TW200819301A - Methods for fabricating a fluid injector - Google Patents
Methods for fabricating a fluid injector Download PDFInfo
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- TW200819301A TW200819301A TW95139511A TW95139511A TW200819301A TW 200819301 A TW200819301 A TW 200819301A TW 95139511 A TW95139511 A TW 95139511A TW 95139511 A TW95139511 A TW 95139511A TW 200819301 A TW200819301 A TW 200819301A
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- fluid
- ejection device
- substrate
- manufacturing
- forming
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- 239000012530 fluid Substances 0.000 title claims abstract description 100
- 238000000034 method Methods 0.000 title claims abstract description 28
- 239000000758 substrate Substances 0.000 claims abstract description 62
- 239000010410 layer Substances 0.000 claims description 72
- 238000004519 manufacturing process Methods 0.000 claims description 26
- 238000005530 etching Methods 0.000 claims description 22
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 15
- 239000011241 protective layer Substances 0.000 claims description 12
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 8
- 239000003792 electrolyte Substances 0.000 claims description 7
- 238000001312 dry etching Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 4
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- 229910000531 Co alloy Inorganic materials 0.000 claims description 2
- QXZUUHYBWMWJHK-UHFFFAOYSA-N [Co].[Ni] Chemical compound [Co].[Ni] QXZUUHYBWMWJHK-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 claims description 2
- 239000002184 metal Substances 0.000 claims description 2
- 229910052759 nickel Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- YCIMNLLNPGFGHC-UHFFFAOYSA-N catechol Chemical compound OC1=CC=CC=C1O YCIMNLLNPGFGHC-UHFFFAOYSA-N 0.000 claims 2
- 241000238631 Hexapoda Species 0.000 claims 1
- PLZVEHJLHYMBBY-UHFFFAOYSA-N Tetradecylamine Chemical compound CCCCCCCCCCCCCCN PLZVEHJLHYMBBY-UHFFFAOYSA-N 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 239000011148 porous material Substances 0.000 claims 1
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 8
- 239000000463 material Substances 0.000 description 6
- 238000005229 chemical vapour deposition Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 229910052732 germanium Inorganic materials 0.000 description 3
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 3
- 229960002050 hydrofluoric acid Drugs 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 239000005388 borosilicate glass Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000012377 drug delivery Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- WOAHJDHKFWSLKE-UHFFFAOYSA-N 1,2-benzoquinone Chemical compound O=C1C=CC=CC1=O WOAHJDHKFWSLKE-UHFFFAOYSA-N 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 206010061218 Inflammation Diseases 0.000 description 1
- LWWGIFZIGLVGIS-UHFFFAOYSA-N P([O-])([O-])[O-].[B+3] Chemical compound P([O-])([O-])[O-].[B+3] LWWGIFZIGLVGIS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004490 TaAl Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- -1 ethylenediamine epoxide Chemical class 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 230000004054 inflammatory process Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
Landscapes
- Particle Formation And Scattering Control In Inkjet Printers (AREA)
Abstract
Description
200819301 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種流體喷射裝置及其製造方法，且 特別有關於一種微流體喷射裝置及其製造方法。 【先前技術】 微流體喷射裝置近來已廣泛地運用於資訊產業，例如 喷墨印表機或類似設備中。隨著微系統工程(micro system engineering)的逐步開發，此種流體喷射裝置逐漸有其他眾 ⑩ 多領域之應用，例如燃料喷射系統(fuel injection system)、 細胞篩選（cell sorting)、藥物释放系統（drug delivery system)、喷印光刻技術(print lithography)及微喷射推進系 統（micro jet propulsion system)等0 第1圖顯示一種習知美國專利號碼6，102,530的單石化 的流體喷射裝置1，其以一矽基底10作為本體，且在石夕基 底10上形成一結構層12，而在矽基底1〇和結構層12之 馨間形成一流體腔14，用以容納流體26 ;而在結構層12上 設有一第一加熱器20、以及一第二加熱器22，第一加熱器 20用以在流體腔14内產生一第一氣泡30，第二加熱器ο 用以在流體腔14内產生一第二氣泡32，以將流體腔I*内 之流體26射出。 上述之單石化的流體噴射裝置1製作步驟依序為：提 供一晶圓作為矽基底10，且在矽基底1〇上形成一結構屑 12,並在矽基底1〇和結構層π之間形成一圖案化犧牲層。 接著，設置流體致動裝置於結構層12上。然後，在結構層 0535-A21738TWF(N2)；A05689；CLAIRE 5 200819301 12上形成一保護層。之後對矽基底背面進行非等向性蝕刻 直至犧牲層裸露，以形成流體通道。移除犧牲層並再一次 對矽基底進行非等向性钱刻，以得到一擴大之流體腔。最 後，依序#刻保護層、結構層形成相互連通的一通孔，其 中通孔與流體腔連通。 在習知之單石化流體喷射裝置的製程中，係以硼矽酸 磷玻璃(BPSG)作為犧牲層，通常需採用高濃度的氳氟酸蝕 刻液移除硼矽酸磷玻璃以形成流體腔，然而在蝕刻硼矽酸 • 磷玻璃過程中，具高腐蝕性之氫氟酸溶液易過蝕刻結構層 而破壞位於基底上之驅動線路等元件。再者，由於硼矽酸 磷玻璃之形成厚度受限於沈積技術，故去除犧牲層後，還 另需對基底進行蝕刻以擴大流體腔之尺寸，而增加製程之 步驟。 因此，目前亟需一種可改善上述缺點的微流體喷射裝 置之製造方法。 _ 【發明内容】 有鑑於此，本發明之目的在於提供一種可改善上述缺 點之流體喷射裝置的製造方法，其在形成流體腔的製程中 降低對於基底上元件之破壞，且可減少製程步驟。本發明 提供一種流體喷射裝置的製造方法，包括：提供一基底， 具有一第一面及一第二面，且該第二面相對於該第一面； 形成一圖案化之多孔性結構區於該基底内；形成一第一結 構層於該基底之該第一面上及覆蓋該圖案化之多孔性結構 區；由該基底之該第二面蝕刻該基底並暴露該圖案化之多 0535-A21738TWF(N2)；A05689；CLAlRE 6 200819301 孔性結構區，以形成一流體通道；去除該圖案化之多孔性 結構區以形成連接該流體通道之一流體腔；以及圖案化該 第一結構層以在一喷孔預定區上形成一開口。 【實施方式】 弟一實施例 以下配合第2A至2H圖說明本發明第一實施例之流體 噴射裝置的製造方法之剖面圖。首先請參照第2A圖，提 供基底100,其具有第一面1〇〇1及第二面1〇〇2，而第一面 參1001係相對於第二面1〇〇2。基底100可包括單晶或多晶材 料，例如單晶矽，較佳者基底100為P型矽。以如化學氣 相沈積之沈積法於基底100之第一面1〇〇1及第二面1〇〇2 上形成罩幕層11〇，罩幕層11〇可包括氮化矽。接著，藉 由微影及蝕刻製程圖案化第一面1001上之罩幕層11〇以暴 露部分之基底100，在此，所暴露之基底部分係流體喷射 裝置之流體腔預定形成之位置。 • 明參知、弟2B圖’藉由電化學|虫刻（eiectr〇chemicai etching ’ ECE)製程於未覆蓋罩幕層no之基底1〇〇中升^成 如多孔矽之多孔性結構區12〇。電化學蝕刻之製程如第4 圖所繪示，將基底1 〇〇置於姓刻槽400中作為陽極，並且 提供如白金之材料作為陰極200，蝕刻槽4〇〇内含有如氫 氟酸溶液之電解液300，於基底1〇〇及陰極2⑽之間連接 一電源供應為500，以提供穩定電流。於電化學餘刻過程 中’基底100内的電洞擴散至基底1〇〇的表面與電解液3〇〇 之界面，而造成基底材料之氧化並溶解於電解液3〇〇中， 0535-A21738TWF(N2)；A05689；CLAIRE 7 200819301 藉此’可在基底100暴露於電解液的區域中均勻的形成大 小約10至20 nm的孔洞，而形成圖案化之多孔性結構區 120。孔洞之大小可藉由調整電流密度、電解液濃度、電化 學姓刻時間以及基底特性加以控制。在一較佳實施例中， 多孔性結構區120之厚度約介於10至20//m為較佳。在 形成多孔性結構區12〇之後，藉由如利用熱磷酸為蝕刻液 之濕勉刻法去除罩幕層120。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a fluid ejection device and a method of fabricating the same, and more particularly to a microfluid ejection device and a method of fabricating the same. [Prior Art] Microfluid ejection devices have recently been widely used in the information industry, such as ink jet printers or the like. With the gradual development of micro system engineering, such fluid ejection devices are gradually being used in other fields, such as fuel injection systems, cell sorting, and drug delivery systems. Drug delivery system), print lithography, and micro jet propulsion system, etc. Figure 1 shows a single petrochemical fluid ejection device 1 of the prior art U.S. Patent No. 6,102,530. A substrate 10 is used as a body, and a structural layer 12 is formed on the stone substrate 10, and a fluid chamber 14 is formed between the substrate 1 and the structure 12 to accommodate the fluid 26; and at the structural layer 12 A first heater 20 is disposed on the first heater 20, and a second heater 22 is formed. The first heater 20 is configured to generate a first bubble 30 in the fluid chamber 14. The second heater ο is used to generate a first bubble in the fluid chamber 14. The second bubble 32 is directed to eject the fluid 26 within the fluid chamber I*. The single petrochemical fluid ejection device 1 described above is sequentially formed by: providing a wafer as the crucible substrate 10, and forming a structural chip 12 on the crucible substrate 1 and forming between the crucible substrate 1 and the structural layer π. A patterned sacrificial layer. Next, a fluid actuating device is provided on the structural layer 12. Then, a protective layer is formed on the structural layer 0535-A21738TWF(N2); A05689; CLAIRE 5 200819301 12. The back side of the germanium substrate is then anisotropically etched until the sacrificial layer is exposed to form a fluid channel. The sacrificial layer is removed and the anisotropic substrate is again anisotropic to obtain an enlarged fluid chamber. Finally, in sequence, the protective layer and the structural layer form a through hole communicating with each other, wherein the through hole communicates with the fluid chamber. In the process of the conventional single petrochemical fluid spraying device, boron phosphite glass (BPSG) is used as a sacrificial layer, and a high concentration of fluoric acid etchant is usually used to remove the borosilicate glass to form a fluid cavity. In the process of etching borosilicate/phosphorus glass, the highly corrosive hydrofluoric acid solution easily over-etches the structural layer to destroy components such as driving lines on the substrate. Furthermore, since the thickness of the borosilicate glass is limited by the deposition technique, after the sacrificial layer is removed, the substrate is further etched to enlarge the size of the fluid chamber, and the process steps are increased. Therefore, there is a need for a method of manufacturing a microfluidic ejection device that can alleviate the above disadvantages. SUMMARY OF THE INVENTION In view of the above, an object of the present invention is to provide a method of manufacturing a fluid ejecting apparatus which can improve the above-mentioned disadvantages, which can reduce damage to components on a substrate in a process of forming a fluid chamber, and can reduce a process step. The present invention provides a method of manufacturing a fluid ejection device, comprising: providing a substrate having a first surface and a second surface, wherein the second surface is opposite to the first surface; forming a patterned porous structural region Forming a first structural layer on the first side of the substrate and covering the patterned porous structural region; etching the substrate from the second side of the substrate and exposing the patterned 0535-A21738TWF (N2); A05689; CLAlRE 6 200819301 a porous structural region to form a fluid passage; removing the patterned porous structural region to form a fluid chamber connecting the fluid passage; and patterning the first structural layer to An opening is formed in the predetermined area of the orifice. [Embodiment] A first embodiment of the present invention will be described with reference to Figs. 2A to 2H for a cross-sectional view showing a method of manufacturing a fluid ejecting apparatus according to a first embodiment of the present invention. Referring first to Figure 2A, a substrate 100 having a first side 1〇〇1 and a second side 1〇〇2 is provided, and a first side 1001 is relative to the second side 1〇〇2. The substrate 100 may comprise a single crystal or polycrystalline material, such as a single crystal germanium, and preferably the substrate 100 is a P-type germanium. A mask layer 11 is formed on the first side 1〇〇1 and the second side 1〇〇2 of the substrate 100 by a deposition method such as chemical vapor deposition, and the mask layer 11〇 may include tantalum nitride. Next, the mask layer 11 on the first side 1001 is patterned by the lithography and etching process to expose portions of the substrate 100, where the exposed substrate portion is where the fluid chamber of the fluid ejection device is predetermined to be formed. • Mingshenzhi, brother 2B diagram' is grown into a porous structural region such as porous tantalum in the base 1〇〇 of the uncovered mask layer no by the eiectr〇chemicai etching 'ECE process. Hey. The process of electrochemical etching is as shown in FIG. 4, the substrate 1 is placed in the surname 400 as an anode, and a material such as platinum is provided as the cathode 200, and the etching tank 4 contains a solution such as hydrofluoric acid. The electrolyte 300 is connected to a power supply of 500 between the substrate 1 and the cathode 2 (10) to provide a stable current. During the electrochemical remnant process, the hole in the substrate 100 diffuses to the interface between the surface of the substrate 1 and the electrolyte 3, causing oxidation of the substrate material and dissolution in the electrolyte 3, 0535-A21738TWF (N2); A05689; CLAIRE 7 200819301 By this, a hole having a size of about 10 to 20 nm can be uniformly formed in a region where the substrate 100 is exposed to the electrolyte to form a patterned porous structural region 120. The size of the holes can be controlled by adjusting the current density, electrolyte concentration, electrochemical time, and substrate properties. In a preferred embodiment, the thickness of the porous structural region 120 is preferably between about 10 and 20/m. After the porous structural region 12 is formed, the mask layer 120 is removed by wet etching such as using hot phosphoric acid as an etching solution.
請參照第2C圖，於基底100之第一面1001上形成第 一結構層130，且第一結構層13〇覆蓋多孔性結構區12〇。 第一結構層130可包括由化學氣相沈積法（CVD)所形成之 低應力的氮化矽，其應力介於〇至3〇〇MPa為佳。於此同 時，基底100之第二面1〇〇2上亦形成第一結構層1〇3。 請參照第2D圖，接著於第一結構層130上形成流體致 動元件140、連接流體致動元件14〇之驅動電路I%、以及 覆盍流體致動兀件140與驅動電路15〇之保護層16〇。流 脰致動元件140可包括形成於結構層上之圖案化電阻 層以作為加熱器（heatei〇，其可湘物理氣相沈積(pvD)， 例如蒸鍍(evaporation)、濺鍍⑽她响，形成如胞2、Referring to FIG. 2C, a first structural layer 130 is formed on the first side 1001 of the substrate 100, and the first structural layer 13A covers the porous structural region 12A. The first structural layer 130 may include low stress tantalum nitride formed by chemical vapor deposition (CVD), preferably having a stress of from 〇 to 3 MPa. At the same time, the first structural layer 1〇3 is also formed on the second surface 1〇〇2 of the substrate 100. Referring to FIG. 2D, the fluid actuating element 140, the driving circuit I% connecting the fluid actuating element 14A, and the protection of the fluid actuating element 140 and the driving circuit 15 are formed on the first structural layer 130. Layer 16〇. The rogue actuating element 140 can include a patterned resistive layer formed on the structural layer to serve as a heater (pvD), such as evaporation, sputtering, etc. Forming as cell 2
TaAl TaN或其他電阻材料。驅動電路w可包括以物理 氣相沉積法(PVD)形成如ρ Λ1^ ^ 、、… 取戈AhCu'AlCu或其他導線材料之 圖案化導電層。而保護層 ^严 160可包括以化學氣相沈積法 (CVD)形成如氮化矽之介電 礼々 預杰 , 包材枓於基底100上，以覆蓋流 體致動元件140與驅動電路 炎&灶甘由位攻p 150 ’其厚度約介於2至3//m 為車父佳。其中保禮層16〇 ® ^ ^ ^ 匕括接觸窗（via)165以作為驅TaAl TaN or other resistive material. The drive circuit w may include a patterned conductive layer formed by physical vapor deposition (PVD) such as ρ Λ 1 ^ , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , The protective layer 160 may include a dielectric coating such as tantalum nitride formed by chemical vapor deposition (CVD), which is coated on the substrate 100 to cover the fluid actuating element 140 and the driving circuit inflammation & The stove is attacked by the position p 150 'the thickness is about 2 to 3 / / m for the car father. The layer of protection layer 16〇 ® ^ ^ ^ includes the contact window (via) 165 as a drive
0535-A21738TWF(N2)；A05689；CLA!RE 200819301 動電路150對外之電性連接。 請麥照第2E圖，於保護層160上形成圖案化之第二結 構層170 U加強兀件之結構強度，第二結構層17〇可包括 如金、白金、鎳、鎳鈷合金之金屬或高分子材料，其厚度 約介於10至20為較佳。圖案化之第二結構層17〇具 有開口 175 ’開口 175係對應於後續形成之流體噴射裝置 之喷孔的位置。 請爹照第2F圖，藉由微影及蝕刻製程圖案化第二面 籲1002上之第一結構層103以暴露部分之基底1〇〇，在此， 所暴露之基底部分係流體噴射裝置之流體通道預定形成之 位置。接著，以圖案化之第一結構層103為罩幕蝕刻基底 100之第二面1002以暴露出多孔性結構區12〇，藉此形成 流體通道105。蝕刻基底100之方法可包括如電漿蝕刻之 乾蝕刻法。在其他實施例中，亦可以圖案化第一結構層1〇3 為罩幕利用乾蝕刻法去除基底i⑽之第二面1〇〇2以形成流 體通道，並且過餘刻部分之多孔性結構區120直至第 一結構層130暴露出來。 請參照第2G圖，去除多孔性結構區120以形成連接流 體通道105之流體腔115。去除多孔性結構區120的方法 可包括利用濕I虫刻法，例如使用氫氧化鉀(KOH)、四甲基 氬氧化氨(Tetramethyl Ammonium Hydroxide，TMAH)或乙 二胺鄰苯二龄(Ethylene Diamine Pyrochatechol，EDP)之餘 刻液蝕刻去除多孔性結構區120。由於多孔性結構區120 相較於基底100較為鬆散，因此在濕蝕刻過程中兩者具有 0535-A21738TWF(N2)；A05689；CLAlRE 9 200819301 頒著的蝕刻選擇比，藉此可利用如氫氧化鉀或低濃度之基 底蝕刻液來去除作為犧牲層的多孔性結構區12Θ，以形成 流體腔115,而不致破壞形成於基底上之驅動電路等元件。 然而在其他實施例中，圖案化第_結構層1〇3以於流 體通道之預定區暴露基底1〇〇之後，接著利用圖案化之第 一結構層1〇3為罩幕，藉由濕蝕刻法自基底1〇〇之第二面 1002去除部分基底丨⑽及多孔性結構區12〇，以形成流體 通逗105及流體腔115，如第2G圖所示。蝕刻基底1〇〇及 多孔性結構區！2〇可包括利用氫氧化鉀(K〇H)為蝕刻液。 5月麥照第2H圖，圖案化保護層16〇及第一結構層13〇 以於鄰近流體致動器140之喷孔預定區上形成連接流體腔 115之噴孔180。形成喷孔180的方法包括以第二結構層 Π0為罩幕，藉由如電漿蝕刻之乾蝕刻法去除部分保護層 160及第一結構層130以於喷孔預定區上形成開口。根^ 上述提供之第一實施例可製作以多孔性結構區為犧牲層之 單石化流體喷射裝置。 曰 弟二貫施例 以下配合第3A至3H圖說明本發明第二實施例之流體 喷射裝置的製造方法之剖面圖。此處與第2a至圖中相 同之材料或結構係標示相同之標號。另外，第至3D圖 之步驟與第2Α至2D圖相同，此處省略其說明。接著請: 照第3Ε圖，在基底1〇〇上之第一結構層13〇上形成流^致 動元件140、連接流體致動元件140之驅動電路15〇、以及 覆蓋流體致動元件140與驅動電路15〇之保護層16〇之 0535-A21738TWF(N2)；A05689；CLAIRE 10 200819301 後’形成圖案化保護層16 射裝置之奴預定區上形成.於流體喷 暴露多孔性結構區120。 為貝孔，且開口 106 影製程及如電裝雜乾 結構層130。在一較佳〜木化保4層_及第一 1 例中，可利用微影及蝕刻繁裎 圖木化保瘦層160及/或第—妗 、蚀到衣私 10ό以及接觸窗165。 € ，以同時形成開口0535-A21738TWF(N2); A05689; CLA!RE 200819301 The dynamic circuit 150 is externally connected. In the photo of FIG. 2E, the patterned second structural layer 170 U is formed on the protective layer 160 to strengthen the structural strength of the element. The second structural layer 17〇 may include metal such as gold, platinum, nickel, nickel-cobalt alloy or The polymer material preferably has a thickness of about 10 to 20. The patterned second structural layer 17 has an opening 175' opening 175 which corresponds to the location of the orifice of the subsequently formed fluid ejection device. Referring to FIG. 2F, the first structural layer 103 on the second surface 1002 is patterned by a lithography and etching process to expose a portion of the substrate 1 , where the exposed substrate portion is a fluid ejection device. The location at which the fluid passage is intended to be formed. Next, the second side 1002 of the substrate 100 is etched with the patterned first structural layer 103 as a mask to expose the porous structural regions 12, thereby forming the fluid channel 105. The method of etching the substrate 100 may include a dry etching method such as plasma etching. In other embodiments, the first structural layer 1〇3 may also be patterned as a mask to remove the second surface 1〇〇2 of the substrate i(10) by dry etching to form a fluid channel, and the porous structural region of the remaining portion 120 until the first structural layer 130 is exposed. Referring to Figure 2G, the porous structural region 120 is removed to form a fluid chamber 115 that connects the fluid passages 105. The method of removing the porous structural region 120 may include utilizing a wet I weaving method such as using potassium hydroxide (KOH), Tetramethyl Ammonium Hydroxide (TMAH) or ethylenediamine epoxide (Ethylene Diamine). The residual structure region 120 is removed by etching of Pyrochatechol (EDP). Since the porous structural region 120 is relatively looser than the substrate 100, both have an etching selectivity ratio of 0535-A21738TWF(N2); A05689; CLAlRE 9 200819301 during wet etching, whereby potassium hydroxide such as potassium hydroxide can be utilized. Or a low concentration of the substrate etchant to remove the porous structural region 12 as a sacrificial layer to form the fluid cavity 115 without damaging components such as a driver circuit formed on the substrate. In other embodiments, however, the patterned first structural layer 1〇3 is used to expose the substrate 1〇〇 after the predetermined region of the fluid channel, and then the patterned first structural layer 1〇3 is used as a mask by wet etching. A portion of the substrate raft (10) and the porous structural region 12A are removed from the second side 1002 of the substrate 1 to form a fluid entanglement 105 and a fluid chamber 115, as shown in FIG. 2G. Etching the substrate 1〇〇 and the porous structure area! 2〇 may include the use of potassium hydroxide (K〇H) as an etchant. In May 2nd, the patterned protective layer 16 and the first structural layer 13 are formed to form an orifice 180 connecting the fluid chamber 115 adjacent to the predetermined area of the orifice of the fluid actuator 140. The method of forming the orifices 180 includes removing a portion of the protective layer 160 and the first structural layer 130 by dry etching such as plasma etching to form an opening in a predetermined region of the orifice by using the second structural layer Π0 as a mask. The first embodiment provided above can produce a single petrochemical fluid ejecting apparatus having a porous structural region as a sacrificial layer. BRIEF DESCRIPTION OF THE DRAWINGS A cross-sectional view showing a method of manufacturing a fluid ejecting apparatus according to a second embodiment of the present invention will be described below with reference to Figs. 3A to 3H. Here, the same materials or structures as those in Fig. 2a are denoted by the same reference numerals. Further, the steps from the 3rd to 3D are the same as the second to 2D, and the description thereof is omitted here. Next: according to FIG. 3, a flow element 13 is formed on the first structural layer 13〇 on the substrate 1 , a driving circuit 15 is connected to the fluid actuating element 140, and the fluid actuating element 140 is covered. The drive layer 15 is protected by a protective layer 16 of 0535-A21738TWF (N2); A05689; CLAIRE 10 200819301 after the forming of the patterned protective layer 16 device is formed on the predetermined area of the slave. The fluid spray exposes the porous structural region 120. It is a ben hole, and the opening 106 is formed by a process such as an electric dry structure layer 130. In a preferred embodiment, the first layer and the first one, lithography and etching may be utilized to form the thin layer 160 and/or the first layer, and the contact window 165. € to simultaneously form an opening
第沖圖，於保護層160上更形成圖案化之第二 、、:構層Π〇Μ強元件之結構強度 : 孔預定區上，_於開J;= 此處省略其㈣。材料厚度如卜實施例所述， 明m 3G 1 ’藉由微影及蝕刻製程圖案化第二面 2 =之第-結構層1G3以暴露部分之基底·，在此， 所暴露之基底部分係流體噴射裝置之流體通道預定形成之 位置。接著，以圖案化之第一結構層1〇3為罩幕自第二面 1002蝕刻基底！〇〇以暴露出多孔性結構區12〇，藉此形成 流體通道105。接著請參照第3H圖，以如濕蝕刻法去除多 孔性結構區120以形成連接流體通道1〇5及開口 106之流 體腔115。在第3G至3H圖中形成流體通道105流體腔115 的方法與弟2F至2G相同，此處不再加以詳述。 根據上述提供之第二實施例可製作以多孔性結構區為 犧牲層之單石化流體噴射裝置，於第二實施例中，在去除 多孔性結構區以形成流體腔之前，即完成蝕刻結構層以形 0535-A21738TWF(N2)；A05689；CLAIRE 11 200819301 成喷孔之步驟，如此可避免於第一實施例中以乾蝕刻去除 結構層而形成喷孔之過程中，發生過蝕刻流體腔下之基底 的情況。 根據上述之實施例，由於在形成作為犧牲層之多孔性 結構區時即定義出流體腔之尺寸，故可不需額外之擴大流 體腔之製程。並且以如多孔矽之多孔性結構區作為犧牲層 時，可利用如氫氧化鉀（KOH)溶液、四曱基氫氧化氨 (Tetramethyl Ammonium Hydroxide，TMAH)、乙二胺鄰苯 籲二酚(Ethylene Diamine Pyrochatechol，EDP)或其他低濃度 蝕刻液去除犧牲層，如此，可避免習知技術中以bpsg作 為犧牲層時，氫氟酸餘刻液對基底上之元件造成的破壞。 雖然本發明已以較佳實施例揭露如上，然其並非用以 限定本發明，任何熟習此技藝者，在不脫離本發明之精神 和範圍内，當可作些許之更動與潤飾，因此本發明之保護 範圍當視後附之申請專利範圍所界定者為準。The first punch pattern is further patterned on the protective layer 160, and the structural strength of the layered bare element: on the predetermined area of the hole, _ is opened J; = (4) is omitted here. The thickness of the material is as described in the embodiment, and the second surface 2 = the first structural layer 1G3 is patterned by the lithography and etching process to expose a portion of the substrate. Here, the exposed portion of the substrate is The fluid passage of the fluid ejection device is predetermined to be formed. Next, the substrate is etched from the second side 1002 with the patterned first structural layer 1〇3 as a mask! The crucible is exposed to expose the porous structural region 12, thereby forming the fluid passage 105. Next, referring to Fig. 3H, the porous structure region 120 is removed by wet etching to form a fluid cavity 115 connecting the fluid channel 1〇5 and the opening 106. The method of forming the fluid passage 105 fluid chamber 115 in the 3G to 3H drawings is the same as that of the brothers 2F to 2G and will not be described in detail herein. According to the second embodiment provided above, a single petrochemical fluid ejecting device having a porous structural region as a sacrificial layer can be fabricated. In the second embodiment, the etching of the structural layer is completed before the porous structural region is removed to form a fluid cavity. Form 0535-A21738TWF(N2); A05689; CLAIRE 11 200819301, the step of forming a hole, so as to avoid the substrate under the over-etching fluid cavity during the process of forming the nozzle hole by dry etching to remove the structure layer in the first embodiment Case. According to the above embodiment, since the size of the fluid chamber is defined when the porous structural region as the sacrificial layer is formed, the process of the fluid chamber can be eliminated without additional processing. And when a porous structural region such as porous tantalum is used as a sacrificial layer, for example, potassium hydroxide (KOH) solution, Tetramethyl Ammonium Hydroxide (TMAH), ethylenediamine orthoquinone (Ethylene) can be used. Diamine Pyrochatechol (EDP) or other low-concentration etching solution removes the sacrificial layer. Thus, the damage of the hydrofluoric acid residue to the components on the substrate when the bpsg is used as the sacrificial layer in the prior art can be avoided. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.
0535-A21738TWF(N2)；A05689；CLAiRE 12 200819301 【圖式簡單說明】 第1圖係繪示習知單石化的流體喷射裝置之示意圖； 第2A至2H圖係繪示本發明第一實施例之流體喷射裝 置的製造方法之剖面圖； 第3A至3H圖係繪示本發明第二實施例之流體喷射裝 置的製造方法之剖面圖；以及 第4圖係繪示本發明實施例之以電化學蝕刻法形成多 孔性結構區之不意圖。 【主要元件符號說明】 1〜習知之流體喷射裝置； 10〜矽基底； 12〜結構層； 14〜流體腔； 20〜第一加熱器； 22〜第二加熱器； _ 26〜流體； 1⑽〜基底； 105〜流體通道； 106〜開口； 110〜罩幕層； 115〜流體腔； 1001〜基底之第一面； 1002〜基底之第二面； 0535-A21738TWF(N2)；A05689；CLA!RE 13 200819301 120〜 多孔性結構區； 130、 103〜第一結構層 140〜 流體致動器； 150〜 驅動電路； 160〜 保護層； 165〜 •接觸窗； 170〜 ，第二結構層； 175〜 '開口； 180〜 /喷孔； 200〜陰極； 300〜 -電解液； 400〜勉刻槽； 500〜 /電源供應裔。0 535 535 535 535 535 535 535 535 FIG. 3A to 3H are cross-sectional views showing a method of manufacturing a fluid ejecting apparatus according to a second embodiment of the present invention; and FIG. 4 is an electrolysis showing an embodiment of the present invention. The etching method is not intended to form a porous structural region. [Main component symbol description] 1 ~ conventional fluid ejection device; 10 ~ 矽 substrate; 12 ~ structural layer; 14 ~ fluid cavity; 20 ~ first heater; 22 ~ second heater; _ 26 ~ fluid; 1 (10) ~ Substrate; 105~fluid channel; 106~opening; 110~mask layer; 115~fluid cavity; 1001~first side of substrate; 1002~second side of substrate; 0535-A21738TWF(N2);A05689;CLA!RE 13 200819301 120~ porous structural region; 130, 103~ first structural layer 140~ fluid actuator; 150~ drive circuit; 160~ protective layer; 165~ • contact window; 170~, second structural layer; 'opening; 180 ~ / orifice; 200 ~ cathode; 300 ~ - electrolyte; 400 ~ engraved groove; 500 ~ / power supply.
0535-A21738TWF(N2)；A05689；CLAIRE 140535-A21738TWF(N2);A05689;CLAIRE 14
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