200846742 九、發明說明： 【發明所屬之技術領域】 本發明提供一種彩色石夕基液晶（liquid crystal on silicon，LCoS ) 顯示裝置，尤指一種反射式彩色LCoS顯示裝置。 【先前技術】 LCoS顯示裝置是反射式液晶投影機(ref|ectiVe LCoS projector) 與背投影電視(rear-projection television)的關鍵技術。LCoS顯示裝 置最大之優點係在於可大幅降低面板生產成本以及體積輕、薄、 短、小，同時另具有高解析度以及低功率等優點。LCoS顯示裝置 與一般薄膜電晶體液晶顯示裝置(thin film transistor-liquid crystal display ’ TFT-LCD)不同之處在於TFT-LCD上下兩面皆是以玻璃作 為基底(substrate) ’但LCoS顯示面板僅有上面採用玻璃，底下的 基底則是以半導體材料（例如矽）為主，因此，LC〇s顯示面板之 製程其實是結合傳統液晶顯示器與半導體互補式金氧半導體 (complementary metal-oxide semiconductor，CMOS)製程的技術。 LCoS顯示裝置的主要結構可分為光源模組、LC〇s顯示面板、 分光合光系統等。一般而言，LCoS顯示器可依照光學引擎之設計 分為二片式(three-panel)及單片式(singlepanel)兩大類。三片式光學 引擎係將光源所產生之光束經分光稜鏡分為紅、藍、綠光後，再 分別將光束投射入三片LCoS面板，最後將投射出的三色影像經 過合光糸統加以結合，以形成彩色影像。單片式光學引擎是利用 5 200846742 色轉輪Morwheel)將白光形成循序的紅、藍、綠光，並將此光學 三原色光與驅動程式產生的紅、藍、綠畫面，同步形成分色影像， 再藉由人眼視覺暫留的躲’最後在人·生純的投影晝面。 由上述可知’ #LCgS顯示面板上很少製作具有不同顏色彩 色濾光層的彩色像素_，其原因在於個無機分色膜之微型彩 光片在衣作上有技術難度〶與製作成本高等瓶頸，因此傳統 單^ L〇>S顯示面板無法將自絲或白光源分光成綠、紅、藍光之 光學三原色或其他色絲產生彩色晝面，而是必須仰賴前述的色 轉輪或分光合域統並搭配複數片LCqS顯示硫才能顯示出彩 色旦面所以，#LC〇s顯示裝置必須包含多片顯示面板 及複雜的光料擎，大陳高了製作成本，也無法滿足縮小產品 尺寸的市場需灰。 1 Gale等人所提出的美國專利案明侧號曾提及利用黃 声H或青綠色等分色卿縣製作穿透式色彩編碼彩色遽光 _ :由於不_色分色膜__擇比低，因此必須使用繁複 刻的二刻製程’並配合特定抗滋姓 色分色膜堆此=k 的黃色、青色或青綠 號，揭〜、外 另提出美國專利案第7，121，669 顯示裝置上製作彩色像素陣列，其製作方式係於 片進行_定義對該彩色渡光 Q系傻隹具上方形成一較厚的透明層間層 6 200846742 c __iv—d 騎騎邱絲二層彩色減 光片。接著對第二層彩㈣光片綱，_在其上方形成另一厚、 透明層間層。如此重複數次製程，而於透板上製作出至少包 =二層彩色遽光片加上三層厚透明層間層之厚度的彩色滤光層結 構。因此’ Iisaka所教導的製程繁複，導致製作程本提高，且彩色 慮光層結構鱗度較厚，亦無法滿足縮销示裝置尺寸之需求。 上柯知’細减缺乏以簡單製程而在轉縣板上製作 夕色微型彩色遽光片之先進技術，因此於單一 lc〇s顯示裝;置上 製作出彩色像素_之技術仍為#界不斷探討之議題。 【發明内容】200846742 IX. Description of the Invention: [Technical Field] The present invention provides a color crystal on silicon (LCoS) display device, and more particularly to a reflective color LCoS display device. [Prior Art] The LCoS display device is a key technology of a reflective liquid crystal projector (ref|ectiVe LCoS projector) and rear-projection television. The biggest advantage of the LCoS display unit is that it can significantly reduce the panel production cost and is light, thin, short, and small, while also having high resolution and low power. The difference between the LCoS display device and the thin film transistor-liquid crystal display (TFT-LCD) is that the upper and lower sides of the TFT-LCD are made of glass as the substrate 'but the LCoS display panel has only the upper surface. Glass is used, and the underlying substrate is mainly made of a semiconductor material (for example, germanium). Therefore, the LC〇s display panel process is actually a combination of a conventional liquid crystal display and a semiconductor complementary metal-oxide semiconductor (CMOS) process. Technology. The main structure of the LCoS display device can be divided into a light source module, an LC〇s display panel, a light splitting and combining system, and the like. In general, LCoS displays can be divided into two types: three-panel and single-panel according to the design of the optical engine. The three-piece optical engine divides the light beam generated by the light source into red, blue and green light after splitting, and then respectively projects the light beam into three LCoS panels, and finally passes the projected three-color image through the combined light system. Combine to form a color image. The monolithic optical engine uses the 5 200846742 color wheel Morwheel to form white, red, blue and green light, and synchronizes the optical three primary colors with the red, blue and green images generated by the driver to form a color separation image. Then hide by the human eye, and finally hide in the projection of the human being. It can be seen from the above that the color pixels with different color filter layers are rarely produced on the #LCgS display panel, because the micro color film of the inorganic color separation film has technical difficulties and high production cost. Therefore, the conventional single-layer L>S display panel cannot split the optical primary light or the other colored filaments from the silk or white light source into green, red or blue light, but must rely on the aforementioned color wheel or photosynthetic unit. The domain system is combined with a plurality of LCqS to display sulfur to display the color surface. Therefore, the #LC〇s display device must contain multiple display panels and a complex light material, which is high in production cost and cannot meet the size reduction. The market needs to be gray. 1 The US patent case filed by Gale et al. mentions that the use of yellow sound H or cyan, etc., to produce transmissive color-coded color twilight _: due to non-color separation film __ selection ratio It is low, so it is necessary to use the complicated two-step process' and match the yellow, cyan or blue-green number of the specific anti-game color separation film stack = k, and the other US Patent No. 7,121,669 shows A color pixel array is fabricated on the device, and the manufacturing method is performed on the film. _Defining a thick transparent interlayer layer formed above the color light Q-studded cookware. 200846742 c __iv-d riding the Qiu Si two-layer color dimming sheet. Next, for the second layer of color (four) light sheet, _ is formed on top of another thick, transparent interlayer. The process is repeated several times, and a color filter layer structure having at least a thickness of two layers of color calender sheets plus three layers of thick transparent interlayers is formed on the transparent plate. Therefore, the process taught by Iisaka is complicated, resulting in an increase in the production process, and the color light-weight layer structure is thicker and cannot meet the demand for the size of the under-reduction device. Shangkezhi's lack of advanced technology for making Xia's miniature color enamel film on the transition board with a simple process, so it is displayed on a single lc〇s; the technology for making color pixels is still #界Constantly explore the topic. [Summary of the Invention]
⑤本發明之主要目的’在於提供—種具有彩色像素_之LCoS 顯示震置及·作方法，以改善^LQ)S顯示裝置需要複雜光學 引擎與夕片LCoS顯示面板之問題。 根據本發明之申請專利範圍，揭露了一種具有彩色像素陣列之 LCoS顯不裝置之製作方法。首先提供一半導體基底，然、後在半導 體基底上依序形成—第—反射層、—第—彩色濾光層、一第二反 射層以及一第二彩色濾光層。在第二彩色濾光層上形成一第一圖 ^ ^具有一第一曝像區域。接著移除由第一圖案層所暴露出 之"卩分第二彩色濾光層與第二反射層以形成一第一開口。然後移 '、λ弟圖案層，在該第一開口内形成一第一平坦層，以平坦化 200846742 半導體基底表面。 根據本㈣之申輸_，另提供—魏仰稀置 Γ=先提供一半導趙基底’再於半導體基底上依序形成- 彩色濾光層一第二反射層、-第二繼 先曰、υ射層以及—第三彩色濾光層。然後，於第三 慮光層上形成-第-圖案層，其包含—第—曝像區域，接著進行The main object of the present invention is to provide an LCoS display shake and method for color pixels to improve the problem of complex optical engines and LCOS display panels. According to the patent application scope of the present invention, a method of fabricating an LCoS display device having a color pixel array is disclosed. First, a semiconductor substrate is provided, and then a first-reflective layer, a first-color filter layer, a second reflective layer, and a second color filter layer are sequentially formed on the semiconductor substrate. Forming a first image on the second color filter layer has a first exposure area. Then, the second color filter layer and the second reflective layer exposed by the first pattern layer are removed to form a first opening. Then, the ', λ pattern layer is moved, and a first flat layer is formed in the first opening to planarize the surface of the semiconductor substrate of 200846742. According to the application of (4), the other provides - Wei Yang thin Γ = first provide half of the guide base 'and then sequentially formed on the semiconductor substrate - color filter layer - second reflective layer, - second succeeding 曰, The enamel layer and the third color filter layer. Then, a -first pattern layer is formed on the third light-receiving layer, which includes a -first exposure area, and then proceeds
-第:_製程’移除由第—圖案層暴露出之部分第三彩色渡光 層與第三反射層’而於第三彩色濾光層中形成_第—開口。接著， 在第三彩色濾光層上形成-第二圖案層，其包含—第二曝像區 •開口或第二開口中形成一第一平坦層 域。然後進行-第二_製程，移除由第二_層暴露出之部分 第三彩色滤光層與第三反射層，以形成—第二開σ。最後，於第 —— H-R 0 日 _ 1 *rr i 、、 « 根據本發明之申請專利範圍，又另揭露一種^必顯示裝置， 其包含有：一半導體基底，其表面定義有複數個次像素，形成一 彩色像素陣列；一第一反射層、一第一彩色濾光層、一第二反射 層、一第二彩色濾光層、一第三反射層以及一第三彩色濾光層依 序叹於δ亥半導體基底上。該弟二彩色濾、光層與該第二反射層具有 一第一開口，對應於該半導體基底上之一第一次像素，而該第三 彩色濾光層與該第三反射層具有一第二缺口開口，對應於該半導 體基底上之該第一次像素與一第二次像素。 8 200846742 • "由於本發義在各桃濾光層之間設置反射層，並以反射層當 作衫色濾、光層之間的_停止層，因此可利用敍刻製程而於各次田 像素中疋義出不同的彩色濾光層圖案，以簡單製程製作出L⑽ 顯示面板上的彩色像素陣列。 【實施方式】 請參考第1圖至第7圖，第1圖至第7圖為本發明具有彩色像 籲素陣列之LCoS顯示裝置製作方法之第一實施例的示意圖。在本實 施例中，LCoS顯示裝置係為—反射式彩色Lc_示装置。首先 如第1圖所示，提供一料體基底1〇，例如為一石夕基 複數個次像素電路及電子元件（未顯示），接著，依序於半導體; 底1〇表面形成一第一反射層12、一第一分色膜Μ、一第一緩衝 層16、一第二反射層18以及一第二分色膜20。其中第一與第二 反射層12、18可包含具導電性之金屬材料，使得第-反射層12 癱可以作為次像素電極使用。第一分色膜M與第二分色膜π係分 别用作第-必色濾光層與一第二彩色滤光層使用，可包含高反 射膜層或分色膜材料。此外，第一與第二分色膜14、如較佳為無 ，分色臈’可包含二氧化鈦與二氧化料無機材料以不同比例堆、 且而成再者’在第二分色膜2〇表面也可選擇性形成一第二緩衝 層22。值得注意的是，第一與第二緩衝層16、18係分別設於第一 二色膜14與第二反射層〗8之間以及第二分色膜μ與後續製作之 -第三反射層之間’主要作用係在之後的侧製程中提供緩衝功 能，其材料可分別包含相同於第一與第二分色膜ΐ4、Μ之材料， 9 200846742 .於第-分__材 色 一緩衝層16。然而，第—與 予又’而將夕出來的部分視為第 -與第二〜M M 輯層16、22柯包含不同於第- a :: process ' removes a portion of the third color light-emitting layer and the third reflective layer ' exposed by the first pattern layer and forms a first opening in the third color filter layer. Next, a second pattern layer is formed on the third color filter layer, which includes a second exposure region, or a first flat layer is formed in the opening or the second opening. Then, a second-process is performed to remove a portion of the third color filter layer and the third reflective layer exposed by the second layer to form a second opening σ. Finally, in the first - HR 0 _ 1 * rr i , , « according to the patent application scope of the present invention, there is further disclosed a display device comprising: a semiconductor substrate having a plurality of sub-pixels defined on its surface Forming a color pixel array; a first reflective layer, a first color filter layer, a second reflective layer, a second color filter layer, a third reflective layer, and a third color filter layer sequentially Sigh on the δ hai semiconductor substrate. The second color filter, the light layer and the second reflective layer have a first opening corresponding to one of the first sub-pixels on the semiconductor substrate, and the third color filter layer and the third reflective layer have a first The two notch openings correspond to the first sub-pixel and the second sub-pixel on the semiconductor substrate. 8 200846742 • "Because this statement is to provide a reflective layer between each peach filter layer, and to use the reflective layer as the color filter between the color filter and the light layer, it can be used in each process. Different color filter layer patterns are defined in the pixels of the field, and a color pixel array on the L(10) display panel is produced by a simple process. [Embodiment] Please refer to Figs. 1 to 7, and Fig. 1 to Fig. 7 are schematic views showing a first embodiment of a method for fabricating an LCoS display device having a color image array. In the present embodiment, the LCoS display device is a reflective color Lc_display device. First, as shown in FIG. 1, a substrate base 1 is provided, for example, a plurality of sub-pixel circuits and electronic components (not shown), followed by semiconductors; a first reflection is formed on the surface of the bottom 1 The layer 12, a first dichroic film, a first buffer layer 16, a second reflective layer 18, and a second dichroic film 20. The first and second reflective layers 12, 18 may comprise a conductive metal material such that the first reflective layer 12 can be used as a sub-pixel electrode. The first dichroic film M and the second dichroic film π are used as the first-per-color filter layer and a second color filter layer, respectively, and may include a high-reflection film layer or a dichroic film material. In addition, the first and second dichroic films 14, preferably absent, may comprise titanium dioxide and a dioxide material inorganic material stacked in different ratios, and further formed in the second dichroic film 2 A second buffer layer 22 can also be selectively formed on the surface. It should be noted that the first and second buffer layers 16, 18 are respectively disposed between the first dichroic film 14 and the second reflective layer 8 and the second dichroic film μ and the subsequently produced third reflective layer. The main function between the two functions is to provide a buffering function in the subsequent side process, and the materials may respectively contain the same material as the first and second color separation films ΐ4, Μ, 9 200846742. In the first-minute __ color-buffering Layer 16. However, the first and the second part are regarded as the first - and the second ~ M M layer 16, 22 contains different from the first
：X =:實施例中，也可省略製作第一與第二緩衝層μ 接將弟二反射層18製作於第-分色膜14上。 接著，如第2圖所示，於半導體基底ι〇上形成一第 =其可包含有機材料或紘材料，經由微影製程而於光阻材二 上&義出-第-曝像區域26，可對應於半導體基錢上之至少一 第—次像素46 (顯示於第6圖）。接著，以第-圖案層24當作餘 刻遮罩’移除經由第-圖案層24之第一曝像區域％所暴露出的 部分第二缓衝層22、第二分色膜2()以及第二反射層18。在本實 施例中，由於第二緩衝層22與第二分色膜2〇包含相同的材料， 因此第二緩衝層22與第二分色膜2〇能經由一道侧製程而移 除，暴露出部分第二反射層18。之後’再以不同_劑移除被第 二分色膜20所暴露出的第二反射層18，直至暴露出第一緩衝層 Μ或第一分色膜14 ’而於第二分色膜2〇與第二反射層18中形成 :第-開口 28。在本實施例中’移除部分第二反射層18之步驟可 能會同時移除少量的第-緩衝層，而使餘刻停止在第一緩衝層 16中，並不會減少第-分色膜14的厚度。然而，由於第二反射^ 10 200846742 =^=料2—分_或第—緩衝層關應有較高 1幾乎:移二下:人右能咖制第二反射層18的蝕刻製程，使 緩材料，則可不需在第—分色膜14上製作第一 内填接移除第一圖案層24,再於第一開口烈 * ^ ， 设於第一分色膜14或第一緩衝層16之 "，/、中第一平坦層30可包含相 緩衝層16的材料，h ” 币刀已膜14 A弟 忐，^ $謂方式於轉縣底10表面全面形 7磨方式移除多餘的第—平坦層3G材料。在其他實 削玎剎"t之二'又有在第二分色膜2〇表面製作一第二緩衝層22， —用n於第—分色膜2()表面的第—平坦層 當作第二緩衝層22。 ^考第4圖’於第—平坦層％與第二緩衝層22或第二分色 鉍袓、面形成一第二反射層32以及一彩色濾光層，包含分色膜 二Z W t所7^之第三分色膜34。同樣地，第三反射層32的材 2目同於第-或第二反射層12、18之材料，例如包含金屬材料 反射^及導f性之材料。第三分色膜34較佳包含無機分 、；\例如—氧化鈦、二氧化矽等，以不同比例堆疊而成。 阳於第三分色膜34上製作一第二圖案層36，其可由有機或光 德F 所域。第二圖案層36包含—第二曝像區域38及第一曝 品可、、、工由微影製程定義出來，並暴露出第三分色膜34， 11 200846742 ， 其中第二曝像區域38可對應於半導體基底ι〇上之至少一第二次 像素48 (顯示於第6圖）。 然後，如第5圖所示，利用第二圖案層36當作遮罩而進行一 蝕刻製程，移除被第二圖案層36所暴露出的部分第三分色臈％ 與第二反射層32,直至暴露出第二緩衝層22或停止在第二分色膜 20表面，而在第三分色膜34與第三反射層32中形成一第二開口 _ 仙。如第6圖所示，移除第二圖案層36，於暴露出的第二分色膜 2〇或第二緩衝層22上形成一第二平坦層42。第二平坦層42的製 作方法可如冗積方式於轉體基底1〇表面沉積形成，同時填入= 二開口 40内，之後再以研磨方式移除多餘的部分，以使半導體基 底10的表面平坦。如此，便完成本發明彩色LC〇s顯示裝置上彩 色;慮光層的製作’形成彩色像素陣列44。 藝在本實施例中，當光源通過第一、第二與第三分色膜14、2〇、 34時，會被分色膜材料碱砂不同波長範圍之光線射出，例如 分別為綠光、紅光及藍光’因此當光線由彩色像素陣列私上方入 射後，會分別被最上層的第-、第二或第三反射層12、18、^反 射’穿過最上層的第-、第二或第三分色膜14、2〇、34而分別形 成綠光、紅光及藍光。所以，半導體基底丄峰面上具有第一、第 二或第三分色膜Μ、2〇、34的部分可相域成彩色像素陣列私 -的第—次像素46、第二次像素48及第三次像素50⑷刻製程後 -剩下的第三分色膜34即對應於第三次像素5〇)，並利用充♦像素 12 200846742 、 m .電極的第一反射層12與M〇s電晶體或其他元件相連接來產生來 色影像。 / 接著，如第7圖所示，另提供一透明基板52，例如為一玻璃基 板或石英基板，其表面包含—透明導電層56，例如為—氧化姻锡 層。將半導體基底lGJi具有彩色像素陣列44之表面朝向透明基 板52，並使透明基板52與半導體基底1〇平行相對而組合，例如 _ 以框膠將透明基板52固定於半導體基底1〇之上，再於透明基板 52與半導體基底10之間灌入液晶分子，形成液晶層％，便完成 本發明LCoS顧示面板80之製作。此外，為了控制液晶分子的排 列方向，可分別於透明基板52與半導體基底10的内側表面形成 一配向膜74、78 (配向膜78即形成於第二平坦層42之上）。 值付注意的是’在本發明的第一實施例中，係於同一 Lc〇s顯 示面板80上製作出具有至少三種顏色的彩色像素陣列私，應用於 早片式LCoS顯不裔中’因此在半導體基底10上需要設置二芦八 色膜（第一、第二與第三分色膜14、20、34)，並經由二次蝕刻而 在分色膜中形成深度不一的第一開口 28與第二開口 4〇，以使第 一、第二與第三分色膜14、20、34分別在不同次像素中成為半導 體基底10上最表層的分色膜，而使光線以不同顏色射出。然而， 若需要更多顏色的彩色像素陣列，則可在第三分色膜34上另形成 _ 其他分色膜，並重複類似製程。 13 200846742 ， '^者本毛明形色像素陣列之製作方法亦可應用於使用二片以 上的LCoS顯示器中，例如在同—片⑽顯示面板上製作出口有 兩種顏色的彩色像素陣列，如包含綠色/紅色或綠色/藍色的彩⑽ 素陣列’再配合具有其他顏色據光層的1^必顯示面板與光學引 擎’來產切色影像。此外，若要在—片lCqS顯示面板上製作只 具有兩種顏色神色騎_，觸本發法，難需進行: 刻製程’而使面板絲具有不同的分色断可。以本發明之 春帛-f域為例’具錢色彩色柯板的方法 僅舄包含第1圖至第3圖之製程。 由於本發明主要提供於同—LCgS顯示面板上製作％色像素矩 陣之製作方式，因此像素電極或像素電路的製作方法並非本發明 重』。、而，為了能使項者瞭解本發明彩色像素矩陣製作方法與 像素電路製程之結合與應用，將於第8至10圖中簡單說明包含接 觸插塞元件之彩色像素矩賴作方法。為便於說明，圖式中各元 件係沿用第1至第6圖之元件符號。 清參考第8圖’首先提供一半導體基底10，於其上定義出複數 個次像素’以形成-像素陣列，例如第一次像素46、第二次像素 48以及第二次像素5〇。半導體基底1〇絲包含複數個像素電路 (圖未不），分別設於各次像素内。然後，於半導體基底⑺表面 形成一第-反射層12，其包含-像素電極58以及至少一接觸元件 . ⑼’例如—連接塾，設於第二或第三次像素48、5G内（圖中顯示 14 200846742 出第二與第三次像素48、5G内分別具有—接觸元件6G)，且像素 電極58對應於第一次像素46 ’不與接觸元件60相接觸。像素電 極58與接觸元件60的形成方式可包含先在半導體基底1〇表面全 面形成第一反射層12，之後進行一微影暨蝕刻製程，以製作出像 素電極58與接觸元件60。接著，於半導體基底1〇表面形成一第 —分色膜14，其表面可包含一緩衝層（圖未示）。 請參考第9圖，進行另—微影暨蝕刻製程，於接觸元件6〇上 方之部分第一分色膜14内形成接觸洞62，再於接觸洞62之内填 入導電材料，以形成接觸插塞64於第一分色膜14内。接著，如 第ίο圖所示，於半導體基底10表面形成一第二反射層18，其圖 案對應於第-次像素46以及第二次像素48，並包含一接觸元件 66 ’設於第三次像素5〇内的接觸插塞62上方，並藉由接觸插塞 64而與接觸元件60電連接。讀，於半導體基底1〇表面全面形 成一第二分色膜2〇，並於其中形成一接觸插塞68，電連接於接觸 元件66與接觸元件6〇。 ' 請參考第11圖，然後於半導體基底1〇表面塗佈-第一光阻層 作為第-圖案層24 ’其包含第一曝像區域26，對應於第一次像; 46。然後進行—糊製程，經由第-曝像區域26侧暴露出的第 -分色膜2G與第二反射層18，直至第—分色膜14表面，而於第 -分土膜20中形成_第—開口 28，設於第—次像素你内。而剩 下的第二反射層18位於第二次像素48之部分，則視為第二次像 15 200846742 素48之像素電極7〇’其藉由接觸插塞64喊連接於接觸元件· 接著如第12圖所7F，移除第一圖案層24，在半導體基底1〇 上形成-第-平坦層3G ’同時填人第—開口 28中。之後，依序於 +導體基底H)表面形成—第三反射層32以及—第三分色膜Μ。 」後明乡考第13圖’於第三分色膜％上形成—第二圖案層（圖 厂、）、包&第與第二曝像區域26、38’暴露出第一與第二次 像素46、48 _第三分色膜34。以第二_層當作侧遮罩，進 盯-餘刻製程，移除被第二圖案層暴露出的部分第三分色膜％及 其下方的第三反射層32，直至第二分色膜2()表面，並於第三分色 膜34中形成一第二開口 4〇，對應於第一與第二次像素妨、你。 =,第二開口 4〇中填入第二平坦層42。便完成彩色像素陣列 的I作。其中’剩下的第三反射層32係對應於第三次像素5〇， 且經由接觸插塞68而電連接於接觸元件6〇，用來當作像素電極 72使用。 在本發明之其他實施射，可_—、第二、第三分色膜及 第—與第三反射層製作於半導體基底上，再進行餘刻，定 次像素t的分色膜圖案。請參考第14圖至第18圖 =弟:圖為本發w⑽顯示面板之第三實例的製程示意圖。 個像辛刚’其表面包含複數 ^，電子元件（圖未示），並定義有複數個第—次像素 弟一:人像素U6以及第三次像素118，分別表示用來提供不 16 200846742 同顏色之光線，以形成一彩色像素陣列120。然後依序於半導體基 底100表面形成一第一反射層102、一第一彩色濾光層1〇4、一第 二反射層106、一第二彩色遽光層108、一第三反射層n〇以及一 第三彩色濾光層112。其中，第-、第二與第三彩色據光層1〇4、 1〇8、112可包含無機分色膜材料，且第一與第二彩色濾光層ι〇4、 108上方可選擇性分別包含一第一與一第二緩衝層（圖未示》可 以相同於第-與第二彩色濾、光層1〇4、⑽之材料或其他材料製:X =: In the embodiment, the first and second buffer layers may be omitted, and the second reflective layer 18 may be formed on the first dichroic film 14. Next, as shown in FIG. 2, a semiconductor material ι is formed on the semiconductor substrate, which may include an organic material or a germanium material, and is applied to the photoresist member via the lithography process. It may correspond to at least one of the first sub-pixels 46 on the semiconductor base (shown in Figure 6). Next, the second buffer layer 22 and the second dichroic film 2 () are removed by using the first pattern layer 24 as a residual mask 'removed through the first exposure area % of the first pattern layer 24. And a second reflective layer 18. In this embodiment, since the second buffer layer 22 and the second dichroic film 2 〇 comprise the same material, the second buffer layer 22 and the second dichroic film 2 移除 can be removed through a side process, and exposed. Part of the second reflective layer 18. Then, the second reflective layer 18 exposed by the second dichroic film 20 is removed by a different agent until the first buffer layer or the first dichroic film 14' is exposed and the second dichroic film 2 is removed. A first opening 28 is formed in the second and second reflective layers 18. In the present embodiment, the step of removing a portion of the second reflective layer 18 may simultaneously remove a small amount of the first buffer layer, leaving the remainder in the first buffer layer 16 without reducing the first-dichroic film. 14 thickness. However, since the second reflection ^ 10 200846742 = ^ = material 2 - minute _ or the first buffer layer should have a higher 1 almost: shift two: the right etched second reflective layer 18 etching process, so slow The material may be formed on the first color separation film 14 without removing the first pattern layer 24 on the first color separation film 14, and then disposed on the first color separation film 14 or the first buffer layer 16 in the first opening. The first flat layer 30 of the ", /, may comprise the material of the phase buffer layer 16, h" coin knife has a film 14 A brother, ^ $ said the way to the bottom of the 10 bottom surface full shape 7 grinding method to remove excess The first flat layer 3G material. In the other real shaving brakes, the second buffer layer 22 is formed on the surface of the second dichroic film 2〇, and n is used for the first dichroic film 2 ( The first flat layer of the surface is regarded as the second buffer layer 22. [Fig. 4] The first flat layer % and the second buffer layer 22 or the second color separation layer, the surface forms a second reflective layer 32 and a color filter layer comprising a third color separation film 34 of the dichroic film two ZW t. Similarly, the material of the third reflective layer 32 is the same as the material of the first or second reflective layer 12, 18. , for example, containing metal The material of the third color separation film 34 preferably comprises inorganic components, such as titanium oxide, cerium oxide, etc., which are stacked in different proportions. A second pattern layer 36 is formed, which may be in the domain of organic or optical F. The second pattern layer 36 includes a second exposure region 38 and a first exposure region, and is defined by a lithography process and exposed. A third dichroic film 34, 11 200846742 is obtained, wherein the second exposure region 38 can correspond to at least one second sub-pixel 48 on the semiconductor substrate ι (shown in FIG. 6). Then, as shown in FIG. And performing an etching process using the second pattern layer 36 as a mask to remove a portion of the third color separation 臈% and the second reflection layer 32 exposed by the second pattern layer 36 until the second buffer layer is exposed. 22 or stop at the surface of the second dichroic film 20, and form a second opening _ 仙 in the third dichroic film 34 and the third reflective layer 32. As shown in Fig. 6, the second pattern layer 36 is removed, Forming a second planar layer 42 on the exposed second dichroic film 2〇 or the second buffer layer 22. Production of the second planar layer 42 The method can be deposited in a redundant manner on the surface of the rotating substrate 1 while being filled into the second opening 40, and then the excess portion is removed by grinding to flatten the surface of the semiconductor substrate 10. Thus, the method is completed. Inventive color LC 〇s display device color; light layer fabrication 'forms color pixel array 44. In this embodiment, when the light source passes through the first, second and third color separation films 14, 2, 34 It will be emitted by light of different wavelength ranges of the alkali film of the color separation film material, for example, green light, red light and blue light respectively. Therefore, when the light is incident on the private side of the color pixel array, it will be the first and second of the uppermost layer respectively. Or the third reflective layers 12, 18, ^ reflect 'through the first, second or third dichroic films 14, 2, 34 of the uppermost layer to form green, red and blue light, respectively. Therefore, the portion having the first, second or third dichroic film Μ, 2 〇, 34 on the peak surface of the semiconductor substrate can be phased into a color pixel array private-first sub-pixel 46, second sub-pixel 48 and After the third pixel 50 (4) is etched - the remaining third dichroic film 34 corresponds to the third sub-pixel 5 〇), and the first reflective layer 12 and M 〇 of the electrode are utilized by the pixel 12 200846742 A transistor or other component is connected to produce a color image. / Next, as shown in Fig. 7, a transparent substrate 52, such as a glass substrate or a quartz substrate, is provided, the surface of which comprises a transparent conductive layer 56, such as a oxidized samarium layer. The semiconductor substrate 1GJi has the surface of the color pixel array 44 facing the transparent substrate 52, and the transparent substrate 52 is combined with the semiconductor substrate 1 〇 in parallel, for example, the transparent substrate 52 is fixed on the semiconductor substrate 1 以 with a sealant, and then The liquid crystal molecules are poured between the transparent substrate 52 and the semiconductor substrate 10 to form a liquid crystal layer, and the LCoS look-up panel 80 of the present invention is completed. Further, in order to control the arrangement direction of the liquid crystal molecules, an alignment film 74, 78 (the alignment film 78 is formed on the second flat layer 42) may be formed on the inner surface of the transparent substrate 52 and the semiconductor substrate 10, respectively. It is worth noting that in the first embodiment of the present invention, a color pixel array having at least three colors is created on the same Lc〇s display panel 80, and is applied to early-type LCoS display. It is necessary to provide a bismuth film (first, second and third color separation films 14, 20, 34) on the semiconductor substrate 10, and to form a first opening having a different depth in the color separation film via secondary etching. 28 and the second opening 4〇, so that the first, second and third dichroic films 14, 20, 34 respectively become the outermost color separation film on the semiconductor substrate 10 in different sub-pixels, and the light is colored in different colors. Shoot out. However, if a color pixel array of more colors is required, another color separation film may be formed on the third color separation film 34, and a similar process is repeated. 13 200846742 , '^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^^ A color (10) array containing green/red or green/blue color is combined with a color display layer and an optical engine to produce a color-cut image. In addition, if you want to make only two colors of color riding on the lCqS display panel, it is difficult to carry out the engraving process, and the panel wires have different color separation. Taking the spring 帛-f domain of the present invention as an example, the method of the color-colored color plate only includes the processes of the first to third figures. Since the present invention mainly provides a method of fabricating a % color pixel matrix on the same-LCgS display panel, the method of fabricating the pixel electrode or the pixel circuit is not the present invention. In order to enable the subject to understand the combination and application of the color pixel matrix fabrication method of the present invention and the pixel circuit process, the color pixel matrix method including the contact plug component will be briefly described in Figs. For convenience of explanation, the components in the drawings follow the component symbols of the first to sixth figures. Referring to Figure 8 first, a semiconductor substrate 10 is provided, on which a plurality of sub-pixels ' are defined to form a pixel array, such as a first sub-pixel 46, a second sub-pixel 48, and a second sub-pixel 5". The semiconductor substrate 1 is provided with a plurality of pixel circuits (not shown), and is disposed in each sub-pixel. Then, a first reflective layer 12 is formed on the surface of the semiconductor substrate (7), which includes a pixel electrode 58 and at least one contact element. (9) 'for example, a connection port, disposed in the second or third sub-pixel 48, 5G (in the figure) The display 14 200846742 has a contact element 6G in the second and third sub-pixels 48, 5G, respectively, and the pixel electrode 58 does not contact the contact element 60 corresponding to the first sub-pixel 46'. The pixel electrode 58 and the contact element 60 may be formed by first forming a first reflective layer 12 on the surface of the semiconductor substrate 1 and then performing a lithography and etching process to form the pixel electrode 58 and the contact element 60. Next, a first dichroic film 14 is formed on the surface of the semiconductor substrate 1 and the surface thereof may include a buffer layer (not shown). Referring to FIG. 9, a further lithography and etching process is performed, a contact hole 62 is formed in a portion of the first dichroic film 14 above the contact member 6〇, and a conductive material is filled in the contact hole 62 to form a contact. The plug 64 is inside the first dichroic film 14. Next, as shown in FIG. 00, a second reflective layer 18 is formed on the surface of the semiconductor substrate 10, the pattern corresponding to the first sub-pixel 46 and the second sub-pixel 48, and includes a contact element 66' is set for the third time. Above the contact plug 62 in the pixel 5, and electrically connected to the contact element 60 by the contact plug 64. Reading, a second dichroic film 2 is formed on the surface of the semiconductor substrate 1 and a contact plug 68 is formed therein, which is electrically connected to the contact member 66 and the contact member 6A. Referring to Fig. 11, then coating the surface of the semiconductor substrate 1 - the first photoresist layer as the first pattern layer 24' includes a first exposure region 26 corresponding to the first image; Then, a paste-passing process is performed, and the first-dichroic film 2G and the second reflective layer 18 exposed through the first-exposure region 26 side are formed up to the surface of the first dichroic film 14 to form in the first-division film 20. The first opening 28 is set in the first sub-pixel. Whereas the remaining second reflective layer 18 is located in the portion of the second sub-pixel 48, it is regarded as the second time pixel of the pixel of the pixel 48, which is connected to the contact element by the contact plug 64. In Fig. 12, 7F, the first pattern layer 24 is removed, and a -first flat layer 3G' is formed on the semiconductor substrate 1 while being filled in the first opening 28. Thereafter, a third reflective layer 32 and a third dichroic film are formed on the surface of the +conductor substrate H). The 13th picture of the Houming Township Examination is formed on the third color separation film% - the second pattern layer (picture factory), the package & the second and second exposure areas 26, 38' expose the first and second Sub-pixels 46, 48 - third dichroic film 34. Taking the second layer as a side mask, the inscribed-receiving process removes a portion of the third dichroic film exposed by the second pattern layer and the third reflective layer 32 below it until the second color separation The surface of the film 2 (), and a second opening 4 形成 is formed in the third dichroic film 34, corresponding to the first and second sub-pixels. =, the second opening 4 is filled with the second flat layer 42. I completed the color pixel array. The remaining third reflective layer 32 corresponds to the third sub-pixel 5 〇 and is electrically connected to the contact element 6 经由 via the contact plug 68 for use as the pixel electrode 72. In other embodiments of the present invention, the second and third dichroic films and the first and third reflective layers are formed on the semiconductor substrate, and the dichroic film pattern of the pixel t is repeated. Please refer to Figure 14 to Figure 18 = Brother: Figure is a schematic diagram of the process of the third example of the display panel of the w(10). Like Xin Gang's surface contains a plurality of ^, electronic components (not shown), and defines a plurality of first-order pixel one: human pixel U6 and third pixel 118, respectively, used to provide not 16 200846742 Light rays of color to form a color pixel array 120. Then, a first reflective layer 102, a first color filter layer 1〇4, a second reflective layer 106, a second color light-emitting layer 108, and a third reflective layer n〇 are formed on the surface of the semiconductor substrate 100. And a third color filter layer 112. Wherein, the first, second and third color light-receiving layers 1〇4, 1〇8, 112 may comprise an inorganic color separation film material, and the first and second color filter layers ι4, 108 are selectively selectable Each of the first and second buffer layers (not shown) may be the same as the first and second color filters, the optical layer 1〇4, (10) or other materials.
作丄以不影響下方的分色膜之光學侧紐件，翻來在後續飯 刻第二、第三反射層106、110時提供一緩衝功能，避免傷害下方 的分色膜材料。 ° 接著’如帛15圖所示，於第三彩色滤光層112上方形成一第 -圖案層122 ’其包含-第一曝像區域124，暴露出對應於第一次 像素m之部分第三彩色遽光層112。然後以第一圖案層⑵當作 蝕刻遮罩’進行一第一蝕刻製程，移除被第一圖案層122暴露出 的部分第三彩色獻層112以及其下方的第三反射層⑽，直至第 二彩色濾光層108表面，同時在第三彩色遽光層112之中形成一 開口 126 ’對應於第一曝像區域124。 然後，請參考第圖，可選擇性於開口 126中填入一平坦_ 未不），使半導縣底具有—平坦之表面，約略平行於第三彩 ^慮光層112之表面。或者，可直接於半導體基底廳表面开^ 弟一圖案層⑶，其包含—第二曝像區域13G，暴露出對應於第 200846742 二次像素116之部分第三彩色濾'光層！ ^ 饮音，如弟17圖所不， 以弟二圖案層128當作蝕刻遮罩，谁并 *卜^ 旱進仃一弟二蝕刻製程，移除暴 露出的第三彩色濾光層112、第三反射声 、# 耵層U0、弟二彩色濾光層108 以及弟一反射層106,直至第一彩色濟央展ιπ/ΐ + 巴/慮先層104表面，在第三與第 二彩色濾光層112、108以及第三盥筮-f —"、第一反射層110、106之中形 成一開口 132 〇 • 請參考第18圖，移除第二圖案層⑶，然後於開π 132與開口 m中形成—平坦層m。錄作方法可於半導縣底励表面全 =沉積-平坦層材料（圖未示），然後再以研磨方式，將高於第三 彩色濾、光層112的平坦層材料移除，使平坦層材料之表面约略相 =於第二衫色濾、光層112。其中，平坦層134之材料可包含第一、 第二或第三彩色濾光層·、廳、112之材料，例如包含二氧化 石夕或二氧化鈦等無機材料或其他不影響第―、第二或第三彩色滤 _ 光層104、1〇8、112之光學作用之材料。 奸因此’由彩色像素陣列120±方入射之光線，可分別被最表層 的第一、第一或第三反射層106、1〇2、110反射向上射出，分別 見出各第一、第二與第三次像素、U6、U8中最上層的第 —第—或第三彩色渡光層1〇8、1〇4、m分色後的彩色光線， 例如為紅光、藍光與綠光。 I本發_其他實施例中，前述第二麵製程亦可賤刻至第 18 200846742 • 三反射層u〇即停止，使得第一、第二次像素114、ii6的表層皆 為第二彩色濾光層108。在此情況下，由彩色像素陣列12〇向上反 射之光線僅會產生對應第二彩色濾光層108與第三彩色濾光層112 之兩種彩色光線。因此，利用本發明方法與精神，可於同一彩色 像素陣列或同一 LCoS面板之不同區域上形成具有不同彩色光線 組成之像素，例如可依據前述製程方法，視需要在半導體基底上 形成複數層彩色濾光層和反射層（或蝕刻停止層），在不同像素中 • 具有多種開口深度或結構，便可於不同像素中分別產生一至三 種、甚至更多種顏色之彩色光線。 此外，在第三實施例中雖然沒有教導如何製作像素電極以及第 -、第二與第三彩色濾、光層104、應、112之間的接觸插塞，但 ^於此技者應可輕易結合前述實施例中的製程來晴製作接觸插 基、接觸電或其他電子元件與本發明彩色像素陣列12〇。再者，習 鲁於此技者亦可結合前述實施例之方法，另提供一透明基板與液晶 刀子以與半導體基底100結合而製作LCoS顯示裝置。 顯=考Γ至第22圖’第19至第22圖為本發明製作吻 式中：：像素陣列之第四實施例的製程示意圖，本實施例圖 i，提第14至18圖之元件符號。首先，如第19圖所 _ 基底卿，録面錢錢油絲素，為簡化 5兄月，本實施例僅以-組包含—第-次像素m、-第二次像f ⑽及-第蝴素m之料物觸。縣，在其上方形成^ 19 200846742 .第一反射層102。第一反射層102包含一像素電極Π6設於第一次 像素114中以及二接觸元件138分別設於第二次像素116與第三 次像素118中，其中像素電極136與接觸元件138分別電連接於 第一、第二與第三次像素114、116、118内之像素電路或電子元 件（圖未示）。第一反射層1〇2的製作方法可以金屬材料或其他導 電材料於半導體基底1〇〇表面沉積一反射層，之後再以微影暨# 刻製程定義製作出像素電極136與接觸元件138。 然後，在半導體基底100表面形成一第一彩色濾光層1〇4以及 一第一緩衝層142。第一缓衝層142的材料可相同於第一彩色濾光 層104,並以增厚預定之第一彩色濾光層1〇4之厚度來當作第一緩 衝層142接者移除部分弟一彩色濾光層與第一緩衝層Μ】， 而於接觸元件138上的第一彩色濾、光層104内形成接觸洞，再於 接觸洞内填入導電材料，以形成接觸插塞140。然後在半導體基底 瞻1〇〇上依序形成一第二反射層106、一第二彩色滤光層1〇8以及一 第二緩衝層148，同樣地，第二緩衝層148之材料可類似於第二彩 色渡光層108之材料。第二反射層1〇6對應於第王次像素則之 區域包含一接觸元件144,且第二反射層106另覆蓋了半導體基底 ⑽上對應於第，二次像㈣、116之部分。接 形色遽光層108與第二緩衝層148中形成一接觸插塞146，設於接 f tl件144上方，並藉由接觸元件144與接觸插塞14〇而與第三 * 次2素118内的接觸元件138電連接。然後，再於第二緩衝層148 或第色濾、光層1〇8上形成一第三反射層⑽以及一第三彩色 20 200846742 \ 螓 濾光層112。 請參考第2G ®，接著在第三彩色濾韻m表娜成 圖案層m，其包含-第-曝像區域m ’暴露出第三彩色濟光層 Π2對應於第-次像素m之部分。接著以第―圖案層122當作^ 刻遮罩而移除暴露出的部分第三彩色濾光層112及其下方 第三反射層11G、第二緩衝層148、第二彩色遽光層⑽及刀 ❿射層106 ’直至第一緩衝層142表面，並形成-開口 126。料， 剩下的第二反射層對應於第二次像素116之部分則被 二次像素116的像素電極154。 接著如第21圖所示，於開口126中形成-第-平坦層150，i 材料可相同於第-緩衝層⑷之材料，以沉積方式形成於半導體 基底應表面，並選擇性以研磨製程移除多餘的第一平坦芦⑼ 材料。然後，於第一平坦層15〇以及第 曰 »、 久乐—杉色濾光層112之上形 成一第二圖案層128,其包含一篦-H翼你广^ /、u 曝像_ m，對應於第二次 像 I 116 〇 然後如第22圖所示’ _第二_ i28當作遮罩，移除盆 所暴路出的第-平坦層15〇、第三彩色渡光層ιΐ2 1:’直至第二緩衝請表面，而於第三物 反射層110中形成一開口 132，對應於 曰/、第一 ^ 1〇〇 、弟—久像素110。之後移除 .弟一圖案層128 ’並於半導體基底⑽上形成-第二平坦層152， 21 200846742 同時使第二平坦層152填入開口 132内。第二平坦層i52之材料 可相同於4二緩觸148或第二彩色獻層⑽之材料。接著進 =^磨=程，將第三彩色渡光層⑴表面上的第—與第二平括 層150、152移除，便完成本發明彩色像素陣列⑽之製作。 相較於習知技術，由於本發明副顯示裝 三層反射層第三細紙間，並Γ 包含金屬·的反騎與彩缝、光層材料具有不__性的性 質’因此仰利用簡單的敍刻製程分別定義出各次像素中的第 -、第二與第三彩㈣光層時，可反射層當作_停止層， 而避免在倾製財破壞反簡下方的彩色縣層，以在各:像 素内提供具有不同_之第―、第二與第三彩色渡光層。因此， 各次像素可以藉由其表面上的第―、第二與第三觀濾光層分別 將光線分光成不同色光’而在同一 LC0_示面板上產生提供光 線’進而產生彩色影像。再者，由於本發日月lcgs顯示裝置係於單 - LCOS顯示面板上製作彩色像素陣列，因此可以簡化習知瓜8 顯示裝置中的複雜光學引擎’例如光學引擎中不再需要分光和光 系統與色轉輪’也僅需要-個自統，便可细本發明具有彩色 像素陣列之LCOS顯示裝置產生彩色的影像，大幅節省製程成核 產品尺寸。 以上所述僅為本發明之較佳實施例，凡依本發明申請專利範圍 所做之均等變化與修飾，皆應屬本發明之涵蓋範圍。 22 200846742 . 【圖式簡單說明】 第1圖至第7圖為本發明具有彩色像素陣列之LC〇s顯示裝置製作 方法之第一實施例的示意圖。 第8圖至第13圖為本發明具有彩色像素陣列之LCoS顯示裝置製 作方法之第二實施例的示意圖。 第Η圖至第18圖為本發明LCoS顯示面板之第三實例的製程示音 圖。 、 _ 第19圖至第22圖為本發明LCoS顯示面板之第四實例的製程示音 圖0As a result, the optical side member which does not affect the lower color separation film is turned over to provide a buffering function for the subsequent second and third reflective layers 106 and 110 to avoid damage to the underlying color separation film material. Then, as shown in FIG. 15 , a first pattern layer 122 ′ is formed over the third color filter layer 112 and includes a first exposure region 124 exposing a portion corresponding to the first pixel m. Color twilight layer 112. Then, a first etching process is performed using the first pattern layer (2) as an etch mask, and a portion of the third color layer 112 exposed by the first pattern layer 122 and the third reflective layer (10) below it are removed until the first The surface of the second color filter layer 108, while forming an opening 126' in the third color light-emitting layer 112 corresponds to the first exposure region 124. Then, referring to the figure, a flat _ no) may be selectively filled in the opening 126 to have a flat surface at the bottom of the semi-conducting county, approximately parallel to the surface of the third coloring layer 112. Alternatively, a pattern layer (3) may be directly formed on the surface of the semiconductor substrate, which includes a second exposure region 13G exposing a portion of the third color filter 'optical layer corresponding to the second pixel 116 of the 200846742! ^ Drinking sound, as shown in the picture of the younger brother, the pattern layer 128 is used as an etch mask, and the etch process is removed, and the exposed third color filter layer 112 is removed. The third reflected sound, the #耵 layer U0, the second color filter layer 108, and the second reflective layer 106, until the first color, the first color, and the first layer 104, in the third and second colors The filter layers 112, 108 and the third 盥筮-f —", the first reflective layer 110, 106 form an opening 132 请 • Please refer to Fig. 18, remove the second pattern layer (3), and then open π 132 is formed in the opening m - a flat layer m. The recording method can be used to remove the flat layer material higher than the third color filter and the light layer 112 in a semi-conducting state. The surface of the layer material is approximately phased at the second color filter and the optical layer 112. The material of the flat layer 134 may include the first, second or third color filter layer, the hall, the material of the 112, for example, including inorganic materials such as dioxide or titanium dioxide, or the like does not affect the first, second or The third color filter _ optical layer 104, 1 〇 8, 112 optically active material. Therefore, the light incident by the color pixel array 120± square can be respectively reflected by the first, first or third reflective layer 106, 1〇2, 110 of the outermost layer, respectively, and the first and second are respectively seen. The colored light beams separated by the first-first or third color light-passing layers 1〇8, 1〇4, and m of the uppermost layer of the third sub-pixel, U6, and U8 are, for example, red light, blue light, and green light. In other embodiments, the second surface process can also be engraved to the 18th 200846742. The three reflective layers are stopped, so that the surface of the first and second sub-pixels 114 and ii6 are the second color filter. Light layer 108. In this case, the light reflected upward by the color pixel array 12 仅 only produces two colored rays corresponding to the second color filter layer 108 and the third color filter layer 112. Therefore, by using the method and the spirit of the present invention, pixels having different color light compositions can be formed on different regions of the same color pixel array or the same LCoS panel. For example, a plurality of color filters can be formed on the semiconductor substrate according to the foregoing process method. Light and reflective layers (or etch stop layers), in different pixels • With multiple opening depths or structures, one to three or even more colors of colored light can be produced in different pixels. In addition, although the third embodiment does not teach how to fabricate the pixel electrode and the contact plug between the first, second, and third color filters, the optical layer 104, and the 112, the technique should be easy. The contact interposer, contact electrical or other electronic components are combined with the color pixel array 12 of the present invention in conjunction with the process of the previous embodiment. Furthermore, the skilled artisan may also combine the methods of the foregoing embodiments to provide a transparent substrate and a liquid crystal blade for bonding with the semiconductor substrate 100 to fabricate an LCoS display device.显 Γ Γ 第 第 22 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图. First, as shown in Figure 19, basal, recording money and money, in order to simplify 5 brothers and months, this embodiment only includes - the first sub-pixel m, - the second time f (10) and - The material of the butterfly m is touched. The county, above which is formed a ^ 19 200846742. The first reflective layer 102. The first reflective layer 102 includes a pixel electrode Π6 disposed in the first sub-pixel 114 and two contact elements 138 disposed in the second sub-pixel 116 and the third sub-pixel 118, wherein the pixel electrode 136 and the contact element 138 are electrically connected Pixel circuits or electronic components (not shown) in the first, second and third sub-pixels 114, 116, 118. The first reflective layer 1 的 2 can be formed by depositing a reflective layer on the surface of the semiconductor substrate 1 with a metal material or other conductive material, and then the pixel electrode 136 and the contact element 138 are formed by a lithography process. Then, a first color filter layer 1〇4 and a first buffer layer 142 are formed on the surface of the semiconductor substrate 100. The material of the first buffer layer 142 may be the same as the first color filter layer 104, and the thickness of the predetermined first color filter layer 1〇4 is increased as the first buffer layer 142. A color filter layer and a first buffer layer are formed, and a contact hole is formed in the first color filter and the light layer 104 on the contact member 138, and a conductive material is filled in the contact hole to form the contact plug 140. Then, a second reflective layer 106, a second color filter layer 〇8, and a second buffer layer 148 are sequentially formed on the semiconductor substrate. Similarly, the material of the second buffer layer 148 can be similar. The material of the second color light-passing layer 108. The second reflective layer 〇6 corresponds to the second sub-pixel region and includes a contact element 144, and the second reflective layer 106 further covers portions of the semiconductor substrate (10) corresponding to the second and fourth images (four), 116. A contact plug 146 is formed in the junction buffer layer 108 and the second buffer layer 148. The contact plug 146 is disposed above the 144 member 144 and is connected to the contact plug 14 〇 and the third PMOS layer. Contact elements 138 within 118 are electrically connected. Then, a third reflective layer (10) and a third color 20 200846742 螓 filter layer 112 are formed on the second buffer layer 148 or the first color filter and the light layer 1〇8. Referring to the 2G®, the third color filter m is formed into a pattern layer m, which includes a -first exposure region m' exposing a portion of the third color light layer Π2 corresponding to the first-th sub-pixel m. Then, the exposed portion of the third color filter layer 112 and the third reflective layer 11G, the second buffer layer 148, and the second color phosphor layer (10) are removed by using the first pattern layer 122 as a mask. The squeegee layer 106' is up to the surface of the first buffer layer 142 and forms an opening 126. The remaining second reflective layer corresponds to the portion of the second sub-pixel 116 and is then the pixel electrode 154 of the secondary pixel 116. Next, as shown in FIG. 21, a -planar layer 150 is formed in the opening 126, and the material i may be the same as the material of the first buffer layer (4), formed on the surface of the semiconductor substrate by deposition, and selectively moved by the polishing process. Except for the excess first flat reed (9) material. Then, a second pattern layer 128 is formed on the first flat layer 15〇 and the 曰», 久乐-杉色光光层112, which includes a 篦-H wing, a wide ^ /, u exposure image _ m Corresponding to the second image I 116 〇 and then as shown in Fig. 22 ' _ second _ i28 as a mask, remove the first flat layer 15 暴, the third color light 层 ΐ 2 1: 'until the second buffer surface, and an opening 132 is formed in the third object reflective layer 110, corresponding to 曰/, the first ^1〇〇, the brother-long pixel 110. Thereafter, a pattern layer 128' is removed and a second planar layer 152 is formed on the semiconductor substrate (10), 21 200846742 while the second planar layer 152 is filled into the opening 132. The material of the second flat layer i52 may be the same as the material of the 4 second buffer 148 or the second color layer (10). Next, the first and second flat layers 150, 152 on the surface of the third color light-passing layer (1) are removed, and the color pixel array (10) of the present invention is fabricated. Compared with the prior art, since the sub-display of the present invention is provided with a three-layer reflective layer between the third fine paper, and the anti-riding and color-stitching of the metal, the optical layer material has a property of not having a __ property. When the engraving process defines the first, second, and third color (four) light layers in each sub-pixel, the reflective layer acts as a _stop layer, and avoids the color county layer under the degeneration of the depreciation. The first, second and third color light-emitting layers having different _ are provided in each pixel. Therefore, each sub-pixel can generate light rays on the same LC0_ display panel by splitting the light into different color lights by the first, second and third filter layers on the surface, respectively, thereby generating a color image. Furthermore, since the lcgs display device of the present invention is used to fabricate a color pixel array on a single-LCOS display panel, it is possible to simplify the complicated optical engine in the conventional melon 8 display device. For example, the optical engine no longer needs the spectroscopic and optical system. The color wheel 'only needs only one self-synchronization, so that the LCOS display device with the color pixel array can produce color images, which greatly saves the size of the process nucleation product. The above are only the preferred embodiments of the present invention, and all changes and modifications made to the scope of the present invention should fall within the scope of the present invention. 22 200846742 . [Simple Description of the Drawings] Figs. 1 to 7 are schematic views showing a first embodiment of a method of fabricating an LC 〇s display device having a color pixel array. 8 to 13 are views showing a second embodiment of a method of fabricating an LCoS display device having a color pixel array according to the present invention. Figures 18 through 18 are process diagrams of a third example of the LCoS display panel of the present invention. _ 19th to 22th are the process examples of the fourth example of the LCoS display panel of the present invention.
【主要元件符號說明】 10 半導體基底 14 第一分色膜 18 第二反射層 22 第二緩衝層 26 第一曝像區域 3〇 第一平坦層 34 第三分色膜 38 第二曝像區域 42 第二平坦層 46 第一次像素 5〇 第三次像素 54 液晶層 12 第一反射層 16 第一緩衝層 20 第二分色膜 24 第一圖案層 28 第一開口 32 第三反射層 36 第二圖案層 40 第二開口 44 彩色像素陣列 48 第二次像素 52 透明基板 56 透明導電層 23 200846742[Major component symbol description] 10 semiconductor substrate 14 first dichroic film 18 second reflective layer 22 second buffer layer 26 first exposure region 3 〇 first flat layer 34 third dichroic film 38 second exposure region 42 Second flat layer 46 first pixel 5 〇 third time pixel 54 liquid crystal layer 12 first reflective layer 16 first buffer layer 20 second color separation film 24 first pattern layer 28 first opening 32 third reflective layer 36 Second pattern layer 40 second opening 44 color pixel array 48 second pixel 52 transparent substrate 56 transparent conductive layer 23 200846742
58 像素電極 60 接觸元件 62 接觸洞 64 接觸插塞 66 接觸元件 68 接觸插塞 70 像素電極 72 像素電極 74、 78 配向膜 80 LCoS顯示面板 100 半導體基底 102 第一反射層 104 第一彩色濾、光層 106 第二反射層 108 第二彩色濾光層 110 第三反射層 112 第三彩色濾光層 114 第一次像素 116 第二次像素 118 第三次像素 120 彩色像素陣列 122 第一圖案層 124 第一曝像區域 126 開口 128 第二圖案層 130 第二曝像區域 132 開口 134 平坦層 136 像素電極 138 接觸元件 140 接觸插塞 142 第一緩衝層 144 接觸元件 146 接觸插塞 148 第二緩衝層 150 第一平坦層 152 第二平坦層 154 像素電極 2458 pixel electrode 60 contact element 62 contact hole 64 contact plug 66 contact element 68 contact plug 70 pixel electrode 72 pixel electrode 74, 78 alignment film 80 LCoS display panel 100 semiconductor substrate 102 first reflective layer 104 first color filter, light Layer 106 second reflective layer 108 second color filter layer 110 third reflective layer 112 third color filter layer 114 first pixel 116 second pixel 118 third pixel 120 color pixel array 122 first pattern layer 124 First exposure area 126 opening 128 second pattern layer 130 second exposure area 132 opening 134 flat layer 136 pixel electrode 138 contact element 140 contact plug 142 first buffer layer 144 contact element 146 contact plug 148 second buffer layer 150 first flat layer 152 second flat layer 154 pixel electrode 24