200826316 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種半導體光電元件及其切割方法， 尤指一種合併電射切割與鑽石刀切割的半導體光電元件的 切割方法’其可以去除半導體光電元件晶粒上的焦黑區域 並減少鑽石刀的損耗。 【先前技術】200826316 IX. Description of the Invention: [Technical Field] The present invention relates to a semiconductor photovoltaic element and a cutting method thereof, and more particularly to a method for cutting a semiconductor photovoltaic element combined with electric cutting and diamond knife cutting, which can remove a semiconductor The blackened area on the optoelectronic component die and reduces the loss of the diamond knife. [Prior Art]
由於紅藍綠是全彩的三原色，高亮度的藍光發光二極 體（LED ) •於全彩色顯示器的應用日益受到重視，而光資 訊存取技術也將採用具有短波長的藍光發光二極體作為光 源。此外，由藍光發光二極體衍生的白光發光二極體也被 認為是下一世代的照明技術。 一般傳統的發光二極體的切割方式有鑽石刀切割與雷 射切割這兩種方式。請參照第五圖所巾，鑽石刀切割係於 發光二極體晶片之基板背面以鑽石刀切割出—道深度數微 米（_)的溝槽（8 0 )，又稱為劃線（scribe)程序， 再於發光二極體晶片正面對準劃線處以刀片劈裂（break)， 形成發光二極體晶粒。由於白光和藍光發光二極體大多使 用質地非常堅硬的藍寶石基板（sapphire SUbStrate)， 因此若於白光和藍光發光二極體採用鑽石刀切割方法，將 導致鑽石刀刀鋒磨耗嚴重1而增加了發光二極體的製造 成本此外由於鑽石刀係以點接觸的方式切割，因此溝 槽兩側常形成側向與徑向的裂痕，在劈裂時晶片往往無法 完全依照預定的方向斷裂，造成日日日粒的崩角與破裂現象， 5 200826316 因而造成晶粒的外觀不佳，使得製程良率卩欠低 請參照第六圖所示，雷射切割方式係1雷射代替鑽石 刀進行劃線程序，因雷射劃線所劃出的溝槽（9 '· 高深寬比’因此劈裂後的發光二極體晶粒 具有 切割方式為佳，又因雷射切割方式又，.石刀 因此發光二極體晶粒的製造成本較、' 、， 十平乂低0然而，由於雷 割會在溝槽（go)内壁表面形成m因此會 光二極體晶粒表面形成焦黑區域， " 光取出效果。 “先-極體晶粒的 由於晶粒的切割分離已屬於發光二極體的 因此若是因為切割製程的品質不良而造成產品的報二 段製程等耗時又昂貴的生產成本投入將付諸流水丄： 拉的切割對於發光二極體等半導體光電元件曰 鍵的重要性。 、有關 【發明内容】 有鑑於傳統的半導體光電元件切割方法具有外觀良率 不佳、鑽石刀磨耗大以及影響光取出效果等問豸，本發明 之主要目的在於提供一種半導體光電元件及其切判方法， 其可以降低鑽石刀繼，提高外觀良率並可藉由在半導 體光電元件晶粒側面形成或粗糙之表面或傾斜面 光效果。 《刀m 為達成以上的目的，本發明之丰導一 千導肢先電兀件的切割 方法係包括以下之步驟： 準備半導體光電元件晶片：該半導體光電元件晶片係 6 200826316 包含有一基板，於基板表面形成有一磊晶層； μ射劃線·以雷射於半導濟 卞等耻先電兀件晶片表面劃設導 引溝槽； 鑽石刀切割：以鑽石刀於導引溝槽中進行切割； 形成半導體光電元件晶粒· 曰位·將+導體光電元件晶片沿 已劃設之溝槽劈裂，形成半導體光電元件晶粒。 車4勺疋’、中的宙射劃線步驟係於半導體光電元件 晶片之背面劃設導引溝槽。 杈佳的是，其中的雷射劃線步驟前，係先去除半導體 光電元件晶片正面欲劃設溝槽區域之蟲晶層，再以雷射於 基板己去除磊晶層之表面劃設導引溝槽。 本發明之半導體光電元件係具有一基；反與一蟲晶層，蟲晶 層係形成於基板之一表面，基板之側面設有粗糙表面，該 粗糙表面係為於半導體光電元件晶片表面進行雷射到線而 產生導引溝槽，再於導引溝槽内進行鑽石刀切割所形成， 粗糙區域可為一傾斜面或者一波浪狀表面。 較佳的是，傾斜面係設於半導體光電元件晶粒之未設 有蟲晶層之表面。 本發明可達成的具體功效包括： 1 .本發明係先於半導體光電元件晶片之基板上以雷 射劃設導引溝槽’再以鑽石刀切割去除雷射所生成之焦 層’因此可以避免半導體光電元件晶粒表面形成焦黑^ 而影響出光效果。 2 .本發明因鑽石刀係於雷射劃設之導引溝槽中切 7 200826316 告1J，由於焦黑層的材料 寸性貝車乂為脆弱，因此不易 刀的磨損，且相較於僅 I成鑽石 y , 、僅用鑽石刀切割之方式，導引、、盖描^ 側較不易產生側向的f # tV引溝才曰兩 離形成半導體光^>- 牛日日片在分 ❸ 件晶粒時’可使晶片沿預定之導引、番 二“以曰曰粒的外觀較佳，可提高晶粒良率Since red, blue and green are full-color three primary colors, high-brightness blue light-emitting diodes (LEDs) are increasingly being used in full-color displays, and optical information access technologies will also use blue-light emitting diodes with short wavelengths. As a light source. In addition, white light emitting diodes derived from blue light emitting diodes are also considered to be the next generation of lighting technology. Generally, conventional LEDs are cut in two ways: diamond knife cutting and laser cutting. Please refer to the figure in the fifth figure. The diamond knife cutting is performed on the back surface of the substrate of the LED chip by a diamond knife. The groove (80) with a depth of several micrometers (_) is also called a scribe. The program then breaks the scribe line at the front side of the LED chip to form a light-emitting diode die. Since white light and blue light emitting diodes mostly use a very hard sapphire substrate (sapphire SUbStrate), if the white light and blue light emitting diodes are cut by a diamond knife, the diamond knife blade wear is severely increased and the light is increased. In addition, since the diamond blade is cut in a point contact manner, lateral and radial cracks are often formed on both sides of the groove, and the wafer often cannot be completely broken in a predetermined direction during the splitting, resulting in day and day. The chipping and rupture phenomenon of the grain, 5 200826316 Thus, the appearance of the grain is not good, so that the process yield is low, please refer to the sixth figure, the laser cutting method is a laser instead of a diamond knife for the marking process. The groove drawn by the laser scribing line (9 '·high aspect ratio' is therefore preferred for the light-emitting diode die after splitting, and because of the laser cutting method, the stone knife thus emits two poles The manufacturing cost of the bulk crystal grain is lower than that of ',,, and ten flat 然而. However, since the lightning cut forms m on the inner wall surface of the groove (go), the surface of the photodiode grains forms a blackened area. " Light extraction effect. “The first-pole crystal grain is already a light-emitting diode due to the cutting and separation of the crystal grain. Therefore, if the quality of the cutting process is poor, the second-stage process of the product is time-consuming and expensive. The cost input will be put to the forefront: the importance of the cutting of the semiconductor for the semiconductor photoelectric element such as the light-emitting diode. Related [Invention] In view of the conventional semiconductor photoelectric element cutting method, the appearance yield is poor, the diamond knife The main purpose of the present invention is to provide a semiconductor photovoltaic element and a method for determining the same, which can reduce the diamond knives and improve the appearance yield and can be used on the side surface of the semiconductor photovoltaic element die. Forming or roughening the surface or slanting surface light effect. "Knife m In order to achieve the above object, the cutting method of the first guiding limb of the present invention includes the following steps: preparing a semiconductor photovoltaic element wafer: the semiconductor Photovoltaic device wafer system 6 200826316 includes a substrate, an epitaxial layer is formed on the surface of the substrate; ·Draw a guide groove on the surface of the wafer of the shame-electrical element such as the semi-conducting sputum; diamond knife cutting: cutting with a diamond knife in the guiding groove; forming a semiconductor photoelectric element die · 曰The +conductor optoelectronic device wafer is split along the groove which has been drawn to form a semiconductor optoelectronic device die. The step of the scoring of the car is in the direction of the back surface of the semiconductor optoelectronic device wafer. It is preferable that before the laser scribing step, the crystal layer of the front surface of the semiconductor photovoltaic device wafer to be grooved is removed, and then the surface of the epitaxial layer is removed by laser irradiation. The semiconductor photo-electric component of the present invention has a base; an anti-worm layer, the insect layer is formed on one surface of the substrate, and the side surface of the substrate is provided with a rough surface, and the rough surface is a semiconductor photovoltaic element. The surface of the wafer is lasered to the line to form a guiding groove, and then formed by cutting a diamond knife in the guiding groove. The rough area may be an inclined surface or a wavy surface. Preferably, the inclined surface is provided on a surface of the semiconductor photovoltaic element die which is not provided with a crystal layer. The specific efficacies that can be achieved by the present invention include: 1. The present invention is directed to laser-guided trenches on a substrate of a semiconductor photovoltaic device wafer and then cut by a diamond knife to remove the focal layer generated by the laser. The surface of the semiconductor photovoltaic element has a blackened surface which affects the light-emitting effect. 2. The invention is cut by the diamond cutter in the guiding groove of the laser marking. 200828316 1J, because the material of the black layer is fragile, it is not easy to wear the knife, and compared with only I Diamond y, and only use diamond knife to cut, guide, cover the side of the side is less prone to lateral f # tV lead groove to form a semiconductor light ^ gt; - Niu Ri Ri film in the branch When the die is used, the wafer can be guided along the predetermined direction, and the appearance of the grain is better, which can improve the grain yield.
&成本’並且無須保留過寬 Z 之晶粒數目。 a加日日片可分離出 f 3 ·本發明的切割太 ,相較早純僅用雷射的切割方 式，由於鑽石刀的切割可 1方 ^ 、干v 先兒兀件晶粒側面自鈇 r斜面，進而提高半導體光電元件的出光效率。’、、、 【貫施方式】 清茶照第一圖所示，本發明本 法係包括： 本…導體先電元件的切割方 :備半導體光電元件晶片：請參照第二圖所示，半導 脰“弘元件晶片係於基板（1 1 ) )形成有屋晶層（12)， :猫日日日（1 2 )上設有金屬電極（2 (Ί Ο Λ L, M ° y 此初日日層 二I)材料可為ΠΙ，化合物之半導體材料，如GaN、 等3 材料 ap、inp、In隨、InG_、⑽ AIASK劇s 二:料蟲:層（12)材料亦可…族化合物之半 m科，如^、驗侧抓等材料；系晶層（1 料。7^亦可為IV族元素之半導體材料，如Si及Ge等材 =射劃線··以雷射於半導體光電元件晶片之基板表面 …又弓ί溝槽’此時由於雷射的高溫炫融作用，使溝槽内 8 200826316 壁表面形成一焦黑層，請參照第二圖所示，於本發明切割 方法之第一較佳實施例中，雷射係於半導體光電元件晶# 月面’即未形成蠢晶層（1 2 )之表面，劃設導引溝槽（工 1 1 )，凊參照苐三圖所示，於本發明切割方法之第二較 佺貝鈿例巾’先利用製程方式將半導體光電元件晶片正面 欲劃設溝槽區域之蠢晶層（2 2 )去除，#以雷射於基板 (2 1 )己去除蠢晶層（2 2 )之表面劃設導引溝槽（2 11)； r" 鑽石刀切割··以鑽石刀於雷射劃設出之溝槽（1 1 1 ) (211)中進行切割，將雷射形成之焦黑層刮除並增加 劃線冰度，由於焦黑層的材料特性較為脆弱，目此不易造 成鑽石刀的磨損·此日洋士协重止 石谓，此吋由於事先以雷射劃出導引溝槽（丄 11) (211)，因此鑽石刀在溝槽（111) 工 1)内切割時，鑽石刀可以較大的面積與溝槽（工工工） (2 1 1 )接觸，因此溝槽（1 1 1 )( 2 1 1 )兩側較 不易產生側向的裂痕；也由於溝槽（丄丄丄）（2丄工） 兩側軏不易產生側向裂纟，因此晶片無須保留過寬的切割 迢，增加晶片可分離出之晶粒數目； 形成半導體光電元件晶粒：將半導體光電元件晶片沪 已，設之溝槽（111)(211)分離，以形成半導體 先電兀件晶粒’’由於雷射劃線所生成之焦黑層已由鑽石刀 切割刮除’因此可避免焦黑層影響半導體光電元件晶粒的 出光效果；此外，由於溝槽（丄1丄 側向裂痕大幅減少，因此曰片八 A則的 α此日日片在/刀離劈裂時可依溝槽的方 9 200826316 =’避免晶粒產生崩角或破裂的現象，提高晶粒的外 ^率；藉由鑽石刀切割可於半導體光電元件晶粒之側面 自然形成粗糙之表面，此表面可為傾斜面（i丄2) ( 2 夕）而可增加半導體光電元件的出光效果；於第一較佳 戶、施例中，傾斜面（1 1 2 ) # π # 士人 2 )係形成於半導體光電元件晶 ’月面，於第二較佳實施例中，傾斜面（2 1 2 ) f渺 成於半導體光電元件晶粒之正面。 ⑴…形 本發明之半導體光電元件係具有-基板(2 1)與-蟲晶層（12) (22)，蟲晶層（12”2 2 )係形成於基板（1 1 ) f 9 1、 而〇 ( 2 1 )之一表面’基板之側 叹有粗糙表面，該粗糖表面係為於半導體光電元件晶片 傷面進行雷射劃線而產生導引溝槽’再於導引溝槽内進行 石刀切告所形成。該粗糙表面可為傾斜面（1 1 2 )( 2 12) ’由於基板（1 1 ) ( 2 1 )側面係設有傾斜面（；！ 2 )( 2 1 2 )’因此可增加半導體光電元件晶粒的出 ，效果，傾斜面（112) (212)可形成於基板（1 )(21)未形成有磊晶層（12) (22)之表面， :形繼晶層（12) (22)之表面；該粗縫之表面 、可為波浪狀之表面’其係為雷射劃線所產生波浪狀之表 面，再經鑽石刀切割刮除焦黑層所形成。 么請參照第四圖所示，本發明之半導體光電元件實施例 ^ ^ 1)型私極（31) 、一 GaAs 磊晶層（3 2 )、一&cost' and there is no need to retain the number of grains over the width Z. a plus Japanese film can be separated f 3 · The cutting of the invention is too, the cutting method is only purely early with laser, because the cutting of the diamond knife can be 1 square, dry v, the edge of the piece is self-proclaimed r slope, thereby improving the light extraction efficiency of the semiconductor photovoltaic element. ',,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,脰 "Hong element chip is attached to the substrate (1 1 )) to form a roof layer (12), and a metal electrode (2 (Ί Ο Λ L, M ° y) is provided on the cat day (1 2 ). Layer II I) material can be germanium, compound semiconductor material, such as GaN, etc. 3 materials ap, inp, In, InG_, (10) AIASK play s 2: worm: layer (12) material can also be ... half of the compound m, such as ^, inspection side scratching and other materials; systemic layer (1 material. 7 ^ can also be a group IV element of semiconductor materials, such as Si and Ge, etc. = shot line · · laser to semiconductor optoelectronic components The surface of the substrate of the wafer is further curved. At this time, due to the high-temperature glare of the laser, a black layer of black is formed on the surface of the wall of the inner layer of the 200828,16, as shown in the second figure, in the cutting method of the present invention. In a preferred embodiment, the laser is attached to the surface of the semiconductor photovoltaic element, that is, the surface of the semiconductor layer (1 2 ) is not formed, and the guiding is performed. The groove (Work 1 1 ), as shown in the third figure of the present invention, is the second embodiment of the cutting method of the present invention. The layer (2 2 ) is removed, and the guide groove (2 11) is removed from the surface of the substrate (2 2 ) by removing the stray layer (2 2 ); r" diamond knife cutting · with a diamond knife The laser is cut in the groove (1 1 1 ) (211) of the laser, and the black layer formed by the laser is scraped off and the ice is increased. Since the material property of the black layer is weak, it is not easy to cause diamonds. The wear of the knife. On this day, the foreign scholars said that the diamond was cut in the groove (111) 1) because the guide groove (丄11) (211) was drawn in advance by the laser. The diamond knife can be in contact with the groove (worker) (2 1 1 ) in a large area, so the sides of the groove (1 1 1 ) ( 2 1 1 ) are less prone to lateral cracks; also due to the groove (丄丄丄) (2) The side 軏 is not prone to lateral cracking, so the wafer does not need to retain too wide cutting 迢 to increase the number of grains that can be separated by the wafer. Forming a semiconductor photovoltaic element die: separating the semiconductor photovoltaic device wafer, the trench (111) (211) is separated, to form a semiconductor first power die grain '' due to the laser scribing Cut and scrape by a diamond knife', so that the blackening layer can be prevented from affecting the light-emitting effect of the semiconductor photovoltaic element die; in addition, since the groove (the lateral crack of the 丄1丄 is greatly reduced, the α-day film of the 八片八A / knife can be separated from the crack according to the square of the groove 9 200826316 = 'avoid the phenomenon of chipping or cracking of the grain, improve the external rate of the grain; cut by the diamond knife can be naturally on the side of the semiconductor photovoltaic element die Forming a rough surface, the surface may be an inclined surface (i丄2) (2 )) to increase the light-emitting effect of the semiconductor photovoltaic element; in the first preferred household, the embodiment, the inclined surface (1 1 2 ) # π #士人2) is formed on the semiconductor photovoltaic element crystal 'moon surface. In the second preferred embodiment, the inclined surface (2 1 2 ) f is formed on the front side of the semiconductor photovoltaic element die. (1) The semiconductor photo-electric component of the present invention has a substrate (21) and a worm layer (12) (22), and a worm layer (12"2 2 ) is formed on the substrate (1 1 ) f 9 1 . On the other hand, the surface of the substrate (2 1 ) has a rough surface on the side of the substrate, and the surface of the raw sugar is subjected to laser scribing on the wafer surface of the semiconductor photovoltaic element to generate a guiding groove and then in the guiding groove. The rough surface can be formed as an inclined surface (1 1 2 ) ( 2 12) 'Because the side surface of the substrate (1 1 ) ( 2 1 ) is provided with an inclined surface (; 2 2 ( 2 1 2 )' Therefore, the effect of the semiconductor photovoltaic element die can be increased, and the inclined surface (112) (212) can be formed on the surface of the substrate (1) (21) where the epitaxial layer (12) (22) is not formed. The surface of the layer (12) (22); the surface of the rough seam, which may be a wavy surface, which is formed by the wavy surface generated by the laser scribing, and then formed by scraping off the black layer of the coke by a diamond knife. Referring to FIG. 4, a semiconductor photoelectron device according to the present invention is a private electrode (31), a GaAs epitaxial layer (3 2 ), and a GaAs epitaxial layer (3 2 ).
7GaAS&fe(3 3M-nSm(34)，GaAsM 曰（3 2 )係設於n型GaAs基板（3 3 )之表面，p型電 10 200826316 極（3 1 )係設於GaAs磊晶層（3 2 ) .0 .λ v 之表面，n型電極 (4 )係設於η型GaAs基板（33)之#而，由+4 線與鑽石刀切割所形成之傾 1 s] h μ。、土 1負斜面c 3 5 )可形成於Γ1型GaAs 土板（3 3)未形成有QaA蠢晶展 成日日增Q 3 2 )之表面〇 本發明的切割方法係先 (1 1 )( 2 1 )上以…件“之基板 J上以雷射劃设導引溝槽（1 1 1 ) ( 9 11)，再以鑽石刀切割去除雷射查| a 舌除田射里彳線所造成之焦s厣， 因此可以避免半導體光 …、層 鄉山企4田 仵日日拉表面形成焦黑區域而影 音出光效果。此外，因錯 έ y 係於运射劃設之導引溝槽（1 中切割，因此不易造成鑽石刀的磨損。 本發明的切割方法相較單 、 、 平、、七僅用田射的切割方式，可於车 導脰光電元件晶粒側面自 、 叫田目然形成傾斜面（丄丄2 ) 2 )，進而提高半導體光電元件的出光效率。 上，切割方法係可應用於各式半導體光電元件 又-極體、雷射二極體、光檢測 等半導體元件。 I劳&私池 【圖式簡單說明】 第—圖係為本發明切割方法之流程圖。 圖 第二圖係為本發明切割方法第一較佳實施例之流程 圖 第 圖係為本發明切割方法第二較佳實施例之流程 第/圖係為本發明半導體光f元件之示意圖 弟五圖係為雷射切割方法之流程圖。 11 200826316 第六圖係為鑽石刀切 【主要元件符號說明 (1 1 )基板 (1 1 2 )傾斜面 (13)金屬電極 (21)基板 (2 1 2 )傾斜面 (3 1 ) p型電極 (3 3 ) η 型 GaAs 基 (3 5 )傾斜面 割方法之流程圖。 (111)溝槽 (12)蠢晶層 (211)溝槽 (2 2 )蠢晶層 (3 2 ) GaAs磊晶層 (3 4 ) η型電極 (8 0 )溝槽 (9 0 )溝槽7GaAS&fe(3 3M-nSm(34), GaAsM 曰(3 2 ) is provided on the surface of the n-type GaAs substrate (3 3 ), and p-type electric 10 200826316 pole (3 1 ) is provided on the GaAs epitaxial layer ( 3 2 ) .0 .λ v The surface of the n-type electrode (4) is set on the n-type GaAs substrate (33), and the slope formed by the +4 line and the diamond knife is 1 s] h μ. The soil 1 negative slope c 3 5 ) can be formed on the surface of the Γ1 type GaAs earth plate (3 3) without the formation of QaA stupid crystals increasing daily Q 3 2 ). The cutting method of the present invention is first (1 1 ) ( 2 1) On the substrate J, the guide groove (1 1 1 ) (9 11) is drawn with a laser, and then the laser knife is used to cut the laser to remove the laser | a tongue in addition to the field The resulting focal s 厣 因此 因此 厣 厣 厣 厣 厣 厣 厣 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体 半导体1 cutting, so it is not easy to cause the wear of the diamond knife. The cutting method of the invention is simpler than the single, flat, and seventh cutting method of the field shot, which can be used on the side of the die of the photoelectric component of the vehicle. Forming an inclined surface (丄丄2 2), thereby improving the light-emitting efficiency of the semiconductor photovoltaic element. The cutting method can be applied to various semiconductor photoelectric elements, such as a polar body, a laser diode, a light detecting semiconductor element, etc. I labor & private pool [ BRIEF DESCRIPTION OF THE DRAWINGS The first drawing is a flow chart of the cutting method of the present invention. The second drawing is a flow chart of the first preferred embodiment of the cutting method of the present invention. The flow chart of the example is a flow chart of the semiconductor light f element of the present invention. The fifth figure is a flow chart of the laser cutting method. 11 200826316 The sixth figure is a diamond knife cutting [main component symbol description (1 1 ) substrate ( 1 1 2 ) Inclined surface (13) Metal electrode (21) Substrate (2 1 2 ) Inclined surface (3 1 ) p-type electrode (3 3 ) η-type GaAs-based (3 5 ) inclined surface cutting method. 111) trench (12) stray layer (211) trench (2 2 ) stray layer (3 2 ) GaAs epitaxial layer (3 4 ) n-type electrode (80) trench (90) trench
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