200901818 九、發明說明 【發明所屬之技術領域】 本發明係有關能夠被使用於影像顯示設備、照明系統 等等之有機發光設備的製造方法。 【先前技術】 於1 987年，Tang等人已提出具有一組態之有機發光 裝置（有機EL(電致發光）裝置），而在該組態中，具有不同 載子可移動性之有機化合物被層疊，並且分別從陽極和陰 極中以良好的平衡噴射出電洞和電子。明確地說，藉由將 有機化合物層（有機EL層）之厚度設定爲200 nm或更少所 產生之裝置已達成一效能及以10 V之電壓的1,000 cd/in2 的亮度（luminance)，其迄今尙未被達成。 之後，直到目前爲止一直企圖獲以更低電壓的高亮度 發光。舉例來說，日本專利申請案公開第H07- 1 42 1 68號 揭示一 ITO陽極受到UV處理或電漿處理做爲形成有機 EL層之前的處理，藉此，發光臨界値減少以提高電流特 性，並且抑制發光特性隨著時間而劣化。 日本專利第3,704,88 3號揭示一陽極基板之形成方法 ，其中，在縮減壓力下一貫地實施在有機EL層的形成、 有機EL層的形成、陰極的形成前之處理。更明確地說， 藉由乾式蝕刻來實施陽極的圖案化，並且在縮減壓力下一 貫連續地實施UV臭氧處理和氧氣電漿處理，藉此，陽極 的表面變得乾淨，陽極被適當地氧化以提高電洞注射特性 -5- 200901818 ，使發光均勻，使驅動電壓減小，並且使壽命延長。 日本專利申請案公開第H11-045779號揭示一包含藉 由透過在縮減壓力下以臭氧產生機所產生的臭氧來潔淨陽 極基板以實施在有機EL層的形成前之處理，而沒有使用 UV-光或電漿之技術。 日本專利第3,3 94,1 3 0號揭示一技術，包含在0.000 1到 0.1 Pa的縮減壓力下，以具有指向性（directivity)之UV-光來照射基板，並且以更高的周圍壓力將基板運送至有機 EL層形成室以形成有機EL層，藉以防止基板被污染於在 有機EL層的形成前之處理的室中。 日本專利申請案公開第2000-3 5 3 593號掲示在一基板 上之第一電極被形成，且在有氧和氮的情況中被來自UV-光燈之UV-光所照射，藉此，具有第一電極之基板被潔淨 。其敘述較佳在潔淨期間將清潔室中的壓力調整爲4.00 Pa到周圍壓力，其亦敘述一例’即’使用負光阻來形成 分隔壁，之後導入氧和氮，並且在周圍壓力下潔淨具有第 一電極之基板。 在發光設備中所使用的有機EL裝置中，爲了界定在 基板側上之電極的發光區域和形狀，並且爲了致使電極能 夠單獨地發光，通常形成一主要包含樹脂材料及無機材料 之裝置分隔膜。通常藉由將基板側上之電極（下側電極）形 成爲陽極或陰極，而後藉由均勻地塗施樹脂材料、無機材 料、或其前驅物於電極的表面上’或者藉由使用諸如 CVD之膜形成方法來形成這樣的裝置分隔膜。 200901818 在具有裝置分隔膜的有機EL裝置中，可能無 到足夠的驅動耐久性特性，並且在某些情況中，在 保持於高溫及高濕度下之後，發光狀態可能變成不 這被認爲是由在上述裝置分隔膜的形成期間，於所 圖素電極上之裝置分隔膜材料或光阻製程中所使用 劑材料的殘餘物，以及由在裝置分隔膜中所儲存之 造成的。 此外，藉由上述UV處理或電漿處理來分解裝 膜，並且所分解之物質也被認爲由於黏著於會圖素 表面而造成上面的問題。也就是說，一直都沒有用 機EL層的形成前之處理的技術，其中，有效率地 有電極之基板和形成於其上之裝置分隔膜，並且滿 的驅動耐久性特性及離開（1 e a v i in g)耐久性特性。 在上面的日本專利第3,7〇4,8 83號中，藉由乾 來實施陽極的圖案化，並且在縮減壓力下一貫地實 臭氧處理和氧氣電漿處理，藉此，陽極的表面變得 並且陽極被適當地氧化以提高電洞注射特性。此外 以UV臭氧潔淨之方法，氧氣自高真空狀態導入， 得到0.0 1 torr(約1.3 3 Pa)的壓力，並且照射UV-光 但是，依據這種方法，不能夠形成裝置分隔膜 即將被使用之材料等等需要被嚴格地限制，所以不 成有機EL裝置爲一高品質的發光設備。 日本專利申請案公開第H1 1 -045779號使用包 以臭氧產生機所產生的臭氧來潔淨圖素電極的表面 法獲得 使裝置 均勻。 露出之 之抗蝕 水分所 置分隔 電極的 於在有 潔淨具 足充分 式鈾刻 施UV 乾淨， ，做爲 使得獲 3 ，或者 能夠達 含藉由 ，而沒 200901818 有使用UV-光或電漿之方法。但是，依據此方法，因爲不 能夠獲得以UV能量來切割分子間鍵的功效，所以污染物 和殘餘物的分解並未充分地進行。因此，不能夠獲得到優 異的驅動耐久性特性。 日本專利第3,394,130號使用包含在0.0001到0.1 Pa的 縮減壓力下照射具有指向性之UV-光的方法。但是，在此 壓力範圍中不能夠產生所需之量的臭氧和活性氧，而且不 能夠滿足優異的驅動耐久性特性。 在上面的日本專利申請案公開第2000-353593號中， 清潔室中的壓力爲4.00 Pa到周圍壓力，並且在此例中， 於周圍壓力下實施照射係較佳的。但是，在周圍壓力下， 殘留在電極之表面上的污染物和殘餘物進一步增加，與在 潔淨之前的狀態比較，其反而會使狀態劣化。此外，依據 本案發明人所實施的實驗，發現到4.00的壓力太低而不能 夠產生所需之量的臭氧和活性氧，而且不能夠獲得優異的 驅動耐久性特性。 【發明內容】 本發明提供一有機發光設備之製造方法，其滿足優異 的驅動耐久性特性及離開-劣化（leaving-degradation)耐久 性特性。 爲了達成上述目的，本發明提供一有機發光設備之製 造方法’該有機發光設備包含一基板、一形成於該基板上 之有機發光裝置、及一形成於該有機發光裝置之周圍上的 -8 - 200901818 裝置分隔膜，該有機發光裝置從該基板側按照所述之順序 包含一下側電極、一有機化合物層、及一上側電極，該方 法包含：藉由以UV-光來照射具有至少該下側電極和形成 於其上之該裝置分隔膜的基板，而同時將含有至少氧之氣 體導入大氣中，且在從10 Pa或更高到10,000 Pa或更低的 範圍中之壓力下排出該氣體，以潔淨該基板；形成一有機 化合物層於該經潔淨之下側電極上；以及形成一上側電極 於該有機化合物層上。 依據本發明，以UV·光來照射具有至少一下側電極 和形成於其上之裝置分隔膜的該基板，而同時在從10 Pa 或更高到10, 〇〇〇 Pa或更低的範圍中之壓力下，將含有至 少氧之氣體導入大氣中及排出該氣體。因此，獲得到優異 的驅動耐久性特性及離開耐久性特性。 明確地說，裝置分隔膜材料及抗飽劑材料的殘餘物和 殘留在下側電極上的汚染物於1 0 P a或更高到1 0，〇 〇 〇 p a或 更低的縮減壓力下，藉由UV-光的照射而以UV-光的能量 來予以分解。此外，以由UV-光所產生的臭氧和活性氧與 氧之反應’及縮減之周圍壓力的去除功能來有效率地去除 殘餘物和污染物。由於此，保持電洞和電子從下側電極注 射入有機E L層中之耐久性，其顯著地提高驅動耐久性特 性。 此外’甚至在裝置分隔膜儲存有水分的情況中，以少 量的UV-光來使裝置分隔膜的表面分解，並且水分由於縮 減之周圍壓力而被有效率地擴散於大氣中。因此，引人注 -9- 200901818 目地消除了可能在高溫及高濕度下離開設備後發生之發光 狀態的不均勻。此外，因爲周圍壓力係在從10 Pa或更高 到10,000 Pa或更低的範圍中，所以經分解之裝置分隔膜 黏著於下側電極之表面的問題不可能出現。 本發明之其他特徵將從下面參照附圖之代表性實施例 的說明而變得明顯。 【實施方式】 依據本發明之有機發光設備的製造方法係適合實施做 爲有機發光設備之製造方法，該有機發光設備包含一基板 、一形成於該基板上之有機發光裝置、及一形成於該有機 發光裝置之周圍上的裝置分隔膜。和一般有機發光裝置相 同的方式，本發明中之有機發光裝置從該基板側按照順序 包含一下側電極、一有機化合物層（有機EL層）、及一上 側電極。 該製造方法包含以U V -光來照射其上係形成有至少上 述下側電極和上述裝置分隔膜的基板，而同時在從1 〇 p a 或更高到10, 〇〇〇 Pa或更低的範圍中之壓力下，將含有至 少氧之氣體導入大氣中及自大氣中排出該氣體的潔淨程序 (前處理程序）。此外，該製造方法包含形成一有機化合物 層於該經潔淨之下側電極上的程序’以及形成一上側電極 於該有機化合物層上的程序。 習知上，烘烤處理通常係實施於真空下，以便在形成 裝置分隔膜之後，在形成有機EL層之前從裝置分隔膜中 -10- 200901818 去除水分。然後，在脫水之後，通常會形成有機el層， 而同時保持真空狀態，使得水分不會再次回到裝置分隔膜 〇 但是’依據本發明，經由UV-光之照射以使下側電極 之表面潔淨，而同時在實施真空烘烤之後，在比真空更高 之從10 Pa或更高到10, 〇〇〇 Pa或更低的縮減壓力環境下， 含氧氣體被導入大氣中及自大氣中排出該氣體。然後，在 潔淨之後’於真空下形成有機EL層，藉此，能夠獲得到 令人滿足的發光特性。本發明中的真空係指1 〇·6 Pa或更 高到1〇_2 Pa或更低的壓力範圍。 在下文中，將參照圖1來說明有機發光設備之組態及 製造程序。圖1係示意例舉構成本發明之有機發光設備的 一個有機發光裝置之剖面的視圖。 薄膜電晶體（TFT)2係排列及形成於包含玻璃、矽、或 塑膠膜之基板1上，以便對應於各圖素。如果有機發光裝 置爲頂部發光型有機發光裝置，則基板1並不需要具有透 光性。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of manufacturing an organic light-emitting device that can be used in an image display device, an illumination system, and the like. [Prior Art] In 1987, Tang et al. proposed an organic light-emitting device (organic EL (electroluminescence) device) having a configuration in which organic compounds having different carrier mobility were used. They are laminated, and holes and electrons are ejected from the anode and the cathode at a good balance, respectively. Specifically, a device produced by setting the thickness of the organic compound layer (organic EL layer) to 200 nm or less has achieved a performance and a luminance of 1,000 cd/in 2 at a voltage of 10 V, which So far, it has not been reached. Since then, it has been attempting to obtain high-intensity illumination with a lower voltage. For example, Japanese Patent Application Laid-Open No. H07- 1 42 1 68 discloses that an ITO anode is subjected to UV treatment or plasma treatment as a treatment before forming an organic EL layer, whereby the threshold of light emission is reduced to improve current characteristics. And the luminescence characteristics are suppressed from deteriorating with time. Japanese Patent No. 3,704,88, discloses a method of forming an anode substrate in which the formation of an organic EL layer, the formation of an organic EL layer, and the formation of a cathode are performed consistently under reduced pressure. More specifically, the patterning of the anode is carried out by dry etching, and the UV ozone treatment and the oxygen plasma treatment are continuously and continuously performed under reduced pressure, whereby the surface of the anode becomes clean and the anode is appropriately oxidized. Improve the hole injection characteristics -5 - 200901818 to make the light uniform, reduce the driving voltage, and extend the life. Japanese Patent Application Laid-Open No. H11-045779 discloses a process of cleaning an anode substrate by performing ozone generated by an ozone generator under reduced pressure to perform treatment before formation of an organic EL layer without using UV-light. Or plasma technology. Japanese Patent No. 3,3,94,130 discloses a technique for illuminating a substrate with a directivity of UV-light at a reduced pressure of 0.0001 to 0.1 Pa, and at a higher ambient pressure. The substrate is transported to the organic EL layer forming chamber to form an organic EL layer, thereby preventing the substrate from being contaminated in the chamber before the formation of the organic EL layer. Japanese Patent Application Publication No. 2000-3 5 3 593 shows that a first electrode on a substrate is formed and is irradiated with UV-light from a UV lamp in the presence of oxygen and nitrogen, whereby The substrate having the first electrode is cleaned. The description preferably adjusts the pressure in the clean room to 4.00 Pa to the ambient pressure during the cleaning period. It also describes an example of using a negative photoresist to form a partition wall, then introducing oxygen and nitrogen, and purifying under ambient pressure. The substrate of the first electrode. In the organic EL device used in the light-emitting device, in order to define the light-emitting region and shape of the electrode on the substrate side, and in order to cause the electrode to emit light individually, a device separation film mainly containing a resin material and an inorganic material is usually formed. The electrode (the lower electrode) on the substrate side is usually formed as an anode or a cathode, and then by uniformly applying a resin material, an inorganic material, or a precursor thereof to the surface of the electrode' or by using, for example, CVD. A film formation method is used to form such a device separation film. 200901818 In an organic EL device having a device separation film, there may be insufficient driving durability characteristics, and in some cases, after being kept at a high temperature and high humidity, the light-emitting state may become non-this is considered to be During the formation of the device separation film described above, the device on the pixel electrode separates the film material or the residue of the agent material used in the photoresist process, and is caused by storage in the device separation film. Further, the film is decomposed by the above-described UV treatment or plasma treatment, and the substance to be decomposed is also considered to cause the above problem due to adhesion to the surface of the pixel. That is to say, there has been no technology for processing before the formation of the EL layer, in which the substrate of the electrode and the device separation film formed thereon are efficiently, and the driving durability characteristics and the leaving are full (1 eavi In g) durability characteristics. In the above Japanese Patent No. 3,7,4,8,83, the patterning of the anode is carried out by dryness, and the ozone treatment and the oxygen plasma treatment are consistently performed under reduced pressure, whereby the surface of the anode is changed. The anode is suitably oxidized to improve the hole injection characteristics. In addition, by the method of UV ozone cleaning, oxygen is introduced from a high vacuum state to obtain a pressure of 0.01 Torr (about 1.3 3 Pa), and UV-light is irradiated. However, according to this method, it is impossible to form a device separation film to be used. Materials and the like need to be strictly limited, so that the organic EL device is not a high-quality light-emitting device. Japanese Patent Application Laid-Open No. H1 1-045779 uses a surface-purifying method for purifying a pixel electrode by ozone generated by an ozone generator to make the device uniform. The exposed electrode of the resist is placed in a clean and sufficient uranium to apply UV, so as to obtain 3, or to achieve the use of, but not 200901818 to use UV-light or plasma method. However, according to this method, since the effect of cutting the intermolecular bonds by UV energy cannot be obtained, the decomposition of contaminants and residues is not sufficiently performed. Therefore, excellent drive durability characteristics cannot be obtained. Japanese Patent No. 3,394,130 uses a method of irradiating UV light having directivity under a reduced pressure of 0.0001 to 0.1 Pa. However, the required amount of ozone and active oxygen cannot be produced in this pressure range, and excellent driving durability characteristics cannot be satisfied. In the above Japanese Patent Application Laid-Open No. 2000-353593, the pressure in the clean room is 4.00 Pa to the ambient pressure, and in this case, it is preferred to carry out the irradiation under ambient pressure. However, under ambient pressure, the contaminants and residues remaining on the surface of the electrode are further increased, which in turn deteriorates the state as compared with the state before cleaning. Further, according to experiments conducted by the inventors of the present invention, it was found that the pressure of 4.00 was too low to produce the required amount of ozone and active oxygen, and excellent driving durability characteristics could not be obtained. SUMMARY OF THE INVENTION The present invention provides a method of manufacturing an organic light-emitting device that satisfies excellent driving durability characteristics and leaving-degradation durability characteristics. In order to achieve the above object, the present invention provides a method of fabricating an organic light-emitting device. The organic light-emitting device includes a substrate, an organic light-emitting device formed on the substrate, and a -8 formed on the periphery of the organic light-emitting device. 200901818 A device separating film, the organic light emitting device comprising, from the substrate side, a lower side electrode, an organic compound layer, and an upper side electrode in the stated order, the method comprising: irradiating with at least the lower side by UV-light irradiation The electrode and the device formed thereon separate the substrate of the film while simultaneously introducing a gas containing at least oxygen into the atmosphere, and discharging the gas at a pressure ranging from 10 Pa or more to 10,000 Pa or less, To clean the substrate; form an organic compound layer on the cleaned lower side electrode; and form an upper electrode on the organic compound layer. According to the present invention, the substrate having at least the lower side electrode and the device separation film formed thereon is irradiated with UV light at the same time in a range from 10 Pa or higher to 10, 〇〇〇Pa or lower. Under the pressure, a gas containing at least oxygen is introduced into the atmosphere and discharged. Therefore, excellent driving durability characteristics and leaving durability characteristics are obtained. Specifically, the device separation film material and the residue of the anti-saturated material and the contaminants remaining on the lower electrode are reduced at a pressure of 10 Pa or higher to 10, 〇〇〇pa or lower. It is decomposed by the energy of UV-light by the irradiation of UV-light. In addition, residues and contaminants are efficiently removed by the reaction of ozone and reactive oxygen and oxygen generated by UV-light and the reduced peripheral pressure. Due to this, the durability of the holes and electrons injected from the lower electrode into the organic EL layer is maintained, which significantly improves the driving durability characteristics. Further, even in the case where moisture is stored in the device separation film, the surface of the device separation film is decomposed with a small amount of UV-light, and moisture is efficiently diffused into the atmosphere due to the contracted surrounding pressure. Therefore, it is remarkable that -9-200901818 has eliminated the unevenness of the illuminating state which may occur after leaving the device at high temperature and high humidity. Further, since the ambient pressure is in the range from 10 Pa or more to 10,000 Pa or less, the problem that the disassembled device partition film adheres to the surface of the lower electrode is unlikely to occur. Other features of the present invention will become apparent from the following description of the exemplary embodiments. Embodiments of the present invention are directed to a method of fabricating an organic light-emitting device, the organic light-emitting device comprising a substrate, an organic light-emitting device formed on the substrate, and a method The device on the periphery of the organic light-emitting device separates the film. In the same manner as the general organic light-emitting device, the organic light-emitting device of the present invention includes, in order from the substrate side, a lower electrode, an organic compound layer (organic EL layer), and an upper electrode. The manufacturing method includes irradiating, by UV-light, a substrate on which at least the lower electrode and the device separation film are formed, while being in a range from 1 〇pa or higher to 10, 〇〇〇Pa or lower. Under the pressure of the medium, a clean process (pre-treatment program) for introducing at least oxygen gas into the atmosphere and discharging the gas from the atmosphere. Further, the manufacturing method includes a procedure of forming an organic compound layer on the cleaned lower side electrode and a procedure of forming an upper side electrode on the organic compound layer. Conventionally, the baking treatment is usually carried out under vacuum to remove moisture from the device separation film -10-200901818 after forming the device separation film, before forming the organic EL layer. Then, after dehydration, an organic el layer is usually formed while maintaining a vacuum so that moisture does not return to the device separation membrane again. However, according to the present invention, the surface of the lower electrode is cleaned by UV-light irradiation. At the same time, after the vacuum baking is performed, the oxygen-containing gas is introduced into the atmosphere and discharged from the atmosphere under a reduced pressure environment of 10 Pa or higher to 10, 〇〇〇Pa or lower than vacuum. The gas. Then, the organic EL layer is formed under vacuum after being cleaned, whereby satisfactory light-emitting characteristics can be obtained. The vacuum in the present invention means a pressure range of 1 〇·6 Pa or higher to 1 〇 2 Pa or lower. Hereinafter, the configuration and manufacturing procedure of the organic light-emitting device will be explained with reference to FIG. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a view schematically showing a cross section of an organic light-emitting device constituting the organic light-emitting device of the present invention. A thin film transistor (TFT) 2 is arranged and formed on a substrate 1 including a glass, germanium, or plastic film so as to correspond to each pixel. If the organic light-emitting device is a top-emission type organic light-emitting device, the substrate 1 does not need to have light transmittance.
在基板1上，設置層間絕緣膜3，以便覆蓋TFT 2，並 且該層間絕緣膜3係設有使配線（未例舉出）到達τ F T 2之連 接孔4。做爲層間絕緣膜3，可以使用包含氧化矽（Si〇2)或 氮化矽（Si3N4)之無機材料膜；但是，希望藉由隱藏TFT 和配線部分的不平坦以使膜表面平坦，所以通常設置幾 μπι到幾十μιη之厚度的丙烯酸樹脂膜。 經由連接孔4而被連接至配線的下側電極5被圖案化， -11 - 200901818 以便對應於層間絕緣膜3上之各圖素（有機發光裝置）。下 側電極5，舉例來說，被使用做爲有機發光裝置的陽極。 因此’如果該有機發光裝置爲頂部發光型有機發光裝置， 則使用具有高反射率之材料（諸如，C r，A g，A1)，或者其 具有其他金屬的合金。爲了提高電荷的注射效率，也有可 能層疊包含ITO或IZO之導電氧化物膜。在下側表面發 光類型的情況中，使用I T ◦、I z 0等等。 爲本發明之特徵的形成有機EL層前之處理能夠被最 佳第使用於有機發光裝置，而在該有機發光裝置中，基板 側電極（下側電極5)爲陽極，以便提高功函數。但是，甚 至在基板側電極爲陰極的情況中，也能夠獲得該功效。 在層間絕緣膜3上，設置裝置分隔膜6，以便覆蓋下側 電極5的周圍。裝置分隔膜6包含開口部分7，該開口部分7 被圖案化以便僅使該下側電極5的表面暴露出，開口部分7 實質上用做爲該有機發光裝置中的發光部分。 做爲裝置分隔膜6，適當地使用包含感光性聚醯亞胺 、丙嫌酸樹脂等等之樹脂材料膜，或者包含氧化砂（Si〇2) 之無機材料膜。 因此，希望具有至少下側電極5和形成於其上之裝置 分隔膜6的基板被製造，受到以各種溶劑、表面活性劑、 純水等等之溼式潔淨，以及受到藉由在真空下加熱於約 1 0 0 °C到2 0 0 °C的脫水作用。 在藉由加熱的脫水作用之後，緊接著有機EL層（有機 化合物層）8的形成之前立即實施爲本發明之特徵的前處理 -12- 200901818 程序。明確地說’在連接至用以形成有機EL層8之真空 氣相沉積設備的基板前處理設備中，上面的裝置基板被處 理。 圖2爲例舉本發明之基板前處理設備的示意圖。參考 數字31表示真空槽，參考數字32表示UV -燈，參考數字33 表示基板（裝置基板），參考數字34表示質量流量控制器， 參考數字35表示真空計’參考數字3 6表示壓力控制器，及 參考數字37表示變動閥。 基板前處理設備包含一被設計而藉由連接至變動閥3 7 來抗臭氧之乾式泵，而變動閥37之開口部分能夠被調整， 以及一能夠在高真空下排放的渦輪分子泵。壓力控制器36 根據真空計3 5來調整變動閥3 7之開口部分，基板3 3係藉由 調節周圍壓力而受到以UV -燈32之UV -臭氧處理，且同時 諸如乾空氣及氧之氣體正用這些機制和質量流量控制器3 4 來予以導入。 希望即將被導入之諸如乾空氣及氧的氣體含有盡可能 少的水分，且適當地使用具有-70°C之露點的氣體。 做爲UV照射源（燈）32，能夠使用低壓水銀燈及準分 子燈。在含有至少氧之氣體正以0.1 slm到500 slm之範圍 中的方式而被導入，且周圍壓力正以10 Pa到1 0,000 Pa之 範圍中的方式而被導入時，以UV光照射基板33持續0.5 分鐘到60分鐘的時間。基板33與UV-燈32之間的距離希望 是在1 mm到5 0 mm的範圍中，並且爲了使照射強度均勻 ，希望基板33或UV-燈32被搖動。在照射UV光一段預定 -13- 200901818 的時間之後或者在UV光正被輻射的同時，停止氣體的導 入’並且基板目Ij處理設備被抽空而到達丨0 -3 P a或更低的 真空。之後’基板3 3被快速地運送至真空氣相沉積設備， 而同時保持高的真空氛圍。 在周圍壓力低於10 Pa的情況中，即使氧氣被導入於 大氣中並且被排出，去除下側電極5之表面上的污染物和 殘餘物之分解物質所需之臭氧及活性氧的量係不足夠的。 因此’不能夠滿足優異的驅動耐久性特性，並且顯著地抑 制載子從下側電極5到有機E L層8之注入。 此外，在周圍壓力高於1 0,0 0 0 P a的情況中，在下側 電極5之表面上殘餘的污染物和殘餘物增加更多，驅動耐 久性特性劣化，在裝置分隔膜6中所儲存的水分不可能被 擴散於大氣中，並且特別是在高溫及高濕度下，可能使離 開-劣化（1 e a v i n g - d e g r a d a t i ο η)耐久性特性劣化。 在有機EL層之形成前的處理之後，有機EL層8被形 成於所運送之裝置基板上，主要使用真空加熱氣相沉積法 。做爲形成有機EL層8之方法，除了真空加熱氣相沉積 法之外，EB氣相沉積法、LB法、旋塗法、噴墨法、熱轉 印法等等。藉由連續地層疊而獲得到有機EL層8，例如 ，電洞運送層、發光層、電子運送層、電子注射層等等。 在形成有機EL層於真空下之情況中’如同在真空加 熱氣相沉積法中，通常，從藉由加熱基板之脫水到下面的 密封程序的製程被一貫地實施於真空下。因此’能夠使大 氣對有機EL層的影響達最小。但是’依據本發明，在基 -14- 200901818 板前處理的程序期間藉由增加高於真空的壓力，並且在1 ο Pa或更高到1 0,000 Pa或更低的縮減壓力下潔淨基板，能 夠顯著地提高有機發光裝置之驅動耐久性特性及離開-劣 化耐久性特性。 接著，上側電極（陰極）9被設置以便覆蓋有機EL層8 。上側電極9被設置做爲在基板1之上方的一層，當做爲各 個圖素所共有的電極。在頂部發射型的情況中，上側電極 9具有光透性。通常，使用包含包含ITO、IZO等等之導 電氧化物膜。在下側表面發光型的情況中，上側電極9爲 反射電極’且Al，Ag或其與另一金屬之合金被適當地使用 〇 此外，爲了防止水分滲透至有機EL層8，有機發光 裝置被密封。包含諸如氧化矽或氮化矽之無機材料膜或聚 合物膜的透明保護膜10可以被提供來密封有機發光裝置。 在此情況中’在形成有機EL層之後一直到密封程序之製 程適合被實施於真空下。此外/或者，有機發光裝置可以 用諸如玻璃板之蓋材料來予以密封。在此情況中，諸如氮 之惰性氣體被密封於該蓋材料與有機發光裝置之間的間隙 中係較佳的’且在此情況中，有機發光裝置在密封程序之 前自真空解除。 在上面的實施例中，在基板上設置一個有機發光裝置 。但是’本發明係可應用於一顯示設備，其中，多個有機 發光裝置係配置於基板上，各個有機發光裝置構成一圖素 。該多個有機發光裝置之驅動可爲主動矩陣型，其中，各 -15- 200901818 圖素包含一控制各發光裝置之發光的切換元件，或者可爲 被動矩陣型’其中，發光裝置係形成於條形電極的交叉點 處。 藉由本發明之製造方法所製造的有機發光設備能夠被 使用於各種電子器具的顯示部分、照明系統的發光部分等 等。電子器具的例子包含電視、個人電腦、數位照相機、 移動式電話、移動式音樂播放設備、個人數位助理（PDA) 、及汽車導航系統。 在下文中，依據本發明之有機發光設備的製造方法將 經由舉例及其結果來予以說明。此外，表1總結實例及比 較例的設定條件和結果。此外，圖3例舉實例中之有機發 光設備的製造流程，及在各個程序中之壓力的改變。 (實例υ 具有2μιη之厚度的裝置分隔膜係使用正感光性聚醯亞 胺樹脂而被形成於基板的整個表面之上，而形成於Ag合 金膜（厚度：100 nm)上之ITO膜（厚度：60 nm)被設置於 基板上做爲陽極（下側電極）。接著，藉由以UV-燈來曝光 而使裝置分隔膜圖案化，藉此，形成開口部分。 如此所獲得之裝置基板以界面劑之水溶液來予以潔淨 ，並且以離子交換水和超音波來予以沖洗。 已潔淨之裝置基板被放置於真空乾燥器中，藉此，於 2 0 0 °C實施脫水2 4小時。 受到脫水之裝置基板被引導進基板前處理設備中，和 -16- 200901818 低壓水銀燈（輸出：1 10 w)相對，並且以20 mm/sec的速率 搖動於5 0 mm之間隔的範圍中，燈與基板之間最短距離爲 5 mm。基板前處理設備被抽空而獲得到5x1 (Γ5 Pa的高真 空狀態，且之後，具有-8(TC之露點的乾空氣以10 slm之 流動速率而被導入於基板前處理設備中。當基板前處理設 備中的壓力到達1，〇〇〇 Pa時，以壓力控制器來取得排氣壓 力之平衡，而同時乾空氣正被導入，藉此，使基板前處理 設備中的壓力保持在1,000 Pa。 在此狀態中，以UV-光來照射裝置基板而受到UV臭 氧處理10分鐘。 在經過10分鐘之後，停止UV-光的照射，以中止乾空 氣的導入，藉此，使基板前處理設備排氣抽空。 當基板前處理設備中的壓力到達lxl〇_3 Pa時，裝置 基板被運送至維持在1x1 〇_3到5x1 0_4 Pa之真空氣相沉積設 備的有機EL層氣相沉積室，且有機EL層、上側電極及 保護膜經由後續的程序而被連續地層疊。 Ν，Ν-α -二萘聯苯胺（dinaphthylbenzidine)(a -NPD)係 受到真空-沉積而在從開口部分所露出之陽極上具有40 nm 的厚度，藉此，形成電洞運送層。然後，香豆素6(1.0 vol%)和三[8-羥基喹啉酸]鋁（Alq3)之共同沉積膜被形成而 具有30 nm的厚度，藉此，形成發光層。接著，做爲電子 運送層，三[8-羥基喹啉酸]鋁（Alq3)被形成而具有1〇 nm 的厚度。此外，碳酸铯（0.7 vol%)和三[8-羥基喹啉酸]鋁 (Alq3)之共同沉積膜被形成而具有40 nm的厚度，藉此， -17- 200901818 形成電子注入層。各層相當於有機EL層。 然後，基板被運送至真空氣相沉積設備的濺射室’且 銦錫氧化物（ITO)在0.6 Pa的壓力下且同時Ar氣體正藉由 濺射而被導入（100 seem)而被形成爲一具有220 nm之厚度 的膜，藉此，形成陰極9。此外，氧氣體（0.2 seem)和氮氣 體（10 seem)被導入，且矽（Si)靶材在0.6 Pa的壓力下受到 反應濺射，藉此，透明的氮氧化矽膜（Si-Ο-Ν)被形成而具 有500 nm的厚度，藉此，形成表面保護膜10。其後，完 成膜形成程序之基板被運送至手套箱，並且以含有乾燥劑 之玻璃蓋來密封手套箱於氮氣氛圍中。 經由上面之製'造程序所獲得到之有機發光設備的有機 發光裝置（發射綠光）係以恆定的電流（以100 mA/cm2之電 流値）而被連續點亮1 00小時，並且以亮度計（由Topcon公 司所製造之BM-7)來測量初始亮度和10〇小時之後的亮度 ’藉此’評估發光特性上的改變。亮度改變L(100h)/L(ini)爲 95.0%(初始亮度L(ini)=l，300 Cd/m2)，且獲得到優異的驅 動及壽命特性。 然後’有機發光設備被放置在恆溫恆濕箱中於8 0 t之 溫度和80%之濕度，藉此’實施ι,〇〇〇小時之離開評估 (leaving evaluation)。當離開後之發光狀態被觀察時，發 現到綠光被均勻地發射’如同在離開前的情況中。 (實例2) 以和實例1中之相同方式來製造裝置基板，除了使用 "18- 200901818 具有500 nm之厚度的Cr膜做爲陽極，接著潔淨和脫水之 外。此外，做爲形成有機EL層之前的處理’以和實例1 中之相同方式來實施UV臭氧處理，除了將周圍壓力設定 爲100 Pa之外。 以和實例1中之相同方式來評估所獲得到之有機發光 設備，而發現到L(l〇〇hVL(ini)爲94.5%(初始亮度L(ini) =1,05 0 cd/m2)，且和實例1中相同，有機發光設備具有優 異的驅動及壽命特性。此外，在離開於80 °C之溫度和80% 之濕度1，〇〇〇小時之後的發光狀態係和在離開之前的情況 相同。 (實例3) 以和實例1中之相同方式，使用在實例1中所使用之裝 置基板按照原樣來製造有機發光設備，除了在形成有機 EL層之前的處理期間之壓力爲10, 〇〇〇 Pa之外。 以和實例1中之相同方式來評估所獲得到之有機發光 設備，而發現到L(100h)/L(ini)爲92.8%(初始亮度L(ini) =1，290 cd/m2)’且有機發光設備具有優異的驅動及壽命 特性，儘管它們略遜於實例1中之驅動及壽命特性。此外 ，在離開於8 0 °C之溫度和8 0 %之濕度1，0 0 0小時之後的發光 狀態係和在離開之前的情況相同。 (實例4) 以和實例1中之相同方式，使用在實例1中所使用之裝 -19- 200901818 置基板按照原樣來製造有機發光設備，除了在形成有機 EL層之前的處理期間之壓力爲1〇 Pa，即將被導入之氣體 爲具有99.9 %純度的氧氣，導入流動速率爲0.5 slm’及 UV-光照射時間爲20分鐘之外。 以和實例1中之相同方式來評估所獲得到之有機發光 設備，而發現到L(100h)/L(ini)爲91.6%(初始亮度L(ini) =1,2 10 cd/m2)，且有機發光設備具有在實際使用上並沒 有任何問題的驅動及壽命特性，儘管它們略遜於其他實例 中之驅動及壽命特性。此外，在離開於8 0 °C之溫度和8 0% 之濕度1，〇〇〇小時之後的發光狀態係和在離開之前的情況 相同。 (比較例1) 以和實例1中之相同方式，使用在實例1中所使用之裝 置基板按照原樣來製造有機發光設備，除了在形成有機 EL層之前的處理期間之壓力爲101，300 Pa(大氣壓力）之外 〇 以和實例1中之相同方式來評估所獲得到之有機發光 設備，而發現到L(100h)/L(ini)爲90.5%(初始亮度L(ini) =1,3 00 cd/m2)，且有機發光設備之驅動及壽命特性遜於 上面實例中之驅動及壽命特性。此外，在有機發光設備離 開於8 0 °C之溫度和8 0 %之濕度1，0 0 0小時之後，觀察到圖素 之周圍部分變暗，而這在離開之前並未被觀察到。 -20- 200901818 (比較例2) 以和實例1中之相同方式，使用在實例1中所使用之裝 置基板按照原樣來製造有機發光設備，除了在形成有機 EL層之前的處理期間之壓力爲5 Pa，即將被導入之氣體 爲具有99.9%純度的氧氣，導入流動速率爲0.05 slm，及 UV-光照射時間爲20分鐘之外。 以和實例1中之相同方式來評估所獲得到之有機發光 設備，而發現到L(1 00h)/L(ini)爲1 0.5%(初始亮度L(ini) =1,2〇0 cd/m2)，且有機發光設備之驅動及壽命特性不良 。此外，在有機發光設備離開於80°C之溫度和80%之濕度 1，〇〇〇小時之後，觀察到整個發光部分變暗。 (比較例3) 以和實例1中之相同方式，使用在實例2中所使用之裝 置基板按照原樣來製造有機發光設備，除了在形成有機 EL層之前的處理期間之壓力爲1〇1，300 Pa(大氣壓力）之外 〇 以和實例1中之相同方式來評估所獲得到之有機發光 設備，而發現到L(100h)/L(ini)爲89.0%(初始亮度L(ini) =1，300 cd/m2)，且有機發光設備之驅動及壽命特性遜於 上面實例中之驅動及壽命特性。此外，在有機發光設備離 開於80°C之溫度和80%之濕度1,000小時之後，觀察到圖素 之周圍部分變暗，而這在離開之前並未被觀察到。 -21 - 200901818 表1 臭氧處理條件 L(100h)/L(ini) 在離開於80°C 周圍 即將被導 導入量 照射時間 在 100mA/cm2 及 80%1,000 壓力 入之氣體 (slm) (min) 小時之後 實例1 1,000 乾空氣 10 10 95 均勻 實例2 100 乾空氣 10 10 94.5 均勻 實例3 10,000 乾空氣 10 10 92.8 均勻 實例4 10 氧氣 0.5 20 91.6 均勻 比較例1 101,300 乾空氣 10 10 90.5 周圍變暗 比較例2 5 氧氣 0.05 20 10.5 整個部分變暗 比較例3 101,300 乾空氣 10 10 89.0 周圍變暗 在本發明已經參照代表性實施例來做說明的同時，將 會了解到本發明並不限於所揭露之代表性實施例。下面之 申請專利範圍的範疇係依照其最廣的解釋，以便包括所有 如此之修正及等同之結構和功能。 【圖式簡單說明】 圖1係例舉依據本發明之有機發光設備之典型局部剖 面結構的示意圖。 圖2係基板前處理設備之示意圖。 圖3係例舉在依據本發明一例之有機發光設備之各個 製程中，壓力之變化的製造流程和視圖。 【主要元件符號說明】 1 :基板 2 :薄膜電晶體（TFT) -22- 200901818 3 :層間絕緣膜 4 :連接孔 5 :下側電極 6 :裝置分隔膜 7 :開口部分 8 :有機EL層（有機化合物層 3 1 :真空槽 32 : UV-燈 33 :基板（裝置基板） 3 4 :質量流量控制器 3 5 :真空計 3 6 :壓力控制器 3 7 :變動閥 9 :上側電極（陰極） 1 〇 :保護膜 -23On the substrate 1, an interlayer insulating film 3 is provided so as to cover the TFT 2, and the interlayer insulating film 3 is provided with a connection hole 4 for wiring (not shown) to reach τ F T 2 . As the interlayer insulating film 3, an inorganic material film containing yttrium oxide (Si〇2) or tantalum nitride (Si3N4) can be used; however, it is desirable to hide the surface of the film by hiding the unevenness of the TFT and the wiring portion, so usually An acrylic resin film having a thickness of several μm to several tens of μm is provided. The lower electrode 5 connected to the wiring via the connection hole 4 is patterned, -11 - 200901818 so as to correspond to each pixel (organic light-emitting device) on the interlayer insulating film 3. The lower electrode 5, for example, is used as an anode of an organic light-emitting device. Therefore, if the organic light-emitting device is a top-emission type organic light-emitting device, a material having high reflectance (such as C r, A g, A1) or an alloy having other metals is used. In order to increase the injection efficiency of the charge, it is also possible to laminate a conductive oxide film containing ITO or IZO. In the case of the lower surface emitting type, I T ◦, I z 0 and the like are used. The process before the formation of the organic EL layer which is a feature of the present invention can be preferably used for the organic light-emitting device, and in the organic light-emitting device, the substrate-side electrode (the lower electrode 5) is an anode in order to improve the work function. However, even in the case where the substrate-side electrode is a cathode, this effect can be obtained. On the interlayer insulating film 3, a device separation film 6 is provided so as to cover the periphery of the lower side electrode 5. The device separation film 6 includes an opening portion 7 which is patterned so as to expose only the surface of the lower electrode 5, and the opening portion 7 is substantially used as a light-emitting portion in the organic light-emitting device. As the device separation film 6, a resin material film containing photosensitive polyimide, acrylic acid or the like, or an inorganic material film containing oxidized sand (Si〇2) is suitably used. Therefore, it is desirable that the substrate having at least the lower electrode 5 and the device separation film 6 formed thereon is manufactured by wet cleaning with various solvents, surfactants, pure water, and the like, and by heating under vacuum. Dehydration at about 100 ° C to 200 ° C. Immediately after the dehydration by heating, immediately before the formation of the organic EL layer (organic compound layer) 8, the pretreatment -12-200901818 procedure which is a feature of the present invention is carried out. Specifically, in the substrate pretreatment apparatus connected to the vacuum vapor deposition apparatus for forming the organic EL layer 8, the above device substrate is processed. Fig. 2 is a schematic view showing a substrate pretreatment apparatus of the present invention. Reference numeral 31 denotes a vacuum chamber, reference numeral 32 denotes a UV-lamp, reference numeral 33 denotes a substrate (device substrate), reference numeral 34 denotes a mass flow controller, and reference numeral 35 denotes a vacuum gauge 'reference numeral 36 denotes a pressure controller, And reference numeral 37 denotes a variable valve. The substrate pretreatment apparatus includes a dry pump designed to be resistant to ozone by being connected to a variable valve 37, and the opening portion of the variable valve 37 can be adjusted, and a turbo molecular pump capable of discharging under high vacuum. The pressure controller 36 adjusts the opening portion of the variable valve 37 according to the vacuum gauge 35, which is subjected to UV-ozone treatment of the UV lamp 32 by adjusting the ambient pressure, and at the same time, a gas such as dry air and oxygen. These mechanisms and mass flow controllers 34 are being used for importing. It is desirable that the gas to be introduced, such as dry air and oxygen, contain as little moisture as possible, and a gas having a dew point of -70 ° C is suitably used. As the UV irradiation source (lamp) 32, a low-pressure mercury lamp and a quasi-molecular lamp can be used. When the gas containing at least oxygen is introduced in a range of 0.1 slm to 500 slm, and the ambient pressure is introduced in a range of 10 Pa to 10,000 Pa, the substrate 33 is irradiated with UV light. 0.5 minutes to 60 minutes. The distance between the substrate 33 and the UV-lamp 32 is desirably in the range of 1 mm to 50 mm, and in order to make the irradiation intensity uniform, it is desirable that the substrate 33 or the UV-lamp 32 be shaken. After the irradiation of the UV light for a predetermined period of -13 - 200901818 or while the UV light is being irradiated, the introduction of the gas is stopped and the substrate processing apparatus is evacuated to reach a vacuum of 丨0 -3 P a or lower. Thereafter, the substrate 3 3 is quickly transported to the vacuum vapor deposition apparatus while maintaining a high vacuum atmosphere. In the case where the ambient pressure is lower than 10 Pa, even if oxygen is introduced into the atmosphere and discharged, the amount of ozone and active oxygen required to remove the pollutants on the surface of the lower electrode 5 and the decomposition substance of the residue is not enough. Therefore, the excellent driving durability characteristics are not satisfied, and the injection of the carrier from the lower electrode 5 to the organic EL layer 8 is remarkably suppressed. Further, in the case where the ambient pressure is higher than 10,0 0 P P a , the residual contaminants and residues on the surface of the lower electrode 5 are more increased, and the driving durability characteristics are deteriorated, which is in the device separation film 6 The stored moisture cannot be diffused into the atmosphere, and particularly at high temperatures and high humidity, the leaving-degradation (1 eaving - degradati ο η) durability characteristics may be deteriorated. After the treatment before the formation of the organic EL layer, the organic EL layer 8 is formed on the substrate of the device to be transported, mainly using a vacuum heating vapor deposition method. As a method of forming the organic EL layer 8, in addition to the vacuum heating vapor deposition method, an EB vapor deposition method, an LB method, a spin coating method, an ink jet method, a thermal transfer method, or the like. The organic EL layer 8 is obtained by continuous lamination, for example, a hole transport layer, a light-emitting layer, an electron transport layer, an electron injection layer, and the like. In the case where the organic EL layer is formed under vacuum, as in the vacuum heating vapor deposition method, generally, the process from the dehydration by heating the substrate to the following sealing process is consistently carried out under vacuum. Therefore, it is possible to minimize the influence of the atmosphere on the organic EL layer. However, according to the present invention, it is possible to clean the substrate by increasing the pressure higher than the vacuum during the pre-plate processing of the base-14-200901818 and at a reduced pressure of 1 ο Pa or higher to 10,000 Pa or less. The driving durability characteristics and the leaving-degradation durability characteristics of the organic light-emitting device are improved. Next, an upper electrode (cathode) 9 is provided so as to cover the organic EL layer 8. The upper electrode 9 is provided as a layer above the substrate 1 as an electrode common to the respective pixels. In the case of the top emission type, the upper electrode 9 has light permeability. Usually, a conductive oxide film containing ITO, IZO or the like is used. In the case of the lower surface light-emitting type, the upper electrode 9 is a reflective electrode ' and Al, Ag or an alloy thereof with another metal is suitably used. Further, in order to prevent moisture from penetrating into the organic EL layer 8, the organic light-emitting device is sealed. . A transparent protective film 10 containing an inorganic material film or a polymer film such as hafnium oxide or tantalum nitride may be provided to seal the organic light-emitting device. In this case, the process after the formation of the organic EL layer up to the sealing process is suitable to be carried out under vacuum. Additionally or alternatively, the organic light-emitting device can be sealed with a cover material such as a glass plate. In this case, an inert gas such as nitrogen is sealed in a gap between the cap material and the organic light-emitting device, and in this case, the organic light-emitting device is released from the vacuum before the sealing process. In the above embodiment, an organic light-emitting device is disposed on the substrate. However, the present invention is applicable to a display device in which a plurality of organic light-emitting devices are disposed on a substrate, and each of the organic light-emitting devices constitutes a pixel. The driving of the plurality of organic light-emitting devices may be an active matrix type, wherein each of the -15-200901818 pixels includes a switching element that controls the light emission of each of the light-emitting devices, or may be a passive matrix type, wherein the light-emitting device is formed on the strip At the intersection of the electrodes. The organic light-emitting device manufactured by the manufacturing method of the present invention can be used for display portions of various electronic appliances, light-emitting portions of illumination systems, and the like. Examples of electronic appliances include televisions, personal computers, digital cameras, mobile phones, mobile music playback devices, personal digital assistants (PDAs), and car navigation systems. Hereinafter, a method of manufacturing an organic light-emitting device according to the present invention will be explained by way of examples and results thereof. In addition, Table 1 summarizes the setting conditions and results of the examples and comparative examples. Further, Fig. 3 exemplifies a manufacturing process of the organic light-emitting device in the example, and a change in pressure in each program. (Example 装置 A device separation film having a thickness of 2 μm was formed on the entire surface of a substrate using a positive photosensitive polyimide resin, and an ITO film (thickness) formed on an Ag alloy film (thickness: 100 nm) : 60 nm) is disposed on the substrate as an anode (lower electrode). Then, the device separation film is patterned by exposure with a UV lamp, thereby forming an opening portion. The device substrate thus obtained is The aqueous solution of the interface agent is cleaned and rinsed with ion-exchanged water and ultrasonic waves. The cleaned device substrate is placed in a vacuum dryer, whereby dehydration is carried out at 200 ° C for 24 hours. The device substrate is guided into the substrate pretreatment device, opposite to the -16-200901818 low-pressure mercury lamp (output: 1 10 w), and is rocked at a rate of 20 mm/sec in the range of 50 mm intervals, the lamp and the substrate The shortest distance between them is 5 mm. The substrate pretreatment equipment is evacuated to obtain a high vacuum of 5x1 (Γ5 Pa, and thereafter, -8 (dry dew of TC is introduced into the substrate at a flow rate of 10 slm) Front In the device, when the pressure in the substrate pretreatment device reaches 1, 〇〇〇Pa, the pressure controller is used to obtain the balance of the exhaust pressure, while the dry air is being introduced, thereby making the substrate pretreatment device The pressure was maintained at 1,000 Pa. In this state, the device substrate was irradiated with UV-light and subjected to UV ozone treatment for 10 minutes. After 10 minutes passed, the irradiation of UV-light was stopped to stop the introduction of dry air. The substrate pretreatment apparatus is evacuated. When the pressure in the substrate pretreatment apparatus reaches lxl〇_3 Pa, the device substrate is transported to the organic EL of the vacuum vapor deposition apparatus maintained at 1x1 〇_3 to 5x1 0_4 Pa. a layer vapor deposition chamber, and the organic EL layer, the upper electrode, and the protective film are successively laminated via a subsequent procedure. Ν, dina-α-dinaphthylbenzidine (a-NPD) is subjected to vacuum-deposition. A thickness of 40 nm is formed on the anode exposed from the opening portion, whereby a hole transport layer is formed. Then, coumarin 6 (1.0 vol%) and tris[8-hydroxyquinolinic acid] aluminum (Alq3) are formed. Co-deposited film is formed with 30 nm Then, a light-emitting layer was formed, and then, as an electron transport layer, tris[8-hydroxyquinolinic acid]aluminum (Alq3) was formed to have a thickness of 1 〇 nm. Further, cesium carbonate (0.7 vol%) and A co-deposited film of tris[8-hydroxyquinolinic acid]aluminum (Alq3) was formed to have a thickness of 40 nm, whereby an electron injecting layer was formed from -17 to 200901818. Each layer corresponds to an organic EL layer. Then, the substrate was transported. To the sputtering chamber of the vacuum vapor deposition apparatus' and indium tin oxide (ITO) at a pressure of 0.6 Pa while the Ar gas is being introduced by sputtering (100 seem) to be formed to have a 220 nm The film of thickness, whereby the cathode 9 is formed. Further, oxygen gas (0.2 seem) and nitrogen gas (10 seem) were introduced, and the cerium (Si) target was subjected to reactive sputtering at a pressure of 0.6 Pa, whereby a transparent yttria film (Si-Ο- Ν) was formed to have a thickness of 500 nm, whereby the surface protective film 10 was formed. Thereafter, the substrate on which the film formation procedure was completed was carried to the glove box, and the glove box was sealed in a nitrogen atmosphere with a glass cover containing a desiccant. The organic light-emitting device (emitting green light) of the organic light-emitting device obtained by the above-mentioned manufacturing process was continuously lit for 100 hours with a constant current (current of 100 mA/cm 2 ), and was brightnessed. The initial brightness and the brightness after 10 hours were measured by the BM-7 manufactured by Topcon Inc. 'by this' to evaluate the change in luminescence characteristics. The luminance change L (100h) / L (ini) was 95.0% (initial luminance L (ini) = 1,300 Cd / m2), and excellent driving and life characteristics were obtained. Then, the organic light-emitting device was placed in a constant temperature and humidity chamber at a temperature of 80 t and a humidity of 80%, thereby performing a measurement of ι, hour of leaving evaluation. When the illuminating state after leaving is observed, it is found that the green light is uniformly emitted 'as in the case before leaving. (Example 2) A device substrate was fabricated in the same manner as in Example 1, except that a Cr film having a thickness of 500 nm was used as an anode, followed by cleansing and dehydration. Further, the UV ozone treatment was carried out in the same manner as in Example 1 as the treatment before the formation of the organic EL layer except that the ambient pressure was set to 100 Pa. The obtained organic light-emitting device was evaluated in the same manner as in Example 1, and it was found that L (l〇〇hVL(ini) was 94.5% (initial luminance L (ini) = 1,05 0 cd/m 2 ), And in the same manner as in Example 1, the organic light-emitting device has excellent driving and life characteristics. Further, the light-emitting state after leaving the temperature of 80 ° C and the humidity of 80% for 1 hour, and before leaving (Example 3) In the same manner as in Example 1, the organic light-emitting device was manufactured as it is using the device substrate used in Example 1, except that the pressure during the treatment before forming the organic EL layer was 10, 〇〇 〇Pa. The obtained organic light-emitting device was evaluated in the same manner as in Example 1, and it was found that L (100h) / L (ini) was 92.8% (initial brightness L (ini) = 1,290 cd /m2)' and the organic light-emitting devices have excellent driving and life characteristics, although they are slightly inferior to the driving and life characteristics of Example 1. In addition, at a temperature of 80 ° C and a humidity of 80%, 1,0 The illuminating state after 0 0 hours is the same as that before leaving. (Example 4) In the same manner as in Example 1, the substrate was fabricated as it is using the -19-200901818 substrate used in Example 1, except that the pressure during the treatment before the formation of the organic EL layer was 1 〇Pa, which was about to be introduced. The gas was oxygen having a purity of 99.9%, the introduction flow rate was 0.5 slm', and the UV-light irradiation time was 20 minutes. The obtained organic light-emitting device was evaluated in the same manner as in Example 1, and it was found that L (100h) / L (ini) is 91.6% (initial brightness L (ini) = 1, 2 10 cd / m2), and the organic light-emitting devices have driving and life characteristics without any problems in practical use, although they It is slightly inferior to the driving and life characteristics in other examples. In addition, the illuminating state after leaving the temperature at 80 °C and the humidity of 80% for 1 hour is the same as before leaving. Example 1) An organic light-emitting device was manufactured as it was in the same manner as in Example 1 using the device substrate used in Example 1, except that the pressure during the treatment before forming the organic EL layer was 101,300 Pa (atmospheric pressure) Outside The obtained organic light-emitting device was evaluated in the same manner as in Example 1, and it was found that L (100h) / L (ini) was 90.5% (initial brightness L (ini) = 1,300 cd / m2), Moreover, the driving and life characteristics of the organic light-emitting device are inferior to those of the above examples. Further, after the organic light-emitting device leaves the temperature of 80 ° C and the humidity of 80% for 1,0 0 hours, it is observed. The surrounding part of the pixel is darkened, and this is not observed before leaving. -20-200901818 (Comparative Example 2) In the same manner as in Example 1, the organic light-emitting device was manufactured as it is using the device substrate used in Example 1, except that the pressure during the process before forming the organic EL layer was 5 Pa, the gas to be introduced is oxygen having a purity of 99.9%, the introduction flow rate is 0.05 slm, and the UV-light irradiation time is 20 minutes. The obtained organic light-emitting device was evaluated in the same manner as in Example 1, and it was found that L (1 00h) / L (ini) was 1 0.5% (initial luminance L (ini) = 1, 2 〇 0 cd / M2), and the driving and life characteristics of the organic light-emitting device are poor. Further, after the organic light-emitting device was left at a temperature of 80 ° C and a humidity of 80% for 1 hour, the entire light-emitting portion was observed to be dark. (Comparative Example 3) In the same manner as in Example 1, the organic light-emitting device was manufactured as it is using the device substrate used in Example 2 except that the pressure during the treatment before the formation of the organic EL layer was 1〇1,300. Outside the Pa (atmospheric pressure), the obtained organic light-emitting device was evaluated in the same manner as in Example 1, and it was found that L (100h) / L (ini) was 89.0% (initial brightness L (ini) =1 , 300 cd/m2), and the driving and life characteristics of the organic light-emitting device are inferior to the driving and life characteristics in the above examples. Further, after the organic light-emitting device was separated from the temperature of 80 ° C and the humidity of 80% for 1,000 hours, it was observed that the peripheral portion of the pixel was darkened, which was not observed before leaving. -21 - 200901818 Table 1 Ozone treatment conditions L (100h) / L (ini) The gas to be introduced at a temperature of 100 mA / cm 2 and 80% 1,000 pressure (slm) (min) at a temperature of about 80 ° C Hours after Example 1 1,000 Dry air 10 10 95 Uniform Example 2 100 Dry air 10 10 94.5 Uniform Example 3 10,000 Dry air 10 10 92.8 Uniform Example 4 10 Oxygen 0.5 20 91.6 Uniform Comparative Example 1 101,300 Dry air 10 10 90.5 Comparison of ambient darkening Example 2 5 Oxygen 0.05 20 10.5 Whole Part Darkening Comparative Example 3 101,300 Dry Air 10 10 89.0 Ambient Darkening While the present invention has been described with reference to the representative embodiments, it will be understood that the invention is not limited Representative examples. The scope of the claims below is to be accorded the broadest scope of the invention, and all such modifications and equivalent structures and functions. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view showing a typical partial sectional structure of an organic light-emitting device according to the present invention. 2 is a schematic view of a substrate pretreatment apparatus. Fig. 3 is a view showing a manufacturing flow and a view of changes in pressure in respective processes of an organic light-emitting device according to an example of the present invention. [Description of main component symbols] 1 : Substrate 2 : Thin film transistor (TFT) -22- 200901818 3 : Interlayer insulating film 4 : Connection hole 5 : Lower electrode 6 : Device separation film 7 : Opening portion 8 : Organic EL layer ( Organic compound layer 3 1 : vacuum chamber 32 : UV-lamp 33 : substrate (device substrate) 3 4 : mass flow controller 3 5 : vacuum gauge 3 6 : pressure controller 3 7 : variable valve 9 : upper electrode (cathode) 1 〇: Protective film-23