[go: up one dir, main page]

TW200833824A - Solution for removing residue after semiconductor dry process and method of removing the residue using the same - Google Patents

Solution for removing residue after semiconductor dry process and method of removing the residue using the same

Info

Publication number
TW200833824A
TW200833824A TW096131491A TW96131491A TW200833824A TW 200833824 A TW200833824 A TW 200833824A TW 096131491 A TW096131491 A TW 096131491A TW 96131491 A TW96131491 A TW 96131491A TW 200833824 A TW200833824 A TW 200833824A
Authority
TW
Taiwan
Prior art keywords
residue
solution
dry process
same
ashing
Prior art date
Application number
TW096131491A
Other languages
Chinese (zh)
Other versions
TWI399426B (en
Inventor
Shingo Nakamura
Original Assignee
Daikin Ind Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Daikin Ind Ltd filed Critical Daikin Ind Ltd
Publication of TW200833824A publication Critical patent/TW200833824A/en
Application granted granted Critical
Publication of TWI399426B publication Critical patent/TWI399426B/en

Links

Classifications

    • H10P70/234—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/265—Carboxylic acids or salts thereof
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3209—Amines or imines with one to four nitrogen atoms; Quaternized amines
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
    • H10W20/081—
    • H10W20/425—
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Oil, Petroleum & Natural Gas (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Emergency Medicine (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

It is intended to provide a solution for removing the residue after dry process, which makes it possible to regulate the formation of a minute crack on a Cu surface without damaging Cu and a low-k film that cannot be achieved by the existing polymer-based removal solutions. Also, it is intended to establish a method of producing a semiconductor device with the use of the solution. More specifically speaking, a solution for removing the residue remaining on a semiconductor substrate after dry etching and/or ashing characterized by comprising a strong acid capable of forming a complex or a chelate with Cu, a polycarboxylic acid salt and water; and a method of removing the residue remaining on a semiconductor substrate after dry etching and/or ashing with the use of this solution for removing the residue.
TW096131491A 2006-08-24 2007-08-24 Removal of Residue Removal from Semiconductor Dry Process and Residue Removal Method TWI399426B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2006228405 2006-08-24

Publications (2)

Publication Number Publication Date
TW200833824A true TW200833824A (en) 2008-08-16
TWI399426B TWI399426B (en) 2013-06-21

Family

ID=39106837

Family Applications (2)

Application Number Title Priority Date Filing Date
TW101129657A TW201249972A (en) 2006-08-24 2007-08-24 Solution for removing residue after semiconductor dry process and method of removing the residue using the same
TW096131491A TWI399426B (en) 2006-08-24 2007-08-24 Removal of Residue Removal from Semiconductor Dry Process and Residue Removal Method

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW101129657A TW201249972A (en) 2006-08-24 2007-08-24 Solution for removing residue after semiconductor dry process and method of removing the residue using the same

Country Status (3)

Country Link
JP (1) JP4766114B2 (en)
TW (2) TW201249972A (en)
WO (1) WO2008023753A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102132385B (en) * 2008-08-25 2015-02-18 大金工业株式会社 Residue removing solution after semiconductor dry process and method of removing residue using same
US9396926B2 (en) 2010-03-25 2016-07-19 Fujifilm Corporation Cleaning composition, cleaning process, and process for producing semiconductor device

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5839226B2 (en) * 2011-11-08 2016-01-06 ナガセケムテックス株式会社 Resist residue removal composition
KR102051346B1 (en) 2016-06-03 2019-12-03 후지필름 가부시키가이샤 Processing liquid, substrate cleaning method and resist removal method
JP7060573B2 (en) * 2017-03-06 2022-04-26 株式会社フジミインコーポレーテッド A surface treatment composition, a method for producing the same, a surface treatment method using the surface treatment composition, and a method for producing a semiconductor substrate.
KR20250108373A (en) * 2024-01-08 2025-07-15 삼성에스디아이 주식회사 Composition for removing edge bead from metal containing resists, developer composition of metal containing resists, and method of forming patterns using the composition

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4308959B2 (en) * 1998-02-27 2009-08-05 関東化学株式会社 Photoresist stripping composition
JP4397800B2 (en) * 2003-12-24 2010-01-13 花王株式会社 Semiconductor device cleaning composition
JP2006114872A (en) * 2004-09-15 2006-04-27 Daikin Ind Ltd Removal liquid and removal method of copper deteriorated layer containing copper oxide
JP4667847B2 (en) * 2004-12-13 2011-04-13 花王株式会社 Release agent composition and method for manufacturing semiconductor substrate or semiconductor element using the release agent composition

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102132385B (en) * 2008-08-25 2015-02-18 大金工业株式会社 Residue removing solution after semiconductor dry process and method of removing residue using same
TWI473877B (en) * 2008-08-25 2015-02-21 大金工業股份有限公司 Residual removal of liquid after the semiconductor dry process and the use of its residue removal method
US9396926B2 (en) 2010-03-25 2016-07-19 Fujifilm Corporation Cleaning composition, cleaning process, and process for producing semiconductor device

Also Published As

Publication number Publication date
JPWO2008023753A1 (en) 2010-01-14
TW201249972A (en) 2012-12-16
JP4766114B2 (en) 2011-09-07
WO2008023753A1 (en) 2008-02-28
TWI399426B (en) 2013-06-21

Similar Documents

Publication Publication Date Title
TW200802603A (en) Method for removing damaged dielectric material
TW200833824A (en) Solution for removing residue after semiconductor dry process and method of removing the residue using the same
SG148975A1 (en) Methods and apparatus for cleaning deposition chamber parts using selective spray etch
CN104519664B (en) The cleaning method and printed circuit board of printed circuit board
WO2012122052A3 (en) Methods for contact clean
TW200728455A (en) PH buffered aqueous cleaning composition and method for removing photoresist residue
TW200610592A (en) Methods for wet cleaning quartz surfaces of components for plasma processing chambers
SG143125A1 (en) Chromium-free etching solution for si-substrates and sige-substrates, method for revealing defects using the etching solution and process for treating si-substrates and sige-substrates using the etching solution
TW200715398A (en) Resist removing method and resist removing apparatus
SG162680A1 (en) Wet clean compositions for cowp and porous dielectrics
MY163132A (en) Cleaning formulations
TW200741851A (en) Method of producing a semiconductor device and method of reducing microroughness on a semiconductor surface
WO2009008958A3 (en) Method of post etch polymer residue removal
TW200644048A (en) Manufacturing method of semiconductor device
WO2009025317A1 (en) Solution for removal of residue after semiconductor dry processing, and residue removal method using the same
WO2011056783A3 (en) Etching process for semiconductors
JP2014212319A5 (en)
EP2226834A3 (en) Method for physical force assisted cleaning with reduced damage
WO2007143476A3 (en) Apparatus and method for single substrate processing
WO2008046304A8 (en) A cleaning method for use in post etch and ashing a semiconductor wafer
SG142223A1 (en) Methods for characterizing defects on silicon surfaces, etching composition for silicon surfaces and process of treating silicon surfaces with the etching composition
WO2010090779A3 (en) Methods for preventing precipitation of etch byproducts during an etch process and/or a subsequent rinse process
WO2009072406A1 (en) Method for cleaning silicon wafer and apparatus for cleaning the silicon wafer
TW200604337A (en) Cleaning solution and manufacturing method for semiconductor device
TW200731394A (en) A reagent for surface treatment of semi-conductor