TW200929358A - Method of manufacturing semiconductor device, apparatus for manufacturing semiconductor device, control program, and program storage medium - Google Patents

Abstract

To provide a method of manufacturing a semiconductor device, an apparatus for manufacturing a semiconductor device, a control program and a program storage medium, which are capable of simplifying the manufacturing process, reducing manufacturing costs and improving productivity in comparison with conventional methods. A manufacturing method including a deposition step in which an SiO2 film 104 is deposited on a pattern of a photoresist 103, an etching step in which the SiO2 film 104 is etched so as to remain only on the side walls of the pattern composed of the photoresist 103, and a step in which the pattern composed of the photoresist 103 is removed, thereby forming a pattern composed of the SiO2 film 104.

Description

200929358 IX. Description of the Invention: [Technical Field of the Invention] [0001] The present invention relates to a method for manufacturing a semiconductor device, a device for abundance, a device for (4) a circuit of a New Zealand, a system of a silk thread 1, a photoresist The i-th pattern creates a semi-conducting layer by making a layer of shadow on the substrate. wNove code both & pattern, [previous technique] © [0002] Since the past, in the semiconductor device and other processes, the semiconductor plasma side and the like are processed to form a fine circuit. The miniaturization of the formed pattern has been developed with = technology. Among them is the so-called double patterning. This double pattern line is formed by a side mask having a finer interval between the first mask forming step and the side mask (see, for example, Patent Document i [0004], using, for example, Si〇2 A film or a butterfly film or the like is used as a film, and a mask is formed on both side wall portions in the pattern, and the film is used. (4) Turning to 'S1de waH transfer' * The photoresist film can be exposed and developed to lightly. In this way, first use light

糸Ϊ 糸Ϊ 余 , , , 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾 顾N4M 200929358 [0005] In the middle of Zhejiang and f, it is necessary to form a film at a lower temperature. The method of forming a film at a low temperature is known as a method of activating the chemical vapor deposition of a film forming gas by heating a contact medium (refer to, for example, a patent). [2] [2] [Japanese Patent Laid-Open No. 2007- 027742] [Patent Document 2] Japanese Patent Laid-Open Publication No. Hei. No. Hei. The translation of the solution [0006] This increase, the production of f-number of steps is more 'step complication' is made into a genius and touch _ become the cause of the cumbersome steps. The invention hopes to provide Semiconductor device = can be compared to the simple steps: to control the book = ❹ & · & lotus method [0008] Patent application range 1 - silk alpha resist film exposure, development of the photoresist + a manufacturing method of guiding = placing a substrate in accordance with a predetermined pattern to fabricate a semiconductor device 1 pattern The film forming step of the etched layer is characterized in that the photoreceptor f is characterized by the following steps: _step, 働m Si〇2 film is used to form a film; side wall portion; and The second pattern forming step of the first pattern remaining in the photoresist is performed, and the second pattern is removed. The first pattern of the first resist is formed to form the second film [0009] 200929358 Γ ίί利 f中围 = please The semiconductor device of the first aspect of the patent is deposited to carry out the film formation and the chemical vapor phase of the gasification of the fine gas [0010] device: is; the semiconductor case of the first or second item and the lower layer of the photoresist The second pattern of any one of the first to third aspects of the patent range is the stone of the mask, after the pattern forming step, the layer of the enamel layer, the tantalum nitride layer or the oxygen nitrogen of the [0012] layer The semiconductor layer of the device is in the first step or the second aspect of the invention. The second step includes the following steps: after the second pattern forming step, the anti-reflection film composed of the inorganic material of the lower layer is ί^ί^ , and the organic film of the lower layer of the anti-reflection film composed of the machine material 4. The system is made of the semiconductor device of the fifth item of the patent application scope.

« ^ 8ρώ 〇η #'TS〇G

Oxide) film, coffee film ^ -. (Low (four) compound' LGW has a clearer than the [0014] patent application scope item 7 is a semiconductor f詈 production side layer into a certain difficult to manufacture turn "set ^ characteristics in 匕

Hit step ^ forms a plurality of linear first patterns formed by photoresist; ί, t film step 'forms SiOW on the first pattern; pattern 壁 etch steps to make the Si 〇 2 film Remaining only in the first 7 200929358 pattern of the photoresist; forming a layer; a second pattern forming step of removing the second pattern to form the second etching step, wherein the second pattern is the first layer of the mask etching lower layer a second pattern forming step of the second mask structure of the second layer, a third pattern formed by a plurality of linear patterns perpendicular to the pattern, and a second film forming step for forming a photoresist, the third film forming step The film is formed on the pattern. In the third step, the Si〇2 film is left to be left only in the wall portion; the third pattern side case is formed; and the fourth pattern forming step is to remove the third sheet _ In the fourth fourth step of forming the ridge film, the fourth pattern and the second mask of the first lower layer form a layer; and the early layer is a mask 'the fifth side step' to form the layer with the ith mask With the mask, a hole is formed in the layer of the surname. The % composition layer is [0015]. The eighth item of the patent application scope is φ, please fill in the formula, and the manufacturing method, wherein the i-th and second film-forming steps are performed by the chemical gas activated by the addition of the film forming gas. Phase deposition proceeds. ', , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The anti-reflection film composed of the pattern is mixed; and the organic material is trimmed and the anti-reflection film formed by the side-cutting is trimmed before the second film forming step. < </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; ^Composed of the layer system (4), [0018] U Mei please the eleventh item - the side layer of the semiconductor device is formed into the established "the case to create a transfer," the remaining base processing chamber, with money _ The substrate device includes a body supply mechanism for supplying a processing gas into the processing chamber. The manufacturing method of the semiconductor device of any one of the items is called 'Patent Enclosure No. 1 to [0019]: The twelfth item of the patent scope is a control program characterized in that the manufacturing device of the semiconductor device is controlled during execution, such as ΐίΐί Move 1G (4) Ren - slave material set ^ = Fan action memory miscellaneous 'memory has been manufactured on the computer 4 to? (4) program execution control money conductor device conductor towel please patent van (four) 1 to 1G shot - half of the item [0021 Manufacture method of manufacturing semiconductor device, simplification and manufacture of semiconductor device, "this skill"; ίί she can realize the steps simplification [embodiment] 13⁄43⁄4 i: good shape energy [0022] The following is a reference to the present invention - Embodiments 200929358 [0023] Fig. 1 is a view showing a portion of a semiconductor wafer according to an embodiment of the present invention, which is enlarged, showing step g of the semiconductor device manufacturing method according to the first embodiment. As shown in the first embodiment, an anti-reflection film (BARC) 102 made of an organic material is formed on the polycrystalline layer ιοί which is a patterned layer of the remaining layer. A photoresist 1 〇 3 is formed on the (BARC) 102. The photoresist 103 is patterned by exposure and development steps, and has a pattern of a predetermined shape. Further, in Fig. 1, it is shown that the ruthenium is provided on the polysilicon layer. 1 base layer on the lower side. [0024] - 曰

Fig. 1(b) shows a state in which the above-mentioned photoresist 1〇3 is trimmed to make the line width thin and the anti-reflection film (BARC) 102 is etched. The step of trimming the photoresist 1 〇 3 and the step of etching the anti-reflective film (BARC) 102 can be carried out by using an electric power such as oxygen plasma. Next, the Si〇2 film 104 is formed into a film as shown in Fig. 1(c). In this film forming step, f is formed on the photoresist 103, and the photoresist 103 is usually thrown down when exposed to a high temperature, and is not resistant to high temperatures, so it is preferable to form a film at a low temperature (e.g., about 30 CTC or less). This can be carried out by chemical vapor deposition of a film-forming gas by heating the contact medium. As shown in Fig. 1 (d), the "Si 2 film 104 is formed, and the Si 2 film 104 is in a state of only the side wall portion of the pattern of the photoresist 103. For the etching, for example, CF4, a mixed gas of a CF-based gas such as 'CHsF, CH2F2, and a gas such as &amp; gas, and a gas to be added to the mixed gas may be used. As shown in Fig. 1(e), the pattern formed by the SiO2 film 104 remaining on the side wall portion is removed by ashing or the like using oxygen plasma. 200929358 Cover, money engraved Si〇2 film 104 caused by the pattern is obscured. ^Day. For this etching, for example, HBr gas or the like can be used. [0029] In the first embodiment, the SWT method can be used to form a thin pattern without using a smear film. And in the way Φ _ 邱 士 弘 弘 丨 丨 丨 丨 丨 歹 歹 歹 歹 歹 歹 歹 歹 歹 歹 歹 歹 不 不 不 不 ' ' ' 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱 钱❹ ❹ 4, 上上' is shown in Figure 1 (C) and by chemical vapor deposition by heating the medium, knowing the film forming gas, the upper electrode of the film is about 35nm thick and In the lower part, the device for high-frequency power is used for electric water engraving. When the following ship parts are on the side of each step, it can be seen that the stone layer 101 (thickness about 100 nm (the base layer is an oxide film)) is a good shape. Day 丄 丄 103 103, anti-and film 102 surname Xuan, | 0 Etching gas: 02 (374sccm) Pressure: 13.3Pa (lOOmTorr) Power: 600W (upper) / 30W (lower) Remote 丄 iiljSiO, film 104 The button is corrected for gas. AJ/C4F8 (500sccm/20sccm) Pressure: 5.3Pa (40mTorr) Power: 600W (upper) / 100W (lower)

• SXI1I polycrystalline germanium layer 101 饨 丨 1丨 main eclipse! T Name engraved gas: HBr / 〇 2 (400sccm / 2sccm) Pressure: 4.0Pa (30mTorr) Power: 200W (upper) / 150W (lower)丨 gas: HBr/02 (934sccm/4sccm) 11 200929358 Pressure · 20.0Pa (15〇mTorr) Power: 650W (upper) / 2〇〇w (lower) [0031] Figure 2 shows the first in the above In the embodiment, another film is formed between the polysilicon layer 1〇1 and the antireflection film (BARC) 102, for example, the second semiconductor device of the film 12 is fabricated. In the case of the second embodiment, the steps of Figs. 2(a) to (e) are performed in the same manner as in the case of the i-th embodiment shown in Fig. 2 . Further, the pattern formed by the Si〇2 film 104 is used as a mask, and the film of the lower layer is 12 〇 (the sN4 film 120 or the like is used as a mask to etch the polysilicon layer 1〇1 (g). 2, the SiON film can be replaced with a SiON film, and the SiON film can be replaced with a SiN film. FIG. 3 shows the steps of the method for fabricating the semiconductor device according to the third embodiment. In the form, for example, an oxide film, a nitride film, or a polycrystal is formed, and an organic film is formed on the etched layer 131 for the purpose of patterning, and an SOG film (or LT0 film) 133 is formed as an anti-reflection composed of an inorganic material. The film is 134 on the s〇G film (or LT film) 133. Light (4) 4 series by exposure, development step _ = shape of the pattern.芍 有 有 有 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 【 The step of the photoresist 134 can be performed by, for example, using oxygen electropolymerization or the like. ^: The trimming step should be performed, and the filament 134 is wide. [0034] For the 2, the film of the (10) 2 film 135 is formed. In the film forming step, i forms a film as described above, preferably at a low temperature (for example, about 30 (). 成 行 filming' can be catalyzed by chemical vapor deposition to activate a film forming gas by heating the contact medium ^ 12 [0035] 200929358 Next, as shown in FIG. 3(d), the Si〇2 film 135 is etched, and the Si〇2 film 135 remains only in the sidewall portion of the pattern of the photoresist 134. For this etching, for example, CF4, c4F8, CHF3, CH can be used. #, CH#2, etc., a mixture of a CF-based gas and an Ar gas, or a gas to be added with oxygen in the mixed gas, etc. [0036] Next, as shown in Fig. 3(e), by using oxygen gas The ashing of the slurry, etc., removes the pattern of the resist 134, and forms a pattern of the 〇2 film 135 remaining on the side wall portion. [0037] Thereafter, as shown in FIG. 3(f), the Si〇2 film is used. The pattern created by 135 is a germanium mask, and the lower layer of the S0G film is etched, and as shown in FIG. 3(^), the organic film 132 of the lower layer is shown. Further, the patterned organic film 132 is interposed. The mask is etched to the lower layer of the surname layer 131. In this case, the mask layer 131 may be a film made of an inorganic material such as an oxide film or a nitride film, in addition to polysilicon or the like. The etching of the S film (3 film (or LT film) 133 can be performed using a mixed gas of the CF-based gas or the like, and the etching of the organic film 132 can be performed using a gas such as oxygen or nitrogen. [0038] FIG. 4 shows that it is not formed. In the third embodiment, the s〇G film (or LTO film) 133 is replaced by the SiO film 140 as the semiconductor device of the fourth embodiment of the antireflection film. The fourth embodiment is as shown in Fig. 3. In the case of the third embodiment of the bear, the steps of (a) to (g) of FIG. 3 are the same, and the steps of FIG. 4 (a) are performed. [0039] Next, the fifth embodiment will be described with reference to FIGS. As shown in Fig. 6(a), in the fifth embodiment, a tantalum nitride layer as a second mask layer is formed on the tantalum layer 500 of the surnamed layer which is intended to be patterned. 5〇1. On the nitridation=layer 501, 'the amorphous germanium layer 5〇2 as the first mask layer is formed. The amorphous germanium=02 may also be a polycrystalline layer. On the 〇 layer 5〇2, an anti-reflection film (BARC) 503 composed of an organic material is formed. Further, a photoresist 504 is formed on the anti-reflection film (BARC) 5〇3. It is patterned by exposure and development steps, and 13 200929358 has a predetermined pattern of a plurality of lines (the first round case). The linear width (line width) of the photoresist 5〇4 is 6—the line between the lines and the line The interval is -m, etc. Fig. 6(8) shows the step of trimming the above-mentioned photoresist 5〇4 to make the line width thinner (for example, the last name and the resistance of the film (BARC) 503. The step of trimming and butterflying the photoresist is performed. The first film formation step of the film on the photoresist 5〇4 can be carried out by using, for example, oxygen electropolymerization [0041] Next, as shown in Fig. 6(c). This film forming step is performed in the above-described embodiment, "the film 3 is in contact with the chemical vapor deposition of the film forming gas, and the second step is performed as shown in Fig. 6 (d), and the second etching step is performed; Gas: equal to the age of the gas or the required addition "combined == [0043] Next 'to the second pattern forming step, such as # ❹ oxygen «ashing, etc. remove the photoresist 5 () 4 = (^不不' The pattern (second pattern) caused by the use of film milk is taken into the case, and the pattern created by the film 5〇5 is a mask, and the engraving step 'this _,=】 can be used, for example. The 〇 夕 〇 〇 〇 藉 藉 藉 藉 藉 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 骑 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 藉 〇 〇 〇 〇 〇 〇 〇 〇 〇 〇 Further, Fig. 6 (7) is a state in which the monolithic layer 501 is exposed in Fig. 7 . A section of the A section where the early chain is not visible. 14 200929358 Next, a third pattern forming step is performed, and as shown in FIG. 8 (f), as shown in FIGS. 8(B1) and (C1), an anti-reflection film (BARC) 513 is formed and formed thereon. A photoresist 514 (third pattern) patterned by a coating, exposure, and development step. The photoresist 514 is a linear pattern in a direction perpendicular to the linear amorphous germanium layer 502 shown in FIG. 7, for example, the width (line width) of the line is 6 〇 nm, and the interval between the lines is 6 〇. The pattern of nm is composed. Further, on the left side of Fig. 8, a cross section B of the plan view shown in Fig. 9 which will be described later is shown on the right side of Fig. 8 to show a c-section. [0046] 、, FIG. 8 (B2), (C2) show that the photoresist 514 is trimmed to make the line width thin (for example, 30 nm), and the etching anti-reflective film (BARC) 513 is resistant to 5M trimming and anti-reflection 貘 ( C) The side of 513 is = etched with a plasma such as oxygen plasma. Next, the second film forming step is carried out, and as shown in Figs. 8 (B3) and (C3), the pre-service vestiges are used, and the age is controlled by chemical vapor deposition such as heating the contact medium to activate the film forming gas. [0048] (10) The film is subjected to an engraving step, as shown in Figs. 8 (Β4) and (10), and the button (4) τ 田 〇 〇 2 film 515 remains only in the side wall portion of the pattern of the photoresist 514. This etching may use a mixed gas such as CF 4 such as CF 4 , c 4 F 8 , chf 3 , CH 3 F , CH 2 F 2 or the like, or add oxygen as needed in the mixed gas. [0049] Next, the fourth pattern forming step = two ^ = case, shape = Second borrowing 15 [0050] 200929358 Next, proceed to the fourth step, as shown in Figure 8 (β _ . Membrane 5 〗 5 and the amorphous cut), the Si〇2 tantalum nitride layer 5G1 rhyme can be This is carried out using, for example, a gas such as a scalar layer 50 gas jet. In the recording state, if oxygen is mixed on the semiconductor wafer, it is formed in a line shape (10). FIG. 9 shows a region in which the rectangular shape is formed between the two lines 515 of the line. State. Surrounded by a non-daily layer 5G2, it is a moment [0051] ❹ Next, the fifth etching step is performed, as shown in Fig. 1 去, the crystallization layer 502 and the nitrite 501 horn rabbit are said to be red (a) ^ except 8102 film 515 and non-bull Steps, the last time t 曰 曰 5 〇 1 for the mask 'money engraved oxidized stone layer 500. With the above i, the surface of the Shixi wafer w is exposed to the hole of the oxidized stone layer, and Fig. 10(4) is the single-point chain i [0052] shown in Fig. 10(a). In the fifth embodiment, for example, a microscopic hole pattern in which the i side is 3 〇 nm or the like can be formed. [0053] Fig. 5 is a top plan view showing an example of a manufacturing apparatus of a semiconductor device for carrying out the semiconductor device manufacturing method. In the central portion of the manufacturing apparatus 1 of the semiconductor device, a vacuum transfer chamber 10 is provided, and a plurality of (six in the present embodiment) processing chambers η to 16 are disposed around the vacuum transfer chamber 10. Within the processing chambers, plasma etching and activation of the film forming gas chemical vapor deposition by heating the contact medium can be performed. [0054] In the vacuum conveying chamber to the near month ίι side of the 10 (lower side in the figure), two vacuum preparations are provided to the crucible, and the vacuum front chamber 17 is closer to the front side (lower side in the figure), and is provided for The transport chamber 16 200929358 18 of the substrate (the semiconductor wafer W in the present embodiment) is transported in the atmosphere. Further, on the front side (lower side in the drawing) of the transport chamber 18, a plurality of substrate housing cases (boxes or hoops) in which a plurality of semiconductor wafer cassettes can be accommodated are provided (three in FIG. 5) The mounting portion 19' is provided on the side of the transport chamber 18 (on the left side in the drawing) with a surface or an orientation mechanism 20 for detecting the position of the semiconductor wafer W by the recess.

Between the true second preparation 17 and the delivery chamber 18, between the vacuum preparation chamber I? and the real delivery chamber 10, the vacuum delivery chamber 1 and the processing chamber J have a gate valve 22' between Airtightly closed and open. A vacuum conveying mechanism 30 is provided in the vacuum to 1 Torr. The vacuum transfer mechanism 30 includes a first picker 31 and a second picker 32. By this, the semiconductor wafer w can be fed and sent out to each processing chamber; == to 17 〇 [0056] 40, t atmospheric transport mechanism 40. This atmospheric transport mechanism - the first pick # 41 and the second picker 42, can be removed from the skin by the surname, ^ ί. The atmospheric conveying mechanism 4° can feed and send the semiconductor: 81 W per day. [: Set 7 E 9 boxes or boxes, vacuum preparation chamber 17, and orientation structure 2. ❹ 动作 动作 动作 动作 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , ^62 is formed by the process manager to manage the display of the operating status of the semiconductor device 1 and display the semiconductor device manufacturing [0059] Yi Temple. 5 The memory is stored in the right part of the 63? Control program for various treatments in the swivel seam 'Red County Laker 61 Control (Software) or Processing Condition Data #". Also, in response to the request, the expected processing is performed from the user interface 17 200929358 ' (10). And the control program or the processing device 1 is sent for use on the line. The device can be transmitted at any time by, for example, a dedicated line. The structure can be implemented on the first to fifth actual wafers. From the above semiconductor package, the film is formed: the film is removed by coating, exposure, and The development step is carried out by other coating means and developing means. 1 、 、 曝光 曝光 曝光 曝光 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 006 Fig. 2 (a) to (g) are views showing the steps of the second embodiment of the present invention. Fig. 3 (a) to (g) are views showing the steps of the third embodiment of the present invention. 4(a) to 4(g) are diagrams showing the steps of the fourth embodiment of the present invention. Figure. Fig. 5 is a schematic diagram of the configuration of the fifth embodiment of the present invention. Fig. 6 (a) to (f) are schematic views showing the steps of the fifth embodiment of the present invention. ^ is a schematic view showing the plane in the steps of the fifth embodiment of the present invention. Fig. 8 is a schematic view showing the steps of the fifth embodiment of the present invention. Fig. 9 is a plan view showing the structure of the fifth embodiment of the present invention. Fig. 10(p) is a schematic view showing the configuration of the fifth embodiment of the fifth embodiment of the present invention. [Major component symbol description] 18 200929358 [0062] W...Semiconductor wafer 1. Manufacturing device for semiconductor device 10. Vacuum transfer chamber 11 to 16...Process chamber 17: Vacuum preparation chamber 18 .. .Transport chamber 19.. Mounting part 20.. Orientation mechanism 0 22... Gate valve 30.. Vacuum conveying mechanism 31, 41... 1st picker 32, 42... 2nd picker 40.. . Atmospheric conveying mechanism 60.. Control unit 61.. Process controller 62.. User interface 63: Memory unit 100.. Base layer φ 101... Polysilicon layer 102, 503, 513... Reflective film (BARC) 103, 134, 504, 514.. · photoresist 104, 135, 505, 515... SiO 2 film 120 ... Si3N4 film 131.. etched layer 132.. organic film 133.. 50. Membrane (or LTO film) 140.. .510. Membrane 500.. . Oxide layer 19 200929358 501.. Niobium nitride layer 502.. Amorphous layer

Claims (1)

200929358 X. Patent Application Scope of the Invention: The manufacturing method of the 弁 device is characterized in that the conductor device is formed by etching the photoresist film and exposing the etched layer on the substrate to a predetermined pattern: The following steps: , I ^ half = ^ step, in the first of the photoresist! The film of the milk 2 is formed on the pattern; the pattern of the Si〇2 film is left in the film to form the H Ϊ formation step of the film, and the first pattern of the photoresist is removed to form the ton of 2. ^Method of manufacturing a semiconductor device according to the scope of the patent application, 3· A method for manufacturing a semiconductor device according to the first or second aspect of the patent, a step of trimming the photoresist cladding layer before the step of the ship An antireflection film composed of an organic material. The pattern of the semiconductor device according to the second or second aspect of the patent application, after the second pattern forming step, the second pattern is used as a mask to etch the under layer and the tantalum nitride layer. Or a layer of yttrium oxynitride. 9. The method of manufacturing a semiconductor device according to claim 1 or 2, further comprising the step of: after the second pattern forming step, using the second pattern as an inorganic material for masking the lower layer The antireflection film is formed, and thereafter the organic film of the lower layer of the antireflection film composed of the beneficial material is etched. The method of manufacturing a semiconductor device according to the fifth aspect of the invention, wherein the antireflection film constituting the material is a SOG film, an LTO film or a SiON film. 7. A method of fabricating a semiconductor device, etching an etched layer on a substrate to form a semiconductor device, comprising the steps of: forming a plurality of lines in a first pattern forming step i case; @1st film forming step 'filming the SiO 2 film on the first pattern; 21 200929358 1 Fig. ίί, step the Si 〇 2 film so that it only remains _ photoresist of the second pattern If pattern a forming step of removing the first pattern to form a first step of the Si fullness, wherein the second pattern is the first layer of the mask surname! The mask pattern forming step 'forms a photoresist step in a direction perpendicular to the red pattern of the plurality of linear patterns, and forms a film on the third pattern; sidewall portion; X1 step, engraving The (10)2 film is left to remain only in the third pattern 4; 4 pattern forming step 'removing the third pattern to form the first film of the film, the first surname step' and the fourth pattern and the The first mask layer is a second mask layer of the lower layer of the monument; and the early layer is a mask, and the step of forming the first mask layer and the second mask forming the mask is a mask. A hole is formed in the layer of the surname. Photographing layer 8· The manufacturing method of the semiconductor device of the seventh aspect of the patent, in which ©. The chemical vapor deposition of the film body to form a disordered body is performed in the first ^ 2nd 9. = the manufacturing method of the transfer device of the seventh or eighth item, the following steps: ', ^ in the Before the first film forming step, the anti-reflection film composed of the material of the i-th pattern and the surname material is trimmed; and the anti-reflection film composed of the third material and the material is trimmed before the second film forming step. Organic 10. The method for manufacturing a semiconductor device according to claim 7 or 8, wherein the mask 1 is composed of a pin, and the second mask layer is composed of a plurality of layers. / 22 200929358 The picture is layered into a predetermined processing chamber for accommodating the substrate; 23⁄4 body is used to treat the processing gas into the processing chamber; and 12 =======object surface 1 2~τ exhibition manufacturing method . For example, the manufacturing method of the patented Fanyuan semiconductor device is applied. A method of manufacturing a semiconductor device according to the manufacturing method of the semiconductor device of the first to the ig. °Special spear range brother 1 to ι〇中任 ^一,囷式·· ❹ 23