200917349 九、發明說明： 【發明所屬之技術領域;j 發明領域 本發明概有關由半導體晶圓、平板顯示器或其它碟形 5 結構物之邊緣排除區和斜面區域來清潔及除去製程殘留材 料的裝置和方法。 【先前技術:j 發明背景 當半導體晶圓處理時，各種薄膜(例如金屬、氧化物、 ίο氮化物、碳化物、和聚合材料等）會被敷設於晶圓的頂面 上，在該處會有一二維的微晶片陣列被製成。在該晶圓的 圓周處係為一 “邊緣排除區”環及一側面，其中沒有微晶 片’而容許機械臂來移送該等晶圓。所敷設的薄膜會延伸 遍佈該頂面的邊緣排除區，且時常會“包捲繞過，，該斜面而 15延伸至該晶圓的反面上。由該邊緣排除區' 斜面和反面上 除去過多的薄膜材料’會在半導體的製造中逐漸變得更為 重要。因若未被除去，則在邊緣和斜面區域上的殘留材料 將會剝落或分層和重分佈，致在關鍵的晶圓表面上造成瑕 疵，而使良率衰減。已被證明者由晶圓的邊緣和反面清除 20不要的薄膜或其它材料，將能減少交叉污染並增進晶圓的 良率約 10%(請參見 j. D. Morillo, T. Houghton 及 J. M. Bauer ’ 專人之“Edge and bevel automated defect inspection for 300mm production wafers in manufacturing”，2005 IEEE/SEMI Advanced Semiconductor Manufacturing 200917349200917349 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates generally to apparatus for cleaning and removing process residue materials from edge exclusion regions and bevel regions of semiconductor wafers, flat panel displays or other dish-shaped 5 structures. And methods. [Prior Art: BACKGROUND OF THE INVENTION When semiconductor wafers are processed, various films (such as metals, oxides, nitrides, carbides, and polymeric materials) are applied to the top surface of the wafer where they are A two-dimensional array of microchips is fabricated. At the circumference of the wafer is an "edge exclusion zone" ring and a side surface in which there is no microchip "and allows the robotic arm to transfer the wafers. The applied film will extend over the edge exclusion zone of the top surface and will often "wrap over, and the bevel 15 extends to the opposite side of the wafer. From the edge exclusion zone" excessive removal of the bevel and reverse faces The thin film material 'will become more and more important in the manufacture of semiconductors. If not removed, the residual material on the edge and bevel areas will peel off or layer and redistribute on the critical wafer surface. This causes defects and attenuates yield. It has been proven that removing 20 unwanted films or other materials from the edge and back of the wafer will reduce cross-contamination and increase wafer yield by about 10% (see j. D. Morillo, T. Houghton and JM Bauer 'Edge and bevel automated defect inspection for 300mm production wafers in manufacturing', 2005 IEEE/SEMI Advanced Semiconductor Manufacturing 200917349
Conference)。有見於邊緣或斜面污染會減少生產良率的潛 在可能’故乃有需要提供一種新穎且改良的方法來由有影 響的區域除去不要的微粒殘屑。 被用來清潔晶圓邊緣和斜面的構造係已習知，有些係 5被揭述於以下的美國專利中。 美國專利N〇_ 6,874,510 B2(Reder等人)揭述一可變功 率的雷射束被以—斜角導向一晶圓邊緣。一包圍該雷射束 的同心通道會提供一淨化氣體流來吹掉被該雷射束除去的 殘餘物。 10 美國專利公開案No. US 2005/0284576 Al(America等 人)揭述一環狀電漿被造成於一晶圓的邊緣處。薄膜材料的 選擇性移除係藉妥當地選擇造成該電漿的氣體來完成。 美國專利No· 6,910,240 Bl(Boyd等人)教示一種晶圓斜 面邊緣清潔系統，包含一多滚輪(驅動、定子和清潔）系統設 15 在一晶圓邊緣的周緣處，其會接觸該晶圓圓周的所擇區 域。由多種聚合物材料構成的擦洗墊等會襯墊個別的清潔 滾輪，它們會分開地清潔正面和反面的邊緣區域。清潔和 冲洗化學劑會被以一近旁的喷嘴來散佈在該等滾輪墊上。 美國專利No. 7,179，154 Bl(Boyd)揭示一種匣體構造包 2〇 含多數的滾輪(饋進、收取)具有一薄膜含有埋設的磨料。該 等埋設的磨料會被使用一第三滾輪來迫抵該晶圓邊緣。類 似前一專利，清潔係藉一喷嘴用以噴灑一化學溶液於該薄 膜上而來協助。 美國專利No. 6,797,074 B2(Bedeker等人）揭露一種含 200917349 有触刻劑的吸收性擦件，其會接觸一旋轉晶圓的邊緣，旋 轉係藉一系列接觸該晶圓邊緣的v形滾輪來提供。該 Redeker的專利之一第二態樣揭露一種充滿蝕刻劑的凹槽 (具有或沒有超音波換能器）’而一旋轉的晶圓之邊緣會被浸 5 入其中來清潔。 美國專利No. 6,309,981 Bl(Mayer等人）教示一種方 法，係藉控制由一靠近一晶圓邊緣的噴嘴所輸送之一黏性 的液體化學蝕刻劑，而來由該晶圓的邊緣和斜面區域除去 銅金屬。蝕刻劑會被以DI冲洗液清除，然後再用氮氣吹 1〇 乾0 美國專利No. 7,256，148 B2(Kastenmeier等人）係結合了 晶圓邊緣的電聚、凹槽（類似Redeker的專利）和刷子式清 潔。Kastenmeier揭露一小區域rF電漿源可供局部的邊緣清 潔’及一延伸的電漿產生環源用以覆蓋整個晶圓周緣。典 15型使用的電漿氣體係為氬、氮、和氧。在該“刷子，，實施例 中’配佈通道會供應化學劑至該接觸晶圓邊緣的刷子。 美國專利No. 6,837,967 Bl(Bennan等人)教示一種雙目 的環形氣體歧管，其亦可當作一放電電極，而構製成可將 處理氣體導至晶圓邊緣，磁性線圈會被策略地設置以協助 限制電漿排放於晶圓邊緣區域。該晶圓佈滿積體電路晶粒 的中央部份會被一中空頂板保護隔離電漿。注入該中空容 腔内的氣體會提供一反壓，其能阻止電漿氣體滲入不欲被 餘刻的區域。 美國專利No. 6,186,873 Bl(Becker等人)揭露〜種晶圓 200917349 ^緣清潔裝置’包含-對晶圓抓持件總成含有多數的研磨 —、惰齒輪，及單一個化學劑饋給的固定刷。 5 10 15 美國專利申請案No. US 2006/037648(Kim等人)教示_ 種電製_方法係可料清潔斜面邊緣和晶岐面。藉著 吏用適田的造型及RF充能之電極和介電環的設置，一小區 域電聚會被產生並限制於該晶圓的斜面區域。 °° 、在以上習知技術中所揭_存技術會較複雜，需要一 分開的阻抗塗層和#_序來清潔該晶圓邊緣，或使用多 個會機械磨損的移動部件，而需要時常更換構件。 用以清潔表面的電動水力（EHD)裝置和方法亦已習 知且此避免與上述技術相關連的問題。EHD霧化係為一 種方法可供將—導電㈣打散並配佈於—帶電的奈米細滴 集σ體（束）中。EHD裝置和方法係被揭述於美國專利N〇 6,033,484名稱為“使用能量團束來清潔污染表面的裝置，，； 及No_ 5,796,111名稱為“使用能量團束來清潔污染表面的方 法和裝置”，該兩案的完整内容併此附送。一帶電射束係藉 由一猎封的加壓貯槽將導電溶液沿一溶凝的二氧化矽、Conference). There is a potential for contamination at the edge or slope to reduce production yields. Therefore, there is a need to provide a novel and improved method for removing unwanted particulate debris from influential areas. Structures used to clean wafer edges and bevels are well known, and some are disclosed in the following U.S. patents. U.S. Patent No. 6,874,510 B2 (Reder et al.) discloses that a variable power laser beam is directed at an edge of the wafer at an oblique angle. A concentric channel surrounding the laser beam provides a stream of purge gas to blow off the residue removed by the laser beam. U.S. Patent Publication No. US 2005/0284576 Al (America et al.) discloses that a toroidal plasma is created at the edge of a wafer. The selective removal of the film material is accomplished by locally selecting the gas that causes the plasma. U.S. Patent No. 6,910,240 Bl (Boyd et al.) teaches a wafer bevel edge cleaning system comprising a multi-roller (drive, stator and cleaning) system 15 at the periphery of a wafer edge that contacts the wafer circumference Selected area. A scrubbing pad or the like composed of a plurality of polymer materials is padded with individual cleaning rollers which clean the front and back edge regions separately. Cleaning and rinsing chemicals are dispensed on the roller pads with a nearby nozzle. U.S. Patent No. 7,179,154 Bl (Boyd) discloses a mortuary construction package 2 〇 a plurality of rollers (feeding, receiving) having a film containing embedded abrasive. The embedded abrasive will be forced to the edge of the wafer using a third roller. Similar to the previous patent, the cleaning system assists by spraying a nozzle onto a spray of a chemical solution. U.S. Patent No. 6,797,074 B2 (Bedeker et al.) discloses an absorbent wiper comprising a 200917349 etchant that contacts the edge of a rotating wafer by a series of v-shaped rollers that contact the edge of the wafer. provide. A second aspect of the Redeker patent discloses a etchant-filled recess (with or without an ultrasonic transducer) and the edge of a rotating wafer is immersed therein for cleaning. U.S. Patent No. 6,309,981 Bl (Mayer et al.) teaches a method for controlling the edge and bevel regions of a wafer by controlling a viscous liquid chemical etchant delivered by a nozzle adjacent the edge of a wafer. Remove copper metal. The etchant will be removed with a DI rinse and then blown with nitrogen. US Patent No. 7,256,148 B2 (Kastenmeier et al.) combines electropolymerization and grooves at the edge of the wafer (similar to Redeker's patent). And brush cleaning. Kastenmeier reveals a small area of rF plasma source for local edge cleaning and an extended plasma generating ring source to cover the entire wafer perimeter. The plasma gas system used in the Model 15 is argon, nitrogen, and oxygen. In the "brush, in the embodiment", the distribution channel will supply a chemical agent to the brush at the edge of the contact wafer. U.S. Patent No. 6,837,967 Bl (Bennan et al.) teaches a dual purpose annular gas manifold which can also be used as A discharge electrode is configured to direct the process gas to the edge of the wafer, and the magnetic coil is strategically placed to assist in limiting plasma discharge to the edge region of the wafer. The wafer is filled with the center of the integrated circuit die Part of the plasma is protected by a hollow top plate. The gas injected into the hollow chamber provides a back pressure that prevents the plasma gas from penetrating into areas that are not desired to be left. US Patent No. 6,186,873 Bl (Becker et al. (a) US Patent Application 200917349 ^Edge Cleaning Device' contains - a wafer holder assembly containing a majority of grinding -, idler gear, and a single chemical feeding fixed brush. 5 10 15 US Patent Application No. US 2006/037648 (Kim et al.) teaches that _ electric system _ method can clean the bevel edge and the crystal face. By using the shape of the field and the setting of the RF charging electrode and the dielectric ring, A small area electric party was created and Made in the bevel area of the wafer. ° °, in the above-mentioned prior art, the technology will be more complicated, requiring a separate impedance coating and #_ sequence to clean the edge of the wafer, or use multiple Mechanically worn moving parts, which need to be replaced from time to time. Electric hydraulic (EHD) devices and methods for cleaning surfaces are also known and this avoids the problems associated with the above techniques. EHD atomization is a method available - Conductive (iv) dissipated and distributed in a charged nano-droplet set σ body (beam). The EHD device and method are described in U.S. Patent No. 6,033,484 entitled "Using Energy Clusters to Clean Contaminated Surfaces" The device, and; and No. 5,796,111 are entitled "Methods and Apparatus for Using Energy Clusters to Clean Contaminated Surfaces", the complete contents of which are hereby incorporated. A charged beam is a conductive solution along a dissolved cerium oxide by a sealed pressurized storage tank.
Teflon、PEEK或其它適當材料製成的傳輸管輸送至一含有 一小孔的電化喷嘴而來產生。為促發該EHD束，一靜電應 20力會施加於該溶液，其會使形成於該噴嘴之小孔處的弧曲 液面介面充電。當所施加的靜電應力超過保持該弧曲液面 的表面張力時，該溶液將會崩散而形成一奈米滴束。 儘管EHD表面清潔方法和裝置具有許多優點，但仍有 需要改良的方法和裝置可用來清潔晶圓邊緣和斜面，其係 200917349 比先前的方法和裝置更簡單，更精小、耐用、便宜且更有 效者。 【發明内容】 發明概要 5 本發明得知毛細管發射器可為導電或不導電的，故本 發明的任何實施例乃可依需要來併設導電發射器、不導電 發射器或甚至該兩者之組合。若發射器接收一用以電喷灑 的液體時，則一束主要為高能量的多數帶電團或細滴（包括 奈米滴）會被產生，其會特別地適用於蝕刻、粗化及/或去 10 除。若發射器接收一用以離子化的氣體時，則一束主要為 高能量的單一帶電離子將會被產生，其會特別地適用於濺射。 在本發明之一實施例中，一可適於處理一晶圓之頂面 和底面邊緣區域的毛細管發射器裝置係具有至少二毛細管 發射器被大致地以相對構形及/或呈斜角來列設，各毛細管 15 發射器皆可產生一束高能量粒子冲擊在該晶圓之一不同的 邊緣區域。該裝置亦包含一晶圓卡盤可適於支撐並旋轉該 晶圓，以使該等邊緣區域暴露於該高能粒子束。預期該毛 細管發射器裝置可為導電的以供承接一氣體或一液體，或 為不導電的用以承接一液體。若該裝置承接一液體，則該 20 粒子束主要包含多數帶電的粒子。若該裝置承接一氣體， 則該粒子束主要包含單個帶電的粒子。在任一情況下，該 等粒子束皆可除去薄膜及/或微粒，尤其是平均直徑約 Ιμπι或更小的微粒。本發明亦考量使用一單體來保護該晶 9 200917349A transfer tube made of Teflon, PEEK or other suitable material is delivered to an electrowinning nozzle containing a small orifice. To promote the EHD beam, an electrostatic charge is applied to the solution which charges the arc liquid level interface formed at the orifice of the nozzle. When the applied electrostatic stress exceeds the surface tension that maintains the surface of the arc, the solution will collapse to form a nanodroplet. Despite the many advantages of EHD surface cleaning methods and devices, there is still a need for improved methods and apparatus for cleaning wafer edges and bevels that are simpler, more compact, durable, cheaper and more reliable than previous methods and devices. Effective. SUMMARY OF THE INVENTION The present invention recognizes that a capillary emitter can be electrically conductive or non-conductive, so any embodiment of the present invention can be provided with a conductive emitter, a non-conductive emitter, or even a combination of the two. . If the emitter receives a liquid for electrical spraying, a bundle of mostly charged or mostly fine droplets (including nanodrops) will be produced, which will be particularly suitable for etching, roughening and/or Or go to 10 to remove. If the emitter receives a gas for ionization, then a single, highly energetic, single charged ion will be produced which is particularly suitable for sputtering. In one embodiment of the invention, a capillary emitter device adapted to process a top surface and a bottom edge region of a wafer has at least two capillary emitters that are generally in an opposite configuration and/or at an oblique angle. As a result, each of the capillary 15 emitters can generate a beam of high energy particles that impinge on a different edge region of the wafer. The apparatus also includes a wafer chuck adapted to support and rotate the wafer to expose the edge regions to the high energy particle beam. It is contemplated that the capillary emitter device can be electrically conductive for receiving a gas or a liquid, or non-conductive for receiving a liquid. If the device is subjected to a liquid, the 20 particle beam mainly contains mostly charged particles. If the device is subjected to a gas, the particle beam mainly comprises a single charged particle. In either case, the particle beams can remove the film and/or particles, especially particles having an average diameter of about Ιμm or less. The invention also contemplates the use of a monomer to protect the crystal 9 200917349
粒區域；及—中和器來減少該晶圓之# _押I 在本發明Μ，1 表面的靜電充入。 个赞叼的另一誶細實施一 、 係可適於處理一 θ η 毛、、、田s發射器系統 一 日日圓的頂面和底面邊緣區域，而且右 一毛細營路m — Λ 叫具有至少 一f 歧官會圍繞-晶圓環周地排列，1Φ “、 支皆具有至少-革g6 /、中至:>、The grain region; and the neutralizer to reduce the electrostatic charge of the surface of the wafer. Another fine implementation of the singularity is that it can be adapted to handle the top and bottom edge regions of the one-day yen of the θ η hair, and the _ emitter system, and the right capillary channel m — Λ has At least one of the squadrons will be arranged around the wafer, 1 Φ ", the branches have at least - leather g6 /, medium to: >,
取奴 少一毛細官發射器大致呈相對構形欠U 管發射器皆可產生一束古处L + τ構开广各毛細 同的邊、㈣擊在^圓之一不 圓的、喜域上。轉毛細f發射11可被㈣丨來冲擊該晶 圓的邊緣區域及/或斜面。 f擎"曰曰 10 15 =明亦有關產生咖束和離子束以供清除晶圓邊緣 •斜_薄膜與微粒，㈣是平均直徑大㈣m或更 之微粒等的方法。液體或氣體會被輸送至導 細 發射器來產生高能量的聚團、細滴（包括奈米滴）或離子的射 束。液體會被輸送至非導電性毛細管發射器來造成高能量 的聚團及/或細滴(包括奈米滴)的射束。藉著改變操::數 (包括施於發射器、浸人電極及/或抽取電極的電壓，和氣體 或液體起始齡的含量等）’職粒子束的触和尺寸將可 依須要來被改變。 優點將可料所附圖式 。應請瞭解所擇的結構 俾能提供其餘結構和特 本發明之這些及其它的特徵與 參閱以下的詳細說明而更佳地瞭解 和特徵可能未被示於某些圖式中， 徵的較佳觀視。 圖式簡單說明 第la圖係為一晶圓的頂視圖。 第lb圖為第la圖中之晶圓沿a_a線的載面圖 20 200917349 第2a圓為—具有一導電性 施例的側視圖。 屬之毛細官發射器頭實 第2b圖為〜具有一非導電性發射器之 實施例的側視圖。 目發射益頭 5 10 15 第3a圖為—併設多個導電性 發射器裝置實施例的側視圖。為碩之毛細管 其發射-^併°又^個非導電性毛細管發射器頭之毛細 吕發射态裝置實施例的側視圖。 第4a圖為另一併設多個導電性毛細 管發射器裝置實施例的側視圖。 n 、、、田 *第4b圖為p併設多個非導電性毛細管發射 毛 細管發射器裝置實施例的側視圖。 11 第5a圖為〜併設多個導電性 &対町為歧f之毛細 s發射态系統實施例的頂視圖。 第5b圖為—併設多個非導電性毛細管發射器歧管之毛 、'田官發射器系统實施例的頂視圖。 【實施冷式】 較佳實施例之詳細說明 請參閱第la及lb圖，本發明係有關毛細管發射器裝置 矛方法，其可用以清潔晶圓’包括—晶圓155的某些表面區 域和形成部份，包㈣面135與底面136的圓周“排除區，，邊 緣145和146(或周緣環）及其間之〜斜面丨47，其可具有一平 直或彎曲的載面。該晶圓亦可具有一凹槽12〇或平直邊緣 123，其係被提供來作該晶圓的定向參考。依據本發明，毛 20 200917349 細管發射器技術係被用於產生電動水力（EHD)射束或離子 電動(ED)射束來處理晶圓邊緣、斜面和其它的形成部份， 以供除去薄膜及/或微粒，尤其是尺寸（或“平均直徑，，，於此 係可與“尺寸，，互換使用）為1微米（μπι)或更小之微极的表面 5 清潔。如下所述，EHD射束係藉使用一由一毛細管發射器 散佈的液體溶液來產生。而離子ED射束係藉使用一毛細管 發射器散佈的氣體或蒸汽來產生。又，毛細管發射器裝置 可併設一導電性毛細管發射器或一非導電性毛細管發射 器。（在前者情況下，若輸送至該等毛細管發射器的源成分 1〇係為一氣體或蒸汽，則該導電性毛細管發射器亦稱為 “Capillaritron” 一毛細管器）。 第2a圖示出一併設一導電性毛細管發射器32的毛細管 發射器頭10之實施例。導電性流體（氣體或液體）會由貯槽18 流經流體導道20 ,並被輸送至暴露於高真空的導電性毛細 15皆發射器32。當該流體達到毛細管末端33時，其會進入一 藉施加高電壓於該導電性毛細管發射器3 2所形成的強烈靜 電場區37中。一較適宜的電壓可在利用一供電器17所施加 的大約+8〜+ 120kV之範圍内。該電場37係建立於該末端33 與一抽取電極30之間，其電位係可藉一供電器19來調整。 產生在该末端33處之較強的電場(>1〇5v/cm)會使靜電力作 用於該導電流體的暴露表面。當施加於該導電性毛細管發 射為32的電位增加時，則作用在該末端33處之流體表面上 的靜電力亦會增加，直到-超過令該流體保持在一起之表 面張力S的值被達到為止。該流體將會崩散成—帶電團的集 12 200917349 合體而形成一射束34。若一正高電壓利用該供電器17施於 該毛細管32，則該射束34中的粒子會帶正電。或者，若一 負高壓被施於該毛細管32，則該射束34將會由充帶負電的 粒子所構成。 5 若該流體是液體，則該高能粒子束主要係由多數的帶 電團和細滴（包括奈米滴）所組成。若該流體為氣體，則該高 能粒子束主要是由單一的帶電離子所構成。在任一情況 下，該等射束粒子皆會具有一大約Ιμηι或更小的平均直徑。 第2 b圖示出一併設一非導電性毛細管發射器3 2之毛細 10 管發射器頭11的實施例。該裝置11的構造和操作係大致類 似於前述的裝置10，但具有包括如下所述的差異。導電溶 液或液體16係儲存於貯槽18中，在該處其會被一浸入的充 電電極15藉由供電器17以一在約+8至+20kV範圍内的適佳 電壓來帶電化。該電位的流體會流經流體導道20，並被輸 15 送至該毛細管32，而電場37會建立於該末端33與一抽取電 極30之間，其電位係可利用一供電器19來調整。當施於該 浸入電極15的電壓增加時，則作用在該末端33處之流體表 面上的靜電力亦會增加，直到一值被達到為止，其會超過 使該流體保持在一起的表面張力S。該流體會崩散成一帶電 20 團的集合體而形成一射束34。同樣地，若一正毫電壓藉由 供電器17施加於該浸入電極15，則該射束34中的粒子將會 帶正電。或者，若一負高壓被施於該浸入電極15，則該射 束34將由帶負電的粒子來組成。 第2b圖中的裝置11係最適合用於輸送一液體至該非導 13 200917349 電性毛細管發射器32以產生一高能粒子束，其主要係由多 數帶電聚團和細滴（包括奈米滴）等所組成，其中該等粒子具 有一大約1 μηι或更小的平均直徑。 第3a和3b圖示出一毛細管發射器裝置100的實施例，其 5 併設數個毛細管發射器頭120會產生速度和尺寸受控制的 粒子以供清潔一標的晶圓155。具言之，高能量粒子，包括 離子、聚團及/或細滴（例如奈米滴）的射束134會被導向並冲 擊在該晶圓之頂面和底面的邊緣排除區145和146上。所示 的裝置100之實施例包含至少一對發射器頭120，其各具有 10 一毛細管發射器160而在末端設有一微孔隙。該各發射器 160的末端係大致設在一各自的抽取電極130之一中央孔隙 中。該等抽取電極係連接於一供電源116。儲存在貯槽110 内的流體會經由傳輸管線100被輸送至設有發射器160的各 頭120。管線125會將流體配佈至各頭120，而當達到該發射 15 器160的末端時將會形成高能量的離子、聚團及/或細滴之 導向射束134。 請參閱第3a圖，若該等毛細管發射器160是導電的，則 貯槽110會供應一氣體或一液體至該等發射器160，且電源 117會經由線路113對其施加一電壓。若氣體作為一源成 20 分，則該射束係主要包含高能量的單一帶電離子。若液體 作為一源成分，則該射束會包含高能量的多數帶電聚團及/ 或細滴，包括奈米滴等。 請參閱第3b圖，若該等發射器160是不導電的，則貯槽 110會對發射器160供應一液體，其會被一由電源117經線路 14 200917349 112來供電的浸入電極il5所充電。如此造成的射束包含高 度充能的聚團和細滴，包括奈米滴等。該電極丨丨5可由單原 子的金屬元素、二元金屬合金、三元金屬合金、四元金屬 合金及玻璃狀碳或其組合物等來構成。 5 熟習該技術者應可瞭解，藉著改變操作參數（包括施於 該等發射器160、浸入電極115及/或抽取電極13〇的電壓， 及氣體或液體的起始成分含量等），則該等射束粒子的特性 和尺寸將能依需要被改變。又，如一種不同於該加壓貯槽 輸送溶液至發射器的方法，一直接驅送機構譬如一注射泵 10 亦能被用於溶液傳輸。 如在第3a及3b圖中所示，該等毛細管發射器16〇係呈一 大致相對的構升>來互相面對，而使各別導出的射束134會衝 擊位於其間之晶圓155的邊緣145和146。熟習該技術者應可 瞭解，該射束與晶圓邊緣表面之蝕刻和彈道動力的交互作 15用將可用以除去薄膜和碎屑。因此，該晶圓155能被安裝在 許多種該產業之業者公知的晶圓卡盤14〇之一者上，並藉一 轉軸機構150以一圓形運動移動而使該晶圓邊緣通過該射 束底下。 如所示，該等發射器160係與該垂線大約呈〇度來垂直 20地射入該晶圓，且會垂向地對準以供同時地清潔對應的頂 部和底部邊緣145和146。但是，本發明亦提供該等發射哭 160能與垂線呈大約40至60度之間的入射束角來衝擊晶圓 邊緣145和146，雖各發射器亦可依須要而具有—與其它發 射器不同的入射角。該等射束可被呈一斜角導至該晶圓邊 15 200917349 緣以確保該等射束會由該晶圓之一中央部份將碎屑清除 掉故以一發射器160來操作（包括同時地操作）時，將不必 轉X曰曰圓來供清潔正面和反面的邊緣。在—實施例中， °亥等毛射态160的末端與晶圓邊緣之間的間隔係為約0.250 5 至 0.750 叫·。 為防止由晶圓邊緣移除的碎屑會集在該晶圓的敏感表 面上’―覆罩125會被裝在緊鄰該晶®頂面處而僅暴露出周 緣 145。 被％噴灑的液體溶液可由—單成分有機或無機液體或 10 -或多種化學性不同成分的混合物來構成。電魏液體之 例包括但不限於：水、醇類（甲醇、2_丙醇(IpA)、乙醇）、 甘油經胺、乙二醇、甲醯胺、正甲基吡洛嗣（N鮮）、過 氧化氫、TMAH、硝酸、鹽酸、碟酸、硫酸、氣氣酸和氮 氧化銨等。精習該技術者應可瞭解許多上述的化學物能被 、午夕方式、·且s，而來製備足以產生適當射束的溶液 混合物。在某些用途中，該液體的導電性可能會太低或太 1而不能相所需的粒子尺寸和速度之射束性質。於此等 f月况下’所添加的酸性或驗性化學物劑量會被增加或降低 以達到所需的射束性質。導電性添加劑可包含揮發性鹽類 20 (例如乙酸銨）。 在"玄等π錄子與晶圓邊緣碰撞時所移轉的衝擊能量 會使巧染的薄膜和殘屬由該晶圓邊緣的表面移除。例如， 研九已也貝|入的EHD射束能由晶圓邊緣除去聚合物和 其匕的殘餘物。一沈積於一晶圓邊緣的氟聚合物膜經電聚 16 200917349 處理之後，在暴露於一20kV，0.5μΑ的甲醯胺奈米滴射束後 會被完全地除去。薄膜的去除速率係被顯示有賴於分開該 EHD奈米滴源與該晶圓邊緣的距離，射束流和加速電壓。 晶圓邊緣清潔時間係可藉減少該EHD奈米滴射源與標靶距 5 離，及增加該奈米滴射束流而來減少。為進一步簡化用以 除去材料之EHD射束的能力、多用性和範圍，表1乃示出由 半導體晶圓除去各種不同薄膜材料的蝕刻速率。 表1 EHD射束蝕刻速率 由晶圓除去 的薄膜材料 鞋刻速率 (nm/min) 溶液A ϋ刻速率 (nm/min) 溶液B 银刻速率 (nm/min) 溶液C 鋁 97 60 27 銅 40 48.6 38.5 氮化物 37.5 51.7 72 氧化物 135.7 41.8 85 鎢化鈦 20 58.3 47 光阻 1400 2000 1950 10 其中： 溶液Α包含一種過氧化氫與硝酸的混合物，其中之一該 混合物具有大約30ml的30% H202和大約60微升的 70%HN〇3。 溶液B包含一種過氧化氫與氫氧化銨的混合物，其中之 15 一該混合物具有大約30ml的30% H2〇2和大約30微升的30% NH4OH。 溶液C包含一種碟酸、水和确酸的混合物，其中之一該 混合物具有大約26.3ml的水，大約3.75ml的80% H3P04，和 17 200917349 大約187微升的70% HN〇3。 如熟習該技術者所瞭解，表1中的EHD射束敍刻速率並 不僅限於表1中所顯示的各值，且較高的速率可藉最佳化該 處理構造、射束流、射束衝擊能量和EHD蝕刻溶液等來被 5 預期得到。 針對晶圓表面的清潔，該毛細管末端與抽取板之間的 靜電應力係藉一電壓源以大約10至20kV的較佳範圍來施 加。但是’應請瞭解在上述範圍之外的施加電壓亦能被使 用而不悖於本發明的精神和目的。 10 在第和3b圖所示的實施例中，該裝置1〇〇包含一中和 器135用以防止晶圓邊緣145和146及斜面147充帶靜電其 會使衝擊粒子的能量減少。一種用以中和射束的普遍技術 係使用一熱離子4〇或熱燈絲技術(參見第仏及沘圖）。但是， 燈絲4 4會傾向於易碎（故必須特別處理）。它們亦會因燒盡而 15有壽命限制，且會由於燈絲蒸發而成為一潛在污染源。 中和亦能使用微通道板技術來被達成，其可提供—均 勻南密度的電子流，非常適合於標靶或基材的中和。例如， 一電子產生器陣列（EGA)135能以低於lmw的輸入造成—中 和電子束來防止晶圓電荷積貯。在一種商業形式中，單獨 20的EGA係能僅使用〇.〇2w來提供— 1〇μΑ的電子束。 若為一“冷”電子源，則該EGA會使用數百萬個微孔坡 璃管熔凝成一機械性硬質結構。當一電壓（例如高達數kv) 被施在該EGA的輸入端時，即通過該EGA的厚度其典型為 約lmm，則各微孔會產生一電子束。該EGA不必熱俥時間， 200917349 若有亦很少，且會傾向於避免燒掉，其會耗盡燈絲。如精 習該技術者所瞭解，該EGA係依據場發射原理藉著在: EGA的輸入端產生電子來操作。由於電子的 屯丁旳取初爆發會下 移至s亥EGA的微孔，故其啦射可藉微通道板操作的原理而 5 倍增。 第4a和4b圖示出另一實施例的毛細管發射界裝置 200，其设有多數(例如至少3個）毛細管發射器，各且有 一錐形的末端240設有一微孔隙較好為一圓形開孔而具有 一 1至ΙΟΟμιη範圍内的直徑。一具有一大約5〇μηι之微孔隙的 10 毛細管喷嘴末端240已被證明可滿意地運作，尤其是當一氣 體被該導電發射器230(或“毛細管”)輸送來供離子化時。在 此情況下，請參閱第4a圖，該等導電發射器係電連接於高 正電壓源217。要在§玄毛細官末端240被離子化的氣體(例如 氬）係由一氣體入口 200饋供穿過一設在—歧管225内的氣 15體流道231，直至其達到該毛細管末端240為止。要被離子 化的氣體會被以一預定壓力饋供通過其中。 在操作時，一電漿會由於要被離子化的氣體中之原子 與由該毛細管壁（及/或由該電漿本身内）釋出的電子碰撞而 形成於該喷嘴末端240内部。到達該喷嘴孔隙的離子會被產 2〇生於該末端240與晶圓155之間的強烈發散電場朝外加速。 一如此形成之主要為單一帶電離子的離子束265將會冲擊 在該晶圓155的頂面和底面上之污染的邊緣區域丨45和 146，並濺射而由之蝕刻掉污染材料。所示之該裝置2〇〇的 實施例具有毛細管發射器230a和230b等，係構製成能以一 19 200917349 與垂線呈一大約40。至60。的角度來衝擊該晶圓邊緣145和 146。然而，一第三毛細管發射器^㈦係被構製成能以一大 致垂直的入射角來衝擊一斜面147，惟此角度亦可與其垂線 呈約40。至60。角。任何該等毛細管發射器，且尤其是該第 5 —發射器230c，皆能被安裝在一可動平台或類似物上，而 使入射角能在操作時改變，以供清潔具有彎曲截面的斜 面。一精習該技術者將會瞭解該晶圓155可被安裝在多種晶 圓卡盤140之一者上，並被一轉軸機構15〇以一圓形運動移 動，而使該等邊緣145和146及該斜面147通過離子束265底下。 1〇 由金屬化導體製成的毛細管末端或發射器會產生優異 的性能，惟具有一電極線穿經該孔延伸至該末端的陶瓷或 石英噴嘴末端亦可令人滿意地操作。 該裝置200亦包含一中和器235用以防止晶圓邊緣145 和146及斜面147帶電，其會致使衝擊粒子的能量減少。 15 雖第4a圖的實施例已在上文中被描述係以一氣體作為 源成分來造成離子束，但精習該技術者應可瞭解該裝置亦 能使用一液體作為源成分來造成EHD射束。且，該毛細管 發射器裝置亦可被用於使用非導電性發射器來電噴激一液 體，如在第4b圖中所示，其中有二發射器被構成可產生射 20束冲擊在邊緣區域145和146上，並有一第三發射器構製成 可產生一射束冲擊在斜面區域147上。一被供電源217供電 的電極215會被提供來充電該貯槽210中的液體。 第5a和5b圖示出一毛細管發射器系統3〇〇的實施例，其 併設有多個毛細管發射器歧管320(例如2個、3個、4個或更 20 200917349 多個）被構製成大致互相等距地環繞晶圓155的圓周排列。 每一歧管320皆含有二或更多個沈積頭342(在第5a圖中是 導電的，第5b圖中是不導電的）可利用第3圖或第4圖的前述 之頭構造來處理晶圓邊緣145和146及斜面147。一精習兮技 5術者將會瞭解更多的歧管亦可被添加來滿足所需的產出要 求。—中和器裝置3 2 5亦被包含以提供一電子源來防止電荷 積貯在晶圓邊緣145和146及/或斜面147上。 在第5a圖的實施例中，導電發射器342係藉供電源317 來供電。氣體或液體會由貯槽310饋供至各發射器342。在 10第5b圖的實施例中，液體係由貯槽310饋供，該液體會被一 由供電源317供電的電極315來充電。 為能最佳地清潔，該卡盤會以一方式旋轉該晶圓而 使該晶圓之一面的整個邊緣區域通過朝向該晶圓之該面的 所有發射器底下。但是，若時間或其它的因素有所限制， 則"亥卡盤忐以一方式旋轉該晶圓，而使在該晶圓的—面上 之一邊緣區域的任何部份僅通過一發射器或一有限的預定 數目之發射器底下。其它的旋轉圖案和方式亦有可能，乃 為熟習該技術者所瞭解。 、本發明之任何前述的實施例亦可適於清潔該晶圓邊緣 2〇或斜面中的細構或形成物，譬如被形成來作為晶圓基準和 疋向之用的平直邊緣123或-凹槽120(參見第lagJ)。—或多 個毛細管發射器能夠依需要而被可移動地定向來在該平直 邊緣或凹槽中或周圍處理和清潔。 依據本發明的另一特徵，一種方法會被提供以使用— 21 200917349 受限制且良好導向的高度充能粒子之高能量咖或ED射 束，包括聚團、細滴、和離子等，來處理一晶圓或碟片的 邊緣、凹槽和斜面區域。聚團和細滴等係藉令一液體種物 流經一導電性或非導電性的毛細管喷嘴或發射器而被產 EHD射束會在當施加一電壓於一導電性嘴嘴或該液體 物本身日禮促發。該液體溶液可由_單成分的有機或無 機液體或或更多種化性不同成分的混合物來構成。電喷 灑液體之例乃包括但不限於：水、醇類（甲醇、2-丙醇(IPA)、 醇）甘油羥胺、乙二醇、甲醯胺、正甲基咐^各酮(NMp)、 1〇過乳化氫、™AH、硝酸、鹽酸、磷酸、硫酸、氫氟酸和 虱氧化銨等。精習該技術者應瞭解許多上述的化學物可被 以許多方式組合來製備以產生觀腦射束齡液混合物。 另一方面該等離子係藉令一氣體或蒸汽種物流經一導 电性毛細官喷嘴（包括利用一電極導線以使其導電者），它們 15的孔隙直徑係約為50^m或更小，而被產生。離子ED射束的 促發會在對該金屬喷嘴施加一電壓時瞬間發生（其操作理 5W 和裝置構造凊參見.“Capillaritron: A new, versatile ion source’’，Appl. Phys. Lett. 38, 320, 1981，及Perel等人的美國 專利No· 4,318,028)。該離子源可由任何氣體種物(例如氬、 20氦、氮、氧、氙和氫）包括反應性氣體和分子複合物等來產 生離子束。 該離子束钮刻速率係為該噴嘴(加速）電壓，入射角度， 所用氣體種物，及蝕刻材料特性等之一函數。針對大部份 的晶圓薄膜’一最大蝕刻的較佳離子束入射角度係在與垂 22 200917349 線呈約40°至60°之間。針對超過500種不同的材料使用一 500V的鼠離子束之公知的敍刻速率係約為至 400nm/min(參見 Commonwealth sciemific c〇rp〇rad〇n.Take a slave and a capillary actuator. The emitters are roughly in a relative configuration. The U-tube emitters can produce a bunch of ancient places. The L+ τ structure opens up the sides of the same capillary, and (4) hits one of the ^ circles. on. The hair capillary f emission 11 can be impacted by the (four) 丨 to the edge region and/or the slope of the crystal. f 擎 " 曰曰 10 15 = Ming is also related to the generation of coffee and ion beams for the removal of wafer edges • oblique _ film and particles, (d) is the method of large average diameter (four) m or more particles. Liquid or gas is delivered to the fine emitter to produce high energy agglomerates, fine droplets (including nanodroplets) or ion beams. The liquid is delivered to a non-conductive capillary emitter to create a beam of high energy agglomerates and/or fine droplets (including nanodroplets). By changing the operation:: number (including the voltage applied to the emitter, the electrode and/or the extraction electrode, and the initial age of the gas or liquid), etc., the contact size of the job beam will be able to be change. Advantages will be made in the drawings. It is to be understood that the structure selected may provide the remaining structure and these and other features of the present invention and that the detailed description below may be better understood and the features may not be shown in some of the drawings. Viewing. BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a top view of a wafer. Figure lb is a view of the wafer along line a_a in the first drawing. 20 200917349 Line 2a is a side view with a conductivity example. The capillary actuator head of Figure 2b is a side view of an embodiment having a non-conductive emitter.目目益头 5 10 15 Figure 3a is a side view of an embodiment of a plurality of conductive emitter devices. A side view of an embodiment of a capillary-emitting device that emits a ^ ^ and a non-conductive capillary emitter head. Figure 4a is a side elevational view of another embodiment of a plurality of electrically conductive capillary emitter devices. n, , , and * * Figure 4b is a side view of an embodiment of a plurality of non-conductive capillary-emitting capillary emitter devices. 11 Figure 5a is a top view of an embodiment of a capillary s-emitting system with a plurality of conductive & Figure 5b is a top view of an embodiment of a 'Tianguan launcher system' with a plurality of non-conductive capillary emitter manifolds. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Referring to Figures la and lb, the present invention relates to a capillary emitter device spear method that can be used to clean wafers including certain surface regions and formation of wafers 155. The portion, the (four) face 135 and the bottom surface 136 of the circumference "excluding zone, the edges 145 and 146 (or the peripheral ring) and the bevel 丨 47 between them, which may have a flat or curved carrier surface. There may be a recess 12 〇 or a straight edge 123 that is provided as an orientation reference for the wafer. In accordance with the present invention, the hair 20 200917349 thin tube emitter technology is used to generate an electric hydraulic (EHD) beam or An ion-electric (ED) beam to process wafer edges, bevels, and other forming portions for removal of films and/or particulates, especially in size (or "average diameter," and "dimensions," Used interchangeably) to clean the surface 5 of a micron pole of 1 micron (μm) or less. As described below, the EHD beam is generated by using a liquid solution dispersed by a capillary emitter. Spread using a capillary emitter The body or the steam is generated. In addition, the capillary emitter device may be provided with a conductive capillary emitter or a non-conductive capillary emitter. (In the former case, if the source component delivered to the capillary emitters is A gas or vapor, the conductive capillary emitter is also referred to as a "Capillaritron" capillary.) Figure 2a shows an embodiment of a capillary emitter head 10 with a conductive capillary emitter 32. Conductive fluid (Gas or liquid) will flow through the fluid channel 20 from the sump 18 and be delivered to the conductive capillary 15 exposed to the high vacuum, both of which will be in the emitter 32. When the fluid reaches the capillary end 33, it will enter a high load. The voltage is in the intense electrostatic field region 37 formed by the conductive capillary emitter 32. A suitable voltage can be in the range of about +8 to +120 kV applied by a power supply 17. The electric field 37 is established. Between the end 33 and an extraction electrode 30, the potential can be adjusted by a power supply 19. The strong electric field (> 1 〇 5 v / cm) generated at the end 33 causes an electrostatic force to act on An exposed surface of the conductive fluid. When the potential applied to the conductive capillary emits 32 increases, the electrostatic force acting on the surface of the fluid at the end 33 also increases until the surface that holds the fluid is maintained The value of the tension S is reached. The fluid will collapse into a set of charged groups 12 200917349 to form a beam 34. If a positive high voltage is applied to the capillary 32 by the power supply 17, the beam 34 The particles in the medium will be positively charged. Alternatively, if a negative high voltage is applied to the capillary 32, the beam 34 will be composed of negatively charged particles. 5 If the fluid is a liquid, the high energy particle beam is mainly It consists of a majority of charged groups and fine droplets (including nanodrops). If the fluid is a gas, the high energy particle beam is composed primarily of a single charged ion. In either case, the beam particles will each have an average diameter of about ημηι or less. Figure 2b shows an embodiment of a capillary 10 tube emitter head 11 with a non-conductive capillary emitter 32. The configuration and operation of the device 11 is generally similar to that of the device 10 described above, but with the differences described below. The conductive solution or liquid 16 is stored in a sump 18 where it is energized by a immersed charging electrode 15 by a power supply 17 at a suitable voltage in the range of about +8 to +20 kV. The potential fluid flows through the fluid channel 20 and is sent 15 to the capillary 32. The electric field 37 is established between the terminal 33 and an extraction electrode 30. The potential can be adjusted by a power supply 19. . When the voltage applied to the immersion electrode 15 is increased, the electrostatic force acting on the surface of the fluid at the end 33 is also increased until a value is reached, which exceeds the surface tension S which holds the fluid together. . The fluid will collapse into a collection of charged 20 clusters to form a beam 34. Similarly, if a positive millivoltage is applied to the immersion electrode 15 by the power supply 17, the particles in the beam 34 will be positively charged. Alternatively, if a negative high voltage is applied to the immersion electrode 15, the beam 34 will be composed of negatively charged particles. The device 11 of Figure 2b is most suitable for transporting a liquid to the non-conductive 13 200917349 electrical capillary emitter 32 to produce a beam of high energy particles, which are mainly composed of a majority of charged agglomerates and fine droplets (including nanodrops). Composition, wherein the particles have an average diameter of about 1 μηη or less. Figures 3a and 3b illustrate an embodiment of a capillary emitter device 100 in which a plurality of capillary emitter heads 120 are used to produce velocity and size controlled particles for cleaning a target wafer 155. In other words, high energy particles, including beams 134 of ions, agglomerates, and/or fine droplets (e.g., nanodroplets), are directed and impacted on edge exclusion zones 145 and 146 on the top and bottom surfaces of the wafer. . The illustrated embodiment of apparatus 100 includes at least one pair of emitter heads 120 each having 10 capillary emitters 160 and a microporous end at the ends. The ends of the emitters 160 are disposed substantially in a central aperture of a respective extraction electrode 130. The extraction electrodes are connected to a power supply 116. The fluid stored in the sump 110 is delivered to the heads 120 provided with the emitters 160 via the transfer line 100. Line 125 will distribute the fluid to each head 120, and when the end of the emitter 16 is reached, a high energy ion, agglomerate and/or fine droplet directed beam 134 will be formed. Referring to Figure 3a, if the capillary emitters 160 are electrically conductive, the sump 110 supplies a gas or a liquid to the emitters 160, and the power source 117 applies a voltage thereto via line 113. If the gas is used as a source for 20 minutes, the beam system mainly contains a single charged ion of high energy. If the liquid is used as a source component, the beam will contain a plurality of charged agglomerates and/or fine droplets of high energy, including nanodroplets and the like. Referring to Figure 3b, if the emitters 160 are non-conductive, the sump 110 supplies a liquid to the emitter 160 which is charged by a immersion electrode il5 powered by the power source 117 via line 14 200917349 112. The resulting beam contains highly charged agglomerates and fine droplets, including nanodroplets. The electrode crucible 5 may be composed of a single atom metal element, a binary metal alloy, a ternary metal alloy, a quaternary metal alloy, glassy carbon or a combination thereof. 5 Those skilled in the art will appreciate that by varying the operating parameters (including the voltage applied to the emitter 160, the immersion electrode 115 and/or the extraction electrode 13〇, and the initial component content of the gas or liquid, etc.) The characteristics and dimensions of the beam particles will be altered as desired. Further, a direct drive mechanism such as a syringe pump 10 can also be used for solution transfer, as a method different from the pressurized reservoir transport solution to the emitter. As shown in Figures 3a and 3b, the capillary emitters 16 are in a generally opposite configuration> to face each other such that the respective derived beam 134 strikes the wafer 155 therebetween. The edges 145 and 146. Those skilled in the art will appreciate that the interaction of the beam with the etching and ballistic dynamics of the wafer edge surface will be useful to remove film and debris. Therefore, the wafer 155 can be mounted on one of a number of wafer chucks 14 known to those skilled in the art, and the edge of the wafer is passed by the rotary mechanism 150 in a circular motion. Under the beam. As shown, the emitters 160 are incident perpendicular to the vertical line about 20 degrees perpendicular to the vertical line and are vertically aligned for simultaneous cleaning of the corresponding top and bottom edges 145 and 146. However, the present invention also provides that the launching cry 160 can strike the wafer edges 145 and 146 at an incident beam angle of between about 40 and 60 degrees from the vertical, although the emitters can also have as needed - with other emitters Different angles of incidence. The beams can be guided at an oblique angle to the edge of the wafer 15 200917349 to ensure that the beams will be removed by a central portion of the wafer and operated by a transmitter 160 (including When operating simultaneously, it is not necessary to turn the X circle to clean the edges of the front and back sides. In the embodiment, the interval between the end of the hair ray 160 and the edge of the wafer is about 0.250 5 to 0.750. To prevent debris removed from the edge of the wafer from collecting on the sensitive surface of the wafer, the cover 125 will be placed adjacent to the top surface of the wafer to expose only the perimeter 145. The liquid solution sprayed with % can be composed of a single component organic or inorganic liquid or a mixture of 10 or more chemically different components. Examples of electric fluids include, but are not limited to, water, alcohols (methanol, 2-propanol (IpA), ethanol), glycerol by amine, ethylene glycol, formamide, n-methylpyrrolidine (N fresh) Hydrogen peroxide, TMAH, nitric acid, hydrochloric acid, dish acid, sulfuric acid, gas acid and ammonium oxynitride. Those skilled in the art should be aware that many of the above-mentioned chemicals can be prepared in a midnight manner, and s, to prepare a solution mixture sufficient to produce a suitable beam. In some applications, the conductivity of the liquid may be too low or too large to achieve the desired beam size and velocity beam properties. The dosage of the acidic or prophylactic chemical added during this period will be increased or decreased to achieve the desired beam properties. The conductive additive may comprise a volatile salt 20 (e.g., ammonium acetate). The impact energy transferred when the "Xuan and other π-records collide with the edge of the wafer causes the dyed film and residue to be removed from the surface of the wafer edge. For example, the EHD beam can remove the polymer and its residue from the edge of the wafer. A fluoropolymer film deposited on the edge of a wafer is completely removed after exposure to a 20kV, 0.5μΑ carbamide nanodroplet beam after electropolymerization 16 200917349 treatment. The removal rate of the film is shown to depend on the distance separating the EHD nano drop source from the edge of the wafer, the beam current and the accelerating voltage. The wafer edge cleaning time can be reduced by reducing the distance between the EHD nano drop source and the target and increasing the nanodrop beam current. To further simplify the ability, versatility, and range of EHD beams used to remove materials, Table 1 shows the etch rates for removing various film materials from semiconductor wafers. Table 1 EHD beam etch rate film material removal rate by wafer (nm/min) Solution A engraving rate (nm/min) solution B silver engraving rate (nm/min) solution C aluminum 97 60 27 copper 40 48.6 38.5 Nitride 37.5 51.7 72 Oxide 135.7 41.8 85 Titanium tungsten 20 58.3 47 Photoresist 1400 2000 1950 10 where: The solution Α contains a mixture of hydrogen peroxide and nitric acid, one of which has approximately 30 ml of 30% H202 And about 60 microliters of 70% HN〇3. Solution B comprises a mixture of hydrogen peroxide and ammonium hydroxide, wherein 15 of the mixture has about 30 ml of 30% H 2 〇 2 and about 30 μl of 30% NH 4 OH. Solution C comprises a mixture of dish acid, water and acid, one of which has about 26.3 ml of water, about 3.75 ml of 80% H3P04, and 17 200917349 of about 187 microliters of 70% HN〇3. As will be appreciated by those skilled in the art, the EHD beam characterization rate in Table 1 is not limited to the values shown in Table 1, and higher rates can be optimized by the processing configuration, beam current, beam. Impact energy and EHD etching solution, etc. are expected to be obtained by 5. For cleaning of the wafer surface, the electrostatic stress between the capillary tip and the extraction plate is applied by a voltage source in a preferred range of about 10 to 20 kV. However, it should be understood that the applied voltage outside the above range can also be used without departing from the spirit and purpose of the present invention. In the embodiment illustrated in Figures 3b, the device 1A includes a neutralizer 135 for preventing the wafer edges 145 and 146 and the bevel 147 from being electrostatically charged, which reduces the energy of the impact particles. One common technique for neutralizing beams is to use a thermionic 4 〇 or hot filament technique (see Figure 沘 and 沘). However, the filament 4 4 tends to be fragile (so it must be specially treated). They also have a life limit due to burnout and become a potential source of contamination due to filament evaporation. Neutralization can also be achieved using microchannel plate technology, which provides a uniform south density electron flow that is well suited for neutralization of targets or substrates. For example, an electron generator array (EGA) 135 can create an electron beam at a lower than lmw input to prevent wafer charge accumulation. In one commercial form, the EGA system alone can provide an electron beam of -1 〇μΑ using only 〇.〇2w. In the case of a "cold" electron source, the EGA will be fused into a mechanically rigid structure using millions of microporous slabs. When a voltage (e.g., up to several kv) is applied to the input of the EGA, i.e., by the thickness of the EGA, which is typically about 1 mm, each microhole produces an electron beam. The EGA does not have to be hot, 200917349 If there are few, and will tend to avoid burning, it will run out of filament. As will be appreciated by those skilled in the art, the EGA operates on the basis of the field emission principle by generating electrons at the input of the EGA. Since the initial eruption of the electrons will move down to the micro-holes of shai EGA, the shots can be multiplied by the principle of microchannel plate operation. 4a and 4b illustrate another embodiment of a capillary emitter interface device 200 having a plurality of (e.g., at least three) capillary emitters, each having a tapered end 240 provided with a microporous, preferably a circular shape. The opening has a diameter in the range of 1 to ΙΟΟμιη. A 10 capillary nozzle tip 240 having a micropore of about 5 〇 μηι has been shown to work satisfactorily, especially when a gas is delivered by the conductive emitter 230 (or "capillary") for ionization. In this case, referring to Figure 4a, the conductive emitters are electrically coupled to a high positive voltage source 217. A gas (e.g., argon) to be ionized at the end 240 of the capillary is fed from a gas inlet 200 through a gas passage 231 disposed in the manifold 225 until it reaches the capillary end 240. until. The gas to be ionized is fed through it at a predetermined pressure. In operation, a plasma is formed within the nozzle tip 240 due to atoms in the gas to be ionized colliding with electrons released from the capillary wall (and/or from within the plasma itself). Ions that reach the pores of the nozzle are accelerated outward by a strong divergent electric field between the end 240 and the wafer 155. An ion beam 265, which is formed primarily of a single charged ion, will impact the contaminated edge regions 丨45 and 146 on the top and bottom surfaces of the wafer 155 and be sputtered to etch away contaminating material therefrom. The illustrated embodiment of the device 2 has capillary emitters 230a and 230b, etc., configured to be approximately 40 with a vertical line of 19 200917349. To 60. The angle impacts the wafer edges 145 and 146. However, a third capillary emitter (7) is configured to strike a ramp 147 at a substantially vertical angle of incidence, but the angle may also be about 40 with its perpendicular. To 60. angle. Any of these capillary emitters, and in particular the fifth emitter 122c, can be mounted on a movable platform or the like such that the angle of incidence can be varied during operation for cleaning the bevel having a curved cross section. Those skilled in the art will appreciate that the wafer 155 can be mounted on one of a plurality of wafer chucks 140 and moved by a pivot mechanism 15 in a circular motion such that the edges 145 and 146 And the slope 147 passes under the ion beam 265. 1〇 Capillary tips or emitters made of metallized conductors provide excellent performance, but a ceramic or quartz nozzle tip with an electrode wire extending through the hole to the end can also operate satisfactorily. The device 200 also includes a neutralizer 235 for preventing the wafer edges 145 and 146 and the ramp 147 from being charged, which can result in reduced energy for impacting particles. 15 Although the embodiment of Figure 4a has been described above with a gas as the source component to cause the ion beam, it should be understood by those skilled in the art that the device can also use a liquid as a source component to cause the EHD beam. . Moreover, the capillary emitter device can also be used to inject a liquid by a non-conductive emitter, as shown in Figure 4b, wherein two emitters are configured to generate a beam of 20 impacts in the edge region 145. And a 146, and a third emitter configured to produce a beam impingement on the beveled region 147. An electrode 215 powered by power source 217 is provided to charge the liquid in the sump 210. 5a and 5b illustrate an embodiment of a capillary emitter system 3〇〇 that is provided with a plurality of capillary emitter manifolds 320 (eg, 2, 3, 4, or 20 200917349) constructed The circumferences of the wafer 155 are arranged substantially equidistant from each other. Each manifold 320 contains two or more deposition heads 342 (which are electrically conductive in Figure 5a and non-conductive in Figure 5b) that can be processed using the aforementioned head configuration of Figure 3 or Figure 4 Wafer edges 145 and 146 and bevel 147. A skilled person will learn that more manifolds can be added to meet the required output requirements. - Neutralizer device 325 is also included to provide an electron source to prevent charge accumulation on wafer edges 145 and 146 and/or ramp 147. In the embodiment of Figure 5a, the conductive emitter 342 is powered by a power source 317. Gas or liquid is fed from the sump 310 to each of the emitters 342. In the embodiment of Figure 5b, the liquid system is fed by a sump 310 which is charged by an electrode 315 powered by a power source 317. To be optimally cleaned, the chuck rotates the wafer in a manner such that the entire edge region of one side of the wafer passes under all of the emitters facing the face of the wafer. However, if time or other factors are limited, the "Hybrid disk rotates the wafer in a manner such that any portion of an edge region on the face of the wafer passes through only one emitter Or a limited predetermined number of emitters underneath. Other patterns and modes of rotation are also possible, as will be appreciated by those skilled in the art. Any of the foregoing embodiments of the present invention may also be adapted to clean fine structures or formations in the edge or bevel of the wafer, such as a straight edge 123 or formed to serve as a wafer reference and orientation. Groove 120 (see lag J). - or a plurality of capillary emitters can be movably oriented as needed to handle and clean in or around the flat edges or grooves. According to another feature of the invention, a method is provided for processing a high energy coffee or ED beam, including agglomerates, fine droplets, and ions, of a restricted and well-directed highly charged particle using - 21 200917349 The edge, groove, and bevel area of a wafer or disc. Aggregation and fine droplets, etc., are produced by a liquid seed stream passing through a conductive or non-conductive capillary nozzle or emitter. The EHD beam is applied when a voltage is applied to a conductive nozzle or the liquid itself. The day is urging. The liquid solution may be composed of a single component organic or inorganic liquid or a mixture of different chemically different components. Examples of electrospraying liquids include, but are not limited to, water, alcohols (methanol, 2-propanol (IPA), alcohols) glycerol hydroxylamine, ethylene glycol, formamide, n-methyl ketone (NMp) 1, 〇 emulsified hydrogen, TMAH, nitric acid, hydrochloric acid, phosphoric acid, sulfuric acid, hydrofluoric acid and ammonium cerium oxide. Those skilled in the art will appreciate that many of the above-described chemicals can be prepared in combination in a number of ways to produce a mixture of spectacles. The plasma, on the other hand, causes a gas or vapor species to flow through a conductive capillary nozzle (including the use of an electrode lead to conduct it), the pore diameter of which 15 is about 50^m or less, And was produced. The initiation of the ion ED beam occurs instantaneously when a voltage is applied to the metal nozzle (the operation is 5W and the device configuration is described. "Capillaritron: A new, versatile ion source'', Appl. Phys. Lett. 38, 320, 1981, and U.S. Patent No. 4,318,028 to Perel et al.. The ion source can be produced from any gas species (e.g., argon, 20 Torr, nitrogen, oxygen, helium, and hydrogen) including reactive gases and molecular complexes. The ion beam is a function of the nozzle (acceleration) voltage, the angle of incidence, the gas species used, and the properties of the etched material. For a majority of the wafer film, a maximum etching is preferred. The angle of incidence of the ion beam is between about 40° and 60° from the line of 200920091. The well-known rate of a 500V rat ion beam for more than 500 different materials is about 400 nm/min (see Commonwealth sciemific c〇rp〇rad〇n.
Bulletin #137-78)。該等蝕刻速率可藉增加離子能量而被實 5質地增加，且應在裝置構造和起弧考量所賦予的限制下儘 可能地提高。雖該毛細管離子源的離子化效率係相對較 小，約有5〜1G%的輸人氣體會離子化，但該未離子化的高 速氣體噴流係為可用以去除濺散之碎屬的清除氣體之一穩 當的來源。 、丄呢％ 〇麥照本發明目前較佳的實施例來呈現。精 1於本發明所屬之領域和技術的卫作者將會瞭解，所述結 構的修正和變化亦可能被實施Μ實質超出本發明的原 範H實謝__«可依需要被 使用於另一實施例中。 15 20 因此，以上說明不應被認為僅及於所描述及被示於所 利範圍，其^ 為能相符並支持以下申請專 、八有匕們之隶完整且公平的範圍。 【阐式簡單說明】 第1a圖係為—晶圓的頂視圖。 第1b圖為第13圖中之晶圓沿A-A線的截面圖。 第2a圖為_具有一導電性 施例的側視圖。 《射-之毛，，”發射器頭實 第2b圖為—具有—料紐發射器之毛細管 實施例的側視圖。 X射态頭 23 200917349 第3 a圖為一併設多個導電性毛細管發射器頭之毛細管 發射器裝置實施例的側視圖。 第3 b圖為一併設多個非導電性毛細管發射器頭之毛細 管發射器裝置實施例的側視圖。 5 第4a圖為另一併設多個導電性毛細管發射器頭之毛細 管發射器裝置實施例的側視圖。 第4 b圖為另一併設多個非導電性毛細管發射器頭之毛 細管發射器裝置實施例的側視圖。 第5 a圖為一併設多個導電性毛細管發射器歧管之毛細 10 管發射器系統實施例的頂視圖。 第5 b圖為一併設多個非導電性毛細管發射器歧管之毛 細管發射器系統實施例的頂視圖。 【主要元件符號說明】 10，11，120…毛細管發射器頭 15.. .充電電極 16…液體 17，19...供電器 18，110."貯槽 20.. .流體導道 30.. .抽取電極 32，160，230...毛細管發射器 33.. .毛細管末端 34.. .射束 37.. .靜電場區 40.. .熱離子 44.. .燈絲 46.. .燈絲供電器 48.. .偏壓供電器 100，200…毛細管發射器裝置 112，113…線路 115，215...浸入電極 116，117，217，317...供電源 120.. .凹槽 123.. .平直邊緣 125.. .覆罩 24 200917349 130.. .抽取電極 155...晶圓 134.. .射束 231.··氣體流道 135...頂面；管線; 中和器 235，335...中和器 136…底面 240…末端 140...卡盤 265...離子束 145，146···邊緣 300...毛細管發射器系統 147...斜面 320...毛細管發射器歧管 150...轉轴機構 342...沈積頭 25Bulletin #137-78). These etch rates can be qualitatively increased by increasing the ion energy and should be as much as possible under the constraints imposed by device construction and arcing considerations. Although the ionization efficiency of the capillary ion source is relatively small, about 5 to 1 G% of the input gas is ionized, but the unionized high-speed gas jet is used to remove the spattered scavenging gas. A stable source. , 丄%% of the present invention is presented in the presently preferred embodiment of the invention. It will be appreciated by those skilled in the art and technology to which the present invention pertains that modifications and variations of the structure may also be implemented, substantially beyond the scope of the invention, and may be used in another In the examples. 15 20 Therefore, the above description should not be construed as being limited to the scope of the invention and the scope of the application and the scope of the following application. [Description of Simple Description] Figure 1a is a top view of the wafer. Figure 1b is a cross-sectional view of the wafer in Figure 13 taken along line A-A. Figure 2a is a side view of a conductive embodiment. Figure 2b is a side view of a capillary embodiment with a material emitter. X-ray head 23 200917349 Figure 3a shows a plurality of conductive capillary emitters A side view of an embodiment of a capillary emitter device of the device head. Figure 3b is a side view of an embodiment of a capillary emitter device with a plurality of non-conductive capillary emitter heads. 5 Figure 4a shows another set of multiple Side view of an embodiment of a capillary emitter device for a conductive capillary emitter head. Figure 4b is a side view of another embodiment of a capillary emitter device with a plurality of non-conductive capillary emitter heads. Figure 5a is a A top view of an embodiment of a capillary 10 tube emitter system with a plurality of conductive capillary emitter manifolds. Figure 5b is a top view of an embodiment of a capillary emitter system with a plurality of non-conductive capillary emitter manifolds [Main component symbol description] 10,11,120...capillary emitter head 15..charge electrode 16...liquid 17,19...power supply 18,110."storage tank 20... fluid channel 30 .. . extracting electricity 32, 160, 230... capillary emitter 33.. capillary end 34.. beam 37.. electrostatic field 40... thermionic 44.. filament 46.. filament feeder 48. . Bias power supply 100, 200... capillary transmitter device 112, 113... lines 115, 215... immersed in electrodes 116, 117, 217, 317... for power supply 120.. groove 123.. Straight edge 125.. Cover 24 200917349 130.. Extract electrode 155... Wafer 134.. Beam 231.·Gas runner 135...Top surface; Line; Neutralizer 235, 335 Neutralizer 136...bottom 240...end 140...chuck 265...ion beam 145,146··edge 300...capillary emitter system 147...bevel 320...capillary emission Manifold 150...spindle mechanism 342...deposition head 25