200810148 九、發明說明·· 【發明所屬之技術領域】 本發明是有關於一種發光二極體（light emitting di〇de; LED) ’且特別是有關於一種側射型發光二極體之封裝結構。 【先前技術】 兔光一極體係為一種接合二極體，主要由在半導體基 板上的p型磊晶層與n型磊晶層所構成。在形成磊晶結構 之後，晶片經過切割，接著固定在面板上，然後經過打線， 最後再進行封裝，形成發光二極體發光燈泡。一般而言， 發光二極體使用的封裝材料為環氧樹脂（Ep〇xy)。 發光二極體種類繁多、用途廣泛，早已成為現代生活 中不可或缺的重要工具之一。一般發光二極體主要係用於 照明或警示，例如應用在家電、音響及儀表之指示燈；傳 真機、條碼閱讀機及光學滑鼠之光源；以及應用在手機、 個人數位助理（perSOnai digital assistant; PDA)、液晶顯示器 中之背光模組及其他電子產品内。 隨著手機、PDA、背光模組等電子產品的發展，發光 二極體之發光功率的要求也越來越高。因此，如何使LEd 所發出的光線可以充分被利用，為目前重要考量項目之 一。傳統上，提高LED亮度的方法不外乎是改變lED的封 裝結構或是改變LED晶片結構。然而，當改變LED的封裝 …構枯，例如使用折射率較大的封裝材料來覆蓋晶片等， 則其所能提高的整體亮度有限。因為光線在傳遞的過程 中，光線會被LED晶片之部分結構或本身所使用之部分材 200810148 =，例如LED晶片中之半導體磊晶結構或電極等，吸收而 降低了光線的使用率。所以，即使使用折射率較大的封裝 材料也無法大幅提咼整體的亮度。但是，若改變led晶 片、、、Q構B守，例如粗化LED晶片的表面、使用不同的蠢晶材 • 料、或是在LED晶片的底部形成反射結構等，又會在後續 ， 封裝LED晶片時，因為LED晶片的發光位置、或1^〇晶 片所發出之光線形狀（light pattern)等因素，而影響封裝完 _ 的LED整體亮度。如此一來，則無法再進一步提高發光二 、極體封裝結構的整體亮度。因此，欲製造出一種高亮度的 發光二極體封裝結構，確實是一種極為困難的技術挑戰。 因此，有必要提供一種改良式的發光二極體封裝結 構，以解決上述之問題。 【發明内容】、 士根據本發明一實施例，提出一種側射型發光二極體之 φ 封裝結構。此側射型發光二極體之封裝結構包含基座、二 电極、發光二極體晶片、封裝材料以及導線架。其中，基 座具有一凹陷部。二電極係設置於凹陷部底部。發光二極 體晶片係設置於凹陷部底部上並與二電極電性連接。其 發光二極體晶片之基板的厚度係大於14〇微米。在本 發明之一實施例中，基板的厚度為14〇微米至4〇〇微米。 上述之封裝材料係填入凹陷部Θ，以封裝#光二極體晶 片。導線架係設置於基座之兩側，且與二電極電性連接。 在本發明之一實施例中，更可以依需求於基座之凹陷 部之内側壁上設置一反射層，以進一步提高亮度。 200810148 因此，由上述本發明之實施例可知，本發明之側射型 發光二極體封裝結構具有較高之發光效率，其亮度約可增 加30%。再者，由於本發明係利用一厚度較厚之基板來增 加LED晶片側邊的出光量，所以不僅可以具有較高的發光 效率，而且更可以得到體積較小的發光二極體封裝結構。 【實施方式】 本發明提供一種改良式的側射型發光二極體之封裝結 構，以提高亮度。請參照第1圖，其係繪示一種發光二極 體封裝結構之剖面結構示意圖。請同時參照第2圖，其係 繪示沿著第1圖線段M，之剖面示意圖。在第i圖中，發光 一極體封裝結構100包含基座1〇2、二電極1〇4a與1〇4b、 導線架106、發光二極體晶片1〇8、二導線11(^與丨丨讥以 及封裝材料112。其中，基座1〇2具有一凹陷部U4。上述 之基座102之材質例如可為環氧樹脂、玻璃纖維、氧化鈦、 氧化#5、液晶尚分子或陶兗。 上述之二電極104係設置於凹陷部114之底部。在本 發明之一貫施例中，二電極1〇4係區分為第一電極區知 與第二電極區104b，且第一電極1〇4a與第二電極⑺朴之 間彼此互相絕緣。導線架106係設置於基座1〇2之兩側， 且與二電極1〇4電性連接。其中，二電極1〇4之材質例如 可為金、銀、銅、始、紹、錫或鎂。 發光二極體晶片1〇8係設置於凹陷部114之底部，並 透過導線llGa、ll〇b分別電性連接第—電極1()4a與第二 電極104b。在本發明之一實施例中，發光二極體晶片、 7 200810148 係《又置於第一電極1 〇4a之上。在本發明之一實施例中，更 可以於基座1〇2之凹陷部114之内側壁上設置一反射層（未 繪示），以進一步提高亮度。 、 上述之封裝材料112係填入於基座1〇2之凹陷部U4 内，以封裝發光二極體晶片1〇8。其中，上述之封裝材料 112之材貝例如可為環氧樹脂（Epoxy)、壓克力或矽膠。 接著明參照弟3圖，其係繪示第1圖中發光二極體 晶片之剖面放大示意圖。在第3圖中，發光二極體晶片1〇8 之基板108a的厚度係大於14〇微米以上。在本發明之一實 施例中’基板108a的厚度為140微米至400微米。在另一 實施例中，更佳為190微米至24〇微米。上述之基板1〇8a 之材質例如可為藍寶石（sapphire)或碳化矽。 一明繼績參照第3圖，由於基板i〇8a之厚度大於14〇微 米，亦即發光二極體晶片108之側邊出光窗口之高度亦大 於140微米。所以當發光二極體晶片1〇8之活化層⑽μ layer) l〇8b產生光線109時，通過基板1〇8a側邊之出光窗 口的出光量會增加。因此，在完成LED封裝結構之後，由 於發光二極體晶片108本身的出光量大幅提昇，所以可以 侍到具有較高發光效率之發光二極體封裝結構。 再者，由於本發明之發光二極體晶片1〇8之出光量大 幅提昇，所以更可以依需求將上述之發光二極體晶請 衣在具有見度較小之凹陷部的基座上，以縮小封裝結構 ^體積。如此一來’不僅不會影響整體的發光效率，同時 ，能得到較輕薄的發光二極體封裝結構。在本發明之另一 實施例中，如第2圖所示，凹陷部114之上部寬度_可 200810148 以為1·2釐米以下，更佳為〇·3釐米至〇.8釐米。200810148 IX. EMBODIMENT DESCRIPTION OF THE INVENTION The present invention relates to a light emitting diode (LED) and, in particular, to a package structure of a side-emitting type light emitting diode. . [Prior Art] The rabbit light monopole system is a junction diode mainly composed of a p-type epitaxial layer and an n-type epitaxial layer on a semiconductor substrate. After the epitaxial structure is formed, the wafer is cut, then fixed on the panel, and then subjected to wire bonding, and finally packaged to form a light-emitting diode light-emitting bulb. In general, the encapsulating material used for the light-emitting diode is epoxy resin (Ep〇xy). Light-emitting diodes have a wide variety and wide range of uses, and have long been an indispensable tool in modern life. The general light-emitting diodes are mainly used for lighting or warning, such as indicator lights for home appliances, audio and instrumentation; fax machines, bar code readers and optical mouse light sources; and applications for mobile phones, personal digital assistants (perSOnai digital assistant) ; PDA), backlight modules in LCDs and other electronic products. With the development of electronic products such as mobile phones, PDAs, and backlight modules, the requirements for the luminous power of the light-emitting diodes are also increasing. Therefore, how to make the light emitted by LEd can be fully utilized is one of the important considerations. Traditionally, the way to increase the brightness of LEDs has been to change the package structure of the lED or to change the structure of the LED chip. However, when the package of the LED is changed, for example, a package material having a large refractive index is used to cover the wafer or the like, the overall brightness which can be improved is limited. Because the light is in the process of transmission, the light will be absorbed by some parts of the LED chip or part of the material used by itself, such as the semiconductor epitaxial structure or electrode in the LED chip, which reduces the light usage. Therefore, even if a packaging material having a large refractive index is used, the overall brightness cannot be greatly improved. However, if the LED wafer is changed, and the Q structure is changed, for example, the surface of the LED chip is roughened, a different stupid crystal material is used, or a reflective structure is formed at the bottom of the LED chip, and subsequently, the LED is packaged. In the case of a wafer, the overall brightness of the packaged LED is affected by factors such as the light-emitting position of the LED chip or the light pattern emitted by the wafer. As a result, the overall brightness of the light-emitting diode package structure cannot be further improved. Therefore, it is indeed an extremely difficult technical challenge to manufacture a high-brightness LED package structure. Therefore, it is necessary to provide an improved light emitting diode package structure to solve the above problems. SUMMARY OF THE INVENTION According to an embodiment of the present invention, a φ package structure of a side-emitting type LED is proposed. The package structure of the side-emitting type LED includes a susceptor, a two-electrode, a light-emitting diode wafer, a packaging material, and a lead frame. Wherein the base has a recess. The two electrode system is disposed at the bottom of the recess. The light emitting diode chip is disposed on the bottom of the recess and electrically connected to the two electrodes. The thickness of the substrate of the light emitting diode chip is greater than 14 Å. In one embodiment of the invention, the substrate has a thickness of from 14 micron to 4 microns. The above encapsulating material is filled in the recess Θ to encapsulate the #光二极管片片. The lead frame is disposed on both sides of the base and electrically connected to the two electrodes. In an embodiment of the invention, a reflective layer may be disposed on the inner sidewall of the recess of the susceptor to further increase the brightness. 200810148 Therefore, it can be seen from the above embodiments of the present invention that the side-emitting type LED package structure of the present invention has high luminous efficiency and its brightness can be increased by about 30%. Furthermore, since the present invention utilizes a thicker substrate to increase the amount of light emitted from the side of the LED wafer, it is possible to have not only a higher luminous efficiency but also a smaller-sized LED package structure. [Embodiment] The present invention provides an improved package structure of a side-emitting type light-emitting diode to improve brightness. Please refer to FIG. 1 , which is a cross-sectional structural diagram of a light emitting diode package structure. Please refer to Fig. 2 at the same time, which is a schematic cross-sectional view along the first line segment M. In the figure i, the light-emitting diode package structure 100 includes a pedestal 1 〇 2, two electrodes 1 〇 4a and 1 〇 4b, a lead frame 106, a light-emitting diode wafer 1 〇 8, and two wires 11 (^ and 丨And the encapsulation material 112. The pedestal 1 〇 2 has a recess U4. The material of the susceptor 102 can be epoxy resin, glass fiber, titanium oxide, oxidized #5, liquid crystal or ceramic. The two electrodes 104 are disposed at the bottom of the recessed portion 114. In the consistent embodiment of the present invention, the two electrodes 1〇4 are divided into a first electrode region and a second electrode region 104b, and the first electrode 1〇 4a and the second electrode (7) are insulated from each other. The lead frame 106 is disposed on both sides of the base 1〇2 and electrically connected to the two electrodes 1〇4, wherein the material of the two electrodes 1〇4 can be The light-emitting diode wafers 1〇8 are disposed at the bottom of the recessed portion 114, and are electrically connected to the first electrode 1(1) through the wires 11Ga and 11〇b, respectively. 4a and the second electrode 104b. In one embodiment of the invention, the LED chip, 7 200810148 is "on the first In the embodiment of the present invention, a reflective layer (not shown) may be disposed on the inner sidewall of the recess portion 114 of the pedestal 1 〇 2 to further improve the brightness. The material 112 is filled in the recess U4 of the susceptor 1 〇 2 to encapsulate the illuminating diode wafer 1 〇 8. The material of the encapsulating material 112 can be, for example, epoxy resin (Epoxy), etc. Referring to Figure 3, there is shown a cross-sectional enlarged view of the light-emitting diode wafer of Figure 1. In Figure 3, the thickness of the substrate 108a of the light-emitting diode wafer 1〇8 is greater than 14 微米微米以上。 In one embodiment of the invention, the thickness of the substrate 108a is from 140 micrometers to 400 micrometers. In another embodiment, more preferably from 190 micrometers to 24 micrometers. The material of the substrate 1〇8a described above is used. For example, it may be sapphire or strontium carbide. As shown in Fig. 3, since the thickness of the substrate i 〇 8a is larger than 14 〇 micrometers, that is, the height of the side light-emitting window of the light-emitting diode wafer 108 is also greater than 140. Micron. So when the active layer of the light-emitting diode wafer 1〇8 (10) When the layer) l〇8b generate light 109 will increase the quantity of light by the window side of the substrate 1〇8a. Therefore, after the completion of the LED package structure, since the amount of light emitted from the light-emitting diode wafer 108 itself is greatly increased, it is possible to provide a light-emitting diode package structure having higher luminous efficiency. In addition, since the amount of light emitted by the light-emitting diode chip 1〇8 of the present invention is greatly improved, the above-mentioned light-emitting diode can be coated on the pedestal having a small concave portion as needed. To reduce the package structure ^ volume. In this way, not only does it not affect the overall luminous efficiency, but also a lighter and thiner LED package structure can be obtained. In another embodiment of the present invention, as shown in Fig. 2, the width _ of the upper portion of the recessed portion 114 may be 12,000 cm or less, more preferably 〇3 cm to 〇8 cm.
Ik後，進行發光二極體封裝結構1〇〇之亮度測試。由 表一之結果得知，當發光二極體晶片108中之基板10仏之 厚度為140微米增加至4〇〇微米時，發光二極體封裝結構 之亮度約可提高1〇%至30〇/〇。 表一不同厚度的LED晶片及其封裝結構的亮度之關係 發光二極體晶片之基板 LED封裝結構之亮度增加的百 厚度(微米） 分比 140 10 _ 190 22 240 ~-------- ---^_ 290 —---—--- 28 --------- _ 340 30 因此，由上述之分析可知，本發明之發光二極體封裝 結構具有較高之發光效率，其亮度約可增加1〇%至3〇%。 再者，由於本發明係利用厚度較厚之基板來提高發光二極 體晶片之側邊的出光量，所以不僅可以得到較高的發光效 率’而且更可以得到體積較小的發光二極體封裝結構。 雖然本發明已以實施例揭露如上，然其並非用以限定 本發明，任何熟習此技藝者，在不脫離本發明之精神和範 9 200810148 圍内，當可作各種之更動與潤飾，因此本發明之保護範圍 當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 為讓本發明之上述和其他目的、特徵、優點與實施例 能更明顯易懂，所附圖式之詳細說明如下： 第1圖，其係繪示一種發光二極體封裝結構之剖面結 構示意圖。 第2圖，其係繪示沿著第1圖中線段ι_ι，之剖面示意圖。 第3圖，其係繪示第1圖中發光二極體晶片之剖面放 大示意圖。 【主要元件符號說明】 100 :發光二極體封裝結構 1〇2 :基座 104 :二電極 104b :第二電極 108 :發光二極體晶片 108b :活化層 ll〇a、ll〇b :導線 114 :凹陷部 104a :第一電極 106 :導線架 10 8 a ·基板 109 :光線 112 :封裝材料 114a :上部寬度After Ik, the brightness test of the light emitting diode package structure was performed. As can be seen from the results of Table 1, when the thickness of the substrate 10 in the LED wafer 108 is increased from 140 μm to 4 μm, the brightness of the LED package structure can be increased by about 1% to 30〇. /〇. Table 1 The relationship between the brightness of LED chips of different thicknesses and their package structure The brightness of the substrate LED package structure of the LED substrate is increased by the thickness (micrometer). Ratio of 140 10 _ 190 22 240 ~------- - ---^_ 290 —------ 28 --------- _ 340 30 Therefore, from the above analysis, the light-emitting diode package structure of the present invention has a high light emission. Efficiency, its brightness can be increased by about 1% to 3%. Furthermore, since the present invention utilizes a thicker substrate to increase the amount of light emitted from the side of the light-emitting diode chip, not only can a higher luminous efficiency be obtained, but also a smaller-sized light-emitting diode package can be obtained. structure. Although the present invention has been disclosed in the above embodiments, it is not intended to limit the present invention, and the present invention can be variously modified and retouched without departing from the spirit of the present invention and the scope of the present invention. The scope of protection is subject to the definition of the scope of the patent application. BRIEF DESCRIPTION OF THE DRAWINGS The above and other objects, features, advantages and embodiments of the present invention will become more <RTIgt; Schematic diagram of the cross-sectional structure of the package structure. Fig. 2 is a schematic cross-sectional view taken along line ι_ι of Fig. 1. Fig. 3 is a schematic cross-sectional view showing the light-emitting diode wafer of Fig. 1. [Description of main component symbols] 100: Light-emitting diode package structure 1〇2: pedestal 104: two electrodes 104b: second electrode 108: light-emitting diode wafer 108b: active layer lla, ll〇b: wire 114 : recessed portion 104a: first electrode 106: lead frame 10 8 a · substrate 109: light 112: packaging material 114a: upper width