200818996 (1) 九、發明說明 【發明所屬之技術領域】 本發明是有關對液晶顯示裝置（LCD)等之平面顯示 器（FPD )製造用的玻璃基板等的基板施行電漿處理的感 應耦合電漿處理裝置及電漿處理方法。 【先前技術】 • 有關液晶顯不裝置（L C D )等的製造工程，爲了對玻 璃基板施行特定處理’使用電漿蝕刻裝置和電漿化學蒸氣 沉積成膜裝置等的各種電漿處理裝置。此種電漿處理裝置 雖然以往多數使用電容耦合電漿處理裝置，但近來具有所 謂可得到高真空度且高密度電漿之優點的感應耦合電漿（ Inductively Coupled Plasma ： ICP )處理裝置深受注目。 感應耦合電漿處理裝置是屬於在收容被處理基板之處 理容器的介電質窗之外側配置高頻天線，對處理容器內供 • 給處理氣體，並且對該高頻天線供給高頻電力，藉此使處 理容器內產生感應耦合電漿，藉由該感應耦合電漿對被處 理基板施行特定的電漿處理。作爲感應耦合電漿處理裝置 的高頻天線，多數使用形成平面狀之所定圖案的平面天線 〇 在使用此種平面天線的感應耦合電漿處理裝置，雖是 在處理容器內的平面天線正下方的空間產生電漿’但此時 ，因具有高電漿密度區域與低電漿區域的分布’與在天線 正下方之各位置的電場強度成正比的情形’故平面天線的 -4 - 200818996 (2) 圖案形狀成爲決定電漿密度分佈的重要因素。 可是對應一台感應耦合電漿處理裝置的應用並不限於 一個，必需對應於複數的應用。此時’爲了於各項應用中 進行均勻的處理，必需改變電漿密度分佈’因此以高密度 ‘ 區域及低密度區域之位置不同的方式’準備複數個不同形 ^ 狀的天線，配合應用更換天線。 但配合複數個應用來準備複數個天線，更換每個不同 φ 的天線需要非常多的勞力，並且近來因LCD用的玻璃基 板顯著的大型化，故天線製造費用也變成高價位。而且， 像這樣即使準備複數個天線，在所賦予的應用中亦未必限 定最佳條件，就可藉由製造條件的調整得到對應。 對此，在專利文獻1中，揭示一種將螺旋天線分割爲 內側部分與外側部分之兩個部分，以流入各自獨立的高頻 電流之方式所形成的電漿處理裝置。若藉由此種構成，即 可藉由調整供給至內側部分的功率與供給至外側部分的功 • 率，來控制電漿密度分佈。 但在專利文獻1所記載的技術中，雖設有螺旋天線之 內側部分用的高頻電源與外側部分用的高頻電源之兩個高 頻電源，或必需設置電力分配電路，裝置變大，裝置成本 提高。而且此時，電損大、電力成本昇高，且難以進行高 精度的電漿密度分佈控制。 [專利文獻1]日本特許第3077009號公報（第5圖 、段落 0 0 2 6 〜0 0 2 8 ) -5- 200818996 (3) 【發明內容】 [發明欲解決之課題] 本發明爲有鑑於相關情形所完成的發明，其目的爲提 供一種不更換天線、不提高裝置成本及電力成本，且能進 行高精度之電漿密度分佈控制的感應耦合電漿處理裝置及 感應耦合電漿處理方法。 • [用以解決課題之手段] 爲解決上述課題，在本發明之第1觀點中，提供一種 感應耦合電漿處理裝置，其特徵爲：具備：收容被處理基 板並施行電漿處理的處理室；和在前述處理室內載置有被 處理基板的載置台；和對前述處理室內供給處理氣體的處 理氣體供給系統；和在前述處理室內進行排氣的排氣系統 ;和具有複數個天線部的高頻天線，該高頻天線是介設介 電質構件而配置在前述處理室之外部，且供給高頻電力， • 藉此在前述處理室內形成具有各自不同之電場強度分佈的 感應電場；和連接於包含前述各天線部的天線電路之中的 至少一個，來調節該連接的天線電路之阻抗的阻抗調節手 I 段’藉由前述阻抗調節手段所致之阻抗調節，來控制前述 複數個天線部的電流値，且控制形成在前述處理室內之感 應耦合電漿的電漿密度分佈。 在上述第1觀點中，前述阻抗調節手段，可爲具有可 變電容器者。並且，前述阻抗調節手段乃事先設定爲可對 每個應用得到最佳的電漿密度分佈之調節參數。 -6- 200818996 (4) 在本發明之第2觀點中，提供一種感應耦合電漿處理 裝置，其特徵爲：具備：收容被處理基板並施行電漿處理 的處理室；和在前述處理室內載置有被處理基板的載置台 和對前述處理室內供給處理氣體的處理氣體供給系統； 和在前述處理室內進行排氣的排氣系統；和介設介電質構 * 件而配置在前述處理室之上方，且供給高頻電力，藉此在 前述處理室內具有：主要在外側部分形成感應電場之外側 φ 天線部與主要在內側部分形成感應電場之內側天線部的高 頻天線；和連接在前述外側天線部與前述內側天線部之一 方的可變電容器，藉由調節前述可變電容器之電容，來調 整包含前述外側天線部的外側天線電路以及包含前述内側 天線部的內側天線電路之任一個的阻抗，以控制前述外側 天線部以及前述內側天線部的電流値，且控制形成在前述 處理室內之感應耦合電漿的電漿密度分佈。 在上述第2觀點中，可構成前述外側天線部係在對應 • 於前述處理室之外側部分的位置，緊密地配置天線用線’ 前述內側天線部係在對應於前述處理室之內側部分的位置 ，緊密地配置天線用線。並且，前述外側天線部以及前述 內側天線部，可爲具有複數個天線用線的多層天線。進而 ，更具有事先設定爲可對每個應用得到最佳的電漿密度分 佈之前述可變電容器的位置’在選擇特定應用之際’以事 先設定對應於該應用的前述可變電容器之位置的最佳値之 方式，來控制可變電容器之位置的控制手段。 在本發明之第3觀點中，提供一種感應耦合電漿處理 200818996 (5) 方法，其特徵爲：將基板載置在設於處理室之內部的載置 台，且具有複數個天線部的高頻天線，該高頻天線是介設 介電質構件而設置在處理室之外部，且供給高頻電力，藉 此在前述處理室內形成具有各自不同之電場強度分佈的感 應電場，對處理室內供給處理氣體，並且邊對前述高頻天 線供給高頻電力、邊調節包含前述各天線部的天線電路之 中的至少一個阻抗，來控制前述複數個天線部的電流値， φ 且控制形成在前述處理室內之感應耦合電漿的電漿密度分 佈。 在上述第3觀點中，以調整前述阻抗的天線電路，事 先求得可對每個應用得到最佳的電漿密度分佈之阻抗的調 節參數，在選擇特定應用之際，以事先求得對應於該應用 之前述調節參數的最佳値的方式，來進行電漿處理。 在本發明之第4觀點中，提供一種感應耦合電漿處理 方法，其特徵爲：將基板載置在設於處理室之內部的載置 # 台，介設介電質構件而設置在處理室之外部，且供給高頻 電力，藉此在前述處理室內具有：主要在外側部分形成感 應電場之外側天線部與主要在內側部分形成感應電場之內 側天線部的高頻天線，在包含前述外側天線部的外側天線 電路以及包含前述内側天線部的內側天線電路之任一個設 置可變電容器，對前述處理室內供給處理氣體，並且邊對 前述高頻天線供給高頻電力、邊調節前述可變電容器之電 容，藉此調節該天線電路的阻抗，來控制前述外側天線部 以及前述內側天線部的電流値，且控制形成在前述處理室 -8 - 200818996 (6) 內之感應耦合電漿的電漿密度分佈。 在上述第4觀點中，事先求得可對每個應用得到最佳 的電漿密度分佈之前述可變電容器的位置，在選擇胃 用之際，以事先求得對應於該應用的前述可變電容器之位 置的最佳値之方式，來調整可變電容器的位置，進行電_ . 處理。 在本發明之第5觀點中，提供一種電腦可讀取記憶媒 φ 體，屬於記憶著在電腦上動作的控制程式之電腦可讀取言己 憶媒體，其特徵爲：使前述控制程式，於實行時，以進行 上述第3或第4方法的方式，來控制感應耦合電漿處理裝 置° [發明效果] 若藉由本發明，因具有複數個天線部，該天線部形成 高頻天線具有各自不同之電場強度分佈的感應電場，在包 含各天線部的天線電路之中的至少一個，設置調節該所連 接的天線電路之阻抗的阻抗調節手段，藉由阻抗調節手段 所致之阻抗調節，來控制複數個天線部的電流値，且控制 形成在處理室內之感應耦合電漿的電漿密度分佈，故不需 要更換高頻天線，且不需要天線更換的勞力和對每個應用 準備天線的成本。並且，因只要藉由阻抗調節來進行複數 個天線部的電流控制，故不存在裝置變大、高成本，或電 力成本提高等之缺點，控制的精度也高。 -9 - 200818996 (7) 【實施方式】 [用以實施發明的最佳形態] 以下參照所附圖面針對本發明之實施形態做說明。第 1圖是表示有關本發明之一實施形態的感應耦合電漿處理 裝置之剖面圖，第2圖是表示運用於該感應耦合電漿處理 裝置的高頻天線之俯視圖。該裝置是運用於例如在FPD 用玻璃基板上形成薄膜電晶體時的金屬膜、ITO膜、氧化 φ 膜等的蝕刻、光阻膜的灰化處理。在此，FPD舉例有：液 晶顯示器（LCD )、發光二極體（LED )顯示器、電激發 光（Electro Luminescence : EL)顯示器、螢光顯示管（ Vacuum Fluorescent Display ·· VFD )、電漿顯示面板（ PDP )等。 該電漿處理裝置，係具有以導電性材料，例如：內壁 面被陽極氧化處理的鋁所形成的角筒形狀的氣密本體容器 1 °該本體容器1是可分解的被組裝，且藉由接地線1 a被 ^ 接地。本體容器1是藉由介電質壁2在上下區劃成天線室 3以及處理室4。因而，介電質壁2是構成處理室4的頂 . 壁。介電質壁2是以A1203等之陶瓷、石英等所構成。 • 在介電質壁2的下側部分，嵌入有處理氣體供給用的 淋浴頭框體11。淋浴頭框體11設成十字狀，成爲由下支 撐著介電質壁2的構造。再者，支撐上述介電質壁2的淋 浴頭框體11’是成爲藉由複數根懸桿（圖未表示），被 吊掛在本體容器1之頂部的狀態。 該淋浴頭框體1 1是以導電性材料，希望爲金屬，例 -10- 200818996 (8) 如不會產生污染物的方式，其內面被陽極氧化處理的鋁所 構成。在該淋浴頭框體11形成有水平延伸的氣體流路12 ，在該氣體流路12，連通有朝向下方延伸的複數個氣體 吐出孔12a。一方面，在介電質壁2的上面中央，是以連 通到該氣體流路12的方式，設有氣體供給管20a。氣體 供給管20a，是從本體容器1的頂部朝其外側貫通，且連 接到包含處理氣體供給源以及閥系統等的處理氣體供給系 φ 統20。因而，在電漿處理中，由處理氣體供給系統20所 供給的處理氣體，是經由氣體供給管20a供給到淋浴頭框 體1 1內’從其下面的氣體供給孔i 2a朝處理室4內吐出 〇 在本體容器1之天線室3的側壁3 a與處理室4的側 壁4a之間，設有朝內側突出的支撐架5，且在該支撐架5 之上載置著介電質壁2。 在天線室3內，是在介電質壁2之上，以面對於介電 Φ 質壁2的方式配設有高頻（RF)天線13。該高頻天線13 是藉由以絕緣材料所形成的間隔件1 7離開介電質壁2。 高頻天線1 3具有：在外側部分緊密配置天線用線的外側 天線部1 3 a、和在內側部分緊密配置天線用線的內側天線 部13b。該等外側天線部13a以及內側天線部13b，如第 2圖所示，構成螺旋狀的多層（四層）天線。再者，多層 天線的構成，可爲內側外側均爲兩層的構成，或者亦可爲 內側兩層、外側四層的構成。 外側天線部13a是以每90°錯開位置且整體爲略矩形 -11 -[Technical Field] The present invention relates to an inductively coupled plasma which is subjected to plasma treatment on a substrate such as a glass substrate for manufacturing a flat panel display (FPD) such as a liquid crystal display device (LCD). Processing device and plasma processing method. [Prior Art] A manufacturing process for a liquid crystal display device (L C D ) or the like, in order to perform a specific treatment on a glass substrate, a plasma processing device using a plasma etching device and a plasma chemical vapor deposition film forming device. Although such a plasma processing apparatus has conventionally used a capacitively coupled plasma processing apparatus, recently, an Inductively Coupled Plasma (ICP) processing apparatus having a high vacuum degree and a high density plasma has been attracting attention. . In the inductively coupled plasma processing apparatus, a high frequency antenna is disposed outside the dielectric window of the processing container accommodating the substrate to be processed, and a processing gas is supplied to the processing container, and high frequency power is supplied to the high frequency antenna. This causes inductively coupled plasma to be generated within the processing vessel, and the inductively coupled plasma is subjected to a specific plasma treatment of the substrate to be processed. As a high-frequency antenna of the inductively coupled plasma processing apparatus, a planar antenna having a planar pattern is often used, and an inductively coupled plasma processing apparatus using such a planar antenna is directly under the planar antenna in the processing container. Space generates plasma 'but at this time, because the distribution of high plasma density region and low plasma region is proportional to the electric field strength at each position directly below the antenna', the planar antenna is -4 - 200818996 (2 The shape of the pattern becomes an important factor in determining the plasma density distribution. However, the application of an inductively coupled plasma processing apparatus is not limited to one and must correspond to a plurality of applications. At this time, in order to perform uniform processing in each application, it is necessary to change the plasma density distribution. Therefore, a plurality of antennas of different shapes are prepared in a manner different in the position of the high-density region and the low-density region, and the application is replaced. antenna. However, in order to prepare a plurality of antennas in combination with a plurality of applications, it takes a lot of labor to replace each antenna of different φ, and recently, the glass substrate for LCD has been significantly enlarged, so that the antenna manufacturing cost has become a high price. Further, even if a plurality of antennas are prepared as described above, the optimum conditions are not necessarily limited in the application to be applied, and the correspondence can be obtained by adjusting the manufacturing conditions. On the other hand, Patent Document 1 discloses a plasma processing apparatus in which a helical antenna is divided into two portions of an inner portion and an outer portion to flow in independent high-frequency currents. According to this configuration, the plasma density distribution can be controlled by adjusting the power supplied to the inner portion and the power supplied to the outer portion. However, in the technique described in Patent Document 1, although two high-frequency power sources for the high-frequency power source for the inner portion of the helical antenna and the high-frequency power source for the outer portion are provided, or the power distribution circuit is required, the device becomes large. The cost of the device is increased. Further, at this time, the electric loss is large, the electric power cost is increased, and it is difficult to perform high-precision plasma density distribution control. [Patent Document 1] Japanese Patent No. 30770009 (Fig. 5, paragraph 0 0 2 6 to 0 0 2 8) - 5 - 200818996 (3) [Disclosure] [The object to be solved by the invention] The invention completed in the related art aims to provide an inductively coupled plasma processing apparatus and an inductively coupled plasma processing method capable of performing high-precision plasma density distribution control without replacing an antenna, improving device cost and power cost, and performing high-precision plasma density distribution control. [Means for Solving the Problems] In order to solve the above problems, a first aspect of the present invention provides an inductively coupled plasma processing apparatus including: a processing chamber for accommodating a substrate to be processed and performing plasma processing And a mounting table on which the substrate to be processed is placed in the processing chamber; a processing gas supply system that supplies the processing gas to the processing chamber; and an exhaust system that exhausts the processing chamber; and a plurality of antenna portions a high frequency antenna which is disposed outside the processing chamber via a dielectric member and supplies high frequency power, thereby forming an induced electric field having a different electric field intensity distribution in the processing chamber; Controlling at least one of the antenna circuits including the antenna portions to adjust the impedance of the connected antenna circuit, and adjusting the impedance adjustment by the impedance adjustment means to control the plurality of antennas The current of the portion is 値, and the plasma density distribution of the inductively coupled plasma formed in the aforementioned processing chamber is controlled. In the above first aspect, the impedance adjusting means may be a variable capacitor. Further, the aforementioned impedance adjusting means is previously set to an adjustment parameter which can obtain an optimum plasma density distribution for each application. -6-200818996 (4) In the second aspect of the invention, there is provided an inductively coupled plasma processing apparatus comprising: a processing chamber for accommodating a substrate to be processed and performing a plasma treatment; and a mounting table on which the substrate to be processed is placed, a processing gas supply system that supplies the processing gas to the processing chamber, an exhaust system that exhausts in the processing chamber, and a dielectric material disposed in the processing chamber a high-frequency electric power is supplied thereto, and in the processing chamber, a high-frequency antenna in which an antenna portion is formed on the outer side of the induced electric field and an inner antenna portion that forms an induced electric field mainly at the inner portion is formed mainly in the outer portion; The variable capacitor of one of the outer antenna portion and the inner antenna portion adjusts the capacitance of the variable capacitor to adjust one of the outer antenna circuit including the outer antenna portion and the inner antenna circuit including the inner antenna portion. Impedance to control the current 値 of the outer antenna portion and the inner antenna portion, and the control is formed in the foregoing The plasma density distribution of the inductively coupled plasma in the chamber. In the second aspect, the outer antenna portion may be disposed at a position corresponding to the outer portion of the processing chamber, and the antenna wire may be closely arranged. The inner antenna portion is located at an inner portion corresponding to the processing chamber. , configure the antenna line closely. Further, the outer antenna portion and the inner antenna portion may be a multilayer antenna having a plurality of antenna wires. Further, the position of the variable capacitor of the aforementioned variable capacitor which is set in advance to obtain an optimum plasma density distribution for each application is selected in the case of selecting a specific application to previously set the position of the aforementioned variable capacitor corresponding to the application. The best way to control the position of the variable capacitor. According to a third aspect of the present invention, there is provided a method of inductively coupled plasma treatment of 200818996 (5), characterized in that a substrate is placed on a mounting table provided inside a processing chamber, and a high frequency having a plurality of antenna portions An antenna that is disposed outside the processing chamber by interposing a dielectric member and supplies high-frequency power, thereby forming an induced electric field having a different electric field intensity distribution in the processing chamber, and supplying the treatment chamber to the processing chamber a gas, and supplying at least one of an antenna circuit including each of the antenna portions while supplying high-frequency power to the high-frequency antenna, and controlling a current 値, φ of the plurality of antenna portions and controlling the formation in the processing chamber The plasma density distribution of the inductively coupled plasma. In the third aspect described above, the antenna circuit for adjusting the impedance is obtained in advance to obtain an adjustment parameter for obtaining an impedance of an optimum plasma density distribution for each application, and when selecting a specific application, it is determined in advance to correspond to The plasma treatment is performed in the manner in which the aforementioned optimum parameters of the adjustment parameters are applied. According to a fourth aspect of the present invention, there is provided an inductively coupled plasma processing method, characterized in that a substrate is placed on a mounting table provided inside a processing chamber, and a dielectric member is interposed and disposed in the processing chamber. The high-frequency power is supplied to the outside of the processing chamber, and the high-frequency antenna having the antenna portion on the outer side of the induced electric field and the inner antenna portion forming the induced electric field mainly in the inner portion is formed mainly in the outer portion, and the outer antenna is included in the outer antenna. A variable capacitor is provided in any one of the outer antenna circuit and the inner antenna circuit including the inner antenna portion, and the processing gas is supplied to the processing chamber, and the variable capacitor is adjusted while supplying high frequency power to the high frequency antenna. a capacitor for adjusting an impedance of the antenna circuit to control a current 値 of the outer antenna portion and the inner antenna portion, and controlling a plasma density of the inductively coupled plasma formed in the processing chamber -8 - 200818996 (6) distributed. In the fourth aspect described above, the position of the variable capacitor which can obtain an optimum plasma density distribution for each application is obtained in advance, and when the stomach is selected, the aforementioned variable corresponding to the application is obtained in advance. The position of the capacitor is optimally adjusted to adjust the position of the variable capacitor for processing. According to a fifth aspect of the present invention, a computer readable memory medium φ body is provided, which is a computer readable memory medium that memorizes a control program that operates on a computer, and is characterized in that: In the implementation, the inductively coupled plasma processing apparatus is controlled in such a manner as to perform the third or fourth method. [Invention Effect] According to the present invention, since the antenna portion has a plurality of antenna portions, the antenna portion forms a high frequency antenna having a different The induced electric field of the electric field intensity distribution is provided at least one of the antenna circuits including the antenna portions, and an impedance adjusting means for adjusting the impedance of the connected antenna circuit is provided, and the impedance adjustment by the impedance adjusting means is used to control The current 値 of the plurality of antenna portions controls the plasma density distribution of the inductively coupled plasma formed in the processing chamber, so that it is not necessary to replace the high frequency antenna, and the labor for antenna replacement and the cost of preparing the antenna for each application are not required. Further, since the current control of the plurality of antenna sections is performed by the impedance adjustment, there is no disadvantage that the apparatus becomes large, the cost is high, or the power cost is improved, and the control accuracy is also high. -9 - 200818996 (7) [Embodiment] [Best Mode for Carrying Out the Invention] Hereinafter, embodiments of the present invention will be described with reference to the drawings. Fig. 1 is a cross-sectional view showing an inductively coupled plasma processing apparatus according to an embodiment of the present invention, and Fig. 2 is a plan view showing a high frequency antenna used in the inductively coupled plasma processing apparatus. This apparatus is used for, for example, etching of a metal film, an ITO film, an oxidized φ film, or the like, and ashing treatment of a photoresist film when a thin film transistor is formed on a glass substrate for FPD. Here, examples of the FPD include a liquid crystal display (LCD), a light emitting diode (LED) display, an electroluminescence (EL) display, a fluorescent display tube (VFD), and a plasma display panel. (PDP) and so on. The plasma processing apparatus is a gas-tight body container having a rectangular tube shape formed of an electrically conductive material such as aluminum whose inner wall surface is anodized, and the body container 1 is disassembled and assembled by Ground wire 1 a is grounded. The main body container 1 is divided into an antenna chamber 3 and a processing chamber 4 by upper and lower sides of the dielectric wall 2. Thus, the dielectric wall 2 is the top wall constituting the processing chamber 4. The dielectric wall 2 is made of ceramic such as A1203 or quartz. • A shower head housing 11 for supplying a processing gas is fitted in a lower portion of the dielectric wall 2. The shower head housing 11 is formed in a cross shape and has a structure in which the dielectric wall 2 is supported by the lower portion. Further, the shower head housing 11' supporting the dielectric wall 2 is in a state of being suspended from the top of the main body container 1 by a plurality of suspension rods (not shown). The shower head housing 1 1 is made of a conductive material, and is desirably a metal. For example, -10-200818996 (8), the inner surface of which is made of anodized aluminum. A horizontally extending gas flow path 12 is formed in the shower head housing 11, and a plurality of gas discharge holes 12a extending downward are connected to the gas flow path 12. On the other hand, a gas supply pipe 20a is provided at the center of the upper surface of the dielectric wall 2 so as to be connected to the gas flow path 12. The gas supply pipe 20a penetrates from the top of the main body container 1 to the outside thereof, and is connected to a process gas supply system 20 including a processing gas supply source, a valve system, and the like. Therefore, in the plasma processing, the processing gas supplied from the processing gas supply system 20 is supplied into the shower head housing 1 through the gas supply pipe 20a 'from the gas supply hole i 2a on the lower side thereof toward the processing chamber 4 The discharge frame 5 is provided between the side wall 3a of the antenna chamber 3 of the main body container 1 and the side wall 4a of the processing chamber 4, and a support frame 5 projecting inward is provided, and the dielectric wall 2 is placed on the support frame 5. In the antenna chamber 3, a high frequency (RF) antenna 13 is disposed on the dielectric wall 2 so as to face the dielectric Φ wall 2. The high frequency antenna 13 is separated from the dielectric wall 2 by a spacer 17 formed of an insulating material. The radio-frequency antenna 13 has an outer antenna portion 13a that closely arranges the antenna wires in the outer portion, and an inner antenna portion 13b in which the antenna wires are closely arranged in the inner portion. As shown in Fig. 2, the outer antenna portion 13a and the inner antenna portion 13b constitute a spiral multilayer (four-layer) antenna. Further, the configuration of the multilayer antenna may be a configuration in which the inner side outer side is two layers, or the inner side two layers and the outer side four layers. The outer antenna portion 13a is shifted every 90° and is entirely rectangular in shape -11 -
200818996 Ο) 狀的方式來配置四個天線用線，其中央部爲空 爲朝各天線用線經由中央的四個端子22a供電 天線用線的外端部，爲了改變天線用線的電壓 設電容器1 8a而連接並接地到天線室3的側壁 介設電容器18a，直接的接地，進而也可在端 部分或天線用線的中途，例如彎曲部100a插J 而且，內側天線部1 3b是在外側天線部之 間，以每90°錯開位置且整體爲略矩形狀的方 個天線用線。並且成爲朝各天線用線經由中央 22b供電。進而，各天線用線的外端部，爲了 線的電壓分佈，故介設電容器1 8 b而連接並接 3的上壁。但亦可不介設電容器1 8b，直接的 也可在端子22b的一部分或天線用線的中途， l〇〇b插入電容器。然後，在內側天線部13b 天線用線與外側天線部1 3 a之最內側的天線用 較大的空間。 在天線室3的中央部附近設有：供電到 13a的四根第1供電構件16a以及供電到內價 、 的四根第2供電構件1 6b (在第1圖中均只圖 各弟1供電構件16a的下端連接在外側天線部 22a ’ 各第2供電構件1 6b的下端連接在內隹 的端子22b。在該等第1及第2供電構件162 介設整合器1 4而連接有局頻電源1 5。高頻調 合器14是連接到供電線1 9， 供電線1 9是 間。並且成 。而且，各 分佈，故介 。但亦可不 子22a的一 I電容器。 中央部的空 式來配置四 的四個端子 改變天線用 地到天線室 接地，進而 例如彎曲部 之最外側的 線之間形成 外側天線部 !1天線部1 3 b 1兩一根）， ;1 3 a的端子 [I]天線部1 3 b i及16b ，是 墜源15及整 在整合器14 -12- 200818996 (10) 的下流側分歧成供電線19a與19b，供電線19a 四根第1供電構件16a， 供電線19b被連接到 供電構件16b。在供電線19a介裝有可變電容器 ，藉由可變電容器21與外側天線部13a構成外 ' 路。一方面，內側天線電路只以內側天線部1 3b * 然後，調節可變電容器21之電容，藉此如後所 外側天線電路的阻抗，就能調整流到外側天線電 φ 天線電路之電流的大小關係。 電漿處理中，從高頻電源1 5朝高頻天線1 3 電場形成用的例如頻率爲13.56MHz的高頻電力 藉由供給高頻電力的高頻天線1 3，在處理室4 感應電場，藉由該感應電場，讓由淋浴頭框體1 的處理氣體電漿化。此時的電漿密度分佈是藉由 電容器21所致之外側天線部1 3 a與內側天線部 抗所控制。 • 在處理室4內之下方，以隔著介電質壁2並 線13對向的方式，設有用以載置LCD玻璃基板 台23。載置台23是以例如表面被陽極氧化處理 成。被載置在載置台23的LCD玻璃基板G，是 夾盤（圖未表示）被吸附保持。 載置台2 3是被收納在絕緣體框2 4內，進一 在中空的支柱2 5是邊維持氣密狀態邊貫通本體 底部，且被支撐於配置在本體容器1外的昇降機 表示），且在基板G之搬入/搬出時，藉由昇降 被連接到 四根第2 21。因而 側天線電 所構成。 述，控制 路與內側 供給感應 ，像這樣 內形成有 1所供給 控制可變 1 3 b之阻 與高頻天 G的載置 的鋁所構 藉由靜電 步被支撐 容器1的 構（圖未 機構朝上 -13- 200818996 (11) 下方向驅動載置台23。再者，在收納載置台23的絕緣體 框24與本體容器1的底部之間，配設有氣密包圍支柱25 的波紋管2 6，藉此即使載置台2 3上下動，亦可保證處理 容器4內的氣密性。而在處理室4的側壁4 a，設有用以 ~ 搬入/搬出基板G的搬入/搬出口 27a以及開關該出入口的 ' 閘閥27。 在載置台23，是藉由設置在中空支柱25內的供電線 φ 25a，且介設整合器28而連接有高頻電源29。該高頻電 源29是在電漿處理中，對載置台23施加偏壓用的高頻電 力，例如頻率爲6MHz的高頻電力。藉由該偏壓用的高頻 電力，產生在處理室4內的電漿中之離子，會有效被引入 到基板G。 進而，在載置台23內，爲了控制基板G的溫度，設 有以陶瓷加熱器等的加熱手段和冷媒流路等所形成的溫度 控制機構、和溫度感測器（均未圖示）。對該等機構或構 φ 件的配管和配線，均通過中空支柱25被導出到本體容器 1外。 在處理室4的底部，是介設排氣管31而連接有包含 真空泵等的排氣裝置30，處理室4是藉由該排氣裝置30 被排氣，電漿處理中，處理室4內設定維持在特定的真空 環境中（例如1.33Pa)。200818996 四个) Four antenna wires are arranged in a state in which the center portion is empty, and the outer end portions of the antenna wires are supplied to the respective antenna wires via the central four terminals 22a, and a capacitor is provided for changing the voltage of the antenna wires. 1 8a is connected and grounded to the side wall of the antenna room 3 to interpose the capacitor 18a, directly grounded, and further in the middle of the end portion or the antenna wire, for example, the bent portion 100a is inserted J, and the inner antenna portion 13b is outside. A square antenna line is disposed between the antenna portions at a position shifted by 90° and is generally rectangular in shape. Further, power is supplied to the antenna lines via the center 22b. Further, in order to distribute the voltage of the line, the outer end portion of each of the antenna wires is connected to the upper wall of the capacitor 3 by interposing the capacitor 1 8 b. However, the capacitor 18b may not be provided, and the capacitor may be directly inserted in the middle of the terminal 22b or the antenna line. Then, a larger space is used for the antenna on the inner side of the inner antenna portion 13b and the outer antenna portion 13a. In the vicinity of the center portion of the antenna room 3, four first power feeding members 16a for supplying power to 13a and four second power feeding members 16b for supplying power to the internal price are provided (in the first drawing, only the first power supply 1) is provided. The lower end of the member 16a is connected to the outer antenna portion 22a'. The lower end of each of the second power feeding members 16b is connected to the terminal 22b of the inner side. The first and second power feeding members 162 are connected to the inner unit 14 and connected to the local frequency. Power supply 15. The high frequency combiner 14 is connected to the power supply line 19, and the power supply line 19 is between and connected. Moreover, each of the distributions may be replaced by an I-capacitor of the sub-22a. To configure the four terminals of the four to change the antenna ground to the antenna room ground, and for example, to form the outer antenna portion between the outermost lines of the curved portion! 1 antenna portion 1 3 b 1 two), ; 1 3 a terminal [ I] antenna portions 1 3 bi and 16b are the source 15 and the downstream side of the integrator 14 -12-200818996 (10) are divided into power supply lines 19a and 19b, and the power supply line 19a is provided with four first power supply members 16a. The electric wire 19b is connected to the power supply member 16b. A variable capacitor is interposed in the power supply line 19a, and the outer capacitor is formed by the variable capacitor 21 and the outer antenna portion 13a. On the one hand, the inner antenna circuit only uses the inner antenna portion 13b* and then adjusts the capacitance of the variable capacitor 21, whereby the current flowing to the outer antenna electric φ antenna circuit can be adjusted as the impedance of the outer antenna circuit. relationship. In the plasma processing, a high-frequency power source having a frequency of 13.56 MHz for forming an electric field from the high-frequency power source 15 to the high-frequency antenna 13 is induced by an electric field in the processing chamber 4 by a high-frequency antenna 13 that supplies high-frequency power. The process gas from the shower head housing 1 is plasmad by the induced electric field. The plasma density distribution at this time is controlled by the outer side antenna portion 13a and the inner antenna portion due to the capacitor 21. • The LCD glass substrate stage 23 is placed under the processing chamber 4 so as to face the line 13 via the dielectric wall 2 interposed therebetween. The stage 23 is, for example, anodized to the surface. The LCD glass substrate G placed on the mounting table 23 is held by a chuck (not shown). The mounting table 23 is housed in the insulator frame 24, and is further shown in the case where the hollow pillars 25 are kept in an airtight state while passing through the bottom of the body and supported by the elevator disposed outside the main body container 1). When G is moved in/out, it is connected to the four 2nd 21 by lifting. Therefore, the side antenna is constructed. As described above, the control path and the inner supply induction are formed such that the resistance of the supply control variable 1 3 b and the arrangement of the high frequency sky G are formed by the electrostatically supported container 1 (Fig. Mechanism upwards-13-200818996 (11) The mounting table 23 is driven in the downward direction. Further, a bellows 2 that hermetically surrounds the stay 25 is disposed between the insulator frame 24 that houses the mounting table 23 and the bottom of the main body container 1. 6. Even if the mounting table 23 moves up and down, the airtightness in the processing container 4 can be ensured. In the side wall 4a of the processing chamber 4, the loading/unloading port 27a for loading/unloading the substrate G and the loading/unloading port 27a are provided. The gate valve 27 for opening and closing the inlet and outlet. The mounting table 23 is connected to the high-frequency power source 29 via a power supply line φ 25a provided in the hollow pillar 25 and interposed with the integrator 28. The high-frequency power source 29 is electrically In the slurry treatment, high-frequency electric power for biasing is applied to the mounting table 23, for example, high-frequency electric power having a frequency of 6 MHz. The high-frequency electric power for the bias generates ions in the plasma in the processing chamber 4, It is effectively introduced to the substrate G. Further, in the mounting table 23, for the control base The temperature of the plate G is provided with a temperature control mechanism formed by a heating means such as a ceramic heater, a refrigerant flow path, and the like, and a temperature sensor (none of which is shown). The piping and the piping of the mechanism or the φ component are The wiring is led out to the outside of the main body container 1 through the hollow pillar 25. At the bottom of the processing chamber 4, an exhaust pipe 31 is connected to the exhaust pipe 31, and an exhaust device 30 including a vacuum pump or the like is connected, and the processing chamber 4 is connected by the exhaust gas. The apparatus 30 is vented, and during the plasma processing, the processing chamber 4 is maintained in a specific vacuum environment (e.g., 1.33 Pa).
在被載置於載置台23之基板G的背面側，形成有冷 卻空間（圖未表示），且設有用來供給以He氣體作爲一 定壓力之熱傳用氣體的He氣體流路4 1。像這樣對基板G -14- 200818996 (12) 的背面側供給熱傳達用氣體，藉此就能在真空下避 G的溫度上昇和溫度變化。 在He氣體流路41連接有He氣體管線42，% 氣體管線42連接有圖未表示的He源。在該He氣 42設有壓力控制閥44，在其下流側設有連繫到He 貯槽47的配管43。在He氣體管線42之配管43 部之下流側設有開關閥45，更在其下流側連接有 線48，在該打開管線48設有釋放閥49。在貯槽 以與設定壓力塡滿基板G之背面側的冷卻空間時 壓力之方式，對貯槽47的容量塡充最佳壓力的He 熱傳達用的He氣體就能快速的從該貯槽47供給到 間。再者，熱傳達用氣體並不限於He氣體，其他 可° 該電漿處理裝置的各構成部，是受到連接於由 形成的控制部5 0所控制的構成。而在控制部5 0連 工程管理者爲了管理電漿處理裝置，執行指示之輸 等的鍵盤、和以可視化來顯示電漿處理裝置之作業 顯示器等所形成的使用者介面51。更在控制部50 :爲了利用控制部5 0的控制來實現以電漿處理裝 行的各種處理的控制程度、和爲了配合處理條件在 理裝置的各構成部實行處理的程度亦即儲存配方的 52。配方可記憶在硬碟和半導體記憶體，也可以 CDROM、DVD等之可搬性的記憶媒體之狀態下， 記憶部5 2的特定位置。進而’也可爲由其他裝置 免基板 E該He 體管線 氣體之 的連接 打開管 47，是 同等的 氣體， 冷卻空 氣體亦 電腦所 接有： 入操作 狀況的 連接有 置所實 電漿處 記憶部 收容在 設定在 ，例如 -15- 200818996 (13) 經由專用線路而適當傳送配合。然後，配合需要，利用來 自使用者介面5 1的指示等，從記憶部52叫出任意的配方 而於控制部5 0實行，在控制部5 〇的控制下，在電漿處理 裝置進行所希望的處理。 其次’針對高頻天線1 3的阻抗控制做說明。第3圖 是表示高頻天線13之供電電路的圖。如該圖所示，來自 高頻電源1 5的高頻電力是經由整合器1 4供給到外側天線 φ 電路6 1 a與內側天線電路6 1 b。在此，因外側天線電路 6 1 a是以外側天線部1 3 a與可變電容器2 1所構成，故外 側天線電路61a的阻抗Ζ。"是藉由調節可變電容器21的 位置來改變其電容，就能令其改變。一方面，內側天線電 路61b只由內側天線部13b所形成，其阻抗Ζιη爲固定。 此時，外側天線電路61a的電流Uu t是對應於阻抗 的變化而改變。然後，內側天線電路61b的電流Iin是對 應於Z。^與Zin的比率而改變。於第4圖所示此時之IQut ^ 及的變化。如該圖所示，藉由可變電容器2 1的電容調 節而使Z。^改變，藉此就能自如的改變外側天線電路6 1 a . 的電流I〇ut與內側天線電路61b的電流Ιιη。因此，能控 . 制流到外側天線部1 3 a的電流與流到內側天線部1 3 b的電 流，藉此就能控制電漿密度分佈。 其次，針對使用如下所構成的感應耦合電漿飩刻裝置 ’對LCD玻璃基板G施行電漿蝕刻裝置時的處理動作做 說明。 首先，以打開閘閥27的狀態，藉由該等搬送機構（ -16- 200818996 (14) 圖未表示）將基板G搬入到處理室4內，載置在載置台 23的載置面之後，藉由靜電夾盤（圖未表示）將基板G 固定在載置台23上。其次，在處理室4內來自處理氣 體供給系統2 0的處理氣體，從淋浴頭框體1 1的氣體吐出 孔12a吐出到處理室4內，並且藉由排氣裝置30，經由 ' 排氣管3 1在處理室4內進行真空排氣，藉此將處理室內 例如維持在0.66〜26.6Pa左右的壓力環境。 φ 並且此時在基板G之背面側的冷卻空間，爲了避免 基板G的溫度上昇和溫度變化，經由He氣體管線42、 He氣體流路41，供給He氣體作爲熱傳達用氣體。此時 ，以往雖是從氣體鋼瓶直接對He氣體管線42供給He氣 體，利用壓力控制閥來控制壓力，但隨著基板大型化’氣 體管線的距離因裝置大型化變長，以氣體所塡滿的空間容 量增大，雖然由氣體供給完成調壓前的時間變長’但在此 ，是在壓力控制閥44的下流側設置He氣體的貯槽47， • 因於此事先塡充He氣體，故能以極短時間進行調壓。亦 即，在對基板G的背面供給熱傳達用氣體的He氣體之際 ，先從貯槽47供給He氣體，從來自習知氣體鋼瓶的管線 塡補不足份，藉此即可於瞬間得到接近設定壓力的壓力， 並因介設壓力控制閥所塡補的氣體量亦爲微量，故可於極 短時間內完成調壓。此時，塡充於貯槽47的氣體壓力， 是以與設定壓力塡滿冷卻空間時同等之方式，對貯槽47 的容量形成最佳的壓力爲佳。再者，使氣體塡充於貯槽 47的動作，是在不影響基板G之搬送時等、基板處理時 -17- 200818996 (15) 間之時進行爲佳。 其次，由高頻電源15將例如13.56MHz的高頻施加 於高頻天線1 3，藉此經由介電質壁2於處理室4內形成 均勻的感應電場。藉由如此所形成的感應電場，在處理室 ~ 4內讓處理氣體電漿化，產生高密度的感應耦合電漿。 ' 此時，高頻天線1 3，係如上所述，具有：在外側部 分緊密配置天線用線的外側天線部1 3 a、和在內側部分緊 φ 密配置天線用線的內側天線部1 3b的構造，在外側天線部 1 3 a連接可變電容器2 1，並因可進行外側天線電路6 1 a的 阻抗調節，故如第4圖模式所示，可自如地改變外側天線 電路61a的電流Uut與內側天線電路61b的電流Iin。因 此，調節可變電容器2 1的位置，藉此就能控制流到外側 天線部13a的電流與流電內側天線部13b的電流。感應耦 合電漿雖是在高頻天線13正下方的空間產生電漿，但由 於在此時之各位置的電漿密度，與在各位置的電場強度成 φ 正比，因此像這樣來控制流到外側天線部1 3 a的電流與流 到內側天線部1 3b的電流，藉此就能控制電漿密度分佈。 此時，對每個應用掌握最佳的電漿密度分佈，將可事 先得到該電漿密度分佈的可變電容器21的位置設定在記 憶部52，藉此就能利用控制部50選擇最適合每個應用的 可變·電容器21的位置來進行電漿處理。 如此一來因能藉由可變電容器21所致之阻抗控制來 控制電漿密度分佈，故不需要更換天線，且不需要天線更 換的勞力和對每個應用準備天線的成本。並且能藉由可變 -18- 200818996 (16) 電容器2 1的位置調節來進行極細的電流控制，就能控制 成配合應用得到最佳的電槳密度分佈。進而，不使用複數 個高頻電源，或分配高頻電力的功率，因只是藉由可變電 容器2 1來進行阻抗調整而進行外側天線部1 3 a與內側天 線部的電流控制，故並不存在裝置過大、高成本，或者電 力成本高等的缺點，控制精度亦比使用複數個高頻電源或 分配功率的情形還高。 其次，使用第1圖所示的裝置，測定實際改變可變電 容器21的位置之際的外側天線部13 a與內側天線部13 b 之電流値的變化。第5圖是表示此時可變電容器2 1的位 置與外側天線部1 3 a以及內側天線部1 3 b之電流値關係的 圖。在此，可變電容器21的位置0〜100%，相當於100 〜5 OOpF的電容變化。如第5圖所示，確認改變可變電容 器2 1的位置，藉此就能改變外側天線部1 3 a與內側天線 部13b的電流値。具體上，可變電容器21的位置達50% ，外側天線部1 3 a電流値比內側天線部1 3 b還大，在5 0 %大致相同，一旦超過50%相反地內側天線部13b電流 値比外側天線部1 3 a還大。 像這樣在藉由可變電容器21進行阻抗調節的各條件 中，掌握使用〇2氣體（灰化條件）產生電漿之際的電漿 發光狀態。其結果，在外側天線部1 3 a的電流値爲較大的 可變電容器21的位置爲30%時，外側發光強度較強，在 外側天線部13a與內側天線部13b的電流値爲同等的50 %時，外側與內側發光強度大致同等，在內側天線部1 3b -19- 200818996 (17) 的電流値爲較大的100%時，內側發光強度較強。亦即， 確認藉由可變電容器21所致之阻抗調節’就能控制外側 天線部1 3 a與內側天線部1 3的電流値’其電流値狀態與 電漿狀態一致。亦即，確認藉由可變電容器所致的阻抗控 _ 制，就能控制電漿狀態。 其次，可變電容器的位置爲2 0 %、5 0 %、1 0 0 %，於 第6圖表示測定有關各位置使用〇 2氣體（灰化條件）產 φ 生氣體之際的電子密度分佈之結果。如該圖所示’確認藉 由可變電容器2 1所致的阻抗控制，也能控制電子密度分 佈（電漿密度分佈）。 其次，針對使用組裝可變電容器2 1之第1圖所示的 裝置，改變可變電容器21的位置，對玻璃基板進行灰化 處理的結果做說明。在此，讓可變電容器2 1的位置在20 〜1 0 0 %的範圍做1 0段變化’針對玻璃基板的中心一處、 邊緣三處、中間位置一處之合計五處來測定灰化速率。再 φ. 者，灰化條件爲〇2氣體流量：750mL/min(sccm)、壓 力：2.67Pa(2 0mToi:r)、高頻功率·· 6kW。於第7圖表 示其結果。並於第8圖表示測定此時灰化率的部分。再者 ，邊緣的灰化率是表示三處的最大値與最小値。如第7圖 所示’根據本發明進行可變電容器所致之阻抗調節’並進 行外側部分與內側部分之電漿密度分佈的控制，藉此就能 進行灰化率之均勻性高的灰化處理。在此例的情形下’可 變電容器 21的位置爲3 6 %時，灰化率的平均値爲 2 6 0.7nm，誤差爲±6.2%，即可得到良好的均勻性。 -20- 200818996 (18) 同樣的，確認在使用氟系氣體之鎢等的高熔點金屬膜 的餓刻中，當可變電容器21的位置爲40%時，可得到良 好的均勻性。因此，在同一處理真空室，進行鎢等之高熔 點金屬膜的蝕刻處理之後，接連實施進行光阻之灰化處理 ' 等不同之應用的情況下，除了對應於各應用之氣體和壓力 等之習知處理條件的變更以外，選擇事先求得的每個應用 之最佳的可變電容器21的位置之後，進行各應用的處理 φ ，藉此連同一處理真空室的處理，都能得到具有良好均勻 性的製造特性。 再者，上述實施形態中，雖在100〜5 00pF的範圍使 用可變電容器，但接地於天線用線外端的電容器1 8a、 1 8b之値，或在天線用線中途插入電容器的情況下，藉由 選擇適合該電容器之値，就能變更對電漿密度分佈控制有 效的可變電容器之可變範圍，例如只要在 10〜2000pF之 範圍的一部分或全部的區域爲可變的電容器，就能充分的 ⑩ 應用。 再者，本發明並不限於上述實施形態，可爲各種變形 。例如，在上述實施形態中，雖爲表示將可變電容器連接 在外側天線部的範例，但並不限於此，如第9圖所示’也 可在內側天線部1 3b側設置可變電容器2 1 ’。此時，調節 可變電容器2 1’的位®就能改變其電容，藉此還可改變內 側天線電路61 b的阻抗Ζιη，藉此，可如第1 〇圖改變外側 天線電路61a的電流1。^與內側天線電路61b的電流Iin -21 - 200818996 (19) 並且高頻天線的構造並不限於上述構造，可採用具有 同樣功能的其他各種圖案者。並且在上述實施形態中，雖 是將高頻天線分爲：在外側形成電漿的外側天線部與在內 側形成電漿的內側天線部，但未必要分成外側與內側，可 ' 採用各種分法。進而，不限於分在形成電漿之位置不同的 _ 天線部之情形，也可爲分在電漿分佈特性不同的天線部。 另又在上述實施形態中，雖是針對將高頻天線分爲外側與 φ 內側之兩個的情形來表示，但也可分爲三個以上。例如， 可列舉分爲：外側部分、中央部分與該些的中間部分之三 個。 進而，雖爲了調整阻抗設置可變電容器，但也可爲可 變線圈等其他的阻抗調整手段。 另又，雖針對將本發明應用於灰化裝置的表形來表示 ，但並不限於灰化裝置，可應用在飩刻、CVD成膜等其 他的電漿處理裝置。另又，雖使用FPD基板作爲被處理 φ 基板，但本發明並不限於此，也可應用於處理半導體晶圓 等其他基板的情形。 【圖式簡單說明】 弟1圖是表不有關本發明之一*實施形態的感應親合電 漿處理裝置的剖面圖。 第2圖是表示應用於第1圖之感應耦合電漿處理裝置 之高頻天線的俯視圖。 第3圖是表示應用於第1圖之感應耦合電漿處理裝置 -22- 200818996 (20) 之高頻天線的供給電路之® ° 第4圖是表示隨著第3圖之供電電路的阻抗變化之外 側天線電路的電流以及內側天線電路的電流1^之變 化的圖。 第5圖是表示隨著第3圖之供電電路的阻抗變化之外 側天線電路的電流hut以及內側天線電路的電流Iin之變 化的圖。 φ 第6圖是表示使用第1圖所示的裝置，測定實際上改 變可變電容器之位置來產生電漿時的電子密度分佈之結果 的圖。 第7圖是表示使用第1的裝置，改變可變電容器之位 置時的玻璃基板之灰化率的結果之圖。 第8圖是表示隨著第7圖之供電電路的阻抗變化之外 側天線電路的電流I〇Ut以及內側天線電路的電流Iin之變 化的圖。 • 第9圖是表示高頻天線的供電電路的其他例的圖。 第10圖是表示隨著第9圖之供電電路的阻抗變化之 外側天線電路的電流I〇ut以及內側天線電路的電流Iin之 變化的圖。 【主要元件符號之說明】 1 :本體容器 2:介電質壁（介電質構件） 3 :天線室 -23- 200818996 (21) 4 _·處理室 1 3 :高頻天線 1 3 a :外側天線部 13b :內側天線部 _ 14 :整合器 1 5 :高頻電源 1 6 a、1 6 b :供電構件 φ 20 :處理氣體供給系統 21 :可變電容器 2 3 ·載置台 3 0 :排氣裝置 t 5 0 :控制部 5 1 :使用者介面 52 :記憶部 6 1 a :外側天線電路 _ 6 1 b :內側天線電路 G :基板 -24-A cooling space (not shown) is formed on the back side of the substrate G placed on the mounting table 23, and a He gas flow path 41 for supplying a heat transfer gas having a He gas as a predetermined pressure is provided. By supplying the heat transfer gas to the back side of the substrate G-14-200818996 (12), the temperature rise and the temperature change of the G can be avoided under vacuum. A He gas line 42 is connected to the He gas flow path 41, and a He source, not shown, is connected to the % gas line 42. The He gas 42 is provided with a pressure control valve 44, and a piping 43 connected to the He tank 47 is provided on the downstream side. An on-off valve 45 is provided on the flow side of the piping 43 of the He gas line 42, and a line 48 is connected to the downstream side thereof, and a release valve 49 is provided in the open line 48. The He gas for He heat transmission which is optimally charged to the capacity of the storage tank 47 so as to fill the space of the cooling space on the back side of the substrate G at a set pressure can be quickly supplied from the storage tank 47 to the space. . Further, the heat transfer gas is not limited to He gas, and the other components of the plasma processing apparatus are connected to the control unit 50 formed by the control unit 50. On the other hand, the control unit 50 connects the keyboard to which the engineer manages the plasma processing apparatus to perform the instruction, and the user interface 51 formed by visually displaying the work display of the plasma processing apparatus. Further, in the control unit 50, in order to realize the degree of control of various processes by the plasma processing and the control by the control unit 50, and to the extent that the processing is performed on each component of the device in accordance with the processing conditions, that is, the recipe is stored. 52. The recipe can be stored in a hard disk and a semiconductor memory, or in a state of a portable memory medium such as a CDROM or a DVD, and a specific position of the memory unit 52. Furthermore, it is also possible to open the tube 47 from the connection of the He-body line gas by the other device. The cooling air body is also connected to the computer: The connection to the operating state is stored in the real plasma. The part is housed and set, for example, -15-200818996 (13), and the transmission is appropriately transmitted via a dedicated line. Then, with the instruction from the user interface 51, an arbitrary recipe is called from the memory unit 52 and executed by the control unit 50, and the plasma processing apparatus performs the control under the control of the control unit 5? Processing. Next, the impedance control of the high frequency antenna 13 will be described. Fig. 3 is a view showing a power supply circuit of the radio-frequency antenna 13. As shown in the figure, the high frequency power from the high frequency power source 15 is supplied to the outer antenna φ circuit 6 1 a and the inner antenna circuit 6 1 b via the integrator 14. Here, since the outer antenna circuit 61a is constituted by the outer antenna portion 13a and the variable capacitor 21, the impedance of the outer antenna circuit 61a is Ζ. " is to change the capacitance of the variable capacitor 21 by changing its position. On the other hand, the inner antenna circuit 61b is formed only by the inner antenna portion 13b, and its impedance Ζι is fixed. At this time, the current Uu t of the outer antenna circuit 61a changes in accordance with the change in impedance. Then, the current Iin of the inner antenna circuit 61b corresponds to Z. ^ Change with the ratio of Zin. The change in IQut ^ and at this time as shown in Fig. 4. As shown in the figure, Z is adjusted by the capacitance adjustment of the variable capacitor 2 1 . ^Change, whereby the current I〇ut of the outer antenna circuit 6 1 a. and the current Ιι of the inner antenna circuit 61b can be freely changed. Therefore, it is possible to control the current flowing to the outer antenna portion 13a and the current flowing to the inner antenna portion 13b, whereby the plasma density distribution can be controlled. Next, a description will be given of a processing operation when the plasma etching apparatus is applied to the LCD glass substrate G by using the inductively coupled plasma etching apparatus configured as follows. First, in a state where the gate valve 27 is opened, the substrate G is carried into the processing chamber 4 by the transfer mechanism (not shown), and placed on the mounting surface of the mounting table 23, The substrate G is fixed to the mounting table 23 by an electrostatic chuck (not shown). Next, the processing gas from the processing gas supply system 20 in the processing chamber 4 is discharged from the gas discharge hole 12a of the shower head housing 1 into the processing chamber 4, and through the exhaust unit 30, via the 'exhaust pipe The vacuum evacuation is performed in the processing chamber 4, whereby the processing chamber is maintained at a pressure of, for example, about 0.66 to 26.6 Pa. φ At this time, in order to avoid temperature rise and temperature change of the substrate G in the cooling space on the back side of the substrate G, He gas is supplied as a heat transfer gas via the He gas line 42 and the He gas flow path 41. In this case, the He gas is directly supplied to the He gas line 42 from the gas cylinder, and the pressure is controlled by the pressure control valve. However, as the substrate is enlarged, the distance of the gas line is increased by the size of the device, and the gas is filled. The space capacity is increased, although the time until the pressure regulation is completed by the gas supply becomes longer, but here, the tank 47 for the He gas is provided on the downstream side of the pressure control valve 44, and the He gas is previously charged. It can be adjusted in a very short time. In other words, when He gas is supplied to the back surface of the substrate G, the He gas is supplied from the storage tank 47, and the line from the conventional gas cylinder is insufficiently compensated, whereby the set pressure can be instantaneously obtained. The pressure and the amount of gas compensated by the pressure control valve are also small, so the pressure regulation can be completed in a very short time. At this time, it is preferable that the gas pressure to be filled in the storage tank 47 is such that the pressure of the storage tank 47 is optimally formed in the same manner as when the set pressure is full. Further, it is preferable that the operation of filling the gas in the storage tank 47 is performed at a time when the substrate processing is not affected, and the substrate processing is performed between -17 and 200818996 (15). Next, a high frequency power source 15, for example, a high frequency of 13.56 MHz is applied to the high frequency antenna 13 to form a uniform induced electric field in the processing chamber 4 via the dielectric wall 2. By the induced electric field thus formed, the process gas is plasmated in the process chamber 4 to produce a high-density inductively coupled plasma. At this time, the high-frequency antenna 13 has an outer antenna portion 13a that closely arranges the antenna wire in the outer portion, and an inner antenna portion 13b that closely aligns the antenna wire in the inner portion. The structure is such that the variable capacitor 2 1 is connected to the outer antenna portion 1 3 a and the impedance adjustment of the outer antenna circuit 6 1 a can be performed. Therefore, as shown in the fourth diagram mode, the current of the outer antenna circuit 61a can be freely changed. Uut and current Iin of the inner antenna circuit 61b. Therefore, the position of the variable capacitor 21 is adjusted, whereby the current flowing to the outer antenna portion 13a and the current flowing from the inner antenna portion 13b can be controlled. Although the inductively coupled plasma generates plasma in the space directly under the high frequency antenna 13, the plasma density at each position at this time is proportional to the electric field intensity at each position, so that the flow is controlled as described above. The current of the outer antenna portion 13 3 a and the current flowing to the inner antenna portion 13 b can thereby control the plasma density distribution. At this time, the optimum plasma density distribution is grasped for each application, and the position of the variable capacitor 21 which can obtain the plasma density distribution in advance is set in the memory unit 52, whereby the control unit 50 can select the most suitable one. The position of the variable capacitor 21 applied is subjected to plasma processing. In this way, since the plasma density distribution can be controlled by the impedance control by the variable capacitor 21, there is no need to replace the antenna, and the labor for replacing the antenna and the cost of preparing the antenna for each application are not required. Moreover, the extremely fine current control can be controlled by the positional adjustment of the variable -18-200818996 (16) capacitor 2 1 to control the optimal pitch distribution of the pitch for the application. Further, without using a plurality of high-frequency power sources or distributing the power of the high-frequency power, since the impedance adjustment is performed by the variable capacitor 21, the current control of the outer antenna portion 13a and the inner antenna portion is performed, and thus There are disadvantages such as excessively large devices, high costs, or high power costs, and the control accuracy is also higher than in the case of using a plurality of high-frequency power sources or distributing power. Next, using the apparatus shown in Fig. 1, the change in the current 値 of the outer antenna portion 13a and the inner antenna portion 13b when the position of the variable capacitor 21 is actually changed is measured. Fig. 5 is a view showing the relationship between the position of the variable capacitor 2 1 and the current 値 of the outer antenna portion 13 a and the inner antenna portion 13 b at this time. Here, the position of the variable capacitor 21 is 0 to 100%, which corresponds to a change in capacitance of 100 to 50,000 pF. As shown in Fig. 5, it is confirmed that the position of the variable capacitor 21 is changed, whereby the current 値 of the outer antenna portion 13a and the inner antenna portion 13b can be changed. Specifically, the position of the variable capacitor 21 is 50%, and the current antenna portion 1 3 a current 値 is larger than the inner antenna portion 1 3 b, and is substantially the same at 50%. Once the 50% is exceeded, the inner antenna portion 13b is current 値. It is larger than the outer antenna portion 1 3 a. In each of the conditions for performing impedance adjustment by the variable capacitor 21, the state of plasma light emission when plasma is generated using 〇2 gas (ashing condition) is grasped. As a result, when the position of the variable capacitor 21 having a large current 値 of the outer antenna portion 13a is 30%, the outer light-emission intensity is strong, and the current 値 between the outer antenna portion 13a and the inner antenna portion 13b is equivalent. At 50%, the outer side and the inner side illuminating intensity are substantially equal, and when the current 値 of the inner antenna portion 1 3b -19-200818996 (17) is 100% larger, the inner side illuminating intensity is stronger. That is, it is confirmed that the current 値' of the outer antenna portion 13a and the inner antenna portion 13 is controlled by the impedance adjustment by the variable capacitor 21, and the current 値 state coincides with the plasma state. That is, it is confirmed that the plasma state can be controlled by the impedance control by the variable capacitor. Next, the position of the variable capacitor is 20%, 50%, and 100%. In Fig. 6, the electron density distribution at the time of producing φ gas by using 〇2 gas (ashing condition) at each position is measured. result. As shown in the figure, the electron density distribution (plasma density distribution) can also be controlled by confirming the impedance control by the variable capacitor 21. Next, the result of ashing the glass substrate by changing the position of the variable capacitor 21 using the apparatus shown in Fig. 1 of the assembled variable capacitor 21 will be described. Here, the position of the variable capacitor 2 1 is changed in the range of 20 to 100%, and the change is made in the vicinity of the center of the glass substrate, the three edges, and the middle position. rate. Further, the ashing conditions are 〇2 gas flow rate: 750 mL/min (sccm), pressure: 2.67 Pa (20 mToi: r), and high-frequency power··6 kW. The results are shown in the seventh chart. In Fig. 8, the portion where the ashing rate is measured at this time is shown. Furthermore, the ashing rate of the edge is the maximum 値 and the minimum 表示 in three places. As shown in Fig. 7, the impedance adjustment by the variable capacitor is performed according to the present invention, and the plasma density distribution of the outer portion and the inner portion is controlled, whereby the ashing with high uniformity of ashing rate can be performed. deal with. In the case of this example, when the position of the variable capacitor 21 is 36%, the average 値 of the ashing rate is 2 6 0.7 nm, and the error is ± 6.2%, and good uniformity can be obtained. -20-200818996 (18) In the same manner, when the high-melting-point metal film such as tungsten of a fluorine-based gas is used, it is confirmed that when the position of the variable capacitor 21 is 40%, good uniformity can be obtained. Therefore, in the case where the etching process of the high-melting-point metal film such as tungsten is performed in the same processing vacuum chamber, and the application of the ashing process for the photoresist is performed in succession, the gas and the pressure corresponding to the respective applications are used. In addition to the change of the conventional processing conditions, the position of the optimum variable capacitor 21 for each application obtained in advance is selected, and then the processing φ of each application is performed, whereby the processing of the same processing vacuum chamber can be performed well. Uniform manufacturing characteristics. Further, in the above-described embodiment, the variable capacitor is used in the range of 100 to 500 pF, but the capacitor is grounded at the outer end of the antenna wire 18 8 or 18 b or the capacitor is inserted in the middle of the antenna wire. By selecting a 适合 suitable for the capacitor, the variable range of the variable capacitor effective for controlling the plasma density distribution can be changed. For example, if a part or all of the range of 10 to 2000 pF is a variable capacitor, Full of 10 applications. Furthermore, the present invention is not limited to the above embodiment, and various modifications are possible. For example, in the above-described embodiment, the variable capacitor is connected to the outer antenna portion. However, the present invention is not limited thereto. As shown in FIG. 9, the variable capacitor 2 may be provided on the inner antenna portion 13b side. 1 '. At this time, adjusting the capacitance of the variable capacitor 2 1 ' can change its capacitance, whereby the impedance of the inner antenna circuit 61 b can also be changed, whereby the current of the outer antenna circuit 61a can be changed as in the first diagram. . ^ The current Iin-21 to 200818996 (19) with the inner antenna circuit 61b and the configuration of the high frequency antenna are not limited to the above configuration, and other various patterns having the same function can be employed. Further, in the above-described embodiment, the high-frequency antenna is divided into an outer antenna portion in which plasma is formed on the outer side and an inner antenna portion in which plasma is formed on the inner side. However, it is not necessary to divide the outer antenna portion into the inner side portion. . Further, the present invention is not limited to the case where the antenna portion is different in position at which the plasma is formed, and may be divided into antenna portions having different plasma distribution characteristics. Further, in the above embodiment, the case where the high frequency antenna is divided into the outer side and the inner side of φ is shown, but it may be divided into three or more. For example, it can be exemplified as three parts: an outer portion, a central portion, and a middle portion of the portions. Further, although the variable capacitor is provided to adjust the impedance, it may be another impedance adjusting means such as a variable coil. Further, although the present invention is applied to the characterization of the ashing apparatus, it is not limited to the ashing apparatus, and can be applied to other plasma processing apparatuses such as etch film formation and CVD film formation. Further, although the FPD substrate is used as the processed φ substrate, the present invention is not limited thereto, and can be applied to the case of processing other substrates such as semiconductor wafers. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a cross-sectional view showing an induction affinity plasma processing apparatus according to an embodiment of the present invention. Fig. 2 is a plan view showing a high-frequency antenna applied to the inductively coupled plasma processing apparatus of Fig. 1. Fig. 3 is a view showing a supply circuit of a high frequency antenna applied to the inductively coupled plasma processing apparatus of the first drawing -22-200818996 (20). Fig. 4 is a diagram showing changes in impedance of the power supply circuit according to Fig. 3. A plot of the current of the outer antenna circuit and the change of the current of the inner antenna circuit. Fig. 5 is a view showing changes in the current hut of the external antenna circuit and the current Iin of the inner antenna circuit as the impedance of the power supply circuit of Fig. 3 changes. Fig. 6 is a view showing the result of measuring the electron density distribution when the plasma is actually changed by changing the position of the variable capacitor using the apparatus shown in Fig. 1. Fig. 7 is a view showing the result of the ashing rate of the glass substrate when the position of the variable capacitor is changed by using the first device. Fig. 8 is a view showing changes in the current I 〇 Ut of the external antenna circuit and the current Iin of the inner antenna circuit as the impedance of the power supply circuit of Fig. 7 is changed. • Fig. 9 is a view showing another example of the power supply circuit of the radio-frequency antenna. Fig. 10 is a view showing changes in the current I〇ut of the outer antenna circuit and the current Iin of the inner antenna circuit as the impedance of the power supply circuit of Fig. 9 changes. [Description of main component symbols] 1 : Main body container 2: Dielectric wall (dielectric member) 3 : Antenna room -23- 200818996 (21) 4 _·Processing chamber 1 3 : HF antenna 1 3 a : Outside Antenna portion 13b: Inside antenna portion _ 14 : Integrator 1 5 : High-frequency power source 1 6 a, 1 6 b : Power supply member φ 20 : Process gas supply system 21 : Variable capacitor 2 3 · Mounting table 3 0 : Exhaust Device t 5 0 : Control unit 5 1 : User interface 52 : Memory unit 6 1 a : Outer antenna circuit _ 6 1 b : Inside antenna circuit G: Substrate-24-