TW200916607A - Corrosion inhibitors or strippers containing substituted ketones or derivatives thereof and process for production of the same - Google Patents
Corrosion inhibitors or strippers containing substituted ketones or derivatives thereof and process for production of the same Download PDFInfo
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- TW200916607A TW200916607A TW097135967A TW97135967A TW200916607A TW 200916607 A TW200916607 A TW 200916607A TW 097135967 A TW097135967 A TW 097135967A TW 97135967 A TW97135967 A TW 97135967A TW 200916607 A TW200916607 A TW 200916607A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F11/00—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent
- C23F11/08—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids
- C23F11/10—Inhibiting corrosion of metallic material by applying inhibitors to the surface in danger of corrosion or adding them to the corrosive agent in other liquids using organic inhibitors
- C23F11/12—Oxygen-containing compounds
- C23F11/122—Alcohols; Aldehydes; Ketones
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
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- H10P50/287—
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- H10P70/273—
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- Mechanical Engineering (AREA)
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- Organic Chemistry (AREA)
- Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
- Preventing Corrosion Or Incrustation Of Metals (AREA)
Abstract
Description
200916607 九、發明說明: H 明卢斤屬椅冷貝3 技術領域 本發明關於一種含有取代酮化合物或其衍生物之防I虫 5劑及可由該防蝕劑調製出之防蝕處理液或防蝕保存液,該 取代酮化合物係一種對銅等之易腐蝕金屬亦可發揮高防蝕 效果之化合物。此外,本發明之防蝕劑、防蝕處理液或防 姓保存液亦具有可依需要而容易地從廢液中回收所含取代 酮化合物或其衍生物的優異特徵。 0 本發明更關於一種具有防蝕性能之光阻剝離劑或可由 該剝離劑調製出之光阻剝離液,其含有該化合物與具有光 阻剝離性能之化合物。 背景技術 15 糊而言’銅、料該等之合金被廣泛用在形成有電200916607 IX. Description of the invention: H. The invention relates to an anti-Ivory 5 agent containing a substituted ketone compound or a derivative thereof, and an anti-corrosion treatment liquid or an anti-corrosion preservation solution which can be prepared by the anti-corrosion agent The substituted ketone compound is a compound which exhibits a high anticorrosive effect on a corrosive metal such as copper. Further, the corrosion inhibitor, the anticorrosive treatment liquid or the antipreservation solution of the present invention has an excellent feature of easily recovering the substituted ketone compound or a derivative thereof from the waste liquid as needed. The present invention further relates to a photoresist release agent having corrosion resistance or a photoresist release liquid which can be prepared from the release agent, which contains the compound and a compound having photoresist peeling properties. BACKGROUND OF THE INVENTION 15 pastes, 'copper, such alloys are widely used in forming electricity
路且材質為石夕等之晶圓、印刷電路基板及液晶材料等之製 程中的金屬膜及金屬電路等。 此種金屬膜及金屬配線之素材中,舉例來說,銅且有 抗電移性優良且低電阻等優點,值相對地也具有易氧化且 2〇 易腐餘之性質。 、、㈣路之腐餘會使電路之電阻上昇, 為了防止此種現象,可用於夂插+ _ 、種电路之形成步驟(特別是半 導體積體電路上之金屬膜及金屬 , ,屬電路之形成步驟)的防姓 技術在近年來受到重視。因此 防蝕劑本身亦被要求在各 5 200916607 種製程及使用條件下需具有充分之防蝕效果。舉例而言, 如製作印刷電路基板作成時之光阻剝離步驟,其在金屬膜 上以乾蝕法等形成通孔後,於剝離去除蝕刻殘渣等之步驟 中同時防止所形成之新金屬電路(特別是銅電路)腐蝕仍是 5 重要的技術課題。 迄今,舉例來說,使用配合有具防蝕性能之化合物的 光阻剝離劑’已被作為上述課題之改善方策來進行。 顯示此種防姓性能之化合物中,舉例來說,有機化合 物如羥基苯甲酸等芳香族羥基化合物、乙酸、檸檬酸及琥 10珀酸等含羧基之有機化合物以及笨并三唑(BTA)類等被使 用迄今(例如,參照專利文獻〗)。其中,已知苯并三唑與金 屬具有強烈配位性而具有非常優異之防蝕性能,舉例來 說’已有報告指出其用於化學性機械研磨(Chemical Mechanical Polishing : CMP)製程等(如參照專利文獻2及專 15 利文獻3)。 然而’由於近年來減低環境負擔之志向提高,亦逐漸 對於工廠之廢液、廢棄物要求化學安全性及減低排出量。 特別是,CMP製程將產生大量廢液,而必須對於上述要求 作充分考量。 20 舉例來說,上述廢液處理方法以可由廢液蒸餾及分液 而離析、回收或可藉分解菌及處理菌等之微生物作生分解 處理為佳’但已知前述苯并三唑及其衍生物難以從廢液回 收且難以生分解處理,現狀仍是不得不依賴繁雜且耗費成 本之處理方法。 200916607 另一方面’舉例來說,將前述芳香族羥基化合物及含 羧基之有機化合物用作半導體裝置製程之防蝕劑時,有時 可從排出之廢液及廢棄物中藉由分液、抽提或蒸餾等方法 而離析喊’若能將其再利用冑可大幅減⑽棄物量及防 5蝕劑用量。即,與難以從廢液處理回收之苯并三唑相較下, 此種循壤使用在減輕環境負擔之面上可說是具有很大的優 然而,相反地,即使從習知之具防祕能的芳香族經 基化合物或具有幾基等之有機化合物調製出光阻剝離劑並 1〇同樣地用於製程中,對於銅等腐敍性強之金屬,其 果難謂充足。 (專利文獻1)日本特開平Μ3·5號公報 (專利文獻2)日本特開平Μ3·號公報 (專利文獻3)日本特開平u韻7〇9號公報 15 【曰月内】 20 劑或=::::提供;種可從廢-— 剝離劑=:::::供一種具有防純能之光阻 劑含有該陶及具光叫光阻_ 本案毛明人為達成上述目的而不斷研究,結果發現式 7 200916607 (Al)、式(B1)及式(Cl)所示取代酮化合物及/或其衍生物對 於銅、鋁或該等之合金所構成之金屬膜、金屬電路或含有 该專金屬之物品的腐餘具有優異之防姓效果,終至完成本 發明。The material is a metal film or a metal circuit in a process such as a wafer, a printed circuit board, or a liquid crystal material. Among the materials of the metal film and the metal wiring, for example, copper has an excellent resistance to electromigration and a low electrical resistance, and the value is relatively easy to oxidize and has a property of being perishable. , (4) The corrosion of the circuit will increase the resistance of the circuit. In order to prevent this phenomenon, it can be used for the insertion of + _, the formation of the circuit (especially the metal film and metal on the semiconductor integrated circuit, which belongs to the circuit) The anti-surname technology that forms the step) has received attention in recent years. Therefore, the corrosion inhibitor itself is required to have sufficient corrosion resistance under the various processes and conditions of use. For example, in the photo-resistive peeling step in the case of producing a printed circuit board, after the through-hole is formed by dry etching or the like on the metal film, the new metal circuit formed is simultaneously prevented in the step of removing the etching residue or the like ( In particular, copper circuits) corrosion is still an important technical issue. Heretofore, the use of a photoresist release agent having a compound having an anticorrosive property has been used as an improvement method of the above problems. Among the compounds exhibiting such anti-surname properties, for example, organic compounds such as aromatic hydroxy compounds such as hydroxybenzoic acid, carboxyl group-containing organic compounds such as acetic acid, citric acid, and succinic acid, and benzotriazole (BTA) Etc. has been used so far (for example, refer to the patent literature). Among them, benzotriazole is known to have strong coordination with metals and has excellent corrosion resistance. For example, 'there are reports that it is used in chemical mechanical polishing (CMP) processes, etc. Patent Document 2 and Patent Document 3). However, due to the increased ambition to reduce the environmental burden in recent years, chemical safety and waste reduction have been required for the waste liquid and waste of the factory. In particular, the CMP process will produce a large amount of waste liquid, which must be fully considered. 20 For example, the above-mentioned waste liquid treatment method is preferably isolated and recovered by distillation and liquid separation of waste liquid, or may be decomposed by microorganisms such as decomposing bacteria and treating bacteria, but the aforementioned benzotriazole and the like are known. Derivatives are difficult to recover from waste liquids and are difficult to biodegrade, and the current situation still has to rely on complicated and costly treatment methods. 200916607 On the other hand, for example, when the aromatic hydroxy compound and the carboxyl group-containing organic compound are used as an anticorrosive agent for a semiconductor device process, they may be separated and discharged from the discharged waste liquid and waste. Or distillation and other methods to isolate the shouting 'If you can reuse it, you can greatly reduce (10) the amount of discarded material and the amount of anti-corrosion agent. That is, compared with benzotriazole which is difficult to recover from waste liquid treatment, such soil use can be said to be excellent in reducing the environmental burden. On the contrary, even from the conventional anti-mystery An aromatic radical-based compound or an organic compound having a few groups or the like prepares a photoresist stripper and is similarly used in a process, and it is difficult to be sufficient for a metal such as copper which is highly venomous. (Patent Document 1) Japanese Laid-Open Patent Publication No. Hei. No. 3 (Patent Document 2) Japanese Laid-Open Patent Publication No. 3 (Patent Document 3) Japanese Patent Laid-Open No. 7〇9 Bulletin 15 [In the month of the month] 20 doses or = ::::provided; can be used from waste - stripping agent =::::: for a kind of photoresist with anti-pure energy containing the pottery and light called photoresist - the case Mao Ming people continue to study for the above purpose As a result, it was found that a substituted ketone compound represented by Formula 7 200916607 (Al), Formula (B1) and Formula (Cl) and/or a derivative thereof is a metal film, a metal circuit or the like which is composed of copper, aluminum or the like. The rot of the special metal article has an excellent anti-surname effect, and the present invention is finally completed.
式中,R1為可任擇具有取代基之烴基;R2&R3為氫原 子、画素原子或可任擇具有取代基之烴基;R2可任擇地與 R3結合而形成4至6員環之環狀結構;此外,R5為可任擇具 10 有取代基之烴基。Wherein R1 is a hydrocarbon group optionally having a substituent; R2&R3 is a hydrogen atom, a pixel atom or an optionally substituted hydrocarbon group; and R2 may optionally be bonded to R3 to form a ring of 4 to 6 membered rings. Further, R5 is a hydrocarbon group optionally having 10 substituents.
式中’ R1為可任擇具有取代基之烴基;R2及R3為氫原 子、鹵素原子或可任擇具有取代基之烴基;此外,R2可任 15擇地與R3結合而形成3至6員環之環狀構造;R6為氫原子或 可任擇具有取代基之煙基;n=2~6之整數。 〈化3>Wherein R 1 is an optionally substituted hydrocarbon group; R 2 and R 3 are a hydrogen atom, a halogen atom or an optionally substituted hydrocarbon group; further, R 2 may be bonded to R 3 to form 3 to 6 members. a cyclic structure of a ring; R6 is a hydrogen atom or a nicotinyl group optionally having a substituent; n = an integer of 2-6. <化3>
(C1) R6 式中’ R1為可任擇具有取代基之烴基;R2為氫原子、 2〇鹵素原子或可任意具有取代基之烴基;此外,R6為氫原子 或可任擇具有取代基之烴基。 舉例來說,本發明之式(1)所示取代酮化合物及其衍生 200916607 物在處理如半導體積體電路或印刷電路基板等所用之銅、 鋁或該等之合金所構成之金屬膜金屬電路或構成成份中 有銅及鋁中之1種以上的物品時,顯示出優異之防蝕效果。 因此,該化合物適宜用作防蝕劑及使用其之防蝕處理液以 5 及防蝕保存液。 此外’舉例來說’本發明之取代酮化合物及其衍生物 可藉由與烷醇胺(如2-胺基乙醇等)等具有光阻剝離性能的 化合物混合’而調製出兼具防蝕性能與光阻剝離性能之光 阻剝離劑,更可調製出使用其之光阻剝離液;例如,於製 1〇作印刷電路基板時用於光阻剝離步驟中,藉此可赋予新製 成之金屬膜或金屬電路優異之防蝕效果。 【實施方式】 本發明之最佳實施形態 <態樣A:万-i同基酯化合物> 15 顯示防姓效果之本發明取代酮化合物的衍生物可列舉 如下述式(A1)所示之卢_酮基酯化合物。 〈化4> R1>^^or5 (A1) 式中’ Rl為可任擇具有取代基之烴基;R2及R3為氫原 2〇子、_素原子、可任擇具有取代基之烴基;R2可任擇地與 R結合而形成4至6員環之環狀結構;此外,R5為可任擇具 有取代基之烴基。 上述式中,R1為可任擇具有取代基之烴基。 R1中之烴基可列舉如:甲基、乙基、丙基、丁基、戊 9 200916607 基及己基等碳原子數1〜丨2之直鏈狀烷基或碳原子數3〜12之 分枝鏈狀燒基、環戊基、環己基及環庚基等礙原子數3〜12 之環烷基、乙烯基、烯丙基及丙烯基等碳原子數2〜1〇之直 鏈狀烯基、異丙烯基、異戊浠基(isoprenyl)及香葉草基 5 (geranyl)等碳原子數3〜12之分枝狀烯基、環戊烯基、環2 烯基及環戊烯基等碳原子數3〜12之環烯基、及乙炔基及炔 丙基(propargyl)等碳原子數2〜9之炔基等之脂肪族基;苄基 等碳原子數7〜18之芳香脂肪族基(芳烷基);以及笨基、聯笨 基及萘基等芳香族基。此外,該等基包含各種異構物。 10 命述烴基可任擇地具有取代基。取代基可列舉如氟原 子及氣原子等商素原子、羥基、羧酸基、磺酸基、硝基、 氰基及二甲胺基等碳原子數丨〜6之二烷基胺基、甲氧基等碳 原子數1〜6之烷氧基、乙醯基等與前述烷基結合而形成羰基 之側氧基、甲氧羰基等碳原子數^6之烷氧羰基、碳原子數 15 1〜6之烧石買醯基及甲硫基等碳原子數1〜6之烧硫基。此外, 該等取代基相對於烴基亦可具有丨個以上,但若慮及脂溶性 與水溶性之平衡’則式(A1)化合物之總碳原子數以不超過 36之範圍為佳。 R1之煙基宜為前述直鏈狀烷基、分枝狀烷基以及環烷 20基、前述炔基、前記芳烷、苯基及萘基,更宜為碳原子數 1〜6之直鏈狀烷基、碳原子數3〜6之分枝狀烷基以及環烷 基、乙炔基、炔丙基、苄基、苯基及萘基。 此外’ R1之烴基可任擇地具有取代基。Ri之取代基宜 為鹵素原子、羥基、前述烷氧基、前述二烷基胺基、前述 200916607 烷磺醯基、前述側氧基及前述烷氧羰基,更宜為氟原子、 氣原子、羥基、曱氧基、二甲基胺基、甲磺醯基、2_側氧 基丙基及ι-(曱氧羰基)甲基。 此外,R1可任擇地與R2或R3結合而形成3至6員環之環 5狀結構。式(A1)所示化合物中,此種化合物可列舉如2-環己 酮羧酸乙酯等。 式中,R2及R3為氫原子、鹵素原子或可任擇具有取代 基之烴基。此外,R2及R3中烴基之取代基與前述…同義。 此外,R2可任擇與R3結合而形成如三員環(環丙基)、六員 10環(環己基)般之3至6員環的環狀結構。 R2及R3之烴基宜為氫原子、氟原子、前述直鏈狀院 基、分枝狀烷基以及環烷基、前述炔基、前述芳烷基、苯 基、萘基及結合R2與R3之環丙基、環丁基、環戊基以及環 己基。 15 前述者中,R2及R3更宜為氫原手、氟原子、碳原子數 1〜4之直鏈狀烷基、碳原子數3~4之分枝狀及環狀的烷基、 乙炔基、炔丙基、苄基、苯基、萘基及結合R2與R3之環丙 基、環丁基、環戊基及環己基,且以氫原子、甲基、乙基、 苄基及結合R2與R3之環丙基、環丁基為佳。 20 再者,r2&r3之烴基可任擇具有取代基。R3及R4之取 代基宜為素原子、羥基、前述烷氧基、前述二烷基胺基、 前述烷磺醯基、前述側氧基以及前述烷氧羰基’更宜為氟 原子、氣原子、羥基、甲氧基、二甲基胺基、甲磺醯基、 2-側氧基丙基、甲氧羰基曱基。 11 200916607 式中R為與R1同義之烴基。 前述者中,R5宜為脂肪族基及苯基,更宜為碳原子數 1〜6之烷基及笨基。 本發明之式(A1)邱一 〇 « 斤不/3 -酮基酯化合物可直接使用市 售 卜未有市售品者則可如日本特開2000-143590號 公報製造^酮基酿化合物。再者,亦可依需要而進行該万 晒基酉曰化口物之2位修飾。例如,可參照Buii ρη’。1.62 4G72(1989)等而製得該3_酮基自旨化合物之 2位修飾化合物。 10 如上述’可用作本發明防飾劑之式(A1)所示;S—嗣基 酯化合物可列舉如下述者。 3-側氧基-丁酸酯、3_側氧基_戊酸酯、3_側氧基-己酸 S曰、3-側氧基-庚酸酯、3_側氧基辛酸酯、3_側氧基-壬酸酯、 3-側氧基-癸酸酯、3_側氧基_十_酸酯、3_側氧基_十二酸 15 §曰,3_苯基側氧基-丙酸酯、4-苯基-3-側氧基-丁酸酯、 3-萘基-3-側氧基_丙酸酯、4_萘基_3_側氧基_ 丁酸酯;2_甲基 冬側氧基-丁酸s旨、2_甲基_3_苯基_3側氧基丙酸醋、2_甲 基-4-苯基-3-側氧基_丁酸酯、2,2_二曱基_3_側氧基-丁酸 酯、3-苯基-2, 2-二甲基·3_側氧基—丙酸酯、2, 2_二甲基_4_ 20苯基-3-側氧基_ 丁酸醋、2_节基冬側氧基_丁酸醋、2_节基冬 苯基-3-侧氧基_丙酸酯、2_苄基_4_苯基_3側氧基-丁酸酯、 2, 2-二节基-3-側氧基_丁酸酷、2, 2_二节基各苯基冬側氧基 -丙酸酯、2, 2-二苄基_4-苯基_3_側氧基_丁酸酯;3_(2_羥基 苯基)-3-側氧基_丙酸酯、4-(2_羥基苯基)_3_側氧基-丁酸 12 200916607 酯、2-甲基-3-(2-羥基苯基)-3-側氧基-丙酸酯、2-曱基-4-(2-羥基苯基)-3-丁酸酯、2-苄基-3-(2-羥基苯基)-3-側氧基-丙酸 酯、2-苄基-4-(2-羥基苯基)-3-側氧基-丁酸酯;3-(3,4-二羥 基苯基)-3-側氧基-丙酸酯、4-(3, 4-二羥基苯基)-3-側氧基-5 丁酸酯、2-甲基-3-(3, 4-二羥基苯基)-3-側氧基-丙酸酯、2-甲基-4-(3, 4-二羥基苯基)-3-側氧基-丁酸酯、2-苄基-3-(3, 4-二羥基苯基)-3-側氧基-丙酸酯、2-苄基-4-(3, 4-二羥基苯 基)-3-側氧基-丁酸酯;3-(3-曱氧基-4-羥基苯基)-3-側氧基-丙酸酯、4-(3-甲氧基-4-羥基苯基)-3-側氧基-丁酸酯、2-甲 10 基-3-(3-甲氧基-4-羥基苯基)-3-側氧基-丙酸酯、2-甲基-4-(3-曱氧基-4-羥基苯基)-3-側氧基-丁酸酯、2-苄基-3-(3-曱氧基 -4-羥基苯基)-3-側氧基-丙酸酯、2-苄基-4-(3-曱氧基-4-羥基 苯基)-3-側氧基-丁酸酯;3-(3, 4-二甲氧基苯基)-3-側氧基-丙酸酯、4-(3, 4-二甲氧基苯基)-3-側氧基-丁酸酯、2-甲基 15 -3-(3, 4-二曱氧基苯基)-3-側氧基-丙酸酯、2-曱基-4-(3, 4- 二甲氧基苯基)-3-側氧基-丁酸酯、2-苄基-3-(3, 4-二曱氧基 苯基)-3-側氧基-丙酸酯、2-苄基-4-(3, 4-二甲氧基苯基)-3-側氧基-丁酸酯;3-(3,4-亞甲基二氧基苯基)-3-側氧基-丙酸 酯、4-(3, 4-亞曱基二氧基苯基)-3-側氧基-丁酸酯、2-曱基 20 -3-(3, 4-亞甲基二氧基苯基)-3-側氧基-丙酸酯、2-甲基-4-(3, 4-亞甲基二氧苯基)-3-側氧基-丁酸酯、2-苄基-3-(3, 4-亞甲 基二氧基苯基)-3-側氧基-丙酸酯、2-苄基-4-(3, 4-亞甲基二 氧基苯基)-3-側氧基-丁酸酯;3-(2-羥乙基苯基)-3-側氧基-丙酸酯、4-(2-羥乙基苯基)-3-側氧基-丁酸酯、2-甲基-3-(2- 13 200916607 羥乙基苯基)-3-側氧基-丙酸酯、2-甲基-4-(2-羥乙基苯基)-3-側氧基-丁酸酯、2-苄基-3-(2-羥乙基苯基)-3-側氧基-丙酸 酯、2-苄基-4-(2-羥乙基苯基)-3-侧氧基-丁酸酯;3-(3-乙醯 氧基苯基)-3-側氧基-丙酸酯、4-(3-乙醯氧基苯基)-3-側氧基 5 -丁酸酯、2-曱基-3-(3-乙醯氧基苯基)-3-側氧基-丙酸酯、2-甲基-4-(3-乙醯氧基苯基)-3-侧氧基-丁酸酯、2-苄基-3-(3-乙醯氧基苯基)-3-側氧基-丙酸酯、2-苄基-4-(3-乙醯氧基苯 基)-3-側氧基-丁酸酯;3-(4-氟苯基)-3-側氧基-丙酸酯、3-(4-氯苯基)-3-側氧基-丙酸酯、3-(4-溴苯基)-3-側氧基-丙酸酯 10 及3-(4-碘苯基)-3-側氧基-丙酸醋;3-(4-環氧基苯基)-3-側氧 基-丙酸酯、3-(4-甲磺醯基苯基)-3-側氧基-丙酸酯、3-(4-甲 基硫苯基)-3-側氧基-丙酸酯、3-(4-胺基苯基)-3-側氧基-丙 酸酯、3-(4-硝基苯基)-3-側氧基-丙酸酯、3-(4-氰基苯基)-3-側氧基-丙酸酯;3-側氧基-庚烷-1, 5-二羧酸二酯及2-側氧基 15 _丙烧-1,3 -二竣酸二S旨等。 就本發明之式(A1)所示/3-酮基酯化合物而言,於上述 者之中,宜為4, 4-二甲基-3-側氧基-戊酸酯、3-側氧基-戊酸 醋、3-側氧基-戊烷-1, 5-二羧酸酯、3-(2-羥基苯基)-3-側氧 基-丙酸酯、3-(2, 5-二羥基苯基)-3-側氧基-丙酸酯、3-(3, 4-20 二羥基苯基)-3-側氧基-丙酸酯、2-节基-3-側氧基-丁酸酯及 2-曱基-3-側氧基-丁酸酯等。 更佳者可列舉如4, 4-二曱基-3-側氧基-戊酸酯、3-側氧 基-戊烷-1, 5-二羧酸二酯、2-側氧基-丙烷-1, 3-二羧酸二 酯、3-(2-羥基苯基)-3-側氧基-丙酸酯、2-苄基-3-側氧基-丁 14 200916607 酸酯及2-曱基-3-側氧基-丁酸酯。 <態樣B:点-酮基醯胺化合物> 本發明之顯示防蝕效果的取代酮化合物之衍生物可列 舉如:前述式(1)中R4為羥烷基胺基且如下述式(B1)所示之 5 /5-酮基醯胺化合物。 〈化5> Ο 0(C1) R6 wherein 'R1 is an optionally substituted hydrocarbon group; R2 is a hydrogen atom, 2〇 halogen atom or a hydrocarbon group optionally having a substituent; further, R6 is a hydrogen atom or may optionally have a substituent Hydrocarbyl group. For example, the substituted ketone compound of the formula (1) of the present invention and its derivative 200916607 are used for processing a metal film metal circuit composed of copper, aluminum or alloys such as a semiconductor integrated circuit or a printed circuit board. Or when the composition contains one or more of copper and aluminum, it exhibits an excellent anti-corrosion effect. Therefore, the compound is suitably used as an anticorrosive agent and an anticorrosive treatment liquid using the same as 5 and an anticorrosive preservation solution. Further, 'for example, the substituted ketone compound of the present invention and its derivative can be prepared by mixing with a compound having a photoresist stripping property such as an alkanolamine (e.g., 2-aminoethanol) to have both corrosion resistance and The photoresist stripper having a photoresist stripping property can further prepare a photoresist stripping solution using the same; for example, in a photoresist stripping step when the substrate is used as a printed circuit board, thereby imparting a newly formed metal Excellent corrosion resistance of film or metal circuits. [Embodiment] The preferred embodiment of the present invention <Aspect A: 10,000-i homo-ester compound> 15 The derivative of the substituted ketone compound of the present invention which exhibits an anti-surrogate effect is exemplified by the following formula (A1) Lu-ketoester compound. <Chemical Formula 4> R1>^^or5 (A1) wherein R 1 is an optionally substituted hydrocarbon group; R 2 and R 3 are a hydrogen atom 2 oxime, a _ atom, and optionally a hydrocarbon group; R 2 Optionally, it may be bonded to R to form a cyclic structure of a 4- to 6-membered ring; further, R5 is a hydrocarbon group optionally having a substituent. In the above formula, R1 is a hydrocarbon group which may have a substituent. The hydrocarbon group in R1 may, for example, be a methyl group, an ethyl group, a propyl group, a butyl group, a pentylene group, a linear alkyl group having 1 to 2 carbon atoms such as a hexyl group or a hexyl group, or a branch having 3 to 12 carbon atoms. a linear alkyl group having 2 to 1 ring carbon atoms such as a chain alkyl group, a cyclopentyl group, a cyclohexyl group and a cycloheptyl group, which have an atomic number of 3 to 12, such as a cycloalkyl group, a vinyl group, an allyl group and a propenyl group; , isopropenyl, isoprenyl, and geranyl, such as a branched alkenyl group having 3 to 12 carbon atoms, a cyclopentenyl group, a cycloalkenyl group, and a cyclopentenyl group. An aliphatic group having 3 to 12 carbon atoms and an alkynyl group having 2 to 9 carbon atoms such as an ethynyl group and a propargyl group; an aromatic aliphatic group having 7 to 18 carbon atoms such as a benzyl group; An alkyl group (aralkyl group); and an aromatic group such as a stupid group, a phenyl group, and a naphthyl group. In addition, such groups contain various isomers. 10 The hydrocarbon group may optionally have a substituent. Examples of the substituent include a dialkylamino group having a carbon number of 丨~6 such as a fluorine atom and a gas atom, a hydroxyl group, a carboxylic acid group, a sulfonic acid group, a nitro group, a cyano group, and a dimethylamino group. An alkoxy group having 1 to 6 carbon atoms such as an oxy group, an ethyl sulfonyl group or the like, which is bonded to the alkyl group to form a carbonyl group, an alkoxycarbonyl group having 6 or more carbon atoms such as a methoxycarbonyl group, and a carbon atom number of 15 1 . ~6 of the burnt stone to buy sulfhydryl groups such as sulfhydryl and methylthio groups having 1 to 6 carbon atoms. Further, the substituents may have more than one or more of the hydrocarbon groups, but the total number of carbon atoms of the compound of the formula (A1) is preferably not more than 36 in consideration of the balance between fat solubility and water solubility. The tobacco group of R1 is preferably a linear alkyl group, a branched alkyl group, and a cycloalkanyl group, the aforementioned alkynyl group, a pro-arylene group, a phenyl group and a naphthyl group, and more preferably a linear chain having 1 to 6 carbon atoms. An alkyl group, a branched alkyl group having 3 to 6 carbon atoms, and a cycloalkyl group, an ethynyl group, a propargyl group, a benzyl group, a phenyl group and a naphthyl group. Further, the hydrocarbon group of 'R1 may optionally have a substituent. The substituent of Ri is preferably a halogen atom, a hydroxyl group, the above alkoxy group, the aforementioned dialkylamino group, the aforementioned 200916607 alkanesulfonyl group, the above-mentioned pendant oxy group and the aforementioned alkoxycarbonyl group, more preferably a fluorine atom, a gas atom or a hydroxyl group. , methoxy, dimethylamino, methanesulfonyl, 2-oxoxypropyl and iota-(indolylcarbonyl)methyl. Further, R1 may optionally be bonded to R2 or R3 to form a ring-like structure of 3 to 6 membered rings. Among the compounds represented by the formula (A1), such a compound may, for example, be ethyl 2-cyclohexanonecarboxylate. In the formula, R2 and R3 are a hydrogen atom, a halogen atom or a hydrocarbon group which may optionally have a substituent. Further, the substituent of the hydrocarbon group in R2 and R3 is synonymous with the above. Further, R2 may optionally be bonded to R3 to form a cyclic structure of a 3- to 6-membered ring such as a three-membered ring (cyclopropyl group) and a six-membered 10-ring (cyclohexyl group). The hydrocarbon group of R2 and R3 is preferably a hydrogen atom, a fluorine atom, the above linear chain, a branched alkyl group, a cycloalkyl group, the aforementioned alkynyl group, the aforementioned aralkyl group, a phenyl group, a naphthyl group, and a combination of R2 and R3. Cyclopropyl, cyclobutyl, cyclopentyl and cyclohexyl. In the above, R2 and R3 are more preferably a hydrogen source, a fluorine atom, a linear alkyl group having 1 to 4 carbon atoms, a branched or cyclic alkyl group having 3 to 4 carbon atoms, or an ethynyl group. , propargyl, benzyl, phenyl, naphthyl and cyclopropyl, cyclobutyl, cyclopentyl and cyclohexyl groups of R2 and R3, and with a hydrogen atom, a methyl group, an ethyl group, a benzyl group and a combination R2 It is preferably a cyclopropyl group or a cyclobutyl group of R3. Further, the hydrocarbon group of r2 & r3 may optionally have a substituent. The substituent of R3 and R4 is preferably a aryl atom, a hydroxy group, the aforementioned alkoxy group, the aforementioned dialkylamino group, the above-mentioned alkanesulfonyl group, the above-mentioned pendant oxy group, and the above alkoxycarbonyl group are more preferably a fluorine atom or a gas atom. Hydroxy, methoxy, dimethylamino, methanesulfonyl, 2-oxooxypropyl, methoxycarbonylindenyl. 11 200916607 wherein R is a hydrocarbon group synonymous with R1. In the above, R5 is preferably an aliphatic group and a phenyl group, more preferably an alkyl group having 1 to 6 carbon atoms and a stupid group. The formula (A1) of the present invention is as follows: "Qi/3" ketoester compound can be used as it is, and if it is not commercially available, the ketone-based brewing compound can be produced as disclosed in JP-A-2000-143590. Further, the 2-position modification of the scallops can be carried out as needed. For example, refer to Buii ρη'. The 2-position modified compound of the 3-keto-based compound was obtained by the method of 1.62, 4G72 (1989) and the like. 10 is as shown in the above formula (A1) which can be used as the anti-adhesive agent of the present invention; and the S-mercaptoester compound can be exemplified as follows. 3-sided oxy-butyrate, 3-formoxy-valerate, 3-oxo-hexanoic acid S曰, 3-sided oxy-heptanoate, 3-tert-oxyoctanoate, 3_sideoxy-phthalic acid ester, 3-sided oxy-phthalic acid ester, 3-sideoxy-deca-ester, 3-sideoxy-dodecanoic acid 15 §曰, 3_phenyl side oxygen -propionate, 4-phenyl-3-oxo-butyrate, 3-naphthyl-3-oxo-propionate, 4-naphthyl_3_sideoxy-butyrate ; 2 - methyl winter side oxy-butyric acid s, 2 - methyl _ 3 phenyl _ 3 side oxy propionate vinegar, 2 - methyl - 4 - phenyl - oxo - butyl Acid ester, 2,2-diindolyl_3_sideoxy-butyrate, 3-phenyl-2,2-dimethyl-3_sideoxy-propionate, 2,2-dimethyl Base_4_20 phenyl-3-sideoxy-butyric acid vinegar, 2-membered winter side oxy-butyric acid vinegar, 2-membered phenyl phenyl-3-oxo-propionate, 2_ Benzyl_4_phenyl_3 oxo-butyrate, 2,2-dihexyl-3- oxo-butyric acid, 2,2-di-2-yl phenyl winterside oxy- Propionate, 2,2-dibenzyl-4-yl-3-yloxy-butyrate; 3-(2-hydroxyphenyl)-3-oxo-propionate, 4-(2) _hydroxyphenyl)_3_sideoxy-butyric acid 12 200916607 ester, 2-methyl-3-(2-hydroxyl Phenyl)-3-oxo-propionate, 2-mercapto-4-(2-hydroxyphenyl)-3-butyrate, 2-benzyl-3-(2-hydroxyphenyl)- 3-sided oxy-propionate, 2-benzyl-4-(2-hydroxyphenyl)-3-oxo-butyrate; 3-(3,4-dihydroxyphenyl)-3- Sideoxy-propionate, 4-(3,4-dihydroxyphenyl)-3-oxo-5-butyrate, 2-methyl-3-(3,4-dihydroxyphenyl)- 3-sided oxy-propionate, 2-methyl-4-(3,4-dihydroxyphenyl)-3-oxo-butyrate, 2-benzyl-3-(3, 4- Dihydroxyphenyl)-3-oxo-propionate, 2-benzyl-4-(3,4-dihydroxyphenyl)-3-oxo-butyrate; 3-(3-oxime Oxy-4-hydroxyphenyl)-3-oxo-propionate, 4-(3-methoxy-4-hydroxyphenyl)-3-oxo-butyrate, 2-methyl-10 3-(3-methoxy-4-hydroxyphenyl)-3-oxo-propionate, 2-methyl-4-(3-indolyl-4-hydroxyphenyl)-3 - pendant oxy-butyrate, 2-benzyl-3-(3-decyloxy-4-hydroxyphenyl)-3-oxo-propionate, 2-benzyl-4-(3-曱oxy-4-hydroxyphenyl)-3-oxo-butyrate; 3-(3,4-dimethoxyphenyl)-3-oxo-propionate, 4-(3 , 4-dimethoxyphenyl)-3-oxo-butyrate, 2-methyl 15 -3-(3,4-dimethoxyoxyphenyl)-3-oxo-propionate, 2-mercapto-4-(3,4-dimethoxyphenyl)-3-sideoxy -butyrate, 2-benzyl-3-(3,4-dimethoxyphenyl)-3-oxo-propionate, 2-benzyl-4-(3,4-dimethyl Oxyphenyl)-3-oxo-butyrate; 3-(3,4-methylenedioxyphenyl)-3-oxo-propionate, 4-(3, 4- Nalylene dioxyphenyl)-3-oxo-butyrate, 2-mercapto 20 -3-(3,4-methylenedioxyphenyl)-3-oxo-propyl Acid ester, 2-methyl-4-(3,4-methylenedioxyphenyl)-3-oxo-butyrate, 2-benzyl-3-(3,4-methylene) Oxyphenyl)-3-oxo-propionate, 2-benzyl-4-(3,4-methylenedioxyphenyl)-3-oxo-butyrate; 3- (2-Hydroxyethylphenyl)-3-oxo-propionate, 4-(2-hydroxyethylphenyl)-3-oxo-butyrate, 2-methyl-3-( 2- 13 200916607 Hydroxyethylphenyl)-3-oxo-propionate, 2-methyl-4-(2-hydroxyethylphenyl)-3-oxo-butyrate, 2- Benzyl-3-(2-hydroxyethylphenyl)-3-oxo-propionate, 2-benzyl-4-(2-hydroxyethylphenyl)-3-oxo-butyric acid Ester; 3-(3-acetoxyphenyl)-3-oxo-propionic acid 4-(3-Ethyloxyphenyl)-3-oxo-5-butyrate, 2-mercapto-3-(3-ethyloxyphenyl)-3-oxo-propyl Acid ester, 2-methyl-4-(3-acetoxyphenyl)-3-oxo-butyrate, 2-benzyl-3-(3-acetoxyphenyl)-3 - pendant oxy-propionate, 2-benzyl-4-(3-acetoxyphenyl)-3-oxo-butyrate; 3-(4-fluorophenyl)-3- side Oxy-propionate, 3-(4-chlorophenyl)-3-oxo-propionate, 3-(4-bromophenyl)-3-oxo-propionate 10 and 3- (4-iodophenyl)-3-oxo-propionic acid vinegar; 3-(4-epoxyphenyl)-3-oxo-propionate, 3-(4-methanesulfonylbenzene) 3-)oxy-propionate, 3-(4-methylthiophenyl)-3-oxo-propionate, 3-(4-aminophenyl)-3-oxo -propionate, 3-(4-nitrophenyl)-3-oxo-propionate, 3-(4-cyanophenyl)-3-oxo-propionate; 3- The pendant oxy-heptane-1,5-dicarboxylic acid diester and the 2-sided oxy-15-propanone-1,3-dicarboxylic acid di S are intended. With respect to the /3-ketoester compound represented by the formula (A1) of the present invention, among the above, 4,4-dimethyl-3-oxo-valerate and 3-side oxygen are preferred. - Valeric acid vinegar, 3-oxo-pentane-1, 5-dicarboxylate, 3-(2-hydroxyphenyl)-3-oxo-propionate, 3-(2, 5 -dihydroxyphenyl)-3-oxo-propionate, 3-(3, 4-20 dihydroxyphenyl)-3-oxo-propionate, 2-pyryl-3-side oxygen Base-butyrate and 2-mercapto-3-oxo-butyrate. More preferred are, for example, 4,4-dimercapto-3-oxo-valerate, 3-o-oxy-pentane-1,5-dicarboxylic acid diester, 2-sided oxy-propane -1,3-dicarboxylic acid diester, 3-(2-hydroxyphenyl)-3-oxo-propionate, 2-benzyl-3-oxo-butyl 14 200916607 acid ester and 2- Mercapto-3-oxo-butyrate. <Surface B: Dod-ketoguanamine compound> The derivative of the substituted ketone compound exhibiting an anticorrosive effect of the present invention may be, for example, that R4 in the above formula (1) is a hydroxyalkylamine group and has the following formula ( The 5/5-ketoguanamine compound shown in B1). <化5> Ο 0
(CH2)n-OH 式中’ R1為可任擇具有取代基之烴基。R2及R3為氫原 子、鹵素原子、及可任擇具有取代基之烴基。此外,R2可 10任擇地與R3結合而形成3至6員環之環狀結構。R6為氫原子 或可任擇具有取代基之烴基。n=2~6之整數。 本發明之式(B1)所示万_酮基酯化合物可直接使用市售 品。此外,尚無市售品者雖可參照如日本特開昭 63-280048,使對應之二乙烯酮(diketene)與式(B3)所示烷醇 15胺反應而製得,但亦可使對應之式(B2)所示/3-酮基酯化合 物與式(B3)所示烧醇胺反應,而以簡便之方法製得(反應式 [1])。 〈化6> 反應式[1](CH2)n-OH wherein 'R1 is a hydrocarbon group optionally having a substituent. R2 and R3 are a hydrogen atom, a halogen atom, and a hydrocarbon group which may optionally have a substituent. Further, R2 may optionally be bonded to R3 to form a cyclic structure of 3 to 6 membered rings. R6 is a hydrogen atom or a hydrocarbon group which may optionally have a substituent. n = an integer from 2 to 6. A commercially available product can be used as it is in the keto ketone ester compound represented by the formula (B1) of the present invention. In addition, a commercially available product can be obtained by reacting a corresponding diketene with an alkanol 15 amine represented by the formula (B3) by referring to, for example, JP-A-63-280048. The /3-ketoester compound represented by the formula (B2) is reacted with an alkanolamine represented by the formula (B3), and is obtained in a simple manner (Reaction formula [1]). <Chemical 6> Reaction formula [1]
式中,R1至R。及R6與前述者相同。此外,R5為可住擇 具有取代基之煙基。n=2〜6之整數。) 15 200916607 前述式(B1)中,R1為可任擇具有取代基之烴基。R2及 R為氫原子、鹵素原子及可任擇具有取代基之烴基。此外, R可任擇地與R3結合而形成3至6員環之環狀結構。此外, R為可任擇具有取代基之烴基,R6為氫原子或可任擇具有 5取代基之烴基。 韵述鹵素原子、可任擇具有取代基之煙基及R2與R3結 合而形成之3至6員環的環狀結構係與<態樣A:点_酮基酯化 合物 >所定義者同義。 η為亞曱基之數量,表示n=2〜6之整數。n宜為2~4且更 10 宜為2。 月il述式(B2)所示原料之/5—酮基酯化合物可直接使用市 售品。此外,舉例來說,無市售品者可如日本特開 2000-143590號公報製造万-_基酯化合物。更可依需要而進 ^亍δ玄沒-國基S旨化合物之2位修飾。舉例而言,可參照Bull. 15 Soc· Chem· JaPan.,Vo1.62 4072(1989)等而製得該召-酮基 酯化合物之2位修飾化合物。 前記式(B3)所示原料之烷醇胺可列舉如:2_胺基乙醇、 二乙醇胺、N-乙基胺基乙醇、N-甲基胺基乙醇、N-甲基二 乙醇胺、二甲基胺基乙醇、2-(2-胺基乙氧基)乙醇及胺基 2〇 -2-丙醇等。此外,該等烷醇胺亦可用作鹽酸鹽等之鹽或是 乙醇溶液等之有機溶液。 前述烧醇胺宜為2-胺基乙醇、二乙醇胺、N_甲基胺基 乙醇。 前述烷醇胺可直接使用市售品。此外,無市售品者可 16 200916607 參考如曰本特開細4_275933及Synlett , (9)1374〜1378(2006),另外合成再使用。 λ則述燒醇胺之用量相對於式(B2)所示酮基醋化合物 1莫耳宜為〇‘5莫耳〜⑽莫耳,更宜為1.0莫耳〜50莫耳,且尤 5宜為L2莫耳〜1〇莫耳。 牛Ή來过,使式(B2)所示0 _酮基酯化合物與式(B3 示烧醇胺於溶劑不存在下或存在下混合,藉由-邊授拌- 邊使,、反應等方法而製造巾前述式(Bi)所基醯胺化 合物。 1〇 則述式(B1)所示沒-嗣基醯胺化合物之製造通常宜於溶 d不存在下進行,但於改善所使用原料之溶解性等之目的 下,可適當使用溶劑。所使用之溶劑並未特別受限,但可 1列=如1、甲笨、二曱苯及異丙苯等芳香族烴類,·氯苯、 ’ 氣苯1,3-二氣苯及丨,4-二氣苯等_化芳香族烴類; 肖土笨及石肖基甲燒等硝基化烴類;N,N_二甲基甲酿胺、N, N-—甲基乙醯胺、N甲基_2_吡咯酮等醯胺類;i 3二甲基 米唾咬0¾ 1,3_二異丙基_2味唾口定嗣等腺類;異丙基 醚I2—甲氡基乙烷、二乙二醇單甲醚、二乙二醇單乙 醚—乙一醇單丁醚等鏈狀或分枝狀醚類;二噚烷、四氫 2〇 °夫°南等環狀_之趟衍生物;二甲基亞㈣㈣類;二甲 風等風類,—硫化碳;及水等。該等溶劑中,以醯胺類、 亞職類及脲類為佳,且N,N-二甲基甲醯胺、队义二甲基乙 酿胺、义甲基〜比°各酮、二甲基亞颯及1’ 3-二曱基-2-味唾 °定綱更佳。此外’該等溶劑可單獨使用或現合二種以上使 17 200916607 用。 前述溶劑之用量相對於式(B2)所示/3 -酮基酯化合物 lg,宜為0.01~100ml,且較宜為0.02〜20ml,而更宜為 0.03〜5.0ml。 5 反應溫度宜為-20~100°C,更宜為-10~80°C且尤宜為 0~60°C。此外,反應壓力未特別受限,但亦可於減壓下一 邊餾除本反應所產生之醇(R5OH,式(B4)) —邊進行。另, 本發明之製造方法雖可於空氣中進行,但宜於氮、氬等惰 性氣體中進行。 10 依本發明之反應亦可以粗製物形式獲得式(B1)所示/5 - 酮基醯胺化合物,但舉例來說,此種情況下亦可於反應結 束後藉中和、抽提、過濾、濃縮、蒸餾、再結晶、晶析、 管柱層析法等一般製法來進行離析及純化。 如上述般採本發明製法合成出之式(B1)所示/3 -酮基醯 15 胺化合物在R1為脂肪族基時,舉例來說可列舉如下述者。 N-(2-羥乙基)-3-側氧基-丁醯胺、N-(2-羥丙基)-3-側氧 基-丁醯胺、N-(2-羥丁基)-3-側氧基-丁醯胺、N-(2-羥己 基)-3-側氧基-丁醯胺;N-(2-羥乙基)-N-甲基-3-側氧基-丁醯 胺、N-(2-經丙基)-N-曱基-3-側氧基-丁酸胺、N-(2-經丁 20 基)-N-甲基-3-侧氧基-丁醯胺、N-(2-羥己基)-N-曱基-3-側氧 基-丁醯胺;N-(2-羥乙基)-N-苯基-3-側氧基-丁醯胺、N-(2-羥丙基)-N-苯基-3-側氧基-丁醯胺、N-(2-羥丁基)-N-苯基-3-側氧基-丁醯胺、N-(2-羥己基)-N-苯基-3-側氧基-丁醯胺; N,N-二(2-羥乙基)-3-側氧基-丁醯胺、Ν,Ν-β (2-羥丙基)-3- 18 200916607 側氧基-丁醯胺、N,N-二(2-羥丁基)-3-側氧基-丁醯胺、N,N-二(2-羥己基)-3-側氧基-丁醯胺;N-(2-羥乙基)-2-甲基-3-側 氧基-丁醯胺、Ν·(2-羥乙基)-2, 2-二甲基-3-侧氧基-丁醯胺、 Ν-(2-羥乙基)-2-苄基-3-側氧基-丁醯胺、Ν-(2-羥乙基)-2, 2-5 二苄基-3-側氧基-丁醯胺;Ν,Ν-二(2-羥乙基)-2-甲基-3-側 氧基-丁醯胺、N-(2-羥乙基)-N-甲基-2-苄基-3-側氧基-丁醯 胺、N,N-二(2-羥乙基)-2-苄基-3-側氧基-丁醯胺;N-(2-羥 乙基)-4,4-二甲基-3-側氧基-戊酿胺;N-(2-經乙基)-3-側氧 基-戊醯胺、N-(2-羥丁基)-4, 4-二甲基-3-側氧基-戊醯胺、 10 N-(2-羥丁基)-3-側氧基-戊醯胺、N-(2-羥乙基)-N-甲基-4, 4- 二曱基-3-側氧基-戍醯胺、N-(2-羥乙基)-N-甲基-3-側氧基-戊醯胺、N、N-二(2-羥乙基)-4, 4-二甲基-3-側氧基-戊醯胺、 Ν、N-二(2-經乙基)-3-側氧基-戊酿胺;N-(2-羥乙基)-2-甲基 -4, 4-二曱基-3-側氧基-戊醯胺、N-(2-羥乙基)-2-苄基-4, 4-15二甲基-3-側氧基-戊醯胺、N-(2-羥乙基)_2, 2-二甲基-4, 4-二曱基_3_側氧基-戊醯胺、N-(2-羥乙基)_2, 2_二节基_4, 4· 二甲基-3-側氧基-戊酿胺;N-(2-經乙基)_N_曱基_3_侧氧基_ 戊醯胺、N-(2-羥乙基)-N-苯基-3-側氧基_戊醯胺、义(2_羥 乙基)-N-曱基-2-苄基-3-側氧基-戊醯胺、N_(2_羥乙基)_N_ 20苯基-2-苄基-3_側氧基-戊醯胺、N,N-二(2-羥乙基)-2-曱基 •3-側氧基-戊醯胺、N,N-二(2-羥乙基)_2_苄基_3_側氧基_戊 醯胺等。 此外,R1為芳香族基時,舉例來說可列舉如下述者。 N-(2-羥乙基)-3-苯基-3-側氧基_丙醯胺、N (2羥丙 19 200916607 基)-3-苯基-3-側氧基-丙醯胺、N你羥丁基)_3_苯基_3_側氧 基-丙酿胺、N-(2-經己基)_3_苯基!侧氧基丙醯胺;n (2_ 羥乙基)-3-萘基-3-側氧基-丙醯胺、N_(2羥丙基)3萘基-3_ 側氧基-丙醯胺、N-(2-羥丁基)_3_萘基_3_側氧基_丙醯胺、 5 N-(2-羥己基)-3-萘基-3-側氧基-丙醯胺;N_(2_羥乙基)_2_曱 基-3-苯基-3-側氧基-丙醯胺、N-(2-經乙基)_2-苄基-3-苯基 -3-側氧基-丙醯胺、N-(2-羥乙基)_2,2-二甲基-3-苯基-3-側 氧基-丙醯胺、N-(2-羥乙基)-2, 2-二苄基_3_苯基_3_側氧基_ 丙醯胺;N-(2-羥乙基)-N-甲基-3-苯基-3-側氧基-丙醯胺、 10 N-(2-經乙基)-N-苯基-3-苯基-3-側氧基-丙醯胺; N-(2-經乙基)-N-甲基-2-甲基-3-笨基-3-側氧基-丙醯 胺、N-(2-赵乙基)-N-甲基-2-节基-3-笨基-3-侧氧基-丙酿 胺、N-(2-經乙基)-N-苯基-2-甲基-3-苯基-3-側氧基-丙醯 胺、N-d!乙基)-N-苯基-2-卡基-3-苯基-3-側氧基-丙酿 15 胺,N, N-二(2-輕乙基)-3-本基-3-側氧基-丙酿胺、N, N-二(2~ 羥乙基)-2-甲基-3-苯基-3-側氧基-丙醯胺、N, N-二(2-羥乙 基)-2-苄基-3-苯基-3-側氧基-丙醯胺;N-(2-羥乙基)-3-(2-羥 苯基)-3-側氧基-丙醯胺、N-(2-羥乙基)-2-曱基-3-(2-羥基苯 基)-3-侧氧基-丙醯胺、N-(2-羥乙基)-2-苄基-3-(2-羥基苯 20 基)-3-側氧基-丙醯胺;N-(2-羥乙基)-3-(3, 4-二羥基笨基)_3_ 側氧基-丙醯胺、N-(2-羥乙基)-3-(3, 4-二羥基苯基)-2-甲基 -3-側氧基-丙醯胺、N-(2-羥乙基)-3-(3, 4-二羥基苯基)_2-苄 基-3-側氧基-丙醯胺;N-(2-羥乙基)-3-(3-甲氧基-4-羥基笨 基)-3-側氧基-丙醯胺、N-(2-羥乙基)-2-甲基-3-(3-甲氧基-4- 20 200916607 羥基苯基)-3-侧氧基-丙醯胺、N-(2-羥乙基)-2-苄基-3-(3-甲 氧基-4-羥基笨基)-3-側氧基-丙醯胺;N-(2-羥乙基)-3-(3, 4-二曱氧基苯基)-3-侧氧基-丙醯胺、N-(2-羥乙基)-2-曱基-3-(3, 4-二甲氧基苯基)-3-側氧基-丙醯胺、N-(2-羥乙基)-2-苄基 5 -3-(3,4-二甲氧基苯基)-3-側氧基-丙醯胺;N-(2-羥乙 基)-3-(3, 4-亞曱基二氧基苯基)-3-側氧基-丙醯胺、N-(2-羥 乙基)-2-甲基-3-(3, 4-亞甲基二氧基苯基)-3-側氧基-丙醯 胺、N-(2-羥乙基)-2-苄基-3-(3, 4-亞甲基二氧基苯基)-3-側 氧基-丙醯胺;N-(2-羥乙基)-3-(2-羥乙基苯基)-3-側氧基-丙 10醯胺、N-(2-羥乙基)-2-甲基-3-(2-羥乙基苯基)-3-側氧基-丙 酿胺、N-(2-羥乙基)-2-f基-3-(2-羥乙基苯基)-3-側氧基-丙 醯胺;N-(2-羥乙基)-3-(3-乙醯氧基苯基)-3-側氧基-丙醯 胺、N-(2-羥乙基)-2-甲基-3-(3-乙醯氧基苯基)-3-側氧基-丙 醯胺、N-(2-羥乙基)-2-节基-3-(3-乙醯氧基苯基)-3-侧氧基-15丙醯胺;N-(2-羥乙基)-3-(4-氟苯基)-3-側氧基-丙醯胺、N-(2-羥乙基)-3-(4-氣苯基)-3-側氧基-丙醯胺、n-(2-羥乙基)-3-(4-溴苯基)-3-側氧基-丙醯胺、N-(2-羥乙基)_3_(4_磁苯基)-3-側氧基-丙醯胺;N-(2-羥乙基)-3-(4-環氧基苯基)_3_側氧基_ 丙醯胺、N-(2-羥乙基)-3-(4-甲磺醯基笨基)_3_側氧基-丙醢 20胺、N_(2_羥乙基)-3-(4-甲基硫苯基)-3-側氧基_丙醯胺、n-(2-羥乙基)-3-(4-胺基苯基)_3-丙酸酯、N-(2-羥乙基)-3-(4-氰基 苯基)-3-側氧基-丙醯胺等。 此外,R為芳香脂肪族基時,舉例來說可列舉如下述 者0 21 200916607 N-(2-發乙基)-4-苯基-3-側氧基-丁酿胺、N-(2-經丙 基)-4-苯基-3-侧氧基-丁醯胺、N-(2-羥丁基)_4-苯基-3-側氧 基-丁醯胺、N-(2-羥己基)-4-笨基-3-側氧基-丁醯胺;N-(2-羥乙基)-4-萘基-3-侧氧基-丁醯胺、N-(2-羥丙基)-4-萘基-3-5 側氧基-丁醯胺、N-(2-羥丁基)-4-萘基-3-側氧基-丁醯胺、 N-(2-羥己基)-4-萘基-3-側氧基-丁醯胺;N-(2-羥乙基)-2-曱 基-4-苯基-3-側氧基-丁醯胺、N-(2-羥乙基)-2-苄基-4-苯基 -3-側氧基-丁醯胺、N-(2-羥乙基)-2,2-二甲基-4-苯基-3-側 氧基-丁醯胺、N-(2-羥乙基)-2,2-二苄基-4-苯基-3-側氧基-10 丁醯胺;N-(2-羥乙基)-N-甲基-4-苯基-3-側氧基-丁醯胺、 N-(2-赵乙基)-N-苯基-4-苯基-3-側氧基-丁酿胺、N-(2-經乙 基)-N-甲基-2-甲基-4-苯基-3-側氧基-丁酸胺、N-(2-經乙 基)-N-苯基-2-节基-4-苯基-3-側氧基-丁醯胺、N,N-二(2-羥乙基)-4-苯基-3-側氧基-丁醯胺、N,N-二(2-羥乙基)-2-15 甲基-4-苯基-3-側氧基-丁醯胺、N,N-二(2-羥乙基)-2-苄基 -4-苯基-3-側氧基-丁醯胺;N-(2-羥乙基)-4-(2-羥基笨基)-3-側氧基-丁醯胺、N-(2-羥乙基)-2-甲基-4-(2-羥基苯基)-3-側 氡基-丁醯胺、N-(2-羥乙基)-2-苄基-4-(2-羥基苯基)-3-侧氧 基-丁醯胺;N-(2-羥乙基)-4-(3,4-二羥基苯基)-3-側氧基-2〇 丁醯胺、N-(2-羥乙基)-4-(3,4-二羥基苯基)-3-側氧基-丁醯 胺、N-(2-羥乙基)-2-甲基-4-(3 ’ 4-二羥基苯基)-3-側氧基-丁醯胺、N-(2-羥乙基)-2-苄基-4-(3,4-二羥基苯基)-3-側氧 基-丁醯胺、N-(2-羥乙基)-2-苄基-4-(3,4-二羥基苯基)-3-側氧基-丁醯胺、N-(2-羥乙基)-2-苄基-4-(3,4-二羥基苯 22 200916607 基)-3-側氧基-丁醯胺;N-(2-羥乙基)-4-(3-甲氧基-4-羥基苯 基)-3-側氧基-丁醯胺、N-(2-羥乙基)-4-(3-甲氧基-4-羥基苯 基)-2-曱基-3-側氧基-丁醯胺、N-(2-羥乙基)-2-甲基-4-(3-甲 氧基-4-羥基苯基)-3-側氧基-丁醯胺、N-(2-羥乙基)-2,2-二 5 曱基-4-(3-曱氧基-4-羥基苯基)-3-侧氧基-丁醯胺、N-(2-羥乙 基)-2-苄基-4-(3-甲氧基-4-羥基笨基)-3-侧氧基-丁醯胺、 N-(2-羥乙基)-2,2-二节基-4-(3-曱氧基-4-羥基苯基)-3-側氧 基-丁醯胺;N-(2-羥乙基)-4-(3,4-二甲氧基苯基)-3-側氧基 -丁醯胺、N-(2-羥乙基)-2-甲基-4-(3,4-二甲氧基苯基)-3-1〇 側氧基-丁醯胺、N-(2-羥乙基)-2,2-二曱基-4-(3,4-二甲氧 基苯基)-3-側氧基-丁醯胺、N-(2-羥乙基)-2-苄基-4-(3,4-二甲氧基苯基)-3-侧氧基-丁醯胺、N-(2-羥乙基)-2,2-二苄 基-4-(3,4-二甲氧基苯基)-3-側氧基-丁醯胺;N-(2-羥乙 基)-4-(3,4-亞甲基二氧基苯基)-3-側氧基-丁醯胺、N-(2-羥 15乙基)-2-甲基-4-(3,4-亞甲基二氧基笨基)-3-側氧基-丁醯 胺、N-(2-羥乙基)-2,2-二曱基-4-(3,4-亞曱基二氧基笨基)-3-側氧基-丁醯胺、N-(2-羥乙基)-4-(3,4-亞甲基二氧基笨 基)-2-苄基-3-側氧基-丁醯胺、N-(2-羥乙基)-2,2-二苄基 -4-(3 ’ 4-亞甲基二氧基苯基)-3-側氧基-丁醢胺;N-(2-羥乙 20 基)-4-(2-羥乙基苯基)-3-側氧基-丁醯胺、N-(2-羥乙基)-2-曱基-4-(2-羥乙基笨基)-3-側氧基-丁醯胺、N-(2-羥乙基)-2, 2-二甲基-4-(2-羥乙基苯基)-3-側氧基-丁醯胺、N-(2-羥乙 基)-2-苄基-4-(2-羥乙基苯基)-3-側氧基-丁醯胺、N-(2-羥乙 基)-2,2-二节基-4-(2-羥乙基苯基)-3-侧氧基-丁醯胺;N-(2- 23 200916607 、’ 土)4 (3-乙醯氧基笨基)-3-側氧基-丁醯胺、N-(2-羥乙 )甲基4-(3-乙醯氧基笨基)_3_側氧基_丁醯胺、^(2_羥 乙基)-2,2、— ώ甘- 一甲基-4-(3-乙醯氧基苯基)_3-側氧基-丁醯胺、 乙基)_2_节基_4_(3_乙醯氧基苯基)各側氧基-丁酿 5胺Ν (2·㉞乙基)-2,2-二节基-4-(3-乙醯氧基苯基)-3-侧氧 基-丁 醯胺;Π # -(2-红乙基)-4-(4-氟苯基)-3-侧氧基-丁醯胺、 (2皂乙基)-4-(4-氣苯基)_3_側氧基_丁醯胺、N (2羥乙 基)4 (4_/臭笨基)-3_側氧基-丁酿胺及N-(2-經乙基)-4-(4-峨 苯基)_3_側氣基-丁醯胺;N-(2-經乙基)_4_(4_環氧笨基)_3_ 1〇側氧基·丁酿胺、N—(2'經乙基)-4-(4-甲石黃酸基苯基)·3-側氧 基丁 I胺、Ν-(2_羥乙基)-4-(4-甲基硫苯基)-3-側氧基-丁醯 胺、N-(2-至- 乙基)-4-(4-胺笨基)-3-丙酸醋、N-(2-經乙 基)4 (4氰基笨基)-3-側氧基-丁醯胺等。 ^ 私'雄酿胺(aminoenamide)化合物> 15 本發明之顯示防蝕效果之取代酮化合物的衍生物更可 列舉如下述式(C1)所示之胺浠 醯胺化合物。 〈化7>Wherein, R1 to R. And R6 is the same as the foregoing. Further, R5 is a ketone group which can be substituted with a substituent. n = 2 to 6 integer. 15 200916607 In the above formula (B1), R1 is a hydrocarbon group which may have a substituent. R2 and R are a hydrogen atom, a halogen atom and a hydrocarbon group which may have a substituent. Further, R may optionally be combined with R3 to form a cyclic structure of 3 to 6 membered rings. Further, R is a hydrocarbon group which may have a substituent, and R6 is a hydrogen atom or a hydrocarbon group which may optionally have a 5-substituent. A ring structure of a halogen atom, an optionally substituted nicotine group, and a 3 to 6 membered ring formed by combining R2 and R3, and a <form A: dot ketoester compound> Synonymous. η is the number of anthracene groups, and represents an integer of n=2 to 6. n should be 2 to 4 and more preferably 10. The ketone ester compound of the starting material of the formula (B2) can be directly used as a commercial product. Further, for example, a commercially available product can be manufactured as disclosed in Japanese Laid-Open Patent Publication No. 2000-143590. It can be further adjusted according to the needs of the 亍δ玄未- Guoji S compound 2 position modification. For example, the 2-position modified compound of the ketone-ester compound can be obtained by referring to Bull. 15 Soc. Chem. JaPan., Vo1.62 4072 (1989). The alkanolamines of the starting materials of the formula (B3) include, for example, 2-aminoethanol, diethanolamine, N-ethylaminoethanol, N-methylaminoethanol, N-methyldiethanolamine, and dimethyl. Aminoethanol, 2-(2-aminoethoxy)ethanol, and amino-2-indol-2-propanol. Further, the alkanolamines can also be used as a salt of a hydrochloride or the like or an organic solution such as an ethanol solution. The above alkanolamine is preferably 2-aminoethanol, diethanolamine or N-methylaminoethanol. As the aforementioned alkanolamine, a commercially available product can be used as it is. In addition, those who have no commercial products can refer to Rugamoto Tehiko 4_275933 and Synlett, (9) 1374~1378 (2006), and synthesize them for reuse. λ The amount of the calcinolamine relative to the keto vinegar compound 1 represented by the formula (B2) is preferably 〇'5 moles to (10) moles, more preferably 1.0 moles to 50 moles, and particularly preferably 5 For L2 Moer ~ 1 〇 Mo Er. The burdock has been passed, and the 0-ketoester compound represented by the formula (B2) is mixed with the formula (B3: the alcohol-alcoholamine is mixed in the presence or absence of the solvent, and the mixture is stirred and mixed, and the reaction is carried out. Further, the oxime compound of the above formula (Bi) is produced. The preparation of the bis-mercaptoamine compound represented by the formula (B1) is usually carried out in the absence of the solvent d, but the raw materials used are improved. A solvent may be suitably used for the purpose of solubility, etc. The solvent to be used is not particularly limited, but may be one column = aromatic hydrocarbons such as 1, formazan, diphenylbenzene, and cumene, and chlorobenzene. Benzene 1,3-dialdehyde benzene and hydrazine, 4-dioxene benzene and other _ aromatic hydrocarbons; Xiaotuo and Shishaojia smoldering and other nitriding hydrocarbons; N, N-dimethyl amide , N, N-methylammoniumamine, N-methyl-2-pyrrolidinone and other guanamines; i 3 dimethyl sulphate 03⁄4 1,3_diisopropyl-2-sodium sulphate a chain or branched ether such as isopropyl ether I2-methylmercaptoethane, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether-ethylene glycol monobutyl ether; dioxane, tetrahydrogen 2〇°夫°南南等环_趟趟 derivative; dimethyl (4) Class; dimethyl wind and other winds, - carbon sulfide; and water, etc. Among these solvents, guanamines, sub-categories and ureas are preferred, and N,N-dimethylformamide, team It is better to define the dimethyl ethanoamine, the cyanomethyl group, the ketone, the dimethyl hydrazide and the 1' 3-dimercapto-2- sulphate. In addition, the solvents can be used alone or present. The amount of the solvent used is preferably 0.01 to 100 ml, and more preferably 0.02 to 20 ml, and more preferably 0.03 to 3% of the ketoester compound lg represented by the formula (B2). 5.0 ml. 5 The reaction temperature is preferably -20 to 100 ° C, more preferably -10 to 80 ° C and particularly preferably 0 to 60 ° C. In addition, the reaction pressure is not particularly limited, but can also be under reduced pressure While the alcohol (R5OH, formula (B4)) produced by the reaction is distilled off, the production method of the present invention can be carried out in air, but it is preferably carried out in an inert gas such as nitrogen or argon. The reaction of the invention can also obtain the /5-ketoguanamine compound represented by the formula (B1) in the form of a crude product, but, for example, in this case, it can also be neutralized, extracted, filtered, concentrated after the reaction is completed. Distillation Separation and purification by a general method such as recrystallization, crystallization, column chromatography, etc. The /3-ketooxime 15 amine compound represented by the formula (B1) synthesized by the method of the present invention as described above is a fat in R1. In the case of a group, for example, the following may be mentioned. N-(2-hydroxyethyl)-3-oxo-butanamine, N-(2-hydroxypropyl)-3-oxo-butyl Indoleamine, N-(2-hydroxybutyl)-3-oxo-butamine, N-(2-hydroxyhexyl)-3-oxo-butanamine; N-(2-hydroxyethyl) -N-methyl-3-oxirane-butanamine, N-(2-propyl)-N-mercapto-3-oxo-butyric acid amine, N-(2- via butyl 20 -N-methyl-3-indolyl-butanamine, N-(2-hydroxyhexyl)-N-indolyl-3-oxo-butanamine; N-(2-hydroxyethyl) -N-phenyl-3-oxo-butylamine, N-(2-hydroxypropyl)-N-phenyl-3-oxo-butanamine, N-(2-hydroxybutyl) -N-phenyl-3-oxo-butylamine, N-(2-hydroxyhexyl)-N-phenyl-3-oxo-butanamine; N,N-bis(2-hydroxyl Ethyl)-3-oxo-butanamine, anthracene, Ν-β (2-hydroxypropyl)-3- 18 200916607 oxo-butylamine, N,N-bis(2-hydroxybutyl) --3-Alkyloxy-butanamine, N,N-bis(2-hydroxyhexyl)-3-oxo-butane ; N-(2-hydroxyethyl)-2-methyl-3-oxo-butanamine, Ν·(2-hydroxyethyl)-2,2-dimethyl-3-oxo- Butylamine, Ν-(2-hydroxyethyl)-2-benzyl-3-oxo-butanamine, Ν-(2-hydroxyethyl)-2, 2-5 dibenzyl-3- Oxyl-butylamine; hydrazine, hydrazine-bis(2-hydroxyethyl)-2-methyl-3-oxo-butanamine, N-(2-hydroxyethyl)-N-methyl -2-benzyl-3-sidedoxy-butanamine, N,N-bis(2-hydroxyethyl)-2-benzyl-3-oxo-butanamine; N-(2-hydroxyl Ethyl)-4,4-dimethyl-3-oxo-pentamidine; N-(2-ethyl)-3-oxo-pentamethyleneamine, N-(2-hydroxybutyl) -4,4-dimethyl-3-oxo-pentamidine, 10 N-(2-hydroxybutyl)-3-oxo-pentamethyleneamine, N-(2-hydroxyethyl) -N-methyl-4,4-dimercapto-3-indolyl-decylamine, N-(2-hydroxyethyl)-N-methyl-3-oxo-pentamethyleneamine, N , N-bis(2-hydroxyethyl)-4,4-dimethyl-3-oxo-pentamethyleneamine, hydrazine, N-bis(2-ethyl)-3-oxo-pentane Amine; N-(2-hydroxyethyl)-2-methyl-4, 4-dimercapto-3-oxo-pentamidine, N-(2-hydroxyethyl)-2-benzyl -4, 4-15 dimethyl-3-oxo-pentamidine, N-(2-hydroxyethyl)_2, 2-dimethyl-4,4-didecyl_3_ side Ketopentaamine, N-(2-hydroxyethyl)_2, 2_di-Butyl-4,4·dimethyl-3-oxo-pentamidine; N-(2-ethyl) _N_mercapto_3_sideoxy_pentamidine, N-(2-hydroxyethyl)-N-phenyl-3-yloxy-pentamethyleneamine, sense (2-hydroxyethyl)-N -mercapto-2-benzyl-3-indolyl-pentamidine, N_(2-hydroxyethyl)-N-20phenyl-2-benzyl-3_sideoxy-pentamidine, N,N - bis(2-hydroxyethyl)-2-mercapto•3-o-oxy-pentamidine, N,N-bis(2-hydroxyethyl)_2-benzyl_3_sideoxy_pentaquinone Amines, etc. Further, when R1 is an aromatic group, for example, the following may be mentioned. N-(2-hydroxyethyl)-3-phenyl-3-oxo-propionamine, N (2-hydroxypropyl 19 200916607)-3-phenyl-3-oxo-propionamide, N you hydroxybutyl)_3_phenyl_3_sideoxy-propanol, N-(2-hexyl)_3_phenyl! Side oxypropylamine; n (2-hydroxyethyl)-3-naphthyl-3-oxo-propionamine, N_(2-hydroxypropyl)3 naphthyl-3_ oxo-propionamide, N-(2-hydroxybutyl)_3_naphthyl_3_sideoxy-propionamine, 5 N-(2-hydroxyhexyl)-3-naphthyl-3-oxo-propionamide; N_ (2-hydroxyethyl)_2-mercapto-3-phenyl-3-oxo-propionamine, N-(2-ethyl)-2-benzyl-3-phenyl-3-oxo -propanamide, N-(2-hydroxyethyl)_2,2-dimethyl-3-phenyl-3-oxo-propionamide, N-(2-hydroxyethyl)-2, 2-dibenzyl-3-ylphenyl_3_sideoxy-propionamine; N-(2-hydroxyethyl)-N-methyl-3-phenyl-3-oxo-propionamide , 10 N-(2-ethyl)-N-phenyl-3-phenyl-3-oxo-propionamine; N-(2-ethyl)-N-methyl-2-methyl Benzyl-3-phenyl-3-oxo-propionamine, N-(2-diethylethyl)-N-methyl-2-pyryl-3-phenyl-3-oxo-propenylamine, N-(2-Ethyl)-N-phenyl-2-methyl-3-phenyl-3-oxo-propionamine, Nd!ethyl)-N-phenyl-2-carbyl -3-phenyl-3-oxo-propyl 15 amine, N, N-bis(2-lightethyl)-3-benz-3-oxo-propanamine, N, N-di (2~Hydroxyethyl)-2-methyl-3-phenyl-3-oxo-propionamide, N, N-di (2 -hydroxyethyl)-2-benzyl-3-phenyl-3-oxo-propionamine; N-(2-hydroxyethyl)-3-(2-hydroxyphenyl)-3-sideoxy -propanolamine, N-(2-hydroxyethyl)-2-mercapto-3-(2-hydroxyphenyl)-3-oxo-propionamide, N-(2-hydroxyethyl) -2-benzyl-3-(2-hydroxyphenyl 20-yl)-3-oxo-propionamine; N-(2-hydroxyethyl)-3-(3,4-dihydroxyphenyl)_3_ Sideoxy-propionamide, N-(2-hydroxyethyl)-3-(3,4-dihydroxyphenyl)-2-methyl-3-oxo-propanamide, N-(2 -hydroxyethyl)-3-(3,4-dihydroxyphenyl)_2-benzyl-3-oxo-propionamine; N-(2-hydroxyethyl)-3-(3-methoxy 4--4-hydroxyphenyl)-3-oxo-propionamine, N-(2-hydroxyethyl)-2-methyl-3-(3-methoxy-4- 20 200916607 hydroxyphenyl --3-Alkyloxy-propanamide, N-(2-hydroxyethyl)-2-benzyl-3-(3-methoxy-4-hydroxyphenyl)-3-oxo-propyl Indoleamine; N-(2-hydroxyethyl)-3-(3,4-dimethoxyoxyphenyl)-3-oxo-propionamide, N-(2-hydroxyethyl)-2- Mercapto-3-(3,4-dimethoxyphenyl)-3-oxo-propionamide, N-(2-hydroxyethyl)-2-benzyl 5 -3-(3,4 -dimethoxyphenyl)-3-oxo-propionamide; N-(2-hydroxyethyl)-3-(3,4-ylidenedioxyphenyl)-3 - pendant oxy-propanamide, N-(2-hydroxyethyl)-2-methyl-3-(3,4-methylenedioxyphenyl)-3-oxo-propionamide , N-(2-hydroxyethyl)-2-benzyl-3-(3,4-methylenedioxyphenyl)-3-oxo-propionamide; N-(2-hydroxyethyl) 3-(2-hydroxyethylphenyl)-3-oxo-propanyl 10 decylamine, N-(2-hydroxyethyl)-2-methyl-3-(2-hydroxyethylbenzene Benzyloxy-propylamine, N-(2-hydroxyethyl)-2-fyl-3-(2-hydroxyethylphenyl)-3-oxo-propionamide; N-(2-hydroxyethyl)-3-(3-acetoxyphenyl)-3-oxo-propionamide, N-(2-hydroxyethyl)-2-methyl-3- (3-Ethyloxyphenyl)-3-oxo-propionamide, N-(2-hydroxyethyl)-2-pyringyl-3-(3-ethyloxyphenyl)-3 - pendant oxy-15-propanolamine; N-(2-hydroxyethyl)-3-(4-fluorophenyl)-3-oxo-propionamide, N-(2-hydroxyethyl)- 3-(4-Phenylphenyl)-3-oxo-propionamide, n-(2-hydroxyethyl)-3-(4-bromophenyl)-3-oxo-propionamide, N-(2-hydroxyethyl)_3_(4_magnetic phenyl)-3-oxo-propionamine; N-(2-hydroxyethyl)-3-(4-epoxyphenyl)_3 _ pendant oxy-propionamine, N-(2-hydroxyethyl)-3-(4-methylsulfonylphenyl)_3_sideoxy-propionyl 20 amine, N_(2-hydroxyethyl) -3-(4- Thiophenyl)-3-oxo-propionamine, n-(2-hydroxyethyl)-3-(4-aminophenyl)-3-propionate, N-(2-hydroxyethyl -3-(4-cyanophenyl)-3-oxo-propionamine and the like. Further, when R is an aromatic aliphatic group, for example, the following may be mentioned as follows: 0 21 200916607 N-(2-ethyl)-4-phenyl-3-oxo-butylamine, N-(2 -propyl)-4-phenyl-3-oxo-butanamine, N-(2-hydroxybutyl)-4-phenyl-3-oxo-butanamine, N-(2- Hydroxyhexyl)-4-phenyl-3-oxo-butanamine; N-(2-hydroxyethyl)-4-naphthyl-3-yloxy-butanamine, N-(2-hydroxyl Propyl)-4-naphthyl-3-5 pendant oxy-butanamine, N-(2-hydroxybutyl)-4-naphthyl-3-oxo-butanamine, N-(2- Hydroxyhexyl)-4-naphthyl-3-yloxy-butanamine; N-(2-hydroxyethyl)-2-indolyl-4-phenyl-3-oxo-butanamine, N -(2-hydroxyethyl)-2-benzyl-4-phenyl-3-oxo-butanamine, N-(2-hydroxyethyl)-2,2-dimethyl-4-benzene 3-yloxy-butanamine, N-(2-hydroxyethyl)-2,2-dibenzyl-4-phenyl-3-oxo-10-butanamine; N-(2 -hydroxyethyl)-N-methyl-4-phenyl-3-oxo-butanamine, N-(2-diethylethyl)-N-phenyl-4-phenyl-3-yloxy- Styrene, N-(2-ethyl)-N-methyl-2-methyl-4-phenyl-3-oxo-butyric acid, N-(2-ethyl)-N -Phenyl-2-pyryl-4-phenyl-3-oxo-butanamine, N,N- (2-hydroxyethyl)-4-phenyl-3-oxo-butanamine, N,N-bis(2-hydroxyethyl)-2-15 methyl-4-phenyl-3- side Oxy-butanamine, N,N-bis(2-hydroxyethyl)-2-benzyl-4-phenyl-3-oxo-butanamine; N-(2-hydroxyethyl)- 4-(2-hydroxyphenyl)-3-oxo-butamine, N-(2-hydroxyethyl)-2-methyl-4-(2-hydroxyphenyl)-3-indolyl - Butanamine, N-(2-hydroxyethyl)-2-benzyl-4-(2-hydroxyphenyl)-3-oxo-butanamine; N-(2-hydroxyethyl)- 4-(3,4-dihydroxyphenyl)-3-oxoyl-2-azetamine, N-(2-hydroxyethyl)-4-(3,4-dihydroxyphenyl)-3- Oxyl-butylamine, N-(2-hydroxyethyl)-2-methyl-4-(3'4-dihydroxyphenyl)-3-oxo-butanamine, N-(2 -hydroxyethyl)-2-benzyl-4-(3,4-dihydroxyphenyl)-3-oxo-butanamine, N-(2-hydroxyethyl)-2-benzyl-4 -(3,4-dihydroxyphenyl)-3-oxo-butamine, N-(2-hydroxyethyl)-2-benzyl-4-(3,4-dihydroxybenzene 22 200916607 3-oxooxy-butanamine; N-(2-hydroxyethyl)-4-(3-methoxy-4-hydroxyphenyl)-3-oxo-butanamine, N- (2-Hydroxyethyl)-4-(3-methoxy-4-hydroxyphenyl)-2-indolyl-3-pentyloxy-butanamine, N-(2-hydroxyethyl) 2-methyl-4-(3-methoxy-4-hydroxyphenyl)-3-oxo-butamine, N-(2-hydroxyethyl)-2,2-di 5 Mercapto-4-(3-decyloxy-4-hydroxyphenyl)-3-oxo-butanamine, N-(2-hydroxyethyl)-2-benzyl-4-(3-methyl Oxy-4-hydroxyphenyl)-3-oxo-butamine, N-(2-hydroxyethyl)-2,2-dibenzyl-4-(3-decyloxy-4-hydroxyl Phenyl)-3-oxo-butylamine; N-(2-hydroxyethyl)-4-(3,4-dimethoxyphenyl)-3-oxo-butanamine, N -(2-hydroxyethyl)-2-methyl-4-(3,4-dimethoxyphenyl)-3-1 oxime oxo-butylamine, N-(2-hydroxyethyl) -2,2-dimercapto-4-(3,4-dimethoxyphenyl)-3-oxo-butanamine, N-(2-hydroxyethyl)-2-benzyl-4 -(3,4-dimethoxyphenyl)-3-oxo-butanamine, N-(2-hydroxyethyl)-2,2-dibenzyl-4-(3,4-di Methoxyphenyl)-3-oxo-butanamine; N-(2-hydroxyethyl)-4-(3,4-methylenedioxyphenyl)-3-oxo- Butanamine, N-(2-hydroxylethyl)-2-methyl-4-(3,4-methylenedioxyphenyl)-3-oxo-butanamine, N-( 2-hydroxyethyl)-2,2-dimercapto-4-(3,4-decyldioxyphenyl)-3-oxo-butanamine, N-(2- Ethyl)-4-(3,4-methylenedioxyphenyl)-2-benzyl-3-oxo-butanamine, N-(2-hydroxyethyl)-2,2- Dibenzyl-4-(3'4-methylenedioxyphenyl)-3-oxo-butanamine; N-(2-hydroxyethylamino)-4-(2-hydroxyethyl) Phenyl)-3-oxo-butylamine, N-(2-hydroxyethyl)-2-mercapto-4-(2-hydroxyethyl)phenyloxy-3-butanamine , N-(2-hydroxyethyl)-2,2-dimethyl-4-(2-hydroxyethylphenyl)-3-oxo-butanamine, N-(2-hydroxyethyl) -2-benzyl-4-(2-hydroxyethylphenyl)-3-oxo-butanamine, N-(2-hydroxyethyl)-2,2-dibenzyl-4-(2 -hydroxyethylphenyl)-3-oxo-butanamine; N-(2- 23 200916607, 'soil) 4 (3-acetoxyphenyl)-3-oxo-butylamine , N-(2-hydroxyethyl)methyl 4-(3-ethoxyindolyl)_3_sideoxy-butanamine, ^(2-hydroxyethyl)-2,2, - ώ甘- Monomethyl-4-(3-acetoxyphenyl)_3-o-oxy-butanamine, ethyl)_2_pyringyl_4_(3-ethyloxyphenyl) Brewing 5 amine hydrazine (2·34 ethyl)-2,2-dipyridyl-4-(3-acetoxyphenyl)-3-oxo-butanamine; Π # -(2- Red ethyl)-4-(4-fluorophenyl)-3-oxo-butylamine (2 soap ethyl)-4-(4-phenylphenyl)_3_sideoxy-butanamine, N (2hydroxyethyl) 4 (4_/ stinky)-3_sideoxy-butyl Amine and N-(2-ethyl)-4-(4-indolephenyl)_3_side gas-butamine; N-(2-ethyl)_4_(4_epoxy)_3_ 1〇-oxyl butylamine, N—(2′-ethyl)-4-(4-methyllithophenylphenyl)·3-sideoxybutanamine, Ν-(2_hydroxyethyl 4-(4-methylthiophenyl)-3-oxo-butanamine, N-(2- to-ethyl)-4-(4-amine-phenyl)-3-propionic acid Vinegar, N-(2-ethyl) 4 (4 cyanophenyl)-3-oxo-butanamine, and the like. ^Amino 'aminoenamide compound> The derivative of the substituted ketone compound which exhibits an anticorrosive effect of the present invention is more preferably an amine oxime oxime compound represented by the following formula (C1). <化7>
(C1) 式中’R為可任擇具有取代基之煙基。R2為氣原子、 鹵素原子或可任擇具有取代基之烴基。此外,R6為氫原子 或可任擇具有取代基之烴基。) 式(C1)之胺烯醯胺化合物可使式(C2)所示/3 -酮基酯化 合物或式(C4)所示/5 -酮基醯胺化合物與式(C3)所示烷醇胺 反應而製得(反應式[2]及反應式[3])。 24 20 200916607 〈化8> 反應式[2] Ο ο(C1) wherein 'R is a thiol group which may have a substituent. R2 is a gas atom, a halogen atom or a hydrocarbon group which may have a substituent. Further, R6 is a hydrogen atom or a hydrocarbon group which may optionally have a substituent. The alkyne oxime compound of the formula (C1) may be a /3-ketoester compound represented by the formula (C2) or a 5-ketodecylamine compound represented by the formula (C4) and an alkanol represented by the formula (C3). The amine reaction is carried out (reaction formula [2] and reaction formula [3]). 24 20 200916607 <化8> Reaction formula [2] Ο ο
r7-oh 式中’ R1為可任擇具有取代基之烴基。R2為可任擇具 5 有氫原子及取代基之烴基。R3為氫原子。R5為可任擇具有 取代基之烴基。R6為氫原子或可任擇具有取代基之烴基, R7為氫原子或與R5同義之取代基。n=2〜6之整數。 〈化9> 反應式[3]R7-oh wherein 'R1 is a hydrocarbon group optionally having a substituent. R2 is a hydrocarbon group optionally having 5 hydrogen atoms and a substituent. R3 is a hydrogen atom. R5 is a hydrocarbon group optionally having a substituent. R6 is a hydrogen atom or a hydrocarbon group which may have a substituent, and R7 is a hydrogen atom or a substituent synonymous with R5. n = 2 to 6 integer. <Chemical 9> Reaction formula [3]
式中’ R1至R7及η與上述者同義。 本發明之式(C1)所示胺烯醯胺化合物中,R2為氫原子 及可任擇具有取代基之烴基,R6為氫原子或可任擇具有取 代基之烴基。η為亞曱基之數量,表示2~6之整數。η宜為2〜4 15 且更宜為2。 如上述,前述反應式[2]中式(C2)所示胺烯醯胺化合物 之原料可列舉如.月il述式(Α1)所示/5-酮基S旨化合物中,r2 或R3中之任一為氫原子者。此外,式(C2)所示原料之酮 基酯化合物可直接使用市售品。此外,無市售品者則可參 20 照如Bul1. Soc. Chem. Japan” Vol_62 4072(1989)等,製得該 /3-酮基酯化合物之2位修飾化合物。 前述反應式[3]中’式(C4)所示胺烯醯胺化合物之原料 25 200916607 可列舉如前述式(B1)所示0酮基醯胺化合物中尺2或&3中 任為氫原子者。此外’式(C4)所示原料之点酮基醯胺化 合物可直接使用市售品。另,無市售品者亦可依前述反應 式π]另外合成使用。 5 %述式(C3)所示㈣之騎胺可鱗如2_胺基乙醇、二 $醇胺、N-乙基胺基乙醇、N-甲基胺基乙醇、N_甲基二乙 醇胺:二曱基胺基乙醇、2_(2胺基乙氧基)乙醇及卜胺基_2· 丙醇等此外,該等燒醇胺亦可用作鹽酸鹽等之鹽或乙醇 溶液等之有機溶液。 1〇 冑魏醇胺宜為2·胺基乙醇、二乙醇胺或N·甲基胺基 乙醇。 前述烧醇胺可直接使用市售品。此外,無市售品者可 參考曰本特開2004-275933及Synlett., (9)1374-1378(2006),另外合成使用。 15 、前魏咖之用量㈣於·2)所㈣酮基統合物 或式㈣所化合物丨莫耳,宜桃$莫耳, 莫耳且且為1.0莫耳〜莫耳更宜為2莫耳~1〇莫耳。 前述式(C1)所示胺烯酿胺化合物係式(C2)所示^嗣基 酯化合物或式(C4)所示酮基醯胺化合物與式仰所示燒 2〇醇胺於岭Μ不存在下或存在下混合,例如藉一邊授掉一邊 反應等之方法而製得者。 前述式(C1)所示胺稀酿胺化合物之製造通常宜於溶劑 不存在下進行’但可於改善所用原料之溶解性等的目的下 適田使用岭劑。所使用之溶劑並未特別$限,但舉例來說, 26 200916607 下述溶劑可適於使用。 苯、甲苯、二甲苯、異丙苯等芳香族烴類、氯苯、1,2-二氯苯、1,3-二氣苯、1, 4-二氣苯等鹵化芳香族烴類;硝 基苯、硝基甲烷等硝基化烴類;N,N-二曱基甲醯胺、N, N-5 二曱基乙醯胺、N-甲基-2-吡咯酮等醯胺類;1,3-二甲基-2-咪唑啶酮、1, 3-二異丙基-2-咪唑啶酮等脲類;異丙醚、1, 2-二甲氧基乙烷、二乙二醇單甲醚、二乙二醇單乙醚、二乙 二醇單丁醚等鏈狀或分枝狀醚類;二哼烷、四氫呋喃等環 狀醚類之醚衍生物;二甲基亞砜等亞颯類;二甲基颯等颯 10 類;二硫化碳;及水等。該等溶劑中,以醯胺類、亞砜類 及脲類為佳,且N, N-二曱基甲醯胺、N, N-二曱基乙醯胺、 N-甲基-2-吡咯酮、二甲基亞砜及1,3-二甲基-2-咪唑啶酮更 佳。此外,該等溶劑可單獨使用或混合二種以上使用。 該溶劑之用量相對於式(C2)所示酮基酯化合物或式 15 (C4)所示石-酮基醯胺化合物lg宜為0.01~100ml,更宜為 0.02~20m卜更宜為0.03〜5·0πύ。 反應溫度宜為-20~100°C,更宜為-10〜80°C,尤宜為 0~60°C。此外,反應壓力並未特別受限,但可於減壓下餾 除本反應產生之醇或水(R7〇H,式(C5))進行之。此外,本 20 發明之製造方法亦可於空氣中進行,但宜於氮、氬等惰性 氣體中進行。 藉本發明之反應,式(C1)所示胺烯醯胺化合物亦可以 粗製物形態製得,但此時,亦可於反應結束後藉由如中和、 抽提、過濾、濃縮、蒸餾、再結晶、晶析、管柱層析等一 27 200916607 般製法來進行離析及純化。 上^本4明製去所合成之式(ci)所示胺烯醯胺化 〇 了列舉如.喊式⑷)所示/5·酮基g旨化合物及前述式 (叫所示㈣基_化合物所例示之化合物等之中,將r2 2 R中之任—為氫原子的化合物料原料而製得之化合 物。 <防餘劑之形態> 本毛月化CT物所用防餘劑及使用其之防蚀處理液以及 防钮保存液之用途並未特別受限。前述用途可列舉如:用 10於半導體積體電路及印刷電路基板等製程所使用之銅、紹 或該等之合金構成的金屬膜、金屬配線或構成成分中具有 銅及鋁之一種以上的物品。 本發月防餘劑之較佳用途可列舉如:使用於半導體基 板上所开^/成之金屬膜(特別是銅膜之防姓處理步驟)上。 15 此外就本發明之防钱處理液的較佳用途而言,舉例 來^兒了列牛如.於施加有銅、鋁或該等之合金電路的LSI 基板或印刷電路基板等之洗淨步驟或CMP製織之沖洗步 驟等中,以防钱處理為目的之使用。此外,本發明之防链 保存液之姉用途可列舉如·於CMp製程中經表面處理之 20金屬膜或電路基板加工後之半導體晶圓的保存溶液等,以 防融處理作為目的之使用。且最佳者則可列舉如:上述情 況中,金屬臈或電路均使用銅的情形下使用本發明。 本發明之防餘劑可直接使用前述式(A1)、式(B1)及式 (⑶所示化合物本身,但亦可混合2種以上之該等化合物來 28 200916607 使用。另,舉例來說,本劑亦可使用水及/或有機溶劑而作 為防蝕處理液或防蝕保存液使用。 此外,亦可與不致使該化合物分解之酸或鹼混合,進 行pH調整以改善水溶性,或是為了防止防蝕劑本身劣化而 5 混合氧化劑等,將因應使用條件及用途而配合添加物者用 作防蝕劑、防蝕處理液及防蝕保存液。 可用在防蝕劑態樣之有機溶劑僅需是不與本發明之式 (A1)、式(B1)及式(C1)所示化合物發生反應者即可,並未特 別受限。適宜之溶劑可列舉如:苯、甲苯、二曱苯及異丙 10 苯等芳香族烴類;氯苯、1,2-二氯苯、1,3-二氯苯及1, 4-二氯苯等鹵化芳香族烴類;硝基苯硝基化芳香族烴類;二 甲基亞砜等亞颯類;二甲基砜、二乙基颯、雙(2-羥乙基) 砜及四亞曱基砜等砜類;Ν,Ν-二甲基甲醯胺、Ν,Ν-二乙基 乙醯醯胺、Ν-甲基-2-吡咯酮、Ν-羥曱基-2-吡咯酮及Ν-羥乙 15 基-2-吡咯酮等醯胺類;1, 3-二甲基-2-咪唑啶酮、1,3-二乙 基-2-咪唑啶酮及1,3-二異丙基-2-咪唑啶酮等脲類;異丙 鍵、1,2-二甲氧基乙烧、二崎烧、四氮α夫喃等鍵類;甲醇、 乙醇、正丙醇、正丁醇、異丙醇、乙二醇等醇類;乙二醇 單甲醚、乙二醇單乙醚、乙二醇單丁醚、二乙二醇、二乙 20 二醇單曱醚、二乙二醇單乙醚及二乙二醇單丁醚、乙二醇 二甲醚、乙二醇單曱醚乙酸酯及乙二醇單乙醚乙酸酯等多 元醇類之醚或酯衍生物等。此外,該等有機溶劑可單獨使 用或混合二種以上使用。 該等有機溶劑中,以低級醇類、亞砜類及脲類為佳, 29 200916607 且乙醇、正丙醇、正丁醇、異丙醇、二曱基亞砜及1,3-二 甲基-2-咪。坐咬酮更佳。 本發明之防蝕劑中,式(A1)、式(B1)及式(C1)所示化合 物之濃度可依用途及目的適當設定,但宜為〇·〇1質量%~80 5質量%’更宜為〇.1質量%〜60質量%,且尤宜為1.0質量%~40 質量%。此外’另外與pH調製劑及抗氧化劑等配合劑混合 時’宜考慮與該等配合劑之相溶性及/或分散性。 本發明之防蝕處理液中,式(A1)、式(B1)及式(C1)所示 化合物之濃度可依用途及目的而適當設定,但舉例來說, 10用於形成有金屬配線之基板的洗淨處理與防蝕處理時,宜 為0.01質量%~80質量%,更宜為(u質量%〜6〇質量%,且尤 宜為1.0質量%~40質量%。本發明之防蝕處理液於前述範圍 内時’從防蝕效果、基板洗淨時間及洗淨廢液量(環境負擔) 之觀點來看甚適宜。此外,舉例來說,本發明之防蝕處理 15液除前述者外亦可用於CMP製程或CMP製程後之沖洗步驟 中。 舉例而言,本發明之防蝕保存液sCMP製程後至進行 用以去除研磨粒子等的洗淨作業之間,亦可暫時用作保存 晶圓之溶液。 2〇 本發明之防蝕保存液中,式(A1)、式(B1)及式(C1)所示 化δ物之/展度可依用途及目的而適當設定,但宜為〇⑴質 量%〜80質量%,更宜為ai質量%〜6〇質量% ’而尤宜為ι〇 質量%〜40質量%。 本發明之防蝕保存液於上述範圍内時,從防蝕效果、 30 200916607 2反洗甲時間及洗淨廢液量(環境負奶等觀點來看甚理 想。特別是’金屬膜或金屬電路之素材為銅時,本發明之 防蝕保存液將顯示出更良好之防蝕效果。 <剝離劑形態> 。本發明之式(A1)、式(B1)及式(C1)所示化合物,例如, 可,由與烧醇胺(2·胺基醇等)等具有光阻剝離性能之化合 物此合等之方法,調製出兼具防姓性能與光阻剝離性能之 光阻剝離劑及光阻剝離液。此外,亦可將式(Al)、式(Bl) 及式(Cl)所示化合物混合2種以上使用。 1〇 本發明中’「光阻剝離劑」係指:對前記金屬種具有防 蝕丨生此,且舉例來說,如製作印刷基板時之光阻剝離步驟 身又用以從存有光阻膜之物品剝除多餘之光阻膜及各種殘 凌的藥劑(agent)。 具有前述剝離性能之化合物可列舉如羥基胺類、烷醇 15胺或氟化氫酸鹽等,但以烷醇胺為佳。 具體來說,前述烷醇胺化合物可列舉如2_胺基乙醇、 二乙醇胺、N-以基胺基乙醇、N_曱基胺基乙醇、N_甲基二 乙醇胺、二甲基胺基乙醇、2_(2_胺基乙氧基)乙醇、卜胺基 •2-丙醇、二乙醇胺等。且宜為2_胺基乙醇、二乙醇胺、ν-μ 甲基胺基乙醇。 舉例來說,本發明之光阻剝離劑可以防止該剝離劑本 身之劣化為目的而添加抗氧化劑,或以改善溶解性為目的 而添加與酸、鹼、水、有機溶劑或其他配合成分具有混合 性之雙性(amphiphilic)化合物或ρΗ調製劑。 31 200916607 此外,該光阻剝離劑可藉由使用水、有機溶劑或該等 之混合溶劑來調製出光阻剝離液,藉此可與前述光阻剝離 劑相同地用於將光阻剝離步驟所產生之各種廢物及殘渣作 光阻剝離。 5 10 15 20 本發明之具有防蝕性能的光阻剝離劑可僅以式(A1)、 式(B1)及式(Cl)所示化合物肖具光阻剝雜能之化合物混 合而調製出並加以使用,氮舉例來說,亦可使用水、有機 溶劑或該等之混合溶液將本劑製成光阻剝 離液使用。另 外所使用之有機溶劑與調製前述防姓劑及使用其之防餘 處理液以及防倾存液可使用的錢溶劑同義。 本毛月之光P且制離劑中式㈢、式(叫及式(⑶所示 化合物之濃度相對於光阻剝離劑全量 宜為0.01重量%~25重 里%更且為0.1重量%〜15重量%,且尤宜為1.0重量%~10 重量%。於上述範阇 已阁中’從防蝕效果、基板洗淨時間及洗 淨廢^里(環^負擔)的觀點看來甚適宜。 了有光阻刻離性能之化合物濃度相對於光阻剝離劑全 里且為1重量α 更夏% ’更宜為5重量重量%,尤宜 為10重量%〜75重量%。 使用水 機溶劑或該等之混合溶劑來調製本發明之 光阻剝離液時,可將 _ 村用ϊ適當調節成令前述式(Α1)、式(Β1) —)斤不化合物濃度及具光阻剝離性能之化合物濃度 落在上述範圍内。 別达含量之光阻剝離劑或光阻剝離液可 使防蝕效果維持声 又野’同時,例如於前述光阻剝離步驟中, 32 200916607 可更有效率地從基板去除欲光阻剝離之膜及钱刻殘清。本 發明之光阻剝離劑或光阻剝離液特別是在金屬膜或金屬配 線之素材為銅時,顯示出優異之防蝕效果。 <取代_化合物或其衍生物之回收> 5 再者,舉例而言,可藉抽提、過濾、濃縮'蒸鶴、管 層析等-般方法,從前述姐義步料収回收之廢 ㈣收料㈣龍分之本願發明之取代難合物或其衍 生物。 <防蝕性能之評估方法> 1〇 接著’就本發明之式(A1)、式(B1)及式(C1)所示化合物 之杈佳使用用途之一,即前述光阻剥離步驟等可使用之光 阻剝離液的調製法及其防蝕性能的評估方法例示如下,並 說明其順序。 1. 將市售金屬箔、金屬板或金屬線等用作試驗用金屬 I5片,依序崎性水雜、紐水溶社鱗洗淨金屬表面 , 以進行前置處理,乾燥後進行秤量。 V > 2. 以選自本發明式(A1)、式(B1)或式(C1)所示化合物中 之至少1種化合物作為防蝕劑成分,烷醇胺作為光阻剝離劑 成分,與水(依情況添加有機溶劑)混合而調製出光阻剝離 - 20 液。 3. 將调製出之光阻剝離液設定在例如可實施光阻剝離 步驟等之温度,接著將試驗用金屬片浸潰於該溶液中,一 定時間後取出試驗用金屬片,例如以感應耦合電漿質譜分 析法(Inductively Coupled Plasma Mass Spectrometry、 33 200916607 ICP-MS)等之方法測定溶出至光阻剝離液中之金屬量(濃 度)。 4.從溶出之金屬量(濃度)的測定值,以下列數學式[I] 將金屬腐蝕程度作為侵蝕度值算出,進行定量評估。 5 [數 1] 數學式[I] 侵姓度值(ppb/mg)=溶出之金屬濃度(ppb)/試驗前之金 屬重量(mg) 該侵蝕度值之越小表示防蝕效果越佳。此外,使用具 10 有相同效果之苯并三唑作為對照化合物,侵蝕度值更小者 即可判斷是具有迄今所無之優異防蚀效果的化合物。 以下,藉由實施例而更具體地說明本發明。 實施例 <實施例A : /3-酮基酯化合物> 15 實施例A-1 (調製試驗用光阻剝離溶液;(4-曱基-3-側氧基-戊酸乙酯) 於2-胺基乙醇與超純水之混合液(重量比:3/l)40g中, 將用作防蝕劑之4-甲基-3-側氧基-戊酸乙酯2g於室溫下混 合,調製出試驗用剝離劑。 20 實施例A-2 (側定侵蚀度:4-曱基-3-側氧基-戊酸乙酯) 將市售銅線(重量:1900mg)以50°C浸潰於lwt%氫氧化 鈉水溶液1分鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,以進行銅箔之前置處理。接著,將該銅箔以 34 200916607 70°C浸潰於實施例A-l製作出之試驗用剝離劑,放置1小 時。之後,從試驗用剝離劑去除銅箔,以感應耦合電漿質 譜分析法(ICP-MS)測定已溶解之銅濃度。以前述數學式(I) 將測定值作為侵姓度值表示,為1 · 8ppb/mg。 5 此外,更同樣地進行2次侵#度測定,各自為1.6ppb/mg 及1.9ppb/mg,3次之平均值為1.8ppb/mg。 實施例A-3 (調製試驗用光阻剝離溶液;3-側氧基-丁酸苄基酯) 於2-胺基乙醇與超純水之混合液(重量比:3/l)40g中, 10 以室溫混合防蝕劑成分之3-側氧基-丁酸苄基酯2g,調製出 試驗用光阻剝離溶液。 實施例A-4 (測定侵蝕度:3-側氧基-丁酸苄基酯) 將市售銅線(重量:1900mg)以50°C浸潰於lwt%氫氧化 15 鈉水溶液1分鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以70 °C浸潰於實施例A-3製作之試驗用光阻剝離劑,攪拌1小 時。之後,從試驗用光阻剝離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 20 (I)將測定值作為侵#度值表示,為2.2ppb/mg。 此外,同樣地更進行2次侵#度測定,各為1.9ppb/mg 及2.1ppb/mg,3次平均值為 2.1ppb/mg。 實施例A-5 (調製試驗用光阻剝離溶液:3-側氧基-丁酸(3-甲基丁酯)) 35 200916607 於2-胺基乙醇與超純水之混合液(重量比:3/l)40g中, 以室溫混合防蝕劑成分之3-側氧基-丁酸(3-甲基丁酯)2g,調 製出試驗用光阻剝離溶液。 實施例A-6 5 (測定侵蝕度:3-側氧基-丁酸(3-甲基丁酯)) 將市售銅線(重量:1900mg)以50°C浸潰於lwt%氫氧化 鈉水溶液1分鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以70 °C浸潰於實施例A-5製作之試驗用光阻剝離劑,攪拌1小 10 時。之後,從試驗用光阻剝離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 (I)將測定值作為侵#度值表示,為2.7ppb/mg。 此外,同樣地更進行2次侵蚀度測定,各為2.5ppb/mg 及 1.6ppb/mg,3次平均值為2.3ppb/mg。 15 實施例A-7 (調製試驗用光阻剝離溶液;3-側氧基-丁酸異丁酯) 於2-胺基乙醇與超純水之混合液(重量比:3/l)40g中, 以室溫混合防蝕劑成分之3-側氧基-丁酸異丁酯2g,調製出 試驗用光阻剝離溶液。 20 實施例A-8 (測定侵蝕度:3-側氧基-丁酸異丁酯) 將市售銅線(重量:1900mg)以50°C浸潰於lwt%氫氧化 鈉水溶液1分鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以70 36 200916607 °C浸潰於實施例A-7製作之試驗用光阻剝離劑,攪拌1小 時。之後,從試驗用光阻剝離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 (I)將測定值作為侵#度值表示,為3.0ppb/mg。 5 此外,同樣地更進行2次侵蚀度測定,各為2.4ppb/mg 及 1.8ppb/mg,3次平均值為2.4ppb/mg。 實施例A-9 (調製試驗用光阻剝離溶液:3-側氧基-3-苯基-丁酸乙酯) 於2-胺基乙醇與超純水之混合液(重量比:3/l)40g中, 10 以室溫混合防蝕劑成分之3-側氧基-3-苯基-丁酸乙酯2g,調 製出試驗用光阻剝離溶液。 實施例A-10 (測定侵蝕度·· 3-側氧基-3-苯基-丁酸乙酯) 將市售銅線(重量:1900mg)以50°C浸潰於lwt%氫氧化 15 鈉水溶液1分鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以70 °C浸潰於實施例A-9製作之試驗用光阻剝離劑,攪拌1小 時。之後,從試驗用光阻剝離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 20 (I)將測定值作為侵钱度值表示,為3.2ppb/mg。 此外,同樣地更進行2次侵独度測定,各為1.4ppb/mg 及2.6ppb/mg,3次平均值為2.4ppb/mg。 實施例A-11 (調製試驗用光阻剝離溶液:2-侧氧基-丙烷-1, 3-二羧酸二 37 200916607 於2-胺基乙醇與超純水之混合液(重量比:3/1)4〇g中, 以室溫混合防蝕劑成分之2-側氧基、丙烷d,3_二羧酸二甲 酯2g,調製出試驗用光阻剝離溶液。 5 實施例A-12 (測定侵蝕度:2-側氧基-丙烷_1,3_二鲮酸二甲酯) 將市售銅線(重量:190〇mg)以5(rc浸潰於lwt%氣氧化 鈉水溶液1分鐘、lwt%硫酸水溶液丨分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以7〇 1〇 C浸潰於實施例A-11製作之試驗用光阻剝離劑,攪拌Wherein 'R1 to R7 and η are synonymous with the above. In the amine olefinamide compound represented by the formula (C1) of the present invention, R2 is a hydrogen atom and a hydrocarbon group which may have a substituent, and R6 is a hydrogen atom or a hydrocarbon group which may optionally have a substituent. η is the number of anthracene groups and represents an integer from 2 to 6. η is preferably 2 to 4 15 and more preferably 2. As described above, the raw material of the amino olefinamide compound represented by the formula (C2) in the above reaction formula [2] can be exemplified by the compound of the 5-keto group S represented by the formula (Α1), r2 or R3. Any one is a hydrogen atom. Further, as the ketone ester compound of the starting material represented by the formula (C2), a commercially available product can be used as it is. Further, a commercially available product can be obtained by, for example, Bul1. Soc. Chem. Japan" Vol_62 4072 (1989), etc., to obtain a 2-modified compound of the /3-ketoester compound. The above reaction formula [3] The raw material 25 of the amine oxime amide compound represented by the formula (C4) is a hydrogen atom of the ketone oxime compound represented by the above formula (B1), wherein the caliper 2 or & 3 is a hydrogen atom. A commercially available product can be directly used as the ketone decylamine compound of the starting material (C4). Alternatively, those not commercially available may be synthesized and used according to the above reaction formula π]. 5 % (C3) Amine can be scaled as 2_aminoethanol, diolamine, N-ethylaminoethanol, N-methylaminoethanol, N-methyldiethanolamine: dimercaptoethanol, 2_(2 amine Further, the anthracylamine may be used as an organic solution such as a salt of a hydrochloride or an ethanol solution, etc. - Aminoethanol, diethanolamine or N-methylaminoethanol. Commercially available products can be used as the above-mentioned alkanolamine. In addition, those without a commercial product can refer to 曰本特开2004-275933 and Synlett., (9) 1374-1378 (2006 ), the other synthetic use. 15, the amount of pre-Wei coffee (four) in · 2) (4) ketone-based compound or formula (4) compound 丨 Mo Er, Yi Tao $ Mo Er, Mo and 1.0 Mo ~ Mo More preferably, it is 2 moles to 1 mole. The amine olefin amine compound represented by the above formula (C1) is a ketone oxime compound represented by the formula (C2) or a keto oxime compound represented by the formula (C4). The product of the above-mentioned formula (C1) is usually produced by a method in which the oxime amine is mixed in the presence or absence of the lanthanum, for example, by a reaction such as a reaction. In the absence of a solvent, the ridge can be used for the purpose of improving the solubility of the raw materials used, etc. The solvent used is not particularly limited, but for example, 26 200916607 The following solvents are suitable for use. Halogenated aromatic hydrocarbons such as aromatic hydrocarbons such as benzene, toluene, xylene and cumene; chlorobenzene, 1,2-dichlorobenzene, 1,3-diphenylbenzene, and 1,4-diphenylbenzene; Nitrobenzenes such as nitrobenzene and nitromethane; amides such as N,N-dimercaptocaramine, N, N-5 dimercaptoacetamide, N-methyl-2-pyrrolidone ;1,3-dimethyl-2 -Ureas such as imidazolidinone and 1, 3-diisopropyl-2-imidazolidinone; isopropyl ether, 1,2-dimethoxyethane, diethylene glycol monomethyl ether, diethylene glycol Chain or branched ethers such as monoethyl ether and diethylene glycol monobutyl ether; ether derivatives of cyclic ethers such as dioxane and tetrahydrofuran; and hydrazines such as dimethyl sulfoxide; dimethyl hydrazine;飒10; carbon disulfide; and water, etc. Among these solvents, guanamines, sulfoxides and ureas are preferred, and N, N-dimercaptocaramine, N, N-didecyl hydrazine Amine, N-methyl-2-pyrrolidone, dimethyl sulfoxide and 1,3-dimethyl-2-imidazolidinone are more preferred. Further, these solvents may be used singly or in combination of two or more. The amount of the solvent is preferably 0.01 to 100 ml, more preferably 0.02 to 20 m, more preferably 0.03 to the ketoester compound represented by the formula (C2) or the ketone ketone amide compound lg of the formula 15 (C4). 5·0πύ. The reaction temperature is preferably -20 to 100 ° C, more preferably -10 to 80 ° C, and particularly preferably 0 to 60 ° C. Further, the reaction pressure is not particularly limited, but it can be carried out by distilling off the alcohol or water (R7〇H, formula (C5)) produced by the reaction under reduced pressure. Further, the production method of the present invention can be carried out in the air, but it is preferably carried out in an inert gas such as nitrogen or argon. By the reaction of the present invention, the amine olefinamide compound represented by the formula (C1) can also be obtained in the form of a crude substance, but at this time, after the reaction, by, for example, neutralization, extraction, filtration, concentration, distillation, Recrystallization, crystallization, column chromatography, etc., were isolated and purified by a method of 27, 2009,607. The above-described formula (ci) is a compound of the formula (ci), which is represented by the formula (ci), which is represented by the formula (4), and the above formula (referred to as the (four) group. Among the compounds exemplified as the compound, a compound obtained by using a compound material of any of r2 2 R as a hydrogen atom. <Formation of the anti-surge agent> The use of the anti-corrosion treatment liquid and the anti-button preservation liquid is not particularly limited. For the above-mentioned applications, for example, copper, or such alloys used in a process such as a semiconductor integrated circuit and a printed circuit board are used. The metal film, the metal wiring, or the constituent component having one or more kinds of copper and aluminum are included in the composition. The preferred use of the anti-surge agent of the present invention may be, for example, a metal film used on a semiconductor substrate (especially It is a step of the anti-surname processing of the copper film. 15 Further, in terms of the preferred use of the anti-money treatment liquid of the present invention, for example, the method of applying copper, aluminum or the alloy circuit is applied. In the cleaning step of the LSI substrate or the printed circuit board, or the rinsing step of the CMP weaving, etc. For the purpose of anti-money treatment, the use of the anti-chain preservation solution of the present invention may be, for example, a surface treatment of a metal film or a storage solution of a semiconductor wafer after processing the circuit substrate in a CMp process, etc. The anti-thaw treatment is used for the purpose, and the best one is, for example, the case where the metal crucible or the circuit uses copper in the above case. The anti-surplus agent of the present invention can directly use the above formula (A1), The compound of the formula (B1) and the formula (3) may be used alone, or two or more of these compounds may be mixed and used in the application of 28 200916607. Further, for example, the agent may also be treated with water and/or an organic solvent as an anti-corrosion treatment. Liquid or anti-corrosion preservation solution. In addition, it may be mixed with an acid or a base which does not decompose the compound, pH adjustment to improve water solubility, or to prevent degradation of the corrosion inhibitor itself, 5 mixing of an oxidizing agent, etc., depending on the conditions of use and It is used as an anti-corrosion agent, an anti-corrosion treatment liquid and an anti-corrosion preservation liquid for use as an additive. The organic solvent usable in the anti-corrosion agent type only needs to be of the formula (A1), formula (B1) and formula (C) of the present invention. 1) The compound shown may be reacted without particular limitation. Suitable solvents include aromatic hydrocarbons such as benzene, toluene, diphenylbenzene and isopropyl 10 benzene; chlorobenzene, 1,2-di Halogenated aromatic hydrocarbons such as chlorobenzene, 1,3-dichlorobenzene and 1, 4-dichlorobenzene; nitrophenylnitrile aromatic hydrocarbons; quinones such as dimethyl sulfoxide; dimethyl sulfone , sulfones such as diethyl hydrazine, bis(2-hydroxyethyl) sulfone and tetradecyl sulfone; hydrazine, hydrazine-dimethylformamide, hydrazine, hydrazine-diethylacetamide, hydrazine- Amidoxime such as methyl-2-pyrrolidone, anthracene-hydroxyindol-2-pyrrolidone and anthraquinone-hydroxyethyl 15-yl-2-pyrrolidone; 1, 3-dimethyl-2-imidazolidinone, 1 , 3-diethyl-2-imidazolidinone and urea such as 1,3-diisopropyl-2-imidazolidinone; isopropyl bond, 1,2-dimethoxyethane, bisaki, a bond such as tetrazo-α-fusan; an alcohol such as methanol, ethanol, n-propanol, n-butanol, isopropanol or ethylene glycol; ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol monobutyl Ether, diethylene glycol, diethylene glycol monoterpene ether, diethylene glycol monoethyl ether and diethylene glycol monobutyl ether, ethylene glycol dimethyl ether, ethylene glycol monoterpene ether Esters of polyhydric alcohols, ethylene glycol monoethyl ether acetate and the like ether or ester derivatives. Further, these organic solvents may be used singly or in combination of two or more. Among these organic solvents, lower alcohols, sulfoxides and ureas are preferred, 29 200916607 and ethanol, n-propanol, n-butanol, isopropanol, dimercapto sulfoxide and 1,3-dimethyl -2-Mi. It is better to sit on the ketone. In the corrosion inhibitor of the present invention, the concentration of the compound represented by the formula (A1), the formula (B1) and the formula (C1) can be appropriately set depending on the use and purpose, but it is preferably 〇·〇1% by mass to 805% by mass. It is preferably from 1% by mass to 60% by mass, and particularly preferably from 1.0% by mass to 40% by mass. Further, when it is mixed with a compounding agent such as a pH adjusting agent or an antioxidant, compatibility with the compounding agent and/or dispersibility should be considered. In the anticorrosive treatment liquid of the present invention, the concentration of the compound represented by the formula (A1), the formula (B1) and the formula (C1) can be appropriately set depending on the use and purpose, but for example, 10 is used for the substrate on which the metal wiring is formed. The cleaning treatment and the anti-corrosion treatment are preferably 0.01% by mass to 80% by mass, more preferably (u% by mass to 6% by mass%, and particularly preferably 1.0% by mass to 40% by mass. The anticorrosive treatment liquid of the present invention) In the above range, it is preferable from the viewpoints of the anti-corrosion effect, the substrate cleaning time, and the amount of the washing waste liquid (environmental burden). Further, for example, the anti-corrosion treatment liquid 15 of the present invention may be used in addition to the foregoing. In the rinsing step after the CMP process or the CMP process, for example, the cleaning process of the anti-corrosion preservation solution of the present invention can be temporarily used as a solution for holding the wafer between the cleaning process for removing the abrasive particles and the like. 2. In the corrosion protection liquid of the present invention, the spread/index of the δ substance represented by the formula (A1), the formula (B1) and the formula (C1) may be appropriately set depending on the purpose and purpose, but is preferably 〇(1)% by mass. ~80% by mass, more preferably ai mass%~6〇% by mass 'and especially ι When the corrosion protection liquid of the present invention is in the above range, it is preferable from the viewpoints of the anti-corrosion effect, the anti-abrasive time of 30 200916607 2, and the amount of the waste liquid to be washed (environmentally negative milk, etc.) When the material of the metal film or the metal circuit is copper, the corrosion protection liquid of the present invention exhibits a better anti-corrosion effect. < Release agent form> The formula (A1), formula (B1) and formula (C1 of the present invention) The compound shown, for example, may be prepared by a method such as a compound having a photoresist stripping property such as an alkoxylamine (2. amino alcohol or the like) to prepare a light having both anti-surge property and photoresist peeling property. Further, the compound of the formula (Al), the formula (B1) and the formula (Cl) may be used in combination of two or more kinds. In the present invention, the "photoresist stripper" is used. Refers to: the anti-corrosion of the pre-recorded metal species, and for example, the photoresist stripping step when the printed substrate is used is used to strip excess photoresist film and various debris from the article containing the photoresist film. The agent having the aforementioned peeling property may, for example, be a hydroxyl group. Or an alkanol 15 amine or a hydrogen fluoride salt, etc., but preferably an alkanolamine. Specifically, the aforementioned alkanolamine compound may, for example, be 2-aminoethanol, diethanolamine, N-ethylaminoethanol, N _ mercaptoaminoethanol, N-methyldiethanolamine, dimethylaminoethanol, 2-(2-aminoethoxy)ethanol, amidino-2-propanol, diethanolamine, etc., and preferably 2 _ Aminoethanol, diethanolamine, ν-μ methylaminoethanol. For example, the photoresist stripper of the present invention may be added with an antioxidant for the purpose of preventing deterioration of the release agent itself, or for the purpose of improving solubility. Further, an amphiphilic compound or a rhomodulating agent which is miscible with an acid, a base, water, an organic solvent or other compounding component is added. 31 200916607 In addition, the photoresist stripper can be used to prepare a photoresist stripping solution by using water, an organic solvent or a mixed solvent thereof, thereby being used for the photoresist stripping step in the same manner as the above-mentioned photoresist stripping agent. Various wastes and residues are used for photoresist stripping. 5 10 15 20 The photoresist stripper having anti-corrosion property of the present invention can be prepared by mixing only the compounds of the formula (A1), the formula (B1) and the formula (Cl), which are compounded with a photoresist stripping energy. For example, nitrogen may be used as a photoresist stripper by using water, an organic solvent or a mixed solution of the above. Further, the organic solvent used is synonymous with the money solvent which can be used for preparing the above-mentioned anti-surname agent and the anti-removal solution and the anti-dumping liquid using the same. The light of the hair of the month and the formula of the formula (3) and the formula (the formula (3) is preferably 0.01% by weight to 255% by weight and more preferably 0.1% by weight to 15% by weight relative to the total amount of the photoresist stripper. %, and particularly preferably from 1.0% by weight to 10% by weight. It is quite suitable from the viewpoints of anti-corrosion effect, substrate cleaning time, and cleaning waste (circle ^ burden) in the above-mentioned Fan Yige. The concentration of the compound having the photoresist etch-off property is more than 5% by weight, more preferably from 5% by weight to 75% by weight, based on the total amount of the resist release agent, and is preferably from 10% by weight to 75% by weight. When the solvent is mixed to prepare the photoresist stripper of the present invention, the ϊ ϊ ϊ can be appropriately adjusted to the concentration of the compound of the above formula (Α1), formula (Β1)-), and the compound having the photoresist stripping property. It falls within the above range. The photoresist or stripper can reach the sound and the effect of the anti-corrosion effect. At the same time, for example, in the above-mentioned photoresist stripping step, 32 200916607 can more effectively remove the substrate from the substrate. The film of the photoresist is peeled off and the residue is removed. The photoresist stripping of the present invention The agent or the photoresist stripping liquid exhibits an excellent anticorrosive effect especially when the material of the metal film or the metal wiring is copper. <Recycling of a compound or a derivative thereof> 5 Further, for example, Extracting, filtering, and concentrating 'steamed crane, tube chromatography, etc.--the method of recovering the waste from the above-mentioned sister's step materials (4) receiving materials (4) Longzhizhi's intention to replace the difficult compound or its derivative. <Anti-corrosion Method for evaluating performance> One of the preferred uses of the compound of the formula (A1), the formula (B1) and the formula (C1) of the present invention, that is, the light which can be used in the above-mentioned photoresist peeling step or the like The method for preparing the resist stripping solution and the method for evaluating the corrosion resistance are exemplified as follows, and the order thereof is explained. 1. A commercially available metal foil, a metal plate or a metal wire is used as the test metal I5 sheet, which is in accordance with the order of the water, The water-repellent material surface is washed with a metal surface for pre-treatment, and is dried and weighed. V > 2. at least one selected from the compounds of the formula (A1), formula (B1) or formula (C1) of the present invention. 1 compound as a corrosion inhibitor component, alkanolamine as a photoresist stripper component, and water The organic solvent is mixed and mixed to prepare a photoresist stripping solution - 20. The prepared photoresist stripping solution is set to, for example, a temperature at which a photoresist stripping step can be performed, and then the test metal sheet is immersed in the solution. After taking a test piece of metal for a certain period of time, the amount of metal (concentration) eluted into the resist stripper is measured by, for example, Inductively Coupled Plasma Mass Spectrometry (33 200916607 ICP-MS). 4. From the measured value of the amount (concentration) of the eluted metal, the metal corrosion degree is calculated as the erosion degree value by the following mathematical formula [I], and quantitative evaluation is performed. 5 [Number 1] Mathematical formula [I] Invasiveness value (ppb/mg) = dissolved metal concentration (ppb) / metal weight before test (mg) The smaller the corrosion degree value, the better the corrosion prevention effect. Further, using a benzotriazole having the same effect as a control compound, a compound having a smaller degree of corrosion can be judged to be a compound having an excellent anticorrosive effect which has hitherto not been obtained. Hereinafter, the present invention will be more specifically described by way of examples. EXAMPLES <Example A: /3-ketoester compound> 15 Example A-1 (Photoresist stripping solution for preparation test; (4-mercapto-3-latyloxy-pentanoic acid ethyl ester) 2 g of 4-methyl-3-oxo-pentanoic acid ethyl ester used as an anticorrosive agent in a mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/l), mixed at room temperature The test stripper was prepared. 20 Example A-2 (Side degree of erosion: 4-mercapto-3-oxo-pentanoic acid ethyl ester) Commercially available copper wire (weight: 1900 mg) at 50 ° C After immersing in lwt% sodium hydroxide aqueous solution for 1 minute and lwt% sulfuric acid aqueous solution for 1 minute, it was washed with ultrapure water and then dried to carry out copper foil pretreatment. Next, the copper foil was 34 200916607 70°. C was immersed in the test release agent prepared in Example A and allowed to stand for 1 hour. Thereafter, the copper foil was removed from the test release agent, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value is expressed as the invasiveness value by the above formula (I), and is 1·8 ppb/mg. 5 Further, the intrusion degree is measured twice, and each is 1.6 ppb/mg and 1.9 ppb/mg. Average of 3 times 1.8 ppb/mg. Example A-3 (Resistance stripping solution for preparation test; 3-sideoxy-benzyl butyrate) Mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/) l) 40g, 10 parts of 3-layer oxy-butyric acid benzyl ester of the corrosion inhibitor component were mixed at room temperature to prepare a photoresist stripping solution for the test. Example A-4 (Measurement of corrosion degree: 3-side oxygen Base-butyric acid benzyl ester) Commercially available copper wire (weight: 1900 mg) was immersed in a 1 wt% aqueous solution of 15% sodium hydroxide for 1 minute, 1 wt% aqueous sulfuric acid solution for 1 minute at 50 ° C, and then washed with ultrapure water. The copper wire was dried and subjected to a copper wire pretreatment. Then, the copper wire was immersed in the test photoresist release agent prepared in Example A-3 at 70 ° C, and stirred for 1 hour. Thereafter, the film was peeled off from the test. The copper wire was removed by the agent, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value was expressed as the invading value according to the above formula 20 (I), which was 2.2 ppb/mg. Similarly, two intrusion measurements were performed, each of which was 1.9 ppb/mg and 2.1 ppb/mg, and the average of three times was 2.1 ppb/mg. Example A-5 (Resistance stripping solution for modulation test: 3-side) oxygen -butyric acid (3-methylbutyl ester)) 35 200916607 In a mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/l) 40g, the 3-side oxygen of the corrosion inhibitor component is mixed at room temperature. 2 g of butyl-butyric acid (3-methylbutyl ester) to prepare a photoresist stripping solution for the test. Example A-6 5 (Determination of corrosion: 3-sided oxy-butyric acid (3-methylbutyl ester) The commercially available copper wire (weight: 1900 mg) was immersed in a lwt% sodium hydroxide aqueous solution at 50 ° C for 1 minute, and a lwt% sulfuric acid aqueous solution was used for 1 minute, and then washed with ultrapure water and then dried to carry out copper wire. Set processing. Next, the copper wire was immersed in the test photoresist release agent prepared in Example A-5 at 70 ° C, and stirred for 1 hour and 10 hours. Thereafter, the copper wire was removed from the test photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value is expressed as the invasive value according to the above formula (I) and is 2.7 ppb/mg. Further, in the same manner, the degree of erosion measurement was further performed twice, each of which was 2.5 ppb/mg and 1.6 ppb/mg, and the average value of the third time was 2.3 ppb/mg. 15 Example A-7 (Photoresist stripping solution for preparation test; 3-sideoxy-isobutyl butyrate) 40 g of a mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/l) The test resist resist stripping solution was prepared by mixing 2 g of 3-oxyloxy-butyrate isobutylate of the corrosion inhibitor component at room temperature. 20 Example A-8 (Determination of erosion: 3-sided oxy-isobutyl butyrate) Commercially available copper wire (weight: 1900 mg) was immersed in a 1 wt% sodium hydroxide aqueous solution at 50 ° C for 1 minute, lwt After 1 minute of the sulfuric acid aqueous solution, it was washed with ultrapure water and dried, and the copper wire was pretreated. Next, the copper wire was immersed in the test photoresist stripper prepared in Example A-7 at 70 36 200916607 °C, and stirred for 1 hour. Thereafter, the copper wire was removed from the test photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value is expressed as the invading value according to the above formula (I) and is 3.0 ppb/mg. 5 In addition, the degree of erosion measurement was further performed twice, each of 2.4 ppb/mg and 1.8 ppb/mg, and the average of three times was 2.4 ppb/mg. Example A-9 (Photoresist stripping solution for preparation test: 3-sided oxy-3-phenyl-butyric acid ethyl ester) A mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/l In 40 g, 10 g of 3-oxooxy-3-phenyl-butyric acid ethyl ester of the corrosion inhibitor component was mixed at room temperature to prepare a photoresist stripping solution for testing. Example A-10 (Measurement of Degree of Erosion · 3-Phenoxy-3-phenyl-butyrate Ethyl Ester) A commercially available copper wire (weight: 1900 mg) was impregnated at 50 ° C in 1 wt% of sodium hydroxide hydroxide After the aqueous solution was dried for 1 minute and 1 wt% sulfuric acid aqueous solution for 1 minute, it was washed with ultrapure water and dried, and the copper wire was pretreated. Next, the copper wire was immersed in the test photoresist release agent prepared in Example A-9 at 70 ° C, and stirred for 1 hour. Thereafter, the copper wire was removed from the test photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value is expressed as the invasiveness value according to the above formula 20 (I) and is 3.2 ppb/mg. Further, in the same manner, the degree of aggression was measured twice, each of which was 1.4 ppb/mg and 2.6 ppb/mg, and the average value of the third time was 2.4 ppb/mg. Example A-11 (Resistance stripping solution for preparation test: 2-sided oxy-propane-1, 3-dicarboxylic acid II 37 200916607 A mixture of 2-aminoethanol and ultrapure water (weight ratio: 3 /1) In 4 〇g, 2 g of an anticorrosive component and 2 g of propane d,3-dicarboxylic acid dimethyl ester were mixed at room temperature to prepare a photoresist stripping solution for testing. 5 Example A-12 (Measurement of degree of erosion: 2-sided oxy-propane-1, dimethyl phthalate) Commercially available copper wire (weight: 190 〇 mg) was immersed in 1 wt% of sodium sulphate solution After a minute and 1 wt% aqueous sulfuric acid solution, the mixture was washed with ultrapure water and dried to carry out copper wire pretreatment. Then, the copper wire was impregnated at 7〇1〇C in Example A-11. Test photoresist stripper, stirring
時。之後,從試驗用光阻剥離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 (I)將測定值作為侵蝕度值表示,為26ppb/mgD 此外’同樣地更進行2次侵蝕度測定,各為2.8ppb/mg 15 及2.5PPb/mg ’ 3次平均值為2_6PPb/mg。 實施例A-13 (調製試驗用光阻剥離溶液:4, 4_二甲基_3_侧氧基_戊酸曱 酯) 於2_胺基乙醇與超純水之混合液(重量比:3/l)40g中, 2〇以室溫混合防蝕劑成分之4, 4-二甲基-3-側氧基-戊酸甲酯 2g,調製出試驗用光阻剝離溶液。 實施例A-14 (測定侵蝕度:4,4-二甲基_3_側氧基_戊酸甲酯) 將市售銅線(重量:1900mg)以50°C浸潰於lwt%氫氧化 38 200916607 鈉水溶液1分鐘、lwt%硫酸水溶液i分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以7〇 C浸潰於實施例A-13製作之試驗用光阻剝離劑,攪拌pj、 時。之後,從試驗用光阻剝離劑去除銅線,以感應耦合電 5漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 ⑴將測定值作為侵蝕度值表示,為丨8ppb/mg。 實施例A-15 (調製試驗用光阻剝離溶液:2_甲基_3_侧氧基_丁酸乙酯) 於2-胺基乙醇與超純水之混合液(重量比:3/1)4〇g中, 10以室溫混合防蝕劑成分之2-甲基-3-側氡基-丁酸乙酯2g ,調 製出試驗用光阻剝離溶液。 實施例A-16 (測定侵蝕度:2-甲基-3-側氧基-丁酸乙酯) 將市售銅線(重量:1900mg)以50。(:浸潰於lwt%氫氧化 15鈉水溶液1分鐘、iwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以7〇 C浸潰於實施例a-15製作之試驗用光阻剝離劑,攪拌lj、 日^ °之後’從試驗用光阻剝離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 20⑴將測定值作為侵蝕度值表示,為2.3ppb/mg。 此外,同樣地更進行2次侵蝕度測定,各為i.8ppb/mg 及2.3ppb/mg ’ 3次平均值為2.lppb/mg。 實施例A-17 (調製試驗用光阻剝離溶液:2_苄基_3_側氧基_丁酸乙酯) 39 200916607 於2-胺基乙醇30g與超純水10g之混合液中,以室溫混 合防蝕劑成分之2-苄基-3-側氧基-丁酸乙酯2g,調製出試驗 用光阻剝離溶液。 實施例A-18 5 (測定侵蝕度:2-苄基-3-側氧基-丁酸乙酯) 將市售銅線(重量:1900mg)以50°C浸潰於lwt%氫氧化 鈉水溶液1分鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以70 °C浸潰於實施例A-17製作之試驗用光阻剝離劑,攪拌1小 10 時。之後,從試驗用光阻剝離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 ⑴將測定值作為侵姓度值表示,為2.0ppb/mg。 此外,同樣地更進行2次侵蝕度測定,各為2.8ppb/mg 及3.2ppb/mg,3次平均值為2.7ppb/mg。 15 實施例A-19 (回收2-苄基-3-側氧基酪酸乙酯) 於實施例A-18所用光阻剝離液中投入乙酸乙酯,分液 並抽提有機層。將所得有機層使用無水硫酸鈉乾燥、過濾 後餾除溶劑,可以混合物形式回收2-苄基-3-側氧基酪酸乙 20 酯及2-胺基乙醇。 <實施例B; /3-酮基醯胺化合物> 實施例B-1 (合成N-(2-羥乙基)-4, 4-二甲基-3-側氧基-戊醯胺) 於氮氣環境下,於50ml茄型燒瓶中混合4, 4-二甲基-3- 40 200916607 側氧基-戊酸甲酯15.82g(100mmol)與2-胺基乙醇 9.16g(150mmol),一邊維持30°C以下之溫度一邊授拌16小 時。反應結束後濃縮反應液,使所得黃色油狀濃縮物以二 氧化矽凝膠管柱層析儀(溶出液:乙酸乙酯)純化,而製得無 5 色油狀之N-(2-羥乙基)-4, 4-二曱基-3-側氧基-戊醯胺 10.96g(收率:59%)。 所得前述化合物之分析數據係如下所示。 1 H-NMR spectrum(300MHz » CDC13) (5 ppm ; 1.18(s > 9H),3.07(t,1H,J=5.4Hz),3.42〜3.47(m,2H),3.52(s, 10 2H),3.70〜3.75(m,2H),7.48(brs,1H).Time. Thereafter, the copper wire was removed from the test photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). According to the above formula (I), the measured value is expressed as the degree of erosion, and is 26 ppb/mgD. In addition, the measurement of the degree of erosion is performed twice, and each of them is 2.8 ppb/mg 15 and 2.5 PPb/mg. 2_6PPb/mg. Example A-13 (Resistance stripping solution for preparation test: 4,4-dimethyl- 3_sideoxy-pivalate) A mixture of 2-aminoethanol and ultrapure water (weight ratio: 3 / l) 40 g of 2, 4-dimethyl-3-oxo-pentanoic acid methyl ester 2 g of an anticorrosive component was mixed at room temperature to prepare a photoresist stripping solution for testing. Example A-14 (Measurement of Degree of Erosion: 4,4-Dimethyl_3_Phenoxy-Pentanoate) A commercially available copper wire (weight: 1900 mg) was impregnated at 50 ° C in 1 wt% NaOH 38 200916607 After a minute of sodium solution and 1 wt% aqueous sulfuric acid solution, it was washed with ultrapure water and dried, and the copper wire was pretreated. Next, the copper wire was immersed in the test photoresist release agent prepared in Example A-13 at 7 〇 C, and pj was stirred. Thereafter, the copper wire was removed from the test photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value is expressed as the degree of erosion according to the above mathematical formula (1) and is 丨8 ppb/mg. Example A-15 (Resistance stripping solution for preparation test: 2_methyl_3_sideoxy-butyric acid ethyl ester) A mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/1) In 4 〇g, 10 g of 2-methyl-3-nonanthracene-butyrate ethyl ester of the corrosion inhibitor component was mixed at room temperature to prepare a photoresist stripping solution for testing. Example A-16 (Measurement of corrosion degree: 2-methyl-3-oxooxy-ethyl butyrate) Commercially available copper wire (weight: 1900 mg) was 50. (: After immersing in a lwt% aqueous solution of 15% sodium hydroxide for 1 minute and an aqueous solution of iwt% sulfuric acid for 1 minute, it was washed with ultrapure water and dried to carry out copper wire pretreatment. Next, the copper wire was 7〇. C was immersed in the test photoresist stripper prepared in Example a-15, and after stirring lj, day ^°, 'copper wire was removed from the test photoresist stripper to inductively coupled plasma mass spectrometry (ICP-MS) The dissolved copper concentration was measured, and the measured value was expressed as the degree of erosion according to the above formula 20 (1), and was 2.3 ppb/mg. Further, the etching degree was measured twice, and each was i.8 ppb/mg and 2.3 ppb/mg. 'The average value of 3 times is 2.lppb/mg. Example A-17 (Resistance stripping solution for preparation test: 2_benzyl_3_sideoxy-ethyl butyrate) 39 200916607 In 2-aminoethanol In a mixed liquid of 30 g and 10 g of ultrapure water, 2 g of 2-benzyl-3-oxo-butyric acid ethyl ester as an anticorrosive component was mixed at room temperature to prepare a photoresist stripping solution for testing. Example A-18 5 (Isolation degree of corrosion: 2-benzyl-3-oxo-butyric acid ethyl ester) Commercially available copper wire (weight: 1900 mg) was immersed in a 1 wt% sodium hydroxide aqueous solution at 50 ° C for 1 minute, lwt% After the sulfuric acid aqueous solution was washed for 1 minute, it was washed with ultrapure water and then dried to carry out copper wire pretreatment. Then, the copper wire was immersed at 70 ° C in the test photoresist stripper prepared in Example A-17. After stirring for 1 hour and 10 hours, the copper wire was removed from the test photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value was used as the invading name according to the above mathematical formula (1). The degree value is 2.0 ppb/mg. Further, the etching degree measurement is performed twice in the same manner, each of which is 2.8 ppb/mg and 3.2 ppb/mg, and the third average value is 2.7 ppb/mg. 15 Example A-19 (Recovery of 2-benzyl-3-oxooxybutyric acid ethyl ester) Ethyl acetate was added to the resist stripping solution used in Example A-18, and the organic layer was separated and the organic layer was dried over anhydrous sodium sulfate. After filtration, the solvent was distilled off, and 2-benzyl-3-oxooxybutyric acid ethyl ester 20 and 2-aminoethanol were recovered as a mixture. <Example B; /3-ketodecylamine compound> B-1 (Synthesis of N-(2-hydroxyethyl)-4,4-dimethyl-3-oxo-pentamethyleneamine) 4, 4- 2 in a 50 ml eggplant flask under nitrogen atmosphere A -3- 40 200916607 15.82g (100mmol) of methyloxy-valerate and 9.16g (150mmol) of 2-aminoethanol, and stirred for 16 hours while maintaining the temperature below 30 ° C. After the reaction, the reaction solution was concentrated. The obtained yellow oily concentrate was purified by a ruthenium dioxide gel column chromatography (eluent: ethyl acetate) to obtain N-(2-hydroxyethyl)-4, which was obtained as a 5-color oil. 4-dimercapto-3-oxo-pentamidine 10.96 g (yield: 59%). The analytical data of the obtained above compounds are shown below. 1 H-NMR spectrum (300 MHz » CDC13) (5 ppm; 1.18 (s > 9H), 3.07 (t, 1H, J = 5.4 Hz), 3.42~3.47 (m, 2H), 3.52 (s, 10 2H) , 3.70~3.75 (m, 2H), 7.48 (brs, 1H).
Mass spectrum(CI-MS) · m/z=188[M+ +1]. 實施例B-2 (調製試驗用剝離劑:(N-(2-羥乙基)-4, 4-二甲基-3-側氧基-戊醯胺) 15 於2-胺基乙醇與超純水之混合液(重量比:3M)40g中, 以室溫混合防蝕劑成分之N-(2-羥乙基)-4, 4-二甲基-3-側氧 基-戊醯胺2g,調製出試驗用光阻剝離溶液。 實施例B-3 (測定侵蝕度;N-(2-羥乙基)-4,4-二甲基-3-側氧基-戊醯胺) 20 將市售銅箔以50°C浸潰於1 wt%氫氧化鈉水溶液1分 鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨再進行乾燥, 進行銅箔之前置處理。接著,將該銅線以70UC浸潰於實施 例B-2製作之試驗用光阻剝離劑,攪拌1小時。之後,從試 驗用光阻剝離劑去除銅箔,以感應耦合電漿質譜分析法 41 200916607 (ICP-MS)測定溶解之銅濃度。依前述數學式(1)將測定值作 為侵蝕度值表示,為6ppb/mg。 實施例B-4 (合成N-(2-羥乙基)-3-苯基-3-側氧基_丙醯胺) 5 於氮氣環境下,於設有攪拌機及溫度計之20ml茄型燒 瓶中混合3-苯基-3-側氧基-丙酸甲酯1718§(4〇111111〇1)與2胺 基乙醇4.89g(80mmol),一邊維持30=c以下之溫度一邊攪拌 16小時。反應結束後濃縮所得反應液,取得黃色油狀物之 濃縮物。再將所得濃縮物以二氧化矽凝膠管柱層析儀(溶出 10液:乙酸乙酯)純化’而製得微黃色結晶之N-(2-羥乙基)-3-苯基-3-側氡基-丙醯胺2.11g(收率:25.5%)。 所得化合物之分析數據如下。 iH-NMR spectrum(300MHz、CDCl3)(5ppm : 2.54(t, 1H,J=5.4Hz),3.48〜3.53(m,2H),3.75~3.80(m,2H),4.00(s, 15 2H),7.50~7.66(m,4H),7.98~8.02(m,2H).Mass spectrum (CI-MS) · m/z = 188 [M + +1]. Example B-2 (Reducing agent for preparation test: (N-(2-hydroxyethyl)-4, 4-dimethyl-) 3-sided oxy-pivalamidine) 15 In a mixture of 2-aminoethanol and ultrapure water (weight ratio: 3M) 40g, N-(2-hydroxyethyl) mixed with an inhibitor component at room temperature -4,4-Dimethyl-3-oxo-pentamethyleneamine 2 g, the test photoresist stripping solution was prepared. Example B-3 (Measurement of erosion degree; N-(2-hydroxyethyl)-4 , 4-dimethyl-3-oxo-pentamethyleneamine) 20 The commercially available copper foil was immersed in a 1 wt% aqueous sodium hydroxide solution at 50 ° C for 1 minute, and a 1 wt% aqueous sulfuric acid solution was used for 1 minute. The pure copper was washed and dried, and the copper foil was pretreated. Then, the copper wire was immersed in the test photoresist stripping agent prepared in Example B-2 at 70 UC, and stirred for 1 hour. The photoresist was removed by a photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry 41 200916607 (ICP-MS). The measured value was expressed as an erosion degree value according to the above formula (1), and was 6 ppb/mg. Example B-4 (Synthesis of N-(2-hydroxyethyl)-3-phenyl-3-oxo-propionamine) 5 in a nitrogen ring Next, in a 20 ml eggplant type flask equipped with a stirrer and a thermometer, 3-phenyl-3-oxo-methyl propionate 1718 § (4〇111111〇1) and 2-aminoethanol 4.89 g (80 mmol) were mixed. The mixture was stirred for 16 hours while maintaining a temperature of 30 = c or less. After the completion of the reaction, the obtained reaction liquid was concentrated to obtain a yellow oil-like concentrate. The obtained concentrate was then subjected to a cerium oxide gel column chromatography (dissolving 10 liquids). : (ethyl acetate) was purified to give a pale yellow crystal of N-(2-hydroxyethyl)-3-phenyl-3-ylidene-propanamine 2.11 g (yield: 25.5%). The analytical data are as follows: iH-NMR spectrum (300 MHz, CDCl3) (5 ppm: 2.54 (t, 1H, J = 5.4 Hz), 3.48 to 3.53 (m, 2H), 3.75 to 3.80 (m, 2H), 4.00 (s) , 15 2H), 7.50~7.66 (m, 4H), 7.98~8.02 (m, 2H).
Mass spectrum(CI-MS) : m/z=208[M+ + 1]· 熔點:73〜76°C. 實施例B-5 (調製剝離液:(2-羥乙基)-3-苯基-3-側氧基-丙醯胺) 20 於剝離劑成分之2-胺基乙醇與超純水之混合液(重量 比:3/l)40g中,以室溫添加防蝕劑成分之(2-羥乙基)-3-苯 基-3-側氧基-戊醯胺2g,調製出剝離液。 實施例B-6 (測定侵蝕度:(2-羥乙基)-3-苯基-3-侧氧基-丙醯胺) 42 200916607 將市售銅箔以50°C浸潰於1 wt%氫氧化鈉水溶液1分 鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨再進行乾燥, 進行銅箔之前置處理。 接著,將該銅線以70°C浸潰於實施例B-5之剝離液,靜 5 置1小時。之後,從剝離液去除銅箔,以感應耦合電漿質譜 分析法(ICP-MS)測定溶解於該液中之銅濃度。依前述數學 式(I)將測定值作為侵姓度值表示,結果為5ppb/mg。 實施例B-7 (回收(2-¾乙基)-3 -苯基-3-側氧基-丙酷胺) 10 將乙酸乙酯投入實施例B-6所用剝離液中,分液及抽提 有機層。使用無水硫酸鈉使所得有機層乾燥,過濾後餾除 溶劑,可以混合物形式回收2-(羥乙基)-3-苯基-3-側氧基-丙 醯胺及2-胺基乙醇。 比較例1 15 (試驗片:銅箔;無具防蝕作用之化合物) 除了不使用具防蝕作用之化合物,即式(B1)所示yS-酮 基醯胺化合物以外,與實施例B-5、實施例B-6進行相同操 作及評估,結果為198ppb/mg。 比較例2 20 (試驗片:銅箔;具防蝕作用之化合物··苯并三唑) 除了使用苯并三唑作為具防蝕作用之化合物以外,與 實施例B-5、實施例B-6進行同樣之操作及評估,結果為 15ppb/mg ° <實施例C :胺烯醯胺化合物> 43 200916607 實施例c-i (合成N-(2-羥乙基)-3-(2-羥乙基胺基)-4, 4-二甲基-2-戊烯醯 胺) 於氮氣環境下,於5〇ml茄型燒瓶中混合4, 4-二甲基-3-5 侧氧基-戊酸甲酯30.00g(190mmol)與2-胺基乙醇 30.00g(491mmol),以70°C授拌4小時。反應結束後濃縮反 應液,將所得黃色油狀濃縮物以二氧化矽凝膠管柱層析儀 (溶出液:乙酸乙酯)純化,製得呈無色油狀之N-(2-羥乙 基)-3-(2-羥乙基胺基)-4, 4-二甲基-2-戊烯醯胺43.76g(收 10 率:59%)。Mass spectrum (CI-MS): m/z = 208 [M + + 1] · Melting point: 73 to 76 ° C. Example B-5 (Preparation of stripping liquid: (2-hydroxyethyl)-3-phenyl- 3-sided oxy-propionamide) 20 In the mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/l) of 40g of the stripper component, the corrosion inhibitor component is added at room temperature (2- 2 g of hydroxyethyl)-3-phenyl-3-oxo-pentamidine was prepared to prepare a stripper. Example B-6 (Isolation degree of corrosion: (2-hydroxyethyl)-3-phenyl-3-oxo-propionamide) 42 200916607 Commercially available copper foil was immersed at 1% by weight at 50 ° C After the sodium hydroxide aqueous solution was used for 1 minute and the lwt% sulfuric acid aqueous solution was used for 1 minute, it was washed with ultrapure water and dried, and the copper foil was pretreated. Next, the copper wire was immersed in the peeling liquid of Example B-5 at 70 ° C, and allowed to stand for 1 hour. Thereafter, the copper foil was removed from the stripping solution, and the concentration of copper dissolved in the liquid was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value was expressed as an invading value according to the above formula (I), and the result was 5 ppb/mg. Example B-7 (Recovery (2-3⁄4 ethyl)-3-phenyl-3-oxo-propylamine) 10 Ethyl acetate was put into the stripping solution used in Example B-6, and the liquid was separated and pumped. Lift the organic layer. The obtained organic layer was dried over anhydrous sodium sulfate, and the solvent was evaporated, and then 2-(hydroxyethyl)-3-phenyl-3-oxo-propanamine and 2-aminoethanol were recovered as a mixture. Comparative Example 1 15 (Test piece: copper foil; no anti-corrosion compound) Except that the compound having an anticorrosive action, that is, the yS-ketoguanamine compound represented by the formula (B1), was not used, and Example B-5, The same operation and evaluation were carried out in Example B-6, and the result was 198 ppb/mg. Comparative Example 2 20 (Test piece: copper foil; compound having anti-corrosion effect · benzotriazole) Except that benzotriazole was used as a compound having an anticorrosive action, it was carried out in the same manner as in Example B-5 and Example B-6. The same operation and evaluation gave a result of 15 ppb/mg ° <Example C: Amineneamine compound> 43 200916607 Example ci (Synthesis of N-(2-hydroxyethyl)-3-(2-hydroxyethyl) Amino)-4,4-dimethyl-2-pentenylamine) 4,4-dimethyl-3-5-oxo-valeric acid mixed in a 5 〇ml eggplant flask under nitrogen atmosphere 30.00 g (190 mmol) of methyl ester and 30.00 g (491 mmol) of 2-aminoethanol were stirred at 70 ° C for 4 hours. After the completion of the reaction, the reaction mixture was concentrated, and the obtained oily white oil was purified on silica gel column chromatography (eluent: ethyl acetate) to give N-(2-hydroxyethyl) as a colorless oil. ?-(2-hydroxyethylamino)-4,4-dimethyl-2-pentenylamine 43.76 g (10%: 59%).
Mass spectrum(CI-MS) · m/z=231[M+ +1]. 實施例C-2 (調製試驗用光阻剝離溶液·· N-(2-羥乙基)-3-(2-羥乙基胺 基)-4, 4-二甲基_2-戊烯醯胺) 15 於2~胺基乙醇與超純水之混合液(重量比:3/l)40g中, 以室溫添加防蝕劑之N-(2-羥乙基)-3-(2-羥乙基胺基)-4,4- 二甲基-2-戊烯醯胺2g,調製出試驗用剝離液。 實施例C-3 (測定侵蝕度:N-(2-羥乙基)-3-(2-羥乙基胺基)-4, 4-二甲基 20 -2-戊婦酿胺) 將市售銅線(重量:1900mg)以5CTC浸潰於lwt%氫氧化 納水溶液1分鐘、lwt%硫酸水溶液1分鐘後,以超純水洗淨 再進行乾燥,進行銅線之前置處理。接著,將該銅線以70 C浸潰於實施例C-5製作之試驗用光阻剝離劑,攪拌1小 44 200916607 時。之後,從試驗用光阻剝離劑去除銅線,以感應耦合電 漿質譜分析法(ICP-MS)測定溶解之銅濃度。依前述數學式 (I)將測定值作為侵#度值表示,為2.3ppb/mg。 實施例C-4 5 (合成N-(2-輕乙基)-3-(2-經乙基胺基)-2-丁醯胺) 於氮氣環境下,以25°C將2-胺基乙醇l〇.〇〇g(l〇〇mm〇l) 與N-(2-羥乙基)-3-側氧基-丁醯胺i4.50g(100mmol)攪拌1小 時。反應結束後,測定反應液之Mass spectrum(CI-MS),而 碟認N-(2-經乙基)-3-(2-經乙基胺基)_2_丁酸酿胺之產生。 1〇 Mass spectrum (CI-MS) : m/z=189[M+ + 1]. 實施例C-5 (調製s式驗用光阻剝離溶液;N-(2-經乙基)_3_(2_經乙基胺 基)-2-丁醯胺) 於2-胺基乙醇與超純水之混合液(重量比:3/i)4〇g中, 15以室溫添加防蝕劑成分之Ν·(2-羥乙基)-3_(2_羥乙基胺 基)-2-丁醯胺2g,調製出試驗用光阻剝離液。 實施例C-6 (測定侵钱度·· N-(2-經乙基)冬(2_經乙基胺基)2_丁酿胺) 將市售銅線(重量:BOOmg)以 2〇納水溶液!分鐘士【%硫酸水溶液!分鐘後,以超純水洗淨 麟行乾燥’進行銅線之前置處理。接著,將該銅線以7〇 U漬於實施例《製作之試驗用光_離劑,擾摔h、 時。之後,從試驗用光阻剝離劑去除鋼線,以感應輛合電 黎質譜分析法(ICP_MS)測定溶解之鋼濃度。依前述數學式 45 200916607 ⑴將測定值作為侵蝕度值表示,為1.5ppb/mg。 比較例3 (試驗片.銅線,無具防钱作用之化合物) 除了不使用具防蝕作用之化合物以外,進行與實施例 5 A-1及C-2同樣之操作,獲得不含防|虫化合物之試驗用光阻 剝離液。使用其進行3次與實施例A-2及C-3相同之操作’結 果各為 211ppb/mg、79ppb/mg、97ppb/mg,3 次平均值為 129ppb/mg 。 比較例4 10 (試驗片.銅線,具防钱作用之化合物:苯并三0坐) 除了使用苯并三唑作為具防蝕作用之化合物以外,與 實施例A-1及C-2同樣地調製光阻剝離液,並進行與實施例 A-2及C-3相同之評估。結果為3.7ppb/mg。 比較例5 15 (試驗片:銅線;具剥離性能之化合物:2-乙醇胺) 除了使用2-乙醇胺作為具剝離性能之化合物以外,與 實施例A-1及C-2相同地調製光阻剝離液,進行與實施例八_2 及C-3相同之s平估。結果為27.6ppb/mg。 從上述實施例之結果可知,實施例所使用之取代酮化 20合物及其衍生物的侵蝕度值相對於既有之笨并三唑較小, 即,顯示出優異之防蝕效果。此外,測定侵蝕度後,可從 經使用之光阻剝離液的廢液回收本發明之取代嗣化合物或 其衍生物。 產業上之可利用性 46 200916607 如前述,依據本發明,可獲得:一種防餘劑、防I虫處 理液或防蝕保存液,其含有選自式(A1)、式(B1)及式(C1) 所示之取代酮化合物及其衍生物中之至少1種化合物;以 及,一種兼具防蝕性能與光阻剝離性能之光阻剝離劑或光 5 阻剝離液,其含有該化合物與具光阻剝離性能之化合物。 舉例來說,前述本發明之光阻剝離劑或光阻剝離液使 用在半導體積體電路及印刷電路基板等製程中,可賦予 銅、鋁或該等所構成之合金等具有腐蝕性之金屬優異的防 止腐蝕效果。 10 【圖式簡單說明】 (無) 【主要元件符號說明】 (無) 47Mass spectrum (CI-MS) · m/z = 231 [M + +1]. Example C-2 (Resistance stripping solution for preparation test · · N-(2-hydroxyethyl)-3-(2-hydroxyl Ethylamino)-4,4-dimethyl-2-pentenylamine) 15 in a mixture of 2~ aminoethanol and ultrapure water (weight ratio: 3/l) 40g, added at room temperature 2 g of N-(2-hydroxyethyl)-3-(2-hydroxyethylamino)-4,4-dimethyl-2-pentenylamine as a corrosion inhibitor was prepared to prepare a test stripper. Example C-3 (Determination of corrosion: N-(2-hydroxyethyl)-3-(2-hydroxyethylamino)-4,4-dimethyl 20 -2-pentanol) The copper wire (weight: 1900 mg) was immersed in a 1 wt% sodium hydroxide aqueous solution at 5 CTC for 1 minute, and a lwt% sulfuric acid aqueous solution was used for 1 minute, and then washed with ultrapure water and then dried to carry out copper wire pretreatment. Next, the copper wire was immersed in a test photoresist stripper prepared in Example C-5 at 70 C, and stirred at 1 small 44 200916607. Thereafter, the copper wire was removed from the test photoresist stripper, and the dissolved copper concentration was measured by inductively coupled plasma mass spectrometry (ICP-MS). The measured value is expressed as the invading value according to the above formula (I) and is 2.3 ppb/mg. Example C-4 5 (Synthesis of N-(2-lightethyl)-3-(2-ethylamino)-2-butanamine) 2-Amino group at 25 ° C under nitrogen atmosphere Ethanol l〇.〇〇g (l〇〇mm〇l) was stirred with N-(2-hydroxyethyl)-3-oxo-butanamine i 4.50 g (100 mmol) for 1 hour. After the completion of the reaction, the Mass spectrum (CI-MS) of the reaction liquid was measured, and the production of N-(2-ethyl)-3-(2-ethylamino)_2-butyric acid was determined. 1 〇 Mass spectrum (CI-MS): m/z = 189 [M + + 1]. Example C-5 (Modulation s type test resist stripping solution; N-(2-ethyl)_3_(2_ Ethylamino)-2-butylimamine) In a mixture of 2-aminoethanol and ultrapure water (weight ratio: 3/i) 4 〇g, 15 at room temperature, adding anti-corrosive ingredients Ν· 2 g of (2-hydroxyethyl)-3_(2-hydroxyethylamino)-2-butanamine was prepared to prepare a photoresist stripper for testing. Example C-6 (Measurement of Invasion Degree··N-(2-Ethyl) Winter (2_Ethylamino) 2_Butylamine) Commercially available copper wire (weight: BOOmg) was 2〇 Aqueous solution! Minutes [% aqueous solution of sulfuric acid! After a minute, the copper wire was washed with ultrapure water and the copper wire was pretreated. Next, the copper wire was stained with 7 〇 U in the test light produced by the example of the example, and the time was disturbed. Thereafter, the steel wire was removed from the test photoresist stripper to measure the dissolved steel concentration by inductive electric mass spectrometry (ICP_MS). The measured value is expressed as an erosion degree value according to the above-mentioned mathematical formula 45 200916607 (1), and is 1.5 ppb/mg. Comparative Example 3 (Test piece. Copper wire, compound having no anti-money effect) The same operation as in Examples 5 A-1 and C-2 was carried out except that the compound having an anticorrosive effect was not used, and no anti-insect was obtained. A photoresist stripper for testing compounds. The same operation as in Examples A-2 and C-3 was carried out three times, and the results were 211 ppb/mg, 79 ppb/mg, and 97 ppb/mg, respectively, and the average value of three times was 129 ppb/mg. Comparative Example 4 10 (Test piece. Copper wire, compound having anti-money effect: benzotriene) The same as Examples A-1 and C-2 except that benzotriazole was used as the compound having an anticorrosive action. The photoresist stripper was prepared and evaluated in the same manner as in Examples A-2 and C-3. The result was 3.7 ppb/mg. Comparative Example 5 15 (Test piece: copper wire; compound having peeling property: 2-ethanolamine) The photoresist stripping was prepared in the same manner as in Examples A-1 and C-2 except that 2-ethanolamine was used as the compound having peeling properties. The liquid was subjected to the same s evaluation as in Examples VIII and C-3. The result was 27.6 ppb/mg. As is apparent from the results of the above examples, the degree of corrosion of the substituted ketone 20 compound and its derivative used in the examples was smaller than that of the existing stupid triazole, i.e., exhibited an excellent anticorrosive effect. Further, after the degree of corrosion is measured, the substituted hydrazine compound of the present invention or a derivative thereof can be recovered from the waste liquid of the used photoresist stripping liquid. Industrial Applicability 46 200916607 As described above, according to the present invention, an anti-surplus agent, an anti-Immune treatment solution or an anti-corrosion preservation solution containing the formula (A1), the formula (B1) and the formula (C1) can be obtained. a compound of at least one of a substituted ketone compound and a derivative thereof; and a photoresist stripper or a photoresist stripper having both anti-corrosion properties and photoresist peeling properties, comprising the compound and a photoresist Peeling properties of the compound. For example, the photoresist stripper or the photoresist stripper of the present invention is used in a process such as a semiconductor integrated circuit and a printed circuit board, and is excellent in corrosive metals such as copper, aluminum, or the like. Prevent corrosion effects. 10 [Simple description of the diagram] (none) [Description of main component symbols] (none) 47
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- 2008-09-18 JP JP2009533219A patent/JP5263167B2/en not_active Expired - Fee Related
- 2008-09-18 TW TW097135967A patent/TW200916607A/en unknown
- 2008-09-18 WO PCT/JP2008/067367 patent/WO2009038224A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| JP5263167B2 (en) | 2013-08-14 |
| JPWO2009038224A1 (en) | 2011-01-13 |
| WO2009038224A1 (en) | 2009-03-26 |
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