TW200818261A - Method of patterning an anti-reflective coating by partial etching - Google Patents

Abstract

A method of patterning a thin film is described. The method comprises forming a thin film to be patterned on a substrate, forming an anti-reflective coating (ARC) layer on the thin film, and forming a mask layer on the ARC layer. Thereafter, the mask layer is patterned to form a pattern therein, and the pattern is partially transferred to the ARC layer using a transfer process, such as an etching process. Once the mask layer is removed, the pattern is completely transferred to the ARC layer using an etching process, and the pattern in the ARC layer is transferred to the underlying thin film using another etching process.

Description

200818261 IX. INSTRUCTIONS: • The technical field of the invention relates to a method for patterning a film on a substrate, in particular, using an anti-reflective coating (ARC) that is partially inspected. A method of patterning a film on a substrate. - [Cross-Reference Related Application]: This application is related to the US Patent Application No. under review.

• U/534,261, case name “METHOD FORDOUBLE IMAGING A DEVELOPABLE ANTIREFLECTIVE COATING”, firm case number TTCA-157 ‘Represented on the same day; US Patent Application No. under review

11/534,365, the title of the document "METHOD FOR DOUBLE ΡΑΓΊΈΚΝΙΝΟ A DEVELOPABLE ANTI_REFLECTIVE COATING", the firm's case number TTCA-158 'represented in the same name; the US patent application number η /ΧΧΧ in the review, ΧΧΧ ' case name METHOD OF PATTERNING A DEVELOPABLE ANTI-REFLECTIVE COATING BY PARTIAL DEVELOPING", firm case number TTCA-160, submitted to the same party; and US patent application under review

Case No. 11/XXX, XXX, the title of the document "METHOD FOR DOUBLE PATTERNING ATHINFILM", the firm's case number TTCA_16 Bu Tishen on the same day. The contents of these applications and the contents are hereby incorporated by reference. [Prior Art] In the material processing, the pattern etching method includes applying a thin layer of a photosensitive material (for example, photoresist) to the upper surface of the substrate, and then patterning the substrate to provide a pattern to the lower layer on the substrate during the etching process. A reticle for the film. Patterning of the photosensitive material typically involves exposure using, for example, a photolithography system, an initial mask (and associated optics) of the illumination source via the photosensitive material, followed by a developing solvent to remove the photosensitive material (as in positive form) Irradiated or non-irradiated areas in the case of photoresist (as in the case of negative photoresist). Also, the photomask layer can comprise a plurality of sub-layers. , 5 200818261 Once the pattern is transferred to the underlying film, the material properties of the film need to be shifted. For example, the film can comprise a dielectric film that is low: loss = low dielectric constant (iv), and the dielectric film can be metallized by back-end-of-line (BE0L). This is "f = porous low-k dielectric material and porosity 1〇w_k material ^ $ to = , = form this - _ and remove the necessary mask layer when tearing the mouth ' 虞 移 移 移 昼 昼The invention relates to a method for patterning a film on a substrate. According to an embodiment, a method using anti-reflection coating will be formed in the white layer above the layer. Go to the arc layer, then remove the mask layer. After that, κ etch process to completely transfer the pattern to the ARC layer. Guard 3' describes the method of patterning the film on the substrate and used for the image (ARr Sheng The anti-reflective coating formed on the film by the 溥 溥 溥 由 由 由 FI FI 、 、 、 、 、 、 ; ; ; ; ; ; ; ; ; ; ; ; ; ; A A A A A A A A A A A A A A A A A Less than the ARC VIII is partially shifted by the pattern iRC = = casting; by Nahai layer to complete the transfer of the pattern 私, and privately transferring the pattern to the film while substantially consuming the ARC layer. [Embodiment] The specific details are different from the actual ones. However, it should be understood that the present invention can be used in other parts of 200818261' The word is specified in several figures ^ from the beginning to the end of the figure 1 to 1 (four) shows - according to the prior art of the graphical representation of the lithography structure just including the axis on the substrate no on the substrate 110 formed on the substrate 110 ( For example, a dielectric organic planarization layer (0PL, an organic reflective film (ARC), and a photoresist layer 15 formed on the ARC layer 14A. The second image system exposes the photoresist 150 to the first image in the figure, 'developing the first image pattern 152 in the developing solvent, 厣二第-_154. Using the dry etching process to transfer the photoresist ^= ^4. To the lower floor, to form the province = port shown in Figure 1E, remove the photoresist layer 15〇' to add the second photoresist layer 16 to the 胤^16? / use the photolithography system to the second The photoresist layer 160 is exposed to the second image, and then in FIG. 1G, the second image pattern (6) is shot to form a second pattern 164 in the second photoresist layer 160. The second pattern 164 140 in the second photoresist layer 160 is formed to form a second ARC pattern 144, as shown in Figure m.

The second photoresist layer 160 is removed, and the first and second ARC 142 and 144 are transferred to the lower layers (10) L 124 and f M as shown in FIG. 12G to form the first feature pattern 122 and the second feature map shape / w, as shown in FIG. ij, once the transfer pattern is completed to the film i2, the arc 2 is only partially consumed, @this's left In addition to the remaining 〇ρ, the person has noticed that the __ 胤 layer requires a flash etch, which is valuable to the material properties of the underlying film 120. For example, S 'Thin Moon Mo 120 can contain a low dielectric constant (that is, a low dielectric low dielectric constant ultra_low dielectric film, the dielectric film can be used for electronic back-end process (back_end_of_line, 拙0L) metallization These materials can include non-porous low dielectric constants and porous low dielectric constant materials that are susceptible to damage when exposed to 200818261 to remove the chemicals required for the ARC layer 140 - such as dielectric Reduction in constants, moisture absorption, residue formation, etc., ^ "An alternative approach is to reduce the thickness of the ARC layer 14 , so that the arc layer 140 is consumed on the babe that moves the pattern to the U0 of the film U0. The thickness of the ARC layer 140 is determined by the requirements presented for providing anti-reflective properties during the patterning of the photoresist layer. For example, when the ARC layer is designed to cause electromagnetic (em) electro-magnetic radiation When destructive interference with reflected EM radiation, the thickness of ARC | M〇 (1) should be selected as the light of the incident ship during the imaging of the photoresist layer: wavelength multiple (ie r~λ /4,3 λ /4,5 λ /4, etc.) In addition, for example And a, when the ARC layer is designed to absorb into the wEM radiation, the thickness (1) of the ARC layer 140 should be chosen to be thick enough to allow absorption of the incident ship. In either case, the person has found that the current In terms of geometry, the minimum thickness required to provide anti-reflective properties still results in partial consumption of the ARc reed after the transfer of the pattern to the underlying film. Thus, Figures 2A through 2K and Figure 3 illustrate the invention in accordance with the present invention. A method of patterning a substrate in an embodiment. The method is illustrated in flow chart 500 and begins at 51 A, which forms a lithographic structure 2 comprising a film stack formed on a substrate 210. a film 22G on the substrate 21G, an omission layer (OPL) 230 formed on the film 22Q, an anti-reflective coating formed on the optional sail 23 (or on the film 22, if the helmet 23 is present) The ARC) layer 24 is formed on the ARC layer 24 and the photoresist layer 25A. Although the film stack is shown as being formed directly on the substrate 21, an additional layer may exist between the film and the substrate 21A. Words, in a semiconductor, wide, 曰 can use the interconnect level to form a film stack And the interconnect level can be formed over the other-interconnect level on the substrate 21. Alternatively, the film 22() can comprise a layer of material or a plurality of layers of material. For example, the film 22 can be packaged The bulk material layer 220 may comprise a conductive layer, a non-conductive layer, or a semi-conductive layer. The thin boat 22 may contain a material layer of the following materials: · metal, metal oxide, metallide, metal oxynitride Material, gold salt, metal material, dream, polycrystalline stone & 8 200818261 夕口卜, Xingming ^ two emulsified stone eve, nitrite eve, carbonized stone eve, nitrous oxide eve and so on. Alternatively, dielectric T may comprise a low dielectric constant (i.e., lGW_k) or ultra low dielectric layer having a lower than dioxo dielectric constant and an electrical/digital range of from 3.8 to 3.9). More precisely, it is said that the f constant of this is, for example, the range of dielectric constants from h6 to 3.7. The tantalum layer I comprises at least an organic, inorganic, or inorganic-organic hybrid material. These dielectric layers may be porous or non-porous. For example, the 匕 layer includes the use of CVD techniques to deposit inorganic, Weixian materials – such as 厌=切财_魏. This is the version of Black Diamond® CVD Organic Glass (ass SG, 〇rgan〇silicate g on ass) or the commercially available c〇ral8 cVD film from N〇vellus systems, Inc. Alternatively, the "electric layer" may comprise a porous inorganic-organic hybrid film composed of a single phase, for example, a oxidized cerium matrix having a CH3 bond which can prevent the film from being fully dense during hardening or deposition; or These dielectric layers may comprise (==) a porous inorganic/organic hybrid membrane composed of two phases, for example, a non-doped oxidized stone base matrix having an organic material (for example, pores of the pores of the pores), which may be hardened. Decomposition and evaporation during processing. Alternatively, these dielectric layers may include inorganic, phthalate-based materials (eg, sesquiterpene oxide (HSQ), deposited using spin-on dielectric (SOD) technology. Hydrogen silsesquioxane) or mercapto sesquioxanes (MSq, silsesquioxane). Examples of such films include F〇x® available from D〇w corning.

HSQ ‘ Dow Coming commercially available xlK Porous HSQ and JSR

jSRLKD_51〇9, commercially available from Microelectronics, or these dielectric layers may comprise organic materials deposited using SOD technology. Examples of such films include d〇w

Chemically available SiLK small SiLK_J, SiLK_H, SiLK_D and porous SiLK® semiconductor dielectric resins and Honeywell's commercially available GX_3TM & GX-3PTM semiconductor dielectric resins. The film 220 can be formed by vapor deposition, and the vapor deposition technique can be, for example, chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), atomic layer deposition (PECVD). ALD, atomic layer deposition), plasma enhanced ALD (PEALD), physical vapor deposition (PVD), or ionized PVD (ionized PVD), or spin-on technology, such as T 〇ky〇Electr〇n Limited (TEL) Commercially available cleaning track ACT 8 SOD (spin-on dielectric), ACT 12 SOD and Lithius coating system. Cleaning ACT 8 (200mm), ACT 12 (300mm) and Lithius (300mm) coating systems provide coating, baking and curing tools for s〇D materials. The track system can be designed to handle substrates of sizes lmm, 200mm, 300mm and larger. Familiar with spin-on technology and vapor deposition technology Two techniques are well known to other systems and methods for forming thin films on substrates. The OPL230 may be selected to include a photosensitive organic polymer or a carbon compound. For example, the photosensitive organic polymer may be a polyacryl resin, an epoxy resin, a phenol resin, a polyamide resin, a polyimide resin, an unsaturated polyester resin, a polyphenylene ether resin, a polyphenylene sulfide. Resin, or benzocyclobutene (BCB). These materials can be formed using spin coating techniques. The ARC layer 240 has material properties suitable for use as an anti-reflective coating. The ARC layer 240 can include organic or inorganic materials. For example, the ARC layer 24A may comprise amorphous carbon (C), fluorocarbon (FC), or a material having the structural formula r:c:h:X, wherein R is selected from the group consisting of ruthenium, osmium, and boron. a group of tin, iron, titanium, and combinations thereof, wherein X is absent or selected from the group consisting of one or more of oxygen, nitrogen, sulfur, and fluorine. The ARC layer 240 can be fabricated to achieve an optical range of refractive index n of about 1.40 < η < 2·60 and an extinction coefficient k of about 〇 〇 i < k < 〇 78. Or fold

At least one of the rate of incidence and the extinction rate may be graded (or changed) with the thickness of the ARC layer 240. Further details are provided in U.S. Patent No. 6,316,167, entitled "TUNABLE VAPOR DEPOSITED MATERIALS AS ANTIREFLECTIVE COATINGS, HARDMASKS AND AS COMBINED ANTIREFLECTIVE COATING/HARDMASKS AND METHODS OF FABRICATION THEREOF AND APPLICATION THEREOF, which is transferred to internati〇 Nai Business Machines 200818261

Corporation, incorporated herein by reference in its entirety. In addition, the formation of the ARC layer 240 may use a vapor deposition technique such as chemical vapor deposition (CVD) or plasma enhanced CVD (PECVD). For example, PECVD can be used to form the ARC layer 240, as described in US Patent Application No. 644,958, entitled "METHOD AND APPARATUS FOR DEPOSITING MATERIALS WITH TUNABLE OPTICAL PROPERTIES AND ETCHING CHARACTERISTICS, ▼' In the middle of August 21, 2003, the full introduction is hereby incorporated by reference. The 240 optical properties (e.g., refractive index) of the ARC layer can be selected to substantially match the optical properties of the underlying layer or layers. For example, for example, the lower layer of the non-porous dielectric film needs to reach a refractive index (n) ranging from 1·4<η<2·6; for example, the lower layer of the porous dielectric film needs to reach the range of 1.2·< η < 2 · 6 refractive index (11). The photoresist layer 250 may comprise a 248 nm (nano) photoresist, an I93 nm photoresist, a 157 nm photoresist or an extreme ultraviolet (EUV) photoresist. The obstruction system can be used to form the photoresist layer 250. For example, the track system may include a clean track ACT 8, ACT 12 or Uthius photoresist coating commercially available from T〇ky〇Elect· Limited (TEL). “As shown in the figure, % respectively, the layer 25G is patterned. And the visible resistive layer. We use a dry or wet photolithography system to apply a leg exposure. The image pattern can be formed by using any quilt system or a sweeping lithography system. For example, A ^

^ ^ f1 (33〇〇North lst street? San InC Photolithography, An CA 95m) Commercially available image open/2°5f H 'Developed exposed photoresist layer 250 to remove denier The ruthenium pattern 252 is formed in the photoresist layer 25A to form a reticle to remove the developing solvent in the developing (4) (for example, the processing may include π Hz, 死). For example, 200818261, the track system can include Tokyo Electron Limited (TEL) commercially available, main, silk... ACT8, ACT12 or Lithius photoresist coatings and development systems. In 530 and as shown in Figure 2D, the reticle pattern 254 is partially shifted by the ARC layer 240 to form the ARC pattern 242. The ARC pattern 242 extends to the depth of the thickness of the ARC layer 240. For example, the mask pattern 254 portion is moved to the lower / 240 using last name processing (eg, processing or wet etch processing). Additionally, by way of example, a dry plasma etch process or a dry process: process moves the reticle pattern 254 portion to the lower ARC layer. The reticle pattern 254 is transferred to the lower ARC layer 24 以 by =, by using an anisotropic dry etching process, reactive ion etching process, assisted rice processing, ion milling (i 〇nmining), or embossing (i plus or a combination of two or more of the above. ~ buried) In 540, the photoresist layer 250 is removed. For example, the first method of removing may use wet stripping In addition to the processing, the dry plasma ashing treatment, or the two ashing treatment. Thereafter, as shown in FIG. 2E, a photoresist layer 260 is formed on the ARC layer 240. The second photoresist layer 260 is selected as the coin. Contains 248nm (nano) photoresist, 93nm 弁=7nm photoresist or EUV photoresist. It can make the channel to form the second photoresist. For example, the system can contain T〇ky0 Electron Limited ( TEL) The clean track of ACT 8, ACT 12, or Lithius photoresist coating and the familiar surface of the spin-on resistor are well known. Other methods and methods for forming a photoresist film on a substrate are well known. As shown in FIG. 2F and FIG. 2G respectively, the second photoresist pattern 260 is selected according to the second image pattern 262, and the second photoresist layer 2 to be exposed is selected. 6 () is performed to select the second image pattern area, and the second photoresist layer 260 is selected to be used as the remote mask pattern 264. As shown in FIG. 2A, the second mask pattern 264 is selected to be partially shifted. The ARC layer 240 is transferred to form an optional second ARC pattern 244. The optional shape 244 extends to a thickness less than the thickness of the ARC layer 240. Thereafter, as shown in ^^12 200818261, the second photoresist layer 260 is selected for removal. The lower arc shape can be transferred to the double_section to:, = the resist layer can be imaged and developed, and the same can be used. The photoresist layer can be applied to the ARC layer after being partially transferred to the lower ARC layer. , - in the middle and as shown in Figure 2 'complete the transfer of ARC graphics 242 and iP flute-ARC graphics 2 side ARC layer ·, while making ARc ^ ϋ and · ^ * Lu, can use side processing (for example Can be dry:: Seven examples to use ARC graphics 242 and select the second ARC diagram 4)

The thickness of layer 240. In addition, with the 丨 丨 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝 贝^实干式电黎#刻 ARC m 242 „ ARC^'^ ^ Etching and the thickness of the ARC layer 240 is reduced. A thousand % 246 is

In 560 and as shown in FIG. 2K, the ARC and the film 22 can be formed by using a cat 々 a pattern 242 and a second ARC pattern 244 = etching to form the feature pattern 222 and the square ^^ Existence) During: or multiple side processing, view /2:; ^^ Figure = 4. No. One or more etching processes may include wet or square. Dry rice processing can include dry plasma remnants. Thereafter, OPL230 (if present) can be removed. 4 dry non-electric (four) insects can be replaced by the skilled person, many modifications can be made in the examples. For example, the advantage of the positive type developable photoresist and developable ARC layer. Therefore, ° ^ ^ = is used within the scope of the present invention. Any such modifications should include [Simplified Description] 13 200818261 In the following figures: Items 1A to 1J illustrate a conventional technique for patterning a film on a substrate; / Figures 2A to 2K are illustrated A patterning method of a film on a substrate according to an embodiment of the present invention; and FIG. 3 is a flow chart showing a patterning method of a film on a substrate according to an embodiment of the present invention. [Major component symbol description] • 1 〇〇 lithography structure 110 substrate 120 film 122 first feature portion pattern 124 second feature portion pattern 130 organic planarization layer (0pL, organic planarization layer) 140 anti-reflective coating (arc) layer 142 First ARC graphic 144 second ARC graphic 150 photoresist layer 152 first image graphic 154 first graphic 160 second photoresist layer - 162 second image graphic 164 second graphic 200 lithography structure 210 substrate 220 film 222 first feature Part graphic 224 second feature portion graphic 230 organic planarization layer (〇pl) 14 200818261 240 anti-reflective coating (ARC) layer 242 ARC pattern 244 second ARC pattern 246 flat field 250 first photoresist layer 252 first image pattern 254 light Cover pattern 260 second photoresist layer 262 second image pattern 264 second mask pattern 500 flow chart 15

Claims (1)

200818261 X. Patent Application Range: 1. A method for patterning a film on a substrate, comprising: preparing a film laminate on the substrate, the film laminate comprising: the film formed on the substrate, formed on the film An anti-reflective coating (ARC), and a photomask layer formed on the ARC layer; forming a pattern in the mask layer; by transferring the pattern to a depth less than a thickness of the ARC layer, After partially shifting the pattern to the ARC layer; after the step of removably transferring the pattern to the ARC layer, removing the mask layer by etching the ARC layer to complete the transfer of the pattern to the ARC The pattern is transferred to the film while substantially consuming the ARC/.卞t, as in the thin filming method on the substrate of the Chinese patent, the process of forming a pattern in the mask layer includes forming a pattern in a photoresist layer. The step of forming a pattern in the mask layer of the second aspect of the patent application scope includes a #(四)_ method in which a photolithography system is used to develop the crucible in an image pattern. a photoresist layer for forming the image pattern on the g-resist layer; and 4. a method for partially transferring the pattern to the ARC layer= on a substrate according to the above clause of the patent application, wherein etching, Or a combination thereof. Including dry etching, wet type 5. The basis of the fourth aspect of the patent application = the ground transfer method, the dry non-plasma etching, or a combination thereof.仃 dry plasma etching, 16 200818261 6. As on the substrate of the application of the fourth item f, the part of the method of transferring the pattern to the ARC layer, t (anisotropic^Mimm ^ - or dry Lai Treatment, or a combination thereof. & Wet-wet side treatment, formation of ^ shape _, where resistance ~ resistance, or EUV photoresist, the shape of the wheel is deleted, which (OPL orsanicnln." is included in 3 Forming an organic planarization layer on the film, and forming the ARC layer on the 0PL. The patterning method of the film on the item, the phenol resin, the poly-fat surface run, forming a polyacrylic acid Vinegar resin, epoxy resin, or its or benzene ring butyl (b, café, butene) includes: Shishen #Specialize the thinning method on the substrate of the ninth item, more graphic graphics to the film Before the step, the 17 200818261 in the ARC layer is transferred. 12. The graphic of the nth item of the patent application scope to the step (4) of the sail is engraved into the OPL. The graphic is transferred to the ARC layer. Graphical method, graphic etching, including the film on the substrate of claim 9 "A ^ 丄 犋 犋 犋 犋 犋 犋 犋 犋 犋 犋 犋 犋 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形 图形The step substantially consumes the 15. The step of forming the ARC layer on the substrate of the patent range w includes forming an organic layer, 16. a computer readable medium containing program instructions, for execution, A patterning system performs the following steps: a patterning method of the film, an inorganic layer, or both, which control the system force by the edge. ^ Preparing a stack on the substrate, the film stack comprising the base formed thereon a film, an anti-reflective coating (ARC layer) formed on the film, and a mask layer formed on the ARC layer; forming a pattern in the mask layer; by shifting the pattern to less than the ARC a depth of the layer thickness to partially transfer the pattern to the ARC layer; after the step of partially transferring the pattern to the ARC layer, removing the remaining portion of the mask layer; Finishing transferring the graphic to the ARC layer; and transferring the graphic to the film while substantially eliminating The eleven ARC layer, FIG formula: 18