TW200846300A - Dielectric ceramic composition and electronic device - Google Patents

Abstract

A dielectric ceramic composition comprising BamTiO2+m (note that "m" satisfies 0. 99 ≤ m ≤ 1.01) and BanZrO2+n (note that "n" satisfies 0. 99 ≤ n ≤ 1.01), an oxide of Mg, an oxide of R (note that R is at least one selected from Sc, Y, La, Ce, Pr, Nd, Pm, Sm, Eu, Gd, Tb, Dy, Ho, Er, Tm, Yb and Lu), an oxide of at least one element selected from Mn, Cr, Co and Fe, and an oxide of at least one element selected from Si, Li, Al, Ge and B. With respect to 100 moles of said BamTiO2+m, 35 to 65 moles of BanZro2+n, 4 to 12 moles of an oxide of Mg, 4 to 15 moles of an oxide of R, 0. 5 to 3 moles of an oxide of Mn, Cr, Co and Fe, and 3 to 9 moles of an oxide of Si, Li, Al Ge and B are included therein.

Description

200846300, IX. Description of the Invention: [Technical Field] The present invention relates to a dielectric ceramic composition having resistance to reduction and an electronic component having the dielectric ceramic composition in a dielectric layer In particular, it relates to a dielectric ceramic composition and an electronic component suitable for use in high voltage applications with a high rated voltage (for example, l〇〇v or more). [Prior Art] As an example of an electron 7L piece, a laminated ceramic capacitor is, for example, an internal electrode printed on a predetermined pattern of a ceramic sheet formed by a predetermined dielectric composition of m, and a plurality of which overlap each other, and then - The raw embryonic wafer is simultaneously fired and skinned. Helmets ^ ^ In order to be integrated with ceramic dielectrics by firing, the internal electrode layers of the terracotta terracotta terracotta must be chosen to not react with the ceramic dielectric. In terms of the material constituting the internal electrode layer, a high-priced noble metal such as platinum or palladium is used in the prior art in the prior art. In recent years, it has been possible to use a low-cost metal-based dielectric ceramic composition such as nickel or copper to continuously develop n9, which can greatly reduce the cost. In addition, in recent years, as the density of electronic circuits has increased, the demand for miniaturization of :::7 has been increasing. Therefore, the miniaturization and large-capacity of laminated ceramic cells have been reduced. What comes up is that the dielectric layer of the laminated ceramics is not a thin layer. Therefore, the industry is looking for a layer that can maintain a layer even if it is thinned.益之# The dielectric ceramic ware composition.尤J: Yes, ^, 疋 咼疋 咼疋 咼疋 咼疋 咼疋 ( ( ( ( ( ( ( ( ( ( ( 之中 之中 之中 之中 之中 之中 之中 之中 之中 之中 之中 大 大 大 大 大 大 大 大 大 大 大 大 大 大 大 大 大 大 大 大 大F〇rever769 200846300, dielectric insulator ceramic composition of the dielectric layer is required to have very high reliability. In contrast, for example, Japanese Patent No. 3567759 discloses a dielectric ceramic composition for a capacitor used under high frequency and high voltage alternating current, wherein the dielectric ceramic composition contains a sintering aid. a principal component expressed by a composition formula: AB〇3+aR+bM (in which an AB〇3 barium titanate solid solution, an oxide such as a metal element such as β-Le, or an oxide of a metal element) In this case, the sintered auxiliary material is an auxiliary component and contains at least one of a ruthenium element and a Si element. Further, as disclosed in the above-mentioned Japanese Patent No. 3567759, XZrCh is added in a range of 0.35 m or less with respect to a barium titanate solid solution represented by ABCh in a main component (wherein the lanthanoid system) A metal element selected from the group consisting of hydride, and at least one of Ca is used as an additive component in the main component. However, in the Japanese Patent Publication No. 3567759, the withstand voltage (destruction voltage) is low and the life characteristics (acceleration life of the insulation resistance) are insufficient, so that there is a problem that the reliability is deteriorated. In particular, this problem is remarkable when the multilayer ceramic capacitor is reduced in size and capacity. Therefore, in order to achieve miniaturization and large capacity, pressure resistance and life characteristics (acceleration life of insulation resistance) are sought. ) the improvement. SUMMARY OF THE INVENTION In view of the above problems, an object of the present invention is to provide an electrostrictive amount that can be fired in a reducing environment, has a low electrostrictive amount when applied, and maintains a specific dielectric ratio and capacity. 2030-9390-PF;Forever7 69 200846300 Dielectric body ceramic composition with temperature characteristics and improved durability of the house (destruction voltage) and insulation resistance' and the dielectric ceramic composition with this dielectric It serves as an electronic component of the dielectric layer. In order to achieve the above object, a first aspect of the present invention provides a dielectric ceramic composition comprising: a dielectric m composition. The dielectric body composition includes: Ba is "where m system 〇 99_ 1.01"; BanZr 〇 2+n (where n system 〇.99 "1 〇 1 each); heart oxide; R An oxide (wherein R is selected from the group consisting of Sc, Y, u, Ce, pr, Nd,

At least ^) of the group consisting of Pm, Sm, Eu, Gd, Tb, Dy, H〇, Er, Tm, Yt^ Lu; selected from ^々, and "at least one element of the group formed" An oxide of at least one element selected from the group consisting of Si, u, Ai, and GeH, wherein the oxide or compound of each component is relative to the above-mentioned The ratio of oxide conversion is as follows, Ba gas: 35, Mohr; heart oxide: 4 to 12 m; R oxide: 4 to 15 m; for example, c〇 and b. oxide: 〇.5 〜 3 Mohr; Si, Li, A1, GQB_n9 Mohr. r In the present invention, the aforementioned BamTi〇~ with respect to 100 mol

The ratio of BanZr 〇 2+n is 40 to 55 m. The dielectric ceramic core of the second aspect of the present invention is an electroceramic composition having the ith component represented by the general formula of (BaaRb)e(TicZrdMge)〇3. The general formula is an alkaline earth element, and in the above general formula, 〇·8$ as 〇·96; 2030-9390-PF; Forever769 200846300, 〇. 〇4^ 〇. 2 ; 〇. 55^ 〇. 7 ; 〇. 24$ 〇. 39 ; 〇· 02$ 〇· 〇9 ; and 1 ^ a ^ 1. 15 ; "中目4 B^Ti(h+) for the i-th component of iG〇莫耳m (wherein, the dielectric ceramic composition is more = φ 〇 · 5 〜 3 · 0 摩尔 is selected from the group consisting of Mn, Cr, C 〇 and Fe in at least one of the elements of the oxide And an oxide of at least one element selected from the group consisting of Si, Li, Al, Ge, and B. According to the present invention, an electronic component having a dielectric layer and an internal electrode layer can be provided. The electronic component is composed of the dielectric layer, wherein the dielectric layer is the dielectric composition of the above-mentioned first aspect or the second aspect. In terms of the electronic component of the present invention It is not particularly limited, and for example, it may be a laminated ceramic capacitor, a piezoelectric element, a wafer inducer, a wafer varistor, a wafer thermal resistor, a wafer resistor, and other surface-mounted (smd) wafer type electronic components. The electric ceramic composition has the above specific composition, and therefore can be fired in a reducing environment and electrostrictively applied at the time of voltage application (616. 1; 1*031:1^(:1; 1¥) 6) The amount is low, and the other is -M. 7 in addition, it can maintain the specific dielectric rate and capacity temperature characteristics well, and can withstand the voltage (destruction voltage) and the accelerated life of the insulation resistance of 1 4 。. | 凡凡八疋, in the present invention, by

The ratio of BanZr〇2+n to (10) material BafflTi〇2+„ is controlled at 35, Mo 2030-9390-PF; Forever769 9 200846300 ear or 40~55 Moerzo* _ ^ / , w 1 provides capacity temperature The dielectric ceramic composition of the present invention is characterized by the characteristics and the withstand voltage. Therefore, the dielectric body of the present invention is made by the dielectric body of the electronic component such as a multilayer ceramic capacitor. The composition, for example, the dielectric layer is thinned to 20//1B.

High-reliability can also be achieved in the case of high-altitude applications with high rated voltage (for example, 100V = upper 丄, especially above 25GV). In other words, it is also possible to provide an electronic component having high reliability and high-voltage use in response to miniaturization and large capacity. The electronic component of the present invention described above can be applied to various automatic vehicle related applications (fuel injection devices, HID lamps, etc.) or digital camera applications, for example. Hereinafter, the present invention will be described based on the embodiments shown in the drawings.实施 Embodiments (First Embodiment) Multilayer Ceramic Capacitor 1

As shown in Fig. 1, a laminated ceramic capacitor 1 according to an embodiment of the present invention has a dielectric layer 2 and an internal electrode layer 3 interposed to form a two-element body 1 . A pair of external electrodes 4 respectively electrically connected to the internal electrode layers 3 disposed alternately inside the element body 10 are formed at both end portions of the capacitor element body 1''. The shape of the capacitor element body 1A is not particularly limited, and it is usually 'in a rectangular shape. Further, the size thereof is not particularly limited, and it can be appropriately sized according to the use. The internal electrode layer 3 is laminated by exposing the respective end faces to the surfaces of the opposite end portions of the capacitor element body. Further, a pair of outer 2030-9390-PF; Forever 769 10 200846300 electrodes 4 are formed at both ends of the electric device element body 1 and are connected to the exposed end faces of the interposed internal electrode layers 3 to constitute a capacitor circuit. Dielectric Layer 2 The dielectric layer 2 contains the dielectric ceramic composition of the present invention. The dielectric ceramic composition of the present invention comprises:

BamTl〇2+ffi (where m is 0·99g mg 1·〇1);

BanZr〇2+n (where η is 0·99$η$1·〇ι);

An oxide of Mg; an oxide of R (wherein R is selected from the group consisting of Sc, Y, La, Ce, Pr, Nd,

Pm, Sm, Eu, Gd, Th, ϊ) ν, Η. , at least one of the group consisting of id Dy Ho, Er, Tm, Yb, and Lu); an oxide of at least one element selected from the group consisting of Μη, Cr, Co, and Fe; and k from Si An oxide of at least one element of the group consisting of Li, Al, Ge, and B. In Ba»Ti〇2+ffl, the range of „! is 〇.99smg1〇i. At this time, the oxygen (〇) content can also deviate from the stoichiometry of the above formula—mainly as a base material and contained in the dielectric body. In a ceramic composition.

The BanZr 〇 2+ni content may be 3545 m, 40 to 55 m, or 4 〇 to 5 〇 mu relative to 1 mol Baji 〇 2+n. In addition, in BanZr〇2+n, n is 0.99$η$1〇1. At this time, the oxygen (〇) content may also deviate from the stoichiometric amount of the above formula. By adding Ba„Zr〇2+n′ in the above range, the capacity temperature characteristics and withstand voltage can be improved. If the amount of addition of the battery is too small, not only the capacity temperature characteristics and the withstand voltage are lowered, but also the life 2030-9390-PF ; Forever769 11 200846300 The life characteristics will also have a tendency to deteriorate. On the other hand, once there is too much loyalty, the dielectric ratio tends to decrease. ϋ If the content of the oxide replaced by two is relative to 1 〇〇 Mo---= nose, it is a moth. The oxide of Mg has an effect of suppressing strong dielectric properties. When the oxide content of Mg is L ^ ^ k /, the capacity temperature characteristics or withstand voltage are lowered, and the amount of electrostriction tends to increase as the voltage is applied. On the other hand, if there are too many knives, the dielectric ratio is lowered, and the life characteristics and withstand voltage tend to deteriorate. The content of the oxide of ^ f R relative to (4) can be 4] = 撼..., η and η ^ . 耳, 6 to 12 moles, or 7 to 11 moles. The oxide of R has a major effect. -R ^ ", the strong dielectric property of f aBTiG2+m, the inclusion of the emulsion of the R, is wm ^ -hr±. On the eve, there is a tendency for the withstand voltage to decrease and the expansion and contraction to become larger. On the other hand, once the peroxide is selected from the group consisting of at least a few and a group of Lu, it is preferably Gd.

Mn, Cr, Co and? 6 oxide

Ba ΤίΠ ^ - 3 has a relative 100 莫 〇 Τ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Τ Different ears, or 1·〇~2.0 moules. tendency. s ancient;, swear words, the characteristics of the life will have a deteriorating top. On the other hand, once too much, the capacity I, w _ # # u A + In addition to the lower dielectric ratio, the grain characteristics will also deteriorate in the valley 12 2030-9390-.pF; F〇 Rever769 200846300

The content of the oxide of Si Li Ab Ge and B may be 3~ in terms of Si 〇 2, Li 2 〇 3, Al 2 〇 3, (10) or _ in terms of 莫 耳 Ba 〇 Ti 〇 9 moles, 4 to 8 moles, or "mole. When the content of the above oxide is too small, the life characteristics tend to deteriorate in addition to the decrease in the dielectric constant. On the other hand, if there are too many, the capacity temperature characteristics tend to deteriorate. Further, among the above-mentioned oxides, it is preferable to use an oxide of Si because of the advantage that the improvement effect of characteristics is large. In the present embodiment, by containing the above-mentioned predetermined amounts of the above respective components, the dielectric ceramic device composition can be fired in a reducing atmosphere, the amount of electrostriction at the time of applying the electric hair can be reduced, and the capacity temperature characteristics can be improved. , specific dielectric ratio, :: and the accelerated life of the insulation resistance. In particular, it is possible to effectively alleviate the dependence on the application of electromigration or the electrostriction when voltage is applied because it contains the parent seal Ba»Tl〇m. In the case of 1: : "Because of the high content of Ba gas, it is possible to maintain the above characteristics and improve the capacity temperature characteristics and withstand voltage. Moreover, in this specification, although in terms of chemistry = oxide, however, in each oxide::, each state can also be expressed by a stoichiometry. The ratio of the knives is determined by the amount of metal contained in the oxide or composite emulsion constituting each component. The thickness of the oxide dielectric layer 2 in the upper or composite oxide is not particularly limited as long as the use of the Taman capacitor is suitable. The mouth should be laminated 13 030 9390-pp. Forever769 200846300 Internal electrode Layer 3 Although the internal electrode layer 3 contains the right + V material is not particularly limited, since the dielectric layer of the structure of the virtual layer is resistant to reduction, it can be used relatively cheaply. Soapy winter metal. It can be Ni or Ni alloy as the base metal used as the conductive material. For Ni alloy, it can be selected from the group consisting of Xinshiqi and (1) kg. Prime and Νι In the case of the alloy, the content of I in the alloy is preferably 95% by weight. Further, in the Ni戋熹μ·human* Ah alloy, various fine components such as fine or smaller yttrium may be contained. The electrode layer 3 may be formed using a commercially available electrode paste. (4) The electrode layer 3 may be appropriately determined depending on the application, etc. Further, the external electrode 4 is made of an external electrode 4; In the present invention, it is also possible to use inexpensive L or the above-mentioned element: gold. The thickness of the external electrode 4 can be appropriately determined depending on the application, etc. Method of manufacturing the laminated ceramic capacitor 1 The laminated ceramic capacitor i is produced by the Korean printing method or sheet method in the same manner as the conventional laminated ceramic container, and after being fired, by printing or transcribing the external electrode and firing it. In the following, the manufacturing method is specifically described. The first step is to prepare a dielectric material c dielectric composition powder contained in a paste for the electric conductor layer, and to coat it, and to prepare the ruthenium layer. gum. The dielectric layer adhesive may be an organic coating which is obtained by kneading a dielectric material and an organic vehicle, or may be a water-based coating 2030-9390-PF; F〇rever769 14 200846300-. In the case of the % raw material, it is possible to use the oxides of the above components or a mixture thereof or a composite oxide, but it is also possible to form various compounds of the above oxides or composite oxides by other formations. Suitable: It is selected and mixed, and the above compound is, for example, a carbonate, an Oxalic acid salt, a nitrate, a hydroxide (Hydrazine), a metal compound, or the like. The content of each compound in the dielectric material can be determined depending on the composition of the above-mentioned dielectric ceramic composition after firing. In the state before coating, the particle size of the dielectric material is usually about 〜 1 to 1 # m. Further, among the raw materials of the above components, at least a part of the raw materials other than BamTi〇h may be directly used as each oxide or composite oxide, or may be converted into respective oxides by firing or composite oxidation. The compound of the substance, or a calcined powder which has been previously calcined may also be used. In addition, as for the part of the raw material other than BanZr〇2+n, it is also possible to take a false k from the mi, but once BajiOh and BaAO are burned, it is difficult to obtain the effect of the present invention, so It is preferred that the combination of the above is performed on a fake burner. Further, in terms of the raw material of BaffiTiG2+m, it is preferable to use the average particle pinch-wise = 〇·2~. In addition, as for the raw materials of the knives which are used for the knives, the granules with the average particle diameter between 〇·2~i# are used, and the raw materials are sintered and calcined. In the case of powder, the average particle diameter can also be controlled within the above range. The organic liquid refers to a mixture of 2030-9390-PF; F〇rever769 15 200846300 which dissolves the adhesive in an organic solvent. The adhesive used in the organic liquid is not particularly limited, and various types of olefin cellulose and polyethylene-based material are selected. In addition, the organic solvent to be used is not particularly limited, and may be used in response to a printing method or a thin plate method, etc., from rosin ((10) coffee (4), T-carbamate (butyl), (tetra), toluene, etc. It is suitably selected among various organic solvents. In addition, when a water-based paint is used as a gel for a dielectric layer,

The water-soluble liquid or the dispersing agent can be dissolved in the water-based liquid, and the disk insulator raw material is kneaded. The water-soluble liquid in the aqueous liquid is not particularly limited. For example, polyvinyl alcohol, cellulose, water-soluble pressure can also be used. Cree resin. The internal electrode layer is made of a conductive material composed of the above various conductive metals or alloys, or an oxide of an electrical material, an organometallic compound, a resinate, or the like after firing. The liquid is mixed and modulated. The outer 4-electrode adhesive can also be prepared in the same manner as the above-mentioned internal electrode layer. The content of the organic liquid in each of the gels is not particularly limited, and the usual content may be, for example, about 5 wt% of the adhesive and about 10 to 50 wt% of the solvent. Further, in each of the glues, an additive such as k from various knife chemicals, a plasticizer, a dielectric body, or an insulator may be contained as needed. The above total content is preferably 10% by weight or less. When the printing method is used, the dielectric layer adhesive and the internal electrode layer are laminated on a substrate such as PET, and cut into a predetermined shape, and then peeled off from the substrate to be formed. 2030-9390-PF; F〇rever769 16 200846300 In addition, when using the thin plate method, a dielectric thin layer is used to form a green thin plate, and then an internal electrode layer is printed thereon with #, and then laminated to form a green wafer. . The greening wafer was subjected to a release agent treatment before firing. In terms of the conditions of the release agent, the temperature increase rate is preferably between time; the temperature is preferably maintained between A and A; and the temperature retention time is preferably between 0.5 and 24 hours. In addition, the firing environment can be air or a reducing environment. The environment in which the wafer is fired can be appropriately determined depending on the type of the conductive material in the internal electrode layer, but when a base metal such as Ni or a Ni alloy is used as the conductive material, the partial pressure of oxygen in the firing environment is It is preferably between 1 〇 and 10 1 DMPa. When the oxygen partial pressure is less than the above range, the conductive material of the inner electrode layer is abnormally sintered, and is blown in the middle. Further, when the oxygen partial pressure exceeds the above range, the internal electrode layer tends to oxidize. Further, the temperature at the time of firing is preferably between 1 〇〇〇 and 14 〇〇 ° C, and is preferably between 110 (M36 (TC). Once the temperature is maintained below the above range, Densification becomes insufficient; when it exceeds the above range, it is easy to cause deterioration of the capacity temperature characteristics caused by abnormal sintering of the internal electrode layer, or deterioration of capacity temperature characteristics due to diffusion of the internal electrode layer constituent material. The dielectric ceramic composition is prone to reduction. In other firing conditions, the heating rate is between 5 〇 and 5 〇 (between rc/hour, preferably between 200 and 30 (TC/hour). More preferably; the temperature retention time w is preferably between 0 and 5 to 8 hours, preferably between 1 and 3 hours. Cold 2030-9390^PF; FOrever769 17 200846300 but the speed is between 50 and 5 { ) Qt: Better between hours. In addition, ... between 2〇o~3〇(rc/ #^, 粍成%境 to better the original environment, which, in the context of the original environment ... The column is to humidify the mixed rolled body of N2 and bismuth, and the user is better. In the evasive environment, ., ^ ^ A 70 In the case of the capacitor element body, the yoke is annealed. The fire treatment is to re-oxidize the dielectric layer, because the annealing temperature is extended by the TD ^ . NT u (IR sending) A), so the reliability can be improved. ▲The oxygen partial pressure in the annealing environment is better than that between the nm and the nano-Pa.--Oxygen is not up to the above-mentioned normalization, and the above-mentioned _, internal electricity = :::: Propensity.

The phenomenon that the layer reacts with the insulator semi-finished product (prime) is deteriorated, the IR is lowered, and the IR life is reduced. It consists only of the 过/ dish over-private and cooling process. That is to say, the temperature holding time can also be zero. In this case, the temperature is kept synonymous with the highest temperature. In other annealing treatment conditions, the temperature retention time is between 〇2 and 2, and the temperature is maintained at a temperature between 500 ° C and 11 〇〇, which is better because the oxidation of the dielectric layer may not be sufficient. Easy to shorten. On the other hand, not only the internal electrode layer is oxidized, but also preferably 1100 ° C or less. When the temperature is not within the above range, 'IR will decrease. In addition, the temperature will decrease as the temperature remains above the above range, and the internal electrode is prone to the capacity temperature characteristics. The annealing treatment can also be better between 2%. Between 1 and 1 hour is better; the cooling rate is preferably between 50 and 500 ° C / hour, preferably between 1 and 3 ° c. 2030-9390-PF; Porever 769 18 200846300 Further, it is preferable to use, for example, a humidified n2 gas or the like. In the above-mentioned decarburizing agent treatment, firing and annealing treatment, for the step of humidifying the N2 gas or the mixed gas, for example, a wetter or the like may be used. In this case, the water temperature is between 5 and 75. € is better. Further, the release agent treatment, the firing and the annealing treatment may be carried out continuously or separately. As described above, barrel polishing or sandblast polishing is performed on the obtained capacitor element body, end surface grinding is performed, and the external electrode is printed or transferred by a paste and fired to form the external electrode 4. Then, the coating layer can be formed on the surface of the external electrode 4 by means of gold or the like as needed. In this way, the laminated Taman capacitor of the present invention produced by the present invention can be used in various electronic devices or the like by being mounted on a printed circuit board or the like by means of a hand-held holder or the like. (Second Embodiment) A laminated Tauman capacitor according to a second embodiment of the present invention and a method for producing the same, a composition of the dielectric ceramic composition, a method for producing the same, and a dielectric of the first embodiment The composition of the ceramic composition and the manufacturing method thereof are different in the following months, and the rest are the same, and therefore, the description of the overlapping portions is omitted. The oxide composition of at least one of the group consisting of the qth point, the 自, Cr, Cr, 〇 and Fe represented by the general formula of the dielectric body composition of the second embodiment The second component is composed of an oxide selected from at least one element selected from the group consisting of Si, Li, A1, Gem_3〇9390~PF^F〇rever769 19 200846300. In the general formula, R is the first one. , ingredients. In the above-mentioned general formula, the same base is used in the above-mentioned formula, such as Gd 〇.8^a^0·96, preferably 0.83 客93, ^ 〇. 91; 〇 · 0·2, 隹 隹 〇 〇 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 55 0. 8 6 0. 09 more preferably 0. 64 〇. 31 ; 〇 - 24$dS 0.39, preferably 〇. 26ScU 〇.36, more preferably 〇·27 〇.〇2$eSO.〇9 It is 0. 04 乂 乂 1 soil is 0· 03$ 〇· 〇8, more $β〇·07; and more preferably 1. 03 α $1.15, preferably 1〇2$ α $112, ^ α ^ 1· 1〇〇

The dielectric ceramic composition has 〇·$~3· 〇 Mo relative to B^Ti〇2+ffi (where: 99·$ i· 01) contained in the 100 mA f 1 component The second component (in terms of oxide) and the third component (in terms of oxide) of 3 to 9 moles are described in the ear. In the dielectric ceramic composition of the present embodiment, after firing, Next, the "^(7)... contained in the first component is sufficiently solid-dissolved in a perovslute structure lattice type crystal structure in which the A site (Site) is placed in the alkaline earth group R, and the B portion thereof is Inserted 訏 and in the above general formula, once a is too small, the specific dielectric ratio is 203 〇-93 90-PF; Forever 769 20 200846300 lowers the tendency; 曰a speaks I & θ, - a is too large 'The temperature characteristics, high temperature acceleration life', the breakdown voltage and the amount of electrostriction tend to deteriorate. Further, if b is too large, the dielectric constant tends to decrease; the small two-degree property, the high-temperature accelerated life, the breakdown voltage, and the amount of electrostriction tend to deteriorate. In the general formula, once C is too large, the tendency to decrease is small; once C is too small, 1 sheep has an ancient fantasy, and the characteristics of the wind, the acceleration of the high temperature, the breakdown voltage, and the amount of electrostriction tend to deteriorate. Further, if the thickness is too large, the dielectric constant tends to decrease. When (4) is small, the temperature characteristics, the high-temperature accelerated life, and the amount of electrostriction tend to deteriorate. In the above general formula, if e is too large, the temperature characteristics are: if the two tendencies are too small, the accelerated life of the high temperature will deteriorate, and... if the α is too small, the temperature characteristics deteriorate. The tendency is that if α is too large, the reliability tends to deteriorate. Further, in this embodiment, when the amount of the second component added is too large, the temperature characteristics, the high-temperature accelerated life, the breakdown voltage, and the electrostriction denier 2 tend to deteriorate; if too much, the specific dielectric ratio will be Reduction: When the amount of addition of the third component is too small, the acceleration of the life, the breakdown voltage, and the amount of electrostriction tend to deteriorate. One: If the amount is too large, the dielectric constant tends to decrease. - In the manufacture of the dielectric ceramic composition of the present embodiment, the method of manufacturing the dielectric ceramic: photoreceptor composition of the above-mentioned i-th embodiment can be extended: the same method 'for example, the above components In the raw materials, at least part of the raw materials of BamTi024 2030-9390-PF; Forever7 6 9 200846300, can be oxides or complexes, or can be converted into oxides or composite oxidation by firing. The second person is pre-sintered and used as a baking powder. ° Other configurations and effects of the present embodiment are the same as those of the i-th embodiment. Although the heat is used as an embodiment of the present invention, α 疋, winter hair

It is not limited to the above embodiment, and σ I 卜1 is to be without departing from the spirit of the present invention.

Within the scope, various changes are possible. For example, in the above-described embodiment, the laminated electronic capacitor is used as the electronic component of the present invention. However, the electronic component of the present invention is not limited to the laminated ceramic capacitor, and the present invention has the above-described configuration. The dielectric layer can be used. Hereinafter, the present invention will be described in more detail, but the present invention is not limited to the examples. Example 1 First, Ba„Ti〇2+m having an average particle diameter of 0.5 (d) was prepared.

BanZr〇2+n, MgC〇3, Gd2〇3, MnO and Si〇2' were mixed by the pulverizer's at 12 〇 (the obtained mixed powder was sintered under TC, and the average particle diameter was adjusted. 0.6/zm of the smoldering powder. Then, the obtained sintered powder was wet-pulverized by a pulverizer for 15 hours, and then dried to obtain a dielectric material. Moreover, the MgC〇3 was contained in the dielectric after firing. In the bulk ceramic composition, it is used as Mg〇. In addition, once BanZr〇2+n, MgC〇3, other〇3, _ and Si〇2 are dissolved in BaeTi〇2+n, or MgC〇3, Gdz 〇3, Mn〇 and diffusion on the surface of BaiJi〇2+B, or MgC〇3 particles, Gd2〇3 particles, Mn〇2030-9390-PF; Forever769 22 200846300 is not limited to bulk A 〇 particles and si When the 〇2 particles are fixed on the surface of BaaTi〇2+ffi, the state of the powder. The powder obtained by the method is added as a powdery mash. As shown in the table, the dielectric materials of different amounts are prepared separately. (Sample code 1 1 to 35). In Table 1, with respect to 1 〇〇 耳 B BamTi〇~, each addition amount is compound oxide or oxidation Add the amount of conversion. Another knife

Further, in the present embodiment, a material of ffi = 1 shoulder 丨 < material as Ba»TiO core or n = = 1. 〇〇 () is used as BanZr〇h, respectively. Next, the obtained dielectric material: a weight of a polyvinyl butyral resin: 1 〇 by weight as a plasticizer of dioctyl phthalate (D〇p): 5 The weight portion, the alcohol as a solvent, and 100 parts by weight were mixed and gelled to obtain a gel for a dielectric layer. cold,

In addition, three weights (r〇Uer) were used to knead the weight of the Ni particles 44·6, the weight of the rosinol 52, the weight of the vinyl cellulose, the weight of the benzotriax, and the weight of the Benzotriax. The publicization, and the internal electrode sound with glue.曰 Further, a green sheet having a thickness of 3 Å " m after drying was formed on the PM film by using the above-mentioned dielectric layer adhesive. Next, the internal electrode layer paste was used thereon, and the electrode layer was printed in a predetermined pattern, and then the thin plate was peeled off from the PM film. A green sheet having an electrode layer was produced. Next, a plurality of green sheets having electrode layers are stacked, and a green layer is formed by pressurization, and then the green sheets are obtained by cutting the green sheets into a predetermined size. Then, the resulting 16 wafers were obtained, and the resultant was subjected to the removal of 2030-9390-PF according to the following conditions; Forever 769 23 200846300 was subjected to gel treatment and annealing to obtain a laminated ceramic body. Disconnector treatment conditions are heating rate muscle / hour, maintaining temperature: 2 navigation, temperature retention time: 8 hours, environment: air. The firing conditions are heating up @ · 0 Λ Λ.幵, clothing fan · 2 〇 0 t / hour, maintaining temperature: 1220 1380 C, temperature retention time: 2 hours, cooling rate: Gang. c / J is only a gas and humidified heart 诎 2 mixed gas (oxygen partial pressure annealing conditions are heating rate: 2 〇 rc / hour, holding temperature: 1 000 ~ U 〇〇 ° C, temperature holding time: 2 hours Cooling rate: 2 hours, ambient gas: humidified gas (oxygen partial pressure: i〇-7Pa). Moreover, the humidification system of the ambient gas during firing and annealing (4) leveling agent (wetter) ° Next, the end face of the obtained laminated ceramics was ground by a sandblasting method, and then the coating of 1 Ga was used as an external electrode, and the sample of the laminate of the first layer was obtained. In the present embodiment, as shown in Table i, a plurality of capacitor samples (sample number 35) are prepared, wherein the plurality of capacitor samples (sample number 35) are composed of a plurality of dielectric ceramic combinations different in composition. The material constitutes a dielectric layer. The size of the obtained capacitor sample is 3.2_Uminx3.2mm; the thickness of the dielectric layer is 2()^; the thickness of the internal electrode layer is 1·5/ζπι; and the inner Qiu Xueshi匕4· a 円The number of dielectric layers sandwiched by the ruthenium electrode layer is 10 〇 for each of the obtained capacitor samples, The amount of electrostriction caused by the specific dielectric constant us), the capacity temperature characteristic (TC), the high temperature accelerated life (mT), the breakdown of the voltage (withstand voltage), and the application of electricity can be measured by the method described below. 0 2030-9390-PF/Forever769 24 200846300

• Specific dielectric ratio ε S For the capacitor sample, the electrostatic capacitance c is measured at a reference temperature of 25 〇 c, using a digital LCR meter (YHP 4284A), inputting a cycle number of 1 kHz, and input signal level (signal of the measurement voltage MVrms). The specific insulating ratio ε s (no unit) is calculated from the thickness of the dielectric layer, the effective electrode area, and the measured electrostatic capacitance. The dielectric specificity is preferably higher, and in the present embodiment, the above is preferable, and 250 or more is more preferable. The results are shown in Table 1. 0 Capacity temperature characteristics (TC) For the capacitor sample, the electrostatic capacity was measured under a condition of 125×: digital LCR (4284A by YHP) at a frequency of 1 kHz and an input signal level (measured voltage) iVrras. And calculate the rate of change corresponding to the electrostatic capacity of the reference temperature of 25. In the present embodiment, it is good if the temperature is within 15%. The results are shown in Table 1. 冋}Accelerated life (HALT) Hunting The application of the DC voltage is maintained at an electric field of 200 ° C and 40 V / / zm and the life time is measured, and the high temperature accelerated life (T) of the capacitor sample is evaluated from the application to the insulation resistance drop in the present embodiment. a number The time of the stage is defined as the life. The high-temperature accelerated life is performed for each of the 10 electric samples. In the present embodiment, it is good for i Q hours or more, or 20 hours or more. The results are shown in Table 1. (withstand voltage) For the capacitor sample, a voltage value is obtained by applying a DC voltage at a boosting speed of 1 to oov/sec at a temperature of 25 ° C to a thickness of the dielectric layer when flowing with respect to a current of i 〇 mA ( The unit: v/"m) is the breakdown voltage, and measures the breakdown voltage of 2030-9390^PF; F〇rever769 25 200846300 to evaluate the withstand voltage of the capacitor sample. In the present embodiment, the breakdown voltage is SOV/μm or more. The results are shown in Table 1. The voltage application electrostriction amount is first fixed by attaching a capacitor sample to a glass epoxy substrate printed with an electrode of a predetermined pattern by soldering, and then fixing to the substrate. The capacitor sample 'applies a voltage under the condition of AC: mnns///m, the number of frequencies' and measures the vibration amplitude of the surface of the capacitor sample when the voltage is applied', and this is the amount of electrostriction. In the measurement of the vibration amplitude, a laser Doppler vibrometer is used. In addition, in the present embodiment, 1 G capacitor samples are used, and (4) the average value of the constant value is the amount of electrostriction. The lower one is preferable, and in the present embodiment, it is less than 1. The result is as shown in Table i.

2030-9390-PF; Forever769 26 200846300

The sample containing the amount of "Momo" is a sample outside the scope of the present invention.

As can be seen from Table 1, by controlling the dielectric composition of the dielectric composition within the scope of the invention, it is possible to maintain a good dielectric constant (ε, capacity temperature characteristic (10), and electrostriction amount, It is also possible to increase the breakdown voltage (withstand voltage) and the high temperature accelerated life (HALT). In contrast, once the composition of the dielectric ceramic composition falls outside the scope of the present invention, the characteristics may deteriorate. Example 2 Using BamTiOw And BaDZr〇2+n pre-sintered 6&(1,21')〇3 is replaced by 1^1〇2+111 and 11〇2+11, and the additive component is not false k In the same manner as in the Example, the capacitor sample was prepared in the same manner as in the sample No. 9 of the example, and was added to the dielectric ceramic composition in the present embodiment. The amount of Ba(Ti,Zr)〇3 is the same as the sum of the amounts of BamTi〇2+m and BanZr〇2+n added in sample No. 9 of Example i. In addition, Ba(Ti,Zr)〇 3, using Tl/Zr ratio and Ba/riOm and 27 2030-9390-PF in sample number 9 of Example 1; Forever769 200846300

The ratio of BanZr 〇 2+n is the same ratio of materials (that is, a material having a Ti/zr of about 100/41 is used). The results are shown in Table 2. [Table 2: Sample number of barium titanate, barium zirconate addition state ε s TC (125〇C) [%] South temperature accelerated life [hour] Destruction voltage [Υ/βΜ] Electrostriction amount [ppm] 9 BSmT i 〇2+πι ~f· B&nZr〇2+n 326 -15 25 57 7 Wood 36 Ba(Ti, Zr)〇3 1209 - 65 11 30 52 • The content of each component is relative to 1〇〇 The amount of the ear BaJi 〇 2+ni • The sample marked with "*" is a sample outside the scope of the present invention. It can be seen from Table 2 that when Ba(Ti,Zr) is used (h is substituted for BamTi〇2+ni& BanZr〇2+n, the amount of electrostriction caused by capacity temperature characteristics or voltage application, reliability is deteriorated. Moreover, although the reason is not clear, it may be due to the difference in diffusion caused by the addition of barium titanate and strontium ruthenate. That is, in the dielectric ceramic composition of the present invention, Since Ba«〇Ti〇2+m and BanZr〇2+n are added, Gd easily diffuses into the BaJiOh particles, and becomes a structure in which Gd is uniformly distributed in the particles. Therefore, 'the oxygen generated in the firing in the reducing environment When the defect is improved and the reliability is improved, the structure may not be obtained when Ba(Ti, Zr) 〇 3 is used. Example 3 The same powder A as in Example 1 was used, and the following The method shown in the above (the same as in the first embodiment) was made into a capacitor sample, and was evaluated in the same manner as in Example 1. The difference from Table 1 is that in Tables 3 and 4, the post-baking is shown in the following manner. Composition of an electric ceramic composition 2030 939〇-pp.F〇rever769 28 200846300 Also, it is said that the dielectric ceramic composition of this embodiment has: the first representation represented by the general formula of (BaeRb)a (TicZrdMge) 〇3! a second component composed of at least an emulsifier in the group and a third component selected from the group consisting of oxides of at least i of the group consisting of Si, Li, A1, and jin. In Tables 3 and 4, the molar ratio of the second component (Mn) and the third component (s. molar ratio) based on Ba gas contained in 100 mol of the first component and calculated in terms of oxide As is clear from the results shown in Tables 3 and 4, by controlling the composition of the dielectric ceramic composition within the predetermined range of the present invention, in addition to maintaining a specific dielectric constant (ε s), capacity The temperature characteristic (TC) and the amount of electrostriction can also increase the breakdown voltage (withstand voltage) and the high temperature accelerated life (HALT). In contrast, once the composition of the dielectric ceramic composition is controlled outside the scope of the present invention, Then, the characteristics will deteriorate. Example 4 First, prepare BamTi〇2+m with an average particle diameter of 〇·5# m (where m =1· 〇 〇1), BanZr〇2+n (where n=L _), MgC〇3, Gd2〇3, Mn〇 and Si〇2′ are mixed by a pulverizer to obtain a mixed powder. Powder B was prepared in the same manner as in Example 3 except that powder B was used instead of powder a, and was evaluated in the same manner as in Example 3. The amount and evaluation of each component in Powder B The results are shown in Table 5. Compared with Tables 3 and 4, it can be seen from the results shown in Table 5 that although 2030-9390-PF; Forever 769 29 200846300 * can be obtained even in the case of using powder B. The same results as in the case of using the powder A. However, in the case of comparing the same composition, the high-temperature accelerated life and the breakdown voltage in the case of using the powder A are superior. Example 5 BaC〇3, Zr〇2, MgCOs, GdUOs, MnO, Si〇2 and Ti〇2 were prepared, and wet-pulverized and dried by a pulverizer for 15 hours to obtain a dielectric material. The powder obtained by this method was used as the powder C. In the same manner as in Example 3 except that the powder C was used instead of the powder A, a capacitor sample was prepared and evaluated in the same manner as in Example 3. The amount of each component added and the evaluation results are shown in Table 5. As shown in Table 5, even when the powder C was used, the same results as in the case of using the powder A were obtained. Example 6 A material which was previously subjected to pseudo-sintering of MgC〇3, Gd2〇3, MnO and Si〇2 at 100 (TC) was prepared, and the average particle diameter was 以 by the pulverizer _ BaC〇3, Zr〇 2. The Tl02 powder was wet-pulverized and dried for 15 hours to obtain a dielectric material. The powder obtained by the method of the present invention was used as the powder. The powder was the same as in Example 3 except that the powder D was used instead of the powder A. The capacitor sample was prepared and evaluated in the same manner as in Example 3. The amount of each component added and the evaluation result are shown in Table 5. As shown in Table 5, even when the powder was used]), The same result as in the case of using powder A. 2030-9390-PF; Forever769 30 200846300

[Table 3] Sample Ba Gd Ti Zr Mg Mn powder TC high temperature acceleration; breakdown voltage electrostriction number abcde Si body as (125〇C) [% ] Lifetime [hour丄[V/"m] [ppm] *40 0,79 0.21 0 . 67 0. 28 0.05 1.7 4.2 A Wood 242 -12 29 55 7 41 0. 80 ϋ J 0. b8 0.38 0.04 1.9 4.5 A 267 -13 57 6 42 0.86 0.14 U.BO 0. 35 0.05 1.5 4.4 A 288 -14 21 Ji 58 5 43 0.89 0.11 U. B7 0.29 0.04 1.6 4.8 A 305 -14 27 56 7 44 0.92 0. 08 0.62 0; 30 0.08 1.5 4.5 A 327 -14 26 58 6 45 0.96 0. 04 0.60 0.36 0.04 1.6 4.2 A 358 -15 25 52 5 Butterfly 0. 99 ϋ.ϋΐ U. 64 0.32 0.04 1.9 4.6 A 425 *-18 *17 *39 Wood 10 Wood 47 0. 86 0.14 0.73 0.24 _〇 ."〇3 1.4 4.9 A Wood 248 -12 29 57 5 48 0. 8& 0.11 0.70 0.27 0.03 1.5 4.4 A 266 -14 31 58 6 49 U.91 (J.U9 U.BB 0.30 0. 04 1.3 4.2 A 276 -13 29 56 5 50 0. 93 0. 07 0.63 0.32 0.05 1.9 4.3 A 304 -14 28 57 7 51 0.84 0.16 0.60 "〇6 0. 04 1.6 4.6 A 336 -15 26 58 7 52 0.87 0.13 0.55 0.39 0.06 1.8 4.8 A 364 -15 25 53 8 ^53 0. 90 0.10 0.53 0. 39 ^08 ΙΛ 4.2 A 459 *-17 *18 Wood 38 *11 *54 0.93 0.07 0.70 0.23 0?07 1.5 4 2 A 42T ^-18 Wood 17 58 Wood 11 55 0.88 0.12 0. 69 0. 24 I 07 1.3 4.5 A 367 -15 26 59 8 56 0.91 0. 09 0.67 0.29 0.04 1.4 4.6 A 312 -14 28 56 6 57 0,92 0.08 0.61 〇.~32 0.07 1.5 4.3 A 299 -15 29 59 8 58 0.95 0. 05 0.60 0.36 0.04 1· 6 4.8 A 287 -14 30 58 7 59 0.91 0.09 0.58 0. 39 0.03 1.6 4.7 A 266 -14 30 57 8 Wood 60 0.87 0.13 0.56 0.41 0.03 1·9 4.6 A Bu 234 -13 29 58 6 *61 0.87 0.13 0.62 0.29 0J9 A · , 1.8 4.8 T 306 *-17 28 54 6 62 0.88 0.12 0.58 0.35 07 1.7 4.8 A 309 -15 31 55 6 63 0.94 0.06 0.61 0· 32 〇T〇7 1.4 4.0 A 311 -15 31 58 7 64 0.94 0. 06 0.65 0.30 0.05 1.3 4.5 A 302 _14 29 56 7 65 0· 85 0.15 0.66 0730 0. 04 1.5 4.3 A 299 -13 27 57 8 66 0.88 0.12 0. 68 0. 30 0.02 1.6 4.7 A 315 -13 26 53 6 *67 0.90 0.10 0.70 0.29 0.01 1.5 4.6 A 308 -12 氺18 51 7 In the present embodiment, α = 1.060 corresponds to the general formula of (BaaGdb) σ (TieZrdMge) 〇 3 • The sample labeled "氺" is the present invention. Samples outside the scope [Table 4] Sample number Ba Gd Ti Zr Mg Mn Si 1 powder as TC (125〇C) [%] South temperature accelerated life [hour] Destruction voltage electrostriction [ppm] abcde wood 68 0.91 0.09 0.65 0. 30 0.05 0.3 4.6 A 412 Wood-18 *18 *39 *10 69 0.89 0.11 0. 65 0.31 0.04 0.5 15 A 367 -15 27 Π 57 5 70 0.87 0.13 0. 62 0.33 0.05 1.0 4.5 A 324 -14 28 j 58 6 71 0. 91 0.09 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 0 14 29 1 58 7 *74 0.89 0.11 0. 60 0.34 0.06 — _ 4.0 Ba ti *233 -13 Π 28 53 8 2030-9390-PF; Forever769 31 200846300 ~^75 Γ7Λ 02 T〇8 ΈΈ 0.31 0.07 1.4 2.0 A *240 -15""" Wood 19 氺38 Wood 10 76 rjry 0. 93 υ. 07 0. 64 0. 32 0.04 1·6 3.0 A 277 -14 26 58 5 77 78 7Π 0. 90 0.89 A 〇 〇—〇·10 0. 58 0. 37 0.05 1.9 3.5 A 287 -15 25 57 6 0.11 0. 64 0.31 0.05 1.8 4.5 A 305 -13 30 55 5 iy on U. 88 n or? 0.12 0. 65 0. 29 0. 06 1.5 6.0 A 319 -14 29 58 1 7 〇U ψ〇-I U. 87 0.13 0. 65 〇. 28 0.07 1.6 9 .0 A 355 -15 28 56 7 氺81 0. 91 0.09 4ο JU, 0.61 Όί 0.05 1.5 10.0 A 394 -14 27 ^ 57 1 8 if ΐa, b, c, d, e and (BaaGdb, (TieZrdMge) The general form of 03 corresponds. f In the example, α = ΐ · 〇 6 〇. The sample labeled "氺" is a sample outside the scope of the present invention. [Table 5. Sample Ba Gd Ti Zr Mg powder I TC High temperature accelerated breakdown voltage Electrostriction number 〇〇abcde Mn Si body £ S (125 ° C) [% ] Life [hour] [V/"m] [ Ppm] 〇Z 0. 88 0.12 0. 63 0.32 0.05 1.4 4.3 B 308 -14 23 53 6 83 〇A 0. 89 0.11 0.65 0.31 0. 04 1.9 4.7 B 302 -15 21 54 6 84 0. 89 0.11 0.64 0.30 0. 06 1·8 4.6 B 298 -14 22 52 7 85 0. 91 0.09 0. 68 0.28 0. 04 1.7 4 3 B 310 -13 23 51 7 86 0. 90 0.10 0. 68 0. 27 0. 05 1.4 4.8 B 289 -14 24 54 8 87 0. 91 0. 09 0.65 0.29 0. 06 1.5 4.9 B 295 -15 22 52 6 88 0.88 0.12 0.61 0. 34 0. 05 1.8 4.2 C 301 -13 22 57 7 89 0. 88 0.12 0.63 0.32 0. 05 1.4 4.3 D 306 -14 22 53 7 The composition of U art a, b, c, d, e corresponds to the general formula of CBaaGdbMTicZrdMgOOs. • In the present example, α = 1. 〇 6 〇. • The sample labeled "氺" is a sample outside the scope of the present invention. Example 7

In addition to using Cr2〇3, C〇3〇4 or Fe2〇3 as a substitute for ΜηΟ, and using Li2〇3, Al2〇3, Ge2〇2 or Β2〇3 as a substitute for Si〇2, the rest A capacitor sample was prepared in the same manner as in Example 3, and evaluated in the same manner as in Example 3. The amount of each component added and the evaluation results are shown in Table 6. As shown in Table 6, it can be confirmed that even if Cr2〇3, C〇3〇4 or Fe2〇3 is used as a substitute for ΜηΟ, Li2〇3, ΑΙ2Ο3, Ge2〇2 or B2〇3 is used as Si 〇. In the case of a substitute of 2, the same characteristics can be obtained. 2030-9390-PF; Forever769 32 200846300 [Table 6] Sample Ba Gd Ti Zr Mg 2nd component 3rd component 1 H TC Two-temperature accelerated destruction voltage electrostrictive amount number abcde Seed quantity ε s [% ] Brother [hour] [V/^m] [ppm] 90 0.95 0.05 0.67 0.30 0.03 Μη 1.9 Si 4.5 A 267 -13 28 57 6 91 0.89 0.11 0.58 0.35 〇e or Cr 1.5 Si 4.4 A 288 -14 27 58 5 92 0.91 0.09 0.67 0.29 0.04 "Co 1.6 Si 4. 8 A 305 -14 27 1 56 -7. 93 0. 93 0. 07 0.62 0.32 0. 06 Fe 1.5 Si 4.5 A 327 -14 26 58 called 6 94 0.82 0.18 0.60 0.36 0.04 Μη 1.6 Li 4.2 A 358 -15 25 52 5 95 0.86 0.14 0.69 0.27 0. 04 Μη 1.5 A1 4.4 A 266 -14 31 58 6 96 0.89 0.11 0.66 0. 29 0.05 Μη 1.3 Ge 4.2 A 276 -13 29 56 5 97 0.92 0.08 0.63 0.30 0.07 Μη 1.9 B 4.3 A 304 -14 28 57 7 • The composition a, b, c, d, and e of each component corresponds to the general formula of (BaaGdb) “TieZrdMge” 〇3. • In the present embodiment, α = 1.060. • The sample marked with "*" is a sample outside the scope of the present invention.

[Embodiment 8] In the method for producing a powder crucible of the third embodiment, the powders of (BaaGdb) α (TicZrdMge) 〇3 are respectively adjusted to have different powders within the range of 〇·〇8 to 1·2〇, and In the same manner as in the third embodiment, a capacitor sample was prepared and evaluated in the same manner as in the third embodiment. The amount of each component added and the evaluation results are shown in Table 7. As shown in Table 7, it can be confirmed that good characteristics can be obtained in the case of 1·00$ α $丨.15. [Table 7 sample number Ψ〇〇Λ Del a ba b —Ti Zr Mg a Mn ε s TC (125〇C) [% ] High temperature accelerated life [hour] Destruction voltage [V/^m] Electrostriction amount [ppm ] cde Si powder QQU 0.89 Π oo 0.11 0.63 0.29 0.08 0.08 1.7 4.5 A 310 -15 wood 8 * 42 6 y〇D QQ U· 88 Π λα 0.12 0.65 0.28 0.07 1.00 1.8 4.3 A 321 -14 26 58 5 yy 1 Nn U· 90 Π oo 0.10 0. 59 0.33 0. 08 1.02 1.9 4.7 —A 305 -15 25 56 6 1UU U. ob 0.14 0.63 0. 30 0.07 1.04 1.6 4.4 A 312 -13 27 57 6 101 1 no 0.89 0.11 0.67 0.25 0.08 1.06 1.7 4.6 A 310 -13 26 58 7 102 1 no 0·93 0.07 0.60 0. 34 0.07 1.08 1.7 4.5 A 323 -14 28 59 5 lUo 1 A il * 0.87 0.13 0. 60 0. 33 0. 07 1.10 1.8 4.6 A 309 -15 25 56 6 104a )k1 f\AU 0.88 Π Q7 r〇2" 0. 62 0.31 0.07 1.15 1.8 4.5 A 306 -15 26 57 7 UflU U. 〇f 0.13 B Jr* r% 0. 64 0.28 0.08 1.20 1.7 Γδί A 287 -17 氺9 氺45 6 Marking "The sample of 氺 is outside the scope of the present invention Example 9 2030-9390-pp; p〇rever769 200846300 参, except using Sm, Ειι , Td or Dy oxide as The capacitor samples were prepared in the same manner as in Example 3 except for the substitution of Gd2〇3, and evaluated in the same manner as in Example 3. The amounts of the respective components and the evaluation results are shown in Table 8. [Table 8] ]

As shown in Table 8, it can be confirmed that even when an oxide of Sm, Eu, Td or Dy is used as a substitute for Gd2〇3, the same can be obtained first, and BanZr〇2+n, MgC〇3, Gd2〇3, MnO and Si〇2, and the above materials are mixed by a pulverizer, and the obtained mixed powder is pre-fired at 1 〇〇〇〇c to obtain an average particle diameter of 〇.2#m. Calcined powder. Then, the obtained calcined powder and the 63 Å 1 〇 2+ 1 powder having an average particle diameter of Q 6 #m were wet-pulverized and dried for 15 hours to obtain a dielectric material. The powder obtained by this method was used as the powder E. The electric grid sample was prepared in the same manner as in Example 1 except that the powder E was used instead of the powder A, and evaluated in the same manner as in the example 1. The amount of each component added and the evaluation results are shown in Table 9. 2030-9390-pp;F〇rever769 34 200846300

[Table 9·

• The content of hydrazine is relative to the amount of BaJi 〇 〇 • • • • • • • • • • • • 。 」 」 。 。 。 。 。 。 。 。 。 。 。

As can be seen from Table 9, by controlling the composition of the dielectric ceramic composition within the predetermined range of the present invention, in addition to maintaining the specific electric (ε S), the capacity temperature characteristic (TC), and the amount of electrostriction It can also improve the wide voltage (withstand voltage) and high temperature accelerated life (HALT). BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a plan view of a laminated ceramic capacitor according to an embodiment of the present invention. 2030-9390-PF; Forever769 35 200846300 . [Main component symbol description] 1 ~ multilayer ceramic capacitor; 2 ~ dielectric layer; 3 ~ internal electrode layer; 4 ~ external electrode; 10 ~ element body. 2030-9390-PF; Forever? 69 36

Claims (1)

200846300 * X. Patent application scope: 1 · An electric body pottery composition comprising: a dielectric body ceramic composition comprising: BaraTi〇2+ra (where m system 〇·99$ mg 1.00); BanZr〇2+n (where n is 〇·99 g 1. 〇i); an oxide of Mg; An oxide of R (wherein R is at least one selected from the group consisting of Sc, γ, u, Ce, pr, Nd, Pm, Sm, Eu, Gd, Tb, and Dy); Ho, Er, Tm, Yb And an oxide of at least one of the elements selected from the group consisting of Μη, Cr, Co, and Fe; and a group towel selected from the group consisting of Si, Li, yttrium, Ge, and B. The oxide of the element; A 70 is the ratio of the oxide or the composite oxide in terms of 100 mils of the above BanTi 〇 2+, as follows: • BanZr 〇 2+n : 35 to 65 m Mg oxide: 4~12 mol; R oxide: 4~15 mol; oxide of Mn, Cr, Co and Fe: 〇5~3 mol·, Si, Li, A, Ge and B Oxide: 3 to 9 m. 2. The ratio of the dielectric ceramics described in the first paragraph of the patent application, #1, +, and the above-mentioned BanZr〇2+n ratio of the above-mentioned BamTifl amil〇w of 100 moles is 40 to 55 moles. 3. A dielectric ceramic group having a general formula of (BaaRb)a (Ti 7 „ uZrdMge) 〇 3, and a dielectric ceramic group of Forever 769 200846300, wherein, The above general formula is an alkaline earth element, and in the above general formula, 0. 0. 96 ; 0· 04$ 0. 2; 0.55^c^0.7; 0· 24$ 0· 39 ; 0· 02$ eg 0 · 〇9 ; and a ^ L 15 ; Among them, BaffiTi〇2+m (where '〇·99<πι:^ΐ一一1.01) contained in the first component is compared with 100 簟, 々 amp • , , , , , , , , The ceramic composition further has an oxide of at least one kind of τ octa selected from the group consisting of Mn, rv r, Mn Cr, Co, and Fe, and 3 to g of molar is selected from the group consisting of Mn, rv r An oxide of at least one of the elements of the group consisting of ^Al, Ge, and B.卜4.--Electrical component, having a dielectric layer and an internal electrode layer composed of the dielectric ceramic composition of the i-th patent scope of the patent application, an electronic component having the second item of the patent application scope a dielectric layer composed of a dielectric ceramic composition, the σ|electrode layer. An electronic component having a dielectric layer composed of a third dielectric ceramic composition of the patent application and a etched layer described in the internal item. 2030-9390-PF; F〇rever769 38