TW200919400A - Display device - Google Patents

Abstract

An objective of the present invention is to provide a display device having a light intensity detecting device, which has a sensitivity compensating function and can be made by a simple process. The present invention provides a display device that has a display area and first and second photodetectors 10a and 10b on a substrate and outputs as a light intensity signal Sa light intensity detected by the first and second pohtodetectors 10a and 10b. The first photodetector 10a includes a first photodetection circuit LS1 outputting a first output signal Sa to a pohtosensor reader 20, while the second photodetector 10b includes a second pohtodetection circuit LS2 outputting a second output signal Sb to the pohtosensor reader 20 and a light-reducing means. The photosensor reader 20 includes a photodegradation factor calculator 21 calculating a photodegradation compensation factor K, a photodegradation rate calculator 22 deriving a photodegradation rate D based on the pohtodegradation compensation factor K, and a light signal outputting unit 24 outputting a light intensity signal S based on the pohtodegradation rate D.

Description

200919400 " Description of the Invention: [Technical Field to Which the Invention Is Ascribed] The present invention relates to a display device. [Prior Art] A light quantity detecting circuit is known as a technique in which a current is applied to a capacitor for detecting a voltage by a voltage between the two ends of the capacitor. And the "patent literature", the amount of light (for example, the reference value is proportional to the leakage current of the body and the amount of light received), but the sensitivity of the leakage current value is first! The sensitivity will decrease due to light exposure. Therefore, The accuracy of detecting the amount of light of the light amount detection electric power described in the above Patent Document 1 is lowered. The decrease in the degree of sputum sputum causes the 乂 to prevent the decrease in the accuracy of the detection, and it is known that the generation of the enamel film transistor In the method of the present invention, the present invention is disclosed in Japanese Laid-Open Patent Publication No. Hei. No. 2006-29832. In the photoelectric conversion element described in Patent Document 2, you have special manufacturing conditions, which leads to an increase in manufacturing cost. Display device fabrication 2: device, or manufacturing display device and photo sensor in the same device: = 320535 200919400 = with: the process of driving the transistor of the device is common, so it is necessary to add or make a clothing red H. (4) Condition setting. (Means for Solving the Problem) The present invention has been developed in order to solve at least a part of the above problems, and is realized by the following types or application examples. The display device of the example has a display device having a display area of a switching element for each pixel on the substrate, and [2: a measuring unit, a second light detecting unit including the second photo sensor, and a light detecting unit. The purchase unit outputs a light amount detected by the first light detecting unit and the second light as a light amount signal; a dimming means to at least a J stack of the tilt detector; 3: a sensor or the second a light-sensing field, and causing a person to strike the first light sensing; (6) the amount of light of the sensor is different; and the fifth light of the first light detecting is incident on the incident light of the first photo sensor The first output of the news is 5 tiger's rim 5 sound τ, +* t measuring the road · a +, - The first light detection of the first sensor reading section is just described. The ^2 light detecting unit has a second output signal obtained by incident light from a human sensor. Output to the second part of the above-mentioned ^ sensor reading section. 丨 丨 灿 灿 I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I I It belongs to the first round of the signal number, and the other is the measurement ratio of the ratio between the two rounds of the signal, and the positive: number is calculated. The light deterioration correction coefficient is the aforementioned measurement ratio: the foregoing initial state of the second measurement The ratio between the initial ratios of the measurement ratios; the photo-degradation rate calculation unit derives the first or second round-out signal based on the photo-degradation correction system: 320535 200919400 V, and converts the sheep according to the photo-deterioration rate. , and the first news that the output of the meter 4 & state of the light signal signal board is ^ first or second output material to output. For example, the Ϊ = towel can be the first and second output signals of the first and second output signals, and the first or second output signals of the initial state are not correct. Therefore, the display device of the degree correction function can be used. The feed is further reduced, and the k, 1 and second photosensors of the first and second photosensors and the display device can be made. So it can reduce costs. [Applicable Example 2] In the display skirt described above, the light reduction of the third light is to reduce the amount of light incident on the ith photosensor; and the second light reduction means is to reduce the human incidence. The amount of light of the second photosensor is higher than the rate of decrease of incident light due to the first dimming means. I - this can reduce the aperture of the first photo sensor and the second photo sensor, so that the photodegradation speed of each photosensor can be delayed. Therefore, the time until the ratio between the first output signal #U and the second round of the signal is no longer changed due to the progress of the light deterioration of the respective photosensors is not sufficient. According to this configuration, it is possible to provide a display device capable of extending the life of the correction. Further, in the above display device, the relative spectral transmittance of the ith dimming means and the second dimming means is preferably equal. In this case, it is possible to suppress the fluctuation of the amount of light deterioration of the first photosensor and the 320535 7 200919400 second photo-sensing stolen due to the difference in incident light. This is because the amount of photo-deterioration is determined by multiplying the spectral characteristics of the light emitted by the person of each photosensor by the spectral sensitivity of each photo-sensing, by using a dimming means that is equivalent to the split-light penetration. It is possible to suppress fluctuations in the amount of photo-deterioration caused by the difference in incident light. Therefore, it is possible to provide a display capable of performing stable correction. [Application 4] In the above display device, it is preferable that the dimming means is incident on the first! A light-shielding member that blocks a part of the light of the photo sensor or the second photo sensor. Thereby, the light incident on the first photosensor or the second photosensor can be dimmed. Therefore, since the first or second output signals in the initial state can be calculated from the first and second output signals and the initial ratio prepared in advance, the first and second optical (four) structures can be changed without changing the structure. A display device with sensitivity correction function and extended calibration life. [Application Example 5] In the above display device, the dimming means is preferably a dimming member that diffracts light incident on the first photosensor or the second photosensor, and The aforementioned light shielding member. +, f, the light incident on the first photo sensor or the second photo sensor, the ', the light source, the first and second output signals, and the ratio prepared in advance can be used to calculate the initial stage. In the state of the first or second output signal, the structure of the second photo sensor is further lowered, and a display device having a sensitivity calibration function and extending the correction life is realized. In the upper phase display device, the photo-degradation rate calculation unit is configured to compare the photo-degradation correction coefficient with the photo-degradation rate by 320535 8 200919400 and a look-up table (l00kuptable). , :: The photo-degradation correction coefficient is a function of the variable to indicate the photo-deterioration rate. Two: The second is a complex mathematical formula, and the circuit scale becomes larger. The increase in the calculation unit and the increase in power consumption. Circuit of photodegradation rate =: Table = function 'The display device which does not require a large-scale force is sufficient to suppress the manufacturing cost and to reduce the power consumption. [Applicable Example 7] In the display device described above, the photo-degradation rate calculation unit is When the correction coefficient is not included in the look-up table, it is preferable that the optical degradation rate is derived by interpolation of the photo-degradation correction coefficients on the two look-up tables. By borrowing a shirt (4) corresponding to any of the light-degrading correction coefficients not included in the lookup table, it is possible to provide a display device that reduces the look-up table and suppresses the amount of data. [Application Example 8] In the display device described above, the first photosensor and the second photosensor are preferably thin film transistors, and have electric power applied to both ends of the front C thin electric body. Celebrate the capacitor for charging. Therefore, the potential charged in the capacitor changes due to the amount of incident light incident on the photosensor and the amount of dimming incident light, so that a % bit can be provided as the output signal of the brother 1 and the brother 2 to the light. A display device that the sensor reads. [Application Example 9] In the above display device, the i-th and second-round output signals are preferably obtained by a photocurrent flow rate or a voltage fall time due to charge and discharge of electric charge to the capacitor. 320535 9 200919400 By this, it is possible to provide a display device capable of correcting the correction coefficient in the light sensor reading portion. The light signal after the exit of Han [Applicable ίο] in the above display device, ; And the second loser... 匕 coefficient calculation unit ψ ^., ^ ° 唬 唬 对 对 对 运算 运算 运算 运算 对 对 对 对 对 对 对 对 对 对 对 对 对 对 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The photo-deterioration correction coefficient is compared with the logarithm of the logarithm of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity of the singularity === After the signal of the logarithm of the logarithm is corrected for the logarithm of the logarithm; the first or second output signal of the corrected logarithm is converted back to a real number and rotated. This can be used to increase the reading of the light sensor reading section; 5. The circuit of the visitor's threshold and the dividing circuit are replaced by the circuit of adding and subtracting, so it can be provided - Yuelu, * know Shiyan _ This is a display device that is small enough to reduce the size of the circuit and suppress 4 power consumption. In addition, ρ m j reduces the manufacturing cost. [Application 11] In the above display device, a photo-electric material layer is provided in the printing region. w ',; H, not, in the photodetector to detect the incident light of the photoelectric material layer 'thus, can provide a kind of appropriate illumination of the library, the display of the illuminating amount of the display No device. Tfim12] is placed in the upper part of the display, and the first light (four) part and the edge are arranged side by side at least. The outer periphery of the display area can be used in the place where only the (four) near display (4) can be performed and the detection accuracy of 320535 10 200919400 can be improved. Further, by arranging the first light detecting unit and the second light and the I5 in parallel, it is possible to suppress fluctuations in the characteristics of the first light sensing and the second photo sensor, and it is possible to further improve the detection accuracy. In the above display device, the W-light detecting unit and the just-described second light detecting unit are preferably arranged alternately on at least one side along the display region edge. In this case, it is possible to suppress the irradiation of the i-th photosensor and to reduce the second detector and the second photo-sensing = use case 14 in the above display device, the aforementioned! The light detecting unit is preferably disposed in a portion of the pixel Δ by the light detecting unit, whereby the amount of light irradiated to the display region can be directly detected. Therefore, $ can improve the accuracy of detection. \ \ Size ifi example ^ in the description of the installation f, the aforementioned first light sensor Ge and so on. The sum of the size of the tenth and the second photosensor is preferably: ^4: quasi=the light receiving area of the photosensor is equal, because (4) the above-mentioned display device, the aforementioned dimming means is ideal A color filter or a polarizer or a phase difference plate. Since the board or the board can be co-operated with the process of the color wheel or the polarizing plate of the conventional display device, the light reduction means can be performed in a simple step. Therefore, the manufacturing cost can be reduced. [Application 17] In the display device of the above 4, the light shielding member is preferably a black matrix, preferably 320535 11 200919400. Therefore, the formation of the black matrix as the light-shielding member can be made common to the process of the black matrix provided in the general display device, so that the black matrix can be manufactured in a convenient step. [Embodiment] (4) The company can reduce the manufacturing cost. - The following description of the display device of the present invention will be described using the drawings. In addition, this = (4) is an aspect which shows this invention, and (4) is restrict|limited by this invention, and can be arbitrarily changed in M. 4 In addition, in the following figures, the composition of the Ύ 〜 ~ H ^ 溆 德 && , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , different. [First Embodiment] θ _ Fig. 1 shows a semi-transmissive liquid corona pain device of the first embodiment of the present invention (display device/electric well and resident 电's electric esoteric device) The top view of the array substrate is shown. Figure 1 shows the perspective filter to I, ,, . The water jacket is not in the picture. Fig. 2 #显千 The first pixel of the array substrate of Figure 1 is a top view of the scratched molybdenum ' ' ' / Ν ^ ττττττ, home f injury. Fig. 3 is a cross-sectional view showing the ΙΠ-ΠΙ line of Fig. 2. The array substrate AR (refer to FIG. 3) and the color filter substrate (FIG.) 'the array substrate AR is attached to a transparent substrate 1002 formed of a rectangular transparent insulating material such as a glass plate, and the φ is formed into various wirings. In the same manner, the color filter substrate CF is formed on a transparent substrate 1010 formed of a rectangular transparent insulating material, and various wirings and the like are formed. In the case where the aligner and the substrate CF are opposed to each other, the ridges are larger than the color filter substrate cf by 320535 12 200919400 ', such that the protrusions 1002A having a predetermined space are formed. A sealing material (not shown in the drawings) is attached to the outer periphery of the array substrate AR and the color filter substrate 〇ρ, and a liquid crystal (electro-optical material) 1014 (refer to FIG. 3) and a spacer are sealed inside. (Omitted in the drawings). The array substrate AR has opposite short sides 1〇〇2&, ! (8) Holes and long sides 1002c, l〇〇2d' One short side 1002b is a protruding portion 1002A, and the protruding portion 丨002A is mounted with a semiconductor wafer Dr' for the source driver and the gate driver on the other short side 1〇〇2a, the first light detecting unit 10a and the second light detecting unit 10b are disposed. Further, a backlight (not shown in the drawings) as a light-guiding means is provided on the back surface of the array substrate AR. This backlight is controlled by an external control circuit (not shown in the drawings) based on the outputs of the first light detecting unit 10a and the second light detecting unit 1b. The array substrate AR is on the side opposite to the color filter substrate CF, that is, the surface in contact with the liquid crystal, and has the following: a plurality of gate lines gw extending in the lateral direction (the x-axis direction) and arranged at predetermined intervals; and insulated from the gate lines Gw and extending in the longitudinal direction (Y-axis direction) of the first drawing A plurality of source lines arranged in a predetermined interval. The source line SW and the gate line GW are wired in a matrix shape, and each of the regions surrounded by the gate line GW and the source line SW is formed with a scan signal from the gate line GW. The TFT which is an ON element (refer to FIG. 2) and the pixel electrode 1A26 which is supplied with an image signal from the source line SW via the switching element (refer to FIG. 3). These regions, which are surrounded by the gate line GW and the source line sw, constitute a so-called pixel, and a region having a plurality of pixels is a display region DA. Further, the switching element uses, for example, a thin film transistor (τρτ). 320535 13 200919400 Each gate line GW and each source line SW extend outside the display area DA, that is, to the frame edge area, and are connected to a driver Dr composed of a semiconductor wafer such as an LSI. Further, the array substrate AR is arranged on the long side 1〇〇2d side of one of the first and second photodetecting circuits LS1 and LS2 of the second optical detecting units i〇a and i〇b. The wirings u to L4 are connected to the terminals belonging to the contact with the external control circuit 5A. The pull-out wiring L1 constitutes a first source line, the pull-out wiring L2 constitutes a second source line, the pull-out wiring L3 constitutes a drain line, and the pull-out wiring L4 constitutes a gate line. The external control circuit 50 has a photo sensor reading unit 2 and a potential control circuit 30. The photo sensor reading unit 20 is connected to the terminals τπ and T2, and the potential control circuit 30 is connected to the terminals T3 and T4. . The potential control f-channel is supplied to the first and second photodetecting sections 〇a, and * by the quaternary electric current and the gate voltage, and is rotated from the first and second photodetecting sections 1Ga and 1Qb. The signal is rotated out to the light, and the detector reading unit 2G. Thereafter, the backlight omitted in the drawing is controlled by the light quantity signal ' from the photo sensor reading unit 2'. The driver Dr on the transparent substrate 1002 may be replaced by a chip having a driving cries, a photo sensor reading portion 2G#. Referring to FIG. 2 and FIG. 3, a plan view of one pixel portion of each of the pixels and showing the second image display array substrate will be described. FIG. 3 is a cross-sectional view showing the III_I line of FIG. Figure. A display area μ on the transparent substrate of the array substrate AR, 320535 14 200919400 The gate lines GW are formed at equal intervals and in parallel, and a gate electrode g of a TFT constituting the switching element is extended from the problem line (10). Further, at a substantially central portion between adjacent gates and lines GW, an auxiliary capacitance line 1G16 is formed in parallel with the open line GW, and the auxiliary capacitance line i (four) is formed with a width ratio auxiliary capacitance line 1 ( ) 16 is also wide auxiliary capacitor electrode 1〇17. Further, 'the entire surface of the transparent substrate 1002' is covered with a transparent insulating material such as nitrogen cut or oxygen cut to cover the gate line GW, the auxiliary capacitance line, the auxiliary capacitor electrode 1〇17, and the open electrode g. The opening insulation flag formed is 1 〇18. In the inter-electrode G, a semiconductor layer 1〇19 formed of amorphous austenite or the like is formed on the interlayer gate insulating film 1018. Further, on the interpole = edge film 1G18, 'the plurality of source lines and the gate line GW are mutually connected from the source line SW' to contact the semiconductor layer 19 so as to extend the source electrode of the TFT. s, in addition, the electrodeless electrode d formed by the same material of the source and the source electrode 3 is in contact with the semiconductor layer _ in the manner of being disposed on the gate insulating film as the polar line GW and the source line The area surrounded by the SW is a layer of mo and °, and is formed in each pixel by the idle electrode G, the closed-electrode insulating film 1018, the half 9, and the primary electrode S. At this time, the auxiliary capacitance of each pixel is formed by the auxiliary capacitor electrode 1G17. A protective insulating film (also referred to as a purification film) in which the source lines sw, the TFT, and the interpolar insulating film are cut out, and the board 1 (8) 2 is laminated, for example, with an inorganic insulating material. 1020. Here, the protective film 320535 15 200919400 is covered with the entire transparent substrate 1002, and an interlayer film (also referred to as a flattening film) 1021 formed of, for example, an acrylic resin containing a negative-type light-receiving material is laminated. The surface of the interlayer film 1〇21 is formed by the reflection portion 1〇2=; fine irregularities are formed (not shown in the drawings), and are formed flat in the penetration portion 1〇23. Further, on the surface of the interlayer film 1〇21 of the reflecting portion 1022, a reflecting plate 1〇24 made of aluminum or an aluminum alloy is formed by sputtering, and the protective insulating film 1020, the interlayer film 1021, and the reflecting plate 1〇24 are formed. A contact hole 〇 25 is formed at a position corresponding to the gate electrode D of the TFT. Further, in each of the pixels, on the surface of the reflecting plate 1B, the contact hole 1025, and the surface of the interlayer film 1〇21 of the penetrating portion 1〇23, for example, ITO (Indium Tin Oxide) is formed. ) or IZ〇 (Indium Zinc)

The pixel electrode 1〇26 formed by Oxide: indium zinc oxide is disposed on the upper layer of the pixel electrode 1026 so as to cover all the pixels, and an alignment film is laminated (not shown in the drawings). Further, the color filter substrate CF is formed on a surface of the transparent substrate 1010 formed of a glass substrate or the like, and a light shielding layer is formed so as to face the gate line Gw of the array substrate AR and the source line SW (in the drawing) Occasionally, a color filter layer 1〇27 formed of, for example, red (R), green (G), and blue (B) is provided corresponding to each pixel surrounded by the light shielding layer. Further, a top coat layer 1028 is formed on the surface of the color filter layer 1〇27 corresponding to the position of the reflection portion 1022, and the surface of the top coat layer 1〇28 and the position corresponding to the penetration portion 1〇23 are formed. On the surface of the color filter layer 1027, a common electrode 1〇29 and an alignment film (not shown in the drawings) are laminated. The color filter layer 亦 27 is also suitably used in combination with a color filter layer such as 靛320535 16 200919400 (C), magenta (yellow), yellow (Y), etc., in the case of monochrome display, there is also no filter set. The case of the color layer. The array substrate AR and the color filter substrate CF' having the above-described configuration are bonded together (the drawings are omitted), and finally, the liquid crystal 1014 is sealed in a region surrounded by the two substrates and the sealing material. Thereby, a transflective liquid crystal display device 1 can be obtained. Below the transparent substrate 1A2, backlights or sidelights having a light source, a light guide plate, a diffusion sheet, and the like, which are generally omitted from the drawings, are disposed. At this time, if a reflective liquid crystal display panel is provided to cover the entire lower portion of the pixel electrode 1026, a reflective liquid crystal display panel can be used. Backlight or sidelight. Fig. 4 is a block diagram showing the configuration of the light amount detecting device 1 formed by the first light detecting unit 10a, the second light detecting unit 1b, and the photo sensor reading unit 2G. The first photodetecting unit 10a has an i-th photodetecting circuit LS1, and the second detecting unit 1Gb has a second new measuring circuit LS2. The first output signal from the i-th photodetection 2 and the second output signal Sb from the second photodetection circuit LS are output to the photosensor reading unit 20. The rate-of-recovery unit 20 has a deterioration coefficient calculation unit 2, and the number-transportation unit 21 is connected to the first-and second-second light-detecting circuit (3), and the other is: the ang1 first measurement circuit LS1 and the circuit LS2 and s memory circuit

Sa and the second round of the signal are read = the magic wheel is out and the light is converted into a light sensor. 320535 17 200919400 : Spring: the first photoelectric flow and the second photoelectric flow. Then, the measurement ratio belonging to the ratio between the first current amount and the second photoelectric flow rate is calculated, and the light deterioration correction coefficient _ is lost, and the light deterioration correction coefficient is the memory of the memory circuit 23 The deterioration coefficient calculation unit 输出 outputs the photo-degradation correction coefficient κ to the photo-degradation rate calculation unit 22 (3, in addition, the second photo-electricity flow is rotated out after the ratio of the ratio of the initial state to the initial ratio of the preparation) The photo-degradation rate calculation unit 22 is connected to the deterioration system I calculation unit 21 and the memory circuit 23. The second photo-electricity is included in the photo-degradation correction coefficient, the disk number = the flow rate, and the initial state. The photo-deterioration rate of the ratio between the flow rates = the target lookup table (1〇Gk up table), and the photo-degradation rate d corresponding to the photo-degradation correction coefficient κ outputted from the degradation coefficient is obtained. Then, the photo-degradation rate D to be taken out is output to the optical signal output unit %. The optical signal output unit 24 is connected to the degradation system calculation unit 22. After the .1 1 and the light 4 /丨22, from 4 The second photoelectric flow rate output by the coefficient calculation unit and The photo-deterioration rate of the photo-deterioration rate of the output of Iqiu, m η, and P is transmitted to the second light-ray method in the initial state. The second photoelectric form of the state is used as the light amount signal S corresponding to the amount of incident light and is rotated. Fig. 5 shows the first and second 氺a patterns. The circuit structure of the first detecting portion 1〇a, 1〇b The first light detection unit l〇a is the first; the optical measurement interface of the brother 17" detection circuit LS1, which has the remainder -. Youyi's thin film transistor "TFT100"), the capacitor is crying 11Λ L 乂 略 % It is σπ and the switching element 120. The TFT 100 is connected in parallel with the capacitor Π0. ρ ρ 1100 ^ Fine connection, that is, the source portion 101 of the TFT 100 and the electrode of the capacitor 320535 I? 200919400 container 11 0! The electrode 112 of the electrical container lio is electrically connected, and the pole portion 102 of the T100 is electrically connected to the output 踹+. The source part 丨〇1 is connected to the electrode ill. It is 14 〇, ^ 70 pieces of 120 connected to the power terminal. In addition, the pull-out wiring L1 and the terminal T1 of the TFT 1 are electrically connected to the electrode 112 of the 汲 terminal 191 w, and the terminal 191 is connected to the terminal through the first 圃 pull-out wiring L3 and the terminal. Sexual connection. (4) Terminals are connected: = 1st light inspection material (10) (4) Ground, when the time is ^T3 and ^^ In addition, the interpole part 1〇3 of the tFT100 and the idle terminal 19〇 are also the second part of the first part 10b The optical wheel is a thin film transistor 2 〇〇 (hereinafter referred to as "TM 〇") of the second presensor, a capacitor 21 〇, a switching element 22 〇, and a color filter (light reducing member) 25 作为 as a subtraction section. The filter and color filter 25G is formed in a region which is different from the TFT 200 in a plan view, and reduces the amount of incident to the Ding. The TFT 200 is connected in parallel with the capacitor 210. That is, the drain portion 202 of the capacitor 210 is electrically connected to the electrode portion 211 of the source portion 201 and the capacitor 211 of the capacitor 210. The color filter 250 is disposed on the first incident side of the TFT 200, and the TFT 2 detects the light dimmed by the color filter 250. The source portion 201 and the electrode 211 are connected to the wheel=terminal 240' and are connected to the power terminal 23 via the dielectric switching element 220. The third wheel terminal 240 is electrically connected to the terminal T2 via the pull-out wiring L2 of FIG. In the following five paragraphs, both the first light sensor and the second light sensor are collectively referred to as "photosensors". 320535 19 200919400 In addition, the drain portion 202 of the TFT 200 and the electrode ii2 of the capacitor 210 are electrically connected to the gate terminal 191. The 汲 terminal 191 is a terminal common to (8), and is electrically connected to the terminal T3 via the pull-out wiring L3 of Fig. 1 . Further, the gate portion 203 of the TFT 200 is electrically connected to the gate terminal 190 common to the TFT 100. The output terminal 240 is connected to the terminal Τ2 through the pull-out wiring L2 of FIG. 1 . The 汲 terminal 19m is electrically connected to the terminal T3 through the pull-out wiring L3 of the j-th diagram. The gate terminal 19 is electrically connected to the terminal T4 via the wiring line L4. Fig. 6 is a schematic cross-sectional view showing the first and second photodetecting sections 1a and jb, Fig. 6(4) showing the first photodetecting circuit LSI, and Fig. 6(b) showing the second photodetecting Circuit LS2. "First, explain Figure 6 (4). On the transparent substrate 1〇〇2, a solder 100, a capacitor 11A, and a switching element 120 which constitute the first photodetecting circuit LS1 are formed. On the transparent substrate 1002, a gate portion 103 of the TFT 100, an electrode 112 of the capacitor no, and a gate portion 123 as a thin film transistor of the switching element 12A are formed. The gate insulating film 72 is laminated so as to cover the gate portion 1〇3, the electrode H2, and the gate portion 123. A semiconductor layer HM is formed over the gate portion 1A3 at the gate electrode (four) 72', and a semiconductor layer 124 is formed above the gate portion 123. The gate insulating film 72 is formed with a conductive film 173 connected to the drain portion 1〇2 of the semiconductor layer 1〇4, a conductive film m connected to the source portion (8) and the (10) portion 122 of the semiconductor layer U4, and a source thereof. The conductive film 175 is connected to the pole portion 121. The region of the electrode film 174 that is electrically connected to the electrode 112 constitutes a capacitor in. σ A protective insulating film 76 is laminated so as to cover these conductive films 173, 174, and 175. The black matrix 125 is formed on the protective insulating film 76 in such a manner as to cover the semiconductor layer of the switching element 12A in a planar manner. θ The first photodetecting circuit LS1 is formed on the same substrate as the display region DA, so that the gate insulating film 72 and the array substrate AR of the first photodetecting circuit LS1 can be shared with the portion of the array substrate AR. The gate insulating film is deleted, the protective edge film 76 of the i-th photodetecting circuit (3) and the protective insulating film 1〇2 of the array substrate AR, the conductive films 173, 174, 175 of the photodetecting circuit LSI and the array substrate ar The source electrode S, the drain electrode D, and the semiconductor layers 104 and 124 of the second light detecting circuit 1si and the semiconductor layer 1〇19 of the array substrate AR and the like. The next five children are shown in Figure 6 (b). The TFT 2A, the capacitor 21A, and the switching element 210 constituting the second photodetecting circuit LS2 are formed on the transparent substrate 1'2. On the transparent substrate 1〇〇2, a gate portion 203 of the TFT 2 turns, an electrode 222 of the electric valley state 210, and a gate portion 223 belonging to the switching element 220 of the thin film transistor are formed. The gate insulating film 72 is laminated to cover the gate portion 203, the electrode 212, and the gate portion 223. On the gate insulating film 72, a semiconductor layer 204 is formed above the gate portion 203, and a semiconductor layer 224 is formed above the gate portion 223. The gate film 72 is formed with a conductive film 273 connected to the drain portion 2〇2 of the semiconductor layer 2〇4, and a conductive film 274 connected to the source portion 201 and the drain portion 222 of the semiconductor layer 224; The conductive film 275 is connected to the source portion 221 . The region of the electrode electrode 274 of the electrode 21 320535 200919400 210 that is attached to the electrode 212 constitutes a capacitor 211. An insulating film 76 is laminated to cover the conductive films 273, 274, and 275. The black matrix 225 is formed on the protective insulating film 76 in such a manner as to cover the semiconductor layer of the switching element 22A in a planar manner. A color filter 250 opposed to Ding Yang (9) is formed on the color filter substrate CF disposed opposite to the protective insulating film 76. The color filter 250 is formed in a region overlapping the TFT 200 in a plan view. The incident light incident on the second photodetecting circuit LS2 is dimmed by the color filter 25A to the first light detecting circuit (3) to be 1/n (n > 1). The second photodetecting circuit LS2 is formed in the second photodetecting circuit LS2. Since it is on the same substrate as the display area DA, it can be shared with the part of the process of the array substrate AR. For example, the gate insulating film 72 of the second photodetecting circuit LS2 and the gate insulating film 1018 of the array substrate AR, the protective insulating film 76 of the second photodetecting circuit Ls2, and the protective insulating film 1〇2 of the array substrate 11 are The conductive films 273, 274, and 275 of the second photodetecting circuit LS2 and the array electrode are: the electrode S, and the electrode d, and the semiconductor layers 204 and 224 of the second photodetecting circuit LS2 and the semiconductor layer of the array substrate AR 1019 and so on. The light amount detecting device 显示 of the display device 1 of the present embodiment has a function of correcting the sensitivity of the photosensor which is reduced by photodegradation. The principle of sensitivity correction of the photo sensor will be described below. First, light is applied to the first and second photodetecting sections 10a and 10b which have charged the capacitors 110 and 21 to a predetermined potential. As a result, leakage current is generated in the TFTs 100 and 200, so that the potentials of the capacitors 11A and 21〇 are lowered with time by 320535 22 200919400 此时, and the capacitor 11 is output from the first photodetecting unit 10a.

Si 2: the potential is the first output signal 仏, and the potential of the electrode 211 from the second light detecting unit Sb = thief 210 is used as the second output signal unit 1 : first t detector reading unit 2 , The signal of the potential that is rotated by the second light detection is read as the light amount signal ▲ 'Yujin> iTk is processed and output as a light amount signal. Therefore, in the following description, it is explained that the photocurrent used in f d can be replaced with the master value of the photosensor reading unit 20 in accordance with the calculation of the photocurrent. Regarding the sensitivity correction of the photosensor, first, the number of light==, and the photo-degradation correction coefficient κ belongs to the measured/degraded/photodetection circuit LS1! The ratio between the ratio of the ratio between the photocurrent and the second current of the second photodetecting circuit m and the initial word of the measurement = the initial state. Then, the photo-deterioration rate D of the ratio between the t of the second photodetecting circuit ls2 after the deterioration and the second photo-electricity of the second photodetecting circuit (10) in the initial state is calculated by the calculation. Then, from the photo-deterioration rate d, the second light-receiving signal S of the second #Ray, * light of the second photodetecting circuit LS2 in the initial state is output. The second pre-current is used as the calculation method for explaining the photo-degradation correction coefficient κ. Figure 7: A diagram of the photocurrent Γ as a function of the amount of incident light B. In Fig. 7, ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, Ib(L) ' From these functions, the initial ratio of the ratio between the first photocurrent Ia(L) and the second photocurrent Ib(L) which are inferior to 320535 23 200919400 (initial state) can be obtained. The photocurrent system increases in proportion to the amount of incident light. When the initial sensitivity of the first photodetecting circuit LS1 is XaO and the initial sensitivity of the second photodetecting circuit LS2 is XbO, the first photodetecting circuit LS1 The photocurrent Ia (L) and the second photocurrent Ib (L) of the second photodetecting circuit LS2 are as follows.

Ia(L)=XaO . L Ib(L)=XbO · L Therefore, when a certain amount of light L0 is incident as incident light, the amount of light of the dimming incident light of the second photodetecting circuit LS2 becomes LO/n, and therefore, the amount of light L0 The first photocurrent Ia (LO) of the first photodetecting circuit LSI and the second photocurrent Ib (L0/n) of the second photodetecting circuit LS2 are as follows.

Ia(LO)=XaO . L0 Ib(LO/n)=XbO · (LO/n) Therefore, the initial ratio is Ia(LO)/ Ib(L0/n)=n · (XaO/Xb〇). Since the initial ratio is not affected by the incident light amount L0 and becomes a function of the initial sensitivity XaO, XbO, and η, the measurement ratio of the arbitrary incident light amount L can be set to the initial ratio. Next, the measurement ratio at the time of deterioration is calculated. Fig. 8 is a view showing a function of the photocurrent I after deterioration as a function of the amount L of incident light. In the eighth diagram, the function Ia (L) of the first photocurrent in the initial state, the function Ib (L) of the second photocurrent in the initial state, and the first photocurrent of the first photodetecting circuit LSI after the deterioration are shown. Function Iaa(L), and 24 320535 200919400 of the second light detecting circuit LS2 after deterioration - a function ibb(L) of the optical motor. Fig. 8 is a graph for determining the deterioration/photometry of the light sensor due to deterioration due to light exposure, so that the photovoltaic f1 layer gradually decreases relative to the initial state. Such a decrease in the light sensitivity can be obtained by a function R(p) (<1) which is a cumulative light 属于 which is an integrated value of the amount of light irradiated from the initial state. When the accumulated light amount of the work light detecting circuit LS1 after a certain period of time has been set to P, the cumulative light amount of the second light detecting circuit LS2 is p/n. Therefore, the sensitivity of the first photodetecting circuit Ls丨 after exposing the light having the accumulated light amount p is such that the sensitivity of the second photodetecting electric 4 LS2 after exposure of the light of the accumulated light P/n is set to Xbl can be expressed as follows.

Xal= R(p) . Xa〇Xbl= R(p/n) · Xb〇, the function Iaa(L)′ of the second photocurrent of the first photodetecting circuit LS1 after degradation and the second after the deterioration The function Ibb(L) of the second photocurrent of the photodetecting circuit ls2 is as follows.

Iaa(L)=Xal · L= R(p) . χα〇. L Ibb(L)=Xbl · L= R(p/n) · Xb〇. L Since there is no light-reducing means such as iterometer 25〇 Therefore, the cumulative light 1 of the first light detection and the path LSI is larger than the cumulative light amount of the second light detecting circuit LS2. The deterioration of the TFT1 属于 belonging to the first photo sensor is relatively fast, and the decrease in the first photocurrent Iaa (L) is large. Therefore, when a certain amount of light 11 is incident as incident light, the amount of light of the dimming person of the second photodetecting circuit LS2 is u/n, and therefore, the first photocurrent Iaa of the first photodetecting circuit LSI of the amount of light u 320535 25 200919400 (L1) and the second photocurrent Ibb (L1/n) of the second photodetecting circuit LS2 are as follows. Iaa(Ll)=Xal · Ll= R(p) · XaO · LI Ibb(Ll/n)=Xbl · (Ll/n)= R(p/n) · XbO · (Ll/n) The ratio is Iaa(Ll) / Ibb(Ll/n) = n · (R(p) / R(p/n)) . (XaO/ XbO). This measurement ratio is not affected by the incident light amount L1, and the same measurement ratio can be obtained regardless of the arbitrary incident light amount L. From the initial ratio thus obtained and the measured ratio after deterioration, the photo-degradation correction coefficient K=(Iaa(Ll)/ Ibb(Ll/n))/(Ia(L0)/ Ib(L0/n))=R is derived. (p) / R(p/n) as a function of the cumulative amount of light p. By this light deterioration correction coefficient K, the deterioration progress of the TFTs 100, 200 can be known. Next, the light deterioration rate D will be described. The photo-deterioration rate D is expressed as D between the Ibb (Ll/n) measured when the incident light is incident as the dimming incident light, and the second photocurrent Ib (Ll/n) in the initial state. = Ibb(Ll/n)/ Ib(Ll/n)=R(p/n). This value is not affected by the amount of incident light, but by the value determined by the deterioration state. The photo-degradation rate D corresponds to the photo-degradation correction coefficient K, and the light-degradation rate D can be obtained from the photo-degradation correction coefficient K by obtaining the correspondence relationship in advance. Further, from the photodegradation rate D thus obtained and the measured second photocurrent Ibb(Ll/n), the second light in the initial state can be calculated by Ib(Ll/n) = Ibb(Ll/n)/D. Current Ib (Ll/n). By the above steps, the second photocurrent Ibb(Ll/n) 26 320535 200919400 after deterioration can be corrected to the second photocurrent ib(u/n) in the initial state and rotated, and then described in the present invention. The light touched by the display device. The action when this photocurrent is corrected. Feel 4 sets #且:9: The flow chart of the correction of the visible current. In the ninth figure, the deterioration coefficient calculation unit 21 t calculates the 敎 ratio, and the memory system 23 reads the optical deterioration correction system of the ratio of the initial ratio ^ : = period; H body electric path 23' read Step S3 corresponding to the photo-deterioration rate D of the number K; from the read light; = system output 弁 4; 'servo photo-deterioration rate D', the step S4 of pre-named photocurrent is carried out And the photocurrent derived by the calculation is used as the light amount signal 3 of the incident light and is outputted as V/first. In step S1, the capacitors 11A and 21〇 are charged to the potential P to be the incident light of the light amount L1 and The dimming incident light of the amount of light u/n is incident on the TTT100 and the TFT2, and a photocurrent is generated in the TFTs 1 and (9) (the leakage current h is such that the potential of the capacitors 110 and 210 is low. The two light "portions 1"a and l〇b output the potentials of the capacitors 110 and 210 at this time, respectively, as the first output signal Sa and the second output signal Sb in the deterioration coefficient calculation unit 21. The potential signals of the first output signal Sa and the second round output signal Sb rotated by the second light detecting unit 1〇&, 1〇b are read, And converted to Tm (9), fine photocurrent. The potential difference between the potential system charged in the electric grid, 110, 210 and the source of the TFT 100, 200 is equal. Since the amount of incident light is larger, the photocurrent is more and more, Therefore, the potential reduction of the capacitors 110 and 21 会 becomes large. Relatively 27 320535 200919400, since the amount of incident light is smaller, the photocurrent is less, so that the potential reduction of the capacitors no and 21 会 becomes smaller. The potential signal after a certain period of time elapses from the irradiation of the incident light can be converted into a photocurrent signal. That is, the lower the potential of the capacitors 110 and 210 belonging to the potential signal, the larger the photocurrent, and the containers 110 and 210 The higher the potential, the smaller the photocurrent. In the deterioration coefficient of the difference portion 21, the potential signal is opposite to the photocurrent.

The signal of the first photocurrent Iaa (L1) and the second photocurrent Ibb (Ll/n) is obtained from the potential signal. L The measurement ratio (Iaa(Ll) / Ibb(Ll/n)) is measured from the first photocurrent laa (L1) and the second photocurrent b (L1/n) thus obtained. Then, in step S2, the ratio (Ia(L〇)/Ib(L〇/n)) is read to the deterioration coefficient calculation unit 21 at the beginning of the memory circuit 23, and the light degradation correction coefficient K is transmitted. =(Iaa(L1)Mbb(L1 /

Ib(L〇/n)) °

In the case of the 己 体 体 电路 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , And the operation ratio is calculated in step S2. Thereafter, the step S3 is performed in step S3, and the error correction coefficient K is output to the photo-degradation rate calculation unit 22 in step S2. In the "light" operation port 22, the light deterioration rate D corresponding to the (four) light-inferior pure coefficient 输 is obtained by referring to the inquiry table stored in the memory circuit 23. Fig. 10 is a diagram showing the measurement data of the photo-degradation correction coefficient K and the photo-deterioration rate D of the light-quantity detecting device 1 of the display device 320535 28 200919400 of the present invention. The axis table ^ photo-degradation correction coefficient Κ, the vertical axis represents the photo-deterioration rate d. If the deterioration is good, the photo-degradation correction coefficient Κ and the photo-degradation rate D are lowered, and the π-light degradation rate D is decreased by The photo-degradation correction coefficient 显现 decreases to about 0.6 or less, and the photo-degradation rate D exhibits a certain value. This means that if the deterioration proceeds to a certain degree of privacy, The second photocurrent ibb is no longer changed. The function curve 500 shown in Fig. 10 is a function of the photo-deterioration rate 〇 based on the photo-deterioration correction coefficient K of the measurement data. The circuit of the function is constructed in the photo-deterioration rate operation In the portion 22, the photo-degradation rate D corresponding to a certain photo-degradation correction coefficient K can be calculated. However, if the irregular function is realized by the circuit configuration, the circuit configuration becomes complicated. In the state, a look-up table is provided which causes the correction coefficient ruler to correspond to the photo-deterioration rate D according to the function curve 500, and is stored in the memory circuit 23. Therefore, it is necessary to have the operation of the photo-deterioration rate D. The complicated circuit can reduce the circuit scale. When the memory is reduced in memory, the value of the photo-degradation correction coefficient 记忆 is stored in the figure. In addition to the sentence table ^, when the value of the photo-degradation correction coefficient κ is not included in the query table 2:: by: using the adjacent data for interpolation calculation, even if it does not contain, - the inquiry table, can also be corrected from photo-degradation The coefficient κ derives the photo-deterioration rate d. 320535 29 200919400 For example, the function of the first graph can be changed, the value of the ==r coefficient κ, the two light-degraded schools === sound, '...i, line-linking Some points, thereby specifying the corresponding light deterioration school that is not included in the mouth The light coefficient of κ is degraded by the positive coefficient κ. The photo-degradation correction system is π π body and 5 'when the positive coefficient Κ is: 2 and . 4 is:: the time is wide corresponding to the light _ degradation rate D. · 2 and U light The average value of the deterioration rate D is used to derive the light D, and the second photocurrent (10) is corrected by the photo-degradation rate tube transmitted by the deterioration rate calculation unit 22, and is corrected by the initial state. The second photo-electricity of the first photo-electricity is obtained by the light-quantity detecting device having the above-described configuration, and the following effects are obtained. In the light amount detecting device, the b-thoracic correction function is corrected from the photo-deterioration correction coefficient κ and the t-th photo-current-removal (6) of the photo-deterioration rate to obtain the initial-state photocurrent Ib(L). Even if the deterioration due to light exposure occurs, the correct light amount signal S can be output. Further, since the first and second photodetecting sections i〇a and 10b do not employ a photoelectric conversion element that performs a sharp rise, the display device can be used in conjunction with the display device. Therefore, the sensor can be emitted in a simple step, and the cost can be reduced. 320535 30 200919400 By storing the lookup table in the memory circuit 23, it is not necessary to have a complicated circuit configuration for the operation of the photo-deterioration rate D, so that power consumption can be suppressed and the circuit area can be reduced, and the manufacturing cost can be suppressed. When the calculated photo-degradation correction coefficient κ is not included in the look-up table, interpolation calculation can be performed using the photo-degradation rate D corresponding to the photo-degradation correction coefficient of the photo-degradation correction coefficient K, thereby deriving the photo-degradation Rate D. This narrows the lookup table and suppresses the amount of data. In the present embodiment, the second photodetecting circuit (10) is calculated by calculation: the second photocurrent Ib(L) in the tender state is used as the light amount signal 8, but it is also possible to detect the thunder TQ-I^ u ...... The first photocurrent in the initial state is omitted as the light amount signal s. In this case, as long as the memory circuit μ is stored, the photo-degradation correction coefficient scale, the IT: first photocurrent 属于 belonging to the ith photodetection circuit (3), and the first photo-clearing "in the initial state", t example The light-reduction rate Da corresponds to the look-up table, and the first photocurrent Ia in the initial state is determined. The measurement of the incident light amount L of the light-quantity detecting device 1 in the form is predetermined (four) continuously. ―: owe 3 = two application, _ child 19 (), can make the curry, 2 〇〇 pair electrician 11 () '21 () of the € position discharge. Then charge the potential % and carry out 测. The device 1 is connected to the outside of the quantity detecting device i, and the light is lighted. The light quantity signal of the non-ancient., °卩衣3 brother light is output to the back, the moon'', and the light is detected from the light amount. The light quantity signal of 1 comes to 320535 31 200919400 » The week is shining. Specifically, if the natural light of the day is bright, the amount of illumination of the backlight is set to be larger. The other side (4) is used in a dark environment. The amount of illuminance of the backlight is doubled == hunting this can be done in response to the illuminance of (4) The liquid crystal display device is described here, but the display area can also be applied to the following display devices, that is, an organic electroluminescence (EL) display device, which will be coated with a twisted ball of different colors. Electro-optical material=Powder display, display device such as plasma display using high-pressure gas-light substance such as ammonia gas or atmosphere. Especially in the t-state of light, it is explained that the color filter is used as the incident sensor. An example in which the light-reducing means of dimming light is provided in the second light detecting portion muscle, but the configuration of the dimming means is not limited to this. - :: Light-reducing means (first light-reducing means, The second light reduction means (the configuration example 1 of the light reduction means) follows the circuit configuration diagram shown in Fig. 11, and the configuration example of the light reduction hand is the same as the above-described first embodiment. The same reference numerals will be omitted, and the description will be omitted, and the different components will be described. As shown in Fig. 11, the first light detecting unit and the first light detecting circuit 糸 are provided with a thin film electric device including a light sensor. The components of the crystal master's underarm are "TFT1") Bright). On the light-in side of the TM, it is set as the first! After the dimming method 320535 32 200919400 Color 530. When viewed in a plan view, the color filter 53 is formed in a region where the 盥 (10) overlaps. The light incident on the color filter 530 is dimmed by the color material used by the color filter 53. Thereby, the light which is dimmed via the color filter 53 is incident on the TFT 100. The TFT 100 detects the dimmed light. The second photodetecting circuit of the second photodetecting unit 10b includes a thin film transistor 2 as a second photosensor (hereinafter referred to as "tft2〇〇") = various elements (defective description) ). On the light incident side of the TFT 2 ,, a filter 55 〇 which is a dimming means for the younger brother 2 is provided. When viewed in a plan view, the color filter is opened in an area overlapping the TFT 200. The light incident on the color filter 550 is dimmed by the color material used by the color picker 550. Thereby, the light that has been dimmed by the 遽 益 50 is incident on the order 2 。. The Ding 2 〇〇 system detects the light after the dimming. . . Therefore, the color benefit 550 is formed such that the rate of decrease (light reduction rate) of incident light is larger than that of the color yoke 530. In order to increase the dimming rate of the incident light, the thickness of the color filter 55G may be formed to be thicker than the thickness of the color filter H 53G, or the concentration of the color material used for the filter color filter 55 may be formed as a ratio. The concentration of the color material used in the color picker L is also concentrated. As described above, the sensitivity correction function described in the first embodiment can be applied by making the dimming rate of the incident light of the smear 55G higher than the dimming rate of the color filter. In addition to the filter, the color 530 and the color filter 550, it is preferable to set the color materials used to be the same type, etc., so that the relative spectral transmittance becomes the same as that of the two dimming means. The color opaques of the 530, 550, and 1 are equal, thereby suppressing fluctuations in the amount of l TFT 200 200 200 200 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 320 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 . In this case, the amount of photo-deterioration is determined by the value obtained by calculating the spectral sensitivity of the TFT1 GG and the spectroscopic characteristic fish TFTHK), and the dimming means having the same spectral transmittance is used. The fluctuation of the amount of photo-deterioration caused by the difference in human light is suppressed. Therefore, a display device capable of performing stable correction can be provided. In order to make the relative spectral transmittance equal, a light shielding member may be used as the light reducing means as another configuration example of the dimming means to be described later. By this, the incidence can be reduced to the first! Since the amount of light of the photosensor is tfti and the amount of light of the TFT2 of the second photosensor, the photodegradation speed of each of (8) and · can be delayed. Therefore, it is possible to extend the time until the ratio between the first output signal and the #th signal is no longer changed due to the progress of the light deterioration of each TFTH20G. In the case of Fig. 12, the case where the light which is dimmed by the photosensors of both is incident and the light which is dimmed only by the photosensor of one of them is incident, » The change in the ratio of the measurement between the 1 output signal and the 2nd output signal. As shown in Fig. 12, when the amount of light incident on the TFT (9) and the TFT 200 is reduced (broken line 2), the ratio after 1 〇 xl 〇 6 (Lx. h) is not changed. Further, when only the amount of light of the TFT 2 incident thereto is reduced (dashed line 1), the ratio after 2xl 〇 6 (Lx. h) is no longer changed. That is, when the amount of light incident on both of the TFTiOO and the TFT 200 is lowered, it is approximately five times the correction life as compared with the amount of light which is only lowered into the TFT 200. Therefore, according to this configuration, a 320535 34 200919400 display device capable of extending the life of correction can be provided. (Configuration example 2 of the dimming means) The following is a description of the configuration example 2 of the dimming means in accordance with the circuit configuration diagram shown in Fig. 13. The same components as those of the first embodiment are denoted by the same reference numerals, and the description thereof will be omitted. The difference between the first and third figures is shown in Fig. 13, and the light detecting circuit of the necropsy detecting unit is used as the light of the younger brother. Various elements of the thin film transistor 100 (hereinafter referred to as "TFT100") of the detector (the description is omitted). The dimming means is not provided on the light incident side of the TFT 100, and the TFT (10) detects the unreduced light. In the second light detecting unit, the photodetecting circuit (10) includes various elements (hereinafter abbreviated as "thin film") as a second photosensor (hereinafter abbreviated as "a thin"). On the human light side of the TFT, a black matrix _ as a light blocking member is provided. This black matrix 660 is formed in a region overlapping the TFT 200 when viewed in plan. In the present configuration example, the black matrix 660 as a mask member constitutes a dimming means. The black matrix 66 is formed of a light-shielding member such as a black resin in the same layer as a color filter not shown. An opening 67 is formed in the black matrix 660. The light toward the TFT 200 is shielded by the black matrix 66, and passes only through the opening 670. Therefore, the amount of light passing through can be reduced. That is, the black matrix 660 having the opening 670 is used as a light reduction means. Thereby, the light that is dimmed by the black matrix 660 is incident on the TFT 2 . The TFT 200 detects the dimmed light. According to the second configuration example, the manufacturing process of the black matrix 320535 35 200919400 as the light shielding member can be common to that of the general display device, so that the manufacturing cost can be reduced in addition to the simple steps and the process of the array. The effect of the implementation mode of the younger brother (Configuration Example 3 of the dimming means) The following is a description of the configuration example 3 of the dimming section in accordance with the circuit configuration diagram shown in Fig. 14. The same configuration as the above-described policy 1 is the same as that of the same embodiment, and the configuration is omitted. As shown in the second aspect, the first photodetecting circuit H (a) of the first photodetecting portion is used as a plurality of elements (hereinafter, not described) of the thin film transistor 100 (hereinafter: ... TFT1〇〇J) of the first photosensor. The color filter of the TFT 100 as the first dimming means. . The 730 system is formed in a region overlapping with the TFT 1 以 in a plan view. The light that has been dimmed by the color picker 730 is incorporated into the dozens of shots (10) to detect the dimmed light. The second photodetecting circuit ls2 of the second photodetecting unit 1b includes a thin film transistor 200 (hereinafter abbreviated as r TFT 200) including two photosensors (not described). On the light incident side of the TFT 200, a color filter 750 as a light-reducing member and a black matrix 76A as a light-shielding member provided on the light incident side of the color filter 750 are provided as the second light-reducing means. In a plan view 4, the color filter 75A and the black matrix 760 are formed in a region where the FT200 is crystallized r- >>. The black matrix 660 is shaded by a black resin or the like on a substrate having a color state of 75 Å. The black matrix 760 is formed with an opening 770. 36 320535 200919400 • The light system toward the TFT 200 is temporarily dimmed by first passing through the opening 77G formed in the black matrix 76A, and then is again dimmed by the color filter 75q. Thus, the TFT2GG detects light that is dimmed by the second dimming means in which the light blocking member and the light reducing member are overlapped. Thereby, the amount of light incident on the tfti (eight) as the second photosensor and the TFT 2 作为 as the second photosensor can be reduced, and therefore, the photodegradation speed of each TM 〇, 200 can be made. Therefore, it is possible to extend the time until the ratio between the output signal and the second output signal is no longer changed due to the deterioration of the light of each of the TFTs 100 and 200. The material can be used to make the light-reducing member and the light-shielding member used as the light-reducing means common to the process of the general display device, so that the light-reducing means can be manufactured in a simple procedure. + In the -dredition, the arrangement of the dimming member and the light-shielding member of the segment is not limited to the 'yoke type filter or configuration example, and other combinations are also possible. In this case, the use of a color filter as a means of dimming is described, and is not limited thereto, and a polarizing plate or a phase dimming member may have the same effect. The plate temple has been reduced to the first (deformation). The electric ^= is the potential of the electrode U1 of the electric valley 110 belonging to the first photodetection circuit (3). The second light detecting circuit LS2 is the capacitor brother: And the first output signal sb of the potential of the electrode 211 belonging to the 钤屮 u 电 电 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 210 However, in the variant of this _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The potential of the electrode hi and the potential of the electrode 211 of the capacitor 210 are derived. Vs is lowered to the time required for the predetermined potential Vc, and the sensitivity is corrected. Here, a correction method of a modification of the embodiment will be described. Fig. 15 shows that when the incident light of the incident light amount L1 is incident on the second light detecting circuit LSI, the dimming incident light of the incident light amount L1/n is incident on the photodetecting circuit LS2, and is charged to the capacitors 11A, 21A. A pattern of the time variation of the potential. In Fig. 15, the vertical axis represents the potential of the capacitor, and the horizontal drawing represents the elapsed time from the start of the measurement. In the i-th towel, the function curve W is a time change of the potential of the electrode 111 of the capacitor ιι 表示 of the i-th photodetecting circuit (3) in the initial state, and the capacitor of the second photodetecting circuit LS2 of the function curve V-system The electrode 211 = two time changes, the function curve Vaa (1) is expressed as the time change of the potential of the electrode ln after the deterioration:: = = inferior, the electrode of the capacitor 210 measured later... electricity: 2 k some curves indicate The situation of the potential over time is because if f is reduced by 101 盥, the source part of the TFT1 感 of the first sensor is two: the 'potential difference' between the two and the second pre-sensor TFT 200 The electricity between the source and the bungee is distributed to the TFT100, and the difference between the two is small. It takes a lot of time. First electric... small, so that the potential is lowered to detect Ϊ:: Γ 电: 容容二:: 1 indicates _ state of the first light - τ tbl is not the initial state of the 320535 38 200919400 2 light talent The time required for the electric circuit of the measuring circuit LS 2 to be cried 9 1 n aa % is reduced to between the predetermined broadcasting path and the % of t, and the potential lowering time taal is expressed by the potential Vaa of the deterioration stop 110 being lowered. To the predetermined potential vc, the capacitor is crying, and the lowering time is 1 bb 1 is a light quantity of the light emitted by the light detecting circuit LS1 required for the potential ^ 210 of the time period after the deterioration is lowered to the predetermined potential Vc. The amount of light of the dimming incident light of the second photodetecting circuit LS2 having the dimming hand is larger, and therefore the leakage current of Tm 00 is larger than the leakage current of the TFT. In addition, the sensitivity under the 'monthly first' is higher than the leakage current in the initial state due to exposure to light. Therefore, the initial state: the potential reduction time of the x-ray measuring circuit LS1 is the shortest. In addition, the accumulated light amount of the TFT 100 is more than the cumulative light amount of the TFT 2 ’, so the deterioration speed is relatively high. Therefore, the f 1 photodetecting circuit (3) is large with respect to the magnitude of change in the potential lowering time with respect to the initial state after the deterioration. Since the relationship between the potential of the long capacitor and the potential lowering time is the same as the relationship between the photocurrent and the incident light amount, the potential lowering time ta 〇, tb 对 of the initial state of the predetermined incident light amount L0 can be measured in advance, and Find the initial ratio taO/tbO. Then, the measured ratio (Ual/tbbl) is calculated by calculation from the measured potential decrease time taal and the potential decrease time tbbl '. Then, as a ratio of the ratio between the measured ratio (taal/tbbl) and the initial ratio (ta0/tb〇), the light deterioration correction coefficient of the modified example of the present embodiment is 320535 39 200919400

Kt' is expressed as Kt = (taal / tbbl) / (taO / tbO). Next, the photo-degradation rate Dt of the modification of this embodiment will be described. The light + rate Dt is defined by the ratio between the potential t1 between the potential of the second photodetecting circuit LS2 in the initial state and the potential of the second photodetecting circuit (10) after degradation, and is expressed as D(four)bl. /tbl. In the present embodiment, the photo-degradation correction coefficient can be made to correspond to the photo-definition in such a manner that the photo-degradation correction coefficient K corresponds to the degradation rate D. It is only necessary to change the lookup table to a lookup table that corresponds the photo-degradation correction coefficient Kt to the photo-degradation rate Dt. Then, when the photo-deterioration rate is obtained from the photo-degradation correction wire Kt, the potential of the capacitor 21A in the initial state of the dislocation is lowered, and the potential is lowered as a light-quantity detecting device according to a modification of the present embodiment. first. The flow chart of the action of the modified example of the present embodiment is

As in Vs, in the case of S1, the capacitors 110 and 210 are charged to the potential of . The incident light of the incident light amount L1 is irradiated to the light-reducing person of the Tm light-emitting device (10), and the potential of the electrode ιη of the second r is taken as the first round-in = 匕 SA SA2 1 1 _ W 2 loses S b, and reads the running signal of her heart output Λ唬Sb potential signal, H transfer material money charm Ve so low f such 'can be obtained after deterioration of the first light detection circuit LS1 The potential decrease time taal of 320535 40 200919400 and the potential decrease time tbbl of the second photodetection circuit LS2 are calculated from these potential decrease times (taal/tbbl). Further, the potential lowering time tbbl of the second photodetecting circuit LS2 after the deterioration is output to the optical signal output unit 24. Then, in step S2, the initial ratio (ta〇/tb〇) is taken from the memory circuit 2 to the <the coefficient calculation unit 21, and the photo-degradation correction coefficient KK=_/tbbl)/(10)/tb0) is calculated. . This light deterioration correction coefficient is then output to the optical signal output portion 24. This initial ratio is in the initial state, and is the incident light when the incident light amount l〇 is incident on the i-th photodetecting circuit LS1, and the incident light amount L〇/n is incident on the second light detecting circuit LS2. Time, first! The potential reduction time of the optical detection circuit LSI is 电位, and the potential reduction time is _. The second test circuit LS2 22. In the step S3, the photo-degradation rate calculation unit and the body-lighting unit 23 perform the photo-degradation correction system (4), and the calculation unit 21 obtains the money, and obtains the light degradation corresponding to the output from the deterioration coefficient 21, and then The photodegradation rate of the photodegradation Kt obtained is determined. However, the rate is output to the optical signal output unit 24. The transmission rate calculation unit 22 transmits a ===zhong' based on the potential deviated from the potential of the optical inferior calculation unit u, and decreases the time tbl from the deterioration coefficient (tbbl/D, In the initial state, _ is corrected. Then, in step e, the potential after the degradation is decreased, and the potential of the initial state of the output is 320535 41 200919400, and the time tb 1 is decreased as the amount of light of the incident light. In addition, the output signals Sa and Sb from the goods 1 and 2nd light detecting units 10a and 10b can be read and the potentials of the capacitors 11A and 21〇 can be reduced, thereby performing the photodegradation. _正正 [Second embodiment] & X ° Next, the second embodiment will be described. The second caution mode is output from the bth second light detecting unit H)a to the light sensation. The potential signal 'read and convert to photocurrent' of the detector reading unit 2 () is subjected to logarithmic conversion of the photocurrent and then calculated. First, the calculation method based on logarithmic conversion will be described. If logarithmic conversion is performed on the photo-degradation correction coefficient K of the i-th embodiment, it becomes Log2K=

Log2{(Iaa(Ll)/Ibb(Ll/n))/(Ia(L0)/Ib(L0/n))}=(Log2(Iaa(Ll))-Log2(Ibb(Ll/n))HLog2 (Ia(L0))-Log2(Ib(L0/n))). When logarithmic conversion is performed on the photo-degradation rate D, Log2D=Log2 (Ibb(Ll/n)/Ib(Ll/n))=Log2(Ibb(Ll/n))-Log2(Ib(Ll/n)) . Therefore, by logarithmic conversion, multiplication and division can be replaced by addition and b· /ξίΐ reduction. Thereby, the logarithmically converted photodegradation correction coefficient Log2K and the logarithmically converted photodegradation rate Log2D can be obtained by Log2(Ib(Ll/n))=Log2(Ibb(Ll/n))-Log2D, The logarithmicly converted photocurrent Log2 (Ib(Ll/r〇) is calculated in the initial state. Then, the logarithmically converted photocurrent Log2(Ib) is converted into a real number, and the second light in the initial state is calculated. Current Ib(Ll/n) (= Ibb(Ll/n)/D). The second photocurrent lb in the initial state thus obtained is 42 320535 200919400 as the light quantity signal s of the incident light and is output. Light quantity detection of the display device of the second embodiment_::: Flow of correction of the photocurrent of the second embodiment

(10) The ^^ has the first output signal Sa and the second output signal from the second optical detecting unit, the café, and the second output signal are converted into the first #雷, ώ故, "R for the cow Come! , t(10) photocurrent Ibb, and logarithmically rotated r ', the logarithmically converted measurement ratio is performed in the memory circuit 23, and the initial ratio after the logarithmic transformation is read. The photo-degradation correction coefficient is one step of the 'Wei Yi body circuit 23, and the photo-degradation correction coefficient obtained by the operation is obtained. The step S14 after the logarithmic conversion of the second doubled rate Log2D is obtained from the memory circuit magic: the logarithmically converted photo-degradation rate LGg2D, and the logarithmically converted photocurrent L0g2(Ib) is calculated as (4) S15; The logarithmically converted photocurrent (L〇g2(Ib) is converted into a real number (4) (4): and the second photocurrent ib after the real number conversion is used as the light amount signal s and is outputted. Step 2: In the second implementation In the memory circuit 23 of the type, the logarithmically converted initial ratio LOg2(Ia(L0))_L〇g2(Ib(L0/n)) is memorized, and the logarithmically converted photo-degradation correction coefficient is stored. L 〇 2 2 及 及 及 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 2 The round-out signal and the second output signal Sb obtain the i-th 320535 43 200919400 photocurrent Iaa (L1) and the second photo-current Ibb (Ll/n) after the deterioration of the incident light amount L1, for these ith photoelectric k Iaa (Ll) and brother 2 photocurrent ibb (Ll / n) logarithmically converted to calculate Log2 (Iaa (Ll)) and Log2 (Ibb (Ll / n)). The current through the second optical Log2〇 log-transformed [bb (u / n)) to the output optical signal output section 24. Next, in step S12, the deterioration coefficient calculation unit 21 calculates the logarithmically converted measurement ratio L〇g2 (Iaa(L1))-L〇g2(Ibb(Ll/n)). Thereafter, in step S13, the deterioration coefficient calculation unit 21 reads the logarithmically converted initial ratio L〇g2 (Ia(L〇)) from the memory circuit 23.

Log2(Ib(L0/n)), and calculate the logarithmic converted photo-degradation correction coefficient

Log2K=(Log2(Iaa(Ll))-Log2(Ibb(Ll/n))HL〇g2(Ia(L0))-Lo g2(Ib(L0/n))). Then, in step S14, the logarithmically converted photo-degradation correction coefficient L〇g2K calculated in step S13 is output from the deterioration coefficient calculation unit 21 to the photo-degradation rate calculation unit 22. In the photo-degradation rate calculation unit, the logarithmically converted photo-degradation correction coefficient Log2K' output from the deterioration coefficient calculation unit 21 is output to the memory circuit 23. In the memory circuit B, 'the logarithmically converted photo-degradation rate Log2D corresponding to the log-transformed photo-degradation correction coefficient LGg2K output from the photo-degradation rate calculation unit 22 is outputted from the look-up table B, and output to the light. Deterioration rate calculation unit 22. Thereafter, the photo-degradation rate calculation unit 22 outputs the logarithmically converted photo-degradation rate Log2D output from the memory circuit 23 to the optical signal output unit Μ. Then, in step S15, in the optical signal wheeling portion 24, the logarithm of the logarithmically converted light degradation rate (10) and the 320535 44 200919400 output from the deterioration coefficient calculation unit 21 is outputted from the memory 23 circuit. The second photocurrent Log2(Ibb(Ll/n))' is the logarithmic photocurrent of the initial state

Log2(Ib(Ll/n))(= Log2(Ibb(Ll/n))-L〇g2D). After μ, step (4) 6 is performed on the optical signal output unit 24, and the photoelectrically converted & L〇g2Ib after the initial logarithm conversion is converted into a real number, and the second photocurrent Ib (L1/n) in the initial state is transmitted ( = Ibb(u/n)/D). # The first step U in the initial state calculated in the step S16 is U as the light amount signal s of the human light amount L and is output. According to the second embodiment, the following effects can be obtained. By performing the logarithmic conversion calculation, the multiplication and division can be replaced by addition and subtraction, so that the circuit configuration can be reduced. Thereby, the circuit area can be reduced and the manufacturing cost can be reduced. In addition, power consumption can be suppressed. According to the material, the MU mode indicates that the first round of the input to the photosensor is 0. The 5 Sa and the second output signal Sb are read and converted into the capacitors m and 21, and the potential is lowered from Vs to % is required = time, and is converted by logarithmic conversion, whereby the light amount signal s can be calculated and rotated. In addition, in the present embodiment, the amount of incident light amount of the light amount detecting device is continuously measured. At the next measurement, by applying the potential Vg to the idle terminal 19, τρτι〇〇 and (9) can be turned on and the potentials of the capacitors 11G and 21G can be discharged. Thereafter, the potential Vs is charged to the electric valleys s 11G and 21G and measured. In the arrangement of the first light detecting unit and the second light detecting unit, the arrangement of the light detecting unit will be described below using the drawings from Fig. 19 to Fig. 19 to 3205.1 45 200919400 to the photodetecting material. The same components as those described in the embodiment and the like are denoted by the same reference numerals, and the description is omitted. (Arrangement Example 1 of Light Detection Unit) Hereinafter, the description will be made based on the η diagram! The arrangement example 1Q of the light detecting unit and the second light detecting unit is a schematic plan view showing the arrangement example 1 of the first light detecting unit and the second light detecting unit. As shown in Fig. 17, the array substrate AR has outer peripheral edges DA (4), DA (b), DA (c), and da (4), and is provided with a display area DA in which a plurality of pixels 400 are disposed. The outer peripheral edges DA(4), DA(b), and DA(4) of the display region d°a are disposed with the second photodetecting portions 1〇b along the outer peripheral edges da(4), DA(b), and DA(c), respectively. On the outer side of the second light detecting unit 10b (opposite to the display area DA), the jth light detecting unit 1〇& is disposed along the second light detecting unit 10b and substantially juxtaposed. The first light detecting unit 10a and the second light detecting unit 10b are not limited to the above arrangement along the outer circumference = DA (4), DA (b), and DA (C), and may be along the outer circumference DA (a). At least one outer circumference of DA(b) and DA(c) is provided. According to the configuration of the first configuration example, the light detection can be performed at a position close to the display area DA, so that the detection accuracy can be improved. Further, by arranging the first light detecting unit 10a and the second light detecting unit 10b in parallel, it is possible to suppress the first photo sensor (not shown) and the second photo sensor (not shown). The characteristic fluctuations' can improve the detection accuracy. Regarding the first light detecting unit 10a and the second light detecting unit 1b, the first light detecting unit 1a may be disposed on the outer peripheral edges DA(a), DA(b), and DA(c). The second photodetecting unit 10b is disposed along the outer side of the first photodetecting unit 1A, and the same effect is obtained. 320535 46 200919400 (Arrangement Example 2 of Light Detection Unit) Hereinafter, an arrangement example 2 of the first light detection unit and the second light detection unit will be described based on Fig. 18 . Fig. 18 is a schematic plan view showing an arrangement example 2 of the first light detecting unit and the second light detecting unit. As shown in Fig. 8, in the array substrate AR, there are outer peripheral edges DA(4), DA(b), DA(4), and DA(d).

A display area DA having a plurality of pixels 4 is disposed. The outer peripheral edges DA(a), DA(b), and DA(c) of the display area DA are alternately disposed with the first light along the outer peripheral edges DA(a), DA(b), and DA(c)', respectively. The detecting unit 1 〇a and the second light detecting unit 1 Ob. The number of the first light detecting unit 〇a and the second light detecting unit 10b shown in Fig. 18 is only an example, and the number of each is not limited. According to the configuration of the second configuration example, the light detection can be performed at a position close to the display area da, so that the detection accuracy can be improved. Further, by arranging the first light detecting unit 10a and the second light detecting unit 1b alternately, it is possible to suppress the irradiation of the first photo sensor (not shown) and the second photo sensor (not shown) Show) the fluctuation of the amount of light, and lower the number! The deterioration of the photo sensor and the second photo sensor is fluctuating. (Arrangement Example 3 of Light Detection Unit) Hereinafter, an arrangement example 3 of the second light detection unit and the second light detection unit will be described based on Fig. 19 . Figure 19 shows the first! A schematic plan view of the arrangement example 3 of the light detecting unit and the second light detecting unit. As shown in Fig. 19, in the array substrate AR, a display area da provided with a plurality of pixels 4 is provided. The first photodetecting portion H)a or the second photodetecting portion 1b is disposed in a portion (in the present embodiment, a central end portion) of each pixel 400. Preferably, the i-th photodetection 320535 47 200919400 detecting unit 10a and the second photo detecting unit i〇b are alternately arranged in each of the pixels 4〇〇 on the row or column of the pixel 4〇〇. This u ^ ί ^ ^ 'β\ λ Budi 1 light detecting unit l〇a and brother 2 first detecting 101) may also be configured for each pixel according to the configuration example 3, since each of the first . The first light detecting unit 10a and the second detecting unit are disposed in the pixels 400 ό and 2 (not shown) and 苐 2 = amount. Therefore, in addition to the effects of the foregoing configuration examples, 2, the detection accuracy can be improved. [Simple description of the figure] ^ The first picture shows the top view of the display device 1〇00. The figure shows a top view of one pixel of the array substrate. The j 3 diagram shows the m_m and line profiles in Fig. 2. The f 4 diagram shows a block diagram of the configuration of the light amount detecting device 1. The brother 5 shows the circuit configuration of the first light detection circuit (3) 'LS2. Fig. 6 shows the first and second mines 1^1 first private measurement unit, and (4) the first light detection () is a schematic diagram of the second light detection circuit [Μ. formula. The graph shows a plot of photocurrent 1 as a function of incident light amount L. Fig. 8 is a graph showing the relationship between the photocurrent 1 and the incident light amount L. Fig. 9 is a flow chart showing the correction of the photocurrent.

The light deterioration rate D Fig. 10 shows a pattern of measurement data regarding the light deterioration correction coefficient K. Fig. 11 is a circuit diagram showing a configuration example of the dimming means. 320535 48 200919400 Fig. 12 is a graph showing the measurement ratio between the output signal of the 帛1 and the output signal of the 帛2. Fig. 13 is a circuit diagram showing a configuration example 2 of the dimming means. Fig. 14 is a circuit diagram showing a configuration example 3 of the dimming means. Fig. 15 is a diagram showing the temporal change of the potential of the capacitor. Figure 16 is a flow chart showing the correction of photocurrent. Fig. 17 is a schematic plan view showing an arrangement example 1 of the first light detecting unit and the second light detecting unit. Fig. 18 is a schematic plan view showing an arrangement example 2 of the second light detecting unit and the second light detecting unit. Fig. 19 is a schematic plan view showing an arrangement example 3 of the second light detecting unit and the second light detecting unit. [Description of main component symbols] 1 Light amount detecting device 10a First light detecting unit 10b Second light detecting unit 20 Photo sensor reading unit 21 Deterioration coefficient calculating unit 22 Light degradation rate calculating unit 23 Memory circuit 24 Optical tiger output Portion 30 Potential Control Circuit 50 External Control Circuit 72, 1018 Gate Insulation Film 100 Thin Film Transistor (TFT) 102 Dipole Portion 103, 123, 203, 2.23 Gate Portion 110, 210 Capacitor 111, 212 Electrode '120 > 220 Switching element 124, 204' 224, 1019 semiconductor layer 125, 660, 760 black matrix 320535 49 200919400 130 power terminal 140 '240 output terminal 173, 174, 175, 273, 274, 275 conductive film 190 gate _ terminal 191 汲 extreme Sub-200 thin film transistor (TFT) 201 source portion 250, 530, 550, 730, 750, CF color filter 400 pixel 670 ^ 770 opening portion 1000 liquid crystal display device 1002 ' '1010 transparent substrate 1002A protruding portion 1002a, 1002b Short side 1002c, 1002d long side 1014 liquid crystal 1016 auxiliary capacitor line 1017 auxiliary capacitor electrode 1020 protective insulating film 1021 interlayer film 1022 reflection portion 1023 Penetration 1024 Reflector 1025 Contact hole 1026 Pixel electrode 1027 Color filter layer '1028 Top coat D Light degradation rate DA Display area Dr Driver GW Gate line Ia(L), Iaa(L), Ib(L ·), Ibb(L) Photocurrent K Light deterioration correction coefficient L Incident light amount L1 to L4 Pull out the wiring LSI First light detecting circuit LS2 Second light detecting circuit S Light amount signal Sa First output signal 50 320535 200919400 Source line

• Sb 2nd output signal SW T1 to T4 terminal 51 320535

Claims (1)

200919400 •10, the scope of application for patents: 1 · A display device, which has a display device corresponding to each pixel and having a switch 兀:: display area, which is characterized by: The detection device includes: a second photodetecting unit including a second photosensor, and a second light detecting unit including a second photosensor; and a domain=taking unit' a light detecting unit: detecting: the detected amount of light as a light amount signal; and first f′ viewing the Japanese temple in a plan view, and forming the first light sense or the second light salted spear, which is incident on the first i Light salt ^ at least one overlapping area and become different; first sensor or the aforementioned second light sensor light quantity light sensor: In = Yes: will be based on the first sensing. Output to the above-described light-light sensing == = According to the second light-detecting electric light incident on the second sensor reading portion, the light is outputted to the light, the light sensor reading unit, and the deterioration coefficient calculating unit , Department. The experience between the two, and the second round of the signal: Example: =1 output signal Φ The ratio of τ ^ Uil 少 is less, and the U is first calculated by the wire, and the light m is used as the ratio between the ratio of the pre-measurement and the #u coefficient to the ratio of the measured period. The ratio of the first photo-degradation rate calculation unit is based on the first deterioration correction coefficient, and the photo-degradation rate of the first or second output signal is obtained by the LED535535 52 200919400; and the optical signal output unit is based on the photo-degradation rate. In the form of an initial (four) light quantity signal, the foregoing second or second output signal is corrected and outputted. 2. The display device of the invention of claim 2, wherein: the first light reduction means of the first is to reduce incidence The amount of light in the detector; and %A "the light reduction means of the detector reduces the rate of decrease in the incidence of the person caused by the second light perception and the tenth to the second light reduction means. The reduction rate of the human light caused by the dimming method is also large. The display device of the second item, wherein the first subtraction is 4. The relative spectroscopic transmittance of the two spectroscopic means is equal. Incident on the aforementioned, Spreading:: Part of the light of the hand is shaded::; or "2nd light sensing 5. As shown in paragraph 4 of the scope of the patent application, there is a display segment that will be incident on the aforementioned The dimming hand "application patent range m and:: first member. In the above, the photo-deterioration rate calculation material I of the display device, which corresponds to the aforementioned photo-degradation rate:: query, the photo-degradation correction coefficient 7.= The photo-deterioration rate described in item 6 of the scope of application for patents is on the lower and lower garments of Qiu Liyi, and the order is repeated. The first deterioration correction coefficient is not included in the previous 320535 53 200919400 lookup table. Using the interpolation calculation of the inferior coefficient of the above-mentioned lookup table, the above-described photo-deterioration rate is derived, and the first photosensor and the aforementioned display device are as described in the first to seventh claims. The second sensing sensor is a thin film lightning body and has a capacitor for applying a material (four) film and U charging. "The voltage at both ends of the body is carried out. 9. For the display device of the δth item of the patent application, the second output signal is caused by the charge and discharge of the capacitor by means of photoelectricity; , ^ ^ ^ 4 10. The voltage drop time is obtained. 10. In the case of the display device of the "Patent No." to the Hall + &, and the item, the deterioration coefficient calculation unit performs logarithmic conversion on the above-mentioned eight) to calculate the foregoing. The photo-degradation correction signal correction=== refers to the photo-deterioration rate of the logarithm of the photo-degraded U-number. The table is a round-off of the deterioration coefficient calculation unit. Deriving the logarithmic photo-deterioration coefficient to obtain the photo-deterioration rate of the logarithm; and the photo-signal output unit corrects the first or the second of the logarithm of the logarithm The first or second round of the logarithm of the corrected logarithm is output. The output of the second output is converted back to the real number and applied: the display device of any of the patent items 1 to 1 , i ' A photo-electric material layer is provided in the display region. The display device according to any one of the items 1 to 5, wherein the first light detecting unit and the second light detecting unit are juxtaposed along the outer periphery of the display area of 320535 54 200919400, respectively. The display device of any one of the first to fifth aspects of the invention, wherein the first light is detected, and the light detecting portion is respectively along the display area. The display device according to any one of the above-mentioned items, wherein the first light detecting unit and the second light detecting unit are disposed in the foregoing A display device according to any one of claims 12 to 14, wherein the sum of the sizes of the first photosensors and the sum of the sizes of the second photosensors are equal. The display device according to any one of claims 1 to 15, wherein the dimming means is a color filter or a polarizing plate or a phase difference plate. 7· A display device, wherein 'the aforementioned light blocking member is a black matrix. 320535 55