TW200824829A - Laser processing apparatus, laser processing method, manufacturing method of wiring substrate, manufacturing method of display apparatus and wiring substrate - Google Patents

Abstract

A laser processing apparatus includes a support table, a local exhaust device, and a laser light source unit. The support table supports a processing object. The local exhaust device directs laser light into a local exhaust unit in which pressure is locally adjusted over the support table. The laser light source unit outputs the laser light. The local exhaust device is capable of relatively being lifted from the support table by injecting a lift gas to the support table. The processing object includes a multilayer film formed of two or more layers with different materials. An input unit into which reflectance of the processing object is inputted is connected to the laser light source unit.

Description

200824829 IX. Description of the Invention: [Technical Field] The present invention relates to a laser processing apparatus, and a method of manufacturing a wiring substrate by the laser processing method by using a laser processing method using the laser processing apparatus A method of manufacturing a display device including the wiring substrate and a wiring substrate obtained by the laser processing method. [Prior Art] The structure generated based on the mass production assumption has a pattern of pre-determined structures determined in response to the purpose. The structure may be a wiring substrate including a member (a wire or the like) and a device (capacitor, etc.) or a photomask. Further, the structure including the wiring substrate and using the photomask in the manufacturing method may be a display device such as a flat panel display (FPD). " However, a predetermined pattern may not be completely formed in the structure in the manufacturing method and it is often observed that the member and the device are excessively formed (e.g., extended beyond a predetermined area) or insufficiently formed (e.g., unevenly formed in a predetermined area) ).

A display device will be used to describe a particular example. A display device (such as a flat panel display) has an image rotation formed by a plurality of pixels arranged in a two-dimensional matrix (ΧΥ-matrix), and has excellent characteristics such as; I light weight and low power consumption. Based on the classification of the drive system. An active matrix display device that electrically connects the switching elements to the respective pixel electrodes can suppress crosstalk occurring between adjacent materials and thus has an excellent imaging artifact. Therefore, the active matrix display has been researched and developed and widely used as a display device for personal computers (4), television receivers (TVs), and other electronic devices. It should be noted that the flat panel display is classified into a liquid crystal display, an organic EL (electroluminescence) display, etc., depending on the illumination system of 122617.doc 200824829. The active matrix display device includes a transparent insulating substrate, such as a substrate made of glass, on which a lower metal wiring pattern (for example, a plurality of scanning lines), an insulating film, and an upper metal wiring pattern (for example, a plurality of signals) are formed by stacking Wire) to construct the wiring substrate (or matrix array substrate or array substrate).

The lower metal wiring patterns and the upper metal wiring patterns are arranged in a lattice form in a direction perpendicular to each other. The position corresponding to each lattice cell (intersection) can be used as a pixel. The upper metal wiring pattern is connected to a pixel electrode made of a transparent conductive material such as IT〇 (indium tin oxide). Further, each pixel is provided with a switching element having a controllable electrode. In the case where the switching element is a thin film transistor (TFT), the gate electrode is electrically connected to the scanning line, the electrode is electrically connected to the signal line, and the source electrode is electrically connected to the pixel electrode. Local failures such as insulation film defects and metal wiring disconnection often occur in the wiring substrate. Inter-layer shorts can be a specific example of a local fault. In the case of interlayer short circuit, the upper layer wiring and the lower layer wiring are electrically connected at positions where the upper wiring pattern and the lower wiring wiring case cross each other or overlap each other due to the defect of the insulating film and the mixing of the non-insulated foreign matter. If the above partial failure occurs in the wiring substrate, a part of the pixels become pixels that stop illumination or a plurality of pixels become a series of pixels of the milk in the display device, for example, the performance of the image display is greatly improved: although trying to control the manufacturing process ( Reducing foreign substances and suppressing the lack of knowledge) to suppress the occurrence of this local failure, but it is still difficult to completely prevent the occurrence of the failure. A method of correcting an interlayer short circuit at a position where the upper wiring pattern and the lower wiring pattern overlap each other or overlap each other is disclosed in Japanese Laid-Open Patent Publication No. 2001-77198. This method is for correcting the interlayer short circuit at the position where the upper wiring pattern and the lower layer-wiring pattern cross each other or overlap each other. However, since it is difficult to perform laser cutting only on the upper wiring pattern in the interlayer short-circuit portion, the method is complicated by correcting the interlayer short-circuit by the laser cutting _ and the bypass wiring method other than the intersection portion. Further, the method of correcting the short circuit between the upper wiring patterns is disclosed in the unexamined patent application publication No. H11_282. This method is capable of correcting a short circuit between the upper wiring patterns. However, when the area to be cut by the laser also exists in the lower wiring portion, the occurrence of the interlayer short circuit caused between the upper layer and the lower layer cannot always be prevented, since the lower layer should also be cut by laser. Therefore, the effect of the short-circuit portion between the layers should be removed by cutting other regions by laser, and the method is complicated. Φ As described above, the calibration method according to the related art is complicated and has other disadvantages such as a long manufacturing cycle. Further, in the related correction method, the film thickness of the multilayer film in the wiring substrate has been measured to obtain a device having a small size from the viewpoint of miniaturization and thin device. • On the other hand, the inventors of the present application have found that if the correction is made based on the determined film thickness, the laser treatment can only be optimized within the range in which the correction system is determined by the film thickness. In particular, the inventors of the present application have discovered that the wavelength of the laser or the like should be selected to perform optimal laser processing without limiting the established film thickness. 122617.doc 200824829 SUMMARY OF THE INVENTION It is desirable to provide a simplified and reliable laser processing method for obtaining improved manufacturing yield and reducing manufacturing cycle; a method of manufacturing a wiring substrate using the laser processing method; and manufacturing a display device including the wiring substrate Method and laser processing device. According to an embodiment of the present invention, a laser processing apparatus including a support table, a partial exhaust device, and a laser light source unit is provided. Supporting table

Support one to handle the object. The local exhaust device directs the laser light into a partial exhaust sapon in which the pressure is locally adjusted on the support table. The laser light source unit outputs the laser light. The local exhaust device can be lifted from the support table by raising the air to the support table. The processed article comprises a multilayer film formed from two or more layers having different materials. An input unit to which the reflectance of the processed object is input is connected to the laser light source unit. In accordance with another embodiment of the present invention, a laser processing method for processing an object by laser radiation is provided. The laser processing method includes the steps of laser processing based on the reflectivity of two or "upper/multilayer films formed of layers of different materials" and the processing of the processed object by the laser light. For example, there is provided a method for manufacturing the wiring substrate by laser processing by using a multilayer film formed by a layer of two or two different wiring materials according to the present invention. The selected wavelength is produced by the multilayer film constituting the wiring substrate. According to another embodiment of the present invention, a method of manufacturing a display device including a wiring base 122617.doc 200824829 is provided. The wiring substrate is manufactured by forming the multilayer film of the wiring substrate by laser light irradiation of a wavelength selected based on a reflectance of a multilayer film formed of two or more layers having different materials. According to another aspect of the present invention For example, a wiring substrate is provided which is selected to have a wave selected based on a reflectance of two or more layers having different materials from each other. Long laser light is irradiated to the multilayer film. According to an embodiment of the laser processing apparatus of the present invention, the laser processing apparatus includes a support table, a partial exhaust device, and a laser light source unit. The local exhaust device directs the laser light to a local exhaust unit, wherein the pressure is locally adjusted on the support unit, that is, the laser light source unit outputs the laser light. The local exhaust device can The workpiece is lifted from the support table by injecting the lift gas into the support table. The processed object includes a multilayer film formed of two or more layers having different materials. The reflection of the processed object is input into the crucible. The input unit is connected to the f-light source unit. Therefore, a simplified and reliable laser processing can be performed, thereby improving the manufacturing yield and reducing the manufacturing cycle. According to an embodiment of the laser processing method of the present invention, based on processing an object The laser light wavelength is selected by the reflectivity of a multilayer film formed of two or more layers having different materials. Therefore, a simplified and reliable laser treatment can be performed. Thereby, the manufacturing yield is improved and the manufacturing cycle is reduced. According to an embodiment of the method of manufacturing a wiring substrate of the present invention, the wiring substrate is formed by a reflection based on a multilayer film formed of two or more layers having different materials. The laser light of the wavelength of the selected wavelength constitutes the multilayer substrate of the wiring substrate 122617.doc 200824829 at a reliable laser. Therefore, simplification and rationalization can be performed, thereby improving the manufacturing yield and reducing the manufacturing cycle. An embodiment of a method of a display device for forming a wiring substrate, a multilayer film, by f-optic radiation having a wavelength selected based on a reflectance of a multilayer film formed of two or more layers having different materials. Manufacturing. Therefore, a simplified and reliable laser processing can be performed, thereby improving the manufacturing yield and reducing the manufacturing cycle.

According to an embodiment of the wiring substrate of the present invention, the wiring substrate is manufactured by irradiating the multilayer germanium with laser light of a wavelength selected based on a reflectance of a multilayer film formed of two or more layers having different materials from each other. Therefore, the short circuit can be reliably removed and the characteristics can be improved. [Embodiment] Hereinafter, embodiments of the invention will be described with reference to the drawings. Embodiment of Laser Processing Apparatus A laser processing apparatus according to an embodiment of the present invention will be described below with reference to the drawings. It should be noted that the embodiment of the laser processing apparatus is described using a device for manufacturing a wiring substrate in which, for example, a wiring substrate such as a TFT (Thin Film Transistor) substrate is used as a processing article. 1A and 1B show schematic views of a laser processing apparatus in accordance with an embodiment of the present invention. The laser processing apparatus 1 according to this embodiment is a device having at least a laser engraving function and, in detail, according to this embodiment, the laser processing apparatus i has a film deposition based on a laser CVD (Chemical Vapor Deposition) method Features. As shown in Fig. 1A, the laser processing apparatus 1 according to this embodiment includes a 122617.doc • 11·200824829 and a local exhaust device 4. The support table 2 is for displacing the processing object 3 with the processing object 3. The local exhaust device is formed (here, a portion of the etched film is deposited and etched, that is, the local processing will be at the center of the local exhaust device 4 The lower portion is used as a local space (the partial exhaust portion 6 which will be described later), in which the pulsed laser light I from the laser source unit (not shown) is condensed and introduced and also locally regulated. The light source unit is connected to the input unit, and the reflectivity of the multilayer film forming the processed object 3 is input into the input unit. The head is arranged to face the processed object 3 selected on the cutting table 2 and partially form a film thereon: It should be noted that the processed article 3 is a wiring substrate including at least a multilayer film formed of two or two layers made of different materials.

The purge gas supply unit 7 that supplies the purge gas to the atmosphere is connected to the office: the exhaust portion 6. The raw material supplied independently of the purge gas supply unit 7 is supplied 705 and supplied with the material gas. The raw material supply unit recognizes that the purge gas supply unit 7 is connected to the partial space via the raw material gas passage 17 and the purge gas passage, respectively, both of which are provided in the local exhaust device 4). The opening of the purge gas passage 18 facing the partial exhaust portion 6 is slightly inclined toward the transparent window 19, thereby suppressing contamination of the transparent window 19. Again, if

The element (not shown) is connected to the local exhaust portion 6, and the exhaust gas balance between the exhaust units H is adjusted to generate an updraft in the local exhaust portion. The updraft can inhibit redeposition of the material removed by (4) and vaporized onto the treated article 3. Local exhaust device 4. Compressed argon (Ar) gas or nitrogen (N2) Further, a compressed gas supply unit 9 is connected to the reduced gas supply unit 9 by injecting a pressure 122617.doc -12-200824829 gas into the support table 2 under static pressure. Lift up the local exhaust device 4. The compressed gas from the compressed gas supply unit 9 is directed toward the local exhaust device 4 via the annular compressed gas supply passage 14 and the porous gas permeable membrane 丨 3 serving as supply passages and vent holes respectively at the opening portions of the annular compressed gas supply passage 14 The support table 2 is uniformly injected. The rise of the local exhaust equipment (partial film deposition/etching head) 4 is determined by selecting the pressure and flow rate of the compressed gas and selecting the balance between the amounts of gas discharged by the respective exhaust units. The stability of the lift can be improved by selecting the gas viscosity. Specifically, in the laser processing apparatus 1 according to the embodiment of the present invention, the local exhaust apparatus 4 has a static pressure floating mat arrangement. Depending on the static pressure float arrangement, the local exhaust device 4 can be relatively displaced for the workpiece 3 provided on the support table 2. The floating rigidity of the static pressure floating can be improved by dividing the compressed gas supply unit 9 and the exhaust unit 1 (the external exhaust unit 5, the local exhaust unit 6, the purge gas supply unit 7, and the like). Here, the adsorption between the local exhaust device 4 and the processing object 3 represents a floating rigidity. If the floating rigidity is not, the height between the local exhaust device 4 and the processed object 3 may become insufficient or The mechanical or dynamic stability of the local device 4 may become insufficient. Therefore, 靡 maintain sufficient floating rigidity. '' In practice, by static pressure floating, the hoisting device 4 support 2 liters is raised to a height greater than the thickness of the treated article 3. Therefore, at least one of the moving support 2 and the partial exhaust apparatus * is smoothly inserted below the local exhaust apparatus 4.彳 将 将 处理 η 汉 : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : : A stable lift can be obtained, and the "air curtain" can be used to reduce the amount of flow or vaporized matter or dust scattered in the local exhaust unit 6 by the laser to reduce the amount of air generated in the local exhaust unit 6. It is possible to maintain the environment around the device (cleaning room, etc. However, it is particularly preferable to use a inert gas to form a space between the local exhaust device 4 and the support table 2 by static pressure floating.

Further, in the case where the porous gas permeable membrane 13 is made of a porous material having a ruthenium porosity, the local venting apparatus can be adjusted, for example, by selecting the amount of the inert gas to be injected in a wide range of about several micrometers to 1 GG micrometer. The height, that is, the amount of the local exhaust device 4 is raised from the support table 2. The porosity of the porous gas permeable membrane is not limited to the above 40% porosity and may be selected as appropriate. Further, the material of the porous gas permeable membrane U is not limited to porous rotation, and the desired material can be selected from materials such as porous metal, ceramics, and synthetic resin. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a bottom plan view showing a conventional exhaust apparatus 4 of a laser processing apparatus according to an embodiment of the present invention. The local exhaust device 4 includes an annular suction groove at its bottom sill (exhaust air passages = 5 and 16. the annular suction groove 15 and the over-compressed gas in the ejector pin 2 and the venting unit 11 gas supplied to the processing object 3 (the raw material gas, the purifying gas fluttering the above part (4) (the partial exhaust portion shaft faces the bottom of the local exhaust device 4 and occupies a substantially cylindrical shape from the transparent window Η and the transmission = 〇 to the height of the processed object 3 The body space is formed. A partial space (local exhaust portion 6) is provided in a substantially concentric dome portion formed by the suction channel formed by the passage 15 and the end (four). According to an embodiment of the present invention, the f-processing device 1 Convergence, for example, from a laser source device (not shown) by a suitable device (such as 122617.doc 14 200824829 objective lens), and introducing light into the local via via transmission aperture 2 with transparent window 19 In the gas portion 6. Subsequently, the laser processing apparatus performs a process of forming a thin film by laser CVD (Chemical Vapor Deposition) and a process of removing the thin film by laser in the local exhaust portion 6. Aspect, although it is possible to choose a pulsed laser The required pulse width of £, but preferably a pulse width of less than 10 picoseconds should be selected and it is particularly preferable to select a pulse width of 1 picosecond or less called a femtosecond laser. If the pulse width is longer than = picosecond, then The heat accumulates in the radiating portion of the treated article 3 and diffuses in the treated article 3, causing the radiating portion to melt at its peripheral portion which should normally be removed. It is often observed that the melting occurs to cause vaporization of matter and dust. The shorter irradiation time per pulse of laser light may suppress the occurrence and progress of melting by supplying dense light energy during a period shorter than the period in which thermal diffusion occurs. It should be noted that materials and components to be treated should be considered. More preferably, the pulse width is selected. For example, when the material intended to be removed from the processed article 3 (for example, the portion of the over-formed wire) is made of aluminum (A1), it is preferred to select, for example, about 2 skins. The pulse width in the range of seconds to 1 〇 picosecond is used as the appropriate pulse width. Also, the wavelength of the desired value can be selected as the wavelength of the pulsed laser light z. On the other hand, the spoke of the object is processed. The decrease in the peripheral temperature caused by melting is determined by the diffraction limit and the amount of decrease tends to increase with the increase of the wavelength of the pulsed laser light. Therefore, in order to reduce the amount of drop at the boundary of the laser cutting portion, it is necessary to select a short wavelength. Laser light. For example, laser light having a smaller wavelength of less than 39 〇 nm 4 can be applied to the present application. 122617.doc -15- 200824829 Here, a schematic description will be shown in the laser processing apparatus of Figure iamb. The operation of forming a thin film by laser CVD. First, the supply of the compressed gas is supplied to the collapsing gas supply, and the compressed gas is supplied to the compressed gas supply passage 14. Then, the (4) gas is injected through the porous gas permeable membrane 13 The processing object 3 is operated by the white _* 仟Μ self-processing object 3 to lift up the local exhausting device. At this time, the material is placed at a position directly below the local venting apparatus 4 at the position of the boring tool to prepare a lifting platform (not shown) having a thickness equal to the thickness of the processing object 3 and the material processing object 3 is positioned. The local exhaust device 4 that has been placed on the I-lift platform can be lifted and moved to the top of the treatment object. ▲: When the second object moves on the processing object 3, the local exhaust device 4 is indiscriminate. It is preferred to avoid contact with the processing article 3. In this state, 'from the raw material supply source via the raw material gas passage 17' 5 for the amine, the supply of the raw material gas for film deposition to the local exhaust unit to the partial deposition of the film to the processed article 3 ). In addition, through the purge gas channel 18 from the Pan / Bu touch μ &# 时乱体 Supply early 7 supply purified gas to the local =, from the laser light source laser radiation source z radiation = film accumulation) ... shot Red passes through the wheel hole 2. The transparent ruthenium decomposition causes the helium unit 6 to lightly irradiate the partial portion, whereby the CVD film is deposited on a partial portion of the processed article 3 based on the material gas. Laser processing method 4A / A 1 皮 · u wiring substrate manufacturing method and wiring substrate embodiment, _ person, will be described in accordance with one embodiment of the present invention φ ^ field processing method. The method will be described with reference to the case of a laser patterning correction (manufacturing) wiring base 122617.doc 200824829. Further, the above-described laser processing apparatus (wiring substrate manufacturing apparatus) is used as a laser processing apparatus.

As shown in the top view of Fig. 2A and the cross-sectional view of Fig. 2B, the laser processing method (wiring substrate manufacturing method) according to the embodiment of the present invention can be applied to the case where the wiring substrate is corrected. Here, since the interlayer insulator 22 in the multilayer film formed by stacking the lower layer wiring 21, the interlayer insulator 22, and the upper layer wiring 23 is defective, it has appeared at the intersection between the layer wiring 21 and the upper layer wiring 23 having different heights. Short circuit portion (interlayer short circuit) 24. In particular, the laser processing method according to an embodiment of the present invention can be applied to a case where a portion including the short-circuit portion 24 is etched by laser etching under a pre-condition. As shown in the top view of FIG. 2A and the cross-sectional view of FIG. 2C, if necessary, the removed laser cutting portion 25 is buried to form the defect correction portion %. Further, as shown in the top view of Fig. 3A and the cross-sectional view of Fig. 3B, the laser processing method (wiring substrate manufacturing method) according to the embodiment of the present invention can be applied to the case of correcting the wiring substrate. Here, the short-circuit portion (inter-layer short-circuit and intra-layer short-circuit m) includes a multilayer under-layer wiring 3ι and a plurality of upper-layer wirings 33 formed by stacking the lower layer wiring 31, the interlayer insulator 32, and the upper layer wiring 33; and the short-circuit is due to mixing The matter may occur. The detailed description may be such that the laser processing method (10) removes the portion including the short-circuit portion 34 from the laser money (10) under predetermined conditions as the laser cutting portion 35. As shown in the top view and figure of Fig. 3A As shown in the cross-sectional view of 3C, if necessary, the defect correction portion % is formed by the buried laser cutting portion 35. In the laser processing method of the embodiment of the present invention, the compressed gas is firstly supplied from the I-shrinking gas supply unit 9 via the porous The gas permeable membrane 13 is injected into the treated article 3 to lift the local exhaust device 4 from the treated object 3 by a predetermined space by 122617.doc 200824829. In this case, the region of the processed object 3 to be etched is irradiated with the laser light L and by the thunder Ejection etching removes portions of the formed film pattern (eg, portions of over-formed wires). In that case, the laser light I should preferably have 10 picoseconds as described above - or Pulsed laser light having a small pulse width. Further, it is preferable to select the wavelength of the pulsed laser beam and the film thickness φ and reflectance of the multilayer film which becomes the Korean portion of the object to be processed 3. Further, it is preferable to use this wavelength (if necessary) The data is input into the input unit operating in conjunction with the laser source unit in conjunction with film thickness and reflectance. This data is reflected in the laser processing. Figure 4A shows a specific example of a multilayer film comprising a stacked structure and laser-engraved. In detail, the change in reflectance is determined in advance depending on the film thickness of the nitride nitride (SiN) layer and the yttrium oxide (Si0) film corresponding to the interlayer insulator. The processing is performed as follows: by corresponding to higher than visible light The laser light having a wavelength of the reflectance of the average reflectance of the region has a multilayer film having a film thickness indicating a reflectance higher than the average reflectance in a plurality of wavelengths. A specific example will be described in more detail. 4B shows the measurement obtained when the reflectivity of the interlayer insulator is in the case where the tantalum nitride layer has a film thickness of 150 nm and the film thickness of the oxidized stone layer has a film thickness. Fruit (reflection spectrum). Although the overall shape of the reflection spectrum varies depending on the film thickness, at this thickness, the reflectance at the wavelength of 3 9 远 is much lower than the average reflectance of the visible region (4 〖%). The reflectance becomes 22% and the remaining 78% can be absorbed by the Mo (molybdenum) layer. 122617.doc -18- 200824829 Therefore, under this film thickness condition, there is a possibility that the molybdenum (Mo) under the interlayer insulator can be seriously damaged. On the other hand, when a multilayer film having a stacked structure (thickness condition) as shown in Fig. 5A is laser-etched, the reflection spectrum changes as shown in Fig. 5B and the reflectance at a wavelength of 390 nm shows far. Higher relative to the average reflectance (44%) in the visible region. That is, since the reflectance becomes 64% and the remaining 36% can be absorbed by the Mo layer, the energy absorbed by the Mo layer becomes less than half that in the case of the arrangement shown in Fig. 4A. Therefore, damage to the lower layer may be suppressed. Therefore, under this thickness condition, when the material is treated with pulsed laser light having a wavelength of 390 nm, the damage to the molybdenum layer can be reduced. Therefore, it is possible to correct the short circuit of the material while maintaining the underlying wiring as shown in Figs. 2C and 3C. Here, it is preferred to select the laser energy density from a value obtained by the threshold energy of the upper wiring material. Since molybdenum (Mo) and aluminum (A1) are considered to be materials for wires and the threshold value of Mo is 0.09 J/cm2 and the threshold value of A1 is 0.08 J/cm2, it is preferable to be close to the threshold. The material is treated at an energy density, i.e., an energy density of 0.1 J/cm2 or less. If the material is treated at an energy density above the other value, there is a greater likelihood that the underlying layer will be damaged and there is a risk that the selective treatment will not be performed. Also, when the material is processed at an energy density lower than the other value, there is a greater possibility that the upper film will not be completely removed. It should be noted that the laser cutting zone should preferably be corrected with a high degree of reliability about 1 μm from the short-circuited portion. Further, as shown in the top view of Fig. 6A and the cross-sectional view of Fig. 6A, the laser processing method (the method of manufacturing the wiring substrate) according to the embodiment of the present invention can be applied to the following case by 122617.doc -19-200824829. Here, the New Zealand section (inter-layer short-circuit and layer-in-layer wiring 61 and it I攸I»a from & _ short circuit) 64 packs

If necessary, the defect portion 66 〇 ' is formed by burying the laser cutting portion 65 and its correction portion, in detail, not only the laser processing method according to the embodiment of the present invention should be

condition. Therefore, the short circuit can be corrected under the control of the damage of the upper insulating film. In this case, the change in reflectance depending on the film thickness of the tantalum nitride (SiN) layer and the yttrium oxide (Si) film corresponding to the upper insulating film is measured in advance. The processing is performed by irradiating a multilayer film having a film thickness indicating a reflectance lower than the average reflectance by at least a portion of the plurality of wavelengths by laser light having a wavelength corresponding to a reflectance lower than an average reflectance of the visible light region. . That is, the wavelength of the laser light is selected so that the reflection of the insulating film having a specific film thickness can be suppressed. Specific examples will be described in more detail. First, FIG. 7B shows the measurement results obtained when the reflectance of the upper insulating layer is simulated in a stacked structure in which the thickness of the tantalum nitride layer is 200 nm and the thickness of the tantalum oxide layer is 1 μm as shown in FIG. 7A (reflection). spectrum). Although the overall shape of the spectrum varies depending on the film thickness, at this thickness, the reflectance of the 390 nm wave 122617.doc -20- 200824829 is higher than the average reflectance of the visible light region (50%). That is, the reflectance becomes 57% and the remaining 43% can be absorbed by the Ti (titanium) layer. Therefore, according to this thickness condition, there is a large possibility that it is difficult to handle the titanium layer located under the upper insulating layer. On the other hand, in the interlayer insulating film having the stacked structure (thickness condition) as shown in Fig. 8A, the reflection spectrum is changed as shown in Fig. 8B and the reflectance at the wavelength of 390 nm becomes much lower than the average reflectance in the visible light region. The relative minimum of (53%). That is, the reflectance in the upper insulating film becomes 9·5. /. And the remaining 90.5% can be absorbed by the Ti layer (upper layer wiring). Therefore, in this case, compared with the case of the arrangement shown in FIG. 7A, the energy absorbed in the Ti layer is larger than half of the laser light, so that although the Ti layer is covered by the upper insulating layer, it is also possible to selectively destroy ( Selectively remove) the Ti layer. According to this expiration condition, when the material is treated with pulsed laser light having a wavelength of 390 nm, the energy absorbed by the titanium (Ti) layer can be increased and used to correct the short-circuit portion (short circuit) while maintaining the underlying wiring. Processing becomes possible. Embodiment of display device manufacturing method

The backlight of the device. The device is divided into a direct light display device and an edge light (side light) display device.

122617.doc ^ ^ Based on the arrangement of the light source device including the fluorescent lamp, the arrangement of the light source devices after the display surface (front) is displayed. Since the -21-200824829 f-light-emitting display device can directly use light from a light source device, it is advantageous for efficiency and large scale, but it is difficult to reduce the thickness and its power consumption is large. On the other hand, the edge light display device has an acrylonitrile substrate light guide portion (light guide) and an arrangement in which the light source device is located on the rear side of the display surface. Since the light system is diffused by the light guide portion, the edge light display device is advantageous for miniaturization, thickness reduction, and low power consumption, but the large screen display may be subjected to weight increase. Based on the assumption that the optical device can produce reflected light, the edge light display device is further divided into a light display device in which the backlight display device and the light source device are located behind the light guide portion before the light guide portion. According to the laser processing method of the above embodiment, it is possible to manufacture various display devices via the manufacture of the wiring substrate without being limited by any of these types. A specific example of the display device obtained by manufacturing the above wiring substrate will be described with reference to FIG. As shown in FIG. 9, the display device 41 includes a light source device 42. A fluorescent lamp 47 is provided as a light source in a light guiding portion 46 made of a resin in the light source device 42. In accordance with an embodiment of the present invention, light source device 42 includes a diffuser sheet 49 at a portion that is closest to optical device 43. The diffusion sheet 49 is adapted to uniformly guide the surface light from the fluorescent lamp 47 to the optical device 43. A reflector 44 is provided on the rear side of the light source device 42. Also, if desired, a reflector 45 similar to one of the reflectors 44 is provided on the side of the light guiding portion 46. 122617.doc -22· 200824829 It should be noted that in the light source device 42 according to the embodiment of the present invention, various transparent resins can be used as the light guiding portion in addition to the epoxy resin, the polyoxygen resin, and the urethane resin. Resin. Further, the display device 41 includes an optical device (e.g., liquid crystal device) 43 capable of outputting predetermined output light by adjusting light output from the light source device 42. The above-mentioned light source device 42 is located behind the optical device 43 and the light system is supplied from the light source device 42 which is a direct light backlight to the optical device 43. The optical device 43 includes a deflecting plate 50, a TFT (Thin Film Transistor) glass substrate 51, a dot electrode 52 provided on the surface of the glass substrate 51, a liquid crystal layer 53, and an orientation deposited on the front and rear sides of the liquid crystal layer 53. A plurality of black matrices 56 on the film 54, an electrode 5 5 and the electrode 5 5 . Furthermore, the optical device comprises a first (red) color filter 57a, a second (green) color filter 571 > and a third (blue) color filter corresponding to the pixels provided in the black matrix 56. 57c and a glass substrate 58 and a deflector 59 are provided at a distance from the black matrix 56 and the color filters 57 & 57. All components are positioned in this order from the side of the proximity optical device 43. Here, the deflecting plates 50 and 59 are adapted to form light that vibrates in a particular direction. The TFT glass substrate 51, the dot electrode 52, and the electrode 55 are provided to convert the liquid crystal layer 53 which passes only the light vibrating in the characteristic direction. Since the alignment film 54 is also provided, the tilt of the liquid crystal molecules in the liquid crystal layer 53 can be aligned in a specific direction. Further, since the optical device 43 includes the black matrix 56, the contrast of the light respectively output from the color filters 57a to 57c corresponding to the respective colors can be improved. It should be noted that the black matrix 56 and the color filters 57a to 57c are attached to the glass substrate 58. 122617.doc -23- 200824829 According to the laser processing method (wiring substrate manufacturing method) of the above-described embodiment of the present invention, at least the TFT glass substrate 51 to the electrode 55 in the array can be formed, for example, by using the obtained wiring substrate. Therefore, it is possible to correct a dead pixel or a series of defective portions and manufacture a light source device and a display device. Therefore, according to the light source device and the display device including the wiring substrate, the yield can be improved and the manufacturing cycle can be reduced. EXAMPLES An example (manufacturing result) of a method of manufacturing a wiring substrate (array substrate) will be described as a specific example of a laser processing method according to an embodiment of the present invention. Using the apparatus shown in Figs. 1A and 1B, a thin film transistor (TFT) substrate was used as a processing object and subjected to laser processing. First, argon (Ar) or nitrogen (N2) inert gas supplied from the compressed gas supply unit 9 is injected into the support table 2 via the porous gas permeable membrane 13 in the local exhaust apparatus 4. The partial venting device 4 is raised to a thickness higher than the thickness of the treated article 3, for example, the height from the support table 2 is 100 μm. Therefore, even when the processed article 3 is slightly warped or shaken, it is possible to prevent the local exhausting device 4 and the processed article 3 from coming into contact with each other in the next process. Next, the support table 2 is moved in the horizontal direction and the processed object 3 is inserted into the space between the partial exhaust device 4 and the support table 2. Subsequently, the height of the local exhausting device 4 is selected so as to be 2 〇 μη from the top of the workpiece 3, and the support table 2 is moved in the horizontal direction so that the object 3 can be irradiated with pulsed laser light at the portion where the short circuit occurs. Therefore, the relative position between the local exhaust device 4 and the processed object 3 is adjusted. Secondly, only 5,000 pulses of pulsed laser light Z having a radiation beam shape of 10 square microns were output from a pulsed laser source at a repetition rate of 100 Ηζ at a pulse width of 3 pico to 122617.doc -24 to 200824829 seconds. The object 3 is irradiated with the pulsed laser light Z through the transparent window 19. It should be noted that the laser light I is reshaped into a beam shape by a slit, and the processed object 3 is processed while observing the objective lens with an operating distance of 15 mm by a radiation observation unit at a magnification of 50 times. Figures 10A and 10B show photomicrographs obtained when a processed article having the underlying layer and interlayer insulator reflective features shown in Figure 4B is processed by laser and observed under a microscope. From these results, it was confirmed that the lower wiring was broken. On the other hand, Figs. 11A and 11B show microphotographs obtained when a processed article having the lower layer and interlayer insulator reflection characteristics shown in Fig. 5B is processed by laser treatment and observed under a microscope. From these results, it was confirmed that the upper layer could be selectively removed only without affecting the lower layer. The leakage current between the upper wirings in the wiring substrate processed by the laser is measured for the wiring substrate in which the upper insulating film is formed on the upper wiring (see 6A to 6C). Figure 12 shows the measurement results in the form of a semi-logarithmic graph in which only the vertical axis exhibits leakage current in the logarithmic diagram. In the wiring substrate which obtains the reflection characteristic of the upper insulating film as shown in FIG. 8B, since the short-circuited portion is removed by the laser processing, the resistance of the upper-layer wiring is unchanged as shown by the solid line a in FIG. 12 (maintaining high resistance to suppress Leakage current). Therefore, it is confirmed that only the upper layer can be selectively removed. On the other hand, in the wiring substrate which obtains the reflection characteristics of the upper insulating film as shown in Fig. 7B, after attempting to remove the short-circuited portion by the laser processing, a large-scale leakage current is generated as shown by the solid line 6 in Fig. 12. Therefore, confirm that the short-circuited part has not been removed. $122617.doc -25- 200824829 The above-described embodiments and examples of the laser processing method, the wiring substrate manufacturing method, and the display device manufacturing method according to the present invention are as follows, by using the above-described laser processing apparatus The processed article is processed (manufactured) in a simpler and more reliable manner than the related art. Therefore, improvement in manufacturing yield and reduction in manufacturing cycle can be obtained. Further, according to the laser processing method and other embodiments of the present invention, it is possible to suppress the occurrence of defects in the interlayer short circuit and to reduce the defective product which should be discarded. because

This can improve productivity and reduce manufacturing costs. Further, although the above-described melting is affected by the bonding characteristics of the materials constituting the member member of the processing member, a material having excellent thermal conductivity such as metal tends to swell around the boring tool and increase the above-mentioned scattering distance. Therefore, the laser processing method according to the embodiment of the present invention can significantly reduce dust when a member having excellent thermal conductivity is to be processed. Further, since the wiring substrate thus obtained is manufactured, the laser light irradiation on the multilayer film is performed by selecting the wavelength of the moving light based on the reflectance k of the multilayer film formed of two or more layers having different materials. . Therefore, the short-circuit portion can be reliably removed and the features can be improved. It should be noted that the amounts of materials and materials used in the description of the above embodiments and the numerical conditions such as the processing time and dimensions described are only preferred examples and the dimensions and shapes provided in the respective drawings for the purpose of explaining the present invention. And the arrangement relationship is schematic. That is, the invention is not limited to the embodiments. For example, if the laser processing apparatus according to the embodiment of the present invention includes a heating device (not shown) for heating the object member and the inert gas, the occurrence of dust is suppressed because the vaporized material is generated by the laser radiation. Week 122617.doc -26- 200824829 A decrease in the circumference of the iffei causes the vaporized material to solidify and cause redeposition. The heating device can be prepared by changing the laser processing device so as to be inside or outside the local processing head 4 and the landing table 2. Need to be = = when the heating temperature (for example, about 200. 〇, so that the thermal load can not be applied excessively to the upper porous gas permeable membrane 13 and the raw material supply unit 5. If the heating device is provided on the local treatment head 4, it may be avoided The temperature of the member and the inert gas is lowered. # Further, the interlayer insulator is not limited to the arrangement shown in Figs. 4A, 5A, 7 and 8 and may change the number of interlayer insulators, possibly by the formation of the underlying wiring and the interlayer insulator. The multilayer film reflectivity can be optimized to optimize the film thickness of the individual layers in a manner compatible with the relative maximum peak of the laser wavelength used to select an optimum processing condition similar to that of the embodiments of the present invention. In the processed article of the film, the stacked structure (many layers and materials) of the upper insulating film is not limited to the above-described stacked structure. In detail, the processing (manufacture) includes a stacked structure having a stack structure of not less than the above-mentioned stacked structure. In the process of the article, an optimum processing condition similar to the embodiment of the present invention can be selected. Therefore, the similar result can be obtained by the multilayer film of the wiring. The reflectance and the reflectance of the upper insulating film on the multilayer film can be obtained by optimizing the thickness of each layer film in a manner suitable for the relative minimum peak of the laser wavelength used. Therefore, the present invention can be carried out as described above. Modifications and changes. Those who are interested in this technology should understand that the visual design requirements and other factors are subject to j-type corrections, combinations, sub-combinations and modifications, as long as they are within the scope of the patent scope or its equivalent. 122617.doc • 27· 200824829 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a schematic view showing an arrangement of a laser processing apparatus according to an embodiment of the present invention; and FIG. 1B is a view showing use with the laser processing apparatus shown in FIG. 1A. 2A to 2C are explanatory views respectively provided for explaining a laser processing method according to an embodiment of the present invention. Figs. 3A to 3C are diagrams for explaining a laser according to an embodiment of the present invention, respectively. Figure 4A is a schematic diagram showing an arrangement of examples of a multilayer film; and Figure 4B is an explanatory diagram showing a reflection spectrum in the arrangement shown in Figure 4A. A schematic diagram showing an arrangement of another example of a multilayer film; and FIG. 5B is an explanatory diagram showing a reflection spectrum in the arrangement shown in FIG. 5 8. FIGS. 6A to 6C are respectively for explaining lasers according to an embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Figure 7A is a schematic diagram showing an arrangement of still another example of a multilayer film; and Figure 76 is an explanatory view showing a reflection spectrum in the arrangement shown in Figure 7A. Figure 8A is a view showing a multilayer film. Figure 8B is an explanatory diagram showing the reflection spectrum in the arrangement shown in Figure 8 8. Figure 9 is an explanatory diagram provided for explaining the display device. Fig. 11A and 11B are respectively microscopic views showing the results of laser treatment according to an embodiment of the present invention, respectively, for explaining the measurement results provided for explaining the laser processing method according to the embodiment of the present invention. Fig. 12 is an explanatory diagram provided to explain the measurement result of the leakage current. 122617.doc -28- 200824829 [Main component symbol description]

1 Laser processing device 2. Support table 3 Processing article 4 Local exhaust device 5 Raw material supply unit / gas supply source 6 Local exhaust portion 7 Purified gas supply unit 9 Compressed gas supply unit / gas supply source 10 Exhaust unit 11 Gas unit 13 Porous gas permeable membrane 14 Compressed gas supply channel 15 Exhaust channel / annular suction groove 16 Exhaust channel / annular suction groove 17 Raw material gas channel 18 Purified gas channel 19 Transparent window 20 Transmission hole 21 Lower layer wiring 22 Interlayer insulator 23 Upper wiring 24 Short-circuit part 25 Laser cutting part 122617.doc -29- 200824829 26 Defect correction part 31 Lower layer wiring 32 Interlayer insulator 33 Upper layer wiring 34 Short-circuit part 35 Laser cutting part 3 6 Defect correction part 41 Display unit

42 Light source device 43 Optical device 44 Reflector 45 Reflector 46 Light guide portion 47 Fluorescent lamp 49 Diffuser sheet 50 Deflection plate 51 TFT glass substrate 52 Dot electrode 53 Liquid crystal layer 54 Orientation film 55 Electrode 56 Black matrix 57a First (red Color filter 57b Second (green) color filter 122617.doc -30- 200824829 57c Third (blue) color filter 58 Glass substrate 59 Deflection plate 61 Lower layer wiring 62 Interlayer insulator 63 Upper layer wiring 64 Short circuit Part 65 Laser Cutting Section 66 Defect Correction Section 67 Upper Insulation Film L Laser Light

122617.doc -31-

Claims (1)

200824829 X. Patent application scope: 1. A laser processing device comprising: a support table for supporting a processing object; a local exhaust device for guiding laser light to a local exhaust unit, a pressure in the local exhaust unit is adjusted on the support table; and a laser light source for outputting the laser light, wherein the local exhaust device can be self-injected into the support table The processing table is relatively lifted; the processing object comprises a multilayer film formed of two or more layers having different materials; and an input unit to which the reflectivity of the processing object is input is connected to the laser light source unit. 2. A laser processing method for processing an object by laser light radiation, comprising the steps of: selecting a wavelength of the laser light based on a reflectivity of a multilayer film formed of two or more layers having different materials; The processed object is irradiated with the laser light to perform laser processing. 3. The laser processing method of claim 2, further comprising the steps of: pre-measuring a change in the laser light having a reflectance at a plurality of wavelengths depending on a film thickness of the multilayer film; selecting a thickness of the f-layer film , causing at least a portion of the plurality of wavelengths to exhibit a reflectance of two visible first-order reflectances; and a wavelength corresponding to a reflectance higher than the average reflectance of the umbrellas Ray 122617.doc 200824829 The light is irradiated to the multilayer film to process the processed article. 4. The laser processing method according to claim 2, further comprising the following steps: pre-measuring the reflectance depending on the film thickness of the multilayer film a change in the laser light at a plurality of wavelengths; selecting a thickness of the multilayer film such that a relative maximum reflectance value is obtained over at least a portion of the plurality of wavelengths; and laser light having a wavelength corresponding to the relative maximum value The multi-layer film is irradiated to process the processed object. 5. The laser processing method of claim 2, wherein the laser light is pulsed laser light having a pulse width of 10 picoseconds or more /J\ 〇6. The laser processing method of claim 2, wherein the laser light is pulsed laser light having an energy density of 1 J/cm 2 or less per pulse. 7. The laser processing of claim 2 The method, wherein: the multilayer film represents an intersection, wherein different conductive members having different heights cross each other via an insulating film. 8. The laser processing method of claim 2, further comprising the steps of: Providing the processed object having an upper insulating film; - pre-measuring a change in the laser light having a reflectance at a plurality of wavelengths depending on respective thicknesses of the upper insulating film and the multilayer film; selecting the upper insulating film and The respective thicknesses of the multilayer film are such that at least a portion of the plurality of wavelengths exhibit a reflectance that is lower than an average reflectance of the visible light region; and 1226I7.doc 200824829 by wavelengths corresponding to reflectances below the average reflectance The laser light is applied to the upper insulating film and the multilayer film to process the processed object. 9_ The laser processing method of claim 2, further comprising the following steps: Providing the processed object having an upper insulating film on the film; preliminarily measuring the change in the laser light having a reflectance at a plurality of wavelengths depending on the thickness of each of the upper insulating film and the multilayer film; selecting the upper insulating film And respective thicknesses of the multilayer film such that at least a portion of the plurality of wavelengths obtain a relatively minimum reflectance value; and radiating the upper insulating film and the plurality of layers by laser light having a wavelength corresponding to the relative minimum value Membrane for processing the processed article. 10. A method for manufacturing a wiring substrate by laser processing, comprising the steps of: forming a multilayer film comprising two or more layers having different materials irradiated with laser light The wavelength of the laser light is selected based on the reflectance of the multilayer film; and the wiring substrate is fabricated. 11. A method of manufacturing a display device comprising a wiring substrate, comprising the steps of: opening/forming a multilayer film comprising two or more layers having different materials by a moving light wheel. Selecting a reflectance based on the multilayer film; and fabricating the wiring substrate to be included in the display device. 12. A wiring substrate manufactured by irradiating with laser light comprising a multilayer film comprising two or more layers having different materials from each other, the wavelength of the laser light being selected based on the reflectance of the multilayer film. 122617.doc