TW200811300A - A treatment method of metalization of metal or ceramic substrate - Google Patents

Abstract

A treatment method of metalization of metal or ceramic substrate is disclosed. The step are as follows: metal or ceramic substrate surface is plated with a heat conductive insulation layer by a batchwise continuous surface treatment physical vapor deposition (PVD) technique. The heat conductive insulation layer is then plated with an electric conductive layer through a batchwise continuous surface treatment PVD technique. The electric conductive layer includes using chromium (Cr), aluminum (Al), titanium (Ti), copper (Cu) to carry out metalization treatment. Electroplating is applied on the surface of the electric conductive layer to integrate the electroplating layer onto the electric conductive layer resulting in increasing the thickness of the electric conductive layer. This technique uses batchwise continuous surface treatment PVD technique to consecutively form a homogeneous heat conductive insulation layer and a homogeneously electric conductive layer on the metal or ceramic substrate. The electric conductive layer is then electroplated onto the electric conductive layer till to the required thickness.

Description

200811300 IX. Description of the invention: [Technical field of invention] A invention relates to a metallization treatment method for a metal or ceramic substrate, in particular, the method is characterized in that the substrate is subjected to metallization coating treatment, the quality is stable, and the high-power LED can be improved. Module cooling requirements and efficiency. [Prior Art] According to the current manufacturing technology of existing substrates, mainly on a metal substrate (usually • aluminum plate), a layer of insulating adhesive with thermal conductivity is applied, and a layer of about 15 is attached to the insulating adhesive. Article genus, _ high temperature and high pressure environment, the metal is laminated to the substrate. Since copper metal must rely on insulating glue and metal substrate, the copper foil metal layer cannot be finished due to stress concentration at the edge of the metal substrate! The mouth' even contains bubbles, which may cause the bonding to deteriorate, resulting in a bell-curve phenomenon. If the insulating coating is unevenly applied, it may cause difficulty in controlling the flatness of the copper foil after lamination. • a current stage – a kind of high-power LED is the future development direction. The current metal substrate is the number of heat-conductive insulating rubber used and then operated by high-power LED module, pay (w) high temperature state' The guide ship can not ride the high temperature generated, so the gel will soften when it encounters high temperature. At this time, the metal-debonding phenomenon of the combined metal will be greatly affected. SUMMARY OF THE INVENTION The subject of the present invention is to solve the related problems caused by the poor thermal conductivity of the high-power (10) substrate, and to improve the efficiency of the high-power LED and the life of the use of 5 200811300, thereby making the substrate quality and production efficiency. The cost and quality stability are higher than the conventional press-fit technology. r The main purpose of the present invention is to provide a metal or ceramic substrate with a coating layer, a physical Vapor Deposition batch-level continuous surface treatment technology, sequentially forming a metal or ceramic substrate. A uniform thermal conductive layer and a uniform conductive layer are subsequently plated on the conductive layer by electroplating to increase the thickness of the conductive layer. _ The second objective of the present invention is to provide a consistent process operation for the metallization treatment of the genus or ceramic substrate, and the substrate can be formed by the PVD processing technology. The composition is uniformly and surely adhered to the substrate in an atomic state. After that, the conductive layer is plated on the thermally conductive insulating layer by PVD, and the final continuous process is to thicken the thickness of the conductive layer by electroplating. Both the thermal conductive insulating layer and the conductive layer are treated by the MPVD plating technology, so that a stable bonding effect can be achieved between the substrate, the thermal conductive insulating layer and the conductive layer. [Embodiment] * The present invention is directed to the above-described objects, the technical means and the technical means thereof, and the preferred embodiments are described as follows: - Please refer to the figures _ to 3 The invention is a metal or ceramic wire 2, the method is mainly based on the thermal conductive insulating layer 2 and the outer cladding layer 3, and the processing steps are as follows: Step ―, the substrate 1 is metal or ceramic enamel The substrate 1 may be made of materials such as Ming (8), copper 6 200811300 (Cu), alumina (Al 2 〇 3), and zirconia (Zr 〇 2); Step 2: plating a surface of the substrate 1 with a thermal conductive layer 2, the thermal conductive insulation layer 2 r main components are alumina (AI2O2), aluminum nitride (A1N), oxidized chopping (Si〇D, yttrium oxide • (10) (6) and tungsten oxide (W〇2), chromium nitride ((^ ), titanium nitride (1^), nickel nitride vanadium (NiVN) and other components, each of which can be implemented as a thermally conductive insulating layer 2, each of which can be plated by PVD batch-level continuous surface treatment technology Covering the surface of the substrate 1 to achieve high thermal conductivity and insulation effect; • Step 3, plating on the thermal conductive insulation layer 2 with PVD batch-level continuous surface treatment technology Layer 3, the conductive layer 3 comprises chromium (Cr), aluminum (41), titanium (1), nickel (1), copper (Cu), each of which can be implemented as a conductive layer 3, Step 4: The conductive layer 3 having a conductive function is treated by a plating technique, and the plating layer 4 is a copper (Cu) plating layer or another metal plating layer, and the plating layer 4 is bonded to the V electrical layer 3 Above, according to the design requirements, increase to the required thickness to achieve the best conduction power. • In addition, in step 3, the thermal insulation layer 2 contains components containing thermally conductive insulating oxides and nitrides that can be PVD-plated. , carbides, etc. can be composited in the thermal insulation layer 2. _ Containing this derivative, nitrogen recording, carbide thermal insulation - coating 2 'can be good and stable with shouting or metal material BRIEF DESCRIPTION OF THE DRAWINGS The first figure shows a schematic cross-sectional view of a metal substrate structure of the present invention. The second figure shows a schematic diagram of the layered structure of the present invention. 7 200811300 The third figure shows a flow chart of the manufacturing steps of the present invention. [Main component symbol description] 1. ···.·· ···················································· Electric forging layer

Claims (1)

200811300 X. Patent application scope: 1. Metallization treatment method for metal or ceramic materials, the processing steps include: Γ Step one, metal or ceramic substrate; • Step two, the surface of the substrate is used as a secondary continuous surface Processing, forming a thermally conductive insulating layer; 'Step 3, plating the metal conductive layer on the thermally conductive insulating layer by batch-level continuous wire processing technology; 10 Step 4, plating the metal electric ore layer on the surface of the conductive layer by electroplating, The electron mirror layer is bonded to the conductive layer to thicken the conductive layer to a desired thickness. 2. The substrate metallization coating treatment method according to the application of the material, wherein the substrate may be aluminum (Α1), copper (Cu), alumina (a12〇s), zirconia (Zr〇2) and the like. . 3. The method for processing a substrate metallization coating according to the scope of the patent application, wherein the heat and % layer 2 can be oxidized (Αΐ2〇3), nitrided (Ain), oxidized dream• (Si) 〇2), yttrium oxide (cut 2), oxidized crane (10)), zirconia (Zr02), nitriding (nothing), chromium nitride (CrN), titanium oxide (Ti〇2), titanium nitride (complete) , nickel nitride hunger (10) collar, and other thermally conductive insulating nitrides, oxides, and carbide components that can be formed by PVD. They can be mixed individually or in combination of two or more to form a thermally conductive insulating layer. 4. The substrate metallization coating treatment method according to claim 1, wherein the conductive layer 3 can be complex (Cr), Ming (A1), titanium (Ti), copper (Cu), and wrong (Zr). And other conductive metal components which can be formed by PVD, may be mixed individually or in two or more to form a conductive layer. 9 200811300 5. The metal substrate metallization coating method according to claim 1, wherein the thickness of the conductive layer and the plating layer can be flexibly changed according to the design. 6. The metal substrate metallization coating method according to claim 1, wherein the plating layer is a copper (Cu) plating layer or another metal plating layer.