200832747 九、發明說明： 【發明所屬之技術領域】 本發明係關於一種發光裝置，特別是關於一種發光 二極體裝置。 x 【先前技術】 ^ 發光二極體（light-emitting diode，LED)是一種由 半導體材料製作而成的發光元件。由於發光二極體係屬 Q叙光，具有耗電i低、元件寿命長、反應速度快等優 點，再加上體積小容易製成極小或陣列式的元件，因此 近年來，隨著技術不斷地進步，其應用範圍涵蓋了電腦 或家電產品的指示燈、液晶顯示器的背光源乃至交通號 誌或是車用指示燈，甚至將來亦有機會作為照明用之光 * 源。 ^ 然而，發光二極體仍然存在著一些待改善的問題， _ 例如散熱、發光功率不足及發光效率不佳等問題，皆是 現今發光二極體尚無法全面取代光源用途的缺點。 除上述缺點之外，請參照圖1A，其圖1A為習知的 發光一極體裝置之示意圖。習知的一種發光二極體裝置 1所發出的光線主要是集中於其光軸0S1附近，意即， 越接近光軸OS 1的區域，光線的強度越強。因此，發 光一極體震置1係適用於小角度、能量集中的照明器 材’例如手電筒、檯燈或交通號誌。倘若應用於液晶顯 不為的背光源時，則必須搭配導光板及擴散板的使用， 200832747 以提供液晶顯示面板均勻的背光源。 體f =干：： '圖1 B，其為習知的另-種發光二極 體衣置之不思圖。習知的—種發 提供均句且具有大範？衣置2為了能 …蓋-發光二極體元 OS2的周圍係具有 ^ 罪近光軸 二接雕77所吝斗 亚错由凹部211將發光 月且 生之光線有效地予以折射，使其遠離光 軸OS2之後再射出透鏡21，藉以增加其發光面積。 面浐表广：^雖然上述方式增加了發光二極體的發光 面積=而；般的發光二極體所造成的光場 :起並發光時，其光場形狀將會有重疊㈣顧^ ’如此-來’光強度不均勻的現象仍然無法改善。 強产=二如何提供一種能夠調整光場形狀及光場 強度刀佈的發光二極體裝置及其製造方法，實屬當前重 【發明内容】 有鑑於上述課題，本發明之目的為提供—種能夠產 生均勻的光強度分佈之發光二極體裝置及其製造方法。 一本；明之另一目的為提供一種能夠配合其應用場 δ不同而可凋整设计其光場形狀之發光二極體裝置及 其製造方法。 緣是’為達上述目的，依據本發明之一種發光二極 200832747 體裝置包括一導熱基板、一第一 及一第-丰+ 體層、一發光層以 體層。弟一半導體層係形成於導 上，，:先層係形成於第一半導體層上，而第二;' 有複數個階級凸塊/、- h體層之-出光面係具 目的，依據本發明之—種發光二極體裝置 方法係包括以下步驟：形成—第—半導體層於一 熱基板之上；形成一择古 —丄1 珉^先層於弟一半導體層上；形成 -弟二半導體層於發光層上；以及移除部分之第二半導 體層’並於第二半導體層之—出光面形成複數個階級凸 塊0 為達上述目白勺，依據本發明之另一種發光二極體裝 置的製造方法係包括以下步驟：形成一第一半導體層於 一原始基板上；形成一發光層於第一半導體層上；形成 一第二半導體層於發光層上；將一導熱基板與第二半導 鲁體層結合·’移除原始基板；以及移除部分之第一半導體 層，並於第二半導體層之一出光面形成複數個階級凸 塊0 承上所述，因依據本發明之一種發光二極體裝置及 其製造方法，係於發光二極體裝置之出光面的半導體層 上形成階級凸塊，而階級凸塊係可為二元光學（Binary optical)凸塊，因此可藉由階級凸塊將發光層所射出之 光束的光場形狀，調整為所需要的三角形、四邊形或其 他形狀，並且可調整各階級凸塊的設計，以達到使光束 7 200832747 均勻分佈的目的。又再者’除了階級凸塊的設計之外， 亦可於發光路徑上另外設置—適當之透鏡（lens) 將透鏡設置於階級凸塊與光束照射之目的物之間， 藉以調整光束之光學特性，而使得應用更為廣泛。 【實施方式】 以下將參照相關圖式，說明依據本發明較佳實施例 之發光二極體裝置及其製造方法。 請參照圖2A，本發明較佳實施例之—發光二極體 裝置4係包括一導熱基板41、一第一半導體層ο、一 發光層43以及一第二半導體層料。 於本貝把例中，導熱基板4!之材質係可選自石夕、 石申化録、魏鎵、碳化mu氮化I呂、銅及 其組合所構成的群組。 弟/一半導體層42係形成於導熱基板41之上。發光 層：、係^成―於第—半導體層42上’且發光層Μ係產 生一光束。第二半導體層44係形成於發光層Μ上，且 於第二半導體層44之—出光面441係具有複數個階級 凸鬼C01而發光層43所產生之光束係射向第二半導 體層44之出光面441。 於j焉施例中，第一半導體層42係可為一 p塑摻 亡層而：—半導體層44係可為一 η型摻雜層，當然， 第=導體層42亦可為一 η型摻雜層而第二半導體層 亦可為Ρ型摻雜層，於此並不加以限制。 200832747 上述之第二半導體層44之此些階級凸塊c〇1依據 所需要的光場形狀及光場強度的不同，其係可為軸對稱 排列、非軸對稱排列或不規則排列，於此，係以不規則 排列為例。另外，在本實施例中，所形成之此些階級凸 塊C01係為具有平坦表面之二元光學（binary叩 凸塊來呈現，換言之，此些階級凸塊C01係具有0個 階層，其中N係為例如i、2、3…等之正整數。 八二而本餐明並不限制於此’例如，此此階級凸持 ⑽除了可為具有平坦表面之二元光學凸社外，2 為具有一曲形表面之凸塊，其剖面可為凸狀（如圖2b 所不）、凹狀（如圖2C所示）、波浪狀（如圖2d所示） 或其他形狀。需注意的是，為清楚顯示，圖2B至圖2D =僅緣出圖2A中虛線圓部分之各種階級凸塊之剖面示 • 技装，士全A "竹—‘200832747 IX. Description of the Invention: [Technical Field] The present invention relates to a light-emitting device, and more particularly to a light-emitting diode device. x [Prior Art] ^ A light-emitting diode (LED) is a light-emitting element made of a semiconductor material. Since the light-emitting diode system belongs to Q-spot light, it has the advantages of low power consumption i, long component life, fast reaction speed, and the like, and the small size is easy to be made into a very small or array type component, so in recent years, with the continuous technology Progress, its application range covers the indicators of computers or home appliances, the backlight of LCD monitors, traffic signs or vehicle lights, and even has the opportunity to be used as a source of light for lighting. ^ However, there are still some problems to be improved in the light-emitting diodes, such as heat dissipation, insufficient light-emitting power, and poor luminous efficiency. These are the shortcomings of today's light-emitting diodes that cannot completely replace the light source. In addition to the above disadvantages, please refer to FIG. 1A, which is a schematic diagram of a conventional light-emitting diode device. The light emitted by a conventional light-emitting diode device 1 is mainly concentrated near the optical axis OS1, that is, the closer to the optical axis OS1, the stronger the intensity of the light. Therefore, the illuminating one-pole illuminator 1 system is suitable for small-angle, energy-concentrated illuminating devices such as flashlights, desk lamps or traffic signs. If it is applied to a backlight with a liquid crystal display, it must be used with a light guide and a diffuser. 200832747 to provide a uniform backlight for the LCD panel. Body f = dry:: 'Figure 1 B, which is a conventional alternative to a light-emitting diode. The well-known - the kind of hair provides a uniform sentence and has a big fan? The clothing 2 is in order to be able to... the cover-lighting diode element OS2 is surrounded by the sin. The near-optical axis is connected to the yoke 77. The yoke is refracted by the concave portion 211 to effectively illuminate the light and the light. The optical axis OS2 is then injected out of the lens 21 to increase its light-emitting area. Wide range of surface: ^ Although the above method increases the light-emitting area of the light-emitting diode = and the light field caused by the light-emitting diode: when the light is emitted, the shape of the light field will overlap (4) In this way, the phenomenon of uneven light intensity still cannot be improved. How to provide a light-emitting diode device capable of adjusting the shape of a light field and a light field strength knife, and a method for manufacturing the same, which is currently in the light of the above-mentioned problems, and the object of the present invention is to provide a A light-emitting diode device capable of producing a uniform light intensity distribution and a method of manufacturing the same. Another object of the present invention is to provide a light-emitting diode device which can be designed to have its light field shape in accordance with its application field δ and a method of manufacturing the same. In order to achieve the above object, a light-emitting diode 200832747 body device according to the present invention comprises a heat-conducting substrate, a first and a first-first body layer, and a light-emitting layer body layer. a semiconductor layer is formed on the lead, wherein: the first layer is formed on the first semiconductor layer, and the second; 'there are a plurality of class bumps /, the -h body layer - the light surface device purpose, according to the present invention The method for illuminating a diode device comprises the steps of: forming a first-semiconductor layer on a thermal substrate; forming a first-order 丄1 珉^ first layer on a semiconductor layer; forming a second semiconductor Layered on the light-emitting layer; and removing a portion of the second semiconductor layer 'and forming a plurality of class bumps 0 on the light-emitting surface of the second semiconductor layer to achieve the above object, another light-emitting diode device according to the present invention The manufacturing method includes the steps of: forming a first semiconductor layer on an original substrate; forming a light emitting layer on the first semiconductor layer; forming a second semiconductor layer on the light emitting layer; and forming a thermally conductive substrate and the second half Leading the body layer to combine the 'removal of the original substrate; and removing a portion of the first semiconductor layer, and forming a plurality of class bumps 0 on one of the second semiconductor layers, because of the illumination according to the present invention The polar body device and the manufacturing method thereof are formed on the semiconductor layer of the light-emitting surface of the light-emitting diode device to form a class bump, and the class bump system may be a binary optical (Binary optical) bump, and thus can be formed by class convex The block adjusts the shape of the light field of the light beam emitted by the light-emitting layer to a desired triangle, quadrilateral or other shape, and can adjust the design of each class of bumps to achieve uniform distribution of the beam 7 200832747. In addition, in addition to the design of the class bumps, it can also be additionally provided on the light-emitting path - a suitable lens is placed between the class bumps and the object to be irradiated by the light beam, thereby adjusting the optical characteristics of the light beam. , making the application more extensive. [Embodiment] Hereinafter, a light-emitting diode device and a method of manufacturing the same according to a preferred embodiment of the present invention will be described with reference to the related drawings. Referring to FIG. 2A, a preferred embodiment of the present invention includes a thermally conductive substrate 41, a first semiconductor layer, a light emitting layer 43, and a second semiconductor layer. In the example of the present invention, the material of the thermally conductive substrate 4! may be selected from the group consisting of Shi Xi, Shi Shen Hua Lu, Wei Gallium, carbonized mu nitride I, copper, and combinations thereof. The semiconductor/semiconductor layer 42 is formed on the thermally conductive substrate 41. The light-emitting layer is formed on the first semiconductor layer 42 and the light-emitting layer is a light beam. The second semiconductor layer 44 is formed on the light-emitting layer ,, and the light-emitting surface 441 of the second semiconductor layer 44 has a plurality of class bumps C01, and the light beam generated by the light-emitting layer 43 is incident on the second semiconductor layer 44. Light surface 441. In the embodiment, the first semiconductor layer 42 may be a p-doped layer: the semiconductor layer 44 may be an n-type doped layer. Of course, the second conductor layer 42 may also be an n-type layer. The doped layer and the second semiconductor layer may also be a doped layer, which is not limited herein. 200832747 The above-mentioned class bumps c〇1 of the second semiconductor layer 44 may be axisymmetric, non-axisymmetric or irregular according to the required shape of the light field and the intensity of the light field. Take the irregular arrangement as an example. In addition, in the embodiment, the class bumps C01 formed are formed by binary optics having a flat surface (individually, the bumps C01 have 0 levels, wherein N It is a positive integer such as i, 2, 3, etc. 八二本本明明 is not limited to this 'for example, this class convex (10) can be a binary optical convex with a flat surface, 2 has A curved surface of a bump may have a convex shape (not shown in Fig. 2b), a concave shape (as shown in Fig. 2C), a wave shape (as shown in Fig. 2d) or other shapes. For the sake of clarity, Figure 2B to Figure 2D = only the cross-section of the various class bumps in the circled part of Figure 2A. • Technician, Shi Quan A " Bamboo - '
圖然貝際應用時則是代表發光二極體裝置4第― 半導體層44之所有階級凸塊⑽之形式。之弟— 9 200832747 排列而不會相互重疊，再 义± ^ 且丹加上其先％強度係均勻的分 布，將可提供一均勻的面光源。 -人，月參照圖4，纟為依據本發明較佳實施例之 ^光—極體I置之另_示意圖。於本實施例中，導 馬、土板41與第—半導體層42之間更可依序設置一絕緣 二Γ:黏著層46及一反射層47，以加強其光束使用 〜、鍵結月b力。其中，反射層之材質係選自鉑、金、 銀^巴、、鎳、鉻、鈦及其組合所構成的群組，絕緣層之 ’：貝係k自氮化鋁或碳化矽，而黏著層之材質係選自錫 I、錫銀膏、銀膏及其組合所構成之群組。 a值得一提的是，絕緣層45、黏著層46及反射層47 之。又置順序亦不限定於上述之順序，其可依據功效設計 的不同而可互換順序，或僅存在至少其中之一。 每A針對上述發光二極體裝置4,以下將分別以一第一 貝鈀例及一第一貫施例來說明發光二極體裝置4的製 造方法。 •[弟一貫施例] 明芩R?、圖5並同時參照圖6 A至圖6D，圖5為依據 本^明第一貫施例之—種發光二極體裝置的製造方法 之流程圖，而圖6A至圖6D為與圖5配合之發光二極 體裝置的示意圖。本發明第一實施例之#光二極體裝置 4的製造方法係包括步驟s〇1至步驟s〇4。 如圖6A所示，步驟s〇1係形成一第一半導體層42 200832747 於一導熱基板41上，於本實施例中，第一半導體層〇 係為一 η型摻雜層。如圖6B所示，步驟s〇2係形成一 發光層43於第一半導體層42上。如圖6C所示，步驟 S03係形成一第二半導體層44於發光層43上，於本實 ^施例中，第二半導體層44係為一 p型摻雜層。如圖^ 所示，步驟S04係移除部分的第二半導體層44，以於 其一出光面441形成複數個階級凸塊c〇1。 〃承上所述，於移除部分的第二半導體層44之步驟 係以灰階曝光（Gray ievel )的方式並搭配蝕刻製程。 詳而言之，請參照圖7同時搭配圖8A至圖8C所示， 步驟S04係更包括步驟S041至步驟S043。 ^如圖8A所示，步驟S041係形成一光阻層pR1於 第二半導體層44上。於本實施例+，光阻層pRi係可 為正光阻係數之光阻層，當然亦可為負光阻係數之光阻 _ 士圖8B所示，步驟S042係透過一光罩以…對光 =層PR1進行曝光。於本實施例中，曝光的步驟係為灰 P白曝光，換言之，其係可經由複數道曝光的程序以對光 =PR1這成不同程度的曝光效果，或係於光罩Μ" 场成灰階圖案，以對光阻層pR1造成不同程度的曝光 效果。 如圖8C所示’步驟S043係依據曝光結果以移除光 阻層PR1及部分的第二半導體層44，以於第二半導體 層4 4之出光面4 4 ^形成階級凸塊c 〇 ί。於本實施例中， 200832747 ==部分的第二半導體層44之移除動作，係 "/ 、式移除。其係選用對第二半導體層44及 ί = Ϊ二:的蝕刻率相當的蝕刻液’以將灰階曝光的結 轉；弟二半導體層44上，以形成階級凸塊c〇1。 [第二實施例] 一以下’明翏照圖9並同時搭配圖10A至圖i〇G所 不，：Λ為依據本發明第二實施例之一種發光二極體裝 置的製造方法之流程圖，而圖10Α至圖10G為盘圖7 配合配合之發光二極體裝置的示意圖。本發明第二實施 例之I光一極體裝置5的製造方法係包括步驟s 11至步 驟 S17。 如圖10A所示，步驟S11係形成一第一半導體層 、；原始基板5 0上，於本實施例中，原始基板5 〇 係為猫日日成長用之基板。如圖1 〇B所示，步驟s 12 係形成一發光層53於第一半導體層52上。如圖i〇c所 不’步驟S13係形成一第二半導體層54於發光層53 上。如圖10D所示，步驟s 14係將一導熱基板5 1與第 二半導體層54結合。如圖10E所示，步驟S15係移除 原始基板50，於本實施例中，原始基板5〇係可以雷射 剝除（laser iift_off)製程完成。如圖1〇F所示，步驟 S16係翻轉發光二極體裝置5。如圖1〇G所示，步驟Sl7 係移除部分之第一半導體層52，並於第一半導體層52 之一出光面521形成複數個階級凸塊C11。 12 200832747 盥# j t者，移除部分的第一半導體層52之步驟係 貝細*例中，移除部分的第二半導體層54之步驟 同的詳細程序，其差異僅是將第二半導體層44 置換為弟-半導體層52,故於此不再多加贅述。 :^另卜值彳于一提的是，於上述第一實施例及第二實 之發光二極體裝置的製造方法中，於導熱基板及第 體層或第二半導體層之間，為了加強光束利用效 _率或疋鍵結能力，其係可再形成或設置反射層、絕緣層 及/或黏著層，然由於其設置或形成順序依據實際的設 计不：’有多種的順序變化，故於此未多加贅述。 ，丁上所述’因依據本發明之—種發光二極體裝置及 其製造方法’係於發光二極體裝置之出光面的半導體層 —上形成階級凸塊’而階級凸塊係可為二元光學凸塊 此可藉由階級凸塊將發光層所射出之光束的光場步 狀^周整為所需要的三角形、四邊形或其他形狀，並且 可调整各階級凸塊的設計，以達到使光束的光場強 勾分佈的目的。又再者，除了階級凸塊的設計之外： 可於發光路徑上另外設置—適當之透鏡（iens)， 將透鏡設置於階級凸塊與光束照射之目的物之間，#、 調整光束之光學特性，而使得應用更為廣泛。糟以 以上所述僅為舉例性，而非為限制性者。 離本發明之精神與㈣，而對其進行之等效修改或= 更’均應包含於後附之申請專利範圍中。 交 13 200832747 【圖式簡單說明】 圖1A為習知的發光二極體裝置之示意圖。 圖1B為習知的另一種發光二極體裝置之示咅圖。 圖1C為習知的發光二極體所造成的光場形狀之示 意圖。 /、 圖2A為依據本發明較佳實施例之一種發光二 · 裝置之示意圖。 —紅 ^ 圖2B至圖2D為圖2A中虛線圓部分之各種階 塊之剖面示意圖。 · 圖3A與圖3B為依據本發明較佳實施例之發光二 極體所造成的光場形狀之示意圖。 圖4為依據本發明較佳實施例之一種發光二極體 裝置之另一示意圖。 圖5為依據本發明第一實施例之一種發光二極體 裝置的製造方法之流程圖。 — 圖6A至圖6D為與圖5配合之發光二極體裝置的 _ 示意圖。 圖7為圖5中步驟s〇4的詳細步驟流程。 圖8A至圖8C為與圖7配合之發光二極體裝置的 示意圖。 圖9為依據本發明第二實施例之一種發光二極體 裝置的製造方法之流程圖。 圖10 A至圖10G為與圖7配合配合之發光二極體 裝置的示意圖。 14 200832747 元件符號說明： 1、2、3、4、5 :發光二極體裝置 21 :透鏡 46 :黏著層 211 :凹部 47 :反射層 22 :發光二極體元件 50 :原始基板 41、51 :導熱基板 A 01 ·重豐區域 42、52 :第一半導體層 C01、C11 ·· ρ身級凸塊 43、53 :發光層 MA1 :光罩 44、54 :第二半導體層 OS1、OS2 :光轴 441 :出光面 4 5 :絕緣層 PR1 :光阻層 15In the case of the Tuenbei application, it is in the form of all the class bumps (10) of the first semiconductor layer 44 of the light-emitting diode device 4. The brothers - 9 200832747 are arranged without overlapping each other, and the meaning of ± ^ and Dan plus its first % intensity uniform distribution will provide a uniform surface source. - Person, month refers to Figure 4, which is a schematic diagram of the light-pole body I according to a preferred embodiment of the present invention. In this embodiment, an insulating barrier is disposed between the guide horse, the soil plate 41 and the first semiconductor layer 42 in an orderly manner: an adhesive layer 46 and a reflective layer 47 to enhance the use of the light beam and the bonding b. force. Wherein, the material of the reflective layer is selected from the group consisting of platinum, gold, silver, bar, nickel, chromium, titanium, and combinations thereof, and the insulating layer is: the shell is made of aluminum nitride or tantalum carbide, and adheres. The material of the layer is selected from the group consisting of tin I, tin silver paste, silver paste, and combinations thereof. a worth mentioning is the insulating layer 45, the adhesive layer 46 and the reflective layer 47. The order of re-arrangement is also not limited to the above-described order, which may be interchanged according to the difference in efficacy design, or only at least one of them may exist. For each of the above-described light-emitting diode devices 4, a method of manufacturing the light-emitting diode device 4 will be described below using a first palladium example and a first embodiment. • [Brief of the case] Ming R?, FIG. 5 and FIG. 6A to FIG. 6D simultaneously, FIG. 5 is a flow chart of a method for manufacturing a light-emitting diode device according to the first embodiment of the present invention. 6A to 6D are schematic views of the light emitting diode device in combination with FIG. 5. The manufacturing method of the #2 photodiode device 4 of the first embodiment of the present invention includes the steps s〇1 to s〇4. As shown in FIG. 6A, the step s1 is to form a first semiconductor layer 42200832747 on a thermally conductive substrate 41. In this embodiment, the first semiconductor layer is an n-type doped layer. As shown in Fig. 6B, step s2 forms a light-emitting layer 43 on the first semiconductor layer 42. As shown in FIG. 6C, a step S03 is performed to form a second semiconductor layer 44 on the light-emitting layer 43. In the embodiment, the second semiconductor layer 44 is a p-type doped layer. As shown in FIG. 2, step S04 removes a portion of the second semiconductor layer 44 to form a plurality of class bumps c 〇 1 on a light exit surface 441 thereof. As described above, the step of removing the portion of the second semiconductor layer 44 is in the form of a gray scale exposure (Gray ievel) in conjunction with an etching process. In detail, referring to FIG. 7 and FIG. 8A to FIG. 8C, step S04 further includes steps S041 to S043. As shown in Fig. 8A, step S041 forms a photoresist layer pR1 on the second semiconductor layer 44. In this embodiment, the photoresist layer pRi can be a photoresist layer having a positive photoresist coefficient, and of course, a photoresist having a negative photoresist coefficient can be shown in FIG. 8B, and step S042 is transmitted through a mask to = layer PR1 is exposed. In this embodiment, the step of exposing is gray P white exposure, in other words, it can be exposed to different degrees of light to PR1 through a plurality of exposure processes, or to the reticle quot" The step pattern causes different degrees of exposure to the photoresist layer pR1. As shown in Fig. 8C, the step S043 is based on the exposure result to remove the photoresist layer PR1 and a portion of the second semiconductor layer 44, so that the light-emitting surface 4 4 of the second semiconductor layer 4 4 forms a class bump c 〇 . In this embodiment, the removal operation of the second semiconductor layer 44 of the portion of 200832747 == is removed by "/. It is an etching solution corresponding to the etching rate of the second semiconductor layer 44 and the second semiconductor layer 44 to carry out the gradation of the gray scale exposure; the second semiconductor layer 44 is formed to form the class bump c〇1. [Second Embodiment] A flow chart of a method for manufacturing a light-emitting diode device according to a second embodiment of the present invention is shown in FIG. 9 and FIG. 10A to FIG. FIG. 10A to FIG. 10G are schematic diagrams of the light-emitting diode device in cooperation with the disk diagram 7. The manufacturing method of the I photo-polar device 5 of the second embodiment of the present invention includes the steps s 11 to S17. As shown in Fig. 10A, step S11 forms a first semiconductor layer, and the original substrate 50. In the present embodiment, the original substrate 5 is used as a substrate for day-to-day growth of cats. As shown in FIG. 1B, step s 12 forms a light-emitting layer 53 on the first semiconductor layer 52. A step S13 forms a second semiconductor layer 54 on the light-emitting layer 53 as shown in FIG. As shown in Fig. 10D, step s 14 combines a thermally conductive substrate 51 and a second semiconductor layer 54. As shown in Fig. 10E, step S15 removes the original substrate 50. In the present embodiment, the original substrate 5 can be completed by a laser iift_off process. As shown in Fig. 1F, step S16 is to invert the light-emitting diode device 5. As shown in FIG. 1A, step S17 removes a portion of the first semiconductor layer 52, and forms a plurality of class bumps C11 on one of the light-emitting surfaces 521 of the first semiconductor layer 52. 12 200832747 盥#jt, the step of removing a portion of the first semiconductor layer 52 is the same as the detailed procedure of removing the portion of the second semiconductor layer 54 except that the second semiconductor layer is different. 44 is replaced by the younger-semiconductor layer 52, so no further details are provided here. In addition, in the manufacturing method of the first embodiment and the second embodiment of the light-emitting diode device, between the heat-conductive substrate and the first layer or the second semiconductor layer, in order to strengthen the light beam The effect layer or the 疋 bond ability can be re-formed or provided with a reflective layer, an insulating layer and/or an adhesive layer, but since the setting or the order of formation is not according to the actual design: 'there are various order changes, so This is not repeated here. The above-mentioned 'light-emitting diode device according to the present invention and its manufacturing method' are formed on the semiconductor layer of the light-emitting surface of the light-emitting diode device to form a class bump, and the class bump system can be Binary optical bumps, by means of class bumps, the light field of the light beam emitted by the light-emitting layer can be stepped into a desired triangle, quadrilateral or other shape, and the design of each class of bumps can be adjusted to achieve The purpose of making the light field of the beam strong. Furthermore, in addition to the design of the class bumps: an appropriate lens (iens) can be additionally disposed on the light-emitting path, and the lens is disposed between the class bump and the object irradiated by the light beam, #, adjusting the optical light of the beam Features make the application more extensive. The above is merely illustrative and not limiting. The spirit of the present invention and (4), and equivalent modifications or = more are to be included in the scope of the appended claims.交13 200832747 [Simple Description of the Drawings] Fig. 1A is a schematic view of a conventional light emitting diode device. FIG. 1B is a schematic diagram of another conventional light emitting diode device. Fig. 1C is a schematic illustration of the shape of a light field caused by a conventional light-emitting diode. 2A is a schematic diagram of a light-emitting device according to a preferred embodiment of the present invention. —Red ^ Fig. 2B to Fig. 2D are schematic cross-sectional views showing various steps of the dotted circle portion of Fig. 2A. 3A and 3B are schematic diagrams showing the shape of a light field caused by a light-emitting diode according to a preferred embodiment of the present invention. 4 is another schematic view of a light emitting diode device in accordance with a preferred embodiment of the present invention. Fig. 5 is a flow chart showing a method of manufacturing a light-emitting diode device in accordance with a first embodiment of the present invention. - Figures 6A to 6D are schematic views of the light-emitting diode device in conjunction with Figure 5. FIG. 7 is a detailed flow chart of the steps s〇4 in FIG. 5. 8A to 8C are schematic views of a light emitting diode device in cooperation with Fig. 7. Figure 9 is a flow chart showing a method of fabricating a light emitting diode device in accordance with a second embodiment of the present invention. 10A to 10G are schematic views of a light emitting diode device in cooperation with Fig. 7. 14 200832747 Description of component symbols: 1, 2, 3, 4, 5: LED device 21: lens 46: adhesive layer 211: recess 47: reflective layer 22: light-emitting diode element 50: original substrate 41, 51: Thermally conductive substrate A 01 · Heavy-duty regions 42, 52: First semiconductor layers C01, C11 · ρ body bumps 43, 53: Light-emitting layer MA1: Photomasks 44, 54: Second semiconductor layers OS1, OS2: Optical axis 441: light-emitting surface 4 5 : insulating layer PR1 : photoresist layer 15