200818378 ‘ (1) 九、發明說明 【發明所屬之技術領域】 本發明關於一種基板傳輸設備和基板處理系統,特別 是關於一種用於將複數基板連續裝載在處理室內/從處理 室卸載的基板傳輸設備,以減少傳輸基板所花的時間,並 改善生產力。且本發明特別是關於一種使用該設備的基板 處理系統。 【先前技術】 近來,能同時處理複數基板的叢集(Cluster )系統, 通常使用在用於製造液晶顯示器、電漿面板顯示器、和半 導體裝置的基板處理系統中。 叢集系統通常指多腔室型基板處理系統,且該處理系 統包括有傳輸機械手(或處理器)和設在傳輸機械手周圍 的複數基板處理模組。 Φ 叢集系統包括傳輸室和設在傳輸室內可自由轉動的傳 輸機械手。用於執行處理基板之製程的處理室,安裝在傳 輸室的旁邊。此一叢集系統同時處理複數基板或連續執行 各種製程,以增加處理基板的量。爲了增加處理基板的量 ,在單一處理室內同時處理複數基板,以增加每單位時間 處理基板的量。 雖然在單一處理室內同時(或連續)處理複數基板, 但是處理前和處理後之基板在處理室內未有效率地交換, 造成時間的損失。 -4 - 200818378 . (2) 再者,當習知的叢集系統包括六邊形傳輸室(基本上 包括四個處理室和一個裝載鎖定室(load lock chamber) ),由於傳輸室所佔據的面積,所以叢集系統的面積和整 個叢集系統的寬度(其對叢集系統在生產線的配置很重要 )增加了,比維持傳輸室在真空狀態所需之真空系統期望 寬度和尺寸還大,導致增加設備成本和安置成本。此外, 當設-霞之處理室數目增加時,傳輸室的面積增加更多。 φ 因此,需要能夠同時(或連續)處理複數基板、且能 夠在處理室內有效率地交換處理前和處理後基板以處理複 數基板的基板處理系統。 【發明內容】 因此本發明導向提供一種基板傳輸設備和使用該設備 的基板處理系統,其具有效率地在其內處理基板的構造。 本發明也提供一種基板傳輸設備和使用該設備的基板 # 處理系統,其可減少傳輸基板所花的時間並改善生產力。 本發明也提供一種基板傳輸設備和使用該設備的基板 處理系統,其具有小的系統面積。 本發明也提供一種基板傳輸設備和使用該設備的基板 處理系統,其具有可減少花在其內之處理時間的構造。 本發明也提供一種基板傳輸設備和使用該設備的基板 處理系統,其具有在其內可改善處理室之利用性的構造。 本發明也提供一種基板傳輸設備和使用該設備的基板 處理系統,其具有顯著減少的系統面積和系統寬度。 -5- 200818378 (3) 本發明也提供一種基板傳輸設備和使用該設備的基板 處理系統,其減少了不需要的體積面積,以將設備成本和 設置成本減至最低。 本發明也提供一種基板處理系統,其能有效率地使用 半導體製造工廠內的空間佈局。 本發明也提供一種基板處理系統,其減少對應於一個 傳輸機械手之處理模組的個數,以改善生產量。 本發明也提供一種基板處理系統,其包括具有小驅動 面積的基板傳輸設備。 依據一例示的實施例,本發明提供一種用於傳輸基板 的設備,該設備用於在裝載鎖定室和第一及第二處理室之 間傳輸基板以處理複數基板。該設備包含:一驅動單元, 以供給旋轉力;至少一主軸,連接至該驅動單元;複數第 一迴轉板臂,以裝載/卸載該等基板至該第一處理室;和 複數第二迴轉板臂,以裝載/卸載該等基板至該第二處理 室。 較佳地’該寺弟一^和弟一^迴轉板臂中的每一'者包含: 用於裝載未處理之基板的至少一迴轉板臂;和用於卸載已 處理過之基板的至少一迴轉板臂。 較佳地’該等第一迴轉板臂和該等第二迴轉板臂分離 地安裝,且該主軸包括獨立旋轉的至少二不同主軸。 較佳地,該驅動單元包括經由該至少二不同主軸供給 旋轉力的至少一驅動單元。 較佳地’該等第一迴轉板臂和該等第二迴轉板臂中的 -6- 200818378 . (4) 每一者包含馬蹄形末端效應器和具有上側的支撐部,該末 端效應器包括具有開放側的開口,該基板的邊緣定位至該 上側。 較佳地,該末端效應器包括入口路徑,設置在裝載鎖 定室內之大氣壓力傳輸機械手的末端效應器經由該入口路 徑進入和退出,以傳輸和接收該等基板。 依據另一例示的實施例,本發明提供一種基板處理系 φ 統,其使用用於傳輸基板的設備。該系統包含:第一處理 室,包括至少二基板支撐台;第二處理室,包括至少二基 板支撐台;一傳輸室,該基板傳輸設備設置在該傳輸室內 ;一第一基板入口,形成在該第一處理室和該傳輸室之間 ;一第二基板入口,形成在該第二處理室和該傳輸室之間 ;和一第三基板入口,形成在該傳輸室和外部之間;其中 ,該基板傳輸設備經由該第三基板入口,從該外部接收該 等未處理的基板,並傳輸該等已處理過的基板至該外部, • 所以該等未處理的基板被傳輸至該第一或第二處理室,且 在該第一或第二處理室內處理之該等已處理過的基板,經 由該第三基板入口傳輸至該外部。 較佳地,該基板處理系統更包含連接至該第三基板入 口的裝載鎖定室,其中該裝載鎖定室包含大氣壓力傳輸機 械手,以在該大氣壓力下傳輸該等基板。 較佳地,該基板處理系統更包含冷卻室,以冷卻經由 該第三基板入口排出的該等已處理過的基板。 較佳地,該第一和第二處理室包含電漿室,在該等電 200818378 . (5) 漿室內執行電漿處理。 較佳地,該第一處理室包含電漿室,在該電漿室內執 行電漿處理,且該第二處理室包含冷卻室,以冷卻已處理 過之被加熱的基板。 較佳地,該基板處理系統更包含形成在該傳輸室和另 一外部之間的第四基板入口,且該基板傳輸設備從該外部 經由該第三基板入口接收該等未處理的基板,並將該等已 φ 處理過的基板經由該第四基板入口傳輸至該外部。 較佳地,該基扳處1里系統更包含連接至該第四基板入 口的裝載鎖定室,且該裝載鎖定室包含大氣壓力傳輸機械 手,以在該大氣壓力下傳輸該等基板。 較佳地,該基板處理系統更包含冷卻室,以冷卻經由 該第四基板入口排出的該等已處理過的基板。 依據另一例示的實施例,本發明提供一種用於傳輸基 板的設備,該設備用於在裝載鎖定室和處理室之間的傳輸 • 室內傳輸基板以處理複數基板。該設備包含散佈且設置在 該傳輸室之邊緣上的傳輸構件;且該複數傳輸構件同時接 收經由該裝載鎖定室而提供至該傳輸室之待命位置的複數 基板,以將該複數基板傳輸至基板支撐台的上側,該等基 板支撐台分別設置在該等處理室內,且該複數傳輸構件分 別從該等基板支撐台的上側接收基板,以將該等基板集中 傳輸至該傳輸室的該待命位置。 較佳地,該等傳輸構件中的每一者包含:一驅動單元 ,以供給旋轉力;二主軸,連接至該驅動單元;和複數迴 -8- 200818378 . (6) 轉板臂,以將該等基板裝載至該等對應的基板支撐台/從 該等對應的基板支撐台卸載該等基板。 較佳地,該等迴轉板臂中的每一者包含:用以裝載未 處理的基板的迴轉板臂;和用以卸載已處理過的基板的迴 轉板臂。 較佳地該等迴轉板臂中的每一者包含馬蹄形末端效應 器和具有上側的支撐部,該末端效應器包1舌~具有開放側的 Φ 開口,該基板的邊緣定位至該上側。 較佳地,展開該等傳輸構件,使得該等迴轉板臂的該 等末端效應器位在該等對應基板支撐台的該等上側,且收 合該等傳輸構件,使得該等迴轉板臂的該等末端效應器在 該傳輸室的該待命位置,在直立方向對齊單一對齊線。 依據另一例示的實施例,本發明提供一種設於傳輸室 內的基板傳輸設備,以在裝載鎖定室和處理室之間傳輸基 板以處理複數基板。該基板傳輸設備包含:複數主軸,設 置在該傳輸室之邊緣上以彼此相隔開;一驅動單元,以供 給驅動力至該複數主軸;和複數迴轉板臂,其分別設置在 該複數主軸,以迴轉而將該等基板裝載至該等對應的處理 室/從該等對應的處理室卸載該等基板。 較佳地,該等迴轉板臂中的每一者包含馬蹄形末端效 應器和具有上側的支撐部,該末端效應器包括具有開放側 的開口,該基板的邊緣定位至該上側,且該等迴轉板臂的 末端效應器迴轉至位在對應基板支撐台的該等上側,並在 該傳輸室的該待命位置,於直立方向對齊單一對齊線。 200818378 . (7) 較佳地’該等迴轉板臂中的每一者包含至少二天線桿 型的可伸展板臂。 較佳地,該等迴轉板臂中的每一者迴轉向在該傳輸室 之待命位置的該等基板支撐台,且該等可伸展的迴轉板臂 一步一步地縮回,使得該等末端效應器位在該等基板支撐 台的上側。 依據另一例示的實施例-,本發明提供一種基板處理系 統。該基板處理系統包含:一傳輸室,基板傳輸設備設置 在該傳輸室內;和第一和第二處理室,經由第一和第二入 口連接至該傳輸室的橫向側,且包括二基板支撐台;該基 板傳輸設備包括四傳輸構件,該等傳輸構件設在該傳輸室 的邊緣,以彼此相隔開;其中展開該等傳輸構件,以同時 接收從外部提.供至該傳輸室之待命位置的四基板,並將該 四基板傳輸至設在該第一和第二處理室內之四基板支撐台 的上側上,且展開該等傳輸構件,以分別從該四基板支撐 台的上側接收該等基板,並將該等基板分別傳輸至該傳輸 室的該待命位置。 較佳地該等傳輸室中的每一者包含:一驅動單元,以 供給旋轉力;二主軸,連接至該驅動單元;和複數迴轉板 臂,以將該等基板裝載至該等基板支撐台/從該等基板支 撐台卸載該等基板。 較佳地,該等迴轉板臂中的每一者包含馬蹄形末端效 應器和具有上側的支撐部,該末端效應器包括具有開放側 的開口,該基板的邊緣定位至該上側,且迴轉該等傳輸構 -10- 200818378 “ (8) 件,使得該等迴轉板臂的末端效應器迴轉至位在對應基板 支撐台的該等上側,並在該傳輸室的該待命位置,於直立 方向對齊單一對齊線。 較佳地,該等迴轉板臂中的每一者包含至少二天線桿 型的可伸展板臂。 較佳地,該基板處理系統更包含裝載鎖定室,其經由 第三基板入口連接至該傳輸室前側,其中該裝載鎖定室包 φ 含大氣壓力傳輸機械手,以在該大氣壓力下傳輸該等基板 〇 較佳地,該傳輸室的前側具有該第三入口向內凹的形 狀。 較佳地,該基板處理系統更包含位在裝載鎖定室內的 冷卻室,以冷卻經由該第三基板入口排出至該裝載鎖定室 之已處理過的基板。 較佳地,該第一和第二處理室包含電漿室,在該等電 φ 漿室內執行電漿處理。 依據另一例示的實施例,本發明提供一種基板處理系 統,該系統包含:一第一處理室,包括一基板支撐台;一 第二處理室,包括一基板支撐台;一傳輸室,該基板傳輸 設備設置在該傳輸室內;一第一基板入口,形成在該傳輸 室和外部之間;一第二基板入口,形成在該第一處理室和 該傳輸室之間;和一第三基板入口,形成在該第二處理室 和該傳輸室之間;且該基板傳輸設備經由該第一基板入口 ,從該外部接收該等未處理的基板,並傳輸該等已處理過 -11 - 200818378 . (9) 的基板至該外部,所以該基板傳輸設備將已接收之該等未 處理的基板經由第二或第三基板入口傳輸至該第一或第二 處理室,且接收在該第一或第二處理室內處理之該等已處 理過的基板,並經由該第一基板入口傳輸至該外部。 較佳地,該基板處理系統更包含裝載鎖定室,其連接 至該第一基板入口,其中該裝載鎖定室包含大氣壓力傳輸 機械手,以在該大氣壓力下傳輸該等基板。 φ 較佳地,該第一和第二處理室中至少一者包含電漿室 〇 較佳地,該第一和第二處理室中至少一者包含冷卻室 〇 較佳地,該第一和第二處理室中至少一者包含對齊室 〇 較佳地,該基板傳輸設備包含:一驅動單元,以供給 旋轉力;至少一主軸,連接至該驅動單元;複數第一迴轉 • 板臂,以裝載該等基板至該第一處理室/從該第一處理室 卸載該等基板;和複數第二迴轉板臂,以裝載該等基板至 該第二處理室/從該第二處理室卸載該等基板。 較佳地,該等第一迴轉板臂和該等第二迴轉板臂分離 地安裝,且該主軸包括獨立旋轉的至少二不同主軸。 較佳地,該驅動單元包括經由該至少二不同主軸供給 旋轉力的至少一驅動單元。 較佳地,該等第一迴轉板臂和該等第二迴轉板臂中的 每一者包含馬蹄形末端效應器和具有上側的支撐部,該末 -12- 200818378 , (10) 端效應器包括具有開放側的開口,該基板的邊緣定位至該 上側。 較佳地,該末端效應器包括入口路徑,設置在裝載鎖 定室內之大氣壓力傳輸機械手的末端效應器經由該入口路 徑進入和退出,以傳輸和接收該等基板。 依據另一例示的實施例,本發明提供一種基板處理系 統。該包含基板處理系統:一裝載鎖定室,包括分度盤, φ 其中複數載具設置在該分度盤前面;和複數處理組,設置 在裝載鎖定室的後側,且疊積成多層式,且該複數處理組 其中一組包括:第一傳輸室,第一基板傳輸設備設置在該 第一傳輸室;和第一及第二處理室,經由第一和第二入口 連接至該第一傳輸室的橫向側,且包栝二基板支撐台,且 該複數處理組其中另一組包括:第二傳輸室,第二基板傳 輸設備設置在該第二傳輸室;和第一及第二對齊室,經由 第一和第二入口連接至該第二傳輸室的橫向側,且包括二 φ 基板對齊器。 較佳地,展開該等第一傳輸構件,以同時接收提供在 該第一傳輸室之待命位置的四個基板,並將該四個基板傳 輸至設置在該第一和第二處理室內之四個基板支撐台的上 側,且收合該等第一傳輸構件,以接收該四個基板支撐台 上側的各基板,並將各該等基板傳輸至該第一傳輸室的該 待命位置。 較佳地,展開該等第二傳輸構件,以同時接收提供在 該第二傳輸室之待命位置的四個基板,並將該四個基板傳 -13- 200818378 . (11) 輸至設置在該第一和第二對齊室內之至少二個基板對齊器 ,且收合該等第二傳輸構件,以接收該至少二個基板對齊 器的各已對齊的基板,並將各該等已對齊的基板傳輸至該 第二傳輸室的該待命位置。 較佳地,該複數處理組其中另一組包括:第三傳輸室 ,第三基板傳輸設備設置在該第三傳輸室;和冷卻室,經 由第一入口連接至該第三傳輸室的側面,以冷卻至少一基 • 板。 較佳地,該第一、第二、和第三基板傳輸設備中的每 一者包含:一驅動單元,以供給旋轉力;至少一主軸,連 接至該驅動單元;和複數旋轉板臂,其以不同高度安裝至 該主軸,且被定位在相對於該主軸的對應高度。 較佳地,該等迴轉板臂中的每一者包含馬蹄形末端效 應器和具有上側的支撐部,該末端效應器包括具有開放側 的開口,該基板的邊緣定位至該上側,且迴轉該傳輸設備 Φ ,使得該等迴轉板臂的末端效應器位在對應位置,並在該 第一、第二、和第三傳輸室的該等待命位置,於直立方向 對齊單一對齊線。 較佳地,該第一基板傳輸設備包含複數迴轉板臂,以 同時接收提供在該第一傳輸室之待命位置的複數基板,並 將該等基板傳輸至該第一和第二處理室之該等基板支撐台 的上側上,以接收該等基板支撐台上側的各基板,並將待 集中傳輸的該等基板傳輸至該第一傳輸室的該待命位置。 較佳地,該等基板對齊器中的每一者包含:一旋轉夾 -14- 200818378 . (12) 頭,以裝載該基板;一感應器’以檢測裝載在該旋轉夾頭 上之該基板的對齊;和一升降器,以依據該等迴轉板臂的 高度調整該旋轉夾頭的高度。 較佳地,該裝載鎖定室包含大氣壓力傳輸機械手,以 在大氣壓力下傳輸該等基板。 較佳地,該第一和第二處理室包含電漿室,以執行電 漿處理。 較佳地,該裝載鎖定室包含雙臂型大氣壓力傳輸機械 手,其具有四個末端效應器,以從該-等載具一次取出四個 基板,並將該四個基板傳輸至該第一傳輸室或該第二傳輸 室;和該第一和第二傳輸室中的每一者包含第三基板入口 ,該等基板從該裝載鎖定室經由該第三基板入口進入和排 出,且其彼此對齊使得當該大氣壓力傳輸機械手上下運動 時,能傳輸該等基板。 【實施方式】 但是本發明可以不同的形式具體化,且不應解釋爲受 限於本文所記載的實施例。反而,這些實施例提供做爲較 是本發明的軔例。在圖式中,爲了清晰起見’ δ夸大了各層 和區域的厚度。會使本發明主題混淆之熟知功能和構造的 詳細描述將省略。下文將參考附圖(其內顯示本發明的較 佳實施例)更完整地描述依據本發明之基板傳輸設備和使 用該設備的基板處理系統。 -15- 200818378 參 (13) 實施例一 圖1 A是例示本發明第一實施例之基板處理系 構造的視圖,圖1 B是例示圖1 A基板處理系統的平 參考圖1,本發明的基板處理系統包括第一和第二 500、600、和設置在第一、第二處理室500、600 傳輸室400。分度盤100設置在裝載鎖定室2 00前 分度盤100內安裝有複數載具110。分度盤100稱 φ 前端模組(下文稱爲EFEM),且在某些場合係指 載鎖定室。如果需要的話,裝載鎖定室200可包括 3 〇 〇,用以冷卻已處理過的基板。 裝載鎖定室200包括在大氣壓力下作業的大氣 輸機械手2 1 0。大氣壓力傳輸機械手2 1 0在傳輸室 分度盤100之間傳輸基板。操作大氣壓力傳輸機械 ,以在載具110和傳輸室40 0之間傳輸基板W。大 傳輸機械手210被包括有雙臂構造的機械手執行, φ 具有四個末端效應器,以從載具1 1 〇取出四片基板 將該等基板放入傳輸室400內。大氣壓力傳輸機械 可上升和下降。一般半導體製造製程所使用的各種 和本發明之本實施例的雙臂型機械手,可用做大氣 輸機械手2 1 0。例如可使用具有各種構造的機械手 具有葉片型臂且以一臂處理八片基板W的機械手 有四個或更多臂的機械手、和上述機械手的組合。 基板支撐台 520、522、620、622中每二個分 第一和第二處理室500、600的前端、後端、和個 統整體 面圖。 處理室 之間的 面,該 爲設備 包括裝 冷卻室 壓力傳 40 0和 手210 氣壓力 該構造 W,並 手210 機械手 壓力傳 ,例如 、包括 別設在 別路徑 -16- 200818378 . (14) 上。該等路徑是基板傳輸設備8 0 0之迴轉板臂旋轉的路徑 〇 第一和第二處理室500、600包括如真空室的電漿源 7〇〇,以執行預定的電漿處理製程。可建構第一和第二處 理室500、600,以執行各種基板處理作業。例如第一和第 二處理室500、600可爲用於使用電漿移除光阻劑的灰化 室、用於沉费絕緣層的化學氣相沉積(CVD )室、用於在 絕緣層蝕刻孔或開口以形成互連構造的触刻室、用於沉積 阻障層的物理氣相-沉積(PVD )室、或用於沉積金屬層的 物理氣相沉積室。 由本發明之本實施例的基板處理系統所處理的基板W ,通常是用於製造半導體電路的晶圓基板、或用於製造液 晶顯示器的玻璃基板。爲了執行完整製造積體電路或晶片 所需的全部製程,可需要複數處理系統,不只本發明之本 實施例的基板處理系統而已。但是,爲了使本發明清晰, 所以省略了熟悉該項技藝者所瞭解的普通構造。 本發明之此實施例的基板處理系統包括位在中央的傳 輸室400、及分別設在傳輸室400之橫向側邊的第一和第 二處理室500、600。至少二個基板支撐台520、522、620 、622分別設置在第一和第二處理室5 00、600中。傳輸模 組4 0 0包括基板傳輸設備8 0 0。 第一基板入口 510形成在傳輸室400和第一處理室 500之間,且第二基板入口 610形成在傳輸室400和第二 處理室600之間。第三基板入口 410形成在傳輸室400和 -17- 610、 200818378 , (15) 裝載鎖定室200之間。第一至第三基板入口 510、 410由間縫閥(slit valve,未示)打開或關閉。 處理前和處理後基板在傳輸室400內的交換, 壓力傳輸機械手210在大氣壓力下執行,其中第一 基板入口 510、610被關閉,且第三基板入口 410 。另一方面,處理前和處理後基板在第一、二處理 、600和傳輸室400之間的交換,由基板傳輸設備 行,且在真空狀態中進行,其中第三基板入口 410 且第一、二基板入口 5 1 0、6 1 0被打開。 圖2是例示設置在傳輸室內之基板傳輸設備的 。參考圖2,基板傳輸設備800包括用以提供旋轉 動單元840、連接至驅動單元840單一主軸83 0、 在主軸8 3 0的複數迴轉板臂8 1 0。 複數迴轉板臂8 1 0包括複數第一迴轉板臂和複 迴轉板臂。該等第一迴轉板臂用以將基板裝載在第 室5 〇〇上、或從第一處理室500卸載基板;該等第 板臂用以將基板裝載在第二處理室600上、或從第 室6 00卸載基板。第一和第二迴轉板臂交替地配置 第一和第二迴轉板臂可連續地配置。複數的迴轉板 可分成裝載臂82〇和卸載臂822。在此案例中, 8 2 2較佳是配置成比裝載臂8 2 0低。裝載臂8 2 〇和 8 22配成對,且在如圖所示的實施例中,設置八個 臂配成四對。如圖1 B所例示,複數迴轉板臂8 i 〇 扇形,且可迴轉、上升、和下降。裝載臂82〇和 由大氣 和第二 被打開 室 500 8 00執 被關閉 透視圖 力的驅 和安裝 數第二 一處理 二迴轉 二處理 。但是 臂 810 卸載臂 卸載臂 迴轉板 展開成 卸載臂 -18- 200818378 (16) 8 2 2配成對供操作。 雖然未顯示在圖式中,但是驅動單元840包括用以產 生旋轉力的電動馬達和用以傳輸所產生之旋轉力至主軸 83 0的齒輪組合體,使複數迴轉板臂810執行所欲的作業 。因此,複數迴轉板臂810安裝在主軸830,且如圖1B 所例示,該等迴轉板臂8 1 0對稱地展開成扇形,且收合在 傳輸室400的不同旋轉半徑。 φ 圖3例示基板傳輸設備的範例,其具有被獨立地驅動 的上部和下部。參考圖3,另一實施例的基板傳輸設備 8 00包括下、上主軸830a 、830b和下、上驅動單元840a 、840b。裝載臂820和卸載臂822分別安裝至下主軸83 0 a 和上主軸830b。下、上驅動單元840a、840b分別驅動下 、上主軸830a 、830b。此處的下、上主軸 830a 、830b 兩者,最好是對齊相同的軸。 圖4是例示迴轉板臂之構造的透視圖。參考圖4 ’設 φ 置在基板傳輸設備800內的複數迴轉板臂810包含馬蹄形 末端效應器8 1 2和複數支撐部8 1 4。該末端效應器8 1 2包 括含有開放側的開口 8 1 3。基板的邊緣定位在該等支撐部 8 1 4的上側。提供開口 8 1 3以允許設置在基板台內的舉升 銷能進入和退出。末端效應器8 1 2具有入口路徑8 1 5 ’大 氣壓力傳輸機械手210的末端效應器212經由該入口路徑 815進入或退出。迴轉板臂810可以具有本發明之範圍的 其他形式修飾。 圖5A至5E是連續地例示基板傳輸設備執行基板交換 -19- 200818378 • (17) 作業的視圖。首先參考圖5A,如箭頭S10所指示者,在 第一和第二基板入口 5 1 0、6 1 0關閉的狀態中,當第三基 板入口 4 1 0打開時,未處理的基板(處理前的基板)W1 被傳輸至基板傳輸設備800。當完成傳輸基板W1時,關 閉第三基板入口 410,且傳輸室400被轉換成和第一、二 處理室5 00、600之內部相同的真空狀態。當然,本發明 之此實施例的系統中設置用於真空狀態的泵系統,但是爲 φ 了方便所以省略未示。 其次,如圖5B中的箭頭S20所示,當複數支撐台 520、522、620、622的舉升銷上升時,已處理過的基板 W2被舉升至預定的高度。爲配合此作業,第一和第二基 板入口 510、610被打開。此時,前基板支撐台520之已 上升的舉升銷,其高度比後基板支撐台522、622之舉升 銷的高度相對地低。因此,用於裝載/卸載的裝載臂820, 其旋轉不會和舉升銷相干涉。 φ 繼續地,如圖5C中的箭頭S30所示,基板傳輸設備 8〇〇的裝載臂820和卸載臂822,成對地對稱迴轉,並展 開成扇形。此時,已處理過的基板W1從舉升銷傳輸至卸 載臂822。繼續地,如圖5D中的箭頭S40所示,當傳輸 已處理過的基板W1時,卸載臂822回到傳輸室400的起 始位置。如箭頭S 5 0所示,舉升銷再度上升,以從裝載臂 820接收未處理的基板W2。 如圖5E中的箭頭S60所指示者,裝載臂820也回到 傳輸室400的起始位置。同時,第一和第二基板入口 510 -20- 200818378 . (18) 、610再度關閉。如箭頭S70所示,舉升銷下降,以將未 處理的基板 W2放置在基板支撐台520、522、620、和 622 上。 傳輸室400被轉換至大氣壓力狀態,且第三基板入口 4 1 0被打開。如圖5 E中的箭頭S 8 0所指示者,裝載鎖定 室200的大氣壓力傳輸機械手210,接收來自卸載臂822 之已處理過的基板W1,並從傳輸室400退出。 φ 交換基板的連續作業S10至S80,是在一範圍內連續 且同時地執行,前作業和後作業在該區域內不會彼此干擾 ,以將交換基板所需的時間最小化。可瞭解的是,作業 S10和S80在重複的基板交換作業期間是同時執行。換言 之,基板的交換在傳輸室400和裝載鎖定室200之間執行 ,藉此,前作業所卸載的已處理過的基板,和待同時裝載 的處理前基板相交換。 卸載的已處理過的基板 W1被大氣壓力傳輸機械手 φ 210傳輸至冷卻室3 00,且被冷卻以堆積在載具110中。 雖然本發明之此實施例的冷卻室3 00是分離地設置,但是 如果傳輸室400執行冷卻的功能,則可省略分離的冷卻室 3 00。在其他實施例中,第一和第二處理室5 00、600其中 之一,可當作冷卻室。例如可將第一處理室5 00當作電漿 室,且第二處理室6 0 0做爲冷卻室。在此情況中,第一處 理室5 0 0執行基板的電漿處理’且基板傳輸設備8 0 0將已 處理過的基板從第一處理室500傳輸至第二處理室600以 冷卻。已冷卻的基板可被從第二處理室600傳輸至裝載鎖 -21 - 200818378 • (19) 定室200。 因此,依據本發明之此實施例的基板處理系統,爲了 同時處理複數基板,第一和第二處理室500、600平行地 配置,且傳輸室400設在第一處理室500和第二處理室 600之間。設置基板傳輸設備800使能在結構中快速地交 換基板,以便能同時處理且快速地交換很多的基板。在此 實施例中,在第一和第二處理室5 00、6 0 0中的各二片基 φ 板,總共四片基板可在一個製程中同時處理和交換。 本發明的基板處理系統,可被下述的替代性實施例修 圖6例示具有使用二驅動軸之基板傳輸設備的例子。 參考圖6,基板傳輸設備800可分成獨立被驅動的左部分 和右部分。換言之_,用於傳輸基板之第一處理室500的迴 轉板臂和用於傳輸基板之第二處理室600的迴轉板臂,可 分離地被驅動。 Φ 如圖7A所例示,上述建構的基板傳輸設備包括彼此 分離的第一和第二主軸830a、83 0b、及獨立地驅動第一、 二主.軸的第一和第二驅動單元 840a、840b。再者,如圖 7B所示,上述建構的基板傳輸設備可包括分成上部分和 下部分的待驅動第一至第四主軸83 0a-8 3 0d、及第一至第 四驅動單元840a-840d。 此外,如圖8、9A、9B所例示,在其他實施例中,基 板傳輸設備可被修飾成包括四或八支主軸8 3 0 a- 8 3 0 d (或 83 0a- 83 0h )、及四或八個驅動單元 840a-840d (或 840a- -22-200818378 ' (1) EMBODIMENT OF THE INVENTION [Technical Field] The present invention relates to a substrate transfer apparatus and a substrate processing system, and more particularly to a substrate transfer for continuously loading/unloading a plurality of substrates in/from a processing chamber Equipment to reduce the time it takes to transport substrates and improve productivity. And the invention relates in particular to a substrate processing system using the apparatus. [Prior Art] Recently, a cluster system capable of simultaneously processing a plurality of substrates is generally used in a substrate processing system for manufacturing a liquid crystal display, a plasma panel display, and a semiconductor device. A cluster system generally refers to a multi-chamber type substrate processing system, and the processing system includes a transfer robot (or processor) and a plurality of substrate processing modules disposed around the transfer robot. The Φ cluster system consists of a transfer chamber and a transport robot that is free to rotate in the transfer chamber. A processing chamber for performing a process for processing a substrate is installed beside the transfer chamber. This cluster system processes a plurality of substrates simultaneously or continuously performs various processes to increase the amount of substrate processed. In order to increase the amount of substrate processed, a plurality of substrates are simultaneously processed in a single processing chamber to increase the amount of substrate processed per unit time. Although a plurality of substrates are simultaneously (or continuously) processed in a single processing chamber, the substrates before and after the processing are not efficiently exchanged in the processing chamber, resulting in a loss of time. -4 - 200818378 . (2) Furthermore, when the conventional cluster system includes a hexagonal transfer chamber (basically including four processing chambers and a load lock chamber), the area occupied by the transfer chamber Therefore, the area of the cluster system and the width of the entire cluster system (which is important for the configuration of the cluster system in the production line) are increased, which is greater than the desired width and size of the vacuum system required to maintain the vacuum state of the transfer chamber, resulting in increased equipment costs. And placement costs. In addition, the area of the transfer chamber increases more as the number of chambers is set to increase. φ Therefore, there is a need for a substrate processing system capable of simultaneously (or continuously) processing a plurality of substrates and capable of efficiently exchanging pre-process and post-process substrates in a processing chamber to process a plurality of substrates. SUMMARY OF THE INVENTION The present invention therefore provides a substrate transfer apparatus and a substrate processing system using the same, which have a configuration in which a substrate is efficiently processed therein. The present invention also provides a substrate transfer apparatus and a substrate #processing system using the same, which can reduce the time taken to transport the substrate and improve productivity. The present invention also provides a substrate transfer apparatus and a substrate processing system using the same, which has a small system area. The present invention also provides a substrate transfer apparatus and a substrate processing system using the same, which have a configuration capable of reducing the processing time spent therein. The present invention also provides a substrate transfer apparatus and a substrate processing system using the same, which has a configuration in which the utilization of the processing chamber can be improved. The present invention also provides a substrate transfer apparatus and a substrate processing system using the same, which have significantly reduced system area and system width. -5- 200818378 (3) The present invention also provides a substrate transfer apparatus and a substrate processing system using the same, which reduces an unnecessary volume area to minimize equipment cost and installation cost. The present invention also provides a substrate processing system that efficiently utilizes the spatial layout within a semiconductor fabrication facility. The present invention also provides a substrate processing system that reduces the number of processing modules corresponding to one transfer robot to improve throughput. The present invention also provides a substrate processing system including a substrate transfer apparatus having a small drive area. According to an exemplary embodiment, the present invention provides an apparatus for transporting a substrate for transporting a substrate between a load lock chamber and first and second processing chambers to process a plurality of substrates. The apparatus includes: a driving unit for supplying a rotational force; at least one spindle coupled to the driving unit; a plurality of first rotating plate arms for loading/unloading the substrates to the first processing chamber; and a plurality of second rotating plates An arm to load/unload the substrates to the second processing chamber. Preferably, 'each of the temples and the other ones of the rotary arm include: at least one swivel arm for loading an unprocessed substrate; and at least one for unloading the processed substrate Rotary plate arm. Preferably, the first swivel arm and the second swivel arm are mounted separately, and the main shaft includes at least two different main shafts that rotate independently. Preferably, the drive unit includes at least one drive unit that supplies a rotational force via the at least two different main shafts. Preferably, the first first slewing arm and the second slewing arm are -6-200818378. (4) each comprising a horseshoe end effector and a support having an upper side, the end effector comprising An opening on the open side, the edge of the substrate being positioned to the upper side. Preferably, the end effector includes an inlet path through which an end effector of an atmospheric pressure transfer robot disposed in the lock lock chamber enters and exits to transmit and receive the substrates. According to another illustrative embodiment, the present invention provides a substrate processing system that uses an apparatus for transporting a substrate. The system comprises: a first processing chamber comprising at least two substrate support tables; a second processing chamber comprising at least two substrate support tables; a transfer chamber, the substrate transfer device being disposed in the transfer chamber; a first substrate inlet formed in the Between the first processing chamber and the transfer chamber; a second substrate inlet formed between the second processing chamber and the transfer chamber; and a third substrate inlet formed between the transfer chamber and the exterior; Receiving, by the substrate transfer device, the unprocessed substrates from the outside through the third substrate inlet, and transmitting the processed substrates to the outside, so that the unprocessed substrates are transferred to the first Or the second processing chamber, and the processed substrates processed in the first or second processing chamber are transferred to the outside via the third substrate inlet. Preferably, the substrate processing system further includes a load lock chamber coupled to the third substrate inlet, wherein the load lock chamber includes an atmospheric pressure transfer robot to transport the substrates at the atmospheric pressure. Preferably, the substrate processing system further includes a cooling chamber to cool the processed substrates discharged through the third substrate inlet. Preferably, the first and second processing chambers comprise a plasma chamber, and the plasma treatment is performed in the plasma chamber of the 1818378. (5). Preferably, the first processing chamber includes a plasma chamber in which plasma processing is performed, and the second processing chamber includes a cooling chamber to cool the processed substrate that has been heated. Preferably, the substrate processing system further includes a fourth substrate inlet formed between the transfer chamber and the other outer portion, and the substrate transfer device receives the unprocessed substrates from the outside via the third substrate inlet, and The φ-processed substrates are transferred to the outside via the fourth substrate inlet. Preferably, the base 1 system further includes a load lock chamber coupled to the fourth substrate inlet, and the load lock chamber includes an atmospheric pressure transfer robot to transport the substrates at the atmospheric pressure. Preferably, the substrate processing system further includes a cooling chamber to cool the processed substrates discharged through the fourth substrate inlet. In accordance with another illustrative embodiment, the present invention provides an apparatus for transporting a substrate for transport between a load lock chamber and a process chamber. • The substrate is transported indoors to process a plurality of substrates. The apparatus includes a transfer member interspersed and disposed on an edge of the transfer chamber; and the plurality of transfer members simultaneously receive a plurality of substrates provided to a standby position of the transfer chamber via the load lock chamber to transfer the plurality of substrates to the substrate On the upper side of the support table, the substrate support tables are respectively disposed in the processing chambers, and the plurality of transfer members respectively receive the substrates from the upper sides of the substrate support tables to collectively transfer the substrates to the standby position of the transfer chamber . Preferably, each of the transmission members comprises: a drive unit for supplying a rotational force; two spindles connected to the drive unit; and a plurality of back-8-200818378. (6) a rotary arm to The substrates are loaded onto/unloaded from the corresponding substrate support stations. Preferably, each of the swivel plate arms includes: a swivel plate arm for loading an unprocessed substrate; and a swivel plate arm for unloading the processed substrate. Preferably, each of the swivel plate arms includes a horseshoe end effector and a support having an upper side, the end effector package having a Φ opening having an open side, the edge of the substrate being positioned to the upper side. Preferably, the transmission members are deployed such that the end effectors of the rotary plate arms are positioned on the upper sides of the corresponding substrate support tables, and the transmission members are folded such that the rotary plate arms The end effectors align a single alignment line in an upright orientation at the standby position of the transfer chamber. In accordance with another illustrative embodiment, the present invention provides a substrate transfer apparatus disposed within a transfer chamber for transporting a substrate between a load lock chamber and a process chamber to process a plurality of substrates. The substrate transfer apparatus includes: a plurality of spindles disposed on edges of the transfer chamber to be spaced apart from each other; a drive unit to supply driving force to the plurality of spindles; and a plurality of rotary plate arms respectively disposed on the plurality of spindles The substrates are loaded into/to the corresponding processing chambers/the substrates are unloaded from the corresponding processing chambers. Preferably, each of the rotary plate arms includes a horseshoe end effector and a support having an upper side, the end effector including an opening having an open side, the edge of the substrate being positioned to the upper side, and the rotation The end effectors of the plate arms are pivoted to the upper side of the corresponding substrate support table, and at the standby position of the transfer chamber, a single alignment line is aligned in the upright direction. 200818378. (7) Preferably each of the swivel plate arms comprises at least two antenna rod type extendable plate arms. Preferably, each of the swivel plate arms is turned back to the substrate support table at the standby position of the transfer chamber, and the extendable swivel plate arms are retracted step by step to enable the end effect The device is located on the upper side of the substrate support table. According to another illustrative embodiment, the present invention provides a substrate processing system. The substrate processing system includes: a transfer chamber in which the substrate transfer device is disposed; and first and second processing chambers connected to the lateral side of the transfer chamber via the first and second inlets, and including two substrate support tables The substrate transport apparatus includes four transport members disposed at edges of the transport chamber to be spaced apart from each other; wherein the transport members are deployed to simultaneously receive a standby position from the outside to the transport chamber a fourth substrate, and transmitting the four substrates to an upper side of the four substrate supporting stages disposed in the first and second processing chambers, and deploying the transmitting members to respectively receive the substrates from the upper side of the four substrate supporting table And transferring the substrates to the standby position of the transfer chamber, respectively. Preferably each of the transmission chambers comprises: a drive unit for supplying a rotational force; two spindles coupled to the drive unit; and a plurality of rotary plate arms for loading the substrates onto the substrate support tables / Unloading the substrates from the substrate support stations. Preferably, each of the swivel plate arms comprises a horseshoe end effector and a support having an upper side, the end effector comprising an opening having an open side, the edge of the substrate being positioned to the upper side, and the turning Transmission structure -10- 200818378 " (8), such that the end effectors of the slewing plate arms are swiveled to the upper side of the corresponding substrate support table, and aligned in the upright direction at the standby position of the transfer chamber Preferably, each of the swivel plate arms comprises at least two antenna rod type extendable plate arms. Preferably, the substrate processing system further comprises a load lock chamber connected via a third substrate inlet To the front side of the transfer chamber, wherein the load lock chamber package φ comprises an atmospheric pressure transfer robot for transporting the substrates at the atmospheric pressure. Preferably, the front side of the transfer chamber has the shape of the third inlet inwardly concave Preferably, the substrate processing system further comprises a cooling chamber located in the load lock chamber to cool the processed substrate discharged to the load lock chamber via the third substrate inlet. Preferably, the first and second processing chambers comprise a plasma chamber in which plasma processing is performed. According to another illustrative embodiment, the present invention provides a substrate processing system, the system comprising: The first processing chamber includes a substrate supporting table; a second processing chamber includes a substrate supporting table; a transfer chamber, the substrate transfer device is disposed in the transfer chamber; and a first substrate inlet is formed in the transfer chamber and the outside a second substrate inlet formed between the first processing chamber and the transfer chamber; and a third substrate inlet formed between the second processing chamber and the transfer chamber; and the substrate transfer device via The first substrate inlet receives the unprocessed substrates from the outside, and transmits the substrates that have been processed -11 - 200818378 . (9) to the outside, so the substrate transfer device will have received the Processing the substrate to the first or second processing chamber via the second or third substrate inlet, and receiving the processed substrates processed in the first or second processing chamber, and via the first substrate Preferably, the substrate processing system further includes a load lock chamber coupled to the first substrate inlet, wherein the load lock chamber includes an atmospheric pressure transfer robot to transmit the atmospheric pressure at the atmospheric pressure Preferably, at least one of the first and second processing chambers comprises a plasma chamber. Preferably, at least one of the first and second processing chambers comprises a cooling chamber. Preferably, the first Preferably, at least one of the first and second processing chambers includes an alignment chamber. Preferably, the substrate transfer apparatus includes: a drive unit for supplying a rotational force; at least one spindle coupled to the drive unit; and a plurality of first swings; Loading the substrates to/from the first processing chamber to unload the substrates; and a plurality of second rotating plate arms to load the substrates to/from the second processing chamber Unload the substrates. Preferably, the first swivel arm and the second swivel arm are mounted separately, and the main shaft includes at least two different main shafts that rotate independently. Preferably, the drive unit includes at least one drive unit that supplies a rotational force via the at least two different main shafts. Preferably, each of the first slewing arm and the second slewing arm comprises a horseshoe end effector and a support having an upper side, the end -12-200818378, (10) end effector comprising An opening having an open side, the edge of the substrate being positioned to the upper side. Preferably, the end effector includes an inlet path through which an end effector of an atmospheric pressure transfer robot disposed in the lock lock chamber enters and exits to transmit and receive the substrates. According to another illustrative embodiment, the present invention provides a substrate processing system. The substrate processing system comprises: a load lock chamber comprising an indexing disk, φ wherein the plurality of carriers are disposed in front of the indexing plate; and a plurality of processing groups disposed on the rear side of the load lock chamber and stacked in a multi-layer manner And one of the plurality of processing groups includes: a first transfer chamber, the first substrate transfer device is disposed in the first transfer chamber; and the first and second processing chambers are connected to the first transfer via the first and second inlets a lateral side of the chamber, and including two substrate support tables, and the other of the plurality of processing groups includes: a second transfer chamber, the second substrate transfer device is disposed in the second transfer chamber; and the first and second alignment chambers Connected to the lateral side of the second transfer chamber via the first and second inlets and including a two φ substrate aligner. Preferably, the first transmission members are unfolded to simultaneously receive four substrates provided in a standby position of the first transmission chamber, and the four substrates are transferred to four disposed in the first and second processing chambers. The upper sides of the substrate support stages are folded and the first transfer members are folded to receive the substrates on the upper side of the four substrate support stages, and each of the substrates is transferred to the standby position of the first transfer chamber. Preferably, the second transmission members are unfolded to simultaneously receive the four substrates provided in the standby position of the second transmission chamber, and the four substrates are transmitted to -13, 18,378,378 (11). At least two substrate aligners in the first and second alignment chambers, and the second transmission members are folded to receive the aligned substrates of the at least two substrate aligners, and each of the aligned substrates Transfer to the standby position of the second transfer chamber. Preferably, the other of the plurality of processing groups includes: a third transfer chamber, the third substrate transfer device is disposed in the third transfer chamber; and a cooling chamber connected to a side of the third transfer chamber via the first inlet, To cool at least one base plate. Preferably, each of the first, second, and third substrate transfer devices includes: a drive unit to supply a rotational force; at least one spindle coupled to the drive unit; and a plurality of rotating plate arms, Mounted to the spindle at different heights and positioned at a corresponding height relative to the spindle. Preferably, each of the swivel plate arms includes a horseshoe end effector and a support having an upper side, the end effector including an opening having an open side, the edge of the substrate being positioned to the upper side, and the transfer is reversed The device Φ is such that the end effectors of the swivel plate arms are in the corresponding positions, and the single alignment line is aligned in the upright direction at the waiting position of the first, second, and third transfer chambers. Preferably, the first substrate transfer device includes a plurality of rotary plate arms for simultaneously receiving a plurality of substrates provided at a standby position of the first transfer chamber, and transmitting the substrates to the first and second processing chambers Waiting on the upper side of the substrate support table to receive the substrates on the upper side of the substrate support table, and transferring the substrates to be collectively transferred to the standby position of the first transfer chamber. Preferably, each of the substrate aligners comprises: a rotating clamp-14-200818378. (12) a head for loading the substrate; an inductor 'to detect the substrate loaded on the rotating chuck Aligning; and a lifter to adjust the height of the rotary chuck according to the height of the rotary arm. Preferably, the load lock chamber includes an atmospheric pressure transfer robot for transporting the substrates at atmospheric pressure. Preferably, the first and second processing chambers comprise a plasma chamber to perform a plasma treatment. Preferably, the load lock chamber comprises a dual-arm type atmospheric pressure transmission robot having four end effectors for taking out four substrates at a time from the carrier and transmitting the four substrates to the first a transfer chamber or the second transfer chamber; and each of the first and second transfer chambers includes a third substrate inlet, the substrates entering and exiting from the load lock chamber via the third substrate inlet, and The alignment enables the substrates to be transported when the atmospheric pressure transfer robot moves down. [Embodiment] The present invention may be embodied in various forms and should not be construed as being limited to the embodiments described herein. Rather, these embodiments are provided as an example of the invention. In the drawings, δ exaggerates the thickness of layers and regions for the sake of clarity. A detailed description of well-known functions and constructions which obscure the subject matter of the present invention will be omitted. Hereinafter, a substrate transfer apparatus and a substrate processing system using the same according to the present invention will be more fully described with reference to the accompanying drawings in which preferred embodiments of the present invention are shown. -15- 200818378 (13) Embodiment 1 FIG. 1A is a view illustrating a configuration of a substrate processing system according to a first embodiment of the present invention, and FIG. 1B is a plan view illustrating a substrate processing system of FIG. 1 with reference to FIG. The substrate processing system includes first and second 500, 600, and transfer chambers 400 disposed in the first and second processing chambers 500, 600. The indexing plate 100 is disposed before the load lock chamber 200. The plurality of carriers 110 are mounted in the indexing plate 100. The indexing plate 100 is referred to as a φ front end module (hereinafter referred to as EFEM) and, in some cases, a load lock chamber. If desired, the load lock chamber 200 can include 3 〇 用以 to cool the processed substrate. The load lock chamber 200 includes an atmospheric manipulator 210 that operates at atmospheric pressure. The atmospheric pressure transmitting robot 210 transmits the substrate between the transfer chamber indexing discs 100. The atmospheric pressure transmitting machine is operated to transport the substrate W between the carrier 110 and the transfer chamber 40 0 . The large transfer robot 210 is executed by a robot including a two-arm configuration, and φ has four end effectors for taking out four substrates from the carrier 1 1 to place the substrates in the transfer chamber 400. Atmospheric pressure transmission machinery can rise and fall. The various types of dual-arm type manipulators used in the general semiconductor manufacturing process and the present embodiment of the present invention can be used as an atmospheric manipulator 210. For example, a robot having various configurations can be used. A robot having a blade type arm and an eight-piece substrate W is handled by one arm, and a robot having four or more arms, and a combination of the above-described robots. Each of the substrate support stages 520, 522, 620, 622 is divided into a front end, a rear end, and a general overall view of the first and second processing chambers 500, 600. The surface between the processing chambers, which includes the cooling chamber pressure transmission 40 0 and the hand 210 gas pressure, the construction W, and the hand 210 robot pressure transmission, for example, including the other path -16-200818378. (14 ). The paths are paths in which the rotary plate arms of the substrate transfer apparatus 800 rotate. 〇 The first and second process chambers 500, 600 include a plasma source such as a vacuum chamber to perform a predetermined plasma processing process. The first and second processing chambers 500, 600 can be constructed to perform various substrate processing operations. For example, the first and second processing chambers 500, 600 may be an ashing chamber for removing photoresist using a plasma, a chemical vapor deposition (CVD) chamber for depositing an insulating layer, for etching in an insulating layer A hole or opening to form an etch chamber of an interconnect configuration, a physical vapor-deposition (PVD) chamber for depositing a barrier layer, or a physical vapor deposition chamber for depositing a metal layer. The substrate W processed by the substrate processing system of the present embodiment of the present invention is generally a wafer substrate for manufacturing a semiconductor circuit or a glass substrate for manufacturing a liquid crystal display. In order to perform all the processes required to completely fabricate an integrated circuit or wafer, a complex processing system may be required, not only the substrate processing system of the present embodiment of the present invention. However, in order to clarify the invention, the ordinary constructions known to those skilled in the art are omitted. The substrate processing system of this embodiment of the present invention includes a centrally located transfer chamber 400 and first and second processing chambers 500, 600 respectively disposed on lateral sides of the transfer chamber 400. At least two substrate support tables 520, 522, 620, 622 are disposed in the first and second processing chambers 500, 600, respectively. The transmission module 400 includes a substrate transfer device 800. A first substrate inlet 510 is formed between the transfer chamber 400 and the first process chamber 500, and a second substrate inlet 610 is formed between the transfer chamber 400 and the second process chamber 600. A third substrate inlet 410 is formed between the transfer chambers 400 and -17-610, 200818378, (15) load lock chambers 200. The first to third substrate inlets 510, 410 are opened or closed by a slit valve (not shown). The exchange of the substrate in the transfer chamber 400 before and after processing, the pressure transfer robot 210 is performed at atmospheric pressure, wherein the first substrate inlets 510, 610 are closed and the third substrate inlet 410. On the other hand, the exchange of the substrate between the first and second processes, 600 and the transfer chamber 400 before and after the process is performed by the substrate transfer device row, and is performed in a vacuum state, wherein the third substrate inlet 410 is first and The two substrate inlets 5 1 0, 6 1 0 are opened. Fig. 2 is a view showing a substrate transfer apparatus provided in a transfer chamber. Referring to Fig. 2, the substrate transfer apparatus 800 includes a plurality of rotary plate arms 810 for providing a rotary unit 840, a single spindle 83 0 connected to the drive unit 840, and a spindle 830. The plurality of swivel arm 8 1 0 includes a plurality of first swivel arms and a complex swivel arm. The first swivel plate arms are used to load the substrate on the first chamber 5 or unload the substrate from the first processing chamber 500; the first plate arms are used to load the substrate on the second processing chamber 600, or The first chamber 00 unloads the substrate. The first and second swivel arms are alternately arranged. The first and second swivel arms are continuously configurable. The plurality of swivel plates can be divided into a loading arm 82A and an unloading arm 822. In this case, 8 2 2 is preferably configured to be lower than the loading arm 820. The loading arms 8 2 〇 and 8 22 are paired, and in the embodiment as shown, eight arms are arranged in four pairs. As illustrated in Fig. 1B, the plurality of swivel arms 8i are fan-shaped and can be swung, raised, and lowered. The loading arm 82 is closed by the atmosphere and the second opened chamber 500 8 00 is closed. The perspective force is driven and the number of installations is the second one. However, the arm 810 unloading arm unloading arm swivel plate is unfolded into an unloading arm -18- 200818378 (16) 8 2 2 Paired for operation. Although not shown in the drawings, the drive unit 840 includes an electric motor for generating a rotational force and a gear combination for transmitting the generated rotational force to the main shaft 83 0 to cause the plurality of swing arm 810 to perform desired work. . Accordingly, the plurality of swivel plate arms 810 are mounted to the main shaft 830, and as illustrated in Fig. 1B, the swivel plate arms 81 1 are symmetrically flared into a fan shape and are folded at different rotation radii of the transfer chamber 400. φ Figure 3 illustrates an example of a substrate transfer apparatus having upper and lower portions that are independently driven. Referring to Fig. 3, a substrate transfer apparatus 800 of another embodiment includes lower and upper spindles 830a, 830b and lower and upper drive units 840a, 840b. A loading arm 820 and an unloading arm 822 are mounted to the lower main shaft 83 0 a and the upper main shaft 830b, respectively. The lower and upper drive units 840a, 840b drive the lower and upper spindles 830a, 830b, respectively. Here, both the lower and upper spindles 830a, 830b are preferably aligned with the same axis. Fig. 4 is a perspective view illustrating the configuration of a swivel plate arm. Referring to Fig. 4', a plurality of rotary plate arms 810 disposed in the substrate transfer apparatus 800 include a horseshoe end effector 8 1 2 and a plurality of support portions 8 1 4 . The end effector 820 includes an opening 8 1 3 having an open side. The edge of the substrate is positioned on the upper side of the support portions 814. An opening 8 1 3 is provided to allow the lift pins disposed within the substrate table to enter and exit. The end effector 8 1 2 has an inlet path 8 1 5 '. The end effector 212 of the atmospheric pressure transfer robot 210 enters or exits via the inlet path 815. The swivel plate arm 810 can have other forms of modification within the scope of the invention. 5A to 5E are views continuously illustrating the substrate transfer apparatus performing substrate exchange -19-200818378 • (17) operations. Referring first to FIG. 5A, as indicated by an arrow S10, in a state where the first and second substrate inlets 5 1 0, 6 1 0 are closed, when the third substrate inlet 410 is opened, the unprocessed substrate (before processing) The substrate) W1 is transferred to the substrate transfer device 800. When the transfer substrate W1 is completed, the third substrate inlet 410 is closed, and the transfer chamber 400 is converted into the same vacuum state as the inside of the first and second processing chambers 500, 600. Of course, the pump system for the vacuum state is provided in the system of this embodiment of the present invention, but it is omitted for convenience of φ. Next, as shown by an arrow S20 in Fig. 5B, when the lift pins of the plurality of support stages 520, 522, 620, 622 rise, the processed substrate W2 is lifted to a predetermined height. To accommodate this operation, the first and second substrate inlets 510, 610 are opened. At this time, the raised lift pins of the front substrate support table 520 are relatively lower in height than the lift pins of the rear substrate support tables 522, 622. Therefore, the loading arm 820 for loading/unloading does not interfere with the lift pin. φ Continuing, as shown by an arrow S30 in Fig. 5C, the loading arm 820 and the unloading arm 822 of the substrate transfer apparatus 8 are symmetrically rotated in pairs and expanded into a fan shape. At this time, the processed substrate W1 is transferred from the lift pin to the unloading arm 822. Continuing, as indicated by an arrow S40 in Fig. 5D, when the processed substrate W1 is transferred, the unloading arm 822 returns to the starting position of the transfer chamber 400. As indicated by the arrow S 50, the lift pin is again raised to receive the unprocessed substrate W2 from the loading arm 820. As indicated by arrow S60 in Figure 5E, the loading arm 820 also returns to the starting position of the transfer chamber 400. At the same time, the first and second substrate inlets 510-20-200818378. (18), 610 are again closed. As indicated by an arrow S70, the lift pins are lowered to place the unprocessed substrate W2 on the substrate supporting tables 520, 522, 620, and 622. The transfer chamber 400 is switched to the atmospheric pressure state, and the third substrate inlet 410 is opened. The atmospheric pressure transfer robot 210 of the load lock chamber 200 receives the processed substrate W1 from the unloading arm 822 and exits from the transfer chamber 400, as indicated by the arrow S 8 0 in Fig. 5E. The continuous operations S10 to S80 of the φ exchange substrate are continuously and simultaneously performed in a range in which the front work and the post work do not interfere with each other to minimize the time required to exchange the substrates. It will be appreciated that jobs S10 and S80 are performed simultaneously during repeated substrate exchange operations. In other words, the exchange of the substrate is performed between the transfer chamber 400 and the load lock chamber 200, whereby the processed substrate unloaded by the previous operation is exchanged with the pre-processed substrate to be loaded at the same time. The unloaded processed substrate W1 is transferred to the cooling chamber 300 by the atmospheric pressure transmitting robot φ 210, and is cooled to be stacked in the carrier 110. Although the cooling chambers 300 of this embodiment of the present invention are separately provided, if the transfer chamber 400 performs the function of cooling, the separated cooling chambers 300 may be omitted. In other embodiments, one of the first and second processing chambers 500, 600 can be considered a cooling chamber. For example, the first processing chamber 500 can be regarded as a plasma chamber, and the second processing chamber 600 can be regarded as a cooling chamber. In this case, the first processing chamber 500 performs the plasma processing of the substrate ' and the substrate transfer device 800 transfers the processed substrate from the first processing chamber 500 to the second processing chamber 600 for cooling. The cooled substrate can be transferred from the second processing chamber 600 to the load lock - 21 - 200818378 • (19) The chamber 200. Therefore, according to the substrate processing system of this embodiment of the present invention, in order to simultaneously process a plurality of substrates, the first and second processing chambers 500, 600 are arranged in parallel, and the transfer chamber 400 is provided in the first processing chamber 500 and the second processing chamber. Between 600. The substrate transfer device 800 is arranged to enable rapid exchange of substrates in the structure so that many substrates can be processed simultaneously and quickly. In this embodiment, a total of four substrates can be simultaneously processed and exchanged in one process in each of the two substrate φ plates in the first and second processing chambers 500, 600. The substrate processing system of the present invention can be exemplified by an alternative embodiment described below with an example of a substrate transfer apparatus using two drive shafts. Referring to Figure 6, the substrate transfer apparatus 800 can be divided into left and right portions that are independently driven. In other words, the swivel plate arm of the first process chamber 500 for transporting the substrate and the swivel plate arm of the second process chamber 600 for transporting the substrate are detachably driven. Φ As illustrated in FIG. 7A, the above-described constructed substrate transfer apparatus includes first and second spindles 830a, 83b separated from each other, and first and second drive units 840a, 840b that independently drive the first and second main axes. . Furthermore, as shown in FIG. 7B, the above-described constructed substrate transfer apparatus may include first to fourth spindles 83 0a-8 3 0d to be driven divided into upper and lower portions, and first to fourth drive units 840a-840d. . In addition, as illustrated in FIGS. 8 , 9A , 9B , in other embodiments, the substrate transfer apparatus may be modified to include four or eight spindles 8 3 0 a- 8 3 0 d (or 83 0a- 83 0h ), and Four or eight drive units 840a-840d (or 840a--22-
200818378 . (20) 840h)。因此,第一和第二處理室500、600 板的基板傳輸設備800、主軸、驅動單元可有 ,其可分離地驅動迴轉板臂,以裝載和卸載基 實施例二 圖1 〇是本發明第二實施例之基板處理系 圖,圖1 1是例示基板傳輸設備所傳輸之基板 參考圖式,本發明第二實施例之基板處理 和第一實施例相同的構造,且另包括在後側的 力傳輸機械手260之裝載鎖定室2~5Ό、和分虔 外’第四基板入口 420形成在傳輸室400和後 250。在基板處理系統中,未處理的基板裝載 已處理過的基板卸載至後側。此處的後裝載鎖 包括冷卻室3 0 0,用以冷卻基板。圖11中的衰 S 1 3 0指示基板傳輸設備一個步驟一個步驟地 的基板和已處理過的基板的流程。 圖1 2、1 3是例示本發明實施例之基板 飾例視圖。 如圖1 2所例示,第一和第二處理室5 0 0 括四個基板支撐台520-526、和620-626,且3 8〇〇可包括對應的16個迴轉板臂。另外如圖 設有第二處理室600,而無第一處理室500, 設備800可包括8個迴轉板臂。設有至少一仿 用於傳輸基 各種實施例 板。 統的平面視 流動的視圖 系統,包括 具有大氣壓 ί盤1 5 0。此 :裝載鎖定室 在前側,而 定室250可 费頭S100至 執行未處理 :理系統的修 、6 0 0分別包 ^板傳輸設備 1 3所示,只 且基板處理 i用於冷卻基 -23- 200818378 - (21) 板的冷卻室3 00,對應於待處理基板的數目。 雖然所描述之本發明的基板處理系統,在上述實施例 中包括單一層的處理室,但是可將複數處理室和傳輸室建 構成多層。在多層的構造中,設在傳輸室內基板傳輸設備 ,可獨立地或同時地被驅動。 實施例三 φ 圖1 4是例示本發明第三實施例之基板處理系統整體 構造的視圖,圖1 5是圖、4之基板處理系統的平面視圖。 參考圖1 4、1 5,本發明此實施例之基板傳輸設備包括 第一和第二處理室1 500、1 600、和設置在其間的傳輸室 1400。分度盤1100設置在裝載鎖定室1200前面,該分度 盤1100內安裝有複數載具1110。分度盤1100稱爲設備前 端模組(下文稱爲EFEM),且在某些場合係指包括裝載 鎖定室。如果需要的話,裝載鎖定室1 200可包括冷卻室 • 1 3 00,用以冷卻已處理過的基板。 裝載鎖定室1 200包括在大氣壓力下作業的大氣壓力 傳輸機械手1 2 1 0。大氣壓力傳输機械手1 2 1 0在傳輸室 1400和分度盤1100之間傳輸基板。操作大氣壓力傳輸機 械手1 2 1 0,以在載具1 1 1 0和傳輸室1 400之間傳輸基板 W。大氣壓力傳輸機械手1210被包括有雙臂構造的機械 手執行,該構造具有四個末端效應器,以從載具1 1 1 〇取 出四片基板W,並將該等基板放入傳輸室1400內。大氣 壓力傳輸機械手1210可上升和下降。一般半導體製造製 -24- 200818378 ^ (22) 程所使用的各種機械手和本發明之本實施例的雙臂型機械 手,可用做大氣壓力傳輸機械手1210。例如可使用具有各 種構造的機械手,例如具有葉片型臂且以一臂處理八片基 板W的機械手、包括有四個或更多臂的機械手、和上述 機械手的組合。 基板支撐台1 520、1 522、1 620、1 622中每二個分別 設在第一和第二處理室1 500、1 600的前端、後端、和個 φ 別路徑上。該等路徑是基板傳輸設備1 800之迴轉板臂旋 轉的路徑。 第一和第二處理室 1 5 0 0、1 6 0 0包括如真空室的電漿 源Γ70Ό,以執行預定的電漿處理製程。可建構第一和第二 處理室1 5 00、1 600,以執行各種基板處理作業。例如第一 和第二處理室1 5 00、1 600可爲用於使用電漿移除光阻劑 的灰化室、用於沉積絕簌層的化學氣相沉積(CVD )室、 用於在絕緣層飩刻孔或開口以形成互連構造的蝕刻室、用 φ 於沉積阻障層的物理氣相沉積(PVD )室、或用於沉積金 屬層的物理氣相沉積室。 由本發明之本實施例的基板處理系統所處理的基板W ,通常是用於製造半導體電路的晶圓基板、或用於製造液 晶顯示器的玻璃基板。爲了執行完整製造積體電路或晶片 所需的全部製程,可需要複數處理系統,不只本發明之本 實施例的基板處理系統而已。但是,爲了使本發明清晰, 所以省略了熟悉該項技藝者所瞭解的普通構造。 本發明之此實施例的基板處理系統包括位在中央的傳 -25- 200818378 (23) 輸室1400、及分別設在傳輸室1 400之橫向側邊的第一和 第二處理室1500、1600。至少二個基板支撐台 mo、 1522、1620、1622分別設置在第一和第二處理室1500、 1 6 0 0中。傳輸模組1 4 0 0包括基板傳輸設備1 8 〇 0。 第一基板入口 1510形成在傳輸室1400和第一處理室 15〇0之間,且第二基板入口 1610形成在傳輸室14 00和第 二處理室1600之間。第三基板入口 1410形成在傳輸室 _ 1 400和裝載鎖定室1 200之間。第一至第三基板入口 1510 、1610、1410由·間縫閥(slit valve,未示)打開或關閉 。尤其是傳輸室1400的前側1 402具有第三入口 1410向 內凹的形狀。依據此構造特徵,因爲傳輸室1 40 0的內部 區域減少了,所以維持傳輸室1 400在真空狀態所需的真 空系統尺寸也可較小。 處理則和處理後基板在傳輸室1 4 0 0內的交換,由大 氣壓力傳輸機械手1210在大氣壓力下執行,其中第一和 • 第二基板入口 1 5 1 0、1 6 1 0被關閉,且第三基板入口 1 4 1 〇 被打開。另一方面,處理前和處理後基板在第一、二處理 室1500、1 600和傳輸室1400之間的交換,由基板傳輸設 備1 800執行,且在真空狀態中進行,其中第三基板入口 141〇被關閉且第一、二基板入口 1510、1610被打開。 圖1 6是例示設置在傳輸室內之基板傳輸設備的透視 圖。圖17A至17D是分別例示基板傳輸設備之第一至第 四傳輸構件的透視圖。 參考圖15至17D,基板傳輸設備1800包括第一至第 -26- 200818378 . (24) 四傳輸構件1810a、1810b、1810c、1810d,其分散設置在 傳輸室1400的邊緣。 第一至第四傳輸構件1810a、1810b、1810c、1810d 經由第三基板入口 1 4 1 0接收四片基板至待命位置(見圖 18A),且將該四片基板傳輸至設置在第一和第二處理室 1 500、1 600 內之基板支撐台 1 520、1 522、1 620、1 622 的 上側;第一至第四傳输構件18 10a、1810b、18 10c、181 0d 並接收基板支撐台1 520、1 522、1 620、1 622上側的各基 板’以將該寺~基-板集中地傳輸至傳輸室1400之待命位置 〇 第一至第四傳輸構件1810a、1810b、1810c、1810d 中的每一者,包括用於提供旋轉力的驅動單元丨8 3 〇、連接 至驅動單元1 8 3 0的主軸1 820、和安裝在主軸1 820的二迴 轉板臂1840、1850。二迴轉板臂1840、1850可分成裝載 臂1840和卸載臂1850。在此例子中,卸載臂1850較佳是 設置成比裝載臂1 8 4 0更低。 如所例示者,基板傳輸設備1 8 0 0包括八支迴轉板臂 1 8 4 0、1 8 5 0以總共配成四對。如圖1 8 A所例示,迴轉板 臂1 840、1 8 5 0可迴轉、上升、和下降,以在待命位置和 分散位置之間運動。在該待命位置處,迴轉板臂1 8 4 0、 1 8 5 0在直立方向對齊成單一對齊線,用於從大氣壓力機械 手1210接收基板和傳輸基板至大氣壓力機械手1210。在 該分散位置處,迴轉板臂1 840、1 8 50展開在分散的基板 支撐台上。裝載臂1 840和卸載臂1 850成對地作業。 -27- 200818378 . (25) 第一傳輸構件1810a包括二迴轉板臂1840、1850,以 在待命位置裝載基板在第二處理室1600的基板支撐台 1 62 2上/從該基板支撐台1 622卸載基板。第二傳輸構件 18 10b包括二迴轉板臂1 840、1 850,以在待命位置裝載基 板在第二處理室1 600的基板支撐台1 620上/從該基板支 撐台1 62 0卸載基板。第三傳輸構件1 810c包括二迴轉板 臂1 840、1 85 0,以在待命位置裝載基板在第一處理室 φ 1 500的基板支撐台1 520上/從該基板支撐台1 520卸載基 板。第四傳輸構件1 8 10d包括二迴:轉板臂1 840、1 8 50,以 在待命位置裝載基板在第一處理室1 500的基板支撐台 1522上/從該基板支撐台1522卸載基板。 另一方面,第一至第四傳輸構件 1810a、1810 b、 18 10c、1810d具有不同的高度,以避免第一至第四傳輸構 件1810a、 1810b、 1810c、 1810d聚集在待命位置時彼此 碰撞。且第一至第四傳輸構件 1 8 1 0a、1 8 1 Ob、1 8 1 0c、 φ 1 8 1 0d可交錯或連續地配置。 雖然未顯示在圖式中,但是驅動單元1830包括用以 產生旋轉力的電動馬達和用以傳輸所產生之旋轉力至主軸 1 8 2 0的齒輪組合體,使迴轉板臂1 8 4 0、1 8 5 0執行所欲的 作業。因此,迴轉板臂1840、1850安裝在主軸1820,且 如圖15、17A-17D所例示,迴轉板臂1 840、1 850對稱地 展開和收合在傳輸室1 4〇〇的不同旋轉半徑。換言之,第 一和第四傳輸構件181〇a、181 〇d彼此對稱地迴轉,且第 二和第三傳輸構件1810b、181〇c彼此對稱地迴轉。 -28- 200818378 . (26) 如圖17A-17D所例示,第一至第四傳輸構件1810a、 1810b、1810c、1810d的迴轉板臂1 840、1 8 5 0包含馬蹄形 末端效應器1 842和複數支撐部1 844。該末端效應器1842 包括含有開放側的開口 1 843。基板的邊緣定位在該等支撐 部1 844的上側。提供開口 1 843以允許設置在基板台內的 舉升銷能進入和退出。末端效應器1 842具有入口路徑 1 845,大氣壓力傳輸機械手1210的末端效應器1212經由 φ 該入口路徑18 4 5進入或退出。迴轉板臂1840、1850可以 具有本發明之範圍的其他形式修飾。 本發明的基板處理系統可以下文的取代性實施例修飾 〇 圖19、20是例示具有可伸展板臂之傳輸構件1810a’ 範例的視圖。 參考圖19、20,迴轉板臂1 840’包括天線桿型的第一 至第三可伸展板臂1841-1、1841-2、1841-3。第一可伸展 φ 板臂1841-1是連接至主軸1820的零件,第二可伸展板臂 1841-2是從第一可伸展板臂1841-1延伸的零件,第三可 伸展板臂1841-3是從第二可伸展板臂1841-2延伸且具有 一端連接至末端效應器1 8 42的零件。 如圖20所例示,操作具有上述構造之基板傳輸設備 1 8 00的傳輸構件1810a5,使得每一迴轉板臂1 840,從傳輸 室1800a的待命位置,分別向基板支撐台1522、152 0、 1622、1620迴轉。然後,可伸展板臂1841-1、1841-2、 184卜3 —步一步地縮回,以使末端效應器1 842位在基板 -29- 200818378 . (27) 支撐台的上側。換言之,傳輸構件1 8 1 0a’以收縮可伸展板 臂1841-1、184 1-2、1841-3的狀態迴轉以減小旋轉半徑, 且伸展以使末端效應器1842位在基板支撐台。 如圖20所例示,由於此種可伸展構造,所以可縮小 基板傳輸設備1 800之傳輸構件1810a’的旋轉半徑,因此 也可減少傳輸室的整體面積。 圖18A-18D是連續例示基板傳輸設備所執行之基板交 φ 換作業的視圖。 首先參考圖18A,如箭頭S110所指示,在第---和第 二基板入口 1 5 1 0、1 6 1 0關閉的狀態中,當第三基板入口 1410打開時,未處理的基板被傳輸至基板傳輸設備1800 。當完成傳輸基板時,關閉第三基板入口 1410,且傳輸室 1400被轉換成和第一、二處理室1500、1600之內部相同 的真空狀態。當然,本發明之此實施例的系統中設置用於 真空狀態的泵系統,但是爲了方便所以省略未示。 _ 其次,當複數支撐台1 520、1 522、1 620、1622的舉 升銷(未示)上升時,已處理過的基板被舉升至預定的高 度。爲配合此作業,第一和第二基板入口 1510、1610被 打開。此時,已上升的舉升銷之高度和基板被傳輸之對應 傳輸構件的位置不同。因此,用於裝載/卸載之迴轉板臂 1 840、185〇的旋轉不會和舉升銷相干涉。 繼續地,如圖18B中的箭頭S120所指示,基板傳輸 設備1 800之第一至第四傳輸構件1810a-1810d的迴轉板 臂1 840、1 8 5 0,分別向各對應的基板支撐台的上側迴轉並 -30- 200818378 • (28) 展開。此時,已處理過的基板從舉升銷傳輸至第一至第四 傳輸構件1810a-1810d的卸載臂1 8 5 0。繼續地,如圖18C 中的箭頭S130所示,當傳輸已處理過的基板時,卸載臂 1 850回到做爲起始位置之傳輸室1400的中央待命位置。 舉升銷再度上升,以從裝載臂1 840接收未處理的基板。 如圖18D中的箭頭S140所指示者,裝載臂1840也回 到傳輸室1 400的起始位置。同時,第一和第二基板入口 φ 1 5 1 0、1 6 1 0再度關閉。舉升銷下降,以將未處理的基板放 置在基板支撐台1520、1522、1620、和1622上。 傳輸室1 400被轉換至大氣壓力狀態,且第三基板入 口 1 4 1 0被打開。如圖1 8 D中的箭頭S 1 5 0所指示者,裝載 鎖定室1 200的大氣壓力傳輸機械手1210,接收來自卸載 臂1 850之已處理過的基板,並從傳輸室1 400退出。 交換基板的連續作業S 1 1 0至S 1 5 0,是在一範圍內連 續且同時地執行,前作業和後作業在該區域內不會彼此干 φ 擾,以將交換基板所需的時間最小化。可瞭解的是,作業 S 1 1 0和S 1 5 0在重複的基板交換作業期間是同時執行。換 言之,基板的交換在傳輸室1 400和裝載鎖定室1 200之間 執行,藉此,前作業所卸載的已處理過的基板,和待同時 裝載的處理前基板相交換。 卸載的已處理過的基板被大氣壓力傳輸機械手1210 傳輸至冷卻室1300,且被冷卻以堆積在載具1110中。雖 然本發明之此實施例的冷卻室3300是分離地設置,但是 如果傳輸室1400執行冷卻的功能,則可省略分離的冷卻 -31 - 200818378 . (29) 室1300。在其他實施例中,第一和第 1 600其中之一,可當作冷卻室。例$1 1 500當作電漿室,且第二處理室1600 情況中,第一處理室1 500執行基板的 傳輸設備1 800將已處理過的基板從第-至第二處理室1 600以冷卻。已冷卻的 理室1 600傳輸至裝載鎖定室1 200。 φ 因此,依據本發明之此實施例的基 同時處理複數基板,第一和第二處理室 地配置,且傳輸室1 400設在第一處理_ 室1 600之間。設置基板傳輸設備1800 速地交換基板,以便能同時處理且快速 。在此實施例中,在第一和第二處理室 各二片基板,總共四片基板可在一個製 換。 φ 雖然所描述之本發明的基板處理系 中包括單一層的處理室,但是可將複數 構成多層。在多層的構造中,設在傳輸 ,可獨立地或同時地被驅動。 實施例四 圖21是例是本發明第四實施例之 體構造的視圖。圖22A-22C是例示基板 圖’其第一、第二、第三處理組例示在 二處理室 1 5 0 0、 ]可將第一處理室 做爲冷卻室。在此 電漿處理,且基板 -處理室1 500傳輸 基板可被從第二處 板處理系統,爲了 1500、 1600 平行 【1 500和第二處理 使能在此結構中快 地交換很多的基板 1500 ^ 1600 中的 程中同時處理和交 統,在上述實施例 處理室和傳輸室建 室內基板傳輸設備 基板處理系統的整 處理系統的平面視 圖21中。 -32- 200818378 . (30) 參考圖21至圖22C,本發明此實施例之基板處理系 統包括裝載鎖疋室2200和第一、第二、第二處理組a、b 、c。該等第一、第二、第三處理組a、b、c設置在裝載 鎖定室22 00的後側且疊積成多層式。 分度盤2100設置在裝載鎖定室2200前面,該分度盤 2100內安裝有複數載具2110。分度盤2100稱爲設備前端' 模組(下文稱-爲EFEM_),且在某些場合係指包括裝載鎖 • 定室。 裝載鎖定室2200包括在大氣壓力下作業的大氣壓力 傳輸機械手2210。大氣壓力傳輸機械手2210在分別對應 於處理組的第一、第二、第三傳輸室 2400a、2400b、 2400c和分度盤2100之間傳輸基板。大氣壓力傳輸機械手 22 10被包括有雙臂構造的機械手執行,該構造具有四個末 端效應器,以從載具2210取出四片基板W,並將該等基 板放入各層的第一、第二、第三傳輸室24 00a、24 0 0b、 φ 24 00c內。大氣壓力傳輸機械手2210可上升和下降。一般 半導體製造製程所使用的各種機械手和本發明之本實施例 的雙臂型機械手,可用做大氣壓力傳輸機械手2210。例如 可使用具有各種構造的機械手,例如具有葉片型臂且以一 臂處理八片基板W的機械手、包括有四個或更多臂的機 械手、和上述機械手的組合。 如圖21至圖2 2 C所例示,第一、第二、第三處理組 a、b、c疊積成多層式。位在第一層的第一處理組a包括 第一和第二處理室2500a、25 00b,以同時處理四片基板; -33- 200818378 . (31) 位在第二層的第二處理組b包括第一和第二對齊室2600a 、2600b,以對其未處理的基板;位在最上層的第三處理 組c包括冷卻室2700,以冷卻已處理過的基板。 因此,在本發明此實施例的基板處理系統2010中, 且在平面視圖中,對齊室設置成和冷卻室在處理室中重疊 ,使能減少基板處理系統的總底部區域。因此,可降低清 潔室的製造成本,且可在從第二傳輸室2400b傳輸基板至 φ 第一傳輸室2400a、和從第一傳輸室2400a傳輸基板至第 三傳-輸室2400c期間,消除大氣壓力機械手2210的方向 改變作業。再者,因爲傳輸距離短,所以能快速傳輸基板 〇 參考圖22 A,位在第一層的第一處理組a包括第一和 第二處理室2500a、25 00b、及設置在其間的第一傳輸室 2 4 0 0a ° 各有二個基板支撐台2 5 20、25 22分別設置在第一和 • 第二處理室2500a、2500b內的前端和後端,且在第一基 板傳輸設備2800a之迴轉板臂的各迴轉路徑上。 第一和第二處理室 25 00a、2500b包括如真空室的電 漿源(未示),以執行預定的電漿處理製程。 第一基板入口 2510a形成在第一傳輸室24〇0&和第一 處理室2500a之間,且第二基板入口 2510b形成在第一傳 輸室2400a和第二處理室2500b之間。第三基板入口 2410 形成在第一傳輸室2400a和裝載鎖定室2200之間。第一 至第三基板入口 25 1 0a、25 1 Ob、24 1 0 由間縫閥 (slit -34- 200818378 . (32) valve,未示)打開或關閉。 處理前和處理後基板在第一傳輸室2400a內的交換’ 由大氣壓力傳輸機械手2210在大氣壓力下執行,其中第 一和第二基板入口 2510a、2510b被關閉,且第三基板入 口 2410被打開。另一方面,處理前和處理後基板在第一 、二處理室2500a、2500b和第一傳輸室 2400a之間的交 換,由第一基板傳輸設備2800a執行,且在真空狀態中進 φ 行,其中第三基板入口 241 0被關閉且第一、二基板入口 2510a、2510b 被打開。200818378 . (20) 840h). Therefore, the substrate transfer apparatus 800, the main shaft, and the driving unit of the first and second processing chambers 500, 600 may have a swashable arm that is detachably driven to load and unload the base. FIG. 1 is the first aspect of the present invention. 2 is a substrate processing diagram of the second embodiment, and FIG. 11 is a substrate reference diagram illustrating a substrate transfer device. The substrate processing of the second embodiment of the present invention is the same as that of the first embodiment, and is further included on the rear side. The load lock chamber 2~5Ό of the force transfer robot 260 and the fourth substrate inlet 420 are formed in the transfer chamber 400 and the rear 250. In the substrate processing system, the unprocessed substrate is loaded and the processed substrate is unloaded to the back side. The rear load lock here includes a cooling chamber 300 for cooling the substrate. The fading S 1 3 0 in Fig. 11 indicates the flow of the substrate and the processed substrate in one step of the substrate transfer apparatus. 1 and 2 are views showing a substrate decoration example of an embodiment of the present invention. As illustrated in FIG. 12, the first and second processing chambers 500 include four substrate support stages 520-526, and 620-626, and the 38's may include corresponding 16 rotary plate arms. Further, as shown in Fig. 2, there is a second processing chamber 600, and without the first processing chamber 500, the apparatus 800 can include eight rotating plate arms. At least one of the various embodiment boards is provided for the transmission base. The system view of the flow view system, including the atmospheric pressure ί disk 1 50. This: the load lock chamber is on the front side, and the fixed chamber 250 can take the head S100 to perform the unprocessed: the repair of the system, the 600 board transmission device 13 is shown, and the substrate processing i is used for the cooling base - 23- 200818378 - (21) The cooling chamber 300 of the board corresponds to the number of substrates to be processed. Although the substrate processing system of the present invention is described as including a single layer processing chamber in the above embodiment, the plurality of processing chambers and the transfer chamber may be constructed in multiple layers. In a multi-layered configuration, the substrate transfer device disposed within the transfer chamber can be driven independently or simultaneously. [Embodiment 3] Fig. 14 is a view showing an overall configuration of a substrate processing system according to a third embodiment of the present invention, and Fig. 15 is a plan view of the substrate processing system of Figs. Referring to Figures 14 and 15, the substrate transfer apparatus of this embodiment of the present invention includes first and second processing chambers 1500, 1 600, and a transfer chamber 1400 disposed therebetween. The indexing plate 1100 is disposed in front of the load lock chamber 1200, and the plurality of carriers 1110 are mounted in the index plate 1100. The indexing disk 1100 is referred to as a device front module (hereinafter referred to as EFEM) and, in some instances, includes a load lock chamber. If desired, the load lock chamber 1 200 can include a cooling chamber • 1 300 to cool the processed substrate. The load lock chamber 1 200 includes an atmospheric pressure transfer robot 1 2 1 0 operating at atmospheric pressure. The atmospheric pressure transfer robot 1 2 1 0 transfers the substrate between the transfer chamber 1400 and the indexing plate 1100. The atmospheric pressure transfer robot 1 2 1 0 is operated to transfer the substrate W between the carrier 1 1 1 0 and the transfer chamber 1 400. The atmospheric pressure transfer robot 1210 is executed by a robot including a two-arm configuration having four end effectors for taking out four substrates W from the carrier 1 1 1 , and placing the substrates in the transfer chamber 1400 Inside. The atmospheric pressure transmission robot 1210 can rise and fall. General Semiconductor Manufacturing System -24- 200818378 ^ (22) The various manipulators used in the process and the dual-arm type manipulator of the present embodiment of the present invention can be used as the atmospheric pressure transmission robot 1210. For example, a robot having various configurations such as a robot having a blade type arm and processing eight base plates W with one arm, a robot including four or more arms, and a combination of the above-described robots can be used. Each of the substrate support stages 1 520, 1 522, 1 620, 1 622 is disposed on the front end, the rear end, and the φ path of the first and second processing chambers 1500, 1 600, respectively. These paths are paths in which the swivel plate arms of the substrate transport apparatus 1 800 are rotated. The first and second processing chambers 1 500, 1 600 include a plasma source 70 such as a vacuum chamber to perform a predetermined plasma processing process. The first and second processing chambers 1 00, 1 600 can be constructed to perform various substrate processing operations. For example, the first and second processing chambers 1 500, 1 600 may be an ashing chamber for removing photoresist using plasma, a chemical vapor deposition (CVD) chamber for depositing an insulating layer, for The insulating layer engraves the opening or opening to form an etch chamber of the interconnect structure, a physical vapor deposition (PVD) chamber for depositing the barrier layer, or a physical vapor deposition chamber for depositing the metal layer. The substrate W processed by the substrate processing system of the present embodiment of the present invention is generally a wafer substrate for manufacturing a semiconductor circuit or a glass substrate for manufacturing a liquid crystal display. In order to perform all the processes required to completely fabricate an integrated circuit or wafer, a complex processing system may be required, not only the substrate processing system of the present embodiment of the present invention. However, in order to clarify the invention, the ordinary constructions known to those skilled in the art are omitted. The substrate processing system of this embodiment of the present invention includes a centrally located -25-200818378 (23) transfer chamber 1400, and first and second processing chambers 1500, 1600 respectively disposed on lateral sides of the transfer chamber 1 400. . At least two substrate support tables mo, 1522, 1620, 1622 are disposed in the first and second processing chambers 1500, 160, respectively. The transmission module 1400 includes a substrate transfer device 1 8 〇 0. A first substrate inlet 1510 is formed between the transfer chamber 1400 and the first process chamber 15A, and a second substrate inlet 1610 is formed between the transfer chamber 14 00 and the second process chamber 1600. A third substrate inlet 1410 is formed between the transfer chamber _ 1 400 and the load lock chamber 1 200. The first to third substrate inlets 1510, 1610, 1410 are opened or closed by a slit valve (not shown). In particular, the front side 1 402 of the transfer chamber 1400 has a shape in which the third inlet 1410 is concave. According to this configuration feature, since the inner area of the transfer chamber 140 is reduced, the size of the vacuum system required to maintain the transfer chamber 1 400 in a vacuum state can be small. The process and the exchange of the processed substrate in the transfer chamber 1400 are performed by the atmospheric pressure transfer robot 1210 under atmospheric pressure, wherein the first and second substrate inlets 1 5 1 0, 1 6 1 0 are turned off. And the third substrate inlet 1 4 1 〇 is opened. On the other hand, the exchange of the substrate between the first and second processing chambers 1500, 1 600 and the transfer chamber 1400 before and after the processing is performed by the substrate transfer apparatus 1 800 and is performed in a vacuum state in which the third substrate is introduced. The 141 turns are closed and the first and second substrate inlets 1510, 1610 are opened. Fig. 16 is a perspective view illustrating a substrate transfer apparatus disposed in a transfer chamber. 17A to 17D are perspective views respectively illustrating first to fourth transfer members of the substrate transfer apparatus. Referring to Figs. 15 through 17D, the substrate transfer apparatus 1800 includes first to -26-200818378. (24) Four transfer members 1810a, 1810b, 1810c, 1810d which are dispersedly disposed at the edge of the transfer chamber 1400. The first to fourth transfer members 1810a, 1810b, 1810c, 1810d receive four substrates to the standby position via the third substrate inlet 1 4 10 (see FIG. 18A), and transmit the four substrates to the first and the first The upper sides of the substrate support stages 1 520, 1 522, 1 620, 1 622 in the two processing chambers 1500, 1 600; the first to fourth transfer members 18 10a, 1810b, 18 10c, 181 0d and receiving the substrate support table Each of the substrates on the upper side of 1 520, 1 522, 1 620, 1 622 is collectively transmitted to the standby position 〇 first to fourth transmission members 1810a, 1810b, 1810c, 1810d of the transfer chamber 1400. Each of them includes a drive unit 丨 8 3 用于 for providing a rotational force, a spindle 1 820 connected to the drive unit 1 8 3 0 , and two rotary plate arms 1840, 1850 mounted on the spindle 1 820. The two swivel arms 1840, 1850 can be divided into a loading arm 1840 and an unloading arm 1850. In this example, the unloading arm 1850 is preferably positioned lower than the loading arm 1840. As exemplified, the substrate transfer device 1 800 includes eight rotary plate arms 1 8 4 0, 1 8 5 0 for a total of four pairs. As illustrated in Figure 18A, the swivel plate arms 1 840, 1 8 50 can be swung, raised, and lowered to move between the standby position and the distracted position. At the standby position, the swivel plate arms 1 8 4 0, 1 8 5 0 are aligned in the upright direction into a single alignment line for receiving the substrate and transport substrate from the atmospheric pressure robot 1210 to the atmospheric pressure robot 1210. At the dispersed position, the swivel plate arms 1 840, 1 8 50 are unfolded on the dispersed substrate support table. The loading arm 1 840 and the unloading arm 1 850 operate in pairs. -27- 200818378 . (25) The first transfer member 1810a includes two swivel plate arms 1840, 1850 for loading the substrate on the substrate support table 1 62 2 of the second process chamber 1600 at the standby position/from the substrate support table 1 622 Unload the substrate. The second transfer member 18 10b includes two swivel plate arms 1 840, 1 850 for loading the substrate on/from the substrate support table 1 620 of the second process chamber 1 600 at the standby position. The third transfer member 1 810c includes two revolving plate arms 1 840, 180 0 to load the substrate on/from the substrate support table 1 520 of the first process chamber φ 1 500 at the standby position. The fourth transfer member 18 8d includes two turns: the flap arms 1 840, 1 8 50 to load the substrate on/from the substrate support table 1522 of the first process chamber 1500 at the standby position. On the other hand, the first to fourth transfer members 1810a, 1810 b, 18 10c, 1810d have different heights to prevent the first to fourth transfer members 1810a, 1810b, 1810c, 1810d from colliding with each other when they are gathered at the standby position. And the first to fourth transmission members 1 8 1 0a, 1 8 1 Ob, 1 8 1 0c, φ 1 8 1 0d may be alternately or continuously arranged. Although not shown in the drawings, the drive unit 1830 includes an electric motor for generating a rotational force and a gear assembly for transmitting the generated rotational force to the main shaft 1 8 2 0, so that the rotary plate arm 1 8 4 0, 1 8 5 0 Execute the desired job. Accordingly, the swivel plate arms 1840, 1850 are mounted to the main shaft 1820, and as illustrated in Figures 15, 17A-17D, the swivel plate arms 1 840, 1 850 are symmetrically unfolded and collapsed at different rotational radii of the transfer chamber 14 〇〇. In other words, the first and fourth transfer members 181a, 181, 〇d are rotated symmetrically with each other, and the second and third transfer members 1810b, 181c are rotated symmetrically with each other. -28- 200818378. (26) As illustrated in Figures 17A-17D, the swivel plate arms 1 840, 1 8 50 of the first to fourth transfer members 1810a, 1810b, 1810c, 1810d comprise a horseshoe end effector 1 842 and a plurality Support portion 1 844. The end effector 1842 includes an opening 1 843 having an open side. The edges of the substrate are positioned on the upper side of the support portions 1 844. An opening 1 843 is provided to allow the lift pins disposed within the substrate table to enter and exit. The end effector 1 842 has an inlet path 1 845 to which the end effector 1212 of the atmospheric pressure transfer robot 1210 enters or exits via φ. The swivel plate arms 1840, 1850 can have other forms of modification within the scope of the invention. The substrate processing system of the present invention can be modified by the following alternative embodiments. Figures 19, 20 are views illustrating an example of a transfer member 1810a' having an extendable plate arm. Referring to Figures 19 and 20, the swivel plate arm 1 840' includes first to third extendable plate arms 1841-1, 1841-2, 1841-3 of the antenna mast type. The first extendable φ plate arm 1841-1 is a part that is coupled to the main shaft 1820, the second extendable plate arm 1841-2 is a part that extends from the first extendable plate arm 1841-1, and the third extendable plate arm 1841- 3 is a part that extends from the second extendable plate arm 1841-2 and has one end connected to the end effector 1 8 42. As illustrated in Fig. 20, the transfer member 1810a5 having the above-described substrate transfer apparatus 1 800 is operated such that each of the swivel plate arms 1 840, from the standby position of the transfer chamber 1800a, to the substrate support table 1522, 152 0, 1622, respectively , 1620 revolution. Then, the extendable plate arms 1841-1, 1841-2, 184 are retracted step by step so that the end effector 1 842 is positioned on the substrate -29-200818378. (27) The upper side of the support table. In other words, the transfer member 18 1 0a' is swung in a state of contracting the extendable plate arms 1841-1, 184 1-2, 1841-3 to reduce the radius of rotation, and is stretched so that the end effector 1842 is positioned on the substrate support table. As exemplified in Fig. 20, due to such an extendable configuration, the radius of rotation of the transport member 1810a' of the substrate transport apparatus 1 800 can be reduced, so that the overall area of the transport chamber can also be reduced. 18A-18D are views for continuously exemplifying a substrate transfer operation performed by a substrate transfer apparatus. Referring first to FIG. 18A, as indicated by an arrow S110, in a state where the first and second substrate inlets 1 5 1 0, 1 6 1 0 are closed, when the third substrate inlet 1410 is opened, the unprocessed substrate is transferred. To the substrate transfer device 1800. When the transfer of the substrate is completed, the third substrate inlet 1410 is closed, and the transfer chamber 1400 is converted into the same vacuum state as the inside of the first and second processing chambers 1500, 1600. Of course, the pump system for the vacuum state is provided in the system of this embodiment of the invention, but is omitted for convenience. _ Next, when the lift pins (not shown) of the plurality of support tables 1 520, 1 522, 1 620, 1622 rise, the processed substrate is lifted to a predetermined height. To cooperate with this operation, the first and second substrate inlets 1510, 1610 are opened. At this time, the height of the raised lift pin is different from the position of the corresponding transfer member to which the substrate is transported. Therefore, the rotation of the swivel plate arms 1 840, 185 用于 for loading/unloading does not interfere with the lift pins. Continuing, as indicated by an arrow S120 in FIG. 18B, the swivel plate arms 1 840, 1 8 50 of the first to fourth transfer members 1810a-1810d of the substrate transfer apparatus 1 800 are respectively directed to the respective substrate support tables. The upper side turns and -30- 200818378 • (28) Expand. At this time, the processed substrate is transferred from the lift pins to the unloading arms 1 8 5 0 of the first to fourth transfer members 1810a to 1810d. Continuing, as indicated by arrow S130 in Fig. 18C, when the processed substrate is transferred, the unloading arm 1 850 returns to the central standby position of the transfer chamber 1400 as the starting position. The lift pin is again raised to receive the unprocessed substrate from the loading arm 1 840. As indicated by arrow S140 in Figure 18D, the loading arm 1840 also returns to the starting position of the transfer chamber 1 400. At the same time, the first and second substrate inlets φ 1 5 1 0, 1 6 1 0 are again turned off. The lift pins are lowered to place the unprocessed substrates on the substrate support tables 1520, 1522, 1620, and 1622. The transfer chamber 1 400 is switched to the atmospheric pressure state, and the third substrate inlet 1 4 1 0 is opened. The atmospheric pressure transfer robot 1210, which is loaded with the lock chamber 1 200, receives the processed substrate from the unloading arm 1 850 and exits from the transfer chamber 1 400, as indicated by the arrow S 1 50 in Fig. 18D. The continuous operations S 1 1 0 to S 1 50 of the exchange substrate are performed continuously and simultaneously in a range, and the front work and the post work do not interfere with each other in the area to exchange the time required for the substrate. minimize. It will be appreciated that jobs S 1 1 0 and S 1 50 are simultaneously executed during repeated substrate exchange operations. In other words, the exchange of the substrates is performed between the transfer chamber 1 400 and the load lock chamber 1 200, whereby the processed substrates unloaded by the previous operations are exchanged with the pre-process substrates to be simultaneously loaded. The unloaded processed substrate is transferred to the cooling chamber 1300 by the atmospheric pressure transfer robot 1210 and cooled to be stacked in the carrier 1110. Although the cooling chamber 3300 of this embodiment of the present invention is separately provided, if the transfer chamber 1400 performs the function of cooling, the separate cooling - 31 - 200818378 may be omitted. (29) The chamber 1300. In other embodiments, one of the first and first 600 can be considered a cooling chamber. Example $1 1 500 is taken as a plasma chamber, and in the case of the second processing chamber 1600, the first processing chamber 1500 performs the substrate transfer device 1 800 to cool the processed substrate from the first to the second processing chamber 1 600 . The cooled chamber 1 600 is transferred to the load lock chamber 1 200. φ Therefore, the plurality of substrates are simultaneously processed in accordance with the embodiment of the present invention, the first and second processing chambers are disposed, and the transfer chamber 1 400 is disposed between the first processing chambers 1 600. The substrate transfer device is set to 1800 to exchange substrates quickly so that they can be processed simultaneously and quickly. In this embodiment, two substrates are provided in each of the first and second processing chambers, and a total of four substrates can be replaced at one. φ Although the substrate processing system of the present invention described includes a single layer processing chamber, the plural may be formed into a plurality of layers. In a multi-layer construction, it is provided in transmission, which can be driven independently or simultaneously. Fourth Embodiment Fig. 21 is a view showing a configuration of a body of a fourth embodiment of the present invention. 22A-22C are diagrams illustrating a substrate diagram in which the first, second, and third processing groups are exemplified in the second processing chamber 1 500, and the first processing chamber can be used as a cooling chamber. In this plasma processing, and the substrate-processing chamber 1500 transfer substrate can be exchanged from the second plate processing system for 1500, 1600 parallel [1500 and second processing enables quick exchange of many substrates 1500 in this structure ^ 1600 in the process of simultaneous processing and communication, in the processing chamber and transmission chamber of the above embodiment, the plan view 21 of the whole processing system of the indoor substrate transfer device substrate processing system. -32- 200818378. (30) Referring to Figures 21 through 22C, the substrate processing system of this embodiment of the present invention includes a load lock chamber 2200 and first, second, and second processing groups a, b, c. The first, second, and third process groups a, b, and c are disposed on the rear side of the load lock chamber 22 00 and are stacked in a multi-layered manner. The indexing plate 2100 is disposed in front of the load lock chamber 2200, and the plurality of carriers 2110 are mounted in the index plate 2100. The indexing plate 2100 is referred to as a device front end module (hereinafter referred to as EFEM_), and in some cases is meant to include a load lock chamber. The load lock chamber 2200 includes an atmospheric pressure transfer robot 2210 that operates at atmospheric pressure. The atmospheric pressure transmitting robot 2210 transfers the substrate between the first, second, and third transfer chambers 2400a, 2400b, 2400c and the indexing disk 2100 respectively corresponding to the processing group. The atmospheric pressure transfer robot 22 10 is executed by a robot including a double arm configuration having four end effectors for taking out four substrates W from the carrier 2210 and placing the substrates into the first layers of the layers, The second and third transfer chambers 24 00a, 24 0 0b, and φ 24 00c. The atmospheric pressure transmission robot 2210 can ascend and descend. The various manipulators used in the general semiconductor manufacturing process and the dual-arm type manipulator of the present embodiment of the present invention can be used as the atmospheric pressure transmitting robot 2210. For example, a robot having various configurations such as a robot having a blade type arm and processing eight substrates W with one arm, a robot including four or more arms, and a combination of the above-described robots can be used. As illustrated in Fig. 21 to Fig. 2C, the first, second, and third processing groups a, b, and c are stacked in a multi-layered manner. The first processing group a located in the first layer includes first and second processing chambers 2500a, 25 00b to simultaneously process four substrates; -33- 200818378. (31) Second processing group b in the second layer The first and second alignment chambers 2600a, 2600b are included for the unprocessed substrate; the third processing group c positioned at the uppermost layer includes a cooling chamber 2700 to cool the processed substrate. Thus, in the substrate processing system 2010 of this embodiment of the invention, and in plan view, the alignment chamber is arranged to overlap the cooling chamber in the processing chamber, enabling a reduction in the overall bottom region of the substrate processing system. Therefore, the manufacturing cost of the clean room can be reduced, and the atmospheric pressure can be eliminated during the transfer of the substrate from the second transfer chamber 2400b to the φ first transfer chamber 2400a and the transfer of the substrate from the first transfer chamber 2400a to the third transfer-transfer chamber 2400c. The direction of the force manipulator 2210 changes the operation. Furthermore, since the transmission distance is short, the substrate can be quickly transferred. Referring to FIG. 22A, the first processing group a in the first layer includes the first and second processing chambers 2500a, 2500b, and the first disposed therebetween. The transfer chamber 2400° each has two substrate support stations 2 5 20, 25 22 disposed at the front end and the rear end of the first and second processing chambers 2500a, 2500b, respectively, and at the first substrate transfer device 2800a On each revolution path of the swivel plate arm. The first and second processing chambers 25 00a, 2500b include a plasma source (not shown) such as a vacuum chamber to perform a predetermined plasma processing process. The first substrate inlet 2510a is formed between the first transfer chamber 24A and the first processing chamber 2500a, and the second substrate inlet 2510b is formed between the first transfer chamber 2400a and the second processing chamber 2500b. The third substrate inlet 2410 is formed between the first transfer chamber 2400a and the load lock chamber 2200. The first to third substrate inlets 25 1 0a, 25 1 Ob, and 24 1 0 are opened or closed by a slit valve (slit - 34 - 200818378 . (32) valve, not shown). The exchange of the substrate in the first transfer chamber 2400a before and after the treatment is performed by the atmospheric pressure transfer robot 2210 under atmospheric pressure, wherein the first and second substrate inlets 2510a, 2510b are closed, and the third substrate inlet 2410 is turn on. On the other hand, the exchange between the first and second processing chambers 2500a, 2500b and the first transfer chamber 2400a before and after the processing is performed by the first substrate transfer device 2800a, and φ is performed in a vacuum state, wherein The third substrate inlet 241 0 is closed and the first and second substrate inlets 2510a, 2510b are opened.
可建構第一和第二處理室2500a、2500b,以執行各種 基板處理作業。例如第一和第二處理室5 00、600可爲用 於使用電漿移除光阻劑的灰化室、用於沉積絕緣層的化學 氣相沉積(CVD )室、用於在絕緣層蝕刻孔或開口以形成 互連構造的蝕刻室、用於沉積阻障層的物理氣相沉積( PVD)室、或用於沉積金屬層的物理氣相沉積室。 φ 由本發明之本實施例的基板處理系統所處理的基板W ,通常是用於製造半導體電路的晶圓基板、或用於製造液 晶顯示器的玻璃基板。爲了執行完整製造積體電路或晶片 所需的全部製程,可需要複數處理系統,不只本發明之本 實施例的基板處理系統而已。但是,爲了使本發明清晰, 所以省略了熟悉該項技藝者所瞭解的普通構造。 參考圖22B、26,位在第二層的第二處理組b包括第 一和第二對齊室2600a、2600b、及設置在其間的第二傳輸 室 2400b ° -35- 200818378 ^ (33) 第一和第二對齊室2600a、2600b分別包括一個旋轉 夾頭,其設置在第二基板傳輸設備2800b之迴轉板臂的各 迴轉路徑上。 第一和第二對齊室2600a、2600b是對齊第一、二處 理室25 00a、25 00b內處理前基板的腔室。且第一和第二 對齊室2600a、260 0b包括具有旋轉夾頭2640的基板對齊 器、偵測單元(即感應器)2650、和用以依據迴轉板臂的 φ 高度調整旋轉夾頭2640高度的升降器2660。可建構基板 對齊器成當基板放在旋轉夾頭2640上,使得設在备板上 側的偵測單元2650檢測到基板的位置時,基板對齊器會 迴轉旋轉夾頭2640。此處的偵測單元2650包括電荷耦合 元件(CCD )和對應的光源,且用於偵測基板的位置。另 一方面,如圖26所示,依據第一、第二迴轉板臂的位置 ,第一對齊室2600b的旋轉夾頭2640設置成比第二對齊 室2 6 0 0 a的旋轉夾頭2 6 4 0的位置還低。 φ 第一基板入口 2010a形成在第一傳輸室2400a和第一 對齊室2600a之間,且第二基板入口 2610b形成在第二傳 輸室24 00b和第二對齊室2600b之間。第三基板入口 2412 形成在第二傳輸室2400b和裝載鎖定室2200之間。第一 至第三基板入口 2610a、2610b、2412由間縫閥(slit valve,未示)打開或關閉。 參考圖22C,位在最上層的第三處理組c包括對齊於 第二傳輸室2400b的第三傳輸室2400c、和設在其側邊的 冷卻室 2700。第一基板入口 2710形成在第三傳輸室 -36- 200818378 ^ (34) 2400c和冷卻室2700之間,且第三基板入口 2414形成在 第三傳輸室2400c和裝載鎖定室2200之間。第一和第三 基板入口 2710、2414由間縫閥(slit valve,未示)打開 或關閉。 因已瞭解而不必詳述,冷卻室2700是用於冷卻第一 和第二處理室已處理過之四個基板的腔室。冷卻室必須包 括冷卻工作台,供放置該四個基板。冷卻室可進一步包括 φ 冷卻氣體供給器,以供給冷卻空氣至基板。因爲冷卻基板 的結構和方法屬習知,且爲熟悉該項技藝人士所已知,因 此省略該結構和方法。 圖23A至圖23C是設在第一、第二、和第三傳輸室內 之第一、第二、和第三基板傳輸設備的透視圖。 首先,參考圖23A,第一基板傳輸設備2800a包括用 以提供旋轉力的驅動單元2840、連接至驅動單元2840單 一主軸2 830、和安裝在主軸2830的八個迴轉板臂2810。 φ 該八個迴轉板臂2 8 1 0包括複數第一迴轉板臂和複數 第二迴轉板臂。該等第一迴轉板臂用以將基板裝載在第一 處理室2500a上、或從第一處理室2500a—卸載基板;該等 第二迴轉板臂用以將基板裝載在第二處理室2500b上、或 從第二處理室25 00b卸載基板。第一和第二迴轉板臂交替 地配置。但是第一和第二迴轉板臂可連續地配置。複數的 迴轉板臂2810可分成裝載臂2820和卸載臂2822。在此案 例中’卸載臂2822較佳是配置成比裝載臂2820低。裝載 臂2 820和卸載臂2822配成對,且在如圖所示的實施例中 -37- 200818378 . (35) ,設置八個迴轉板臂配成四對。如圖22A所例示’複數迴 轉板臂2810展開成扇形,且可迴轉、上升、和下降。裝 載臂2820和卸載臂2822配成對供操作。 雖然未顯示在圖式中,但是驅動單元2840包括用以 產生旋轉力的電動馬達和用以傳輸所產生之旋轉力至主軸 2830的齒輪組合體,使複數迴轉板臂2810執行所欲的作 業。因此,複數迴轉板臂2810安裝在主軸^ 283 0,且如圖 φ 22A所例示,該等迴轉板臂2810對稱地展開成扇形,且 收合在第一傳輸室2 4 0 0 a的不同旋轉半徑。 雖然本發明的基板處理系統被描述成包括單一主軸, 但是該基板處理系統可包括設置在該主軸橫向側的複數主 軸。 圖23B是例示設在第二傳輸室內之第二基板傳輸設備 的透視圖。 參考圖23B,第二基板傳輸設備2800b像第一基板傳 φ 輸設備2800a,其包括用以提供旋轉力的驅動單元2840、 連接至驅動單元2840單一主軸2830、和安裝在主軸2830 的四個迴轉板臂2 8 1 0。第二基板傳輸設備2 8 00b可包括複 數驅動單元和分別連接至各驅動單元的的主軸,使得該四 個迴轉板臂2 8 1 0可獨立地迴轉。 該四個迴轉板臂2810包括兩個第一迴轉板臂和二個 第二迴轉板臂。該等第一迴轉板臂設置在下側,用以將基 板裝載在第一對齊室26 00a上、或從第一對齊室2 600a卸 載基板;該等第二迴轉板臂用以將基板裝載在第二對齊室 -38- 200818378 . (36) 2 600b上、或從第二對齊室2600b卸載基板。第一和第二 迴轉板臂連續地配置。但是第一和第二迴轉板臂可交替地 配置。如圖2 6所例示,依據第一和第二迴轉板臂的位置 ,第一對齊室2600b的旋轉夾頭2640設置成比第二對齊 室2600a的旋轉夾頭2640還低。 圖23C是例τικ設在桌二傳輸室內之第二基板傳輸設備 的透視圖。參考圖23 C,第三基板傳輸設備2800c像第— • 基板傳輸設備2 8 0 0 a,其包括用以提供旋轉力的驅動單元 2840、連—接至驅動單元2840單一主軸2830、和安裝在主 軸2830的四個迺轉板臂2810。該四個迴轉板臂2810用以 將基板裝載在冷卻室2 7 〇 〇上、或從冷卻室2 7 0 0卸載基板 〇 雖然沒有顯示在圖中,但是第一基板傳輸設備可包括 上、下主軸及用以驅動該上、下主軸的驅動單元。其中, 裝載臂2820和卸載臂2822分別安裝至該上主軸和下主軸 Φ ,且該驅動單元具有上驅動單元和下驅動單元。 圖24是例示單一迴轉板臂構造的透視圖。 參考圖24,設置在第一、第二、第三基板傳輸設備 2800a、2800b、2800c內的複數迴轉板臂2810包含馬蹄形 末端效應器2812和複數支撐部2814。該末端效應器2812 包括含有開放側的開口 2 8 1 3。基板的邊緣定位在該等支撐 部28 14的上側。提供開口 2813以允許設置在基板台內的 舉升銷能進入和退出。末端效應器28 1 2具有入口路徑 2815,大氣壓力傳輸機械手210的末端效應器2212經由 -39- 200818378 , (37) 該入口路徑2815進入或退出。迴轉板臂2810可以具有本 發明之範圍的其他形式修飾。 圖25A至25E是連續地例示第一基板傳輸設備執行基 板交換作業的視圖。 首先參考圖25A,如箭頭S210所指示者,在第一和 第二基板入口 2510a、2510b關閉的狀態中,當第三基板 入口 24 1Ό打開時,未處理的基板W2被傳輸至基板傳輸 φ 設備2800a。當完成傳輸基板W2時,關閉第三基板入口 2410,且第一傳輸室2400a被轉换成和第一、二處理室 25 0 0a、25 00b之內部相同的真空狀態。當然,本發明之此 實施例的系統中設置用於真空狀態的泵系統,但是爲了方 便所以省略未示。 其次,如圖25B中的箭頭S220所示,當複數支撐台 2520、2 522的舉升銷上升時,已處理過的基板W1被舉升 至預定的高度。爲配合此作業,第一和第二基板入口 φ 2510a、2510b被打開。此時,前基板支撐台2520之已上 升的舉升銷,其高度比後基板支撐台2522之舉升銷的高 度相對地低。因此,用於裝載/卸載的裝載臂2820,其旋 轉不會和舉升銷相干涉。 繼續地,如圖25C中的箭頭S23 0所示,基板傳輸設 備2 8 0 0 a的裝載臂2 8 2 0和卸載臂2 8 2 2,成對地對稱迴轉 ,並展開成扇形。此時,已處理過的基板W 1從舉升銷傳 輸至卸載臂2822。繼續地,如圖25D中的箭頭S240所示 ,當傳輸已處理過的基板W1時,卸載.臂2822回到第一 -40- 200818378 . (38) 傳輸室2400a的起始位置。如箭頭S2 5 0所示,舉升銷再 度上升,以從裝載臂2820接收未處理的基板W2。 如圖25E中的箭頭S260所指示者,裝載臂2820也回 到第一傳輸室2400a的起始位置。同時,第一和第二基板 入口 25 10、25 10b再度關閉。如箭頭S2 70所示,舉升銷 下降,以將未處理的基板W2放置在基板支撐台2520、 2522 上 〇 φ 第一傳輸室2400a被轉換至大氣壓力狀態,且第三基 板入口 2410.被打開。如圖25E中的箭頭S280所指示者, 裝載鎖定室2200的大氣壓力傳輸機械手2210,接收來自 卸載臂2822之已處理過的基板 W1,並從第一傳輸室 2400a退出。 交換基板的連續作業S210至S280,是在一範圍內連 續且同時地執行,前作業和後作業在該區域內不會彼此干 擾,以將交換基板所需的時間最小化。可瞭解的是,作業 φ S210和S280在重複的基板交換作業期間是同時執行。換 言之,基板的交換在第一傳輸室2400a和裝載鎖定室2200 之間執行,藉此,前作業所卸載的已處理過的基板,和待 同時裝載的處理前基板相交換。 圖27A至27C是連續地例示第二基板傳輸設備執行基 板交換作業的視圖。 首先參考圖27A,如箭頭S210所指示者,當第三基 板入口 2412打開時,未處理的基板W1被傳輸至基板傳 輸設備28 00b。當完成基板的傳輸時,第三基板入口 2412 -41 - 200818378 (39) 被關閉,且同時地,第一和第二基板入口 2610a、2610b 被打開。繼續地,如圖27B中的箭頭S220所指示者,第 二基板傳輸設備2800b的其中一個第一迴轉板臂和其中一 個第二迴轉板臂,對稱地迴轉且展開,以將基板W 1放置 在對應的旋轉夾頭2640上。且如圖27C中的箭頭S230所 指示地回到起始位置。當在第一和第二對齊室2600a、 2 6 00b中的基板完成對齊時,以類似上述作業執行其餘二 φ 個基板的對齊。當完成四個基板的二次對齊時,以大氣壓 力傳輸機械手2210,將已對齊的基板從第二傳輸室2400b 傳輸至第一傳輸室2400a。 大氣壓力傳輸機械手2210可在從第二傳輸室2400b 取出基板後立刻調整高度,而將基板從第二傳輸室2400b 傳輸至第一傳輸室2400a。換言之,因爲第一、二傳輸室 2800a、2800b的第三基板入口 2410、2420彼此對齊,所 以大氣壓力傳輸機械手22 1 0可快速地將基板從第二傳輸 φ 室2400b傳輸至第一傳輸室2400a,而不必改變方向。 其間,藉由大氣壓力傳輸機械手22 1 0,將在第一、第 二處理室2500a、2500b處理過的基板傳輸至第三傳輸室 2400c。在此作業中,大氣壓力傳輸機械手2210,可快速 地將基板從第一傳輸室2400a傳輸至第三傳輸室2400c, 而不必改變方向。基板被設在傳輸室2400c內的第三基板 傳輸設備2800c傳輸至冷卻室2700,並在冷卻室2700內 被冷郤。且基板被大氣壓力傳輸機械手2210取出並堆積 在載具2 1 0 0內。 -42- 200818378 ^ (40) 在此實施例中,因爲第一和第二處理室2500a、2500b 同時處理四個基板W,所以在冷卻室2700內有24個基板 W同時被冷卻。但是,用於冷卻基板的時間可比處理基板 所需的時間更長。在此情況,因爲考慮整體效率’所以可 將冷卻室2700設置在第三傳輸室2400c的橫向側。 基板處理系統可被下述的替換性實施例所修飾。 圖28是例示第一對齊室2600c和第二货齊-室2600d φ 分別對齊基板的視圖。如圖28所例示,類似第一和第二 處理室2500a、2500b,可建構第一和第二對齊室2600c、 2600d使得二個基板對齊在一個腔室內。 W 29是例示修飾第二處理組的前剖視圖。如圖29所 例示,在修飾過的第二處理組b’中,第一和第二對齊室 2600a、2600b其中任一者,被冷卻室2 7 0 0取代。當使用 第二處理組b’時,可省略第三處理組。 如圖29所例示,因爲用於對齊基板的時間很短,所 φ 以較佳是以冷卻室取代一個腔室。在此情況中,第二和第 二基板基板傳輸設備2800d、2800e必須設在第二傳輸室 2400b內。換言之,第二上基板傳輸設備2800d用於傳輸 待對齊的基板,第三下基板傳輸設備2 800e用於傳輸待冷 卻的基板。在此,因爲第二基板傳輸設備2800d —次傳輸 一個基板,所以驅動單元較佳是獨立地驅動迴轉板臂以傳 輸基板。 如圖3 0所示,本發明此實施例的基板處理系統可包 括單一冷卻室2700。藉由移除第三處理組c,冷卻室2700 -43 - 200818378 (41) 設置在第二處理組b的上側。冷卻室2700可包括工作台 ,四個基板同時放在工作台。且四個基板藉由大氣壓力傳 輸機械手22 10直接裝載在冷卻室2700內。 實施例五 圖3 1是例示本發明第五實施例之基板處理系統的平 面圖。 參考圖3 1,本發明此實施例的基板處理系統包括第一 和第二處理室 3 40 0、3 4 1 0、設置在第一、第二處理室 3400、3410之間的傳輸室3300、和設置在傳輸室3300前 方的裝載鎖定室3200。分度盤3100設置在裝載鎖定室 3200前面,該分度盤3100內安裝有複數載具3110。分度 盤3 10 0稱爲設備前端模組(下文稱爲EFEM),且在某些 場合係指包括裝載鎖定室。如果需要的話’基板處理系統 可包括冷卻室(未示),用以冷卻已處理過的基板。 裝載鎖定室3200包括在大氣壓力下作業的大氣壓力 傳輸機械手3210。大氣壓力傳輸機械手3210在傳輸室 3 3 0 0和分度盤3 1 0 0之間傳輸基板。操作大氣壓力傳輸機 械手3 2 1 0,以在載具3 1 1 0和傳輸室3 3 0 0之間傳輸基板 W。大氣壓力傳輸機械手3210被包括有雙臂構造的機械 手執行,該構造具有四個末端效應器,以從載具3 1 1 0取 出二片基板W,並立刻將該等基板放入傳輸室3 3 00內。 大氣壓力傳輸機械手3210包括軌道3220,大氣壓力傳輸 機械手32 10沿著該軌道3220橫向運動。一般半導體製造 -44- 200818378 (42) 製程所使用的各種機械手和本發明之本實施例的雙臂型機 械手,可用做大氣壓力傳輸機械手3210。 第一和第二處理室3400、3410包括用以執行電漿製 程的真空室。基板支撐台3402、3412分別設在第一和第 二處理室3 400、3410內的個別路徑上。該等路徑是基板 傳輸設備3 500之迴轉板臂旋轉的路徑。可建構第一和第 二處理室3400、34 1Ό:,以執行各種基板處理作業。例如第 φ 一和第二處理室3400、3410可爲用於使用電漿移除光阻 劑的灰化室、用於沉積-絕緣層的化學氣相沉積(CVD )室 、用於在絕緣層蝕刻孔或開口以形成互連構造的蝕刻室、 用於沉積阻障層的物理氣相沉積(PVD )室、或用於沉積 金屬層的物理氣相沉積室。 由本發明之本實施例的基板處理系統所處理的基板W ,通常是用於製造半導體電路的晶圓基板、或用於製造液 晶顯示器的玻璃基板。爲了執行完整製造積體電路或晶片 φ 所需的全部製程,可需要複數處理系統,不只本發明之本 實施例的基板處理系統而已。但是,爲了使本發明清晰, 所以省略了熟悉該項技藝者所瞭解的普通構造。 傳輸室3 3 0 0包括位在中央的傳輸室4 0 0、及分別設在 傳輸室400之橫向側邊的第一和第二處理室500、600。至 少二個基板支撐台 520、522、620、622分別設置在第一 和第二處理室5 0 0、6 0 0中。傳輸模組4 0 0包括基板傳輸 設備8 0 0。 傳輸室3 300包括基板傳輸設備3 500。第一基板入口 - 45- 200818378 ^ (43) 33 10形成在傳輸室3 3 00和裝載鎖定室3200之間。第二基 板入口 3 320形成在傳輸室3 3 00和第一處理室3400之間 。第三基板入口 33 00形成在傳輸室33 00和第二處理室 3410之間。第一至第三基板入口 3310、3 320、3 3 3 0由間 縫閥(slit valve,未示)打開或關閉。 處理前和處理後基板在傳輸室3 3 00內的交換’由大 氣-壓-力傳輸機-械手3210在大氣壓力下執行,其中第二和 φ 第三基板入口 3320、3 3 3 0被關閉,且第一基板入口 3310 被打開。-另一方面,處理前和處理後基板'在第一、二處理 室3400、3410和傳輸室33 00之間的交換,由基板傳輸設 備3 500執行,且在真空狀態中進行,其中第一基板入口 3310被關閉且第二、三基板入口 3320、3330被打開。 圖3 2是例示設置在圖3 1之傳輸室內基板傳輸設備的 透視圖。 參考圖32,基板傳輸設備3 500包括用以提供旋轉力 φ 的驅動單元3 5 4 0、連接至驅動單元3 5 4 0單一主軸3 5 3 0、 和安裝在主軸3 5 3 0的複數迴轉板臂3 5 1 0。複數迴轉板臂 3 5 1 〇包括二支第一迴轉板臂和二支第二迴轉板臂。該等第 一迴轉板臂用以將基板裝載在第一處理室3400上、或從 第一處理室3400卸載基板;該等第二迴轉板臂用以將基 板裝載在第二處理室3400上、或從第二處理室3400卸載 基板。第一和第二迴轉板臂交替地配置。但是第一和第二 迴轉板臂可連續地配置。複數的迴轉板臂3 5 1 〇可分成裝 載臂3 520和卸載臂3 522。在此案例中,卸載臂3 522較佳 -46- 200818378 (44) 是配置成比裝載臂3 520低。裝載臂3 520和卸載臂3 522 配成對,且在如圖所示的實施例中,設置四個迴轉板臂配 成二對。 如圖3 1所例示,複數迴轉板臂3 5 1 0展開成扇形。雖 然未顯示在圖式中,但是驅動單元3 540包括用以產生旋 轉力的電動馬達和用以傳輸所產生之旋轉力至主軸3 5 3 0 的齒輪組合體,使複數迴轉板臂3 5 1 0執行所欲的作業。 0 因此,複數迴轉板臂3 5 1 0安裝在主軸3 5 3 0,且如圖3 1所 例示,該等迴轉板臂3 5 1 0對稱地展開成扇形,且相對於 主軸3 5 3 0收合。 圖3 3例示基板傳輸設備的範例,其具有彼此分離的 上驅動單元和下驅動單元。 參考圖33,本發明此實施例的基板傳輸設備3 5 00a包 括下、上主軸3 5 3 0a 、3 53 0b和下、上驅動單元3 540a、 3 540b。裝載臂3 5 20和卸載臂 3 522分別安裝至下主軸 ^ 3530a和上主軸3530b。下、上驅動單元3540a、3540b分 別驅動下、上主軸 3 5 3 0a 、3 53 0b。此處的下、上主軸 3 5 3 0a 、3 5 3 0b兩者,最好是對齊相同的軸。 圖3 4是例示迴轉板臂之構造的透視圖。 參考圖34,設置在基板傳輸設備3500內的複數迴轉 板臂3 5 1 0包含馬蹄形末端效應器3 5 1 2和複數支撐部3 5 1 4 。該末端效應器3 5 1 2包括含有開放側的開口 3 5 1 3。基板 的邊緣定位在該等支撐部3 5 1 4的上側。提供開口 3 5 1 3以 允許設置在基板台內的舉升銷能進入和退出。末端效應器 -47- 200818378 _ (45) 3512具有入口路徑3515,大氣壓力傳輸機械手3510的末 端效應器3 5 1 2經由該入口路徑3 5 1 5進入或退出。迴轉板 臂3 5 1 0可以具有本發明之範圍的其他形式修飾。 本發明的基板傳輸設備如下文所述地執行基板傳輸。 在第二和第三基板入口 3320、3 3 3 0關閉的狀態中, 當第一基板入口 3 3 1 〇打開時,未處理的基板w被傳輸至 基板傳輸設備3500的裝載臂3520。當完成傳輸基板W時 φ ,關閉第一基板入口 3310,且傳輸室3 3 00被轉換成和第 一、二處理室3400、3400之內部相同的真空狀態。當然 ,本發明之此實施例的系統中設置用於真空狀態的泵系統 ,但是爲了方便'所以省略未示。 其次,以處理過的基板停留在第一、二處理室3 4 0 0、 3410之基板支撐台上。當支撐台3402、3412的舉升銷上 升時,已處理過的基板W被舉升至預定的高度。爲配合 此作業,第二和第三基板入口 3320、3330被打開。基板 φ 傳輸設備35 00的裝載臂3 520和卸載臂3522配成對,且 展開成扇形。此時,已處理過的基板W被從舉升銷傳輸 至卸載臂3522。 在傳輸基板W以後,卸載臂3 5 2 2回到傳輸室3 3 0 0 的起始位置。舉升銷再度上升,以接收未處理的基板W。 裝載臂3 5 2 0回到傳輸室3 3 0 0的起始位置。同時,第二和 第三基板入口 3 320、3 3 3 0再度關閉。配合此作業,舉升 銷下降,以將未處理的基板W放置在基板支撐台3 4 0 2、 3412上。其次,傳輸室3300被轉換至大氣壓力狀態,且 -48- 200818378 (46) 第一基板入口 3310被打開。裝載鎖定室3200的大氣壓力 傳輸機械手3210,接收來自卸載臂3 522之已處理過的基 板W,並從傳輸室3400退出。 此交換基板的連續作業在一範圍內連續且同時地執行 ,前作業和後作業在該區域內不會彼此干擾,以將交換基 板所需的時間最小化。處理前和處理後基板的交換,由大 氣壓力傳輸機械手3210和傳輸室3 3 00之基-板售-輸-設费 φ 3 5 00同時執行。換言之,基板的交換在傳輸室3400和裝 載鎖定室3200之間執行,藉此,前作業所卸載的已處·理 過的基板,和待同時裝載的處理前基板相交換。卸載之已 處理過的基板W,被大氣壓力傳輸機械手3 2 1 0累積在載 具3 1 1 0內。 如果已卸載的基板W需要被冷卻,則基板處理系統 可包括冷卻室,以冷卻基板。爲了此目的,冷卻室可設在 基板處理系統的適當位置。在其他實施例中,第一和第二 φ 處理室3400、3410其中之一,可當作冷卻室。例如可將 第一處理室3400當作電漿室,且第二處理室3410做爲冷 卻室。在此情況中,第一處理室3400執行基板的電漿處 理,且基板傳輸設備3 5 00將已處理過的基板從第一處理 室3 400傳輸至第二處理室3410以冷卻。已冷卻的基板可 被從第二處理室3410傳輸至裝載鎖定室3200。 如果未處理的基板W需要被對齊,則基板處理系統 可進一步包括冷卻室,以冷卻基板。爲了此目的,對齊裝 置可設在基板處理系統內的適當位置。在其他實施例中, -49- 200818378 ^ (47) 第一和第二處理室 3400、3410其中之一,可當作對齊裝 置。例如可將第一處理室3400當作電漿室,且第二處理 室34 10做爲對齊裝置。在此情況中,在第一處理室3400 執行基板的電漿處理之前,基板傳輸設備3 500傳輸第二 處理室3410內的基板,以在處理前對齊,且基板被傳輸 至第一處理室3400,以執行電漿處理。 因此,依據本發明之此賓-施例的基板處理系統,爲了 φ 同時處理複數基板,第一和第二處理室3400、3410平行 地配置,且傳輸室3 3 0 0設在第一處理-室3 4 0 0和第二處理 室3410之間。設置基板傳輸設備800使能在此結構中快 速地交換基板,以便能同時處理且快速地交換處理前和已 處理過的基板。 圖3 5是例示具有分離地被驅動之基板傳輸設備的基 板處理系統平面視鼠,圖3 6是例示迴轉板臂之修飾的平 面視圖。 φ 參考圖35,分離地被驅動之基板傳輸設備3 5 00a、 3 5 0 0 b分成左部分和右部分,其被獨立地驅動,且設置在 傳輸室3 3 00內。換言之,一個基板傳輸設備3 5 0〇a傳輸 第一處理室3400的基板,且另一個基板傳輸設備3500b 傳輸第二處理室3 4 1 0的基板。因爲分離地被驅動之基板 傳輸設備35〇Oa、3 5 00b的詳細結構,和圖32、33所示者 相同,所以省略其描述。如圖3 6所例示,分離地被驅動 之基板傳輸設備3 500a、3 500b,可包括L型的迴轉板臂 3510、 -50- 200818378 (48) 圖3 7是例示具有複數處理組之基板處理系統的平面 視圖。 參考圖37,基板處理系統包括複數處理組3 600、 3610、3 620。複數處理組3600、3610、3620類似圖31所 例示的結構,處理室位在中央,而電漿處理室分別設在處 理室的橫向側。在複數處理組3 600、3610、3 620當中, 第一和第三處理組3 6-00、3-6:20彼此面對,且第二處理組 φ 3610設在後側。位在裝載鎖定室3200內的大氣壓力傳輸 機械手3210,包括呈T型配置的軌道3220和323 0。 大氣壓力傳輸機械手3210沿著軌道3220、3 23 0運動 ,以再分度盤3100的再具3110和第一至第三處理組3600 、3610、3 620之間傳輸基板。設在第一至第三處理組 3600、3610、3620內的二個處理室,可爲執行電漿處理的 腔室。此外,任一處理室可爲冷卻室或對齊裝置。在其他 實施例中,設在第一至第三處理組3 600、3610、3 620之 φ 任一處理組內的二個處理室兩者,可爲冷卻室或對齊裝置 。因此,設在第一至第三處理組3 600、3610、3 620內之 複數處理室其中至少一個處理室,可爲冷卻室和/或至少 一個對齊裝置。 如上所述,依據本發明,處理前和處理後的基板在基 板處理系統內快速地交換,且複數基板在基板處理系統內 同時或連續地處理,因此可增加系統的處理率,且可增加 基板的整體生產力。因爲提供了同時裝載和卸載基板的基 板傳輸設備,所以處理室非常容易執行處理複數基板。用 -51 - 200818378 (49) 於傳輸基板的時間減少了,所以增加了生產力。顯著地減 少系統的面積和寬度’所以可將設備成本和安置成本最小 化。處理室、對齊室、和冷卻基板室彼此重疊’使能減少 基板處理系統的總底部區域。因此’清潔室可比習知者狹 窄,且也可減少清潔室之冷氣設備的成本。再者’因爲用 於傳輸已對齊之基板至處理基板的位置之傳輸距離短、或 用-於傳-輸已處理過的基板至冷卻基板的位置之傳輸距離短 φ ,且不需例如改變方向等不必要的作業’所以可減少用於 傳輸基板的時間,並增加基板的產量。 本發明已使用較佳的例示實施例做說明,但是應瞭解 ,本發明的範圍並不限於所揭露的實施例。相反地,本發 明的範圍意欲包括在熟悉該項技藝人士之能力內,使用現 在已知的技術或未來的技術和其均等技術,對本發明之基 板傳輸設備和基板處理系統所做的各種修飾和取代性的配 置。因此,請求項的範圍應做最廣範圍的解釋,以含蓋全 φ 部此等修飾和類似的配置。 【圖式簡單說明】 藉由參考附圖詳細描述本發明的較佳實施例,該項技 藝中具有普通技術者,可更瞭解本發明之上述和其他特徵 及優點。附圖如下: 圖1 A是例示本發明第一實施例之基板處理系統整體 構造的視圖; 圖1 B是例示圖1 A基板處理系統的平面圖; -52- 200818378 (50) 圖2是例示設置在傳輸室內之基板傳輸設備的透視圖 f 圖3例示基板傳輸設備的範例,其具有被獨立地驅動 的上部和下部; 圖4是例示迴轉板臂之構造的透視圖; 圖5 A至5 E是連續地例示基板傳輸設備執行基板交換 作業的視圖; φ 圖6例示具有使用二驅動軸之基板傳輸設備的例子; 圖7A和圖7B是例_禾~基板傳輸設備修飾例的蒼圖,其 具有主軸和驅動單元,其被分成右部分和左部分; 圖8是例示使用四支分離主軸之基板傳輸設備的視圖 圖9A和圖9B是例示基板傳輸設備的修飾例,其具有 主軸和驅動單元; 圖1 〇是本發明第二實施例之基板處理系統的平面視 ❿ 圖; 圖1 1是例示基板傳輸設備所傳輸之基板流動的視圖 f 圖1 2和圖1 3是例示本發明實施例之基板處理系統的 修飾例視圖; 圖1 4是例示本發明第三實施例之基板處理系統整體 構造的視圖, 圖1 5是圖1 4之基板處理系統的平面視圖, 圖1 6是設置在傳輸室內之基板傳輸設備的透視圖; -53- 200818378 (51) 圖17A至圖17D是例示基板傳輸設備之第一至第四 傳輸構件的透視圖; 圖18A至圖18D是連續例示基板傳輸設備所執行之 基板交換作業的視圖; 圖1 9是例示具有可伸展板臂之傳輸構件的視圖; 圖20是例示基板處理系統修飾例的視圖,其使用具 有圖1 9所例示之傳輸構件的基板傳輸設備; φ 圖21是例是本發明第四實施例之基板處理系統的整 體構造的~視-圖; 圖22A至圖22C是例示基板處理系統的平面視圖,其 第一、第二、第三處理組例示在圖2 1中; 圖23A是例示設在第一傳輸室內之第一基板傳輸設備 的透視圖; 圖23B是例示設在第二傳輸室內之第二基板傳輸設備 的透視圖; φ 圖23C是例示設在第三傳輸室內之第三基板傳輸設備 的透視圖; 圖24是例示迴轉板臂構造的透視圖; 圖25A至25E是連續地例示第一基板傳輸設備執行基 板交換作業的視圖; 圖26是例示第二處理組之剖面前視圖; 圖27 A至27C是連續地例示第二基板傳輸設備執行基 板交換作業的視圖; 圖2 8是例示第二處理組修飾例的平面視圖; -54- 200818378 . (52) 圖29是例75第二處理組另一修飾例的剖面前視圖, 其中對齊室和冷卻是配置在兩側; 圖3 0是例示本發明實施例之基板處理系統修飾例的 視圖; 圖3 1是例示本發明第五實施例之基板處理系統的平 面圖; 圖3 2是例示設置在圖3 1之傳輸室內基板傳輸-設-備-的 0 透視圖; 圖3 3例示基1反傳輸設備的範例,其具有彼此分離的 上驅動單元和下驅動單元; 圖34是例示迴轉板臂之構造的透視圖; 圖3 5是例不具有分離地被驅動型基板傳輸設備的基 板處理系統平面視圖; 圖3 6是例示迴轉板臂之修飾例的平面視圖·,和 圖37是例示具有複數處理組之基板處理系統的平面 痛^視圖。 【主要元件符號說明】 1〇〇 :分度盤(設備前端模組) 11 〇:載具 150 :(後)分度盤 200 :裝載鎖定室 2 1 0 :大氣壓力傳輸機械手 2 1 2 :末端效應器 -55 - 200818378 (53) 250 :(後)裝載鎖定室 3 0 0 :冷卻室 400 :傳輸室 410:第三基板入口 500 :第一處理室 5 1 0 :第一基板入口 520〜526 :(前)基板支撐台 φ 522 :(後)基板支撐台 600 :第二處理室 6 1 0 :第二基板入口 620〜626 :(前)基板支撐台 622 :(後)基板支撐台 7 0 〇 :電漿源 8 0 〇 :基板傳輸設備 8 1 0 :迴轉板臂 φ 8 1 2 :末端效應器 8 1 3 :開口 8 1 4 :支撐部 8 1 5 :入口路徑 820 :裝載臂 822 :卸載臂 830 :主軸 830a:下主軸(第一主軸) 8 3 0b :上主軸(第二主軸) -56- 200818378 (54) 8 3 0c : :第三主軸 8 3 0d :第四主軸 8 3 0e :第五主軸 830f : 第六主軸 830g ••第七主軸 8 3 Oh :第八主軸 840 : 驅動單元 赢 840a :下驅動單元(第一驅動單元) 840b :上驅動單元(第二驅-動單元) 840c :第三驅動單元 840d :第四驅動單元 840e :第五驅動單元 840f :第六驅動軍元 8 40g :第七驅動單元 8 4 Oh :第八驅動單元 • 1100 :分度盤 1110 :載具 1200 :裝載鎖定室 1210 :大氣壓力傳輸機械手 1300 :冷卻室 1400 :傳輸室 1402 :前側 1410 :第三基板入口 1500 :第一處理室 - 57 - 200818378 (55) 1510 : 第一基板入口 1 5 20 : 基板支撐台 1 5 22 : 基板支撐台 1 6 00 : 第二處理室 1610 : 第二基板入口 1 6 2 0 : 基板支撐台 1 6 22 : 基板支撐台 • 1700 : 電漿源 1 8 0 0 : 基板傳_輸設備 1 8 00a:傳輸室 1810a =第一傳輸構件 18 10b :第二傳輸構件 18 10c :第三傳輸構件 1810d ••第四傳輸構件 1810a, 1 :傳輸構件 • 1820 : 主軸 1 8 3 0 : 驅動單元 1 8409 :迴轉板臂 1 840 : 裝載臂(迴轉板臂) 1841-1 :第一可伸展板臂 Γ841-2 :第二可伸展板臂 1841-3 :第三可伸展板臂 1 842 :末端效應器 1843 :開口 200818378 (56) 1 844 :支撐部 1 8 4 5:入口路徑 1 8 50 :卸載臂(迴轉板臂) 2 0 1 0 :基板處理系統 2100 :分度盤 2 1 1 0 :載具 2200 :裝載鎖定室 0 2210:大氣壓力傳輸機械手 2400a :第一傳輸室 2400b :第二傳輸室 2400c :第三傳輸室 2410 :第三基板入口 2412 :第三基板入口 2414 :第三基板入口 2500a:第一處理室 φ 2500b :第二處理室 2510a:第一基板入口 25 10b :第二基板入口 2522:基板支撐台 2600a:第一對齊室 2600b:第二對齊室 2600c:第一對齊室 2600d :第二對齊室 2610a:第一基板入口 -59 - 200818378 (57) 2610b :第二基板入口 2640 : 旋轉夾頭 2640 : 旋轉夾頭 2650 : 偵測單元 2660 : 升降器 2700 : 冷卻室 27 10 : 第一基板入口 赢 2800a :第一基板傳輸設備 2800b :第二基板傳輸設備 2800d :第二基板傳輸設備 2810 : 迴轉板臂 2812 : 末端效應器 2813 : 開口 2814 : 支撐部 2815 : 入口路徑 • 2 8 20 : 裝載臂 2 8 22 : 卸載臂 2 83 0 : 主軸 2 8 40 : 驅動單元 3100 : 分度盤 3 110 : 載具 3 200 : 裝載鎖定室 3210 : 大氣壓力傳輸機械手 3220 : 軌道 -60- 200818378 (58)The first and second processing chambers 2500a, 2500b can be constructed to perform various substrate processing operations. For example, the first and second processing chambers 500, 600 may be an ashing chamber for removing photoresist using plasma, a chemical vapor deposition (CVD) chamber for depositing an insulating layer, for etching in an insulating layer A hole or opening to form an etch chamber of an interconnect structure, a physical vapor deposition (PVD) chamber for depositing a barrier layer, or a physical vapor deposition chamber for depositing a metal layer. φ The substrate W processed by the substrate processing system of the present embodiment of the present invention is generally a wafer substrate for manufacturing a semiconductor circuit or a glass substrate for manufacturing a liquid crystal display. In order to perform all the processes required to completely fabricate an integrated circuit or wafer, a complex processing system may be required, not only the substrate processing system of the present embodiment of the present invention. However, in order to clarify the invention, the ordinary constructions known to those skilled in the art are omitted. Referring to Figures 22B and 26, the second processing group b positioned in the second layer includes first and second alignment chambers 2600a, 2600b, and a second transfer chamber 2400b - 35 - 200818378 ^ (33) first disposed therebetween And the second alignment chambers 2600a, 2600b respectively include a rotary chuck that is disposed on each of the rotary paths of the rotary plate arms of the second substrate transfer apparatus 2800b. The first and second alignment chambers 2600a, 2600b are chambers that are aligned with the front substrate in the first and second processing chambers 25a, 2500b. And the first and second alignment chambers 2600a, 260 0b include a substrate aligner having a rotary chuck 2640, a detecting unit (ie, an inductor) 2650, and a height adjustment of the rotating chuck 2640 according to the φ height of the rotating plate arm. Lifter 2660. The substrate aligner can be configured such that when the substrate is placed on the rotary chuck 2640 such that the detection unit 2650 disposed on the side of the standby board detects the position of the substrate, the substrate aligner rotates the rotary chuck 2640. The detecting unit 2650 herein includes a charge coupled device (CCD) and a corresponding light source, and is used for detecting the position of the substrate. On the other hand, as shown in Fig. 26, according to the positions of the first and second swivel plate arms, the rotary collet 2640 of the first alignment chamber 2600b is disposed to be a collet 2 6 of the second alignment chamber 2 6 0 a. The position of 40 is still low. φ The first substrate inlet 2010a is formed between the first transfer chamber 2400a and the first alignment chamber 2600a, and the second substrate inlet 2610b is formed between the second transfer chamber 24 00b and the second alignment chamber 2600b. A third substrate inlet 2412 is formed between the second transfer chamber 2400b and the load lock chamber 2200. The first to third substrate inlets 2610a, 2610b, 2412 are opened or closed by a slit valve (not shown). Referring to Fig. 22C, the third processing group c positioned at the uppermost layer includes a third transfer chamber 2400c aligned to the second transfer chamber 2400b, and a cooling chamber 2700 disposed at the side thereof. The first substrate inlet 2710 is formed between the third transfer chamber - 36 - 200818378 ^ (34) 2400c and the cooling chamber 2700, and the third substrate inlet 2414 is formed between the third transfer chamber 2400c and the load lock chamber 2200. The first and third substrate inlets 2710, 2414 are opened or closed by a slit valve (not shown). As is known and need not be described in detail, the cooling chamber 2700 is a chamber for cooling the four substrates that have been processed by the first and second processing chambers. The cooling chamber must include a cooling station for placing the four substrates. The cooling chamber may further include a φ cooling gas supplier to supply cooling air to the substrate. Since the structure and method of cooling the substrate are well known and known to those skilled in the art, the structure and method are omitted. 23A to 23C are perspective views of first, second, and third substrate transfer apparatuses provided in the first, second, and third transfer chambers. First, referring to Fig. 23A, the first substrate transfer apparatus 2800a includes a drive unit 2840 for supplying a rotational force, a single spindle 2 830 connected to the drive unit 2840, and eight rotary plate arms 2810 mounted to the spindle 2830. φ The eight rotary plate arms 2 8 1 0 include a plurality of first rotary plate arms and a plurality of second rotary plate arms. The first rotary plate arms are used to load the substrate on the first processing chamber 2500a or to unload the substrate from the first processing chamber 2500a; the second rotary plate arms are used to load the substrate on the second processing chamber 2500b. Or unloading the substrate from the second processing chamber 25 00b. The first and second swivel plate arms are alternately arranged. However, the first and second swivel plate arms can be continuously arranged. The plurality of swivel plate arms 2810 can be divided into a loading arm 2820 and an unloading arm 2822. In this case, the unloading arm 2822 is preferably configured to be lower than the loading arm 2820. The loading arm 2 820 and the unloading arm 2822 are paired and, in the embodiment shown - 37-200818378. (35) Set eight rotary arm arms into four pairs. As shown in Fig. 22A, the plurality of returning plate arms 2810 are fanned out and can be swung, raised, and lowered. The loading arm 2820 and the unloading arm 2822 are configured to operate in pairs. Although not shown in the drawings, the drive unit 2840 includes an electric motor for generating a rotational force and a gear assembly for transmitting the generated rotational force to the main shaft 2830 to cause the plurality of swivel arms 2810 to perform the desired operation. Therefore, the plurality of swivel plate arms 2810 are mounted on the main shaft ^ 283 0, and as illustrated by φ 22A, the swivel plate arms 2810 are symmetrically expanded into a fan shape, and are folded in different rotations of the first transfer chamber 2 4 0 0 a radius. While the substrate processing system of the present invention is described as including a single spindle, the substrate processing system can include a plurality of spindles disposed on the lateral sides of the spindle. Figure 23B is a perspective view illustrating a second substrate transfer apparatus provided in the second transfer chamber. Referring to FIG. 23B, the second substrate transfer apparatus 2800b is like a first substrate transfer device 2800a including a drive unit 2840 for providing a rotational force, a single spindle 2830 connected to the drive unit 2840, and four swings mounted on the spindle 2830. Plate arm 2 8 1 0. The second substrate transfer device 2 800b may include a plurality of drive units and spindles respectively coupled to the respective drive units such that the four rotary plate arms 2 8 1 0 are independently rotatable. The four swivel arm 2810 includes two first swivel arms and two second swivel arms. The first rotary plate arms are disposed on the lower side for loading the substrate on the first alignment chamber 26 00a or unloading the substrate from the first alignment chamber 2 600a; the second rotary plate arms are used to load the substrate Two alignment chambers -38- 200818378 . (36) 2 600b, or unloading the substrate from the second alignment chamber 2600b. The first and second swivel plate arms are continuously arranged. However, the first and second swivel plate arms are alternately arranged. As illustrated in Fig. 26, the rotary chuck 2640 of the first alignment chamber 2600b is disposed lower than the rotary chuck 2640 of the second alignment chamber 2600a depending on the positions of the first and second rotary plate arms. Figure 23C is a perspective view of a second substrate transfer apparatus in which the τικ is disposed in the transfer chamber of the table 2. Referring to FIG. 23C, the third substrate transfer device 2800c is like a substrate transfer device 2800a, which includes a drive unit 2840 for providing a rotational force, a single spindle 2830 connected to the drive unit 2840, and mounted on Four turns plate arms 2810 of the main shaft 2830. The four rotary plate arms 2810 are used to load the substrate on the cooling chamber 27 or to unload the substrate from the cooling chamber 2700. Although not shown in the drawing, the first substrate transfer device may include upper and lower a spindle and a drive unit for driving the upper and lower spindles. Wherein, the loading arm 2820 and the unloading arm 2822 are respectively mounted to the upper main shaft and the lower main shaft Φ, and the driving unit has an upper driving unit and a lower driving unit. Figure 24 is a perspective view illustrating the configuration of a single swivel plate arm. Referring to Figure 24, a plurality of swivel plate arms 2810 disposed within first, second, and third substrate transfer devices 2800a, 2800b, 2800c include a horseshoe end effector 2812 and a plurality of support portions 2814. The end effector 2812 includes an opening 2 8 1 3 having an open side. The edges of the substrate are positioned on the upper side of the support portions 28 14 . An opening 2813 is provided to allow the lift pins disposed within the substrate table to enter and exit. End effector 28 1 2 has an inlet path 2815 to which end effector 2212 of atmospheric pressure transfer robot 210 enters or exits via -39-200818378, (37). The swivel plate arm 2810 can have other forms of modification within the scope of the invention. 25A to 25E are views continuously illustrating a first substrate transfer apparatus performing a substrate exchange job. Referring first to FIG. 25A, as indicated by an arrow S210, in a state where the first and second substrate inlets 2510a, 2510b are closed, when the third substrate inlet 24 1 is opened, the unprocessed substrate W2 is transferred to the substrate transfer φ device. 2800a. When the transfer substrate W2 is completed, the third substrate inlet 2410 is closed, and the first transfer chamber 2400a is converted into the same vacuum state as the inside of the first and second process chambers 25 0 0a, 25 00b. Of course, the pump system for the vacuum state is provided in the system of this embodiment of the present invention, but is omitted for convenience. Next, as shown by an arrow S220 in Fig. 25B, when the lift pins of the plurality of support stages 2520, 2 522 rise, the processed substrate W1 is lifted to a predetermined height. To match this operation, the first and second substrate inlets φ 2510a, 2510b are opened. At this time, the lifted pin of the front substrate support table 2520 is relatively lower in height than the lift pin of the rear substrate support table 2522. Therefore, the loading arm 2820 for loading/unloading does not interfere with the lift pins. Continuing, as shown by an arrow S23 0 in Fig. 25C, the loading arm 2 8 2 0 and the unloading arm 2 8 2 2 of the substrate transfer device 2800 are symmetrically rotated in pairs and expanded into a fan shape. At this time, the processed substrate W 1 is transferred from the lift pin to the unloading arm 2822. Continuing, as shown by an arrow S240 in Fig. 25D, when the processed substrate W1 is transferred, it is unloaded. Arm 2822 returns to the first -40-200818378. (38) The starting position of the transfer chamber 2400a. As indicated by the arrow S2 50, the lift pin is again raised to receive the unprocessed substrate W2 from the loading arm 2820. As indicated by arrow S260 in Fig. 25E, the loading arm 2820 also returns to the starting position of the first transfer chamber 2400a. At the same time, the first and second substrate inlets 25 10, 25 10b are again closed. As indicated by arrow S2 70, the lift pins are lowered to place the unprocessed substrate W2 on the substrate support tables 2520, 2522. 第一 φ The first transfer chamber 2400a is switched to the atmospheric pressure state, and the third substrate inlet 2410. Was opened. As indicated by an arrow S280 in Fig. 25E, the atmospheric pressure transmitting robot 2210 of the load lock chamber 2200 receives the processed substrate W1 from the unloading arm 2822 and exits from the first transfer chamber 2400a. The continuous operations S210 to S280 of the exchange substrate are continuously and simultaneously performed in a range in which the front work and the post work do not interfere with each other to minimize the time required to exchange the substrates. It will be appreciated that jobs φ S210 and S280 are simultaneously executed during repeated substrate exchange operations. In other words, the exchange of the substrate is performed between the first transfer chamber 2400a and the load lock chamber 2200, whereby the processed substrate unloaded by the previous job is exchanged with the pre-process substrate to be loaded at the same time. 27A to 27C are views continuously illustrating a second substrate transfer apparatus performing a substrate exchange job. Referring first to Figure 27A, as indicated by arrow S210, when the third substrate inlet 2412 is open, the unprocessed substrate W1 is transferred to the substrate transfer device 28 00b. When the transfer of the substrate is completed, the third substrate inlets 2412 - 41 - 200818378 (39) are closed, and at the same time, the first and second substrate inlets 2610a, 2610b are opened. Continuing, as indicated by arrow S220 in Fig. 27B, one of the first swivel plate arms of the second substrate transfer device 2800b and one of the second swivel plate arms are symmetrically rotated and unfolded to place the substrate W 1 at Corresponding to the rotating chuck 2640. And returning to the home position as indicated by an arrow S230 in Fig. 27C. When the alignment of the substrates in the first and second alignment chambers 2600a, 2600b is completed, the alignment of the remaining two φ substrates is performed in a similar operation as described above. When the secondary alignment of the four substrates is completed, the robot 2210 is transported at atmospheric pressure, and the aligned substrates are transferred from the second transfer chamber 2400b to the first transfer chamber 2400a. The atmospheric pressure transfer robot 2210 can adjust the height immediately after the substrate is taken out from the second transfer chamber 2400b, and transfer the substrate from the second transfer chamber 2400b to the first transfer chamber 2400a. In other words, since the third substrate inlets 2410, 2420 of the first and second transfer chambers 2800a, 2800b are aligned with each other, the atmospheric pressure transfer robot 2210 can quickly transfer the substrate from the second transfer φ chamber 2400b to the first transfer chamber. 2400a without having to change direction. Meanwhile, the substrates processed in the first and second processing chambers 2500a and 2500b are transferred to the third transfer chamber 2400c by the atmospheric pressure transfer robot 22 1 0. In this operation, the atmospheric pressure transmitting robot 2210 can quickly transfer the substrate from the first transfer chamber 2400a to the third transfer chamber 2400c without changing the direction. The substrate is transferred to the cooling chamber 2700 by the third substrate transfer device 2800c provided in the transfer chamber 2400c, and is cooled in the cooling chamber 2700. The substrate is taken out by the atmospheric pressure transmission robot 2210 and accumulated in the carrier 2100. - 42 - 200818378 ^ (40) In this embodiment, since the first and second processing chambers 2500a, 2500b simultaneously process the four substrates W, 24 substrates W are simultaneously cooled in the cooling chamber 2700. However, the time required to cool the substrate can be longer than the time required to process the substrate. In this case, the cooling chamber 2700 can be disposed on the lateral side of the third transfer chamber 2400c because the overall efficiency is considered. The substrate processing system can be modified by the alternative embodiments described below. 28 is a view illustrating that the first alignment chamber 2600c and the second alignment chamber 2600d φ are respectively aligned with the substrate. As illustrated in Fig. 28, similar to the first and second processing chambers 2500a, 2500b, the first and second alignment chambers 2600c, 2600d can be constructed such that the two substrates are aligned within one chamber. W 29 is a front cross-sectional view illustrating the modification of the second treatment group. As illustrated in Fig. 29, in the modified second treatment group b', any of the first and second alignment chambers 2600a, 2600b is replaced by a cooling chamber 2700. When the second processing group b' is used, the third processing group can be omitted. As illustrated in Fig. 29, since the time for aligning the substrate is short, it is preferable to replace one chamber with a cooling chamber. In this case, the second and second substrate substrate transfer devices 2800d, 2800e must be disposed in the second transfer chamber 2400b. In other words, the second upper substrate transfer device 2800d is for transferring the substrate to be aligned, and the third lower substrate transfer device 2 800e is for transferring the substrate to be cooled. Here, since the second substrate transfer device 2800d transmits one substrate in this order, the drive unit preferably drives the rotary plate arms independently to transfer the substrate. As shown in Fig. 30, the substrate processing system of this embodiment of the present invention may include a single cooling chamber 2700. By removing the third treatment group c, the cooling chambers 2700 - 43 - 200818378 (41) are disposed on the upper side of the second treatment group b. The cooling chamber 2700 can include a table with four substrates placed simultaneously on the table. And four substrates are directly loaded in the cooling chamber 2700 by the atmospheric pressure transmitting robot 22 10 . Embodiment 5 Figure 3 is a plan view showing a substrate processing system of a fifth embodiment of the present invention. Referring to FIG. 3, the substrate processing system of this embodiment of the present invention includes first and second processing chambers 3 40 0, 3 4 1 0, a transfer chamber 3300 disposed between the first and second processing chambers 3400, 3410, And a load lock chamber 3200 disposed in front of the transfer chamber 3300. The indexing plate 3100 is disposed in front of the load lock chamber 3200, and the plurality of carriers 3110 are mounted in the index plate 3100. The indexing disk 3 10 0 is referred to as a device front end module (hereinafter referred to as EFEM), and in some cases is meant to include a load lock chamber. If desired, the substrate processing system can include a cooling chamber (not shown) for cooling the processed substrate. The load lock chamber 3200 includes an atmospheric pressure transfer robot 3210 that operates at atmospheric pressure. The atmospheric pressure transfer robot 3210 transfers the substrate between the transfer chamber 3300 and the indexing plate 3100. The atmospheric pressure transfer robot 3 2 1 0 is operated to transport the substrate W between the carrier 3 1 1 0 and the transfer chamber 3 300 . The atmospheric pressure transfer robot 3210 is executed by a robot including a two-arm configuration having four end effectors to take out two substrates W from the carrier 3 1 1 0 and immediately place the substrates in the transfer chamber Within 3 3 00. The atmospheric pressure transfer robot 3210 includes a track 3220 along which the atmospheric pressure transfer robot 32 moves laterally. General Semiconductor Manufacturing -44- 200818378 (42) The various manipulators used in the process and the dual-arm type machine of the present embodiment of the present invention can be used as the atmospheric pressure transmission robot 3210. The first and second processing chambers 3400, 3410 include vacuum chambers for performing a plasma process. Substrate support tables 3402, 3412 are respectively disposed on individual paths within the first and second processing chambers 3400, 3410. These paths are paths in which the rotary plate arms of the substrate transfer device 3 500 rotate. The first and second processing chambers 3400, 34 1 : can be constructed to perform various substrate processing operations. For example, the φth and second processing chambers 3400, 3410 may be an ashing chamber for removing photoresist using a plasma, a chemical vapor deposition (CVD) chamber for depositing an insulating layer, or for use in an insulating layer. The holes or openings are etched to form an etch chamber of interconnect construction, a physical vapor deposition (PVD) chamber for depositing a barrier layer, or a physical vapor deposition chamber for depositing a metal layer. The substrate W processed by the substrate processing system of the present embodiment of the present invention is generally a wafer substrate for manufacturing a semiconductor circuit or a glass substrate for manufacturing a liquid crystal display. In order to perform all the processes required for the complete fabrication of the integrated circuit or wafer φ, a complex processing system may be required, not only the substrate processing system of the present embodiment of the present invention. However, in order to clarify the invention, the ordinary constructions known to those skilled in the art are omitted. The transfer chamber 3300 includes a transfer chamber 400 located at the center and first and second processing chambers 500, 600 respectively disposed at lateral sides of the transfer chamber 400. At least two substrate support tables 520, 522, 620, 622 are disposed in the first and second processing chambers 500, 610, respectively. The transmission module 400 includes a substrate transfer device 800. The transfer chamber 3 300 includes a substrate transfer device 3 500. First substrate inlet - 45 - 200818378 ^ (43) 33 10 is formed between the transfer chamber 3 3 00 and the load lock chamber 3200. A second substrate inlet 3 320 is formed between the transfer chamber 3 300 and the first processing chamber 3400. The third substrate inlet 33 00 is formed between the transfer chamber 33 00 and the second process chamber 3410. The first to third substrate inlets 3310, 3 320, 3 3 3 0 are opened or closed by a slit valve (not shown). The exchange of the substrate in the transfer chamber 3 00 before and after the treatment is performed by the atmospheric-pressure-force transmitter-arm 3210 under atmospheric pressure, wherein the second and φ third substrate inlets 3320, 3 3 3 0 are Closed, and the first substrate inlet 3310 is opened. On the other hand, the exchange between the first and second processing chambers 3400, 3410 and the transfer chamber 33 00 before and after the processing is performed by the substrate transfer device 3 500 and is performed in a vacuum state, wherein the first The substrate inlet 3310 is closed and the second and third substrate inlets 3320, 3330 are opened. Figure 3 is a perspective view illustrating a substrate transfer apparatus disposed in the transfer chamber of Figure 31. Referring to FIG. 32, the substrate transfer apparatus 3 500 includes a drive unit 3 5 4 0 for providing a rotational force φ, a single spindle 3 5 3 0 connected to the drive unit 3 5 4 0, and a complex swing mounted on the spindle 3 5 3 0 Plate arm 3 5 1 0. The plurality of swivel arms 3 5 1 〇 include two first swivel arms and two second swivel arms. The first rotary plate arms are used to load the substrate on the first processing chamber 3400 or to unload the substrate from the first processing chamber 3400; the second rotary plate arms are used to load the substrate on the second processing chamber 3400, Or unloading the substrate from the second processing chamber 3400. The first and second swivel plate arms are alternately arranged. However, the first and second swivel plate arms can be continuously arranged. The plurality of rotary plate arms 3 5 1 〇 can be divided into a loading arm 3 520 and an unloading arm 3 522. In this case, the unloading arm 3 522 is preferably -46-200818378 (44) configured to be lower than the loading arm 3 520. The loading arm 3 520 and the unloading arm 3 522 are paired, and in the embodiment as shown, four swivel arms are provided in two pairs. As illustrated in Fig. 31, the plurality of rotary plate arms 3 5 10 are expanded into a fan shape. Although not shown in the drawings, the drive unit 3 540 includes an electric motor for generating a rotational force and a gear assembly for transmitting the generated rotational force to the main shaft 3 5 3 0 so that the plurality of rotary plate arms 3 5 1 0 Execute the desired job. 0 Therefore, the plurality of rotary plate arms 3 5 1 0 are mounted on the main shaft 3 5 3 0, and as illustrated in FIG. 31, the rotary plate arms 3 5 1 0 are symmetrically expanded into a fan shape, and relative to the main shaft 3 5 3 0 Collapse. Fig. 3 3 illustrates an example of a substrate transfer apparatus having an upper drive unit and a lower drive unit that are separated from each other. Referring to Fig. 33, the substrate transfer apparatus 3 500a of this embodiment of the present invention includes lower and upper spindles 3 5 3 0a , 3 53 0b and lower and upper drive units 3 540a, 3 540b. The loading arm 3 5 20 and the unloading arm 3 522 are mounted to the lower main shaft ^ 3530a and the upper main shaft 3530b, respectively. The lower and upper drive units 3540a and 3540b drive the lower and upper spindles 3 5 3 0a and 3 53 0b, respectively. Here, both the lower and upper spindles 3 5 3 0a and 3 5 3 0b are preferably aligned with the same axis. Fig. 34 is a perspective view illustrating the configuration of the swivel plate arm. Referring to Fig. 34, a plurality of rotary plate arms 3 5 1 0 disposed in the substrate transfer apparatus 3500 include a horseshoe end effector 3 5 1 2 and a plurality of support portions 3 5 1 4 . The end effector 3 5 1 2 includes an opening 3 5 1 3 containing an open side. The edge of the substrate is positioned on the upper side of the support portions 3 5 1 4 . An opening 3 5 1 3 is provided to allow the lift pins disposed within the substrate table to enter and exit. The end effector -47- 200818378 _ (45) 3512 has an inlet path 3515 through which the end effector 3 5 1 2 of the atmospheric pressure transmission robot 3510 enters or exits. The swivel plate arm 3 5 1 0 may have other forms of modification within the scope of the invention. The substrate transfer apparatus of the present invention performs substrate transfer as described below. In a state where the second and third substrate inlets 3320, 3 3 3 0 are closed, when the first substrate inlet 3 3 1 〇 is opened, the unprocessed substrate w is transferred to the loading arm 3520 of the substrate transfer apparatus 3500. When the transfer of the substrate W is completed φ, the first substrate inlet 3310 is closed, and the transfer chamber 3 3 00 is converted into the same vacuum state as the inside of the first and second process chambers 3400, 3400. Of course, the pump system for the vacuum state is provided in the system of this embodiment of the present invention, but is omitted for convenience. Next, the treated substrate is placed on the substrate support table of the first and second processing chambers 3400 and 3410. When the lift pins of the support tables 3402, 3412 rise, the processed substrate W is lifted to a predetermined height. To match this operation, the second and third substrate inlets 3320, 3330 are opened. The loading arm 3 520 of the substrate φ transporting device 35 00 and the unloading arm 3522 are paired and fanned out. At this time, the processed substrate W is transported from the lift pin to the unloading arm 3522. After transporting the substrate W, the unloading arm 3 5 2 2 returns to the starting position of the transfer chamber 3 3 0 0 . The lift pin is again raised to receive the unprocessed substrate W. The loading arm 3 5 2 0 returns to the starting position of the transfer chamber 3 300. At the same time, the second and third substrate inlets 3 320, 3 3 3 0 are again closed. In conjunction with this operation, the lift pins are lowered to place the unprocessed substrate W on the substrate support table 3 4 0 2, 3412. Next, the transfer chamber 3300 is switched to the atmospheric pressure state, and -48-200818378 (46) the first substrate inlet 3310 is opened. The atmospheric pressure transfer robot 3210 of the load lock chamber 3200 receives the processed substrate W from the unloading arm 3 522 and exits from the transfer chamber 3400. The continuous operation of the exchange substrate is performed continuously and simultaneously over a range, and the front work and the post work do not interfere with each other in the area to minimize the time required to exchange the substrates. The exchange of the substrate before and after the processing is performed simultaneously by the base-board sale-transfer-setting fee φ 3 5 00 of the atmospheric pressure transmission robot 3210 and the transmission chamber 3 300. In other words, the exchange of the substrate is performed between the transfer chamber 3400 and the load lock chamber 3200, whereby the processed substrate that has been unloaded by the previous work is exchanged with the pre-processed substrate to be loaded at the same time. The unprocessed substrate W is accumulated in the carrier 3 1 1 0 by the atmospheric pressure transmitting robot 3 2 1 0. If the unloaded substrate W needs to be cooled, the substrate processing system may include a cooling chamber to cool the substrate. For this purpose, the cooling chamber can be located at the appropriate location in the substrate processing system. In other embodiments, one of the first and second φ processing chambers 3400, 3410 can serve as a cooling chamber. For example, the first processing chamber 3400 can be regarded as a plasma chamber, and the second processing chamber 3410 can be regarded as a cooling chamber. In this case, the first process chamber 3400 performs plasma processing of the substrate, and the substrate transfer device 3500 transfers the processed substrate from the first process chamber 3400 to the second process chamber 3410 for cooling. The cooled substrate can be transferred from the second processing chamber 3410 to the load lock chamber 3200. If the unprocessed substrate W needs to be aligned, the substrate processing system may further include a cooling chamber to cool the substrate. For this purpose, the alignment device can be placed in position within the substrate processing system. In other embodiments, -49-200818378^(47) one of the first and second processing chambers 3400, 3410 can be considered as an alignment device. For example, the first processing chamber 3400 can be regarded as a plasma chamber, and the second processing chamber 3410 can be used as an alignment device. In this case, before the first processing chamber 3400 performs the plasma processing of the substrate, the substrate transfer device 3 500 transfers the substrate in the second processing chamber 3410 to be aligned before processing, and the substrate is transferred to the first processing chamber 3400. To perform plasma processing. Therefore, according to the substrate processing system of the present invention, in order to simultaneously process a plurality of substrates for φ, the first and second processing chambers 3400, 3410 are arranged in parallel, and the transfer chamber 3300 is set in the first processing - Between chamber 3400 and second processing chamber 3410. The substrate transfer apparatus 800 is arranged to enable rapid exchange of substrates in this configuration so that the pre-processed and processed substrates can be simultaneously processed and quickly exchanged. Fig. 35 is a plan view showing a substrate processing system having a substrate driving apparatus which is driven separately, and Fig. 36 is a plan view showing a modification of the rotary arm. φ Referring to Fig. 35, the separately driven substrate transfer apparatuses 3 5 00a, 3 5 0 0 b are divided into left and right portions, which are independently driven and disposed in the transfer chamber 3 3 00. In other words, one substrate transfer device 305a transmits the substrate of the first process chamber 3400, and the other substrate transfer device 3500b transports the substrate of the second process chamber 340. Since the detailed structure of the substrate transfer apparatuses 35A0a, 3500b which are driven separately is the same as that shown in Figs. 32 and 33, the description thereof will be omitted. As illustrated in FIG. 36, the separately driven substrate transfer devices 3 500a, 3 500b may include L-shaped rotary plate arms 3510, -50-200818378 (48). FIG. 37 is a substrate process with a complex processing group. A plan view of the system. Referring to FIG. 37, the substrate processing system includes a plurality of processing groups 3 600, 3610, 3 620. The complex processing groups 3600, 3610, 3620 are similar to the structure illustrated in Figure 31, with the processing chambers in the center and the plasma processing chambers on the lateral sides of the processing chamber. Among the plurality of processing groups 3 600, 3610, 3 620, the first and third processing groups 3 6-00, 3-6: 20 face each other, and the second processing group φ 3610 is disposed on the rear side. An atmospheric pressure transfer robot 3210 positioned within the load lock chamber 3200 includes rails 3220 and 323 0 in a T configuration. The atmospheric pressure transfer robot 3210 moves along the tracks 3220, 3 23 0 to transfer the substrate between the re-distribution disk 3100 and the first to third process groups 3600, 3610, 3 620. The two processing chambers disposed in the first to third processing groups 3600, 3610, and 3620 may be chambers for performing plasma processing. Additionally, any of the processing chambers can be a cooling chamber or an alignment device. In other embodiments, both of the two processing chambers disposed in any of the first to third processing groups 3 600, 3610, 3 620 may be cooling chambers or alignment devices. Accordingly, at least one of the plurality of processing chambers disposed in the first through third processing groups 3 600, 3610, 3 620 can be a cooling chamber and/or at least one alignment device. As described above, according to the present invention, the substrates before and after the processing are quickly exchanged in the substrate processing system, and the plurality of substrates are simultaneously or continuously processed in the substrate processing system, thereby increasing the processing rate of the system and increasing the substrate. Overall productivity. Since the substrate transfer apparatus that simultaneously loads and unloads the substrate is provided, the processing chamber is very easy to perform processing of a plurality of substrates. With -51 - 200818378 (49), the time for transferring the substrate is reduced, so productivity is increased. Significantly reduce the area and width of the system' so that equipment costs and placement costs can be minimized. The processing chamber, alignment chamber, and cooling substrate chamber overlap each other' to reduce the total bottom region of the substrate processing system. Therefore, the clean room can be narrower than the conventional one, and the cost of the air conditioner of the clean room can also be reduced. Furthermore, 'the transmission distance of the position for transferring the aligned substrate to the processing substrate is short, or the transmission distance from the processed substrate to the position of the cooling substrate is short φ, and it is not necessary to change direction, for example. Waiting for unnecessary operations' so that the time for transferring the substrate can be reduced and the yield of the substrate can be increased. The present invention has been described in terms of a preferred embodiment, but it is understood that the scope of the invention is not limited to the disclosed embodiments. Rather, the scope of the present invention is intended to include various modifications and modifications to the substrate transfer device and substrate processing system of the present invention, within the capabilities of those skilled in the art, using the presently known or future technologies and their equivalents. Alternative configuration. Therefore, the scope of the request should be interpreted in the broadest scope to cover all modifications and similar configurations of the φ section. BRIEF DESCRIPTION OF THE DRAWINGS The above and other features and advantages of the present invention will become more apparent from the <RTIgt; BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1A is a view showing an overall configuration of a substrate processing system according to a first embodiment of the present invention; Fig. 1B is a plan view showing a substrate processing system of Fig. 1; -52- 200818378 (50) Fig. 2 is an illustration of a setting A perspective view of a substrate transfer apparatus in a transfer chamber. Fig. 3 illustrates an example of a substrate transfer apparatus having upper and lower portions that are independently driven; Fig. 4 is a perspective view illustrating a configuration of a swivel plate arm; Figs. 5A to 5E Is a view continuously illustrating that the substrate transfer apparatus performs a substrate exchange operation; φ FIG. 6 illustrates an example of a substrate transfer apparatus having two drive shafts; FIGS. 7A and 7B are diagrams of a modification of the example substrate transfer apparatus, There is a spindle and a driving unit which are divided into a right portion and a left portion; FIG. 8 is a view illustrating a substrate transfer device using four separate spindles. FIGS. 9A and 9B are modification examples of the substrate transfer device having a spindle and a driving unit. Figure 1 is a plan view of a substrate processing system in accordance with a second embodiment of the present invention; Figure 11 is a view showing the flow of a substrate transported by the substrate transfer device. Figure 12 and Figure 13 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 14 is a view showing an overall configuration of a substrate processing system according to a third embodiment of the present invention, and FIG. 15 is a plan view of the substrate processing system of FIG. Figure 16 is a perspective view of a substrate transfer apparatus disposed in a transfer chamber; -53- 200818378 (51) Figs. 17A to 17D are perspective views illustrating first to fourth transfer members of the substrate transfer apparatus; Figs. 18A to 18D Is a view sequentially illustrating a substrate exchange operation performed by the substrate transfer apparatus; FIG. 19 is a view illustrating a transfer member having an extendable plate arm; FIG. 20 is a view illustrating a modification of the substrate processing system, which is used with the FIG. FIG. 21 is a plan view showing an overall configuration of a substrate processing system according to a fourth embodiment of the present invention; FIG. 22A to FIG. 22C are plan views illustrating a substrate processing system, The first, second, and third processing groups are illustrated in FIG. 21; FIG. 23A is a perspective view illustrating the first substrate transfer device disposed in the first transfer chamber; and FIG. 23B is exemplified in the second transfer chamber. Fig. 23C is a perspective view illustrating a third substrate transfer apparatus provided in the third transfer chamber; Fig. 24 is a perspective view illustrating the configuration of the swivel plate arm; Figs. 25A to 25E are continuously FIG. 26 is a cross-sectional front view illustrating a second processing group; and FIGS. 27A to 27C are views continuously illustrating a second substrate transfer apparatus performing a substrate exchange operation; FIG. Is a plan view illustrating a modification of the second treatment group; -54- 200818378 . [52] Figure 29 is a cross-sectional front view of another modification of the second treatment group of Example 75, wherein the alignment chamber and cooling are disposed on both sides; Figure 30 is a view illustrating a modification of the substrate processing system of the embodiment of the present invention; Figure 3 is a plan view showing a substrate processing system according to a fifth embodiment of the present invention; Figure 3 is a perspective view showing a substrate disposed in the transmission chamber of Figure 31; An example of a transmission device having an upper drive unit and a lower drive unit separated from each other; FIG. 34 is a perspective view illustrating a configuration of a swivel plate arm; and FIG. 35 is a substrate processing system exemplarily having no separate driven substrate transfer device Fig. 3 is a plan view illustrating a modification of the slewing plate arm, and Fig. 37 is a plan view showing a substrate processing system having a plurality of processing groups. [Description of main component symbols] 1〇〇: Indexing plate (equipment front-end module) 11 〇: Carrier 150: (rear) indexing plate 200: load lock chamber 2 1 0 : atmospheric pressure transmission robot 2 1 2 : End effector-55 - 200818378 (53) 250: (rear) load lock chamber 300: cooling chamber 400: transfer chamber 410: third substrate inlet 500: first processing chamber 5 1 0: first substrate inlet 520~ 526 : (front) substrate support table φ 522 : (rear) substrate support table 600 : second processing chamber 6 1 0 : second substrate inlet 620 to 626 : (front) substrate support table 622 : (re) substrate support table 7 0 〇: Plasma source 8 0 〇: Substrate transfer device 8 1 0 : Swing plate arm φ 8 1 2 : End effector 8 1 3 : Opening 8 1 4 : Support portion 8 1 5 : Entrance path 820 : Loading arm 822 : Unloading arm 830: Spindle 830a: Lower spindle (first spindle) 8 3 0b : Upper spindle (second spindle) -56- 200818378 (54) 8 3 0c : : Third spindle 8 3 0d : Fourth spindle 8 3 0e : fifth spindle 830f : sixth spindle 830g • • seventh spindle 8 3 Oh : eighth spindle 840 : drive unit wins 840a : lower drive unit (first drive unit) 840b: upper drive unit (second drive unit) 840c: third drive unit 840d: fourth drive unit 840e: fifth drive unit 840f: sixth drive unit 8 40g: seventh drive unit 8 4 Oh: Eight drive unit • 1100: indexing plate 1110: carrier 1200: load lock chamber 1210: atmospheric pressure transfer robot 1300: cooling chamber 1400: transfer chamber 1402: front side 1410: third substrate inlet 1500: first processing chamber - 57 - 200818378 (55) 1510 : First substrate inlet 1 5 20 : Substrate support table 1 5 22 : Substrate support table 1 6 00 : Second processing chamber 1610 : Second substrate inlet 1 6 2 0 : Substrate support table 1 6 22 : Substrate support table • 1700 : Plasma source 1 800 0 : Substrate transfer device 1 8 00a: Transfer chamber 1810a = First transfer member 18 10b : Second transfer member 18 10c : Third transfer member 1810d •• Four transmission members 1810a, 1 : Transmission members • 1820 : Main shaft 1 8 3 0 : Drive unit 1 8409 : Swing arm 1 840 : Loading arm (slewing arm) 1841-1 : First extendable arm Γ 841-2 : Second extendable plate arm 1841-3: third extendable plate arm 1 842 : end effector 1843 : opening 200818378 (56) 1 844 : support portion 1 8 4 5: inlet path 1 8 50 : unloading arm (swing plate arm) 2 0 1 0 : substrate processing system 2100 : indexing disk 2 1 1 0 : carrier 2200 : load lock chamber 0 2210 : atmospheric pressure transfer robot 2400a : first transfer chamber 2400b : second transfer chamber 2400c : third transfer chamber 2410 : Three substrate inlet 2412: third substrate inlet 2414: third substrate inlet 2500a: first processing chamber φ 2500b: second processing chamber 2510a: first substrate inlet 25 10b: second substrate inlet 2522: substrate support table 2600a: first Alignment chamber 2600b: second alignment chamber 2600c: first alignment chamber 2600d: second alignment chamber 2610a: first substrate inlet - 59 - 200818378 (57) 2610b: second substrate inlet 2640: rotary chuck 2640: rotary chuck 2650 : Detection unit 2660 : Lifter 2700 : Cooling chamber 27 10 : First substrate inlet wins 2800a : First substrate transfer device 2800b : Second substrate transfer device 2800d : Second substrate transfer device 2810 : Swing plate arm 2812 : End effect 2813 : Opening 2814 : Support 2815 : Inlet path • 2 8 20 : Loading arm 2 8 22 : Unloading arm 2 83 0 : Spindle 2 8 40 : Drive unit 3100 : Indexing plate 3 110 : Carrier 3 200 : Load lock chamber 3210 : Atmospheric Pressure Transfer Manipulator 3220: Track-60- 200818378 (58)
3 23 0 :軌道 3 3 0 0 :傳輸室 3 3 1 0 :第一基板入口 3 320 :第二基板入口 3 3 3 0 :第三基板入口 3400 :第一處理室 3 4 0 2 :基板支撐台 3410 :第二處理室 3412 :基板支撐台 3 5 0 0 :基板傳輸設備 3 5 00a :基板像踰設備 3 5 00a :基板傳輸設備 3 5 1 0 :迴轉板臂 3 5 1 0 5 : ( L型)迴轉板臂 3 5 1 2 :末端效應器 3 5 1 3 :開口 3 5 1 4 :支撐部 3 5 1 5 :入口路徑 3 520 :裝載臂 3 522 :卸載臂 3 5 3 0:主軸 3 5 3 0b :上主軸 3 5 3 0 a :下主軸 3 5 4 0 :驅動單元 200818378 (59) 3 540b :上驅動單元 3 5 4 0 a :下驅動單元 3 600 :第一處理組 3610 :第二處理組 3620 ••第三處理組 S10 : 箭頭 S20 : 箭頭 • S30 : 箭頭 S 4 0 : 箭領 S50 : 箭頭 S60 : 箭頭 S70 : 箭頭 S80 : 箭頭 S100 z箭頭 S1 10 =箭頭 φ S120 =箭頭 S 1 30 :箭頭 S210 :箭頭 S220 z箭頭 S23 0 :箭頭 S240 :箭頭 S25 0 =箭頭 S260 z箭頭 S270 :箭頭 200818378 (60) S280 :箭頭 a :第一處理,1 b :第二處理、 b ’ :第二處理 c :第三處理3 W2 :(已處ij W1 :(未處 組 1過的)基板 ί的)基板3 23 0 : Track 3 3 0 0 : Transmission chamber 3 3 1 0 : First substrate inlet 3 320 : Second substrate inlet 3 3 3 0 : Third substrate inlet 3400 : First processing chamber 3 4 0 2 : Substrate support Stage 3410: second processing chamber 3412: substrate support table 3 500: substrate transfer device 3 5 00a: substrate image over device 3 5 00a : substrate transfer device 3 5 1 0 : swivel plate arm 3 5 1 0 5 : ( L-shaped) swivel plate arm 3 5 1 2 : end effector 3 5 1 3 : opening 3 5 1 4 : support portion 3 5 1 5 : inlet path 3 520 : loading arm 3 522 : unloading arm 3 5 3 0: main axis 3 5 3 0b : Upper spindle 3 5 3 0 a : Lower spindle 3 5 4 0 : Drive unit 200818378 (59) 3 540b : Upper drive unit 3 5 4 0 a : Lower drive unit 3 600 : First processing group 3610 : Second processing group 3620 •• Third processing group S10: Arrow S20: Arrow • S30: Arrow S 4 0 : Arrow collar S50: Arrow S60: Arrow S70: Arrow S80: Arrow S100 z Arrow S1 10 = Arrow φ S120 = Arrow S 1 30 : arrow S210 : arrow S220 z arrow S23 0 : arrow S240 : arrow S25 0 = arrow S260 z arrow S270 : arrow 20081837 8 (60) S280: arrow a: first processing, 1 b: second processing, b ': second processing c: third processing 3 W2: (already in ij W1: (not in group 1) substrate ί Substrate
W :基板W : substrate
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