TW200906721A - Process and equipment for reacting silicon tetrachloride with zinc to produce pure silicon and zinc chloride - Google Patents
Process and equipment for reacting silicon tetrachloride with zinc to produce pure silicon and zinc chloride Download PDFInfo
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- TW200906721A TW200906721A TW97112571A TW97112571A TW200906721A TW 200906721 A TW200906721 A TW 200906721A TW 97112571 A TW97112571 A TW 97112571A TW 97112571 A TW97112571 A TW 97112571A TW 200906721 A TW200906721 A TW 200906721A
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- Taiwan
- Prior art keywords
- zinc
- reaction
- reactor
- zone
- molten
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- 239000011701 zinc Substances 0.000 title claims abstract description 44
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 title claims abstract description 30
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title claims abstract description 27
- 229910052725 zinc Inorganic materials 0.000 title claims abstract description 27
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000011592 zinc chloride Substances 0.000 title claims abstract description 20
- 235000005074 zinc chloride Nutrition 0.000 title claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 title abstract 4
- 239000010703 silicon Substances 0.000 title abstract 4
- VXEGSRKPIUDPQT-UHFFFAOYSA-N 4-[4-(4-methoxyphenyl)piperazin-1-yl]aniline Chemical compound C1=CC(OC)=CC=C1N1CCN(C=2C=CC(N)=CC=2)CC1 VXEGSRKPIUDPQT-UHFFFAOYSA-N 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title abstract 3
- 239000005049 silicon tetrachloride Substances 0.000 title abstract 3
- 238000006243 chemical reaction Methods 0.000 claims abstract description 41
- 238000000926 separation method Methods 0.000 claims abstract description 24
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 239000007795 chemical reaction product Substances 0.000 claims abstract description 10
- 238000002844 melting Methods 0.000 claims abstract description 9
- 230000008018 melting Effects 0.000 claims abstract description 9
- 239000007789 gas Substances 0.000 claims description 15
- 150000003839 salts Chemical class 0.000 claims description 11
- 238000005192 partition Methods 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 4
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 229910052707 ruthenium Inorganic materials 0.000 claims description 3
- 229910052797 bismuth Inorganic materials 0.000 claims description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 claims description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims 6
- KPZGRMZPZLOPBS-UHFFFAOYSA-N 1,3-dichloro-2,2-bis(chloromethyl)propane Chemical compound ClCC(CCl)(CCl)CCl KPZGRMZPZLOPBS-UHFFFAOYSA-N 0.000 claims 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims 2
- 150000001875 compounds Chemical class 0.000 claims 2
- 239000000203 mixture Substances 0.000 claims 2
- 241000282326 Felis catus Species 0.000 claims 1
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 claims 1
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 claims 1
- IEPTVZPDPRCAKM-UHFFFAOYSA-N [He].Cl.Cl.Cl.Cl Chemical compound [He].Cl.Cl.Cl.Cl IEPTVZPDPRCAKM-UHFFFAOYSA-N 0.000 claims 1
- 239000000155 melt Substances 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 229910052700 potassium Inorganic materials 0.000 claims 1
- 239000011591 potassium Substances 0.000 claims 1
- 238000004064 recycling Methods 0.000 claims 1
- 229910052708 sodium Inorganic materials 0.000 claims 1
- 239000011734 sodium Substances 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 229910001631 strontium chloride Inorganic materials 0.000 claims 1
- 230000008016 vaporization Effects 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- 239000002699 waste material Substances 0.000 claims 1
- 239000011787 zinc oxide Substances 0.000 claims 1
- 238000009835 boiling Methods 0.000 abstract description 2
- 239000011856 silicon-based particle Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 1
- 229910004028 SiCU Inorganic materials 0.000 description 1
- 229910003910 SiCl4 Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- -1 ZnF2 Chemical compound 0.000 description 1
- YPPQDPIIWDQYRY-UHFFFAOYSA-N [Ru].[Rh] Chemical compound [Ru].[Rh] YPPQDPIIWDQYRY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 210000001217 buttock Anatomy 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- VYLVYHXQOHJDJL-UHFFFAOYSA-K cerium trichloride Chemical compound Cl[Ce](Cl)Cl VYLVYHXQOHJDJL-UHFFFAOYSA-K 0.000 description 1
- 238000005660 chlorination reaction Methods 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 239000010419 fine particle Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- IREVRWRNACELSM-UHFFFAOYSA-J ruthenium(4+);tetrachloride Chemical compound Cl[Ru](Cl)(Cl)Cl IREVRWRNACELSM-UHFFFAOYSA-J 0.000 description 1
- FDNAPBUWERUEDA-UHFFFAOYSA-N silicon tetrachloride Chemical compound Cl[Si](Cl)(Cl)Cl FDNAPBUWERUEDA-UHFFFAOYSA-N 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- ZULTYUIALNTCSA-UHFFFAOYSA-N zinc hydride Chemical compound [ZnH2] ZULTYUIALNTCSA-UHFFFAOYSA-N 0.000 description 1
- 229910000051 zinc hydride Inorganic materials 0.000 description 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B61/00—Obtaining metals not elsewhere provided for in this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J4/00—Feed or outlet devices; Feed or outlet control devices
- B01J4/001—Feed or outlet devices as such, e.g. feeding tubes
- B01J4/002—Nozzle-type elements
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
- C01B33/00—Silicon; Compounds thereof
- C01B33/02—Silicon
- C01B33/021—Preparation
- C01B33/027—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material
- C01B33/033—Preparation by decomposition or reduction of gaseous or vaporised silicon compounds other than silica or silica-containing material by reduction of silicon halides or halosilanes with a metal or a metallic alloy as the only reducing agents
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G9/00—Compounds of zinc
- C01G9/04—Halides
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B5/00—General methods of reducing to metals
- C22B5/02—Dry methods smelting of sulfides or formation of mattes
- C22B5/04—Dry methods smelting of sulfides or formation of mattes by aluminium, other metals or silicon
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/18—Details relating to the spatial orientation of the reactor
- B01J2219/182—Details relating to the spatial orientation of the reactor horizontal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J2219/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J2219/19—Details relating to the geometry of the reactor
- B01J2219/192—Details relating to the geometry of the reactor polygonal
- B01J2219/1923—Details relating to the geometry of the reactor polygonal square or square-derived
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22B—PRODUCTION AND REFINING OF METALS; PRETREATMENT OF RAW MATERIALS
- C22B34/00—Obtaining refractory metals
- C22B34/10—Obtaining titanium, zirconium or hafnium
- C22B34/12—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08
- C22B34/1263—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction
- C22B34/1268—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams
- C22B34/1272—Obtaining titanium or titanium compounds from ores or scrap by metallurgical processing; preparation of titanium compounds from other titanium compounds see C01G23/00 - C01G23/08 obtaining metallic titanium from titanium compounds, e.g. by reduction using alkali or alkaline-earth metals or amalgams reduction of titanium halides, e.g. Kroll process
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Silicon Compounds (AREA)
Abstract
Description
200906721 九、發明說明: 【發明所屬之技術領域】 本發明係關於一種用於四氯化矽與辞反應以製造矽及 氯化辞的方法及裝置。 【先前技術】 如國際專利申請案第W02006/1001 利第1 101 1925 Α及11092130號所提,^(^與Ζη的反應 可在批次反應器中進行,其涉及將氣態SiC、注入至過量 的液態Zn中,同時將氣相的ZnC12移出,隨後使Zn蒸發, 接著進行Si的熔化/澆鑄。這些方法的明顯缺失為,其全 部皆為批次程序,而且注入與蒸發步驟非常的耗時。另外, 、:為450-1450 C的大溫度範圍’使得對於此類反應器的材 質有著強烈的需求。再者,美國專利第2773745、28〇4377、 ㈣川和3041 145號說明了在氣相中以〜使⑽4還原 的方法,其係一種更難以發展成工業規模的方法。 【發明内容】 本發明之目的為以已知的解決方法克服上述問題 在使四氯化⑦與辞反應的基礎上製造[因此,本传 種用來製造矽的新穎連續反應器,纟莽 ^附的獨立項中請專利範目1中㈣義的特徵所界Γ :亥裝置係藉由所附的獨立項申請專利範目 疋義的特徵所界定。 r所 本發明之較佳具體實例係定義 2]〇及12_17巾。 蜀項甲6月專利範圍 200906721 【實施方式】 如上所述,本發明關於一種用於四氯化矽與液態(熔 融)鋅反應以製造矽及氣化鋅的方法及裝置,其形式為連 續反應器1。s玄方法較佳係在高於Zn之溶點(>4丨9。〇)且 低於ZnCl2之沸點(732。〇之情況下,以恆溫方式操作, 較佳而言為450-50(TC,如圖1 ( A及B)所示,較佳而言, 反應器i係由反應室或產生室2,以及分離區3所構:, f 其中該產生室具有溝槽或管道所形成的反應區,可使溶融 的Zn緩慢地流過’而反應產物Si 4、& ”口 znc、6則由200906721 IX. DESCRIPTION OF THE INVENTION: TECHNICAL FIELD OF THE INVENTION The present invention relates to a method and apparatus for the reaction of ruthenium tetrachloride with rhodium ruthenium to produce ruthenium and chlorination. [Prior Art] As mentioned in International Patent Application No. WO2006/1001, No. 1 101 1925, and No. 1,092,130, the reaction of ^(^ with Ζη can be carried out in a batch reactor involving the injection of gaseous SiC into excess In liquid Zn, the ZnC12 in the gas phase is simultaneously removed, followed by evaporation of Zn, followed by melting/casting of Si. The obvious lack of these methods is that all of them are batch processes, and the injection and evaporation steps are very time consuming. In addition, the large temperature range of 450-1450 C makes a strong demand for the material of such reactors. Furthermore, U.S. Patent Nos. 2773745, 28〇4377, (4) Sichuan and 3041 145 illustrate the gas. The method of reducing (10) 4 in the phase is a method which is more difficult to develop into an industrial scale. SUMMARY OF THE INVENTION The object of the present invention is to overcome the above problems by a known solution in the reaction of tetrachlorinated 7 Manufacture on the basis of the above [Therefore, the novel continuous reactor used to make bismuth in this species, in the separate item of 纟莽^ attached, is bounded by the characteristics of the patent in the scope of patent (1): the device is attached by the independence Patent application The preferred embodiment of the present invention is defined by the following description: 2] 〇 and 12 _ 17 巾. 蜀 甲 6 6 6 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 A method and apparatus for reacting cerium chloride with liquid (melt) zinc to produce cerium and zinc hydride in the form of a continuous reactor 1. The sigma method is preferably at a melting point above Zn (> 4 丨 9. 〇) and lower than the boiling point of ZnCl2 (732. 〇, operating in a constant temperature mode, preferably 450-50 (TC, as shown in Figure 1 (A and B), preferably, reactor The i is composed of the reaction chamber or the generating chamber 2, and the separation zone 3: f, wherein the generating chamber has a reaction zone formed by a groove or a pipe, so that the molten Zn can slowly flow through the reaction product Si4, & ” mouth znc, 6 by
Zn 5處分離且可被移出。μ氣體可經由位於反應區2 底部或壁上的噴射流喷嘴7而注入液態鋅浴5巾。視情況 而定,可使用惰性的載體氣體,例如氬、氦或氮,與四氣 切氣體-起注入’以降低在反應器内部的氧氣分壓。沿 者注入室2設置的喷射流7可確#训14有良好的分佈, 噴::體與金屬有最大的接觸面積。再者,在液態鋅浴中, 液體ill的方向為水平或者稍微朝下則吏㈣氣體在 而留時間最大化,因而可促成最大的轉化率。然 旦S i C14的細泡泱|言产 泡則破裂,並留下zJ:了’則反應開始,而氣 嘴7亦可朝相滴與Si顆粒。喷射流噴 朝相對於别頭方向8所指的熔融 成角度的方向進杆机署m ^ 助万向 並且將反應產物攜二廡 種力使Zn循環, 各邊上可—it反 分離區3巾。在反應區的 亦即二=多個…。可獨立地操作喷射流喷嘴, 周正通過各個噴嘴的SiCU度及氣體流速 200906721 系統達到最佳化狀態。 在反應區2下游的八Q & 广砑妁刀離區3中,產物—液態ZnCl2 6 及固態Si 4可自過量的Zn 5中,藉由㈣度之差異而分 離。鋅之密度為7.lg/em3^si的密度則為23_3, :/予在頂。ZnCl2之密度約為2 9心爪3而構成中間相, 實際上難以將其從Si細顆粒中分離。為了克服這個問題, 可將小量的氟化物’例如ZnF2、CaF25l KF添加在鹽中以 改變位於熔融鹽與Si顆粒之間的介面張力。為了進一步修 飾該鹽的性質,可添加KCl、CaC…aC1。亦可將鹽(; 9 )添加在表面上以使炫融Zn與线之間的接觸減至最小。 #基於連續性,或者在某特定頻率下,可藉由某種吸取 裝置(未顯示),或者藉由將顆粒自表面處移丨(亦未顯 示),並且可能地連同2叫之其他鹽成份與^的部份一 起形成浮渣層,而實際上將Si顆粒移出/回收。此步驟可 在錢該程序’亦即注人sicu之程序停止之情況下進行。 將虽含的浮渣輸送至分離爐中以使其熔化並進行洗鑄。 在將富含Si的浮渣加熱至Si的熔融溫度之期間,可有效 j使Zn及Ζηα2雜質蒸發,並收集之。在將Si移出後, 實際上可將剩下的2„及Zncl2相的部份自連續反應器中移 出。 在將富含Si的浮渣相自分離區中移出後,較佳地可藉 由某些泵送裝置(未顯示)而將鄰近的ZnCl2相移出,且 舉例而言,可將其輸送至電解單元中以使其分離成鋅及氯 氣。由此方法製備的鋅可在本發明所說明的方法中作為進 200906721 料物質使用。It is separated at Zn 5 and can be removed. The μ gas can be injected into the liquid zinc bath 5 via a jet nozzle 7 located at the bottom or wall of the reaction zone 2. Optionally, an inert carrier gas, such as argon, helium or nitrogen, may be injected with the four gas cut gas to reduce the partial pressure of oxygen inside the reactor. The jet stream 7 disposed along the injector chamber 2 can be well distributed. The spray:: the body has the largest contact area with the metal. Further, in the liquid zinc bath, the direction of the liquid ill is horizontal or slightly downward, so that the residence time of the gas is maximized, thereby contributing to the maximum conversion. However, the fine bubbles of S i C14 言 rupture, and leave zJ: ', then the reaction begins, and the nozzle 7 can also drop to the Si particles. The jet stream is fed into the direction of the melting angle indicated by the direction 8 of the other head, and the reaction product is loaded with two kinds of force to circulate the Zn, and the sides can be detached. towel. In the reaction zone, that is, two = a plurality of .... The jet nozzles can be operated independently, and the system is optimized by the SiCU degree of each nozzle and the gas flow rate of the 200906721 system. In the eight Q & knives away from zone 3 downstream of reaction zone 2, the product - liquid ZnCl2 6 and solid Si 4 can be separated from the excess Zn 5 by the difference in (four) degrees. The density of zinc is 7.lg/em3^si and the density is 23_3, :/ is at the top. The density of ZnCl2 is about 29 cores 3 to constitute an intermediate phase, and it is actually difficult to separate it from the Si fine particles. To overcome this problem, a small amount of fluoride, such as ZnF2, CaF25l KF, may be added to the salt to change the interfacial tension between the molten salt and the Si particles. In order to further modify the properties of the salt, KCl, CaC...aC1 may be added. Salt (; 9 ) can also be added to the surface to minimize contact between the fused Zn and the wire. #based on continuity, or at a particular frequency, by some sort of suction device (not shown), or by moving the particles from the surface (also not shown), and possibly together with other salt ingredients called 2 The scum layer is formed together with the portion of ^, and the Si particles are actually removed/recovered. This step can be carried out under the condition that the program of the money, that is, the sicu program is stopped. The scum contained therein is sent to a separation furnace to be melted and washed. During the heating of the Si-rich scum to the melting temperature of Si, it is effective to evaporate the Zn and Ζαα2 impurities and collect them. After the Si is removed, the remaining 2' and Zncl2 phases can actually be removed from the continuous reactor. After removing the Si-rich scum phase from the separation zone, preferably by Some pumping means (not shown) remove the adjacent ZnCl2 phase and, for example, can be transported to the electrolysis unit to separate it into zinc and chlorine. The zinc prepared by this method can be used in the present invention. The method described is used as the material for the 200906721.
Zn可由分離區而彡 離匕而循%回反應器(反應區)的 步驟可藉由引入隔壁1n收=α 此 ^ 10將反應區與分離區隔開而達成。 隔壁10保留了浮在丁苜却& 1 逆成 在頁4的相,而較重的ζη相則在隔壁 方-動。如箭頭"所指,添加炫融Ζη以取代在反應中消 耗的Ζη ’並且維持操作視窗内最適的金屬水平高度可在隔 壁之後完成。 以氣體注入速率作為限制因素之情況下,可藉由所需 的產生速率以分別控制產生t 3及反應區2的大小。假使 氣體的流速太大而產生擾流喷射流時,不管速度為何,噴 射μ係以約1 3度之半角而增長。假定在喷射流中有平坦 的速度分佈曲線,其速度隨著距喷嘴端之距離而變化之情 形顯示於圖2中。由圖可見,在約6〇倍喷嘴直徑之情況 下,平均速度降低至原喷嘴速度的〇 〇〇1。當喷嘴直徑為5 mm且在喷嘴内的氣體流速為330 m/s時,在距喷嘴僅3〇 處’其平均速度降低1000倍至0.33 m/s。亦需注意,反應 產物ZnC〗2及Si分別為液體及固體,而非氣體。因此,假 若僅使用惰性氣體,或者在反應過程中已產生氣態產物 時’距離喷嘴遠處的流體顯然較不紊亂。在4 8 〇 X:且壓力 相當於30 cm Ζη之情況下,直徑為i cm之SiCl4氣泡(〇.4 cm3 )將產生直徑僅為1.3 cm之ZnCl2液滴(0,9 mm3 )及 直徑僅為0.6 mm之Si顆粒(〇.〇9 mm3 )。 如圖1所示’當喷嘴間的距離為1 5 cm時,在反應區 2中可設置20個喷嘴。在舉例而言480°c下進行操作時, 8 200906721 」曰在3有長4 m、寬50 em且高30-60 cm之熔融Zn的 反應區中,其相當於在反應區中含有4260-8520 kg的Zn, 那麼於每小時消私丨 耗1080 kg之zn ( 015 m3)的情況下將可 裝 ^ 230 kg 的 Sl ( 0.1 m3)及 2250 kg 的溶融 ZnCl2 ( 0.77 在8〇/°之正常運作時間下,Si的年產量可達1620 嘴的量。 應使反應區下游的公雜pg* + 好的刀離& 3具有足夠的容積以讓反應 產物可3藉由重力的作用而分離。分離區的容積應維持在2 ^ 的ι及金屬之間。在這樣的容積下,用以將Si/ZnCl2 移出且進行Zn/鹽的添加之適當頻率為每小時一次。 以液態Zn將SiCl4還原而產生液態ZnCl2為放熱反應, 二反應熱;t3 H為725GG "m。卜此意味著可能有必要將熱 :出乂在‘作過程中維持常溫狀態。在程序啟始前,可藉 者由外部使用熱電p且(在圖中未顯示),或者藉由可用於 ::熱’同時在操作中進彳Zn的熔化及熱的移出的熱交換 Γ ^ ;1 (亦未顯不)進行加熱。後者需使熱交換器媒介在 外^進行加熱至高達約5〇〇。〇的溫度,然後在反應器壁中 勺s道或冷卻套官中進行循環以將熱移出。此種熱交換器 媒"的實例可$多成份鹽或炼融的嫁。假使要以不同的方 式進仃加熱’則可使用水進行冷卻。應該不需要使用感應 式加熱。圖1中未顯示關於加熱及冷卻的實際解決方案, 仁對於热習本項技術者而言,應假設其為非發明性的設 計。 車乂佳而δ ’反應器應該裝設套殼(未顯示)以控制反 9 200906721 應器内部的办g —γ-,-, 巧二氣。可經由位於反應區上方的管道將廢氣吸 除’且原則上,可在將殘留的廢氣導向洗滌器前將任何微 量的SlCl4凝結。惰性氣體可經由喷嘴或其他裝置注入以 降低氧氣的分壓。當位於分離區中的套殼被開啟而用於移 出Si及Znci2時,即可使用此方法。 如圖1 A)、B)所示,反應區2設計成淺u形溝槽或管 道中’主射噴嘴係沿著由位於端點12之隔壁10至位於 另端點13之分離區3的溝槽長度而設置。然而,如定 義於申睛專利範圍中的本發明並未限制在此種設計中。因 此,反應室可正好為直線型、縱向的溝槽或管道,或者其 可為一般而言,具有分離區且其間具有隔壁的室之部份或 區域。 【圖式簡單說明】 以下將藉由實例及參照以下圖式而進一步說明本發 明,其中: 圖1 A),B)顯示一種根據本發明裝置的主要示意圖, 其剖面側視圖為A),而俯視圖為b)。 圖2為顯示速度為與根據本發明所使用的喷嘴距離的 函數的曲線圖。 【主要元件符號說明】 圖1 A) 1 反應器 2 反應區或室或反應室或產生室 3 分離區或產生室 200906721 4 Si 5 Zn或液態辞浴或熔融鋅 6 ZnCl2 7 喷射流喷嘴或喷嘴或喷射流 8 方向箭頭 9 鹽 10 隔壁 圖1 B) 1 反應器 2 反應區或室或反應室或產生室或溝槽或管道 3 分離區或產生室 4 Si 5 Zn或液態鋅浴或溶融鋅 6 ZnCl2 7 喷射流噴嘴或喷嘴或噴射流 8 方向箭頭 9 入口 10 隔壁 11 箭頭或入口 12 上端或端點 13 下游端或端點 11The step of Zn being separated from the separation zone by the separation zone and passing back to the reactor (reaction zone) can be achieved by introducing the partition wall 1n to receive α = 10 to separate the reaction zone from the separation zone. The partition 10 retains the phase which is floating on the buttocks & 1 reversed on page 4, while the heavier twisted phase is moved in the next wall. As indicated by the arrow ", the addition of 炫ηΖ to replace the Ζη′ consumed in the reaction and maintaining the optimum metal level in the operating window can be completed after the partition. In the case where the gas injection rate is used as a limiting factor, the magnitude of t 3 and the reaction zone 2 can be separately controlled by the desired production rate. If the flow rate of the gas is too large to generate a spoiler jet, the jet μ grows at a half angle of about 13 degrees regardless of the speed. Assuming a flat velocity profile in the jet, the velocity is a function of the distance from the nozzle tip as shown in Figure 2. It can be seen from the figure that the average speed is reduced to 〇 〇〇 1 of the original nozzle speed with a nozzle diameter of about 6 〇. When the nozzle has a diameter of 5 mm and the gas flow rate in the nozzle is 330 m/s, the average speed is reduced by 1000 times to 0.33 m/s at a distance of only 3 距 from the nozzle. It should also be noted that the reaction products ZnC 2 and Si are liquids and solids, respectively, rather than gases. Therefore, if only an inert gas is used, or if a gaseous product has been produced during the reaction, the fluid far from the nozzle is clearly less disordered. At 4 8 〇X: and the pressure is equivalent to 30 cm Ζη, the Sicm4 bubble (〇.4 cm3) with a diameter of i cm will produce ZnCl2 droplets (0,9 mm3) with a diameter of only 1.3 cm and diameter only It is a 0.6 mm Si particle (〇.〇9 mm3). As shown in Fig. 1, when the distance between the nozzles is 15 cm, 20 nozzles can be provided in the reaction zone 2. When operated at, for example, 480 ° C, 8 200906721 曰 is in the reaction zone of molten Zn having a length of 4 m, a width of 50 em and a height of 30-60 cm, which corresponds to 4260 in the reaction zone. 8520 kg of Zn, then 230 kg of Sl (0.1 m3) and 2250 kg of molten ZnCl2 (0.77 at 8 〇/°) with an hourly consumption of 1080 kg zn ( 015 m3) Under normal operating time, the annual production of Si can reach the volume of 1620. The common pg* + good knife away & 3 downstream of the reaction zone should have sufficient volume to allow the reaction product to be 3 by gravity. Separation. The volume of the separation zone should be maintained between 2 ^ ι and the metal. Under such a volume, the appropriate frequency for removing Si/ZnCl2 and adding Zn/salt is once per hour. The reduction of SiCl4 produces liquid ZnCl2 as an exothermic reaction, and the second reaction heat; t3 H is 725GG "m. This means that it may be necessary to keep the heat in the process of maintaining the normal temperature. Before the start of the program, The borrower uses thermoelectric p from the outside and (not shown in the figure), or by using::heat' at the same time The heat exchange of the Zn and the heat removal of the Zn is carried out. The latter is heated to a temperature of up to about 5 Torr. Circulation in the scoop or cooling jacket in the reactor wall to remove heat. An example of such a heat exchanger medium can be multi-component salt or smelting. If it is to be heated in different ways 'The water can be used for cooling. Inductive heating should not be required. The actual solution for heating and cooling is not shown in Figure 1. For the heat technician, it should be assumed to be a non-inventive design. The car 乂 佳 and δ 'reactor should be equipped with a casing (not shown) to control the anti-2009 200906721 internal g-γ-, -, Qiaoqi. The exhaust can be sucked through the pipe above the reaction zone. In addition to, and in principle, any traces of SlCl4 can be condensed before directing the residual exhaust to the scrubber. The inert gas can be injected via a nozzle or other means to reduce the partial pressure of oxygen. When the casing in the separation zone is opened For removing Si and Znci2 This method can be used. As shown in Figures 1 A) and B), the reaction zone 2 is designed as a shallow u-shaped groove or in the pipe. The main injection nozzle is located along the partition 10 at the end point 12 to the other end. The groove length of the separation zone 3 of the point 13 is set. However, the invention as defined in the scope of the claims is not limited to such a design. Thus, the reaction chamber can be exactly a straight, longitudinal groove or conduit, or it can be, in general, a portion or region of the chamber having a separation zone with a partition therebetween. BRIEF DESCRIPTION OF THE DRAWINGS The invention will be further illustrated by the following examples and with reference to the following drawings in which: Figure 1 A), B) shows a schematic view of a device according to the invention, the cross-sectional side view of which is A) The top view is b). Figure 2 is a graph showing the speed as a function of the distance of the nozzle used in accordance with the present invention. [Main component symbol description] Figure 1 A) 1 Reactor 2 Reaction zone or chamber or reaction chamber or production chamber 3 Separation zone or production chamber 200906721 4 Si 5 Zn or liquid bath or molten zinc 6 ZnCl2 7 Jet nozzle or nozzle Or Jet 8 Directional Arrow 9 Salt 10 Partition Figure 1 B) 1 Reactor 2 Reaction zone or chamber or reaction chamber or chamber or trench or pipe 3 Separation zone or chamber 4 Si 5 Zn or liquid zinc bath or molten zinc 6 ZnCl2 7 jet nozzle or nozzle or jet 8 direction arrow 9 inlet 10 partition 11 arrow or inlet 12 upper end or end point 13 downstream end or end point 11
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| NO20071852A NO20071852L (en) | 2007-04-11 | 2007-04-11 | Process and equipment for the reduction of silicon tetrachloride in zinc for the production of high purity silicon and zinc chloride |
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|---|---|---|---|---|
| FR1582780A (en) * | 1968-01-10 | 1969-10-10 | ||
| DE2803858C2 (en) * | 1978-01-30 | 1983-09-15 | Klöckner-Humboldt-Deutz AG, 5000 Köln | Plant for the continuous refining of molten raw material, in particular raw lead or raw tin |
| JP3844856B2 (en) * | 1997-09-11 | 2006-11-15 | 住友チタニウム株式会社 | Manufacturing method of high purity silicon |
| TW200700316A (en) * | 2005-03-24 | 2007-01-01 | Umicore Nv | Process for the production of si by reduction of sicl4 with liquid zn |
-
2007
- 2007-04-11 NO NO20071852A patent/NO20071852L/en not_active Application Discontinuation
-
2008
- 2008-04-04 WO PCT/NO2008/000127 patent/WO2008127120A1/en not_active Ceased
- 2008-04-08 TW TW97112571A patent/TW200906721A/en unknown
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI471267B (en) * | 2011-10-12 | 2015-02-01 | C S Lab In Technology Ltd | Manufacture of high purity silicon fine particles |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2008127120A1 (en) | 2008-10-23 |
| NO20071852L (en) | 2008-10-13 |
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