200919622 九、發明說明 【發明所屬之技術領域】 本發明是關於對例如液晶顯示器（LCD )的平面顯示 板（FPD )製造用玻璃基板等基板施以乾式蝕刻等電漿處 理的處理室內基板載放用的載台及使用載台之電漿處理裝 置。 【先前技術】 例如：FPD或半導體的製造過程中，是對被處理基板 即玻璃基板進行乾式蝕刻等的電漿處理。上述電漿處理執 行用的電漿處理裝置是於基板載放在處理室內所設置的載 台上的狀態下生成電漿，利用該電漿對基板施以指定的電 漿處理。 上述電漿處理裝置中，被處理基板載放用的載台，具 備：電漿生成用的施加有高頻電力具下部電極功能的基材 ;及設置在基材周圍的屏蔽環。該屏蔽環是爲了提高電漿 集中性及高頻電力絕緣而設置，其是以礬土等絕緣性陶瓷 形成，固定在基材。 然而’近年來由於FPD用玻璃基板的大型化趨勢，以 致屏蔽環一體成型變得困難，因此如專利文獻1的記載是 採用分割型的屏蔽環。 如第1 〇 ( a )圖所示，專利文獻1所記載的分割型屏 蔽環1 07 ’例如：以曲柄形狀的4個分割片1 07a成組合狀 態配置在基材1 〇 5的周圍。接著，屏蔽環1 〇 7的分割片 -4- 200919622 l〇7a是由固定螺絲109緊固在基材105。於該狀況，基材 1 〇 5的溫度調整及電漿的連續照射造成的熱，會導致基材 105及屏蔽環107熱膨脹，但因爲基材105爲鋁等金屬製 ，其熱膨脹係數比礬土等陶瓷形成的屏蔽環107還大，所 以熱會造成基材1 05產生較大的位移。於此，若固定螺絲 1 09爲毫無間隙的緊固狀態時，兩者的熱膨脹差勢必造成 屏蔽環107龜裂，因此爲了防止該龜裂產生，如第i〇(a )圖A - A剖面圖的第1 0 ( b )圖所示，螺絲孔1 〇 9 a和固 定螺絲1 〇 9之間設有間隙。因此，溫度上昇時，屏蔽環 1 0 7的分割片1 〇 7 a會因此螺絲孔1 〇 9 a的間隙存在而被推 向熱膨脹係數較大的基材1 〇 5隨著基材1 〇 5位移，但溫度 恢復成常溫時，如第1 1 ( a )圖所示，基材丨〇 5和屏蔽環 1 〇7之間會產生間隙1 〇 8。即’溫度恢復成常溫時，螺絲 1 0 9會隨著基材1 〇 5的收縮回到原來位置，但固定螺絲 1 09是以較寬鬆的狀態鎖緊屏蔽環丨〇7避免屏蔽環丨〇7龜 裂，因此如第1 1 ( a)圖B-B剖面圖的第n ( b )圖所示 ’只有固定螺絲109本身移動在間隙1〇9a，而屏蔽環ι〇7 的分割片1 〇 7 a是不會回到原來位置，結果導致基材1 〇 5 和屏蔽環107之間產生間隙108。 如上述當基材1 〇 5和屏蔽環i 〇 7之間一旦產生間隙， 則在下次電槳施加時即使載台的溫度上昇，但依舊維持著 該間隙’恐怕該間隙會引起異常放電。此外，若爲了避免 該間隙產生而加強屏蔽環1 07固定用的螺絲1 〇9的緊固力 時’恐怕陶瓷製的屏蔽環1 0 7會因熱應力而破損。 -5- 200919622 [專利文獻1]日本特開2003-115476號公報 【發明內容】 [發明欲解決之課題] 本發明是有鑑於上述狀況而硏創的發明，目的是提供 一種不會有如屏蔽環之屏蔽構件破損危險性可降低熱膨脹 差引起的屏蔽構件和基材間之間隙的載台及使用載台之電 漿處理裝置。 [用以解決課題之手段] 爲解決上述課題，本發明的第1觀點，是提供一種在 基板施以電漿處理的處理室內載放基板的載台，其特徵爲 ’具備：金屬製基材；設置在該基材上基板載放用的載部 ;及設置成圍繞著上述載部及上述基材的上部周圍由絕緣 性陶瓷形成的屏蔽構件，上述屏蔽構件是分割成複數的分 割片，並且具有可彈推上述分割片使分割片彼此接近的彈 推機構。 上述第1觀點中，可構成爲，上述彈推機構具有可連 接鄰接的分割片將該等分割片彈推往彼此拉攏方向的彈推 構件。此外’也可構成爲：上述基板是矩形基板，上述屏 蔽構件爲框緣狀，上述各分割片是包括各角部成曲柄狀形 成有4個。再加上，又可構成爲：上述基材，具有凸部， 該凸部設有上述載部，上述屏蔽環是設置成圍繞著上述凸 部及上述載部。又加上，還可構成爲上述彈推機構具有上 -6- 200919622 述彈推構件覆蓋用的蓋構件。 另外，可構成爲，上述基材具有凸部，該凸部設有上 述載部，上述屏蔽環是設置成圍繞著上述載部及上述凸部 ，上述彈推機構，具有：設置在上述分割片的凹部；插入 在上述凹部，可繫結上述分割片和上述基材的螺絲構件； 及設置在上述螺絲構件和上述分割片的上述凹部內的壁部 之間，可將上述分割片往上述基材的凸部側彈推的彈推構 件。此外，又可構成爲，上述基材，具有凸部，該凸部設 有上述載部，上述屏蔽環是設置成圍繞著上述凸部，上述 彈推機構，具有：設置在上述分割片的磨缽狀凹部：插入 在上述凹部的錐形墊圈；中間隔著錐形墊圈可繫結上述分 割片和上述基材的螺絲構件；及具有介於上述螺絲構件和 上述錐形墊圈之間的彈推構件，在冷卻過程上述基材和上 述分割片之間產生熱膨脹差時，上述彈推構件，可隔著上 述錐形墊圏將上述分割片往上述基材的凸部側彈推。於該 狀況時’構成爲具有介於上述螺絲構件頭部和上述基材之 間，可固定上述螺絲構件的固定構件。再加上，於該等構 成中’又可構成爲’上述基板是矩形基板，上述屏蔽構件 爲框緣狀’上述各分割片是包括各角部成曲柄狀形成有4 個，上述彈推機構是設置在各分割片的角部，各分割片的 鄰接部’形成有可在上述分割片隨著上述彈推機構的彈推 力位移時讓鄰接的分割片往內側位移的階差。此外，上述 彈推機構’又可構成爲具有上述凹部覆蓋用的蓋構件。 又加上，上述任一構成中，上述彈推構件最好是彈簧 -7- 200919622 構件。 上述任一構成中，上述載部也可構成爲具有基板靜電 吸附用的靜電吸盤。此外，又具有可對上述基材供應電漿 生成用高頻電力的高頻電力供應電源。 本發明的第2觀點是提供一種電漿處理裝置，其特徵 爲，具有：基板收容用處理室；在上述處理室內載放基板 具有上述第1觀點構成的載台；可對上述處理容器內供應 處理氣體的處理氣體供應機構；在上述處理室內生成處理 氣體電漿的電漿生成機構；及上述處理室內排氣用的排氣 機構。 上述第2觀點中，上述電漿生成機構，可使用具有可 對上述基材供應電漿生成用高頻電力的高頻電力供應電源 之電漿生成機構。 [發明效果] 根據本發明時，屏蔽構件是分割成複數分割片，並且 具有可彈推上述分割片使分割片彼此接近的彈推構件，因 此載台一旦加熱後的冷卻過程中，屏蔽構件的分割片和基 材的熱膨脹差是難以在該等間形成有間隙。 【實施方式】 [發明之最佳實施形態] 以下，參照所附的圖面，對本發明的實施形態進行說 明。第1圖是表示設有本發明一實施形態相關載台的電漿 -8- 200919622 處理裝置剖面圖。該電漿處理裝置1是以FPD用玻 G的指定處理執行用的裝置加以剖面圖示，構成爲 合式平行平板電漿蝕刻裝置。於此，FPD，例如是 顯示器（LCD)、場致發光（Electro Luminescence 顯示器、電漿顯示板（PDP )等爲例子。 該電漿處理裝置1，具有例如表面經陽極氧化 防蝕處理）過的鋁形成的角筒形狀的處理室2。該 2內的底部設有被處理基板即玻璃基板G載放用的 〇 載台3是隔著絕緣構件4支撐在處理室2的底 有：鋁等金屬製凸型的基材5;設置在基材5的凸： 璃基板G載放用的載部6;及設置圍繞著載部6及 的凸部5 a的周圍由絕緣性陶瓷例如礬土形成的框 蔽環7。載部6是構成玻璃基板G靜電吸附用的靜 。此外，基材5的內部’設有玻璃基板G溫度調整 溫機構（未圖示）。再加上’基材5的周圍設有可 屏蔽環7由絕緣性陶瓷例如礬土形成的環狀絕緣環 電吸盤構成用的載部6 ’具有：礬土等絕緣陶瓷構 瓷噴鍍皮膜4 1 ;及埋設在該陶瓷熔射皮膜4 1內部 42。電極42是透過供電線33連接有直流電源34， 自於該直流電源3 4的直流電壓以靜電吸附著玻璃: 〇 處理室2的底壁插通著可昇降的昇降插銷10, 插銷1 〇是貫通絕緣部4及載台3 ’執行往載台3上 璃基板 容量結 以液晶 ；LE ) 處理（ 處理室 載台3 部，具 5 a上玻 基材5 緣狀屏 電吸盤 用的調 支撐著 8。靜 成的陶 的電極 利用來 基板G 該昇降 的玻璃 -9- 200919622 基板G的裝載及不裝載。該昇降插銷10在搬運玻璃基板 G時，上昇至載台3上方的搬運位置，除此之外其他時間 是沒入在載台3內。 載台3的基材5連接有高頻電力供應用的供電線12 ’ 該供電線1 2連接有整合器1 3及高頻電源1 4。從高頻電源 14供應有例如13.56MHz高頻電力至載台3的基材5。因 此，載台3具有下部電極的功能。 上述載台3的上方，設有和該載台3平行相向具有上 述電極功能的噴灑頭20。噴灑頭20是支撐在處理室2上 部，內部具有內部空間2 1的同時，在載台3的相向面形 成有處理氣體噴出用的複數噴出孔22。該噴灑頭20是形 成接地，和具有下部電極功能的載台3 —起構成一對平行 平板電極。 噴灑頭20的上面，設有氣體導入口 24，該氣體導入 口 24連接有處理氣體供應管25，該處理氣體供應管25是 連接於處理氣體供應源28。此外，處理氣體供應管25是 在與處理氣體供應源28之間設有開閉閥26及質量流量控 制器27。從處理氣體供應源28供應有電漿處理例如電漿 蝕刻用的處理氣體。處理氣體是可使用鹵素類氣體、02氣 體、Ar氣體等通常使用在該領域的氣體。 處理室2的底部形成有排氣管29，該排氣管29連接 有排氣裝置30。排氣裝置30具備有渦輪分子泵等真空泵 ’藉此構成爲可將處理室2內真空吸引成指定的減壓環境 氣。此外’處理室2的側壁設有基板搬出入口 3 1，該基板 -10- 200919622 搬出入口 31是利用閘閥3 2成爲可開閉。接著，在該閘閥 3 2開的狀態下利用搬運裝置（未圖示）搬出或搬入玻璃基 板G。 其次，針對載台3進行說明。 第2圖爲表示載台3的平面圖。如該圖所示，載台3 構成要素的屏蔽環7是形成分割型，該例是分割成4個成 曲柄形狀的分割片7a。接著，鄰接的分割片7a之間設有 可往分割片7a彼此接近方向彈推分割片7a的彈推機構50 〇 彈推機構50，如第3(a)圖的平面圖及第3(b)圖 的剖面圖所示，具有可連接屏蔽環7的相鄰接的分割片7 a 彼此之間，可彈推該等鄰接的分割片彼此使該等分割片互 相接近，具體而言可將該等分割片朝彼此拉近方向彈推的 彈簧構件5 1。該等分割片7a埋設有彈簧構件5 !端部固定 用的固定構件5 2。此外，分割片7 a的對應彈推機構5 0的 部份，上面爲缺口，該缺口部份設有可保護彈簧構件5 1 避免電漿侵蝕的同時，可阻止彈簧構件5 1飛出上方的蓋 構件53。該蓋構件53是由屏蔽環7相同的陶瓷構件形成 ，在角部4處形成有長圓形的螺絲孔54a，透過該螺絲孔 54a由螺絲54使其固定在分割片7a。 其次，針對上述構成的電漿蝕刻裝置1的處理動作進 行說明。 首先’打開閘閥3 2，利用搬運臂（未圖示）將玻璃基 板G經由基板搬出孔31搬入處理室2內，載放在載台3 -11 - 200919622 的靜電吸盤6上。於該狀況，讓昇降插銷1 0突出於上方 位於支撐位置，將搬運臂上的玻璃基板G交接至昇降插銷 1 〇上。然後降下昇降插銷1 〇使玻璃基板G載放在載台3 的靜電吸盤構成用的載部6上。 然後，關閉閘閥3 2，由排氣裝置3 0將處理室2內真 空吸引成指定的真空度。接著，從直流電源3 4對載部6 的電極42施加電壓，藉此以靜電吸附玻璃基板G。其次 ，打開閥26，從處理氣體供應源28將處理氣體由質量流 量控制器27調整其流量的同時經過處理氣體供應管25、 氣體導入口 24導入至噴灑頭20的內部空間2 1，又通過噴 出孔22對基板G均勻噴出，調整排氣量的同時將處理室 2內控制成指定壓力。 於該狀態下從高頻電源1 4透過整合器1 3將電漿生成 用的高頻電力供應至載台3的基材5，在成爲下部電極的 載台3和成爲上部電極的噴灑頭20之間產生高頻電場， 生成處理氣體的電漿，利用該電漿對玻璃基板G施以電漿 處理。 在進行該電漿處理時，當利用基材5內的調溫機構調 溫成比室溫還高的溫度時，或者當從高頻電源1 4連續施 加高頻電力連續照射電漿時，該等狀況會讓載台3受到加 熱，導致基材5及屏蔽環7同時熱膨脹。 該狀況時，若是如習知只以螺絲單純固定著屏蔽環7 的分割片7a，則如第4圖所示，在屏蔽環7隨著基材5熱 膨脹後冷卻至室溫爲止的過程，陶瓷製屏蔽環7和金屬製 -12- 200919622 基材5的熱膨脹差會造成基材5和屏蔽環7之間產生間隙 S。 但是，本實施形態，如第5圖所示，是利用彈推機構 5〇對鄰接的分割片彼此施加可使該等分割片彼此接近，具 體而言朝彼此拉攏方向的彈推力A，因此在一旦加熱後的 冷卻過程中，可使習知無法完全回到原來位置的分割片7 a 朝原來位置拉攏，能夠使基材5和屏蔽環7之間不產生間 隙。 另，對於彈推機構5 0使用彈簧構件5 1做爲彈推力施 加手段，但只要能夠對彼此鄰接的分割片7a施加朝彼此 接近方向的彈推力則不在此限。 其次，針對載台的其他實施形態進行說明。 第6圖是表示其他實施形態相關的載台平面圖。如該 圖所示’該實施形態具有分割成4個成曲柄形狀分割片7 b 的屏蔽環7 各分割片7 a的角部，設有1處兼作爲螺絲 固定部的彈推機構60。本實施形態，如第6圖所示，在各 分割片7b的鄰接部形成有段部7c。接著，彈推機構60是 朝第6圖箭頭符號B所示的內側方向（中心方向）彈推分 割片7b。即’彈推機構60是將分割片7b朝基材5的凸部 5 a (參照第1圖）彈推成彼此接近。接著段部7 c是在分 割片由彈推機構6 0造成位移時，形成推壓著鄰接的分割 片7b使分割片7b朝箭頭符號c所示內側方向位移。 彈推機構60’如第7(a)圖的剖面圖及第7(b)圖 的平面圖所示’具有：設置在屏蔽環分割片7b的圓形 -13- 200919622 的 5 7b 可 件 〇 結 64 後 使 割 60 讓 支 設 力 鄰 形 凹部ό 1 ;設置在凹部61正下方比凹部6 1還小成紡錘形 凹部62 ;插入在凹部6 1及62可繫結分割片7b和基材 的螺絲63 ;及設置在凹部62內位於螺絲63和分割片 壁部之間的彈簧構件6 4。此外，凹部6 1的上部螺合有 保護彈簧構件64避免電槳侵蝕的同時，可阻止彈簧構 64飛出，由屏蔽環7 /相同的陶瓷構件形成的蓋構件65 螺絲6 3的頭部是位於凹部61內成爲凹部61底面的繫 面，其螺紋部是貫通凹部62螺合在基材5。於該狀態下 螺絲6 3因是成爲固定在基材5的狀態，所以彈簧構件 是以基材5爲基準將分割片7b往箭頭符號B方向彈推 即是將分割片7b彈推成彼此接近。 因此’和上述的實施形態相同，在載台3 —旦加熱 的冷卻過程中，可使分割片7b朝原來位置拉攏，能夠 基材5和屏蔽環7 /之間不產生間隙。於該狀況，各分 片7b只要在角部設有1個兼爲螺絲固定部的彈推機構 ，就能夠利用段部7c朝期望方向推動鄰接之分割片7b 分割片7b朝期望方向位移，因此不需要如習知使用2 螺絲，能夠實現降低螺絲數量。不過，也可和習知相同 有2處螺絲固定部（彈推機構）。 另，於該實施形態中，同樣地彈推機構60的彈推 施加手段，並不限於彈簧構件64，只要構成能夠對彼此 接的分割片7 b施加朝彼此接近方向的彈推力即可。 接著，針對載台的另一實施形態進行說明。 第8圖是另一實施形態相關的載台平面圖。本實施 -14- 200919622 態的載台，除彈推機構的構造以外具有利第6圖所示的相 同構造。即，取代彈推機構6 0使用和彈推機構6 0不同構 造的彈推機構。 彈推機構7 〇，如第9圖的剖面圖所示’具有：設置在 屏蔽環7 /分割片7b的圓形凹部71 ;及設置在凹部71正 下方連續成同心狀的磨缽狀凹部72，凹部72嵌入有錐形 墊圈73。錐形墊圈73是在中心形成有貫通孔，該貫通孔 插入有螺絲軸套7 5。螺絲軸套7 5是在其中心形成有螺絲 構件74插入用的孔，該孔插入有螺絲構件74。此時，該 螺絲軸套75是位於螺絲構件74的頭部下面至基材5之間 ，具有可固定螺絲構件74的功能。接著，螺絲構件74及 其周圍的螺絲軸套7 5插入在錐形墊圈7 3的貫通孔，螺絲 構件74的下端部螺合在基材5。螺絲軸套75的上端是成 爲凸緣部75a，錐形墊圈73上部的貫通孔周圍形成有凹部 7 6，凸緣部7 5 a的下面和凹部7 6的底面之間設有線圈狀 彈簧構件7 7。另，錐形墊圈7 3的下面和基材5的上面之 間形成有間隙。此外，凹部71的上部，螺合有可保護彈 簧構件7 7及螺絲構件74避免電槳侵蝕的同時，可阻止彈 簧構件7 7及螺絲構件74飛出，由屏蔽環7 —相同的陶瓷 構件形成的蓋構件7 8。 於此’可將屏蔽環7 /固定在基材5的固定力量是只 有彈簧構件77的反彈力。於該狀態下，當載台從加熱狀 態回到常溫時，錐形墊圈75因是形成定位，所以受到基 材5收縮的拉扯，錐形墊圈7 5會成爲抵接於凹部7 2內側 -15- 200919622 壁部72a的狀態。接著，彈簧構件77會彈推（ 形墊圈73，該彈推力會導致產生可將屏蔽環7-件74軸方向正交的箭頭符號B方向推壓的力量。 因此，和上述的實施形態相同，於載台3 一 的冷卻過程中’可使分割片7b朝原來位置拉攏 基材5和屏蔽環7 ’之間不產生間隙。於該狀況 片7 b只要設有1個兼爲螺絲固定部的彈推機構 夠利用段部7c朝期望方向推動鄰接之分割片7b 需要如習知般使用2支螺絲，能夠實現降低螺絲 過，也可和習知相同設有2處螺絲固定部（彈推ί 另，於該實施形態中，同樣地彈推機構70 施加手段，並不限於線圈狀彈簧構件77，也可使 彈簧構件。再加上，並不限於彈簧構件，只要構 彼此鄰接的分割片7b施加朝彼此接近方向的彈 〇 以上是針對本發明的實施形態進行了說明， 並不限於上述實施形態也可加以各種變形。例如 構，只要在加熱後的收縮時能夠彈推屏蔽環的分 割片彼此接近，則並不限於上述實施形態。此外 施形態是以屏蔽環分割成4個爲例子進行了說明 限於此。又加上，上述實施形態中，針對本發E FPD用玻璃基板的電漿處理時的狀況進行了說明 限於此，本發明可應用在其他各種的基板。 壓縮）錐 朝螺絲構 旦加熱後 ，能夠使 ，各分割 7 〇，就能 ，因此不 數量。不 幾構）。 的彈推力 用其他的 成能夠對 推力即可 但本發明 :彈推機 割片使分 ，上述實 ，但並不 闲應用在 ，但並不 -16- 200919622 【圖式簡單說明】 第1圖爲表示設有本發明一實施形態相關載台的電發 處理裝置剖面圖。 第2圖爲表示第1圖電漿處理裝置所使用的本發明一 實施形態相關的載台平面圖。 第3圖爲表示第2圖載台的屏蔽環所使用的彈推機構 平面圖及剖面圖。 第4圖爲表示習知載台在加熱後的冷卻過程基材和屏 蔽環之間產生間隙的狀態圖。 第5圖爲表示利用第3圖彈推機構使基材和屏蔽環之 間不產生間隙的狀態圖。 第6圖爲表示本發明其他實施形態相關的載台平面圖 〇 第7圖爲表示第6圖載台的屏蔽環所使用的彈推機構 剖面圖及平面圖。 第8圖爲本發明另一實施形態相關的載台平面圖。 第9圖爲表示第8圖載台的屏蔽環所使用的彈推機構 剖面圖。 第10圖爲表示習知載台的平面圖及其A-A剖面圖。 第1 1圖爲表示加熱後的冷卻過程基材和屏蔽環之間 產生間隙的狀態平面圖及B-B剖面圖。 【主要元件符號說明】 1 :電漿處理裝置 -17- 200919622 2 :處理室 3 :載台 5 :基材 6 :載部（靜電吸盤） V ' 7 :屏蔽環 7a、7b :分割片 1 4 :高頻電源 2 0 :噴灑頭 2 8 :處理氣體供應源 3 4 :直流電源 5 0、6 0、7 0 :彈推機構 5 1、6 4、7 7 :彈簧構件 5 3、6 5、7 8 :蓋構件 61、6 2 :凹部 6 3 :螺絲構件 71、7 2 :凹部 7 2 a :壁部 7 3 :錐形墊圈 74 :螺絲構件 7 5 :螺絲軸套 G :玻璃基板 -18-200919622 IX. OBJECT OF THE INVENTION [Technical Field] The present invention relates to a substrate for processing a substrate which is subjected to plasma treatment such as dry etching for a substrate such as a glass substrate for manufacturing a flat panel (FPD) for liquid crystal display (LCD). A stage for use and a plasma processing apparatus using the stage. [Prior Art] For example, in the manufacturing process of an FPD or a semiconductor, plasma processing such as dry etching of a substrate to be processed, that is, a glass substrate, is performed. The plasma processing apparatus for performing the plasma processing described above generates plasma in a state where the substrate is placed on a stage provided in the processing chamber, and the plasma is applied to the substrate by the plasma treatment. In the plasma processing apparatus, the stage for mounting the substrate to be processed includes a substrate to which a lower electrode function of the high-frequency power device is applied for plasma generation, and a shield ring provided around the substrate. The shield ring is provided for the purpose of improving plasma concentration and high-frequency power insulation, and is formed of an insulating ceramic such as alumina and fixed to a substrate. However, in recent years, the size of the glass substrate for FPD has become large, and it has become difficult to integrally form the shield ring. Therefore, as described in Patent Document 1, a split type shield ring is used. As shown in Fig. 1(a), the split type shield ring 107 described in Patent Document 1 is disposed around the base material 1 〇 5 in a combined state, for example, four split pieces 1 07a having a crank shape. Next, the split piece of the shield ring 1 〇 7 -4- 200919622 l〇7a is fastened to the base material 105 by a fixing screw 109. In this case, the temperature adjustment of the substrate 1 〇 5 and the heat caused by the continuous irradiation of the plasma cause the substrate 105 and the shield ring 107 to thermally expand. However, since the substrate 105 is made of a metal such as aluminum, the thermal expansion coefficient is higher than that of the alumina. The shield ring 107 formed by the ceramic is also large, so the heat causes a large displacement of the substrate 105. Here, if the fixing screw 109 is in a state of tightness without a gap, the difference in thermal expansion between the two must cause the shielding ring 107 to crack, and therefore, in order to prevent the occurrence of the crack, as shown in Fig. i (a), Fig. A - A In the 10th (b) diagram of the sectional view, a gap is provided between the screw holes 1 〇 9 a and the fixing screws 1 〇 9. Therefore, when the temperature rises, the split piece 1 〇 7 a of the shield ring 107 is thus pushed to the substrate 1 having a large thermal expansion coefficient due to the gap of the screw hole 1 〇 9 a. With the substrate 1 〇 5 Displacement, but when the temperature returns to normal temperature, as shown in Figure 1 1 ( a ), a gap 1 〇 8 is generated between the substrate 丨〇 5 and the shield ring 1 〇 7 . That is, when the temperature returns to normal temperature, the screw 1 0 9 will return to the original position with the shrinkage of the substrate 1 〇 5, but the fixing screw 1 09 locks the shielding ring 较 7 in a looser state to avoid the shielding ring 丨〇 7 cracked, so as shown in the nth (b) of the sectional view of Fig. 1 (a), the only fixed screw 109 itself moves in the gap 1〇9a, and the split piece 1 〇7 of the shield ring ι〇7 a does not return to the original position, resulting in a gap 108 between the substrate 1 〇 5 and the shield ring 107. When a gap is formed between the substrate 1 〇 5 and the shield ring i 〇 7 as described above, even if the temperature of the stage rises at the time of the next application of the paddle, the gap is maintained, which may cause abnormal discharge. In addition, if the tightening force of the screw 1 〇 9 for fixing the shield ring 107 is increased in order to avoid the occurrence of the gap, it is feared that the ceramic shield ring 107 will be damaged by thermal stress. [Patent Document 1] Japanese Laid-Open Patent Publication No. 2003-115476 [Description of the Invention] [Problem to be Solved by the Invention] The present invention has been made in view of the above circumstances, and an object of the invention is to provide a shield ring The risk of damage to the shield member can reduce the gap between the shield member and the substrate caused by the difference in thermal expansion and the plasma processing device using the stage. [Means for Solving the Problem] In order to solve the above problems, a first aspect of the present invention provides a stage for placing a substrate in a processing chamber in which a substrate is subjected to plasma treatment, and is characterized in that: a carrier for mounting the substrate on the substrate; and a shield member formed of an insulating ceramic around the upper portion of the carrier portion and the substrate, wherein the shield member is divided into a plurality of divided pieces. And a poppet mechanism that can push the split piece to bring the split pieces closer to each other. In the above first aspect, the elastic pushing mechanism may be configured such that the divided piece that can be connected to the adjacent piece can be pushed toward the pulling direction of each other. Further, the substrate may be a rectangular substrate, the shielding member may be in the shape of a frame, and each of the divided pieces may be formed in a crank shape including four corner portions. Further, the base material may have a convex portion, and the convex portion may be provided with the carrier portion, and the shield ring may be provided to surround the convex portion and the carrier portion. Further, it is also possible to configure the above-described ejecting mechanism to have a cover member for covering the elastic member of the above-mentioned -6-200919622. Further, the base material may have a convex portion provided with the carrier portion, the shield ring may be disposed to surround the carrier portion and the convex portion, and the elastic pushing mechanism may be provided on the divided piece a recessed portion; the screw member inserted into the recessed portion to fasten the split piece and the base material; and the wall portion provided between the screw member and the recessed portion of the split piece, the split piece may be passed to the base A push-pull member that pushes the convex side of the material. Further, the base material may have a convex portion provided with the carrier portion, the shield ring may be disposed to surround the convex portion, and the elastic pushing mechanism may have a grinding device provided on the divided piece a conical recess: a tapered washer inserted in the recess; a tapered washer interposed between the split piece and the screw member of the base material; and a bouncing between the screw member and the tapered washer In the member, when the thermal expansion difference is generated between the substrate and the divided piece during the cooling process, the elastic member may be pushed toward the convex portion side of the base material via the tapered spacer. In this case, the fixing member having the screw member interposed between the screw member head portion and the base member is provided. In addition, in the above configuration, the substrate may be a rectangular substrate, and the shield member may be in the shape of a frame. The respective divided pieces are formed by forming four corner portions in a crank shape. The corner portion of each of the divided pieces is formed, and the adjacent portion ' of each of the divided pieces is formed with a step that allows the adjacent divided pieces to be displaced inside when the divided piece is displaced by the elastic thrust of the elastic pushing mechanism. Further, the above-described spring pushing mechanism ' may be configured to have a cover member for covering the above-mentioned recessed portion. Further, in any of the above configurations, the spring pushing member is preferably a spring -7-200919622 member. In any of the above configurations, the carrier portion may be configured to have an electrostatic chuck for electrostatic chucking of the substrate. Further, it has a high-frequency power supply source capable of supplying high-frequency power for plasma generation to the above substrate. According to a second aspect of the present invention, there is provided a plasma processing apparatus comprising: a processing chamber for receiving a substrate; and a stage on which the substrate is placed in the processing chamber; the first processing unit; a processing gas supply mechanism for processing a gas; a plasma generating mechanism for generating a plasma of the processing gas in the processing chamber; and an exhausting mechanism for exhausting the indoor processing chamber. In the above-described second aspect, the plasma generating mechanism can use a plasma generating mechanism having a high-frequency power supply source capable of supplying high-frequency power for plasma generation to the substrate. [Effect of the Invention] According to the present invention, the shield member is divided into a plurality of divided pieces, and has a push-pull member that can push the split pieces to bring the divided pieces closer to each other, so that during cooling of the stage after heating, the shield member The difference in thermal expansion between the split piece and the substrate is such that it is difficult to form a gap between the pieces. [Embodiment] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments of the present invention will be described with reference to the accompanying drawings. Fig. 1 is a cross-sectional view showing a plasma -8-200919622 processing apparatus provided with a stage according to an embodiment of the present invention. The plasma processing apparatus 1 is a cross-sectional view of a device for performing the designated processing of the FGD glass G, and is configured as a parallel parallel plate plasma etching apparatus. Here, the FPD is, for example, a display (LCD), an electroluminescence (Electro Luminescence display, a plasma display panel (PDP), etc. as an example. The plasma processing apparatus 1 has, for example, aluminum whose surface is anodized and etched. A processing chamber 2 in the shape of a corner cylinder is formed. The crucible table 3 on which the glass substrate G to be processed, which is a substrate to be processed, is placed on the bottom of the processing chamber 2 via an insulating member 4: a base material 5 made of a metal such as aluminum; The projection of the base material 5: the carrier portion 6 for placing the glass substrate G; and the frame-shielding ring 7 formed of an insulating ceramic such as alumina around the periphery of the convex portion 5a of the carrier portion 6. The carrier portion 6 is a static electrode for constituting the glass substrate G for electrostatic adsorption. Further, the inside of the substrate 5 is provided with a glass substrate G temperature adjustment mechanism (not shown). Further, the carrier portion 6 having a ring-shaped insulating ring formed by an insulating ceramic such as alumina, which is provided around the substrate 5, has an insulating ceramic ceramic coating film such as alumina. 1 ; and embedded in the interior 42 of the ceramic spray film 4 1 . The electrode 42 is connected to the DC power source 34 via the power supply line 33. The DC voltage from the DC power source 34 electrostatically adsorbs the glass: The bottom wall of the processing chamber 2 is inserted with the lifting pin 10 that can be lifted and lowered, and the pin 1 is Through the insulating portion 4 and the stage 3', the capacity of the glass substrate on the stage 3 is performed by liquid crystal; LE) processing (the processing chamber stage 3, with 5 a upper glass substrate 5 edge-shaped screen electric suction cup support 8. The electrode of the static ceramic is used for the substrate G. The lifting glass -9-200919622 is loaded and unloaded. The lifting plug 10 is lifted to the transport position above the stage 3 when the glass substrate G is transported. In addition, the other time is immersed in the stage 3. The base material 5 of the stage 3 is connected to a power supply line 12 for supplying high-frequency power. The power supply line 1 2 is connected with an integrator 13 and a high-frequency power supply 1 4. The high-frequency power source 14 is supplied with, for example, 13.56 MHz high-frequency power to the substrate 5 of the stage 3. Therefore, the stage 3 has a function of a lower electrode. The upper surface of the stage 3 is provided in parallel with the stage 3. The sprinkler head 20 has the above-mentioned electrode function. The sprinkler head 20 is supported in the treatment. The upper portion of the chamber 2 has an internal space 21 therein, and a plurality of discharge holes 22 for processing gas discharge are formed on the opposing faces of the stage 3. The shower head 20 is formed with a ground and a stage 3 having a lower electrode function. The pair of parallel plate electrodes are formed. The upper surface of the shower head 20 is provided with a gas introduction port 24 to which a process gas supply pipe 25 is connected, which is connected to the process gas supply source 28. The process gas supply pipe 25 is provided with an opening and closing valve 26 and a mass flow controller 27 between the process gas supply source 28. A process gas for plasma treatment such as plasma etching is supplied from the process gas supply source 28. A gas which is generally used in the field such as a halogen gas, an 02 gas, or an Ar gas can be used. An exhaust pipe 29 is formed at the bottom of the processing chamber 2, and the exhaust pipe 29 is connected to the exhaust device 30. The exhaust device 30 is provided. A vacuum pump such as a turbo molecular pump is configured to attract the vacuum in the processing chamber 2 to a designated decompressed atmosphere. Further, the side wall of the processing chamber 2 is provided with a substrate carrying-out port 3 1, which is provided. -10- 200919622 The loading and unloading port 31 is opened and closed by the gate valve 3 2. Then, the glass substrate G is carried out or carried by a transport device (not shown) while the gate valve 3 2 is opened. Next, the stage 3 will be described. Fig. 2 is a plan view showing the stage 3. As shown in the figure, the shield ring 7 of the components of the stage 3 is divided into a split type, and this example is divided into four divided pieces 7a having a crank shape. Between the divided pieces 7a, there are provided a push mechanism 50 that pushes the split piece 7a toward the mutually splitting direction 7a, and the push mechanism 50, such as the plan view of Fig. 3(a) and the section of Fig. 3(b) As shown in the figure, the adjacent divided pieces 7a having the shieldable ring 7 can be connected to each other, and the adjacent divided pieces can be pushed to each other to make the divided pieces close to each other, in particular, the divided pieces can be The spring member 51 is pushed in a direction that is pulled toward each other. The split piece 7a is embedded with a fixing member 52 for fixing the end portion of the spring member 5!. In addition, a portion of the corresponding piece 7 a corresponding to the pushing mechanism 50 is a notch, and the notch portion is provided to protect the spring member 5 1 from plasma erosion, and prevents the spring member 51 from flying upward. Cover member 53. The cover member 53 is formed of the same ceramic member as the shield ring 7, and an oblong screw hole 54a is formed in the corner portion 4, and is fixed to the split piece 7a by the screw 54 through the screw hole 54a. Next, the processing operation of the plasma etching apparatus 1 having the above configuration will be described. First, the gate valve 3 is opened, and the glass substrate G is carried into the processing chamber 2 via the substrate carrying-out hole 31 by a transfer arm (not shown), and placed on the electrostatic chuck 6 of the stage 3-11 - 200919622. In this case, the lift pin 10 is protruded above the support position, and the glass substrate G on the transfer arm is transferred to the lift pin 1 〇. Then, the lift pin 1 is lowered to place the glass substrate G on the carrier portion 6 for forming the electrostatic chuck of the stage 3. Then, the gate valve 3 2 is closed, and the vacuum in the processing chamber 2 is attracted to the specified degree of vacuum by the exhaust unit 30. Next, a voltage is applied from the DC power source 34 to the electrode 42 of the carrier portion 6, whereby the glass substrate G is electrostatically adsorbed. Next, the valve 26 is opened, and the process gas is adjusted from the process gas supply source 28 to the internal space 2 of the shower head 20 through the process gas supply pipe 25 and the gas introduction port 24 while adjusting the flow rate thereof by the mass flow controller 27. The discharge hole 22 is uniformly discharged to the substrate G, and the inside of the processing chamber 2 is controlled to a predetermined pressure while the amount of exhaust gas is adjusted. In this state, the high-frequency power source 14 is supplied to the substrate 5 of the stage 3 through the integrator 13 through the integrator 13 to form the stage 3 serving as the lower electrode and the shower head 20 serving as the upper electrode. A high-frequency electric field is generated between them to generate a plasma of the processing gas, and the glass substrate G is subjected to plasma treatment using the plasma. When the plasma treatment is performed, when the temperature is adjusted to a temperature higher than room temperature by the temperature adjustment mechanism in the substrate 5, or when the high frequency power is continuously applied from the high frequency power source 14 to continuously irradiate the plasma, The condition causes the stage 3 to be heated, causing the substrate 5 and the shield ring 7 to simultaneously thermally expand. In this case, if the split piece 7a of the shield ring 7 is simply fixed by screws as in the prior art, as shown in Fig. 4, the shield ring 7 is cooled to room temperature as the substrate 5 is thermally expanded, and the ceramic is cooled. The shielded ring 7 and the metal -12-200919622 The difference in thermal expansion of the substrate 5 causes a gap S between the substrate 5 and the shield ring 7. However, in the present embodiment, as shown in Fig. 5, the elastic pressing mechanism 5 is used to apply the elastic force A to the adjacent divided pieces so that the divided pieces can approach each other, specifically, the direction in which they are pulled toward each other. In the cooling process after heating, the divided piece 7a which is conventionally unable to completely return to the original position can be pulled toward the original position, so that no gap can be formed between the substrate 5 and the shield ring 7. Further, the spring pushing member 50 is used as the spring force applying means for the spring pushing mechanism 50. However, it is not limited as long as the elastic force of the approaching direction of the divided pieces 7a adjacent to each other can be applied. Next, other embodiments of the stage will be described. Fig. 6 is a plan view showing a stage according to another embodiment. As shown in the figure, the embodiment has a corner portion of each of the divided pieces 7a of the shield ring 7 divided into four crank-shaped divided pieces 7b, and a spring pushing mechanism 60 serving as a screw fixing portion is provided. In the present embodiment, as shown in Fig. 6, a segment portion 7c is formed in an adjacent portion of each divided piece 7b. Next, the bouncing mechanism 60 pushes the split piece 7b toward the inner side direction (center direction) indicated by the arrow symbol B in Fig. 6. In other words, the spring pushing mechanism 60 pushes the divided piece 7b toward the convex portion 5a (see Fig. 1) of the base material 5 to be close to each other. When the segmented piece 7c is displaced by the pinching mechanism 60, the segmented portion 7c is formed by pressing the adjacent segmented piece 7b so that the divided piece 7b is displaced in the inner direction indicated by the arrow symbol c. The push mechanism 60' is as shown in the sectional view of Fig. 7(a) and the plan view of Fig. 7(b) 'having: 5 7b can be set in the circle 13-200919622 of the shield ring segment 7b 64 is post-cutting 60 to make the supporting recess ό 1 ; is disposed below the recess 61 to be smaller than the recess 6 1 into a spindle-shaped recess 62; the screw inserted in the recess 6 1 and 62 can be used to tie the split piece 7b and the substrate 63; and a spring member 64 disposed between the screw 63 and the divided piece wall portion in the recess 62. Further, the upper portion of the recessed portion 61 is screwed with the protective spring member 64 to prevent the erosion of the electric paddle, and the spring structure 64 can be prevented from flying out. The cover member 65 of the shield ring 7/the same ceramic member is the head of the screw 63. The threaded portion is a threaded portion in the concave portion 61 which is a bottom surface of the concave portion 61, and the threaded portion is screwed to the base material 5 in the through-hole portion 62. In this state, since the screw 63 is fixed to the base material 5, the spring member pushes the divided piece 7b in the direction of the arrow B in accordance with the base material 5, that is, the divided piece 7b is pushed closer to each other. . Therefore, in the same manner as in the above embodiment, the divided piece 7b can be pulled toward the original position during the cooling of the stage 3, and no gap can be formed between the substrate 5 and the shield ring 7 /. In this case, each of the segments 7b is provided with a spring pushing mechanism which is also a screw fixing portion at the corner portion, so that the segment portion 7c can be pushed in a desired direction by the adjacent divided piece 7b, and the divided piece 7b is displaced in a desired direction. It is not necessary to use 2 screws as is conventional, which can reduce the number of screws. However, it can be the same as the conventional one. There are two screw fixing parts (pushing mechanism). In the embodiment, the spring pushing means of the spring pushing mechanism 60 is not limited to the spring member 64, and it is sufficient that the split pieces 7b which are adjacent to each other can be biased toward each other. Next, another embodiment of the stage will be described. Fig. 8 is a plan view of a stage according to another embodiment. The stage of the present invention -14-200919622 has the same structure as shown in Fig. 6 except for the structure of the spring pushing mechanism. That is, instead of the push mechanism 60, a push mechanism different from the push mechanism 60 is used. The push mechanism 7 〇, as shown in the cross-sectional view of Fig. 9, has: a circular recess 71 provided in the shield ring 7 / split piece 7b; and a grind-like recess 72 provided concentrically below the recess 71 The recess 72 is embedded with a tapered washer 73. The tapered washer 73 has a through hole formed in the center, and a screw boss 715 is inserted into the through hole. The screw bushing 75 is formed with a hole for inserting the screw member 74 at its center, and the screw member 74 is inserted into the hole. At this time, the screw boss 75 is located between the head of the screw member 74 and the substrate 5, and has a function of fixing the screw member 74. Next, the screw member 74 and the screw boss 7 5 around it are inserted into the through hole of the tapered washer 723, and the lower end portion of the screw member 74 is screwed to the base material 5. The upper end of the screw boss 75 is a flange portion 75a, and a recessed portion 76 is formed around the through hole in the upper portion of the tapered washer 73. A coil-like spring member is disposed between the lower surface of the flange portion 75a and the bottom surface of the recess portion 76. 7 7. Further, a gap is formed between the lower surface of the tapered washer 7 3 and the upper surface of the base material 5. In addition, the upper portion of the recess 71 is screwed to protect the spring member 77 and the screw member 74 from the erosion of the electric paddle, and the spring member 74 and the screw member 74 are prevented from flying out, and the shield ring 7 is formed of the same ceramic member. Cover member 7 8. Here, the fixing force of the shield ring 7 / fixed to the base material 5 is the repulsive force of only the spring member 77. In this state, when the stage returns from the heated state to the normal temperature, the tapered washer 75 is pulled by the contraction of the base material 5 because of the positioning, and the tapered washer 75 is abutted against the inside of the recessed portion 7 2 - 15 - 200919622 The state of the wall portion 72a. Then, the spring member 77 is pushed (the washer 73), and this spring force causes a force to press the arrow symbol B direction in which the shield ring 7-axis 74 is orthogonal to the axial direction. Therefore, similarly to the above-described embodiment, During the cooling process of the stage 3, 'the gap between the substrate 5 and the shield ring 7' can be pulled between the divided piece 7b toward the original position. In this case, the sheet 7b is provided with one screw fixing portion. The push-pull mechanism is capable of pushing the adjacent split piece 7b in the desired direction by the segment portion 7c. It is necessary to use two screws as is conventional, and it is possible to reduce the screw over, and it is also possible to provide two screw fixing portions as in the prior art. Further, in this embodiment, similarly, the applying means of the ejecting mechanism 70 is not limited to the coil-like spring member 77, and the spring member may be added. Further, it is not limited to the spring member, as long as the divided pieces 7b adjacent to each other are configured. The embodiment of the present invention has been described with respect to the application of the magazines in the direction in which they approach each other, and various modifications are possible without being limited to the above-described embodiments. For example, the structure can be pushed and shattered at the time of contraction after heating. The present invention is not limited to the above-described embodiment, and the embodiment is limited to the case where the shield ring is divided into four. The above embodiment is directed to the glass substrate for the present invention. The description of the state of the plasma treatment is limited to this, and the present invention can be applied to various other substrates. After the compression of the cone is heated toward the screw, it can be divided into 7 turns, so that the number is not large. Structure). The spring thrust can be used for other thrusts. However, the present invention: the pusher cutter cuts the pieces, the above is true, but it is not free to apply, but it is not -16-200919622 [Simplified illustration] Figure 1 BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an electric hair processing apparatus provided with a stage according to an embodiment of the present invention. Fig. 2 is a plan view showing a stage according to an embodiment of the present invention used in the plasma processing apparatus of Fig. 1. Fig. 3 is a plan view and a cross-sectional view showing a spring pushing mechanism used for the shield ring of the stage of the second drawing. Fig. 4 is a view showing a state in which a gap is formed between a substrate and a shield ring of a cooling stage after heating in a conventional stage. Fig. 5 is a view showing a state in which no gap is formed between the base material and the shield ring by the push mechanism of Fig. 3. Fig. 6 is a plan view showing a stage according to another embodiment of the present invention. Fig. 7 is a cross-sectional view and a plan view showing a spring pushing mechanism used in the shield ring of the stage of Fig. 6. Figure 8 is a plan view of a stage according to another embodiment of the present invention. Figure 9 is a cross-sectional view showing the push mechanism used for the shield ring of the stage of Figure 8. Figure 10 is a plan view showing a conventional stage and its A-A cross-sectional view. Fig. 1 is a plan view and a cross-sectional view taken along line B-B showing a gap between the substrate and the shield ring in the cooling process after heating. [Explanation of main component symbols] 1 : Plasma processing device -17- 200919622 2 : Processing chamber 3 : Stage 5 : Substrate 6 : Carrier (electrostatic chuck) V ' 7 : Shield ring 7a, 7b: Split piece 1 4 : high frequency power supply 2 0 : sprinkler head 2 8 : processing gas supply source 3 4 : DC power supply 5 0, 60, 7 0: spring pushing mechanism 5 1 , 6 4, 7 7 : spring member 5 3, 6 5, 7 8 : cover member 61, 6 2 : recess 6 3 : screw member 71, 7 2 : recess 7 2 a : wall portion 7 3 : tapered washer 74 : screw member 7 5 : screw sleeve G : glass substrate -18 -