200839882 九、發明說明： 【發明所屬之技術領域】 技術領域 本發明係有關於一種於製造平面顯示器之驅動元件薄 5 膜電晶體（Thin Film Transistor ; TFT )時適用之用以使非 晶石夕薄膜結晶化之熱處理系統。更詳而言之，其係有關於 一種於結晶化熱處理後，可加速基板之冷卻速度，以提高 •平面顯示器之生產性之非晶矽薄膜之結晶化熱處理系統。 【先前技術】 1〇 背景技術 TFT大體分為非晶矽TFT與多晶矽TFT。TFT之特性係 以電子移動率之值評價。由於非晶矽TFT之電子移動率約為 lcm2/Vs，多晶矽TFT之電子移動率約為i〇〇cm2/Vs左右，故 為製造咼性能平面顯示器，宜採用多晶石夕。多晶石夕TFT —15係使非晶矽蒸鍍於玻璃或石英等透明基板，使其多結晶化 φ 後，形成閘極氧化膜及閘極電極，將摻雜劑注入至源極及 汲極後，形成絕緣層而製成。 製造多晶矽TFT時，主要之點係使非晶矽之薄膜多結 晶化之步驟。特別是以降低結晶化溫度為佳。若結晶化溫 20度非常高，製造TFT時，便無法使用熔融點低之玻璃基板， 而有TFT之製造成本大巾§上升之問題點。考慮使用此種玻璃 基板之可能性，最近提出如下述可在低溫且快速地形成多 結晶薄膜之多種步驟。 § 中金屬誘發結晶（Metal Induced Crystallization ; 5 200839882 MIC )法或金屬誘發側向結晶（Metal Induced Lateral200839882 IX. OBJECTS OF THE INVENTION: TECHNICAL FIELD The present invention relates to a thin film transistor (TFT) for manufacturing a planar display device for use in a thin film transistor (TFT) Heat treatment system for film crystallization. More specifically, it relates to a crystallization heat treatment system for an amorphous tantalum film which can accelerate the cooling rate of the substrate after the crystallization heat treatment to improve the productivity of the flat panel display. [Prior Art] 1. BACKGROUND TFTs are roughly classified into amorphous germanium TFTs and polycrystalline germanium TFTs. The characteristics of the TFT are evaluated by the value of the electron mobility. Since the electron mobility of the amorphous germanium TFT is about lcm2/Vs, the electron mobility of the polycrystalline germanium TFT is about i〇〇cm2/Vs. Therefore, in order to manufacture a germanium performance flat display, polycrystalline spine is preferably used. The polycrystalline quartz TFT-15 is obtained by vapor-depositing amorphous iridium on a transparent substrate such as glass or quartz to form a gate oxide film and a gate electrode, and implanting a dopant into the source and the ruthenium. After the pole, an insulating layer is formed. When a polycrystalline germanium TFT is fabricated, the main point is a step of multi-crystallizing the amorphous germanium film. In particular, it is preferred to lower the crystallization temperature. When the crystallization temperature is extremely high at 20 degrees, when a TFT is manufactured, a glass substrate having a low melting point cannot be used, and there is a problem that the manufacturing cost of the TFT is increased. In view of the possibility of using such a glass substrate, various steps which can form a polycrystalline film at a low temperature and rapidly as described below have recently been proposed. § Metal Induced Crystallization ( 5 200839882 MIC ) or Metal Induced Lateral
Crystallization ; MILC )法係使用 Ni、Cu、A1 等金屬觸媒， 誘發非晶矽之結晶化之方法，由於具有可在低溫結晶化之 優點，故在LCD等大量使用。 5 MIC法或MILC法大體分為塗布金屬觸媒之步驟及將 已塗布金屬觸媒之非晶矽結晶化熱處理之步驟。此2種步驟 之間在步驟時間上具差異，一般熱處理所需之時間較大。 特別是MIC法或MILC法基本上具有金屬污染造成之漏電 ML之問題點’需儘量使金屬觸媒之塗布量小。因此，步驟 10 時間更縮短。此2種步驟之步驟時間之差異從生產性之觀點 而言，導致不好之結果。即，由於因結晶化熱處理步驟相 對之長步驟時間，製造全體LCD所需之時間增加，故有處 理量（throughput)降低之問題。 【發明内容】 15 發明揭示 為解決前述習知問題點而發明之本發明之目的在於提 供可加速結晶化熱處理後基板之冷卻速度，以提高平面顯 示器之生產性之用以使非晶矽薄膜結晶化之熱處理系統。 為達成前述目的，本發明之用以使非晶石夕結晶化之熱 20 處理系統係將於表面形成有非晶矽之基板熱處理，以製造 多晶石夕者，其包含有收納前述基板之基板收納部、將前述 基板熱處理之基板熱處理部及以較前述基板熱處理部之最 大冷卻速度快之速度使前述基板冷卻之基板冷卻部。 前述基板宜為如玻璃、石英之透明基板。 200839882 前述基板宜為2個以上。 二前述基板m設於基板支撐用基板夾持具上之狀態 於前述基板熱處理部裝載或卸載。 又’宜以前述基板熱處理部之熱處理溫度為40(TC至 5 75〇C ’熱處理時間為5分至1〇小時；熱處理環境氣體以Ar、 Ne、He、N2之情性氣體環境氣體，〇2、沁0、HA、臭氧 之氧化性氣體環境氣體及H2、NH3之還原性氣體環境氣體 φ 中至少1者來控制。 前述基板冷卻部宜具有用以支撐基板支撐用基板夾持 10具之基板托盤’於前述基板托盤設置貫穿形成於前述基板 夾持具之孔並支樓前述基板之銷。 宜於構成前述基板冷卻部之基本框架内部流入冷卻 水。 前述基板冷卻部宜具有冷卻風扇單元。 15 在前述基板冷卻部，前述基板宜以與基板支撐用基板 • 夾持具分離之狀態冷卻。 前述冷卻風扇單元宜包含具有去除空氣中所含之粒子 之功能的過濾器。 本發明之用以使非晶矽結晶化之熱處理系統具可加速 20結晶化熱處理後基板之冷卻速度，以提高平面顯示為之生 產性之效果。 【實施方式】 用以實施發明之最佳形態 以下，參照所附圖式，就本發明之實施形態作說明 7 200839882 第1圖係顯示本發明非晶矽結晶化系統之全體結構之 圖式。本發明之非晶石夕結晶化系統由基板熱處理部20、基 板冷卻部30及基板收納部40構成。 基板熱處理部20係將形成有非晶矽之基板熱處理，以 5 使非晶石夕結晶化之部份，相當於具有加熱器（圖中未示） 之熱處理爐（furnace )。 基板宜為諸如玻璃、石英之透明基板，本發明未必以 鲁 此為限。舉例言之，當用於半導體元件製程時，基板可為 如矽晶圓等之半導體晶圓。 10 以MIC法或MILC法製造多晶矽時，以基板熱處理部將 已塗布金屬觸媒之非晶矽熱處理。以固相反應法製造多晶 石夕時，將純非晶矽熱處理。本發明之系統於以MIC法、MILC 法、固相反應法等製造多晶矽時皆可適用。惟，以下以MIC 法或MIL法為例來說明。 15 基板熱處理部20構造成符合以MIC法或MILC法製造 • 多晶矽時之熱處理條件。因此，基板熱處理部20構造成可 適當地調節熱處理溫度、熱處理時間及熱處理環境氣體 等。因而，宜將基板熱處理部2〇構造成以熱處理溫度為 400C至750。(：；熱處理時間為5分至10小時；熱處理環境氣 2〇體以八卜犯”卜乂之惰性氣體環境氣體…广沁…！^、 臭氧之氧化性氣體環境氣體及Η2、ΝΑ之還原性氣體環境 氣體中至少1者來控制。 在本發明中，基板熱處理部20可為同時處理複數基板 之批次式’本發明未必限於此，亦可以一次處理1個基板之 200839882 單晶圓式構成。批次式具有生產性明顯較單晶圓式高之優 點，但需具有將可將複數基板適當地移送裳載至基板熱處 料2()之基板移送機構（圖中未示）及基板裝載機構（圖 中未示）。 5 複數基板以裝設於基板夾持具之狀態裝入基板熱處理 部20，以進行熱處理。將基板裝設於基板支撐用基板夾持 具後裝入之理由係於熱處理過程中防止基板之變形之故。 • 纟於因LCD等平面顯示器之大面積化，基板面積亦增大， 故若不將基板適當地以基板夾持具支撐，則在熱處理過程 1〇中產生基板彎曲等現象。因而，以將基板以基板夾持具支 撐之狀態進行熱處理為佳，以將基板全面以基板夾持具完 全支攆之狀態進行熱處理為更佳。基板及基板夾持具參照 第3圖，更詳細說明。 基板冷卻部30係將在基板熱處理部2〇熱處理過程結束 且开5成了多晶矽之基板冷卻之部份，相當於本發明之特徵 _ 結樽。 $ 習知使用之方式係當非晶矽之結晶化結束時，以遮斷 熱器電源之狀悲’將基板逕自放置於基板熱處理部内， 使基板冷卻，或從基板熱處理部取出基板，放置於大氣中， 2〇使其冷卻。然而，如前述，此種基板冷卻方式由於糕費許 多冷卻時間，故有生產性全盤降低之問題點。換言之，在 基板熱處理部熱處理結束後，在切斷電源之狀態下，即使 以最大之冷卻速度使基板冷卻，冷卻速度仍有界限。本發 明係為解決此問題點而發明者，本發明之系統特徵在於除 9 200839882 了基板熱處理部20外，另具有基板冷卻部3〇，可較習知方 式加速基板之冷卻速度。 第3圖係顯示基板冷卻部3〇全體結構之爾式。 基板冷卻部30為基本上以基底框架31構成之構造體。 5於框架31之内部流入冷卻水，以將基板迅速冷卻（圖中未 示）。於框架31上裝設冷卻風扇32。即，本發明之基板冷卻 部30採用組合水冷式與空冷式，將基板冷卻之方式。 形成有多晶石夕之基板37於熱處理結束後，從基板處理 部20移送至基板冷卻部30，而載置於基板冷卻部3〇之框架 10 31上。載置於框架31上之基板37以流經框架31内部之冷卻 水及伙冷卻風扇放出之冷空氣予以冷卻，而於短時間内（例 如10分鐘以内）到達常溫。在本發明中，由於使用組合水 冷式及空冷式之方式’故可提高基板之冷卻效率。 冷卻風扇32宜使用FFU (風扇過濾單元；Fan Filter 15 Unit)。一般FFU藉設置於無塵室之天花板等，於下方形成 層流（laminar flow)，而具製造之無塵式環境之作用。此時， FFU經由過滤器過濾空氣中所含之粒子，以風扇出吹出空 氣。因而’ FFU可將冷空氣吹入至基板，且可防止因基板 之粒子造成之污染。經由FFU將冷空氣吹入至基板時，為 2〇 使冷空氣順利地通過複數基板37間，而於水平方向將空氣 吹入基板時，也以將FFU配設於基板側面為佳。 在本發明中，複數基板37以裝設於基板冷卻部3〇之基 板33之狀態直接冷卻，特別是基板37以從基板夾持具36分 離之狀態冷卻。 10 200839882 第3圖係顯示在基板冷卻部3〇之基板托盤33中，基板冷 卻時之基板狀態者。基板托盤33由基板夾持具支撐台34及 銷35構成。 熱處理後，從基板熱處理部3〇將基板移送至基板冷卻 — 5 部30冷卻之過程如下。 首先，在基板熱處理部3〇當熱處理結束時，關閉基板 熱處理部20之電源後，以基板熱處理部2〇使基板37自然冷 φ 卻至預定之溫度（較一般之熱處理溫度低loot：至200°C之 溫度）。此係為防止當使基板37急速冷卻時，基板因熱撞擊 10等產生破損或彎曲之現象之故。之後，利用使晶舟升降之 晶舟升降機（圖中未示），使裝設有複數基板37之晶舟（圖 中未示）下降，將基板37卸載至基板熱處理部3〇外部。此 時，基板37裝設於基板夾持具36上。結果，基板37以裝置 於基板夾持具36之狀態從基板熱處理部2〇卸載。參照第！ 15圖，從基板熱處理部20卸載之基板37位於基板熱處理部20 φ 之正下方空間。將複數基板裝設於晶舟，將此經由晶舟升 降機於基板熱處理部裝載及卸載之結構為眾所皆知之技. 術，故省略關於此之詳細說明。 接著’基板37以裝設於基板夾持具36之狀態直接從晶 20舟（圖中未示）移送至基板冷卻部30之基板托盤33。移送 機構利用諸如基板移送機器人之機構（圖中未示）。於基板 夾持具36形成基板托盤33之銷35可貫穿之孔。基板移送機 器人將裝設有基板37之基板夾持具36舉起至基板托盤33， 將基板夾持具36載置於基板夾持具支撐台34上。在此過程 11 200839882 中，基板托盤33之銷35貫穿基板夾持具36之孔，基板37位 於銷35上。藉此，呈基板37與基板夾持具36完全分離之狀 態。 1個基板37對應6個（即，長方形基板長邊兩側各3個） 5銷35，以儘可能支撐基板37之最小限面積為佳，本發明未 必以此為限。 如此，基板37從基板夾持具36分離，同時，以最小限 度面積為銷所支撐，故基板37之大部份面積露出。因而， 可進一步提高基板冷卻部30之基板之冷卻效率。 10 基板收納部40係移送收納在基板冷卻部30結束冷卻之 基板之部份。基板移送機器人舉起銷35上之基板37，將之 移送至基板收納部40收納。 以上以熱處理及之後之過程為中心，說明了本發明之 系統，基板冷卻部30及基板收納部40亦可在將複數基板裝 15載於基板熱處理部20，以進行熱處理之過程中使用。舉例 言之，基板冷卻部30係作為為將複數基板37熱處理而裝入 至基板熱處理部20前，裝設於基板夾持具之部份。惟，由 於此時不需冷卻基板，故不使冷卻風扇32等運作亦可。 為進行熱處理，從基板收納部40經由基板冷卻部30， 20 將基板移送至基板熱處理部20之過程如下。基板移送機器 人將於基板收納部40之基板37舉起，載置於設在基板托盤 33之銷35上（參照第3圖）。之後，基板移送機器人以第3圖 所示之基板之配置狀態，將基板夾持具36抓取後舉起時， 銷35便從基板夾持具36拔出，自然地將基板37裝設於基板 12 200839882 炎持具36。之後，在裝設基板37之狀態下，基板夹持具％ 裝載於基板熱處理部20，進行基板熱處理。基板37以全面 完全緊貼於基板夾持具36之狀態進行熱處理。此與參照第i 圖進行之說明相同。當然在將基板37裝載於基板熱處理部 5 20之過程亦可使用前述之晶舟及晶舟升降機。 本發明用以使非晶矽結晶化之熱處理系統具有結晶化 熱處理後加速基板之冷卻速度，提高平面顯示器之生產性 之效果。因而，本發明之產業利用性可謂極高。 另一方面，在本說明書中，以數個較佳實施形態記述 10本發明，只要為該業者，應了解在不脫離申請專利範圍揭 示之本發明範疇及思想下，可進行多種變形及修正。 【圖式簡單說明】 第1圖係顯示本發明非晶矽結晶化系統之全體結構者。 第2圖係顯示第1圖之非晶矽結晶化系統之基板冷卻部 15 結構者。 弟3圖係顯示第2圖之基板冷卻部之基板冷卻時之基板 狀態者。 【主要元件符號說明】 34…基板夹持具支撐台 35…銷 36…基板夾持具 37…級 40…基板收納部 10· ··非晶石夕結晶化系統 20…基板熱處理部 30…鉍冷卻部 31…基底框架 32…冷卻 33···；!^反托盤 13The Crystallization (MILC) method uses a metal catalyst such as Ni, Cu, or A1 to induce crystallization of amorphous germanium. Since it has the advantage of being crystallizable at a low temperature, it is widely used in LCDs and the like. 5 The MIC method or the MILC method is roughly classified into a step of coating a metal catalyst and a step of crystallization heat treatment of an amorphous germanium to which a metal catalyst has been applied. There is a difference in the step time between the two steps, and the time required for the general heat treatment is large. In particular, the MIC method or the MILC method basically has the problem of leakage of electricity ML caused by metal contamination, which is required to make the coating amount of the metal catalyst as small as possible. Therefore, step 10 is shorter. The difference in the steps of the two steps leads to a bad result from the viewpoint of productivity. That is, since the time required to manufacture the entire LCD increases due to the relatively long step time of the crystallization heat treatment step, there is a problem that the throughput is lowered. SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problems. The object of the present invention is to provide an amorphous ruthenium film which can accelerate the cooling rate of a substrate after crystallization heat treatment to improve the productivity of a flat panel display. Heat treatment system. In order to achieve the above object, the heat 20 treatment system for crystallizing amorphous austenite according to the present invention heats a substrate on which an amorphous germanium is formed on the surface to produce a polycrystalline stone, which comprises a substrate for housing the substrate. a substrate housing portion, a substrate heat treatment portion that heats the substrate, and a substrate cooling portion that cools the substrate at a speed faster than a maximum cooling rate of the substrate heat treatment portion. The substrate is preferably a transparent substrate such as glass or quartz. 200839882 The number of the above substrates is preferably two or more. The substrate m is placed on the substrate supporting substrate holder in a state where the substrate heat treatment portion is loaded or unloaded. Further, it is preferable that the heat treatment temperature of the heat treatment portion of the substrate is 40 (TC to 5 75 〇C 'heat treatment time is 5 minutes to 1 hour; heat treatment atmosphere gas is Ar, Ne, He, N2 atmosphere gas, 〇 2. At least one of 沁0, HA, ozone oxidizing gas ambient gas, and H2, NH3 reducing gas ambient gas φ is controlled. The substrate cooling unit preferably has a substrate supporting substrate for holding 10 substrates. The substrate tray ′ is provided with a pin formed in the substrate holder through a hole formed in the substrate holder and supporting the substrate. Preferably, the cooling water is poured into the basic frame constituting the substrate cooling unit. The substrate cooling unit preferably has a cooling fan unit. In the substrate cooling unit, the substrate is preferably cooled in a state of being separated from the substrate supporting substrate and the holder. The cooling fan unit preferably includes a filter having a function of removing particles contained in the air. The heat treatment system for crystallizing the amorphous crucible can accelerate the cooling rate of the substrate after the 20 crystallization heat treatment, so as to improve the productivity of the flat display. [Embodiment] BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, an embodiment of the present invention will be described with reference to the accompanying drawings. 7 200839882 FIG. 1 is a view showing the overall structure of an amorphous germanium crystallization system of the present invention. The amorphous crystallization system of the present invention comprises a substrate heat treatment unit 20, a substrate cooling unit 30, and a substrate housing unit 40. The substrate heat treatment unit 20 heat-treats the substrate on which the amorphous germanium is formed, and the amorphous stone is 5 The crystallization portion corresponds to a heat treatment furnace having a heater (not shown). The substrate is preferably a transparent substrate such as glass or quartz, and the present invention is not necessarily limited thereto. For example, when For the semiconductor device process, the substrate may be a semiconductor wafer such as a germanium wafer. 10 When the polysilicon is produced by the MIC method or the MILC method, the amorphous germanium coated with the metal catalyst is heat-treated by the substrate heat treatment portion. When the polycrystalline spine is produced by the reaction method, the pure amorphous germanium is heat-treated. The system of the present invention can be applied to the production of polycrystalline germanium by the MIC method, the MILC method, the solid phase reaction method, etc. However, the following MIC method is applicable. The MIL method is exemplified. The substrate heat treatment portion 20 is configured to conform to the heat treatment conditions when the polycrystalline silicon is manufactured by the MIC method or the MILC method. Therefore, the substrate heat treatment portion 20 is configured to appropriately adjust the heat treatment temperature, the heat treatment time, and the heat treatment atmosphere. Therefore, it is preferable to configure the substrate heat treatment portion 2〇 to have a heat treatment temperature of 400 C to 750. (:; heat treatment time is 5 minutes to 10 hours; heat treatment environment gas 2 〇 body is 八 犯 ” ” ” ” 乂 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性 惰性The gas is controlled by at least one of the oxidizing gas ambient gas of ozone and the reducing gas ambient gas of Η2, ΝΑ. In the present invention, the substrate heat treatment section 20 may be a batch that simultaneously processes a plurality of substrates. The present invention is not necessarily limited to this, and it is also possible to process the 200839882 single wafer type of one substrate at a time. The batch type has the advantage of being significantly more productive than the single wafer type, but it needs to have a substrate transfer mechanism (not shown) that can transfer the plurality of substrates to the substrate heat material 2 () and the substrate loading. Institution (not shown). The plurality of substrates are placed in the substrate heat treatment portion 20 in a state of being mounted on the substrate holder to perform heat treatment. The reason why the substrate is mounted on the substrate supporting substrate holder is to prevent deformation of the substrate during the heat treatment. • In the case of a large area of a flat panel display such as an LCD, the area of the substrate is also increased. Therefore, if the substrate is not properly supported by the substrate holder, the substrate is bent during the heat treatment process. Therefore, it is preferable to heat-treat the substrate in a state in which the substrate holder is supported, and it is more preferable to heat-treat the substrate in a state in which the substrate holder is completely supported. The substrate and substrate holder are described in more detail with reference to Fig. 3. The substrate cooling portion 30 corresponds to a portion where the heat treatment process of the substrate heat treatment portion 2 is completed and the substrate 5 is turned into a polycrystalline crucible, which corresponds to the feature of the present invention. In the conventional method, when the crystallization of the amorphous enamel is completed, the substrate diameter is self-placed in the heat treatment portion of the substrate, and the substrate is cooled or the substrate is taken out from the substrate heat treatment portion. In the atmosphere, 2 〇 let it cool. However, as described above, since the substrate cooling method has a lot of cooling time due to the cake cost, there is a problem that the productivity is reduced. In other words, after the heat treatment of the substrate heat treatment portion is completed, the substrate is cooled at the maximum cooling rate in a state where the power source is turned off, and the cooling rate is still limited. The present invention has been made in order to solve the problem. The system of the present invention is characterized in that, in addition to the substrate heat treatment portion 20 of 9 200839882, the substrate cooling portion 3 is further provided, and the cooling rate of the substrate can be accelerated by a conventional method. Fig. 3 is a view showing the overall structure of the substrate cooling unit 3〇. The substrate cooling portion 30 is a structure mainly composed of the base frame 31. 5 The cooling water is poured into the inside of the frame 31 to rapidly cool the substrate (not shown). A cooling fan 32 is mounted on the frame 31. That is, the substrate cooling unit 30 of the present invention employs a combination of a water-cooled type and an air-cooled type to cool the substrate. After the heat treatment is completed, the substrate 37 on which the polycrystalline stone is formed is transferred from the substrate processing unit 20 to the substrate cooling unit 30, and placed on the frame 10 31 of the substrate cooling unit 3〇. The substrate 37 placed on the frame 31 is cooled by the cooling water flowing through the inside of the frame 31 and the cool air discharged from the cooling fan, and reaches a normal temperature in a short time (for example, within 10 minutes). In the present invention, since the combination of the water-cooling type and the air-cooling type is employed, the cooling efficiency of the substrate can be improved. The cooling fan 32 should preferably use an FFU (Fan Filter Unit; Fan Filter 15 Unit). In general, the FFU is formed in a ceiling of a clean room to form a laminar flow underneath, and has a function as a dust-free environment. At this time, the FFU filters the particles contained in the air through the filter, and blows out the air by the fan. Thus, the 'FFU can blow cold air into the substrate and prevent contamination by particles of the substrate. When the cold air is blown into the substrate via the FFU, it is preferable that the cold air is smoothly passed between the plurality of substrates 37, and when the air is blown into the substrate in the horizontal direction, it is preferable to arrange the FFU on the side surface of the substrate. In the present invention, the plurality of substrates 37 are directly cooled in a state of being mounted on the substrate 33 of the substrate cooling portion 3, and in particular, the substrate 37 is cooled in a state of being separated from the substrate holder 36. 10 200839882 Fig. 3 shows the state of the substrate in the substrate tray 33 of the substrate cooling unit 3 when the substrate is cooled. The substrate tray 33 is composed of a substrate holder support table 34 and a pin 35. After the heat treatment, the substrate is transferred from the substrate heat treatment portion 3 to the substrate cooling - the cooling process of the 5 portions 30 is as follows. First, in the substrate heat treatment portion 3, when the heat treatment is completed, the power of the substrate heat treatment portion 20 is turned off, and the substrate 37 is naturally cooled to a predetermined temperature by the substrate heat treatment portion 2 (compared to the general heat treatment temperature low: to 200) °C temperature). This is to prevent the substrate from being damaged or bent due to thermal shock 10 or the like when the substrate 37 is rapidly cooled. Thereafter, the boat (not shown) on which the plurality of substrates 37 are mounted is lowered by a boat elevator (not shown) for lifting and lowering the boat, and the substrate 37 is unloaded to the outside of the substrate heat treatment portion 3. At this time, the substrate 37 is mounted on the substrate holder 36. As a result, the substrate 37 is unloaded from the substrate heat treatment portion 2 in a state of being mounted on the substrate holder 36. Refer to the first! In Fig. 15, the substrate 37 unloaded from the substrate heat treatment portion 20 is located in a space directly below the substrate heat treatment portion 20φ. The structure in which the plurality of substrates are mounted on the wafer boat and loaded and unloaded by the wafer boat ascending machine in the substrate heat treatment portion is well known, and a detailed description thereof will be omitted. Then, the substrate 37 is directly transferred from the wafer (not shown) to the substrate tray 33 of the substrate cooling unit 30 in a state of being mounted on the substrate holder 36. The transfer mechanism utilizes a mechanism such as a substrate transfer robot (not shown). The substrate holder 36 forms a hole through which the pin 35 of the substrate tray 33 can pass. The substrate transfer robot lifts the substrate holder 36 on which the substrate 37 is mounted to the substrate tray 33, and mounts the substrate holder 36 on the substrate holder support table 34. In this process 11 200839882, the pin 35 of the substrate tray 33 penetrates the hole of the substrate holder 36, and the substrate 37 is placed on the pin 35. Thereby, the substrate 37 and the substrate holder 36 are completely separated. One of the substrates 37 corresponds to six (i.e., three on each side of the long side of the rectangular substrate). The five pins 35 are preferable to support the minimum area of the substrate 37 as much as possible, and the present invention is not limited thereto. Thus, the substrate 37 is separated from the substrate holder 36 and supported by the pin with a minimum area, so that most of the area of the substrate 37 is exposed. Therefore, the cooling efficiency of the substrate of the substrate cooling portion 30 can be further improved. The substrate storage unit 40 transfers and stores the portion of the substrate that has been cooled by the substrate cooling unit 30. The substrate transfer robot lifts the substrate 37 on the pin 35 and transfers it to the substrate housing portion 40 for storage. The system of the present invention has been described above with reference to the heat treatment and the subsequent processes. The substrate cooling unit 30 and the substrate housing portion 40 may be used in the process of heat treatment by mounting the plurality of substrates 15 on the substrate heat treatment unit 20. For example, the substrate cooling portion 30 is provided as a portion of the substrate holder before being heat-treated to the substrate heat treatment portion 20 for heat-treating the plurality of substrates 37. However, since the substrate is not required to be cooled at this time, the cooling fan 32 or the like is not operated. In order to perform heat treatment, the process of transferring the substrate from the substrate housing portion 40 to the substrate heat treatment portion 20 via the substrate cooling portions 30, 20 is as follows. The substrate transfer robot lifts up the substrate 37 of the substrate housing portion 40 and mounts it on the pin 35 provided on the substrate tray 33 (see Fig. 3). Thereafter, when the substrate transfer robot picks up the substrate holder 36 and lifts it up in the arrangement state of the substrate shown in FIG. 3, the pin 35 is pulled out from the substrate holder 36, and the substrate 37 is naturally mounted on the substrate 37. Substrate 12 200839882 Inflammation holder 36. Thereafter, in a state in which the substrate 37 is mounted, the substrate holder % is mounted on the substrate heat treatment portion 20, and the substrate heat treatment is performed. The substrate 37 is heat-treated in a state of being completely in close contact with the substrate holder 36. This is the same as the description made with reference to the i-th figure. Of course, the above-described wafer boat and boat elevator can also be used in the process of loading the substrate 37 on the substrate heat treatment portion 520. The heat treatment system for crystallizing amorphous bismuth of the present invention has the effect of accelerating the cooling rate of the substrate after crystallization heat treatment and improving the productivity of the flat panel display. Therefore, the industrial applicability of the present invention is extremely high. On the other hand, in the present specification, the present invention will be described in a number of preferred embodiments, and it is to be understood that various modifications and changes can be made without departing from the scope and spirit of the invention. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 shows the overall structure of the amorphous germanium crystallization system of the present invention. Fig. 2 is a view showing the structure of the substrate cooling portion 15 of the amorphous germanium crystallization system of Fig. 1. The third diagram shows the state of the substrate when the substrate of the substrate cooling portion of Fig. 2 is cooled. [Description of main component symbols] 34...substrate holder support table 35...pin 36...substrate holder 37...stage 40...substrate storage unit 10··amorphous crystallization system 20...substrate heat treatment unit 30...铋Cooling portion 31...base frame 32...cooling 33···;