200929624 六、發明說明： •【發明所屬之技術領域】 •本發明關於一種白色發光二極體晶片及其製造方法。 更詳細地，本發明關於一種製造在藍色發光二極體晶片内 部形成螢光體層而發出白色光的白色發光二極體晶片的製 造方法及由此製造的白色發光二極體晶片。 【先前技術】. 發光二極體元件是將電信號轉換為光信號的器件，若 ❹施加電信號，則發光二極體元件發出光。一般，發光二極 體元件是在包括電極引腳的引腳框安裝發光二極體晶片形 成。根據發光二極體晶片的種類，發光二極體元件發出發 光波長相當於藍色、紅色、綠色的光。 發光二極體元件具有優良的單色峰值波長，並具有光 . 效率優良且可小型化的優點，因此，發光二極體元件廣泛 使用於多種顯示裝置及光源。特別是，白色發光二極體元 件作為可取代照明裝置或顯示裝置的背光源的高功率及高 ❿ 效率的光源受注目。 作為實現這種白色發光二極體元件的方法，過去主要 使用在藍色發光二極體晶片的外部包敷螢光體而轉換為白 色光的方法。 作為一例，有形成覆蓋藍色發光二極體晶片的周圍及 上部的螢光體樹脂層而實現發出白色光的白色發光二極體 元件的方法。這時，螢光體樹脂層由混合YAG( Y-Al-Ga類） 螢光體和環氧樹脂或矽樹脂的螢光體形成。在由包圍藍色 3 94545 200929624 發光二極體晶片的注射反射板形成的空間中填充螢光體樹 脂層，從而可以形成覆蓋藍色發光二極體晶片的周圍及上 '部的螢光體樹脂層。由藍色發光二極體晶片發出的藍色光 中的一部分通過包含在樹脂層中的YAG螢光體被激發為峰 值波長為555nm的黃綠色光，該黃綠色光和由藍色發光二 極體晶片直接發出的藍色光被合成而發出希望的白色光。 但是，通過這種方式製造的白色發光二極體元件存在 具有低的量子效率及低的顯色指數的問題。並且，這種白 ® 色發光二極體元件具有顯色指數隨著電流密度變化的缺 點’而具有難以發出接近太暢光的白色光的缺點° 此外，這種過去的製造方法需要在發光二極體晶片的 上部包覆螢光體的製程，所以有製造成本上升的問題。 此外，根據過去的白色發光二極體元件製造方法，對 填充在注射反射板内部的樹脂的量、時間及黏度的變化敏 感，可能做出根據工作時的條件發出其他顏色的光的二極 〇體元件，降低製程的合格率。 另外，在藍色發光二極體晶片的上部形成螢光體層’ 從而具有白色發光二極體晶片的整體厚度增大的間題。 【發明内容】 本發明是為解決如上述的問題而做出的，本發明所要 解決的課題是：最大限度地利用藍色發光二極體晶片的效 率的同時，以簡單的製程提供一種具有高顯色指數的高效 率的白色發光二極體晶片及其製造方法。 本發明要實現的另一課題是：將藍色發光二極體晶片 94545 4 200929624 變換為發出白色光的二極體晶片，可以大幅減小應用該晶 片的白色發光二極體元件的厚度的白色發光二極體晶片及 其製造方法。 為實現上述課題的根據本發明的實施例的白色發光二 極體晶片製造方法包括：在包括絕緣體基板、形成在上述 絕緣體基板上的缓衝層、形成在上述缓衝層上的第1披覆 層、形成在上述第1披覆層上而使上述第1披覆層的上表 面中的一部分露出的活性層、形成在上述活性層上的第2 ® 披覆層、及分別形成在上述第2彼覆層和上述第1披覆層 的陽極電極和陰極電極的藍色發光二極體晶片中，除去上 述絕緣體基板的步驟；以及在上述缓衝層下和上述第2披 覆層上中的一個以上形成螢光體層的步驟。 在形成上述螢光體層的步驟中，僅在上述緩衝層下和 上述第2披覆層上中的某一個形成螢光體層，上述螢光體 層為紅色螢光體層或綠色榮光體層。 _ 根據本發明的實施例的白色發光二極體晶片製造方 法，還可以包括形成反射層的步驟。在上述缓衝層下形成 上述螢光體層時，上述反射層可以形成在上述螢光體層 下；在上述緩衝層下未形成上述螢光體層時，上述反射層 可以形成在上述缓衝層下。 形成上述螢光體層的步驟可以包括：在上述缓衝層下 形成第1螢光體層的步驟；及在上述第2坡覆層上中的除 上述陽極電極以外的部分形成第2螢光體層的步驟。 上述第1螢光體層和上述第2螢光體層中的任一個是 5 94545 200929624 紅色螢光體層，剩餘的一個是綠色螢光體層。 '根據本發明的另一實施例的白色發光二極體晶片製造 ' 方法，利用包括絕緣體基板、形成在上述絕緣體基板上的 缓衝層、形成在上述缓衝層上的第1坡覆層、形成在上述 第1彼覆層上而使上述弟1披覆層的上表面中的一部分露 出的活性層、形成在上述活性層上的第2披覆層、及分別 形成在上述第2披覆層和上述第1披覆層的陽極電極和陰 極電極的藍色發光二極體晶片製造白色發光二極體晶片。 ® 白色發光二極體晶片製造方法包括在上述絕緣體基板下和 上述第2披覆層上中的一個以上形成螢光體層的步驟。 在形成上述螢光體層的步驟中，僅在上述絕緣體基板 下和上述第2彼覆層上中的某一個形成螢光體層，上述螢 光體層為紅色螢光體層或綠色螢光體層。 根據本發明的實施例的白色發光二極體晶片製造方法 還可以包括形成反射層的步驟。在上述絕緣體基板下形成 ^ 上述螢光體層時，上述反射層形成在上述螢光體層下；在 上述絕緣體基板下未形成上述螢光體層時，上述反射層可 以形成在上述絕緣體基板下。 形成上述螢光體層的步驟可以包括：在上述絕緣體基 板下形成第1螢光體層的步驟；及在上述第2披覆層上中 的除上述陽極電極以外的部分形成第2螢光體層的步驟。 上述第1榮光體層和上述第2螢光體層中的任一個是 紅色螢光體層，剩餘的一個是綠色螢光體層。 上述紅色螢光體層由對CaA 1SiN3將銪用作活性劑的紅 6 94545 200929624 色激發螢光體形成，上述綠色螢光體層由對CaSc2〇4將鈽用 " 作活性劑的綠色激發螢光體或對BaSrSi〇4將銪用作活性劑 '的綠色激發螢光體形成。 根據本發明的另一實施例的白色發光二極體晶片製造 方法還可以包括在上述第1螢光體層下形成反射層的步 驟。 根據本發明的實施例的白色發光二極體晶片，可以通 過上述的根據本發明的實施例的白色發光二極體晶片製造 ® 方法中的任一種製造方法製造。 根據本發明的一實施例的白色發光二極體晶片包括藍 色發光二極體晶片和螢光體層。藍色發光二極體晶片包括 缓衝層、形成在上述緩衝層上的第1披覆層、形成在上述 第1披覆層上而使上述第1披覆層的上表面中的一部分露 出的活性層、形成在上述活性層上的第2披覆層、及分別 形成在上述第2披覆層和上述第1披覆層的陽極電極和陰 ^極電極。螢光體層形成在上述缓衝層下和上述第2披覆層 上中的一個以上。 上述螢光體層可以僅形成在上述緩衝層下和上述第2 披覆層上中的某一個；上述螢光體層可以是紅色螢光體層 或綠色螢光體層。 根據本發明的另一實施例的白色發光二極體晶片還可 以包括反射層。在上述緩衝層下形成上述螢光體層時，上 述反射層可以形成在上述螢光體層下；在上述緩衝層下未 形成上述螢光體層時，上述反射層可以形成在上述緩衝層 7 94545 200929624 下。 上述螢光體層可以包括：第丨螢光體層，形成在上述 缓衝層下丨及第2螢光體層，形成在上述第2披覆層上中 的除上述陽極電極以外的部分。 上述第1螢光體層和上述第2螢光體層中的任一個是 紅色螢光體層，剩餘的一個可以是綠色螢光體層。 根據本發明的另一實施例的白色發光二極體晶片包括 ❹藍色發光一極體晶片和螢光體層。藍色發光二極體晶片包 括絕緣體基板、形成在上述絕緣體基板上的緩衝層、形成 在上述緩衝層上的第1坡覆層、形成在上述第1披覆層上 而使上述第1披覆層的上表面中的一部分露出的活性層、 形成在上述活性層上的第2披覆層、及分別形成在上述第 2披覆層和上述第1披覆層的陽極電極和陰極電極。 螢光體層形成在上述絕緣體基板下和上述第2披覆層 上中的一個以上。 ❹ 上述螢光體層可以僅形成在上述絕緣體基板下和上 ，·上述螢光體層為紅色螢光體層 第2披覆層上中的某一個 或綠色螢光體層 根據本發明的實施例的白色發光二極體晶片還可以勹 、,、射層。在上述絕緣體基板下形成上述螢光體層時、匕 1反射層形成在上述螢光體層下；在上述絕緣體^被下上 形成上述榮光體層時，上述反射層形成在上述 未 下。 題基板 上述螢光體層可以包括：第〗螢光體層，形成在上求 200929624 絕緣體基板下；及第2螢光體層，形成在上述第2披覆層 _ 上中的除上述陽極電極以外的部分。 ’ 上述第1螢光體層和上述第2螢光體層中的任一個是 紅色螢光體層，剩餘的一個是綠色螢光體層。 上述紅色螢光體層由對CaAlSiN3將銪用作活性劑的紅 色激發螢光體形成，上述綠色螢光體層由對CaSc2〇4將鈽用 作活性劑的綠色激發螢光體或對BaSrS i 〇4將鋇用作活性劑 的綠色激發螢光體形成。 ® 根據本發明的再一實施例的白色發光二極體晶片還可 以包括形成在上述第1螢光體層下的反射層。 本發明的有益效果如下： 根據本發明，白色發光二極體晶片本身可以發出藍色 光子、紅色光子、及綠色光子的全部的、具有高顯色指數 的高亮度的白色光，並且可以具有使用過去的YAG類螢光 體做成的白色發光二極體元件不具備的90以上的高顯色 ❿指數。 另外，在晶片本身形成螢光體層，從而可以省略過去 在發光二極體晶片上配設螢光環氧樹脂的製程，可以削減 製造成本，並且可以減少製程投資費用。 【實施方式】 、 以下參照附圖詳細說明本發明的實施例。 在圖中，為了.清楚地表現各層及區域，放大厚度而表 示。在整個說明書，對類似的部分附加相同的附圖符號。 在說層或膜等的部分位於其他部分“上”或“下”時，這 9 94545 200929624 不僅包括就在其他部分“上”或“下”的情況，還包括在 其中間有其他部分的情況。相反，某個部分就在其他部分 “上”或“下”時’表示其中間沒有其他部分。 首先，參照圖1詳細說明根據本發明—實施例的白色 發光二極體晶片及其製造方法。 圖1疋根據本發明的一實施例的白色發光二極體晶片 的立體圖。 根據本發明的實施例的白色發光二極體晶片可以在過 ❹去的藍色發光二極體晶片的上端和下端中的任一個以上形 成螢光體層來實現。 第1圖所示的根據本發明的實施例的白色發光二極體 晶片包括去除位於過去的藍色發光二極體晶片的最下端的 絕緣體基板（第1圖未示出）之後分別形成在晶片的下端 •及上端的紅色螢光體層1171和綠色螢光體層1131。 首先，對用於根據本發明的實施例的白色發光二極體 Q 晶片的製造的過去的藍色發光二極體晶片進行說明。 藍色發光二極體晶片在其最下端包括絕緣體基板。絕 緣體基板可以甩如藍寶石（ai2〇3)的絕緣體形成。 在絕緣體基板上依次形成緩衝層115、第1披覆層 114、 活性層1137、1136、1135、1134、以及第2披覆層 1133、113。利用如 MOCVD (Metal Oxide Chemical Vapor Deposition:金屬氧化物化學氣相沈積）依次生長緩衝層 115、 第 1 披覆層 114、活性層 1137、1136、1135、1134、 以及第2披覆層1133、113之後，利用如反應離子蝕刻的 10 94545 200929624 方法蚀刻苐2披覆層1133、113和活性層Π37、1136、1135、 1134的預定的部分，從而可以做出如第】圖所示的形態的 層狀結構。例如，緩衝層115可以生長A1GaN類、GaN類、 或AlInN類形成，在圖中示出緩衝層115由三個層構成的 情況，但緩衝層115的數量不限於此。第1披覆層114可 以由摻雜矽（Si)的GaN類形成。活性層1137、1136、1135、 1134可以由GaN類或inGaN類的雙異質結構形成。第2披 覆層1133、113可以由摻雜鎂（啦）的AlGaN類和GaN類 ❹形成。 並且’陰極電極（N型電極）112和陽極電極（p型電 極）111分別形成在第1坡覆層114和第2披覆層1133、 113。陰極電極112形成在第1披覆層114的上表面中的露 出的部分’形成為與活性層1137、1136、1135、1134隔開。 另一方面’在圖中雖未圖示，藍色發光二極體晶片還 可以包括形成在第2披覆層113上的、用於在靜電放電中 φ 保護晶片的ESD( electrostatic discharge靜電放電）層。 這時，形成于藍色發光二極體晶片的上端的螢光體層（在 第1圖中用1131指示的層）可以形成在ESD層上，這時當 然也屬於本發明的保護範圍。 首先，如上所述’去除位於藍色發光二極體晶片的最 下的絕緣體基板（在第1圖中未圖不）。例如，絕緣體基 板可以通過研磨去除。通過去除絕緣體基板，露出位於其 上的緩衝層115的下表面。絕緣體基板的材質的特性上降 低光的亮度’但是，通過去除絕緣體基板，可以改善從白 11 94545 200929624 色發光二極體晶片發出的光的亮度。 披覆層 根據本發明的實施例，在緩衝層115下或第 1133、113上中的一個以上形成螢光體層。 紅色螢光體層1171形成在露出的緩衝層115的下表 面。紅色螢光體層1171可以級或練紅色激發榮 (CaAlSiNa : Eu)而形成。 ❹ 另外，綠色螢光體層1131形成在藍色發光二極體晶片 的上表面即第2披覆層1133、113的上表面。綠色螢二體 層1131可以蒸鍍或鍍敷綠色激發螢光體（CaSc2〇r Ce) '由此’如第1圖所示，實現在緩衝層115下形成紅色 螢光體層1171並在第2螢光體層1133、113形成綠色榮光 體層1131的白色發光二極體晶片。 另外，如第1圖所示，反射層118還可以形成在紅色 螢光體層1171下。反射層118可以蒸鍍如鋁那樣的可反射 光的任意的材料形成。通過設置反射層118，向下方前進 ❹的光向上方反射而可以改善發光二極體晶片的光效率。 在第1圖中’示出在緩衝層115下和第2披覆層U33、 113上均形成螢光體層1171、1131的情況，但是，可以省 略這兩個螢光體層1171、1131中的任意一個。此外，在第 1圖中’示出在緩衝層115下形成紅色螢光體層1171，在 第2披覆層1133、113上形成綠色螢光體層1131的情況， 但是也可以在緩衝層115下形成綠色螢光體層，在第2披 覆層1133、113上形成紅色螢光體層。 未在緩衝層115下形成螢光體層時，反射層118可以 12 94545 200929624 就在緩衝層115下形成。 下面，參照第2圖對本發明的另一實施例的白色發光 二極體晶片及其製造方法進行說明。 第2圖是根據本發明的另一實施例的白色發光二極體 晶片的立體圖。 根據本實施例的白色發光二極體晶片在未除去過去的 藍色發光二極體晶片的絕緣體基板的狀態下包括分別形成 在晶片下端及上端的紅色螢光體層1171和綠色螢光體層 ❹113卜 不同於參照第1圖說明的實施例，藍色發光二極體晶 片的絕緣體基板116未被去除的狀態下紅色螢光體層1171 形成在絕緣體基板116的下表面_ 另外’如第2圖所示，反射層ns還可以形成在紅色 螢光體層1171下。 在第2圖中，示出在絕緣體基板116下和第2坡覆層 〇 1133、Π3上均形成螢光體層ini、1131的情況，但是可 以省略這兩個螢光體層1171、1131中的任意一個。此外， 在第2圖中，示出在絕緣體基板116下形成紅色螢光體層 Π71 ’在第2披覆層1133、113上形成綠色螢光體層1131 的情況’但是’在本發明的再一實施例中，可以在絕緣體 基板116下形成綠色螢光體層，在第2披覆層1133、113 上形成紅色螢光體層。 在絕緣體基板116下未形成螢光體層時，反射層118 可以就在絕緣體基板116下形成。 13 94545 200929624 在上述的實施例中，紅色螢光體層1171可以由對 CaA 1S i N3將銪用作活性劑的紅色激發螢光體（CaA 1S i N3: Eu) ’形成，綠色螢光體層1131可以由對CaSc2〇4將鈽用作活性 劑的綠色激發螢光體（CaSc2〇4 : Ce)或對（BaSr) Si〇4將 銪用作活性劑的綠色激發螢光體（（BaSr) S i 〇4: Eu )形成。 根據本發明的實施例，活性層1137、1136、1135、1134 發出430至465nm波帶的藍色光子，該藍色光子通過紅色 螢光體層1171的同時，由紅色激發螢光體激發為620至 〇 650nm波帶的光譜峰值波長，該藍色光子通過綠色螢光體 層1131的同時，由綠色激發螢光體激發為500至580nm波 帶的波長。由此，同時發出紫色光（ 430至650nm波帶的 光）和藍綠色（cyan)光（430至580nm波帶的波長的光）， 發出整個可見光區域（ 400至800nm波長）。由此，根據本 發明的實施例，可以實現發出高顯色指數的高亮度的光的 白色發光二極體晶片。 @ 此外，僅形成紅色螢光體層和綠色螢光體層中的任意 一個時，可以實現發出紫色光（ 430至650nm波帶的波長 的光）和藍綠色光（430至580nm波帶的波長的光）中的 任意一個區域的可見光區域的白色發光二極體晶片。 以上，說明了本發明的實施例，但是本發明的權利要 求範圍不限於此，包括本發明所屬技術領域的普通技術人 員容易根據本發明的實施例變更而被認為等同的範圍的所 有變更及修改。 【圖式簡單說明】 14 94545 200929624 第1圖是根據本發明的實施例的白色發光二極體晶片 的立體圖。 第2圖是根據本發明的另一實施例的白色發光二極體 晶片的立體圖。 【主要元件符號說明】 111 _陽極電極 112 陰極電極 113、1133第2彼覆層 ❿1U 第1彼覆層 115 緩衝層 116 絕緣體基板 118 反射層 1131 綠色螢光體層 1134、1135、1136、1137 活性層 1171 紅色螢光體層 • . . ❹ 94545 15200929624 VI. Description of the Invention: • Technical Field to Which the Invention pertains • The present invention relates to a white light-emitting diode wafer and a method of manufacturing the same. More specifically, the present invention relates to a method of producing a white light-emitting diode wafer in which a phosphor layer is formed inside a blue light-emitting diode wafer to emit white light, and a white light-emitting diode wafer manufactured thereby. [Prior Art] A light-emitting diode element is a device that converts an electrical signal into an optical signal, and if an electrical signal is applied, the light-emitting diode element emits light. Generally, a light-emitting diode element is formed by mounting a light-emitting diode wafer on a lead frame including an electrode lead. Depending on the type of the light-emitting diode chip, the light-emitting diode element emits light having a wavelength corresponding to blue, red, and green. The light-emitting diode element has an excellent monochromatic peak wavelength and has the advantages of excellent efficiency and miniaturization. Therefore, the light-emitting diode element is widely used in various display devices and light sources. In particular, the white light-emitting diode element is attracting attention as a high-power and high-efficiency light source that can replace the backlight of a lighting device or a display device. As a method of realizing such a white light-emitting diode element, a method of converting a white light into a light-emitting body of a blue light-emitting diode wafer has been mainly used in the past. As an example, there is a method of forming a white light-emitting diode element that emits white light by covering a phosphor resin layer covering the periphery and the upper portion of the blue light-emitting diode wafer. At this time, the phosphor resin layer is formed of a phosphor in which a YAG (Y-Al-Ga-based) phosphor and an epoxy resin or an anthracene resin are mixed. The phosphor resin layer is filled in a space formed by the injection reflection plate surrounding the blue 3 94545 200929624 light-emitting diode wafer, so that the phosphor resin covering the periphery and the upper portion of the blue light-emitting diode wafer can be formed. Floor. A part of the blue light emitted from the blue light-emitting diode wafer is excited by the YAG phosphor contained in the resin layer to yellow-green light having a peak wavelength of 555 nm, and the yellow-green light and the blue light-emitting diode The blue light emitted directly from the wafer is combined to emit the desired white light. However, the white light-emitting diode element manufactured in this manner has a problem of low quantum efficiency and low color rendering index. Moreover, such white light-emitting diode elements have the disadvantage that the color rendering index changes with current density, and it has the disadvantage that it is difficult to emit white light that is close to too smooth. In addition, this past manufacturing method requires illumination in two. Since the upper portion of the polar body wafer is coated with the process of the phosphor, there is a problem that the manufacturing cost increases. Further, according to the conventional method for manufacturing a white light-emitting diode element, it is sensitive to changes in the amount, time, and viscosity of the resin filled inside the injection reflection plate, and it is possible to make a diode which emits light of other colors according to the conditions at the time of operation. Body components, reducing the pass rate of the process. Further, the phosphor layer ' is formed on the upper portion of the blue light-emitting diode wafer to have an increase in the overall thickness of the white light-emitting diode wafer. SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and the problem to be solved by the present invention is to provide a high efficiency in a simple process while maximizing the efficiency of a blue light-emitting diode wafer. A highly efficient white light-emitting diode wafer having a color rendering index and a method of manufacturing the same. Another object to be solved by the present invention is to convert a blue light-emitting diode wafer 94545 4 200929624 into a white light-emitting diode wafer, which can greatly reduce the thickness of the white light-emitting diode element to which the wafer is applied. Light-emitting diode wafer and method of manufacturing the same. A method of manufacturing a white light-emitting diode wafer according to an embodiment of the present invention for achieving the above object includes: including an insulator substrate, a buffer layer formed on the insulator substrate, and a first cladding formed on the buffer layer a layer, an active layer formed on the first cladding layer and exposing a part of an upper surface of the first cladding layer, a second ® coating layer formed on the active layer, and each of the layers a step of removing the insulator substrate in the blue light-emitting diode wafer of the anode layer and the cathode electrode of the first cladding layer; and the buffer layer and the second cladding layer One or more steps of forming a phosphor layer. In the step of forming the phosphor layer, a phosphor layer is formed only on one of the buffer layer and the second cladding layer, and the phosphor layer is a red phosphor layer or a green glotex layer. The white light emitting diode wafer manufacturing method according to an embodiment of the present invention may further include a step of forming a reflective layer. When the phosphor layer is formed under the buffer layer, the reflective layer may be formed under the phosphor layer; and when the phosphor layer is not formed under the buffer layer, the reflective layer may be formed under the buffer layer. The step of forming the phosphor layer may include: forming a first phosphor layer under the buffer layer; and forming a second phosphor layer on a portion other than the anode electrode on the second slope layer step. One of the first phosphor layer and the second phosphor layer is a 5 94545 200929624 red phosphor layer, and the remaining one is a green phosphor layer. A method of manufacturing a white light-emitting diode wafer according to another embodiment of the present invention, comprising: using an insulator substrate, a buffer layer formed on the insulator substrate, a first slope layer formed on the buffer layer, An active layer formed on the first cladding layer to expose a part of the upper surface of the first cladding layer, a second cladding layer formed on the active layer, and the second cladding layer formed on the first cladding layer A blue light-emitting diode wafer of the layer and the anode electrode and the cathode electrode of the first cladding layer was fabricated to produce a white light-emitting diode wafer. The method of manufacturing a white light-emitting diode wafer includes the step of forming a phosphor layer under one or more of the insulator substrate and the second cladding layer. In the step of forming the phosphor layer, a phosphor layer is formed only on one of the insulator substrate and the second cladding layer, and the phosphor layer is a red phosphor layer or a green phosphor layer. The white light emitting diode wafer manufacturing method according to an embodiment of the present invention may further include a step of forming a reflective layer. When the phosphor layer is formed under the insulator substrate, the reflective layer is formed under the phosphor layer; and when the phosphor layer is not formed under the insulator substrate, the reflective layer may be formed under the insulator substrate. The step of forming the phosphor layer may include a step of forming a first phosphor layer under the insulator substrate, and a step of forming a second phosphor layer on a portion other than the anode electrode of the second cladding layer . One of the first luminescent layer and the second phosphor layer is a red phosphor layer, and the remaining one is a green phosphor layer. The red phosphor layer is formed by a red 6 94545 200929624 color-excited phosphor that uses lanthanum as an active agent for CaA 1SiN3, and the green phosphor layer is activated by green excitation of CaSc2〇4 as an active agent. The body or the green-excited phosphor of BaSrSi〇4 uses ruthenium as the active agent'. The white light emitting diode wafer manufacturing method according to another embodiment of the present invention may further include the step of forming a reflective layer under the first phosphor layer. The white light emitting diode wafer according to the embodiment of the present invention can be manufactured by any of the above-described white light emitting diode wafer manufacturing ® methods according to the embodiments of the present invention. A white light emitting diode wafer according to an embodiment of the present invention includes a blue light emitting diode wafer and a phosphor layer. The blue light-emitting diode wafer includes a buffer layer, a first cladding layer formed on the buffer layer, and a first cladding layer formed on the first cladding layer to expose a part of an upper surface of the first cladding layer An active layer, a second cladding layer formed on the active layer, and anode electrodes and cathode electrodes respectively formed on the second cladding layer and the first cladding layer. The phosphor layer is formed on one or more of the buffer layer and the second cladding layer. The phosphor layer may be formed only under one of the buffer layer and the second cladding layer; the phosphor layer may be a red phosphor layer or a green phosphor layer. The white light emitting diode wafer according to another embodiment of the present invention may further include a reflective layer. When the phosphor layer is formed under the buffer layer, the reflective layer may be formed under the phosphor layer; and when the phosphor layer is not formed under the buffer layer, the reflective layer may be formed under the buffer layer 7 94545 200929624 . The phosphor layer may include a second phosphor layer formed on the buffer layer and the second phosphor layer, and formed on the second cladding layer except for the anode electrode. One of the first phosphor layer and the second phosphor layer is a red phosphor layer, and the remaining one may be a green phosphor layer. A white light emitting diode wafer according to another embodiment of the present invention includes a cyan blue light emitting body wafer and a phosphor layer. The blue light-emitting diode wafer includes an insulator substrate, a buffer layer formed on the insulator substrate, a first slope layer formed on the buffer layer, and the first cladding layer to form the first cladding layer An active layer partially exposed on the upper surface of the layer, a second cladding layer formed on the active layer, and anode electrodes and cathode electrodes respectively formed on the second cladding layer and the first cladding layer. The phosphor layer is formed on one or more of the insulator substrate and the second cladding layer. ❹ The phosphor layer may be formed only under and on the insulator substrate, and the phosphor layer may be one of a red phosphor layer second coating layer or a green phosphor layer. The white light emitting according to an embodiment of the present invention The diode chip can also be enamel, and the shot layer. When the phosphor layer is formed under the insulator substrate, the 匕1 reflection layer is formed under the phosphor layer; and when the refractory layer is formed under the insulator, the reflection layer is formed. The phosphor layer of the substrate may include: a phosphor layer formed under the insulator substrate of 200929624; and a second phosphor layer formed on the second cladding layer except the anode electrode . Any one of the first phosphor layer and the second phosphor layer is a red phosphor layer, and the remaining one is a green phosphor layer. The red phosphor layer is formed of a red-excited phosphor that uses ruthenium as an active agent for CaAlSiN3, which is a green-excited phosphor that uses ruthenium as an active agent for CaSc2〇4 or for BaSrS i 〇4 A green excitation phosphor that uses hydrazine as an active agent is formed. The white light emitting diode wafer according to still another embodiment of the present invention may further include a reflective layer formed under the first phosphor layer. The beneficial effects of the present invention are as follows: According to the present invention, the white light-emitting diode wafer itself can emit all of blue light, red photons, and green photons, high-brightness white light having a high color rendering index, and can be used. A high color rendering index of 90 or more that is not provided by a white light-emitting diode element made of a conventional YAG-based phosphor. Further, since the phosphor layer is formed on the wafer itself, the process of arranging the fluorescent epoxy resin on the light-emitting diode wafer in the past can be omitted, the manufacturing cost can be reduced, and the process investment cost can be reduced. [Embodiment] Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings. In the figure, in order to clearly express each layer and region, the thickness is expressed. Throughout the specification, the same reference numerals are attached to the similar parts. When a portion such as a layer or film is located "on" or "down" in other parts, this 9 94545 200929624 includes not only the case of "up" or "below" in other parts, but also the case where there are other parts in between. . Conversely, when a part is "up" or "down" in other parts, it means that there is no other part in between. First, a white light-emitting diode wafer and a method of manufacturing the same according to embodiments of the present invention will be described in detail with reference to FIG. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a perspective view of a white light emitting diode wafer in accordance with an embodiment of the present invention. The white light emitting diode wafer according to the embodiment of the present invention can be realized by forming a phosphor layer at any one of the upper end and the lower end of the oversized blue light emitting diode wafer. The white light-emitting diode wafer according to the embodiment of the present invention shown in FIG. 1 includes the insulating substrate (not shown in the first drawing) at the lowermost end of the blue light-emitting diode wafer in the past, and is formed on the wafer, respectively. The lower end and the upper red phosphor layer 1171 and the green phosphor layer 1131. First, a conventional blue light-emitting diode wafer for use in the fabrication of a white light-emitting diode Q wafer according to an embodiment of the present invention will be described. The blue light emitting diode chip includes an insulator substrate at its lowermost end. The insulator substrate may be formed of an insulator such as sapphire (ai2〇3). The buffer layer 115, the first cladding layer 114, the active layers 1137, 1136, 1135, and 1134, and the second cladding layers 1133 and 113 are sequentially formed on the insulator substrate. The buffer layer 115, the first cladding layer 114, the active layers 1137, 1136, 1135, 1134, and the second cladding layers 1133, 113 are sequentially grown by, for example, MOCVD (Metal Oxide Chemical Vapor Deposition). Thereafter, a predetermined portion of the 披2 cladding layers 1133, 113 and the active layer Π37, 1136, 1135, 1134 is etched by a method such as reactive ion etching 10 94545 200929624, whereby a layer of the morphology as shown in the first figure can be made. Structure. For example, the buffer layer 115 may be formed by growing A1GaN-based, GaN-based, or AlInN-type, and the case where the buffer layer 115 is composed of three layers is illustrated in the drawing, but the number of the buffer layers 115 is not limited thereto. The first cladding layer 114 may be formed of GaN doped with bismuth (Si). The active layers 1137, 1136, 1135, 1134 may be formed of a double heterostructure of a GaN-based or inGaN-based structure. The second cladding layers 1133, 113 may be formed of magnesium-doped AlGaN-based and GaN-based germanium. Further, a cathode electrode (N-type electrode) 112 and an anode electrode (p-type electrode) 111 are formed on the first slope layer 114 and the second cladding layers 1133 and 113, respectively. The exposed portion ' of the cathode electrode 112 formed on the upper surface of the first cladding layer 114 is formed to be spaced apart from the active layers 1137, 1136, 1135, and 1134. On the other hand, although not shown in the drawings, the blue light-emitting diode wafer may further include an ESD (electrostatic discharge) formed on the second cladding layer 113 for protecting the wafer during electrostatic discharge. Floor. At this time, the phosphor layer (the layer indicated by 1131 in Fig. 1) formed on the upper end of the blue light-emitting diode wafer can be formed on the ESD layer, and it is of course also within the scope of the present invention. First, as described above, the lowermost insulator substrate (not shown in Fig. 1) of the blue light-emitting diode wafer is removed. For example, the insulator substrate can be removed by grinding. The lower surface of the buffer layer 115 located thereon is exposed by removing the insulator substrate. The material of the insulator substrate is characterized by a decrease in the brightness of light. However, by removing the insulator substrate, the brightness of light emitted from the white light-emitting diode wafer can be improved. Coating Layer According to an embodiment of the present invention, a phosphor layer is formed under the buffer layer 115 or at least one of the first and third portions 133, 113. A red phosphor layer 1171 is formed on the lower surface of the exposed buffer layer 115. The red phosphor layer 1171 can be formed by level or red excitation (CaAlSiNa: Eu). Further, the green phosphor layer 1131 is formed on the upper surface of the second cladding layers 1133 and 113 which are the upper surfaces of the blue light-emitting diode wafer. The green fluorescent body layer 1131 can be vapor-deposited or plated with a green excitation phosphor (CaSc2〇r Ce). Thus, as shown in FIG. 1, the red phosphor layer 1171 is formed under the buffer layer 115 and is in the second firefly. The photo body layers 1133, 113 form a white light emitting diode chip of the green glovo body layer 1131. Further, as shown in Fig. 1, the reflective layer 118 may be formed under the red phosphor layer 1171. The reflective layer 118 may be formed by vapor-depositing any material that reflects light such as aluminum. By providing the reflective layer 118, the light traveling downward is reflected upward, and the light efficiency of the light-emitting diode wafer can be improved. In the first drawing, the case where the phosphor layers 1171 and 1131 are formed under the buffer layer 115 and the second cladding layers U33 and 113 is shown. However, any of the two phosphor layers 1171 and 1131 may be omitted. One. In addition, in the first figure, 'the red phosphor layer 1171 is formed under the buffer layer 115, and the green phosphor layer 1131 is formed on the second cladding layers 1133 and 113, but it may be formed under the buffer layer 115. The green phosphor layer forms a red phosphor layer on the second cladding layers 1133 and 113. When the phosphor layer is not formed under the buffer layer 115, the reflective layer 118 may be formed under the buffer layer 115 by 12 94545 200929624. Next, a white light-emitting diode wafer according to another embodiment of the present invention and a method of manufacturing the same will be described with reference to Fig. 2 . Fig. 2 is a perspective view of a white light emitting diode wafer in accordance with another embodiment of the present invention. The white light-emitting diode wafer according to the present embodiment includes red phosphor layers 1171 and green phosphor layers 113 formed at the lower end and the upper end of the wafer, respectively, in a state where the insulator substrate of the past blue light-emitting diode wafer is not removed. Unlike the embodiment described with reference to FIG. 1, the red phosphor layer 1171 is formed on the lower surface of the insulator substrate 116 in a state where the insulator substrate 116 of the blue light-emitting diode wafer is not removed_in addition, as shown in FIG. The reflective layer ns may also be formed under the red phosphor layer 1171. In the second drawing, the phosphor layers ini and 1131 are formed under the insulator substrate 116 and the second slope layer 1331133 and Π3. However, any of the two phosphor layers 1171 and 1131 may be omitted. One. In addition, in the second figure, the case where the red phosphor layer Π 71 ' is formed under the insulator substrate 116 to form the green phosphor layer 1131 on the second cladding layers 1133 and 113 is shown, but in yet another embodiment of the present invention In the example, a green phosphor layer may be formed under the insulator substrate 116, and a red phosphor layer may be formed on the second cladding layers 1133 and 113. When the phosphor layer is not formed under the insulator substrate 116, the reflective layer 118 may be formed under the insulator substrate 116. 13 94545 200929624 In the above embodiment, the red phosphor layer 1171 may be formed of a red-excited phosphor (CaA 1S i N3: Eu) ' which is used as an active agent for CaA 1S i N3, and the green phosphor layer 1131 A green-excited phosphor ((BaSr) S which can be used as an active agent by a green-excited phosphor (CaSc2〇4: Ce) or a pair of (BaSr) Si〇4 which uses cesium as an active agent for CaSc2〇4 i 〇 4: Eu ) is formed. According to an embodiment of the invention, the active layers 1137, 1136, 1135, 1134 emit blue photons of 430 to 465 nm band, which pass through the red phosphor layer 1171 while being excited by the red excitation phosphor to 620 to The spectral peak wavelength of the 〇650 nm band, which passes through the green phosphor layer 1131 and is excited by the green excitation phosphor to a wavelength of 500 to 580 nm. Thereby, purple light (light of 430 to 650 nm band) and cyan light (light of wavelength of 430 to 580 nm band) are simultaneously emitted, and the entire visible light region (wavelength of 400 to 800 nm) is emitted. Thus, according to an embodiment of the present invention, a white light-emitting diode wafer emitting high-intensity light with a high color rendering index can be realized. @ In addition, when only one of the red phosphor layer and the green phosphor layer is formed, it is possible to emit light of purple light (wavelength of a wavelength of 430 to 650 nm band) and blue-green light (wavelength of a band of 430 to 580 nm) a white light-emitting diode wafer in the visible light region of any one of the regions. The embodiments of the present invention have been described above, but the scope of the claims of the present invention is not limited thereto, and all changes and modifications of the scopes which are considered to be equivalent to those of ordinary skill in the art . BRIEF DESCRIPTION OF THE DRAWINGS 14 94545 200929624 Fig. 1 is a perspective view of a white light emitting diode wafer according to an embodiment of the present invention. Fig. 2 is a perspective view of a white light emitting diode wafer in accordance with another embodiment of the present invention. [Description of main component symbols] 111 _ anode electrode 112 cathode electrode 113, 1133 second cladding layer U 1U first cladding layer 115 buffer layer 116 insulator substrate 118 reflective layer 1131 green phosphor layer 1134, 1135, 1136, 1137 active layer 1171 Red phosphor layer • . . ❹ 94545 15