200848191 九、發明說明： 【發明所屬之技術領域】 本發明係關於—種藉由雷射而對於例如各種片材、電路 基板、半導體晶圓、玻璃基板、陶竟基板、金屬基板、半 導體田射等之發光或受光元件基板、Μ舰S(Micr〇 Meehans System ’微電子機械系統）基板、半導體封 裝、布、皮、、紙、薄臈材料等被加工物，進行例如切割、 開孔等加工之雷射加工方法及雷射加工品。 【先前技術】 最近，Ik著電氣、電子機器之小型化等，零件之小型 化、高精細化得到推進，對於各種材料之外形加工而言， 亦要求加工精度達到±50 μιη或其以下之高精細、高精度 化:使用雷射光對被加工物進行切割、開孔等加工時，具 有而速性、微細性、切宝I ; σ供 刀口J面口口貝、加工形狀自由度等優 點，自上述觀點考慮，-般而言，金屬、玻璃、樹脂、半 導體、陶瓷等材料均可廣泛應用。 然而’使用雷射進行之材料加工，係藉由被加工物因吸 收光而產生之溶融或分解反應而實施，故而，被加工物之 加工面側(雷射光之照射面側)之雷射加工部分周邊會附著 石厌等刀解物。因此’為了除去該分解物，必須實施被稱作 醇擦拭、清洗或除膠渣加工之後製程。 尤/、疋在被加工物之加工面側之切割端面周邊部，因 有刀解物向上方飛散’故其堆積量亦較多。該照射側之分 解物殘渣之堆積量與雷射光之功率成比例地增加。因此， 131400.doc 200848191 右為了進行鬲速切割而以大功率對被加工物照射雷射光 時，刀解物殘渣之堆積量增加，後製程中難以除去分解物 殘渣。當牢固地附著有分解物殘渣時，一般係使用高錳酸 钾水溶液等進行濕式除膠潰加玉，但此時，亦會因廢液處 理而導致裱境負荷増大。作為避免產生上述問題之方法， 亦提出併用YAG基本波與水噴之方法。然而，若使用該方 法，則邊緣部分之分解物之堆積量會因水噴之冷卻效果而200848191 IX. Description of the Invention: [Technical Field] The present invention relates to laser, for example, for various sheets, circuit substrates, semiconductor wafers, glass substrates, ceramic substrates, metal substrates, semiconductor fields For example, cutting or opening, etc., such as light-emitting or light-receiving element substrates, squid S (Micr〇Meehans System 'micro-electro-mechanical system) substrates, semiconductor packages, cloth, leather, paper, and thin materials Laser processing methods and laser processed products. [Prior Art] Recently, Ik has been promoting the miniaturization of electric and electronic equipment, etc., and the miniaturization and high definition of parts have been promoted. For various materials, the machining accuracy is required to be ±50 μm or less. Fine and high-precision: When laser cutting is used to cut and open a workpiece, it has the advantages of speed, fineness, and cut-off I; σ for the J-face of the knife edge, and the freedom of processing shape. From the above viewpoints, materials such as metals, glass, resins, semiconductors, and ceramics can be widely used. However, the material processing by laser is performed by the melting or decomposition reaction of the workpiece due to absorption of light, so that the laser processing of the processed surface side (the side of the irradiated surface of the laser light) of the workpiece is performed. Some of the surrounding areas will be attached with stone knives and other knives. Therefore, in order to remove the decomposition product, it is necessary to carry out a process called alcohol wiping, cleaning or desmear processing. In particular, the sputum is scattered on the peripheral portion of the cut end face on the machined surface side of the workpiece, so that the amount of deposit is also large. The deposition amount of the decomposition residue on the irradiation side increases in proportion to the power of the laser light. Therefore, 131400.doc 200848191 Right When the laser beam is irradiated with high power to the workpiece at the high speed, the amount of the residue of the disintegration material increases, and it is difficult to remove the decomposition residue in the post-process. When the residue of the decomposition product is firmly adhered to, the wet degumming and adding jade is generally performed using a potassium permanganate aqueous solution or the like, but at this time, the environmental load is also increased due to the waste liquid treatment. As a method for avoiding the above problems, a method of using YAG basic wave and water jet is also proposed. However, if this method is used, the amount of decomposition of the edge portion will be due to the cooling effect of the water spray.
減小，但是會引起無法適應吸濕性材料等材料選擇性問 題。 專利文獻1:日本專利特開2002-343747號公報 【發明内容】 [發明所欲解決之問題] 本發明係鑒於上述之先前技術問題而完成者，其目的在 於：提供-種藉由雷射光加工被加工物時，能夠有效減少 分解物污染被加工物表面，生產效率良好且容易地進行雷 射加工之雷射加工方法。又，其目的亦在於提供-種藉由 上述雷射加工方法而獲得之雷射加工品。 L解決問題之技術手段] =請案發明者等人，為了解決上述之先前技， :於::力;工方法、以及雷射加工品進行了研討。結果發 兄错由採用以下構成可眚银μ、+、n k 明。 現上述目的’從而完成本發 131400.doc 200848191 之雷射加工方法，且一面於照射部分之附近吸引除去照射 上述雷射光時所產生之分解物，一面進行上述雷射加工、。 若對被加工物照射雷射光，則因該照射部分之被加工物 之溶融或分解反應，會有分解物產生且飛散於周圍。上述 • 方法中，一面於該照射部分附近吸引除去分解物一面進行 . 雷射加工，故而能夠抑制分解物附著於被加工物之加工面 側’並可減少表面污染。 c 較好的是，對與上述雷射光之照射方向同軸之方向或者 、 雷射光加卫之行進方向，自後方實施上述吸引除去。例 如，將被加工物固定於台上掃描雷射光，或者使雷射光固 疋而對口進行掃描，藉此進行被加工物之切割加工，此時 分解物向加工之行進方向（掃描方向）之後方飛散。故而了 如上述方法，藉由對與雷射光之照射方向同軸之方向、或 者雷射光加工之行進方向，自後方進行吸引除去可更加 有效地除去分解物。 u 較好的是，對上述照射部分或其附近喷射氣體，使上述 刀解物向吸引除去之方向擴散。藉此，能夠提高分解物之 吸引除去之效率’且能夠進一步減少被加工物之加工面側 之污染。 •作為上述氣體，較好的是使用壓縮空氣。 作為上述被加工物，可使用片材、電路基板、半導體晶 圓、玻璃基板、陶究基板、金屬基板、半導體雷射之發光 或受光元件基板、MEMS基板、半導體封裝、布、皮、 紙 '或者單層或多層薄膜材料。就如上所述之各種被加工 131400.doc 200848191 物而言，於雷射加工時其加工面側亦會附著有分解物而產 生表面污染。然而，若是伴隨分解物吸引除去之本發明之 雷射加工方法，則可減少該表面污毕， ’木 故本發明對於該等 各種被加工物亦可適當地應用。 作為上述雷射光，可使用ArF準分子雷射、KrF準分子雷 射、XeCl準分子雷射、YAG雷射之第三諧波或者第四： 波、YLF或者YV〇4之固體雷射之第三諧波或者第四諧波、 fIt is reduced, but it can cause problems such as the inability to adapt to material selectivity such as hygroscopic materials. [Patent Document 1: Japanese Patent Laid-Open Publication No. 2002-343747] SUMMARY OF INVENTION [Technical Problem] The present invention has been made in view of the above-mentioned prior art problems, and an object thereof is to provide laser light processing In the case of a workpiece, it is possible to effectively reduce the laser processing method in which the decomposition product contaminates the surface of the workpiece, and the production efficiency is good and the laser processing is easily performed. Further, it is also an object of the invention to provide a laser processed product obtained by the above laser processing method. L. Technical means to solve the problem] = The inventor of the request, etc., in order to solve the above-mentioned prior art, :: force; work methods, and laser processed products were discussed. As a result, the following errors can be made by using the following composition: silver μ, +, n k. The above-mentioned object is achieved by the laser processing method of the present invention, and the above-described laser processing method is performed while sucking and removing the decomposition product generated when the laser light is irradiated in the vicinity of the irradiation portion. When the workpiece is irradiated with the laser light, the decomposition product is generated and scattered around the workpiece due to the melting or decomposition reaction of the workpiece. In the above method, the decomposition product is sucked and removed in the vicinity of the irradiated portion, and the laser processing is performed, so that the decomposition product can be prevented from adhering to the processed surface side of the workpiece and the surface contamination can be reduced. Preferably, c is suction-removed from the rear in a direction coaxial with the irradiation direction of the above-described laser light or in a traveling direction in which the laser light is applied. For example, the object to be processed is fixed on the stage to scan the laser light, or the laser beam is fixed and the port is scanned, thereby performing the cutting process of the workpiece, and then the decomposition object is directed to the processing direction (scanning direction). Flying. Therefore, as described above, the decomposition product can be removed more effectively by suctioning and removing from the rear direction in the direction coaxial with the irradiation direction of the laser light or the traveling direction of the laser beam processing. Preferably, the gas is sprayed on or near the irradiated portion to diffuse the above-mentioned blade in the direction of suction and removal. Thereby, the efficiency of suction and removal of the decomposition product can be improved, and the contamination on the processed surface side of the workpiece can be further reduced. • As the above gas, it is preferred to use compressed air. As the workpiece, a sheet, a circuit board, a semiconductor wafer, a glass substrate, a ceramic substrate, a metal substrate, a semiconductor laser, or a light-receiving element substrate, a MEMS substrate, a semiconductor package, a cloth, a skin, or a paper can be used. Or single or multi-layer film material. As described above, in the case of various processed materials, the surface of the processed surface side is also attached with decomposition products to cause surface contamination during laser processing. However, in the laser processing method of the present invention in which the decomposition product is sucked and removed, the surface can be reduced, and the present invention can be suitably applied to the various workpieces. As the above-mentioned laser light, ArF excimer laser, KrF excimer laser, XeCl excimer laser, third harmonic of YAG laser or fourth: solid laser of wave, YLF or YV〇4 may be used. Third harmonic or fourth harmonic, f
U ^ S雷射、半導體雷射、光纖雷射或者二氧化碳氣 射。 為了解決上述問題，本發明之雷射加卫品可藉由上述雷 射加工方法而獲得。 [發明之效果] 本發明之雷射加工方法係一面於照射冑分之附近吸引除 去照射雷射光時所產生之分解物，—面進行，故分解物不 會附者於被加物之加工面側，因此能夠減少污染加工 面。其結果，可提供一種能夠生產效率良好且容易地進行 雷射加工之雷射加工方法。 a另外，因為除去分解物，亦可省略例如濕式除污點等後 製程。而i ’亦不要後製程中所需之廢液處理，亦可有助 於減小環境負#。而且’因能夠減少分解物之附著，故可 使雷射光高功率化，且可謀求提高生產量。 【實施方式】 …以下’參照圖式對於本發明之實施形態之雷射加工方法 進仃》兄明。圖1係模式性地表示本實施形態之雷射加工方 131400.doc 200848191 法之情況的概略圖。U ^ S laser, semiconductor laser, fiber laser or carbon dioxide. In order to solve the above problems, the laser edging article of the present invention can be obtained by the above-described laser processing method. [Effects of the Invention] The laser processing method of the present invention is performed by sucking and removing the decomposition product generated when the laser beam is irradiated in the vicinity of the irradiation target, and the surface is formed, so that the decomposition product is not attached to the processed surface of the object to be added. Side, thus reducing contamination of the machined surface. As a result, it is possible to provide a laser processing method capable of efficiently performing laser processing with ease. a Further, since the decomposition product is removed, a post-process such as a wet decontamination point may be omitted. And i' does not need to deal with the waste liquid required in the post-process, and it can also help to reduce the environmental negative #. Further, since the adhesion of the decomposed material can be reduced, the laser light can be increased in power and the throughput can be increased. [Embodiment] Hereinafter, a laser processing method according to an embodiment of the present invention will be described with reference to the drawings. Fig. 1 is a schematic view showing a state of the laser processing method 131400.doc 200848191 of the present embodiment.
如圖1所示，本實施形態之雷射加工方法中，一方面使 用吸引喷嘴5，對於向被加工物3照射雷射光】時所產生之 分解物4進行吸引除去，-方面進行雷射力…關於吸引 除去’較好的是，、沿雷射光1之照射方向之同軸方向而實 施、或者自雷射W之加:η之行進方向（掃描方向）的後方而 實施。分解物4有向掃描方向之後方飛散之傾向故而， 自上述方向實施吸引除去’能夠提高除去效率。而且，較 好的是，吸引噴嘴5以與雷射光i之掃描速度相同之速度進 行移動。 上述吸引噴嘴5，例如連結於真空泵等上。但是，本發 明中，只要能夠吸引分解物4即可，並無特別限定，可使 用先前眾所周知之多種類型。關於吸引能力，較好的是 100 L/min以上，更好的是300 L/min以上。若吸引能力不 足100 L/min，則有時無法充分除去分解物4,且無法抑制 被加工物3之加工面側之表面污染。而且，吸引能力越大 則刀解物4之除去率越高，作為吸引能力之上限值’—般 而吕較好的是1〇〇〇 L/min以下。 而且，較好的是，對上述照射部分或其附近噴附氣體 14 ’使上述分解物4向吸引除去之方向擴散。更具體而 言’當如圖1所示進行雷射加工時，由噴附喷嘴6，自加工 之行進方向之後方、且為吸引噴嘴5之後方，向被加工物3 之加工面噴附氣體14。分解物4係沿被加工物之加工面而 向加工之行進方向之後方擴散，因此，藉由自上述方向喷 131400.doc -10- 200848191 附氣體14，使分解物4向吸引噴嘴5之方向擴散。藉此，能 夠k焉刀解物4之除去效率。作為氣體14並無特別限定， 可使用例如壓縮空氣或氦氣、氮氣、氧氣等。As shown in Fig. 1, in the laser processing method of the present embodiment, the suction nozzle 5 is used, and the decomposition product 4 generated when the laser beam is irradiated onto the workpiece 3 is sucked and removed, and the laser beam is applied. It is preferable that the suction removal is performed in the coaxial direction of the irradiation direction of the laser light 1 or in the rear direction of the laser W: the traveling direction (scanning direction) of η. The decomposition product 4 tends to scatter in the scanning direction, and the removal and removal from the above direction can improve the removal efficiency. Moreover, preferably, the suction nozzle 5 is moved at the same speed as the scanning speed of the laser light i. The suction nozzle 5 is connected to, for example, a vacuum pump or the like. However, in the present invention, as long as the decomposition product 4 can be attracted, it is not particularly limited, and various types well known in the art can be used. Regarding the attraction ability, it is preferably 100 L/min or more, more preferably 300 L/min or more. If the suction capacity is less than 100 L/min, the decomposition product 4 may not be sufficiently removed, and surface contamination of the processed surface side of the workpiece 3 may not be suppressed. Further, the larger the suction ability is, the higher the removal rate of the knife 4 is, and the upper limit of the suction ability is generally -1 L/min or less. Further, it is preferable that the gas 14' is sprayed on the irradiation portion or the vicinity thereof to diffuse the decomposition product 4 in the direction of suction and removal. More specifically, when the laser processing is performed as shown in FIG. 1, the spray nozzle 6 is sprayed with gas onto the processed surface of the workpiece 3 from the rear side in the traveling direction of the processing and after the suction nozzle 5. 14. The decomposition product 4 is diffused in the traveling direction of the workpiece along the processed surface of the workpiece. Therefore, by dissolving the gas 14 from the above-mentioned direction, the gas is discharged from the direction of the liquid to the suction nozzle 5 in the direction of the suction nozzle 5 by spraying 131400.doc -10- 200848191 diffusion. Thereby, the removal efficiency of the knife 4 can be obtained. The gas 14 is not particularly limited, and for example, compressed air or helium gas, nitrogen gas, oxygen gas or the like can be used.
又，本發明中，於雷射光1之同一軸上向雷射加工部分 噴附辅助氣體並不好。先前之雷射加工方法中，當使用Z 如一氧化碳雷射進行加工時，為了促進反應而於雷射照射 方向之同軸上噴附氧氣等輔助氣體。然而，若噴附輔助氣 體，則因該氣體壓力而使所產生之分解物之擴散受到抵 制且π留於加工部分。結果，有時會助長被加工物之表 面污染，從而造成惡劣影響。 本發明之雷射加工方法可適用於例如切割加工、標記 (markmg)、開孔加工、槽加工、劃線（似ibing)加工、或者 仏正（trimming)加工等分解物會飛散之所有形狀之加工 中本么明對於該等加工而言，較好的是適用於切割加工 中。而且’作為切割加I，可使用半切穿、全切穿中之任 一種0 雷射光1，係藉由雷射振盪機而振盪，由傳送路徑内之 、兄反射且經由聚光透鏡而極小地彙聚於其焦點位 置八備加工所需之高能量而由加工噴嘴2照射。雷射光1 係自垂直於Χ-γ台7上之被加工物3的方向照射。此時，實 施切割加工時，在# , 、 係糟由使雷射照射位置於規定之加工線上 :動而進订切割加工。作為雷射光1之移動機構，除了 Χ_γ 台掃描以外’亦可列舉電解掃描（galvan。scan)、光罩成像 (刪khnaging)加工等眾所周知之方法。 131400.doc 200848191 上述雷射光1並無特別限制，可根據加工方法而適當地 選擇。而且，反應過程會根據所使用之雷射光源而有差 異，例如，振盪波長為193 nm之ArF準分子雷射、248 nm 之KrF準分子雷射、308 nm之XeCl準分子雷射、355 nmi YAG雷射之第三諧波、266 nmiYAG雷射之第四諧波、同 樣、YLF、YV〇4等固體雷射之第三、四諧波、 曰 400 rnn以上之波長之雷射但經過多光子吸收過程之後亦能 夠吸收紫外、線區域之光的Ti : s雷射等係藉由採用剝離之 蝕刻而進行加工，而振盪波長為9.3 mm或10.6 mm之二氧 化碳雷射係利用採用紅外吸收之發熱現象而進行蝕刻。採 用紫外吸收之剝離與採用紅外吸收之熱加工中，反應過程 不同，但因兩者中均產生分解物，因此，任一者之加工過 程中均存在表面附著有分解物之問題。 本發明中加工之被加工物3，可列舉例如圖2中所示之偏 光薄膜15。偏光薄膜15係藉由於聚乙烯醇（pVA，p〇iyvii^ alcohol)薄膜11之雙面黏附一對三乙醯纖維素（Μ。， triacetyl cellulose)薄膜1〇而成。進而，於一方之丁ac薄膜 10側，經由丙烯酸系黏著劑層9而設有由聚對苯二甲酸乙 二酯（PET，P〇lyethylene terephthalate)薄膜構成之隔離膜 13。於另一方之TAC薄膜1〇側設有表面保護薄膜12。該表 面保護薄膜12係藉由於聚對苯二甲酸乙二酯（pET)薄臈8上 没有丙烯酸系黏著劑層9而構成，丙烯酸系黏著劑層9成為 與另一方之TAC薄膜1 〇的黏附面。 而且，作為被加工物3，除了上述偏光薄膜15以外，亦 131400.doc -12- 200848191 可使用其他類型’只要能夠藉由雷射光進行加工即可，並 無特別限定。具體而言，可列舉例如：各種片材、電路基 板、半導體晶圓、玻璃基板、陶瓷基板、金屬基板、半導 體雷射等之發光或受光元件基板、MEMS(Micro Electro Mechanical System)基板、半導體封裝、布、皮、紙、單 層或者多層薄膜材料等。 作為各種片材，可列舉例如：聚醯亞胺系樹脂、聚酯系 樹脂、環氧系樹脂、胺基甲酸酯系樹脂、聚苯乙烯系樹 脂、聚醯胺系樹脂、聚碳酸酯系樹脂、或含填充劑之聚乙 烯系、聚丙烯樹脂等之高分子薄膜或不織布。而且，亦可 列舉藉由對該等樹脂進行延伸加工、含浸加工等而獲得物 理或者光學性能者。而且，亦可列舉將銅、鋁、不鏽鋼等 之金屬片或者、上述聚合物片及/或金屬片直接或者經由 黏接劑等積層而成者。 而且，作為電路基板，可列舉：單面、雙面或者多層可 撓印刷基板，由玻璃環氧或陶瓷、金屬芯基板等構成之剛 性基板，形成於玻璃或者聚合物上之光電路或者光電混合 電路基板等。 而且，作為單層或者多層薄膜材料，可列舉各種黏著薄 膜、光學薄膜等。 關於雷射之加工條作，可根據被加工物3之類型等而適 當设定。例如，當將本發明之雷射加工方法用於切割加工 中時，其切割速度（加工之行進速度）可根據被加工物3之物 性而適當設定。本發明係使用雷射光丨而進行之加工，因 131400.doc -13- 200848191 此’與先前利用刀具或模具進行之切割加工相比， 切割速度。當使用上述偏光薄膜15作為被加工物3時，: 割速度較好的是10〜3〇〇 m/min，更好的是50〜15〇 m/min刀 右㈣速度不足1G m/min，則會引起生產性降低之問題。 另:方面，若切割速度超過则m/min，騎引起果之吸 引能力無法吸收單位時間之分解物產生量之問題。 j射光1之集光徑’可根據被加工物3之加工類型而適當 設定。進行切割加工時，切割寬度與雷射光k集光心 致:致。因此，藉由調節集光徑，可控制切割寬度。關於 集光徑（切割寬度）’通常而言較好的是5〇〜咖㈣，更好 的是100〜300 _。若集光徑不足5() _，則可能會導致切 割速度變小。另-方面，若集光徑超過5⑼_，則會導致 由被加工物獲得產品之效率降低。 (； 雷射光i之功率密度，可根據被加工物3之物性、切割加 工時之切割速度而適當設定。被加工物3之光吸收率取決 於雷射光!之波長。雷射光丨可藉由選擇_體或結晶而 使自紫外線至近紅外線之波長振盪。因此，藉由使用與被 加工物3之光吸收波長相應之雷射光1，能夠以較低之功率 被度高效地進行加工。例如，當被加工物3為上述偏光薄 膜15時，較好的是50〜700 W。 實施例 以下，利用實施例，對本發明進行詳細說明，但本發明 只要不超出其宗旨，則不受以下實施例之限制。 (實施例1) 131400.doc -14- 200848191 [被加工物] 本只施例中，作為被加工物，係使用具有上述圖2所示 之構成之偏光薄膜。亦即，於pVA薄膜之—面上設有表面 保4薄膜，而於另一面上經由丙烯酸系黏著劑層（厚度為 24 而積層有隔離膜之構造。纟面保護薄膜係由對厚度 為38 μιη之PET基材上塗佈黏著劑層而成之薄膜構成。作 為黏著劑層，係使用厚度為24㈣之丙烯㈣黏著劑。隔 離膜係由厚度為38 μηΐ2ΡΕΤ薄膜構成。而且，pvA薄膜之 厚度約為22 μηι。 [雷射光照射裝置] 使用之雷射光照射裝置如下所述。 雷射光源：二氧化碳雷射 雷射波長· 10.6 mm 最高輸出：250 W [雷射光之照射條件] 於下述條件下，對偏朵壤胳香—& _ T雨尤/專膜實施半切穿加工。而且，吸 引喷嘴係配置於雷射光之播y古a 疋 < 舞彳田方向之相反側的方向。而 且，吸引喷嘴係以與雷射氺夕# »一 由身Τ九之知拖速度相同之速度移動。 功率：40 W 點徑：120 mm 脈衝寬度：9 ms 重複頻率：20 kHz 掃描速度：400 mm/s 吸引喷嘴徑：4.5 mm必 -15· 131400.doc 200848191 真空泵排氣能力：500 L/min 吸引喷嘴一照射部間距離·· 5 mm 切割深度·· 325 μπι 經過半切穿加工之後，雷射加工時所產生之分解物被吸 引至吸引喷嘴之側，不會附著於被加工物表面，被吸引除 去。偏光薄膜之半切穿部周邊之分解物殘渣，以半切穿部 为為中心而附著於寬度為5〇〇 mm以下之範圍内。 (實施例2)Further, in the present invention, it is not preferable to spray the assist gas to the laser processing portion on the same axis of the laser light 1. In the prior laser processing method, when processing is performed using Z, such as a carbon monoxide laser, an auxiliary gas such as oxygen is sprayed on the coaxial line in the direction of laser irradiation in order to promote the reaction. However, if the auxiliary gas is sprayed, the diffusion of the generated decomposition product is resisted by the gas pressure and π remains in the processed portion. As a result, it sometimes contributes to the surface contamination of the workpiece, which causes adverse effects. The laser processing method of the present invention can be applied to all shapes in which decomposition products such as cutting, markmg, boring, groove processing, scribing (like ibing) processing, or trimming processing are scattered. In the processing, it is preferable for the processing to be suitable for the cutting process. Moreover, as a cutting plus I, any one of the half-cutting and full-cutting 0 laser light 1 can be used, which is oscillated by a laser oscillator, reflected by the brother in the transmission path and minimally via the collecting lens. The high energy required for the eight-part processing at the focus position is concentrated by the processing nozzle 2. The laser light 1 is irradiated from a direction perpendicular to the workpiece 3 on the Χ-γ stage 7. At this time, when the cutting process is performed, the cutting process is performed by moving the laser irradiation position to a predetermined processing line. As the moving mechanism of the laser light 1, in addition to the scanning of the Χ_γ stage, well-known methods such as electrolytic scanning (scanning) and reticle imaging processing are also exemplified. 131400.doc 200848191 The above laser light 1 is not particularly limited and may be appropriately selected depending on the processing method. Moreover, the reaction process will vary depending on the laser source used, for example, an ArF excimer laser with an oscillation wavelength of 193 nm, a KrF excimer laser with a wavelength of 248 nm, a XeCl excimer laser with a wavelength of 308 nm, and a 355 nmi The third harmonic of the YAG laser, the fourth harmonic of the 266 nmiYAG laser, the third, the fourth harmonic of the solid laser such as YLF, YV〇4, and the laser of the wavelength above 400 rnn, but after many The Ti:s laser, which is capable of absorbing light in the ultraviolet and line regions after the photon absorption process, is processed by etching using a peeling process, and the carbon dioxide laser system having an oscillation wavelength of 9.3 mm or 10.6 mm utilizes infrared absorption. Etching is performed by heating. In the thermal processing using ultraviolet absorption and the thermal processing using infrared absorption, the reaction process is different, but since both of them generate decomposition products, there is a problem in that any one of the processes has a surface-decomposed decomposition product. The workpiece 3 processed in the present invention may, for example, be a polarizing film 15 as shown in Fig. 2 . The polarizing film 15 is formed by laminating a pair of triacetyl cellulose film on both sides of a film 11 of a polyvinyl alcohol (pVA, p〇iyvii^ alcohol). Further, on the side of the butyl ac film 10, a separator 13 made of a film of polyethylene terephthalate (PET) is provided via the acrylic pressure-sensitive adhesive layer 9. A surface protective film 12 is provided on the other side of the TAC film. The surface protective film 12 is formed by the absence of the acrylic adhesive layer 9 on the polyethylene terephthalate (pET) sheet 8, and the acrylic adhesive layer 9 is adhered to the other TAC film 1 surface. Further, as the workpiece 3, in addition to the above-mentioned polarizing film 15, 131400.doc -12-200848191 may be used as long as it can be processed by laser light, and is not particularly limited. Specifically, for example, various types of sheets, circuit boards, semiconductor wafers, glass substrates, ceramic substrates, metal substrates, semiconductor lasers, and the like, light-emitting or light-receiving element substrates, MEMS (Micro Electro Mechanical System) substrates, and semiconductor packages are exemplified. , cloth, leather, paper, single or multi-layer film materials. Examples of the various sheets include a polyimide resin, a polyester resin, an epoxy resin, a urethane resin, a polystyrene resin, a polyamide resin, and a polycarbonate resin. A polymer film or a non-woven fabric such as a resin or a polyethylene-based or polypropylene resin containing a filler. Further, physical or optical properties obtained by stretching, impregnation, or the like of the resins may be mentioned. Further, a metal piece such as copper, aluminum or stainless steel or the above-mentioned polymer sheet and/or metal piece may be laminated directly or via an adhesive or the like. Further, examples of the circuit board include a single-sided, double-sided or multi-layer flexible printed circuit board, a rigid substrate made of glass epoxy or ceramic, a metal core substrate, or the like, and an optical circuit or photoelectric hybrid formed on a glass or a polymer. Circuit board, etc. Further, examples of the single layer or multilayer film material include various adhesive films and optical films. The processing of the laser can be appropriately set depending on the type of the workpiece 3 and the like. For example, when the laser processing method of the present invention is used in a cutting process, the cutting speed (the traveling speed of the processing) can be appropriately set in accordance with the physical properties of the workpiece 3. The present invention is processed using a laser diaphragm as a result of the cutting speed of 131400.doc -13-200848191 compared to previous cutting operations using a tool or a mold. When the above-mentioned polarizing film 15 is used as the workpiece 3, the cutting speed is preferably 10 to 3 〇〇 m/min, more preferably 50 to 15 〇 m/min, and the right (four) speed is less than 1 G m/min. This can cause problems with reduced productivity. On the other hand, if the cutting speed exceeds m/min, the riding ability of the fruit can not absorb the amount of decomposition product per unit time. The light collecting path ' of the light of the j light 1' can be appropriately set depending on the type of processing of the workpiece 3. When cutting, the cutting width and the laser light collection are: Therefore, the cutting width can be controlled by adjusting the collecting path. The light collecting path (cutting width) is generally preferably 5 〇 to 咖 (4), more preferably 100 to 300 _. If the collector path is less than 5 () _, the cutting speed may be reduced. On the other hand, if the collected light path exceeds 5 (9) _, the efficiency of obtaining the product from the workpiece is lowered. (The power density of the laser light i can be appropriately set according to the physical properties of the workpiece 3 and the cutting speed during the cutting process. The light absorption rate of the workpiece 3 depends on the wavelength of the laser light. The laser diaphragm can be used by The wavelength from the ultraviolet ray to the near-infrared ray is oscillated by selecting the _body or the crystal. Therefore, by using the laser light 1 corresponding to the light absorption wavelength of the workpiece 3, it is possible to perform processing with high efficiency at a low power. For example, When the workpiece 3 is the polarizing film 15, it is preferably 50 to 700 W. EXAMPLES Hereinafter, the present invention will be described in detail by way of examples, but the present invention should not be construed as (Example 1) 131400.doc -14- 200848191 [Materials] In the present embodiment, a polarizing film having the configuration shown in Fig. 2 described above is used as the workpiece, that is, in pVA. The surface of the film is provided with a surface protective film of 4, and the other side is provided with an acrylic adhesive layer (having a thickness of 24 and a laminated film is provided. The protective film of the face is made of a PET substrate having a thickness of 38 μm). on A film composed of a cloth adhesive layer is used as the adhesive layer, and a propylene (iv) adhesive having a thickness of 24 (four) is used. The separator is composed of a film having a thickness of 38 μηΐ 2 。. Moreover, the thickness of the pvA film is about 22 μηι. Laser light irradiation device] The laser light irradiation device used is as follows: Laser light source: Carbon dioxide laser laser wavelength · 10.6 mm Maximum output: 250 W [Laser light irradiation conditions] Under the following conditions, The fragrant-& _T rain/special film is subjected to a half-cutting process. Moreover, the suction nozzle is arranged in the direction of the opposite side of the direction of the ray field, and the suction nozzle is Laser 氺 # # » One is moved by the same speed as the speed of the body. Power: 40 W Point diameter: 120 mm Pulse width: 9 ms Repeat frequency: 20 kHz Scanning speed: 400 mm/s Nozzle diameter: 4.5 mm must -15· 131400.doc 200848191 Vacuum pump exhaust capacity: 500 L/min Aspirating nozzle-infrared distance·· 5 mm Cutting depth·· 325 μπι Decomposition during laser processing after half-cutting The side that is attracted to the suction nozzle does not adhere to the surface of the workpiece, and is sucked and removed. The residue of the decomposition material around the half-cut portion of the polarizing film adheres to the width of 5 mm or less around the half-cut portion. Within the scope of this. (Embodiment 2)
ϋ 本實施例中，除了於下述加工條件下進行切割（全切穿） 加工以外，其餘均使用與上述實施例1中相同之方法進行 雷射加工。 [雷射光之照射條件] 功率：100 W 點控：120 mm 脈衝寬度：20 ms 重複頻率；20 kHz 掃描速度：400 mm/s 吸引噴嘴徑：8 真空泵排氣能力：500 L/min 吸引噴嘴一照射部間距離：5 mm 、工匕切口’U口工之;[灸’雷射加玉時所產生之分解物被吸引 至吸引噴嘴之側’不會附著於被加工物表面，被吸引除 去。偏光溥膜之切割部周邊之分解物殘液，以切割部分為 中^而附著於覓度為1〇〇 mm以下之範圍内。 131400.doc -16 - 200848191 (實施例3) [被加JL物] 係使用聚醯亞胺薄膜（商 杜邦公司製造）。 本實施例中，作為被加工物， 品名·· kapton、厚度為125mm、 [雷射光照射裝置] 使用之雷射光照射裝置，與上述實施例1中相同 [雷射光之照射條件] ;下述條件下，對聚醯亞胺薄膜進行切割（全切穿）加 而且吸引噴嘴係配置於雷射光之掃描方向之相反側 的方向&且，吸引噴嘴係以與雷射光之掃描速度相同之 速度移動。ϋ In the present embodiment, laser processing was performed in the same manner as in the above-described first embodiment except that the cutting (full cut through) processing was performed under the following processing conditions. [Laser light irradiation conditions] Power: 100 W Point control: 120 mm Pulse width: 20 ms Repeat frequency; 20 kHz Scanning speed: 400 mm/s Suction nozzle diameter: 8 Vacuum pump exhaust capacity: 500 L/min Suction nozzle The distance between the illuminating parts: 5 mm, the work cuts 'U's work; the [moxification 'the decomposition of the product when the laser is added to the jade is attracted to the side of the suction nozzle' does not adhere to the surface of the workpiece, is attracted to be removed . The residual liquid of the decomposition product around the cut portion of the polarizing film is attached to the cut portion as a range of 1 mm or less. 131400.doc -16 - 200848191 (Example 3) [JL added] A polyimide film (manufactured by DuPont) was used. In the present embodiment, the laser light irradiation device used as the workpiece, the kapton, the thickness of 125 mm, and the [laser light irradiation device] is the same as that in the above-described first embodiment [irradiation conditions of laser light]; the following conditions Next, the polyimine film is cut (full cut) and the suction nozzle is disposed in the direction opposite to the scanning direction of the laser light, and the suction nozzle is moved at the same speed as the scanning speed of the laser light. .
功率·· 40 W 點徑：120 mm 脈衝寬度·· 9 ms 重複頻率；20 kHz 知描速度：400 mm/s 吸引噴嘴徑·· 8 mm# 真空泵排氣能力：500 L/min 吸引噴嘴一照射部間距離：5 mm 經過切割加工之後，雷射加工時所產生之分解物被吸引 至吸引喷嘴之側，不會附著於被加工物表面，被吸引除 去。聚醯亞胺薄膜之切割部周邊之分解物殘渣，於光學顯 微鏡中無法確認。 (比較例1) 131400.doc -17- 200848191 虚本比車乂例中，除了不吸引除去分解物以外，其餘均使用 =亡^實施例1中相同之方法對偏光薄膜進行半切穿加 …果，可確認，偏光薄膜之切割部周邊，有大量的分 *勿蜮渣以半切穿部分為中心而附著於寬度為5 mm以上之 範圍内。 心 【圖式簡單說明】 圖1係用於說明本發明之實施形態之被加工物的帝 工之概略圖。 田Ϊ加 圖2係模式性地表示作為上述被加工物之偏光 面圖。 寸嗎的剖 【主要元件符號說明】 1 雷射光 2 加工喷嘴 3 被加工物 4 分解物 5 吸引噴嘴 6 噴附噴嘴 7 X-Y台 8 薄膜 9 丙烯酸系黏著劑層 10 TAC薄膜 11 聚乙烯薄膜 12 表面保護薄膜 13 隔離膜 14 氣體 15 偏光薄膜（被加工物） 131400.doc 18Power·· 40 W Dot diameter: 120 mm Pulse width·· 9 ms Repeat frequency; 20 kHz Knowing speed: 400 mm/s Suction nozzle diameter·· 8 mm# Vacuum pump exhaust capacity: 500 L/min Inter-part distance: 5 mm After the cutting process, the decomposition product generated during laser processing is attracted to the side of the suction nozzle, and does not adhere to the surface of the workpiece, and is sucked and removed. The residue of the decomposition product around the cut portion of the polyimide film could not be confirmed in the optical microscope. (Comparative Example 1) 131400.doc -17- 200848191 In the case of the imaginary example, the polarizing film was half-cut through the same method as in Example 1 except that the decomposition product was not attracted and removed. It was confirmed that there was a large amount of the periphery of the cut portion of the polarizing film, and the slag was adhered to the width of 5 mm or more centering on the half-cut portion. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic view for explaining an embodiment of a workpiece according to an embodiment of the present invention. Fig. 2 is a schematic diagram showing a polarizing surface as the workpiece. Section of the inch [Explanation of the main components] 1 Laser light 2 Processing nozzle 3 Processing object 4 Decomposition material 5 Attracting nozzle 6 Spraying nozzle 7 XY table 8 Film 9 Acrylic adhesive layer 10 TAC film 11 Polyethylene film 12 Surface Protective film 13 Isolation film 14 Gas 15 Polarized film (processed material) 131400.doc 18