200904511 九、發明說明 【發明所屬之技術領域】 本發明係關於一種將由半導體製造裝置所排出之對人 體或環境有害的半導體排氣進行熱氧化分解而予以無害化 的半導體排氣處理裝置。 【先前技術】 在半導體製造裝置中，係使用各種種類的氟化合物（ fluorine compound)的氣體（gas)作爲清洗氣體（ cleaning gas)或鈾刻氣體（etching gas)等。如上所述 的氟化合物係被稱爲「PFCs (全氟化合物（。6^丨11〇1'〇-compounds ))」，以其代表而言，列舉如全氟碳化物（ per fluorocarbon)(例如 CF4、C2F6、C3F8、C4F8、C5F8 等）、氫氟碳化物（hydro fluorocarbon)(例如CHF3等 )以及無機含氟化合物（例如SF6或NF3等）等。 接著，在半導體製造裝置中所使用的各種種類的 PFCs係與作爲載體氣體（carrier gas )或淨化氣體（ purge gas)等所使用的氮（N2)或氬（Ar)、或作爲添 加氣體所使用的氧（〇2 )、氫（H2 )、氨（NH3 )、甲烷 (ch4)等一起作爲半導體排氣而予以排出。 在此，與氮（N2 )或氬（Ar )等其他氣體相比較， PFCs在半導體排氣中所佔比例非常小，但與二氧化碳（ C02 )相比較，該PFCs的地球暖化係數（GWP )非常大 ，爲數千至數萬倍，與C02相比較，大氣壽命亦較長，爲 -4- 200904511 數千至數萬年，因而即使在少量排出至大氣中的情形下’ 其影響亦非常大。此外，已知以CF4或C2F6爲代表的全 氟碳化物由於C-F鍵結穩定（鍵結能（bond energy )很 大，爲130kcal/mol )，因而分解不容易。因此，由半導 體排氣中將已使用完畢的PFCs予以除害的各種技術已在 開發中。 以將含有如上所示之難分解性的PFCs的半導體排氣 予以除害的技術而言，例如在日本專利申請公開公報特開 2007-69201號公報已揭示一種所謂燃燒濕洗（burn wet) 方式的半導體排氣處理裝置，其包括：以火焰使半導體排 氣燃燒的燃燒器（burner );與燃燒器相結合而使因半導 體排氣燃燒所產生的微塵（particle )落下的燃燒腔室（ chamber );設在燃燒腔室的一側，利用水來吸附由燃燒 腔室所送來的微塵並使其落下，且將經過濾的氣體排出至 外部的濕式塔（wet tower );以及利用水來捕集由燃燒 腔室及濕式塔落下的微塵的水槽（water tank)。 在該燃燒濕洗方式的半導體排氣處理裝置中，係可藉 由高溫火焰（flame )，將半導體排氣中的PFCs，尤其全 氟碳化物等難分解性成分予以分解並除害。 【發明內容】 (發明所欲解決之課題） 然而，在如上所示之燃燒濕洗方式的半導體排氣處理 裝置中’會有以下問題發生。亦即，爲了確實使半導體排 -5- 200904511 氣燃燒而提升除害效率’必須提高半導體排氣與高溫火焰 的接觸效率，因而必須將供給至燃燒器的半導體排氣的供 給路徑形成爲細且複雜的形狀。如此一來，當在半導體排 氣中含有粉塵等時，該粉塵堆積在前述供給路徑而將其閉 塞的結果，會有發生無法進行半導體排氣之燃燒處理的問 題發生之虞。 此外，當在半導體排氣中含有如氫（H2)般的可燃性 氣體時，有可能發生逆火現象（亦即朝向作爲半導體排氣 之排出源的半導體製造裝置而使火焰因氫的燃燒而傳播的 現象）或爆炸，非常危險。 此外，由半導體製造裝置排出的半導體排氣的種類或 量若恆爲一定，即無任何問題，但是當由半導體製造裝置 間歇性排出半導體排氣時，會有半導體排氣處理裝置內部 的壓力發生變化，且該變化會對半導體製造裝置造成不良 影響的問題。此外，如上所示由半導體製造裝置間歇性排 出半導體排氣時或排出種類不同的半導體排氣時，燃燒器 的火焰不穩定而在火焰消失，或在假設火焰未消失的情形 下，燃燒腔室內部的溫度會不穩定，而亦會有難以確實分 解半導體排氣的問題。 接著，通過濕式塔而排出至大氣中的氣體的濕度較高 ，因此會在與大氣中相通的排氣導管（exhaust duct)內 產生結露，因該結露而使該排氣導管發生腐蝕或發生黏泥 (slime )。因此，必須頻繁進行包括排氣導管之大規模 的維修（maintenance)，而亦會有難以提升半導體排氣 200904511 處理裝置的運轉效率，甚至半導體之生產效率的問題。 因此，本發明之主要課題在提供一種可有效、安全且 確實地將含有PFCs的半導體排氣分解並予以無害化的半 導體排氣處理裝置。 (解決課題之手段） 申請專利範圍第1項記載的發明係一種半導體排氣處 理裝置10，係具備：「濕式入口洗氣器（inlet scrubber )12，透過入口導管 22與半導體製造裝置之腔室（ chamber)相連接，利用由噴霧噴嘴（spray nozzle) 12b 所噴射的水W來洗淨由該腔室所排出的半導體排氣χ ; 反應爐14，利用電熱加熱器（electrical heater) 34的熱 ，將經入口洗氣器1 2予以水洗後的半導體排氣X進行分 解處理；濕式出口洗氣器（outlet scrubber) 16，將由反 應爐14予以熱氧化分解之處理完畢的半導體排氣X進行 水洗/冷卻；以及排氣風扇（exhaust fan) 18，安裝在出 口洗氣器16之氣體流通方向下游端部，且將半導體排氣 X進行抽吸/排氣」。 在該發明中，由於先利用入口洗氣器12將由半導體 製造裝置之腔室所排出的半導體排氣X予以水洗，因此 可由該排氣X中將粉塵及水溶性氣體去除。 此外，該入口洗氣器12由於充滿由噴霧噴嘴12b所 噴出的水W，因此即使在後述之反應爐14內氫等可燃性 成分燃燒而發生火焰，亦無須擔心火焰會朝向該入口洗氣 200904511 器1 2之更爲上游側，亦即朝向半導體製造裝置傳播。 此外，經入口洗氣器1 2予以水洗後的半導體排氣X 雖在含水分的狀態下導入高溫的反應爐14 ’但由於在本 發明之半導體排氣處理裝置10中係使用電熱加熱器34作 爲反應爐14的熱源，因此並不會如燃燒器般發生火焰消 失而使爐內溫度急遽降低的問題。此外，藉由如上所示將 含水分狀態的半導體排氣X導入反應爐1 4，利用源自前 述水分的氫將NF3的反應產生物且造成惡臭原因的氟（F2 )轉換成HF之後，可利用後述之出口洗氣器1 6使其吸 附水而由半導體排氣X中去除。因此，與無法將氟（F2 ) 除害而直接釋出至大氣中的燃燒濕洗（burn wet )方式不 同，可解決因氟（F2 )所造成之惡臭的問題。 此外，不會如使用火焰的燃燒濕洗方式般發生反應爐 1 4內的溫度過度上升的情形。因此，即使在進行熱氧化 分解的半導體排氣X含有大量氮（N2 )的情形下，亦無 須擔心會衍生有害熱NOx( thermal NOx)(氮氧化物） 〇 接著，由於利用出口洗氣器1 6將在反應爐1 4內予以 熱氧化分解的半導體排氣X進行水洗/冷卻之後再排出 至大氣中，因此可去除在進行半導體排氣X的熱氧化分 解時所產生的粉塵或水溶性成分，且可在更爲清淨的狀態 下將經除害處理的半導體排氣X排出至大氣中。在此， 在燃燒濕洗方式中，由於係利用燃燒器產生火焰，因此必 須有燃料氣體與燃燒用空氣。因此，利用出口洗氣器進行 -8- 200904511 處理的氣體量會增加。若如上所示利用出口洗氣器進行處 理的氣體量增加，而欲將裝置內維持在一定的減壓狀態時 ，必須提升排氣風扇的能力而增加所排出氣體的量。如此 一來，由出口洗氣器帶出至排氣導管的水分會變多，而容 易在排氣導管內產生結露。相對於此，在本發明裝置1〇 中，由於不需要燃料氣體與燃燒用空氣，因此由出口洗氣 器1 6帶出的水分較少，而難以在排氣導管內發生結露。 申請專利範圍第2項記載的發明係在如申請專利範圍 第1項記載的半導體排氣處理裝置1 0中「設有排氣風扇 控制手段（exhaust fan control means ) 50，係構成爲包含 :壓力計（Pressure gauge ) 44，用以測定入口導管（ inlet duct) 22內的壓力；以及變頻器（inverter) 48，根 據由壓力計4 4所測定的壓力來控制排氣風扇1 8之旋轉數 」’藉此可將入口導管2 2內的壓力控制在一定的減壓狀 態，且可藉由入口導管22內的壓力變動而防止半導體製 造裝置受到不良影響。此外，當使用排氣風扇控制手段 5〇而以使入口導管22內的壓力成爲一定之減壓狀態的方 式進行控制時，在半導體排氣處理裝置1 0內流通的氣體 的流速會改變。本發明之半導體排氣處理裝置1 0由於使 用電熱加熱器34作爲熱源，因此即使在如上所示的情形 下’亦不會發生如燃燒濕洗方式般因火焰消失等而使反應 爐14內部的溫度不穩定，而可確實地將半導體排氣X進 行熱氧化分解。 申請專利範圍第3項記載的發明係在如申請專利範圍 -9- 200904511 第1項或第2項記載的半導體排氣處理裝置中，「在排氣 風扇18的吸入口附近設置外氣導入配管52，其對已通過 出口洗氣器16之處理完畢的半導體排氣X施加外氣（ fresh air) A，以降低該氣體X中的濕度」，藉此可降低 透過排氣風扇18而排出至大氣中之處理完畢之半導體排 氣X的濕度，而可預防在排氣風扇1 8以後之該氣體流通 路徑（例如排氣導管等）產生結露而發生問題（trouble ) 〇。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 [Prior Art] In the semiconductor manufacturing apparatus, gases of various kinds of fluorine compounds are used as a cleaning gas or an etching gas. The fluorine compounds as described above are referred to as "PFCs (perfluoro compounds ((6^丨11〇1'〇-compounds))", and by way of example, such as perfluorocarbons (for example, per fluorocarbon) CF4, C2F6, C3F8, C4F8, C5F8, etc.), hydrofluorocarbons (such as CHF3, etc.), and inorganic fluorine-containing compounds (such as SF6 or NF3). Next, various types of PFCs used in a semiconductor manufacturing apparatus are used as nitrogen (N2) or argon (Ar) used as a carrier gas, a purge gas, or the like, or as an additive gas. Oxygen (〇2), hydrogen (H2), ammonia (NH3), methane (ch4), and the like are discharged together as a semiconductor exhaust gas. Here, compared with other gases such as nitrogen (N2) or argon (Ar), the proportion of PFCs in the semiconductor exhaust gas is very small, but the global warming coefficient (GWP) of the PFCs is compared with carbon dioxide (C02). Very large, thousands to tens of thousands of times, compared with C02, the atmospheric life is also longer, -4-200904511 thousands to tens of thousands of years, so even in the case of a small amount of discharge into the atmosphere, its impact is very Big. Further, it is known that perfluorocarbons typified by CF4 or C2F6 are not easily decomposed due to stable C-F bonding (a large bond energy of 130 kcal/mol). Therefore, various techniques for detoxifying used PFCs from semi-conductor exhaust have been under development. In the technique of detoxifying a semiconductor exhaust gas containing a PFCs which are hardly decomposable as shown above, a so-called burn wet method has been disclosed, for example, in Japanese Laid-Open Patent Publication No. 2007-69201. a semiconductor exhaust gas treatment device comprising: a burner that burns a semiconductor exhaust gas by a flame; and a combustion chamber that combines with the burner to drop fine particles generated by combustion of the semiconductor exhaust gas (chamber) Provided on one side of the combustion chamber, using water to adsorb the fine dust sent from the combustion chamber and dropping it, and discharging the filtered gas to an external wet tower; and utilizing water To capture the water tank of the dust that falls from the combustion chamber and the wet tower. In the semiconductor exhaust gas treatment apparatus of the combustion wet cleaning method, PFCs in the semiconductor exhaust gas, particularly hardly decomposable components such as perfluorocarbons, can be decomposed and detoxified by a high temperature flame. SUMMARY OF THE INVENTION (Problems to be Solved by the Invention) However, in the semiconductor exhaust gas treatment apparatus of the combustion wet cleaning method as described above, the following problems occur. That is, in order to surely improve the efficiency of decontamination by burning the semiconductor row-5-200904511 gas, it is necessary to increase the contact efficiency of the semiconductor exhaust gas with the high-temperature flame, and therefore it is necessary to form the supply path of the semiconductor exhaust gas supplied to the burner to be fine. Complex shapes. When dust or the like is contained in the semiconductor exhaust gas, the dust accumulates in the supply path and is closed, and as a result, the problem that the semiconductor exhaust gas cannot be burned may occur. Further, when a flammable gas such as hydrogen (H2) is contained in the semiconductor exhaust gas, there is a possibility that a backfire phenomenon (that is, a semiconductor manufacturing apparatus which is a discharge source of the semiconductor exhaust gas causes the flame to be burned by hydrogen) The phenomenon of transmission) or explosion is very dangerous. Further, the type or amount of the semiconductor exhaust gas discharged from the semiconductor manufacturing apparatus is constant, that is, there is no problem, but when the semiconductor exhaust gas is intermittently discharged by the semiconductor manufacturing apparatus, pressure inside the semiconductor exhaust gas processing apparatus occurs. The problem is that the change will adversely affect the semiconductor manufacturing apparatus. Further, when the semiconductor exhaust gas is intermittently discharged from the semiconductor manufacturing apparatus or the semiconductor exhaust gas of a different type is discharged as described above, the flame of the burner is unstable and disappears in the flame, or in the case where the flame is not lost, the combustion chamber is assumed. The temperature of the part will be unstable, and there will be a problem that it is difficult to decompose the semiconductor exhaust gas. Then, since the humidity of the gas discharged to the atmosphere through the wet tower is high, dew condensation occurs in an exhaust duct that communicates with the atmosphere, and the exhaust duct is corroded or generated due to the condensation. Slime. Therefore, large-scale maintenance including an exhaust duct must be frequently performed, and there is a problem that it is difficult to improve the operational efficiency of the semiconductor exhaust gas, and even the production efficiency of the semiconductor. Accordingly, a main object of the present invention is to provide a semiconductor exhaust gas treatment apparatus which can decompose and detoxify semiconductor exhaust gas containing PFCs efficiently, safely and reliably. (Means for Solving the Problem) The invention described in claim 1 is a semiconductor exhaust gas treatment device 10 including a "wet inlet scrubber 12" that penetrates the inlet conduit 22 and the cavity of the semiconductor manufacturing device. The chambers are connected, and the semiconductor exhaust gas discharged from the chamber is washed by the water W sprayed by the spray nozzle 12b; the reaction furnace 14 is made of an electric heater 34. Heat, the semiconductor exhaust X after being washed by the inlet scrubber 12 is subjected to decomposition treatment; the wet scrubber 16 is subjected to thermal oxidation decomposition of the semiconductor exhaust X by the reactor 14 Water washing/cooling is performed; and an exhaust fan 18 is attached to the downstream end portion of the outlet scrubber 16 in the gas flow direction, and the semiconductor exhaust gas X is sucked/exhausted. In the invention, since the semiconductor exhaust gas X discharged from the chamber of the semiconductor manufacturing apparatus is first washed with the inlet scrubber 12, the dust and the water-soluble gas can be removed from the exhaust gas X. Further, since the inlet scrubber 12 is filled with the water W sprayed from the spray nozzle 12b, even if a flame is generated by burning a combustible component such as hydrogen in the reactor 14 to be described later, there is no need to worry that the flame will wash toward the inlet. The more upstream side of the device 12, that is, the device is spread toward the semiconductor manufacturing device. Further, the semiconductor exhaust gas X which has been washed with water by the inlet scrubber 12 is introduced into the high-temperature reactor 14' in a state of containing water, but the electrothermal heater 34 is used in the semiconductor exhaust gas treatment device 10 of the present invention. As the heat source of the reaction furnace 14, there is no problem that the temperature of the furnace is rapidly lowered as the flame disappears like a burner. Further, by introducing the semiconductor exhaust gas X in the water-containing state into the reaction furnace 14 as described above, the reaction product of NF3 and the fluorine (F2) which causes the malodor are converted into HF by hydrogen derived from the aforementioned moisture. The outlet scrubber 16 described later adsorbs water and is removed from the semiconductor exhaust gas X. Therefore, unlike the burn wet method in which fluorine (F2) cannot be detoxified and directly released into the atmosphere, the problem of malodor caused by fluorine (F2) can be solved. Further, the temperature in the reactor 14 is not excessively increased as in the case of the combustion wet cleaning method using a flame. Therefore, even in the case where the semiconductor exhaust gas X subjected to thermal oxidative decomposition contains a large amount of nitrogen (N2), there is no fear of deriving thermal NOx (nitrogen oxide). Next, due to the use of the outlet scrubber 1 (6) The semiconductor exhaust gas X which is thermally oxidatively decomposed in the reaction furnace 14 is washed with water/cooled and then discharged to the atmosphere, so that dust or water-soluble components generated during thermal oxidative decomposition of the semiconductor exhaust gas X can be removed. The sterilized semiconductor exhaust gas X can be discharged to the atmosphere in a cleaner state. Here, in the combustion wet cleaning method, since the flame is generated by the burner, the fuel gas and the combustion air are necessary. Therefore, the amount of gas treated with the outlet scrubber for -8-200904511 will increase. If the amount of gas to be treated by the outlet scrubber is increased as described above, and the inside of the apparatus is to be maintained at a certain decompressed state, the capacity of the exhaust fan must be increased to increase the amount of the exhausted gas. As a result, the amount of moisture carried out by the outlet scrubber to the exhaust duct becomes large, and condensation is easily generated in the exhaust duct. On the other hand, in the apparatus 1 of the present invention, since the fuel gas and the combustion air are not required, the amount of water carried out by the outlet scrubber 16 is small, and it is difficult to cause dew condensation in the exhaust duct. In the semiconductor exhaust gas treatment device 10 according to the first aspect of the invention, the invention provides an exhaust fan control means 50, which includes a pressure. a gauge gauge 44 for measuring the pressure in the inlet duct 22, and an inverter 48 for controlling the number of revolutions of the exhaust fan 18 based on the pressure measured by the pressure gauge 44" Thus, the pressure in the inlet duct 2 2 can be controlled to a certain reduced pressure state, and the semiconductor manufacturing apparatus can be prevented from being adversely affected by the pressure fluctuation in the inlet duct 22. Further, when the exhaust fan control means 5 is used to control the pressure in the inlet duct 22 to a constant pressure-reduced state, the flow velocity of the gas flowing through the semiconductor exhaust gas treatment device 10 changes. Since the semiconductor exhaust gas treatment device 10 of the present invention uses the electrothermal heater 34 as a heat source, even in the case as described above, the inside of the reaction furnace 14 does not occur due to the disappearance of the flame, such as the combustion wet cleaning method. The temperature is unstable, and the semiconductor exhaust gas X can be surely thermally decomposed. In the semiconductor exhaust gas treatment device according to the first or second aspect of the invention, the invention provides an external air introduction pipe in the vicinity of the suction port of the exhaust fan 18. 52, which applies a fresh air A to the semiconductor exhaust X that has been processed by the outlet scrubber 16 to reduce the humidity in the gas X, thereby reducing the discharge to the exhaust fan 18 to The humidity of the processed semiconductor exhaust X in the atmosphere prevents the occurrence of condensation on the gas flow path (for example, an exhaust duct or the like) after the exhaust fan 18 (trouble).
申請專利範圍第4項記載的發明係在如申請專利範圍 第1項之半導體排氣處理裝置10中「設置：排氣風扇控 制手段5 0，構成爲包含：壓力計44，用以測定入口導管 2 2內的壓力、以及變頻器4 8，根據由壓力計4 4所測定的 壓力來控制排氣風扇18之旋轉數；外氣導入配管52’安 裝在排氣風扇18的吸入口附近，對已通過出口洗氣器16 之處理完畢的半導體排氣X施加外氣A，以降低該氣體X 中的濕度；以及外氣調整閥（fresh air control valve) 54 ，安裝在外氣導入配管5 2，按照利用設在出口洗氣器16 之外氣導入配管52連接部與排氣風扇1 8吸入口之間的濕 度感測器（humidity sensor) 56所測定的濕度，調整施加 於處理完畢之半導體排氣X的外氣A的量，且以不會產 生結露的方式進行控制」。 在該發明中，係按照由濕度感測器5 6所測定之處理 完畢的半導體排氣X的濕度而使外氣調整閥5 4進行開閉 動作，且以在排氣風扇1 8以後之氣體流通路徑不會產生 -10- 200904511 結露的方式控制半導體排氣χ的濕度。 在此，使外氣調整閥5 4進行開閉動作，藉此可如上 所述進行半導體排氣X的濕度控制，但半導體排氣處理 裝置10的內壓會改變，而在入口導管22中當然亦會發生 壓力變動。 然而，由於在本發明之半導體排氣處理裝置10設有 排氣風扇控制手段50，因此即使在外氣調整閥54進行開 閉動作而使半導體排氣處理裝置1 0的內壓改變的情形下 ，亦由壓力計44感測該內壓變化，且以使入口導管22內 的壓內爲一定之減壓狀態的方式來控制排氣風扇1 8的旋 轉數。 亦即，藉由排氣風扇控制手段50與外氣調整閥54的 相乘作用，將入口導管22內的壓力保持在一定的減壓狀 態，防止因入口導管22內的壓力變動而使半導體製造裝According to the invention of claim 4, in the semiconductor exhaust gas treatment device 10 of the first aspect of the invention, the exhaust gas control means 50 is provided, and includes a pressure gauge 44 for measuring an inlet duct. The pressure in 2 2 and the inverter 4 8 control the number of rotations of the exhaust fan 18 based on the pressure measured by the pressure gauge 44; the external air introduction pipe 52' is installed near the suction port of the exhaust fan 18, The external air A has been applied to the semiconductor exhaust X that has been processed by the outlet scrubber 16 to reduce the humidity in the gas X; and a fresh air control valve 54 is installed in the external air introduction pipe 52. The humidity is measured by the humidity sensor 56 provided between the connection portion of the gas introduction pipe 52 and the suction port of the exhaust fan 18, which is provided outside the outlet scrubber 16, and is applied to the processed semiconductor row. The amount of the external air A of the gas X is controlled in such a manner that condensation does not occur. In the present invention, the external air regulating valve 54 is opened and closed in accordance with the humidity of the processed semiconductor exhaust X measured by the humidity sensor 56, and the gas is distributed after the exhaust fan 18. The path does not produce a -10-200904511 condensation method to control the humidity of the semiconductor exhaust enthalpy. Here, the external air regulating valve 54 is opened and closed, whereby the humidity control of the semiconductor exhaust gas X can be performed as described above, but the internal pressure of the semiconductor exhaust gas treatment device 10 is changed, and of course, in the inlet duct 22 There will be pressure changes. However, since the exhaust gas control means 50 is provided in the semiconductor exhaust gas treatment device 10 of the present invention, even when the external air regulating valve 54 is opened and closed to change the internal pressure of the semiconductor exhaust gas treatment device 10, The internal pressure change is sensed by the pressure gauge 44, and the number of rotations of the exhaust fan 18 is controlled such that the pressure inside the inlet duct 22 is constant. That is, by the multiplication of the exhaust fan control means 50 and the external air regulating valve 54, the pressure in the inlet duct 22 is maintained at a constant decompression state, and the semiconductor manufacturing is prevented from being caused by the pressure fluctuation in the inlet duct 22. Loading
置受到不良影響，而可經常以一定條件將半導體排氣X 進行熱氧化分解，並且可防止在透過排氣風扇18排出至 大氣中之處理完畢的半導體排氣X的流通路徑產生結露 〇 申請專利範圍第5項記載的發明係在如申請專利範圍 第1項記載的半導體排氣處理裝置10中「在將反應爐14 與出口洗氣器16相連接的分解氣體送給配管40安裝有用 以經常水洗內部的淋洗器（shower ) 60」，藉此可防止因 半導體排氣X的熱氧化分解而產生的粉塵堆積在分解氣 體送給配管40內，或者防止因在半導體排氣X進行熱氧 -11 - 200904511 化分解時所衍生的氟化氫（HF )而使該配管40腐蝕。此 外，可在將由反應爐14予以熱氧化分解之高溫的半導體 排氣X送至出口洗氣器1 6之前預先冷卻’而可使用抑制 耐熱性之廉價品（例如在表面設置耐腐蝕性樹脂被覆膜的 不銹鋼材等）作爲形成該淋洗器60以後之排氣流通路徑 的材料。 申請專利範圍第6項記載的發明係在如申請專利範圍 第1項記載的半導體排氣處理裝置1 〇中「設有：外氣導 入配管52，設在排氣風扇18的吸入口附近；旁通配管（ bypass piping) 64，透過常閉閥62將入口導管22及排氣 風扇18的吸入口附近相連通；以及壓力開關（pressure switch) 42，當入口導管22內的壓力達到預定的上限設 定壓時，將常閉閥62進行開操作」，藉此當因某些原因 而使半導體排氣處理裝置1 0的排氣流通路徑閉塞而使入 口導管22的內壓上升時，使壓力開關42動作而將常閉閥 62進行開操作，而使旁通配管64爲可流通。因此，在作 爲半導體排氣X之發生源的半導體製造裝置因入口導管 22的內壓上升而受到損傷之前，可以使半導體排氣X爲 安全水準（level )的方式一面利用由外氣導入配管52所 導入的外氣A充分稀釋，一面以緊急疏離的方式將該半 導體排氣X排出。 (發明之效果） 根據申請專利範圍第1項之發明，由於先利用入口洗 -12- 200904511 氣器將由半導體製造裝置之腔室所排出的半導體排氣予以 水洗，因此可由該排氣中將粉塵及水溶性氣體去除’並且 可防止因逆火現象或爆炸而使半導體製造裝置受到損傷。 此外，由於使用電熱加熱器作爲反應爐的熱源，因此即使 半導體排氣在含水分的狀態下導入高溫的反應爐’亦不會 發生爐內溫度急遽降低的問題。 根據申請專利範圍第2項之發明，可將入口導管內的 壓力控制在一定的減壓狀態，可防止隨著壓力變動而對半 導體製造裝置造成不良影響，並且可經常以一定條件將半 導體排氣進行熱氧化分解。 根據申請專利範圍第3項之發明，可預防在排氣風扇 以後的該氣體流通路徑產生結露，且可減輕排氣風扇以後 之氣體流通路徑的維修負擔。 根據申請專利範圍第4項之發明，藉由排氣風扇控制 手段與外氣調整閥的相乘作用，可防止因入口導管內的壓 力變動而使半導體製造裝置受到不良影響，可經常以一定 條件將半導體排氣進行熱氧化分解，並且可防止在透過排 氣風扇而排出至大氣中之處理完畢的半導體排氣的流通路 徑產生結露。 根據申請專利範圍第5項之發明，可防止分解氣體送 給配管閉塞或腐蝕而減低維修頻率，並且可使用抑制耐熱 丨生之廉價品作爲形成淋洗器以後之排氣流通路徑的材料。 根據申請專利範圍第6項之發明，即使在因某些原因 而使半導體排氣處理裝置1 〇的排氣流通路徑閉塞的情形 -13- 200904511 下’亦可以使半導體排氣爲安全水準（level)的方式一面 利用外氣充分稀釋，一面以緊急疏離的方式將該半導體排 氣排出。 因此，可提供一種可有效、安全且確實地將含有 PFCs的半導體排氣進行分解而予以無害化的半導體排氣 處理裝置。 【實施方式】 以下按照圖示實施例說明本發明。第1圖係顯示本發 明裝置之流程的槪略圖。如該圖所示，本實施例的半導體 排氣處理裝置10大致上係由入口洗氣器12、反應爐14、 出口洗氣器16、排氣風扇18及水槽（storage tank) 20 等所構成。 入口洗氣器12係用以去除導入反應爐14之半導體排 氣X所含粉塵或水溶性氣體等者，具有：直管型洗氣器 本體12a;以及設置在前述洗氣器本體12a內部的頂部附 近’且將水W或藥液形成噴霧狀予以撒放的噴霧噴嘴i2b 〇 該入口洗氣器12的頂部係透過入口導管22而與工廠 的半導體製造裝置（未圖示）相連結，將由半導體製程所 排出的各種半導體排氣X導入該入口洗氣器12的頂部。 此外’在本實施例中，入口洗氣器12係構成爲：與 水槽2 0分開配設，並且利用水洗氣體供給配管24及排水 管26將兩者相連接而將入口洗氣器12的排水送入水槽 * 14 - 200904511 20，但亦可將該入口洗氣器1 2立設在水槽20上而使內部 彼此直接相連通。 接著，在噴霧噴嘴12b與水槽20之間設置循環水栗 28，將貯留在水槽20內的水W抽吸至噴霧噴嘴12b。 反應爐14係藉由熱氧化分解法將半導體排氣X進行 分解的裝置，由反應爐本體30、氣體供給管材32及電熱 加熱器3 4等所構成。 反應爐本體30係由不銹鋼（SUS )製的圓筒狀外皮 套罩、及由耐火材構成的內襯構件所構成，在內襯構件的 內部形成有排氣分解處理室36。在該反應爐本體30的下 部係開設有氣體排出部3 8，並且連接有將經排氣分解處 理室3 6予以分解處理的半導體排氣X送給至後述之出口 洗氣器16的分解氣體送給配管40。此外，在反應爐本體 3 〇的底部中心係立設有由耐熱性·耐腐蝕性佳的金屬管 材所構成的氣體供給管材32，以由電熱加熱器34圍繞其 周圍的方式配設。 在插入排氣分解處理室3 6的前述氣體供給管材3 2係 連接有水洗氣體供給配管24，其由入口洗氣器12的下端 導出，且將經入口洗氣器1 2予以洗淨後的半導體排氣X 送入氣體供給管材3 2。 電熱加熱器3 4係將排氣分解處理室3 6內加熱而使半 導體排氣X進行熱氧化分解者。以該電熱加熱器34而言 ，係列舉如碳化矽之由中實或中空的棒狀體所形成者。此 外，在電熱加熱器34的端部設有供電部34a，在該供電 -15- 200904511 部34a由未圖示的電源供給電力，而使電熱加熱器34發 熱。 其中，在本實施例之半導體排氣處理裝置10中，係 安裝有用以測定排氣分解處理室36內部溫度的溫度感測 器3 7，根據由該溫度感測器3 7所測定的溫度，來控制供 給至供電部34a的電力。 出口洗氣器16係用以去除在反應爐14內將半導體排 氣X進行熱氧化分解時所衍生的粉塵或水溶性氣體等， 並用將變爲高溫的半導體排氣X予以冷卻者，具有：在 其下端連接有分解氣體送給配管40的直管型洗氣器本體 1 6a ;以及以與半導體排氣X流通方向相對向的方式由上 方噴霧清淨的水（以下稱爲「新水NW」）或藥液的朝下 的噴霧噴嘴16b。 在本實施例中，係將出口洗氣器1 6立設在用以貯留 水W等藥液的水槽20上，且將由噴霧噴嘴16b所噴霧的 新水NW送入水槽20，但亦可將該出口洗氣器1 6與水槽 2 〇分別配設並且利用配管將兩者相連接而將出口洗氣器 1 6的排水送入水槽2 0。 接著’出口洗氣器16的頂部出口係與將處理完畢的 半導體排氣X釋出至大氣中的排氣風扇18相連接。 在此，在本實施例之半導體排氣處理裝置10中係設 有排氣風扇控制手段5 0，其構成爲包含：壓力開關42， 在入口導管22內的壓力到達預定之上限設定壓時將後述 之常閉閥62進行開操作；壓力計44，用以測定入口導管 -16- 200904511 22內的壓力；以及變頻器48，透過配線46與壓力言 相連接，且根據由壓力計4 4所測定的壓力來控制排 扇1 8之旋轉數。 此外，在排氣風扇1 8的吸入口附近設置外氣導 管52，其對已通過出口洗氣器16之處理完畢的半導 氣X施加外氣A，以降低該氣體X中的濕度’藉由 安裝在該外氣導入配管52之外氣調整閥54的開度’ 整導入至排氣風扇18之吸入口附近之外氣A的量。 再者，在出口洗氣器16之外氣導入配管52連接 排氣風扇1 8吸入口之間安裝有用以測定釋出至大氣 處理完畢之半導體排氣X之濕度的濕度感測器56’ 配線5 8將由該濕度感測器5 6所測定的濕度訊號提供 氣調整閥5 4。接著’按照由濕度感測器5 6所測定之 完畢之半導體排氣X的濕度來將外氣調整閥54進行 控制，且以在排氣風扇1 8以後的氣體流通路徑不會 結露的方式將半導體排氣X的濕度進行自動調節。 此外，在將反應爐14與出口洗氣器16相連接的 氣體送給配管4 0的上游側係安裝有用以噴射在其內 用循環水泵28所抽吸的水W的淋洗器60 ° 接著，在排氣風扇18的吸入口附近係安裝有透 閉閥62與入口導管22相連接的旁通配管64。在此 常閉閥62係透過配線47而輸入壓力開關42的訊號 入口導管22內的壓力到達預定的上限設定壓時，將 閉閥6 2進行開操作。 f 44 氣風 入配 體排 調整 以調 部與 中之 透過 至外 處理 開閉 產生 分解 部利 過常 ，在 ，當 該常 -17- 200904511 水槽20係貯留供給至入口洗氣器12或淋洗器60 的水W’而且回收由入口洗氣器12、淋洗器60及出口 氣器1 6等所排出的水W的槽箱（tank )。 在該水槽20由於經常供給由出口洗氣器16之噴霧 嘴1 6b所噴霧的新水NW，因此以不貯留預定量以上之 W的方式使剩餘水溢流而送至排水處理裝置（未圖示） 其中，在除了本實施例之半導體排氣處理裝置1〇 之反應爐14以外的其他部分，爲了保護各部免於受到 導體排氣X所含有或者因該半導體排氣X分解所產生 氫氟酸等腐鈾性成分所造成的腐蝕，而施行藉由氯乙烯 聚乙烯、不飽和聚酯樹脂及含氟樹脂等之耐腐鈾性內襯 lining )或塗佈（coating)。 接著說明本實施例之半導體排氣處理裝置1 〇的作 。由半導體製造裝置排出的半導體排氣X係透過入口 管22而導入入口洗氣器12內，與由噴霧噴嘴12b所散 的霧狀水W相接觸，且將該氣體X中的粉麈與由噴霧 嘴1 2b所散佈的微細液滴相接觸而予以捕捉且被送入水 20。此外，排氣X中的水溶性成分亦與其同時地在水 中予以吸收去除。 由入口洗氣器1 2予以洗淨的低溫濕潤的半導體排 X係透過水洗氣體供給配管24而被送入氣體供給管材 。排氣X係將氣體供給管材3 2上升，在該上升中因周 溫度而加熱’在充分預熱的時間點由氣體供給管材32 前端釋出至排氣分解處理室36內。 等 洗 噴 水 〇 中 半 的 用 導 佈 噴 槽 W 氣 32 圍 的 -18- 200904511 在充分預熱後，由氣體供給管材32的前端釋出至反 應爐本體30內（具體而言係排氣分解處理室36內）的排 氣X係在保持充分高溫的排氣分解處理室36內立即予以 熱氧化分解。 此時’當在半導體排氣X含有氟化合物時，會因半 導體排氣X的熱氧化分解而發生氟（f2)，並且該氟（F2 )與空氣中的氫或水立即反應，而產生劇毒而且極易溶於 水的氟化氫（H F )。 如上所示予以熱氧化分解的半導體排氣X接著係經 由氣體排出部38而被導入分解氣體送給配管40。 在分解氣體送給配管40內安裝有淋洗器60，由於可 直接將水W噴霧在由排氣分解處理室36予以分解之最高 溫且分子運動最活躍之狀態的半導體排氣X，因此半導體 排氣X與水W可以較高機率氣液接觸。亦即可以較高機 率使因半導體排氣X的熱氧化分解而衍生的粉塵或水溶 性成分（例如H F )與水W氣液接觸。因此，可有效地使 粉塵或水溶性成分在水W中溶解/吸收，而可減輕在後 述之出口洗氣器16的排氣處理負荷，並且可防止粉塵等 堆積在分解氣體送給配管40內。此外，可在將由反應爐 14予以熱氧化分解之高溫的半導體排氣X送至出口洗氣 器1 6之前預先冷卻，而可使用抑制耐熱性之廉價品（例 如在表面設置耐腐蝕性樹脂被覆膜的不銹鋼材等）作爲形 成該淋洗器60以後之排氣流通路徑的材料。 其中，由淋洗器60所噴霧的水w係在分解氣體送給 -19- 200904511 配管40流下之後，透過出口洗氣器16的下端部送至水槽 20 ° 接著，藉由淋洗器60有效去除粉塵或水溶性水分而 且予以冷卻的半導體排氣X係被導入出口洗氣器16’且 由出口洗氣器1 6內的下側朝向上側流通。 接著，在出口洗氣器16內’藉由新水NW進行充分 的藥液洗淨與溫度降低，而完成有害成分之除害的處理完 畢的半導體排氣X係利用透過外氣導入配管52所導入的 外氣A使其濕度充分降低後’再藉由排氣風扇18而釋出 至大氣中。 根據本實施例之半導體排氣處理裝置1 〇，先利用入 口洗氣器12將由半導體製造裝置之腔室所排出的半導體 排氣X予以水洗，因此可由該排氣X中將粉塵及水溶性 氣體去除。此外，該入口洗氣器12由於充滿由噴霧噴嘴 1 2b所噴出的水，因此即使在反應爐1 4內氫等可燃性成 分燃燒而發生火焰，亦無須擔心火焰會朝向該入口洗氣器 1 2之更爲上游側，亦即朝向半導體製造裝置傳播。此外 ，經入口洗氣器12予以水洗後的半導體排氣X雖在含水 分的狀態下導入高溫的反應爐14，但由於在本實施例之 半導體排氣處理裝置10中係使用電熱加熱器34作爲反應 爐14的熱源，因此並不會如燃燒器般發生火焰消失而使 爐內溫度急遽降低的問題。此外，藉由如上所示將含水分 狀態的半導體排氣X導入反應爐1 4，利用源自前述水分 的氫將NF3的反應產生物且造成惡臭原因的氟（F2)轉換 -20- 200904511 成H F之後，可利用後述之出口洗氣器1 6使其吸附水而 由半導體排氣X中去除。因此，與無法將氟（F2)除害而 直接釋出至大氣中的燃燒濕洗（burn wet )方式不同’可 解決因氟（F2 )所造成之惡臭的問題。 此外，不會如使用火焰的燃燒濕洗方式般發生反應爐 1 4內的溫度過度上升的情形。因此’即使在進行熱氧化 分解的半導體排氣X含有大量氮（N2)的情形下，亦無 須擔心會衍生有害熱N〇x ( thermal NOx )(氮氧化物） 〇 接著，由於利用出口洗氣器1 6將在反應爐1 4內予以 熱氧化分解的半導體排氣X進行水洗/冷卻之後再排出 至大氣中，因此可去除在進行半導體排氣X的熱氧化分 解時所產生的粉塵或水溶性成分，且可在更爲清淨的狀態 下將經除害處理的半導體排氣X排出至大氣中。在此， 在燃燒濕洗方式中，由於係利用燃燒器產生火焰，因此必 須有燃料氣體與燃燒用空氣。因此，利用出口洗氣器進行 處理的氣體量會增加。若如上所示利用出口洗氣器進行處 理的氣體量增加，而欲將裝置內維持在一定的減壓狀態時 ’必須提升排氣風扇的能力而增加所排出氣體的量。如此 一來，由出口洗氣器帶出至排氣導管的水分會變多，而容 易在排氣導管內產生結露。相對於此，在本發明裝置10 中’由於不需要燃料氣體與燃燒用空氣，因此由出口洗氣 器1 6帶出的水分較少，而難以在排氣導管內發生結露。 此外，由於設有排氣風扇控制手段5 0，因此可將入 -21 - 200904511 口導管22內的壓力控制在一定的減壓狀態，且可藉由入 口導管22內的壓力變動而防止半導體製造裝置受到不良 影響，此外，可將在裝置1 〇內流通的半導體排氣X的流 通速度保持爲一定，而可經常以一定條件將半導體排氣X 進行熱氧化分解。 此外，由於在排氣風扇1 8的吸入口附近設置對已通 過出口洗氣器16之處理完畢的半導體排氣X施加外氣A ，以降低該氣體X中的濕度的外氣導入配管52，因此可 降低透過排氣風扇18而排出至大氣中之處理完畢的半導 體排氣X的濕度，而可預防在排氣風扇1 8以後之氣體流 通路徑產生結露而發生問題（trouble)。 在此，在本實施例之半導體排氣處理裝置10中係在 外氣導入配管52安裝有按照由濕度感測器56所測定的濕 度來調整施加於處理完畢之半導體排氣X的外氣A的量 的外氣調整閥54，使該外氣調整閥54進行開閉動作’以 在排氣風扇18以後之氣體流通路徑不會產生結露的方式 進行控制，但是因外氣調整閥54進行開閉動作’半導體 排氣處理裝置1〇的內壓會改變’而在入口導管22中當然 亦會發生壓力變動。 然而，由於在該半導體排氣處理裝置設有排氣風扇控 制手段5 0，因此即使在外氣調整閥5 4進行開閉動作而使 半導體排氣處理裝置1 〇的內壓改變的情形下’亦由壓力 計4 4感測該內壓變化，且以使入口導管2 2內的壓力差壓 爲一定之減壓狀態的方式來控制排氣風扇1 8的旋轉數。 -22- 200904511 亦即，藉由排氣風扇控制手段5 0與外氣調整閥5 4的 作用，將入口導管22內的壓力保持在一定的減壓狀 防止因入口導管22內的壓力變動而使半導體製造裝 到不良影響，而可經常以一定條件將半導體排氣X 熱氧化分解，並且可防止在透過排氣風扇18而排出 氣中之處理完畢的半導體排氣X的流通路徑產生結露 接著，在本實施例之半導體排氣處理裝置10中 於另外設置安裝有常閉閥62的旁通配管64 ;以及用 常閉閥62進行開操作的壓力開關42，因此當因某些 (例如Si02等的堆積等）而使半導體排氣處理裝置： 排氣流通路徑閉塞而使入口導管22的內壓上升時， 力開關42動作而將常閉閥62進行開操作，而使旁通 64爲可流通。因此，在作爲半導體排氣X之發生源 導體製造裝置因入口導管22的內壓上升而受到損傷 ，可以使半導體排氣X爲安全水準（level)的方式 利用由外氣導入配管52所導入的外氣A充分稀釋， 以緊急疏離的方式將該半導體排氣X排出。 【圖式簡單說明】 第1圖係顯示本發明之半導體排氣處理裝置之流 槪略圖。 【主要元件符號說明】 10:半導體排氣處理裝置 相乘 熊 ， 置受 進行 至大 0 ，由 以將 原因 0的 使壓 配管 的半 之前 一面 一面 程的 -23- 200904511 1 2 :入口洗氣器 12a :洗氣器本體 1 2 b :噴霧噴嘴 14 :反應爐 1 6 :出口洗氣器 1 6 a :洗氣器本體 16b :噴霧噴嘴 1 8 :排氣風扇 2 〇 :水槽 22 :入口導管 24 :水洗氣體供給配管 26 :排水管 2 8 :循環水泵 3 0 :反應爐本體 3 2 :氣體供給管材 3 4 =電熱加熱器 34a :供電部 3 6 :排氣分解處理室 3 7 :溫度感測器 3 8 :氣體排出部 40 :分解氣體送給配管 4 2 :壓力開關 44 :壓力計 46 :配線 -24 200904511 4 7 ·配線 48 :變頻器 5 0 :排氣風扇控制手段 52 :外氣導入配管 54 :外氣調整閥 5 6 :濕度感測器 5 8 :配線 60 :淋洗器 62 :常閉閥 64 :旁通配管 A :外氣 N W :新水 W :水 X :半導體排氣 -25The semiconductor exhaust X is thermally oxidatively decomposed under certain conditions, and the flow path of the processed semiconductor exhaust X discharged through the exhaust fan 18 to the atmosphere is prevented from being dew condensation. In the semiconductor exhaust gas treatment device 10 according to the first aspect of the invention, in the semiconductor gas treatment device 10 of the first aspect of the invention, "the decomposition gas supplied to the reaction furnace 14 and the outlet scrubber 16 is supplied to the pipe 40. By washing the inside of the shower 60 (60), it is possible to prevent dust generated by thermal oxidative decomposition of the semiconductor exhaust X from being deposited in the decomposition gas supply pipe 40, or to prevent thermal oxygen from being generated in the semiconductor exhaust X. -11 - 200904511 Hydrogen fluoride (HF) derived during decomposition is used to corrode the pipe 40. Further, it is possible to use a high-temperature semiconductor exhaust gas X which is thermally oxidatively decomposed by the reaction furnace 14 before being sent to the outlet scrubber 16 to be cooled, and it is possible to use an inexpensive product which suppresses heat resistance (for example, a corrosion-resistant resin is provided on the surface thereof). The coated stainless steel material or the like is used as a material for forming an exhaust gas flow path after the rinser 60. In the semiconductor exhaust gas treatment device 1 according to the first aspect of the invention, the invention provides the invention that the external air introduction pipe 52 is provided near the suction port of the exhaust fan 18; A bypass piping 64 communicates the inlet conduit 22 and the suction port of the exhaust fan 18 through the normally closed valve 62; and a pressure switch 42 when the pressure in the inlet conduit 22 reaches a predetermined upper limit setting When the pressure is applied, the normally closed valve 62 is opened. When the exhaust gas flow path of the semiconductor exhaust gas treatment device 10 is blocked for some reason and the internal pressure of the inlet duct 22 is increased, the pressure switch 42 is caused. In operation, the normally closed valve 62 is opened, and the bypass pipe 64 is circulated. Therefore, before the semiconductor manufacturing apparatus which is the source of the semiconductor exhaust gas X is damaged by the increase in the internal pressure of the inlet duct 22, the semiconductor exhaust gas X can be used as the safety level. The introduced outside air A is sufficiently diluted, and the semiconductor exhaust gas X is discharged in an emergency evacuation manner. (Effect of the Invention) According to the invention of the first aspect of the patent application, since the semiconductor exhaust gas discharged from the chamber of the semiconductor manufacturing apparatus is first washed with the inlet washing -12-200904511, the dust can be removed from the exhaust gas. And water-soluble gas removal' and prevent damage to the semiconductor manufacturing equipment due to backfire or explosion. Further, since the electrothermal heater is used as the heat source of the reaction furnace, even if the semiconductor exhaust gas is introduced into the high-temperature reactor in the state of water content, there is no problem that the temperature in the furnace is rapidly lowered. According to the invention of claim 2, the pressure in the inlet duct can be controlled to a certain decompression state, which can prevent the semiconductor manufacturing apparatus from being adversely affected as the pressure fluctuates, and can often exhaust the semiconductor under certain conditions. Perform thermal oxidative decomposition. According to the invention of claim 3, condensation can be prevented from occurring in the gas circulation path after the exhaust fan, and the maintenance load of the gas circulation path after the exhaust fan can be reduced. According to the invention of claim 4, by the multiplication of the exhaust fan control means and the external air regulating valve, it is possible to prevent the semiconductor manufacturing apparatus from being adversely affected by the pressure fluctuation in the inlet duct, and it is possible to often have certain conditions. The semiconductor exhaust gas is thermally oxidatively decomposed, and condensation can be prevented from occurring in the flow path of the processed semiconductor exhaust gas discharged to the atmosphere through the exhaust fan. According to the invention of claim 5, it is possible to prevent the decomposition gas from being supplied to the piping to be occluded or corroded to reduce the maintenance frequency, and it is possible to use a cheap product which suppresses heat generation as a material for forming an exhaust gas flow path after the rinsing device. According to the invention of claim 6 of the patent application, even if the exhaust gas flow path of the semiconductor exhaust gas treatment device 1 闭 is blocked for some reason - 13-200904511, the semiconductor exhaust gas can be made safe. The method uses the external air to be sufficiently diluted, and the semiconductor exhaust gas is discharged in an emergency evacuation manner. Therefore, it is possible to provide a semiconductor exhaust gas treatment apparatus which can decompose and deplete semiconductor exhaust gas containing PFCs efficiently, safely and reliably. [Embodiment] Hereinafter, the present invention will be described with reference to the illustrated embodiments. Figure 1 is a schematic diagram showing the flow of the apparatus of the present invention. As shown in the figure, the semiconductor exhaust gas treatment device 10 of the present embodiment is basically constituted by an inlet scrubber 12, a reaction furnace 14, an outlet scrubber 16, an exhaust fan 18, and a storage tank 20. . The inlet scrubber 12 is for removing dust or water-soluble gas contained in the semiconductor exhaust gas X introduced into the reaction furnace 14, and has a straight tube type scrubber main body 12a and an inside of the scrubber main body 12a. The spray nozzle i2b that sprays the water W or the chemical solution in the vicinity of the top portion, and the top portion of the inlet scrubber 12 is connected to the semiconductor manufacturing device (not shown) of the factory through the inlet duct 22, and will be connected by Various semiconductor exhaust gases X discharged from the semiconductor process are introduced into the top of the inlet scrubber 12. Further, in the present embodiment, the inlet scrubber 12 is configured to be disposed separately from the water tank 20, and to connect the two by the water washing gas supply pipe 24 and the drain pipe 26 to drain the inlet scrubber 12. It is fed into the water tank * 14 - 200904511 20, but the inlet scrubber 1 2 can also be placed on the water tank 20 to directly communicate the interiors with each other. Next, a circulating water pump 28 is provided between the spray nozzle 12b and the water tank 20, and the water W stored in the water tank 20 is sucked to the spray nozzle 12b. The reactor 14 is a device for decomposing the semiconductor exhaust gas X by a thermal oxidative decomposition method, and is composed of a reactor main body 30, a gas supply pipe 32, and an electric heater 34. The reactor body 30 is composed of a cylindrical outer jacket made of stainless steel (SUS) and a lining member made of a refractory material, and an exhaust gas decomposition processing chamber 36 is formed inside the lining member. A gas discharge portion 3 is provided in a lower portion of the reactor body 30, and a decomposition gas for supplying the semiconductor exhaust gas X decomposed by the exhaust gas decomposition treatment chamber 36 to an outlet scrubber 16 to be described later is connected. Send to the pipe 40. Further, a gas supply pipe 32 composed of a metal pipe having excellent heat resistance and corrosion resistance is provided in the center of the bottom portion of the reactor body 3, and is disposed so as to surround the periphery of the electrothermal heater 34. The gas supply pipe 32 is inserted into the exhaust gas decomposition processing chamber 36, and the water supply gas supply pipe 24 is connected, which is led out from the lower end of the inlet scrubber 12 and is cleaned by the inlet scrubber 12. The semiconductor exhaust gas X is supplied to the gas supply pipe 3 2 . The electrothermal heater 34 heats the inside of the exhaust gas decomposition treatment chamber 36 to thermally decompose the semiconductor exhaust gas X. In the case of the electrothermal heater 34, a series of rod-shaped bodies of solid or hollow carbide such as tantalum carbide are formed. Further, a power supply portion 34a is provided at an end portion of the electrothermal heater 34, and electric power is supplied from a power source (not shown) in the power supply -15-200904511 portion 34a, and the electric heater 34 is heated. Here, in the semiconductor exhaust gas treatment device 10 of the present embodiment, a temperature sensor 3 7 for measuring the temperature inside the exhaust gas decomposition processing chamber 36 is attached, based on the temperature measured by the temperature sensor 37, The power supplied to the power supply unit 34a is controlled. The outlet scrubber 16 is for removing dust or water-soluble gas generated when the semiconductor exhaust gas X is thermally oxidatively decomposed in the reactor 14, and is cooled by the semiconductor exhaust gas X which is to be heated at a high temperature, and has: The straight-tube type scrubber body 16a to which the decomposition gas is supplied to the pipe 40 is connected to the lower end, and the cleaned water is sprayed upward from the semiconductor exhaust gas X in the direction in which it flows (hereinafter referred to as "new water NW" ) or the downward spray nozzle 16b of the chemical solution. In the present embodiment, the outlet scrubber 16 is erected on the water tank 20 for storing the chemical liquid such as the water W, and the new water NW sprayed by the spray nozzle 16b is sent to the water tank 20, but it is also possible The outlet scrubber 16 is disposed separately from the water tank 2, and the two are connected by a pipe to feed the drain of the outlet scrubber 16 into the water tank 20. Next, the top outlet of the outlet scrubber 16 is connected to an exhaust fan 18 that discharges the processed semiconductor exhaust X to the atmosphere. Here, in the semiconductor exhaust gas treatment device 10 of the present embodiment, an exhaust fan control means 50 is provided, which is configured to include a pressure switch 42, and when the pressure in the inlet duct 22 reaches a predetermined upper limit set pressure, The normally closed valve 62 described later is opened; the pressure gauge 44 is for measuring the pressure in the inlet conduit-16-200904511 22; and the frequency converter 48 is connected to the pressure via the wiring 46, and according to the pressure gauge 44 The measured pressure controls the number of rotations of the exhaust fan 18. Further, an external air duct 52 is provided in the vicinity of the suction port of the exhaust fan 18, which applies the external air A to the processed semi-conducting gas X that has passed through the outlet scrubber 16 to reduce the humidity in the gas X. The amount of the air A is introduced to the outside of the suction port of the exhaust fan 18 by the opening degree of the gas regulating valve 54 installed outside the outside air introducing pipe 52. Further, a humidity sensor 56' for wiring to measure the humidity released to the atmospherically processed semiconductor exhaust X is attached between the gas introduction pipe 52 and the exhaust fan 1 8 outside the outlet scrubber 16 to measure the humidity of the semiconductor exhaust gas X released to the atmosphere. 5 8 The gas adjustment valve 54 is provided by the humidity signal measured by the humidity sensor 56. Then, the external air regulating valve 54 is controlled in accordance with the humidity of the semiconductor exhaust gas X measured by the humidity sensor 56, and the gas flow path after the exhaust fan 18 is not dew condensation. The humidity of the semiconductor exhaust X is automatically adjusted. Further, in the upstream side of the gas supply pipe 40 to which the reaction furnace 14 and the outlet scrubber 16 are connected, a rinser 60 for spraying the water W sucked by the circulating water pump 28 is attached. A bypass pipe 64 to which the through-valve valve 62 is connected to the inlet duct 22 is attached to the vicinity of the suction port of the exhaust fan 18. When the normally closed valve 62 is transmitted through the wiring 47 and the pressure input into the signal inlet conduit 22 of the pressure switch 42 reaches a predetermined upper limit setting pressure, the closing valve 6 2 is opened. f 44 The air-flow into the ligand row is adjusted to make the decomposition part of the adjustment part and the medium to the external treatment opening and closing. When the constant -17-200904511 water tank 20 series is stored and supplied to the inlet scrubber 12 or rinsed The water W' of the device 60 also collects a tank of water W discharged from the inlet scrubber 12, the rinser 60, and the outlet gas 16 and the like. Since the fresh water NW sprayed by the spray nozzle 16b of the outlet scrubber 16 is always supplied to the water tank 20, the remaining water is overflowed and sent to the drainage treatment device so as not to store a predetermined amount or more of W (not shown). In addition, in addition to the reaction furnace 14 of the semiconductor exhaust gas treatment device 1 of the present embodiment, in order to protect the respective portions from the conductor exhaust X or the hydrogen fluoride generated by the semiconductor exhaust X decomposition Corrosion caused by uranium-containing components such as acid, and urethane-resistant lining or coating by vinyl chloride polyethylene, unsaturated polyester resin, and fluorine-containing resin. Next, the operation of the semiconductor exhaust gas treatment apparatus 1 of the present embodiment will be described. The semiconductor exhaust gas X discharged from the semiconductor manufacturing apparatus is introduced into the inlet scrubber 12 through the inlet pipe 22, and is in contact with the misty water W scattered by the spray nozzle 12b, and the whitefly in the gas X is The fine droplets dispersed by the spray nozzles 1 2b are brought into contact with each other to be captured and sent to the water 20 . Further, the water-soluble component in the exhaust gas X is also absorbed and removed in water at the same time. The low-temperature wet semiconductor row X cleaned by the inlet scrubber 12 is sent to the gas supply pipe through the water-washing gas supply pipe 24. The exhaust gas X rises in the gas supply pipe 3 2 and is heated by the circumferential temperature during the rise. The gas is supplied to the exhaust gas decomposition processing chamber 36 from the tip end of the gas supply pipe 32 at the time of sufficient warm-up. -18-200904511 surrounded by the guide cloth spray groove W of the middle half of the water spray nozzle. After sufficient preheating, the front end of the gas supply pipe 32 is released into the reactor body 30 (specifically, the exhaust gas is decomposed The exhaust gas X in the processing chamber 36 is immediately thermally oxidized and decomposed in the exhaust gas decomposition processing chamber 36 which is maintained at a sufficiently high temperature. At this time, when the semiconductor exhaust gas X contains a fluorine compound, fluorine (f2) is generated due to thermal oxidative decomposition of the semiconductor exhaust gas X, and the fluorine (F2) immediately reacts with hydrogen or water in the air to generate highly toxic. It is also very soluble in water hydrogen fluoride (HF). The semiconductor exhaust gas X subjected to thermal oxidative decomposition as described above is then introduced into the decomposition gas supply pipe 40 via the gas discharge portion 38. The eluent 60 is attached to the decomposition gas supply pipe 40, and the semiconductor W is sprayed directly into the semiconductor exhaust gas X in the state of the highest temperature and the most molecular motion which is decomposed by the exhaust gas decomposition processing chamber 36. Exhaust gas X and water W can be in high gas-liquid contact. That is, dust or a water-soluble component (e.g., H F ) derived from thermal oxidative decomposition of the semiconductor exhaust gas X can be brought into contact with water and gas at a high probability. Therefore, the dust or the water-soluble component can be effectively dissolved/absorbed in the water W, and the exhaust gas treatment load of the outlet scrubber 16 to be described later can be reduced, and dust or the like can be prevented from accumulating in the decomposition gas supply pipe 40. . Further, it is possible to pre-cool the semiconductor exhaust gas X having a high temperature which is thermally oxidatively decomposed by the reaction furnace 14 before it is sent to the outlet scrubber 16. It is possible to use an inexpensive product which suppresses heat resistance (for example, a corrosion-resistant resin is provided on the surface thereof). The coated stainless steel material or the like is used as a material for forming an exhaust gas flow path after the rinser 60. The water w sprayed by the rinser 60 is sent to the water tank 20° after the decomposition gas is supplied to the pipe -19-200904511. The lower end of the outlet scrubber 16 is sent to the water tank 20°, and then the rinsing device 60 is effective. The semiconductor exhaust gas X, which removes dust or water-soluble moisture and is cooled, is introduced into the outlet scrubber 16' and flows from the lower side in the outlet scrubber 16 toward the upper side. Then, in the outlet scrubber 16 , the semiconductor exhaust gas X that has been subjected to sufficient chemical cleaning and temperature reduction by the fresh water NW to complete the decontamination of the harmful components is passed through the external air introduction pipe 52 . The introduced outside air A is sufficiently lowered in humidity to be released to the atmosphere by the exhaust fan 18. According to the semiconductor exhaust gas treatment device 1 of the present embodiment, the semiconductor exhaust gas X discharged from the chamber of the semiconductor manufacturing apparatus is first washed with the inlet scrubber 12, so that dust and water-soluble gas can be extracted from the exhaust gas X. Remove. Further, since the inlet scrubber 12 is filled with the water sprayed by the spray nozzle 12b, even if a flammable component such as hydrogen is burned in the reactor 14 to generate a flame, there is no fear that the flame will face the inlet scrubber 1 The more upstream side of 2, that is, the semiconductor manufacturing device. Further, the semiconductor exhaust gas X which has been washed with water by the inlet scrubber 12 is introduced into the high-temperature reactor 14 in a state of containing water, but the electrothermal heater 34 is used in the semiconductor exhaust gas treatment device 10 of the present embodiment. As the heat source of the reaction furnace 14, there is no problem that the temperature of the furnace is rapidly lowered as the flame disappears like a burner. Further, by introducing the semiconductor exhaust gas X in a water-containing state into the reaction furnace 14 as described above, the reaction product of NF3 is generated by hydrogen derived from the aforementioned moisture, and the fluorine (F2) conversion causing the malodor is -20-200904511. After the HF, the outlet scrubber 16 described later can be used to remove water from the semiconductor exhaust gas X by adsorbing water. Therefore, it is different from the combustion wet method in which fluorine (F2) cannot be detoxified and released directly into the atmosphere. The problem of malodor caused by fluorine (F2) can be solved. Further, the temperature in the reactor 14 is not excessively increased as in the case of the combustion wet cleaning method using a flame. Therefore, even in the case where the semiconductor exhaust gas X subjected to thermal oxidative decomposition contains a large amount of nitrogen (N2), there is no need to worry about the generation of harmful NOx (nitrogen oxide). Next, due to the use of the outlet scrubbing The semiconductor exhaust gas X which is thermally oxidatively decomposed in the reaction furnace 14 is washed with water/cooled and then discharged to the atmosphere, so that dust or water dissolved during thermal oxidative decomposition of the semiconductor exhaust gas X can be removed. The component is cleaned and the sterilized semiconductor exhaust X can be discharged to the atmosphere in a cleaner state. Here, in the combustion wet cleaning method, since the flame is generated by the burner, the fuel gas and the combustion air are necessary. Therefore, the amount of gas processed by the outlet scrubber will increase. If the amount of gas to be treated by the outlet scrubber is increased as described above, and the inside of the apparatus is to be maintained at a certain reduced pressure, the capacity of the exhaust fan must be increased to increase the amount of exhaust gas. As a result, the amount of moisture carried out by the outlet scrubber to the exhaust duct becomes large, and condensation is easily generated in the exhaust duct. On the other hand, in the apparatus 10 of the present invention, since the fuel gas and the combustion air are not required, the amount of moisture carried out by the outlet scrubber 16 is small, and it is difficult to cause dew condensation in the exhaust duct. Further, since the exhaust fan control means 50 is provided, the pressure in the inlet port 22 - 200904511 can be controlled to a certain decompression state, and the semiconductor manufacturing can be prevented by the pressure fluctuation in the inlet duct 22. The device is adversely affected, and the flow rate of the semiconductor exhaust gas X flowing through the device 1 is kept constant, and the semiconductor exhaust gas X can be thermally oxidized and decomposed frequently under certain conditions. Further, since the external air A is applied to the semiconductor exhaust gas X that has been processed by the outlet scrubber 16 in the vicinity of the suction port of the exhaust fan 18 to reduce the humidity in the gas X, the external air introduction pipe 52 is provided. Therefore, the humidity of the processed semiconductor exhaust gas X discharged to the atmosphere through the exhaust fan 18 can be reduced, and condensation can be prevented from occurring in the gas flow path after the exhaust fan 18, and a problem arises. Here, in the semiconductor exhaust gas treatment device 10 of the present embodiment, the external air introduction pipe 52 is attached with the external air A applied to the processed semiconductor exhaust gas X in accordance with the humidity measured by the humidity sensor 56. The external air-conditioning valve 54 is configured to open and close the external air-conditioning valve 54 so as to prevent condensation from occurring in the gas flow path after the exhaust fan 18, but the external air-regulating valve 54 is opened and closed. The internal pressure of the semiconductor exhaust gas treatment device 1 改变 will change 'and the pressure fluctuation will of course occur in the inlet conduit 22 as well. However, since the exhaust gas control means 50 is provided in the semiconductor exhaust gas treatment device, even when the external air regulating valve 54 is opened and closed to change the internal pressure of the semiconductor exhaust gas treatment device 1 ' The pressure gauge 44 senses the change in the internal pressure, and controls the number of rotations of the exhaust fan 18 so that the pressure difference in the inlet duct 2 2 is constant. -22- 200904511, that is, by the action of the exhaust fan control means 50 and the external air regulating valve 5, the pressure in the inlet duct 22 is maintained at a constant pressure reducing state to prevent pressure fluctuation in the inlet duct 22. The semiconductor manufacturing is adversely affected, and the semiconductor exhaust gas X can be thermally oxidized and decomposed frequently under certain conditions, and condensation can be prevented from occurring in the flow path of the processed semiconductor exhaust gas X in the exhaust gas passing through the exhaust fan 18. In the semiconductor exhaust gas treatment device 10 of the present embodiment, a bypass pipe 64 to which the normally closed valve 62 is attached is separately provided; and a pressure switch 42 that is opened by the normally closed valve 62, and thus, because of some (for example, SiO 2 ) When the semiconductor exhaust gas treatment device closes the exhaust gas flow path and increases the internal pressure of the inlet conduit 22, the force switch 42 operates to open the normally closed valve 62, and the bypass 64 is made available. Circulation. Therefore, the source conductor manufacturing apparatus which is the semiconductor exhaust gas X is damaged by the increase in the internal pressure of the inlet duct 22, and the semiconductor exhaust gas X can be leveled, and the external air introduction pipe 52 can be used. The outside air A is sufficiently diluted to discharge the semiconductor exhaust X in an emergency evacuation manner. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic flow chart showing a semiconductor exhaust gas treatment apparatus of the present invention. [Description of main component symbols] 10: The semiconductor exhaust gas treatment device is multiplied by the bear, and is subjected to a large 0. The -23-200904511 1 2: inlet purge of the one half of the pressure pipe for the cause 0 12a: scrubber body 1 2 b : spray nozzle 14 : reaction furnace 1 6 : outlet scrubber 1 6 a : scrubber body 16b : spray nozzle 1 8 : exhaust fan 2 〇: sink 22 : inlet duct 24: Washing gas supply pipe 26: Drain pipe 2 8 : Circulating water pump 3 0 : Reactor body 3 2 : Gas supply pipe 3 4 = Electrothermal heater 34a: Power supply unit 3 6 : Exhaust gas decomposition treatment chamber 3 7 : Temperature sense Detector 3 8 : gas discharge unit 40 : decomposition gas supply pipe 4 2 : pressure switch 44 : pressure gauge 46 : wiring - 24 200904511 4 7 · wiring 48 : frequency converter 5 0 : exhaust fan control means 52 : external air Introduction piping 54: External air regulating valve 5 6 : Humidity sensor 5 8 : Wiring 60 : Ejector 62 : Normally closed valve 64 : Bypass piping A : External air NW : New water W : Water X : Semiconductor exhaust -25