200821949 (1) 九、發明說明 【發明所屬之技術領域】 本發明係關於裝設於金屬物之RFIC標籤與其使用方 法。 【先前技術】 近年來，具備利用無線波作動之1C晶片之RFIC( Radio Frequency Integrated Circuit)標籤與讀取器、寫入 器、或讀取/寫入器（以下，統稱爲讀取/寫入器）之間，藉 由無線波實施資料之授受之RF 1C系統逐漸普及。該RF 1C 系統因爲係利用RFIC標籤及讀取/寫入器所分別具備之天 線來實施資料之授受，故RFIC標籤距離讀取/寫入器較遠 亦可進行通信，此外，因爲因爲不易受污垢等之影響的優 點，故被應用於工廠之生產管理、物流之管理、室進出管 理等之各種用途。 具備雙極天線之以UHF頻帶及SHF頻帶作動之RFIC 標籤若直接配置於金屬物上等而接近金屬時，即無法作動 。因此，將前述RFIC標籤裝設於金屬物時，藉由於RFIC 標籤及金屬物之間配置由塑膠或橡膠等所構成之隔離件， 採用於金屬物及天線之間設置一定之距離來抑制金屬之影 響之方法。 然而，若隔離件太薄而使金屬物之表面及天線之間隔 縮小，則RFIC標籤將無法作動，另一方面，若隔離件太 厚而使金屬物及天線之間隔增大，雖然可以增加通信距離 -4- 200821949 (2) ’然而’ RFIC標籤從金屬物之表面突出，於金屬物之處 理中，有因爲周邊之物品及金屬物之接觸而導致RFIC標 籤破損之機會增加之問題。 , 爲了改善上述問題點，日本特開2005 -3 098 1 1號公報（ 參照第2圖、第4圖、第6圖、第7圖）所記載之RFIC標籤， 係於前述雙極天線之金屬物裝設面具備軟磁性材，或者， 於前述雙極天線之金屬物裝設面之從前述金屬物側具備軟 磁性材及隔離件，或者，於前述雙極天線之金屬物裝設面 之從前述金屬物側具備隔離件、軟磁性材、及隔離件。 【發明內容】 然而，日本特開2005-3 098 1 1號所記載之傳統技術之 RFIC標籤，係將1C晶片裝設於雙極天線，並將其裝設於 金屬物者，若通信波長爲λ，則需要半波長（λ /2)之長度 之天線長度，而有RFIC標籤較大之缺點。 有鑑於上述問題，本發明之主要目的在提供，可設置 於金屬物上之比傳統更爲小型之RFIC標籤。 本發明之第1觀點之RFIC標籤，係將利用無線波作 動之1C晶片配載於導電性之薄板或薄膜，其特徵爲，導 電性之薄板或薄膜係以藉由設置於其兩端部側之連結部電 性連結或靜電容的連結著金屬物之方式安設，金屬物構成 1C晶片之天線，導電性之薄板或薄膜於中間部具備用以 使天線之阻抗及1C晶片之阻抗互相匹配之阻抗匹配用電 路，將至少阻抗匹配用電路部份，從金屬物設置特定間隔 -5- 200821949 (3) 來安裝。其次，其特徵爲，傳送或接收之電波之波長爲λ 時，導電性之薄板或薄膜之阻抗匹配用電路部份之長度小 於 λ /2。 依據本發明，因爲金屬物之金屬表面可以發揮1C晶 片之天線之作用，配載著1C晶片之導電性之薄板或薄膜 之阻抗匹配用電路部份之長度即使小於1C晶片之通信波 長；I之1/2，配載著1C晶片之薄板亦可成爲RF 1C標籤而 進行通信。 此外，本發明之第2觀點之RF 1C標籤，係含有具有 利用無線波作動之1C晶片及阻抗匹配用電路之小型天線 而構成之小型閘口之形態之RFIC標籤，其特徵爲，配設 於小型天線之特定端部之連結部利用電性連結，或靜電容 結合而連結著金屬物，金屬物構成前述1C晶片之天線， 小型天線係將至少阻抗匹配用電路部份從金屬物設置特定 間隔而安裝。其次，其特徵爲，傳送或接收之電波之波長 爲λ時，小型天線之阻抗匹配用電路部份之長度小於λ /2 〇 依據本發明，因爲金屬物之金屬表面可以發揮1C晶 片之天線之作用，小型閘口之小型天線之長度即使小於通 信波長Λ之1/2，亦可成爲RFIC標籤而進行通信。本發明 包含RF 1C標籤之使用方法在內。 依據本發明，可以提供可設置於金屬物上之小型之 RFIC標籤。 200821949 (4) 【實施方式】 以下，參照圖面，針對用以實施本發明之實施例之 RFIC標籤進行說明。 <<第1實施形態>> 首先，參照第1圖A、第1圖B、第1圖C、以及第1圖 D，針對本發明之第1實施形態之RF 1C標籤進行說明。第 1圖A係將第1實施形態之RFIC標籤裝設於金屬構件（金 屬物）之狀態之斜視圖，第1圖B係除去1C晶片之狀態之 RFIC標籲之平面圖，第1圖C係第1圖A之X1-X1之箭頭 方向之剖面圖，第1圖D係RFIC標籤之等效電路圖。 RFIC標籤1A係由1C晶片5及矩形之導電性之例如銅 (Cu)、鋁（A1)等之金屬薄板（導電性之薄板）10A所構成。 如第1圖A所示，1C晶片5係配設於金屬薄板10A之長度 方向之中間部之阻抗匹配用電路之部份（以下，稱爲細縫 部）l〇a之大致中央。金屬薄板10A之長度方向之兩端部側 之連結部1 〇c係利用未圖示之導電性接著劑或焊接等之熔 接密貼於金屬構件2，細縫部1 0a之下面係位於金屬構件2 之表面之特定高度h，例如，利用彎曲成大致直角之腳部 10b抬高100 μιη以上。 如第1圖Β所示，細縫部10a係於長度方向之大致中 央部份，從側面側切入大致一半之寬度，此外，具有於長 度方向彎曲成直角，而使全體成爲平面形狀爲L字形狀之 切入之細縫6A。四角框所示之5a、5b之位置，係對應於 200821949 (5) 對1C晶片5之天線供電之端子信號輸出入電極5a、5b，亦 即，以跨越細縫6A之方式，將1C晶片5以例如利用超音 波接合之電性連結配置於金屬薄板1〇Α(參照第1圖C)。 此處，金屬薄板10A之厚度係例如100 μπι。細縫部 l〇a只要可確保從金屬構件2之表面之特定高度之通常強 度即可，只要依據金屬薄板1 〇 A之材質進行適度決定即可 〇 此外，細縫部1 〇a之長度方向之長度L 1係前述L字形 狀之細縫6A之長度方向之長度，例如，於約3 .5 mm(參照 第1圖B)之長度方向之兩側具有足夠1C晶片5之寬度等之 長度，例如，7 m m以上。連結部1 0 c之長度L 2，例如， 約5 mm。如此，全體之長度L2 + L1+L2可以爲約17mm(換 算成波長λ之單位爲；I /7以下）。此處，長度 L1約爲20 mm，全體之長度L2 + L1+L2約爲30 mm，由實驗可知，通 信距離相對較長。 此外，細縫部1 〇a之下面之從金屬構件2之表面之高 度h爲10 0 μπι以上，已確認可進行通信。該高度h之値 愈大，則通信距離會愈大。 同時，前述例示之數値，係1C晶片5之長度方向之寬 度約爲0.5 mm、1C晶片5之通信頻率爲2.45 GHz時。細縫 6A之長度，亦即，細縫部10a之長度L1可依據阻抗匹配 之程度來進行適度設定。此外，連結部1 〇c於利用金屬構 件2之表面之焊接等之電性連結時，長度L2並不具意義， 然而，利用絕緣性之接著劑等之貼附時，因爲係利用靜電 -8- 200821949 (6) 容結合之連結，故長度L2約爲5 mm。 藉由將1C晶片5之信號輸出入電極5a、5b以跨越細 縫6A之方式分別電性連結於細縫部1 0a之金屬薄板，可以 將藉由細縫6A所形成之短柱6a(參照第1圖B)之部份串聯 於天線之細縫部1 〇a及金屬構件2、與1C晶片5之間，而 使短柱6a之部份具有串聯之電感成分之作用。利用該電 感成分，抵消1C晶片5內之電容成分，故可獲得天線及 1C晶片5之阻抗匹配。 亦即，1C晶片5可以利用具有充分面積之金屬構件2 做爲天線，而且，1C晶片5之阻抗、及細縫部10a及金屬 構件2所形成之天線之阻抗可匹配。將含有此種細縫6A之 細縫部1 〇a稱爲阻抗匹配電路。 此外，阻抗匹配係由至細縫6A之L字之角部爲止之 各長度所決定之短柱6a之電感成分來決定。 依據本實施形態，因爲RF 1C標籤1 A之裝設構件之金 屬構件2具有RFIC標籤1A之天線之作用，RFIC標籤1A 之細縫部l〇a之長度方向之長度只要通信波長λ之1/4以下 之長度即可，最小全長也約爲1 7 mm，即使爲了增加通信 距離而爲約30 mm，亦爲波長λ之1/4以下之長度，小型之 RFIC標籤1Α可進行通信。亦即，依據本實施形態，因爲 金屬物之表面可以具有1C晶片5之天線之作用，即使包含 阻抗匹配電路在內之配載著1C晶片5之金屬薄板之長度小 於1C晶片5之通信波長λ之1/2，配載著1C晶片5之金屬 薄板亦可成爲RFIC標籤而進行通信。 200821949 (7) 此外，因爲只要細縫部l〇a之下面及金屬構件2之間 隙確保爲1 0 0 μ m以上而具有阻抗匹配電路之機能即可， 故從金屬構件2之表面突出較小，使用時，不易發生RFIC 標籤1 A被勾住之情形。 此外，應用於本實施形態之RFIC標籤1 A之金屬構件 2爲鋁（A1)、碳鋼、不鏽鋼、銅（Cu)等之導電性金屬。同 時，無關磁性體及非磁性體之差異，亦可採用不鏽鋼。 此外，本實施形態係金屬薄板1 〇a，然而，並未受限 於此。亦可以例如於樹脂板之表面以電鍍、蒸鍍、或濺鍍 等形成導電性金屬之薄膜之導電性之薄板、及由導電性之 樹脂所構成之薄板來取代導電性之金屬薄板。 <<第1實施形態之各種變形例>> 其次，針對第1實施形態之變形例進行說明。針對與 第1實施形態爲相同之構成，附與相同符號並省略重複說 明。 第2圖A係金屬薄板10B之腳部10b之設定角度不同 於RFIC標籤1 A，而爲下方呈斜向延伸而出之腳部10b之 設定角度之裝設形狀之RFIC標籤1B。藉由將金屬薄板 10B之腳部l〇b設定成如第2圖A所示之角度，於金屬薄 板1 0B使用硬質材料時，具有可以防止彎曲加工所導致之 破斷之優點。 第2圖B係金屬薄板10c之腳部10b及連結部10c於細 縫部1 〇a之長度方向端部側之兩方之寬度方向端，從合計 -10- 200821949 (8) 4處朝寬度方向延伸之RFIC標籤1C。藉由此種腳部10b及 連結部1 〇c之配置構成，可以更確實地確保中間部之細縫 部l〇a及金屬構件2之間隔。 第3圖A係相對於金屬薄板10D之腳部10b使連結部 l〇c位於細縫部10a之下方而朝內側彎曲成直角之點而與 RF 1C標籤1 A不同，其餘爲相同。藉由此種裝設形狀，長 度方向可以比第1實施形態更爲小型。此外，以於上面側 形成導電性之金屬膜之薄板取代金屬薄板時，藉由此種連 結部l〇c之形狀，容易與金屬構件2形成電性連結。第3圖 B係與第3圖A之腳部10b之設定角度不同，而爲下方呈 斜向延伸而出之腳部l〇b之設定角度之裝設形狀之RFIC 標籤1E。 第4圖A係於RFIC標籤1 A之細縫部l〇a之下面（裝設 面）配置由絕緣材所構成之隔離構件2 1之裝設於金屬構件2 之RFIC標籤1F。第4圖B係於RFIC標籤1D之細縫部10a 之下方配置由絕緣材所構成之隔離構件2 1之裝設於金屬構 件2之RFIC標籤1G。 隔離構件2 1之材質可以爲，例如，聚對酞酸乙二酯 (PET)、聚丙烯（PP)等之樹月旨薄板，以未圖示之粘著材貼 附於細縫部l〇a之下面。此外，隔離構件21可以使用陶瓷 或使用於半導體之封裝材料之環氧樹脂，以RFIC標籤1F 全體做爲晶片電阻，藉由被稱爲片電容之構件相同形態之 封裝構件，處理更爲容易。 因爲RFIC標籤IF、1G將隔離構件21配置於細縫部 -11 - 200821949 (9) l〇a之下方，具有即使對細縫部10a施加外力，細縫部10a 及金屬構件2之表面等之間隔也不會變化之優點。亦即， 可以防止金屬薄板l〇A、10D彎曲之塑性變形而使通信距 離產生變化。 第5圖A係第2圖B所示之RF 1C標籤1C之變形，係 金屬薄板10F之腳部l〇b及連結部10c於細縫部l〇a之長度 方向端部側之一方之寬度方向端，從合計2處朝寬度方向 延伸之RFIC標籤1H。此時，因爲只以金屬薄板10F之懸 臂狀之強度來確保高度h，故金屬薄板1 0F之板厚應大於 RFIC 標籤 1 A。 RFIC標籤1H時，可以長度方向比RFIC標籤1 A更小 型地裝設於金屬構件2。 第5圖B係RFIC標籤1H之變形，係於細縫部10a之 下方側進一步彎曲形成金屬薄板l〇F之連結部l〇c之RFIC 標籤1 1。此時，因爲只以金屬薄板1 〇G之懸臂狀之強度來 確保高度h，故金屬薄板10G之板厚應大於RFIC標籤1 A 。此外，此時，寬度方向可以比RFIC標籤1C及RFIC標 籤1 Η更小型地裝設於金屬構件2。 第6圖Α係將第5圖Α所示之RFIC標籤1Η之另一變 形之使用平面形狀爲口之字形狀之平板形狀之金屬薄板 10H之RFIC標籤1K，以細縫部l〇a未重疊於金屬構件2之 方式裝設於金屬構件2之狀態圖。 藉由從此種金屬構件2之緣突出細縫部1 0a之方式裝 設RFIC標籤1K，即使金屬構件2彼此互相重疊，亦不會 -12- 200821949 (10) 有1C晶片5被夾於金屬構件2之間，而受到金屬構件2強力 推壓，故可防止1C晶片5破損。 第6圖B係將RFIC標籤1K裝設於印刷電路板等之電 路基板4之狀態圖。第6圖B係於從電路基板4之緣部至內 側之位置配置例如充份大於基部及RFIC標籤1 K之配線圖 案區域（金屬物）4a，並於其周圍配置電路圖案區域4b時， 可將RFIC標籤1K以細縫部10a未重疊於配線圖案區域4a 之方式裝設於電路基板4。 如此，藉由將較小之RFIC標籤1K連結於形成於電路 基板4上之較大配線圖案4a，RFIC標籤1K可以得到充份 之通信距離。 第6圖C係將RFIC標籤1D應用於電路基板4之狀態 圖。 第6圖C時，係將RFIC標籤1D，以細縫部10a從配 線圖案區域4 a浮起之狀態之方式裝設於從電路基板4之緣 部至內側爲止之位置之配線圖案區域4a。此種將RFIC標 籤1 D裝設至電路基板4之方法時，與第6圖B時相比，因 爲細縫部1 〇a之位置亦可位於配線圖案區域4a之位置，故 容易將RFIC標籤1D裝設於電路基板4。 到目前爲止之第1實施形態及前述之各變形例係將1C 晶片5配載於金屬薄板上之RFIC標籤，然而，以下說明 之變形例則係將1C晶片5配載於金屬薄膜上之RFIC標籤 之構成例。此處，係針對於液晶面板之用以密封液晶層之 玻璃基板當中之配設著共用電極（金屬物）之玻璃基板配載 -13- 200821949 (11) 1C晶片5之RFIC標籤之以共用電極做爲其天線之構成例 進行說明。 第7圖A係用以密封液晶之上部及下部玻璃基板之剖 面圖，第7圖B係以配設於上部玻璃基板之共用電極做爲 天線之RFIC標籤之槪要圖，第7圖C係於第7圖B之配設 於 A部之凹部形成ITO(Indium-Tin-Oxide)膜前之放大斜 視圖，第7圖D係於凹部形成ITO膜後之斜視圖。 如第7圖A所示，於上部玻璃基板3 1及下部玻璃基板 3 3之間配設著間隙，以密封材3 5圍繞四周，對間隙內注入 液晶而成爲液晶層3 7。預先於上部玻璃基板3 1之內面側形 成共用電極（金屬物）3 2。此外，預先於下部玻璃基板3 3之 內面側形成TFT(Thin Film Transistor)34及像素電極36。 共用電極32係較大圖案之ITO之透明電極，通常係利 用濺鍍形成於上部玻璃基板3 1上。 第7圖A〜第7圖D所示之本變形例時，如第7圖B所 示，於形成共用電極3 2時，同時，利用濺鍍於上部玻璃基200821949 (1) Description of the Invention [Technical Field of the Invention] The present invention relates to an RFIC tag mounted on a metal object and a method of using the same. [Prior Art] In recent years, an RFIC (Radio Frequency Integrated Circuit) tag having a 1C chip that operates using radio waves, a reader, a writer, or a reader/writer (hereinafter, collectively referred to as read/write) Between the two, the RF 1C system that implements data transmission by radio waves has become popular. Since the RF 1C system uses the antennas provided by the RFIC tag and the reader/writer to perform data transmission and reception, the RFIC tag can communicate with the reader/writer farther away, and because it is less susceptible to Because of the advantages of the influence of dirt, etc., it is used in various applications such as production management, logistics management, and room entrance management. When an RFIC tag that operates in the UHF band and the SHF band with a dipole antenna is placed directly on a metal object or the like and is close to metal, it cannot be activated. Therefore, when the RFIC tag is mounted on a metal object, a spacer formed of plastic or rubber is disposed between the RFIC tag and the metal object, and a certain distance is set between the metal object and the antenna to suppress the metal. The method of influence. However, if the spacer is too thin to narrow the surface of the metal object and the antenna, the RFIC tag will not be activated. On the other hand, if the spacer is too thick, the spacing between the metal and the antenna is increased, although communication can be increased. Distance -4- 200821949 (2) 'However' The RFIC label protrudes from the surface of metal objects. In the handling of metal objects, there is a problem that the RFIC label is damaged due to the contact of surrounding objects and metal objects. In order to improve the above problem, the RFIC tag described in Japanese Laid-Open Patent Publication No. 2005-3 098 1 (refer to FIG. 2, FIG. 4, FIG. 6 and FIG. 7) is attached to the metal of the aforementioned dipole antenna. The object mounting surface is provided with a soft magnetic material, or a soft magnetic material and a separator are provided on the metal object mounting surface of the dipole antenna from the metal object side, or a metal object mounting surface of the dipole antenna A separator, a soft magnetic material, and a separator are provided from the metal object side. SUMMARY OF THE INVENTION However, the RFIC tag of the conventional technology described in Japanese Laid-Open Patent Publication No. 2005-3 098 1 1 is to mount a 1C chip on a dipole antenna and mount it on a metal object if the communication wavelength is λ, the length of the antenna of half the wavelength (λ /2) is required, and there is a disadvantage that the RFIC tag is large. In view of the above problems, it is a primary object of the present invention to provide an RFIC tag which can be disposed on a metal object and which is smaller than conventional ones. The RFIC tag according to the first aspect of the present invention is characterized in that a 1C wafer that is operated by radio waves is placed on a conductive thin plate or film, and a conductive thin plate or film is provided on both end sides thereof. The connecting portion is electrically connected or the electrostatic capacitor is connected to the metal object, and the metal material constitutes the antenna of the 1C chip. The conductive thin plate or film is provided at the intermediate portion to match the impedance of the antenna and the impedance of the 1C chip. The impedance matching circuit mounts at least the impedance matching circuit portion from a metal object with a specific interval of -5, 2008, 21949 (3). Secondly, it is characterized in that the length of the impedance matching circuit portion of the conductive thin plate or the film is smaller than λ /2 when the wavelength of the transmitted or received electric wave is λ. According to the present invention, since the metal surface of the metal object can function as an antenna of the 1C chip, the length of the impedance matching circuit portion of the conductive thin plate or film carrying the 1C wafer is less than the communication wavelength of the 1C chip; 1/2, a thin plate loaded with a 1C chip can also be an RF 1C tag for communication. Further, the RF 1C tag according to the second aspect of the present invention is an RFIC tag including a small gate having a small antenna that is operated by a radio wave and a small antenna for impedance matching, and is characterized in that it is small. The connection portion of the specific end portion of the antenna is electrically connected, or the metal element is connected by a combination of electrostatic capacitance, and the metal object constitutes an antenna of the 1C chip, and the small antenna system sets at least the impedance matching circuit portion from the metal object at a specific interval. installation. Secondly, when the wavelength of the transmitted or received electric wave is λ, the length of the impedance matching circuit portion of the small antenna is less than λ /2 〇 according to the present invention, since the metal surface of the metal object can play the antenna of the 1C chip. The small antenna of the small gate can be used as an RFIC tag for communication even if it is less than 1/2 of the communication wavelength. The present invention encompasses the use of RF 1C tags. According to the present invention, it is possible to provide a small RFIC tag which can be placed on a metal object. 200821949 (4) [Embodiment] Hereinafter, an RFIC tag for carrying out an embodiment of the present invention will be described with reference to the drawings. <<First Embodiment>> First, the RF 1C tag according to the first embodiment of the present invention will be described with reference to FIG. 1A, FIG. 1B, FIG. 1C, and FIG. . Fig. 1A is a perspective view showing a state in which the RFIC tag of the first embodiment is mounted on a metal member (metal object), and Fig. 1B is a plan view of the RFIC frame in which the state of the 1C wafer is removed, and Fig. 1C is a plan view. FIG. 1A is a cross-sectional view taken along the line X1-X1, and FIG. 1D is an equivalent circuit diagram of the RFIC tag. The RFIC tag 1A is composed of a 1C wafer 5 and a rectangular metal plate (conductive thin plate) 10A such as copper (Cu) or aluminum (A1). As shown in Fig. 1A, the 1C wafer 5 is disposed substantially at the center of a portion (hereinafter referred to as a slit portion) l〇a of the impedance matching circuit in the intermediate portion in the longitudinal direction of the thin metal plate 10A. The connecting portion 1 〇c of the both ends of the thin metal plate 10A in the longitudinal direction is adhered to the metal member 2 by a conductive adhesive or soldering (not shown), and the lower portion of the slit portion 10a is located in the metal member 2. The specific height h of the surface is raised by, for example, 100 μm or more by the leg portion 10b bent at a substantially right angle. As shown in Fig. 1, the slit portion 10a is formed in a substantially central portion in the longitudinal direction, and is cut into a width of substantially half from the side surface side, and is bent at a right angle in the longitudinal direction, so that the entire shape becomes an L shape. The slit 6A cut into it. The positions of 5a and 5b shown in the square frame correspond to the terminal signal input and output electrodes 5a and 5b for supplying power to the antenna of the 1C chip 5 in 200821949, that is, the 1C wafer 5 is crossed across the slit 6A. For example, it is placed on the thin metal plate 1 by electrical connection by ultrasonic bonding (see FIG. 1C). Here, the thickness of the thin metal plate 10A is, for example, 100 μm. The slit portion l〇a may be sufficient to ensure a normal strength from a specific height of the surface of the metal member 2, and may be appropriately determined depending on the material of the metal thin plate 1 〇A, and the length of the slit portion 1 〇a in the longitudinal direction. L 1 is a length in the longitudinal direction of the slit L shape of the L shape, and has a length of, for example, a width of the 1 C wafer 5 on both sides in the longitudinal direction of about 3.5 mm (see FIG. 1B), for example, for example, , 7 mm or more. The length L 2 of the joint portion 10 c is, for example, about 5 mm. Thus, the overall length L2 + L1 + L2 can be about 17 mm (the unit of the wavelength λ is converted; I / 7 or less). Here, the length L1 is about 20 mm, and the total length L2 + L1 + L2 is about 30 mm. From the experiment, the communication distance is relatively long. Further, the height h of the surface of the metal member 2 from the lower surface of the slit portion 1 〇a is 10 0 μm or more, and it has been confirmed that communication is possible. The greater the height h, the greater the communication distance. Meanwhile, the number of the above-described examples is such that the width of the 1C wafer 5 in the longitudinal direction is about 0.5 mm, and the communication frequency of the 1C wafer 5 is 2.45 GHz. The length of the slit 6A, that is, the length L1 of the slit portion 10a can be appropriately set depending on the degree of impedance matching. Further, when the connecting portion 1 〇c is electrically connected by welding or the like on the surface of the metal member 2, the length L2 is not meaningful. However, when the bonding is performed by an insulating adhesive or the like, the static electricity is used. 200821949 (6) The connection of the capacity, so the length L2 is about 5 mm. The short column 6a formed by the slit 6A can be formed by outputting the signal of the 1C wafer 5 to the electrodes 5a and 5b so as to be electrically connected to the thin metal plate of the slit portion 10a so as to span the slit 6A. The portion of Fig. B) is connected in series between the slit portion 1a of the antenna and the metal member 2 and the 1C wafer 5, so that a portion of the stub 6a has a series inductance component. By using the inductance component to cancel the capacitance component in the 1C wafer 5, impedance matching between the antenna and the 1C wafer 5 can be obtained. That is, the 1C wafer 5 can use the metal member 2 having a sufficient area as an antenna, and the impedance of the 1C wafer 5 and the impedance of the antenna formed by the slit portion 10a and the metal member 2 can be matched. The slit portion 1 〇a including such a slit 6A is referred to as an impedance matching circuit. Further, the impedance matching is determined by the inductance component of the short column 6a determined by the respective lengths of the L-shaped corners of the slit 6A. According to the present embodiment, since the metal member 2 of the mounting member of the RF 1C tag 1 A functions as the antenna of the RFIC tag 1A, the length of the slit portion 10a of the RFIC tag 1A is as long as 1/4 of the communication wavelength λ. The length is as follows, and the minimum total length is also about 17 mm. Even if it is about 30 mm for increasing the communication distance, it is also a length of 1/4 or less of the wavelength λ, and the small RFIC tag can communicate. That is, according to the present embodiment, since the surface of the metal object can function as the antenna of the 1C wafer 5, even if the length of the metal thin plate supporting the 1C wafer 5 including the impedance matching circuit is smaller than the communication wavelength λ of the 1C wafer 5 In 1/2, the metal thin plate on which the 1C wafer 5 is mounted can also be an RFIC tag for communication. 200821949 (7) In addition, since the function of the impedance matching circuit is provided as long as the gap between the lower surface of the slit portion l〇a and the metal member 2 is ensured to be 100 μm or more, the surface of the metal member 2 is less protruded. When used, it is not easy to cause the RFIC tag 1 A to be hooked. Further, the metal member 2 applied to the RFIC tag 1 A of the present embodiment is a conductive metal such as aluminum (A1), carbon steel, stainless steel or copper (Cu). At the same time, stainless steel can be used regardless of the difference between the magnetic body and the non-magnetic body. Further, this embodiment is a thin metal plate 1 〇a, however, it is not limited thereto. For example, a conductive thin plate in which a thin film of a conductive metal is formed, such as plating, vapor deposition, or sputtering, and a thin plate made of a conductive resin may be used instead of the conductive metal thin plate. <<> Various Modifications of First Embodiment>> Next, a modification of the first embodiment will be described. The same configurations as those in the first embodiment are denoted by the same reference numerals and the description thereof will not be repeated. Fig. 2A shows an RFIC tag 1B in which the setting angle of the leg portion 10b of the thin metal plate 10B is different from that of the RFIC tag 1A, and the shape of the leg portion 10b is obliquely extended downward. By setting the leg portion 10b of the thin metal plate 10B to an angle as shown in Fig. 2A, when the hard material is used for the metal thin plate 10B, it is advantageous in that it can be prevented from being broken by the bending process. 2B, the leg portion 10b of the thin metal plate 10c and the connecting portion 10c are both ends in the width direction of the end portion side in the longitudinal direction of the slit portion 1a, from the total of -10 200821949 (8) 4 toward the width direction Extended RFIC tag 1C. By the arrangement of the leg portion 10b and the connecting portion 1 〇c, it is possible to more reliably ensure the interval between the slit portion 10a of the intermediate portion and the metal member 2. Fig. 3A is the same as the RF 1C label 1 A except that the connecting portion 10c is located below the slit portion 10a and is bent at a right angle to the inside of the leg portion 10b of the thin metal plate 10D. With such an installation shape, the length direction can be made smaller than that of the first embodiment. Further, when a thin metal plate having a conductive metal film formed thereon is used instead of the thin metal plate, the shape of the connecting portion 10c is easily electrically connected to the metal member 2. Fig. 3B is an RFIC tag 1E having a mounting angle different from the set angle of the leg portion 10b of Fig. 3A, and having a set angle of the leg portion 10b extending obliquely downward. Fig. 4A shows an RFIC tag 1F in which the spacer member 21 made of an insulating material is placed on the metal member 2 under the slit portion l〇a of the RFIC tag 1A (installation surface). Fig. 4B shows an RFIC tag 1G provided in the metal member 2 with the spacer member 21 made of an insulating material disposed below the slit portion 10a of the RFIC tag 1D. The material of the partition member 21 may be, for example, a thin sheet of polyethylene terephthalate (PET) or polypropylene (PP), which is attached to the slit portion by a sticker (not shown). Below. Further, as the spacer member 21, a ceramic or an epoxy resin used for a semiconductor encapsulating material can be used, and the entire RFIC tag 1F is used as a chip resistor, and it is easier to handle by a package member having the same form of a member called a chip capacitor. Since the RFIC tags IF and 1G are disposed under the slit portion -11 - 200821949 (9) l〇a, the spacer member 21 has an external force applied to the slit portion 10a, and the interval between the slit portion 10a and the surface of the metal member 2 is not. Will change the advantages. That is, plastic deformation of the bending of the metal sheets 10A, 10D can be prevented to cause a change in the communication distance. Fig. 5A is a modification of the RF 1C label 1C shown in Fig. 2B, in which the leg portion lb of the thin metal plate 10F and the connecting portion 10c are in the width direction of one end side in the longitudinal direction of the slit portion 10a. The RFIC tag 1H extending in the width direction from the total of two ends. At this time, since the height h is ensured only by the cantilever shape of the thin metal plate 10F, the thickness of the thin metal plate 10F should be larger than the RFIC label 1 A. In the case of the RFIC tag 1H, the metal member 2 can be mounted in a smaller length direction than the RFIC tag 1A. Fig. 5B shows a modification of the RFIC tag 1H, and the RFIC tag 1 1 of the connecting portion 10c of the thin metal plate 10F is further bent to the lower side of the slit portion 10a. At this time, since the height h is ensured only by the cantilever shape of the metal thin plate 1 〇 G, the thickness of the thin metal plate 10G should be larger than the RFIC label 1 A . Further, at this time, the width direction can be mounted on the metal member 2 smaller than the RFIC tag 1C and the RFIC tag 1 Η. Fig. 6 is an RFIC label 1K of a flat plate-shaped metal thin plate 10H having a flat shape of a zigzag shape, which is another variation of the RFIC tag 1 shown in Fig. 5, in which the slit portion l〇a is not overlapped. A state diagram in which the metal member 2 is mounted on the metal member 2. By mounting the RFIC tag 1K so as to protrude the slit portion 10a from the edge of the metal member 2, even if the metal members 2 overlap each other, it is not -12-200821949. (10) The 1C wafer 5 is sandwiched between the metal members 2 Between the two, the metal member 2 is strongly pressed, so that the 1C wafer 5 can be prevented from being damaged. Fig. 6B is a view showing a state in which the RFIC tag 1K is mounted on the circuit board 4 such as a printed circuit board. FIG. 6B is a view in which, for example, a wiring pattern region (metal object) 4a that is larger than the base portion and the RFIC tag 1K is placed from the edge portion to the inner side of the circuit board 4, and the circuit pattern region 4b is disposed around the circuit pattern region 4b. The RFIC tag 1K is mounted on the circuit board 4 such that the slit portion 10a is not overlapped with the wiring pattern region 4a. Thus, the RFIC tag 1K can obtain a sufficient communication distance by connecting the smaller RFIC tag 1K to the larger wiring pattern 4a formed on the circuit substrate 4. Fig. 6C is a state diagram in which the RFIC tag 1D is applied to the circuit board 4. In the sixth embodiment, the RFIC tag 1D is mounted on the wiring pattern region 4a at a position from the edge portion to the inner side of the circuit board 4 in a state where the slit portion 10a is floated from the wiring pattern region 4a. When the RFIC tag 1 D is mounted on the circuit board 4 in this manner, the position of the slit portion 1 〇a can be located at the position of the wiring pattern region 4a as compared with the case of FIG. 6B, so that the RFIC tag 1D can be easily used. It is mounted on the circuit board 4. The first embodiment and the above-described respective modifications are the RFIC tags in which the 1C wafer 5 is placed on the metal thin plate. However, the modification described below is the RFIC in which the 1C wafer 5 is placed on the metal thin film. An example of the composition of a tag. Herein, the glass substrate on which the common electrode (metal) is disposed among the glass substrates for sealing the liquid crystal layer of the liquid crystal panel is loaded with the common electrode of the RFIC tag of the semiconductor chip of the semiconductor chip 13-200821949 (11) 1C wafer 5 A description will be given of a configuration example of the antenna. Fig. 7A is a cross-sectional view for sealing the upper and lower glass substrates of the liquid crystal, and Fig. 7B is a schematic diagram of the RFIC label of the common electrode disposed on the upper glass substrate as an antenna, Fig. 7C An enlarged perspective view of the ITO (Indium-Tin-Oxide) film is formed in the recessed portion of the portion A in FIG. 7B, and FIG. 7D is a perspective view of the recessed portion after the ITO film is formed. As shown in Fig. 7A, a gap is disposed between the upper glass substrate 3 1 and the lower glass substrate 33, and the sealing material 35 surrounds the periphery, and liquid crystal is injected into the gap to form the liquid crystal layer 37. A common electrode (metal) 3 2 is formed in advance on the inner surface side of the upper glass substrate 31. Further, a TFT (Thin Film Transistor) 34 and a pixel electrode 36 are formed in advance on the inner surface side of the lower glass substrate 33. The common electrode 32 is a transparent electrode of a larger pattern of ITO, and is usually formed on the upper glass substrate 31 by sputtering. In the present modification shown in Figs. 7A to 7D, as shown in Fig. 7B, when the common electrode 32 is formed, sputtering is applied to the upper glass base.
板31上形成RFIC標籤1L之金屬薄膜（導電性之薄膜）i〇L 〇 金屬薄膜10L具有長度方向之兩端連結於彎曲成L字 形之共用電極3 2之連結部1 0 c、及具有中央部之L字形狀 之切入之細縫6A之細縫部10a。細縫部10a之長度，例如 ，最小爲7 mm，最好爲20 mm。其次，以對1C晶片5之天 線供電之端子之圖示省略之信號輸出入電極5a、5b跨越 細縫6A之方式將1C晶片5以例如超音波接合之電性連結 •14- 200821949 (12) 配載於金屬薄膜10L。 配載著1C晶片5之上部玻璃基板31之部份，如第7圖 B之A部之放大之第7圖C所示（只是，係除去1C晶片5之 狀態），配設著矩形之凹部27，且從凹部27之底部27c至上 部玻璃基板3 1之表面部份配設著相連之平面形狀爲L字形 之溝28。底部27c之矩形之尺寸係與1C晶片5爲大致相同 寸法，從其上部玻璃基板3 1之平滑表面部份之深度，係可 涵蓋1C晶片5之厚度者。 相當於金屬薄膜10L之長度方向之凹部27之側壁爲傾 斜面27a，此外，相當於金屬薄膜10L之寬度方向之凹部 2 7之側壁，一方爲垂直面27b，另一方爲傾斜面27a。用以 構成配設於底部27c之L字形之較短部份之溝28之端部， 係抵觸並封閉垂直面27b。溝28之側壁係由垂直面所構成 〇 此種凹部27及溝28，於製造上部玻璃基板31時，例如 ，利用模具來形成。 形成凹部27及溝2 8後，如第7圖C之箭頭所示，利用 ITO之濺鍍形成共用電極32，同時，形成金屬薄膜l〇L。 第7圖D係形成金屬薄膜10L後之狀態，形成金屬薄膜l〇L 時，因爲未利用異向性沉積於溝2 8之側壁及凹部2 7之垂直 面2 7b形成ITO之金屬薄膜10L，利用溝28之側壁及凹部 27之垂直面27b形成細縫6A。 藉由以此方式形成凹部27，並將1C晶片5載置於其上 ，1C晶片5之上面會收容於凹部27之深度內，上部玻璃基 -15- 200821949 (13) 板31之表面成爲無突出之平滑表面。 依據第7圖A〜第7圖D所示之本變形例，因爲RF 1C 標籤1L介由連結部10c電性連結之較大圖案之共用電極32 具有1C晶片5之天線之作用，RFIC標籤1L之細縫部l〇a 之長度方向之長度只要通信波長λ之1/4以下之長度即可 ，最小約爲7 mm，即使爲了延長通信距離而爲約2 0 mm， 亦爲波長λ之1/4以下之長度，可與小型之RFIC標籤1L 進行通信。亦即，依據本實施形態，因爲ITO之透明電極 之共用電極3 2可發揮IC晶片5之天線之作用，含有阻抗匹 配電路在內之配載著IC晶片5之金屬薄膜1 0 L之長度即使 短於1C晶片5之通信波長λ之1/2，配載著1C晶片5之金 屬薄膜10L亦可成爲RFIC標籤進行通信。 此外，第7圖B之細縫6A係利用ITO之濺鍍形成於 形成著溝28及垂直面27b之上部玻璃基板31，然而，亦可 以利用光阻之遮罩來形成細縫6A。 <<第2實施形態>> 其次，參照第8圖A及第8圖B，針對本發明之第2實 施形態之小型閘口之形態之RFIC標籤進行說明。第8圖A 係將本實施形態之小型閘口裝設於金屬構件（金屬物）之狀 態之斜視圖，第8圖B係第8圖A之X2-X2之箭頭方向之 剖面圖。與第1實施形態相同之構成，附與相同符號，並 省略重複說明。A metal thin film (conductive thin film) of the RFIC label 1L is formed on the plate 31. The metal thin film 10L has a connecting portion 10c that is connected to the common electrode 3 2 bent in an L shape in the longitudinal direction, and has a center. The slit portion 10a of the slit 6A cut into the L shape of the portion. The length of the slit portion 10a, for example, is at least 7 mm, preferably 20 mm. Next, the signal output/output electrodes 5a and 5b, which are omitted from the illustration of the terminals for supplying power to the antenna of the 1C wafer 5, electrically connect the 1C wafer 5 by, for example, ultrasonic bonding, across the slit 6A. 14- 200821949 (12) It is loaded on the metal film 10L. A portion of the glass substrate 31 on the upper portion of the 1C wafer 5 is placed, as shown in FIG. 7C of the enlarged portion A of FIG. 7B (only in a state in which the 1C wafer 5 is removed), and a rectangular recess is provided. 27, and a groove 28 having an L-shaped planar shape is disposed from a bottom portion 27c of the concave portion 27 to a surface portion of the upper glass substrate 31. The size of the rectangle of the bottom portion 27c is substantially the same as that of the 1C wafer 5, and the depth of the smooth surface portion of the upper glass substrate 31 can cover the thickness of the 1C wafer 5. The side wall of the concave portion 27 corresponding to the longitudinal direction of the metal thin film 10L is the inclined surface 27a, and the side wall corresponding to the concave portion 27 in the width direction of the metal thin film 10L is one of the vertical surface 27b and the other is the inclined surface 27a. The end portion of the groove 28 for constituting the shorter portion of the L-shaped portion provided at the bottom portion 27c is in contact with and closes the vertical surface 27b. The side wall of the groove 28 is formed of a vertical surface. The recess 27 and the groove 28 are formed by, for example, a mold when the upper glass substrate 31 is manufactured. After the concave portion 27 and the groove 28 are formed, as shown by the arrow in Fig. 7, the common electrode 32 is formed by sputtering of ITO, and the metal thin film l〇L is formed. Fig. 7D shows a state in which the metal thin film 10L is formed. When the metal thin film 10L is formed, since the metal thin film 10L of ITO is formed by the anisotropic deposition on the sidewall of the trench 28 and the vertical surface 27b of the recess 27, The slit 6A is formed by the side wall of the groove 28 and the vertical surface 27b of the recess 27. By forming the concave portion 27 in this manner and placing the 1C wafer 5 thereon, the upper surface of the 1C wafer 5 is accommodated in the depth of the concave portion 27, and the surface of the upper glass substrate -15-200821949 (13) plate 31 becomes A smooth surface that protrudes. According to the present modification shown in FIGS. 7A to 7D, the common electrode 32 of the larger pattern in which the RF 1C tag 1L is electrically connected via the connection portion 10c functions as an antenna of the 1C wafer 5, and the RFIC tag 1L The length of the slit portion l〇a in the longitudinal direction may be a length of 1/4 or less of the communication wavelength λ, and the minimum is about 7 mm, even if it is about 20 mm for extending the communication distance, it is also 1/1 of the wavelength λ. The length of 4 or less can communicate with the small RFIC tag 1L. That is, according to the present embodiment, since the common electrode 32 of the transparent electrode of ITO can function as an antenna of the IC wafer 5, even if the length of the metal thin film of the IC wafer 5 including the impedance matching circuit is 10 L, The metal film 10L on which the 1C wafer 5 is placed may be shorter than the communication wavelength λ of the 1C wafer 5, and may be an RFIC tag for communication. Further, the slit 6A of Fig. 7B is formed by sputtering of ITO on the glass substrate 31 on which the groove 28 and the vertical surface 27b are formed. However, the slit 6A may be formed by using a mask of photoresist. <<2nd Embodiment>> Next, an RFIC tag in the form of a small gate according to the second embodiment of the present invention will be described with reference to Figs. 8 and 8B. Fig. 8 is a perspective view showing a state in which a small gate of the present embodiment is attached to a metal member (metal), and Fig. 8B is a cross-sectional view taken along the line X2-X2 of Fig. 8A. The same configurations as those in the first embodiment are denoted by the same reference numerals and the description thereof will not be repeated.
本實施形態之小型閘口，具有IC晶片、及可形成IC -16- 200821949 (14) 晶片之阻抗匹配用電路之長度及寬度之小型天線，係將該 等固定於基底之薄膜等之上。 如第8圖A所示，小型閘口 3 A係於例如由絕緣體聚對 酞酸乙二酯（PET)、聚丙烯（PP)等所構成之基底膜13之表 面，以成膜、印刷等形成由A 1等之電性導體之金屬薄膜 所構成之直線形狀之小型天線1 1 A，係於形成配設在小型 天線1 1 A之長度方向之兩端部之連結部1 1 b之中間部之L 字形狀之細縫6A而配設之阻抗匹配用電路之部份（以下’ 稱爲細縫部）1 la，配載1C晶片5。此時，1C晶片5之信號 輸出入電極5a、5b(參照第8圖B)係跨越細縫6A，而介由 超音波接合、共晶接合、異向性導電膜等電性連結於小型 天線1 1 A。 小型天線11A之長度（L2 + L1+L2)若爲約30 mm，接收 及傳送所使用之2.45 GHz之電波之波長爲λ時’係波長 λ之1/4以下之長度。此種構成之小型閘口 3Α，如第8圖A 所示，此外，於細縫部1 1 a之下面側（裝設面側）’具有由 以未圖示之粘著材貼附之絕緣材所構成之隔離構件2 1，利 用塗佈於小型閘口 3 A之背面之粘著材1 5貼附於金屬構件2 之表面。此時，小型天線1 1 A之兩方之連結部1 1 b係介由 基底膜1 3及粘著材1 5以靜電容結合而連結於金屬構件2。 本實施形態時，「小型天線之特定端部」係指小型天線 11A之兩方之特定長度L2之連結部lib藉由靜電容結合而 連結於金屬構件2。 如第8圖 A所示，具有細縫部1 1 a於長度方向之大致 -17- 200821949 (15) 中央部份從側面側形成大約寬度一半之切入，此外，於長 度方向彎曲成直角，而全體之平面形狀呈L字形狀之切入 之細縫6A。 此處，小型天線1 1A之厚度，例如，爲20 μιη，基底 膜13之厚度，例如，爲20 μηι，隔離構件21之厚度，例如 ，爲80 μιη以上。 此外，細縫部1 1 a之長度方向之長度L 1係前述L字形 狀之細縫6 A之長度方向之長度，例如，於約3.5 mm之長 度方向之兩側具有足夠1C晶片5之寬度等之長度之7 mm 以上之長度。連結部1 1 b之長度L2，例如，約5 mm。如 此，全體之長度L2 + L1+L2可以爲約17 mm(換算成波長λ 之單位爲λ /7以下）。此處，長度L1約爲20 mm，全體之 長度L2 + L1+L2約爲30 mm，由實驗可知，通信距離相對 較長。 同時，細縫部1 1 a之下面之從金屬構件2之表面之間 隔tl爲100 μιη以上，已確認可進行通信。該間隔tl愈大 ，則通信距離會愈大。 此外，連結部1 1 b利用靜電容結合而連結於金屬構件 2時，只要連結部1 1 b之下面及金屬構件2之表面之間隔12 滿足0<t2<3 0 0 μιη，已確認可進行通信。該間隔t2愈大， 連結部1 1 b之面積亦必須增大。亦即，必須增加連結部 11b之長度方向之長度L2。 同時，前述例示之數値，係1C晶片5之長度方向之寬 度約爲0· 5 mm、1C晶片5之通信頻率爲2.45 GHz時。細縫 -18- 200821949 (16) 6A之長度（約3.5 mm)，亦即，細縫部1 la之長度可依據阻 抗匹配之程度來進行適度設定。 此外，因爲已知連結部1 1 b及金屬構件2之表面之間 隔t2至3 0 0 μιη爲止，靜電容結合沒有問題，故使基底膜 13及粘著材15之兩方之合計厚度（間隔t2)成爲3 00 μηι以 下，如第8圖Α所示，無需積極地將隔離構件2 1配置於細 縫部1 1 a之下面，只要貼附於金屬構件2即可。藉此，因 爲細縫部1 1 a之下面及金屬構件2之表面之間隔11確保爲 1 0 0 // m以上，故確認可進行通信。 藉由將1C晶片5之信號輸出入電極5a、5b以跨越細 縫6 A而位於兩側之方式電性連結於細縫部1 1 a之金屬薄膜 ，並將利用形成細縫6A所形成之短柱6a之部份串聯於天 線之細縫部1 1 a及金屬構件2、與1C晶片5之間，故可發 揮串聯於短柱6a之部份之電感成分之作用。利用該電感 成分來抵銷1C晶片5內之電容成分，而獲得天線及1C晶 片5之阻抗匹配。 亦即，I C晶片5可將充份面積之金屬構件2做爲天線 ，而且，可使1C晶片5之阻抗、細縫部1 1 a、以及金屬構 件2所形成之天線之阻抗得到匹配。將含有此種細縫6A之 細縫部1 1 a稱爲阻抗匹配電路。 此外，阻抗匹配係由至細縫6A之L字型之角部爲止 之各長度所決定之短柱6a之電感成分來決定。 因爲本實施例，因爲小型閘口 3A之裝設構件之金屬 構件2具有小型閘口 3 A之天線之作用，小型天線1 1 A之細 -19 - 200821949 (17) 縫部11a之長度方向之長度只要通信波長λ之1/4以下之長 度即可，最小全長（L2 + L1+L2)約爲17 mm，即使爲了增加 通信距離而爲約30 mm，亦爲波長λ之1/4以下之長度，小 型閘口 3 Α可進行通信。亦即，依據本實施形態，因爲金 屬物之表面可以具有1C晶片5之天線之作用，即使包含阻 抗匹配電路在內之配載著1C晶片5之小型閘口 3A之長度 小於1C晶片5之通信波長Λ之1/2，配載著1C晶片5之金 屬薄板亦可成爲RF 1C標籤而進行通信。 此外，因爲只要細縫部1 1 a之下面及金屬構件2之間 隙確保爲1 〇〇 μιη以上而具有阻抗匹配電路之機能即可， 故從金屬構件2之表面突出較小，不易發生小型閘口 3 Α被 勾住之情形。 此外，應用於本實施形態之小型閘口 3A之金屬構件2 爲鋁（AL)、碳鋼、不鏽鋼、銅（Cu)等之導電性金屬。同時 ，無關磁性體、非磁性體之差異，亦可採用不鏽鋼。 將此種小型閘口 3 A貼附於標籤用紙之粘著材塗布面 側，而於貼附標籤時，同時進行貼附，可以將該標籤應用 於鋼材等之歷程管理。尤其是，原子能用或船舶用之鋼材 之品質管理極爲重要，裁切購入時爲特定規格之鋼管或鋼 板所剩下之端材，通常爲沒有素材出廠時之品質証明標記 側。其時，亦可以裁切前貼附附有具品質証明內容之小型 閘口 3A之標籤，利用1C晶片5記憶品質証明之內容，利 用端材時之品質檢查時，只要使讀取/寫入器靠近標籤， 很容易即可判別。 -20- 200821949 (18) <<第2實施形態之第1變形例>> 其次，參照第9圖A、第9圖B，針對第2實施形態之 第1變形例進行說明。與第2實施形態相同之構成，附與相 同符號，並省略重複說明。 第2實施形態係將小型閘口 3A裝設於金屬構件2之表 面者，本變形例係採用將小型閘口 3 A埋設於形成在金屬 物之凹部之方法。 第9圖A係針對將小型閘口裝設於配設在螺栓頭之凹 部之使用方法之說明圖，係螺栓頭之平面圖。第9圖B係 弟9圖A之X3-X3之箭頭方向之縱剖面圖。只是，爲了容 易了解，第9圖A係充塡密封材1 7前之狀態。 本變形例係於導電性金屬，例如，碳鋼或不鏽鋼等之 螺栓（金屬物）7頭配設大致圓筒形之凹部2 5，此外，於凹 部2 5之周壁之朝直徑方向外側突出之相對位置形成肩部2 6 ，以導電性接著劑1 6將小型閘口 3 A之連結部固定於該肩 部26。其次，對凹部25充塡密封材17，使螺栓7頭成爲平 坦。 密封材1 7係絕緣性之材料，例如，可以使用環氧樹脂 、低溫玻璃（密封）等。 如此，將小型閘口 3 A裝設於金屬物之凹部2 5內來使 用時，爲了避免凹部25之周壁之影響，不但要確保與細縫 部之下側之凹部2 5之底面之間隔，如第9圖A所示，尙必 須確保與細縫部之側方之周圍之間隔。藉由此種構成，可 -21 - 200821949 (19) 與於平坦之金屬物表面裝設小型閘口 3A之狀態相同。 此外，使小型閘口 3A位於比螺栓7頭之表面更淺之位 置，可以具有較長之通信距離。 第9圖C係應用於口徑小於第9圖A所示之螺栓之螺 栓時之螺栓頭之平面圖。細縫部必須以使小型閘口 3 A對 應於凹部25之直徑方向中央之方式來進行配置。 如此，藉由將小型閘口 3 A配置於螺栓7之凹部2 5內並 充塡密封材1 7之埋入使用，使螺栓7具有天線之作用，可 與配載於被埋入之小型閘口 3 A之IC晶片5進行通信。此 外，因爲小型閘口 3 A被埋於內部，故可防止破損。其次 ，埋入著小型閘口 3 A之螺栓7，可以將裝設著螺栓7之物 品之品質管理資料等記憶於1C晶片5來進行管理。此外， 螺栓7本身亦可當做螺絲固定式之RFIC標籤來使用。 <<第2實施形態之第2變形例>> 其次，參照第10圖，針對第2實施形態之第2變形例進 行說明。與第1變形例相同之構成，附與相同符號，並省 略重複說明。 第1 〇圖A係於代幣配設凹部並裝設小型閘口之使用 方法之說明圖，係代幣之斜視圖。第1 0圖B係第1 〇圖 A 之X4-X4之箭頭方向之縱剖面圖。只是，爲了容易了解， 第1 〇圖A係充塡密封材1 7前之狀態。 本變形例係於導電性金屬，例如，黃銅、白銅、鋁合 金等所形成之代幣（金屬物）8之1面側形成開口而配設略呈 -22- 200821949 (20) 圓筒形之凹部2 5，此外’於直徑方向朝外側突出之相對位 置形成肩部26，利用導電性接著劑1 6將小型閘口 3 A之連 結部固定於該肩部26。其次’對凹部25充塡密封材17，使 代幣8之前述1面側成爲平坦。 如此，藉由將小型閘口 3 A埋入代幣8來使用，代幣8 具有天線之作用，可與配載於被埋入之小型閘口 3A之1C 晶片5進行通信。此外’因爲小型閘口 3 A被埋於內部，故 可防止破損。其次，埋入著小型閘口 3 A之代幣8本身，可 以做爲例如電動玩具店之代幣來使用。於使用代幣8玩遊 戲之遊戲場入口，顧客將所取得之代幣8投入各遊戲機， 可與遊戲機側之1C晶片5進行通信，實施資料之讀取寫入 ，而增減更新記憶於1C晶片5之顧客之點數，顧客於電動 玩具店遊戲時，無需隨身帶著大量代幣。此外，亦可利用 其來實施顧客玩過那些遊戲機等之傾向分析等。 此外，前述第2實施形態之第1及第2變形例時，係以 導電性接著劑1 6裝設小型閘口 3 A，然而，因爲係介由未 圖示之基底膜之靜電容結合來連結，故亦可以絕緣性之接 著劑來裝設。 此外，前述第2實施形態之第1及第2變形例時，係利 用利用小型閘口 3 A時進行說明，然而，亦可使第1實施形 態之RFIC標籤1A之金屬薄板l〇a延伸成平板狀，並將該 連結部以焊接等熔接裝設於凹部25之肩部26來使用。 此外，於螺栓7或代幣8形成凹部25後，對凹部25之底 部至肩部26之上面之高度爲止注入密封材17，使其上面成 -23- 200821949 (21) 爲平坦，亦可以例如噴墨方式將金屬薄膜（導電性之薄膜） 印刷於其上，形成重疊於細縫部及肩部26之連結部，其後 ，將1C晶片5配載於細縫部，來構成RFIC標籤。最後， 充塡密封材17至凹部25之上端爲止，使螺栓7或代幣8之上 端面成爲平滑。 此外，前述第1實施形態及其變形例、及前述第2實施 形態及其變形例時，用以形成阻抗匹配用電路之細縫係L 字形狀，然而，並未受限於此，亦可以爲第1 1圖A所示 之T字形狀之細縫6B。 爲了容易了解，第11圖A係除去1C晶片5之狀態之 小型閘口 3 B之平面圖，第1 1圖B係將小型閘口 3 B裝設於 金屬構件時之等效電路圖。 【圖式簡單說明】 第1圖A係本發明之第1實施例之形態之RF 1C標籤之 槪略構成圖，係將RF 1C標籤裝設於金屬構件（金屬物）之 狀態之斜視圖。 第1圖B係第1實施例之除去1C晶片之狀態之RFIC 標籤之平面圖。 第1圖C係第1圖A之X1-X1之箭頭方向之剖面圖。 第1圖D係第1實施例之RFIC標籤之等效電路圖。 第2圖A係本發明之第1實施形態之變形例之RFIC標 籤之槪略構成圖，係腳部之設定角度不同之RFIC標籤之 斜視圖。 -24- 200821949 (22) 第2圖B係腳部及連結部於細縫部之長度方向端部側 之兩方之寬度方向端，從合計4處朝寬度方向延伸之RFIC 標籤之斜視圖。 第3圖 A係本發明之第1實施形態之另一變形例之 RFIC標籤之槪略構成圖，係相對於腳部，使連結部位於 細縫部之下方並朝內側彎曲成直角之RFIC標籤之斜視圖 〇 第3圖B係第3圖A之腳部設定角度爲不同時之裝設 形狀之RFIC標籤之斜視圖。 第4圖A係本發明之第1實施形態之另一變形例，係 於細縫部之下面配置隔離構件之RFIC標籤，連結部朝長 度方向延伸者之側面圖。 第4圖B係將連結部彎曲配置於細縫部之下方側者之 側面圖。 第5圖A係第2圖A所示之RF I C標籤之變形之斜視圖 〇 第5圖B係第5圖A所示之RFIC標籤之變形之斜視圖 〇 第6圖A係第5圖A所示之RFIC標籤之變形之斜視圖 〇 第6圖B係將第6圖A所示之RFIC標籤裝設於電路基 板之狀態之斜視圖。 第6圖C係將第3圖A所示之RFIC標籤應用於電路基 板之狀態之斜視圖。 -25- 200821949 (23) 第7圖A係用以封入液晶之上部及下部玻璃基板之剖 面圖。 第7圖B係將配設於上部玻璃基板之共用電極當做天 線之RFIC標籤之槪要圖。 第7圖C係第7圖B之A部之凹部之放大斜視圖。 第7圖D係於凹部形成ITO膜後之斜視圖。 第8圖 A係本發明之第2實施形態之小型閘口之斜視 圖。 第8圖B係第8圖A之X2-X2之箭頭方向剖面圖。 第9圖A係將小型閘口裝設於配設在螺栓頭之凹部之 使用方法之說明圖，係螺栓頭之平面圖。 第9圖B係第9圖A之X3-X3之箭頭方向之縱剖面圖 〇 第9圖C係口徑小於第9圖A所示之螺栓之螺栓時之 螺栓頭之平面圖。 第1 0圖A係將小型閘口裝設於配設在代幣凹部之使 用方法之說明圖，係代幣之斜視圖。 第10圖B係第1〇圖A之X4-X4之箭頭方向之縱剖面 圖。 第1 1圖A係形成平面形狀不同之細縫之小型閘口之 平面圖。 第1 1圖B係將小型閘口裝設於金屬構件時之等效電路 圖。 -26- 200821949 (24) 【主要元件符號說明】 I A : RFIC 標籤 1B : RFIC 標籤 1C : RFIC 標籤 1D : RFIC 標籤 IE : RFIC 標籤 IF : RFIC 標籤 1G : RFIC 標籤 1H : RFIC 標籤 II : FIC標籤 1 J : RFIC 標籤 IK : RFIC 標籤 2 :金屬構件 3 A :小型閘口 3 B :小型閘口 4 :電路基板 4a :配線圖案區域 4 b :電路圖案區域 5 : 1C晶片 5a:信號輸出入電極 5b :信號輸出入電極 6A :細縫 6a :短柱 6B :細縫 -27 200821949 (25) 7 :螺栓 8 :代幣 10A :金屬薄板 10B :金屬薄板 10C :金屬薄板 1 〇 D :金屬薄板 10E :金屬薄板 10F :金屬薄板 10G :金屬薄板 10H :金屬薄板 10L :金屬薄板 l〇a :細縫部 l〇b :腳部 1 0 c ·連結部 1 1 A :小型天線 1 1 B :小型天線 1 1 a :細縫部 1 1 b :連結部 1 1 c :細縫部 1 3 :基底膜 1 5 _·粘著材 1 6 :導電性接著劑 1 7 :密封材 2 1 :隔離構件 -28 200821949 (26) 2 5 :凹部 2 6 .肩部 2 7 :凹部 2 7 a :傾斜面 2 7b :垂直面 27c :底部 28 :溝 3 1 :上部玻璃基板 32 :共用電極 3 3 :下部玻璃基板 34 : TFT 3 5 :密封材 3 6 :像素電極 3 7 :液晶層 -29 -The small gate of the present embodiment has an IC chip and a small antenna which can form the length and width of the impedance matching circuit of the IC-16-200821949 (14) wafer, and is fixed to the film or the like of the substrate. As shown in FIG. 8A, the small gate 3A is formed on the surface of the base film 13 made of, for example, polyethylene terephthalate (PET) or polypropylene (PP), which is formed by film formation, printing, or the like. A linear small antenna 1 1 A composed of a metal thin film of an electric conductor such as A 1 is formed in an intermediate portion of a connecting portion 1 1 b disposed at both end portions of the small antenna 1 1 A in the longitudinal direction. The portion of the impedance matching circuit (hereinafter referred to as a slit portion) 1 la is disposed in the L-shaped slit 6A, and the 1C wafer 5 is loaded. At this time, the signal output/input electrodes 5a and 5b of the 1C wafer 5 (see FIG. 8B) cross the slit 6A, and are electrically connected to the small antenna via ultrasonic bonding, eutectic bonding, and anisotropic conductive film. 1 1 A. When the length (L2 + L1 + L2) of the small antenna 11A is about 30 mm, the wavelength of the electric wave of 2.45 GHz used for reception and transmission is λ, which is 1/4 or less of the wavelength λ. The small gate 3 of such a configuration is shown in Fig. 8A, and the lower surface side (the mounting surface side) of the slit portion 1 1 a has an insulating material attached by an adhesive material (not shown). The partition member 2 1 which is formed is attached to the surface of the metal member 2 by the adhesive material 15 applied to the back surface of the small gate 3 A. At this time, the connection portion 1 1 b of both the small antennas 1 1 A is coupled to the metal member 2 via the base film 13 and the adhesive material 15 by electrostatic capacitance. In the present embodiment, the "specific end portion of the small antenna" means that the connection portion lib of the specific length L2 of both of the small antennas 11A is coupled to the metal member 2 by electrostatic capacitance. As shown in Fig. 8A, the slit portion 11a is substantially -17-200821949 in the longitudinal direction. (15) The central portion is formed by cutting about half the width from the side surface, and is bent at right angles in the longitudinal direction, and the whole The flat shape is a slit 6A cut into an L shape. Here, the thickness of the small antenna 11A is, for example, 20 μm, and the thickness of the base film 13 is, for example, 20 μm, and the thickness of the spacer member 21 is, for example, 80 μm or more. Further, the length L 1 in the longitudinal direction of the slit portion 1 1 a is the length in the longitudinal direction of the L-shaped slit 6 A, and for example, has a width of 1 C wafer 5 on both sides in the longitudinal direction of about 3.5 mm, and the like. The length of 7 mm or more in length. The length L2 of the joint portion 1 1 b is, for example, about 5 mm. Thus, the total length L2 + L1 + L2 can be about 17 mm (the unit of the wavelength λ is λ / 7 or less). Here, the length L1 is about 20 mm, and the total length L2 + L1 + L2 is about 30 mm. From the experiment, the communication distance is relatively long. At the same time, the distance t from the surface of the metal member 2 below the slit portion 1 1 a is 100 μm or more, and communication is confirmed. The larger the interval t1, the larger the communication distance will be. Further, when the connecting portion 1 1 b is coupled to the metal member 2 by electrostatic capacitance, it is confirmed that the interval 12 between the lower surface of the connecting portion 1 1 b and the surface of the metal member 2 satisfies 0 < t2 < 3 0 0 μη Communication. The larger the interval t2, the larger the area of the joint portion 1 1 b must also be. That is, it is necessary to increase the length L2 of the connecting portion 11b in the longitudinal direction. Meanwhile, the number of the above-described examples is such that the width of the 1C wafer 5 in the longitudinal direction is about 0.5 mm, and the communication frequency of the 1C wafer 5 is 2.45 GHz. Slit -18- 200821949 (16) The length of 6A (approx. 3.5 mm), that is, the length of the slit 1 la can be appropriately set according to the degree of impedance matching. Further, since the gap between the surface of the connecting portion 1 1 b and the metal member 2 is known to be t2 to 300 μm, there is no problem in electrostatic capacitance bonding, so that the total thickness of both the base film 13 and the adhesive material 15 is (interval) T2) is not more than 300 μηι, and as shown in Fig. 8, it is not necessary to actively arrange the spacer member 2 1 under the slit portion 1 1 a as long as it is attached to the metal member 2. Thereby, since the interval 11 between the lower surface of the slit portion 1 1 a and the surface of the metal member 2 is secured to be 100 Ω / m or more, it is confirmed that communication is possible. By outputting the signal of the 1C wafer 5 into the electrodes 5a, 5b, the metal film is electrically connected to the slit portion 11a so as to be located on both sides across the slit 6A, and is formed by the formation of the slit 6A. The portion of the post 6a is connected in series between the slit portion 11a of the antenna and the metal member 2 and the 1C wafer 5, so that the inductance component of the portion connected in series with the stub 6a can be exerted. The inductance component is used to offset the capacitance component in the 1C wafer 5, and impedance matching between the antenna and the 1C wafer 5 is obtained. That is, the I C wafer 5 can use the metal member 2 of the sufficient area as an antenna, and the impedance of the 1C wafer 5, the slit portion 1 1 a, and the impedance of the antenna formed by the metal member 2 can be matched. The slit portion 1 1 a including the slit 6A is referred to as an impedance matching circuit. Further, the impedance matching is determined by the inductance component of the short post 6a determined by each length of the L-shaped corner portion of the slit 6A. In the present embodiment, since the metal member 2 of the mounting member of the small gate 3A has the function of the antenna of the small gate 3 A, the small antenna 1 1 A is thin 19 - 200821949 (17) The length of the slit portion 11a is long as long as communication The length of the wavelength λ is less than 1/4, and the minimum total length (L2 + L1+L2) is about 17 mm. Even if it is about 30 mm for increasing the communication distance, it is also a length of 1/4 or less of the wavelength λ. Gate 3 can communicate. That is, according to the present embodiment, since the surface of the metal object can function as the antenna of the 1C wafer 5, even the length of the small gate 3A carrying the 1C wafer 5 including the impedance matching circuit is less than the communication wavelength of the 1C wafer 5. 1/2 of the ,, the metal sheet loaded with the 1C wafer 5 can also be an RF 1C tag for communication. In addition, since the function of the impedance matching circuit is provided as long as the gap between the lower surface of the slit portion 1 1 a and the metal member 2 is 1 μm or more, the surface of the metal member 2 is less protruded, and the small gate 3 is less likely to occur. The situation in which you are hooked. Further, the metal member 2 applied to the small gate 3A of the present embodiment is a conductive metal such as aluminum (AL), carbon steel, stainless steel or copper (Cu). At the same time, stainless steel can also be used regardless of the difference between the magnetic body and the non-magnetic body. The small gate 3 A is attached to the adhesive-coated side of the label paper, and is attached at the same time as the label is attached, and the label can be applied to the management of steel and the like. In particular, the quality management of steel for atomic energy use or for ships is extremely important. The end plates of steel pipes or steel plates of a specific specification at the time of purchase are usually cut off from the quality certification mark side when the materials are not shipped. At this time, it is also possible to cut the label of the small gate 3A with the quality certification content before the cutting, and use the content of the 1C wafer 5 memory quality proof, and use the quality inspection of the end material, as long as the reader/writer is made Close to the label, it is easy to judge. -20-200821949 (18) <First Modification of Second Embodiment> Next, a first modification of the second embodiment will be described with reference to FIGS. 9A and 9B. The same configurations as those in the second embodiment are denoted by the same reference numerals, and the description thereof will not be repeated. In the second embodiment, the small gate 3A is mounted on the surface of the metal member 2. This modification employs a method of embedding the small gate 3A in a recess formed in a metal object. Fig. 9A is an explanatory view showing a method of using a small gate to be placed in a concave portion of a bolt head, and is a plan view of a bolt head. Fig. 9B is a longitudinal sectional view of the arrow direction of X3-X3 of Fig. A. However, for the sake of easy understanding, Fig. 9A is the state before the sealing material 17 is filled. The present modification is applied to a conductive metal. For example, a bolt (metal) of carbon steel or stainless steel is provided with a substantially cylindrical recess 25 at seven ends, and protrudes outward in the radial direction of the peripheral wall of the recess 25. The shoulder portion 26 is formed at a relative position, and the joint portion of the small gate 3A is fixed to the shoulder portion 26 by a conductive adhesive 16. Next, the recessed portion 25 is filled with the sealing member 17, so that the head of the bolt 7 is flat. The sealing material 17 is an insulating material, and for example, an epoxy resin, a low-temperature glass (sealing), or the like can be used. When the small gate 3A is installed in the recessed portion 25 of the metal object, in order to avoid the influence of the peripheral wall of the recessed portion 25, it is necessary to ensure the separation from the bottom surface of the recessed portion 25 on the lower side of the slit portion. As shown in Fig. A, the 尙 must be ensured to be spaced from the side of the side of the slit. With this configuration, the state can be the same as that in the case where the small gate 3A is mounted on the surface of the flat metal object. Further, the small gate 3A is placed at a position shallower than the surface of the head of the bolt 7, and can have a long communication distance. Fig. 9C is a plan view of a bolt head when the caliber is smaller than the bolt of the bolt shown in Fig. 9A. The slit portion must be disposed such that the small gate 3 A corresponds to the center in the radial direction of the recess 25. In this way, by arranging the small gate 3 A in the recess 25 of the bolt 7 and filling the sealing material 17 for use, the bolt 7 has the function of an antenna and can be placed on the small gate 3 to be embedded. The IC chip 5 of A performs communication. In addition, since the small gate 3 A is buried inside, it can be prevented from being damaged. Next, the bolt 7 of the small gate 3A is embedded, and the quality management data of the article in which the bolt 7 is mounted can be stored in the 1C wafer 5 for management. In addition, the bolt 7 itself can also be used as a screw-on RFIC tag. <<Second Modification of Second Embodiment>> Next, a second modification of the second embodiment will be described with reference to Fig. 10 . The same configurations as those in the first modification are denoted by the same reference numerals and the description thereof will not be repeated. Figure 1 is an explanatory view of the method of using the coin in the recess and installing the small gate, which is an oblique view of the token. Fig. 10B is a longitudinal sectional view of the arrow direction of X4-X4 of Fig. A. However, for the sake of easy understanding, the first figure A is filled with the state before the sealing material. The present modification is formed by forming an opening in a conductive metal, for example, a side surface of a token (metal) 8 formed of brass, white copper, aluminum alloy or the like, and is provided with a slightly -22-200821949 (20) cylindrical shape. The recessed portion 25 and the shoulder portion 26 are formed at the opposite positions in the radial direction, and the connecting portion of the small gate 3A is fixed to the shoulder portion 26 by the conductive adhesive 16. Next, the recessed portion 25 is filled with the sealing member 17, so that the one surface side of the token 8 is flat. Thus, by embedding the small gate 3 A in the token 8, the token 8 has an antenna function and can communicate with the 1C wafer 5 mounted on the buried gate 3A. In addition, since the small gate 3 A is buried inside, it can be prevented from being damaged. Secondly, the token 8 itself, which is embedded in the small gate 3 A, can be used as a token for an electric toy store, for example. At the entrance of the game field using the token 8 game play, the customer puts the acquired token 8 into each game machine, and can communicate with the 1C chip 5 on the game machine side to perform reading and writing of the data, and increase or decrease the update memory. At the customer's point of the 1C chip 5, the customer does not need to carry a large amount of tokens when playing in the electric toy store. In addition, it is also possible to carry out the tendency analysis of the game play by the customer or the like. Further, in the first and second modifications of the second embodiment, the small gate 3A is provided by the conductive adhesive 16. However, the connection is made by electrostatic coupling of a base film (not shown). Therefore, it can also be installed with an insulating adhesive. In the first and second modifications of the second embodiment, the small gate 3A is used. However, the metal thin plate 10a of the RFIC label 1A of the first embodiment may be extended into a flat plate. In the shape, the joint portion is welded to the shoulder portion 26 of the recess portion 25 by welding or the like. Further, after the concave portion 25 is formed in the bolt 7 or the token 8, the sealing member 17 is injected to the height from the bottom of the concave portion 25 to the upper surface of the shoulder portion 26, so that the upper surface thereof is flat, -23-200821949 (21), for example, In the inkjet method, a metal thin film (conductive thin film) is printed thereon to form a joint portion which is superposed on the slit portion and the shoulder portion 26. Thereafter, the 1C wafer 5 is placed on the slit portion to constitute an RFIC label. Finally, the sealing member 17 is filled to the upper end of the recessed portion 25 to smooth the end surface of the bolt 7 or the token 8. Further, in the first embodiment and its modifications, the second embodiment, and the modifications thereof, the slit for forming the impedance matching circuit has an L-shape. However, the present invention is not limited thereto. It is a T-shaped slit 6B shown in Fig. 1A. For the sake of easy understanding, Fig. 11A is a plan view of the small gate 3B in a state in which the 1C wafer 5 is removed, and Fig. 1B is an equivalent circuit diagram when the small gate 3B is mounted on a metal member. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a schematic view showing the configuration of an RF 1C tag according to a first embodiment of the present invention, and is a perspective view showing a state in which an RF 1C tag is mounted on a metal member (metal object). Fig. 1B is a plan view showing an RFIC label in a state in which a 1C wafer is removed in the first embodiment. Fig. 1C is a cross-sectional view taken along the line X1-X1 of Fig. 1A. Fig. 1D is an equivalent circuit diagram of the RFIC tag of the first embodiment. Fig. 2 is a schematic structural view of an RFIC tag according to a modification of the first embodiment of the present invention, and is a perspective view of an RFIC tag having different leg setting angles. -24- 200821949 (22) Fig. 2B is a perspective view of the RFIC label extending in the width direction from the total of four in the width direction end of the slit portion and the end portion on the longitudinal end side of the slit portion. Fig. 3 is a schematic structural view of an RFIC tag according to another modification of the first embodiment of the present invention, which is an RFIC tag in which a connecting portion is located below a slit portion and bent at a right angle to the inside with respect to the leg portion. 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 Fig. 4 is a side view showing a modification of the first embodiment of the present invention, in which the RFIC tag of the spacer member is disposed on the lower surface of the slit portion, and the connecting portion extends in the longitudinal direction. Fig. 4B is a side view showing the connecting portion being bent and disposed on the lower side of the slit portion. Fig. 5A is a perspective view showing a modification of the RF IC tag shown in Fig. 2A. Fig. 5B is a perspective view showing a modification of the RFIC tag shown in Fig. 5A. Fig. 6A is a fifth diagram A FIG. 6B is a perspective view showing a state in which the RFIC tag shown in FIG. 6A is mounted on a circuit board. Fig. 6C is a perspective view showing a state in which the RFIC tag shown in Fig. 3A is applied to a circuit board. -25- 200821949 (23) Fig. 7A is a cross-sectional view showing the upper and lower glass substrates of the liquid crystal. Fig. 7B is a schematic view showing an RFIC tag in which a common electrode disposed on an upper glass substrate is used as an antenna. Fig. 7C is an enlarged perspective view showing a concave portion of a portion A of Fig. 7B. Fig. 7D is a perspective view showing the ITO film formed in the concave portion. Fig. 8 is a perspective view showing a small gate according to a second embodiment of the present invention. Fig. 8B is a cross-sectional view taken along the line X2-X2 of Fig. 8A. Fig. 9A is an explanatory view showing a method of attaching a small gate to a recess provided in a bolt head, and is a plan view of a bolt head. Fig. 9B is a longitudinal sectional view of the arrow direction of X3-X3 of Fig. 9A. 〇 Fig. 9C is a plan view of the bolt head when the diameter of the bolt is smaller than that of the bolt of the bolt shown in Fig. 9A. Fig. 10A is an explanatory view showing a method of installing a small gate in a recessed portion of a token, and is a perspective view of a token. Fig. 10B is a longitudinal sectional view taken along the line X4-X4 of Fig. A. Fig. 11 is a plan view showing a small gate having a slit having a different planar shape. Fig. 1B is an equivalent circuit diagram when a small gate is mounted on a metal member. -26- 200821949 (24) [Key component symbol description] IA : RFIC tag 1B : RFIC tag 1C : RFIC tag 1D : RFIC tag IE : RFIC tag IF : RFIC tag 1G : RFIC tag 1H : RFIC tag II : FIC tag 1 J : RFIC label IK : RFIC label 2 : metal member 3 A : small gate 3 B : small gate 4 : circuit board 4a : wiring pattern area 4 b : circuit pattern area 5 : 1C wafer 5a : signal output electrode 5b : signal Output electrode 6A: slit 6a: short column 6B: slit -27 200821949 (25) 7 : bolt 8 : token 10A : thin metal plate 10B : thin metal plate 10C : thin metal plate 1 〇 D : thin metal plate 10E : thin metal plate 10F: thin metal plate 10G: thin metal plate 10H: thin metal plate 10L: thin metal plate l〇a: slit portion l〇b: leg portion 1 0 c · joint portion 1 1 A : small antenna 1 1 B : small antenna 1 1 a : Slit portion 1 1 b : Joint portion 1 1 c : Slit portion 1 3 : Base film 1 5 _· Adhesive material 1 6 : Conductive adhesive 1 7 : Sealing material 2 1 : Isolation member -28 200821949 (26) 2 5: recess 2 6 . shoulder 2 7 : recess 2 7 a : inclined surface 2 7b : vertical surface 27c : bottom 28 : groove 3 1 : upper Part glass substrate 32 : Common electrode 3 3 : Lower glass substrate 34 : TFT 3 5 : Sealing material 3 6 : Pixel electrode 3 7 : Liquid crystal layer -29 -