TW200828621A - Method for manufacturing light-emitting diode - Google Patents

Abstract

A method for manufacturing a light-emitting diode (LED) is described, comprising: providing a growth substrate; forming a first light-emitting diode on the growth substrate, wherein the step of forming the first light-emitting diode comprises forming a first buffer layer on the growth substrate, forming a first illuminant epitaxial structure on the first buffer layer, forming a first metal substrate on the first illuminant epitaxial structure, and stripping the growth substrate to expose the first illuminant epitaxial structure; performing a cleaning step on the growth substrate; and forming a second light-emitting diode on the growth substrate.

Description

200828621 IX. Description of the Invention [Technical Field] The present invention relates to a method of manufacturing a light-emitting diode (LED), and more particularly to a method of manufacturing a light-emitting diode having a reusable growth substrate . [Prior Art] A general metal substrate nitride (Ill-Nitride) light-emitting diode is formed by a plurality of epitaxial growth on a growth substrate composed of sapphire or a semiconductor, and then a bonding epitaxial structure is used. Bonding to the metal substrate', the growth substrate is stripped from the light-emitting amorphous structure to complete the fabrication of the light-emitting diode. In the process of fabricating a metal substrate nitride light-emitting diode, the growth substrate can no longer be used after the growth substrate of the light-emitting diode epitaxial wafer is removed. As a result, in the process of the metal substrate light-emitting diode, a large amount of the grown substrate is one of the important factors that cannot be reduced in the mass production of the metal substrate light-emitting diode product. Therefore, it will result in waste of resources and a large amount of waste, which is inconsistent with economic benefits and environmental protection needs. SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a method for fabricating a light-emitting diode that cleans a substrate grown from a remote crystal domain by dry, wet, or a combination of dry and wet etching. After cleaning, the substrate can be recycled for use in the growth of the next-stack structure. Therefore, the consumption of the 200828621 growth substrate can be saved, and the environmental protection and cost reduction can be greatly improved, and the economic benefit can be greatly improved. According to the above object of the present invention, a method for fabricating a light emitting diode includes at least providing a growth substrate, and forming a first light emitting diode on the growth substrate, wherein the step of forming the first light emitting diode is at least Forming a first buffer layer on the growth substrate; forming a first light-emitting epitaxial structure on the first buffer layer; forming a first metal substrate on the first light-emitting epitaxial structure; and stripping growth a substrate for exposing the first luminescent epitaxial structure, performing a cleaning step on the grown substrate, and forming a second luminescent diode on the grown substrate. According to a preferred embodiment of the present invention, the dry etching method, the wet etching method, the mechanical polishing method or the high temperature baking method may be employed in the above cleaning step. [Embodiment] In order to make the description of the present invention more detailed and complete, reference is made to the following description in conjunction with the drawings of Figs. 1 to 5. Referring to Figures i through 3, a cross-sectional view of a m: body process in accordance with the present invention is illustrated. First, the growth substrate 100 is provided. The material of the growth substrate 100 may be, for example, sapphire, indium arsenide or gallium phosphide. Then, a light-emitting diode is produced on the growth (10). System: In the case of a light-emitting diode, first, for example, by low-temperature epitaxy, a buffer is formed on the surface of the growth substrate H), wherein the buffer layer is 〇2 or galvanized. Next, using, for example, an organometallic vapor deposition method, a liquid phase epitaxy method, or a molecular beam epitaxy method to grow the luminescent ray on the buffered 丨〇 曰 9 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 2008 The method includes sequentially stacking the upper semiconductor layer 104, the first electrical limiting layer: the first electrical limiting layer 11 and the second electrical contact layer, the second electrical property and the second electrical property are Different electrical properties. When the first electrical property is Ν-di-electricity is Ρ-type; and when the first electrical property is Ρ-type, the second electrical property- is Ν-type. In the present exemplary embodiment, the 'first electrical property is a Ν type, and the second electrical property is Ρ. In an embodiment, the material of the first electrical semiconductor layer may be, for example, nitrided; OSd, osg u, the ancestor of the first layer 10 偈 丨, U UAlx〇a, yIni.yN;0,x" —=1,〇Sy$i], the active layer 1〇8 may be a double 昱=, ,= structure or multiple quantum well structure, and the material of the active layer 1G8 may include, for example, a mouse chain Gallium indium [(AlxGai.x) yIni_yN; egl ^ 013, the second electrical property = the material of the confinement layer 11G may be, for example, a gallium nitride indium [(AlxGai x) yin 〇 and a materialization of the second electrical contact layer 112 Ming gallium indium UAUGUySLkded]. For the disorder, the metal substrate 12G' may be formed directly on the second electrical contact layer 112 of the luminescent epitaxial structure or the luminescent crystal structure may be selectively processed, for example, a pattern of a sinusoidal luminescent epitaxial structure. And/or additional structural layers are formed on the second electrical reflector 112, such as: an electrode and a metal reflective layer. In the exemplary embodiment, the luminescent epitaxial structure is first patterned by using, for example, a micro-destruction f or a dicing technique to remove: a second electrical contact layer 112, a portion of the second electrical limiting layer 11 The trenches 122 are formed in the luminescent epitaxial layer, wherein the trenches expose a portion of the first electrical semiconductor layer 200828621 1〇4. When the trench 122 is formed in the luminescent epitaxial structure, the wet etching method or the mechanical cutting polishing method can be used. Then, the method of forming a dielectric protective layer 118 over the side of the trench 122 == the portion of the luminescent epitaxial structure exposed by the mold wood 122. i The material of the electrical protection layer 118 may be a high dielectric organic material, a cut oxygen or a nitride, such as a dioxate or a nitrogen (four). Subtracting, reusing, for example, thermal evaporation (The_l Evap〇ra = eam Eva_iGn) or ion splash utt = electric cover on the second electrical contact layer (1) to: =: tin, yttrium oxide, oxidation: The material of =, : can be, for example, indium oxide or magnesium. Subsequently, a metal reflective layer 116 is formed over the second electrically transparent electrode 114Ji to illuminate the liver active layer 1 〇 8 toward the metal in the direction of = Π6. The layer is first reflected, wherein the material of the metal reflective layer 116 can be made of aluminum, silver, platinum, chromium, nickel or an alloy of these metals. Then, the c=forming metal substrate 12G covers the morning/part of the dielectric protective layer. The exposed portion of 114 and the metal reflective layer 116 are all: the plate cutter 120 纟 fills the trench 122 to form the structure as shown in Fig. 1. Ϊ = the material may be, for example, steel, tantalum, nickel, gold, silver, uranium, Ming or alloy of these metals. To be a metal substrate 〗 2 Ω 制 秘 & . . . 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热 加热Peeling. When the combination is [^〇0 separated from the luminescent crystal structure, part of the buffer layer 102 曰$ ' and the other part of the buffer _ 102 may remain on the surface of the growth substrate 8 200828621 board 100, such as 102a. The substrate 100 will be grown as an electrical semiconductor layer 104. After the buffer layer on the growth substrate 100 is stripped, the first electric charge of the luminescent epitaxial structure is exposed ==100 stripping, and the first electric (four) is formed by, for example, deposition to cover the exposed first electric semiconductor 1104. on,

The first electrical electrode 124; bf is also ’, T? 枓 can be, for example, a conductive metal oxide, or can be titanium, aluminum, gold or an alloy of these metals. Then, the first electrical electrode pad 126 is formed in the portion _ / 儿

电, 丨 苐 苐 电 an electric electrode 124 F = the production of the light-emitting diode 128. The material of the first-electrode electrode pad 126 may be, for example, titanium, inscription, gold or an alloy of these metals. pad

Referring to FIG. 4 and FIG. 5 'the green color is removed according to the cleaning process profile I of the growth substrate of the present embodiment, after the growth substrate 100 is removed, the buffer layer l remains on the growth substrate 1〇〇. 2a and other pollution 4 do not. At this time, it is possible to: perform a cleaning step to remove the residual substrate 1 " soil, 100 102a and other contaminants' to make the grown substrate 1 ;; ^ When growing the substrate Η) (), dry heart engraving, engraving, mechanical grinding or high temperature baking can be used. When using the dry engraving method, use reactive ion (four) technology (RIE) or induction light (4) technology (ICP). In an example of a dry etching process, the growth substrate 1GG can be cleaned with > / X , τ . When the wet type (four) method is used, the growth substrate i (10) is cleaned by using the = series of pores of potassium oxide as the liquid. Polishing pads and polishing fluids are available for nitric acid or hydrogen. When the high temperature chess baking method is used, the residue remaining on the growth substrate 100 is tempered, for example, a buffer layer: a 200828621 with some contaminants, and the residue after the cleavage is removed. After cleaning, the substrate 100 can be recycled for use as shown in Fig. 5, and the next light-emitting diode can be fabricated thereon. According to the preferred embodiment of the present invention, one of the advantages of the present invention is that the manufacturing method of the light-emitting diode of the present invention is cleaned and self-expanded by means of dry, wet, bite, dry and wet etching. A structurally exfoliated growth substrate. The cleaned growth substrate can be recycled for use in the growth of the next stupid structure. Therefore, the consumption of the growth substrate can be saved, and the environment can be environmentally friendly and the cost can be reduced, which can greatly improve the economic efficiency. Although the present invention has been described above in terms of a preferred embodiment, it is not intended to limit the invention, and it is intended that various modifications may be made without departing from the spirit and scope of the invention. And the scope of the present invention is defined by the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 through Fig. 3 are cross-sectional views showing a process of a preferred light emitting diode in accordance with the present invention. 4 to 5 are cross-sectional views showing a cleaning process of a growth substrate in accordance with a preferred embodiment of the present invention. [Description of main component symbols] 100 · Growth substrate 102 : Buffer layer 1 () 4: First electrical semiconductor layer • First—Electrical confinement layer 108: Active layer 200828621 110 : Second electrical confinement layer 112 114 : Second Electrically transparent electrode 116 118 : dielectric protective layer 120 122 : trench 124 126 : first electrical electrode pad 128 second electrical contact layer metal reflective layer metal substrate first electrical electrode light emitting diode 11

Claims (1)

200828621 十:,··.····························································································· The first light emitting diode is formed on the growth substrate, and the step of forming the first light emitting diode comprises: forming a first buffer layer on the growth substrate; (, forming a first light emitting epitaxial structure Forming a first metal substrate on the first light emitting epitaxial structure; and peeling off the growth substrate to expose the first light emitting epitaxial structure; performing a cleaning step on the grown substrate And forming a second light-emitting diode on the growth substrate. The method of manufacturing the light-emitting diode according to claim 1, wherein the material of the growth substrate is sapphire, gallium arsenide, phosphorus Indium or phosphorus (,: gallium galvanic. The manufacturing method of the light-emitting diode according to claim 1 wherein the material of the first buffer layer is aluminum nitride or gallium nitride. ·If you apply for the scope of patent application The method for manufacturing the light-emitting diode described in the step of forming the first buffer layer is a low temperature epitaxial method. 12 200828621 A method for manufacturing a light-emitting diode according to claim 1 of the patent application The step of the first luminescent epitaxial structure is performed by an organometallic vapor deposition stray method, a liquid phase stupid crystal method or a molecular beam stray crystal method. 6. The luminescent diode according to claim 1 The method for manufacturing a body, wherein the first light emitting epitaxial structure comprises at least one of a first electrical semiconductor layer, a first electrical confinement layer, an active layer, and a second electric layer sequentially stacked on the first buffer layer a limiting layer and a second electrical contact layer, and the first electrical property f and the second electrical property are different electrical properties. 7. The method and method for emitting the light-emitting diode according to claim 6 of the patent application scope, Wherein the material of the first electrical semiconductor layer is aluminum gallium nitride indium^AlxGai-x)yIni.yN; 19 yS Π ^ The material of the first electrical localization layer is aluminum gallium indium nitride [(AlxGaKx) yini yN ; 15 〇&lt; yS Π ^ ^ The active layer has a double heterostructure or 〆 weight a sub-well structure, and the material of the active layer comprises aluminum gallium indium nitride [(AlxGabx)yIni-yN 1]; '- a material of the second electrical confinement layer is aluminum gallium indium nitride [(AlxGabx) Yini ; 0$ 1, 〇 ' 1]; and the material that violates the second electrical contact layer is nitrided indium gallium [(AUGabdyih yN ; 〇 ' l 1]. 13 200828621 law, 8: ” please patent scope item The manufacturing method of the light emitting diode; the step of forming the first light emitting crystal structure and the step of forming the first metal metal plate further comprise: - a base group - forming a trench in the first light emitting bar In the crystal structure, a portion of the electrical semiconductor layer is exposed; and a dielectric protective layer is overlaid on the sidewalls and the bottom surface of the trench. The manufacturing method of the light-emitting diode described in the § § § § § § § § § § § § § 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 1 〇 如 凊 凊 凊 凊 凊 凊 凊 凊 凊 发光 发光 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中 其中A group of electric organic materials. (1) The method for producing a light-emitting diode according to the eighth aspect of the invention, wherein the material of the dielectric protective layer is germanium dioxide or tantalum nitride. Between the step of forming the dielectric protective layer and the step of forming the first metal substrate, the method further comprises forming a second electrically transparent electrode in the second electrical contact. 14 1 3 · The manufacturer of the light-emitting diode according to the patent application No. 12 2 2008 286:: The material of the second electrically transparent electrode is selected from indium tin oxide, chyle a group consisting of indium, emulsified tin, zinc oxide, and magnesium oxide. The step of forming the second electrically transparent electrode by the light-emitting diode method described in claim 12 of the Japanese Patent Publication No. 12 is: : between the steps 'more at least includes forming - a metal reflective layer on the first transparent electrode. #电&amp; The method of manufacturing a light-emitting diode according to claim 14 wherein the material of the metal reflective layer is selected from the group consisting of gold, aluminum, silver chromium, nickel and alloys thereof. One group. 16. The method of claim 14, wherein the first electrically limited layer is of the type. The manufacturing method of the light-emitting diode according to the item, wherein the first electrical limiting layer is ρ 17. The light-emitting two method according to claim 16 of the patent application, wherein the first light-dead card is formed. After the step of growing the substrate by a square, a force-free electrode is formed on the exposed surface of the t ^ _ electrical semiconductor layer and a 亥 之 之 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Then m is on an electric electrode. </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; One group 19·such as the scope of the patent application, the 17th Gans is poor; the light-emitting diode is made by the ancient law, in which the younger one is the electrical electrode material, and the clothing is the conductive Metal oxide. , 二〇·中如//Special: The manufacturer of the light-emitting diode described in the scope of item 17 The material of the amphoteric electrode is selected from = Γ I; a group of alloys thereof. ^ To and 21. The fj ancient product method of the light-emitting diode as described in the patent application scope q, . The step of the board is an electroplating method or a sinking method. The method of stacking the light-emitting diode according to the first aspect of the patent application, wherein the first metal substrate is made of a clothing and a square material. The lanthanide is selected from the group consisting of copper, molybdenum, nickel, total, silver, turn, and alloys thereof. Recording gold 23. The light-emitting diode according to the item 1 of the patent application is as follows: The step of stripping the grown substrate utilizes: a difference between the two thermal stresses. ^成成:3⁄4 Addition Patent Range 制造1 The manufacturing method of the light-emitting diode The first rib step is a dry (four) method, a wet (four) method, a mechanical grinding method or a high temperature baking method. The method of manufacturing a light-emitting diode according to claim 24, wherein the dry etching method is a reactive ion etching technique (RIE) or an inductively coupled plasma ion etching technique (ICP). 26. The method of manufacturing a light-emitting diode according to claim 24, wherein the far-dry etching method uses a chlorine gas. The method of producing a light-emitting diode according to claim 24, wherein the wet etching method uses hot nitric acid or potassium hydroxide. The method of producing a light-emitting diode according to claim 24, wherein the mechanical polishing method uses a polishing pad and a polishing liquid. The method of producing a light-emitting diode according to claim 24, wherein the high-temperature baking method uses high temperature to crack the residue remaining on the growth substrate. The method for manufacturing a light-emitting diode includes at least: providing a growth substrate; forming a first light-emitting diode on the growth substrate, wherein the step of forming the first light-emitting diode comprises at least: forming A first buffer layer is disposed on the growth substrate; and a first light emitting epitaxial structure is formed on the first buffer layer, wherein the first light emitting epitaxial structure in the layer 2008 200828621 includes at least sequentially stacking the first light emitting epitaxial structure. a first-electric semiconductor layer, a first-electron (four) moving layer, a second electrical localized layer, and a second electrical (four) layer = one electrical and a second electrical property are different electrical properties; a trench is exposed in the first luminescent epitaxial structure to expose the first electrical semiconductor layer; a dielectric protective layer is formed on the sidewall and the bottom surface of the trench; and a second electrically transparent electrode is formed on the trench Forming a metal reflective layer on the second electrically transparent electrode; forming a first metal substrate on the metal reflective layer; and peeling off the germanium growth substrate to expose the first An electric semiconductor layer: performing a cleaning step on the grown substrate; and forming a second light emitting diode on the growth substrate. The method of manufacturing the light-emitting diode according to the third aspect of the invention, wherein the material of the growth substrate is sapphire, gallium arsenide, indium phosphide or gallium phosphide. 32. The method of manufacturing a light-emitting diode according to the third aspect of the invention, wherein the material of the first buffer layer is aluminum nitride or gallium nitride. 33. A method of producing a light-emitting diode according to the third aspect of the invention, wherein the step of forming the first buffer layer utilizes a low temperature epitaxy method. 18 200828621 34. The method for forming the first luminescent epitaxial structure in the fabrication of the luminescent diode according to the third aspect of the patent application is based on an organic metal mouse phase method. Liquid phase epitaxy or one molecule beam epitaxy. The manufacturing method of the light-emitting diode according to claim 30, wherein the material of the first electrical semiconductor layer is aluminum gallium indium arsenide [(AlxGai, x) yIni-yN; 0$ 1, 〇 $ 1]; The material of the electrical layer of the hainan is aluminum gallium nitride indium ^ xGaKx) yIn1.yN; l5 1]; layer 4 active layer a double heterostructure or a multiple quantum well structure And the material of the active crucible comprises aluminum gallium indium nitride [(AlxGa Bu Oylni-yN; 0$x$l, 〇$y$ 1 ], and the material of the second electrically limited layer is aluminum gallium indium nitride (AlxGai λ τ 'τ ; 〇 $ i, l]; and ~ 苐 two electrical contact layer material is aluminum gallium nitride indium t (AlxGai λ τ '; 0$ u 1]. 3 6 ' as claimed The method for manufacturing a light-emitting diode according to item 30, wherein φ, the step of forming the trench is performed by a dry etching method, a wet etching, or a mechanical cutting grinding method. 3 7 κ * method '如曱The manufacturer of the light-emitting diode according to claim 30, wherein the material of the dielectric protective layer is selected from the group consisting of a cerium-containing oxide, a nitride containing 19 200828621 A group of high dielectric organic materials. 38. A method for fabricating a light-emitting diode according to the third aspect of the patent, wherein the material of the dielectric protective layer is dioxide or nitrite 39. The method for manufacturing a light-emitting diode according to the third aspect of the invention, wherein the material of the second electrically transparent electrode is selected from the group consisting of indium tin oxide, indium oxide, tin oxide, and oxidation. And a method for manufacturing a light-emitting diode according to the third aspect of the invention, wherein the material of the metal reflective layer is selected from the group consisting of gold, aluminum, silver, A group of platinum, a road, a nickel, and an alloy thereof. 41. The method of claim 2, wherein the first electrically limited layer is an N type, the second The electrically limited layer is p, 42. The light-emitting diode according to item 41 of the patent scope: 'The step of forming the first light-emitting diode is further included at least after the step of growing the substrate, forming -[ The electric electrode is on the exposed semiconductor layer and forms a -first-electrode electrode The method of manufacturing a light-emitting diode according to the invention of claim 42, wherein the material of the first electrical electrode is selected from the group consisting of titanium, A method of manufacturing a light-emitting diode according to the invention of claim 42, wherein the material of the first electrical electrode is a conductive metal oxide. The method for manufacturing a light-emitting diode according to Item 42, wherein the material of the first electrical electrode pad is selected from the group consisting of titanium, aluminum, gold and alloys thereof. The method for manufacturing a light-emitting diode according to claim 30, wherein the step of forming the first metal substrate is performed by an electroplating method or a deposition method, and is described in claim 30. The method for manufacturing a light-emitting diode, wherein the material of the first metal substrate is selected from the group consisting of copper, molybdenum, nickel, gold, silver, platinum, aluminum, and alloys thereof. Manufactured by a method 48. For example, in the third method of the patent application, in which the step of thermal stress difference in the step of growing the substrate is peeled off. The light-emitting diode system utilizes a laser stripping method, such as the third method of the patent application scope, wherein the cleaning step utilizes a light-emitting dry-type engraving method and a diode. Manufacturer of a wet engraving method, 21 200828621 a mechanical grinding method or a high temperature baking method. 50. A method of fabricating a light-emitting diode according to claim 49, wherein the dry etching method is a reactive ion surrogate technique or an inductive surface electrophoresis ion engraving technique. 5 1 . The method for producing a light-emitting diode according to claim 49, wherein the dry etching method uses a chlorine gas. 52. A method of producing a light-emitting diode according to claim 49, wherein the wet etching method uses hot nitric acid or potassium hydroxide. 53. A method of producing a light-emitting diode according to claim 49, wherein the mechanical polishing method uses a polishing pad and a polishing liquid. The method of producing a light-emitting diode according to claim 49, wherein the high-temperature baking method uses high temperature to crack the residue remaining on the growth substrate. twenty two