200832754 . 九、發明說明： 【發明所屬之技術領域】 本案係為-種光二鋪封裝結構，尤指—種僅具有一 種散熱路徑的光二極體封裝結構。 【先前技術】 請參閱第-®⑻、（b)，該第―_)係為習用發光二 極體封裝結構10之剖面示意圖，該第—剛係為該習用 發无二極體封裝結構10之俯視示意圖。其中該發光二極 體晶粒ιοί構裳於-基座102上，該基座1〇2係與一導熱 柱1〇3利用一焊料12進行兩者之接合，該導熱柱103並 與-導熱層1G5 (通常為銘材f或銅材f)連接。其中該 習用發光二極體縣結構1G更包含有數個導電接點1〇6 =及連接至-導電層刚的—導電架1()7，以透過導線1〇9 提供該發光二極體晶粒1G1發糾所需之電力。另外，由 =該導電層丨04與該導熱層105均為金屬材質，兩者之間 ^提供有-絕緣層1G8，以避免兩者之咖直接接觸而產 =的情形’最後以-封膠11G及—透鏡ui完成該習 用封裝二極體封裝結構10的封裝。 处由於該發光二極體晶粒101發光時，會產生大量的孰 I ’因此該發光二極體封裝結構1G便具有必要的散熱路 6 200832754 徑，以免該發光二極體晶粒ιοί因溫度過高而導致週遭元 件的損壞而降低使用壽命。在上述習用發光二極體封裝結 構10中，便具有以下兩種散熱路徑。第一散熱路徑是利 用該導熱柱103在該發光二極體晶粒101發光時將熱能傳 導至導熱層10 5散出。第二散熱路徑則是在該等導電接點 106與導電架107供應電流時，同時將熱能透過該等導電 接點106與導電架1〇7從該導電層104散出（因為該等導 電接106點、導電架1〇7與該導電層104皆為金屬材質， 故仍可傳導少許熱能，並將之散出）。 但是在上述該第一散熱路徑中，由於該基座1〇2與讀 導熱柱103之間係透過焊料12進行接合，而在焊接作業 時，則可能會因為作業的疏失，導致空氣滲入而在焊料 12中產生若干的氣泡，使導熱不完全，造成該習用發光 一極體封裝結構1〇使用壽命減少的現象。此時就必須仰 軔另外的該第二散熱路徑，但在該第二散熱路徑中，因該 導電架之斷面面積小，熱阻相對的較大，傳熱的能力有 限，而且如果因為打線作業的疏失而造成該等導電接點 106與導電架107之間接觸不良的現象，也會影響該發光 二極體晶粒101進行散熱的效率，而導致該發光二極體晶 粒封裝結構10使用壽命減少的問題。 曰 口為4發光一極體晶粒封裝結構⑴必須是其在焊接 作業或是打線作業沒有任何疏失的情況下，才能確保能约 丨貝利且有解地將熱能散出，所以建立在上述該發光二極 體封裝結構10下之發光二極體產品，若散熱不完全，我 7 200832754 們便無法切確地在第—瞎門 _進行品管檢測時，笋現:：/如’在該產品製造完 (如真声a X見產。口出現接觸不良的現象 有^^第便能夠知道該產品是在打線作業上 口。m—/無財賴妨散熱，屬喊 :疋’如果疋在焊接作業上有所疏失而導致並第一散200832754. Nine, invention description: [Technical field of invention] This case is a kind of light two-package structure, especially an optical diode package structure having only one heat dissipation path. [Prior Art] Please refer to the section -(8), (b), which is a schematic cross-sectional view of a conventional light-emitting diode package structure 10, which is a conventional diode-free package structure 10 A schematic view of the top. The light-emitting diodes are arranged on the susceptor 102, and the susceptor 1 〇 2 is bonded to a heat-conducting column 1 〇 3 by a solder 12, and the heat-conducting column 103 is thermally coupled. The layer 1G5 (usually the name material f or the copper material f) is connected. The conventional light-emitting diode structure 1G further includes a plurality of conductive contacts 1〇6= and a conductive strip 1()7 connected to the conductive layer to provide the light-emitting diode crystal through the wires 1〇9. The 1G1 is used to correct the power required. In addition, the conductive layer 丨04 and the heat conducting layer 105 are both made of a metal material, and the insulating layer 1G8 is provided between the two to avoid direct contact between the two coffee makers. The 11G and the lens ui complete the package of the conventional packaged diode package structure 10. Since the light-emitting diode die 101 emits light, a large amount of 孰I is generated. Therefore, the light-emitting diode package structure 1G has the necessary heat dissipation path 6200832754 diameter, so as to avoid the temperature of the light-emitting diode die ιοί Too high to cause damage to surrounding components and reduce service life. In the conventional light-emitting diode package structure 10 described above, the following two heat dissipation paths are provided. The first heat dissipation path utilizes the heat conducting column 103 to conduct thermal energy to the heat conducting layer 105 when the light emitting diode die 101 emits light. The second heat dissipation path is when the conductive contacts 106 and the conductive frame 107 supply current, and the thermal energy is dissipated from the conductive layer 104 through the conductive contacts 106 and the conductive pads 1 〇 7 (because the conductive connections are At 106 points, the conductive frame 1〇7 and the conductive layer 104 are both made of a metal material, so that a little heat energy can still be transmitted and dissipated. However, in the first heat dissipation path, since the susceptor 1 〇 2 and the read heat transfer column 103 are joined by the solder 12, during the soldering operation, air may be infiltrated due to work loss. A number of bubbles are generated in the solder 12 to make the heat conduction incomplete, resulting in a decrease in the service life of the conventional light-emitting diode package structure. At this time, it is necessary to rely on the other second heat dissipation path, but in the second heat dissipation path, since the conductive frame has a small sectional area, the thermal resistance is relatively large, the heat transfer capability is limited, and if the line is broken The problem of poor contact between the conductive contacts 106 and the conductive frame 107 caused by the loss of the operation also affects the efficiency of heat dissipation of the light-emitting diode die 101, resulting in the light-emitting diode die package structure 10 The problem of reduced service life. The 发光口 is a 4-light-emitting one-pole die-package structure (1). It must be in the case of no welding operation or wire-cutting operation to ensure that the heat can be dissipated and the heat is dissipated. The light-emitting diode products under the LED package structure 10, if the heat dissipation is not complete, I can't accurately detect the quality control in the first-door _ _ _ _: The product is manufactured (such as the real sound a X see production. The mouth has a bad contact phenomenon ^^ can know that the product is in the line of the job. m-/ no money to help heat, is shouting: 疋 'if疋 There is some negligence in the welding operation and it is the first
t路徑無法=地進行散熱時，便無法在品管檢測時立即 ::現α 土:?尤异5亥產品在打線作業無疏失而能夠順利發光 守，^妬確保在焊接時沒有發生作業上的疏失。 —η陳’我們可以知道’由於上述發光二極體晶粒 t二 具有上述兩種散熱途徑，在—發光二極體產 品元成後接受品管檢啊，便無法在#—時_發料產 品的械’是故，如何能夠輯出财—種散熱路徑的發 光二極體結構，而能夠在第一時間掌握其產品可靠性，進 而改善該習上述用發光二極體晶粒封裝結構1G之缺失， 便是本案最主要之目的。 、 【發明内容】 本案係為一種光二極體封裝結構，主要包含有：一光 二極體晶粒’用以發出—光線；-散熱基板，用以將該光 二極體晶粒所產生之熱能散出；一第一導電層，係形成於 該散熱基板上；一第一絕緣層，覆蓋於該第一導電層之上 •，一封裝基座，設置於該第一絕緣層之上方，該封裝基座 係以一承載空間來承載該光二極體晶粒；以及一導電結構 200832754 端以 ，其係貫穿該第-絕緣層與該封裝基座，而以 及一第二端來分別電性連接 弟續 導電層。 連接至邊先二極體晶粒與該第 节光根冓f ’本案所述之光二極體封裝結構，其中 糾一極體晶粒係可為-發光二極體晶粒。 八根據上述構想，本案所述之光二極體封裝結構，更包When the t path cannot be grounded, the heat can not be detected immediately at the time of quality inspection:: Now α soil: ? You Yi 5 Hai products can be smoothly illuminated without any loss in the line operation, ^妒 ensure that no operation occurs during welding Negligence. —η陈' We can know that because the above-mentioned light-emitting diode grain t two has the above two heat-dissipation methods, after the light-emitting diode product is formed into a product inspection, it cannot be issued at #— The product's machinery is the reason why it can be used to collect the light-emitting diode structure of the heat dissipation path, and can grasp the reliability of the product in the first time, thereby improving the above-mentioned light-emitting diode die package structure 1G. The lack of it is the main purpose of this case. [Invention] The present invention is a photodiode package structure, which mainly comprises: a photodiode die for emitting light; and a heat dissipating substrate for dissipating heat generated by the photodiode die a first conductive layer is formed on the heat dissipation substrate; a first insulating layer covers the first conductive layer, and a package base is disposed above the first insulating layer, the package The pedestal carries a photodiode die with a bearing space; and a conductive structure 200832754 end penetrates the first insulating layer and the package pedestal, and a second end electrically connects the mate Continued conductive layer. The photodiode package structure is connected to the edge diode die and the second photo 冓f ′, wherein the singularity die can be a luminescent diode die. According to the above concept, the optical diode package structure described in this case is further included.
根據上述構想，本案所述之光二極體封裝結構，豆中 該散熱基板包含··—導㈣，其細-織質所完成，用 以將該光二極體所產生之熱能散出；以及—第二絕緣層， 其係以—聚合物材質所完成並軸於該導熱層上，用以絕 緣該第一導電層與該導熱層。 ::::電接著材料’其係塗布於該封裝基座之底面與該 導電層之頂面上，使得騎裝基座能_定於該第-導電層上，該導電接著材料可以是銀膠或銲錫。 根據上述構想，本案所述之光二極體封裝結構，其中 该散熱基板係為一矩形構造。 根據上述構想，本案所述之光二極體封裝結構，其中 該封裝基座係以一矽材質所完成之封裝基座。 根據上述構想，本案所述之光二極體封裝結構，其中 該第一導電層係可以一 TiW/Cu/Ni/Au、一 Ti/Cu/Ni/Au、 Ti/Au/Ni/Au、一 AlCu/Ni/Au 或一 AuSn 合金所完成。 根據上述構想，本案所述之光二極體封裝結構，其中 該第一導電層係包含有一正極部以及一負極部，且該正極 部與該負極部係部分露出該第一絕緣層。 9 200832754 兮第^據上述構想’本案所述之光二極體龍結構，其中 ^ 絶緣層覆蓋於第一導電層上並形 該負極部之門，用以0成於該正極部與 I之間，用以釔緣该正極部與該負極部。 兮導2上述構想，本賴述之光二域封裝結構，其中 一貫穿孔結構所完㈣^ 二承ΪΪ—第二導電層，該導電結構之該第—端係位 面上载二間之底部’該第二端係位於該第一導電層之表 根據上述構想，本案所述之光二極體職結構，其中 二二核體晶粒係以〆打線或—覆晶之方式與該導電結 構元成電性連接。 【實施方式】 盖羽明參閱第二圖（a)、（b)，其中第二圖（a)係為本案為改 二白:缺失所發展出之一光二極體封裝結構20之較佳實 知=面7F意圖’而第二圖(b)係為本案為改善習用缺失 =毛展出之一光二極體封裝結構20之第一實施例俯視示 :圖如第二圖㈨所示，該光二極體封裝結構20主要包 3有光—極體晶粒201、一散熱基板202、一第一導電 “ 弟、纟巴緣層204、一封裝基座205以及一導電 :構206’其中該封裝基座2〇5係以一矽材質所完成之封 ，基座，其係設置於該第一絕緣層204上，並具有一承載 空間2051，用以承载該光二極體晶粒201，而該光二極體 10 200832754 • 晶粒201係為一發光二極體晶粒（LightEmittingDiode， 簡稱LED)，該第一絕緣層2〇4係覆蓋於該第一導電層 203上，並形成於該第一導電層2〇3所具有之一正極部 2031與一負極部2032之間，用以絕緣該正極部2031與 该負極部2032，另外，該第一導電層2〇3係可以一 TiW/Cu/Ni/Au 合金、一 Ti/Cu/Ni/Au 合金、一According to the above concept, in the photodiode package structure described in the present invention, the heat dissipating substrate in the bean comprises (4), and the fine-texture is completed to dissipate the heat energy generated by the photodiode; and a second insulating layer is formed by a polymer material and coupled to the heat conducting layer for insulating the first conductive layer and the heat conductive layer. :::: an electrical material is applied to the bottom surface of the package base and the top surface of the conductive layer such that the riding base can be positioned on the first conductive layer, and the conductive adhesive material can be silver Glue or solder. According to the above concept, the photodiode package structure of the present invention, wherein the heat dissipation substrate is a rectangular structure. According to the above concept, the photodiode package structure described in the present invention, wherein the package base is a package base completed by a material. According to the above concept, the photodiode package structure of the present invention, wherein the first conductive layer can be a TiW/Cu/Ni/Au, a Ti/Cu/Ni/Au, a Ti/Au/Ni/Au, an AlCu. /Ni/Au or an AuSn alloy finish. According to the above concept, the photodiode package structure of the present invention, wherein the first conductive layer comprises a positive electrode portion and a negative electrode portion, and the positive electrode portion and the negative electrode portion portion expose the first insulating layer. 9 200832754 According to the above concept, the photodiode structure of the present invention, wherein the insulating layer covers the first conductive layer and forms the gate of the negative portion for forming 0 between the positive portion and the I The anode portion and the negative electrode portion are used for the edge.上述 2 The above concept, the light two-domain encapsulation structure of the present, wherein the consistent perforation structure is completed (four) ^ two ΪΪ ΪΪ - the second conductive layer, the first end of the conductive structure is uploaded to the bottom of the two The second end is located at the surface of the first conductive layer. According to the above concept, the photodiode structure of the present invention, wherein the dinuclear crystal structure is electrically connected to the conductive structural element by means of a tapping line or a flip chip. Sexual connection. [Embodiment] Gai Yuming refers to the second figure (a), (b), wherein the second figure (a) is the second one of the case: the better one of the photodiode package structure 20 developed The second embodiment (b) is a top view of the first embodiment of the photodiode package structure 20 in order to improve the conventional use of missing hair. The figure is as shown in the second figure (9). The photodiode package structure 20 is mainly composed of a photo-polar body die 201, a heat-dissipating substrate 202, a first conductive “die, a samarium layer 204, a package pedestal 205, and a conductive structure 206”. The package base 2〇5 is sealed by a material, and the base is disposed on the first insulating layer 204 and has a bearing space 2051 for carrying the photodiode die 201. The photodiode 10 200832754 • The die 201 is a light emitting diode (LED), and the first insulating layer 2 覆盖 4 is over the first conductive layer 203 and formed on the first a conductive layer 2 〇 3 has a positive electrode portion 2031 and a negative electrode portion 2032 for insulating the positive electrode portion 2031 and the negative The pole portion 2032, in addition, the first conductive layer 2〇3 may be a TiW/Cu/Ni/Au alloy, a Ti/Cu/Ni/Au alloy, and a
Ti/Au/Ni/Au、一 AlCu/Ni/Au 或一 AuSn 合金所完成，並 φ 形成於該散熱基板202上，且該正極部2031與該負極部 2032分別部分露出該第一絕緣層2〇4。該導電結構2〇6 具有一第一端2061以及一第二端2〇62，係貫穿該第一絕 ‘ 緣層204，該第一端2061係位於該承載空間2051之底 - 部，該第二端2062則位於該第一導電層203之表面上， 使得該光二極體晶粒2 01可以一覆晶或以一打線（例如利 用圖式中的導線207)的方式與該第一端2〇61連接，進 而使该光一極體晶粒201與該第一導電層203完成電性連 • 接。除此之外，我們也可以在該封裝基座205之底面與該 第一導電層206之頂面塗布導熱性良好之一導電接著材 料A’使得該封裝基座205能夠更穩定的固定在該第一導 電層203上，而通常該導電接著材料a塗布在該封裝基 座205底面的面積以及在該第一導電層2〇3頂面的面積要 大於導電結構206之斷面面積，如此可以增加該封裝基座 205與該第一導電層203間的接觸面積以降低接觸熱阻。 . 以下再就本案之技術特徵做進一步的說明。 承上所述，其中該散熱基板202係包含有一導熱芦 11 200832754 202i以及-第二絕緣層2〇22，該導熱層⑽係可以一導 熱性良好之金屬材質（例如：|g、銅）所完成，、並用以將 ^光二極體晶粒期產生的熱能加以導出， 以具良好導熱能力的聚合物材質㈤ymer)所 3=以絕緣同樣為金屬材質的該第一導電層2〇31 Μ及该導熱層2021，另一方而甘士》… r 方面，其中该導電結構206係Ti/Au/Ni/Au, an AlCu/Ni/Au or an AuSn alloy is formed, and φ is formed on the heat dissipation substrate 202, and the positive electrode portion 2031 and the negative electrode portion 2032 partially expose the first insulation layer 2, respectively. 〇 4. The conductive structure 2〇6 has a first end 2061 and a second end 2〇62 extending through the first permanent edge layer 204. The first end 2061 is located at the bottom of the bearing space 2051. The second end 2062 is located on the surface of the first conductive layer 203, such that the photodiode die 201 can be flipped or twisted (for example, by using the wire 207 in the drawing) with the first end 2 The 〇61 is connected to further electrically connect the photodiode die 201 to the first conductive layer 203. In addition, we can also apply a conductive conductive material A' on the bottom surface of the package base 205 and the top surface of the first conductive layer 206 to enable the package base 205 to be more stably fixed. The area of the bottom surface of the package base 205 and the area of the top surface of the first conductive layer 2〇3 are larger than the cross-sectional area of the conductive structure 206, so that the conductive conductive material a is coated on the bottom surface of the package base 205. The contact area between the package base 205 and the first conductive layer 203 is increased to reduce the contact thermal resistance. The technical features of this case are further explained below. As described above, the heat dissipating substrate 202 includes a heat conducting reed 11200832754 202i and a second insulating layer 2〇22, and the heat conducting layer (10) can be made of a metal material having good thermal conductivity (for example: |g, copper). Completed, and used to derive the thermal energy generated by the crystal phase of the photodiode, with a polymer material having good thermal conductivity (5) ymer) 3 = the first conductive layer 2 〇 31 with the same metal as the insulation The heat conducting layer 2021, the other side of the Gans... r aspect, wherein the conductive structure 206
2- ¥通孔結構’鱗軌結構之㈣卿成有 :層2063 ’用以讓光二極體晶粒2〇1與該 =完成電性連接。而上述部分露出該第—絕緣層 :弟-導電層203係、可形成可利用一打線方式（如圖中所 :::線，與一電路板(在本圖中未示出）完成電 屮妾之¥電接點’如此-來’從圖中我們可以清楚看 略’本案所述之該光二極體封裝結構2G之散熱路獲與導 二路技係為同樣的雜’相較於先前技射之該發光二極 可封4結構的導電與導熱是兩種不同的散熱鱗，本案係 :利用該導電結構綱之設計，完成導電同時導埶的目 問題進而達到改善習用發光二極體封裝結構散熱不穩定的 | 士經由上述說明我們可以清楚的知道，本案最主要的技 二，即是藉由本案所述之該光二極體封裝結構2〇中該 =¾結構206的設計，使得該光二極體晶粒2〇1在通電發 \後’同時將熱能傳導至該散熱基板2〇2加以導散出，完 %同時導熱的功效，如此一來，便能將先前技術中習 务光二極體封裝結構2〇1中的兩種不同的散熱路徑整 12 200832754 δ成-種1、、、路【進岐善該·發光二極體封裝結構 散熱不蚊的情形，另—方面，當對應用於本案之光二極 體發光結構2G的產品進行品f檢測時，如果發現該光二 極體晶粒2〇1在發出光線時有亮度不足的現象時，即可知 道該光二極體封裝結構如的該導電結構高在製造過程 中發生瑕巍，導致導電的不完全，相較於先前技術中的該 習用光二極體縣結構謝，更能夠在第—時間内發現產 品的瑕藏’進而改善該制光二極體封裝結構ιό因為具 有兩種散熱路徑而無法精確掌握產品可靠性的問題。 。月ί閱弟—圖’其係為將多個本案所述之該光二極體 封裝結構2G進行組合應用示意圖。在先前技術中，由於 該習用發光二極體封裝結構具有兩種散熱路徑，且如先前 技術所述，该第二散熱路徑之散熱效率並不理想，因此必 須將忒白用發光二極體封裝結構的散熱裝置設計成極易 散熱的輻射狀，但因為現今光二極體廣泛應用於車燈、紅 綠燈或各式指示燈上，如此之設計便會造成多個光二極體 組合應用時’產生無法相互密合的現象，進而造成了空間 的浪費’由於如上所述，本案之光二極體封裝結構2〇將 該習用發光一極體封裝結構10之兩種散熱路徑整合為 一，便不會發生該第二散熱路徑散熱不理想的現象，如此 /來，輻射狀之設計便成為非必要，是故，在第二圖中的 該光^一極體封I結構之该散熱基板202便可設計為矩 形之構造，因為矩形具有相互連接時不會產生死角的特 性，因此本案所述之該光二極體封裝結構2〇便能利用此 13 200832754 ' 二士而可以在不產生面積浪費的情況下達成多個光二 二-封=結構20元成組合而不產生空間浪費的功效，而 夕固光了極體封裝結構2〇在組合完成後，如第三圖所示。 4㈣第®®(a)、（b)，其巾第四圖⑷係為 善習用缺失所發展出之光二極體封裝結構3〇另一實施例 之剖面示意圖，而第四_係為本案為改善習用缺失所 發展出之光二極_裝結構％另_#施狀俯視示意 ⑩ 目。如第關⑻(b)所示，我們可以清楚的看出在本實施 例中’遠光一極體結構3〇係為將複數個如同上述的承載 S光二極體晶粒3〇!的封裝基座3〇5裝設在同一散熱基板 3〇2上，如此一來，在將多個光二極體封裝結構邓加以 、、且口應用日守，就不需要在個別完成後再加以組合，而能夠 在-亥光一極體封I結構進行封裝時一次製作完成，因此， 父本貝轭例的裝設方式也可以降低在製程上的繁複程 度。而在本實施例中，其餘部分技術手段皆與上述實施例 相同，故在此不予贅述之。 綜合上述說明我們可以清楚的知道，本案最主要的技 術特徵即在於該導電結構206能夠在該光二極體晶粒通 毛發光時，將其所產生之熱能傳導至該散熱基板2〇2加以 散出，以完成導電同時達成導熱的最主要目的，如此一 來，便能將先前技術中該習用發光二極體封裝結構1〇中 的兩種散熱路徑整合成一種散熱路徑，進而改善該習用發 ， 光二極體封裝結構10散熱不穩定的情形，除此之外，由 於本案之該散熱基板202係為一矩形之構造設計，便能夠 14 200832754 在不產生面積浪費的條件下將多個光二極體封裝結構組 合，進而應用在各種發光二極體產品上，另一方面，本案 更可以在同一散熱基板上同時裝設複數個承載有光二極 體晶粒之封裝基座，以降低製作步驟的繁複程度，本案之 概念順利地改善先前技術中所產生之問題，但以上所述僅 為本發明案之較佳實施例而已，並不得侷限本案之申請專 利範圍’本發明得由熟習此技藝之人士任施匠思而為諸般 修飾，然皆不脫如附申請專利範圍所欲保護者。 【圖式簡單說明】 • 本案得藉由下列圖式及說明，俾得一更深入之了解： 第一圖⑻，其係為習用發光二極體封裝結構之剖面示意 圖。 ^ # $ —®(b)，其係為f用發光二極體縣結構之俯視示意 圖。 第二圖⑻，其係為本案之光二極體封裝結構之較佳實施 例剖面示意圖。 、 ^圖⑻’其係林案之光二_聽結構之較佳實施 例俯視示意圖。 第三圖，其係為將多個本案所述之該光二極體封裝結構進 行組合應用示意圖。 弟四_) ’其麵本㈣改善f躲失所發展出之光二 15 200832754 極體封裝結構另一實施例之剖面示意圖， 第四圖(b)，其係為本案為改善習用缺失所發展出之光二 極體封裝結構另一實施例之俯視示意圖。 【主要元件符號說明】 本案圖式中所包含之各元件列示如下：2- ¥ Through-hole structure 'Square track structure (4) Qing Cheng has: Layer 2063 ′ is used to make the photodiode die 2〇1 and the = complete electrical connection. The above portion exposes the first insulating layer: the conductive layer 203, which can be formed by using a wire bonding method (as shown in the figure:::, and a circuit board (not shown in the figure)).妾之¥ electric contact 'so-to' from the figure we can clearly see that the heat dissipation path of the optical diode package structure 2G described in this case is the same as that of the second-circuit technology system. The conductive and thermal conduction of the structure of the light-emitting diode can be two different heat-dissipating scales. In this case, the design of the conductive structure is used to complete the problem of conducting and guiding the light, thereby improving the conventional light-emitting diode. The heat dissipation of the package structure is unstable. According to the above description, we can clearly know that the most important technology of the present case is that the design of the photodiode package structure 2 in the photodiode package structure described in the present invention is such that The photodiode die 2〇1 conducts heat energy to the heat dissipating substrate 2〇2 at the same time, and conducts the heat transfer effect, so that the prior art can be used. Two of the photodiode package structures 2〇1 The heat dissipation path of the whole 12 200832754 δ into -1,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, When the product is tested for product f, if the photodiode die 2〇1 is found to have insufficient brightness when emitting light, it can be known that the photodiode package structure such as the conductive structure is high during the manufacturing process.巍, resulting in incomplete conductivity, compared to the conventional light diode structure in the prior art, it is more able to find the product's stagnation in the first time' and thus improve the diopter package structure ό because it has two The problem of the reliability of the product cannot be accurately grasped by the heat dissipation path. The monthly application is a schematic diagram of a plurality of application of the photodiode package structure 2G described in the present application. In the prior art, The conventional light-emitting diode package structure has two heat dissipation paths, and as described in the prior art, the heat dissipation efficiency of the second heat dissipation path is not ideal, so it is necessary to use the light-emitting diode for whitening. The heat sink of the package structure is designed to be extremely heat-dissipating, but because the current light-emitting diodes are widely used in lights, traffic lights or various types of indicator lights, such a design will result in the combination of multiple photodiodes. The phenomenon that they cannot be close to each other causes a waste of space. As described above, the light diode package structure of the present invention integrates the two heat dissipation paths of the conventional light-emitting diode package structure 10 into one. The heat dissipation of the second heat dissipation path is unsatisfactory. Therefore, the radial design is unnecessary. Therefore, the heat dissipation substrate 202 of the optical structure of the first embodiment can be sealed. Designed as a rectangular structure, since the rectangle has the characteristic of not forming a dead angle when connected to each other, the photodiode package structure described in the present application can utilize this 13 200832754 'two s. A plurality of light two-two seals are combined to form a structure of 20 yuan without a waste of space, and the eccentric light encapsulation structure 2 is completed after the combination is completed, as shown in the third figure. Shows. 4(4)(®)(a), (b), the fourth figure (4) of the towel is a schematic cross-sectional view of another embodiment of the photodiode package structure developed by the lack of good use, and the fourth _ is the case The light diode developed by the improvement of the lack of use _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ As shown in the eighth (8) and (b), it can be clearly seen that in the present embodiment, the 'high-beam one-pole structure 3' is a plurality of package bases carrying the S-light diode crystals as described above. The seat 3〇5 is mounted on the same heat-dissipating substrate 3〇2, so that when a plurality of light-diode package structures are applied, and the mouth is applied, it is not necessary to combine them after individual completion. It can be fabricated once in the package of the -Huangyi body-packed I structure. Therefore, the installation method of the parent-child yoke example can also reduce the complexity in the process. In the present embodiment, the rest of the technical means are the same as those of the above embodiment, and therefore will not be described herein. Based on the above description, we can clearly understand that the most important technical feature of the present invention is that the conductive structure 206 can conduct the heat energy generated by the photodiode to the heat dissipating substrate 2〇2 when the photodiode is illuminated. In order to achieve the main purpose of achieving conduction and achieving thermal conduction, the two heat dissipation paths in the conventional LED package structure of the prior art can be integrated into a heat dissipation path, thereby improving the conventional hair. In the case where the heat dissipation substrate 202 is a rectangular structure design, the light-emitting substrate 202 of the present invention has a rectangular structure design, and the plurality of photodiodes can be used without any waste of area. The package structure of the body is applied to various light-emitting diode products. On the other hand, in this case, a plurality of package bases carrying photodiode grains can be simultaneously mounted on the same heat dissipation substrate to reduce the manufacturing steps. To the extent that the concept of the case has successfully improved the problems arising in the prior art, the above description is only preferred in the present invention. Embodiments only, and not limitations of the scope of the patent application for the case of 'the present invention is obtained by a person skilled in the art of this application to any modification of the thinking sorts Carpenter, then neither off as desired range appended patent protector. [Simple description of the diagram] • This case can be further understood by the following figures and descriptions: The first figure (8) is a schematic cross-sectional view of a conventional LED package structure. ^ # $ —®(b), which is a top view of the structure of the light-emitting diode county. The second figure (8) is a schematic cross-sectional view of a preferred embodiment of the photodiode package structure of the present invention. ^ Figure (8)' is a schematic view of a preferred embodiment of the light structure of the forest. The third figure is a schematic diagram of a plurality of combinations of the photodiode package structures described in the present application.弟四_) 'The face of it (4) to improve the development of the light of the loss of the second light 15 1532 3232 A schematic diagram of another embodiment of the polar body package structure, the fourth figure (b), which is developed for the purpose of improving the lack of use in this case A top view of another embodiment of the photodiode package structure. [Explanation of main component symbols] The components included in the diagram of this case are listed as follows:
# 習用發光二極體封裝結構10 發光二極體晶粒101 封裝基座102 導熱柱103 導電層104 導熱層105 導電接點106 導電架107 絕緣層108 導線109 封膠110 透鏡111 光二極體封裝結構20 光二極體晶粒201 散熱基板202 導熱層2021 第二絕緣層2022 第一導電層203 正極部2031 負極部2032 第一絕緣層204 封裝基座205 導電結構206 第一端2061 第二端2062 第二導電層2063 導線207 導線208 光二極體封裝結構30 16 200832754# 习 二极管 二极管 二极管 二极管 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 10 Structure 20 photodiode die 201 heat sink substrate 202 heat conducting layer 2021 second insulating layer 2022 first conductive layer 203 positive portion 2031 negative portion 2032 first insulating layer 204 package base 205 conductive structure 206 first end 2061 second end 2062 Second conductive layer 2063 wire 207 wire 208 light diode package structure 30 16 200832754
光二極體晶粒301 導熱層3021 第一導電層303 負極部3032 封裝基座305 第一端3061 第二導電層3063 導線308 散熱基板302 第二絕緣層3022 正極部3031 第一絕緣層304 導電結構306 第二端3062 導線307 導電接著材料A 17Photodiode die 301 Thermally conductive layer 3021 First conductive layer 303 Negative portion 3032 Package base 305 First end 3061 Second conductive layer 3063 Conductor 308 Heat sink substrate 302 Second insulating layer 3022 Positive portion 3031 First insulating layer 304 Conductive structure 306 second end 3062 wire 307 conductive material A 17