TW200821402A - System and method including a particle trap/filter for recirculating a dilution gas - Google Patents

Abstract

The present invention comprises a method and an apparatus that include a particle trap/filter for recirculating a processing gas through a system. The processing gas may be evacuated from the chamber and may pass through a particle trap/filter. A portion of the gas may recirculate back to the processing chamber while another portion of the process gas may be evacuated through mechanical backing pumps. As the processing gas flows through the particle trap/filter, contaminant substances may be captured by a filter medium inside the particle trap/filter, The recirculated portion of the processing gas may then join fresh, unrecirculated process gas and enter the processing chamber. The amount of gas recirculated may determine the amount of fresh, unrecirculated process gas that may be delivered to the process chamber.

Description

200821402 IX. Description of the Invention: [Technical Field] The present invention relates to a method and apparatus for recycling process gas in a plasma assisted chemical vapor deposition (CPECVD) process. [Prior Art] PECVD is a method of depositing a material on a substrate by exciting a process gas into a plasma state. The process gas can be continuously supplied into the chamber until the desired thickness of the deposited material is reached. During the process, process gases can be purged from the process chamber to maintain a constant pressure in the chamber. Therefore, it is necessary to supply the process gas -k to the PECVD chamber and discharge the gas from the PECVD chamber in an efficient and costly manner. [Summary of the Invention]

: Invention = A method and apparatus comprising a particulate supplement / 'for process gas passing through a system and then - venting from a chamber" and passing through a particulate trap / transition. - The second mechanical ring returns to the process chamber, while the other part of the gas permeable through the particle replenisher / filter, the particle replenisher when the process gas flows through the mass to capture the pollution ^ (5) + complement 15 / passer The re-island portion of the internal filter non-re-arrangement gas can then be combined with fresh, non-re- 楯% process gas and enter the coke. The fresh, non-recycled process gas can be combined by far from the gas. The electropolymer generated by the remote plasma source can be: after the source is not integrated with the conduit leading to the process chamber. = Process gas: The amount of gas in the process can be determined by the amount of fresh, non-recycled process gas delivered to the process chamber. In one embodiment, a particulate replenisher/filter assembly is disclosed. The assembly includes: a particulate replenisher/filter body having an inlet adapted to be coupled to a chamber outlet, and an outlet adapted to be coupled to a chamber inlet; a filter matrix disposed in the body Medium and located between the inlet and the outlet; and a heat exchange loop coupled to the filter matrix.

In another embodiment, a plasma assisted chemical vapor deposition apparatus is disclosed. The apparatus includes: a source of gas; a process chamber having a chamber outlet and a chamber inlet; and a recirculation system including a particulate replenisher/filter assembly. The assembly includes: a particulate replenisher/filter body having an inlet adapted to couple with the chamber outlet and an outlet adapted to couple with the chamber inlet; a filter matrix disposed in the body Located between the inlet and the outlet; and a heat exchange loop coupled to the filter matrix. In another embodiment, a plasma assisted chemical vapor deposition process is disclosed. The method includes: providing a fresh, non-recycled process gas to a plasma-assisted chemical vapor deposition chamber, the deposition chamber having a chamber inlet and a chamber outlet; performing a plasma-assisted chemical vapor deposition process; The process gas is discharged from the deposition chamber; the discharged process gas is passed through a particulate replenisher/filter assembly; and at least a portion of the discharged process gas is recycled back to the deposition chamber. The assembly includes: a particulate replenisher/filter body having an inlet coupled to the chamber outlet and an outlet coupled to the chamber inlet; a filter matrix disposed in the body at the inlet and outlet And a heat exchange loop coupled to the filter and the substrate. In another embodiment, a plasma assisted chemical vapor deposition process is disclosed. The method includes: providing a fresh, non-recycled process gas to a plasma assisted chemical vapor deposition chamber of 6 200821402; performing a plasma assisted chemical vapor deposition process; discharging the process gas from the deposition chamber; and making at least a portion The process gas is recirculated through a gas reconditioning hardware, the apparatus including at least one item selected from the group consisting of a particulate replenisher, a particulate filter, and combinations thereof. The process gas includes a diluent gas and a deposition gas.

In another embodiment, another plasma assisted chemical vapor deposition process is disclosed. The method includes: providing a fresh, non-recycled process gas to a plasma assisted chemical vapor deposition chamber; performing a plasma assisted chemical vapor deposition process; discharging the process gas from the deposition chamber; and causing at least a portion of the process The gas is recirculated through a gas reconditioning apparatus comprising at least one item selected from the group consisting of a particulate supplement, a particulate filter, and combinations thereof. The process gas includes at least hydrogen and decane. In another embodiment, a plasma assisted chemical vapor deposition apparatus is disclosed. The device comprises: a chamber; a process gas source coupled to the chamber; a first pressure gauge coupled between the process gas source and the chamber; and a chamber exhaust system, system and chamber The chamber is coupled. The exhaust system includes: at least one exhaust conduit coupled to the chamber; a particulate filter coupled along at least one exhaust conduit; a particulate filter exhaust conduit coupled to the particulate filter and the chamber The chamber is coupled; and at least one flow is coupled to the particulate filter exhaust conduit and electrically coupled to the first pressure gauge. In another embodiment, a plasma assisted chemical vapor deposition apparatus is disclosed. The device comprises: a chamber; a process gas source coupled to the chamber; a first pressure gauge coupled between the process gas source and the chamber; and a chamber exhaust system, system and chamber The chamber is coupled. The exhaust system includes: to 7 200821402 one less exhaust duct, coupled to the chamber; 1 small-throttle valve, which is electrically connected to the _ pressure gauge along at least the exhaust duct; The filter is coupled between the chamber and the at least one throttle valve by at least one exhaust conduit, and a particulate filter exhaust conduit coupled to the particulate filter and the chamber. [Embodiment] The present invention includes a method and apparatus comprising a particulate replenisher/filter for recirculating process gases through a system. The process gas can be discharged from the chamber and the gas passing through the particulate trap/filter can be recycled back to the process chamber while the other portion of the gas can be discharged through a mechanical baeking pump. When the process gas flows through the particle replenisher/filter, the filter matrix inside the particle replenisher/filter captures contaminants. The recycled portion of the process gas can then be combined with fresh, non-recycled process gas and into the process chamber. The recycle gas can be combined with the fresh, non-recycled process gas after it has passed through the remote plasma source. The plasma generated by the remote plasma source ensures that recycled process gases are not deposited on the conduits leading to the process chamber. The amount of recycle gas can determine the amount of fresh, non-recycled process gas delivered to the process chamber. PECVD System "Figure 1" is a side view of a PECVD system 100 purchased from AKT, a division of Applied Materials, Inc., Santa Clara, California. It will be appreciated that the invention may also be applied to other processing systems that require the introduction of a gas into a chamber, including processing by other manufacturers 8 200821402 systems. System 1 includes a process chamber 102 coupled to a gas source 104. The process chamber 102 has a wall 106 and a bottom portion 108 to define a process space 112 in part. The process space 112 can be accessed through a hole (not shown) in the wall 106 to assist in moving the substrate 140 into and out of the process chamber 102. Wall 106 and bottom 108 can be made of a single block of aluminum or other process compatible material. The wall 116 supports the upper cover assembly 11A. The process chamber 1 2 can be evacuated by a vacuum pump 184.

The temperature controlled substrate support assembly 138 can be centrally disposed within the process chamber 102. The support assembly 138 can support the substrate 140 in a process. In one embodiment, the substrate support assembly 138 includes an aluminum body 124 with at least one heater 132 embedded therein. A heater 132 (e.g., a resistive element) is disposed in the support assembly 138 and can be coupled to the power source 1 74 to controllably heat the support assembly 138 and the substrate 140 disposed thereon to a predetermined temperature. The heater 132 can maintain the substrate 14A at a uniform temperature of from about 150 ° C to at least about 460 ° C depending on the deposition processing parameters of the material to be deposited. The substrate support assembly 138 can include a two-zone embedded heater. One zone is the inner heating zone located near the center of the substrate support assembly 丨38, and the outer heating zone is located near the outer edge of the substrate support assembly 138. The external heating zone can be set at a higher temperature to compensate for the higher heat loss that may occur at the edge of the substrate support assembly 128. An exemplary two-zone heating assembly that can be used to carry out the invention is disclosed in U.S. Patent No. 5,844,205, the entire disclosure of which is incorporated herein by reference. The support assembly 138 may have a lower side 1 26 and an upper side 1 34. The upper side 1 34 is a support substrate 14 〇. The lower side 126 can have a shaft 9 200821402 rod 142 coupled thereto. The shaft 142 couples the substrate support assembly 138 to a lift system (not shown) to move the support assembly 138 between the raised processing position and the lowered position (promoting the substrate 140 into and out of the process chamber 1〇2). mobile. Shaft 142 is a conduit for electrical conductors and thermocouple wires between support assembly 138 and other components in system 1 . The bellows may be coupled between the support assembly 138 (or the shaft 142) and the bottom portion 〇8 of the process chamber 102. The bellows 146 provides a vacuum seal between the process space ι ΐ 2 φ and the atmosphere outside the process chamber 102 and aids in the vertical movement of the support assembly 138. The support assembly 1 38 can be grounded, thereby being provided by the power source 122 to the upper cover assembly 11 and the substrate support assembly 138 (either in the chamber upper cover assembly or adjacent to the chamber upper cover assembly) The rf power of the gas distribution plate assembly between the other electrodes) can excite the RF power system of the rolling body from the power source 1 22 in the process space jj 2 existing between the support assembly 138 and the distribution plate assembly 11 8 . Selectively commensurate with the substrate size 'to drive the chemical vapor deposition process β # support assembly 138 can additionally support a surrounding shadow frame ι 48β shadow frame 148 can prevent deposition of the substrate 140 and the edge of the support assembly 138 ' The material 1 40 does not adhere to the support assembly 丨38. „ The upper cover assembly 110 provides the upper boundary of the process space 112. The upper cover assembly • 110 can be removed or opened to repair the process chamber 1 〇 2. In an embodiment, the upper cover assembly 110 can be made of aluminum. The crucible may include an inlet 180, and the process cartridge provided by the gas source 1〇4 may be introduced into the process chamber 1〇2 through the inlet 180. The inlet 18〇10 200821402 may also be coupled to the cleaning source 1 82. The cleaning source 1 82 may A cleaning agent (eg, dissociated fluorine) is provided which can be introduced into the process chamber 1 〇 2 to remove deposition by-products and films from the self-contained process equipment (including the gas distribution plate assembly 11 8). The gas distribution plate assembly 11 8 can be coupled to Inside of the cover assembly 11 0

I 2 0. The gas distribution plate assembly 187 can be configured to conform to the contour of the substrate 1 4 , for example, a polygonal shape for a large-area flat substrate or a solar substrate, and a circular shape for a semiconductor or solar substrate. The gas distribution plate assembly 118 can include a perforated region 116 through which process gas or other gas supplied by the gas source 104 can be delivered to the process space II2. The perforated region 116 of the gas distribution plate assembly 11 8 can be configured to provide a uniform gas distribution into the process chamber 1〇2 through the gas distribution plate assembly 118. </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; It is incorporated by reference in its entirety. The gas distribution plate assembly 11 8 can include a diffuser panel 5 8 that is suspended from the hanger panel 160. Diffuser plate 158 and hanger plate 160 can optionally include a single component. A plurality of gas passages 162 are threaded through the diffuser plate 158 to allow a predetermined gas distribution to pass through the gas distribution plate assembly 118 into the process space 11 2 . The hanging panels 1 60 are maintained in a spaced relationship with the inner surface 1 20 of the upper cover assembly j i ,, so that an inflator 164 is defined therebetween. The plenum 164 may allow gas to flow through the upper cover assembly 11 to be evenly distributed across the width of the diffuser plate 158 such that gas may be uniformly disposed above the central perforated region 116 and uniformly distributed through the gas passage 162. 11 200821402 The diffuser plate 1 5 8 may be made of stainless steel and other RF conductive material. The diffuser plate has a sufficient flatness across the hole 166. In one embodiment, the 9 diffuser plate is about 2. 0 inches between 0 diffusion plate substrate manufacturing. A circular shape, or a polygon (for example, a rectangular shape), an anodic aluminum, a nickel or a 158 thereof may be provided with a thickness to maintain the thickness of the substrate without adversely affecting the substrate. 〖· 〇英158 can be used for semiconductor or solar flat panel display or solar manufacturing

As shown in Figure 1, the controller 186 can engage and control various components of the substrate processing system. The controller 186 can include a central processing unit (cpu) 190, a support circuit 192, and a memory 188. The process gas can enter the process chamber -02 from the gas source 1 〇 4 and exit the process chamber 1 〇 2 by the vacuum pump 184. As will be described below, the non-recirculating process fluorocarbon can be supplied from the gas source 1〇4 through the remote plasma source (not shown) to the process chamber 102. Part of the gas discharged from the process chamber 02 can be The process gas recirculated through at least one particulate supplement/filter and then recycled back to the process chamber can be connected back to the process chamber 102 at the rear of the remote plasma source. The gas includes hydrogen, decane, pH 3 or TMB. The recycling system "Fig. 2" shows an embodiment of the diluent gas recirculation system 2. As seen in "Fig. 2", initially, the process gas can be sourced from a gas source 208. The process chamber 212 is provided through inlet conduits 204, 210. The distal plasma source 202 is disposed along the inlet conduits 204, 210 to ignite the plasma from the distal end of the chamber 212 of the process 12 200821402. By igniting from the process chamber 212 Remote power , The remote plasma generated by the plasma source 202 through the inlet conduit 210 and maintain ό the catheter 210 no deposits.

The process chamber 21 can be evacuated to remove process gases. One or more mechanical fore levels 232 may be provided to evacuate the process chamber 212. One or more boosting devices 218 may be additionally disposed between the process chamber 212 and one or more of the mechanical foreline pumps 232 to facilitate evacuation of the process chamber 212. In an embodiment, the boosting device 218 can be a roots biowe. In another embodiment, the boosting device 218 can be a mechanical pump. In addition, the boosting device 2 18 can be followed by a process. A chamber 226 is disposed behind the chamber 2 1 2 . The chamber pressure gauge 234 is coupled to the process chamber 212 to measure the pressure in the process chamber 21 2 . The chamber throttle width 2 14 is disposed along the outlet conduit 21 6 . And can be coupled to the chamber pressure gauge 234. The pressure measured based on the chamber pressure gauge 234 can adjust the extent to which the chamber throttle valve 214 is opened. By the chamber throttle valve 2 1 4 and the chamber The chamber pressure gauges 234 are coupled together to maintain a predetermined chamber pressure. In one embodiment, the chamber pressure can be from about 0.3 Torr to about 25 Torr. In another embodiment, the chamber pressure can be about 0.3 Torr ~ about 15 Torr. Part of the discharged process gas can be recycled to the process chamber 2 1 2. The discharged process gas system passes through the chamber throttle 214 and the booster along the conduit 2 16 , 220 218 to particulate replenisher/filter 224. The amount of exhaust pressure gauge 222 disposed along conduit 220 can be utilized The process gas pressure in the conduit 220 is measured. The particulate supplement/filter 224 is adapted to capture contaminants present in the process gas being discharged, for example: by-product particulate matter 13 200821402 and possibly from the pump 232, boost The device 218 or other valve reduces the amount of contaminants present in the process gas, and the deposition that may occur in the conduits 226, 210 is reduced. The stop 阙 238 can be placed in the particulate supplement/filter 224 circulation conduit 226 4. The stop 阙 238 can be switched to the closed-type over-microparticle supplement/filter 224 without recycling to the process chamber body. The particulate supplement/filter 224 and the recirculation system can be cleaned to ensure The recirculation system or particulate replenisher/filter can exhibit a blocking phenomenon that reduces the particle replenisher/filter 224 etching gas (eg NFs or F2) compatible material to replace the particle replenisher/filter 224. In one embodiment, the recirculation system and the particulate replenisher/filter 224 may be washed to wash. In the embodiment, an etching gas (eg, NF3 or) is used to clear the system and the particulate replenisher/filter The amount of process gas 5% is further reduced by the recirculation throttle 228 recirculation throttle threshold 228 and combined with the stop valve 238 to determine the amount of process gas to be recirculated and through the conduit 23 前The amount of process gas discharged by the 232. The greater the degree of recirculation throttling, the more process gas is discharged to the mechanical 232. The smaller the degree of opening of the recirculation throttle 228, the more the body is recirculated back. The process chamber 212. The stop valve 236 can be provided with a junction of the conduit 226 and the conduit 21A that guides the process chamber 212 to prevent recirculation as desired. Oil. The recirculation downstream of the chamber 212 will pass the periodicity 224 of the gas through the cycle 224 and may be controlled by ensuring that no water flush is required to be used in another actual recirculation recirculation. When it is opened, it can be recirculated by the process gas of the mechanical pump 228 before the brake, thereby, 14 200821402 轻 轻 入口 入口 入口 入口 入口 ώ ώ 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻 轻The measured pressure controls the opening of the recirculation section 8 at the inlet dust meter 2〇6. The recirculation throttle valve 228 can be lightly coupled to the alpha pressure gauge 2〇6. However, the amount of gas recycled is a function of the pressure measured at the inlet pressure gauge 2〇6. In one embodiment, the measured waste force may be from about 1 Torr (Τ ο r r ) to about 1 〇 、 、. In another embodiment, the pressure measured at the inlet pressure gauge 206 #

About 1 Torr ~ about 2 0 Torr. It is possible to control the desired volume of the inflow into the process chamber 2 1 2. Mass flow rate. Once the desired mass flow rate to the process chamber 212 is determined, the mass flow rate of the fresh, uncirculated process gas can be set and the amount of process gas recycled can be adjusted as a function of the fresh, uncirculated process gas, thereby The combined flow rate of the fresh, uncirculated process gas to the recycled process gas is equal to the desired mass flow rate to the process chamber 2 1 2 . The recirculating process gas is combined with the fresh, non-recycled process gas between the remote plasma source 202 and the process chamber 212. By providing a recirculating process gas behind the remote plasma source 202, the deposition along the inlet conduit 210 can be reduced due to the presence of the recycle process gas. Additionally, the plasma generated by the remote plasma source 202 removes deposits formed within the inlet conduit 210 due to the presence of recycled process gas. Fig. 6 shows another embodiment of the diluent gas recirculation system 600. Process gas system from gas panel 608 is provided to process chamber 61 2 through conduits 604, 610. The plasma of the process gas is ignited in the remote plasma source 602' and the remote electropolymer source 602 is located on the gas panel 608 and process 15 200821402

Between rooms 6 12 . The process chamber 61 can be evacuated by a mechanical front stage pump (not shown). One or more boosting devices 6 18 are disposed between the process chamber 6 1 2 and the mechanical pre-stage pump to assist in evacuation of the process chamber 61. In an embodiment, the boosting device 618 may be a Rogowski blower. In another embodiment, the boosting device 618 can be a mechanical pump. Additionally, boost device 618 can be disposed along conduit 632 behind process chamber 612. The gas from the process chamber 61 can be discharged to the mechanical pre-stage pump through the conduits 6 16 , 620 , 63 6 . An exhaust pressure gauge 622 can measure the pressure within the conduit 620. The chamber pressure gauge 63 8 can measure the pressure in the process chamber 612. The chamber throttle 6 14 can be opened or closed to control the amount of process gas discharged from the process chamber 61. The amount by which the chamber throttle valve 6 14 is opened is a function of the pressure measured by the chamber pressure gauge 63 8 . The chamber pressure gauge 63 8 can be coupled to the chamber throttle 614. In one embodiment, the pressure measured by the chamber pressure gauge 63 8 is from about 0.3 Torr to about 25 Torr. In another embodiment, the pressure measured by the chamber pressure gauge 638 is from about 0.3 Torr to about 15 Torr. Process gases partially discharged from the process chamber 612 can be recycled back to the process chamber 612 via the particulate replenisher/filter 628. The recirculation throttle 624 can control the amount of process gas that is vented to the mechanical foreline pump and how much process gas is recycled to the particulate replenisher/filter 628. The mechanical fore pump draws process gas through the particulate replenisher/filter 628 when the wide 630 is turned off. Process gases that are partially drawn through the particulate replenisher/filter 628 can be vented through the conduit 634 to the mechanical foreline pump, and a portion of the process gas can be recirculated back to the process chamber 612 through the conduit 632. Additional recirculation/isolation valve 626 can be turned on or off and stopped 16

Valve 640 is used to allow or prevent gas recirculation back to process chamber 612. Recirculation throttle 624 can be coupled to an inlet pressure gauge 606 along inlet conduit 604. Inlet pressure gauge 606 measures the pressure of the fresh, non-recycled process gas supplied to the process chamber. Based on the pressure measured at the inlet pressure 606, the amount of recirculation throttle 624 can be controlled. In one embodiment, the pressure measured at the inlet pressure gauge 600 is from about 1 Torr to about 100 Torr. In another embodiment, the pressure measured at the inlet pressure gauge is from about 1 Torr to about 20 Torr. Recirculation throttle valve 624 and inlet pressure gauge 606 can be coupled to each other to produce a mass flow rate of process gas flow to process chamber 612. In one embodiment, the desired mass flow rate of the process gas stream to the process chamber 61 can be determined. Based on the mass flow rate, the flow rate of the fresh, non-recycled process gas can be set to a constant or desired flow rate. The recycled process throughput can then be controlled as a function of the pressure of the fresh, recycled process gas measured at the inlet pressure gauge 606, thereby providing fresh, non-recycled process gas to the process chamber and The combination of the recycle gases is equal to the decision to flow to the process chamber 61 and the desired total process gas mass. Operation The PECVD system described above can be used to deposit a film on a substrate such as a solar material. Such a film may comprise a ruthenium-containing film, such as a p-hetero-ruthenium layer (P-type), an n-type doped yttrium layer (N-type), or an intrinsic ruthenium layer of a structure deposited on a Ρ-Ι-Ν basis (I type). The ruthenium-containing film can be placed on the 612 force meter to open the force system 606 to control, and the mass gas is not added to the 612 input flow plate base type to be considered as 17 200821402 amorphous germanium, microcrystalline germanium or polycrystalline germanium. The operation of the recirculation system will be discussed with reference to Figure 2, but it should be understood that the recirculation system shown in Figure 6 can also be applied. At the initial operation, the recirculation system is not yet operational, and the recirculation throttle 228 is fully open to allow all of the process gas to exit to the mechanical pre-stage pump 232. The fresh process gas system from the gas source 208 is conveyed through the conduit 204. And to the remote plasma source 202. The fresh process gas may include a deposition gas, an inert gas, and a diluent gas such as hydrogen. Gas can be supplied to the remote plasma source 202 through the separate conduit 204 or a single conduit 204. In one embodiment, the deposition gas is pumped directly into the process chamber 212 and the diluent gas and inert gas are simultaneously supplied directly to the remote plasma source 202. The inlet pressure gauge 206 is metered and controlled to supply to the distal end. The amount of fresh process gas from the plasma source 202. After the plasma is ignited in the remote plasma source 2〇2, the process gas continues to enter the process chamber 212 (where the deposition takes place). Once used, the process gas is discharged from the process chamber 212 through conduit 216 by a mechanical pre-stage pump 232. The chamber pressure gauge 234 measures the pressure in the process chamber 212. To maintain proper pressure in the process chamber 212, the chamber throttle valve 214 can be opened or closed based on the pressure measured by the chamber pressure gauge 234. One or more boosting devices 218 can be disposed between the process chamber 212 and the pre-stage pump 232. The used process gas can flow through the particulate replenisher/filter 224 to remove particulate matter from the gas. The recirculation throttle valve 228 can be fully opened to allow all of the process gases exiting the self-contained chamber 212 to be exhausted by the 18 200821402 system after the start of the process. However, @ ’ recycling of the process gas can be initiated as the process progresses and the chamber pressure has been reached. The recirculation throttle valve 228 can be closed all the way. The recirculation throttle 228 is the function of the pressure measured by the inlet pressure gauge 206. When the recirculation throttle valve 228 is closed, it is supplied to the remote plasma source 2〇2 fresh, The non-recycled process gas is correspondingly reduced to ensure that the desired process gas amount is added to the process chamber 212. When the amount of process gas at the inlet pressure gauge a% 2 fresh, non-recycled is reduced, the recirculation valve 228 is closed to ensure that sufficient process gas is recirculated (1) to maintain the desired process chamber pressure. In an embodiment, the:: recycling the throttle 22' such that all of the process gases are recirculated to the process chamber 212 may include a lanane-based gas and hydrogen. Examples of the decane-based gas are not limited to mono(SiH4), money (Si2H6), tetra-gas fossil "lCl4), and m (SiH2Cl2). The ratio of the gas to the rolling can be maintained to control the reaction of the gas mixture to obtain the desired crystal ratio. For an essential single crystal dream, the amount of crystallization is between about 2% and about two. In one embodiment, the ratio of decane-based gas to hydrogen is between about 20 Å and about i: 2 Torr. In another embodiment, the ratio is between about ～about 1,120. In yet another embodiment, the ratio V is, approximately 1:100. Xe can provide an inert gas to the process chamber 212. The inert gas includes Ar, He, ', and the ratio of the flow rate of the gas to the hydrogen gas is about 1: 1 〇 ~ about 2 : 1 〇 19 200821402 Before the deposition of the essential microcrystalline layer, the above decane system can be utilized. The gas and hydrogen are used to deposit a thin seed layer of an intrinsic microcrystalline crucible. The gas mixture has a ratio of decane-based gas to hydrogen of from about 1:100 to about 1: .2 0000. In an embodiment, the ratio may be from about 1:200 to about 1:1000. In another embodiment, the ratio is about 1:500. Particle supplement / filter

Fig. 3 is a schematic diagram showing an embodiment of the microparticle supplement/filter 300. The particulate replenisher/filter 300 includes a housing 302 having an inner side space in communication with the gas inlet 310 and the gas outlet 312, and a filter matrix 310 combined in the housing 302. The outer casing 3 02 can be made of aluminum or other compatible materials. In one embodiment, the outer casing 302 includes stainless steel. The assembly of the filter matrix 304 in the outer casing 302 distinguishes its inner space into an inner space 320 substantially surrounded by the filter matrix 304, and an outer space 3 18 substantially surrounding the inner space 320. As indicated by the direction 314 of the gas flow, the process gas passes through the gas inlet 310 into the outer casing 302 and flows from the outer space 3 1 8 through the filter matrix 404 to the inner space 3 20 and then exits the particulate replenisher through the gas outlet 312 / Filter 300. The filter matrix 304 can be made of nickel, stainless steel or other compatible metal alloy, and it can be cleaned with a plasma such as a fluorine-based purge gas or a combination thereof. In one embodiment, the filter matrix 304 comprises stainless steel. The filter matrix 304 can have an open area of from about 20% to about 30%. In one embodiment, the purge gas comprises SF6, NF3 or F2. The filter matrix 304 is provided with perforations 306, and the perforations 306 have appropriate 20 200821402

Dimensions to allow process gas stream 314 to flow from outer space 318 into interior space 320 and block the passage of particulate matter in the process gas. In one embodiment, the filter matrix 304 is provided with a gas permeable membrane that allows a particular gas to pass through the matrix while passing through the matrix. The size of the particulate matter captured is dependent upon the configuration of the perforations 306, and in an embodiment the area is about 1 micron. Again, one side of the filter matrix 304 includes a heat exchange I 308 that is attached to the transition matrix 304 by diffusion bonding or welding. In one embodiment, the heat exchange ring 3〇8 can be made of the same material as the transition group f 304. The cooling or heating fluid supplied by external source 316 can be circulated to control the temperature profile of filter matrix 3〇4. More specifically, a coolant such as water or other suitable cooling fluid may flow through the heat exchange annulus 308 when the particulate supplement/filter 3 is operating in a filtration mode. When the process gas flows through the cooled filter substrate 3〇4, the particulate matter is effectively captured, and the pump oil vapor in the process gas can be condensed and captured on the surface of the filter substrate 304. As shown in "Fig. 3", one embodiment of the particulate replenisher/filter 3 can have a filtration matrix 304 that can be cooled by a heat exchange ring 〇3〇8 for capture from recirculation. Process gas pollutants. More particularly, the oily material present in the recirculating process gas in a vapor state can thereby be condensed and captured by the cooled filtration substrate 304. In order to clean the particulate replenisher/filter 300, an electric paddle or a purge gas system comprising SF6, NFS or F2 flows from the gas inlet 31 into the outer casing 3〇2 to be accumulated in the outer casing 302 and on the filter substrate 304. the remains. As the plasma and purge gas flows through the particulate replenisher/filter 3, the heating fluid 21 200821402 can be circulated through the heat exchange loop 3 0 8 to raise the temperature of the filtration matrix 404. Some of the residue (such as condensed oil and hexafluoroammonium) is trapped in the microparticle supplement/filter 3 , , so it can be selectively removed by evaporation and sublimation. In one embodiment, the plasma and cleaning gas can be "FIG. 2"

The distal plasma source 202 and the gas panel 208 are produced. Thereby, the particulate replenisher/filter 224 can be conveniently cleaned as the plasma and purge gas flow downstream through the recirculation system. The particulate supplement/filter 224 can therefore be periodically cleaned without the need to replace the filter element. Fig. 4 shows another embodiment of the microparticle supplement/filter 400. As with the embodiment shown in FIG. 3, the microparticle supplement/filter 400 includes a housing 402, a filter matrix 404 having perforations 406, and a heat exchange loop 408 coupled to an external source 416, wherein the filter matrix 404 The inner space of the outer casing 402 is divided into an inner space 4 1 8 and a surrounding outer space 420. The particle replenisher/filter 400 differs from the embodiment of Fig. 3 in that the internal space 418 is in communication with the gas inlet 4 10 and the external space 420 is in communication with the gas outlet 412. As indicated by the direction of flow 414, the process gas passes through the gas inlet 410 into the outer casing 402 and flows from the interior space 418 through the filter matrix 404 into the outer space 420, which in turn exits the particulate supplement/filter 400 through the gas outlet 412. . One side of the filter matrix 404 includes a heat exchange loop 408 that is attached to the filter matrix 304 by diffusion bonding or welding. In one embodiment, the heat exchange loop 408 can be made of the same material as the filter matrix 404. Figure 5 shows another implementation of the particle supplement/filter 500 22 200821402

example. The particulate replenisher/filter 500 includes a housing 502 having an inner space in communication with a gas inlet 5 10 and a gas outlet 5 1 2 . Housing 502 is shown open and transparent for clear reference. The inner space of the outer casing 502 combines a plurality of particulate applicators/filter units 504. The structure of each of the particle replenisher/filter unit 504 is similar to the particle replenisher/filter 300 of "Fig. 3" or the particle replenisher/filter 400 of "Fig. 4". The gas stream enters the outer casing 502 through the gas inlet 510 and flows through the respective particulate accumulator/filter unit 504 to exit from the gas outlet 5 1 2 . The heat exchange loops in each particulate supplement/filter unit 504 can be attached to the filter matrix by diffusion bonding or welding. In one embodiment, the heat exchange loop can be made of the same material as the filter matrix. In order to ensure that the process chamber and the recirculation system operate in an efficient manner, the cleaning operation can be performed periodically between each deposition operation. The cleaning operation will be described below with reference to "2nd to 3rd drawings", but it should be understood that it can also be applied to the system shown in Figure 4. At the beginning of the cleaning operation, the shutdown is stopped 23 8 and the recirculation flow 228 is opened. Gas source 208 then supplies purge gas, including SF6, NF3 or F2, which flows along conduit 204 to remote plasma source 202, while the plasma is ignited at remote plasma source 202. The purge gas then flows through process chamber 212, along conduits 216, 220 to particulate replenisher/filter 224, and is ultimately discharged along conduit 230 for derating. As shown in "Fig. 3", when the cleaning gas passes through the particulate replenisher/filter 300, the filtration matrix 304 in the particulate replenisher/filter 300 can also be passed along the heat exchange ring by heating the fluid. The road is heated by the cycle of 3000. Therefore 23 200821402 The residue accumulated in the particle replenisher / a dry / passer 300 can be easily removed by the combination of engraving, evaporation and sublimation and 1 σ. By

It should be understood that the above-mentioned single conduit of the present process gas, but also contains one or more process gases, and the force meter 'co-coupled to the recirculating gas can be uniquely separated and separated in another embodiment, the deposition gas The Ming system has a plurality of conduits that can be used from a source of gas, wherein each conduit has its own inlet-port flow valve. In one embodiment, a dilute conduit directly into the distal plasma source may be provided by a gas source through its unique conduit and will not pass through the remote plasma source. In yet another implementation, the % process gas system is directly pumped into the process chamber rather than being combined with fresh, non-recycled gas at a location between the remote plasma source and the process chamber.

By recycling the process gas, the amount of fresh, non-reposted process gas can be reduced. By using less fresh, non-recycled gas, the cost of depositing a layer on the substrate by PECVD can be reduced because of the lower cost of fresh, non-recycled process gases. Therefore, P E C V D can be performed in an efficient manner by recycling the discharged process gas. In addition, since the above-described recirculation system is fully compatible with periodic cleaning, its operation can be maintained at an optimum cost. However, the present invention has been described above with reference to the preferred embodiments thereof, and it is not intended to be construed as the invention, and the skilled person skilled in the art should still be in the technical scope of the present invention without departing from the scope of the invention.钕 压 压 〇 〇 〇 24 24 24 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 As shown in the figure. It is to be understood that the specific embodiments of the invention are not to be construed as limiting the scope of the invention. .

1 is a cross-sectional view of a PECVD chamber 100, which may be used in conjunction with one or more embodiments of the present invention; and FIG. 2 is a schematic diagram of a diluent gas recirculation system 200 in accordance with an embodiment of the present invention. FIG. 3 is a schematic view showing a microparticle supplement/filter 300 according to an embodiment of the present invention; and FIG. 4 is a view showing a microparticle replenisher according to another embodiment of the present invention. A schematic diagram of a filter 400; FIG. 5 is a schematic diagram of a particulate replenisher/filter 500 according to another embodiment of the present invention; and FIG. 6 is a diagram showing another dilution gas recirculation system 600 A diagram of an embodiment. For the sake of understanding, the same component symbols in the drawings represent the same elements. The components employed in one embodiment may be applied to other embodiments without particular detail. [Main component symbol description] 100 System 102 Process chamber 25 200821402

104 Gas Source 106 Wall 108 Bottom 110 Upper Cover Assembly 112 Process Space 116 Perforated Area 118 Distribution Plate Assembly 120 Inner/Inner Surface 122 Power Source 124 Body 126 Lower Side 132 Heater 134 Upper Side 138 Support Assembly 140 Substrate 142 Axle 146 Ripple Tube 148 Shadow Frame 158 Diffuser Plate 160 Hanging Plate 162 Gas Channel 164 Inflator 166 Hole 174 Power 180 Entrance 182 Cleaning Source 184 Vacuum Pump 186 Controller 188 Memory 190 CPU/CPU 192 Support Circuit 200 System 202 Remote Plasma source 204, 210 conduit 206 pressure gauge 208 gas source / gas panel 212 process chamber 214 throttle width 216 conduit 218 booster 220 conduit 222 pressure gauge 224 particulate supplement / filter 226 conduit 228 _ rogue 230 conduit 232 front Level pump 234 pressure gauge 26 200821402

23 6 Stop valve 23 8 Stop valve 3 00 Particles accumulator/filter 302 Housing 3 04 Filter matrix 306 Perforation 308 Loop 310 Inlet 312 Outlet 314 Airflow direction / Gas flow 316 External source 318 External space 320 Internal space 400 Particles Collector/Filter 402 Housing 404 Filter Substrate 406 Perforation 408 Loop 410 Entrance 412 Outlet 414 Airflow Direction 416 External Source 418 Internal Space 42 0 External Space 500 Particle Replenisher/Filter 502 Enclosure 504 Early 510 Entrance 512 Exit 60 0 System 602 Far-end plasma source 604, 610 conduit 606 pressure gauge 608 gas panel 612 process chamber 614 chamber throttle valve 616 conduit 618 booster 620 conduit 622 pressure gauge 624 throttle 626 recirculation / isolation 阙 628 particle complement / filter 630 stop 阙 632 conduit 634 conduit 636 conduit 63 8 pressure gauge 27 200821402 640 stop valve

28

Claims (1)

200821402 X. Patent Application Park: 1. A particulate replenisher/filter assembly comprising: a particulate replenisher/filter body having an inlet and an outlet adapted to be coupled to a chamber outlet The outlet is adapted to be coupled to a chamber inlet; a filter matrix disposed in the body between the inlet and the outlet; A heat exchange loop is coupled to the filter matrix. 2. The e-mail of claim 1, wherein the main body comprises a first space separated from a second space by the filter matrix, wherein the first space at least partially surrounds the second space . 3. The assembly of claim 1, wherein the filter matrix is made of a material selected from the group consisting of nickel, stainless steel, and mixtures thereof. 4. The assembly of claim 1 wherein the heat exchange loop is coupled to the filter substrate by diffusion bonding or welding. 5 a plasma-assisted chemical vapor deposition apparatus comprising: a gas source; a process chamber having a chamber outlet and a chamber inlet; and 29 200821402 a recirculation system comprising, as claimed in claim 1 The particulate replenisher/filter assembly is described. 6. The apparatus of claim 5, wherein the recirculation system comprises a plurality of particulate replenisher/filter assemblies. 7. A plasma assisted chemical vapor deposition method comprising: Providing a fresh, non-recycled process gas to a plasma-assisted chemical vapor deposition chamber, the deposition chamber having a chamber inlet and a chamber outlet; performing a plasma-assisted chemical vapor deposition process; Discharging from the deposition chamber; flowing the discharged process gas through a particulate replenisher/filter assembly, the assembly comprising: a particulate replenisher/filter body having an inlet coupled to the chamber outlet and An outlet coupled to the inlet of the chamber; a filter matrix disposed in the body between the inlet and the outlet; and a heat exchange loop coupled to the filter matrix; and at least a portion The vented process gas is recycled back to the deposition chamber. 8. The method of claim 7, further comprising controlling the temperature of the component as the vented process gas flows through the assembly. 9. The method of claim 7, further comprising: 30 200821402 flowing a cleaning gas into the deposition chamber; discharging the cleaning gas from the deposition chamber; flowing the discharged cleaning gas through the assembly; And recycling at least a portion of the vented purge gas back to the deposition chamber. 1 (K) A plasma-assisted chemical vapor deposition method comprising: φ providing a fresh, non-recycled process gas to a plasma-assisted chemical vapor deposition chamber, the process gas comprising a diluent gas and a deposition gas; a plasma assisted chemical vapor deposition process; discharging the process gas from the deposition chamber; and recycling at least a portion of the process gas through a gas reconditioning hardware, the apparatus including at least one item, The project is selected from the group consisting of a particulate supplement, a particulate filter, and combinations thereof. 11. The method of claim 10, wherein the recycled process gas system is combined with the fresh, non-recycled process gas at a location between the deposition chamber and a remote plasma source. . 12. The method of claim 10, wherein the deposition chamber comprises an inlet caliper and a recirculation throttle, the method further comprising: maintaining the fresh, non-recycled process gas flow to the deposition a 31 of 200821402, a desired mass flow rate; and a quantity of gas discharged through the recirculation section, the amount of gas discharged is measured by the inlet pressure gauge a function of pressure. The method of claim 10, wherein the deposition chamber comprises a chamber pressure gauge and a chamber throttle valve, the method further comprising: ^ controlling the throttling of the chamber through the chamber The amount of gas is maintained to maintain a constant chamber pressure as a function of the pressure measured at the chamber pressure gauge. 1 4. A plasma-assisted chemical vapor deposition method comprising: providing a fresh, non-recycled process gas to a plasma-assisted chemical vapor deposition chamber, the process gas comprising at least hydrogen and decane; performing a plasma assist Chemical vapor deposition process; Discharging the process gas from the deposition chamber; and recycling at least a portion of the process gas through a gas reconditioning apparatus, the apparatus including at least one item selected from the group consisting of a particulate supplement, a particulate filter, and A group of its combination. 15. The method of claim 14, wherein the deposition chamber comprises an inlet pressure gauge and a recirculation throttle valve, the method further comprising: maintaining the fresh, non-recycled process gas flow to the distal end a desired mass flow rate of the plasma source 32 200821402; and controlling the amount of gas discharged through the recirculation throttle, the amount of gas discharged being a function of the pressure of the process gas measured at the inlet pressure gauge . 16. The method of claim 14, wherein the deposition chamber comprises a chamber pressure gauge and a chamber throttle valve, the method further comprising: The amount of gas exhausted through the chamber throttling is controlled to maintain a desired chamber pressure as a function of the pressure measured at the chamber pressure gauge. 17. A plasma-assisted chemical vapor deposition apparatus comprising: a chamber; a process gas source coupled to the chamber; a first pressure gauge coupled to the process gas source and the chamber It a chamber exhaust system coupled to the chamber, the exhaust system comprising: at least one exhaust conduit coupled to the chamber; a particulate filter along the at least one exhaust conduit Coupling; a particulate filter exhaust conduit coupled to the particulate filter and the chamber; and at least a throttle valve coupled to the particulate filter exhaust conduit and to the first pressure gauge Electrically coupled. The device of claim 17, further comprising: a remote plasma source coupled between the process gas source and the chamber. 19. The apparatus of claim 18, wherein the particulate filter exhaust conduit is coupled to the chamber at a location between the chamber and the distal plasma source. 20. The apparatus of claim 17, further comprising: a chamber pressure gauge coupled to the chamber; and a chamber throttle coupled to the particulate filter a position between the chambers and electrically coupled to the chamber pressure gauge. 2 1. A plasma-assisted chemical vapor deposition equipment, including: a process gas source coupled to the chamber; a first pressure gauge coupled between the process gas source and the chamber; and a chamber exhaust system coupled to the chamber The exhaust system includes: at least one exhaust conduit coupled to the chamber; at least a throttle valve electrically coupled to the first pressure gauge along the at least one exhaust conduit; 34 200821402 a particulate filter coupled between the chamber and the at least one flow channel along the at least one exhaust conduit; and a particulate filter exhaust conduit coupled to the particulate filter and the chamber . 22. The apparatus of claim 21, further comprising a distal plasma source coupled between the chamber and the source of the process gas, wherein the particulate filter exhaust conduit is attached to the chamber A chamber between the chamber and the remote plasma source is coupled to the chamber. 23. The apparatus of claim 2, further comprising: a chamber pressure gauge coupled to the chamber; and a chamber throttle coupled to the particulate filter A position between the chambers and electrically coupled to the chamber pressure gauge. 24. The apparatus of claim 21, further comprising a recirculation width coupled between the particulate filter and the chamber. 25. A plasma assisted chemical vapor deposition apparatus comprising: a chamber; a process gas source coupled to the chamber; and a recirculation system capable of discharging a process gas from the chamber The amount is recycled back to the chamber, the recycled process gas amount being a function of the fresh process gas supplied to the chamber by the process gas source of 35 200821402 to ensure that the chamber is provided with a desired amount of process gas. The system includes: one or more boosting devices; one or more mechanical pumps; and a wide, coupled between the one or more boosting devices and the one or more mechanical pumps, Wherein the helium controls the amount of gas that is circulated to the chamber and the amount of gas that is removed from the apparatus. 36