200827472 九、發明說明： 【發明所屬之技術領域】 本發明涉及一種奈米碳管陣列的製備方法，尤盆涉及 採用雷射輔助化學氣相沈積法製備奈米碳管陣列的方法。 【先前技術】 奈米碳管係九十年代初發現的—種新型—維奈米材 料。奈米礙管的特殊結構決定其具有特殊的性質，如高抗 • 張=與高熱穩定性；隨著奈米石炭管螺旋方式的變化，奈 米碳管可呈現出金屬性或半導體性等。由於奈米碳管具有 理想的-維結構以及在力學、電學、熱學等領域優良的性 質，其在材料科學、化學、物理學等交叉學科領域已展現 出廣闊的應时景，在科學研究以及產業_上也受到越 來越多的關注。 目前比較成熟的製備奈米碳管的方法主要包括電弧放 電沬（Arc Discharge)、雷射燒蝕法（Laser Ablati〇n)及化 修 學氣相沈積法(Chemical VaP〇r Deposition)。其中，化學 氣相沈積法與前兩種方法相比具有產量高、可控性強、與 先丽的積體電路工藝相容等優點，便於工業上進行大規模 合成，因此近幾年備受關注。 用於製備奈米碳管的化學氣相沈積法一般包括傳統熱 化學氣相沈積法（Thermal Chemical Vapor Deposition， CVD )、電裝化學氣相沈積法（piasma chemical Vapor Deposition，PCVD)與雷射辅助化學氣相沈積法 (Laser-Induced Chemical Vapor Deposition ， LICVD)。 6 200827472 先前的雷射輔助化學氣相沈積法一般以雷射為快速加 熱熱源，㈣絲直接照射在生長所㈣基底上使其 溫度升尚，達到生長所需的溫度。當含碳反應氣體流經高 溫基底表面時’受基底影響升溫’通過與基底上的催化劑 作用，反應氣體產生熱解或化學反應，從而實現奈米後管 的生長。 惟，先前的雷射輔助化學氣相沈積法生長奈米碳管有 以下不足之處·首先，該方法—般需在—密封的反應爐内 進行，並使彳于反應氣體充滿整個反應空間，其設備較為複 雜，且難以製作大型的反應爐用於在大面積基板上通過化 學氣相沈積法生長奈米碳管。其次，該方法採用雷射光束 直接正面照射在奈米碳管生長所需的基底上，由於雷射場 強度較高，容易破壞奈米碳管的生長。再次，先前的方法 I不月b精確控制雷射光束的移動，容易由於雷射光束聚 焦不良無法實現圖案化奈米碳管陣列的生長。 有鑒於此，確有必要提供一種改進的雷射辅助化學氣 相沈積法，其可以實現精確的圖案化生長奈米碳管陣列。 【發明内容】 一種奈米碳管陣列的製備方法，其包括以下步 驟· k供一基底；在上述基底一表面形成一催化劑 層；通入碳源氣與載氣的混合氣體流經上述催化劑層 表面，以及將雷射光束通過一振鏡掃描系統聚焦照射 在上述基底上從而生長奈米碳管陣列。 相較於先前技術，所述的奈米碳管陣列的製備方 7 200827472 法採用振鏡掃描糸統控制雷射光束聚焦照射在基底 κ 上，由於振鏡本身具有較高的掃描頻率，可以實現雷 射光束高速掃描過程照射在基底上從而實現圖案化 生長奈米碳管陣列。另，由於採用含碳催化劑層或光 吸收層，本發明實施例奈米碳管陣列的製備方法無需 在一密封的反應室内進行，方法簡單可控。 【實施方式】 以下將結合附圖對本發明作進一步的詳細說明。 # 請參閱圖1，本發明實施例奈米碳管陣列的製備方 法主要包括以下幾個步驟： 步驟一：提供一基底。 本實施例中基底材料選用财南溫材料製成。優選 地，本實施例中基底材料還可分別選用矽、二氧化矽 或金屬材料等不透明材料或玻璃、可塑性有機材料等 透明材料。 步驟二：在上述基底的一表面均勻形成一催化劑 〇 該催化劑層的形成可利用熱沈積、電子束沈積或 濺射法來完成。催化劑層的材料選用鐵，也可選用其 他材料，如氮化鎵、鈷、鎳及其合金材料等。進一步 地，該催化劑層可通過高溫退火等方式氧化催化劑 層，形成催化劑氧化物顆粒。 另，本發明實施例催化劑層也可選用形成一種含 碳的催化劑層，或者在該催化劑層與基底之間預先形 8 200827472 成一光吸收層。 當選用形成一種含碳的催化劑層時，該含碳的催 化劑層的製備方法包括以下步驟：提供一種分散劑與 一種含碳物質的混合物，並與一溶劑混合形成溶液； 將該溶液進行超聲波處理分散；在該分散後的溶液中 加入金屬硝酸鹽混合物溶解得到一催化劑溶液；將該 催化劑溶液均勻塗敷於基底表面；烘烤該塗敷有催化 劑溶液的基底從而在基底表面形成一含碳的催化劑 鲁 層。 其中，該含碳物質包括碳黑或石墨等含碳材料。 該分散劑用於將含碳物質均勻分散，優選為十二烷基 苯石黃酸鈉（Sodium Dodecyl Benzene Sulfonate, SDBS)。溶劑可選擇為乙醇溶液或水。該分散劑與含 碳物質的品質比為1:2〜;hlO，本實施例優選為將 0〜100毫克的十二烷基苯磺酸鈉與100〜500毫克的碳 0 黑混合物與乙醇溶液混合形成溶液。 該金屬瑞酸鹽混合物包括确酸鎂（Mg(N〇3)2·6H2O) 與石肖酸鐵（卩6(购3)3,9112〇)、石肖酸钻（00(1^〇3)2_6112〇)或石肖 酸錄（N i ( N〇3) 2 · 6 H2O)中任一種或幾種組成的混合物。 本實施例優選為將硝酸鐵（Fe(N〇3)3· 9H2〇)與硝酸鎂 (Mg(N〇3)2_6H2〇)加入到溶液中形成催化劑溶液，該催 化劑溶液中含有0.01〜0.5摩爾/升（Mol/L)的硝酸鎂 與0. 01〜0. 5Mol/L的石肖酸鐵。 烘烤的溫度為60〜100°C。烘烤的作用為將催化劑 9 200827472 溶液中的溶劑蒸發從而形成一含碳催化劑層。 本實施例中，該含碳的催化劑層的厚度為10〜100 微米。催化劑溶液塗敷於基底表面可採用旋轉塗敷的 方式，其轉速為1000〜5000轉/分（rpm)，優選為 1500rpm 〇 當選用在該催化劑層與基底之間預先形成一光吸 收層時，該光吸收層的製備方法包括以下步驟：將一 含碳材料塗敷於上述基底表面，該含碳材料要求能與 基底表面結合緊密；在保護氣體環境中，將塗敷有含 碳材料的基底逐漸加溫到約300°C以上，並烘烤一段 時間；自然冷卻到室溫形成一光吸收層於基底表面。 本發明實施例中，保護氣體包括氮氣或惰性氣 體’含碳材料優選為目前廣泛應用於電子產品如冷陰 極顯像管中的石墨乳材料。進一步地，該石墨乳可通 過旋轉塗敷方式形成於基底表面，其轉速為 1000〜5000rpm，優選為1500rpm。所形成的光吸收層 的厚度為1〜20微米。另，烘烤的目的在於使得含碳 材料中的其他材料蒸發，如將石墨乳中的有機物蒸 發0 進一步地，當使用光吸收層時，該催化劑層可通 過將一催化劑溶液塗敷於光吸收層上形成，其具體步 驟包括：提供-催化劑乙醇溶液；將該催化劑乙醇溶BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for preparing a carbon nanotube array, and a method for preparing a carbon nanotube array by laser assisted chemical vapor deposition. [Prior Art] The carbon nanotubes were discovered in the early 1990s as a new type of Venai material. The special structure of the nano tube is determined by its special properties, such as high resistance, tensile resistance and high thermal stability. With the change of the spiral shape of the nano-carboniferous tube, the carbon nanotubes can exhibit metallic or semiconducting properties. Because carbon nanotubes have an ideal-dimensional structure and excellent properties in the fields of mechanics, electricity, heat, etc., they have shown a broad time in the interdisciplinary fields of materials science, chemistry, and physics, in scientific research and Industry _ has also received more and more attention. At present, the more mature methods for preparing carbon nanotubes mainly include arc discharge, laser ablation (Laser Ablati〇n) and chemical VaP〇r Deposition. Among them, the chemical vapor deposition method has the advantages of high yield, strong controllability, compatibility with the advanced integrated circuit process, and the like, which is convenient for industrial large-scale synthesis, and thus has been widely accepted in recent years. attention. The chemical vapor deposition method for preparing carbon nanotubes generally includes traditional thermal chemical vapor deposition (CVD), piasma chemical Vapor Deposition (PCVD) and laser assisted Laser-Induced Chemical Vapor Deposition (LICVD). 6 200827472 The previous laser-assisted chemical vapor deposition method generally used a laser as a rapid heating heat source, and (4) the wire was directly irradiated on the substrate of the growth chamber (4) to raise the temperature to reach the temperature required for growth. When the carbon-containing reaction gas flows through the surface of the high-temperature substrate, the temperature is increased by the influence of the substrate, and the reaction gas generates a pyrolysis or a chemical reaction by reacting with the catalyst on the substrate, thereby realizing the growth of the nanotube rear tube. However, the previous laser-assisted chemical vapor deposition method for growing carbon nanotubes has the following disadvantages. First, the method is generally carried out in a sealed reactor, and the reaction gas is filled in the entire reaction space. The equipment is complicated, and it is difficult to make a large reactor for growing carbon nanotubes by chemical vapor deposition on a large-area substrate. Secondly, the method uses a laser beam to directly illuminate the substrate required for the growth of the carbon nanotubes. Due to the high intensity of the laser field, it is easy to destroy the growth of the carbon nanotubes. Again, the previous method I does not accurately control the movement of the laser beam, and it is easy to achieve the growth of the patterned carbon nanotube array due to poor focusing of the laser beam. In view of this, it is indeed necessary to provide an improved laser-assisted chemical vapor deposition method that enables accurate patterned growth of carbon nanotube arrays. SUMMARY OF THE INVENTION A method for preparing a carbon nanotube array includes the steps of: k providing a substrate; forming a catalyst layer on a surface of the substrate; and flowing a mixed gas of a carbon source gas and a carrier gas through the catalyst layer The surface, and the laser beam is focused on the substrate by a galvanometer scanning system to grow the carbon nanotube array. Compared with the prior art, the preparation method of the carbon nanotube array 7 200827472 adopts a galvanometer scanning system to control the laser beam to be focused on the substrate κ, and the galvanometer itself has a high scanning frequency, which can be realized. A high-speed scanning process of the laser beam is irradiated onto the substrate to effect patterning of the carbon nanotube array. In addition, since the carbon nanotube catalyst layer or the light absorbing layer is used, the preparation method of the carbon nanotube array of the embodiment of the present invention does not need to be carried out in a sealed reaction chamber, and the method is simple and controllable. [Embodiment] Hereinafter, the present invention will be further described in detail with reference to the accompanying drawings. # Please refer to FIG. 1. The method for preparing a carbon nanotube array according to an embodiment of the present invention mainly includes the following steps: Step 1: Provide a substrate. In this embodiment, the base material is made of Cainan warm material. Preferably, in the present embodiment, the base material may also be made of an opaque material such as ruthenium, ruthenium dioxide or a metal material or a transparent material such as glass or a plastic organic material. Step 2: uniformly forming a catalyst on a surface of the substrate 〇 The formation of the catalyst layer can be performed by thermal deposition, electron beam deposition or sputtering. The material of the catalyst layer is iron, and other materials such as gallium nitride, cobalt, nickel and alloy materials thereof may also be used. Further, the catalyst layer may oxidize the catalyst layer by high temperature annealing or the like to form catalyst oxide particles. In addition, the catalyst layer of the embodiment of the present invention may also be used to form a carbon-containing catalyst layer or to form a light absorbing layer between the catalyst layer and the substrate. When a catalyst layer for forming a carbon is used, the method for preparing the carbon-containing catalyst layer comprises the steps of: providing a mixture of a dispersant and a carbonaceous material, and mixing with a solvent to form a solution; and ultrasonically treating the solution. Dispersing; adding a metal nitrate mixture to the dispersed solution to obtain a catalyst solution; uniformly applying the catalyst solution to the surface of the substrate; baking the substrate coated with the catalyst solution to form a carbonaceous surface on the surface of the substrate Catalyst layer. Wherein, the carbonaceous material comprises a carbonaceous material such as carbon black or graphite. The dispersant is used to uniformly disperse the carbonaceous material, preferably sodium dodecyl Benzene Sulfonate (SDBS). The solvent can be selected from an ethanol solution or water. The mass ratio of the dispersing agent to the carbonaceous material is 1:2~; hlO. In this embodiment, preferably 0 to 100 mg of sodium dodecylbenzenesulfonate and 100 to 500 mg of carbon black mixture and ethanol solution. Mix to form a solution. The metal ruthenate mixture includes magnesium sulphate (Mg(N〇3)2·6H2O) and iron oxalate (卩6 (purchasing 3) 3,9112〇), lithospermic acid drill (00 (1^〇3) a mixture of any one or several of the following: 2_6112〇) or lithic acid (N i (N〇3) 2 · 6 H2O). In this embodiment, ferric nitrate (Fe(N〇3)3·9H2〇) and magnesium nitrate (Mg(N〇3)2_6H2〇) are preferably added to the solution to form a catalyst solution, and the catalyst solution contains 0.01 to 0.5 moles. / liter (Mol / L) of magnesium nitrate with 0. 01~0. 5Mol / L of iron oxalate. The baking temperature is 60 to 100 °C. The effect of baking is to evaporate the solvent in the catalyst 9 200827472 solution to form a carbon-containing catalyst layer. In this embodiment, the carbon-containing catalyst layer has a thickness of 10 to 100 μm. The catalyst solution may be applied to the surface of the substrate by spin coating at a rotation speed of 1000 to 5000 rpm, preferably 1500 rpm. When a light absorbing layer is preliminarily formed between the catalyst layer and the substrate, The method for preparing the light absorbing layer comprises the steps of: applying a carbonaceous material to the surface of the substrate, the carbonaceous material is required to be tightly bonded to the surface of the substrate; and in the protective gas environment, the substrate coated with the carbonaceous material Gradually warm to above about 300 ° C, and bake for a period of time; naturally cool to room temperature to form a light absorbing layer on the surface of the substrate. In the embodiment of the present invention, the shielding gas includes nitrogen or an inert gas. The carbonaceous material is preferably a graphite emulsion material which is currently widely used in electronic products such as cold cathode tubes. Further, the graphite emulsion may be formed on the surface of the substrate by spin coating at a rotation speed of 1000 to 5000 rpm, preferably 1500 rpm. The thickness of the light absorbing layer formed is 1 to 20 μm. In addition, the purpose of baking is to evaporate other materials in the carbonaceous material, such as evaporating organic matter in the graphite milk. Further, when a light absorbing layer is used, the catalyst layer can be applied to light absorption by applying a catalyst solution. Formed on the layer, the specific steps thereof include: providing a catalyst ethanol solution; dissolving the catalyst in ethanol
液塗敷於上述光吸收層表面D 本實施例中，該催化劑乙醇溶液為將金屬俩鹽 200827472 混合物與乙醇溶液混合形成。該金屬硝酸鹽混合物為 硝酸鎂（Mg(N〇3)2,6H2〇)與石肖酸鐵（Fe(N〇3)3,9H2〇)、石肖 酸钻（Co(N〇3)2 · 6H2O)或石肖酸錄（Ni (Ν〇3)2 · 6H2O)中任一 種或幾種組成的混合物。優選地，該催化劑乙醇溶液 為硝酸鎂與硝酸鐵組成的混合物的乙醇溶液，溶液中 硝酸鐵的含量為0.01〜0.5M〇1/L，硝酸鎂的含量為 0. 01〜0. 5Mol/L。該催化劑乙醇溶液可通過旋轉塗敷 形成於光吸收層表面，其轉速優選為約1500rpm。所 # 形成的催化劑層的厚度為1〜100奈米。 步驟三：通入碳源氣與載氣的混合氣體流經上述 催化劑表面從而使催化劑附近達到所需的碳源氣深 度。 該碳源氣優選為廉價氣體乙炔，也可選用其他碳 氫化合物如甲烷、乙烷、乙烯等。載氣氣體優選為氬 氣，也可選用其他惰性氣體如氮氣等。本實施例中， 碳源氣與載氣可通過一氣體喷嘴直接通入到上述催 化劑層表面附近。載氣與碳源氣的通氣流量比例為 5 : 1〜10 : 1，本實施例優選為通以200標準毫升/分 (seem)的氬氣與25sccm的乙炔。 步驟四：將雷射光束通過一振鏡掃描系統聚焦照 射在上述基底上從而生長奈米碳管陣列。 雷射光束可通過傳統的氬離子雷射器、二氧化碳 雷射器或半導體雷射器產生。本實施例中，雷射光束 優選為採用雷射二極體，其功率為2瓦，雷射波長為 11 200827472 808奈米。 請參閱圖2，該振鏡掃描系統10包括按照雷射傳 播方向依次排列的一準直透鏡12，一第一偏轉振鏡 14，——第二偏轉透鏡16及一聚焦透鏡18。雷射器20 產生的雷射光束22首先傳播到准直透鏡12，由於准 直透鏡12作用後平行入射到第一偏轉振鏡14。該准 直透鏡12應確保出射的平行雷射光束22的截面積小 於第一偏轉振鏡14的面積。經第一偏轉振鏡14反射 後，雷射光束22又經過對應於第一偏轉振鏡14設置 的第二偏轉振鏡16反射後入射到聚焦透鏡18。通過 聚焦透鏡18的聚焦作用，雷射光束22被聚焦照射在 具有催化劑的基底24上。 本實施例中，第一偏轉振鏡14與第二偏轉振鏡16 均為形成有反射膜的水準鏡面，該反射膜的材料與所 用雷射波長相關，需確保入射雷射光束22的反射率 要達到最大值。第一偏轉振鏡14與第二偏轉振鏡16 可分別沿著X、Y軸高速偏轉振動反射雷射光束22。 進一步地，可通過用計算機編程控制第一偏轉振鏡14 與第二偏轉振鏡16高速偏轉，從而控制雷射光束22 高速掃描照射在基底24上。 該聚焦透鏡18可選用具有較大直徑的F-0透鏡 對出射.的雷射光束22進行聚焦，並將基底24設置在 聚焦透鏡18的焦點上，從而可實現控制雷射光束22 在較大範圍内掃描聚焦照射在基底24上。 12 200827472 可以理解，該聚焦後的雷射光束22可從正面直接 照射在上述基底24催化劑層表面，當基底24材料為 透明材料或厚度較薄時’該雷射光束22也可聚焦後 照射在基底24的反面’當雷射光束22照射在基底24 的反面％•，該雷射光束22能量可迅速透過基底24傳 遞到催化劑層並加熱催化劑。 由於催化劑的作用，以及雷射光束22照射在基底 24催化劑層上加熱催化劑，通入到基底22附近的碳 源氣在一定溫度下熱解成碳單元（C=C或c)與氫氣。 其中’氳氣會將被氧化的催化劑還原，碳單元吸附於 催化劑層表面，從而生長出奈米碳管。另，本實施例 中’利用含碳催化劑層或光吸收層吸收雷射能量的作 用，該化學氣相沈積法反應溫度可低於6⑽攝氏度。 另，該含碳催化劑層或光吸收層可在反應過程中釋放 出碳原子促進奈米碳管的成核及生長。 由於本發明實施例利用振鏡掃描系統丨0控制雷射 光束22聚焦照射在基底24上’第一偏轉振鏡14與 第二偏轉振鏡16的掃描頻率报高’ 一般為 1000〜1GG_雜，故可實現高速雷射掃描照射。同 時’該振鏡掃描純1G可按照預定圖案通過計算機 編程控制振騎描過程，從而可實_案化的奈米碳 管陣列生長。 、…另/由於本發明實施娜用雷射聚顏射生長奈 米反&陣列’催化劑局部溫度在較短時間内能夠被加 13 200827472 —熱並吸收足夠的能量，同時，碳源氣為直接通入到被 加,、、、的催化知表面附近。因此，本發明實施例無需— 密封的反應室，即可同時保證生長奈米碳管陣列的催 :匕劑附近達到所需的溫度及碳源氣的濃度，且，由於 石厌源氣刀解產生的氫氣的還原作用，可確保氧化的催 化劑，夠被還原，並促使奈米碳管陣列生長。 明參閱圖3’當本發明實施例採用含碳的催化劑層 癱 _，通過振鏡掃描控制雷射光束間隔且垂直地從反i &射在玻璃基底的催化劑上，可得到如圖3所示的圖 案化的奈米碳官陣列。每個奈米碳管陣列為山丘形 狀’且垂直於玻璃基底生長。該奈米碳管陣列的直徑 為50〜80微米，高度為10〜20微米。每個奈米碳管的 直徑為40〜80奈米。 凊參閱圖4,當本發明實施例採用石墨乳層作為光 吸收層蚪形成於基底與催化劑層之間時，通過振鏡掃 • 描控制雷射光束間隔且垂直地從反面照射在玻璃基 f的催化劑上’可得到如圖4所示的圖案化的奈米碳 &陣列。每個奈米碳管陣列為山丘形狀，且垂直於基 底生長。該奈来碳管陣列的直徑為1〇〇〜2〇〇微米，高 度為10〜20微米。每個奈米碳管的直徑為1〇〜3〇奈米。 綜上所述，本發明確已符合發明專利之要件，遂 提出專射請。惟，以上所述者僅為本發明之較 仏貝％例，自不能以此限制本案之申請專利範圍。舉 凡热悉本案技藝之人士援依本發明之精神所作之等 200827472 效修飾或變化，皆應涵蓋於以下申請專利範圍内。 ^ 【圖式簡單說明】 圖1係本發明實施例奈米碳管陣列的製備方法的 流程不意圖。 圖2係本發明實施例奈米碳管陣列的製備方法所 用的振鏡掃描糸統的結構不意圖。 圖3係本發明實施例採用含碳催化劑層獲得的奈 米碳管陣列圖形的掃描電鏡照片。 • 圖4係本發明實施例採用光吸收層獲得的奈米碳 管陣列圖形的掃描電鏡照片。 【主要元件符號說明】 無 15The liquid is applied to the surface D of the above light absorbing layer. In this embodiment, the catalyst ethanol solution is formed by mixing a mixture of a metal salt of 200827472 with an ethanol solution. The metal nitrate mixture is magnesium nitrate (Mg(N〇3)2, 6H2〇) and iron tartaric acid (Fe(N〇3)3,9H2〇), and lithospermic acid (Co(N〇3)2 · 6H2O) or a mixture of succinic acid (Ni (Ν〇3) 2 · 6H2O) or a mixture of several components. 1-5. 5Mol/L. The content of the magnesium nitrate is 0.01~0.5M〇1/L, and the content of the magnesium nitrate is 0. 01~0. 5Mol/L . The catalyst ethanol solution can be formed on the surface of the light absorbing layer by spin coating, and the rotation speed thereof is preferably about 1,500 rpm. The thickness of the catalyst layer formed by # is 100 to 100 nm. Step 3: a mixed gas of a carbon source gas and a carrier gas is passed through the surface of the catalyst to achieve a desired carbon source gas depth in the vicinity of the catalyst. The carbon source gas is preferably an inexpensive gas acetylene, and other hydrocarbons such as methane, ethane, ethylene, or the like may also be used. The carrier gas is preferably argon, and other inert gases such as nitrogen may also be used. In this embodiment, the carbon source gas and the carrier gas can be directly introduced into the vicinity of the surface of the catalyst layer through a gas nozzle. The ratio of the aeration flow rate of the carrier gas to the carbon source gas is 5:1 to 10: 1, and this embodiment is preferably an argon gas of 200 standard milliliters per minute (seem) and an acetylene of 25 seem. Step 4: The laser beam is focused on the substrate through a galvanometer scanning system to grow the carbon nanotube array. The laser beam can be generated by a conventional argon ion laser, carbon dioxide laser or semiconductor laser. In this embodiment, the laser beam is preferably a laser diode having a power of 2 watts and a laser wavelength of 11 200827472 808 nm. Referring to Fig. 2, the galvanometer scanning system 10 includes a collimating lens 12, a first deflecting galvanometer 14, a second deflecting lens 16, and a focusing lens 18, which are sequentially arranged in the direction of laser propagation. The laser beam 22 generated by the laser 20 is first propagated to the collimator lens 12, and is incident in parallel to the first deflection galvanometer 14 due to the action of the collimator lens 12. The collimating lens 12 should ensure that the cross-sectional area of the exiting parallel laser beam 22 is smaller than the area of the first deflecting galvanometer 14. After being reflected by the first deflecting galvanometer 14, the laser beam 22 is reflected by the second deflecting galvanometer 16 corresponding to the first deflecting galvanometer 14 and then incident on the focusing lens 18. By the focusing action of the focusing lens 18, the laser beam 22 is focused and irradiated onto the substrate 24 having the catalyst. In this embodiment, the first deflection galvanometer 14 and the second deflection galvanometer 16 are each a level mirror surface on which a reflective film is formed. The material of the reflection film is related to the wavelength of the laser used, and the reflectance of the incident laser beam 22 needs to be ensured. To reach the maximum. The first deflection galvanometer 14 and the second deflection galvanometer 16 are capable of deflecting and reflecting the laser beam 22 at high speed along the X and Y axes, respectively. Further, the high speed scanning of the laser beam 22 on the substrate 24 can be controlled by controlling the high speed deflection of the first deflection galvanometer 14 and the second deflection galvanometer 16 by computer programming. The focusing lens 18 can selectively focus the laser beam 22 that is emitted by using an F-0 lens having a larger diameter, and set the substrate 24 at the focus of the focusing lens 18, thereby achieving control of the laser beam 22 in a larger The scanning focus is focused on the substrate 24 in the range. 12 200827472 It can be understood that the focused laser beam 22 can be directly irradiated from the front surface on the surface of the catalyst layer of the substrate 24, and when the material of the substrate 24 is transparent or thin, the laser beam 22 can also be focused and illuminated. The reverse side of the substrate 24' when the laser beam 22 is incident on the opposite side of the substrate 24, the energy of the laser beam 22 can be quickly transmitted through the substrate 24 to the catalyst layer and heat the catalyst. Due to the action of the catalyst, and the laser beam 22 is irradiated on the catalyst layer of the substrate 24 to heat the catalyst, the carbon source gas introduced into the vicinity of the substrate 22 is pyrolyzed to a carbon unit (C=C or c) and hydrogen at a certain temperature. Wherein the helium gas reduces the oxidized catalyst, and the carbon unit adsorbs on the surface of the catalyst layer to grow the carbon nanotubes. Further, in the present embodiment, the action of absorbing the laser energy by the carbon-containing catalyst layer or the light absorbing layer may be carried out at a reaction temperature of less than 6 (10) degrees Celsius. Alternatively, the carbon-containing catalyst layer or light absorbing layer can release carbon atoms during the reaction to promote nucleation and growth of the carbon nanotubes. Since the galvanometer scanning system 丨0 controls the laser beam 22 to be focused on the substrate 24 by the galvanometer scanning system '0, the scanning frequency of the first deflection galvanometer 14 and the second deflection galvanometer 16 is high, generally 1000~1GG_ Therefore, high-speed laser scanning illumination can be realized. At the same time, the galvanometer scanning pure 1G can control the vibration riding process by computer programming according to a predetermined pattern, so that the real carbon nanotube array can be grown. In addition, due to the implementation of the present invention, the use of laser-concentrated growth of the nano-reverse & array 'catalyst local temperature can be added in a relatively short period of time. 200827472 - heat and absorb enough energy, while the carbon source gas is direct Passed into the vicinity of the catalytically known surface of the added,,,,. Therefore, the embodiment of the present invention does not require a sealed reaction chamber, and can simultaneously ensure that the growth of the carbon nanotube array is achieved: the desired temperature and the concentration of the carbon source gas are reached in the vicinity of the tantalum agent, and The reduction of hydrogen produced ensures that the oxidized catalyst is sufficiently reduced and promotes the growth of the nanotube array. Referring to FIG. 3', when the carbonaceous catalyst layer 瘫_ is used in the embodiment of the present invention, the laser beam spacing is controlled by galvanometer scanning and vertically from the anti-i & shot on the glass substrate catalyst, as shown in FIG. The patterned nano carbon officer array is shown. Each of the carbon nanotube arrays is in the shape of a hill and grows perpendicular to the glass substrate. The carbon nanotube array has a diameter of 50 to 80 μm and a height of 10 to 20 μm. Each carbon nanotube has a diameter of 40 to 80 nm. Referring to FIG. 4, when the graphite emulsion layer is used as the light absorbing layer 蚪 between the substrate and the catalyst layer, the laser beam spacing is controlled by the galvanometer scanning and vertically irradiated from the reverse surface to the glass base f. On the catalyst, a patterned nanocarbon & array as shown in Figure 4 is obtained. Each of the carbon nanotube arrays is in the shape of a hill and grows perpendicular to the substrate. The carbon nanotube array has a diameter of 1 〇〇 2 2 μm and a height of 10 to 20 μm. Each carbon nanotube has a diameter of 1 〇 to 3 〇 nanometer. In summary, the present invention has indeed met the requirements of the invention patent, and has proposed a special shot. However, the above description is only a comparative example of the present invention, and it is not possible to limit the scope of the patent application in this case. Anyone who is eager to learn the skill of the case in accordance with the spirit of the present invention shall be included in the scope of the following patent application. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a schematic flow chart showing a method of preparing a carbon nanotube array according to an embodiment of the present invention. Fig. 2 is a schematic view showing the structure of a galvanometer scanning system used in the method for preparing a carbon nanotube array according to an embodiment of the present invention. Fig. 3 is a scanning electron micrograph of a carbon nanotube array pattern obtained by using a carbon-containing catalyst layer in an embodiment of the present invention. Figure 4 is a scanning electron micrograph of a carbon nanotube array pattern obtained using a light absorbing layer in accordance with an embodiment of the present invention. [Main component symbol description] None 15