200917357 —vww vw .-· --«JItwf.cioc/n. 九、發明說明： 【發明所屬之技術領域】 種麵刻製程的方法，且特別是有關 本發明是有關於一 於一種乾式钱刻製程。 【先前技術】 ，，電路領域的快速發展，高效能、高積集度、200917357—vww vw .-· --«JItwf.cioc/n. Nine, invention description: [Technical field of invention] The method of engraving process, and especially related to the invention is related to a dry money engraving Process. [Prior Art], the rapid development of the circuit field, high performance, high integration,
=、輕薄短小已成為電子產品設計製造上所追尋之目 =對目前的半導體產業而言，為了符合上述目標，往往 同-晶片上’製造出多種功能的元件。換言之，在 =曰曰^上’同-層膜層之不同區塊上，所形成的圖案密 度會有南低不同的情形。 然而，以_作為圖案化的方法時，往往會因為圖案 密度的差異而導致_速率的不平均。在随密度大（即 小尺寸圖案）的區域，蝕刻速率會比較慢，在圖案密度小 (即大寸圖案）的區域’㈣速率則會比較快，而產生微 負載效應(micro-loading effect)，導致膜層蝕刻的深度不―。 請參照圖1’圖1是習知乾式蝕刻製程的刮面示意圖。 膜層100包括圖案密集區100a與圖案疏散區100b，膜層 1〇〇上方為罩幕層110。罩幕層110在圖案密集區1〇〇a的 圖案密度大於罩幕層11〇位在圖案疏散區1〇〇b的圖案密 度。蝕刻的過程中，由於圖案疏散區1〇〇b裸露出的膜層 1〇〇範圍較大，上方累積的反應氣體也比較多，使得此區 域的蝕刻速率較快，微負載效應的結果導致膜層蝕刻的深 200917357 -3ltwf.doc/n 度不平均’圖案疏散區l〇0b的膜層1〇〇表面低於圖案密集 區l〇〇a的膜層1〇〇許多。這樣的結果不但會影響元件整體 =均也會增加後~製程（如沈積或微影、平坦 1娜度。尤其當小尺寸圖㈣線寬縮小或是高寬 比增加蚪，微負載效應的影響會更加嚴重。 【發明内容】 f 對膜=崎程，在侧進行之前，先 仃迢充电步驟，以降低微負载效應。 主電魏絲難程，錢Μ麵前，利用 微啟’於膜層表面附著帶正電的離子，可以降低 本發明提出一種乾式蝕刻製 使膜層於餘刻後適一膜層， 曰上⑽成有-層圖案化的罩幕 联 對此膜層進⑽辭驟之前，先進行充程包括在 之多個離子附著於裸露出之膜層上。”…使帶正電 在本發明之—實施例中， 充電步驟包括1 製程，其中 著於裸露出之膜層表面。入 ％水中帶正電之離子附 膜層實施例中’上述之乾式钱刻製程’並中 區之圖宰區與_疏散區，且罩幕層於圖宰密隼 疏散區之圖案Ξί集 “射，上述之乾式餘刻製程，其中 200917357 ^«Jltwf.doc/n 在膜層表面’附著於圖案疏散區中這些離 一 著於圖案密集區中這些離子的密度。 的後、度大於附 在本發明之一實施例中，上述之乾式 電漿產生步驟與蝕刻步驟是使用相同的反應書衣？ /、τ 在本發明之-實施例中，上述之乾式飾=程， 電漿產生步驟與餘刻步驟是使用不同的反應气- 八 f 在本發明之-實施例中，上述之乾式程， 電漿產生步驟使用的反應氣體不含鹵素。 八 在本發明之-實施例中，上述之乾式餘 二姓刻步驟她，充電步财崎於膜層表 離 向下蝕刻之程度可以忽略不計。 二離子 本發明提出-種乾式敍刻製程，適用於 使膜層練刻後在不同的區域形成不 ^ 層:r的罩幕層。此乾式-以^=, light and short has become the pursuit of electronic product design and manufacturing = For the current semiconductor industry, in order to meet the above objectives, often on the same - on the wafer to create a variety of functional components. In other words, on the different blocks of the same layer of the layer, the pattern density formed may have a different south. However, when _ is used as a patterning method, the _ rate unevenness tends to be caused by the difference in pattern density. In areas with large density (ie, small size patterns), the etch rate will be slower, and in the area where the pattern density is small (ie, the large pattern), the rate will be faster, resulting in a micro-loading effect. The depth of etching of the film is not--. Please refer to FIG. 1'. FIG. 1 is a schematic view of a scraping surface of a conventional dry etching process. The film layer 100 includes a pattern dense region 100a and a pattern evacuation region 100b, and a mask layer 110 is above the film layer 1 . The pattern density of the mask layer 110 in the pattern dense area 1a is larger than the pattern density of the mask layer 11 in the pattern evacuation area 1〇〇b. During the etching process, since the film layer 1裸 exposed in the pattern evacuation zone 1 〇〇b has a large range, the accumulated reaction gas is also relatively large, so that the etching rate in this region is faster, and the result of the micro-loading effect leads to the film. Layer etching depth 200917357 -3ltwf.doc/n degree unevenness 'pattern evacuation zone l〇0b film layer 1〇〇 surface is much lower than the film layer 1〇〇a of the pattern dense area l〇〇a. Such a result will not only affect the overall component = will also increase the post-process (such as deposition or lithography, flat 1 degree. Especially when the small size map (4) line width reduction or aspect ratio increase 蚪, the effect of micro-load effect [Inventive content] f For film = Saki, before the side, first charge the charging step to reduce the micro-load effect. Main electric Weisi difficult, Qian Qian, use micro-initial The surface is attached with positively charged ions, which can reduce the dry etching process of the present invention, so that the film layer is suitable for the film layer after the film is removed, and the film is layered with a layered pattern (10). Previously, the charging process involves attaching a plurality of ions to the exposed film layer. "...Making the band positively in the present invention - the charging step includes a process in which the exposed film layer is exposed Surface. In the example of the positively charged ion engraving process in the positively charged ion film layer of the % water, and the patterning zone and the _ evacuation zone in the middle zone, and the pattern of the mask layer in the evacuation zone of the 宰 隼 隼 Ξ Ξ Ξ Set "shooting, the above dry remnant process, its 200917357 ^«Jltwf.doc/n is attached to the pattern evacuation zone in the pattern evacuation zone. The degree of density of these ions in the dense region of the pattern is greater than that attached to an embodiment of the invention, The dry plasma generation step and the etching step use the same reaction book. /, τ In the embodiment of the present invention, the above-mentioned dry decoration = process, the plasma generation step and the remaining step use different reaction gases -八f In the embodiment of the present invention, the above-mentioned dry process, the reaction gas used in the plasma generating step does not contain halogen. In the embodiment of the present invention, the above-mentioned dry type of surname is engraved by her step, charging step The extent of the etch-off of the film on the surface of the film is negligible. Diion The present invention proposes a dry-type etch process, which is suitable for forming a mask layer in different regions after the film is etched. This dry type - to ^
O 離子’且這些離子附著於裸露出 二’、、'、後持績開啟主電源’並開啟—偏壓電源，以 進仃一蝕刻步驟，移除部分膜層。 ’、 膜屬之—實施例中’上述之乾式餘刻製程，並中 區案饮集區與圖案疏散區，罩幕層於該圖案密集 ^检度大於該罩幕層於該圖案疏散區穷了 之膜’上述之乾式中 著於^ ”隹=於圖案疏散區中這些離子的密度大於附 、圖案始木區中這些離子的密度。 200917357 iltwf.doc/n 在本發明之一實施例中’上述之乾式蝕刻擊 i 充電步驟與蝕刻步驟是使用相同的反應氣體。、 ^ τ 在本發明之-實施例中，上述之乾式餘刻 充電步驟與蝕刻步驟是使用不同的反應氣體。 ^ τ 在本發明之-實施例中，上述之乾式餘刻 充電步驟使用的反應氣體不含鹵素。 又 〃τThe O ions 'and these ions are attached to the exposed two ', ', and then the main power supply is turned on and the bias power is turned on to remove an additional etching step to remove a portion of the film. ', the film belongs to the - in the embodiment of the above-mentioned dry remnant process, and the middle area of the drinking area and the pattern evacuation area, the mask layer in the pattern dense ^ detection greater than the mask layer in the pattern evacuation area poor The film 'the above dry type is in the middle ^ 隹 隹 = the density of these ions in the pattern evacuation zone is greater than the density of these ions in the attached, patterned wood zone. 200917357 iltwf.doc / n In an embodiment of the invention 'The dry etching step and the etching step described above use the same reaction gas. ^ τ In the embodiment of the invention, the above-described dry residual charging step and etching step use different reaction gases. ^ τ In the embodiment of the invention, the reactive gas used in the dry recharge step described above does not contain halogen.
C 在本發明之一實施例中，上述之乾式蝕刻制 主電源提供能量於反應室中形成電漿。 衣壬，、中’ 在本發明之一實施例中，上述之乾式蝕刻製 偏壓電源提供能量於反應室中吸引離子蟲 ^芏，、中， 層。 料鱗，移除部分膜 在本發明之-實施例中，上述之乾柄 充電步驟與該餘刻步驟中所開啟之該主雷 王’、中’ 同。 冤源功率可以是相 在本發明之-實關巾，上述之乾仏 於充電步驟中，主電源最好是介於5⑽〜如⑼ "中， 以縮短離子化所需的時間。 瓦特之間， 在本發明之-實施例中，上述之乾式餘 於充電步驟中，開起偏壓電源，且偏壓電源小=王其中， 在本發明之-實施例中，上述之乾式餘瓦特。 膜層包括矽基底。 j衣&，其中 在本發明之-實施例中，上述之乾式 充電步驟所使用之反應氣體包括Ar、He、^ I秩’其中， HBr、Cl2、CF4、SF6 或 NF3 至少其中之—2 玫2、CH4、 200917357 一〜doc/π 在本發明之一實施例中， ―驟所使用之反應氣體包二之二=程’#中’ NF3至少其中之一。 2 U4、sf6或 先進之乾式綱製程，於似彳步_始之前， 先^丁充$步驟’使膜層表_著了帶正電的離子 2案ΐ散區_層裸露出的表面範圍較大，會有較多的離 續的崎驟中’可以減輕圖案疏散區 effect) 連率，進而緩和微負載效應(micr〇_I〇ading 為讓本發明之上述特徵和優點能更明顯易懂，下 舉較佳實_，並配合所關式，作詳細說明如下。· 【實施方式】 制圖2 A至一圖2 C是緣示本發明一實施例之一種乾式钱刻 ‘程的剖面示意圖。圖3是緣示本發明—實施例之一種乾 式餘刻反應室。 清參照® 2A與圖3，此種乾式钱刻製程，適用於_ 膜層200，使膜層200於餘刻之後，會在不同區域形成具 有不同圖案密度的圖案。在一實施例中，膜層2〇〇例如是 ，有圖案密集區200a與圖案疏散區2〇〇b。膜層2〇〇例如 疋位於晶圓310上，與晶圓310 —同放置於反應室300之 中。膜層200可以是矽基底、介電層，或者是導體層，如 即將形成内連線之導體層。膜層2〇〇的形成方法會依照膜 層的材質不同而更改，可以是化學氣相沈積法或是物理氣 200917357 - —-31twf.doc/n 相沈積法。 膜層200上已形成有一層罩幕層21〇 ,罩幕層21〇於 圖案密集區200a之圖案密度大於罩幕層21〇於圖案疏散區 2001^之圖案密度。罩幕層210的材質例如是氮化矽、碳化 矽、氮碳化矽、氮氧化矽之類的介電材料，其形成方法可 以疋化學氣相沈積法。當然，配合下方膜層2〇〇的材質， 罩幕層210也可以是多晶矽或其他材料。罩幕層21〇材質 可以依如、下方膜層200材質的不同而定，選擇與膜層2〇〇 具有不同蝕刻選擇比的材質即可。 “接著，请參照圖2B以及圖3，進行充電步驟，使帶正 電之多個離子附著於裸露出之膜層2〇〇表面。此充電步驟 例如是在反應室300中產生電漿，並使電漿之中帶正電的 離子附著於膜層200表面。由於膜層200上方之罩幕層21〇 的圖案密度不-，在圖絲倾2QGa的膜層，，圖曰案密 度較大，裸露出的膜層200範圍較小，因此，位於此區二 ，層200表面的離子比較少。而在圖案疏散區2〇〇b之膜層 ~ 〇上罩幕層210的分佈較稀疏，相對地，裸露出的膜 層200面積較大，多數的離子便聚集於此區之膜層2⑻表 =。換言之，圖案疏散區2〇〇b的膜層2〇〇由於裸露的表面 粍圍大，表面附著的離子數量與密度也多於圖荦宓隹 2〇〇a膜層200。 、山木啦 恭請參照圖3，在一實施例中，反應室300例如是一種 ^漿反應室，> 高密度電漿反應室，反應室300例如是遠 接有主電源325與偏壓電源335。其中，主電源奶例如 200917357 31twf.doc/n 是提，能量而於反應室中產生電漿，而偏星電源奶 則可疋提絲量喊電漿巾之離子進⑽子縣與_。 上述充電步侧如是藉㈣啟主魏奶，秘反應獅 中產生電漿，使錢之巾帶正電的離子畴於膜層勘表 二電步驟中’主電源325的功率例如是控制在介於 500〜〇瓦特之間，使用500瓦特以上的功率是 ^充電步驟所需要的時間，而㈣錄地產生離子，並使 ==層細裸露的表面。至於偏壓電 以 疋關閉或者是開啟，若開啟了偏壓電源335 制偏壓電源335的功率、於sn 3 H 疋控 奶，以避免離子向下^於5G瓦特或疋關閉偏壓電源 +驟2C，於充電步驟之後’接著進行蝕刻 ^由於上述充電步驟，使膜層2⑻表面附著了帶正雷 的離子’因此，在離子轟擊進行_的時候 Ο 膜層表面的離子會阻擔了部分向下轟擊的料，^ 祕^速率侧是在騎之贿疏舰細& = /刀’由於許多離子分佈於表面，因此這 1 刻速率會下降，而減輕了微負載效應⑽^ad eff^的影響。如此—來，圖案疏散區島之膜層200與§ 名集區2GGa之膜層酬後的聽落錢能夠縮 與偏壓電源、335以進^是開啟反應室3〇0的主電源325 於反應室中產生^订^步驟。主電源325的開啟持續 %水’偏壓電源335則提供離子能量， 200917357 51twf.doc/n 擊膜層200裸露出來的表面。其中，主電源ns的功率例 如是介於100〜3000瓦特’依照所蝕刻的臈層2〇〇之材質、 預定的蝕刻速率，以及所選用的蝕刻氣體而定。 在充電步驟與钕刻步驟中，反應室中會充入反應 氣體，在主電源325施加的電壓，將原本中性的氣體分子 激發或解離而形成電漿。在充電步驟中’ 函素的反應氣體如Ar、He、h2、〇2、N2或CH4，也可以 使用含有鹵素的氣體如励、HF、Cl2、Ηα、Sicu、體3、 =α4、脑3、CF4、（:2F6、c3F8、c4Fs、CHF3、SF6、NF3 1士或者疋讀上述任二種氣體以上使用。而触刻步 驟中同樣可以是選用含鹵素或是不含 可以是使用與充電步驟中不同的二=者: 反應氣體。當'然，餘刻氣體的選擇會依照 ΐ 度’以及對於膜層綱的_速率而 Ο ，膜層細的材f若為氧化碎，則多半是選用含 有齓化碳的蝕刻氣體，如CF4、、c F、 佐以氧氣（可加速氧化矽的蝕 3 8 4 8 3低 氧化石夕的細i速率）而進⑽刻料）h⑽（可降低 電源，控制其功率約於τ12。。如是開 面。其中i電出來的絲底表 的氣體如Ar、He、〇2、心=應:體例如是不含函素 乂 4 CH4，也可以是含s素的氣 11C In one embodiment of the invention, the dry etch mains power supply described above provides energy to form a plasma in the reaction chamber. In one embodiment of the invention, the dry etching bias power source described above provides energy to attract ionomers, layers, and layers in the reaction chamber. Scale, Partial Film Removal In the embodiment of the present invention, the above-described dry handle charging step is the same as the main mine ', ' in the remaining step. The source power can be the same as in the present invention. In the above charging step, the main power source is preferably in the range of 5 (10) to (9) " to shorten the time required for ionization. Between the watts, in the embodiment of the present invention, the above-mentioned dry type is in the charging step, the bias power supply is turned on, and the bias power supply is small. In the embodiment of the present invention, the above-mentioned dry type watt. The film layer comprises a ruthenium substrate. j clothes & wherein, in the embodiment of the present invention, the reaction gas used in the above dry charging step includes Ar, He, and I ranks, wherein at least - 2, HBr, Cl2, CF4, SF6 or NF3 Rose 2, CH4, 200917357 - doc / π In one embodiment of the present invention, at least one of the reaction gas package II of the process is used. 2 U4, sf6 or advanced dry-type process, before the start of the process, the first step is to charge the step to make the film surface _ the positively exposed ion 2 case ΐ _ layer exposed surface range Larger, there will be more continuation of the ruggedness 'can reduce the effect of the pattern evacuation zone effect', and thus mitigate the micro-load effect (micr〇_I〇ading) to make the above features and advantages of the present invention more obvious It is to be understood that the following is a detailed description of the following: [Embodiment] FIG. 2A to FIG. 2C are diagrams showing a dry money engraving process according to an embodiment of the present invention. Figure 3 is a dry residual reaction chamber of the present invention - an embodiment of the present invention. Clear reference ® 2A and Figure 3, this dry-type engraving process is suitable for the film layer 200, so that the film layer 200 Thereafter, patterns having different pattern densities are formed in different regions. In one embodiment, the film layer 2 is, for example, a pattern dense region 200a and a pattern evacuation region 2〇〇b. The film layer 2 is located, for example, The wafer 310 is placed in the reaction chamber 300 together with the wafer 310. The film layer 200 may be a germanium base. a dielectric layer, or a conductor layer, such as a conductor layer that will form an interconnect. The formation of the film layer 2〇〇 will vary depending on the material of the film layer, which may be chemical vapor deposition or physical gas 200917357 - - 31twf.doc / n phase deposition method. A mask layer 21 is formed on the film layer 200, and the pattern density of the mask layer 21 in the pattern dense area 200a is larger than the mask layer 21 in the pattern evacuation area 2001. The pattern density of the mask layer 210 is, for example, a dielectric material such as tantalum nitride, tantalum carbide, niobium nitrite or niobium oxynitride, which can be formed by chemical vapor deposition. Of course, with the underlying film The material of the layer 2〇〇, the mask layer 210 may also be polycrystalline germanium or other materials. The mask layer 21〇 material may be determined according to the material of the lower film layer 200, and has different etching options from the film layer 2〇〇. "The material of the ratio is sufficient." Next, referring to FIG. 2B and FIG. 3, a charging step is performed to cause a plurality of positively charged ions to adhere to the surface of the exposed film layer 2. This charging step is, for example, in the reaction chamber 300. Produce plasma and make plasma The positively charged ions are attached to the surface of the film layer 200. Since the pattern density of the mask layer 21〇 above the film layer 200 is not -, the film layer of the 2QGa is tilted in the pattern, and the density of the pattern is large, bare. The film layer 200 has a small range, and therefore, there are relatively few ions located on the surface of the layer 200 in the region 2, and the mask layer 210 in the pattern evacuation region 2〇〇b is sparsely distributed, and relatively bare. The film layer 200 has a large area, and most of the ions gather in the film layer 2 (8) of the region. In other words, the film layer 2 of the pattern evacuation zone 2〇〇b is large due to the exposed surface, and the surface is attached. The number and density of ions are also greater than that of the film layer 200. Referring to FIG. 3, in an embodiment, the reaction chamber 300 is, for example, a plasma reaction chamber, a high-density plasma reaction chamber, and the reaction chamber 300 is, for example, remotely connected to a main power source 325 and a bias power source 335. . Among them, the main power milk such as 200917357 31twf.doc/n is to mention the energy and generate plasma in the reaction chamber, while the partial star power milk can lick the wire to shout the ion plasma into the ion (10) sub-county and _. The above charging step side is controlled by (4) the main Wei milk, the secret reaction lion produces plasma, so that the money towel has a positively charged ion domain in the film layer two electric steps, the power of the main power source 325 is controlled, for example. Between 500 and 〇 watts, using more than 500 watts of power is the time required for the charging step, and (iv) recording the ions to produce ions, and making the == layer thin exposed surface. As for the bias voltage, the power is turned off or on. If the bias power supply 335 is turned on, the power of the bias power supply 335 is turned on, and the milk is controlled at sn 3 H , to prevent the ions from going down to 5G watts or 疋 off bias power supply + Step 2C, after the charging step, 'the etching is followed. ^The surface of the film layer 2 (8) is adhered with the positive-trapped ions due to the above charging step. Therefore, when the ion bombardment is performed, the ions on the surface of the ruthenium film layer are blocked. The material that is bombarded downwards, ^ secret ^ rate side is in the bribe of the boat and the thin & = / knife 'because many ions are distributed on the surface, so the rate will decrease at this moment, and the micro-load effect is alleviated (10)^ad eff The influence of ^. In this way, the film layer 200 of the pattern evacuation area and the film layer of the 2GGa of the § name area can be reduced to the bias power supply, and the 335 is the main power source 325 for opening the reaction chamber 3〇0. A step is generated in the reaction chamber. The opening of the main power source 325 continues for a % water' bias power supply 335 to provide ion energy, 200917357 51twf.doc/n the exposed surface of the film layer 200. The power of the main power source ns is, for example, between 100 and 3000 watts, depending on the material of the etched layer 2, the predetermined etching rate, and the etching gas selected. In the charging step and the engraving step, the reaction chamber is filled with a reactive gas, and the voltage applied to the main power source 325 excites or dissociates the originally neutral gas molecules to form a plasma. In the charging step, the reaction gas of the 'element' such as Ar, He, h2, 〇2, N2 or CH4 may also use a halogen-containing gas such as excitation, HF, Cl2, Ηα, Sicu, body 3, =α4, brain 3 , CF4, (: 2F6, c3F8, c4Fs, CHF3, SF6, NF3 1 士 or 疋 read any of the above two gases used above. In the etch step, the same can be used halogen or not, can be used and charging steps The difference between the two = the reaction gas. When 'Ran, the choice of the residual gas will be in accordance with the degree of ' and the rate of the film layer Ο, the thin layer f of the film is oxidized, it is mostly used An etching gas containing deuterated carbon, such as CF4, c F, followed by oxygen (accelerating the oxidized cerium etch 3 8 4 8 3 low-oxidation stone) into (10) engraving) h (10) (can reduce the power supply The power is controlled to be about τ12. If it is an open surface, the gas of the bottom of the wire, such as Ar, He, 〇2, and heart = should be: the body is, for example, not containing the element 乂4 CH4, or it may be s prime gas 11
Htwf.doc/n η ο 200917357 體如 HBr、Cl2、CFV、π + _ 持續開啟主二後:進行侧步驟， 率會提高’以提供t _ f功 此時，主鹤錢壓電 =;:=:定，步驟中使用、=二 : 提如 HBr、Cl2、％、sf6 或 nf3。 4所述’上述實施例中提出之 钱刻步驟之前，先進行充雷1^的方法在 面附著了許多帶正ΐ:;:步：:使圖案疏散區之膜層表 降低速率將會減緩，進而 一性都有= 謂於保持元件整趙的電性與均 ρρ Α Γί本發明已以較佳實施例揭露如上，㈣並非用以 脫所屬技術領域中具有通常知識者，在不 脫離柄明之精神和範_，當可作 不 =本發明之賴_當簡狀巾料概_=者 【圖式簡單說明】 疋習知之-種乾式㈣製程的剖面示。 圖2Α至圖2C是依昭太恭日日 _ 製程的剖面示意圖。本發明—實施狀—種乾式餘刻 圖疋、曰不本么明—實施例之—種乾式钱刻反應室。 12Htwf.doc/n η ο 200917357 Body such as HBr, Cl2, CFV, π + _ Continue to open the main two: after the side steps, the rate will increase 'to provide t _ f work at this time, the main crane money piezoelectric =;: =: fixed, used in the step, = two: such as HBr, Cl2, %, sf6 or nf3. 4 Before the method of the engraving step proposed in the above embodiment, the method of charging the first step is attached to the surface with a lot of positive ΐ:;: step:: the rate of reduction of the film surface of the pattern evacuation zone will be slowed down. And the nature of the element is the same as that of the πρ Α Γ 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本 本The spirit and the norm of the Ming dynasty, when it can be done = not the invention _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Figure 2Α to Figure 2C are schematic cross-sectional views of the process. The invention - the embodiment - a dry type of engraving, the figure is not the case - the embodiment - a dry type of money engraving reaction chamber. 12
Htwf.doc/n 200917357 【主要元件符號說明】 100、200 :膜層 100a、200a :圖案密集區 100b、200b :圖案疏散區 110、210 :罩幕層 300 :反應室 310 :晶圓 325 :主電源 P 335 :偏壓電源Htwf.doc/n 200917357 [Description of main component symbols] 100, 200: film layers 100a, 200a: pattern dense regions 100b, 200b: pattern evacuation regions 110, 210: mask layer 300: reaction chamber 310: wafer 325: main Power supply P 335 : bias supply
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