200905734 九、發明說明： 【發明所屬之技術領域】 本發明係有關一種離子植入方法，特別是一種可製作特 殊劑量離子分布之離子植入方法。 【先前技術】 近年來，如大型積體電路(Large-scale integration，LSI) 及記憶體等半導體裝置之製程相當複雜，半導體基板在尺寸 上變大且極為昂貴，故更精確地控制摻質（doping)以符合大 型半導體裝置體積與密度為一重要議題。也因此，離子植入 方法的實際應用變的更為重要。 一般而言，離子植入方法係將欲摻質之分子離子化，並 加速這些被離子化的摻質，以掃描的方式將一特定劑量之離 子植入一基板的特定區域中。其中，離子植入方法可更精確 的控制摻質，以提供更佳的均勻度。另，於製造半導體設備 的製程中，閘極（gate)關鍵尺寸（critical dimension, CD)的分 布直接影響產品製造良率。然而，要依據閘極CD在基板上 的分布及其旁壁（sidewall)旁形成間隙壁（spacer)的製程來控 制電晶體參數的變化是非常困難的。當基板的尺寸大於 300mm而半導體裝置越來越小時，控制電晶體參數的變化將 會是一個重大的問題。也就是說，閘極的硬式罩幕(hard mask) 與閘極圖案的蝕刻製程會依據基板的位置而不具固定的尺 寸。因此，閘極的尺寸變的不一致，以產生依據不同閘極長 度而變化的電晶體參數。 故，於多種半導體製程中之離子植入程序，常需要經由 基板平面中任意讓劑量分布不均以及任意變更的特性，以校 5 200905734 正於前置製程中所導致的臨界電壓（thres〇ld v〇Uage)分 均之問題。 + 習知—種改變離子束植入時掃描速度的方法，係提供一 離子濃度均勻分布之離子束，藉由改變掃描速度及旋轉乾村 以完成植人預定圖案之非均㈣量分布之離子。但此種做 法，為提供離子濃度均勾分布之離子束，需要花費相當時間 去調校離子束之均勻度㈣formity)以利後續植入作業，此 外’除了調校時間之浪費，調校技術之不易亦是另—難題。 【發明内容】 蓉於上述問題，本發明目的之—係提供—種離子植入方 Ϊ置造型或p型摻雜劑量分布以補償晶圓在 導致a曰圓如Ϊ影，刻所造成元件幾何尺寸不均勾而 日日固内70件私界電壓（threshold voltage)分布不均。 變動m目y社—储供—飾㈣人料，^需同時以 果動速羊料加上轉動轉即可達闕殊劑量離子分布之效 提供提供—種離子植人方法，因為不需要 不僅如此可有效減少離子束濃度分布的調校時間， 不僅如此’亦可減少製程所需時間，進而提高產能。 法，係提供—種調整離子束掃描速率之方 心度分布，計 為了達到上述目的，太詻日 法，用於將離子植入隸本發明一實施例之一離子植入方 子植入一靶材，離子植入方法，包括：提供一 200905734 離子束’其中離子束巾含有複數個離子；轉絲材；以及將 離子束中之離子依據一等速率掃描植入輕材。 本發明又一實施例之一離子植入方法，用於將離子植入 一靶材，離子植入方法，包括：提供一離子束，其中離子束 中含有複數個離子；以及將離子束中之離子依據一掃描速率 植入把材，其中掃描速率係為一變動值。 本發明又一實施例之一種調整離子束掃描速率之方 法，用於將一離子束中之複數個離子植入一靶材，其中離子束可為 濃度非均勻分布之離子束，調整離子束掃描速率之方法：取 =離子束之濃度分布；取得靶材所需植入離子之濃度分布；以及計 算離子束之一掃描速率曲線，其中掃描速率曲線係針 漢度分布與料柄錄人料之濃度分布麵運算崎。束之 1更容 之功敦。 总必从下藉由具體實施例配合所附的圖式詳加說明 易瞭解本發明之目的、技_容、特點及其所逹成 實施方式】200905734 IX. INSTRUCTIONS: TECHNICAL FIELD OF THE INVENTION The present invention relates to an ion implantation method, and more particularly to an ion implantation method capable of producing a special dose ion distribution. [Prior Art] In recent years, processes such as large-scale integration (LSI) and memory semiconductor devices have been complicated, and semiconductor substrates have become large in size and extremely expensive, so that the dopants are more accurately controlled ( Doping) is an important issue to meet the size and density of large semiconductor devices. Therefore, the practical application of the ion implantation method becomes more important. In general, ion implantation methods ionize molecules to be doped and accelerate these ionized dopants to scan a specific dose of ions into a specific region of a substrate. Among them, the ion implantation method can control the dopant more precisely to provide better uniformity. In addition, in the manufacturing process of semiconductor devices, the distribution of gate critical dimensions (CDs) directly affects product manufacturing yield. However, it is very difficult to control the change of the transistor parameters depending on the distribution of the gate CD on the substrate and the process of forming a spacer next to the side wall. When the size of the substrate is larger than 300 mm and the semiconductor device is getting smaller and smaller, controlling the change of the transistor parameters will be a major problem. That is to say, the hard mask and gate pattern etching process of the gate is not fixed according to the position of the substrate. Therefore, the dimensions of the gates are inconsistent to produce transistor parameters that vary according to different gate lengths. Therefore, the ion implantation process in a variety of semiconductor processes often requires any variation in the dose distribution and arbitrarily changed characteristics in the plane of the substrate, so that the threshold voltage caused by the pre-process is 2009. v〇Uage) The problem of equalization. + Conventional - a method for changing the scanning speed of ion beam implantation, providing an ion beam with a uniform ion concentration, by changing the scanning speed and rotating the village to complete the non-uniform (four) amount distribution of the implanted pattern . However, in order to provide an ion beam with a uniform ion concentration, it takes a considerable amount of time to adjust the uniformity of the ion beam (four) formity for subsequent implantation, and in addition to the waste of the adjustment time, the tuning technique It is not easy but also another problem. SUMMARY OF THE INVENTION In view of the above problems, the object of the present invention is to provide an ion implantation square shape or a p-type doping dose distribution to compensate for the wafer geometry caused by a wafer. The size is uneven and the 70 threshold voltages are unevenly distributed in the day. The change of m mesh y - the supply and supply - decoration (four) people, ^ need to simultaneously use the fruit and speed of the sheep material plus the rotation to achieve the effect of the special dose ion distribution provides a method of ion implantation, because not only need not only This can effectively reduce the adjustment time of the ion beam concentration distribution, not only to reduce the time required for the process, thereby increasing productivity. The method provides a square centroid distribution for adjusting the scanning rate of the ion beam. In order to achieve the above object, the method for implanting ions into a target is implanted into a target by ion implantation in an embodiment of the invention. The ion implantation method comprises: providing a 200905734 ion beam 'where the ion beam towel contains a plurality of ions; rotating the wire; and implanting ions in the ion beam into the light material according to a first rate scanning. In another embodiment of the present invention, an ion implantation method for implanting ions into a target, the ion implantation method includes: providing an ion beam, wherein the ion beam contains a plurality of ions; and the ion beam The ions are implanted into the material at a scan rate wherein the scan rate is a varying value. In another embodiment of the present invention, a method for adjusting an ion beam scanning rate is used to implant a plurality of ions in an ion beam into a target, wherein the ion beam can be an ion beam having a non-uniform concentration distribution, and the ion beam scanning is adjusted. Rate method: taking the concentration distribution of the ion beam; obtaining the concentration distribution of the implanted ions required for the target; and calculating the scan rate curve of the ion beam, wherein the scan rate curve is the needle distribution and the handle is recorded The concentration distribution surface is calculated by Saki. The bundle of 1 is more tolerant. The purpose of the present invention, its features, its features, and its implementation will be apparent from the following detailed description of the embodiments.
分布可本ΓΓΓί㈣上植人特殊劑量分布，而這個特殊， 量分布复闻種形狀，當,然也可以是平坦狀，1均^里 分布狀:本rr之方法係依據= 需效果。另速率曲線’亚於適當情況下轉動靶材以達至“束 以完全控制：可依據製程需要調整靶材與垂直輛之傾斜魚： 么實施例僅做—說明，非用以限定本發明。下所述之較 子植人 中離 Ί 本發明之—實施例之一離子植入方法， 子束中Ϊ古此離子植入方法，包括：提供-離子束: 3有複數個離子。接下來，轉動靶材。最後 用於將離 其 將 200905734 離子束中之離子依據-等速率掃描植人帅。於下述第一實 施例與第三實施财，即是利料速率掃躲材並配合轉動 祀材以達成所需圖案，其詳細說明如τ。請先參考第i圖， 第1圖所示為根據本發明離子植人方法第—實施例之之離子 激度分布圖。-般而言，單片式離子植人之離子束濃度分布 如第1圖之濃度曲線B01所示’此為—均勻之離子束，我們 t易改變離子束濃度分布’並依實際需求提供所需的離子 束遭度分布（如濃度曲線队2所示），而在植入的過程中，掃描 =是等，的’並轉_材以達到所需的劑量分布，而這個 K動可以S連續性或是任意角度的組合，例如〇度與彻产 或〇度' 90度、180度或270度。再者，若為連續性轉動 料或是變速 而非連續性轉動時，各角度所植 同，依所需的劑量分布圖而；7 4相冋或不 第21妾續if說明4又—實施例中，請搭配參考第1圖及 第2圖係、姆、轉動轴與垂絲的示意圖。於此實 歸 '轉動軸與垂直輔之位置關係如第2 靶材10的轉動軸(twist)20係垂直於乾材1〇，在不 ;〇二’轉動軸2 〇亦垂直於垂直軸3 〇。當離子束以方 :第1圖之濃度*線，則，只要束將:度材:布^^^^ 差180度轉動，如雙箭頭方向B t又目 圖之以料‘，即能製造㈣叙^辰/分布如第i 二著法於ί :第實施::=、用等速率_ =藉由改軸掃描路徑密 == 里。請參考第3Α圖及第3BW，第3Α圖離=入之劑 不同實施例之-维卢ρ 弟Β圖所示為 、准Μ純之4圖，箭頭指^向代表掃 200905734 描方向，如圖所示，掃描路徑密度越高則代表植入之離子劑 量就越高，但可以理解的是，其掃描路徑並不限於圖式中所 繪示，任何依據靶材所需植入離子濃度分布所改變的掃描路 徑，皆函括於本發明之範疇内。 於上述實施例中，依據靶材所需植入劑量分布改變離子 束分布或改變掃描路徑密度，並於掃描過程中轉動靶材以達 到最佳效果，其轉動可以是連續或不連續，而掃描方式可以 是一維或二維。另，等速率掃描動作可讓機械控制更容易以 降低控制設備的負荷。 此外，亦可使用變動速率掃描的方式來進行離子植入作 業，以下即以不同實施方法逐一說明。 於第三實施例中，係依據靶材所需植入劑量分布計算出 離子束濃度分布與掃描速率曲線。以所需劑量分布為一圓帽 型為例，如第4圖所示，在掃描的過程中，由於進入乾材時 與離開靶材時所需劑量較少，則其掃描速率較快；靶材中心 所需離子劑量較多時，則其掃描速率較慢，如此即可製造出 在掃描方向的特殊劑量分布，其掃描速率分布圖如第5圖之 速率曲線VQ1所示。於一實施例中，離子束分布與變速率掃 描方向垂直，故於垂直掃描方向之劑量分布也可呈現所需結 果。 接續上述說明，於又一實施例中，這個方法所提供的離 子束分布可以不是單一，例如先以一均勻的離子束做變速率 掃描後，再變化離子束濃度分布，以等速率掃描，其結果會 等同於改變離子束濃度加上變速率掃描之結果，因此，離子 束濃度分布與速率掃描曲線不限制於單一組合，可以是兩組 或以上之組合。另，掃描速率曲線亦可是不對稱，如第5圖 之速率曲線VG2，不對稱的掃描速率只需在植入的過程中， 9 200905734 力口上將_轉動㈣肖度減m 率曲線相同的結果。 冉亦可達成與對稱速 接著，請參考第6圖，第6 m & _ 率掃描之速率曲線示意圖。於第四實施例之變速 需植入劑量分布改變歸每.，龜據乾材所 子束濃度分布改變每一單一婦=與依據離 之預定離子劑量分布為例， ^革m圖所示 快，之後放慢速率，過了心中心、:=子束時數度較 到接近如第4圖所2劑度的效果加成，即可達 五實施例之變月率^第7圖所不’第7圖所示為本發明第 中，每— CAS之速率曲線示意圖。於第五實施例The distribution can be ΓΓΓί (4) on the special dose distribution of the implant, and this special, quantitative distribution of the shape of the resounding species, when it can also be flat, 1 uniform ^ distribution In addition, the rate curve 'turns the target as appropriate to achieve "the beam is fully controlled: the tilting fish of the target and the vertical vehicle can be adjusted according to the process requirements: the embodiment is merely illustrative" and is not intended to limit the invention. The ion implantation method of the present invention is one of the embodiments of the present invention. The ion implantation method in the sub-beam includes: providing an ion beam: 3 having a plurality of ions. Rotating the target. Finally, it will be used to scan the ions in the 200905734 ion beam according to the iso-rate scanning. In the following first embodiment and the third implementation, the profit rate is swept and matched. Rotating the coffin to achieve the desired pattern, the detailed description is as τ. Please refer to the i-th diagram first, and the first figure shows the ion excitability distribution of the ion implantation method according to the present invention. In other words, the ion beam concentration distribution of the monolithic ion implantation is as shown in the concentration curve B01 of Fig. 1 'this is a uniform ion beam, we can easily change the ion beam concentration distribution' and provide the required ions according to actual needs. Beam distribution (eg concentration curve) 2)), while in the process of implantation, scan = is equal, 'and turn to the material to achieve the desired dose distribution, and this K can be S continuity or any combination of angles, such as twist With the production or twist '90 degrees, 180 degrees or 270 degrees. Moreover, if it is a continuous rotating material or a variable speed rather than a continuous rotation, the angles are the same, according to the required dose distribution; 7 4 phase 冋 or not 21 妾 continued if the description 4 again - in the embodiment, please refer to the diagrams of Figure 1 and Figure 2, the um, the axis of rotation and the vertical wire. Here is the 'rotation axis and vertical Auxiliary positional relationship such as the second target 10's twist 20 is perpendicular to the dry material 1〇, no; the second 'rotation axis 2 〇 is also perpendicular to the vertical axis 3 〇. When the ion beam is square: 1 concentration of the line * line, then, as long as the beam will: the material: cloth ^ ^ ^ ^ difference 180 degrees of rotation, such as the direction of the double arrow B t and the eye of the material, can be manufactured (four) Xu / Chen / distribution The second method of ii: the first implementation:: =, with the equal rate _ = by the axis of the scan path dense ==. Please refer to the 3rd and 3BW, the 3rd figure is different from the agent -dimensional ρ Β Β 所示 、 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 4 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 2009 Yes, the scanning path is not limited to that shown in the drawings, and any scanning path changed according to the required implant ion concentration distribution of the target is included in the scope of the present invention. The implant dose distribution required to change the ion beam distribution or change the scan path density, and rotate the target during scanning to achieve the best effect, the rotation can be continuous or discontinuous, and the scanning mode can be one-dimensional or two-dimensional In addition, the iso-rate scanning action makes mechanical control easier to reduce the load on the control device. In addition, the ion implantation operation can also be performed by using a variable rate scanning method, which will be described one by one in different implementation methods. In the third embodiment, the ion beam concentration distribution and the scan rate curve are calculated based on the implant dose distribution required for the target. Taking the desired dose distribution as a round cap type as an example, as shown in Fig. 4, during the scanning process, the scanning rate is faster because the dose required when entering the dry material and leaving the target is small; When the center requires a larger ion dose, the scan rate is slower, so that a special dose distribution in the scanning direction can be produced, and the scan rate profile is as shown in the rate curve VQ1 of FIG. In one embodiment, the ion beam distribution is perpendicular to the rate of change scanning direction, so that the dose distribution in the vertical scanning direction can also exhibit the desired result. Following the above description, in another embodiment, the ion beam distribution provided by the method may not be single, for example, after a uniform ion beam is scanned at a variable rate, and then the ion beam concentration distribution is changed to scan at an equal rate. The result is equivalent to changing the ion beam concentration plus the result of the variable rate scan. Therefore, the ion beam concentration distribution and the rate scan curve are not limited to a single combination, and may be a combination of two or more. In addition, the scan rate curve can also be asymmetric, such as the rate curve VG2 in Figure 5, the asymmetric scan rate only needs to be the same in the process of implantation, 9 200905734 force _ rotation (four) Xiaodu minus m rate curve .冉 can also be achieved with symmetry speed. Next, please refer to Figure 6, the 6 m & _ rate scan rate curve. In the fourth embodiment, the shifting dose is required to be changed in the dose distribution. The turtle according to the dry matter concentration distribution changes each single woman = and the predetermined ion dose distribution according to the example is taken as an example. After that, the rate is slowed down, and the heart center, := beamlet time is closer to the effect of 2 doses as shown in Fig. 4, and the monthly rate of the fifth embodiment can be reached. Fig. 7 is a schematic diagram showing the rate curve of each of the CAS in the present invention. In the fifth embodiment
也依據所需劑量分布而做J 且每-次單描c速率依舊維持在，，快慢快，，的行為， 劑量的平均速率隨著劑量分布做調整，當高 =時料低平均速率；反之增加。於第三實施例、第 子植1二與=實施例中，因不需轉動乾材，故可減少離 子植入所化費的時間以改善生產效能。 元件中^*丨旦例中’更包括調整乾材之垂直轴角度以控制 為零°於上述實施例中’若離子植入之角度不 1 ^/直入之方向不與轉動軸方向平行），並且使用 ^二/度分布之離子束時，其與垂直軸的角度（即傾斜 ti t angl:)需配合不同的乾材轉動角度_以抓㈣作正向 ^負向的6周整。其詳細說明如下，請搭配參考第8A圖、 弟8B圖、第gp固 圖及第8D圖，其中第8A圖為革巴材1〇四個 200905734 角度的轉動正視示意圖；第8Β圖為_預定植入圖案側視干 意圖；第8C圖及第8D圖分別為乾材ι〇轉動〇度與i❹ 時不同傾斜肖度的側視圖。假設把材1()上欲植人圖案如= 8B圖所不，當進行離子植人，1始轉動角度為Q度時 調整把材10的垂直軸30角度D為+9度進行植入，如第叱 圖所不其中，圖式中革巴材1〇預定圖案内”點”的密度表示 子植入的劑量。接著，當轉動角度變化，傾斜角也跟著不同， 如第8D圖所示，當轉動角度為18〇度時，此時角度β調整 為-Θ度以保持對每個欲植人圖㈣植人方向相同，如此 不會造成如第8E圖所示之植入圖案偏移的情況發生。 整方法適用於上述所有需轉動輕材的實施例，因乾材上之 件為立體結構，利用不同轉動角度而調整傾斜角度可控制元 件t之劑量分布以提高元件之良率。 第9圖所示為根據本發明調整離子束掃描速率之方法一 實施例之步驟流程圖。此調整離子束掃描速率之方法係用於 將一離子束中之複數離子植人-㈣㈣叫，於—實施例 中，靶材可以是晶圓(wafer”而離子束可以是濃度非均勾分 布之離子束(n〇n-uniform ion beam)。其中調整離子植二 分布方法，如圖所示，首先’讀取離子束濃产八 /又 profile)(S10);接著，讀取靶枯斛 又刀（10n eam 考靖取粑材所需植入離 (S20);再來，計算離子束之—掃描迷率 農度刀布 pr〇fue)(S30)。於-實施例中，掃描速率曲線之(⑽ty 出之離子权濃度分布與崎所需植场量所讀 運算而得。此時，離子束即可依照朴瞀 里之濃度为布經由 離子植入動作。 v之帝描迷率曲線對靶材進行 接續上述說明’於—實施例中，計 包括判斷所計算出之掃描速率曲線是否厂出輙描速率後，更 描速率曲線是否落入一有效區 可用，其係判斷此掃 ]值内（S40)。倘若所計算出之 11 200905734 掃描速率曲線超出有效區間值，則更包括一調整步驟（S50)， 用以調整離子束之濃度分布。於一實施例中，調整步驟係微 調離子束濃度分布，其後，重複步驟S10、S20及S30，重新 計算離子束掃描速率後以進行離子植入作業。 下列即將此調整離子束掃描速率之方法應用於一離子 植入方法上做一說明。 第10圖所示為根據本發明離子植入方法第六實施例之 步驟流程圖。如圖所示，首先，提供一離子束（S60)，其中離 子束中含有複數離子，於一實施例中，離子束可以是一濃度 非均勻分布之離子束，意即，離子束之濃度可以是只經過粗 略調整，距離目標值之誤差值約略在正、負百分之三十左右 之離子束即可，然，可以理解的，依據不同的機器控制，誤 差值亦會有所不同，其並不限於百分之三十；接著，進行一 調整離子束掃描速率步驟，此步驟包括：取得離子束之濃度 分布（S10);取得靶材所需植入離子之濃度分布（S20);以及， 計算離子束之一掃描束率曲線(S30);最後，將離子束中之離 子依掃描速率曲線植入靶材（S70)。於一實施例中，掃描速率曲 線之計算係針對所讀出之離子束之濃度分布與靶材所需植入離 子數量之濃度分布經由運算而得。 接續上述說明，在離子植入靶材前，更包括判斷計算出 之掃描速率曲線是否落入一有效區間值内（S40)。於一實施例 中，倘若掃描速率曲線超出有效區間，則更包括一調整步驟， 用以調整離子束之濃度分布（S50)。於一實施例中，調整步驟 係微調離子束濃度分布，其後，重複步驟S10、S20及S30， 重新計算出離子束掃描速率後以進行離子植入作業。於此實 施例中，當離子植入時，需旋轉靶材以達到離子劑量濃度分 布不均勻的需求及達到符合不同預定劑量分布之效果。 12 200905734 $於此實施例中，由於一開始所提供之離子束不需要是離 子展度73布非常均勻之離子束，故在離子植人裝置產生離子 f時，可有效縮短離子束製作時間。一般來說，為產生離子 浪度均勻分布之離子料，其距離均勾度目標值之誤差值需 ’、寺在負百为之五内，故對濃度分布調校的時間上而言， 相對於-般不需要均勾分布的離子束所花費的時間是要來的 長的多’操作技術上也較難控制。惟，此處此實施例中只需 提供距離均勻度目標值之誤差值在正、負百分之三十内之離 4 J·束~ a可利用本發明之調整離子束掃描速率的方法，對革巴 進行-有預定圖案之非均勾劑量分布的離子植入。 接續上述說明， 入方法之作一比較。 以下即針對習知技術與本發明之離子植 。月爹哼第4 第UC圖、第11D圖^ A圖(習知技術)、第11B圖（習知技術）、 需植入離子劑量分布 E圖’第4 ®為—實施例之預定把材所 及第11E SIMM ，第11A圖、第11B圖、第11C圖、第11D圖 上所=:子=所呈現的劑量分布圖。其中，第 劑量分布而產生不同 勾離子束依據乾材所需植入離子 UC圖、第I1D圖及苐田E又/法所形成的劑量分布圖，·最後，第 的劑量分布圖。由比較第用本發明之離子植入方法所產生 第UC圖、第11D第技術）、第1W圖（習知技術）、 所產生之結果(第！弟圖可知，依照本發明之離子植入方法 圖射之預定乾材所^離句量圖之及=_，皆更點近如第4 量分布，可以係提供-特定的不均勻劑 效果以達—電子， J3 200905734 量的分布不限於任何幾何圖形的分布，例如可以是多邊形。 另，可以理解的是，上述方法可以於任何通用電腦系統或其 他裝置上完成；此外，亦可應用於具有特殊硬體設備之電腦 系統。更甚者，此種離子植入方法亦可被實作為複數程式並 被儲存於任何電子裝置可讀取之儲存媒體中，藉由電子裝置 載入、執行程式完成上述離子植入方法，其中電子裝置可以 是電腦，且程式不限於任何表現方式與任何程式語言。 綜合上述，本發明係提供一種離子植入方法，利用製造 特殊的N型或P型參雜劑量分布以補償晶圓在前置作業製程 中如微影、蝕刻所造成元件幾何尺寸不均勻而導致晶圓内元 件臨界電壓分布不均。且，本發明之離子植入方法不需同時 以變速度掃描加上轉動靶材即可達到特殊劑量離子分布之效 果。又，因為不需要提供均勻離子束，可有效減少離子束濃 度分布的調校時間，不僅如此，亦可減少製程所需時間，進 而提高產能。此外，利用離子束濃度分布與靶材所需離子濃 度分布之關係計算出離子束掃描速率，可使離子植入效果良 好0 以上所述之實施例僅係為說明本發明之技術思想及特 點，其目的在使熟習此項技藝之人士能夠瞭解本發明之内容 並據以實施，當不能以之限定本發明之專利範圍，即大凡依 本發明所揭示之精神所作之均等變化或修飾，仍應涵蓋在本 發明之專利範圍内。 【圖式簡單說明】 第1圖所示為根據本發明之離子植入方法第一實施例之離 子濃度分布圖。 14 200905734 第2圖所示為根據本發明之離子植入方法第一實施例之靶 材、轉動軸與垂直轴的側視示意圖。 第3A圖與第3B圖所示為根據本發明之離子植入方法第二 實施例之革巴材、轉動轴與垂直軸的示意圖。 第4圖所示為圓帽型預定靶材所需植入離子劑量分布。 第5圖所示為根據本發明之離子植入方法第三實施例之掃 描速率曲線分布圖。 第6圖所示為根據本發明之離子植入方法第四實施例之變 速率掃描之速率曲線示意圖。 第7圖所示為根據本發明之離子植入方法第五實施例之變 速率掃描之速率曲線示意圖。 第8A圖、第8B圖、第8C圖及第8D圖所示為根據本發明 之離子植入方法一實施例之靶材傾斜角度示意圖。 第8E圖所示為習知離子植入圖案偏移示意圖。 第9圖所示為根據本發明調整離子束掃描速率之方法一實 施例之步驟流程圖。 第10圖所示為根據本發明離子植入方法第六實施例之步驟 流程圖。 第11A圖所示係為習知離子束依據線性等速掃描所形成的劑量分 布圖。 第11B圖所示係為習知非等速掃描所形成的劑量分布圖。 第11C圖所示係為本發明第一實施例之離子植入方法所產生的劑 量分布圖。 第11D圖所示係為本發明三實施例之離子植入方法所產生的劑量 15 200905734 分布圖。 第11E圖所示係為本發明第五實施例之離子植入方法所產生的劑 量分布圖。 【主要元件符號說明】 10 靶材 20 轉動軸 30 垂直軸 Β〇ι, B〇2, B〇3, B〇4 濃度曲線 V〇], V〇2 速率曲線 A,B 方向 C 單一掃描 D 角度 Savg 平均速率 S10 取得離子束濃度分布 S20 取得靶材所需植入離子之濃度分布 S30 計算離子束之一掃描速率曲線 S40 判斷上述掃描速率曲線 S50 調整步驟 S60 提供一離子束 S70 將離子束之離子依上述掃描速率曲線植入 靶材 16J is also based on the required dose distribution and the rate of each c-spin is still maintained, fast, slow, and the average rate of dose is adjusted with the dose distribution, when high = the low average rate; increase. In the third embodiment, the first embodiment, and the second embodiment, since the dry material is not required to be rotated, the time for ion implantation can be reduced to improve the production efficiency. In the example of the component, the angle of the vertical axis of the dry material is adjusted to be zero. In the above embodiment, if the angle of the ion implantation is not 1 ^ / the direction of the straight line is not parallel to the direction of the rotation axis, And when using the ion beam of the ^2/degree distribution, the angle with the vertical axis (ie, the tilt ti t angl:) needs to match the different angles of rotation of the dry material _ to grasp (4) for the positive and negative 6 weeks. The detailed description is as follows, please refer to the 8A, 8B, gp and 8D drawings, wherein the 8A is a schematic view of the rotation of the head of the four materials of the 200905734 angle; the eighth picture is _ scheduled The implant pattern has a side view dry intention; the 8C and 8D maps are side views of the different tilt angles of the dry material 〇 〇 rotation 与 and i 分别 , respectively. Assume that the material on the material 1() is not as shown in Fig. 8B. When ion implantation is performed, when the initial rotation angle is Q degree, the vertical axis 30 of the material 10 is adjusted to an angle D of +9 degrees for implantation. As shown in the figure, the density of the "point" in the predetermined pattern of the leather material in the figure indicates the dose of the sub-implant. Then, when the angle of rotation changes, the angle of inclination is also different. As shown in Fig. 8D, when the angle of rotation is 18 degrees, the angle β is adjusted to -Θ to maintain the image of each person (4). The directions are the same, so that the implantation pattern shift as shown in Fig. 8E does not occur. The whole method is applicable to all the above embodiments for rotating the light material. Since the parts on the dry material are three-dimensional structures, adjusting the inclination angle by using different rotation angles can control the dose distribution of the element t to improve the component yield. Figure 9 is a flow chart showing the steps of an embodiment of a method for adjusting the ion beam scanning rate in accordance with the present invention. The method of adjusting the ion beam scanning rate is used to implant a plurality of ions in an ion beam - (four) (four). In the embodiment, the target may be a wafer and the ion beam may be a non-uniform concentration distribution. An ion beam (n〇n-uniform ion beam) in which the ion implantation pattern is adjusted, as shown in the figure, first, 'reading the ion beam to produce an eight-and-profile profile' (S10); And the knife (10n eam is taken to take the coffin required to be implanted (S20); then, calculate the ion beam - scan the rate of the agricultural knife cloth pr〇fue) (S30). In the embodiment, the scanning rate The curve ((10)ty is obtained from the ion concentration distribution and the required planting amount. The ion beam can be ion-implanted according to the concentration of Park Seri. The curve is connected to the target. In the embodiment, the method includes determining whether the calculated scan rate curve is a scan rate, and whether the rate curve is available in an effective area. ] Within the value (S40). If the calculated 11 200905734 scan rate curve is exceeded The effective interval value further includes an adjusting step (S50) for adjusting the concentration distribution of the ion beam. In an embodiment, the adjusting step is to finely adjust the ion beam concentration distribution, and then repeating steps S10, S20 and S30, The ion beam scanning rate is recalculated for ion implantation. The following method for adjusting the ion beam scanning rate is applied to an ion implantation method. Fig. 10 is a diagram showing the ion implantation method according to the present invention. A flow chart of the steps of the six embodiments. As shown, first, an ion beam (S60) is provided, wherein the ion beam contains a plurality of ions. In an embodiment, the ion beam may be a non-uniformly distributed ion beam. That is to say, the concentration of the ion beam can be an ion beam that is only roughly adjusted, and the error value from the target value is about 30% positive and negative, respectively. However, it can be understood that the error is controlled according to different machines. The value will also be different, which is not limited to 30%; then, an adjustment ion beam scanning rate step is performed, the step includes: obtaining the concentration of the ion beam (S10); obtaining a concentration distribution of the implanted ions required for the target (S20); and calculating a scanning beam rate curve of one of the ion beams (S30); finally, implanting ions in the ion beam into the target according to a scan rate curve (S70) In an embodiment, the scan rate curve is calculated by calculating the concentration distribution of the ion beam to be read and the concentration of the implanted ions required for the target. Before entering the target, further comprising determining whether the calculated scan rate curve falls within a valid interval value (S40). In an embodiment, if the scan rate curve exceeds the effective interval, an adjustment step is further included for adjusting The concentration distribution of the ion beam (S50). In one embodiment, the adjusting step is to fine tune the ion beam concentration distribution, and thereafter, steps S10, S20, and S30 are repeated to recalculate the ion beam scanning rate for ion implantation. In this embodiment, when the ions are implanted, the target needs to be rotated to achieve the uneven distribution of the ion dose concentration and achieve the effect of meeting different predetermined dose distributions. 12 200905734 In this embodiment, since the ion beam provided at the beginning does not need to be a very uniform ion beam with an ion spread of 73, the ion beam fabrication time can be effectively shortened when the ion implantation device generates ions f. Generally speaking, in order to generate an ion material with uniform distribution of ion waves, the error value of the target value of the distance is required to be ', and the temple is within five minus, so the time for adjusting the concentration distribution is relatively The time it takes for the ion beam to be uniformly distributed is generally long and difficult to control. However, in this embodiment, the error value of the target value of the distance uniformity is only required to be within 4% of the positive and negative percentages, and the method of adjusting the ion beam scanning rate of the present invention can be utilized. For Geba - ion implantation with a non-uniform dose distribution of a predetermined pattern. Following the above description, the method of comparison is made. The ion implants of the prior art and the present invention are as follows. 4th UC diagram, 11D diagram ^ A diagram (known technique), 11B diagram (known technique), implanted ion dose distribution E map '4th - is the predetermined material of the embodiment And 11E SIMM, 11A, 11B, 11C, 11D, =: sub = the dose distribution presented. Among them, the first dose distribution produces a different dose of the hook ion beam according to the required implanted ion UC map, the first 1D map and the Putian E / method, and finally, the first dose distribution map. By comparing the first UC diagram, the 11th technique, the 1st diagram (the prior art) generated by the ion implantation method of the present invention, the result produced (the second embodiment of the invention, the ion implantation according to the present invention is known The method of shooting the predetermined dry material is the same as the sum of the sentence graph = _, which is closer to the fourth quantity distribution, and can provide a specific unevenness effect to reach - electron, the distribution of J3 200905734 is not limited The distribution of any geometric figure can be, for example, a polygon. In addition, it can be understood that the above method can be implemented on any general-purpose computer system or other device; in addition, it can also be applied to a computer system with a special hardware device. The ion implantation method can also be implemented as a complex program and stored in a storage medium readable by any electronic device. The ion implantation method can be completed by loading and executing a program by the electronic device, wherein the electronic device can be Computer, and the program is not limited to any expression and any programming language. In summary, the present invention provides an ion implantation method for manufacturing a special N-type or P-type dopant. The distribution is to compensate for the uneven distribution of the critical voltage of the components in the wafer during the pre-operation process, such as lithography and etching, and the ion implantation method of the present invention does not need to change at the same time. The scanning and rotating target can achieve the effect of special dose ion distribution. Moreover, since it is not necessary to provide a uniform ion beam, the adjustment time of the ion beam concentration distribution can be effectively reduced, and the time required for the process can be reduced. In addition, the ion beam scanning rate is calculated by using the relationship between the ion beam concentration distribution and the desired ion concentration distribution of the target, and the ion implantation effect is good. The above embodiments are merely illustrative of the technical idea of the present invention. And the purpose of the present invention is to enable those skilled in the art to understand the present invention and to implement the invention, and the scope of the invention is not limited thereto, that is, the equivalent changes or modifications made in accordance with the spirit of the present invention. It should still be covered by the patent of the present invention. [Simplified description of the drawings] Figure 1 shows the departure according to the present invention. Sub-implantation method The ion concentration profile of the first embodiment. 14 200905734 Figure 2 is a side view showing the target, the rotating shaft and the vertical axis of the first embodiment of the ion implantation method according to the present invention. Figure 3 and Figure 3B are schematic views showing the leather material, the rotating shaft and the vertical axis of the second embodiment of the ion implantation method according to the present invention. Fig. 4 is a view showing the implantation of ions required for the dome-shaped predetermined target. Dose distribution. Fig. 5 is a scanning rate curve distribution diagram of a third embodiment of the ion implantation method according to the present invention. Fig. 6 is a diagram showing a variable rate scanning of the fourth embodiment of the ion implantation method according to the present invention. Schematic diagram of the rate curve. Fig. 7 is a graph showing the rate curve of the variable rate scanning according to the fifth embodiment of the ion implantation method of the present invention. Figs. 8A, 8B, 8C and 8D are A schematic diagram of the tilt angle of the target according to an embodiment of the ion implantation method of the present invention. Figure 8E shows a schematic diagram of a conventional ion implantation pattern shift. Figure 9 is a flow chart showing the steps of a method for adjusting the ion beam scanning rate in accordance with the present invention. Fig. 10 is a flow chart showing the steps of the sixth embodiment of the ion implantation method according to the present invention. Figure 11A is a diagram showing the dose distribution of a conventional ion beam according to linear constant velocity scanning. Figure 11B shows the dose profile formed by conventional non-constant scanning. Fig. 11C is a diagram showing the distribution of the dose produced by the ion implantation method of the first embodiment of the present invention. Figure 11D is a distribution diagram of the dose 15 200905734 produced by the ion implantation method of the third embodiment of the present invention. Fig. 11E is a diagram showing the distribution of the dose produced by the ion implantation method of the fifth embodiment of the present invention. [Main component symbol description] 10 Target 20 Rotary axis 30 Vertical axis Β〇ι, B〇2, B〇3, B〇4 Concentration curve V〇], V〇2 Rate curve A, B direction C Single scan D angle Savg average rate S10 Obtain ion beam concentration distribution S20 Obtain the concentration distribution of implanted ions required for the target S30 Calculate one of the ion beam scan rate curves S40 Determine the above scan rate curve S50 Adjust step S60 Provide an ion beam S70 Ion beam ion Implanting the target 16 according to the above scan rate curve