TW200915357A - Thermistor chip and method of fabricating the same - Google Patents

Abstract

A thermistor chip including a substrate, a first electrode, a second electrode, a thermistor layer, and a first buffer layer is provided. The substrate has a first surface. The first electrode is disposed on the first surface. The first buffer layer covers at least part of the first electrode, and the thermistor layer at least covers the first buffer layer. The melting point of the first buffer layer is respectively greater than the sintering temperature of the thermistor layer and the melting point of the first electrode. The first electrode is electrically connected to the thermistor layer through the first buffer layer. The second electrode is disposed separately form the first electrode and electrically connected to thermistor layer. The electrical performance of the said thermistor chip is better. A method of fabricating the thermistor chip is also provided.

Description

BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a thermistor wafer and a method of fabricating the same, and more particularly to a heat sensitive device having a buffer layer. A resistor chip and a method of manufacturing the same. [Prior Art] The resistance value of the thermistor wafer changes with temperature. The thermistor wafer can be divided into negative temperature coefficient (NTC) thermistor wafer and resistance value proportional to temperature, which is proportional to the change of resistance value with temperature. There are two types of positive temperature coefficient (PTC) thermistor wafers. Referring to FIG. 1 , a conventional thermistor wafer 100 includes a substrate 110 , a first electrode 120 , a second electrode 130 , a thermistor layer 140 , and two external electrodes ( External electrode 150, two back electrodes, and a protective layer 170. The substrate no has a first surface 112, a second surface U4 relative to the first surface 112, and end surfaces 116 connecting the first surface 112 and the second surface 114. The first electrode 120 and the second electrode 130 are disposed on the first surface 112 of the substrate 110. The back electrodes 160 are disposed on the second surface 114 of the substrate 11 , and the thermistor layer 140 is disposed on the first surface 112 and electrically The first electrode 120 and the second electrode 130 are connected. The thermistor layer 14 is covered with a portion of the first electrode 120 and a portion of the second electrode 130. The protective layer 170 covers a portion of the first power 200915357:4171twf.doc/n* pole 120, a portion of the second electrode 130, and the thermistor layer 140. The external electrodes 150 are respectively extended by the first electrode 120 and the second electrode 130 on the first surface Π2 through one of the end faces 116 and electrically connected to the back electrodes 160 on the second surface ι14. However, a thermistor wafer manufactured by a thick film process and a sintering process has been manufactured.

There are many printing and sintering steps in the process. Since the material of the first electrode 12 〇 and the second electrode 130 is silver, and the melting point of the silver is too close to the sintering temperature when the thermistor layer 140 is formed, the thermal breaking resistance layer 140 is formed through the sintering process. The first electrode 12 〇 and the first electrode 130 generate a silver edge shift (siiver mjgrate) to cause a portion of the silver to diffuse into the main thermistor layer 140, thereby affecting the resistance value of the resistance value and the overall electrical performance. (electrical perf〇rmance ).

At present, the thickness T1 of the thermistor layer 14A is increased (that is, the distance between the third surface 142 of the thermistor layer 140 away from the substrate 11 and the first surface 112 of the substrate 11A) or the first electrode The material of 120 and the second electrode 13A is changed to a wire alloy to improve the above problem. However, increasing the thickness TU of the thermistor layer U0 or the like increases the volume of the thermistor wafer 1〇〇. = The silver-palladium alloy used for silver migration, in the first electrode 4 factory, the weight of the electricity is 0 / min ratio of about 15% ~ 3 〇. /0, and ·, 材料, material cost & expensive, it will increase the overall cost. SUMMARY OF THE INVENTION The preferred embodiment of the present invention is to provide a thermistor at a low cost. Further, it is a further object of the present invention to provide a thermistor crystal having a better electrical performance of a thermistor wafer. Further, the present invention provides a thermistor wafer having a small volume and a low cost, and the present invention provides a thermistor wafer including a substrate. , an ... electrode, - second electrode: - thermistor layer and a first layer. : The board has a first surface. The first electrode is disposed on the first surface. The punch layer covers at least a portion of the first electrode, and the thermistor layer is at least a second buffer layer. The melting point of the first buffer layer is greater than the temperature of the thermistor layer and the melting point of the first electrode, respectively, and the first electrode is electrically connected to the thermistor layer by the first buffer layer. The second electrode is spaced apart from the first electrode and electrically connected to the thermistor layer. In one embodiment of the invention, the first buffer layer has a melting point greater than or equal to 1400 degrees Celsius. In an embodiment of the invention, the material of the first buffer layer comprises nickel, platinum, rhodium or an alloy comprising at least one of the above metals. In an embodiment of the invention, the material of the first electrode comprises silver, and the weight percentage of silver in the first electrode is 85% or more. In an embodiment of the invention, the first buffer layer has a thickness between 1000 angstroms and 3000 angstroms. In one embodiment of the invention, the thermistor layer is formed by a thick film process, and the first buffer layer is formed by a thin film process or a thick film process. 200915357 24171 twf.doc/n Mud / 31 corpse '~, The resistance temperature of a resistive layer is between 850 degrees Celsius and 950 degrees Celsius. In one embodiment of the present invention, the thermistor wafer further includes a glass protective layer and a polymer protective layer, wherein the glass protective layer covers at least the resistive layer The polymer protective layer covers at least the glass protective layer. Yes 明 = Ming, one: In the embodiment, the first electrical core is arranged in the

- the end directly covers the portion of the L ^ J varistor layer directly covering the first buffer layer, the other end of the layer extends to directly cover a portion of the first surface, and the second = the junction portion of the thermal On the electric (four), and the second electrode = first extended to directly cover a part of the first surface. Further, the third of the thermistor wafers further includes a melting point of the third-buffer layer, and the melting point of the thermosensitive circuit is greater than the melting point of the thermistor. In addition, the third buffer, the degree of phase, and the third electrode of the third electrode are at least the combination of the above-mentioned metals, and the shell includes nickel, turned, sleeved or included. In one embodiment of the invention, the material comprises silver. The first electrode and the second electrode which are disposed directly on the substrate include a second buffer layer, a cover surface and a surface. In addition, the thermistor chip covers at least the second buffer layer and a portion of the second electrode. The temperature of the sintering layer of the thermistor layer and the _th point are larger than the heat-sensitive electrode_point. In addition, the second buffer layer 200915357 M17Itwf.doc/n ^ quality includes the Korean or the material of the at least the above-mentioned electrode includes silver. The fourth electrode of the gold is added to the genus, the fourth electrode... the resistor chip further includes The other end of the package extends to the second electrode of the covering portion. The resistive layer and the fourth embodiment are in the embodiment of the invention, the sensing electrode, the first electrode is directly disposed on the first:::, the second electrode Between the fourth electrode and the fourth electrode, the end of the second electrode covers the two ends of the sensitized varistor layer. The 峤 extends to the frost and is stored in the ... main, the broken resistor, and the other resistance of the second electrode. The first electrode of the fourth electrode covers a portion of the other end of the heat-sensitive end to cover the first surface. The manufacturing method of the chip/hypersensitizer chip includes a lower electrode and a second electrode. - a face, forming a first buffer layer to cover at least part of the first life. j with a thick film process disk burning 6 Shi purple, - after the first layer of the first layer. The first layer to cover at least The temperature and the bright point of the first electrode, the burning of the resistive layer. The two electrodes are on the first surface. The electrodes are spaced apart from the first electrode and electrically connected to the thermistor layer, etc. ^^4^/. The above-mentioned first-buffer layer contacts are larger than the lanes The first buffer layer is a film in the embodiment of the present invention, and the above-mentioned thermistor layer has a sintering temperature of 200915357 - : 4171 twf.d 〇 c / n between 850 ° C and 95 ° C. A buffer layer may be disposed between the breaking resistance layer and the electrodes, and the melting point of the buffer layer is respectively greater than the sintering temperature of the thermistor layer and the melting point of the electrode covered by the buffer layer, so the thermistor layer When formed through a sintering process, the buffer layer can prevent the electrode covered by the buffer layer from migrating into the thermistor layer. Therefore, the resistance value of the thermistor wafer of the present invention is not easily affected by the temperature change property. The designer's pre-design requirements can still be met. In other words, the thermistor wafer of the present invention has better electrical performance. To make the above features and advantages of the present invention more apparent, the following embodiments are described and Attached The first embodiment of the present invention relates to a thermistor wafer 2A including a substrate 210, a first electrode 220, and a first embodiment. The second electrode 23〇, the thermistor layer 240 and a first balance layer 250. The substrate 210 has a first surface 212. The first electrode 220, the second electrode 230 and the thermistor layer mo are disposed on the substrate 210 The first electrode 220 is spaced apart from the second electrode 230. The first electrode 220 is electrically connected to the thermistor layer 240 by the first buffer layer 25, and the second electrode 230 and the thermistor layer 240 are connected. The first balance layer 250 covers at least a portion of the first electrode 220, and the thermistor layer 240 reduces the first buffer layer 250. The melting point of the first buffer layer 250 is greater than the sintering temperature of the thermistor layer 240 and the melting point of the first electrode 220, respectively. Referring to FIG. 2B, the equivalent circuit of the thermistor 10 200915357-------^17ltwf.d〇c/n of the first embodiment is the resistance & Circuit. 4 „ month and then refer to FIG. 2A. On the surface 212 of the first embodiment, the first buffer layer is directly on the surface of the first buffer layer, and the first buffer layer is Μ. One end extends directly to the first surface 212. One end of the thermistor layer 24〇 directly covers the first buffer layer 250, and the other end of the thermistor layer 24 extends to directly cover a portion of the first surface 212. The second electrode 23 is directly covered on the portion of the thermistor layer 24, and the other end of the second electrode 23 is extended to directly cover the portion of the first surface 212. In other words, the first buffer layer 2d0 is disposed between the first electrode 22A and the thermistor layer 24A, and the thermistor layer 240 is disposed between the first electrode 22 and the second electrode 23. ～ Since the first buffer layer 250 is disposed Between the thermistor layer 24A and the first-pole 410, and the melting point of the first buffer layer 25〇 is greater than the thermistor (the sintering temperature of the germanium layer 240 and the melting point of the first electrode 220, so the thermistor " When the layer 240 is formed through a sintering process (see below), the first buffer layer 250 can be avoided. The first electrode 22 迁移 migrates and diffuses into the thermistor layer 240. Therefore, the resistance value of the thermistor wafer 2 (10) will not be affected by the change in temperature and still meet the designer's pre-design requirements, so that the thermal The electrical performance of the resistive wafer 200 is better. Moreover, the thickness T2 of the thermistor layer 240 (i.e., the third surface 242 of the thermistor layer 240 away from the substrate 210 and the substrate 210) is superior to the prior art. The distance between a surface 212 can be relatively thin. Therefore, the body of the thermistor wafer 2〇〇200915357 iw-u/ji w^4171twf.doc/n can be smaller. Moreover, the first pole (10) is being read. It can be less than 15%~30% of the prior art. Dimensional gold. Therefore, the material of the thermistor wafer 200: =: silver is free. In this embodiment, the material of the first electrode 220 includes silver in the electrode 220. The weight percentage is, for example, 85% or more, and the quality includes a glass b-switched insulating material. The wire resistance layer = temperature can be between Celsius and 95 degrees Celsius, and the heat

O

The material includes manganese, # '录, copper or dioxide. In addition, the buffer layer 250 may have a melting point greater than or equal to 14 degrees Celsius, and the material of the first layer 250 includes nickel (Ni), chromium (ρί), ruthenium (Ru) or white alloy of at least one of the above metals. The thermistor wafer 200 of the present embodiment further includes a glass protection layer 260, a polymer protection layer 270, two back electrodes 280, and two external electrodes 290. The glass protective layer 260 covers a portion of the second electrode 230, the first buffer 250, the thermistor layer 240, and a portion of the first electrode 220, and the polymer layer 270 covers at least the glass protective layer 260. Since the heat dissipation speed provided by the substrate 210 is fast, the B value of the thermistor wafer 200 is generally unstable, and the heat dissipation speed of the substrate 210 can be reduced by the arrangement of the glass protection layer 260, so that the B value of the thermistor wafer 200 is not The phenomenon of stability can be improved. In this embodiment, the substrate 210 further has a second surface 214 and two opposite end faces 216. The first surface 212 is opposite the second surface 214, and each end surface 216 connects the first surface 212 with the second surface 214. The back electrodes 280 are spaced apart from each other on the second surface 214, and the external electrodes 290 are disposed on the end faces 216, respectively. In addition, these external electrodes 290 are one of 12 200915357 w/λ *! 4171 twf.doc/n, and these are electrically connected to the back electrodes electrically connected to the first electrode 220 and the f-side electrodes 28 and the external electrodes 2901. The second electrode 23 is the other of the drains 280. The method of manufacturing the wafer 200 will be described. ^ First, referring to FIG. 3A, using the printing process: 220 on the first surface of the substrate (10). Next, please take a picture of the film process, such as _ (Sputter) process, ^

The layer 250 is on the first surface 212 such that the first buffer layer 25 is bonded to the portion of the first electrode 220, and the first layer 75() is extended to the directly covering portion of the first surface 212. . In this embodiment, the first buffer - 25 〇 <thickness is controlled by the film process to the center _~3_ angstroms so that the arrangement of the first buffer layer 25 不 does not cause heat = increase in the volume of the resistive wafer 200. After that, please refer to ® 3C, using a thick film process (for example, a printing process, and a sintering process to form the thermistor layer 24 on the first buffer layer 25 and a portion of the first surface 212, so that the thermistor layer 24 is One end directly covers the first buffer layer 250, and the other end of the thermistor layer 24 extends to cover a portion of the first surface 212. It must be noted that the thermistor layer 240 can be printed by pre-printing heat. The resistive material is formed on the first buffer layer 25 and the portion of the first surface 212, and is formed by sintering the thermistor material. It is emphasized that the melting point of the first buffer layer 25 is greater than the thermistor. The sintering temperature of the layer 240 is the same as the melting point of the first electrode 22, so that when the thermistor layer 240 is formed through the above-described sintering process, the first buffer layer 250 can prevent the first electrode 22 from migrating and diffusing to the heat 13a.

L 200915357 -~417ltwf.doc/n Within the varistor layer 240. The electrode 23, the second a jd 'is formed by the printing or the process of forming the second layer _ and part of the surface - the upper end directly covers part of the thermistor layer · the face ^ the other end extends to directly cover the part The first surface = upper; at this point, the thermistor wafer has been substantially completed, however, in the formation of the second formation of the protective layer, the polymer is guaranteed, the surface is 280, and the external electrodes 29 are Hey.快, „明 Referring to FIG. 3, using printing to cover part of the second electrode 230, the first, the punch layer 250, the thermistor layer 24 () and part of the first electrode, the poly: protective layer 27. To cover at least : Guard: owe, the printing tea is dead, and the printing process forms two back thunder poles 280 on the second surface 214 of the substrate 21 。. Then, the rolling clock process is divided into two external electrodes on the two sides of the substrate 21G. W, such that one of these external electrodes 29Q is electrically connected = one of the electrode 220 and the back electrode 28, and these external electrodes are electrically connected to the second electrode 23Q and the back electrodes " In addition, the back electrodes 280 may be formed on the second surface 214 of the substrate 210 by a printing method before forming the first electrode 220 on the first surface 212 of the substrate 210. Second Embodiment Referring to FIG. 4A, a second embodiment of the present invention is different from the first embodiment in that the first electrode 14 200915357 320 and the second electrode of the thermistor wafer 3 of the second embodiment are different. 330 is configured differently, I thermistor chip 300 The first buffer layer 35 and the second electrode 330 are respectively disposed directly on the first surface 312 of the substrate 31 and the first buffer layer 350 and the second buffer layer 350 are respectively disposed. Covering at least a portion of the first electrode 320 and at least a portion of the second electrode 33 respectively, the thermistor layer 340 covers the first buffer layer 350, a portion of the first surface 312 and the second buffer layer 350'. Please refer to FIG. 4B, second. The equivalent circuit of the thermistor wafer 300 of the embodiment is an equivalent circuit having a resistor r shown in Fig. 4B. The melting point of the first buffer layer 350 is greater than the sintering temperature of the thermistor layer 34 and the first electrode, respectively. The melting point of 320, and the melting point of the second buffer layer 35〇, respectively, is greater than the sintering temperature of the thermistor layer 340 and the melting of the second electrode 33〇

~ buffer layer 350' configuration,

The resistance layer and material cost can be lower. [Electrical Third Embodiment] The electrical performance is better in the first buffer layer 35〇 and the first varistor layer 340, and the volume can be smaller. Referring to FIG. 5A, the second embodiment and the first embodiment of the present invention The same is that the thermistor wafer 400 of the third embodiment further includes a second electrode and a third buffer layer. The first buffer 440 is electrically connected to the electrode ε by the first buffer layer 450 and the thermistor layer 440. The third buffer layer β covers at least a portion of the second electrode Ε ' The melting point of the third buffer layer β is respectively greater than the sintering temperature of the thermistor layer 440 and the melting point of the third electrode 。. Referring to FIG. 5A, the equivalent circuit of the thermistor wafer 400 of the second embodiment is FIG. The Ο shown has an equivalent circuit of four resistors R1, R2, R3 and R4. The manufacturing method of the thermistor wafer 4A will be described. First, please refer to FIG. 6A, the first electrode 420 is formed on the substrate 410. The first surface is on the surface. Then, the first buffer layer 450 is formed on the first surface 412, so that the first surface is known. The cap layer 45A covers a portion of the first electrode 420. Next, referring to the figure, I 4, a sub-thermistor layer 440' (sub-thermistor layer) is applied to the portion of the first surface 412 and the first buffer layer 450, so that The sub-thermist layer 44A covers at least the buffer layer 450. Then, referring to FIG. 6C, the third electrode E is formed on the sub-thermistor I) 435, ί-. θ, and the third buffer layer B is formed. Covering at least part of the third battery, the second thermistor layer 4, the other the thermistor layer 440" is formed on the sub-thermist layer 44, 曰^" to cover the third buffer layer B. The sub-thermist layer 440, and the second, and the resistive layer compose the thermistor layer 44. In other words, in terms of the steps illustrated by the fish Pl cr^, 13, and FIG. 6C, Forming the thermistor layer 440, the second electrode E is embedded in the thermistor layer 440 1 The material of the buffer layer B includes recording, turning, comforting or inclusion to ^ Attacking the metal alloy, the material of the third electrode E includes silver. 16 200915357 24171twf.doc/n It must be stated here that due to the third electrode E only passes through the sintering process required to form the sub-thermist layer 440", so the phenomenon that the electrode E migrates to the sub-varistor layer 440" can be controlled. Therefore, the designer can also form the electrode E as shown in the figure. After the step, the step of forming the third buffer layer B is omitted, so that the secondary thermistor layer 440 shown in FIG. 6C is at least directly over the third electrode E, but the above case is not shown in the drawing.

U, then referring to FIG. 6D, forming a second electrode 430 on a portion of the first surface 412 and a portion of the thermistor layer 440 such that the second drain electrode 43 can cover a portion of the thermistor layer 440 and a portion of the first surface . Next, a glass protective layer 460, a polymer protective layer 47, and these back electrodes 480 and the external electrodes 490 are formed. The formation of the above-mentioned members can be referred to FIG. 3E and related description of the first embodiment, and thus no longer Narration. # [Fourth Embodiment], ~ # Please refer to FIG. 7A, the thermistor wafer 5 of the fourth embodiment of the present invention is different from the second embodiment in that the thermistor wafer 5 is further packaged. The third electrode E1 and the fourth electrode E1, f — The electrode 52 〇 and the second 530 are disposed on the first surface 512 of the substrate 510 . The first buffer covers at least a portion of the first electrode 52A, and the second buffer layer 55 is covered with at least a portion of the second electrode 530. The thermistor layer 54A covers the first buffer layer 5%, the second buffer layer 550, and a portion of the first surface 512^three electrodes are disposed in the ^resist layer 540' and the first electrode E1' is covered by the first electrode E1' The other end of the fourth electrode E1 of the thermal barrier layer MG' extends to the cover of the seedlings test 7B'. The fourth example of the thermal 'wafer 5_ 4 effect pen path is shown in Fig. 7Β with five resistances Ri, R2 , r3, r^ 17 200915357 24I71twf.doc/n R5 equivalent circuit. The first buffer layer 550 and the first, second, and the second buffer layer 550 are disposed, and the thermistor layer 540 is not manufactured by the system. The migration occurs and diffuses into the thermistor layer 540, so that the thermistor wafer 5 (10) can be released and the material cost can be low. The touch performance is better and the volume can be 1 [Fifth Embodiment] 包括 Including ilim' The thermistor wafer 6 of the fifth embodiment of the present invention: brother, 20, second electrode 630, third electrode _ electrode 630 and 4. Ε 2, the interval is set at the two ends of the thermistor 1 . The first electrode 620 is disposed directly on the first to sixth of the substrate 010; In the middle position of the face 乂 2, the first buffer layer 650 covers the first power 槌

The heat resistive layer _ covers the first buffer layer 65 〇 and a portion of the first electrode on both sides of the first surface Μ, ρ 味 U 〜 ~ 40 meat from. The Le three electrode E2 is disposed on the thermistor 64, and the one end of the electrode 6 is covered with a portion of the thermistor extending along the other end of the 619 electrode 63G to cover the first surface ^four electrode E2' The end covers a portion of the thermistor body _, and the fifth layer is applied to the first surface 612. Referring to the figure, the equivalent circuit of the thermistor wafer β〇〇 of _ Κ 为 is shown in Fig. 8; β 1 has the same circuit of four resistors R1 'R2, R3 舆 r4. The thermistor &amplifier of the present invention has at least a backing layer disposed between the thermistor layer and the electrodes, and the melting point of the buffer layer is greater than that of the thermistor layer. 200915357 24171twf.doc/n The junction temperature and the melting point of the electrode covered by the buffer layer, so that the thermistor layer is formed by the sintering process, the buffer layer can avoid the migration of the electrode covered by the buffer layer. Diffusion into the thermistor layer. Therefore, the resistance value of the thermistor wafer of the present invention as a function of temperature will be less susceptible to affecting the designer's pre-design requirements. In other words, the thermistor wafer of the present invention performs better in electrical performance. 2. Since the buffer layer can prevent the electrode covered by the buffer layer from migrating into the thermistor layer, the thickness of the thermistor layer of the present invention can be thinner than in the prior art. Therefore, the volume of the thermistor wafer of the present invention can be small. 3. Since the buffer layer can prevent the electrode covered by the buffer layer from migrating and diffusing into the thermistor layer, the weight of the palladium in the material of the electrode of the present invention can be less than that of the prior art. 15% ~ 30%, even without the use of silver Zhao alloy. Therefore, the material cost of the thermistor wafer of the present invention can be low. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the invention, and any one of ordinary skill in the art can make some modifications and simplifications without departing from the spirit and scope of the invention. Therefore, the scope of the invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic cross-sectional view showing a conventional thermistor wafer. Fig. 2A is a cross-sectional view showing a thermistor wafer of the first embodiment of the present invention. 19 200915357 !4171twf.doc/n FIG. 2B is an equivalent circuit diagram of the thermistor wafer of FIG. 2A. 3A to 3F are schematic views showing the flow of manufacturing the thermistor wafer of Fig. 2A. 4A is a cross-sectional view showing a thermistor wafer according to a second embodiment of the present invention. 4B is an equivalent circuit diagram of the thermistor wafer of FIG. 4A. Fig. 5A is a cross-sectional view showing a thermistor wafer according to a third embodiment of the present invention. FIG. 5B is an equivalent circuit diagram of the thermistor wafer of FIG. 5A. 6A to 6D are schematic views showing the flow of manufacturing the thermistor wafer of Fig. 5A. Fig. 7A is a schematic view showing a 热敏1J surface of a thermistor wafer according to a fourth embodiment of the present invention. FIG. 7B is an equivalent circuit diagram of the thermistor wafer of FIG. 7A. Fig. 8A is a cross-sectional view showing a thermistor wafer according to a fifth embodiment of the present invention. FIG. 8B is an equivalent circuit diagram of the thermistor wafer of FIG. 8A. [Description of Main Component Symbols] 100, 200, 300, 400, 500, 600: Thermistor wafers 110, 210, 310, 410, 510, 610: substrates 112, 114, 142, 212, 214, 242, 312, 412 , 512, 612: surface 116, 216: end faces 120, 130, 150, 160, 220, 230, 280, 290, 320, 20 200915357 KD-U/>-J w /4l71twf.doc/n 330, 420, 430, 480, 490, E, 520, 530, E, 620, 630, E2, E2': electrodes 140, 240, 340, 440, 540, 640: thermistor layers 250, 350, 350', 450 , B, 550, 550', 650: buffer layer 170, 260, 270, 460, 470: protective layer 440', 440": secondary thermistor layer T, T2: thickness

Claims (1)

200915357 •4171twf.doc/n X. Patent application scope: [A kind of thermistor wafer, including two substrates, having a first surface; ': the first; the electrode is disposed on the first surface; a stamping layer covering at least a portion of the first electrode; and a buffering resistor layer covering at least the first buffer layer, wherein the first The radiant ^, ', and the points are respectively larger than the sintering temperature of the thermistor layer and the sleek point of the first % pole, and the day two jin is the middle "', the five-sided swell-electrode by the first buffer layer The second electrode is electrically connected to the first layer, and is electrically connected to the thermistor. _楚"·If the thermistor wafer described in claim 1 of the patent scope, the 4th brother: the refining point of the buffer layer is greater than or equal to _ degrees Celsius. The 5:=:, the thermal term described in the item: a resistive wafer, the metal of which is made of nickel, platinum, rhodium, or at least one of the above-mentioned ones of the first::, the thermistor wafer of the first item, wherein it is 85% or more. Silver, and the first electrode reported the weight percentage of the heart and the wafer, between the soil. The resistance wafer, where ~ buffer layer is utilized (4) 5 · as the towel please patent the first item described in the thermal brother 6 - buffer f The thickness of the heat-sensitive film process described in item 1 is in the form of a thick film process. The 22nd 200915357 24171twf.doc/n Μ %. IJ l AT » ^ 7. The thermistor wafer of claim 1, wherein the thermistor layer has a sintering temperature of between 850 ° C and 95 ° C. 8. The heat according to claim 1 The varistor wafer further includes a glass protective layer and a polymer protective layer, and the glazing protective layer is at least Covering the thermistor layer, the polymer protective layer covering at least the glass protective layer. 9. The thermistor p and the wafer according to claim 1, wherein the first electrode is directly disposed on the first surface The one end of the first buffer layer directly covers a part of the first electrode, and the other end of the first slow-street layer extends to the first surface of the direct cover portion, and one end of the thermistor layer is directly behind Covering the first buffer layer, the other end of the thermistor extends to the first surface of the 5H, and one end of the second electrode directly covers part of the thermistor layer. And the other end of the second electrode extends to directly cover a portion of the first surface. 10. The thermistor and the wafer, as described in the scope of claim 2, further comprising a third electrode disposed on the thermistor The thermistor wafer according to claim 0, further comprising a third buffer layer covering at least a portion of the third electrode, wherein the third buffer layer has a melting point greater than the thermal Sintering temperature of the resistive layer and the third electrode The thermistor wafer of claim 1 , wherein the third buffer layer is made of nickel, platinum, rhodium or an alloy containing at least one of the above metals, and the third The material of the electrode includes silver. 23 200915357 24ll\twtdodn a such as a patent range of the gas wall ^ core heat i: resistance wafer, wipes:: the electrode and the second electrode are directly disposed on the substrate: The spoon includes R such as = flipping the 13th item of the soft-recorded wafer, and more = the second layer, covering at least part of the second electrode, = the broken resistance layer covering at least the second buffer layer, Sihai C: Ο The sintering temperature of the layer is not greater than that of the second electrode. The pure electrode wafer of the second electrode is as described in Item 14. The material of the layer includes nickel, (four) or an alloy of two metals. The material of the second electrode includes silver. It includes a thermistor wafer as described in the fourth embodiment, a more resistive layer, and the heat-sensitive electrode of the core. Lizhi extended to the second part of the benefit of the second electricity. 17. For example, the application of the patent court surrounded by the fourth electrode, which is the thermistor wafer described in the younger brother, in the middle position, the flute - ~ turtle The two ends of the resistive layer disposed at the first surface are disposed at a distance from the fourth electrode, and the second electrode is covered with a portion of the thermistor One end covering portion 8 extends to cover the first surface, and the first end extends to cover the first thermistor layer, and the other electrode of the fourth electrode is a thermal-sensitive 雷t surface. Forming a first pole manufacturing method, comprising: forming a first winding, a first surface of the board; ', S to cover at least a portion of the first electrode; 24 200915357 ...-.._417Itwf.doc/n Forming a thermistor layer to cover at least the first buffer layer by using a thick film process and a sintering process, wherein a melting point of the first buffer layer is greater than a sintering temperature of the thermistor layer and a melting point of the first electrode, respectively And the first electrode is electrically connected to the thermistor layer by the first buffer layer; and a second electrode is formed on the first surface, wherein the second electrode is spaced apart from the first electrode and The thermistor layer is electrically connected. 19. The method of manufacturing the thermistor wafer of claim 18, wherein the first buffer layer has a melting point greater than or equal to 1400 degrees Celsius. 20. The method of manufacturing a thermistor wafer according to claim 18, wherein the first buffer layer is formed by a thin film process. 21. The method of manufacturing a thermistor wafer according to claim 18, wherein the thermistor layer has a sintering temperature of between 850 degrees Celsius and 950 degrees Celsius. 25