TW200849346A - Cluster ion implantation for defect engineering - Google Patents

Abstract

A method of semiconductor manufacturing is disclosed in which doping is accomplished by the implantation of ion beams formed from ionized molecules, and more particularly to a method in which molecular and cluster dopant ions are implanted into a substrate with and without a co-implant of non-dopant cluster ion, such as a carbon cluster ion, wherein the dopant ion is implanted into the amorphous layer created by the co-implant in order to reduce defects in the crystalline structure, thus reducing the leakage current and improving performance of the semiconductor junctions. Dopant ion compounds of the form AnHx+ and AnRzHx+ are used in order to minimize crystal defects as a result of ion implantation. These compounds include co-implants of carbon clusters with implants of monomer or cluster dopants or simply implanting cluster dopants. In particular, the invention described herein consists of a method of implanting semiconductor wafers implanting semiconductor wafers with carbon clusters followed by implants of boron, phosphorus, or arsenic, or followed with implants of dopant clusters of boron, phosphorus, or arsenic. The molecular cluster ions have the chemical form AnHx+ or AnRzHx+, where A designates the dopant or the carbon atoms, n and x are integers with n greater than or equal to 4, and x greater than or equal to 0, and R is a molecule which contains atoms which, when implanted, are not injurious to the implantation process (for example, Si, Ge, F, H or C). These ions are produced from chemical compounds of the form AbLzHm, where the chemical formula of Lz contains R, and b may be a different integer from n and m may be an integer different from x and z is an integer greater than or equal to zero.

Description

200849346 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor manufacturing method in which an ion beam formed by ionizing 2 ions is completed, and more specifically, And a method of implanting molecular and eutopic dopant ions into a substrate without using one of non-dopant cluster ions (eg, one-carbon town ions), wherein the dopant ions are implanted by the co-implantation Establishing an amorphous layer to reduce defects in the crystalline structure, thereby reducing leakage current and improving the performance of the semiconductor junctions, the dopant ions having the form AnH / or ζΗχ where 11, parent and 2 Is an integer and η is greater than 4, and 乂 and ζ are greater than or equal to: 〇, and lanthanide carbon, boron, indium, arsenic, phosphorus, or antimony, non-doped knives free radicals or ligands, which are Incorporation and doping procedures or atomic compositions that are not harmful to the heart, such as Si, Ge, F, and c. This month, the automatic amorphization characteristics of the clusters are utilized in order to improve the problem of dopant damage caused by prior azimuth implantation of prior art Ge by transmission annealing. These species provide the formation of η and p-type defect-free USJ, either alone or in combination. [Prior Art] Ion Implantation Procedure The fabrication of a semiconductor device includes, in part, introducing a specified impurity into a semiconductor substrate to form a doped region. The impurity elements are selected to be properly bonded to the semiconductor material to create an electrical carrier. This introduction changes the conductivity of the semiconductor material in the "doped" region. The dopant impurity concentration thus introduced determines the conductivity of the final region. The electrical carrier can be electrons (produced by erbium type dopants) or holes (produced by erbium type dopants). Many such "and" type 130549.doc 200849346 impurity regions must be established to form a transistor structure, a embossed structure, and other such electronic structures that collectively function as a semiconductor device. Introducing a foreign matter into a semiconductor The conventional method in the conductor substrate is ion implantation. In the ion implantation, the feed material containing the snow and the halogen is introduced into an ion source, and the energy is supplied to ionize and feed the material. Producing ions containing doped halogen. For example, in bismuth, element r, and Sb system donor or 払 3L dopant, and B and In receptor or p-type dopant. Provide an accelerating electric field for extraction and The ion beam is accelerated by accelerating ions and nucleus. Usually, the ion contains a positive charge. However, in a specific inch, a negative ion can be used. Mass analysis is used to select the actual species to be implanted. The beam can then pass through the ion optics, which change its final rate or change the basin space = cloth before it is directed to the semiconductor substrate or workpiece. The accelerating ions possess a well-defined kinetic energy, The ions can pass through the target to a predetermined depth. Both ion energy and mass determine the depth at which they penetrate the target. Higher energy and/or lower mass ions allow deeper penetration into the target because of the higher rate. The system is configured to carefully control the key variables in the implant procedure. Key variables include ion acceleration, ion mass, ion beam current per unit time charge, and ion dose at the target (through the target unit) The total number of area ions. It is also necessary to control the divergence angle of the beam (the angular variation of the ions as it strikes the substrate) and the spatial uniformity and extent of the beam to maintain the semiconductor device yield. Ion implantation is followed by a 35 or annealing step. The Λ step has a dual purpose. The first 'activation of the implanted semiconductor dopant. The activation system is replaced by the atomic atom of the crystal 130549.doc 200849346. This step is required to change the conductivity of the material. Crystal damage caused by ion implantation procedures. Crystal damage is caused by two energy loss mechanisms that reduce ion energy (speed) t 'There is electron energy loss & here, the energy from the ion transfer material electrons. This can cause point defects in the crystal. These defects can be easily restored by the reduction of hundreds of degrees Celsius. Second, there is a nucleus Energy loss, which occurs when the ions collide with the lattice atoms. This causes the energy to transfer to the lattice original +, and can actually hit it out, and raise it at a rate to make it try to hit another atom. This atomic movement causes the series of displacement atoms to cause defects in extension. These defects are more difficult to recover and require higher temperature processing. The probability of electron-to-moon transition is higher at high energy than at low energy. On the contrary, the probability of a nuclear conflict event is lower at high energy and higher at low energy. Because &, near the surface with higher ion beam energy, most of the missing points are missing, but in energy The material that has been reduced is deeper, and the defects are mainly due to the large nuclear impulse and are more difficult to remove through annealing. The missing & % at the end of the ion path is a dry-end tip defect, especially difficult to anneal. The curves are removed to reach the temperature of the melting point. It is known that such high temperature annealing is detrimental to the device, the structure of the dopant, because it causes a longer diffusion length, and results in a dopant profile curve that is more bead than the desired one. This problem has been studied for a long time in addition to reducing the damage of device performance while not allowing the dopant to be deepened into the substrate. Due to the solid state device, it has been exhibited in the Xuxi annealing program. Such schemes include low temperature long-term annealing to high temperature extremes (iv) time annealing 'e.g., read laser annealing or liquid phase 130549.doc 200849346 annealing', for example, using a flash and a laser that melts a very near surface. Even microwave and shock waves have been tried to anneal the implanted crucible. The goal is always high activation, shallow distribution of dopants, and removal of residual crystal damage. Residual damage after annealing must be designed to ensure proper skirting performance. During the annealing, there is a strong interaction between the implant condition, the annealing condition and the environmental condition. During implantation, species, energy, dose, dose rate, temperature, direction of the crystal circle relative to the ion beam, and angular uniformity of the ion beam all have an effect on the damage curve in the 矽 crystal. Annealing temperature, ramp rate, time and temperature of the hot flat line zone, slope rate of the flat line interval, slope rate between the flat line area and the maximum temperature, maximum temperature, time at maximum temperature, and extinction rate all on the damaged structure and The quantitative curve has an effect. The chemical environment during annealing and the wavelength of the annealing energy all affect the final state of damage. This research and control of these variables and their interaction with each other is called defect engineering. The purpose is to treat the material in a manner that will be used for positive results (eg, in inhalation) or to minimize residual damage in the cell junction, where residual damage can create an externally inductive path that results in a gap between adjacent transistors. Bubble or crosstalk. A key procedure in semiconductor fabrication is the creation of a p_N junction in a semiconductor substrate. This requires the formation of adjacent regions of P-type and N-type doping. An important example of forming such a junction is the implantation of a P or N type dopant into a semiconductor region that already contains a uniform distribution of dopant types. In these cases, an important parameter is the interface strength. The junction depth is defined as the depth of the semiconductor surface from the P-type and N-type dopants having equal concentrations. This junction depth is a function of the amount of implanted dopant, energy and dose. 130549.doc •10- 200849346 The most important aspect of modern technology is the evolution to smaller and faster devices. This program is called scaling. Scaling is driven by advances in lithography etching methods, allowing for increasingly smaller feature definitions in semiconductor substrates containing integrated circuits. A generally acceptable scaling theory has been developed to guide wafer manufacturers to resize appropriately at the same time in all semiconductor device designs: either at each technology or scaling node. The maximum scaling of the ion implantation procedure affects the scaling of the junction depth. This requires a reduction in the junction depth as the device size decreases, so a shallow junction is required as the integrated circuit technology scales. It can be converted to the following requirements: The ion implantation energy must be reduced at each scaling step. The ultra-shallow junction of modern sub-1 nanometer (nm) devices is called, ultra-shallow junction, or USJ. Physical Limitations of Low-Energy Beam Transmission Due to the sharp scaling of the depth of the interconnect surface in CMOS processing, the ion energy required for many critical implants has been reduced to the point where conventional ion implantation systems are unable to sustain the desired wafer production. The limitations of conventional ion implantation systems at low beam energies are evident in the ion excitation of the ion source and its subsequent transmission through the beamline of the implanter. The ion excitation is controlled by the Child-Langmuir relation, which indicates that the excitation beam current density is proportional to the excitation voltage (i.e., the beam energy at the time of excitation) raised to 3/2 power. Similar constraints affect the transmission of low energy beams after excitation. The lower energy ion beam travels at a lower rate, so for a given value of beam current, the ions are closer to each other, i.e., the ion density increases. This can be seen from the relation > where / is the ion beam current density, unit mA / cm2, " is the ion density, unit ion / cm · 3, e-line charge (= 6 〇 2xl (ri9 Coulombs) ), ν series average ion rate in cm/s. Furthermore, since 130549.doc -11 - 200849346: the electrostatic force between the sub-subverses is inversely proportional to the distance between the bungalows, the electrostatic repulsion is stronger at low energy, which leads to the ion beam The phenomenon of dispersion increases. This phenomenon is called "beam burst" and is the main cause of loss of internal beam loss. Low-energy electrons present in the beam of the implant tend to be captured by the positively charged ion beam, which compensates for transmission. During the period, the m-charge bursts. ^Brokenness still occurs, and it is most noticeable in the presence of electrostatic m-mirrors, which tend to strip loosely from the beam, and compensate for electrons in the south. In particular, there is a serious problem with lighter ions. It is difficult to take and transmit 'for example, N-type dopants and Shishen. Because it is lighter than God' phosphorus atoms penetrate deeper into the substrate than many other atoms, including arsenic. Therefore, the energy required for planting is lower than that of God. In fact, the specific leading edge USJ program needs To minimize the low implant energy of Si keV. The heavy species of the rut, specifically the cluster molecules, not only provide increased beam current, but also tend to automorphize the crystalline yttrium lattice in many cases. Crystallization has been shown to be beneficial for the activation of p-type dopants, such as cleavage and provides similar advantages for N-type dopants. In addition, automatic amorphization reduces ion channelization, which provides It is possible to have a shallower junction. In fact, the recording procedure for many USJ logic manufacturers consists of pre-amorphized implants with or Si, prior to performing conductive doping implantation: to mitigate channelization effects. The pre-amorphization implant using Ge«i has been shown to create a defect in the perimeter of the perimeter, which causes an increase in bubble leakage in the fabricated device. A large group or molecular implant has recently been shown to reduce or eliminate the range of end-changes. There are many possibilities for hybrids. The types and locations of defects in the crystal can be controlled by modifying the cluster or molecular composition and the composition used in the doping crystal. The carbon-containing molecular ions can also be used to resemble Si, Ge and doped. Miscellaneous cluster 1305 49.doc -12-200849346 The method of pre-amorphizing a semiconductor substrate, as disclosed in co-pending, copending U.S. Patent Application Serial No. 1/634,565, filed December 2006 For "System and Method for the Manufacture of Semiconductor Devices by the Implantation of Carbon

Clusters", Wade A. Krull and Thomas N. Horsky. In addition, carbon is known to inhibit the diffusion of boron during the annealing process. Molecular ion implantation overcomes the limitations imposed by the Child-Langmuir relationship described above by ionization. A molecule containing a dopant of interest increases the transfer energy rather than using a single dopant atom. Although the kinetic energy of the molecule is high during transport, after entering the substrate, the molecule splits into its constituent atoms, and the basis between the individual atoms The distribution in the middle shares the molecular energy, so the implant energy of the dopant atoms is much lower than the initial transport kinetic energy of the molecular ions. Consider the dopant atom "X" to 5 to the free radical Y (for the purposes of discussion, no matter what Whether "γ" will affect the problem of device formation procedures). If the χ+ implant ion χγ+ is replaced, it must be extracted and transmitted with a high energy. The multiple of 増 is equal to the mass of χγ divided by the mass of X. This ensures that the rate of χ is the same in either case. The space charge effect described by the Child-Langmuir relation described above is superlinear with the ion energy, and the maximum transportable ion current is increased. It is known from experience that the use of polyatomic molecules to improve low energy implantability is well known in the art. - A common example is the use of BV molecular ions for implantation of low energy (tetra) generation B+. This procedure separates the BF3 feed gas into a + ion for implantation. In this way, the ion mass increases from 11 AMU to 49 AMU. This will extract and transfer energy to 4 times higher than the single shed atom to 130549.doc -13 - 200849346 (ie, 49/11). However, at the time of implantation, the boron energy was reduced by the same (49/11) times. It is worth noting that this method does not require a reduction in the current density in the beam because there is only one boron atom per unit charge in the beam. The disadvantage of this procedure is the implantation of fluorine atoms along with the collar into the semiconductor substrate. Because it is known that Dun has a negative effect on the semiconductor device, it is a feature that does not meet the demand in this technology. Steal Implantation A more efficient way to increase the dose rate is to implant clusters of dopant atoms. That is, the molecular ion of the form xnYm+, which is an integer greater than the recent use of boron clusters as a feed material for ion implantation has become a developmental defense. The implanted microparticles are the positrons, such as the positive ions, which contain 18 neutrons and are therefore the sputum of the county. This technique not only increases the ion mass and therefore the transport ion energy, but for a particular ion current, it substantially increases the implant dose rate because the shunt ion Bi8H/ has eight. What is important is that by significantly reducing the current carried in the ion beam (multiple ig in the case of cluster ions), not only is the space charge effect of the beam reduced and the beam is increased and the wafer charging effect is also cut back. Since positive ion bombardment is known to reduce device yield via wafer charging, which in particular can damage sensitive interpole insulation, this reduction in current through the use of cluster ion beams is attractive in terms of USJ device fabrication. USJ manufacturing must gradually accommodate thinner interpolar oxides with a particularly low closed-pole threshold voltage. Therefore, in the face of two different problems in today's semiconductor manufacturing industry, there are two key points to be solved: wafer charging and low productivity in low-energy ion implantation. 130549.doc 200849346 The main way to form shallow junctions in each generation of the past generations is through subtraction >, annealing time (soaking, spikes, millisecond annealing) and overall thermal budget. Although the secondary method produces a shallower junction with good activation, it makes recovery of implant damage more difficult. In particular, range end (E〇R) defects established by the widespread use of pre-amorphization (pai) implants are typically retained after low thermal budget processing, which results in higher junction leakage. Since the establishment of end-of-range defects has proven to be a significant barrier to the fabrication of very low-leakage USJ devices, the fabrication of transistors with improved /3⁄4 leakage characteristics is therefore necessary to enable future generation of mobile devices. As described below, ion implantation with boron and carbon clusters provides for the elimination of all defects and enables the target US J for 45 nm, 32 nm, and smaller technology nodes. Cluster ion implantation or molecular implantation has recently emerged as a production alternative to USJ formation. The use of cluster species has dramatically increased wafer throughput for ultra-low energy implants required for USJ formation [1]. Clustering techniques are now available for implants of B (B18HX+), c (C16HX+ or C7HX+), As (As4+), and p (P4+). Furthermore, it is now apparent that the automatic amorphization of these implants allows for the elimination of Ge PAI steps 'for example, such as j〇hn Borland, Masayasu Tanjo, Dale Jacobson, and Takayuki Aoyama in Florida, USA, June 5-8, 2005. Fabrication, Characterization, and Modeling of Ultra-Shallow Doping pr0fiies in Semic〇nduct〇, the 8th International Symposium on the Fabrication, Characterization and Modeling of Ultra-Shallow Doping and Variability Curves in Semiconductors, Daytona Beach, State Rs", pp. 2〇1 to 208', which is incorporated herein by reference. Recently in the following literature, by John Borland et al., May 15, 2015, 130549.doc -15- 200849346 to 16 The IEEE Extension Summary of the 6th International Symposium on Joint Technology held in Shanghai, China, pages 4 to 9, by John B〇Hand et al., June 11-16, France, Marseille, France The IEEE International Collection of the 16th International Conference on Ion Implantation Technology 4, which is incorporated herein by reference, has reported that when using low thermal budget SPE and laser annealing, the Bi8H/implant junction produces much lower than B, BF2 or Ge advance Photoluminescence (pL) and leakage k of any of the crystallized samples. By careful tem analysis of the implanted sample with the annealing cycle of spikes, SPE, laser, and flash technology, it has been decided to use a sufficient dose. The code or carbon cluster is implanted into the wafer to amorphize the germanium to produce a clean annealing junction with no observable E〇r defects. Although the theoretical basis of this effect is still emerging, it is clear that the implantation of lighter clusters is basically different. Implantation of monomer ions.

In the implantation of ions formed by B1SH22, an appropriate calculation of the implant dose (multiplying the measured dose by 18) and the adjustment of the implant energy for rotten or bf2 implantation have been set (for the side, Taking the ion energy divided by 20, for the BF? system divided by 4.3), the simple replacement of this species not only matches the implant volume curve, but also significantly eliminates channelization due to the automatic amorphization characteristics implanted in this cluster. Such as Y·Kawasaki, T. Kuroi, K

Horita, Υ· Ohno and Μ·Yoneda, Tom Horsky, Dale Jacobson, and Wade Krull, as disclosed on pages 25 to 29 of &quot;Nucl. Inst. Meth. Phys. Res. B 237 (2005), The way is incorporated herein. One of the surprising side advantages of this replacement is the presence of defects observed in the annealed joint produced by this method. One measure of semiconductor performance is the amount of leakage current across the junction. The bubble leakage current originates from defects in the crystalline structure of the substrate, which is caused by the dopant implants 130549.doc -16-200849346. Although efforts have been made to reduce defects and thereby reduce the flow of available semiconductors, the available semiconductor TM streams are still below. Therefore, it is necessary to improve the efficiency of the semiconductor junction by reducing the line leakage current. ▼版接面 [Summary of the Invention] Briefly, the present invention relates to a semiconductor manufacturing method in which the implantation of an ion beam formed by ionized molecules is completed by a more special "system" with or without a dopant cluster ion, such as a method in which one of the erbium ions is co-implanted into a substrate, wherein the dopant ions are implanted into the substrate, wherein the dopant ions are implanted by the dopant ion Co-implantation to establish a non-layer 'in order to reduce defects in the crystalline structure' to reduce leakage current: improve the efficiency of the semiconductor junction. Use A + and W forms of dopant ionic compounds to minimize ion implantation Caused by crystal defects. The specific compound includes co-implantation of carbon clusters with implantation of monomer or cluster dopants, or only implanted cluster dopants. In particular, the invention described herein is implanted. A semiconductor wafer consisting of a carbon cluster implanted into a semiconductor wafer followed by implantation of a stone, scale, or stone, or implantation of a dopant cluster in H or stone. Ions have the chemical formula AnHx or AnR zHx+, where A specifies a dopant or carbon atom, n and X are integers and η is greater than or equal to 4, and X is greater than or equal to 0, and R is a molecule comprising atoms that are not harmful to the implantation procedure upon implantation ( For example, si, Ge, f, η or C). The plasma is generated from a chemical compound of the formula, wherein the formula 1^ contains r, b may be different from an integer of n, and the claw may be different from X. An integer, z is an integer greater than or equal to zero. 130549.doc 17- 200849346 r Some of these implanted dopants containing As or P atoms have been co-pending US Provisional Patent Application No. 60/ to Manning et al. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> </ RTI> <RTIgt; Hydrogen p7H3; cyclopentazone hydrogen P5H5; P7H3; As5H5; As7H3; 肆-叁 butyl hexaphosphine; pentylmethyl heptahydrogen; polyphosphide: Ba3P14, Sr3P14, monomer phosphide · Li3P7, Na3P7 , K3P7, Rb3P7, Cs3P7; to Me3SiPH 2; (MQSiPh; compound Pll(SiMe3)3&amp;As7(SiMe3)3;p&quot; (siM, and As3(SiMe3)3; As7(SiH3)3 and As5(SiH3)5; and p7(SiMe3)3. Further, the boron-carrying cluster materials b1gh14, B18H22, b2h6, B5H9, b20hx, and, for example, C2bi〇Hi2, which can be used for PM〇s implantation. The present invention is also directed to a method of fabricating a semiconductor device capable of forming an ultra-shallow impurity doped region in a pre-amorphized region, which is formed by carbon clusters in the form of CnHx or cnRzHx, wherein c-carbon , (10) chloro '... is an integer and (2) '... is a molecule, a radical or a ligand that contains atoms that are not harmful to the implantation procedure or the efficacy of the device, followed by dopant implantation, such as P, A, recognize or k and restrict channelization, doping expansion, and eliminate the end defects in the range when the fitter, the old man, and the old man, are engaged in this. Implantation ο ^Pre-amorphization according to the specific molecule selection ... 1 'to form a thickness equal to five times the range of implant implantation, and the composition of the knife or family, The dose of U externally implanted was amorphized to the aforementioned surface layer with complete 130549.doc 200849346. To effectively control diffusion, the carbon peak concentration must be in the range of 1E17 to 1E19 carbon/cm3. In addition, pre-amorphization implants must always be completed before doping implantation begins. Recent developments in semiconductor wafer development have led to the idea that better activation of source-polarization can be achieved by implantation of Sb4 ions. As described in paragraph [0022], U.S. Patent Application Serial No. 6/856,994, which is hereby incorporated by reference to U.S. Application Serial No. 11/934,873, the arsenic and phosphorus molecular ions can be used for ion implantation, in particular, the applicant's ions. Implant source.锑 belongs to the same row of the periodic table family V, and therefore has the same shell electronic structure as arsenic and phosphorus. The well-known systems As and P are sublimed to form As4 and P4, respectively. It is therefore expected that Sb will sublimate to the Sb4 molecule. In addition, as reported by β· Stegemann, B. Kaiser and K. Rademann in New Journal 〇f PhySics 4 (2002) 89,

Sb4 is a stable molecular cluster which can easily obtain stable molecular clusters by evaporating solid ruthenium. Further, it is a main component of Sb vapor having a small amount of dimer (Sb2) and a trimer (Sb3), see Mark L. Polak et al. J. Chem. v Phys. 97 (12) 'December 1992 15th. Finally, the vapor pressure of Sb is about 1Χ1〇(-5) Torr at 500 C, see RE Honig and DA Kramer. ''RCAReview', 30, (1969) 285, which makes reasonable candidates in typical ions. In the source furnace, the solid body is irradiated. Therefore, the ion implantation, molecular ion implantation, and in particular the tetramer Sb4 can be used for semiconductor fabrication. In a preferred embodiment, the carbon cluster implant system is selected as The amorphous layer is established to be at least as thick as the end of the subsequent dopant implant, so virtually all defects associated with the implant implant are established in the amorphous material. 130549.doc •19- 200849346 This ensures that the defects are removed by annealing during the subsequent activation step. An alternative embodiment of the present invention provides a method of fabricating a semiconductor device capable of forming ultra-shallow impurities of p-type conductivity in a pre-amorphized region. a doped region formed by a CnH/ or CnRzH/form of carbon clusters, wherein 0: is a slave, a lanthanide hydrogen, η, χ &amp; ζ is an integer and is in 丨 and 乂 and z2 〇, and the R system contains a pair of implants Program or semiconductor device performance is harmless y knife, radical or ligand atom, using AnHZ ,,

An ionized cluster of the form AnCmHx or AnCmRzHx+, wherein the octagonal dopant atoms, such as B, P, or As, n, X, and z are integers and 4Q, such as x and Z-〇, (: 妷 atom, R contains molecules, radicals or ligands of atoms that are not harmful to the implantation process or semiconductor device, (8) and eliminates end-of-range defects when combined with proper annealing, and further engages in higher productivity here. The specific molecule selects the energy of the pre-amorphization implant to form an amorphous layer having a thickness equal to five times the range of the implant implant to the dopant implant range. It must be based on specific properties and the composition of the molecule or germanium. The dose of the pre-amorphization implant is selected to completely amorphize the aforementioned surface layer 3. For effective diffusion control, the carbon peak concentration must be in (3)^ to (3)^carbon/

Inside the Cm. In addition, the pre-amorphization implant must always be at the beginning of the doping implant. Pre-amorphization implantation must always be done before doping implantation begins. Another alternative embodiment of the present invention provides a method of fabricating a semiconductor device capable of forming an ultra-shallow impurity doped region of p-type conductivity in an auto-amorphization region using ΑΑΗχ+ or a form of 襄A a dopant atom, such as B, P or As, n, 130549.doc -20- 200849346 1 is a main integer and lsn 'Gsm, and x and pan G, R contain no harm to the implantation process or semiconductor device performance The atomic fraction / / Λ θ θ base or ligand, : while limiting the diffusion of dopants and eliminating the end of the range with a single implant - and step - step with higher productivity. The preferred embodiment of the second carbon box implant is selected such that the amorphous layer it is formed is at least as thick as the subsequent doping: the end of the implanted range, so that it is actually implanted with the dopant.

All defects associated with the system are established in amorphous materials. This ensures that the specific defect is eliminated by annealing the n #H person during the subsequent activation step. In order to effectively control the diffusion, the carbon peak wave must be in the range of 1Ε17 to 1Ε19 carbon/cm3. The present invention increases the advantages of N-type clusters, e.g., by using significantly larger dopants&apos; such as phosphorus or clusters having more than three dopant atoms. Carbon group ions (CXH/) can be used to deliver low-energy, high-dose carbon ion beams to the surface of the semiconductor to eliminate channelization by pre-amorphization of the stone, while positioning the germanium atom = below the surface to substantially reduce the follow-up of the C implant B diffusion within the B implant. In addition, carbon ruthenium exhibits the same charge reduction advantages as doped ruthenium.

There are several mechanisms for the formation of defect-free implants at the ends according to the scope of the invention. These mechanisms include: Mis-implantation is at this low equivalent energy (1), at work keV), i.e., the defect approaches the j-face such that the service surface acts as a defect groove, and all migrate to the surface and evaporate. The current is extremely high, for example, boron equivalent electrons up to 50 mA, which are coupled to all 40 particles near the ,22, resulting in damage to the substantial weight of the series = thus forming a buried liquid layer that will damage the end of the range. The material remains amorphous and the liquid-solid interface is moved at a very high rate 130549.doc 200849346. It is well known from laser annealing that if the liquid-solid interface exceeds the threshold rate, the solid will be amorphous rather than crystalline. If this occurs in laser annealing, where the recrystallization time is on the millisecond level, it is very certain that it will occur at the tandem, where the time is on the order of ιο_12 seconds. See, for example, Phys. Rev. Lett. 50, 896 to 899 (1983) [No. 12, March 1983], ''Silicon Melt, Regrowth, and Amorphization Velocities During Pulsed Laser Irradiation', 0· Thompson and JW Mayer (Material Science Department, 14853, Cornell University, Ithaca, NY), AG Cullis, HC Webber, and Royal G. Chew (Royal Signals and Radar Establishment, Malvern, Worcestershire WR143PS, United Kingdom), J. M. Poate and D. C. Jacobson Bell Laboratory, Murray Hill, NJ 07974 〇 • A large number of hydrogen atoms implanted with dopant atoms or carbon atoms play a specific role in creating defect-free regions or somehow passivating defects so that end-of-range defects can BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a method of fabricating a semiconductor in which doping is accomplished by implantation of an ion beam formed by ionized molecules, more specifically, with or without A dopant cluster ion, such as one of a carbon cluster ion, is implanted together to implant a molecule and a cluster dopant into a substrate. In which dopant ions are implanted to establish an amorphous layer by the co-implantation, thereby reducing defects in the crystal structure, thereby reducing leakage current and improving the performance of the semiconductor 130549.doc -22-200849346. In particular, the new implant technology has been developed as an alternative to low-energy boron implants. The concept of this technique uses molecular ions, which contain many boron atoms to avoid the basic problems of conventional ion implantation of low-energy boron. A new chemical (octadecaborane BlsH22) can be used as a source of this molecule, a boron cluster, and a new ion source has been developed for its use, for example, as of September 14, 2005 U.S. Patent Application Serial No. 10/51M99, entitled &quot;I〇n Implantati〇n and 旺

Method of Semiconductor Manufacturing by the Implantation of Bo (10) Hyddde Cluster Ions &quot;Disclosed&apos; is hereby incorporated by reference. It has been found that rotten clusters have additional advantages in self-amorphization and elimination of crystal defects. In addition, additional species having similar properties have been shown to be particularly useful for the delivery of two molecules of carbon. INTRODUCTION The challenge of scaling semiconductor technology—the need to continue to reduce the junction depth as the true features are scaled. In particular, the challenging system scales the p-type junction depth because the (four) ion implanting equipment in the industry is essentially unable to operate within the parameter domains required to produce the desired junction. This problem has been avoided by the development of annealing techniques in the state of the art node, resulting in a delay in the reduction of implant energy. With the millisecond annealing technique, I ’ without any advancement to advance the annealing machine. In this paper, 'providing new implant technology' directly addresses basic implant problems and provides a technology worthy of production that meets the scaling needs of the foreseeable future. Cluster or Molecular Implantation The basic concept of this new technology is the use of molecular ion species, which contain a 130549.doc -23- 200849346 , a hetero atom. Conventional implantation techniques have utilized ionic species, which contain only one dopant atom per one. By using a "two, heterogeneous: atomic species" implant device per charge, operating at a high n-fold draw voltage, thereby avoiding the fundamental physical limitations of forming an ion beam at low draw voltages. When a species enters a stone wafer, the molecules are separated and the atoms are actually two: the atoms implanted in the system, the atomic energy will be equal to the total ion energy Berry rate. It should be noted that all atoms actually get the same ion energy. The fraction, so there is no change in the implant procedure results compared to implantation by single-atom ions. In this way, low-energy boron implantation procedures can be performed on conventional ion implanters at higher productivity. Boron clusters have developed a new chemical 'as a molecular source, which contains many boron atoms. The dry cluster of boron is a component of the group Β SH22. This chemical is used to generate the ion beam of the species bI8hx+' It is useful for the range of low-energy stone pen implants required for technology nodes at 65 nm and smaller. For example, using BuHx+ with 10 keVi to extract 5 〇〇ev equivalent boron implants = 'system operation He Zhiren's line is very comfortable. This material is solid at room temperature, which is very beneficial for mitigating the toxicity of this hydride material, but it is necessary to develop a new vaporization n technology to provide Bi8h22 to the ion source. The material evaporates from 卯 to 丨(10)艽, providing an engineering solution with high accuracy and reliability. At the other end, the material is decomposed above fine 。. In addition, the engineering solution can adopt high strength and moderateness. The cost is easy to operate in this temperature range because the hardware can be made of aluminum. 130549.doc 24-200849346 Boron clusters are ion beams that form boron clusters, developing a new ion source, such as the 16th

International Ion Implantation Technology ContinuationTM (4) 曰 Τ. N. Kissing Proceedings, p. 159 (expressed in 2, which is incorporated by reference). The basic concept of traditional ion sources is separatism to isolate The required single, so that it acts as a basic ion excitation under high temperature, high density plasma. In contrast, the boron bismuth source is designed to hold larger molecules' and thus operate at low temperatures using &quot;soft ionization&quot; The excitation energy system used for ionization is a low-energy electron beam (a) 0 () eV electrons ~ 50 mA), which is generated away from the program vapor and transmitted to the ionization region. In this way, the ionization is established parallel to and adjacent to the excitation groove. The cylinder of steam allows high-efficiency excitation of B18HX+ ions. This soft ionization system has proven to be very effective in ionizing boron cluster vapors and has achieved currents as high as 3 mA per Β^Η/ion. The mass spectrum is shown in Figure 1. It can be seen that the main ion system is Bi8hx+ ions. The only other beam components are a small amount of double charge (Bu++) and a very small amount of b+ and H+. Specifically, h^, b1sH22 Quality frequency It uses a boron cluster source with 2 〇 keV excitation. Although the program features were originally developed as productivity solutions, boron cluster implants have been found to have several unique and potentially advantageous features. Of course, low energy productivity has been achieved, 50 mA beam current capability at 3 keV, such as Τ·N· Horsky, G·F·R. Gilchrist, R.w. Milgate at the 10th International Conference on Ion Implantation Technology, p. 198 (2006) Proof that it is incorporated herein by reference. This ability translates into a high production 130549.doc -25- 200849346 rate for very low energy implants, which also has mechanical limitability as low as 500 eV and as low as i〇 〇ev Μ production value ability. This low energy ability is from the traditional ion implanter: only slightly modified to take advantage of Βι8Η22 species. Energy pollution is the result of using the subtractive mode, which is used by all traditional implant systems to increase productivity for low implants. Although the amount of contamination in the slowdown beam is generally low (&lt;ι%), it can be Tuning and planting The condition of the device changes, and it has a lower tolerance with the scaling of the technology. The production value capability and energy-free dirt at very low energy, and the BISH22 is very suitable for the SDE implant of the technology node at 45 nm and higher. Attraction. After self-amorphization is implanted into this larger boron cluster, it is expected that the damage variation curve will be different from that of the traditional monolith. Now there are many researches on the damage caused, which produces the concept of self-amorphization. The concept began with the work of B〇dand et al. (16th International Conference on Ion Implantation Technology J. B〇rland Proceedings, p. 6 (2〇〇4), which is incorporated herein by reference). Studies have shown that BuH/implantation itself establishes an amorphous layer at lower doses, and this amorphous layer allows 通道^Η/implantation to avoid most channelization without the use of additional pAi• implants. Studies have shown that the effect of the cluster on the twin-grid gives its power relative to the monomer implantation of the equivalent parameters, preferably near the surface. This enhances flaws at the surface while minimizing depth damage. Therefore, a shallow amorphous layer is formed on the surface at a lower dose, which is sufficient to eliminate the channelization of subsequent cluster implantation. For example, the amorphization is limited to a dose of 1E14/cm2, so a typical SDE implant will be 90% unchannelized. An example of a δ ΐΜ 130549.doc -26-200849346 quantitative curve obtained by Bi8H/implantation is shown in Figure 2, which shows that the quantitative curve has and does not have a PAI and shows that the monomer boron has and does not have pAi. In particular, Figure 2 illustrates the SIMS quantitative curve of Βι8Η/ and monomer b+ implanted with and without the GepAI program. For the κ-only implant, slight channelization was observed. It can be seen that most channelization has been avoided, although some channelization effects are still preserved. The self-amorphization procedure is discussed in more detail below. Carbon cluster molecules' such as palpitations (7) and (:7屮 provide a way to study the mechanisms by which the same chemical damage is established and provide interesting results, such as, for example, K Sekar, WA Krull, τ·H〇rsky, D c jac〇bs 〇n, κ

Jones, D. Henke, in the International Conference on Semiconductor Self-Creation, Weights and Measures, and Modeling, reported from May 6th to 9th, USA, Napa (2〇〇7), which is incorporated herein by reference. Obviously, it can be seen that the use of smaller boron clusters for amorphization requires higher doses, so the damage deposit at the surface is largely dependent on quality. Elimination of E〇R damage The other result of different damage deposition procedures using boron clusters is the end-of-range (EOR) damage and its annealing characteristics. With any amorphous implant, a major problem arises with the requirement to fully anneal the overall structure and eliminate all germanium crystal defects to achieve low leakage junctions. Since the amorphous region is defined by the high damage, it is expected that the germanium crystalline region under the amorphous layer is also seriously damaged, which is generally referred to as EOR damage. It should be noted that the conventional procedure using Ge+ implants produces EOR damage that is challenging for full annealing, especially with advanced, low thermal pre-annealing techniques. In contrast, it has been found that EOR damage caused by clustering is less cumbersome, and many studies now report that 130549.doc -27-200849346 defect-free junctions are even adopted, even with the most modern low-heat budget annealing techniques. Figure 3 shows some of the results of the work of JO·Borland, Proceedings of the 16th International Conference on Ion Implantation, page 6 (2004), which is incorporated herein by reference, which shows a very advanced annealing condition (flash , laser and spE) squat! 8 ΗΧ + implant without defects. In particular, Figure 3 represents a χτΕΜ image of an implanted 8 Ηχ+ implant that has been implanted and laser, flash, and SPE annealed. No crystal defects were observed in any of the annealed structures.

This work also produces the results shown in Figures 4 and 5. In particular, Figure 4 shows photoluminescence (PL) signals for Β, BF2 & B1SHX+ implantation with and without PAI and used in various annealing techniques. The pL signal indicates the presence of crystal damage, so lower numbers are better. It can be seen that for any annealing technique, only the BuH/situation consistently produces a detection level result. Other usj formation methods produce equally consistent low PL numbers. As shown in Figure 4, the Β^Β+ case is shown to produce very low PL numbers regardless of the annealing condition chosen. Fig. 5 shows the corresponding data for the shallow surface of the junction, which is obtained by the Flint method. It is apparent that the structure of the figure is identical to that of Figure 4, which shows the correlation between crystal damage and junction leakage. In addition, the situation only results in the most low leakage and the use of any advanced annealing conditions to achieve the margin measurement. Figure 5 illustrates the junction leakage determined by the junction photovoltage measurement. The 盥-implantation corpus and the annealing condition are a function of the relationship βΒΐ8Ηχ+, which is shown to produce a very low-level junction leakage, no matter which annealing is selected. situation. As cluster implants have fundamental advantages for semiconductors, carbon cluster species have expanded options. The choice of hydrocarbon molecular system is very similar to that of boron cluster materials. I30549.doc -28- 200849346

. The diffusion control range, ie the carbon energy of c16h10 and 10 keV carbon energy, has been implanted. The most advanced program carbon application in modern CMOS processing is used for boron for boron diffusion control

The volume is amorphous before annealing. Just expanded the government and improved the steepness of the boron curve. These features may also all use carbon clusters C/B' because of the role of carbon action. Figure 6 illustrates the carbon cluster implanted tem, which appears to have a self-amorphization feature critical to the diffusion control program. More specifically, Figure 6 is a carbon cluster 2 ΧΤΕΜ image of an implanted structure showing a self-amorphized layer of nm thickness. The implant condition is 3 keV per carbon atom and ι E1 5/cm. The front indicates the surface position. Figure 7 illustrates a carbonium/sequence that acts similar to the conventional implant procedure. In particular, Figure 7 is a quantitative curve showing the advantages of carbon clusters in controlling the diffusion of boron (BuH,) implants. When implanted, it shows no carbon and carbon conversion curves. In addition, cluster sequences have been found to have the aforementioned advantages of eliminating EOR defects. Figure 8 shows the TEM image of the shouting/carbon killing sequence program after annealing and indicates that there are no residual crystal defects. More specifically, Figure 8 shows that for (cb/CC) [B18HX+500 eV+C per carbon atom ^3 carbon atom 3 keV] both at 1615 atoms / (: 1112, 1025 (3 after 5 seconds annealing) The latest developments in CMOS solutions for stress engineering for advanced technology nodes have focused on incorporating stress into the channel to improve mobility. This is improving. The PM〇S transistor has achieved great success in its performance, incorporating the &amp; source and drain structures to place the PMOS channel under compressive stress. NMOS stress engineering is not very successful' but much work is currently in progress. The use of a nitride structure to achieve the tensile stress of the NMOS channel. Another possible way to achieve NMOS improvement is to use a SiC alloy in the source and drain to establish the proper tensile stress on the channel. The deposition method is more challenging. The present invention provides a new alternative. • The use of carbon cluster implantation to establish a SiC alloy material using a simple and straightforward procedure. In particular, the present invention provides a program formulation that has been shown in a blanket High in the layer The stress is measured by the Raman spectrum shown in Fig. 9. In particular, Fig. 9 shows the Raman spectrum result of the stress generated by the carbon cluster implantation. The amorphization characteristics are extremely advantageous for the engineering of this procedure: the recrystallization of the amorphous layer directly promotes the placement of carbon in the replacement site, which is required to achieve proper stress. Figure 19 illustrates the use of up to 800 MPa. Stress values achieved by stress values. More specifically, the stress data used for various carbon cluster implant conditions and annealing conditions, and GH/both implants are shown to produce similar stress levels. Raman spectroscopy. Summary of Advantages The cluster ion technique according to the present invention provides a production solution for the implantation of larger molecules, which contains many atoms of the desired species, rather than the traditional method of implanting one atom at a time. The technology provides a high-productivity for low-energy implants. 130549.doc -30- 200849346 High productivity, while also producing program advantages. These program features include I energy pollution, self-amorphization and easy elimination of E〇R damage. Produces and has a defect-free structure with low junctions. The butterfly and carbon box species are directly applied to the traditional enthalpy of low energy and carbon implants. In addition, new applications for NMOS stress engineering have been described for carbon cluster implants. The experimental results used were 200 mm, 11 (1 〇〇) 矽 substrates. The borax and carbon cluster materials fed into the ion source were implanted with different cluster species under various energies S. Wafers, and produce ASH/, Ci0Hx+, and + ion beams. This ion source technology preserves these larger molecules through a soft ionization process. The implants are performed on AxceHs GSD high current implanter refurbishment with ion source. For example, copending co-pending U.S. Patent Application Serial No. 10/519,699 ^ t ^ ^ 2005^9^ 14 at tf ^ ^ ^l〇n

Implantation Device and a Method of Semiconductor Manufacturing by the Implantation of Boron Hydride Cluster I〇ns", which is incorporated herein by reference. Figures 11A and 11B illustrate the advantages of amorphization using cluster implants. The implant depth associated with implantation and 3 keV carbon implantation is suitable for use in combination to reduce diffusion in the formation of usj. Figure 12 shows the SIMS volume change curve, which will implant boron after 300 eViBuH per implant The quantitative curve is compared with an annealed sample that has been implanted with fluorine or carbon clusters for diffusion control. Carbon cluster + boron mis-implantation produces a shallower and steeper junction than BUHX+ or B18H/+F alone. Figures 13A to 13C illustrate B1SHX+ Cross-section transmission electrons into and out of the sample 130549.doc -31 · 200849346 Micrograph (Χ-ΤΕΜ), which proves that there is no defect in SPE, laser and flash annealing. SPE is performed on the Mattson RTP system at 650C. The millisecond flash anneal is performed on a Mattson lamp-based system at 1300 C. The laser anneal is performed at 200 nsec, as John Borland et al. at the 16th International Conference on Ion Implantation IEEE Proceedings 96-100 It is taught in June 16-16, 2006 in Marseille, France, which is incorporated herein by reference. Figure 14A shows (a) 650C SPE; (b) 720C SPE; (c) 1075C after peak annealing Plane TEM of implanted samples of boron 500 eV, 1 el5 B18HX+. Annealing is performed on the ASM LevitorTM system, for example, as disclosed by Klaus Funk in Einladung zum RTP and lonenimplantations-Nutzergruppen-Treffen, September 25-26, 2006 The day was held in Villach, Austria, which is incorporated herein by reference. Figure 15 shows (a) before annealing on the Axcelis SummitTM RTP system; (b) after 5 s, 950C annealing, for Ge pre-amorphization, B18HX+ implantation The X-TEM of the sample. The EOR defect is clearly shown as 12 nm and is still evident after annealing. Figure 16 shows the first use of lel5, 3 kV per boron C16HX+ ion implantation, followed by lel5 for 65 run SDE Annealed X-TEM image of a B18HX+ implanted sample of 500 eV per boron. Annealing was performed on a 5 s, 950C spike on the Axcelis SummitTM RTP system. The establishment of low leakage junctions enables the use of next-generation mobile devices. One of the obvious contributors to junction leakage is the establishment and retention of EOR defects. Ge PAI produces EOR defects that cannot be eliminated by low-heat budget annealing, as illustrated in Figure 15.5 and John Borland et al. held the 16th International Conference on Ion Implantation Technology in Marseille, France, June 11-16, 2006. The discussion is discussed in the '96, which is incorporated herein by reference. Figures 3 and 4 illustrate the elimination of eor defects by replacing BF2+ or B+ with Bi 8HX + when manufacturing SDE for PMOS. In addition, Figure 11A demonstrates that implantation of Bi8Hx+ at doses suitable for establishing SDE establishes amorphization layers that almost eliminate channelization, such as 丫·

Kawasaki, T. Kuroi, K Horita, Y Ohno and M. Y0neda, Tom Horsky, Dale Jacobson, and Wade Krull at 1^(:1.11131

Meth· Phys· Res· B 237 (2005), as reported on pages 25 to 29, which is incorporated herein by reference.

The use of carbon co-implantation has recently been used to limit boron transient enhanced diffusion and to create shallower, steeper junctions. Unfortunately, c implants can also introduce e〇r defects, resulting in increased leakage to reduce junction depth. As demonstrated in Figure 6, the combination of carbon cluster implantation and boron cluster implantation produces a defect free junction. We continue to conduct carbon cluster experiments to better understand the mechanism of this effect. An insight into the reasons for this and why the use of carbon clusters is important to the continued development of USJ manufacturing is evident. As shown in FIG. 11B, Cl6H/ itself produces an amorphous layer. Therefore, the implant of Cl#/ can be amorphized. When implanted at the appropriate depth and dose, it also performs effective diffusion control, as shown in FIG. Therefore, whenever diffusion control is required, it can be used instead of C implants. Therefore, the effect in the boron diffusion control is the inhalation of void defects. During the T-print period, 'boron is considered to be paired with voids' and this mechanism is responsible for rapid boron movement through the crystal lattice. The possible system's incorporation of void-inhaled carbon amorphization effect in combination with dopant implants using carbonium causes no reason after annealing. This reasoning stems from the assumption that if the end of the range occurs in amorphous: 130549.doc -33- 200849346, the final defect is more easily removed by fire at the end of the range in the "Jijing material"; Reversible clustering used as amorphous implant in reducing NM〇s electro-crystal

It is also effective when there are defects in the body. The use of carbonium as a preliminary result of co-implantation with As4+ implants under As energy for SDE has resulted in extremely low defect junctions. The relationship between the damage amount curve and the joint leakage is illustrated by Figs. 17 and 18 for each grower and annealing condition. According to Shikou Diagram 35, B+, BF2+, and BuHx implants were performed with and without PAI and for spike, flash, laser, and spE annealing. Figure 17 shows the photoluminescence data obtained by the Accent pL method. For example, John Borland et al. held the 16th International Conference on Ion Implantation Technology Conference in the Marseille, France on June 16th, June 16th. 1 page teaches that it is incorporated herein by reference, and in FIG. 8, junction leakage as measured by the Frontier semiconductor non-contact junction photovoltage (Jpv) method is shown. Implantation without Ge PAI showed low damage and 2 leakage for all annealing sequences. In particular, the junction leakage after laser annealing using κ is 2〇 lower than 8+ or 2+. Furthermore, the use of &amp; PAI results in significantly higher leakage for all implanted species. Analysis of the self-amorphization mechanism using banana implants The pre-amorphization implant (PAI) step is typically used to avoid crystal channelization, resulting in shallower junctions. The boron cluster (BuH; 22) enables a very low energy boron implantation process for forming very shallow p-type junctions and effectively amorphizing germanium, thereby eliminating the need for PAL. The purpose of this work is to provide an analysis of the self-amorphization mechanism' and to compare various cluster ion species for self-amorphization. A SIMS quantitative curve is provided as a function of implant dose. Such information is provided by 130549.doc -34 - 200849346 for the strong evidence that channelization is carried out by the planter and broken into amorphous. Additional confirmation is provided by the use of subsequent channelized sensitive keV P+ implants to show the threshold for channelization avoidance. XTEM is also used to show the physical structure of a material as a function of implant dose and associated with channelization properties. introduction

Otoka 〇. w. Holland in Appl· Phys. Lett. 61, 3005 (1992); T. M〇〇t〇ka, 〇w H〇Uand in Appi Μ% ^ 58, 2360 (1991) t ; UAT. Mootoka ^ F. Kobayashi &gt; P. A strong ion path through the Si lattice initiates a sequence of shift events that result in defects. At a sufficiently high dose, 'crystallization 矽 undergoes crystalline amorphous system, (c_ (four) is changed. Si inner' when the free energy of the damaged crystal phase is higher than the amorphous phase] 'amorphization occurs under ion irradiation. Heat treatment to remove the bad and electrically activated dopants. The formation of the amorphous phase also inhibits ion channelization, thereby eliminating the end of the channelization of the dopant in the dopant amount curve. The procedure depends on various factors such as the sub-implant species, implant dose, and substrate temperature. For example, see Ding

Fons, T. Tokuya mA, T. Suzuki, N. Natsuaki ^ap-j. APP1. Phys. 30, 3617 (1991), which is incorporated herein by reference to 0 by lighter ions and heavier There is a difference in the degree of damage established by ion or cluster ion species. The amorphous layer established by the damage of heavy ions can be easily re-grown in the crucible to activate the more effective dopant. In the case of lighter ions, it is difficult to produce an amorphous layer below a certain dose, and the lack of car formed in such a case is stable; thus, the dopant activation is affected. For example, Plant 130549.doc -35- 200849346 B into pre-amorphized Si can achieve higher activation levels during re-growth at low annealing temperatures, such as Ε· Landi, A. Armigliato, S. Solmi, R· Kdghler, and Ε Wieser, taught in Appl. Phys. A A47, 359 (1988). Simultaneous observation of the different characteristics of the pre-amorphization in the highly damaged crystalline Si and the annealing in the inner B can be observed in K·s, Jones, R. G.

Elliman, Μ·M. Petravic, and ρ·Kringhoj Appl. Phys·

It is clear from Lett 68, 3 111 (1996) that it is incorporated herein by reference. Furthermore, when the substrate is amorphous, low temperature annealing, such as spE, provides a good opportunity to repair damage and effectively activate the dopant. The voids and vacancies are recombined, and the excessive voids form a cluster of {311} defects near 800 °C. Ion implantation into the celestial celestial layer observed a rod-like 3 11 defect, which is believed to play an important role in boron transient enhanced diffusion (ted) by providing voids during the annealing procedure. Below the specific damage threshold, the {3 11 } defects are easily decomposed at the appropriate annealing temperature. Above the different damage thresholds, these defects can form a misaligned loop that is difficult to remove. The use of pre-amorphized implant (PAi) produces a higher activation level with a lower heat budget and with minimal diffusion, for example, such as E.

Landi, A. Armigliato, S. Solmi, R. KSghler, and Ε Wieser in Appl· Phys· A A47, 359 (1988) and (7) S. Solmi, E. Landi, and F. Baruffaldi in J. Appl. Phys. 68, 3250 (1990). 〇·W· Holland, J. Narayan, D. Fathy, and SR Wilson have been reported in J. Appl. Phys. 59, 905 (1986), which is incorporated herein by reference, in the amorphous layer. During re-growth, the B atomic system is incorporated into the substitution site, thereby becoming electrically active, which is at least less than 130549.doc -36 - 200849346 1 〇 20 atoms/cm 3 in concentration. With the same compensation ^ ^ ^, the original layer exists in the amorphous layer

Thousands of excesses or lack of lines, 杳W, ^^^^ are removed to the surface and are eliminated here. After re-growth, only the remaining non-曰έ 曰έ 曰 曰 曰 曰 曰 , , 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 311 . Tian Hao/冉 Therefore, for the sake of simplification, it is assumed that after re-growth, the B atom in the amorphous region is located at the replacement position, and the defect is removed from the region, and the name gentleman a c. In the day-to-day region, the B atoms interact with the S1 gap generated by the PAI. Take D R. Tleger, W. _ called Hawthorn, EC Eisner, Μ Η ', υ.Η_]·ΜίΓ3ϋρι^η〇ΐ£^τ,· y' ΠΤ' (2006) report 'it mentions In this paper, the use of dopant-carrying molecules (such as Bi8H22) and carbon-carrying molecules (C16HX, C Η, - i θ) has been used.

丨4 x)i adds and reduces the implant depth for a particular USJ p-deletion application. The present invention is a significant improvement over the prior art and includes the establishment of an amorphous layer at a depth that includes subsequent dopant implants through carbon clustering. In accordance with the present invention, subsequent implant implantation can be clusters&apos; but can also be monomer implantation, BF2, AS2, and the like. According to an important aspect of the present invention, 'substance implant s, which usually causes damage to the crystal structure of the substrate', that is, dopants other than cluster ion dopants, such as monomer and molecular dopants, are completely included. There is no extension defect in the amorphous region established by co-implantation of carbon clusters. Any defects caused by the implantation of debris are excluded by, for example, msec annealing. The important parameters that are critical to obtaining such shallow junctions are the self-amorphization properties of both the town and the carbon town implant. Similar to carbon clusters and sheds combined planting 130549.doc -37- 200849346 According to the present invention, the diffusion of η-type dopants is similar to arsenic clusters (for example, carbon clusters or carbon clusters of Asj and phosphorus clusters (eg female P4)) Effect. Since the deletion and carbon stealing has become a mainstream manufacturing process, the important features are Β18Η22 and

The self-amorphization effect of Ci6H10, and the possibility of eliminating the standard _ straight-in to avoid the channelization effect and occupational damage, resulting in low damage and high quality joints. In this January, the amorphization characteristics of various cluster species were clarified, and the depth of the amorphous layer was evaluated using β*. We used a channel-sensitive implant (Ρ ' 200 ' ke^, lel 4 atoms/cm 2 ) to detect the degree of damage caused by implanting (9)^ and the parent side atom at 5 keV at various doses, and correlate the results with the test. This study will discuss the role of amorphization in dopant activation for USJ and stress engineering applications. Experiments The wafers used in this study were 2 〇〇 mm, n-type (1 〇〇) Shi Xi substrates. The crystal system is derived from Clusterlo, the source of Bi8H/, Ci6hx+, ^仏+, and the seeds are implanted at different energies and doses using various cluster species. Ding boundary measurements were performed on the implanted wafer prior to performing SIMS and XTEM measurements. Samples were imaged on a jE〇L 2010 FEG TEM using multi-beam imaging conditions on the axis. Results and Analysis Boron Clusters Figures 19A, B, and C show images of BUH22 implanted at 500 eV per boron atom at doses of 5el3, lel4, and lel5 atoms/cm2, respectively. For the 5el3 dose XTEM image (Figure 19A), there is no evidence of the presence of an amorphous layer. For the le 14 dose, we can clearly see the amorphous 3 cm deep pores. An amorphous layer having a thickness of about 6.2 nm is clearly present in 130549.doc -38 - 200849346. This non-lanthanide layer depth is approximately the sum of the prominent range (Rp) and the political lL (ARp) of boron at 500 eV (Rp+ARp). Figure 19 shows a 5el3 atom/cm2 (without non-lanthanide layer) B lel4 atom/cm2 (3 nm deep amorphous packing hole) C lel5 atom/Cm (6_2 nm thick amorphous layer) per boron atom 500 eV implant. The tendon refers to the surface position. For &quot; flattening the threshold dose for amorphization, implant B1SH22' and 〇 at each dose from lel3 to lei 5 atoms/cm with 〇5 let and 5 (per boron atom). Tilt and squat. The channelization sensitive P, 200 keV, and lel4 implants were performed on the wafers under distortion to determine the degree of damage established by boron cluster implantation. P is expected to penetrate deeper into the crystalline Si and is shallower in the amorphous Si. The SIMS measurement is performed to determine the p-quantity curve from which the critical dose for the amorphization threshold is determined. Figures 2 and 2B show the p SIM S quantitative curves on samples implanted with boro·5 keV and 5·〇 keV boron clusters per boron atom at various doses. Figure 20 is at 0. Tilt and squat. The SIMS quantitative curve for ρ+, 2〇〇 keV, 1014 is distorted. It can be seen from Fig. 20A that the p-quantity curves are different for boron cluster implantation using the lel3 and lel 5 doses. The depth of the lel3 dose at a P concentration of lel7 atoms/cm3 is approximately 〇·9 μπι, with respect to the 1615 system 〇7 ym. The more quantitative curve for 1 e 13 may be due to the crystallization of the p atom in the 丨. Since this low implant dose does not cause any significant damage, the p-implant is channelized and travels more into the crystal. At 1 e 1 5 dose, the side clusters were shown to establish a depth of 6.2 nm amorphous layer (Fig. 19C). The presence of an amorphous layer on top of the crystalline si dechannelizes the impinging P atom, thereby directing it out of the channel. Compared with the case of crystallization, 130549.doc -39- 200849346, the atoms leaving the guides and the Si atoms undergo multiple random collisions and lose energy before staying at a shallow depth. At a dose of 5el3, the depth of the P-variation curve at le7 atoms/cm3 is already close to 0·8 μπι. This is approximately the same as the depth reduction compared to the case of a completely amorphous system. Even at a boron cluster dose of 5el 3, there is a significant degree of crystal damage in Si. If we observe the χτΕΜ image at the dose of 5e 13 in Figure 19A, there is no clear evidence of the existence of any amorphous layer. 1 e丨4 dose (Fig. IB) ′ XTEM shows a discontinuous 3 nm deep amorphous encapsulated layer. χτΕΜ is not sensitive enough to partially pick up the amorphized S i or insufficiently recrystallize the phase. Yoshimoto et al. (12) have reported χτΕΜ and Raman measurements on flash-annealed boron samples, which claim that ΧΤΕΜ cannot pick up insufficient recrystallization crystallization phase, while Raman measurements clearly show insufficient recrystallization phase. These results indicate that in order to avoid the channelization effect in this energy range, we do not need a dose of more than 5el4 atoms/cm2. Figure 21 is a differential boron SIMS quantitative curve for Bi8h22 at various doses of 〇·5 keV implant. In particular, Figure 21 shows the Na-difference magnitude curve for the side cluster implants of 〇5 keV per boron atom. All of the curves are smoothed by performing a 5-point averaging and normalized with respect to the 丨e丨3 quantitative curve. The difference SIMS quantitative curve is completed by subtracting the quantitative curve. For example, the quantitative curve entitled "2el3 to lel3" is obtained by subtracting the 81]^8 quantitative curve from the dose of lel3 from the quantitative curve from the 2en dose. Figure 21 shows the incremental boron concentration for various doses. Obviously, we can observe the end of the channelization up to 5el3. Exceeding 5el3 is lower than the concentration of boron at the concentration of 17 atoms. There is no difference in the practice of the boron amount curve. This indication is used for 130549.doc -40- 200849346 keV boron implants, the threshold dose of amorphization is about atom / (10) 2 ° Figure 22 shows the P quantitative curve for 5 keV butterfly implantation. Although the threshold for amorphization is still about 5el3 atoms/cm2, it is not as pronounced as in the 0.5 keV implant case per rotten atom. Carbon clusters The anti-clustered materials are solid at room temperature and evaporate at the same temperature range as the boron clusters. The soft ionization system developed for the boron cluster can also cooperate with the carbon cluster vapor. Due to the narrower AMU spectrum of the carbon cluster, it produces a slightly higher beam current /7, and the carbonium ion is in the same AMU range as the boron cluster. (~2〇〇AMU) 'So the rest of the implanted system works just like deleting clusters. The figure shows the boron diffusion between the carbon cluster suppression annealing procedures, which is consistent with the use of monomeric carbon. In addition, combinations of carbon clusters, boron clusters, and conventional spike annealing techniques have been shown to produce ultra-shallow junctions for 45 nm SDE. We also have another carbon cluster material (Cl4Hx) that provides GHy molecules. With a lower AMU, the carbon equivalent energy is pushed higher so that deeper carbon clusters can be implanted. According to these results, it is desirable to characterize the self-amorphization of these carbon cluster species, and to report the results of the depth of the amorphous layer established by these species at very small implant energies and doses. A dose of about 2 to 3 kev per carbon atom at a temperature of about 5 atoms/cm 2 has been shown to be suitable for diffusion controlled implantation using low energy (0.5 keV) boron implantation. The associated line therefore shows the result of the depth of the amorphous layer established by the carbon-town species at these energies and doses. Figure 22 shows the depths of the amorphous layer at 3 and 2 keV at (3) 3 kev per carbon atom and 2 keV per carbon atom at a temperature of 2 keV/cm2, respectively. 2 claws. Arrow 130549.doc 41 200849346 The head indicates the surface position. Specifically, Figures 22A and 22B show XTEM images of 3 keV and 2 keViC16Hx implants per carbon atom at a dose of 15 atoms/cm2. The thickness of the amorphous layer at 3 keV and 2 keV is at le5 atom/cm. "The bottom and bottom are divided into 14 nm and 12 nm respectively. The established amorphous layer has a higher Rp than the equivalent implant energy of 〇·5 keV (Rp=3 4 nm, ΔRp=2.9 nm), and the entire boron amount curve is just implanted by carbon clusters. Established in the amorphous layer. Carbon clusters of QHx species at 10 keV per boron atom were implanted in the 3ei4 agent to form an amorphous layer. Figure 5 shows an image of 〇7Ηχ2χτΕΜ implanted at 1 〇 keV per carbon atom at A 3el4 atom and B atom/cm 2 . Arrows indicate the surface location. In particular, Figure 23A shows an XTEM image at &gt;14 dose. Similar to the Bi8h22 implantation, in which the channelization sensitivity, the V implant showed a certain degree of crystal damage even at a dose of about 5e丨3, and the presence of χτΕΜ was not detected in the carbon cluster implant at the dose of 3el4. Some degree of crystal damage. At 2l5 dose, a non-suspended amorphous layer (~26 nm) can be seen in Figure 23β. This depth of the amorphous layer is critical in achieving the dopant, ie placing the carbon atoms in an alternate site. Such activation is a key factor in the generation of stress within the Si lattice. Figure 24 shows the amorphous layer depth versus carbon dose (from XTEM) for various energies and doses of C7Hx and Ci6Hx. In particular, the graph shows very little energy for the =h"C7Hx species, the amorphous degree at various doses. The non-comparison of the depth of the amorphous layer produced by the C16HjC7Hx species at the same equivalent carbon energy is clearly greater than that produced by c7Hx. The yield of CiA is greater than 130549.doc -42 - 200849346. This difference basically comes from the heavier mass of carbon clusters. Comparing the same agent, but C7HX at different energies, the depth of the larger amorphous layer for higher energy can be seen. This system is derived from a deeper range and a higher horizontal dispersion. Conclusion Clusters and carbon cluster species show the self-amorphization characteristics required to eliminate PAI intrusion. Using a channelized, sensitive 200 keV P+ implant, it was found that even at a boron dose of &amp; 13 atoms/cm, there is sufficient crystal damage that reduces the channelization effect. At a dose of 5el4 atoms/cm2, the degree of damage is sufficient to avoid channelization. The depth of the amorphous layer produced by 匚 札 is greater than the depth produced by the species (a species that is heavier than the former). Amorphous layers determined for various energies and doses (CmH/, GH/) for carbon cluster ions will prove useful for applications requiring amorphization and activation. The establishment of low leakage junctions enables the use of next-generation mobile devices. One of the obvious contributors to junction leakage is the establishment and retention of EOR defects. Ge 1&gt;8 produces an EOR defect that cannot be eliminated by low thermal budget annealing, as illustrated in Figure 5 and prior work [5]. Figures 3 and 4 illustrate the use in manufacturing? ]^〇881) £ When the BF/ or B+ is replaced by Β8ΗΧ+, the e〇R defect can be eliminated. In addition, Figure 1 demonstrates the implantation of an amorphous layer that virtually eliminates channelization at doses suitable for establishing SDE, as previously reported [7]. Why does 植入^Η/implant produce a defect-free joint? Although there is no final conclusion about the mechanism of this effect, the rational system assumes the afforestation characteristics of the phylogenetic implants [2]. When implanted with a molecular cluster, it breaks the molecular bonds on the surface, releasing individual primitives +, which have the same implant volume curve as the atomic species implanted at the same rate, such as by its range RP and scattered ΔΙΙΡ characteristics 130549.doc -43· 200849346. For clusters composed of at least ten similar atoms, for example, the series of damage of adjacent atoms tends to overlap heavily, thereby releasing a higher energy density within the local volume of the Shixia. This energy release can cause localized glare of Shixia, which leads to the non-defective non-defective non-defective access + 丨曰, or the defect that is easily eliminated by annealing through at least the subsequent activation step. . The use of carbon co-implanters has proven to be very advantageous in limiting (4) variable-enhanced diffusion and in producing shallower, steeper mountain joints. Unfortunately, c implants can also introduce EOR defects, resulting in increased leakage to reduce junction depth. As shown in Figure 6, the combination of carbon clustering and implanting produces a defect-free junction. The utility of this method extends from the same mechanism for the Βΐ8Ηχ+ implantation instructions. For example, Figure UB shows that lel5, 3 keV per carbon The Ci6Hx+ implant is produced with a (10) amorphous layer. Therefore, the implant of Ci6Hx+ can be used as an amorphous implant. If C16HX+ is implanted, conductive inclusions are implanted (eg As, Bu, In , B, or BF2, or cluster ~ As4, P2, p4, c2B^2

BuH22, or any dopant-carrying molecule, is carried out at an energy such that the end of its range is in the amorphous layer, and the defect from the dopant implanted in the ship* will follow the subsequent activation procedure. save. (4) The implanted condition group used internally represents this sequence of procedures, which produces a H nm thick amorphous layer for carbon implantation, and 5(9)...b becomes + suspicion (wrong - Rp calculation) is approximately 9 _, thus It is easy to be in the amorphous layer produced by implantation. Also as shown in Figure 12, this set of implant conditions is effective for diffusion control. Therefore, whenever butterfly diffusion control is required, it can be used instead of monomer c implantation. Therefore, a preferred embodiment of the proposed sequence of procedures is as follows: 130549.doc -44- 200849346 a) implanting carbon clusters at a sufficiently large dose and energy to produce an amorphous layer that is deep enough to include subsequent n Or p-type dopant implanted E〇r; b) performing the dopant implant, preferably to create a shallow junction, such as NMOS or PMOS source/drain extension; Ο using low thermal budget annealing activation Dopants such as flash, laser or SPE annealing, or spike annealing. It has been set that the action of carbon in the diffusion control of boron is the inhalation of void defects. The TED period 1 is paired with the gap and this mechanism is responsible for rapid boron movement through the crystal lattice. In addition to the amorphization advantages described above, these gettering effects may further facilitate the lack of EOR defects observed after annealing. The relationship between the damage amount curve and the junction leakage is illustrated by Figures 17 and 18 for various implant and annealing conditions. As illustrated, 8+, BF2+, and BuH/implantation were performed with and without &amp; PAI and for spike, flash, laser, and spE annealing. Fig. 17 shows the photoluminescence poor material obtained by the above Accent hole method, and Fig. 18 shows the junction leakage measured by the Franti semiconductor non-contact junction photovoltage (jpv) method. The absence of Ge pAi 植入^Η/implantation shows low damage and leakage for all annealing sequences. In particular, the junction leakage after laser annealing is lower than b+ or depression. In addition, the use of Ge ΡΑΙ results in significantly higher leakage for all implanted species. Many modifications and variations of the present invention are possible in the description. Therefore, it is to be understood that the invention may be practiced otherwise than as described in the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS These and other advantages of the present invention can be readily understood by reference to the above specification and drawings, in which: the ion mass spectrum of the figure, which uses boron having an excitation voltage of 2 〇 kv Cluster source. Figure 2 represents the 81]^8 volume change curve for the monomer B + implant, with and without the Ge ΡΑΙ program. A slight channelization was observed for the ideal 811/implant. Figure 3 represents an XTEM image of an implanted and implanted laser, flash, and Β??£ annealed Βι8Ηχ+ implant. No crystal defects were observed in any of the annealed structures. Figure 4 illustrates the photoluminescence materials used for B+, bf/, and 18 implanted samples. The various annealing steps employed and did not use Ge PAI. Figure 5 shows the junction leakage determined by the Fleming semiconductor method as a function of the implantation procedure and the annealing condition. The BisH/line is shown to produce a very low junction leakage level regardless of the annealing condition chosen. Figure 6 is an image of a carbon cluster of the implanted structure showing an automatic amorphization of 14 (five) thickness. The implant condition is a dose of 3 kev and 1 E15/cm2 carbon per carbon atom. Arrows indicate the surface location. Figure 7 is a SIMS quantitative curve showing the advantages of carbon clusters in controlling the diffusion of boron (Βΐ8Ηχ+) implants. When implanted, it shows no carbon and carbon. Figure 8 shows the X-butyl EM image without BisH/I损坏r damage after 1 second at 1〇25, which is implanted at 5 〇〇eV per carbon atom after implantation of 3 keV Ci6Hx+ per carbon atom. In, both are at lel5 atoms/cm2. Figure 9 shows the Raman spectroscopy results showing the stress generated by the implantation of carbon clusters after annealing to 130549.doc -46-200849346. Figure 1 illustrates the stress information used for various carbon cluster implant conditions and annealing conditions. Both CkH/ and C7HX+ implants were shown to produce similar stress levels. The data is from UV Raman spectroscopy. Fig. 11A shows the transmission TEM after implantation of le5 in the Shixi wafer and b18Hx+ per 5 〇〇 eV of boron. The implant produced a 6.2 nm amorphous layer. Figure 11B shows a C16H/implant of 1 E15, 3 keV per carbon, which produces a 14 nm amorphous layer. Figure 12 shows a SIMS quantitative curve comparing the implant-de-amplification curve after per boron 3〇〇 eViB18Hx+ implantation with an annealed sample implanted with fluorine or carbon clusters for diffusion control. Figure 13 A shows a cross-sectional transmission electron micrograph (X-TEM) of the BuH/implanted and annealed samples demonstrating that the SPE annealing is defect free. Figure 13B is similar to Figure 13A but is used for lasers. Figure 13C is similar to Figure 13A but is used for flash annealing. Figure 14A shows a plan view TEM of a 500 eV, lel5 B18Hx+ implanted sample per boron after 650C SPE annealing. Figure 14B is similar to Figure 14A, but after 720C SPE annealing. Figure 14C is similar to Figure 14A, but after the 1075C spike has been annealed. Figure 15A shows X-TEM 用于 for Ge pre-amorphized, B18HX+ implanted samples prior to annealing. Figure 15B is similar to Figure 15A, but after annealing at 5s, 950C on the Axcelis SummitTM RTP system. Figure 16A shows the first use of le5, C16HX+ ion implants per boron 3 kV 130549.doc -47-200849346, and then on the 20 nm scale using ui5 for 65 nm 8 、, B 丨 Ηχ 每 per 500 乂Annealed image of the incoming sample. Figure 16B is similar to Figure 16A, but on a 5^ calendar scale. Fig. 1 is an explanatory view showing crystal lattice damage of germanium crystals measured by a known photoluminescence technique. Fig. 18 is an explanatory view showing the junction leakage current by the JPV Fleming method. Fig. 19A shows implantation of 5 〇〇 eV atoms per boron at 5el3 atoms/cm2 (without a non-crystal layer). Fig. 19B is similar to Fig. 19A, but the boron implant is le4 atoms/cm2 (3 nm deep amorphous encapsulation). Fig. 19C is similar to Fig. 19A, but the boron implant is le5 atom/cm2 (6.2 nm thick amorphous layer). Arrows indicate the surface location. Figure 20 shows that the eight series are tilted and squatted. Distorted 811^8 variable curve for 1&gt;+, 2〇〇1^乂. Figure 20B is similar to Figure 20A but is under lel4. Figure 21 is a differential boron SIMS quantitative curve for BuH22 at various doses of 〇·5 keV implant. Figure 22A shows C16HxiXTEM images implanted at 5 keV per carbon atom at (5)2. The depths of the amorphous layers at 3 and 2 keV are 14 nm and 12 nm, respectively. The arrows indicate surface positions. Figure 22B is similar, but It is at 2 keV per carbon atom. Figure 23A &quot;XTEM image of CtHx implanted at 10 keV per carbon atom at 3el4 atoms/cm2. Arrows indicate surface position. 130549.doc -48- 200849346 Figure 23B is similar to Figure 23A, but at 2el5 atoms/cm2. Figure 24 shows the thickness of the amorphous layer at various doses for very little energy of the C16HX and C7HX species. .1 130549.doc -49-

Claims (1)

200849346 X. Patent application scope: 1. A method for implanting a semiconductor, comprising the following steps: a. Establishing a CnHm vapor or gas stream, wherein the reading melon is an integer such that n&gt;lj.m&gt; b· The m gas is in the ion source of the ion implanter; C· forms the ion of CnHx +, wherein the lanthanide is a positive integer or zero; d· accelerates the plasma to the kiss by the depth RP (4) On the substrate; e. implanting one of the AnRzHx+ forms of dopant ions to a depth r, Rp and wherein A is an internal or p-type dopant, such as As, P, B, In or Sb, And wherein R represents a molecule whose atomic composition is not harmful to the ruthenium crystal formation procedure, such as Si' Ge, F4C, and η, X and Ζ are positive integers greater than or equal to zero; 2 6 7 8· 9. as claimed in claim 1 The method of claim 1 is as the method of claim 1 such as the method of claim 4, such as the method of claim 1 such as the method of claim 1 such as the method of claim 1 such as the method of claim 1 • the method of claim 1 Method 1 of claim 1 • Method f of claim 1 f. Activating the (etc.) dopant with a heat treatment to form The method of the first aspect, wherein CnH/C is 6Hx+ or c?Hx+, wherein AnRzHx+ is β18Ηχ+. wherein AnRzHx+ is carborane, wherein AnRzHx+ is c2Bl〇Hx wherein AnRzHx+ is BF2+. wherein AnRzHx+ is b Among them AnRzHx^B10Hx+, where AnRzHx+ is b2qhx+, where AnRzHx+ is b2Hx+, where AnRJV^B5H/. AnRzHx+ is p7h/. 130549.doc 200849346 13· The method of Shiming item 1, wherein AnRzHx+ is As7Hx+. The method of claim 1, wherein AnRzHx+ is (CH3)5P7+. 15. The method of claim 1, wherein AnRzHxy^, P7(SiMe3)3+. 16. The method of claim 1, wherein AnRzHx+ is As7 (SiH3)3+ 〇7. An implant method for semiconductor fabrication, which comprises the following steps: • ~ AnRzHx vapor or gas flow, and wherein a is a η or p-type change in a stone, such as As, ρ , Β, In or Sb, and wherein R represents a molecule whose atomic composition is not harmful to the ruthenium crystal formation procedure, such as Sl, Ge, or C, and n, X, and z are positive integers greater than or equal to zero; b. An ion source that is introduced into an ion implanter by steam or gas ; 幵 v into AbLzHx containing dopant ions, wherein &amp; is a positive integer, X is a positive integer or zero, Lz contains one or more of the components of Rz, where z is greater than or equal to one of zero Integer; d· accelerates the plasma to a n or p-type germanium substrate at a depth Rp'; e· establishes a CkHf vaporization A or gas stream, where k and f are integers such that k &gt;i and pan 0; f· Introducing the vapor or gas into an ion source of an ion implanter; g· forming an ion of CkHx, wherein X is a positive integer or zero; h· accelerating the plasma to a depth Rp&gt;Rp of the germanium substrate, i. Activating the (etc.) dopant with a heat treatment to form a p_n junction. 18• An implant method for semiconductor fabrication comprising the steps of: a) establishing a CnHm vapor or gas stream, wherein n&m is an integer such that n &gt; 1 and m &gt;0; 130549.doc -2 - 200849346 b. introducing the vapor or gas into the ion source of an ion implanter; c. forming a CnHx + ion, wherein x is a positive integer or zero; d. accelerating the plasma to a n at a depth RP * p-type germanium on the substrate; e. implanting the dopant in the form of Sb4+ to the depth of Rw 19. f. The dopant is activated by heat treatment to form a p_n junction. A method for implanting a semiconductor, comprising the steps of: a. establishing an AnRzHx vapor or gas stream, and wherein the human is an internal dopant, such as As, P, B, (d) Sb, and wherein R represents A molecule's atomic component crystal forming procedure is harmless, such as Sl, Ge, or C, and n, parent and z are positive integers greater than or equal to zero; b. Introducing σ 瘵 或 or gas into an ion implantation In the ion source of the device; c• forming a dopant-containing ion Sb4+; d· accelerating the plasma to a n*p-type germanium substrate at a depth RP; constructing a CkHf vapor a or gas stream, wherein k and f are An integer such that ubiquitous 0; f· introduces a child vapor or gas into the ion source of an ion implanter; g· forms a CkHx ion, wherein the lanthanide is a positive integer or zero; h• accelerates the plasma to The germanium substrate has a depth RP &gt; RP, and it is known to activate the (etc.) dopant with a heat treatment to form a pn junction. 130549.doc