作電愿下提供150微安以上的場發射電流。由於該奈 15 200921739 米石反官長線12的直徑大約為5微米，因此該場發射電流的 密度大於700安/平方厘米。 练上所述，本發明確已符合發明專利之要件，遂依法200921739 IX. Description of the Invention: [Technical Field] The present invention relates to a method for preparing a field emission electron source, and more particularly to a method for preparing a field emission electron source based on a carbon nanotube. [Prior Art] The field emission electron source operates at low temperature or room temperature, and has the advantages of low energy consumption, fast response speed, and low discharge compared with the heat emission electron source in the electric vacuum maintenance member. Therefore, the field emission electron source is used. The replacement of the heat-emitting electron source in the electric vacuum device has become a hot spot of research. Carbon Nanotube (CNT) is a new type of carbon material discovered by Japanese researcher 1ijima in 1991. Please refer to "Helical Microtubules of Graphitic Carbon", S. Iijimaj Natufe> ν〇1·354,Ρ56 ( 1991). The carbon nanotubes have excellent electrical conductivity, good chemical stability and large aspect ratio' and have a tip surface area close to the theoretical limit (the smaller the tip surface area is, the more concentrated the local electric field is), so the n-carbon The field of field emission vacuum electron source has potential application prospects. Current research shows that the best field-emissive materials of the carbon nanotubes are known to have a tip size of only a few nanometers to tens of nanometers, a low turn-on voltage, and a very high current density. The current is stable, the use of: long life, so it is very suitable as an excellent point electron source, applied to Scanning Electr〇n Micr〇sc〇pe, Transmission Electron Microscope f ^ ^ ^ Shooting part _. The former carbon nanotube field emission electron source generally includes at least a conductive group 200921739 body and a carbon nanotube as a emitting end. The carbon nanotube is formed on the conductive substrate. At present, the method of forming a carbon nanotube on a conductive substrate mainly includes a mechanical method and an in situ growth method. Among them, the mechanical method is to assemble a single carbon nanotube by atomic force microscopy or electron microscopy to assemble the nano carbon tube onto a conductive substrate. This method is simple, but the single carbon nanotube is too small. , resulting in an operation that is not easy and inefficient. In addition, the field emission current of the carbon nanotube field emission electron source obtained by the method is small. In order to overcome the shortcomings of the small emission current and complicated operation of the carbon nanotube field emission electron source assembled by the above mechanical method. The prior art provides a method for in-situ growth, which firstly grows nanocarbon directly on a square substrate such as chemical vapor deposition, arc discharge or laser evaporation after conducting metal catalysis on a conductive substrate. The tube array acts as a field emission electron source'. This method is simple and easy to operate. Lack of power, the electrical contact with the electric base is not good, and the combination of the electric and the base is weak, and the carbon tube is easy to fall off or is pulled out by the electric field. Another 从 披 披 攸 攸 攸 攸 攸 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 场 奈 奈 奈 奈 奈 奈 奈 奈 奈 奈 奈 奈Electrons can not effectively increase the current of the field emission electron source. Therefore, it is necessary to provide a method for preparing a recording electron source. X (4) Field emission of emission current [Summary] A field emission electron source of a carbon nanotube length Λ / , including the following steps: providing an anti-g long line, heating the carbon nanotube for the incineration, the United States for an electron Launch 200921739 The electron emission source is used to bombard the long carbon nanotube line, so that the long carbon carbon line is stunned at the bombardment; the long-line carbon nanotubes after the dissolution are disposed on the conductive substrate to obtain a field emission electron source. Compared with the prior art, the method for preparing the field emission electron source has the following advantages. First, the electron beam emitted by the electron emission source is concentrated, and the local bombardment of the electron beam can accelerate the long line of the carbon nanotube. The dissolution of the electron source is realized by the preparation of the electron source of the nano carbon tube, and the melting position of the long carbon line of the carbon nanotube can be controlled more accurately, and the preparation method is simple, and the field can be improved. The production efficiency of the emission electron source; ', the party can obtain a field emission electron source based on the long line of the carbon nanotube, the field emission electron source has a large field emission current; fourth, the method can make the carbon nanotube long The wire is blown and forms a plurality of field emission tips, which can effectively reduce the electromagnetic shielding effect between the carbon nanotubes. [Embodiment] Hereinafter, a field emission electron source of the present invention and a preparation method thereof will be described in detail with reference to the accompanying drawings. Referring to FIG. 1 ', the embodiment of the present invention provides a field emission electron source 10' which includes a conductive substrate 14 and a carbon nanotube long line 12. The nano carbon official line 12 has a first end 122 and a second end 124 ′ opposite the first end 122. The first end 122 of the carbon nanotube long line 12 is electrically connected to the conductive substrate 14 . The second end 124 of the tube length 12 extends outwardly from the conductive substrate 14 as an electron-emitting end. Further, the carbon nanotube long line 12 is a bundle structure composed of a plurality of parallel end-to-end connected carbon nanotube bundles or a stranded structure composed of a plurality of end-to-end 200921739 nano carbon official beams. The adjacent carbon nanotube bundles are tightly coupled by van der Waals force, and the carbon nanotube bundle includes a plurality of first and last tailed and aligned carbon nanotubes. The carbon nanotube long wire 12 has a diameter of from micrometers to 100 micrometers. The second end of the carbon nanotube long line 12 is conical, and the diameter of the second end of the long carbon tube 12 is gradually reduced in a direction away from the conductive substrate 14. Referring to FIG. 2, the second end 124 of the carbon nanotube long line & includes a plurality of protruding field emission tips 16. The field emission tip comprises a plurality of substantially parallel carbon nanotubes, the plurality of nanocarbons being tightly coupled by van der Waals forces. The field emission tip turns into a conical shape. The top end of the field emission tip 16 has a 162 protruding therefrom. The carbon nanotubes in the long carbon nanotube 12 of the carbon nanotubes are single-walled, double-walled or: = carbon nanotubes. The diameter of the carbon nanotubes in the long carbon 12 of the nano carbon tube is in the range of 10 micrometers to 1 micrometer. Referring to Figure 3 and Figure 4 in May, we can see that the top of the launching tip protrudes from the top of the launching line. The spotting of the field in the official line is dissolved, and the carbon melts at the moment of dissolution - the force will be these nanometers. The carbon tube is tightly bound. The nanometer long wire has good mechanical properties and electrical properties, which can effectively improve the ability of the field to emit electrons. The carbon nanotube long line; generally 2 layers or C, the diameter of the field, the number of walls is less than 5 layers - = = the number of layers of the carbon nanotubes of the tube array is more than the impact of bombardment. The reason for the decrease in the number of carbon nanotube walls is due to the electron beam, the rising temperature makes some graphite layers rich in defects 200921739 . The reduction in diameter is caused by a certain tensile force of the carbon nanotubes heated to a high temperature, which is plastically deformed and becomes thinner and thinner. The carbon nanotube at the top of the field emission tip in the long line of the carbon nanotube is tightly coupled with other carbon nanotubes distal to the tip of the field emission tip, so that the carbon nanotube at the top of the field emission tip is emitted in the field. The heat generated in the process can be conducted very efficiently and can withstand strong electric field forces. The conductive substrate 14 is made of a conductive material such as copper, nickel, crane, gold, rhodium, turn, and the like. The conductive substrate 14 can be designed into other shapes according to actual needs, such as a cone shape, a small column shape or a truncated cone shape. The conductive substrate 卩 may also be a conductive film formed on an insulating substrate. It will be understood that the first end 122 of the carbon nanotube long wire 12 can be connected to the conductive substrate 14f by a conductive paste. The way of electrical connection can also be achieved by Ϊ = inter-sub force or other means. The positional relationship between the long carbon wire 12 of the carbon nanotube and the guide is not limited to 'only need to ensure that the second half of the carbon nanotube long line' is electrically connected to the conductive substrate 14. For example, the length of the official line 12 and the conductive substrate 14 The axial angle of the long-term electrical base 14 is parallel to the axial direction of the conductive substrate 14 in the axial direction of the conductive substrate 14. Ding Shi-rui, if the embodiment of the present invention provides a preparation of the upper electron emission source Η) The method specifically includes the following steps: Step 1: providing a carbon nanotube tube, the array is a super-sequential carbon nanotube array vehicle: a crucible is formed on the substrate, preferably 'the present embodiment, the implementation of the nephew tube array, The double-walled carbon nanotube array and the multi-walled Nai Jing:;; 200921739. The carbon nanotube array is prepared by chemical vapor deposition, and the specific steps include: (a) providing a flat substrate, The substrate may be selected from a 卩-type or N-type ruthenium substrate, or a ruthenium substrate formed with an oxide layer. In this embodiment, a 4-inch ruthenium substrate is preferably used; (b) a catalyst layer is uniformly formed on the surface of the substrate, and the catalyst layer material is formed. Optional iron (Fe), cobalt (c) one of the alloys formed with the catalytic one layer described above is annealed in 70 (TC to 90 (TC air) for about 3 minutes to 9 minutes, It is known that (d) the treated substrate is placed in a reaction furnace, heated to 50 (TC~74CTC in a protective gas atmosphere, and then reacted with a carbon source gas for about 5 minutes to 30 minutes to grow to obtain a carbon nanotube array. The carbon nanotube array is a plurality of pure carbon nanotube arrays formed by a plurality of carbon nanotubes that are parallel to each other and perpendicular to the substrate. The carbon nanotube array is substantially the same area as the substrate. Through the above controlled growth conditions, the super-sequential carbon nanotube array is substantially free of impurities, such as amorphous carbon or residual bismuth metal particles, etc. l In this embodiment, the carbon source gas may be selected from acetylene and ethylene. For a hydrocarbon having a chemical nature such as decane, the preferred carbon source gas of the present embodiment is a block; the I gas is nitrogen or an inert gas, and the preferred protective gas of the present embodiment is argon. The carbon nanotube array provided by the example is not limited The above-mentioned manufacturing method may also be a graphite electrode constant current arc discharge deposition method, a laser evaporation deposition method, etc. Step 2: Using a stretching tool to pull a nano rabbit from an array of carbon nanotubes to obtain a nanometer. Carbon tube thinner or - carbon nanotube wire. 11 200921739 The damage of the carbon nanotube film or the nano carbon tube wire includes the following steps: U) selected from the above carbon nanotube array - fixed width For a plurality of carbon nanotube segments, in this embodiment, it is preferred to use a plurality of carbon nanotubes having a certain width: a nanometer tube array to select a certain width: at a constant velocity along a substantially perpendicular to the carbon nanotube array Stretching a plurality of carbon nanotube bundles in the growth direction to form a continuous carbon nanotube film or Nai carbon. During the above stretching process, the plurality of carbon nanotube bundles are gradually separated from the substrate in the (four) direction by the tensile force. At the same time, due to the van der Waals force, the plurality of carbon nanotube bundles are respectively combined with other nanometers == to form a carbon nanotube film or a nanometer = "^ the carbon nanotube film or the carbon nanotube The wire consists of a number of end-to-end two:: two:: carbon tube bundle. The carbon nanotube film or the carbon nanotubes = to be substantially parallel to the carbon nanotube film or * flattening film == organic solvent or apply mechanical external force to treat the p card factory ... #膜 or nano carbon pipe wire obtained - Nano carbon tube long line 12. Using the carbon nanotubes of the (4) carbon nanotubes, the carbon nanotubes can be used to immerse the organic solvent in the tube or the surface of the surface of the carbon nanotubes or dip the surface of the entire carbon nanotube film or ς the organic solvent is volatile organic a solvent, such as ethanol, methanol, hexane, ethane or gas, in the present embodiment, preferably after the infiltration of the organic solvent in the 虱 or nano-fine, after the surface tension of the 12 200921739 agent, the nano carbon The parallel carbon nanotube segments in the tube film or the carbon nanotube wire are partially aggregated into the carbon nanotube bundle, so that the carbon nanotube phase I is shrunk into a filament. The nano-carbon tube has a small surface volume ratio, 'no dryness' and good mechanical strength and (4), and the application of a rational carbon nanotube film or a nano-carbon tube can be conveniently applied to the field. The carbon nanotube film or the carbon nanotube wire prepared in the second step of the specification can also be treated by applying a mechanical external force to obtain a long carbon nanotube 12 of a carbon nanotube. A spinning shaft is provided that can be attached to the array of carbon nanotubes. After the tail of the spinning shaft is combined with the carbon nanotube array, the carbon nanotubes begin to wrap around the shaft. The spinning shaft is rotated in a rotating manner and moved in a direction away from the array of carbon nanotubes. At this point, when the array of carbon nanotubes moves relative to the spinning axis, the fibers begin to be spun, and other nanotubes can be wrapped around the fibers to increase the length of the fibers. It can be understood that the rotation mode of the above-mentioned spinning shaft is not limited, and X can be rotated forward or reversed, or combined with forward rotation and reverse rotation. - It can be understood that a carbon nanotube long line 12 can also be obtained by directly pulling a carbon nanotube from the carbon nanotube array of step one using a stretching tool. Step 4: Heat the long carbon tube 12 of the carbon nanotube. The carbon nanotube long wire 12 is placed in a vacuum system. The vacuum system's true degree of maintenance maintains lxl0 4 Pa ~ 1 χ 1 〇 _ 5 Pa. A current is applied to the long carbon wire u of the carbon nanotubes to heat the long carbon nanotubes of 12 to 18 κ 2 to 2500 K. Step 5: An electron emission source 20 is provided, and the carbon nanotube long line 12 is bombarded with the electron emission source 20, so that the carbon nanotube long line u is dissolved at the bombardment point 121. 200921739 provides an electron emission source 20 comprising a long line of carbon nanotubes. The electron emission source 20 is connected to a low potential, and the nanowire 12 is connected to a high potential. The electron emission source 2 is perpendicular to and spaced apart from the nanocarbon long line 12, and the electron emission source is directed to the bombarded portion 121 of the long carbon nanotube 12 of the carbon nanotube. The electron emission source 2 is emitted; the sub-beam 201 bombards the side wall of the carbon nanotube long line 12, so that the temperature of the carbon nanotube long line 12 is increased by the bombardment 121. In this way, the nanowire 12 is bombarded with the highest temperature. The long line η, 2 of the nanotube tube is at the bombardment point 121. Preferred nanocarbon tube long wires 12 of embodiments of the present embodiments have a plurality of field emission tips. Further, the specific positioning of the electron emission source 2 〇 relative to the long carbon line 12 of the carbon nanotube can be realized by a console. Wherein, the distance between the electron emission source 2G and the long carbon wire 12 of the carbon nanotube is 5 q micrometers to 2 nanometers. The embodiment of the present technical solution preferably fixes the carbon nanotube long wire 12 to a console that can realize three-dimensional movement. By adjusting the movement of the carbon nanotube 12 in a three-dimensional space, the electron emission source 汕 is in the same plane as the long line 12 纟 of the carbon nanotube and is perpendicular to each other. The electron emission: the distance between the source 2 〇 and the long carbon wire 12 of the carbon nanotube is 5 〇 micrometer. - It can be understood that in order to provide a larger field emission current to increase the temperature of the local area of the carbon nanotube long line 12, it is possible to use a plurality of electric ^ = to provide field emission m steps, shot (10) material _ original = electric The beam is used to achieve the fixed point of the carbon nanotube long line 12 (4), such as the electron beam emitted by a conventional hot cathode electron source or other common field emission electron source emission 14 200921739 Step 6: The carbon nanotube after the fuse is 14 A field emission electron source 1G is obtained. The 1 line 12& is placed on the conductive substrate: the burned carbon nanotube long line 12 passes through the conductive paste (4) over the cough conductive substrate 14 to obtain the field emission electron source 1〇. Conductive ST: It can be pre-set the carbon nanotube long line 12 in two: dissolve the carbon nanotube long line 12 to prepare the field tube: line, it can also be a plurality of nano carbon with electron emission end The long line 12 s is again placed on the field emission electron source 1 发射 at the emitting end of a conductive substrate 14. '〃夕电子 Please refer to Figure 7, which is the field emission tip of the long carbon nanotube 12 (4) ^ pre-spectrum. Analysis by Raman spectroscopy indicates that the heat is passed: the field emission tip of line 12 - the apparently reduced time lag is lower. In other words, the field emission of the long carbon tube 12 of the carbon nanotubes: 6 = / ^ New _ in the process ^ has been greatly improved. This is due to the reduced defects of the carbon nanotubes after heat treatment, and because the graphite layer rich in defects is easy to be in the higher graphite layer. Shaw left some products in the W' field. The field emission performance test of the resulting electron source was formed by the fixed-point processing to form two X'%. The field emission performance of the field emission electron source is determined by measuring with an electrode where the tungsten tip is respectively associated with the two 100= pairs. The distance between the tip of the crane and the electron-emitting end is ", and the two electron-emitting ends formed by the faulty splatter can provide a field emission current of 150 microamperes or more at a lower working power. Since the diameter of the Nishi 15 200921739 Mishi anti-official line 12 is approximately 5 microns, the field emission current density is greater than 700 A/cm 2 . In the practice, the invention has indeed met the requirements of the invention patent,
提出專利申請。惟，以卜邮、+、土 W 斤逑者僅為本發明之較佳實施例， 自不能以此限制本幸之由社_m 、 之人m Μ ㈣.°舉凡熟悉本案技藝 ^ ^ -ρ Φ ^ 仏飾或變化，皆應涵 盍於以下申凊專利範圍内。 16 200921739 【圖式簡單說明】 圖1係本技術方案實施例的場發射電子源的結構示意 圖。 ' Q 2係圖1中奈米碳管長線的電子發射端的放大示意 圖。 圖3為本技術方案實施例獲得的奈米碳管長線的電子 發射端的掃插電鏡照片。 圖4係本技術方案實施例獲得的奈米碳管長線的場發 射笑端的透射電鏡照片。 圖5係本技術方案實施例的場發射電子源的製備方法 的流程示意圖。 圖6係本技術方案實施例的場發射電子源的製備裝置 示意圖。 Θ 係本技術方案實施例獲得的奈米碳管長線的場發 射尖端的拉曼光譜圖。 圖8係本技術方案實施例的場發射電子源的電流、電 壓曲線示意圖。 【主要元件符號說明】 場發射電子源 10 奈米碳管長線 12 導電基體 14 場發射尖端 16 電子發射源 20 轟擊處 121 17 200921739 奈米碳管長線第一端 122 奈米碳管長線第二端 124 奈米碳管 162 電子束 201 18File a patent application. However, it is only a preferred embodiment of the present invention to use the post, the +, and the earth. It is impossible to limit the fortune of the _m, the person m Μ (4). °Familiar with the skill of the case ^ ^ -ρ Φ ^ 仏 Decoration or change shall be within the scope of the following patent application. 16 200921739 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a schematic structural view of a field emission electron source according to an embodiment of the present technical solution. 'Q 2 is an enlarged schematic view of the electron-emitting end of the long carbon nanotube line in Figure 1. Fig. 3 is a scanning electron micrograph of the electron-emitting end of the long carbon nanotube tube obtained in the embodiment of the present invention. Fig. 4 is a transmission electron micrograph of the field emission terminal of the long carbon nanotube tube obtained in the embodiment of the present technical solution. FIG. 5 is a schematic flow chart of a method for preparing a field emission electron source according to an embodiment of the present technical solution. FIG. 6 is a schematic diagram of a device for preparing a field emission electron source according to an embodiment of the present technical solution.拉 A Raman spectrum of the field emission tip of the long carbon nanotube line obtained in the embodiment of the present technical solution. FIG. 8 is a schematic diagram showing current and voltage curves of a field emission electron source according to an embodiment of the present technical solution. [Main component symbol description] Field emission electron source 10 Nano carbon tube long line 12 Conductive substrate 14 Field emission tip 16 Electron emission source 20 Bombardment 121 17 200921739 Nano carbon tube long line first end 122 Carbon tube long line second end 124 carbon nanotubes 162 electron beam 201 18