200810069 九、發明說明： 【發明所屬之技術領域】 本發明-般係關於半導體裝置之封裝，且 關於雙邊冷卻整合電源裝置模組及其製造方法。° '、 【先前技術】 具有共同高電流輸入或輸出終端之兩個電源裝置的配置 可在諸如同步降謹器之電路内找到。同步降壓轉換哭200810069 IX. Description of the Invention: TECHNICAL FIELD OF THE INVENTION The present invention generally relates to packaging of semiconductor devices, and to a bilateral cooling integrated power supply device module and a method of fabricating the same. ° ', [Prior Art] The configuration of two power supply units with common high current input or output terminals can be found in circuits such as synchronous reducers. Synchronous buck conversion cry
通常用作行動電話、可攜式電腦、數位相機、刻紋機及其 他可攜式電子裝置之電源供應器。同步降壓轉換器偏移直 j電壓位準，以便為可程式化格栅陣列積體電路、微處理 器、數位信號處理積體電路及其他電路提供電力，同時穩 疋^•池輸出、濾除雜訊並減小紋波（ripple)。該等裝置亦用 於在廣泛的資料通信、電信、負載點及計算應用中提供高 電流多相電力。 圖1顯示典型同步降壓轉換器10之方塊圖。轉換器具有 藉由脈衝寬度調變（pulse width m〇dulati〇n ; pWM) lc 16 驅動之高邊FET 12及低邊FET 14。可將Quq2裝置12、 14組怨為離散裝置，其需要最佳佈局以減小因印刷電路板 (printed circuit board; PCB)上高邊 FET 12 之源極與低邊 FET 14之汲極的連接引起之寄生電阻18及電感2〇。 2005年12月29曰公開的美國專利申請公開案第 2005/0285238 A1號，發明人為J〇shi等人，揭示一種整合 電晶體模組，其包括界定低邊平台及高邊平台之引線框 架。將低邊電晶體黏著於低邊平台上，使該低邊電晶體之 121071. doc 200810069 汲極電連接至低邊平台。將高邊電晶體黏著於高邊平a 上’使該高邊電晶體之源極電連接至高邊平台。引線框: 之階梯狀部分電連接低邊及高邊平台，從而亦連接低邊電 晶體之汲極與高邊電晶體之源極。 儘管後來公開之專利申請案的整合電晶體模組對期望的 應用报有s ’但模組腳位（Wprint)在業界並不常用。 因此，需要-種改良之整合電源裝置模組，其可用於對 此寻問題提供解決方案之電路内，例如同步降壓轉換器電 路0 【發明内容】 依據本發明，為此等問題提供—解決方案。 其包 依據本發明之一特徵’提供一整合電源裝置模組 含： :引線框架，其具有第一及第二間隔墊及位於該等第一 與第二墊之間之一或多個共同源極汲極引線；It is commonly used as a power supply for mobile phones, portable computers, digital cameras, engraving machines, and other portable electronic devices. Synchronous buck converter offsets the straight j voltage level to provide power for programmable grid array integrated circuits, microprocessors, digital signal processing integrated circuits, and other circuits while maintaining stability and output Remove noise and reduce ripple. These devices are also used to provide high current multiphase power in a wide range of data communications, telecommunications, point of load and computing applications. FIG. 1 shows a block diagram of a typical synchronous buck converter 10. The converter has a high side FET 12 and a low side FET 14 driven by pulse width modulation (pulse width m〇dulati〇n; pWM) lc 16 . The Quq2 devices 12, 14 can be reputed as discrete devices that require an optimal layout to reduce the connection between the source of the high side FET 12 on the printed circuit board (PCB) and the drain of the low side FET 14 The parasitic resistance 18 and the inductance 2〇 are caused. U.S. Patent Application Publication No. 2005/0285238 A1, issued toK. The low-side transistor is adhered to the low-side platform, and the low-side transistor is electrically connected to the low-side platform. The high side transistor is adhered to the high side plane a' to electrically connect the source of the high side transistor to the high side platform. Lead frame: The stepped portion electrically connects the low-side and high-side platforms to connect the drain of the low-side transistor to the source of the high-side transistor. Although the integrated transistor module of the later published patent application has s ' for the desired application, the module footprint (Wprint) is not commonly used in the industry. Therefore, there is a need for an improved integrated power supply unit module that can be used in a circuit that provides a solution to this problem, such as a synchronous buck converter circuit 0. [Invention] In accordance with the present invention, a solution is provided for this problem. Program. The package according to one aspect of the present invention provides an integrated power supply device module comprising: a lead frame having first and second spacers and one or more common sources between the first and second pads Extremely extremely thin lead
—第-及第二電晶冑’其係分別採用覆晶方式附著於該等 第-及第二墊，其中將該第二電晶體之源極電連接至該一 或夕個共同源極〉及極引線；以及 一第—失具’其係、附著於該第晶體之沒極，並電連 接至該一或多個共同源極汲極引線。 依據本發明之另-特徵’提供—整合電源裝置模組，立 包含： :引線框架，其具有第—及第二間隔墊、位於該等第一 與第二墊之間之一或多個共同源極汲極引線以及位於該第 121071.doc 200810069 二墊外部的一或多個汲極引線； 第一及第二電晶體，其係分別罗曰 ^ 用復日日方式附著於該等 弟一及第二墊，其中將該第二 电日日體之源極電連接至該一 或多個共同源極汲極引線； 一第一夾具，其係附著於該第一 ^ 罨日日體之汲極，並電連 接至该一或多個共同源極汲極引線；- the first and second electro-ceremons are attached to the first and second pads by flip-chip bonding, wherein the source of the second transistor is electrically connected to the one or the common source > And a pole lead; and a first-failure', attached to the pole of the crystal, and electrically connected to the one or more common source drain leads. According to another feature of the present invention, there is provided an integrated power supply device module comprising: a lead frame having a first and second spacers, one or more common between the first and second pads a source drain lead and one or more drain leads outside the second pad of the 121071.doc 200810069; the first and second transistors are respectively attached to the brothers in a day-to-day manner And a second pad, wherein the source of the second electric solar cell is electrically connected to the one or more common source drain wires; a first clamp attached to the first day a drain and electrically connected to the one or more common source drain leads;
-第二夾具’其係、附著於該第二電晶體之汲極，並電連 接至位於該第二墊外部的該一或多個沒極引線；以及 模製材料，其囊封該引線框架、該等電晶體及該等夾 具’以形成該模組。 依據本發明之另—特徵’提供—種製作整合電源裝置模 組之方法，其包含： 提供一引線框架，該引線框架具有第-及第二間隔塾、 :於該等墊之間之一或多個共同源極汲極引線以及位於該 第二墊外部的一或多個汲極引線； 刀別採用覆晶方式將第一及第二電晶體附著於該等第一 及第一墊’其中將該第二電晶體之源極電連接至該一或多 個共同源極汲極引線； 將一第一夾具附著於該第一電晶體之汲極，並將該第一 失〃、電連接至该一或多個共同源極沒極引線； 將一第二夾具附著於該第二電晶體之汲極，並將該第二 夾八電連接至位於該第二墊外部的該一或多個汲極引線； 以及 採用模製材料囊封該引線框架、該等電晶體及該等夾 121071.doc 200810069 具’以形成該模組。 【實施方式】 圖2 A係依據本發明之一項具體實施例用於形成雙邊冷卻 整合電源裝置模組之類型的兩個引線框架32及34之平面圖 30。引線框架32、34具有如圖2八至2(：内所示之連接桿 36，且其係在囊封作業後的單切分離（singUlated)程序中予 以移除，為了避免混亂，在其他圖式中未顯示。連接桿使 引線框架32、34可得以成套放置，並製造成一捲盤。如圖 2B所示，將焊錫膏38塗敷於引線框架32、34之引線，其可 :)：干接至兩個夾具40及42，並將兩個電源裝置44及46翻轉及 分別放置於引線框架32及34上。在晶片製造期間用焊料塗 布電源裝置44、46。圖2C中，將兩個夾具4〇、42分別放置 於引線框架32、34及電源裝置44、46上，並加熱模組以將 電源裝置44、46接合至引線框架32、34，以及將焊錫膏分 別回焊至引線框架32、34之適當引線上以及電源裝置44、 46之後側上。出於簡化說明目的，下文電源裝置料、將 稱為MOSFET 44、46，儘管本發明並不限於或僅限於 MOSFET。例如，橫跨FET 12及14之源極及汲極之二極體 也可能係電源裝置44及46之部分。 從圖2B可看出，分別將引線48及5〇連接至乂⑽邱丁料、 46之個別閘極，並且在單切分離程序後將此等引線與個別 引線框架32、34之剩餘部分電絕緣。未連接至引線心或“ 的引線框架32、34之部分係分別連接至M〇SFET 44、“之 源極。MOSFET 44、46之汲極係分別烊接至夾具4〇、42。 121071.doc -10- 200810069 夾具40、42具有平坦部件52及複數個向下延伸引線54， 其係在回焊程序期間採用焊錫膏3 8焊接至引線。因此 MOSFET 44之源極係藉由夾具40連接至MOSFET 46之汲 極0 圖3A、3B及3C係整合電源裝置模組66之個別俯視平面 圖60、斷面側視圖62及仰視平面圖64，該模組66係採用囊 封材料68(例如環氧化物）予以部分囊封的圖2C内所示之結 構。圖3B之斷面圖係沿圖3A之線3B-3B截取。圖3A中，將 平坦部件52曝露於模組70之頂部。如圖3C所示，模組70之 底部沿曝露之源極墊78及80(其係引線框架32、34之部分） 具有一行引線平台72、74及76。將引線82、84及86連接至 MOSFET 44之源極，如同源極墊78。引線88、90及92係 MOSFET 44之汲極與MOSFET 46之源極的共同連接，並藉 由夾具42將引線94、96、98及100連接至MOSFET 46之射 極0 藉由取代兩個離散FET 12及14，模組70適合用於圖1之 同步降壓轉換器10，即藉由MOSFET 44取代FET 12且藉由 MOSFET 46取代FET 14的模組70。藉由使用模組70，同時 夾具40提供低邊MOSFET 44之汲極與高邊MOSFET 46之源 極的電連接，兩個MOSFET 44、46實體上更接近在一起， 並且實質上減小了寄生電阻1 8及電感20。此外，藉由頂部 表面56未囊封的夾具40、42之固有散熱特性改善電源FET 之冷卻。藉由雙邊冷卻進一步改善冷卻，此係因為兩個裝 置之源極係經由與其附著的引線框架加以曝露。形成模組 121071.doc -11 - 200810069 70之方法亦產生改良之焊接合可靠性，因為需要單一焊料 回焊’而非多重焊料回焊。 圖4 A、4 B及4 C係依據本發明之另一具體實施例的雙邊 冷部整合電源裝置模組丨〇2之仰視平面圖及側視斷面圖。 圖4A之仰視平面圖顯示四行引線平台1〇6、1〇8、"ο及Η] 以及源極墊114及116。當製造模組1〇2時，如圖仙及化所 示將行108及110内之引線連接在一起，但設計成可藉由沿 圖4B及4C内所示之線118切斷模組1〇2，從而分離行1〇8内 之引線與行110内之引線，將模組1〇2分割成兩個分離單一 電源裝置模組。圖4B及4C之斷面圖分別係沿圖4A内之線 4B-4B及4C-4C截取。圖4C巾’引線平台120、122及124係 用於M0SFET 36、38之閘極平台。若沿線118分割模組 102 ’引線平台122將變得絕緣。 圖5係依據本發明之另一具體實施例的引線式雙邊冷卻 整合電源裝置模組14()之斷面側視圖。模組14〇具有外部引 線142，其與模組140之末端的平台墊144整合。如同先前 具體實施例，將平台墊144曝露於模組14〇之底部，但藉由 向上步進（stepping)至在模組14〇之底部平面上方退出模組 140之末端的第一水平區段146而從囊封材料延伸出去，然 後向下步進至第二水平區段148，以與模組14〇之底部平面 大致對齊。此引線式模組140因此可容納引線式封褒腳 位可藉由在線1 50及1 52處切除模組140之末端部分而移 除外部引線142，以形成無引線模組。 圖6A及6B係依據本發明之另一具體實施例形成雙邊冷 121071.doc 200810069 部整合電源裝置模組164的圖4C内所示之模組的修改之個 別斷面側視圖160及162，其中將兩個M〇SFET 36及38之汲 極連接在—起以形成共同汲極。圖0A中，在引線框架168 内元成一切鋸切口166，以將]^〇8?丑丁36及38絕緣。圖68 中將電及熱傳導散熱座1 70附著於夾具44、46之平坦部 件54 ’以形成共同汲極連接。 圖7A、7B及7C分別係依據本發明之另一具體實施例的 雙邊冷卻整合電源裝置模組18〇之俯視平面圖、部分斷面 俯視平面圖及仰視平面圖，該模組包括用於驅動兩個 MOSFET 44、46之控制1C 182，該等M〇SFET分別具有定 製之夾具184及186，以便將MOSFET 44之汲極連接至 MOSFET 46之源極，以及為以⑽奸丁 44、46提供冷卻。圖 7A係顯示曝露於模組18〇之頂部内的夾具“斗、186的個別 平坦部件188及190之俯視平面圖。如圖7C所示，模組18〇 具有二行引線平台192、194及196，其末端引線平台延伸 超過囊封材料198之末端。圖7B係模組180之部分斷面圖内 的俯視平面圖。控制IC 182具有複數個導線接合2〇〇，其 接合至行192内之某些引線平台以及接合至M〇SFE丁 46之 閘極及源極。為說明本發明之靈活性，夾具1 8 4、1 8 6之形 狀及模組180之腳位不同於前述模組之任何一者。 圖8A係金屬板2〇〇之俯視圖，其顯示需要使用熟知之作 業從用於本發明之具體實施例之一的金屬框架衝孔之四個 夾具202的輪廓。因此，可將夾具2〇2成套放置並製造成一 捲盤。圖8B係已從圖8A内所示之金屬板衝出並形成為圖 12】07】.doc -13 - 200810069 3B内所用的夾具之兩個夾具2〇2的側視圖。％圖所示， 夾具202具有形成於其中之溝渠2()4,以改善焊料附著。不 圖9 A係禝數個部分囊封模組2丨2之組塊鑄模2 1 〇的俯視平 面圖。在圖5所示之引線式模組14()的模製情形中，將模組 140形成為已單切分離的鑄模。圖9B係已從組塊鑄模2 切分離圖3A至3C内所示之囊封模組“後的模組之類型的 仰視圖。應明白，可在組塊鑄模21〇内形成無引線模組之 , 任何一者。 已經特別參考特定較佳具體實施例來詳細說明本發明， C應瞭解，可在本發明之精神及範疇内實施變更及修改。 【圖式簡單說明】 Μ結合附®之上料細說明，可更佳地瞭解前述及其他特 认特性、優點及本發明之整體，.其中： 圖1係一典型同步降壓轉換器電路之示意圖； 圖2A係依據本發明之一項具體實施例用於形成雙邊冷卻 , 整合電源裝置模組之類型的兩個引線框架之平面圖； 圖2B係圖2A内所示之引線框架依據本發明之一項具體 實施例將電晶體晶粒接合至該等引線框架的平面圖； 圖2 C係圖2 A之引線框架依據本發明之—項具體實施例 將兩個冷卻曰曰片附著於圖2A内所示之引線框架及圖内 所示之電晶體晶粒的平面圖； 圖3 A 3B及3C分別係已將圖2C内所示之結構部分地裝 入囊封材料内後的俯視平面圖、斷面側視圖及仰視平面 121071.doc 14- 200810069 圖4 A係依據本發明之另一具體實施例的雙邊冷卻整合電 源裝置模組之仰視平面圖； 圖4 B係圖4 A内所+ + 4·^ z 1所不之杈組的一項具體實施例之斷面側 視圖； 圖4 C係圖4 A内所+ > 斤不之杈組的另一具體實施例之斷面側 視圖； 圖5係依據本發明之# g ^ ^ 月之另一具體實施例的引線式雙邊冷卻 整合電源裝置模組之斷面側視圖； 圖6A及6B係依據本發明之另—具體實施例用於形成雙 邊冷卻整合電源裝置模組的圖4c内所示之模組的修改之斷 面側視圖； 圖7A、7B及7C分別係依據本發明之另—具體實施例具 有用於驅動兩個電源裝詈 ^ 衣置之控制1C的雙邊冷卻整合電源裝 置模組之俯視平面圖、邱八磁 T w 口 邛刀断面俯視平面圖及仰視平面 圖； 圖8 Α係金屬板之俯視圖，盆 八一不攸用於本發明之呈體實 施例之一的金屬框架衝孔之四個夾具的輪廊；/、、 請係已從圖8A内所示之金屬板衝出並形成為圖则 所用的夾具之兩個夾具的側視圖； 、崎複數個部分囊封模組之組塊鑄模的俯視平面圖； 以及 圖9B係圖9 A内所示之囊封模組的_ 離後之仰視B。 u在予以單切分 圖式中重複 應明白，出於清楚目的，且在認為適當處， 121071.doc -15 - 200810069 ’為更清楚地顯示本發 某些情形下伤 係不符實際 參考數字以指示對應特徵。同樣 明’圖式中各種物件的相對大小在 大小的。 【&要元件符號說明】 10 12 14 16 18 20 32 34 36 38 40 42 44 46 48 50 52 54 66 68a second clamp 'attached to the drain of the second transistor and electrically connected to the one or more electrodeless leads located outside the second pad; and a molding material encapsulating the lead frame The transistors and the fixtures 'to form the module. According to another feature of the present invention, a method of fabricating an integrated power supply device module includes: providing a lead frame having first and second spacers: between one of the pads or a plurality of common source drain leads and one or more drain leads on the outside of the second pad; the die attaches the first and second transistors to the first and first pads in a flip chip manner Electrically connecting the source of the second transistor to the one or more common source drain leads; attaching a first clamp to the drain of the first transistor, and connecting the first fault to the first To the one or more common source electrodeless leads; attaching a second clamp to the drain of the second transistor, and electrically connecting the second clip to the one or more located outside the second pad a drain lead; and the lead frame is encapsulated by a molding material, the transistors and the clips 121071.doc 200810069 have 'to form the module. [Embodiment] FIG. 2A is a plan view 30 of two lead frames 32 and 34 for forming a bilaterally cooled integrated power supply unit module in accordance with an embodiment of the present invention. The lead frames 32, 34 have the connecting rods 36 as shown in Figs. 2 to 2 (: and are removed in a single singulated procedure after the encapsulation operation, in order to avoid confusion, in other figures The tie bars 32, 34 can be placed in a set and fabricated into a reel. As shown in Figure 2B, solder paste 38 is applied to the leads of the lead frames 32, 34, which can: The two clamps 40 and 42 are dry connected and the two power supply units 44 and 46 are turned over and placed on the lead frames 32 and 34, respectively. The power supply units 44, 46 are coated with solder during wafer fabrication. In FIG. 2C, two clamps 4, 42 are placed on the lead frames 32, 34 and the power supply units 44, 46, respectively, and the module is heated to bond the power supply units 44, 46 to the lead frames 32, 34, and the solder is soldered. The paste is separately soldered to the appropriate leads of the lead frames 32, 34 and to the rear side of the power supply units 44, 46. For purposes of simplicity of explanation, the power supply device below will be referred to as MOSFETs 44, 46, although the invention is not limited or limited to MOSFETs. For example, the diodes across the source and drain of FETs 12 and 14 may also be part of power supply devices 44 and 46. As can be seen from Figure 2B, the leads 48 and 5 are respectively connected to the individual gates of the 乂10, and the remaining portions of the individual lead frames 32, 34 are electrically after the single-cut separation process. insulation. The portions of the lead frames 32, 34 that are not connected to the lead or " are respectively connected to the source of the M〇SFET 44,". The drains of the MOSFETs 44, 46 are respectively connected to the clamps 4, 42. 121071.doc -10- 200810069 The clamps 40, 42 have a flat member 52 and a plurality of downwardly extending leads 54 that are soldered to the leads using solder paste 38 during the reflow process. Therefore, the source of the MOSFET 44 is connected to the drain of the MOSFET 46 by the clamp 40. The individual top view plan 60, the cross-sectional side view 62 and the bottom plan view 64 of the integrated power supply module 66 of FIGS. 3A, 3B and 3C are used. Group 66 is a structure shown in Figure 2C that is partially encapsulated with an encapsulating material 68 (e.g., an epoxide). The cross-sectional view of Figure 3B is taken along line 3B-3B of Figure 3A. In Fig. 3A, the flat member 52 is exposed to the top of the module 70. As shown in Figure 3C, the bottom of the module 70 has a row of lead platforms 72, 74 and 76 along the exposed source pads 78 and 80 (which are part of the lead frames 32, 34). Leads 82, 84 and 86 are connected to the source of MOSFET 44, such as homolog pad 78. Leads 88, 90 and 92 are connected to the drain of the MOSFET 44 and the source of the MOSFET 46, and the leads 94, 96, 98 and 100 are connected to the emitter 0 of the MOSFET 46 by means of a clamp 42 by replacing the two discrete FETs 12 and 14, module 70 is suitable for use in synchronous buck converter 10 of FIG. 1, i.e., FET 12 is replaced by MOSFET 44 and module 70 of FET 14 is replaced by MOSFET 46. By using the module 70 while the clamp 40 provides the electrical connection of the drain of the low side MOSFET 44 to the source of the high side MOSFET 46, the two MOSFETs 44, 46 are physically closer together and substantially reduce parasitics Resistor 18 and inductor 20. In addition, the cooling of the power supply FET is improved by the inherent heat dissipation characteristics of the clamps 40, 42 that are not encapsulated by the top surface 56. The cooling is further improved by bilateral cooling because the sources of the two devices are exposed via the lead frame attached thereto. The method of forming the module 121071.doc -11 - 200810069 70 also results in improved soldering reliability because a single solder reflow is required instead of multiple solder reflow. 4, 4B and 4C are bottom plan and side cross-sectional views of a dual cold junction integrated power supply unit 丨〇2 in accordance with another embodiment of the present invention. The bottom plan view of FIG. 4A shows four rows of lead platforms 1〇6, 1〇8, "ο and Η], and source pads 114 and 116. When the module 1〇2 is fabricated, the leads in rows 108 and 110 are connected together as shown in Fig. 3, but are designed to be cut off by the line 118 shown in Figs. 4B and 4C. 〇2, thereby separating the leads in the row 1〇8 and the leads in the row 110, and dividing the module 1〇2 into two separate single power supply device modules. The cross-sectional views of Figs. 4B and 4C are taken along lines 4B-4B and 4C-4C in Fig. 4A, respectively. Figure 4C is a 'gate platform 120, 122 and 124 for the gate platform of the MOSFETs 36, 38. If the module 102' lead platform 122 is divided along line 118, it will become insulated. Figure 5 is a cross-sectional side view of a leaded bilateral cooling integrated power supply unit module 14 () in accordance with another embodiment of the present invention. The module 14 has an external lead 142 that is integrated with the platform pad 144 at the end of the module 140. As in the previous embodiment, the platform pad 144 is exposed to the bottom of the module 14 but is stepped up to the first horizontal section exiting the end of the module 140 above the bottom plane of the module 14〇. 146 extends from the encapsulating material and then steps down to the second horizontal section 148 to be generally aligned with the bottom plane of the module 14〇. The leaded module 140 can thus accommodate the leaded package pin. The outer lead 142 can be removed by cutting the end portion of the module 140 at the wires 150 and 152 to form a leadless module. 6A and 6B are modified cross-sectional side views 160 and 162 of the module shown in FIG. 4C for forming a bilateral cold 121071.doc 200810069 integrated power supply unit module 164 in accordance with another embodiment of the present invention, wherein The drains of the two M〇SFETs 36 and 38 are connected together to form a common drain. In Fig. 0A, all of the saw cuts 166 are formed in the lead frame 168 to insulate the ohms 36 and 38. In Fig. 68, the electrical and thermal conduction heat sinks 1 70 are attached to the flat members 54' of the clamps 44, 46 to form a common drain connection. 7A, 7B, and 7C are respectively a top plan view, a partial cross-sectional plan view, and a bottom plan view of a bilaterally cooled integrated power supply device module 18 according to another embodiment of the present invention, the module including two MOSFETs for driving 44, 46 controls 1C 182, which have custom fixtures 184 and 186, respectively, to connect the drain of MOSFET 44 to the source of MOSFET 46, and to provide cooling to (10) stalks 44, 46. Figure 7A is a top plan view showing the individual flat members 188 and 190 of the ram "186, 186 exposed in the top of the module 18". As shown in Figure 7C, the module 18 has two rows of lead platforms 192, 194 and 196. The end lead platform extends beyond the end of the encapsulating material 198. Figure 7B is a top plan view of a partial cross-sectional view of the module 180. The control IC 182 has a plurality of wire bonds 2 接合 that are bonded to one of the rows 192 The lead pads and the gates and sources that are bonded to the M〇SFE D. 46. To illustrate the flexibility of the present invention, the shape of the clamps 184, 186 and the legs of the module 180 are different from any of the aforementioned modules. Figure 8A is a top plan view of a metal plate 2〇〇 showing the contours of four clamps 202 that need to be punched from a metal frame used in one of the specific embodiments of the present invention using well-known operations. 2〇2 is placed in a set and manufactured into a reel. Fig. 8B has been punched out from the metal plate shown in Fig. 8A and formed into two clamps 2 of the jig used in Fig. 12] 07].doc -13 - 200810069 3B Side view of 〇2. As shown in the % diagram, the clamp 202 has a Medium ditch 2 () 4 to improve solder adhesion. Figure 9 A is a top plan view of a plurality of partial encapsulation modules 2 丨 2 of the block mold 2 1 。. The lead type module shown in Figure 5 In the molding case of 14(), the module 140 is formed as a mold which has been separated by a single cut. Fig. 9B has been separated from the block mold 2 by the block mold shown in Figs. 3A to 3C. The bottom view of the type. It should be understood that any one of the leadless modules can be formed in the block mold 21〇. The present invention has been described in detail with reference to the preferred embodiments thereof, and it should be understood that modifications and changes may be made within the spirit and scope of the invention. BRIEF DESCRIPTION OF THE DRAWINGS The foregoing and other features, advantages, and aspects of the present invention will be better understood from the following detailed description of the invention. FIG. 1 is a typical synchronous buck converter circuit. 2A is a plan view of two lead frames of the type used to form a bilateral cooling, integrated power supply unit module in accordance with an embodiment of the present invention; FIG. 2B is a lead frame shown in FIG. 2A in accordance with the present invention; A specific embodiment joins the die of the transistor to the plan view of the leadframe; FIG. 2C is a lead frame of FIG. 2A. Attaching two cooled fins to FIG. 2A in accordance with an embodiment of the present invention The lead frame shown and the plan view of the transistor crystal grains shown in the drawing; Fig. 3 A 3B and 3C are respectively a plan view and a section after the structure shown in Fig. 2C is partially filled in the encapsulating material. Side view and bottom view plane 121071.doc 14- 200810069 Figure 4A is a bottom plan view of a bilaterally cooled integrated power supply unit module according to another embodiment of the present invention; Figure 4B is a diagram of Figure 4A + + 4·^ One of the z 1 Figure 4 is a cross-sectional side view of another embodiment of the group + >不不不杈; Figure 5 is a #g ^ ^ month according to the present invention FIG. 6A and FIG. 6B are diagrams of FIG. A modified cross-sectional side view of the illustrated module; Figures 7A, 7B, and 7C, respectively, in accordance with another embodiment of the present invention having a bilaterally cooled integrated power supply for driving control 1C of two power supply devices Top plan view of the device module, top plan view and bottom plan view of the Qiu Ba magnetic T w boring tool; Fig. 8 Top view of the lanthanum metal plate, the metal frame used in one of the embodiments of the present invention a wheeled gallery of four clamps for punching; /, a side view of two clamps that have been punched out from the metal plate shown in Fig. 8A and formed into a jig for the plan; a top plan view of the block mold of the module; Figure 9B is a bottom view B of the encapsulation module shown in Figure 9A. u Repeatedly in the single-cutting pattern should be understood, for the sake of clarity, and where deemed appropriate, 121071.doc -15 - 200810069 'to more clearly show that the injury does not match the actual reference number in some cases of this issue Indicates the corresponding feature. Similarly, the relative sizes of the various objects in the 'pattern are large. [&Requires Symbol Description] 10 12 14 16 18 20 32 34 36 38 40 42 44 46 48 50 52 54 66 68
同步降壓轉換器 鬲邊FET 低邊FET 脈衝寬度調變1C 寄生電阻 電感 引線框架 引線框架 連接桿 焊錫膏 夾具 夾具 電源裝置 電源裝置 引線 引線 平坦部件 向下延伸引線 整合電源裝置模組/囊封模魬 囊封材料 121071.doc -16- 200810069 72 引線平台 74 引線平台 76 引線平台 78 源極墊 80 源極墊 82 引線 84 引線 86 引線 88 引線 90 引線 92 引線 94 引線 96 引線 98 引線 100 引線 102 雙邊冷卻整合電源裝置模組 106 引線平台 108 引線平台 110 引線平台 112 引線平台 114 源極墊 116 源極墊 120 引線平台 122 引線平台 121071.doc 200810069 124 引線平台 140 引線式雙邊冷卻整合電源裝置模組 142 外部引線 144 平台墊 146 第一水平區段 148 第二水平區段 164 雙邊冷卻整合電源裝置模組 166 切鋸切口 168 引線框架 170 電及熱傳導散熱座 180 雙邊冷卻整合電源裝置模組 182 控制1C 184 夾具 186 夾具 188 平坦部件 190 平坦部件 192 引線平台 194 引線平台 196 引線平台 198 囊封材料 200 導線接合 202 夾具 204 溝渠 210 組塊鑄模 212 部分囊封模組 121071.doc -18-Synchronous Buck Converter Edge FET Low Side FET Pulse Width Modulation 1C Parasitic Resistance Inductor Lead Frame Lead Frame Connector Rod Solder Paste Fixture Power Supply Power Supply Device Lead Wire Flat Component Down Extension Lead Integrated Power Supply Module / Encapsulation Module魬 encapsulation material 121071.doc -16- 200810069 72 lead platform 74 lead platform 76 lead platform 78 source pad 80 source pad 82 lead 84 lead 86 lead 88 lead 90 lead 92 lead 94 lead 96 lead 98 lead 100 lead 102 bilateral Cooling Integrated Power Supply Module 106 Lead Platform 108 Lead Platform 110 Lead Platform 112 Lead Platform 114 Source Pad 116 Source Pad 120 Lead Platform 122 Lead Platform 121071.doc 200810069 124 Lead Platform 140 Leaded Bilateral Cooling Integrated Power Supply Module 142 External lead 144 Platform pad 146 First horizontal section 148 Second horizontal section 164 Bilateral cooling integrated power supply module 166 Cutting saw 168 Lead frame 170 Electrical and thermal conduction heat sink 180 Bilateral cooling integrated power supply module 182 Control 1C 184Clamp 186 Clamp 188 Flat part 190 Flat part 192 Lead stage 194 Lead stage 196 Lead stage 198 Encapsulation material 200 Wire bond 202 Clamp 204 Ditch 210 Block mold 212 Partial encapsulation module 121071.doc -18-