TW200900373A - Dielectric ceramic composition - Google Patents
Dielectric ceramic composition Download PDFInfo
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- TW200900373A TW200900373A TW96122018A TW96122018A TW200900373A TW 200900373 A TW200900373 A TW 200900373A TW 96122018 A TW96122018 A TW 96122018A TW 96122018 A TW96122018 A TW 96122018A TW 200900373 A TW200900373 A TW 200900373A
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- Prior art keywords
- composition
- oxide
- dielectric ceramic
- ceramic composition
- additive
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- 239000000203 mixture Substances 0.000 title claims abstract description 74
- 239000000919 ceramic Substances 0.000 title claims abstract description 38
- 239000000654 additive Substances 0.000 claims abstract description 36
- 239000000463 material Substances 0.000 claims abstract description 33
- 230000000996 additive effect Effects 0.000 claims abstract description 32
- 239000011521 glass Substances 0.000 claims abstract description 30
- XLOMVQKBTHCTTD-UHFFFAOYSA-N zinc oxide Inorganic materials [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 18
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N titanium dioxide Inorganic materials O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 17
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical compound [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 claims abstract description 14
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims abstract description 12
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Inorganic materials [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 claims abstract description 12
- VTYYLEPIZMXCLO-UHFFFAOYSA-L Calcium carbonate Chemical compound [Ca+2].[O-]C([O-])=O VTYYLEPIZMXCLO-UHFFFAOYSA-L 0.000 claims abstract description 6
- 229910000019 calcium carbonate Inorganic materials 0.000 claims abstract description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims abstract description 6
- NLQFUUYNQFMIJW-UHFFFAOYSA-N dysprosium(III) oxide Inorganic materials O=[Dy]O[Dy]=O NLQFUUYNQFMIJW-UHFFFAOYSA-N 0.000 claims abstract description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 4
- GEYXPJBPASPPLI-UHFFFAOYSA-N manganese(III) oxide Inorganic materials O=[Mn]O[Mn]=O GEYXPJBPASPPLI-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052681 coesite Inorganic materials 0.000 claims abstract description 3
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims abstract description 3
- 229910052682 stishovite Inorganic materials 0.000 claims abstract description 3
- 229910052905 tridymite Inorganic materials 0.000 claims abstract description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 3
- 238000007254 oxidation reaction Methods 0.000 claims description 13
- 230000003647 oxidation Effects 0.000 claims description 12
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 7
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 7
- 239000005751 Copper oxide Substances 0.000 claims description 6
- 229910000431 copper oxide Inorganic materials 0.000 claims description 6
- 239000011787 zinc oxide Substances 0.000 claims description 6
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims description 5
- 229910002113 barium titanate Inorganic materials 0.000 claims description 4
- 229910052810 boron oxide Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 239000004408 titanium dioxide Substances 0.000 claims description 3
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 2
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 claims description 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 claims description 2
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 claims description 2
- AXTYOFUMVKNMLR-UHFFFAOYSA-N dioxobismuth Chemical compound O=[Bi]=O AXTYOFUMVKNMLR-UHFFFAOYSA-N 0.000 claims description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 claims 2
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- 229910052684 Cerium Inorganic materials 0.000 claims 1
- 239000002253 acid Substances 0.000 claims 1
- 229910052797 bismuth Inorganic materials 0.000 claims 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 229910052793 cadmium Inorganic materials 0.000 claims 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims 1
- 229910000029 sodium carbonate Inorganic materials 0.000 claims 1
- NEDFZELJKGZAQF-UHFFFAOYSA-J strontium;barium(2+);dicarbonate Chemical compound [Sr+2].[Ba+2].[O-]C([O-])=O.[O-]C([O-])=O NEDFZELJKGZAQF-UHFFFAOYSA-J 0.000 claims 1
- 239000010949 copper Substances 0.000 abstract description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract description 18
- 229910052802 copper Inorganic materials 0.000 abstract description 18
- 229910052751 metal Inorganic materials 0.000 abstract description 17
- 239000002184 metal Substances 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 12
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 abstract description 4
- WMWLMWRWZQELOS-UHFFFAOYSA-N bismuth(iii) oxide Chemical compound O=[Bi]O[Bi]=O WMWLMWRWZQELOS-UHFFFAOYSA-N 0.000 abstract description 3
- 229910011255 B2O3 Inorganic materials 0.000 abstract description 2
- 235000010216 calcium carbonate Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000012071 phase Substances 0.000 description 36
- 238000005245 sintering Methods 0.000 description 19
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 12
- 238000000034 method Methods 0.000 description 12
- 239000000843 powder Substances 0.000 description 12
- 239000012298 atmosphere Substances 0.000 description 9
- 238000007792 addition Methods 0.000 description 8
- 238000010344 co-firing Methods 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 7
- 238000009472 formulation Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052763 palladium Inorganic materials 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- JLVVSXFLKOJNIY-UHFFFAOYSA-N Magnesium ion Chemical compound [Mg+2] JLVVSXFLKOJNIY-UHFFFAOYSA-N 0.000 description 3
- 241000237536 Mytilus edulis Species 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 229910010293 ceramic material Inorganic materials 0.000 description 3
- 238000011161 development Methods 0.000 description 3
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- 238000001035 drying Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910001425 magnesium ion Inorganic materials 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 235000020638 mussel Nutrition 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 238000001354 calcination Methods 0.000 description 2
- 239000011575 calcium Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 239000008367 deionised water Substances 0.000 description 2
- 229910021641 deionized water Inorganic materials 0.000 description 2
- 238000009766 low-temperature sintering Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 239000008267 milk Substances 0.000 description 2
- 210000004080 milk Anatomy 0.000 description 2
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- 239000007858 starting material Substances 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 description 1
- RYHBNJHYFVUHQT-UHFFFAOYSA-N 1,4-Dioxane Chemical compound C1COCCO1 RYHBNJHYFVUHQT-UHFFFAOYSA-N 0.000 description 1
- 229910001316 Ag alloy Inorganic materials 0.000 description 1
- 241000208340 Araliaceae Species 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 206010011469 Crying Diseases 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910017682 MgTi Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229910001252 Pd alloy Inorganic materials 0.000 description 1
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- FJDQFPXHSGXQBY-UHFFFAOYSA-L caesium carbonate Chemical compound [Cs+].[Cs+].[O-]C([O-])=O FJDQFPXHSGXQBY-UHFFFAOYSA-L 0.000 description 1
- 229910000024 caesium carbonate Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
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- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 description 1
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- Inorganic Insulating Materials (AREA)
Abstract
Description
200900373 九、發明說明: 【發明所屬之技術領域】 本發明係有關於一種陶瓷材料 成物,其適用於高頻應用之溫度補償型介電^組 低溫還原氣氛燒結製程製作。 。。亚適用以 【先前技術】 積層陶瓷電容器係由陶瓷介 , |窀貝與内電極貴金屬(如鈀 (Pd)與鈀(Pd)/銀(Ag)合金)所製 孓/専呷互相堆疊而組成 旦長立方體陶兗元件’此元件擁有體積小與高密度電容容 里之特性,目前廣泛應用於密集 來化冤路板之設計需求。近 年來,隨著電子科技的快速發展,積層陶Μ容器的應用 需求亦朝向高容值、对高較電s、高頻應用等不同方向 發展。在此同時,作為内電極所用把㈣之類貴金屬價格, 皆快速且大幅飆漲,導致元件成本快速增加,亦驅使製造 業者找尋兼具低製作成本與高功能性之製程方式與材料。 在降低製造成本的前提了,開^ 了卑金屬電極(Β·-祕以 electrode)的製程,即為在還原氣氛的燒結處理下,以成本 較便宜的鎳(Ni)或銅(Cu)金屬,取代昂貴的鈀或鈀/銀合金 作為内電極。此外,於高頻通訊的應用環境下,元件特性 上更需達到較低的等效串聯電阻(ESR,Equivalent Series200900373 IX. Description of the Invention: [Technical Field] The present invention relates to a ceramic material which is suitable for use in a temperature-compensated dielectric-type low-temperature reducing atmosphere sintering process for high-frequency applications. . . Applicable to [Prior Art] Laminated ceramic capacitors are made of ceramic, | mussels and internal electrode precious metals (such as palladium (Pd) and palladium (Pd) / silver (Ag) alloys) Once long cubes and ceramics components, this component has the characteristics of small size and high density capacitance. It is widely used in the design of densely-formed circuit boards. In recent years, with the rapid development of electronic technology, the application requirements of multi-layer ceramic pot containers have also developed in the direction of high capacitance, high power and high frequency applications. At the same time, the price of precious metals such as (4) used as internal electrodes has rapidly and dramatically increased, resulting in a rapid increase in component costs, and has also driven manufacturers to find process methods and materials that combine low production costs with high functionality. On the premise of reducing the manufacturing cost, the process of sturdy metal electrode (electro-electrode) is opened, which is a cheaper nickel (Ni) or copper (Cu) metal under the sintering treatment of a reducing atmosphere. Instead of expensive palladium or palladium/silver alloys as internal electrodes. In addition, in the application environment of high-frequency communication, it is necessary to achieve lower equivalent series resistance (ESR, Equivalent Series).
Resistance)與散逸係數(Dissipation Factor)等要求,因此, 擁有優越導電特性的銅金屬’即成為具有發展潛力的電極 金屬材料。 然而’在實際製程上’由於銅金屬熔點較低(< 丨丨〇〇。匚), 5 200900373 '刀今易方;间'皿下氧化,並不適合在傳統的大氣環境下 以高溫共燒方式進行製作,同時考量到未來在高頻通訊端 的應用所需’故導入具有低溫共燒特性(<1000°c )的微波介 ,材料,以達到低溫燒結製作的要求,亦是現在陶兗 電容器發展的趨勢。在相關的國内外專利巾,符合低介電 係數(K~B2G)與高品質因子(Q值>1_)的m料,最廣: W的疋;MgTi〇3材料,然而,由於鎂離子(Mg2+)容易於溶 Μ中解離,造成積層陶£電容器(ML(:c)在㈣薄帶製程令 流變性質異常’而且當游離的鎮離子數量增加時,則需要 加入更多的分散劑予以分散,亦導致陶瓷薄帶的堆積密度 下降進而這成燒結後元件内部的缺陷數量增加,影響其 電性。而在美國第43944565號專利中,其成份配方所含 之稀土3元素,如氧化斂(_2〇7)等,在MLCC製作上,蝕離 子(Nd )亦有類似上述鎂離子的解離情形,當其添加量增 加時,燒結後元件的q值與共振頻率溫度係數,亦會明 下降。 S ” 在早期微波介電材料研究中,Mg_Zn_Ti組成之陶瓷氧 化物’可於較低溫(約u〇〇t;)條件下燒結製成(美國第 4533974號專利和中華民國第1236462號專利),亦有研究 者欲嘗試利㈣點較低的玻璃相組成,㈣與Ag内電極 共燒的條件,但所製得之材料燒結性與電性皆明顯下滑^美 國第6309995號專利)。此外,MgTi〇3_CaTi〇3亦為具有低 介電損失及低共振頻率溫度係數的材料系統(中華民國公告 第00245806號專利),經等價元素取代,即以^取代 6 200900373Resistance and Dissipation Factor are required. Therefore, copper metal with superior electrical conductivity is an electrode metal material with potential for development. However, 'in actual process', due to the low melting point of copper metal (< 丨丨〇〇.匚), 5 200900373 'Knife-to-the-square; oxidized under the dish, is not suitable for co-firing at high temperatures in the traditional atmospheric environment. The method is to be produced, and the application of the high-frequency communication terminal is considered in the future. Therefore, the introduction of microwave dielectric materials with low-temperature co-firing characteristics (<1000 °c) to meet the requirements of low-temperature sintering production is also the current The trend of capacitor development. In related domestic and foreign patented towels, it meets the low dielectric constant (K~B2G) and high quality factor (Q value >1_) of the m material, the most widely: W 疋; MgTi 〇 3 material, however, due to magnesium ion (Mg2+) is easily dissociated in the solution, resulting in a multilayer capacitor (ML(:c) is abnormal in the rheological properties of the (4) ribbon process and when more free town ions are added, more dispersant needs to be added. Dispersion also causes the bulk density of the ceramic ribbon to decrease, which in turn increases the number of defects inside the sintered component, affecting its electrical properties. In US Pat. No. 43,944565, the composition of the rare earth element contained in the composition, such as oxidation Convergence (_2〇7), etc., in the production of MLCC, the etched ions (Nd) also have similar dissociation conditions with the above-mentioned magnesium ions. When the addition amount is increased, the q value of the sintered component and the temperature coefficient of the resonance frequency will also be apparent. In the early research of microwave dielectric materials, the ceramic oxide composed of Mg_Zn_Ti can be sintered at a lower temperature (about US 4, 453, 974 and the Republic of China No. 12,364,462). ), there are also researchers who want Try to make the lower (four) point of the glass phase composition, (4) the condition of co-firing with the Ag internal electrode, but the sinterability and electrical properties of the obtained material are obviously reduced. ^ US Pat. No. 6,309,995.) In addition, MgTi〇3_CaTi〇3 It is also a material system with low dielectric loss and low resonance frequency temperature coefficient (Republic of China Announcement No. 00245806), replaced by an equivalent element, that is, replaced by ^ 6 200900373
Zr取代T"所改良得到xSrZr(V(卜x)CaTi〇3組成,經由 適當的玻璃配方添加,可由原本丨3〇(rc的燒結溫度,大幅 降低至l〇〇(TC以下,即可適用於低溫共燒製作,此相關研 究如美國第63353 10號專利内容所示。Zr replaces T" to obtain the composition of xSrZr (V(Bu x)CaTi〇3, which can be added by a suitable glass formula, which can be reduced from the original 丨3〇 (the sintering temperature of rc is greatly reduced to 1 〇〇 (TC below). It is produced by co-firing at a low temperature, and the related research is shown in the content of U.S. Patent No. 63,353,10.
於美國第5599757號專利中所述,其是以較低成本的 微波介電材料BaTi4〇9為主相成分,配合適當的玻璃添加 刈,可達到低於1100°c的燒結溫度且具優越的微波介電 性,但仍無法與銀或銅進行共燒,在配方中所添加之鉛, 亦有影響其電性之虞。日本帛2000_281442號專利則是利 用BaTi4〇9作為主要成分,加入取代Ti元素成分之等價元 ,丁、釔(Zr) ’ 亚以 Zn〇、n、Li2C〇3、Ca〇 與 si〇2 為組成 之玻璃相,成功的降低陶瓷的燒結溫度至93〇它,然而其 玻离相配方争所添加之鐘元素,在玻璃結構中易產生離子 導電’影響陶瓷的絕緣特性。 盥2美國第6949487號專利,則進一步探討玻璃相組成 ”改貝劑配方,並得到兼顧低溫燒結與介電性質之以丁丨〇 陶瓷··玻璃複合配方。 、 49 由於Ba〇_Ti〇2系列具有低成本特性,也有於BaTi〇3 組成中再添加Nb2〇5 ’進而得到具較佳品質因子的 Baf4Nb4〇2,(Q值約_,κ值約55)(如美國第⑽州 ^ :所不)與為〇2s(Q值約侧,κ值約41)(如 ^國弟63 16376號專利所示)之高溫微波介電相 Π配方添加可有效降低燒結溫度…保有其高頻Si …。國内亦有相關專利發表,如中華民國申請第 7 200900373 2005 02993號專利與中華民國第I227558〇號專利;此外, BaTi03-CaZr03組成(中華民國公告第〇〇57786〇號專利)、 BaO-T]〇2-Bi2〇3-Ln2〇3(Ln為La或Nd)组成(中華民國公告 第00234766號專利)與(ca-Sr-Nd-Cd)Ti03材料組成(中華 民國公告第00426864號專利),皆有專利發表,但以BaTi〇3 為主相的材料雖有較佳的介電特性,但高頻下的介電損失 較大,且燒結溫度偏高(1100〜115〇°c)。 在其他的低溫微波材料配方開發上,如Ca〇_Zr〇2系(如 曰本第H09-3 15 859號專利所述)、Bi2〇3_Ca〇_Nb2〇5系(如 美國弟5350639號專利、日本第Hll-34231號專利所)與As described in U.S. Patent No. 5,599,757, it is based on a relatively low cost microwave dielectric material BaTi4〇9 as a main phase component, and with suitable glass addition yttrium, it can achieve a sintering temperature of less than 1100 ° C and is superior. Microwave dielectric properties, but still not co-fired with silver or copper, the lead added in the formulation also affects its electrical properties. Japanese 帛2000_281442 patent uses BaTi4〇9 as the main component, adding the equivalent element of the substituted Ti element component, D, 钇(Zr) 'sub, Zn〇, n, Li2C〇3, Ca〇 and si〇2 The composition of the glass phase successfully reduced the sintering temperature of the ceramic to 93 〇, however, its glass phase separation formula contends that the added clock element, which is prone to ion conduction in the glass structure, affects the insulating properties of the ceramic.盥 2 US Patent No. 6,949,487, further explores the glass phase composition of the modified shelling agent formulation, and obtains the composite formulation of Dingshao ceramic··glass with both low-temperature sintering and dielectric properties. 49 Because of Ba〇_Ti〇2 The series has low-cost characteristics, and also adds Nb2〇5' to the BaTi〇3 composition to obtain Baf4Nb4〇2 with better quality factor (Q value about _, κ value about 55) (such as US (10) state ^: No) and high temperature microwave dielectric phase enthalpy formula for 〇2s (Q value about side, κ value about 41) (as shown in the patent of Guodi 63 16376) can effectively reduce the sintering temperature... retain its high frequency Si .... There are also related patents published in China, such as the Republic of China application No. 7 200900373 2005 02993 patent and the Republic of China No. I227558 ; patent; in addition, BaTi03-CaZr03 composition (Republic of China Announcement No. 57786 专利 patent), BaO -T]〇2-Bi2〇3-Ln2〇3 (Ln is La or Nd) composition (Republic of China Announcement No. 00234766) and (ca-Sr-Nd-Cd) Ti03 material composition (Republic of China Bulletin No. 00426864) Patent), all patents are published, but the materials with BaTi〇3 as the main phase are more Dielectric properties, but the dielectric loss at high frequencies is large, and the sintering temperature is high (1100~115〇°c). In other low-temperature microwave material formulation development, such as Ca〇_Zr〇2 system (such as U.S. Patent No. H09-3 15 859), Bi2〇3_Ca〇_Nb2〇5 series (such as the patent of U.S. Patent No. 5,350,639 and Japanese Patent No. H11-34231)
LaNb〇4系(如美國第6620750號專利所述)等,皆強調其配 方符合低溫下燒結製程特性,並擁有高品質因子。另值得 一提的是,在美國第5350639號專利内容中提及,其陶瓷 配方經由適當的添加後(Cu0、VA5),可改善低氧分壓下 燒結對陶瓷所造成的介電損失,可與銅金屬(Cu)於還原氣 氛下共燒製作。而最早導入銅卑金屬共燒製作之專利,則 是曰本第H05-1 82524號專利,其以Tl〇2_Zr〇2_Sn〇2為主 材料配方,雖未得到理想的Q值,但配合適當的玻璃添加 劑,可與銅進行共燒製作。 由上述相關專利文獻中得知,大部分的微波介電材料 所共燒之金屬,皆以低氧化性的銀(Ag)金屬為主,僅有少 數專利提及與銅(Cu)金屬共燒之製作成果。然而,其陶竟 材料在還原氣氛下(NO與銅金屬共燒後,可能因材料中氧 空缺增加,產生局部半導化,反而降低了陶瓷本體原有的 8 200900373 微波介電特性。 【發明内容】 有鑑於現有介電陶莞材料具有製造成本高 電特性不佳等問題,本發明之目的在於提供二 、 /、可以適用於高頻應用之溫度補償型電容哭,益 適用以低溫還原氣氛燒結製程製作,而可降低製造成。本。 .為達成以上的目的,本發明之介電陶瓷組成物係包 · 一主體相,係由鈦酸鋇基(BaO-Ti〇2)所組成; 玻璃相添加物,係選自於由氧化硼(BA。、氧化鋅 ㈤0)、二氧切(Si〇2)、氧化锅(Ba〇)、氧化叙(Al2〇3)與 氧化叙(Βι2〇3)所構成材料君♦組中之至少一種材料;以及 一 一改質添加物,其係選自於由二氧化鍺(Ge02)、三氧 化鏑(Dy2〇3)、二氧化二錳(Mn2〇3)、碳酸鋇(BaC〇3)、碳 S夂赶(CaCQ3)與氧化銅(CuC))所構成材料群組中之至少一種 材料。 較佳的是,主體相如0與丁1〇2的莫耳數比介於3_75〜46 間。 較佳的是’主體相佔整體組成物的88〜9祕。 較佳的是’玻璃相添加物佔整體組成物的Μ〜卿%。 較佳的是,玻璃相添加物包括〇.(H〜2.5wt%氧化石朋、 0.3〜5.5wt〇/〇氧化鋅、〇 2〜2 2wt/〇_乳化矽、14〜55wt%氧化 鎖、0.01〜〇.5wt%氧化鋁盥〇〇1 ^ ” υ·ϋ1〜〇,2wt%氣化鉍,以上比例 係為各材料佔整體組成物之重量百分比。 9 200900373 較佳的是,改拼、、兵1 上 貝,小加物佔整體組成物的0.01〜2wt%。 較佳的是,改所;丄 貝4加物包括〇·〇 1〜〇 ·5wt0/氧化' 0.01 〜0.5wt% 三 g 儿 ^ ^ 二鏑、0_01〜lwt%三氧化二錳、 0.01〜1.5'^%碳酿相 '、、〇·〇1〜lwt%碳酸鈣與〇.〇〗〜〗%氧 銅,以上比例係Q氧化 為各材料佔整體組成物之重量百分比。 由於本發明之介帝 1毛陶兗組成物,同時具有可與銅金屬 共燒、低介電損奂偽& & ^ ^ - ϋ- ^ F#! ^ 電谷/溫度係數的特性,可廣泛應用 於低溫共燒陶瓷 ^ v 〇w Temperature Co-fired Ceramic > LTCC)The LaNb〇4 series (as described in U.S. Patent No. 6,620,750) emphasizes that its formulation conforms to the sintering process characteristics at low temperatures and has a high quality factor. It is also worth mentioning that, as mentioned in the U.S. Patent No. 5,350,639, the ceramic formulation can improve the dielectric loss caused by sintering under low oxygen partial pressure after appropriate addition (Cu0, VA5). Co-fired with copper metal (Cu) under a reducing atmosphere. The earliest patent for the production of copper-baked metal co-firing is the patent of H05-1 82524, which is based on Tl〇2_Zr〇2_Sn〇2. Although it does not get the ideal Q value, it is suitable. A glass additive that can be co-fired with copper. It is known from the above related patent documents that most of the metals co-fired by microwave dielectric materials are mainly low-oxidation silver (Ag) metals, and only a few patents mention co-firing with copper (Cu) metals. Production results. However, the ceramic material in the reducing atmosphere (NO and copper metal co-firing may increase the oxygen vacancy in the material, resulting in local semi-conductivity, but reduce the original dielectric properties of the ceramic body 8 200900373. In view of the problems of the conventional dielectric ceramic materials having high manufacturing cost and high electrical characteristics, the object of the present invention is to provide a temperature-compensated capacitor crying which can be applied to high-frequency applications, and is suitable for low-temperature reducing atmosphere. In the sintering process, the manufacturing process can be reduced. In order to achieve the above object, the dielectric ceramic composition of the present invention is a main phase composed of barium titanate (BaO-Ti〇2); The glass phase additive is selected from the group consisting of boron oxide (BA., zinc oxide (5) 0), dioxo (Si〇2), oxidized pot (Ba〇), oxidized (Al2〇3) and oxidized (Βι2〇). 3) at least one material of the constituent materials; and a modified additive selected from the group consisting of cerium oxide (Ge02), antimony trioxide (Dy2〇3), and dimanganese dioxide (Mn2) 〇3), barium carbonate (BaC〇3), carbon S夂 catch (Ca At least one of a group of materials composed of CQ3) and copper oxide (CuC). Preferably, the molar ratio of the main phase such as 0 to D1 is between 3 and 75 to 46. Preferably, the body phase accounts for 88 to 9 secrets of the overall composition. Preferably, the glass phase additive comprises Μ% to % of the overall composition. Preferably, the glass phase additive comprises 〇. (H~2.5wt% oxidized stone, 0.3~5.5wt 〇/〇 zinc oxide, 〇2~2 2wt/〇_emulsified 矽, 14~55wt% oxidized lock, 0.01~〇.5wt% alumina 盥〇〇1 ^ υ ϋ·ϋ1~〇, 2wt% gasification 铋, the above ratio is the weight percentage of each material as a whole composition. 9 200900373 Preferably, change,兵1上上, the small additive accounts for 0.01~2wt% of the whole composition. Preferably, the change; the mussel 4 addition includes 〇·〇1~〇·5wt0/oxidation '0.01~0.5wt% three g 儿 ^ ^ 二镝, 0_01~lwt% dimanganese oxide, 0.01~1.5'^% carbon brewing phase', 〇·〇1~lwt% calcium carbonate and 〇.〇〗 〖% oxygen copper, the above ratio The oxidation of Q is the weight percentage of each material as a whole composition. Due to the composition of the dynasty 1 Maotao enamel of the present invention, it can also co-fire with copper metal, low dielectric damage pseudo && ^ ^ - ϋ - ^ F#! ^ Characteristics of electric valley / temperature coefficient, can be widely used in low temperature co-fired ceramics ^ v 〇w Temperature Co-fired Ceramic > LTCC)
製程或積層陶竟雷交D ^ ^ ^ (Multi-layer Ceramic Capacitor -Process or laminating ceramics D ^ ^ ^ (Multi-layer Ceramic Capacitor -
MLCC)之製作,祐w扣μ P 並了顯者降低製造成本。 【實施方式】 本發明之陶穿公+ ,, 八一 1兒材料組成組成物的較佳實施例係包 3 妝目 玻璃相添加物與一改質添加物;其中, 主體相係由鈦酸鋇基(Ba〇_Ti〇2)所組成;於本較佳實 施例中,主體相佔螫鲈知l 、 正組成物的88〜97wt°/。(重量百分比),The production of MLCC), w μ μ μ P and significantly reduce manufacturing costs. [Embodiment] The preferred embodiment of the material composition of the ceramics of the present invention is a package of 3 glassy phase additives and a modified additive; wherein the main phase is made of titanic acid The composition of the sulfhydryl group (Ba〇_Ti〇2); in the preferred embodiment, the bulk phase accounts for 88~97wt°/ of the positive composition. (% by weight),
Ba〇與Tl〇2的莫耳數比介於1:3.75〜1:4.6間; — 係遥自於由氧化硼(B2〇3)、氧化鋅 n、一乳化石夕(Sl〇2)、氧化鋇(Ba〇)、氧化叙(ai2〇3)盘 氧㈣⑼2〇3)所構成材料群組中之至少—種材料·,於本較 佳貝鈀例巾,玻璃相添加物佔整體組成物的2·9〜i〇wt%, 其可包括〇.(M〜2.5wt%氧化碼、Q 3〜5 5wt% ^ ^ 0.2〜2wt%二氧切、14〜5 5_%氧化鋇、g qi〜g墙氧化 紹與〇.01〜〇该氧化錢,以上比例係為各材料伯整體,且 成物之重量百分比; 、 10 200900373 改質添加物係選自於由二氧化錯(Ge〇2)、i氧化二鋼 (Dy2〇3)、三氧化二猛(Mn2〇3)、碳酸鎖(BaC〇3)、碳酸飼 (CaC〇3)與氧化銅(Cu〇)所構成材料群組中之至少一種材 料’於本較佳實施例中’改質添加物佔整體組成物的 0.01 2wt/〇,較佳的是包括〇 〇i〜〇 5wt%二氧化鍺、 0.01〜0.5wt%二氧化二鏑、〇 〇1〜lwt%三氧化二猛、"卜1 $ wt%碳酸鋇、0.01〜lwt%碳酸辑與〇 〇i〜iwt%氧化銅,以上 比例係為各材料佔整體組成物之重量百分比。 實施例一:主體相粉末的製備過程The molar ratio of Ba〇 to Tl〇2 is between 1:3.75 and 1:4.6; — is distant from boron oxide (B2〇3), zinc oxide n, and one emulsified stone (Sl〇2). At least one of the materials in the group consisting of yttrium oxide (Ba〇), oxidized yttrium (ai2〇3), disk oxygen (4), (9), 2〇3), in the preferred palladium case, the glass phase additive occupies the overall composition 2·9~i〇wt%, which may include 〇. (M~2.5wt% oxidation code, Q 3~5 5wt% ^ ^ 0.2~2wt% dioxane, 14~5 5_% yttrium oxide, g qi ~g wall oxidation Shao and 〇.01~〇 the oxidation money, the above ratio is the whole material of the material, and the weight percentage of the product; 10, 200900373 The modified additive is selected from the second oxidation (Ge〇2 ), i-oxidized steel (Dy2〇3), bismuth trioxide (Mn2〇3), carbonated lock (BaC〇3), carbonated feed (CaC〇3) and copper oxide (Cu〇) At least one material 'in the preferred embodiment' is a modified additive comprising 0.01 2 wt/〇 of the total composition, preferably 〇〇i~〇5 wt% ceria, 0.01~0.5 wt% dioxide. Two 镝, 〇〇 1 ~ lwt% three oxidation, fierce, " Bu 1 $ Wt% cesium carbonate, 0.01~1wt% carbonate and 〇i~iwt% copper oxide, the above ratio is the weight percentage of each material as a whole composition. Example 1: Preparation process of bulk phase powder
主體相粉末之製備係將氧化鋇(Ba〇)之起始物碳酸鋇 (BaC〇3)及二氧化鈦(Ti〇2),依Ba〇與η%之莫耳數比介 於1:3.75〜1:4.6間之範圍稱重後,置人聚氯乙烯材質之球 磨罐中,並加入去離子水與釔增韌氧化錘 Toughened ZirConia,YTZ)磨球,進行球磨混合2〇小時, 混合完成後於80t烘箱中乾燥;之後,將烘乾後之主體相 以5°C/miri的升溫速率加熱至12〇〇〇c,於大氣環境下進行 煆燒(Calcinatl〇n)處理,並持溫5小時;煆燒完成後,將煆 燒後之主體相、YTZ磨球與酒精溶劑於球磨罐中進行 小時研磨製作,以得到平均粒徑小於1μη1(微米)之主體相 粉末。 貫施例二.玻璃相添加物粉末的製備過程 玻璃相添加物的製備係將三氧化二硼(Be3)、氧化鋅 11 200900373 (μ)、二氧化石夕(Sl〇2)、氧化韻叫〇)'三氧化二铭⑷办) /、氧化鉍(b]2〇3) ’依τ列表一之重量比例關係,稱重後置 入聚氣乙稀材質之球磨罐中’並加入去離子水肖Υτζ磨 =·’進行球磨混合20小時,混合完成後力阶烘箱中乾 木敲之後’將棋乾後玻璃相添加物以5°C/min的升溫速率 接著Ϊ力:㈣’亚持溫5分鐘進行熔化(心㈣處理, =tt冷卻。在乾燥後,將破璃相添加物、 谷劑於球磨罐中進行24小時研磨製作, 于彳粒役均勻之玻璃相添加物粉末。The main phase powder is prepared by using barium carbonate (BaC〇3) and titanium dioxide (Ti〇2) as the starting material of barium oxide (Ba〇), and the molar ratio of Ba〇 to η% is 1:3.75~1. After weighing in the range of 4.6, place it in a ball milled jar made of polyvinyl chloride, add deionized water and Toughened ZirConia, YTZ) and grind the ball for 2 hours. After mixing, Drying in an 80t oven; after that, the dried main body phase is heated to 12 ° C at a heating rate of 5 ° C / miri, and calcined at atmospheric conditions (Calcinatl〇n), and held for 5 hours. After the calcination is completed, the main phase, the YTZ grinding ball and the alcohol solvent after calcination are ground in an ball mill for a small hour to obtain a bulk phase powder having an average particle diameter of less than 1 μη (micrometer). Example 2: Preparation of glass phase additive powder The preparation of glass phase additive is made of boron trioxide (Be3), zinc oxide 11 200900373 (μ), dioxide dioxide (Sl〇2), oxidation rhyme 〇) 'San Oxide II (4) Office) /, yttrium oxide (b) 2 〇 3) 'According to the weight ratio of τ list one, weighed and placed in the ball mill tank of the gas-rich ethylene material' and added deionized Water Shaw ζ ζ = = · 'Double ball mixing for 20 hours, after the completion of the mixing, after the dry wood knock in the force step oven, 'the glass phase additive after the chess is dried at a heating rate of 5 ° C / min followed by force: (4) 'Asian Melting was carried out for 5 minutes (heart (four) treatment, = tt cooling. After drying, the glassy phase additive and the granules were ground in a ball mill for 24 hours, and the glass phase additive powder was uniformly granulated.
表一 單位:%) B, 广例三:介電陶瓷組成物的製備過程 完成主體相粉末與玻璃相添加 體相粉末與破璃相添加物粉末,進—I備後’再將主 混合。改曹、天4 P 與改貝添加物進行 文貝添加物係將二氧化鍺 七 '7 (Dy2〇3)、三氧化_饪r 2)、二氧化二録 (CaC〇3)與氧化 义鋇(BaC〇3)、碳酸 、礼化銅(CU〇),依下列表二 、 之重比例關係混仓 12 200900373 而成。 表二、,質添加物的组重量百分 组成 A B C D GeO? 38.5 : Dy)CK 23 23 75 Μη,Ο, 77 38.5 25 1 1 BaCO, CaCO, • _ -------- ------ CuO . 一 5 6 E 33 11 56Table 1 Unit: %) B, Wide Example 3: Preparation process of dielectric ceramic composition The main phase powder and the glass phase are added. The bulk powder and the glass-filled additive powder are mixed, and then the main mixture is mixed. Change Cao, Tian 4 P and modified shellfish additions to the Wenbei additive system, bismuth dioxide 7'7 (Dy2〇3), trioxide _ cooking r 2), dioxide dioxide (CaC〇3) and oxidative meaning钡(BaC〇3), carbonic acid, ritual copper (CU〇), according to the second table, the proportion of the relationship between the mixed warehouse 12 200900373. Table 2, Group weight percent composition of the mass additive ABCD GeO? 38.5 : Dy) CK 23 23 75 Μη, Ο, 77 38.5 25 1 1 BaCO, CaCO, • _ -------- --- --- CuO . A 5 6 E 33 11 56
F 比(單位:%)F ratio (unit: %)
G Η -1L ^27_ 56 100 21 21 7 7 72 72- 主體相、玻璃相添加物與改質添加物的混合比例關係 如下列表三所示。將各組忐八斤和+ , 成刀依配方比例稱重後置入球磨 罐中,並加入ΥΤΖ磨球與酒精溶劑,於球磨罐 小時研磨製作後供乾’進而得到介電陶究組成物粉末。 添力口物G Η -1L ^27_ 56 100 21 21 7 7 72 72- The mixing ratio of the bulk phase, the glass phase additive and the modifier is shown in Table 3 below. Each group of 忐8 kg and +, Chengdaoyi formula is weighed and placed in a ball mill jar, and added to the honing ball and the alcohol solvent, and then ground and dried in a ball mill tank for further drying to obtain a dielectric ceramic composition. powder. Add force
ν 配方 主體相組成 序號 — BaO與 Ti02 莫耳數 比 wt% 1 1:3.75 89.6 __2 1:4.5 89.6 3 --- 1:4 89.6 1:4 88.7 13 200900373 5 1:4 88.7 B 1.3 A, 10 6 1:4 95.6 C 0.4 A, 4 7 1:4 91.25 G 1.25 C, 7 5 8 1:4 91.6 D 0.9 B, 7 5 9 1:4 91.6 E 0.9 B, 7 5 10 1:4 90.7 F 1.8 B, 7 5 11 1:4 91.1 Η 1.4 B, 7 5 12 1:4 91.1 I 1.4 B, 7.5 將上述配方所得之介電陶瓷組成物粉末,加入微量的 聚乙烯醇(Polyviny] Alcohol)黏結劑進行造粒 (Pelletizatlon),粉末過篩後以單軸成型機於9〇〇psi的單軸 壓力,將粉末壓片成厚5 mm,直徑20mm的生述試片;隨 後,並於試片兩側分別利用網印(Screen printing)方式塗上 銅金屬膏(Copper paste),並進行與銅金屬共燒(c〇_firing) 處理;在共燒處理上,先將塗上銅金屬膏之介電陶瓷組成 物試片,於60(TC之高純氮氣(99.999% NO環境下持溫4小 4進行脫脂反應;隨後,再進一步升溫至9〇〇〜95〇它之純 虱虱或氮/氫混合氣氛(氫氣佔混合氣體之體積比例為 〇〜1 .5%間)環境下,進行持溫2小時之燒結反應。介電陶瓷 組成物與銅金屬於還原氣氛下共燒結後,測量其燒結體密 度與共燒材料的介電常數、散逸係數及介電常數溫度係 數並利用共振腔測量法(Cavity method)配合網路分析儀 (Agilent 8722ES),測量燒結體在高頻(4GHz)條件 〜OD質因 14 200900373 子(Q)。該介電常數溫度係數以卞列公式計算。 溫度係數(ppmrc) : KCi25_C25)/C25]*[l/(125-25)]*l〇6 相關測量結果如下列表四所示0 表四、陶瓷介電材組合物與銅金屬共燒結後之燒結體 電特性ν Formula body phase composition number - BaO and Ti02 Molar ratio wt% 1 1:3.75 89.6 __2 1:4.5 89.6 3 --- 1:4 89.6 1:4 88.7 13 200900373 5 1:4 88.7 B 1.3 A, 10 6 1:4 95.6 C 0.4 A, 4 7 1:4 91.25 G 1.25 C, 7 5 8 1:4 91.6 D 0.9 B, 7 5 9 1:4 91.6 E 0.9 B, 7 5 10 1:4 90.7 F 1.8 B, 7 5 11 1:4 91.1 Η 1.4 B, 7 5 12 1:4 91.1 I 1.4 B, 7.5 Add the powder of the dielectric ceramic composition obtained in the above formula to a trace amount of polyvinyl alcohol (Polyviny) Alcohol) Granulation (Pelletizatlon), the powder was sieved, and the powder was tableted into a 5 mm thick, 20 mm diameter test piece by a uniaxial molding machine at a uniaxial pressure of 9 psi; subsequently, the test piece was The side is coated with a copper paste (Copper Paste) and co-fired with copper metal (c〇_firing). On the co-firing treatment, the copper metal paste is applied first. The test piece of the electric ceramic composition is subjected to degreasing reaction at 60 (TC high purity nitrogen gas (99.999% NO environment with a temperature of 4 small 4; subsequently, further heating to 9 〇〇 to 95 〇 its pure hydrazine or nitrogen / hydrogen The mixed atmosphere (hydrogen in the volume ratio of the mixed gas is between 〇1 and 1.5%) is subjected to a sintering reaction for 2 hours. The dielectric ceramic composition and the copper metal are co-sintered in a reducing atmosphere, and the sintering is measured. The bulk density and the dielectric constant, the dissipation coefficient, and the dielectric constant temperature coefficient of the co-fired material were measured by a Cavity method in conjunction with a network analyzer (Agilent 8722ES) to measure the sintered body at high frequency (4 GHz). OD quality factor 14 200900373 sub (Q). The temperature coefficient of the dielectric constant is calculated by the formula. Temperature coefficient (ppmrc): KCi25_C25)/C25]*[l/(125-25)]*l〇6 Related measurement results Table 4 below is shown in Table 4. Table 4: Electrical properties of sintered body after co-sintering of ceramic dielectric composition and copper metal
品質 因子 氺4Quality factor 氺4
1065 1202 <1000 <1000 1200 1 168 1006 1186 1014 1137 2102 1531 1271 15 200900373 14 10 15 11 16 12 945 0 — 33.3 2.7* 1 0'4 4.21 32.7 1412 0 — 35.1 2.1*1 Ο'4 4.37 31.5 1496 0 ----- 35 3.1*1〇-4 4.39 29.5 1135 、w此甘軋瓶 < 篮積比例。 *2·其係在共振頻率為1MHz下所測得。 *3·其係在溫度25它~125它下所測得。 其係在共振頻率為4GHz下所測得。 樣°〇 5之測武結果顯示,當主體相BaO盥Ti〇之 莫耳數比約為i.4日士 π „ 4 ’經過逛原氣氛下的燒結處理之後, 少一肢的在度為4.27g/cm3,介電常數為32 4,低頻條件下 量測到之散逸係數為4χ iQ 4,⑵。c時其溫度係數 為 27·5ρρχη/°〇,其相 7欠 μ …員條件下(4GHz)所量測之Q值為12〇〇。 在相同的燒結溫度下,苗 莫耳數比約為1:3.75時(樣品υ, 少兀'、,口肢之散逸係數則奢古 文貝JU(4.3*10-4);而莫耳數比約為1:4.5 T(樣m 2)’燒結體材料密度較低4 3 常 增加至34.6。 1一 "包书數 ^及下(I乳佔混合氣體總體積0.2〜0_6% 門呀)燒結%,莫耳數比為4 配方(樣口口 6與7)較莫耳數 比為4.5(樣品3與4) ”吳丹数 )配方明顯具有抗還原反應性。 改質添加物的研究中 對強、萝语… 九中了侍知Ge、Mn與Dy的添加, ^原氣氣下燒結之燒社許 其介電特性,士矣.、 几逷原性有幫助,亦提升 将性如表四中樣品8盥9之I媸私-Ca的、、*丄 之數據所不0 Cu、Ba盥 、加,則有助於提升材料雨 ^ 表四中桟σ ϊ 7 电特性與溫度係數,如 r僳叫12、13與]4 数摞所不。但過添加量過多時 16 200900373 白勺’士 ϋ Cu 、、\丄 窃 J、口星大於1 wt%與Ca添加量大於1 wt〇/ 士,比 =於材料的高頻介電特性,如表四中樣品數據丨二二 离:目添加物的測試結果中’可得知玻璃相添加量在 梦、Wt/°時’材料的燒結密度與介電特性,皆备A到髟 響而降低,石生丄 白《文到衫 ㈠^ 表四中樣品1〇數據所示,其材料燒結不足, 又下降(4.16g/em3),介電常數亦下降至3G.5。在玻 Γ 中::Γ:(Βι) ’有利於降低玻璃相配方製作時的熔 =^、可提升燒結過程中之液相燒結的效果,如表四 中樣品1 1數據所示。 产I二上述’本案所開發之陶莞成分組成,可在燒結溫 度小於95〇°c及请语名太丁 譬产^ C原乳乱下’如高純氮氣或氮/氫混合氣氛 :兄、、銅金屬進行共燒結製作且不致於半導體化,可降 逸二?1成本,並具有低溫度係數(<±3〇ppm/t)、低散 數)1=振頻率為1MHz時’具有小於4管的散逸係 的〇、Γ貝因子(於共振頻率為4GHz時,具有高於囊 ^貝)’介電常數為30〜40間’形成可提升刪 陶免電容器(ΝΡΟ-type ΜΙΧ(:)Φ$ M w 、曰 陶竞組成物。 败)“特性之溫度補償型介電 ,上所述者僅為本發明之較佳實施態樣,非用以 日^本=明實施之範圍,大凡依本發明申請專利範圍及發 :明曰内谷所揭示之技術思想而為之簡單的等效變化虚 皆應仍屬本發明專利涵蓋之範圍内,如㈣的起妒 可為 BaC〇3’BaC2〇4、Ba(C2H5CO)H〇3 的起始物 \1 200900373 可為h3bo3或b2o3等。 【圖式簡單說明】 0'> 【主要元件符號說明1065 1202 <1000 <1000 1200 1 168 1006 1186 1014 1137 2102 1531 1271 15 200900373 14 10 15 11 16 12 945 0 — 33.3 2.7* 1 0'4 4.21 32.7 1412 0 — 35.1 2.1*1 Ο'4 4.37 31.5 1496 0 ----- 35 3.1*1〇-4 4.39 29.5 1135, w this ginseng bottle < basket ratio. *2· It is measured at a resonance frequency of 1 MHz. *3· It is measured at a temperature of 25 to ~125. It was measured at a resonance frequency of 4 GHz. The results of the measurement of the sample °〇5 show that when the molar ratio of the main phase BaO盥Ti〇 is about i.4 士 π „ 4 ' after the sintering process under the original atmosphere, the degree of one limb is 4.27g/cm3, the dielectric constant is 32 4, and the dispersion coefficient measured under low frequency condition is 4χ iQ 4, (2). The temperature coefficient is 27.5ρρχη/°〇, and the phase 7 is under the condition of μ The Q value measured by (4 GHz) is 12 〇〇. At the same sintering temperature, the Müller number ratio is about 1:3.75 (sample υ, less 兀', and the dissipation coefficient of the limbs is extravagant. JU (4.3*10-4); and the molar ratio is about 1:4.5 T (sample m 2)' The density of the sintered body material is 4 3 and often increases to 34.6. 1 "Number of books ^ and below ( I milk accounts for 0.2~0_6% of the total volume of the mixed gas. The percentage of the molar ratio is 4, the molar ratio is 4 (the mouth 6 and 7) is 4.5 (molar 3 and 4). The formulation is clearly resistant to reduction. In the study of the modified additives, the strong, the Luo language... The addition of the Ge, Mn and Dy in the Jiuzhong, ^ the dielectric properties of the sintering under the original gas, Xu Shi., several primitives are helpful, It also enhances the nature of the sample as shown in Table 4, which is the result of the data of the 盥 ϊ ϊ 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表 表Electrical characteristics and temperature coefficients, such as r 僳 12, 13 and 4, are not. However, when the amount of addition is too much, 16 200900373 'Gentry, Cu, plagiar J, mouth star greater than 1 wt% and Ca addition amount greater than 1 wt〇 / 士, ratio = high frequency dielectric properties of the material, such as The sample data in Table 4 is two-two-off: in the test results of the target additive, it can be seen that the amount of glass phase added in the dream, Wt/°, the sintered density and dielectric properties of the material are all reduced to A. , Shi Shengqi white "Wen to shirt (a) ^ Table 4 in the sample 1 〇 data, the material is insufficiently sintered, and decreased (4.16g / em3), the dielectric constant also dropped to 3G.5. In the glass::Γ:(Βι) ′ is beneficial to reduce the melting of the glass phase formulation, which can improve the effect of liquid phase sintering during sintering, as shown in the data of sample 1 in Table 4. Production I II above the composition of the pottery pottery developed in this case, can be at a sintering temperature of less than 95 ° ° C and please name Tai Ding 譬 ^ C original milk chaos 'such as high purity nitrogen or nitrogen / hydrogen mixed atmosphere: brother , copper metal is co-sintered and not semiconductorized, can reduce the cost of two?1, and has a low temperature coefficient (<±3〇ppm/t), low dispersion) 1=vibration frequency is 1MHz' The 〇 and mussel factors with a dissipative system of less than 4 tubes (having a higher than the capsule at a resonance frequency of 4 GHz) have a dielectric constant of 30 to 40 Å, which can improve the ceramic-free capacitor (ΝΡΟ-type ΜΙΧ) (:) Φ$ M w, 曰陶竞 composition. 败) "Characteristic temperature-compensated dielectric, the above is only the preferred embodiment of the present invention, not used for the day ^ this = Ming implementation Scope, the general scope of the patent application and the technical idea of the invention disclosed in the Ming Dynasty are still within the scope of the patent of the present invention. For example, the starting point of (4) may be BaC. 〇3'BaC2〇4, Ba(C2H5CO)H〇3 starting material\1 200900373 can be h3bo3 or b2o3, etc. [Simplified illustration] 0' > [Main component symbol description
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| TW200900373A true TW200900373A (en) | 2009-01-01 |
| TWI352072B TWI352072B (en) | 2011-11-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| TW96122018A TW200900373A (en) | 2007-06-20 | 2007-06-20 | Dielectric ceramic composition |
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| TW (1) | TW200900373A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110483034A (en) * | 2019-09-18 | 2019-11-22 | 如东宝联电子科技有限公司 | A kind of high dielectric constant NP0 type media ceramic |
| CN114804858A (en) * | 2021-01-28 | 2022-07-29 | 山东国瓷功能材料股份有限公司 | Low-temperature co-fired ceramic material for filter and preparation method and application thereof |
| CN116751059A (en) * | 2023-06-21 | 2023-09-15 | 西南石油大学 | ABO 4 Rare earth niobium/tantalate LTCC material and preparation method thereof |
| TWI881805B (en) * | 2024-04-19 | 2025-04-21 | 興勤電子工業股份有限公司 | Positive temperature coefficient thermistor and its manufacturing method |
-
2007
- 2007-06-20 TW TW96122018A patent/TW200900373A/en unknown
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110483034A (en) * | 2019-09-18 | 2019-11-22 | 如东宝联电子科技有限公司 | A kind of high dielectric constant NP0 type media ceramic |
| CN110483034B (en) * | 2019-09-18 | 2022-02-25 | 李吉晓 | High-dielectric-constant NP0 type dielectric ceramic |
| CN114804858A (en) * | 2021-01-28 | 2022-07-29 | 山东国瓷功能材料股份有限公司 | Low-temperature co-fired ceramic material for filter and preparation method and application thereof |
| CN114804858B (en) * | 2021-01-28 | 2023-07-04 | 山东国瓷功能材料股份有限公司 | Low-temperature co-fired ceramic material for filter and preparation method and application thereof |
| CN116751059A (en) * | 2023-06-21 | 2023-09-15 | 西南石油大学 | ABO 4 Rare earth niobium/tantalate LTCC material and preparation method thereof |
| TWI881805B (en) * | 2024-04-19 | 2025-04-21 | 興勤電子工業股份有限公司 | Positive temperature coefficient thermistor and its manufacturing method |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI352072B (en) | 2011-11-11 |
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