TW200916979A - Movable body drive method and movable body drive system, pattern formation method and apparatus, exposure method and apparatus, device manufacturing method, measuring method, and position measurement system - Google Patents

Abstract

By moving a wafer stage (WST) while monitoring an XY position of the wafer stage using an interferometer system, and scanning a Y scale (39Y3, 39Y4) in an X-axis direction and a Y-axis direction using a surface position sensor (72k, 74i, 76j), an XY setting position of the surface position sensor is measured. Based on information of the setting position obtained, by measuring a position coordinate of the wafer stage in a perpendicular direction with respect to an XY plane (movement plane) and a tilt direction, the wafer stage is driven in a stable manner and with high precision.

Description

[Technical Field] The present invention relates to a moving body driving method and a moving body driving system, and a pattern forming method and apparatus, an exposure method and apparatus, a component manufacturing method, a measuring method, and a position The measurement system is, in particular, a moving body driving method and a moving body driving system for driving a moving body substantially along a two-dimensional plane, a pattern forming method using the moving body driving method, and a pattern forming apparatus including the moving body driving system, and utilizing Exposure method of the moving body driving method, exposure apparatus including the moving body driving system, and a method for manufacturing the same using the pattern forming method, and a plurality of sensor reading heads for measuring a surface position measuring system (for A method of measuring position information of the position information of the moving body in a direction orthogonal to the two-dimensional plane, and a position measuring system for measuring position information of the moving body. [Prior Art] In the lithography process for manufacturing electronic components (micro components) such as semiconductor elements (integrated circuits) and liquid crystal display devices, a step-and-repeat projection exposure device (so-called stepper) is mainly used. A step-and-scan type projection exposure apparatus (so-called a scanning stepper (also called a scanner)). However, the surface of the wafer to be exposed, for example, may not be flat due to undulation of the wafer, etc., in particular, a scanning type exposure apparatus such as a scanner, when the reticle pattern is transferred by scanning exposure Printed on the wafer = ', ,, and when the area is shot, the multi-focus position detection system (hereinafter also referred to as "charge") is used to detect the wafer surface set in the plurality of detection points in the exposure area. According to the position information of the optical axis of the projection optical system (focusing on 200916979 2:), according to the detection result, the platform or the stage holding the wafer is controlled to be at the position and tilt, that is, the focus leveling control is performed. In order to expose the wafer surface to the image plane of the projection optical system (into the depth of focus of the image plane | (10)) (see, for example, the specification of U.S. Patent No. 5,448,332). In addition, the 'stepper, scanner, etc.' is accompanied by the miniaturization of the integrated circuit, and the wavelength of the exposure light used is also shortened year by year, and the recording aperture of the projection optical system is gradually increased (large wealth). In this way, we seek to improve the resolution. On the other hand, the short-wavelength of the exposure light and the large reduction of the projection optical system can make the depth of focus extremely narrow, so that there is a fear that the focus of the exposure operation is insufficient. Because of the method of shortening the exposure to the air in the air, the method of using the liquid immersion method has recently attracted attention. (See, for example, International Publication No. 2004/053 955 brochure). However, such an exposure apparatus using a liquid immersion method or an exposure apparatus having a narrow distance (working distance) between the lower end surface of the projection optical system and the wafer is difficult to arrange the above-described multi-point AF in the projection optical system. In addition, the 'exposure device is required to achieve high-precision wafer surface position control' to achieve high-precision exposure. Also, a stepper or scanner is used to hold the exposed substrate (eg, wafer) The position measurement of the platform (platform) is generally carried out using a laser interferometer with high analytical capability, and the optical path length of the beam of the laser interferometer measuring the position of the stage is as high as several hundred „1 „1 or more, accompanied by The miniaturization of the pattern of the high-integration of semiconductor elements is required to control the position of the stage with high precision. Therefore, it has become impossible to ignore the beam light of the laser interferometer on the 200916979. The temperature is in love with 4 Buwu, and the field is caused by the influence of -Jjr and I or the gradient of the dish. The measurement value caused by the shaking is short-term fluctuation. The milk is therefore considered to be used directly and pressed. The sensor system of the position information (surface position information) of ten surface in the optical axis direction is used instead of the interferometer, but such an interferometer system has various error factors different from the interferometer. [Summary of the Invention] According to the present invention The first aspect of the present invention provides a moving body driving method, which systematically drives a moving body along a two-dimensional plane, and is characterized in that it comprises: a driving step for causing the moving body to follow a single _ 仃Moving in a predetermined direction of the one-dimensional plane, and measuring a position of the moving body in a direction orthogonal to the two-dimensional plane in a moving towel of the moving body, using a plurality of sensor reading heads of the position measuring system, And at least one of the sensing body and the at least one sensing benefit reading head for the measurement of the information is parallel to the life information of the 1 A plane in the plane of the one-dimensional plane, and the moving body is driven to at least relative In the oblique direction of the two-dimensional plane, according to the above-mentioned 'T driving the moving body at least obliquely to the oblique direction of the two-dimensional plane', the sensor head is parallel to the two-dimensional plane (moving body movement) The position error (inaccurate from the design value) caused by the position error of the moving body in at least the oblique direction. According to the S 2 aspect of the present invention, a pattern forming method is provided, which is characterized in that a step of loading an object on a moving body movable along a moving surface and a step of driving the moving body using the moving body driving method of the present invention in order to form a pattern on the object. β According to the above, since it is driven by a moving body The method drives the moving body carrying the object with good precision to form a pattern on the object, and can form the pattern on the object with good precision 200916979 degrees. - According to the third aspect of the present invention, a pattern forming step 1 is provided A method for forming a cow U, characterized in that in the pattern forming step, a pattern is formed on a substrate by using the pattern forming method of the present invention. According to a fourth aspect of the present invention, an exposure method is provided by The irradiation of the beam forms a pattern on the object, and is characterized in that the moving body that loads the object is driven by the moving body driving method to enable the energy Moving the beam relative to the object. According to the above, the moving body for loading an object is driven with good precision using the moving body driving method of the present invention so that the energy beam irradiated to the object moves relative to the object. Since & can form a pattern on an object with good precision by scanning exposure. According to a fifth aspect of the present invention, a measuring method is provided, wherein a position measuring system for measuring a position of a moving body in a direction orthogonal to the two-dimensional plane is parallel to the second Position information in the plane of the dimension plane, the measurement position measuring system is a positional error measuring the position of the moving body moving substantially along the two-dimensional T plane in an oblique direction with respect to the two-dimensional plane, wherein the measuring method includes The first read head position measuring step is configured to move the moving body in a second direction in the two-dimensional plane such that the mobile body passes the sensing head corresponding to the sensor reading head of the position measuring system. Detecting a region, and corresponding to the measured value of the ith measuring device, which is separately set from the position measuring system and configured to measure position information of the moving body in the second direction, and corresponding to the measured value The detection signal of the sensor calculates the position of the sensor read head in the first direction 200916979. According to the above, only the moving body is moved in the second direction in the two-dimensional plane, so that the moving body can be obtained by the detection area of the sensor corresponding to the sensor reading head of the position measuring system. The sensor reads the head in the direction of the 】. According to a sixth aspect of the present invention, there is provided a mobile body driving system for: driving a moving body along a two-dimensional plane, wherein: a position and a volume system having a parallel to the two-dimensional a plurality of sensor read heads configured to measure two-dimensional position information of the moving body in a direction orthogonal to the two-dimensional plane; and a driving device for causing the moving body to be parallel to the plane Moving in a predetermined direction of the two-dimensional plane, and using the plurality of sensor read heads of the position measuring system to measure position information of the moving body in a direction orthogonal to the two-dimensional plane during movement of the moving body, according to the Measuring the information and the information used for the information (measuring at least one of the sensor heads in a plane parallel to the plane, driving the moving body to an oblique direction with respect to the two-dimensional plane. According to the above, The moving body is driven at least in an oblique direction with respect to the two-dimensional plane to eliminate positional errors (internal design values) caused by the sensor head being parallel to the plane of the two-dimensional plane (moving surface of the moving body) According to a seventh aspect of the present invention, there is provided a pattern forming apparatus that prepares and mounts an object and holds the moving body of the object moving along the moving surface; and drives The moving body is a moving body driving system of the present invention in which the object is patterned. According to the above description, since the moving body holding the object is driven with good precision by the moving body driving system, the object can be patterned to have good precision. According to an eighth aspect of the present invention, an exposure apparatus is provided for forming a pattern on an object by irradiation of a bundle of beams, comprising: a patterning device for irradiating the object with the energy beam; And the moving body drive system of the present invention; the moving body loaded with the object is driven by the mobile body drive system to move the energy beam relative to the object. According to the above, the mobile body drive system of the present invention is used. Accuracy drives the moving body of the loaded object so that the energy beam that illuminates the object moves relative to the object. Therefore, it can be scanned by The exposure forms a pattern on the object with good precision. According to a ninth aspect of the present invention, there is provided a position measuring system which is a position measuring system for measuring a moving body substantially moving along a two-dimensional plane, characterized in that: The sensor read head is disposed at a complex position opposite to the two-dimensional plane, opposite to the moving body substantially moving along the two-dimensional plane, and generating the moving body in a direction orthogonal to the two-dimensional plane An output mapped by the position; using an output from at least one of the plurality of sensor read heads, and information relating to a set position of the at least one sensor read head on a surface substantially parallel to the two-dimensional plane, Detecting at least the tilt information of the moving body with respect to the two-dimensional plane. According to the above, the information about the position of the sensor head on the surface substantially parallel to the two-dimensional plane (the moving surface of the moving body) can be obtained. The movement caused by the error in the position of the sensor read head (error from the design value) 200916979

At least the tilt & μ t L of the body, the difference is calculated, and by subtracting the tilt error, the tilt information of the relatively at least two-dimensional plane of the moving body can be obtained with good precision. [Embodiment] An embodiment of the present invention will be described with reference to Figs. 1 to 26 . Fig. 1 is a view schematically showing the configuration of an exposure apparatus 1A according to an embodiment. The exposure apparatus 1 ΠΛ ^ ^ is a step-and-scan type projection exposure apparatus, that is, a so-called 1 drawing machine. As described later, in the present embodiment, a projection optical system is provided, and in the following description, the projection is performed. The optical axis ΑΧ parallel direction X of the optical system PL is the Ζ-axis direction, and the direction in which the reticle is scanned in the plane orthogonal to the ζ-axis direction is the γ-axis direction, and the ζ axis and Υ are The positive direction of the axis sighs in the X-axis direction, and the directions of rotation (tilting) around the χ axis, the 丫 axis, and the ζ axis are set to 0 χ, θ γ, and θ ζ directions, respectively. The exposure apparatus 100 includes: an illumination system 1A; a reticle stage RST, and a reticle R that is illuminated by the exposure illumination light (hereinafter referred to as illumination light or light) IL of the illuminating system i 0; The projection unit 1>1 includes a projection optical system PL for projecting illumination light IL emitted from the reticle R onto the wafer hip; the stage device 50 has a wafer stage WST and a measurement stage mst;乂 and the control system of the above device, and the like. A wafer W is loaded on the wafer stage wst. The D illumination system is disclosed in, for example, U.S. Patent Application Publication No. 2003/0025890, the entire disclosure of which is incorporated herein by reference in its entirety in its entirety, in its entirety, in its entirety, in its entirety, in its entirety, in its entirety, in its entirety in Illumination optical system. The illumination system 10 is illuminated by illumination light (exposure light) Hj to illuminate the slit-shaped illumination area on the line R of the stenciled curtain (mask system) specified by the reticle curtain (mask system) with substantially uniform illuminance. iAR. Here, as an example, excimer laser light (wavelength 193 coffee) is used as the illumination light. Further, as the ejector, for example, a fly-eye lens, a rod integrator (inner reflection dust integrator) or a diffractive optical element can be used. On the reticle stage (4), for example, a reticle is fixed by vacuum suction, and a circuit pattern finder wafer RST is formed on the pattern surface (below the FIG. 1), and can be marked by a line including, for example, a linear motor. The wafer stage drive system u (not shown, see FIG. 6) is mounted on the plane = amplitude drive and can be driven at a predetermined scanning speed in the predetermined woman's drawing direction (the γ in the left and right direction of the figure in FIG. 1) Axis direction). The position information of the eight-line line-loaded table coffee in the χ γ plane (moving surface) (package 3 Ζ direction position (rotation) information) 'by the reticle laser interferometer (two Α Α 标 标 标The interferometer ") "6' transmits through the moving mirror 15 (actually, the X has eight gamma moving mirrors (or retroreflectors) with the reflecting surface of the γ-axis positive parent, and has a reflection orthogonal to the X-axis The χ moving mirror of the surface is detected at any time, for example, with an analysis capability of about 25 nm. The measured value of the reticle interferometer "6 is transmitted to the main control unit 2 (not shown in Fig. i, see Fig. 6), and the main control unit 20 calculates the measured value based on the reticle interferometer 116. The line = the position of the stage RST in the X-axis direction and the γ-axis direction; and the position (and speed) of the reticle stage stage RST of the reticle stage driving system (1) is controlled based on the calculation result. Further, the end surface of the reticle stage RST may be mirror-finished to form a reflecting surface (corresponding to the reflecting surface of the moving mirror 15) instead of the moving mirror 15. Moreover, the reticle interferometer 116 can also measure the position information of at least 12 200916979 directions of the reticle stage RST^ axis... and the direction. The projection unit pu is disposed below the map of the reticle stage RST. The prior art PU ‘includes: a lens barrel 40; and a projection optical system pL having a plurality of optical elements held in the lens barrel 40 in a predetermined positional relationship. As the projection optical system PL, for example, a refractive optical system composed of a plurality of lenses (lens elements) arranged along an optical axis AX parallel to the z-axis direction is used. The projection optical system PL is, for example, telecentric on both sides and has a predetermined projection magnification (for example, 1/4 times, 1/5 times, or 1/8 times, etc., thereby illuminating the illumination with illumination from the illumination unit) In the area iar, the illumination light IL of the reticle R that is substantially aligned with the first surface (object surface) of the projection optical system PL and the pattern surface thereof is used to make the reticle of the illuminating area IAR The pattern reduction image (one portion of the circuit pattern is reduced) is formed in a region (hereinafter also referred to as an exposure region) IA through the projection light to the system PL (projection unit pu); the region IA is disposed on the second surface (image surface) The illumination area IAR on the wafer W coated with a photoresist (photosensitive agent) is conjugated. Then, the reticle stage RST is driven synchronously with the wafer stage WST to make the reticle relative to the illumination area. IAR (illumination light IL) moves in the scanning direction (γ-axis direction) and moves the wafer w relative to the exposure area ΙΑ (illumination light IL) in the scanning direction (Y-axis direction), thereby illuminating one of the wafers w Scanning exposure of the area (zoning area) to mark the line The image is transferred to the irradiation region. That is, in the embodiment, the pattern is generated on the wafer w by the illumination system 1 标, the reticle R and the projection optical system PL, and the crystal is illuminated by the illumination light il The exposure of the photosensitive layer (photoresist layer) on the circle W is formed on the wafer w. 13 200916979 Further, although not shown, the projection unit ?1 is supported by the two pillars through the vibration-proof mechanism. The lens barrel holder is not limited thereto. For example, as disclosed in the pamphlet of International Publication No. 2G()6/()38952, the projection unit pu is suspended and supported by a main unit (not shown) disposed above the projection unit pu. Frame = piece, or hanging support on the base member of the reticle stage RST, etc. f

Further, in the exposure apparatus 1GG of the present embodiment, since the exposure by the liquid immersion method is performed, the numerical aperture of the projection optical system and the system PL is qualitatively increased to increase the opening on the reticle side. . Therefore, for the Petzval condition and the enlargement of the projection optical system, a catadioptric system including a mirror and a lens can be used as the projection optical system. Further, a photosensitive layer (photoresist layer) may be formed not only on the wafer w but also as a protective film (upper coating film) for protecting the wafer or the photosensitive layer. Further, in the exposure apparatus 100 of the present embodiment, since exposure by a liquid immersion method is performed, a nozzle unit 32 constituting a part of the partial liquid immersion apparatus 8 is provided to surround the lens for holding the lens (hereinafter also referred to as "front lens"). Around the lower end of the lens barrel 40, the lens constitutes the optical element on the most image side (wafer W side) of the projection optical system. In the present embodiment, the nozzle unit 32 is as shown in FIG. The end surface and the lower end surface of the front end lens 191 are set to be substantially flush with each other. Further, the nozzle unit 32 is provided with a supply port and a recovery port of the liquid, and is disposed opposite to the wafer W and provided with a recovery port, and respectively The liquid supply pipe 3 1A and the liquid recovery pipe 3 1B are connected to the supply flow path and the recovery flow path. The liquid supply pipe 3 1A and the liquid recovery pipe 3 1B, as shown in FIG. 3, are viewed in a plan view (viewed from above). The axial direction and the γ-axis direction are inclined by 45. With respect to the center of the projection unit Pu (light of the projection optical system pL 14 200916979, in the present embodiment, a line parallel to the Y-axis direction is recognized in the center of the exposure area ( Reference axis) The LV is arranged symmetrically. The liquid supply pipe 31A is connected to the other end of the unillustrated supply pipe which is connected to the liquid supply device 5 (not shown in Fig. 1 and see Fig. 6). In the liquid recovery pipe 31Β, a basin-α*I*^ is connected, and the gossip is connected to the other end of the recovery pipe (not shown) of the liquid recovery device 6 (not shown in Fig. i, see Fig. 6). The supply device 5' includes a tank for supplying a liquid, a pressure pump, a temperature control device, and a valve for controlling the supply and stop of the liquid to the liquid supply pipe 3A. The valve is preferably (four), for example, not only liquid The flow rate control valve that adjusts the flow rate by supplying and stopping. The temperature control device adjusts the temperature of the liquid in the tank to the same extent as the temperature in the processing chamber (not shown) in which the exposure device is housed, for example. The exposure device 1 such as a tank, a pressurizing system, a temperature control device, a valve, etc. need not be provided at all, and at least a part thereof may be replaced by a device in a factory in which the exposure device 100 is provided. The liquid recovery device 6 includes a tank for recovering liquid and The pump and the valve for controlling the recovery and stop of the liquid through the liquid recovery pipe 31B, etc. The valve preferably uses the same flow control valve as the valve of the liquid supply device 5. Further, the tank, the suction pump, the valve, etc., the exposure device 1〇〇 It is not necessary to have all of it's at least part of it can be replaced by equipment in the factory equipped with an exposure device. This is only used as the above liquid Lq, which can be used to make ArF excimer. Pure water transmitted by laser light (light of 193 nm wavelength) (hereinafter referred to as "water" unless otherwise necessary). Pure water can be easily obtained in large quantities in semiconductor manufacturing plants and on the wafer and on the wafer. No adverse effects such as lenses 15 Advantages of 200916979. The refractive index η of water versus excimer laser light is approximately K44. In this water, the wavelength of the illumination light 1L is shortened to 193 jobs 1 / „ = about 134nn ^ The liquid f supply device 5 and the liquid recovery device 6 respectively have controllers, and each control is controlled by the main control room I丨 5^ 〇四 (4) Controlled by 2〇 (refer to Figure 6). (4) The supplied controller 'opens the valve connected to the liquid supply pipe 31Α through the liquid supply pipe 3 according to the instruction from the main control device 20 1A, supply flow path, and batch /, liquid (water) should be supplied between the front end lens 191 and the wafer W. Further, αΑ at this time, the controller of the liquid recovery device 6 is based on the main control unit Λ 裒 裒 之 之 之 之 之 之 之 之 之 之 20 20 20 20 20 20 20 20 20 20 20 20 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接(water) is recovered to the inside of the liquid recovery unit I 6 (liquid tank). At this time, the main control unit 2 发出 sends a command to the controller of the liquid supply unit 5 and the controller of the liquid recovery unit 6 to supply the The amount of water between the front lens 191 and the wafer w is constant with respect to the amount of water recovered Therefore, the liquid (water) Lq between the tip lens 191 and the wafer w (refer to ® υ is kept constant. At this time, the liquid (water) Lq held between the front lens ΐ9ι and the wafer W is replaced at any time. As apparent from the above description, the partial liquid immersion apparatus 8' of the present embodiment includes the nozzle unit 32, the liquid supply device 5, the liquid recovery device 6, the liquid supply pipe 31A, the liquid recovery pipe 31B, and the like. A portion of the device 8, for example at least the mouth unit 32, may also be suspended from a main frame for holding the technical unit PU (including the aforementioned lens holder) or a frame member different from the main frame. When the projection unit of the 200916979 is suspended as described above, the projection unit 卩卩 can be suspended and supported integrally with the nozzle unit u. However, in the present embodiment, the nozzle unit 32 is disposed and projected. The unit PU independently suspends the support measurement frame. In this case, the projection unit PU may not be hanged. Also, even if the measurement stage MST is located below the projection unit PU, the water is filled in the same manner as described above. Measurement Between the stage and the front end lens ii. In the above description, as an example, each of the liquid supply officer (mouth) and the liquid recovery pipe (mouth) are provided, but it is not limited thereto, as long as the consideration and surrounding members are considered. In the case of the configuration, it is also possible to adopt a configuration having a plurality of nozzles as disclosed in, for example, International Publication No. 99/49504. In other words, as long as at least liquid can be supplied to the most suitable projection optical system PL. The configuration between the lower end optical member (front end lens) 191 and the wafer evaluation may be any. For example, the exposure apparatus of the present embodiment can also be applied to the International Publication No. 2/4/〇53955. The booklet, the liquid immersion mechanism or the liquid immersion mechanism of the European Patent Application Publication No. 142〇298. Referring back to FIG. 1 'the stage device 50 includes a wafer stage WST and a measurement stage mst disposed above the base 12, and a measurement system 200 (see FIG. 6) for measuring the position of the stages WST and MST, and The stage drive system 124 (see FIG. 6) that drives the stages WST and MST. The measuring system 200' includes an interferometer system 118, an encoder system 150, and a surface position measuring system 丨8〇, as shown in Fig. 6. Further, the interferometer system 丨丨8 and the encoder system 150 and the like are left to be described later. 17 200916979 Returning to Fig. 1, a non-contact bearing (not shown) such as a vacuum preload type aerostatic bearing (hereinafter referred to as "air cushion" is provided at a plurality of the bottom surfaces of the wafer stage WST and the measurement stage MST. The static pressure of the pressurized air ejected from the air cushion to the base 12 from the air cushion causes the wafer stage wst and the measurement stage MST to pass through a gap of several degrees above the non-contact seat 12. Further, the two stages WST, MST can be independently driven in the χγ plane by the stage drive system 124 (refer to s 6) including the motor: motor, etc. f From the wafer table WTB on the stage body for a long time. The WTB and the stage body 91 can be driven in a six-degree-of-freedom direction (χ x, 0y, 0z) with respect to the base 12 by a drive system including a linear motor and a Z leveling mechanism (including, for example, a voice coil motor). On the wafer table WTB, but on the death of the gentleman, there is also a vacuum holder to protect the wafer holder (not shown).

For f, the shi retainer can be formed integrally with the wafer table (four), but this embodiment is formed by the Φ S-face buckle # / 风贝他, the wafer holder and the wafer table w, by, for example, vacuum Suction / knife in the recess of the WTB. Also, the /: a® holder is fixed to the wafer table W port 又β, on the wafer table WTB upper panel) 28, the plate body has the armored ##日η surface slanted plate body (the liquid is loaded on the crystal The crystal on the round holder® = the same surface height, the surface of the Japanese yen W is larger than the night body Lq, and the shape (contour) is a rectangular surface (the liquid crystal (crystal) Round loading area) The central portion of the large 1 is formed with a circular opening that is larger than the wafer holding A). The material of thermal expansion rate, Example 28, is composed of low as '(trade name))' or ceramics (such as 2 or 3 of Shoude), and its surface is, for example, 18 200916979 = resin material, poly four A liquid-repellent film is formed by a fluorine-based resin material such as vinyl fluoride (Teflon (registered trademark)), a propylene (four) resin material, or an 11-type resin material. Further, as shown in the top view of the wafer table WTB (wafer stage) of FIG. 4 (4), the plate body 28 has a first liquid-repellent region 28a for surrounding the circular opening shape (the corridor) as a moment, and The rectangular frame-shaped (annular) second liquid-repellent region m disposed around the (10) liquid region 28a. silk! For example, when the exposure operation is performed, at least a portion of the liquid immersion area 14 (see, for example, FIG. 13) that is beyond the surface of the wafer is formed, and the second liquid-repellent area is retracted, and the code H is described later. The ruler. In addition, at least a portion of the surface of the plate body may not be the same height as the surface of the wafer, that is, it may be at a different height. Further, although the plate body 28 may be a single plate body, in the present embodiment, the plurality of plate bodies 'for example, the i-th and second liquid-repellent plates respectively corresponding to the 帛i and the second liquid-repellent regions 28a and 28b are combined. Come to form. In the present embodiment, since water is used as the liquid Lq as described above, the third and second liquid-repellent regions 28a, 28b are also referred to as the i-th and second water-repellent plates 28a, respectively. In this case, the exposure light IL is hardly irradiated to the outer second water-repellent plate 28b so that the exposure light IL is irradiated to the inner i-side water-repellent plate 28a. In view of this point, in the present embodiment, the water-repellent coating of the third water-repellent board 28 & surface-opening is sufficiently thin to have sufficient resistance to the exposure light IL (in this case, the light in the vacuum ultraviolet region). The second water-repellent area of the membrane is formed on the surface of the second water-repellent board 28b, and the water-repellent coating film having a water-repellent resistance to the exposure light is further different from that of the first water-repellent area. In general, it is not easy to apply a water-repellent coating film which is sufficiently resistant to the exposure light IL (in this case, the light in the vacuum ultraviolet region), so that the first water-repellent 200916979 board is as described above. It is more effective to separate 28a from the surrounding second water deflector 28b into two parts. Further, the present invention is not limited to this. It is also possible to apply two water-repellent coating films having different financial properties to the upper surface of the same plate to form the first water-repellent region and the second water-repellent region. Further, the types of water-repellent coating films in the third and second water-removing areas may be the same. For example, only one water-repellent area can be formed in the same plate body. Further, as is clear from Fig. 4(A), a rectangular notch is formed in the central portion of the + γ side end portion of the i-th water deflector 28& in the X-axis direction, and the notch and the second water-repellent plate are removed. A measuring plate 30 is embedded in the inside of the rectangular space (notch (4)). In the center of the longitudinal direction of the measuring plate 3 (the center of the wafer table MB, the line LLM forms the reference mark FM, and the center of the reference mark (10) is formed on the reference mark F^x axis: the side and the other side. Paired

The private-to-space image measurement slit pattern (the slit-like measurement pattern is similar. Each of the space image measurement slit patterns SL is, for example, an L-shaped narrow pattern having a Y-axis direction and a square B, or respectively Two linear narrow patterns extending in the X-axis and the x-axis direction, etc. Mirror II = ? Dimorph: Nano: 3^ system (including objective lens, reflection ^ 01, η product 36, from the wafer The inside of the WTB penetrating the main body of the carrier body 91 is described by a part of the space. The measurement slit pattern is slaughtered, and the part is embedded in the upper WST. The seam pattern SL is provided with a pair of -. In the interior of the casing 36, the illumination light of the pattern SL (4) L, the word first is transmitted through the spatial image measuring slit dry path, and is directed toward the -Y direction 20 200916979. In addition, the following is for convenience of explanation. The optical system inside the I body 36 is described as a light transmission system using the same reference numerals as the value body 36. Further, on the second water-repellent plate 28b, a plurality of lattice lines are directly formed along the four sides thereof at a predetermined pitch. Further, in detail, on the side of the X-axis direction of the second water-repellent plate 28b and another _ The sides (left and right sides in Fig. 4(a)) are respectively formed with Y scales 39Υ, 39Υ2, γ scales 39γι, 39γ2, for example, f is a lattice line 38 with a longitudinal direction along the x-axis direction at a predetermined pitch. A reflective lattice (for example, a diffraction grating) having a γ-axis direction and a periodic direction formed parallel to the direction of the x-axis (the x-axis direction).

In the same manner, the region on the side of the second water-repellent plate 28b in the Y-axis direction and the other side (the upper and lower sides in FIG. 4(A)) are respectively formed in a state of being sandwiched by the γ scale 391 and π: The ruler 39Χι, 39Χ2, the χ ruler 39Χι, 39χ2, for example, the lattice line 37 whose longitudinal direction is the longitudinal direction is formed at a predetermined pitch along a direction parallel to the X-axis (X-axis direction) with a χ-axis direction as a periodic direction. A reflective lattice (for example, a diffraction grating) is formed. Each of the scales described above is formed as a reflection-type diffracted light on the surface of the second water-repellent plate 28b by a full-image sheet or the like (see Fig. 7). At this time, a grid composed of a narrow slit or a groove is drawn at a predetermined interval (pitch) on each scale as a scale. The type of the diffraction grating used for each of the scales is not limited, and not only a groove or the like can be formed mechanically, but for example, the interference pattern can be sintered to a photosensitive resin. However, each scale is formed, for example, by engraving the scale of the above-described diffraction grating from a thin plate glass at a distance of 13 8 nm to 4 (e.g., from m pitch). These scales are covered by the liquid-repellent film (water-repellent film). In addition, in Fig. 4(A), for the sake of convenience of illustration, the distance between the lattices is shown to be much larger than the actual pitch. This point is the same as that of the other Fig. 21 200916979. In the present embodiment, since the second water-repellent plate 28b itself is formed into a scale, a glass plate having a low thermal expansion is used as the second water-repellent plate 28b. However, the scale member formed of a glass plate or the like having a low thermal expansion of a lattice may be fixed to the wafer table WTB by, for example, a leaf spring (or vacuum suction) to prevent locality. In the case of the expansion and contraction, the water-repellent plate having the same water-repellent coating film may be used as the plate body 28. Alternatively, the wafer table wtb may be formed of a material having a low coefficient of thermal expansion. In this case, a pair of gamma scales and a pair of iridium scales may be directly formed on the wafer table WTB. Further, it is also effective to cover a glass plate having a low thermal expansion coefficient of water repellency (liquid repellency) in order to protect the diffraction grating. Here, a glass plate having a thickness equal to that of the wafer, for example, a thickness of 丨mm, is used, and the surface of the wafer table is placed on the wafer table WTB at the same height as the wafer surface (the same surface height is attached to each scale end) #' is respectively provided with a positioning pattern for determining the relative position between the buyer t and the scale of the encoder t. The positioning pattern is composed of, for example, grid lines having different reflectances, and is encoded when the encoder read head scans on the positioning pattern. The output signal strength of the device changes. Therefore, the threshold value is determined in advance to detect the position where the output signal strength exceeds the threshold value. The relative position between the encoder read head and the scale is set based on the detected position. The -Y end face and the -X end face of the wafer table WTB are mirror-finished to form the reflecting surfaces 17a, 17b for the interferometer system 118 described later in Fig. 2. 22 200916979 Measuring stage MST, including The stage main body 92 driven in the χγ plane and the measuring stage mounted on the stage main body % are not shown by a linear motor, etc. The measurement stage MST can be opposed to the base η by a drive system not shown. At least three degrees of freedom (χ, γ, 0 z). In addition, in Fig. 6, the drive system including the wafer stage WST and the drive system of the measurement stage MST is shown as the stage drive system 124. The MTB (and the stage main body 92) are provided with various members for measurement. As the measuring member, for example, as shown in Fig. 2 and Fig. 5 (4), a pinhole-shaped light receiving portion is used to receive illumination on the image side of the projection optical "pL". The actinic illuminance unevenness sensor 94, which is used to measure the spatial image measurement of the projected image space (projection image) projected by the projection optical system, and the disclosure of, for example, the International Publication No. 〇65428胄 pamphlet. Shake-Hartman (Shack-Hartman) wavefront aberration measuring device%, etc. Wavefront aberration sensor can be used if it can use International Publication No. 99/6〇361 brochure (corresponding to European Patent No. 1, 〇 No. 79,223) i. The illuminance unevenness sensor 94 can be configured, for example, in the same manner as disclosed in the specification of US Pat. No. 465,368, etc. Further, the space image measuring device 96' can be used, for example, with a US patent. Apply for the open daring / Wei π = Mingshu Further, in the present embodiment, although the measuring members (94, 96, 98) are provided on the measuring stage MST, the type of the measuring member, ^ / / i θ ΛΑ or number 4 is not limited thereto. The measuring member, for example, can measure the transmittance of the transmittance of the projection optical system, and/or can be used to observe the aforementioned partial liquid immersion device 8' such as the mouth unit 32. (or the front lens 191), etc., etc. Further, a member different from the member for measuring 23 200916979, for example, for cleaning the mouth iu 咕月糸嘴兀32, the front lens

A dedicated cleaning member or the like is mounted on the measurement stage MST. In the present embodiment, it is known that the sensing frequency is high, the illuminance unevenness sensor 94 or the spatial image measuring device 96 is known. Etc., on the center line of the measurement stage MST (through the gamma axis of the center). Therefore, in the implementation, the measurement using these types of sensors is not intended to measure r'

The movement of the stage MST in the X-axis direction is performed only by moving it in the Y-axis direction. In addition to the sensor described above, for example, the illuminance monitor disclosed in the description of the U.S. Patent Application Publication No. 2002, et al., et al., et al., the illuminating portion of the projection optical system PL, which receives a predetermined area of the illumination light river, can be used. Preferably, the illuminance monitor is also disposed on the center line. Further, in the present embodiment, the exposure light (illumination light) 1 through which the projection optical system PL and the liquid (water) Lq are transmitted is exposed to the liquid immersion exposure of the wafer w, and the illumination light IL is used. The above-described illuminance unevenness sensor 94 (and illuminance monitor), the spatial image measuring device 96, and the wavefront aberration sensor 98 used for the measurement, that is, the illumination light IL is received through the projection optical system pL and water. . Further, each of the sensors may be partially mounted on the measurement stage MTB (and the stage body 92), for example, only one of the optical systems, or the entire sensor may be disposed on the measurement stage MTB (and the stage body 92). . Further, reflection surfaces 19a and 19b similar to the wafer table WTB are formed on the +Y end surface and the -X end surface of the measurement table MTB (see Figs. 2 and 5(A)). As shown in Fig. 5(B), a frame-like mounting member 42 is fixed to the -γ side end surface of the stage main body 92 of the measurement stage MST. Further, in the end face of the γ 24 200916979 side of the stage main body 92, a pair of light receiving systems are disposed in the vicinity of the center position in the X-axis direction of the opening of the mounting member 42 so as to be opposite to the pair of light transmitting systems 36. 44. Each of the light receiving systems 44 is constituted by an optical system such as a relay lens, a light receiving element (for example, a photomultiplier tube, etc.), and a housing in which these are housed. 4(B) and FIG. 5(B) and the description so far, in the present embodiment, in the state in which the wafer stage WST and the measurement stage MST are within a predetermined distance from the γ-axis = direction (including contact In the state), the illumination illuminating system transmitted through each of the aerial image measuring slit patterns 8 of the measuring plate 30 is guided by the respective light transmitting systems 36, and the light receiving elements of the respective light receiving systems 44 receive light. That is, by the measuring plate 30, the light-transmitting system 36, and the light-receiving system 44, constituting, for example, 曰本特开2〇〇2_14〇〇5 (in accordance with U.S. Patent Application Publication No. 20〇2/〇〇41377 The phase measuring device 45 (see Fig. 6) disclosed in the specification and the like.

A reference rod (hereinafter simply referred to as "FD rod") composed of a rectangular cross-sectional shape bar member is extended in the z-axis direction on the attachment member 42. The printing rod/ is dynamically supported by the measuring stage MST thermal expansion Π柃46 as the original device (measuring reference) by the full dynamic frame structure, so the material is low, and the glass ceramics, such as the first German company The flatness of the top surface (surface) of the Zerodur (trade name) is set to be high, and is the same as the so-called other. In the longitudinal direction of the mast 46, the lateral direction is the circumference: near the tungsten portion. As shown in Fig. 5(A), reference lattices (e.g., diffraction gratings) 52 are formed in the opening direction of the γ-axis square 52. The pair of reference grids are formed at a predetermined distance from the axis of the FD rod 46. Direction 25 200916979 "is symmetrically spaced apart from the aforementioned centerline CL. r

The two 2 poles are formed with a plurality of knowledge records M in the configuration shown in FIG. The plurality of reference marks M are arranged in two rows at γ ° at the same pitch, and each row is arranged to be in the X-axis direction. For each of the reference marks Μ, for example, a two-dimensional mark which can be detected by a system of the aligning system, the system, and the secondary system described later is used. The shape (configuration) of the reference mark j 相 may be different from the reference mark FM. However, in the present embodiment, the reference mark M has the same configuration as the reference mark FM, and is also configured in the same manner as the alignment mark of the circle W. Further, in the present embodiment, the surface of the FD cup 46 and the surface of the measuring table MTB (which may include the measuring member described above) are each covered with a liquid-repellent film (water-repellent film). The exposure apparatus (10) of the present embodiment is omitted in FIG. 1 in order to avoid the complexity of the drawing. However, as shown in FIG. 3, the second pair of "quasi-system AL1' is used. Au is placed on the aforementioned reference sleeve π from the optical axis of the projection optical system PL to be separated from each other by a line: a detection center is provided. This alignment system is similarly fixed to the underside of the main frame (not shown) through the support structure. One side of the X-axis direction and the other side of the alignment system are respectively provided with a secondary alignment system whose detection center is substantially symmetrical with respect to the δ-Hui line LV, and is called * Alignment system Au, detection of al2i~al24: 'set in the X-axis direction at the different position', that is, 4 in the X-axis direction, as shown in the figure 3. With the secondary alignment system AL2n (n = 1~ AL24-like) is fixed to the front end of the arm 56n (n = 1~4) which can rotate in the rotation of the 26,16,16,979 hour and counterclockwise directions. In the present embodiment, one of the secondary alignment systems AL2n (for example, at least an optical system that emits alignment light to the detection region and guides the light generated by the target mark in the detection region to the light receiving element) The remaining portion of the arm 56n' is fixed to the main frame for holding the projection unit pu. The secondary alignment systems AL2l, AL22, AL23, AL24 can be adjusted by rotating the centroids respectively. That is, 'second alignment system A.】, AL22, AL23, AL24 detection The area (or detection center) can move independently in the X-axis direction. Therefore, the secondary alignment system AL1 and the secondary alignment system ALn AL23, AL24 can adjust the relative position of the detection area in the x-axis direction. In the form, although the secondary alignment system AL2l, ALL AL2s, AL2j χ position is adjusted by the rotation of the arm, but is not limited thereto, the secondary alignment systems AL2l, AL22, AL23, AL24 are reciprocally driven. The driving mechanism in the direction of the x-axis. Further, at least one of the secondary alignment systems AL2i, AL22, and A can also move not only in the direction of the x-axis but also in the direction of 2, and in addition, due to the secondary alignment system One part of AL2n is moved by the arm ^, so the position information fixed to one part of the arm 56n can be measured by a sensor not shown, such as an interferometer or a coded write. This sensor can measure only the second pair. The position information of the quasi-system AL2n in the X-axis direction can also measure the position information of other directions such as the γ-axis direction and/or the rotation direction (including at least one of the 0乂 and ^ y directions). It consists of a differential exhaust type air bearing The vacuum enthalpy 58n (n2b4' is not shown in Fig. 3, see Fig. 6). Further, the arm W, for example, by a rotary drive mechanism including a motor or the like, is called ~~4, and in Fig. 3, 27 200916979 is not shown. Referring to Fig. 6), it can be rotated according to the instruction of the main control unit 2〇. After the rotation of the arm 56n is adjusted, the main control unit 20 operates on each of the vacuum potentials to adsorb and fix the arms 56n to the main frame (not shown). Thereby, the state in which the rotation angles of the respective arm shackles are adjusted, that is, the desired positional relationship of the secondary alignment system AL i and the four primary alignment systems AL2 丨 〜 a; Further, as long as the portion opposed to the arm 56n of the main frame is a magnetic body, an electromagnet may be used instead of the vacuum pad 58. r The primary imaging line Δ τ of the present embodiment is similar to the four secondary systems AL1 and four, and a FIA (Field Image Alignment) system such as a video processing method can be used. The broadband detection beam that does not cause the photoresist on the wafer is irradiated onto the object mark, and is imaged by the photographic element (CCD (electrical device), etc.) by the reflected light from the object mark and imaged on the glossy surface. The object mark image and the indicator (not shown) (set in each alignment system (four) Μ indicator pattern) like 'and output the image signal from the sub-alignment system and four secondary alignment systems AL2i ~ guilty The photographic signal is transmitted through the unillustrated pair 4 to о 6@^ 1 2 "to supply in addition" as the above-mentioned alignment system is not limited to the FIA system, each narrow can also be used alone or in combination Detecting light illuminates the object 2 to detect scattered light or diffracted light generated from the object mark | = = Yes = the object mark produces ... diffracted light (for example, the same =. Also, this embodiment:: the diffracted light in the middle direction) Alignment Sensing of the Detective Implementation of the $Statement, Five Alignment Systemsa Li, although it is fixed by the support member 54 or the arm 56n under the main frame for holding the projection single (4) 28 200916979, 'but not limited to this' can be set, for example, in the aforementioned measurement frame. Second, the description is used to measure the crystal. The configuration of the interferometer system 118 (see Fig. 6) of the circular stage WST and the position information of the measurement stage mst.

Here, before specifying the configuration of the interferometer system, 1 briefly describes the measurement principle of the interferometer. The interferometer irradiates a distance measuring beam (ranging light) toward a reflecting surface provided on the object to be measured. The interferometer receives the combined light of the reflected light and the reference light, and measures the intensity of the interference light that causes the reflected light (ranging light) and the reference light to be aligned in the polarization direction to interfere with each other. Here, the relative phase (phase difference) between the reflected light and the reference light is changed by KAL due to the optical path difference ΔL between the reflected light and the reference light. Therefore, the intensity of the interference light changes in proportion to 1+a·e〇s (KA L). However, if the homodyne detection method is used, the wave number of the distance measuring light and the reference light is the same as K. The fixed number a depends on the ratio of the intensity of the distance measuring light to the reference light. Here, the reflecting surface with respect to the reference light is generally provided on the side of the projection unit PU (and also in the interferometer unit as the case may be). The reference surface of the reference light is the reference position of the distance measurement. As described above, the optical path difference Δ [will reflect the distance from the reference position to the reflection surface. Therefore, by measuring the number of changes in the intensity of the interference light (the number of edges) with respect to the change in the distance from the reflection surface, the displacement of the reflection surface provided on the measurement object can be calculated from the product of the count value and the unit of the measurement. The unit of measurement here is one-half of the wavelength of the distance measuring light when it is a single-pass measuring instrument. When it is a two-way measuring instrument, it is one quarter of the wavelength of the measuring distance light. Further, when an interferometer of a heterodyne detection method is used, the wavenumber κ 1 of the distance measuring light and the wave number K2 of the reference light are slightly different. At this time, the path length of the distance measuring light and 29 200916979 reference light are respectively set to Li, L2, and the phase difference between the distance measuring light and the reference light is given as UL+AKLi, and the intensity of the interference light is compared with i + a· Cos(KAL + △ KL!) changes in proportion. Here, the optical path difference here is approximately ΔL% if the light path length L2 of the reference light is sufficiently short, and the intensity of the interference light changes in proportion to 1 + a#c〇s[(K + Δ K) . From this, it is understood that the intensity of the interference light vibrates at a wavelength of 2 ΤΓ/Κ of the reference light as the optical path difference AL changes, and the envelope of the i-cycle vibration vibrates (wave difference) with a long period of 27 Γ/ΔΚ. Therefore, in the heterodyne detection method, the direction of the change in the optical path difference, that is, the direction in which the object is displaced can be known from the long-period wave difference. In addition, the main error of the 'interferometer' is the effect of the pulse of the environment on the beam path (shaking the air). For example, the wavelength λ of light changes to λ + Δ again due to air shaking. Therefore, the change in the phase difference KAL due to the small change in the wavelength is obtained by the wave number κ = 2? Γ / λ, so that it can be obtained as 2π U / X Λ / λ2. Here, it is assumed that the wavelength of light is again = a slight change Δb nm, and the phase change is 2; rxl00 compared to the optical path UL=1〇〇mm. This phase change corresponds to a displacement of 1 〇〇 of the unit of measurement. As described above, when the optical path length is set to be long, the influence of the air sway generated by the interferometer in a short period of time is large, and the short-term stability is poor. In the above case, it is preferable to use a surface position measuring system having an encoder or a head described later. The interferometer system 118 is shown in Fig. 2 as a position measurement of the gamma interferometer 16 including the wafer stage WST, the χ interferometers 126, 127, 128, and the 干涉 interferometers 43A, 43Β, and the measurement stage Mst. The gamma interferometer 18 and the X interferometer 130 are used. Υ Interferometer and X interferometer 126, 127, 30 200916979 12 8 (X interferometers 126 to 128 in Fig. 1 are not shown, refer to Fig. 2), respectively, the reflection surfaces 17a, 17b of the wafer table WTB are irradiated From the light beam, and by receiving the respective reflected light', the displacement of each reflective surface from the reference position (for example, the fixed mirror is disposed on the side of the projection unit PU, and then the reference surface is used as the reference surface), that is, the wafer stage WST is in the XY plane. The position information within and supplies the measured value to the main control device 20. In the embodiment, as described above, as the above-mentioned interferometers, a plurality of ranging axes are used except for a part.

Multi-axis interferometer. On the other hand, as shown in FIGS. 4(A) and 4(B), a moving mirror having a longitudinal direction in the X-axis direction is attached to the end surface on the -γ side of the stage main body 91 via a dynamic support mechanism (not shown). 41. The moving mirror 41 is composed of a member in which a rectangular parallelepiped member and one of the rectangular parallelepiped surfaces (the surface on the -Y side) are integrated with the triangular columnar member. As is apparent from Fig. 2, the moving mirror 41 is designed such that the length in the X-axis direction is longer than the wafer from the WTB reflecting surface 17a by at least the interval between the two z interferometers described later. The surface on the -Y side of the moving mirror 41 is mirror-finished, and as shown in Fig. 4(b), there are three reflecting faces, 41a, 4le. The reflecting surface 仏 constitutes a portion of the 端面-side end surface of the moving mirror 41, which is parallel to the χζ plane and extends in the ::axis direction. The reflecting surface is formed on the + z side phase (four) plane of the reflecting surface ,, and is formed at an obtuse angle with respect to the reflecting surface 41a and extending in the direction of the other axis. The reflection system is formed to be adjacent to the side of the reflection surface _2 on the side of the side of the reflection surface ,, and is arranged such that the Hane surface 41a and the reflection surface 41b are symmetrical. The movable mirror 41 opposes the moving mirror 41 with the Z interferometers 43A, 43B (see Figs. 1 and 2). 31 200916979 From a comprehensive view Y interferometer 16 1 and Figure 2, z, Z interferometers 43A, 43B,

The fixed mirror 47B of the reflecting surface is directed to the reflecting surface 41c by the light beam B1' (see the distance measuring beam B2. In the present embodiment, the measuring beam B1 having the 丨41c sequentially reflected and orthogonally and having the reflecting surface 41c And the fixed mirror of the reflecting surface orthogonal to the measuring beam B2 reflected by the reflecting surface 41b is separated from the moving mirror 41 by a predetermined distance in the -γ direction, without interfering with the measuring beam B 1, B 2 The state is extended in the X-axis direction. The fixed mirrors 47A, 47B are supported by the same support provided on a frame (not shown) for supporting, for example, the projection unit PU (not shown in FIG. 2 (and As shown in FIG. 13), the gamma interferometer 16 separates the γ-axis direction measuring axis of the same distance from the reference axis LV along the -X side and the +X side, and irradiates the distance measuring beam B4l5 Β42 to the wafer table WTB. The reflecting surface i7a receives the respective reflected light' to thereby detect the γ-axis direction position (γ position) in the irradiation point of the ranging beam Β4ι B42 of the wafer table WTB. Further, only the representative is measured in FIG. The distance beam B4l5 B42 is illustrated as the distance measuring beam B4. Again, the Y interferometer 16 is tied to the distance measuring beam B. 4], B42 is spaced apart from each other in a predetermined interval in the z-axis direction, and the distance measuring axis is projected along the Y-axis direction to the reflecting surface 41a, and then receives the ranging beam B3 reflected by the reflecting surface 41a, thereby detecting The γ position of the reflecting surface 41 a of the moving mirror 41 (that is, the wafer stage WST) 32 200916979 The main control unit 20 is based on the average value of the measured values of the ranging axis corresponding to the distance measuring beam B42 of the Y interferometer 16 Calculate the γ position of the reflecting surface i7a and also the wafer table WTB (wafer stage WST) (more precisely, the shift ΔY in the γ-axis direction). Further, the main control unit 2 is connected to the distance measuring beam B42. The displacement of the wafer stage wst in the rotation direction (0Z direction) around the 1z axis (the amount of deflection) Δ 0 is calculated from the difference between the measured values of the corresponding distance measuring axes. Further, the main clamping device 20 is based on the reflecting surface. 17a and the displacement ΔΥ in the γ-direction of the γ-position of the reflection surface 41 & Δ,), the displacement (pitch amount) Δ 0X of the wafer stage WST in the direction is calculated. Further, as shown in FIGS. 2 and 13 'X The interferometer 126 is biaxially measured at a distance along the straight line (reference axis) LH passing through the X-axis direction of the optical axis of the projection optical system PL. The distance measuring beam Β5ι, B5z is projected on the wafer table WTB. The main control device 20 calculates the position of the wafer stage WST in the axial direction according to the measured value of the distance measuring axis corresponding to the distance measuring beams Β5, B52 ( The X position, more correctly, the shift in the X-axis direction △ χ). Further, the main control t; the device 2 算出 calculates the crystal from the difference X of the measured values of the distance measuring axes corresponding to the distance measuring beams Bh, Eh The displacement of the circular stage WST in the 02 direction (the amount of deflection ζ (Χ). In addition, the Δ 0 zW obtained from the Χ interferometer 126 and the Δ 0 zm obtained from the γ interferometer 16 are equal to each other, representing the wafer stage WST The shift to the θ z direction (the amount of deflection) Δ θ ζ. Further, as shown in FIG. 14 and FIG. 15, etc., the distance measuring beam Β7 is connected from the X interferometer 128 along the unloading position υρ (for wafer unloading on the wafer table wtb) and the loading position LP (for wafer processing) The X-axis parallel straight line LUL on the wafer stage is irradiated onto the reflection surface nb of the wafer table WTB. 33 200916979 Further, as shown in FIGS. 16 and 17 and the like, the distance measuring beam B6 is irradiated from the X interferometer 127 to the wafer stage along a parallel straight line (reference axis) LA passing through the X-axis of the center of the alignment detection system AL1. The reflecting surface 17b of the WTB. The main control unit 20 can also obtain the displacement ΔΧ of the wafer stage WST in the X-axis direction from the measured value of the distance measuring beam B6 of the X interferometer 127 and the measured value of the measuring beam B7 of the X interferometer 128. However, the configuration of the three X-interferometers 126, 127, and 128 is different in the Y-axis direction. Therefore, when the X interferometer 126 is used for performing the exposure shown in FIG. 3, and the X interferometer 27 is used for performing the wafer alignment shown in FIG. 19 and the like, the X interferometer 128 is used to perform the FIG. The wafers shown are loaded and the wafers shown in Figure 14 are unloaded. As shown in Fig. 1, the distance measuring beams B1, B2 along the Y-axis are respectively irradiated from the aforementioned Z interferometers 43A, 43B to the moving mirror 41. These ranging beams B1, B2 are incident on the reflecting surfaces 41b, 4 1 c of the moving mirror 41 at a predetermined incident angle (set to 0 /2), respectively. Further, the distance measuring beam b1 is reflected on the reflecting surface 4丨b, 4丨c in order, and is incident on the reflecting surface of the fixed mirror 47B vertically, and the measuring beam B2 is reflected in the reflecting surface 41c, 41b. And it is incident perpendicularly to the reflecting surface of the fixed mirror 47A. Then, the distance measuring beams B2, B1 reflected by the reflecting surfaces of the fixed mirrors 47A, 47B are again reflected on the reflecting surfaces 41b, 41c, or are again reflected on the reflecting surfaces 41c, 41b (reversely inverted injection). Light path) receives light with z interferometer 4 3 B. Here, when the displacement of the moving mirror 41 (that is, the wafer stage WST) in the z-axis direction is ΔΖο, and the shift in the γ-axis direction is Δγ〇, the optical path length of the distance measuring beams Β1 and Β2 is long. The changes AL1, AL2, respectively, can be expressed by the following formula (1), 34 200916979 (2) 〇A LI =: λ Υοχ(1 + cos 6> ) + Δ Zoxsin^ (1) Δ L2= Δ γοχ(ι + cos θ )-Δ Z〇xsin θ (2) Then, 'based on the equations (1), (2)' ΔΥ〇 and ΑΖο can be obtained by the following equations (3) and (4). ' ...(3) ...(4) △ Ζο= (△ Ll-Δ L2)/2sin0 Δ Y〇= (A L1+ Δ L2)/{2(1 + cos^ )} The above-mentioned shifts ΔΖο, △ Yo are respectively It is obtained by the z interferometers 43A, 43B. Therefore, the displacement obtained by the Z interferometer 43 A is set to Δ z 〇 R, and Δ Y 〇 R ′ is determined by the Z interferometer 43B as Δ z 〇 L, Δ Y 〇 L. Next, the distance at which the distance measuring beams β1, B2 irradiated by the Z interferometers 43A, 43B are separated in the X-axis direction is D (see Fig. 2). Under the above premise, 'the displacement of the moving mirror 41 (that is, the wafer stage WST) in the θζ direction (the amount of deflection) Δ 0ζ, and the shift in the direction (the amount of the yaw) Δ 0y can be obtained by the following formula (5). ), (6) found. Δ 0 tan'^CA YoR-Δ YoL)/D} ".(5) △ 0 y := tan-1 {(△ ZoL-△ ZoR)/D} (6) The main control device 20 can calculate the displacements Δ~, Δ丫 of the crystal in four degrees of freedom by using the measurement results of the above equations (3) to 35, 200916979 = z interferometers 43A, 43B. , ^,... The 纟 control device 20' can determine the wafer stage WST in the direction of the degree of freedom from the measurement results of the interferometer system 118 (Ζ, χ, γ, Δ θ ζ, Δ «9 x, △ In the present embodiment, the wafer stage is described. The wafer stage is composed of a single-stage that can be driven by a degree of freedom. However, instead of the single stage, the following may be used. a wafer carrier #WST including a carrier body 91' movable in the χγ plane and mounted on the stage body 91 capable of being micro-driven relative to the stage body 91 in at least two axial directions, a θχ direction, and Wafer table in the θγ direction, ten, earth. Or 'wafer table WTB can also be used to move the wafer stage with the so-called coarse and micro motion in the direction of the x-axis, the γ-axis direction, and the direction of the stage body 91. However, in this case, the shoulder is the monthly b. The interferometer system 丨丨8 measures the position of the wafer table wtb in the six-degree-of-freedom direction. The measurement is carried from the MST, and the carrier body 91 can also be used. It is composed of three degrees of freedom or six degrees of freedom measurement 〇MTB loaded on the stage body 91. Instead of the reflecting surface 17a, a moving mirror composed of a plane mirror may be provided on the wafer table WTB. However, in the present embodiment, the position of the wafer stage WST (wafer table WTB) in the XY plane is The rotation information including the direction of the ^2 is mainly measured by an encoder system described later, and the measured values of the interferometers 丨6, 丨26, i27 are used to auxiliaryly correct (correct) the measured values of the encoder system for a long period of time. Sexual changes (such as due to deformation of the scale over time, etc.). Further, at least a portion of the interferometer system 1 8 (eg, optical system 36 200916979, etc.) may be provided to hold the main unit of the projection unit pu The frame or the projection unit 1 is provided integrally with the suspension unit as described above. However, the present embodiment is provided in the measurement frame. Further, in the present embodiment, the projection unit p U is fixed. The mirror surface is the reference surface to measure the position information of the wafer stage WST, but the position of the reference plane is not limited to the projection unit PU'. It is not necessary to use the fixed mirror to measure the position information of the wafer stage WST. real In the embodiment, the position information of the wafer stage WST measured by the interferometer system 118 is not used in the exposure operation or the alignment operation described later, and is mainly used in the calibration operation of the encoder system (that is, the correction of the measured value). Etc., for example, the measurement information of the interferometer system 118 (ie, at least one of the six degrees of freedom direction information) can also be used, for example, in an exposure action and/or a motion: etc. 118 is used as the encoder -, - first backup, please refer to this point for details. This embodiment is based on the measurement of the wafer stage WST in the three degrees of freedom direction, axis / axis, and 1 side _ position information Therefore, when performing the ^ action or the like, the measurement information of the interferometer system 118 can only make the fish system to the wafer stage WST, and encode

The axis and the direction of the measurement of the ancient people (X-axis, Y-Ο different directions, such as the position in the direction of β-square, bucket, door and / or ° or position information except the direction of the difference Use and encode the n-series # > , ai θ + i bu, re-axis, ...: position information in the same direction of the summer direction (ie, at least one of the X sleeve, γ = and θζ directions). Also, υ = The position information measured by the interferometer system 118 = in the direction of the exposure axis. Round - Comment 8 Ding at z 37 200916979

In addition, the interferometer system 118 (see Fig. 6) also includes a gamma interferometer 18 for measuring the two-dimensional position coordinates of the MTB, and the interferometer. Y interferometer 18, x interferometer 130 (X interferometer 130 in Fig. 1 is not shown 'refer to Fig. 2) is a pair of reflective surfaces 19a, 19b of the measuring table WTB as shown in Fig. 2 'illuminating the measuring beam' and accepting each The reflected light is used to measure the displacement of each reflecting surface from the reference position. The main control unit 2 receives the Y interferometer 18. The measured value of the X interferometer 1 3〇 calculates the position information of the measurement stage MST (including f

For example, at least the X station; 5 v k 士, 位置 and the position information in the Y-axis direction and the rotation information in the βζ direction). In addition, the same interferometer as the helium interferometer 16 for the wafer stage WST can be used as the interferometer for measuring the stage. Further, it is also possible to use the same two-axis interference as the helium interferometer 126 for the wafer stage WST as the helium interferometer for the measurement stage MTB. Further, in order to measure the displacement of the measurement load ST, the γ displacement, the amount of deflection, and the roll f, the same interferometer as the Z interferometers 43A, 43B for the dome stage WST can be introduced. Next, an encoder system for measuring the position information of the wafer stage (4) in the χγ plane (including the rotation information of the ^ direction) will be described.

6) The composition and the like. U: The exposure apparatus 1A' of the embodiment is arranged such that the head unit 6 is disposed around the mouth unit 32 from the square. These read heads == unified 15. The fourth 碉 兀 62A~62D, although in Figure 3: circumventing the complexity is too complicated to save, but in fact through the frame: the member is suspended in the state to maintain the aforementioned projection unit called the main 38 200916979 The head units 62A and 62C are attached to the projection unit pU2 + X side and the -X side as shown in Fig. 3, and are arranged in the longitudinal direction of the X-axis direction. Further, the head units 62A, 62C respectively have a plurality of (here, five) gamma heads 6Si, 64j (i, j = i - 5) arranged at intervals in the x-axis direction. More specifically, the head units 62A and 62C are provided with an interval WD between the straight line (reference axis) LH (through the optical axis of the projection optical system pL and parallel to the X axis), except for the periphery of the projection unit pu. a plurality of (here, four) Y read heads (652 to 65s or 64 ι ~ Μ), and positions disposed in the periphery of the projection unit pu from the reference axis LH to a predetermined distance from the _γ direction, that is, A γ read head (645 or 65 small read head unit 62Α, 62C of the mouth unit 32) is provided with five read heads, which will be described later. Hereinafter, the read heads 65i, 64j are also used as necessary. The gamma read heads 65 and 64 are respectively described. The head unit 62A is configured to measure the position of the wafer stage WST (wafer table WTB) in the γ-axis direction (γ position) using the γ scale 39Υ (here). A γ linear encoder (hereinafter referred to simply as "γ encoder" or "encoder") of the five eyes is 70 Α (see Fig. 6). Similarly, the head unit 62 (:, uses the aforementioned Y scale 39 Υ 2 Measuring the gamma position of the wafer stage WST (wafer table WTB), the multi-eye (here, five eyes) The γ encoder 7〇c (refer to Fig. 6). Here, the readout units 62A, 62C respectively have five gamma read heads 64 (65! or 64) (i.e., measuring beams) spaced in the z-axis direction. The WD is set to be slightly narrower than the width of the Y scale 39Yl539Y2 in the X-axis direction (more precisely, the length of the lattice line 38). As shown in Fig. 3, the 'reading head unit 62' is provided with the nozzle member 32 ( The + Y side of the projection unit PU) is spaced apart from the reference axis LV in the γ-axis direction by 39 200916979. The plurality of (here, four) X read heads 665 to 66 are arranged at a predetermined interval WD. Further, the read head unit 62D, The γ side of the primary alignment system AL1 disposed on the opposite side of the read head unit 62 (the projection unit ρ ϋ) disposed on the opposite nozzle member 32 (projection unit ϋ) is disposed at a predetermined interval WD on the reference axis LV (here, four X read head 66] ~ 664. Hereinafter, X read heads 66 to 668 are also referred to as X read head 66 as necessary. The read head unit 62 Β is configured to measure the round stage WST using the X scale 39 χ ! X linear encoder with multiple eyes (here, four eyes) in the X-axis direction (X position) (hereinafter referred to as "X" "Code" or "Carved Horse" (70) (see Fig. 6). The 'read head unit 62D' is used to measure the X position of the wafer stage WST using the X scale 39Χ2 (here ^ four eyes) The X encoder 70D (see Fig. 6). Here, the interval between the adjacent read heads 66 (i.e., the measuring beams) respectively provided by the head units 62B, 62D is set to be γ in comparison with the aforementioned χ scale 39 Χ 2 The width in the axial direction (more precisely, the long product of the lattice line 37) is narrow. Further, the interval between the X-head 66 on the most side of the head unit 62 and the head 66 on the + γ side of the head unit 62D is set to be wider than the width of the wafer WTB in the Y-axis direction. Slightly narrower, it is possible to switch between the two read heads by the movement of the wafer stage in the γ-axis direction (the connection described later). In the present embodiment, the head units 62F and 62E are provided at a predetermined distance from each other on the _γ side of the head units 62A and 62C. The head units 62F and 62 are omitted in Fig. 3 and the like in order to prevent the drawing from being too complicated, but are actually fixed to the main frame for holding the projection unit pu in a suspended state through the supporting member. Further, the head units 62e, 62f and the aforementioned head unit 40 200916979 to 62D may be integrated with the projecting PU suspension support or may be provided in the above-described measurement frame, for example, in the case where the projection unit pu is suspended. The head unit 62E has four gamma read heads 6 to 674 having different positions in the X-axis direction. More specifically, the head unit 62A includes three gamma read heads 67i to 673 disposed on the reference axis LA side at the same interval from the interval on the secondary alignment system AL2li-X side, and is disposed at the same time. The innermost (+X side) Y read head 6?3 is separated from the χ side by a predetermined distance (a shorter distance than 1), and the secondary alignment system is separated from the reference axis LA to the + γ side by a predetermined distance. A γ read head 6 at the position of the + γ side. The head unit 62F is symmetrical with the head unit 62 in the reference axis LV, and includes four Y heads 68l to 684 which are arranged symmetrically with respect to the four γ heads 67 to 674 on the reference axis Lv. Hereinafter, the γ read heads 67l to 674 and 68l to 684 are also referred to as γ read heads, (10) as necessary. At least one γ read head 67, 68 is opposed to each other when performing an alignment operation to be described later. The Υ scale 3 9 Υ 2, 39 测量 is measured by the γ read head 67, 68 (that is, the γ encoder 70c, 7 构成 formed by the γ read head π, μ), and the position of the wafer stage wst (and 0 z) Further, in the present embodiment, when the baseline measurement of the secondary alignment system to be described later is performed (sec-BCHK (time interval)), one of the FD rods 46 is aligned with the reference grid in the X-axis direction and the second pair. The γ-reading of the quasi-system AW AL24 is adjacent, and the 682 is respectively opposed, and the γ position of the rod is measured by the position of the reference grid 52 of the γ-reading head 3' - 对 opposite to the pair of reference grids 52. Hereinafter, the Y encoder composed of the Y head 6 and the ton which are opposed to the pair of reference grids 52 respectively is referred to as a γ linear encoder (referred to as a 4 code 41 200916979 coder or an "encoder" as appropriate). E2, 70F2. Further, for identification, the γ encoders 70A, 70F constituted by the γ heads 67 and (10) opposed to the Y scales 39Y2 and 39Y1, respectively, are referred to as Υ encoders 70Ei, 7〇Fi. The above linear encoders 70A to 70F measure the position coordinates of the wafer stage WST by, for example, an analysis capability of about l1 nm, and supply the measured values to the main control device 20, which is based on the linear encoder 7 Two of 〇A~70D, or 7〇B, 70D, 70E!, 70 测量 three of the measured values f: the position of the wafer stage WST in the χγ plane, and according to the encoder 7〇e2 The measured value of 70F2 controls the rotation of the FD rod 46 in the 02 direction. Further, the constitution of the linear encoder and the like will be described later. As shown in Fig. 3, the exposure apparatus 1 of the present embodiment is provided with a plurality of oblique incident methods similar to those disclosed in the illumination system 90a and the light receiving system 9B, for example, as disclosed in the specification of U.S. Patent No. 5,448,332. Focus position detection system (hereinafter referred to as "multi-point AF system"). In the present embodiment, as an example, the irradiation system 9A is disposed on the +Y side of the -X end portion of the head unit 62E, and the + X end portion of the head unit 62F is disposed opposite thereto. + The Y-side is equipped with a light receiving system 9〇b. The plurality of detection points of the multi-point AF system (9〇a, 9〇b) are arranged at predetermined intervals along the X-axis direction on the detected surface. In the present embodiment, for example, a matrix in which the lamp array (M is the total number of detection points) or two rows and N columns is 1/2 of the total number of detection points is arranged. In Fig. 3, a plurality of detection points for which the detection beams are respectively irradiated are not individually illustrated, and an elongated detection area (beam area) AF extending between the irradiation (4) 9Qa and the light receiving system 90b in the axial direction of the X station is shown. This detection area AF, due to the Residents _. , and the length of the X-axis direction is set to be the wafer W 42 200916979

Since the diameters are the same, the general position of the wafer w is measured by sweeping the center circle W only in the γ-axis direction (face position): (information). In addition, the detection area AF is due to the γ-axis direction = the immersion area U (exposure area ΙΑ) and the alignment system (AL1, AL21~AL^ = between), so that the multi-point af system and the alignment system can be simultaneously The detection operation may be provided in the main frame for holding the projection unit pu, etc., but in the present embodiment, it is provided in the measurement frame 此外. In addition, the plurality of detection points are in columns or 2#. n columns are configured, but the number of rows and/or the number of columns is not limited to this. When not 2 u, it is better to make the position of the detection point in the X-axis direction different between different rows. The detection points are arranged along the x-axis direction. However, the detection points are not limited thereto, and all or a part of the plurality of detection points may be disposed at different positions in the y-axis direction. For example, the X-axis and the γ-axis may be arranged along the X-axis and the γ-axis. Hand in hand

Configure multiple detection points in the direction. In other words, the plurality of detection points may be different at least in the X-axis direction. Although in the present embodiment, the detection beams are irradiated to the plurality of detection points, but for example, the detection region of the detection region A f may be detected. . Further, the length of the detection region ^ in the direction of the x-axis may not be the same as the diameter of the wafer W. In the multi-point AF system (9〇a, 9〇b), a plurality of detection points are located near the detection points at both ends, that is, near the both ends of the detection area AF, and are arranged symmetrically with respect to the reference axis. __For the z position measurement surface position sensor read head (hereinafter referred to as "z read head")? 2a, 72b and 72c, 72d. These Z 5 selling heads 72a to 72d are fixed to the lower side of the main frame not shown. Further, the 'z 5 heads 72a to 72d may be provided in the aforementioned measurement frame or the like. 43 200916979 Z § sells the masters 72a to 72d, for example, using an optical displacement sensor read head (CD pickup type sensor read head) constituted by optical pickup used in a CD drive device or the like, which is from the top The wafer table WTB is irradiated with light, and the reflected light is received to measure position information of the surface of the wafer table WTB in the Z-axis direction orthogonal to the plane in the irradiation point of the light. Further, the head unit 62C has five z-heads 76 respectively at the gamma positions of the X-position heads 65, 64i (i, j=i to y, which are provided separately), respectively. 5). Here, the three z-heads 763 to 765, 74l to 743 belonging to the outer sides of the head units 62A, 62C, respectively, are arranged in parallel with the reference axis LH with a predetermined distance from the reference axis LJMi+Y. Further, the head unit 62a and the innermost z-heads 76l and 745 to which the coffee beans belong are arranged on the +γ side of the projection unit pu, and the second z-heads 762 and 744 from the innermost side are arranged in the Y-read. Head 652, respective γ side. Further, the five read heads 76j, 74i (i, bub 5) belonging to the head unit "A 62C" are arranged symmetrically with respect to each other with respect to the reference vehicle LV. Further, each z read head %, 74 is used and The read heads of the optical displacement sensors having the same z read heads 72a to 72d are the same as those of the z-read heads 72a and 72b. Here, the z read head 74 is located in the same manner as the z read heads 72a and 72b. Similarly, the Y read head % is located on a straight line parallel to the Y axis of the z read heads 72c, 72d. Further, the Z read head 743 and the Z read head 744 are parallel to the ¥. The distance in the axial direction, and the distance between the Z read head 763 and the Z read head 762 in the direction parallel to the x-axis, are spaced from the Z read heads 72a, 72b in parallel with the Y-axis direction (with the z read head 72, 72d). The intervals parallel to the γ-axis direction are substantially the same. Further, the z read head 44 200916979 743 and the Z read head 745 are parallel to the γ-axis direction, and the z read head % and the z read head 76l are parallel to the x-axis direction. The distance is shorter than the interval between the z read head and the direction parallel to the Y. The Z read heads 72a to 72d, the z read heads 741 to 745, and the z read head 76, ~765 As shown in FIG. 6, the signal processing/selection device is transmitted to the main control device 20, and the main control device 2 is read from the Z read heads 72a to 72d and the z read heads 74 to 745 through the signal processing/selection device m. And the read heads 76 and 765 select any z read head and operate in the active state through the signal processing/selecting means 17 to receive the position information detected by the 2 read heads in the active state. In this embodiment, the z read head 72 &~m Z read head 7\~745, the Z read head 76l~765, and the signal processing/selection control unit are included, and the composition is used to measure the wafer stage. The surface position measuring system 18 (the portion of the measuring system 200) of the axial direction and the position information of the tilt direction with respect to the χ γ plane. Further, in Fig. 3, the illustration of the measurement stage MST is omitted, and the liquid immersion area formed by the water Lq between the stage MST and the front end lens 191 is indicated by reference numeral 14. Further, in Fig. 3, the symbol indicates the loading position of the wafer portion carried on the wafer table WTB, and the symbol Lp indicates the loading position for the wafer to be loaded on the wafer table WTB. In the f-state of the present embodiment, the unloading position UP and the loading position Lp are symmetric with respect to the reference axis lv. Further, the unloading position UP and the loading position Lp can be made the same position. Fig. 6 shows the main control system of the exposure apparatus 1 、, and is centered on the main control unit 20 constituted by a microcomputer (or workstation) 45 200916979 for coordinating the entire apparatus. The memory 34 of the external memory device connected to the main control device 20 stores an interferometer system 丨丨8, coded as a system 15〇 (encoders 7〇a to 70F), and Z read heads 72a to 72d, 74i~ 745, Z read head 761 ~ 76S and other correction system correction information. In addition, in FIG. 6, various sensors such as the illuminance unevenness sensor 94, the spatial image measuring device 96, and the wavefront aberration sensor 98 are provided on the measurement stage MST, and are collectively referred to as sensing. Group 99. Next, the Z read heads 72a to 72d, 74A to 745, and 761 to 765 are represented by the Z head 72a shown in Fig. 7 as a representative. As shown in FIG. 7, the Z read head 72a includes a focus sensor FS, a sensor body ZH that houses the focus sensor FS, and a drive unit that drives the sensor body ZH in the z-axis direction (not shown). And a measuring unit ZE or the like that measures the displacement of the sensor body ZH in the z-axis direction. As the focus sensor Fs, an optical displacement sensor using the same optical pickup method as that of the CD driving device or the like is used, which irradiates the detection beam LB to the measurement target surface s and receives the reflected light thereof to optically The mode reads the displacement of the measurement object surface S. The configuration of the focus sensor and the like will be described later. The output signal of the focus sensor FS is sent to a drive unit not shown. The driving part (not shown) includes an actuator such as a voice coil motor, the movable part of the voice coil motor and the fixing part are fixed to the sensor body ZH, and the other side is set to receive the sensor body. ZH and the measuring unit ZE and the like are not shown in the housing portion. The driving portion is configured to keep the measuring object surface s at the focusing sensor 46 according to the output signal from the focus sensor to keep the distance between the sensor body ZH and the measuring object surface s to be relatively correct. 200916979 FS The optical system's best focus position) drives the sensor body ZH in the z-axis direction. Thereby, the sensor body Zh follows the displacement of the measuring object surface S in the Z-axis direction while maintaining the focus locking state. In the present embodiment, an encoder such as a diffraction interference type is used as the measuring portion ZE. The measuring portion ZE includes a reflective diffraction grating EG provided in a z-axis direction as a periodic direction on a side of the support member SM (fixed on the sensor body ZH and extending in the z-axis direction), and a diffraction grating with the diffraction grating (} Opposing the encoder head EH of the case that is not shown in the figure. The encoder read head irradiates the probe beam EL to the diffraction grating EG, and receives the reflected and diffracted light from the diffraction grating EG with the light receiving element. Thereby, the displacement from the reference point (for example, the origin) of the irradiation point of the probe beam el is read to read the displacement of the sensor body ZH in the Z-axis direction. In the present embodiment, as described above, in the focus lock In the state, the sensor body ZH is displaced in the z-axis direction ... 匕, the encoder reading head eh of the measuring part ZE is measured by the measuring body ZH纟Z The displacement in the axial direction is used to measure the position (Z position) of the surface of the measuring object. The measured value of the head reading 72a is supplied to the main control unit 20 through the aforementioned signal processing/selection device 17A. The focus sensor FS' includes, for example, the illumination shown in FIG. 8(A) System %, optical system FS2, light receiving system FS; three parts.

Grid (diffractive optical element) ZG illumination system FS "includes, for example, a light source (3) composed of a laser diode, and a diffracted light 47 200916979 optical system FS2 disposed on the optical path of the laser light emitted by the light source LD For example, the diffracted light including the laser light generated by the diffraction grating plate zg, that is, the polarization light splitting PBS of the probe light beam LB1, the collimating lens CL, the quarter wave plate (X/4 plate) WP And the objective lens OL, etc. The light receiving system FS3 includes, for example, a cylindrical lens cyl and a four-divided light receiving element ZD which are sequentially disposed on the returning light path of the reflected light beam LB2 of the detecting light beam lBi on the measuring target surface S. The FS is configured to illuminate the linearly polarized laser light generated by the light source LD of the illumination system fs i on the diffraction grating plate ZG, and the diffraction grating plate ZG generates a diffracted light (detection beam) LBi. The center of the detection beam LBi The axis (principal ray) is parallel to the Z axis and orthogonal to the measurement target surface s. Next, the detection beam LB!, that is, the polarization surface of the polarization plane of the polarization beam splitter pBs is p-polarized, and is incident on the optical system. FS2. In The system FSd 'detection beam LB丨 is transmitted through the polarization beam splitter pBs, converted into a parallel beam by the collimator lens CL, transmitted through the λ/4 plate wp, becomes a circularly polarized light, and is concentrated in the objective lens OL, and is irradiated to the measurement pair. The measurement object φ s generates a circularly polarized light that is opposite to the incident light of the probe beam LBi, that is, reflected light (reflected light beam) lb2. Then, the reflected light beam lb2 is oppositely incident along the optical path of the incident light (detection pupil LB1) Transmitted through the objective lens 、1, the Μ plate WP, and the collimating lens CL, and is directed to the polarization beam splitter. At this time, by transmitting the plate WP twice, the reflected beam LB2 is converted into a vibration: The reflected light I LB2 is bent in the traveling direction of the polarization beam splitter and sent to the light receiving system FS3. The LB2 is transmitted through the cylindrical lens receiving system F S3, and the reflected beam 48 200916979 CYL 'is irradiated in four segments The detection surface of the light-receiving element zd. Here, the cylindrical lens CYL is a so-called "bucket type" lens, and as shown in Fig. 8 (Β), the γ ζ cross-section has a convex shape in which the convex portion faces the Υ-axis direction, and as shown in Fig. 8 ( As shown in C), the χγ cross section has a rectangular shape. Therefore, the reflected beam LB2 transmitted through the cylindrical lens CYL is asymmetrical in cross-sectional shape in the z-axis direction and the z-axis direction to generate astigmatism. The four-divided light-receiving element ZD receives the reflected light beam LB2 at its detection surface. As shown in Fig. 9(A), the inspection side surface of the four-divided light-receiving element ZD is divided into four detection areas a, b, c, and d by dividing the two diagonal lines into two separate lines. The center of the detection surface is 〇zd. Here, 'the ideal focus state shown in FIG. 8(A) (the shape of the focus coincident I), that is, the cross-sectional shape of the reflected light beam LB2 on the detection side in the state where the probe beam LB1 is connected to the focus on the measurement target surface, As shown in Fig. 9(c), it is a circle centered on the center 〇zd. Further, in Fig. 8(A), the so-called front focus state in which the I focus is connected to the measurement target surface S! (that is, the measurement target surface S is located at the ideal position s〇', the four-divided light-receiving element ZD system and the figure 8(B) and FIG. 8(C) are equivalent to the state in which the symbol 1 is not in the position), and the cross-sectional shape of the reflected beam LB2 on the detection side is centered on the center 〇ZD as shown in FIG. 9(B). Horizontally long round. Further, in Fig. 8(A), the so-called back focus state in which the probe beam LBi is connected to the focus on the measurement target surface (that is, the measurement target surface S is located at the ideal position S〇' of the four-divided light-receiving element ZD system and is in Fig. 8(B) And a state equivalent to the state of the position indicated by the symbol j in Fig. 8(c)), the cross-sectional shape of the reflected light beam LB2 on the detecting side, as shown in Fig. 9(D), is a long circular circle centered on the center 〇ZD shape. 49 200916979 In the arithmetic circuit (not shown) connected to the four-divided light-receiving element ZD, the intensity of the light received by the four detection areas a, b, c, d is Ia, k, and Id' is the sub-type (7). The focus error i indicated by the calculation is calculated and output to the drive unit not shown. I = (Ia + Ic) - (Ib + Id) (7) Further, in the above-described ideal focus state, since the areas of the beam sections of the four detection areas are equal to each other, the focus error Z = 〇 can be obtained. Further, in the above-described front focus state, a focus error ^ can be obtained according to the equation (7), and in the back focus state, a focus error 〖> can be obtained according to the equation (7). The driving unit (not shown) receives the focus error I from the detecting unit in the focus sensor FS, and drives the sensor body ZH in which the focus sensor FS is housed in the manner of reproducing I = z. Axis direction. By the action of the driving part, the sensor body ZH will follow the z displacement of the measuring object surface s, so that the detecting beam must connect the focus on the measuring object surface s, that is, the sensor body ZH and the measuring object surface. The distance between s is always fixed (maintaining the focus lock state). On the other hand, the drive unit (not shown) can drive the sensor body ZH in the z-axis direction and position the measurement result of the measurement unit ze in accordance with the input signal from the outside of the Z read head 72a. Therefore, the focus of the probe beam LB can also be located at a position different from the position of the face of the actual measurement target surface s. By the operation of the drive unit (scale servo control), it is possible to perform the return processing of the switching of the Z head described later and the avoidance of the output signal abnormality 50 200916979. In the present embodiment, as described above, an encoder is used as the measuring portion ZE, and the Z-displacement of the diffraction grating EG provided in the sensor body ZH is read using the encoder read head eh. The encoder read head EH, since it is a relative position sensor that measures the displacement of the measurement object (diffraction grating EG) from the reference point, its reference point must be determined. In this embodiment, when a positioning pattern for detecting the end portion of the diffraction grating EG or a positioning pattern for the diffraction grating eg is provided, the reference position of the Z displacement can be determined by detecting the positioning pattern (for example, origin). In any case, the reference plane position ' of the target surface S can be determined corresponding to the reference position of the diffraction grating EG, and the Z displacement of the measurement target surface s from the reference plane position, i.e., the position in the z-axis direction, can be measured. Further, when the Z head is started up at the start of the exposure apparatus 100, the setting of the reference position of the diffraction grating EG (e.g., the origin, that is, the reference plane position of the measurement target surface s) is necessarily set. In this case, since the reference position is preferably set near the center of the moving range of the sensor body ZH. Therefore, the driving coil for adjusting the focus position of the optical system can be set to adjust the z position of the objective lens 〇L, so that: the reference plane position corresponding to the reference position near the center and the focus position of the optical system of the focus sensing state FS Consistent. Further, in the measuring unit, when the sensor body ZH is located at the reference position (for example, the origin), the origin detecting signal Z head 2a is generated, and the sensor body ZH and the measuring unit are housed in a housing (not shown). 'The light path length of the portion where the probe beam is exposed to the outside of the housing is also extremely short, so the effect of air shaking is very small. Therefore, the sensor including the Z read head is excellent in measurement stability (short-term stability) in a short period of the second degree of shaking of the 51 200916979, for example, compared with the laser interferometer. The other Z read head has the same configuration and power as the above-described Z read head 72a. As described above, in the present embodiment, the Z read head is similar to the encoder, and the Y scale is viewed from above (+Z direction). 39Y〗, the diffraction grating surface of 39Y2, etc. Therefore, by measuring the positional information of the different positions on the wafer table WTB with a plurality of z read heads, it is possible to measure the position of the wafer stage WST in the Z-axis direction f with 0 Υ rotation (rolling) and 0 X rotation. (panning). However, the accuracy of the tilt control of the exposure stage WST is not particularly important, so the position measurement system including the z read head does not measure the pitch, and each z-shell head and wafer table WTB The upper γ scale is 39丫1, 39丫2 in the opposite direction. The "" person describes the detection of position information (surface position information) of the wafer w in the x-axis direction by the exposure apparatus 100 of the present embodiment (hereinafter referred to as focus mapping). When the focus map is entered, the main control unit 20 is as shown in FIG. 10 (Α), and the head 663 (χ linear encoder 70D), which is opposite to the 39X2, and the opposite side of the knife J On the γ scale 39γ丨, the two γ read heads 673 (γ f, 'flat coder 7〇A, 70C) manage the wafer stage WST in the χγ plane, and are placed in the state of FIG. 10(A). The straight line (center line) parallel to the γ axis passing through the wTB center of the wafer table (substantially coincident with the center of the crystal 2 W) is in a state of being aligned with the reference line LV. Here, although not shown, the crystal The + γ side of the round load 曰 WST has a measurement stage, and water is held between the above-mentioned rod 乜 and the wafer table WTB and the projection #墨 I μ ϋτ ν 尤学系统 PL front end lens 191 (refer to Fig. 18). 52 200916979 Then, in this state, the main control unit 2 starts the scanning of the wafer stage WST in the +Y direction (SCAN), and after the start of the scanning, moves to the wafer stage WST in the +γ direction to make the multi-point AF. When the detection beam (detection area AF) of the system (9〇a, 9〇b) starts to be irradiated onto the wafer w, the Z read heads 72a to 72d and the multi-point AF system (9〇a, 90) are used. b) - Actuation (to enable it). Next, in the state where the Z read heads 72a to 72d and the multi-point AF system (90a, 90b) are simultaneously operated, as shown in Fig. 10(B), the wafer stage WST During the travel in the + γ direction, the position information (surface position information) of the surface of the wafer table WTB (the surface of the plate body 28) measured by the z read heads 72a to 72d in the Z-axis direction is captured at a predetermined sampling interval, and The position information (surface position information) of the surface of the wafer W in the Z-axis direction of the plurality of detection points detected by the point AF system (9〇a, 9〇b), and the information of each position of the captured surface and each sampling time The three measured values of the γ linear encoders 7A, 70C are assigned to each other and stored in the unillustrated memory one by one. Next, when the detection beam of the multi-point AF system (90a, 90b) is not irradiated on the wafer w, the main control device 20, that is, the end of the sampling 'converting the position information of each detection point of the multi-point af system (90a, 90b) into the position information of the Z heads 72a to 72d simultaneously captured as Benchmark data. Further detailed description is based on the average of the measured values of the Z read heads 72a and 72b. The predetermined point on the region of the body 28 near the end of the -X side (the region where the γ scale 3 9Y2 is formed) (for example, the midpoint of the respective measured values of the z read heads 72a, 72b, that is, equivalent to the multipoint AF system (9〇a, 9〇b) The multiple k-measurement points are arranged in substantially the same order on the x-axis. This point is referred to as the face position information in the left 53 200916979 r ^ 1 point Ρ 1). After reading the head center, the average value of the value of the measured value of the Fu's is determined as the predetermined point on the region (10) of the plate body 28 near the end of the +X side (for the area with the target ^39Yl) (for example, the head 72c, 72d) The midpoint of each of the measured values is equivalent to the point on the x-axis which is substantially the same as the arrangement of the plurality of detection points of the multi-point system, and the following point is called the right measurement. The location information in the face. Then, the main control device converts the position of each detection point surface i afl ' of the multi-point AF, system (synthesis) into the position of the left measurement point pi and the right measurement point as shown in Fig. 10(C). P2, the plane position link data 21 to 基准. The above-described conversion/control device 2Q is performed for all data taken at the time of sampling. As described above, by obtaining the above-described conversion data in advance, for example, the main control is set to 20 at the time of exposure, the surface of the wafer table WTB (the point on the region where the γ scale 39γ2 is formed) is measured by the z read head 74丨, %. (The point near the left measurement point 、 and the point on the area where the γ scale 39γι is formed (the point near the right measurement point Ρ2) are calculated to calculate the position of the wafer stage wst (rotation) Then, using the ζ position and the roll amount and the 载 rotation (pitch) amount of the wafer stage WST measured by the Υ interferometer, a predetermined calculation is performed to calculate the center of the exposure area wa (exposure center). The position of the wafer WTB surface is %), the amount of roll 〇, and the amount of pitch θ χ 'based on this calculation result', the exposure of the surface position connecting the left measurement point ρι and the surface position of the right measurement point P2 is obtained. The straight line of the center, by using the line and surface position data zl~zk, can perform the surface position on the wafer w without actually obtaining the surface position information of the surface of the wafer w. 200916979 Control (focus leveling control) Therefore, because Since the multi-point AF system is disposed at a position away from the projection optical system PL without any problem, the focus map of the present embodiment can be suitably applied even in an exposure apparatus having a small working distance or the like. The surface position of the left measurement point and the right measurement point P2 are calculated from the average of the measured values of the z read heads 72a, 72b, and the average of the 7 # 5S ^ , τ ® Ζ β sell heads 72c, 72d, respectively. However, the present invention is not limited thereto, and the surface position information in each of the detection points of the r 2 multiple 2 AF system (9〇a, 9〇b) may be converted into a surface position measured by, for example, the Z read heads 72a and 72e. The straight line is the reference surface position f. In this case, the difference between the measured value of the Z read head 72a and the measured value of the z read head... obtained at each sampling time point and the measured value of the z read head 72c can be separately determined. The difference between the measured value and the z read head 72d. Next, when the surface position control is performed during exposure or the like, the surface of the wafer table WTB is measured by the z read heads 741 and 76 to calculate the Z position and the turn of the wafer stage WST. 'Well by using this calculated value, the crystal WST is measured by the gamma interferometer 16... By performing the predetermined calculation on the difference between the surface position data zi to zk and 7 , the position control of the wafer w can be performed without actually obtaining the position information of the wafer surface. However, the above description is The wafer table WTB is premised on the unevenness. The surface is not in the X-axis direction. The focus correction is performed. The focus correction refers to the following two sides: the side end: the round table WTB in a reference state x Axis direction - side and side plate 30 The relationship between the detection results in the detection point (surface position information) of the measurement surface of the Behce multi-point AF system (90a, 90b) 55 200916979 This is only the first half of the processing), and In the same manner as the above-described reference state, the wafer platform 8 corresponding to the optimum focus position of the projection optical system PL detected by the space image measuring device 45 is obtained in the x-axis direction side and the other J end portion. Processing of position information (half processing after focus correction) 'Based on the results of these processings, the offset in the representative detection point of the multi-point AF system (9〇a, Na), that is, the best focus of the projection optical system Position and multi-point AF The processing of the deviation of the origin is detected. f When performing focus correction, the main control unit 20 is as shown in Fig. 11(A), based on the X head 662 (x linear encoder 7〇〇) opposite to the X-foot 39X2, and the Y scale 39Υ, respectively. The two gamma read heads 682, 673 (γ linear encoder 70FB 70E!) are positioned to manage the position of the wafer stage WST in the χ γ plane. The state of Fig. 1 1 (Α) is substantially the same as the state of the aforementioned figure. However, in the state shown in Fig. 1, the wafer stage WST is located at a position where the detection beam from the multi-point AF system (90a, 90b) is irradiated onto the measuring plate 30 in the Y-axis direction. C, .i (a) In this state, the main control unit 20 performs the first half of the focus correction as described below. In other words, the main control unit 2 detects the surface position information of the wafer table WTB detected by the Z heads 72a, 72b, 72c, and 72d on the X-axis direction side and the other side end portion. The face position information is the reference 'Using the multi-point AF system (90a, 90b) to detect the surface position information of the surface of the aforementioned measuring plate 3 (refer to FIG. 3). Thereby, the center line of the wafer table WTB is obtained—the measured value of the Z read heads 72a, 72b, 72c, and 72d in the state of the reference line LV (the wafer table WTB is on the X-axis side and the other side). The position information of the end face) and the multi-point AF system (90a, 90b) check the surface of the measuring plate 56. 200916979 Measuring point (the relationship between the detection results (surface position information) at or near the center of the plurality of detection points #叫(b) Next, the main control unit 20 moves the wafer stage wst to a predetermined distance by +γ, and arranges it on the measuring plate 3〇 in the projection optical system pL; the position near the end stops the wafer stage WST. Next, the main control device performs the second half of the focus correction as described below. That is, the 20 series is as shown in Fig. U(B), and the above-mentioned system is connected to the top of the t-focus. The surface position information measured by the z heads 72a to 72d is used as a reference, and the space measurement device is used while controlling the position (9) of the measurement plate 30 (wafer stage WST) in the optical axis direction of the projection optical system pL. Scanning in the z direction, as disclosed in the publication No. 2005/124834, et al. R or sheet is formed in a space measuring mark of the marking plate (not shown) on the reticle stage RST image, and determining the best focus position of projection optical system aperture based on the result. The main control device 2' is synchronized with the action of extracting the round-out signal from the aerial image measuring device 45 in the z-direction scanning measurement, and is used to measure the wafer table WTB in the x-axis direction - side and another One of the surface position information of the side end portion is a measured value of the head Mr 76s. Next, the values of the heads % and 763 corresponding to the optimum focus position of the projection optical system PL are stored in a memory (not shown). Further, in the half processing after the focus correction, the position of the measuring plate 30 (wafer stage WST) in the axial direction of the projection optical system ph is controlled based on the surface position information measured by the scanning heads 72a to 72d. £ (Z position), so the half-processing after the focus correction is performed on the way of the focus map. At this time, as shown in FIG. U(B), since the liquid immersion area 14 is formed between the projection optical system PL and the measurement board 30 (wafer table WTB), the measurement of the above-mentioned inter-image is transmitted through the projection. The optical system PL and the water Lq are performed. In addition, in FIG. 11(B), the illustration is omitted, but the measuring plate % of the space image measuring device 45 is mounted on the wafer stage WST (wafer table WTB), and the light receiving element or the like is mounted on the measurement stage MST. Therefore, the above-described measurement of the aerial image is performed while the wafer stage WST is in contact with the measurement stage MST (or the approach state) (refer to FIG. 20). (c) Thereby, the main control device 20 is based on the measured values of the Z read heads 72a, 72b, 72c, 72d obtained in the previous half of the focus correction (a) (the wafer table WTB is on the X axis) The relationship between the surface position information of the side of the direction and the other end, the relationship between the detection result (surface position information) of the detection point on the surface of the measuring board 30 by the multi-point AF system (9〇a, 90b), and the above ( b) the measured value of the Z read heads 743, 763 corresponding to the best focus position of the projection optical system pL obtained in the half process after the focus correction (that is, the wafer table WTB is on the X-axis side and the other The surface position information of the one end end is obtained, and the offset in the representative detection point of the multi-point AF system (90a, 90b), that is, the optimal focus position of the projection optical system and the detection origin of the multi-point AF system are obtained. deviation. In the present embodiment, the representative detection point is, for example, a detection point located at or near the center among a plurality of detection points, but the number and/or position thereof may be arbitrary. In this case, the main control unit 20 performs adjustment of the detection origin of the multipoint AF system so that the offset of the representative detection point becomes zero. This adjustment can be performed optically, for example, by adjusting the angle of a parallel flat plate (not shown) inside the Aiguang system 90b, or the detection bias can be adjusted electrically. Alternatively, the adjustment of the origin may not be performed, but the offset is first stored. Here, 58 200916979 performs the adjustment of the detection origin by the above optical method. Thereby, the focus correction of the multi-point AF system (9〇a, 90b) ends. In addition, the adjustment of the optical detection origin is difficult to set the offset to zero at all remaining detection points other than the detection point. Therefore, it is preferable that the remaining detection points first store the optically adjusted offset. Next, 'the offset correction of the detection value between the plurality of light-receiving elements (sensors) corresponding to the plurality of detection points of the multi-point AF system (9〇a, 90b) will be described (hereinafter, referred to as AF sensing). Inter-machine offset correction). When performing the offset correction between the AF sensors, the main control unit 2 is configured to irradiate the detection beam from the illumination system 9〇a of the multi-point AF system (90a, 9〇b) as shown in Fig. U(A). The Fd rod 46 having a predetermined reference plane is extracted from the output signal of the light receiving system 90b from the multipoint AF system (90a, 90b) which has received reflected light reflected from the surface (reference plane) of the fd rod 46. In this case, the surface of the FD rod 46 is set to be parallel to the Χ γ plane, and the main control device 20 obtains the output signal according to the above method, and finds I in the light receiving system 90b corresponding to the plurality of detection points. The relationship between the detected values (measured values) of the plurality of senses, and the relationship is stored in the memory, and the offset correction between the AF sensors is performed by electrically adjusting the detection bias of each sensor to make all The detected value of the sensor becomes, for example, the same value as the detected value of the sensor corresponding to the representative detection point at the time of the focus correction. However, in the present embodiment, when the output signal from the light receiving system 90b of the multipoint AF system (9〇a, 9〇b) is extracted, since the main control device 2 is not used as shown in Fig. 12(A), The z-read heads 744, 745, 76b 762 detect the inclination of the surface of the FD rod 46, so it is not necessary to set the surface of the FD rod 46 to be parallel with the surface of the φ rod 59 200916979. That is, as shown schematically in Fig. 12(B), the detected values of the respective detection points are the values indicated by the arrows in the figure, as long as the line connecting the upper ends of the detected values has the unevenness shown by the dotted line in the figure. That is, each detection value is adjusted so that the line connecting the upper ends of the detection values is shown by the solid line in the figure. Next, a parallel processing operation using the wafer stage WST and the measurement stage in the exposure apparatus 100 according to the present embodiment will be described with reference to FIGS. 13 to 23. Further, in the following operation, the main control unit 20 is transmitted through the main control unit 20 in the above-described manner. Liquid supply device 5 and liquid recovery device 6 of liquid immersion device 8

The switch control of the 阙 阙 is to fill the projection optical system PL ^ month " at any time with the exit surface side of the lens 191. Hereinafter, in order to make the description easy to understand, the explanation of the operation of the liquid supply device 5 and the liquid recovery device 6 for the month after and after the operation is used for most of the drawings, but in the respective drawings, the same member is given Symbols are sometimes not given. That is to say, the symbols contained in each of the drawings are different, but the same configuration is used regardless of whether or not there are symbols in the drawings. This point is also the same as the ones used in the description so far. Fig. 13 shows a state in which the exposure of the wafer w loaded on the wafer stage WST is subjected to the step-and-scan method. This exposure is based on the day-to-day alignment of the day (EGA, Enhanced Global Alignment, reinforced, full-wafer alignment): j-^, ,,,,,,,,,,,,,,,,,

The carrier WST is moved at a scanning start position (acceleration start position) for exposing each of the irradiation regions on the wafer w, and a scanning exposure operation (a pattern formed by the scanning exposure type stomach m region is formed on the reticle r) , by doing this. Further, the exposure is performed in the order of the irradiation region on the _γ side on the wafer W to the irradiation region on the side of + Y 60 200916979. Further, the liquid immersion area 14 is formed in a state of being formed between the projection unit PU and the wafer W. In the above exposure, the position of the wafer stage WST (wafer table WTB) in the χγ plane (including the rotation in the β z direction) by the main control device 20 is based on two encoders 70Α, 70C, and two Xs. The encoder 70Β, 70D is controlled by a total of three encoders. Here, the two χ encoders 70Β, 70D are composed of two X-read heads 66 which are respectively opposed by the Χ scale 39X1, 39Χζ, and two γ encoders 7〇A, 7〇c, which are γ scales. 39Υι, 39Υ2 are formed by the two gamma read heads 65, 64 respectively. Further, the rotation (shake) of the position and the direction of the wafer stage WST belongs to the head unit 62C according to the side of the x-axis direction and the other end portion of the wafer table WTB, respectively. Like 2 read head %, % 丨 measured value ^ empty system. The θ χ rotation (pitch) of the wafer stage W S 控制 is controlled according to the value of γ interference and U. In addition, when the third water deflector 28 including the read head 74i, 76. is directed to the wafer table WTB: the capture can also be controlled according to the read heads 74i, 76i and another 2 read value ' Wafer stage WST扃7 cylinders are shaken), and “rotation (pitch) I set, rotation (horizontal axis rotation (pitch). Nothing how to 'wafer stage WSM control' (ie wafer w "...the result of the control mapping of the rotation of the direction and the direction of the direction", according to the focus of the matter, Figure 1 3 shows the wafer stage WST in the circle, as shown by the circle) (3) Shuo 665 (Figure

襟2 % 乂 之 乂 Χ Χ Χ , , , , , , , , , , , , , , , , , , Therefore, the main control unit 20 is controlled using a 61 200916979 X encoder 70 Β and the positions (X, y, θ ζ) of the two 丫 encoders 7QA, 7(). Here, when the position of the yen table WST you m 1 ) moves in the -Y direction, read " ^ 665 from the X ruler 39\ detached (becomes opposite) 'replaces the head 6 circle frame residence The opposite direction of the X scale 39χ is a dotted circle ^λ2. Therefore, the main control unit 20 switches to the position of the wafer stage WST using the X encoder and the two γ encoders 70A (Χ, γ, 0ζ). )control. , ί

When the wafer stage WST is located at the position shown in FIG. 13, the heads %, 763 (shown by circles in FIG. 13) are respectively opposed to the γ-rod Μ γ. Therefore, the main control unit 20 uses the head A, and executes: the position (Ζ, ΘΥ) control of the round stage. Here, when the wafer stage moves from the position shown in FIG. 13 to the +X direction, z reads 帛%, % is detached from the corresponding γ scale, and instead, the z read head 76<Fig. 13 _ is circled by a dotted circle Live as shown) opposite Y scale 39Υ2, 39Υι. Therefore, the main control unit 20 is switched to be controlled by the position (Z, 0 y) of the wafer stage WST of the read heads 744, 764. As described above, the main control unit 20 constantly switches the encoder and the z-head used in accordance with the position coordinates of the wafer stage WST to perform position control of the wafer stage WST. Further, the position (X, Υ, Ζ, Θχ, 0y, 6 > z) of the wafer stage WST using the interferometer system 118 is measured at any time independently of the position measurement of the wafer stage WST using the above-described measuring device system. Here, the X position of the wafer stage WST and the 0 ζ rotation (biasing) are measured using the X interferometer 126, 127, or 128 constituting the interferometer system 118, and the γ 62 200916979 position is measured using the γ interferometer i 6 , 6 > χ rotation, and 0 z rotation, the Y position, the Z position, the 0 y rotation, and the 0 z rotation are measured using the Z interferometers 43A, 43B (see FIG. 1 or 2, not shown in FIG. 13). The X interferometers 126, 172, and 128 use either one depending on the Y position of the wafer stage WST. In the exposure, the X interferometer 126 is used as shown in FIG. The measurement result of the interferometer system 118 is used for position control of the wafer stage WST in addition to the pitch (Θ X rotation), auxiliary or when it is described later, or when the encoder system 150 cannot be measured. After the exposure of the wafer W is completed, the main control unit 20 drives the wafer stage WST up to the unloading position. At this time, the wafer stage WST separated from each other in the exposure can be brought into contact with or close to the separation distance of 3 〇〇 / zm & right, and moved to the proximity state. Here, the -γ side of the FD rod 46 on the measuring stage MTB is in contact with or close to the + γ side of the wafer table WTB. By maintaining the close contact state, the two stages WST, MST are moved in the -Y direction, and the liquid immersion area 14 formed under the projection unit pu is moved to the measurement stage MST. For example, Fig. 14 and Fig. 15 show the state after the movement. The round table WST is driven by the drive to the unloading position up.

. When the double smashing shovel (wafer stage WST in the exposed area) is detached, it constitutes the encoder 7〇A~

Further, the corpse/T has a Z read head, that is, the position control device 20 from which the wafer stage WST of the encoder 70A cannot be carried out from the wafer is switched to the position control according to the interferometer system stage WST. Here. Department 63 200916979 The interferometer 128 is used in three X interferometers 126, 127, 128. Thereafter, the wafer stage WST is released from the proximity of the measurement stage MST, and is moved to the unloading position up as shown in Fig. 14. After the movement, the main control unit 20 unloads the wafer W on the wafer table WTB. Next, the main control unit 2 drives the wafer stage WST in the +X direction to move to the loading position LP, and as shown in Fig. 15, loads the next wafer w onto the wafer table wtb. In parallel with these actions, the main control unit 20 is the execution plant Sec-BCHK (Second Baseline Inspection), which performs position adjustment of the FD rod 46 supported by the measurement stage MST in the χγ plane, and Baseline measurement of four secondary alignment systems AL21 to AL24. Sec-BCHK is based on the time interval when the wafer is replaced by the mother. Here, in order to measure the position (0 ζ rotation) in the χ γ plane, the aforementioned γ encoder 7 〇 ε 2, 7 〇 1 2 2 is used. Next, as shown in FIG. 16, the main control unit 20 drives the wafer stage WST to position the reference mark fm on the measuring board 30 in the detection field of the primary alignment system AL1 to determine the alignment system AL2丨AL24. The first half of the Pri-BCHK (first baseline check) of the baseline position of the baseline measurement. At this time, as shown in Fig. 16, the two gamma read heads 682, 673 and an X read head 66i (shown by the circle in the figure) are respectively opposed to the X scale 39Υ, 39γ2 and the X scale 39X2. Therefore, the main control unit 2 switches from the interferometer system u 8 to the stage control using the encoder system 150 (encoders 70A, 70C, 70D). The interferometer system 118 is again used in addition to the measurement of the θ X rotation. In addition, the X interferometer 127 of the three X interferometers 126, 127, 128 is used. Next, the main control unit 20 starts the wafer stage wst orientation detection alignment mark (attached to the three primary alignment illumination areas) while managing the position of the wafer stage WST based on the measured values of the three encoders. The + γ direction of the position moves. Next, when the wafer stage WST reaches the position shown in Fig. 17, the main control unit 20 stops even if the wafer stage WST. Prior to this, the main control unit 20 activates the z read heads 7h to f at the point in time when the z read heads 72a to 72d are all or part opposite to the wafer table wtb or before.

(Make it activated) to start the measurement of the wafer stage WST "z position and tilt rotation". After the wafer stage WST is stopped, the main control unit 20 uses the primary 1 first AL 1 and the primary alignment system AL22, and the AL2 is substantially simultaneously and individually detected to be aligned with the three-aligned illumination area As. Mark (refer to the star mark in Fig. 17), and then store the detection results of the above three alignment systems AW, A% AL23 and the measured values of the above three encoders when the detection is performed in association with each other (4) Graphic memory. : As described above, in the present embodiment, 'detecting an alignment illumination area once

At the position of the alignment mark, the gentleman hits τζ S , and ° 仃 until the measurement stage MST and the wafer stage WST become in contact (or take the "1" close to the evil). Then, by the main control =, the two MSTs starting at the contact state (or close to the state) are set from the above position to the + γ side to the pair of five secondary alignment illumination areas: the forward movement direction is used to detect the attachment stage W to +Y The direction shift = the position of the record. In the two-load system, as shown in Figure η, starting from the multi-point AF / I'm the main control device 20 〇% will detect the beam to the wafer table WTB wide a, 9 ° b) The illumination system ..., the shot. The detection area β of the multi-point af system is formed on the wafer table WTB 65 200916979. Then, in the two stages WST, the MST moves in the + γ direction as the two stages WST, When the MST reaches the position shown in Fig. 18, the master '20 performs the first half of the focus correction described above, and finds that the z read head 72a, 72b is in the state where the center line of the wafer object is LV-induced. The measured values (wafer table WTB in the direction of the x-axis - side and the other - side end 2 position information), and multi-point AF system (9〇a, test The relationship between the detection results of the surface of the plate 3 (surface position information). At this time, the liquid immersion area is formed on the FD rod 46. Then, the two stages WST, MST are kept in contact (or close to the sadness). In the state, it moves further in the +γ direction and reaches the position shown in Fig. 19. Here, the main control device 20 has 'used five alignment systems AL1, AL21 to AL24 substantially simultaneously and individually detected attached to five Alignment marks of the secondary alignment of the illuminating area (refer to the star mark in FIG. 19), and then the detection results of the above five =, the quasi-system, the AL1, the ΑΙ^^ΑΙ^, and the measurement for measuring the detection At this time, the measured values of the three encoders 70A, 70C, 70D at the position of the wafer stage WST in the XY plane are stored in association with each other in a manner not associated with the memory (or memory 34). The main control unit 2 controls the wafer stage WST in the Χγ plane according to the measured values of the head 662 (χ linear encoder 7〇d) and the γ linear encoder yOFh 70E] which are opposite to the X scale 39X2. Further, the main control device 20 ends the above-mentioned five secondary alignment irradiation areas After the simultaneous detection of the alignment marks of the domain, the two stages WST in the contact state (or close state) are again started, and the MST moves to the + γ direction 66 200916979, and as shown in FIG. 19, the z reading is used. The heads 72a to 72d and the multipoint af system (90a, 90b) start the aforementioned focus mapping. Next, when the two stages WST, MST reach the measurement board 3 shown in Fig. 2A, the position is placed near the lower side of the projection optical system pL. At this time, the main control device does not switch the z read head for controlling the position (z position) of the wafer stage WST in the optical axis direction of the projection optical system pL to the z read head 7 rolling %", and continues to Z The position information of the face measured by the read heads 72a to 72d is the reference, f

In the state where the z position of the wafer stage WST (measurement plate 30) is controlled, the latter half of the focus correction is performed. Then, based on the results of the first half of the focus correction and the second half of the processing, the main control unit 2 obtains the offset of the representative detection point of the multipoint AF system (_, (4) according to the above procedure, and stores it in the memory not shown. Then, when the main control device 20 reads the mapping information obtained from the result of the focus mapping during the exposure, the offset amount is added to the mapping information. In addition, in the state of FIG. 20, the foregoing focus mapping is continuously performed. By moving the two stages WST, ^Y in the above contact state (or near state), the wafer stage WST is brought to the position shown in Fig. 21, 'the main control unit 2 〇 even if the wafer is carried Stop at this position and move the measurement stage MST continuously to the + γ direction. Next, the device uses five alignment systems al1, AL2i to AL24A: individually detect the alignment marks attached to the five cubic alignment illumination areas. (Refer to the star mark in Fig. 21), and the detection of the above five alignment systems AL1, AL2i~, 4/, and the results of the above three codes when the detection is performed are associated with each other. Way to store inside At the same time, focus mapping is continued for 67 200916979. On the other hand, after a predetermined time elapses from the stop of the wafer stage WST, the measurement stage MST and the wafer stage WST are in contact (or close to each other). Move to the disengaged state "After moving to this separated state, the main control device stops at this position even if it measures the exposure position of the MS dosing exposure (where it stands by until the start of exposure). - Person, main control device 2〇 starts moving the wafer stage WST in the +γ direction to the detection position of the alignment mark attached to the three quadruple alignment illumination areas. At this time, the focus mapping is continued. On the other hand, the measurement stage MST system In the above-mentioned exposure start standby position standby. Next, when the wafer stage WST reaches the position shown in FIG. 22, the main control unit 20 immediately stops the wafer carrier, and uses the one-time alignment..A alignment system AL22. , AL23 roughly simultaneously and individually check the wafer ~ the last three times alignment alignment of the illumination area (see: star mark in 22), and the above three alignment system AL1, like, 3 detection knot And at least: among the above four encoders when performing the detection:: The measured values are stored in association with each other in the manner of being associated with each other. The above-mentioned warming is also continued to focus on the focus map 'measurement stage MST. Then, the main control device 20 uses the measured value of the encoder corresponding to the total obtained in the above manner, and passes through the heart to test the result and the description of the test. Patent No. 4,780,617, JU °, 曰, etc. Uncounted statistical operations, 篡屮μ, +, encoder 70B. 70D 7〇E 7 B % ^ 150 system (with the alignment of the secondary material ^ 4 axis) The detection center of the standard system AL1 is the XY coordinate system of the origin 68 200916979. The upper part of the wafer W is 03 6_L I- jin has the arrangement information (coordinate value) of the area.

', human master control device 2G - side again to the wafer stage WST to + Y

The direction shifts while the focus mapping continues. Next, when the detection beam from the multi-point AF system (90a, 90b) is deviated from the surface of the wafer w, the focus map is not ended as shown. Thereafter, the main control unit 20 moves the wafer table WTB (wafer stage) to a scanning open position (acceleration start position) for exposing the first irradiation area on the wafer W, while moving The head of the control for the position and rotation of the wafer stage wst is switched from the heads 72a to 72d while maintaining the z position of the wafer stage WST, Θ y rotation, and 0 χ rotation. To read the head 74!, 74]. After switching, the main control device 20 immediately performs step scanning through liquid immersion exposure according to the result of the aforementioned wafer alignment (EGA) and the latest baseline measurement results of the five alignment systems AL1'AL2 to AL22. In the exposure mode, the reticle pattern is sequentially transferred to the plurality of irradiation regions 埤Q on the wafer W, and the same operation is repeated. Next, a method of calculating the z position and the tilt amount of the wafer stage wst using the z read head measurement result will be described. The main control unit 2 测量, in the focus correction 盥 focus mapping, uses the Z heads 70a to 70d constituting the surface position measuring system 18 〇 (refer to FIG. 6 ) to measure the height z and the tilt of the wafer table WTB (rolling) )Θ y. Further, the main control unit 20 measures the height z of the wafer table WTB and the tilt (cross) 0 y using two z read heads 7 弋 76+, which are any one of 1 to 5, at the time of exposure. Further, each of the Z read heads irradiates the probe beam to the corresponding γ scale Μ, or the upper surface of 39Y2 (the surface of the reflective diffraction grating formed thereon), and receives the reflected light, thereby measuring each scale (reflective type) The position of the surface of the diffraction 69 200916979 raster). Fig. 24(A) shows the height of the reference point „, the door degree Z〇, the rotation angle around the X axis (inclination angle), and the rotation angle around the Y axis (the two-dimensional flat Z of the inclination angle Μ y The height Z of the position of the plane (X, Y) is obtained by the function of the following formula (8): f(X, Y)=- -tan Θ y · Χ+ tan 6» χ · Υ+ Ζ〇(8) As shown in Fig. 24(B), at the time of exposure, two scanning heads 74 "76#, j is any one of 1 to 5" are used, and the moving reference plane of the wafer table Wtb and the light of the projection optical system PL are measured. The intersection point (reference point) of the axis AX, the height Ζ and roll of the wafer table WTB from the moving reference plane (the surface substantially parallel to the χγ plane). Here, for example, the reading head μ% π is used; Similarly to the example of Fig. 24(A), the height of the wafer table WTB at the reference point 设为 is Z〇, the tilt around the X axis (pitch) is set to 0 χ, and the tilt around the γ axis (rolling) ) is set to 0. At this time, the read head 743 located at coordinates (pL, ^) in the Χγ plane, and the γ scale 39Υι, 39Υ2 respectively located at the coordinates (Pr, qR)i and read head 76s (formed) The measured value Zl of the surface position of the reflective diffraction grating), Zr ' is based on the same theoretical formula (9), (1〇) as the formula (s). ZL - -tan Θ y * pL + tan 6> x · qL + Z〇...(9) ZR= -tan 6> y · pR+ tan 0 x · qR+ Z〇...(10) Therefore 'through the theoretical formula (9), (10) 'the height z of the wafer table Wtb 200916979 at the reference point 。. With the horizontal (four) y, the z read head can be used. 743, % measured value z ZR ' is expressed as sub-formula (11), (12). ••*(11) ... (12) Z〇{Zl + ZR-tan 0 X · (qL + qR)}/2 tan^ {ZL-ZR-tan0 χ . (qL-qR)}/(ρκ.ρ〇 In addition, when using other combinations of Z read heads, 'by using theoretical formula (U), (10) Calculate the wafer table WT...degree z and the roll Θy at the reference point 。. However, the pitch θ x uses another sensor system (in the case of the actual system) The measurement results are as shown in Fig. 24(B), using the four Z read heads 72a to 72d for focus correction and focus mapping, and measuring multiple detection points in the multi-point AF system (9〇a, gauge). Center point 0, the height z of the wafer table WTB and the roll ^. Here, the z read heads 72a to 72d are respectively set at the position (x, Y) = (pa, qa) , (pb,

Qb), (pc, qc), (pd, qd). This position is shown in Fig. 24(B), which is set symmetrically with respect to the center point - 〇' = (〇x', 〇y'), that is, Pa = Pb, Pc = Pd, qa = qc, qb = qd, X(Pa+Pc)/2=(Pb+pd)/2=〇x,,(qa+qb)/2=(qc + qd)/2 = 〇y'. From the average of the measured values Za and Zb of the Z-stained heads 72a, 72b (Za + Zb) / 2, the height Ze of the point W of the wafer table WTB at the position (Pa == pb, 〇y,) is obtained and read from Z. The average value (Zc + zd)/2 of the measured values Zc, Zd of the heads 72c, 72d is determined as the height zf of the point f of the wafer table WTB at the position (pc = iPd, 〇y,). Here, the height of the wafer table WTB at the center point is set to z〇, and the inclination around the γ axis (transverse) is Θ y, and Ze and Zf are respectively based on the theoretical formula (13), 〇 4). 71 200916979

Ze{ = (Za+ Zb)/2} = -tan Θ x · (pa+ Pb'20x,)/2 + Z〇 ...(13)

Zf{ = (Zc + Zd)/2} = -tan 0 y · (pc + pd-2°x,)/2 + Z〇...(14) Thus, through theoretical equations (13), (14) The wafer table WTB has a height Z〇 and a roll of 0 y at the center point ,', and the measured values Za to Zd of the Z read heads 70a to 70d can be used to represent the following equations (15) and (16). Z〇= (Ze+ Zf)/2= (Za+ Zb+ Zc+ Zd)/4 (15) tan 0 y = -2(Ze-Zf)/(pa + pb-pc_pd) = -(Za + Zb-Zc- Zd)/(pa +

Pb-Pc-Pd) (16) where 'pitch 0 x is a measurement result using another sensor system (interferometer system 1 8 in this embodiment). As shown in FIG. 16, the servo control of the wafer stage WST from the interferometer system 1丨8 is switched to the encoder system 150 (encoders 7A to 7〇F) and the surface position measurement system 180 (Z read head 72a). ~72d, 74丨~745, 76丨~765) After the servo control, since only the Z read head 72b, 72d is opposite to the corresponding Y scale 39Yl5 39Y2, the formula (16) cannot be used. Calculate the z position of the wafer table WTB at the center point. At this time, equations (17) and (18) can be used. ...(17) ...(18) Z〇={Zb+Zd-tan0x. (qb+qd.2〇y5)}/2 tan^y={Zb-Zd-tan0x. (qb.qd)}/(pd_pb 72 200916979 Then, the Japanese yen loading table wst moves in the +z direction, and the z heads 72a, 72c are aligned with the corresponding Y scales 39γι, 39γ2, and the above equations (15) and (16) are applied. As described above, the scanning exposure of the wafer W is performed by the following method: that is, the wafer stage (four) is slightly driven in the Z-axis direction and the oblique direction according to the unevenness of the surface of the wafer W to adjust the wafer W. The position and tilt (focus leveling) are such that the exposed area IA of the surface of the wafer w coincides with the projection [the depth of focus of the image plane of the optical system PL. Therefore, a focus map for measuring the unevenness (focus map) of the surface of the wafer w is performed before the scanning exposure. Here, the unevenness of the surface of the crystal "w" is as shown in _ 1 〇 (B), while carrying the wafer. WST moves in the + γ direction, separated by a predetermined sampling interval (ie, γ interval), to use the z read head 72 & ~ 72 (1 measured wafer table WTB (more correctly, the corresponding gamma scale 39 Υ, 39 Υ 2) The surface position is based on the measurement using a multi-point AF system (90a, 90b). More specifically, as shown in Fig. 24(B), the gamma scale measured from the z read head 72 & The position of the surface of ZaY and Zb of 39Y2 is averaged. The surface position of the wafer table WTB at point e is obtained, and the average of the surface positions f Zc and Zd of the Y scale 39Y! measured by the z read heads 72c, 72d is obtained. The wafer 纟 is at the '.' occupant position Zf. The multi-point AF system has a plurality of detection points and the above. The 〇 is located on the straight line parallel to the χ axis of the point e and the point f. 10(c), the wafer table WTB is connected to the surface position Ze at the point e (in the figure) and the surface position at the point f (p2 in Fig. 1(c)): The multi-point af system 9(10) is used to measure the surface position Z0k of the wafer W at the detection point Xk. 73 200916979 Z(X)= -tan^ y · X+ Z〇...(19) where ' Z 〇 and tan 0 y, using Z read head 7 The measurement results Za to Zd of 2a to 72d are obtained from the above equations (15) and (16). Through the result of the obtained surface position Z〇k, the surface of the wafer w is obtained by the following equation (2〇). Concave data (judging map) Zk. ', ',

Zk= Z〇kZ(Xk) (20) In the exposure day, the wafer stage WST is slightly driven in the z-axis direction and the tilt direction according to the respective focal region Zk obtained by the above-mentioned manner. Thereby, the focus is adjusted in the same manner as described above. Here, at the time of exposure, the wafer table WTB is measured using the Z read heads 74i, 76j (i, 1 to 5) (more correctly, the corresponding Y "foot 3 9 Y2, 39Y" plane position. Therefore, again Set the reference line 聚焦(χ) of the focus map zk. Among them, z〇 and tan 0 y are measured using the z read head 74丨, 76j(i, ～5), Zl, Zr, from the above equation (11), (12) The above steps are performed to convert the surface position of the surface of the wafer W to Zk + z (Xk). In the present embodiment, Z is used for the z, 0 y position of the wafer stage WST. 72d, 74! ~ 745, 7 heart ~ 765 measuring the position of the Y scale 39Yi, 3 9 Y2 (opening into this reflective diffraction grating), by applying the measurement results to the equation (11), (12) Calculate. Here, as the parameters of the equations (11) and (U), the position of the z read head (more precisely, the χ γ position of the measurement point) is required. As a result, the error caused by, for example, the unevenness of the γ scale 39Υι, 39Y2 is included. Therefore, the concave and convex data of the γ scale 39Υι, 3 9 Υ2 is prepared in advance, and the measurement result is corrected using the data. Here, the concave 74 200916979 Since the system is created as a function of the two-dimensional coordinates (χ, γ), it is necessary to read the position of the 2 read head when reading the necessary correction data from the concave-convex data. Further, even if the reading head 72a is correctly known ~72d, 74ι~745, 76, ~76s design position, it is also possible to change the setting position of the reading head due to the long-term use of the exposure device 1. Therefore, it is necessary to periodically measure the reading head Set the position and use the latest result to correct the measurement result of the read head and calculate the Z, 0 y position of the wafer stage WST. In order to measure the Z read head 72a~72d, the set position of 76丨~765 is in the crystal. On the round table WTB, for example, γ scales 39Y3, 39Y4 shown in Fig. 25(A) are prepared. Among them, in Figs. 25(A) and 25(B), in the convenience of illustration, the Y scales 39Y3, 39Y4 are placed. The width of the Y-axis direction (L1 to be described later) and the separation distance between the Y scales 39Y3 and 39Y4 and the Y scale 39Υι, 39γ2 (L2) described later. The Y scale 39Y3, 39Y4 ' is the gamma of the measurement target surface of the Z read head. The reflection type diffraction grating having the same scale 39γι and 39Y2 is constructed as shown in Fig. 26(A). From the Y scale 39Yl, 39Y2 separated by a predetermined separation distance L2 ' g history of the + Υ end of the wafer table WTB. Here, the predetermined separation distance L2 and the Υ scale 39 Υ 3, 39 Υ 4 width L1 in the Υ axis direction is set to The width of the cross section of the probe beam LB of the read head is, for example, a few am. Further, the width of the ruler 39 Υ 3, 39 Υ 4 in the X-axis direction is set to be equal to the width of the γ scale 39Y2. The main control unit 20 measures the set positions of the read heads 72a to 72d, 74ι to 745, 76ι to 765 by using the Y scales 39Y3, 39Y4 in the following manner. This 75 200916979 is selected from the Z read heads 72a, 72b, 741~745, one is selected from the z read heads 72c 72d, 76!~765, and two representative read heads are selected. The set positions of the two Z read heads are measured. In Fig. 25(A), the z read head 743 763 is selected as a representative read head. In addition, during the measurement, the wafer stage WST maintains the reference posture. That is, the wafer stage WST is positioned at a reference position in the direction of four degrees of freedom (z q χ gy 6 > z). Further, the γ interferometer 16 is used to monitor θ χ, 0 ( ζ position, using the Ζ interferometer 43 Α, 43 Β monitor Ζ, 0 y position, to control the wafer stage WST so that it does not shift in the four degrees of freedom direction. Further, the X, γ position is monitored by the X interferometer 127 and the Y interferometer 16 to drive the B 曰 round stage WST to the two degrees of freedom direction (X γ). The Z head 743, 763 is used to scan the γ scale 39 γ4, 39 γ 3. At this time, the read heads 743, 763 are moved to the scale servo state. That is, the servo control is performed such that the focus of the probe beam 1B of the read head 74 763 is consistent with the measurement result from the interferometer system 118. The predicted γ scale 39γ4, 39γ3. Under this U-shaped sorrow, the intensity of the reflected light of the probe beam LB is measured using the focus sensor FS inside the 2 read head, that is, the four detection areas of the quad split light receiving element zd. a, b, c, d are the sum of the intensities of the reflected light respectively. I, == (Ia + Ic) - (Ib + Id) (21) The above formula is the same as the formula (7).

The 曰曰 round table WST is moved in the Y-axis direction, and the Z head 743, 763 is used to scan the Υ scale 39Υ4, 39Υ3» in the x-axis direction, and the wafer stage WST 76 200916979 moves in the +Y direction, the Z read head 743 The scanning point of 763, that is, the irradiation section of the detecting beam LB, intrudes from the γ scale π, and the + γ side of Mi into the region (the region where the reflective diffraction grating is formed). In Fig. 25(A) and Fig. 26(Α), the detecting beam of the scanning heads 743, 76s [the scanning section of the cymbal is located in the scanning area of the Υ scale 39Υ4, Mi. When the wafer stage wst is further moved in the +Y direction, the irradiation section of the probe beam LB of the Z read head 763 is separated from the separation area between the γ scale 39γ4, 391 and the γ scale MY, MY. Through the above-mentioned Z reading head 74〗, the irradiation section of the 76s probe beam and the relative displacement of the ruler 39Y4, 39丫3 in the γ-axis direction, the focus of the formula (2i) °° the signal I is as shown in the figure The curve shown in 26(B) changes as shown. When the illumination cross section of the beam LB is directed to the Υ scale 39Υ4, the 39 Υ3^ area output signal I' changes, and the Υ region which is completely located in the scanning area is set. ^ Therefore, the γ setting position of the read heads 743, 763 can be determined from the position Υ1 of the two intersections of the input signal I' and the predetermined cut-off level (the threshold "), and the midpoint Υ0 of the Υ2. In addition, the output signal of the focus sensor, even if the score Q 〇 shown in Figure 26 (; Β) is generally weak, the output signal I, and the cut level (provision) SL equals 罢#, position Υ1, Y2 will change, but the midpoint Y 0 will not change. π. Therefore, it is possible to correctly set the reading heads 743, 763 and set the cutting level (the threshold value) to the half value of the maximum output I' 4 max of the output signal !! , max/2. At this time, even if the maximum rotation of the focus sensor T, » 1 max is less than the threshold SL, the midpoint Y0 can be determined. 77 200916979 Similarly, by using 7 Saki, > ι Ζ 卖 硕 7 〜 〜 763 763 763 Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ Υ 743 743 743 743 743 743 743 743 743 743 743 743 743 743 743 743 743 743 743 743 743 In addition, when it is not possible to use γ庐ρ 〇Λ ν with “meters 39Υ4, 39Υ3, or use Υ scales 39Υ4, 39Υ3 measurement ^ 篁 does not work at this time, that is, using the Υ scale 3 9 Υ 39Yi diffraction grating End (also 2' 丨, force J γ 示 示 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 39 Read head 743 763, scan Y scale 39Y, 39V + A ' ' Yl - γ 。. Here, the wafer stage WST is moved in the + Y direction, in the γ cylinder ten a magnetic, on the Y axis Direction scanning γ scale 39γ2, 39Υι-Υ知知. At this time, the convergence of the 隹 salt, the eyes crying P ekf ..., the output signal j of the detector FS, (formula (21)) is shown in Figure 26 (C) The curve s shown + plus _ fiber ΥΙ _

The people's ^ does not change. Therefore, the threshold SL is set to the half value r max/2 of the maximum output I' max, from the gamma position of the intersection of the input signal, the equation (21) and the clipping level (progress). 〇 〇,, set the γ setting position of the reading head 74% 763. Similarly, by using 7 # as 1 /1 n r t ,

ZUse the Z-sulfur head to scan the Y scale 39, 2, 39 Υ in the X-axis direction (also the Sun X 39Y4, 39Y3) at the ±X end, and determine the position of the Z read head 743, 76. For the remaining read heads, the set positions are also measured in the same manner as the representative read heads 743, 763, and the relative positions based on the set positions of the read heads can also be measured. As described above, the main control unit 2 periodically measures the set positions of the Z heads 72a to 72d, 74丨 to 745, 761 to 765 of the surface position measuring system 180, and stores the measurement results in the memory 34 or Internal memory. Next, when driving the wafer stage WST, use the latest results to read out the necessary correction data from the bump data, and correct the measurement results of z, ,, 丄, 丄 贯 硕 且 且 且 且 且 且 且 且 且 曰 曰 曰 曰 曰 曰 曰 曰The (Z, 0 丫) bit w of the round stage WST. The day yM sets the position of the wafer stage WST in the axial direction and the θγ direction. In the description, the main control device 20 performs the control of each part of the light-receiving device (the control of the carrier 3 (the reticle stage RST, the wafer stage WST, etc.), the interferometer system, and the system 118, Encoder system 150, etc.), but not limited to this, spring r

However, at least a part of the control performed by the main control device 20 can be shared by a plurality of control devices. For example, the boring tool can also be provided under the management of the main control unit 20, such as the system for controlling the stage system, the control of the encoder system 150, and the read position switching of the surface position measuring system 180. Further, the control performed by the main control device 2G is not implemented by hardware, and may be implemented by a computer program for specifying the main control device 2 or the respective control devices that share the control device. 'And by software to achieve. According to the above description, the exposure apparatus 1 〇〇, the control device 20 of the present embodiment can move the wafer stage WST along the lamp plane, and use the surface position measurement system in the movement of the wafer stage WST. The position information of the WST surface of the wafer stage in the Z-axis is orthogonal to the z-axis direction of the plane, and the measurement information is used to measure the information of the XI to a Z read head parallel to the χ γ plane. The in-plane position information (set bit 2) is driven in the x-axis direction and the ^ direction. In this way, the wafer carrier: WST can be driven in the x-axis direction and the 0 y direction to eliminate the position error (self-design value error) caused by the reading head in the plane parallel to the χ γ plane. The WST measures the error in the Z-axis direction and the 0-y direction. Further, according to the exposure apparatus 100 of the present embodiment, the pattern of the reticle is transferred to the wafer stage WST (which is controlled in the above-described manner in the 纟Z-axis direction (and the y direction) with high precision. Each of the irradiation areas of the wafer ww mounted on the wafer stage can be formed with good precision in each of the irradiation areas on the rounding w. The Japanese and Japanese applications of the exposure apparatus i (10) according to the present embodiment are based on prior get on

The result of the focus mapping is that, under the condition that the surface of the wafer w is not exposed during exposure: position information, the focus adjustment control of the wafer is performed with high precision in the scanning exposure using the Z read head, thereby enabling the crystal to be crystallized. A pattern is formed on the circle W with good fine sound. Further, in the present embodiment, since it can be exposed by liquid immersion = degree, it can be transferred onto the wafer W in a fine fine pattern from this point of view. In the above embodiment, in the focus sensor FS of each read head, when the focus servo is performed, the focus is focused on the diffraction grating surface formed by the heart protection Y mark "39Y2". The surface of the cover, but the most J-type will: focus on a surface farther than the surface of the glass cover, such as a dither. As described above, when foreign matter (impurities) such as particles are present on the surface of the cover glass, the surface of the cover glass becomes defocused and the thickness of the glass is less likely to be affected by the foreign matter. u this B

Further, in the above-described embodiment, the wafer P is used as a range in the range of the wafer P (the device is disposed on the outer side (above) of the actual row 3 moving table WTB in the moving range) - the head is each read head Detecting the crystal WTB (Y „39Yl, 80 200916979 Measured system ′′, but the present invention is not limited thereto. For example, instead of the surface position measuring system 1 80 ′, for example, in a moving body (for example, the wafer loading in the above embodiment) The table WST) is provided with a plurality of z read heads, and a detecting means for reflecting the reflecting surface of the detecting beam from the Z head is provided outside the moving body opposed to the two reading heads. Further, in the above embodiment, An encoder system having a configuration in which a lattice portion (χ scale, γ scale) is provided on a wafer stage (wafer stage), and a read head is disposed outside the wafer stage, γ is exemplified. The configuration of the read head is not limited thereto, and an encoder read head may be disposed on the moving body, and a two-dimensional dice (or a two-dimensional dimensional lattice may be disposed outside the moving body opposite to the moving body. ρ ) The encoder system When the head is also disposed on the moving body, the two-dimensional grid (or a two-dimensional one-dimensional grid portion) may be used as a reflecting surface for reflecting the detecting beam from the reading head. " π π Ί 圃 圃 7 斤 示 ( ( ( ( ( ( ( ( ( ( ( ( _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 感 感 _ _ 感 感 感 感 感 感 感The measurement part of the displacement in the direction of the x-axis is the first: the head is not limited to this. That is, the movement of the member of the first reading sensor (for example, the above-mentioned focus sensor, etc.) of the head (the sensing head) is such that the movement of the moving body in the direction of the x-axis causes the member to follow/maintain the i The relationship between the sensor and the measurement pair (for example, the relationship with the light receiving element of the light-receiving element in the first sensor, No. 81 200916979). At this time, the 帛2 sensor measures the moving member from the reference position. Displacement in the moving direction. Of course, when the sensor head is provided on the moving body, the moving member is moved to maintain the i-th sensing according to the position of the moving body in the direction perpendicular to the two-dimensional plane. For example, the above-described two-dimensional lattice (or two-dimensional one-dimensional lattice portion) may be optically positioned in relation to the first sensor. In the above embodiment, the encoder reading is described. Head and z read head systems ('reset separately, but not limited to this, it is also possible to use a read head that has both the function of an encoder read head and a Z read head, or a part of the optical system that is common to the encoder read head and Z read head, or set the encoder read head and the z read head in the same lure Further, in the above embodiment, the lower surface of the nozzle unit 32 is substantially the same as the lower end surface of the projection optical system and the lower end optical element of the first PL, but the present invention is not limited thereto. For example, the lower surface of the nozzle unit 3 2 is disposed closer to the vicinity of the image plane (ie, the wafer) of the projection optical system PL than the exit surface of the front end optical element. That is, the partial liquid immersion device 8 is not limited to the above configuration, for example, It is possible to use the European Patent Application Publication No. 142〇298, the International Publication No. 2〇〇4/〇55803, the International Publication No. 2004/057590, and the International Publication No. 2005/029559 (corresponding to the U.S. Patent Application Publication No. 2006/0231206), International Publication No. 2〇〇4/〇86468 Broken booklet (corresponding to U.S. Patent Application Publication No. 2/5/28,791), U.S. Patent No. 6,952, 253, etc. In addition, as disclosed in the pamphlet of International Publication No. 2004/019128 (corresponding to the specification of U.S. Patent Application Publication No. 2005/0248856), except for the front end light 82 200916979 In addition to the optical path on the image side of the component, the optical path space is also the part of the side of the object surface of the liquid-moon end optical component (at least including the liquid: the liquid film of the front optical component and/or the dissolution preventing function) The surface or all of the surface is formed to have a high lyophilic property and does not require dissolution, although the quartz and the liquid are insoluble to prevent the film. However, it is preferable to form at least the fluorite. In addition, in the above embodiments, ^^#^ Although pure water (water) is used as the liquid, it is also possible to use the liquid as a safe liquid as a liquid, such as a fluorine-based inert liquid. As the fluorine-based inert rt71. For the liquid, for example, it is possible to use flonolina. special

(FlU0rinert, US 3M a ^ w 1 business 0 port name). The fluorine-based inert liquid also has a cooling effect. Further, as the liquid, it is also possible to use a liquid having a higher refractive index than the pure water (refractive index h44), for example, a liquid having a refractive index of Μ or more. A predetermined liquid (organic solvent) or refraction such as isopropyl alcohol having a refractive index of about 5 Å, glycerine having a refractive index of about 1.61, or the like having a bond bond of a bond bond (tetra), burned, heard, and money. Decalin (Decahydr〇naphthalene) or the like having a rate of about 1.60. Alternatively, a liquid of any two or more of the above liquids may be mixed, or at least one of the above liquids may be added (mixed) with pure water. Or 'liquid LQ' may be added to pure water (mixed) bases such as H+, Cs+, κ+, cl-, S〇4, PO42 or acid, etc. Further, it may be added in pure water (mixed) A1 oxide or the like. The liquid can transmit ArF excimer laser light. Further, as a liquid, it is preferable that the absorption coefficient of light is small, the temperature dependency is small, and it is applied to the projection optical system PL and / Or the feeling of the wafer surface 83 200916979 light (Protected or Ge (M + + and a top, in order to F = membrane cloth) or an antireflection film), is preferable.

Oil). Go again, ^ ^ rolling ether oil (Fomblin one, 乍 is a liquid, can also use the illumination light IL · 拼 勒 "" pure water, such as the refractive index of 1.6 ~ 1.8 or so. * * supercritical fluid As a liquid. In addition, projection optics (4) ^ use of components such as quartz (dioxoprite end optical heat, ^ fine / (camp), gasification lock, fluorine, rolling and other fluorinated compounds The single crystal material is formed, and can also be formed by a material having a refractive index higher than that of quartz or fluorite (for example, 1.6 or more). As a material of the above (4) h6 or more, for example, the sapphire and the dioxin disclosed in the booklet of the coffee (4) (1) can be made. For example, Z can be used, for example, in the publication of International Publication No. 5/(59618), potassium (refractive index of about 1.75), etc. In addition, in the above embodiment, the recovered liquid can be reused. The filter (for removing impurities from the recovered liquid) is provided in a liquid recovery device, a recovery tube, etc. Further, in the above embodiment, the case where the exposure device is a liquid immersion type exposure device has been described, but the present invention is not limited thereto. Can also be used without liquid (water) In the above-described embodiment, the present invention is applied to a scanning type exposure apparatus such as a step-and-scan method. However, the present invention is not limited thereto. The invention is applicable to a static exposure apparatus such as a stepper. Further, the present invention is also applicable to a reduced projection exposure apparatus for synthesizing a stepwise engagement manner of an irradiation area and an irradiation area, a proximity mode exposure apparatus, or a mirror projection alignment exposure. Furthermore, the present invention is also applicable to a multi-stage type exposure having a plurality of wafer stages wST as disclosed in, for example, U.S. Patent No. 6,590,634, No. 6,2009, the disclosure of which is incorporated herein by reference. The projection optical system in the exposure apparatus of the above embodiment may be not only a reduction system but also an equal magnification system and an amplification system. The projection optical system PL may be not only a refractive system but also a reflection. Any of the system and the anti-refraction system's projection image can also be either an inverted image or an erect image. The exposure region IA' of the illumination optical system IL that illuminates the illumination light IL includes an on-axis region of the optical axis 内 in the field of view of the projection optical system pL, but may be, for example, as disclosed in International Publication No. 2/4/1-7 Similarly, the so-called in-line type anti-refracting system disclosed in the No. 11 booklet has an exposure area which is an off-axis area not including the optical axis AX, and the on-line type anti-refracting system has a plurality of reflection surfaces and will form at least one intermediate image. The optical system (reflection system or catadioptric system) is provided in a part thereof and has a single optical axis. Further, although the shape of the illumination area and the exposure area are rectangular, the shape is not limited thereto, and may be, for example, an arc or a trapezoid. Or a parallelogram, etc. Further, the light source of the exposure apparatus of the above embodiment is not limited to the ArF excimer laser light source, and a KrF excimer laser light source (output wavelength 248 nm), F2 laser (output wavelength 157 nm), Ai> 2 laser light source such as laser (output wavelength 126nm), Kb laser (rounding wavelength 146nm), or ultra-high pressure mercury lamp emitting g-line (wavelength 436 nm), 匕 line (wavelength 365nm), etc. . Further, a YAG laser harmonic generating device or the like can also be used. In addition, harmonics disclosed in, for example, the pamphlet of International Publication No. 1999/46835 (corresponding to the specification of U.S. Patent No. 7,023,610), which is an optical fiber coated with 85 200916979 (or both 铒 and 镱), may be used. The amplifier amplifies the single-wavelength laser light from the infrared region or the visible region of the semiconductor laser, or the 隹Φ, as vacuum ultraviolet light, and converts the wavelength into ultraviolet light by nonlinear optical crystallization. Further, in the above-described embodiment, the illumination light used as the exposure device is not limited to light having a wavelength greater than 10 nm, and light having a wavelength less than i 〇〇 nm may be used. For example, in recent years, in order to expose 7 〇 nm In the following patterns, an EUV exposure apparatus has been developed which uses Es (R) or plasma laser as a light source to generate EUV (Extreme ItraViolet) light in a soft X-ray region (for example, a wavelength range of 5 to 15 nm). And a king reflection reduction optical system and a reflective reticle designed according to its exposure wavelength (for example, i3 5 nm) are used. Since the apparatus uses a circular arc illumination to synchronously scan the reticle and the wafer for scanning exposure, the present invention is suitably applied to the above apparatus. Further, the present invention is also applicable to an exposure apparatus using charged particle beams such as an electron beam or an ion beam. Further, in the above-described embodiment, a light-transmitting mask (a reticle) in which a predetermined light-shielding pattern (or a phase pattern, a light-reducing pattern) is formed on a substrate having light transparency is used, but for example, US Patent No. An optical mask disclosed in the specification of No. 6,778,257, which is also called a variable-shaping mask, a active mask, or an image generator, for example, includes a non-light-emitting image display element (space light tone) A DMD (Digital Micr〇-mirror Device) or the like is a transmission pattern, a reflection pattern, or a light-emitting pattern according to an electronic material of an image to be exposed. Moreover, the present invention is also applicable to, for example, the formation of interference fringes on a wafer, as disclosed in the specification of International Publication No. 2/1/35168 86 200916979.

Light comes to one of the wafers on the wafer, and the exposure device (the lithography system) on the wafer. The present invention can be applied to, for example, the exposure apparatus disclosed in U.S. Patent No. 2, which is to synthesize two reticle systems on a wafer, and to perform double exposure at substantially the same time by scanning one exposure area. Further, the apparatus for forming a pattern on an object is not limited to the above-described exposure apparatus (lithography system). The present invention can also be applied to an apparatus for forming a pattern on an object by an ink jet type. Further, in the above embodiment, the object to be patterned (the object to be exposed by the energy beam) is not limited to the wafer, and may be another object such as a glass plate, a ceramic substrate, a film member, or a mask substrate. The use of the exposure apparatus is not limited to the exposure apparatus for semiconductor manufacturing, and can be widely applied to, for example, an exposure apparatus for liquid crystal for transferring a liquid crystal display element pattern to a square glass plate, or manufacturing an organic EL, a thin film magnetic head, and photography. An exposure device such as a component (CCD or the like), a micromachine, or a DNA wafer. Further, in addition to manufacturing micro components such as semiconductor elements, it is also possible to manufacture a reticle or a photomask for a photo-exposure device, an EUV (ultraviolet ultraviolet ray) exposure device, an X-ray exposure device, and an electron ray exposure device. The invention is applicable to an exposure apparatus for transferring a circuit pattern to a glass substrate, a germanium wafer or the like. Further, the moving body drive system and the moving body driving method of the present invention are not limited to the exposure apparatus, and can be widely applied to other substrate processing apparatuses (for example, laser repair apparatuses, substrate inspection apparatuses, and the like), or other precision machines 87. In 200916, the sample positioning device and the wire bonding device in the machine include a moving body such as a stage that moves in a two-dimensional plane. Further, all the publications (instructions), the international publication pamphlets, the U.S. Patent Application Publications, and the U.S. Patent Application, which are incorporated herein by reference, are incorporated herein by reference. The semiconductor device is manufactured by the following steps: a step of performing a function (a function of performance, a design of a performance, a process of fabricating a wafer from a germanium material), and an exposure apparatus (pattern forming apparatus) according to the above embodiment. The reticle step of transferring the pattern of the reticle (mask) onto the wafer, the developing step of exposing the exposed wafer, the etching step of removing the exposed portion of the portion other than the photoresist remaining portion by etching, and the end of the removal a photoresist removal step, a component assembly step (including a dicing step, a bonding step, a packaging step), an inspection step, etc., which are not required for etching after etching. Since the component manufacturing method of the present embodiment described above is used, it is exposed In the step, since the exposure apparatus (pattern forming apparatus) and the exposure method (pattern forming method) of the above-described embodiment are used, it is possible to perform high-capacity exposure while maintaining high overlap precision. Accordingly, it is possible to increase the high product of the fine pattern. Productivity of the micro-components of the body. As described above, the mobile body drive system and the mobile body of the present invention The driving method is adapted to drive the moving body in the moving surface. Further, the pattern forming device and the pattern forming method of the present invention are suitable for forming a pattern on an object. Further, the exposure method and the exposure device, and the device manufacturing method are suitable. In addition, the measuring method of the present invention is suitable for measuring the position of the sensor read head provided by the position measuring system. The position measuring system of the present invention is suitable for measuring the substantial edge. Positional information of a moving body moving in a two-dimensional plane. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic block diagram showing an exposure apparatus according to an embodiment. Fig. 2' is a plan view showing a stage device of Fig. i. 'A top view showing the arrangement of various measuring devices (such as an editing machine, an alignment system, a multi-point AF system, and a z-head) provided in the exposure apparatus of Fig. 1. Fig. 4(A) ' shows a plan view of the wafer stage WST Fig. 4(B) is a schematic side view showing a section of a portion of the wafer stage WST. Fig. 5(A) shows a plan view of the measurement stage MST, and Fig. 5(B) shows the measurement stage. One part of MST Fig. 6 is a block diagram showing a configuration of a control system of an exposure apparatus according to an embodiment. Fig. 7 is a view schematically showing an example of a configuration of a z-head. Fig. 8(A) shows a composition of a focus sensor. FIG. 8(B) and FIG. 8(C) are diagrams for explaining the shape and function of the cylindrical lens of FIG. 8(A). FIG. 9(A) shows the detection area of the four-divided light-receiving element. The divided state diagrams [Fig. 9 (B), Fig. 9 (C), and Fig. 9 (D) show the cross-sectional shape of the reflected beam 1B2 on the detection surface in the front focus state, the imaginary focus state, and the back focus state, respectively. 10(A) to 10(c) are diagrams for explaining focus mapping by an exposure apparatus according to an embodiment. Figs. 11(A) and 11(b) are for explaining Exposure of an embodiment 89 200916979 A diagram of focus correction by a device. Fig. 12 (A) and Fig. 12 (B)' are views for explaining offset correction between AF sensors by an exposure apparatus according to an embodiment. Fig. 13' is a view showing the state of the wafer stage and the measurement stage in the state in which the wafer on the wafer stage is subjected to the step-and-scan method. Figure 14 shows the state of the two stages when the wafer is unloaded (when the measurement stage arrives at the position where BCHK (time interval) will be reached). (Figure 15 shows the state of the two stages when the wafer is loaded. Figure 16 shows the switch from the stage feeding control of the interferometer to the servo control of the encoder (the wafer stage moves to the aforementioned pri). - the state of the two stages when the position of the previous half is processed. Figure 17, is the wafer stage when the alignment marks AL1, AL22, AL23 are used to simultaneously attach the alignment marks of the three-time alignment illumination areas. The disk measures the state of the stage. '

Fig. 18 shows the state of the wafer stage and the measurement stage when the first half of the focus correction is performed. The figure is the state of the disk measurement stage when the alignment marks attached to the five secondary alignment illumination areas are simultaneously detected using the alignment system AL1. σ 〃 Fig. 20 shows the state of the wafer stage and the measurement stage when at least one of the processing of the second half of #Pd_BCHK and the processing of the focus correction is performed. , AL2!~ AL24' to simultaneously check the alignment mark when the wafer is mounted on the wafer. Figure 21 shows the state of the measurement stage attached to the five cubic alignment illumination areas using the alignment system AL1. 90 200916979 Figure 22 shows the state of the wafer stage and the measurement stage when the alignment marks attached to the three four-time alignment illumination areas are simultaneously detected using the alignment systems al1, AL22, and al23. Figure 23 shows the state of the wafer stage and the measurement stage at the end of the unfocused mapping. Figs. 24(A) and 24(B) are views for explaining a method of calculating the Z position and the tilt amount of the wafer stage WST using the measurement results of the z read head. f' Figs. 25(A) and 25(B)' are views for explaining a positioning pattern of a diffraction grating plate provided for measuring the position of the Z read head. Fig. 26(A) to Fig. 26(C) are diagrams for measuring the position of the Z read head using the positioning pattern of the diffraction grating plate. [Main component symbol description] 5 Liquid supply device 6 Liquid recovery device 8 Local liquid immersion device 10 Illumination system 11 Marker stage drive system 12 Base 14 Liquid immersion area 15 Moving mirror 16, 18 γ interferometer 17a, 17b, 19a 19b Reflecting surface 20 Main control unit 28 Plate 91 200916979 28a 1st liquid-repellent area 28b 2nd liquid-repellent area 30 Measuring plate 3 1A Liquid supply pipe 3 IB Liquid recovery pipe 32 Mouth unit 34 Memory 36 Housing 37, 38 Grid line 39Xi, 39X2 X scale 39Y1; 39Y2 Y scale 40 /r/r Mirror 41 moving mirror 41a, 41b, 41c Reflecting surface 43A, 43B Z interferometer 44 Light receiving system 45 Space image measuring device 46 FD rods 47A, 48B fixed Mirror 50 stage device 52 reference grid 54 support member 5 61 ~ 4 arm 5 8 i ~ 4 vacuum pad 92 200916979

6 0 1 to 4 rotary drive mechanisms 62A to 62F read head units 64i to 645, 65i to 65, Y read head 64a illumination system 64b optical system 64c light receiving system 661 to 6 X read heads 70A, 70E2, 70F2 Υ linear code 70B X Linear encoder 70E, 70F Υ Axis encoders 72a to 72d Ζ read head 74!~743, 763 765 Ζ read head 90a illumination system 90b light receiving system 91, 92 stage body 94 illuminance unevenness sensor 96 space image Measuring device 98 wavefront aberration measuring device 99 sensor group 100 exposure device 116 reticle interferometer 118 interferometer system 120 target value calculation output unit 121 interferometer/head reading head output conversion unit 93 200916979 124 stage drive system 126 , 127, 128 X Interferometer 150 Encoder System 170 Signal Processing / Selection Device 180 Surface Position Measurement System 191 Front End Lens 200 Measurement System AL1 f 'One Alignment System Secondary Alignment System AS Irradiation Area AX Optical Axis B1 ~ B7 From beam B 41, B 4 2, B 5 1, B 5 2 Ranging beam CL, LL Center line Enc1~Enc4 Encoding Is FM ί Reference mark 曝光 Exposure area IAR Illumination area IL Light L2a, L2b lens LB laser beam L B i, L B 2 of the semiconductor laser beam LD loading position LP 94,200,916,979

Lq liquid LH, LV linear LW center axis M mask MTB measuring station MST measuring stage 0 rotating center PBS .... polarizing beam splitter \ PL projection optical system PU projection unit R marking line R1 a, Rib, R2a, R2b Mirror RG Reflective Diffraction Grating RST Marker Stage SL Space Image Measurement Slit Pattern UP / Unload Position W Wafer WPla, WPlb λ /4 Board WTB Wafer Table WST Wafer Stage 95

Claims (1)

200916979 X. Patent application: 1. A mobile body driving method, which basically drives a mobile body along a plane of two planes, characterized in that it comprises: f-, Driving step 'moves the moving body in a predetermined direction parallel to the two-dimensional plane' and in the movement of the moving body, using the plurality of sensor reading heads of the position measuring system to measure the moving body is orthogonal to the The position information of the direction of the two-dimensional plane 'according to the measurement information and the measurement for the information to the position of the sensor 3 selling head in a plane parallel to the two-dimensional plane. And tying the mobile body to at least an oblique direction with respect to the two-dimensional plane. 2. The mobile body driving method according to claim 1, wherein in the driving step, the moving component is further driven according to an error component read by each sensor used in the measurement of the measurement information. The direction of inclination relative to the two-dimensional plane. A mobile body driving method according to item ith or item 2 of the patent, wherein the step further comprises the step of measuring the position information of the sensor head in the plane before the driving step. 4. The mobile body driving method according to item 3 of the patent scope, wherein the step of j = includes the first! Read head position measurement steps Xiao Di! The read head position '1 step is to move the moving body in the two-dimensional plane to make the mobile body pass the sense corresponding to the sensor reading head of the system. The detection area of the detector, and according to the value of the position information used to measure the position of the multi-movement in the first direction, and the corresponding value of the measurement according to the access ▲ 1 T m (4) The remaining amount of salt, B, corresponds to the detection signal of the sensor, and calculates the position of the reader head in the ith direction. 96 200916979 5. For example, the mobile body driving method of the fourth paragraph of the patent scope of the patent scope, the measurement of the Jin, and the moving body driving method, wherein the step further comprises the second reading head position measuring step: 2: a second direction orthogonal to the i direction: moving in the -dimensional plane and the first domain, the JUMT HU moving body passes the detection area of the sensor according to the movement obtained in the movement to measure the moving body In the position of the f-square, the measurement value of the 帛2 measurement of the dynasty, the value corresponding to the detection of the sensor / ... the position of the summer direction. a different "sensing read head in the second. 6. The mobile body driving method sensor reading head according to item 5 of the patent application scope is disposed outside the mobile body; in the eighth, the detection area of the sensor, The mobile body domain and the second measurement area are included. ', measurement area 7. Mobile body drive method according to item 6 of the patent application scope The second measurement area includes a second direction positioning pattern. . In the mobile body driving method of the item range, the at least part of the field 5 is common to the second measurement area, and the first and second direction maps t are included in the common part. The moving body driving side of the method of the fourth aspect of the invention is provided on the outside of the moving body; the detecting area of the sensor includes the first direction Positioning pattern. 10. A method of forming a pattern, comprising: loading an object on a .VI· && I β to fight on a moving body on which the moving surface moves and forming a pattern for the object; The step of driving the moving body by the mobile body driving method of the worker in the patent range 1st to 9 97 200916979 is in use. 11. A method of manufacturing a device comprising a pattern forming step, characterized in that: in the step of forming a pattern of a pattern, a pattern forming method of the object of claim 1G is used to form a pattern on a substrate. 12. An exposure method for forming a pattern on an object by irradiation of an energy beam, wherein: the moving body driving method for driving the object is driven by the moving body driving method of any one of claims 1 to 9. The energy beam is moved relative to the object. 13. A measuring method for measuring a position of a position measuring system for measuring a position of a moving body in a direction orthogonal to a two-dimensional plane, the head of the sensor 3 being parallel to the plane of the two-dimensional plane Position information, the measurement position measurement system is a positional information of a moving body moving substantially along a two-dimensional plane in an oblique direction with respect to the two-dimensional plane, wherein the measurement method comprises: a first read head position The measuring step is configured to move the moving body in a first direction in the two-dimensional plane to pass the moving body through a detection area of the sensor corresponding to the sigma sensor read head of the position measuring system, and according to a measured value of the first measuring device that is separately provided from the position measuring system and configured to measure position information of the moving body in the first direction, and the sensor corresponding to the measured value The detection signal is calculated, and the position of the sensor read head in the first direction is calculated. 14. The measuring method of claim 13 further comprising 98 200916979 second read head position measuring step 'moving the moving body in a second direction orthogonal to the first direction in the plane of the second plane Passing the moving body through the detection area of the sensor, and measuring the measured value of the second measuring device obtained by measuring the position information of the moving body in the second direction, and the measured value Corresponding to the detection signal of the sensor, the position of the sensor read head in the second direction is calculated. 15. The measuring method of claim 14, wherein the sensing head is disposed outside the moving body; the detecting area of the sensor includes the first measuring tooth domain and the first 2 measurement area. 1 . The measuring method according to claim 15 , wherein the second rigid region includes a second direction positioning pattern. 17. The measuring method according to claim 15 or 16, wherein at least a portion of the first measurement region is common to the second measurement region, and the common portion includes the second and second direction positioning patterns. The method of measuring the method of any one of claims 13 to 17, wherein the sensor read head is disposed outside the mobile body; the detection area of the 5th sensor includes the first Directional positioning pattern. 1 . A moving body drive system that substantially drives a moving body along a two-dimensional plane, characterized in that: the position measuring system 'has a two-dimensional arrangement in a plane parallel to the two-dimensional plane for measuring the a plurality of sensor read heads of the mobile body in positional information in a direction orthogonal to the two-dimensional plane; and a driving means for moving the moving body in a direction parallel to the two-dimensional plane of the predetermined 99 200916979: and in the During the movement of the moving body, M is used to measure the position information of the moving body in the direction orthogonal to the two-dimensional plane by using a plurality of sensor reading heads of the position measuring system, according to the measurement information and the measurement for the information. One less sensor read head is positioned to drive the moving body in an oblique direction with respect to the two-dimensional plane at a position parallel to the plane of the two-dimensional plane. 20. The mobile body drive system according to claim 19, wherein: the driving device is based on the sense of the measurement for the measurement information: the error component when the head is read, (4) the moving body Driving in a direction orthogonal to the plane of the dimension and an oblique direction with respect to the two-dimensional plane: 21. A pattern forming apparatus comprising: loading an object and protecting the Maza μ 2 , μ object > σ moving surface movement The moving body; and the mobile body driving system of claim 20 or 20 for driving the moving body to form a pattern for the object. 22. An exposure apparatus object, comprising: <moving a patterning device that forms a pattern on the object by irradiating the object with the irradiation of the beam; and moving the patent scope] Q+, or 20 The body drive system: drives the slave to move the energy beam relative to the object by the mobile body drive system. The moving amount system is a position measurement system that measures the movement of the mobile body substantially along a two-dimensional plane, and features In the case of 'having: a plurality of sensor read heads' are disposed at a plurality of positions opposite to the two-dimensional plane, and opposite to the moving body substantially moving along the dimension dry surface, producing 100 200916979 The two-dimensional plane is output; the output corresponding to the position of the direction of the 乂 is output from at least one of the plurality of sensing heads, and the head is in the two-dimensional : Set the relevant information of the position, and detect the tilt information of the == plane of the moving body. The position measuring system of the patent application _23 is prepared: for measuring the i-th side of the moving body in the two-dimensional plane The first measuring device of the position of the first position; the information about the setting position of the sensible measuring head is the first of the moving body when the sensing is generated by the head The position information is obtained. ^ If the scope of the patent application is 24, the position measurement system and system are further provided, and the device is separately set separately from the sensor read head to measure the mobile body. The second position information in the second direction perpendicular to the second direction in the two-dimensional plane; (4) (4) information on the position of the read head, which is the second of the moving body when the output is generated by the sensing read head The position measurement system of any one of claims 23 to 25, wherein the plurality of sensor read heads are disposed in a plane parallel to the predetermined two-dimensional plane In two dimensions. Eleven, circle as the next page 101