TW200817840A - Positive type photosensitive resin composition containing polymer having ring structure - Google Patents

Abstract

To provide a positive photosensitive resin composition which has high sensitivity and is reduced in film thickness reduction in unexposed areas and which, after film formation, retains a high transmission and a film thickness even through high-temperature burning or treatment with a liquid resist stripper and does not crack during ITO sputtering; and a cured film suitable for use as a film material for various displays. The positive photosensitive resin composition comprises: ingredient (A) which is an alkali-soluble acrylic polymer having at least one of carboxy and phenolic hydroxy and at least one of hydroxy other than phenolic hydroxy and amino having active hydrogen and having a number-average molecular weight of 2,000-30,000; ingredient (B) which is an alkali-soluble resin having a ring structure in the backbone; ingredient (C) which is a compound having a vinyl ether group; ingredient (D) which is a compound having a blocked isocyanate group; ingredient (E) which is a photo-acid generator; and a solvent (F). The cured film is obtained from the composition.

Description

[Technical Field] The present invention relates to a positive photosensitive resin composition and a hardened film obtained thereby. More specifically, the present invention relates to a positive photosensitive resin composition and a cured film thereof for use in a display material, and various materials using the cured film. [Prior Art] Generally, a display element such as a thin film transistor (TFT) type liquid crystal display element or an organic EL (electroluminescent) element is provided with an electrode protective film, a planarization film, an insulating film, and the like which are formed by a pattern. As a material for forming these films, a photosensitive resin composition which is required to have a small number of pattern shapes and a sufficient flatness in a photosensitive resin composition has been widely used in the past. In addition, the above-mentioned films have various steps such as excellent heat resistance, solvent resistance, long-time firing resistance, metal plating resistance, and the like, and good adhesion to the substrate, and have a purpose of use. In addition to the wide process margin for forming patterns, conditions such as high sensitivity and high transparency, and less film unevenness after development are required. Therefore, from the viewpoint of these required characteristics, a resin containing a naphthoquinonediazide compound has been conventionally used as the photosensitive resin composition. However, among the required characteristics of these photosensitive resin materials, sensitivity is one of important characteristics. The sensitivity is improved by industrial production such as display components, and the production time can be greatly shortened. Therefore, the amount of liquid crystal display -4- 200817840 ♦ is significantly increased to the current state, and sensitivity is one of the most important characteristics required for this type of photosensitive resin material. However, the conventional photosensitive resin material containing the above naphthalene-doped azide compound is not very satisfactory on the sensitivity side. For the polymer in the material, the sensitivity can be improved by increasing the solubility to the alkali developing solution, but this method is limited, and the unexposed portion is dissolved to cause a decrease in the residual film rate, which is for a large display. The substrate is a cause of film unevenness. Therefore, several patent applications have been filed for the purpose of high sensitivity of photosensitive resin materials. For example, a radiation sensitive resin composition of an alkali-soluble resin and at least one specific polyhydroxy compound and a derivative thereof has been proposed (for example, see Patent Document 1). However, the proposed material has problems such as preservation stability due to the higher symmetry of the photosensitive agent. Further, a positive-type radiation-sensitive resin composition containing an alkali-soluble phenol resin and a radiation-sensitive compound (for example, refer to Patent Document 2), and a positive photosensitive resin containing a specific alkali-soluble resin and a quinonediazide compound have been proposed. (for example, refer to Patent Document 3). However, when these phenolic resins for lacquers are used as the adhesive polymer, they have transparency problems and stability problems during long-time firing. As described above, it has been extremely difficult to develop a photosensitive resin composition which satisfies other characteristics and has a high level of sensitivity, and it is difficult to obtain a satisfactory photosensitive resin composition by merely combining the prior art. In addition, a conventional photosensitive resin material containing a naphthoquinonediazide compound is generally used for photobleaching (photobleaching 200817840) to prevent coloration and transparency of a cured film caused by a naphthoquinonediazide compound after exposure and development. However, even after the photobleaching step, the obtained film is calcined at a high temperature of about 25 ° C to lower the light transmittance and cause coloration, and thereby at a lower temperature, for example, at 23 ° C In the long-term firing, the light transmittance is also lowered (coloring), and even if it is treated with a drug such as an amine-based solution of the photoresist stripping solution, the light transmittance is lowered to deteriorate the transparency, and the naphthoquinone is contained. The conventional photosensitive resin material of the diazide compound has problems of heat resistance and chemical resistance (for example, refer to Patent Document 4). On the one hand, as a photosensitive material having high sensitivity and high resolution, a chemically amplified photoresist has been developed in the past. Developed as a photoresist for semiconductors, the past chemically amplified photoresist ratio is more suitable for short-wavelength light sources (KrF, ArF), which can form fine patterns, but if used at high temperatures such as film hardening, or photoresist In the presence of the stripping solution, the bonding portion of the protective group or the thermal crosslinking portion of the ether bond is easily decomposed, so that heat resistance and chemical resistance are remarkably lowered, and it is almost impossible to use it as a permanent film (for example, refer to Patent Document 5). Moreover, in order to achieve thermal hardening, even if the crosslinking of epoxy or amine-based plastics is introduced into the chemically amplified photoresist, the exposed portion is exposed by the photoacid generator (PAG) in the photoresist. Crosslinking causes a new problem such as the disappearance of the dissolution contrast with the unexposed portion, and the introduction of the chemically amplified photoresist at the intersection is difficult to carry out. Further, these materials are thermally cured on the formed pattern, and then formed on the film by sputtering using a metal such as ITO, Al or Cr. It is known that when acrylic acid is generally used, ITO which is sputtered at a high temperature is liable to cause cracks in the film. Therefore, a material having high-sensitivity and high heat-resistant transparency is required to have sputtering resistance at a high temperature. [Patent Document 1] Japanese Laid-Open Patent Publication No. Hei No. Hei 8- No. Hei. Japanese Patent Publication No. 5 075 1 99 [Invention] The present invention has been made in view of the above, and the first object is to provide a sufficiently high sensitivity without observing at the time of development. The unexposed portion does not actually have a positive photosensitive resin composition which forms a pattern film. The second problem is to provide a cured film which can maintain a high transmittance in the treatment of a high-temperature firing or a photoresist stripping solution, and which does not cause cracks during ITO sputtering, and a positive photosensitive resin which can obtain such a cured film. Composition. In other words, as a first aspect, a positive photosensitive resin composition containing the following components (A), (B), (C), (D), and (E) solvent is contained. (A) component: a group having at least one group selected from a carboxyl group and a phenolic hydroxyl group, and at least one group selected from a hydroxyl group other than a phenolic hydroxyl group and an active hydrogen group, and having a number average molecular weight of 2,000 to 30,000. Alkali-soluble acrylic polymer (B) Component: a soluble resin having an aromatic ring or an alicyclic structure in the main chain (C) Component: a compound having two or more vinyl ether groups in one molecule (D) Component: 1 molecule Compound (E) having two or more blocked isocyanate groups 200817840: Photoacid generator (F) Solvent as a second viewpoint, and (B) component selected from polyimine and polyimine precursors A positive photosensitive resin composition described in the first aspect of the group of alkali-soluble resins. In the third aspect, the number average molecular weight of the alkali-soluble resin of the component (B) is 2,000 to 30,000. The positive photosensitive resin composition described in the first aspect or the second aspect. In the fourth aspect, the component (B) is a positive photosensitive resin group composition according to any one of the first aspect to the third aspect, which is an alkali-soluble resin having an alkyl group substituted with a fluorine atom. In the fifth aspect, the component (B) is an alkali-soluble resin containing a polyimine, and the first aspect to the content of the polyamidene is contained in an amount of 0.5 to 20 parts by mass based on 100 parts by mass of the component (A). A positive photosensitive resin composition as described in any one of the above aspects. In a sixth aspect, the component (B) is an alkali-soluble resin containing a polyimide precursor, and the polyamide component precursor is contained in an amount of 5 to 1 part by mass based on 100 parts by mass of the component (A). The positive photosensitive resin composition according to any one of the first aspect to the fourth aspect. In the seventh aspect, the component (E) is a positive photosensitive resin composition according to any one of the first to sixth aspects of the present invention. In the eighth aspect, the positive photosensitive resin composition as described in any one of the above-mentioned items of the above-mentioned. In the case of the (H) component, the fluorine-based surfactant is further contained in the positive photosensitive resin composition as described in any one of the first aspect to the eighth aspect. The cured film obtained from the positive photosensitive resin composition of any one of the first aspect to the ninth aspect is used. The interlayer insulating film formed by the cured film of the first aspect is the first aspect. The microlens formed by the cured film of the first aspect is the first aspect. The positive photosensitive resin composition of the present invention has a sufficiently high sensitivity, and the film of the unexposed portion is not observed to be reduced at the time of development, and in fact, a pattern-free film can be formed. Therefore, there is provided a cured film which maintains high transmittance even when it is fired at a high temperature or treated with a photoresist stripping solution, and which does not cause cracks during sputtering. BEST MODE FOR CARRYING OUT THE INVENTION The photosensitive resin composition of the present invention contains a soluble acrylic polymer of the component (A), an alkali-soluble resin of the component (B), and a compound having a vinyl ether group of the component (C). (D) a compound having a blocked isocyanate group, a photoacid generator of the component (E), and (F) a solvent, and an interface containing an amine compound and/or a component (H) of the component (G) as required The composition of the active agent. The details of each component are described below. &lt;Component (A)> 200817840 (A) is a component having at least one selected from the group consisting of a residue and a phenolic hydroxyl group, and at least one hydroxyl group other than a phenolic hydroxyl group and having an active hydrogen in the structure of the polymer. The group of amino groups and the polystyrene-equivalent number average molecular weight (hereinafter referred to as number average molecular weight) are 2,000 to 30,000 alkali-soluble acrylic polymers. At least one selected from the group consisting of the above-mentioned carboxyl group and a phenolic hydroxyl group is a reaction between a compound having a component (C) and a compound of the component (C) at a temperature raised to be heated. Together, the base of the photoresist film is formed. Further, at least one selected from the group consisting of a hydroxyl group other than the phenolic hydroxyl group and an amine group having an active hydrogen is a thermally crosslinked body of the component (A) and the component (C) (thermal crosslinking in the exposed portion) The decrosslinked body further dissociated from the body is a base which is formed by crosslinking a blocked isocyanate group with a compound which is dissociated in a block portion with a compound of the component (D) described later at an elevated temperature to form a film. Further, an amine group having an active hydrogen means a primary or secondary amine group which releases a proton having high reactivity. Therefore, the indoleamine gene does not have an active hydrogen and is therefore not equivalent to an amine group having an active hydrogen. The polymer of the component (A) is only an alkali-soluble acrylic polymer having such a structure, and the skeleton of the main chain of the polymer constituting the polymer and the type of the side chain are not particularly limited. However, the polymer of the component (A) has a number average molecular weight of from 2,000 to 30, preferably in the range of from 2,000 to 15,000. If the number average molecular weight is more than 30,000, the development residue is liable to occur, and the sensitivity of the mouse is decreased. At the same time, the number average molecular weight or the number of -10-200817840 is less than 2,000, and a considerable amount is generated during development. The film of the unexposed portion is reduced, resulting in insufficient hardening. The alkali-soluble acrylic polymer of the component (A) is a polymer obtained by separately polymerizing or copolymerizing a monomer having an unsaturated double bond such as acrylate, methacrylate or styrene, and is soluble in an aqueous alkali solution. Soluble. Further, in the present invention, an alkali-soluble acrylic polymer obtained by copolymerizing a plurality of types of monomers (hereinafter referred to as a specific copolymer) can also be used as the component (A). In this case, the alkali-soluble acrylic acid of the component (A) may also be a blend of a plurality of specific copolymers. In other words, the specific copolymer is a monomer having a functional group for use in a thermal crosslinking reaction, that is, at least one monomer selected from a monomer group having at least one of a carboxyl group and a phenolic hydroxyl group, and The monomer used for the functional group of the film hardening, that is, at least one monomer selected from a monomer group having at least one of a hydroxyl group other than a phenolic hydroxyl group and an amine group having an active hydrogen, is required to constitute a unit. The copolymer formed has a number average molecular weight of from 2,000 to 30,000. The above-mentioned "monomer having at least one of a carboxyl group and a phenolic hydroxyl group" is a monomer having a carboxyl group, a monomer having a phenolic hydroxyl group, and a monomer having both a carboxyl group and a phenolic hydroxyl group. The monomers are not limited to those having only one carboxyl group or phenolic hydroxyl group, and may be plural. Further, the above-mentioned "a monomer having at least one of a hydroxyl group other than a phenolic hydroxyl group and an amine group having an active hydrogen" contains a monomer having a hydroxyl group other than a phenolic hydroxyl group, a monomer having an active hydrogen-containing amine group, and A monomer having both a hydroxyl group other than a phenolic hydroxyl group and an amine group having an active hydrogen. These monomers are not limited to -11 - 200817840. They are limited to a hydroxyl group having one phenolic hydroxyl group or an amine group having an active hydrogen, and may have a plurality of groups. Specific examples of the above monomers are given below, but are not limited thereto. Examples of the monomer having a carboxyl group include acrylic acid, methacrylic acid, crotonic acid, mono-(2-(acryloxy)ethyl)decanoate, and mono-(2-(mercaptopropenyloxy)oxy group. Ethyl) phthalate, N-(carboxyphenyl)maleic acid imide, N-(carboxyphenyl)methacrylamide, N-(carboxyphenyl)propenamide, and the like. Examples of the monomer having a phenolic hydroxyl group include hydroxystyrene, N-(hydroxyphenyl)acrylamide, N-(hydroxyphenyl)methacrylamide, and N-(hydroxyphenyl)malay. Anhydride, etc. Examples of the monomer having a hydroxyl group other than the phenolic hydroxyl group include 2-hydroxyethyl acrylate, 2-hydroxypropyl acrylate, 5-propenyloxy-6-yl borneyl ketone-2-residue Base-6-endo vinegar, 2-propenylethylmethylpropionate, 2-hydroxypropyl methacrylate, 5-methylpropenyloxy-6-hydroxyborneryl-2-carboxy- 6-lactone and the like. Further, examples of the monomer having an active hydrogen-containing amine group include 2-aminoethyl acrylate and 2-aminomethyl methacrylate. In addition, the specific copolymer may be a monomer having a functional group for thermal crosslinking reaction and a monomer other than a monomer having a functional group for curing the film (hereinafter referred to as another monomer). a copolymer formed by the unit. The other monomer, specifically, a monomer having at least one of a carboxyl group and a phenolic hydroxyl group, and a hydroxyl group other than a phenolic hydroxyl group and an amine group having an active hydrogen group may be copolymerized with at least one monomer of -12-200817840 However, it is not particularly limited as long as it does not impair the characteristics of the component (A). Specific examples of the other monomer include an acrylate compound, a methacrylate compound, a maleic anhydride imide compound, acrylonitrile, maleic anhydride, a styrene compound, and a vinyl compound. Examples of the acrylate compound include methacrylate, ethacrylate, isopropyl acrylate, phenyl methacrylate, naphthyl acrylate, decyl acrylate, decyl methacrylate, and phenyl. Acrylate, 2,2,2-trifluoroethyl acrylate, tert-butyl acrylate, cyclohexyl acrylate, isobornyl acrylate, 2-methoxyethyl acrylate, methoxy triethylene Alcohol acrylate, 2-ethoxyethyl acrylate, tetrahydrofurfuryl acrylate, 3-methoxybutyl acrylate, 2-methyl-2-adamantyl acrylate, 2-propyl-2 - adamantyl acrylate, 8-methyl-8-tridecyl acrylate, and 8-ethyl-8-tricyclodecyl acrylate. Examples of the methacrylate compound include methyl methacrylate, ethyl methacrylate, isopropyl methacrylate, benzyl methacrylate, naphthyl methacrylate, and fluorenyl group. Methacrylate, mercaptomethyl methacrylate, phenyl methacrylate, 2,2,2-trifluoroethyl methacrylate, tert-butyl methacrylate, cyclohexyl methacrylate, Isobornyl methacrylate, 2. methoxyethyl methacrylate, methoxy triethylene glycol methacrylate, 2-ethoxyethyl methacrylate, tetrahydrofurfuryl methyl Acrylate, 3-methoxybutyl methacrylate, 2-methyl-2-adamantyl methacrylate, 2-propyl-2-13-200817840 adamantyl methacrylate, 8-methyl Base-8-tricyclodecyl methacrylate, and 8-ethyl-8-tricyclodecyl methacrylate. Examples of the vinyl compound include methyl vinyl ether, benzyl ethyl ether, 2-hydroxyethyl vinyl ether, phenyl vinyl ether, and propyl vinyl ether. Examples of the styrene compound include styrene, methyl styrene, chlorostyrene, and bromostyrene. Examples of the maleic anhydride imide compound include maleic anhydride imide, N-methyl maleic anhydride, N-phenyl maleic anhydride, and N-cyclohexyl maleic anhydride. Imine and the like. The method of obtaining the specific copolymer used in the present invention is not particularly limited, and for example, it is preferably selected from at least one monomer having at least one of a carboxyl group and a phenolic hydroxyl group, and is suitably selected from the group consisting of At least one monomer of at least one of a hydroxyl group other than a phenolic hydroxyl group and an amine group having an active hydrogen, a monomer other than the above-mentioned monomer, and a polymerization initiator required as necessary are equal to a solvent In the middle, polymerization is carried out at a temperature of 50 to 10 ° C. The solvent to be used at this time is not particularly limited as long as it can dissolve only the monomer and the specific copolymer constituting the specific copolymer. Specific examples thereof include the solvents described in the solvent (F) described later. The specific copolymer thus obtained is generally in the form of a solution in which the specific copolymer is dissolved in a solvent. Further, a solution of the specific copolymer obtained as described above is added to diethyl ether or water or the like and then reprecipitated, and the resulting precipitate is filtered, washed, and then subjected to normal pressure or reduced pressure. It can be used as a powder of a specific copolymer at room temperature or after heating and drying. By doing so, the polymerization initiator or unreacted monomer which coexists with the specific copolymer can be removed, and as a result, the powder of the specific copolymer which is purified can be obtained. If sufficient purification cannot be obtained in one operation, the obtained powder may be redissolved in a solvent, and the above operation may be repeated. In the present invention, the powder of the specific copolymer may be used as it is, or the powder may be redissolved, for example, in a solvent (F) described later to be used in a solution state. &lt;(B) Component> The component (B) is a soluble resin having an aromatic ring or an alicyclic structure base in the main chain. Here, the aromatic ring is a cyclic hydrocarbon such as benzene, naphthalene or anthracene, and the alicyclic ring is a cyclic hydrocarbon such as cyclobutane, cyclopentane, cyclohexane or tricyclodecane. Examples of the alkali-soluble resin having such a ring structure include a polyimide precursor, an alkali-soluble polyimine, a phenol resin for phenol paint, a phenol resin for cresol paint, and a phenol resin for naphthol paint. Among the resins, a polyimine precursor or an alkali-soluble polyimine is preferred from the viewpoint of maintaining high transparency. Further, the alkali-soluble resin of the component (B) is preferably a number average molecular weight of from 2,000 to 30,000, more preferably from 2,000 to 15,000. When the number average molecular weight exceeds 30,000, the development residue is liable to cause a significant decrease in sensitivity, and on the other hand, if the number average molecular weight exceeds 2,000, a considerable amount of unexposed portion is reduced in film formation. And the hardening is insufficient. Further, the alkali-soluble resin of the component (B) is preferably an alkali-soluble resin having an alkyl group substituted by a fluorine atom, and preferably a polyimine precursor having an alkyl group substituted with a fluorine atom. When a polyfluorene-substituted alkyl group having an aromatic ring at this time has a fluorine-substituted alkyl group, transparency can be further improved as compared with a group having no fluorine-substituted alkyl group, and thus the polyimine precursor is used. It is preferably one having a fluorine atom substitution, particularly an alkyl group having 1 to 10 carbon atoms, preferably 1 to 7 carbon atoms, most preferably 1 to 5 carbon atoms. The alkali-soluble resin of the component (B) used as described above is used in an amount of from 0.5 to 100 parts by mass based on 1 part by mass of the alkali-soluble acrylic polymer of the component (A), depending on the resin to be used. Choose a usage ratio. <<Polyimide precursor>> The above-mentioned polyamidiamine precursor contained in the alkali-soluble resin as the component (B) in the positive photosensitive resin of the present invention is polyglycine, polyglycolate, and a part thereof. The imidized polylysine can be generally produced from (a) a tetracarboxylic dianhydride compound and (b) a diamine compound. The (a) tetracarboxylic dianhydride compound to be used in the production of the above-mentioned polyimine precursor used in the present invention is not particularly limited, and one type or two or more types may be used in combination. Specific examples thereof include pyromellitic dianhydride, 3,3',4,4'-biphenyltetracarboxylic dianhydride, and 3,3',4,4'-benzophenonetetracarboxylic acid II. An aromatic tetracarboxylic acid such as anhydride, 3,3',4,4'-diphenyl ether tetracarboxylic dianhydride or 3,3',4,4'-diphenylphosphonium tetracarboxylic dianhydride; 2,3,4-cyclobutane tetracarboxylic dianhydride, 1,2-dimethyl-1,2,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-tetra 1,2-,3,4-cyclobutanetetracarboxylic dianhydride, 1,2,3,4-cyclopentanetetracarboxylic acid-16 - 200817840 dianhydride, 1,2,3,4-cyclohexyl Anthraquinone dianhydride, 3,4-dicarboxytetrahydro-1-naphthalene succinic dianhydride, alicyclic tetracarboxylic dianhydride, fat such as hydrazine, 2, '4-butane tetracarboxylic dianhydride Group tetracarboxylic dianhydride. The (b) diamine compound to be used in the production of the above-mentioned polyimine precursor used in the present invention is not particularly limited, and these may be used alone or in combination of two or more. Specific examples thereof include 2,4-diamine benzoic acid, 2,5-diamine benzoic acid, 3,5-diamine benzoic acid, and 4,6-diamine-1,3-benzenedicarboxylic acid. , 2,5-diamine-1,4-benzenedicarboxylic acid, bis(4-amine-3-carboxyphenyl)ether, bis(4-amine-3,5-dicarboxyphenyl)ether, bis ( 4-Amine-3-carboxyphenyl) fluorene, bis(4-amine-3,5-dicarboxyphenyl) maple, 4,4'-diamine-3,3'-dicarboxybiphenyl, 4,4 '-Diamine _3,3'-dicarboxy-5,5'-dimethylbiphenyl, 4,4'-diamine-3,3'-dicarboxy-5,5'-dimethoxy linkage Benzene, 1,4-bis(4-amine-3-carboxyphenoxy)benzene, 1,3-bis(4-amine-3-carboxyphenoxy)benzene, bis[4-(4-amine-3) -carboxyphenoxy)phenyl]indole, bis[4-(4-amine-3-carboxyphenoxy)phenyl]propane, 2,2-bis[4-(4-amine-3-carboxyphenoxy) Phenyl]hexafluoropropane, 2,4-diaminophenol, 3,5-diamine phenol, 2,5-diamine phenol, 4,6-diamine resorcinol, 2,5-diamine Hydroquinone, bis(3-amine-4-hydroxyphenyl)ether, bis(4-amine-3-hydroxyphenyl)ether, bis(4-amine-3,5-dihydroxyphenyl)ether, bis ( 3-amine-4-hydroxyphenyl)methane, bis(4-amine-3-hydroxyl Phenyl)methane, bis(4-amine-3,5-dihydroxyphenyl)methane, bis(3-amine-4-hydroxyphenyl), bis(4-amine-3-hydroxyphenyl) maple, Bis(4-amine-3,5-di-phenylene)anthracene, 2,2-bis(3-amine-4-hydroxyphenyl)hexafluoropropane, 2,2-bis(4-amino-3- Hydroxyphenyl)hexafluoropropane, 2,2-bis(4-amine-3,5-dihydroxyphenyl)hexafluoropropane, 4,4,-diamine-3,3'-dihydroxybiphenyl, 4 , 4'-diamine-3,3,-dihydroxy-5,5'-dimethylbiphenyl, -17- 200817840 4,4'-diamine-3,3'-dihydroxy-5,5' -dimethoxybiphenyl, 1,4-bis(3-amine-4-hydroxyphenoxy)benzene, 1,3-bis(3-amine-4-hydroxyphenoxy)benzene, 1,4- Bis(4-Amine-3-hydroxyphenoxy)benzene, 1,3-bis(4-amine-3-hydroxyphenoxy)benzene, bis[4-(3-amine-4-hydroxyphenoxy) Phenyl]anthracene, bis[4-(3-amino-4-hydroxyphenoxy)phenyl]propane, 2,2-bis[4-(3-amine-4-hydroxyphenoxy)phenyl]hexa a phenolic hydroxyl diamine compound such as fluoropropane, having 1,3-diamine-4-hydrothiobenzene, 1,3-diamine-5-hydrothiobenzene, 1,4-diamine-2-hydrothiobenzene , bis(4-amine-3-hydrothiophenyl)ether, 2,2 a dithiol compound such as bis(3-amine-4-hydrothiophenyl)hexafluoropropane, having 1,3-diamine benzene-4-sulfonic acid, 1,3-diamine benzene-5 - sulfonic acid, 1,4-diamine benzene-2-sulfonic acid, bis(4-aminobenzene-3-sulfonic acid) ether, 4,4'-diamine biphenyl) 3,3'-disulfonic acid, A diamine compound of a sulfonic acid group such as 4,4'-diamine-3,3'-dimethylbiphenyl-6,6'-disulfonic acid. Further, examples thereof include p-phenylenediamine, m-phenylenediamine, 4,4'-methyl-bis(2,6-ethylaniline), and 4,4'-methyl- Bis(2-isopropyl-6-methylaniline), 4,4'-methyl-bis(2,6-diisopropylaniline), 2,4,6-trimethyl-1,3 - phenyldiamine, 2,3,5,6-tetramethyl-1,4-phenylenediamine, hydrazine-tol-toluidine, hydrazine, 3,3',5,5' -tetramethylbenzidine, bis[4-(3-aminophenoxy)phenyl] maple, 2,2-bis[4-(3-aminophenoxy)phenyl]propane, 2,2-double [4-(3-Aminophenoxy)phenyl]hexafluoropropane, 4,4'-diamine-3,3'-dimethyldicyclohexylmethane, 4,4'-diamine diphenyl ether , 3,4-diamine diphenyl ether, 4,4'-diamine diphenylmethane, 2,2-bis(4-aniline) hexafluoropropane, 2,2-bis(3-aniline) hexafluoro Propane, 2,2-bis(3-amine-4-tolyl)hexafluoropropane, 1,4·bis(4-aminophenoxy)benzene, 1,3-bis(4-aminephenoxy) Benzene, bis[4-(4-aminophenoxy)phenyl]anthracene, 2,2-bis[4-(4-aminophenoxy)phenyl]propan-18- 200817840 alkane, 2,2-double [4-(4-Aminophenoxy)phenyl]hexafluoropropane An equivalent diamine compound. Further, in the compound which is exemplified as the above-mentioned (b) diamine compound, 2,2-bis[4-(4-amino-3-carboxyphenoxy)phenyl]hexafluoropropane is used. 2,2-bis(3-amine-4-hydroxyphenyl)hexafluoropropane, 2,2-bis(4-amine-3-hydroxyphenyl)hexafluoropropane, 2,2.bis(4-amine- 3,5-dihydroxyphenyl)hexafluoropropane, 2,2-bis[4-(3-amine-4-hydroxyphenoxy)phenyl]hexafluoropropane, 2,2-bis(3-amine- 4-hydrothiophenyl)hexafluoropropane, 2,2-bis[4-(3.aminophenoxy)phenyl]hexafluoropropane, 4,4'-diaminediphenylmethane, 2,2- Bis(4-aniline)hexafluoropropane, 2,2-bis(3-aniline)hexafluoropropane, 2,2-bis(3-amine-4-methylphenyl)hexafluoropropane, 2,2-dual a diamine compound of an alkyl group substituted with a fluorine atom such as 4-(4-aminophenoxy)phenyl]hexafluoropropane, and an alkyl group substituted with a fluorine atom by the above (a) tetracarboxylic dianhydride compound Polyimine precursor. When the above polybine imine precursor used in the present invention is produced from the above (a) tetracarboxylic dianhydride compound and the above (b) diamine compound, the compounding ratio of the two compounds, that is, <(b) diamine compound The total molar number > / < (a) the total number of moles of the tetracarboxylic dianhydride compound is preferably from 0.7 to 1.2. As with the general condensation polymerization, the degree of polymerization of the polyimine precursor formed as the molar ratio is closer to 1 is larger, and the molecular weight is increased. Further, when the excess (b) diamine compound is used for polymerization, the terminal amine group at the terminal of the produced polyimide precursor can react with the carboxylic acid anhydride to protect the terminal amine group. Examples of such a carboxylic acid anhydride include phthalic anhydride, trimellitic acid-19-200817840 anhydride, maleic anhydride, naphthalic anhydride, hydrogenated phthalic anhydride, methyl-5-bornene-2,3-di Carboxylic anhydride, itaconic anhydride, tetrahydrophthalic anhydride, and the like. In the production of the above polyimine precursor, the reaction temperature of the reaction of the (a) tetracarboxylic dianhydride compound with the (b) diamine compound is -20 to 150 ° C, preferably selected from the group consisting of - Any temperature from 5 to 100 °C. The reaction temperature is 5 ° C to 40 ° C, and the reaction time is 1 to 48 hours to obtain a high molecular weight polyimine precursor. In order to obtain a polyimide precursor having a low molecular weight and high stability, the reaction temperature is 40 ° C to 90 ° C, and the reaction time is 1 hour or more. Further, the reaction temperature at which the terminal amine group is protected with an acid anhydride is -20 to 150 ° C, preferably at any temperature selected from -5 to 100 °C. The reaction of the above (a) tetracarboxylic dianhydride compound with the above (b) diamine compound can be carried out in a solvent. Examples of the solvent used at this time include N,N-dimethylformamide, n,N-dimethylacetamide, N-methylpyrrolidone, vinylpyrrolidone, and N-methylcaprolactam. , dimethyl sulfoxide, tetramethyl urea, pyridine, dimethyl hydrazine, hexamethyl sulfoxide, m-cresol, γ-butyrolactone, ethyl acetate, butyl acetate, ethyl lactate, 3 - Methoxypropionic acid methyl, 2-methoxypropionic acid methyl, 3-methoxypropionic acid ethyl, 2-methoxypropionic acid ethyl, 3-ethoxypropionic acid ethyl, 2- Ethyl ethoxypropionate, ethylene glycol dimethyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, diethylene glycol methyl ether, propylene glycol dimethyl ether, dipropylene glycol Ether, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, propylene glycol monomethyl ether, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, Dipropylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, carbene-20- 200817840 alcohol acetate, ethyl cellosolve acetate, cyclohexanone, methyl ethyl ketone, methyl isobutyl ketone , 2-heptanone, and the like. These can be used singly or in combination. Further, it may be a solvent which does not dissolve the polyimide precursor, or may be used after being mixed in the above solvent in a range in which the polyimide precursor formed by the polymerization does not precipitate. The solution containing the polyimine precursor thus obtained can be directly used for the preparation of a positive photosensitive resin. Further, the polyimide precursor can be precipitated and separated in a weak solvent such as water, methanol or ethanol, and then recovered. Further, the polyimine precursor is used in an amount of 5 to 100 parts by mass, preferably 10 to 60 parts by mass, per 100 parts by mass of the alkali-soluble acrylic polymer of the component (A). If the amount of the above polyimine precursor is less than the lower limit of the above range, cracks may occur during ITO sputtering. On the other hand, when the amount of the polyimine precursor used exceeds the upper limit of the above range, the transparency after curing is lowered. "Polyimide" Further, as the alkali-soluble resin used as the component (B) of the positive photosensitive resin of the present invention, any polyimine can be used. The polyimide used in the present invention is one in which the polyimine precursor is chemically or thermally heated to 50% or more. Also included in these polyimines are copolymers such as polyamidimine and polyetherimide. The polyimine having an alkyl group substituted with a fluorine atom is preferred, and the number of carbon atoms substituted by a fluorine atom is preferably 1 to 1 Torr, preferably 1 carbon atom, from the viewpoint of improving solubility. Up to 7, it is preferably a polyimine having an alkyl group having 1 to 5 carbon atoms. Polyimine-21 - 200817840 used in the positive photosensitive resin composition of the present invention has a carboxyl group or a phenolic hydroxyl group or has an action of an acid to form a carboxylic acid or a phenolic hydroxyl group because it imparts alkali solubility. The base is good. The method of introducing a carboxyl group or a group can be carried out by using a single method having a carboxyl group or a phenolic hydroxyl group, an amine terminal sealing method using an acid anhydride having a carboxyl group or a phenolic hydroxyl group, or an imidization of a polyimine imine precursor. 99% or less of the method. The method of introducing a carboxylic acid or a group by a reaction of heat or acid may be a method of using a monomer which generates a phenolic hydroxyl group by heat or an acid, or a carboxyl group or a group or imine introduced in advance. A method in which the carboxylic acid residue after the decomposition is decomposed by the action of heat or acid. Thus, the polyimine can be obtained by chemical imidization or thermal imidation after synthesizing the above polybenzazole. Further, the alkali-soluble polyimine is used in an amount of 0.5 g by mass, preferably 1 to 15 parts by mass, based on 100 parts of the alkali-soluble acrylic polymer of the component (A). If the amount of the alkali-soluble quinone is less than the lower limit of the above range, there is a crack in the ITO sputtering. On the other hand, when the amount of the alkali-soluble amine used exceeds the upper limit of the above range, the hard transparency is lowered. &lt;(C) Component> The component (C) has two or more vinyl ether bases in one molecule. This may be a compound having two or more ether groups in one molecule which is thermally crosslinked with the alkali acrylic polymer of the component (A) at a pre-baking temperature, and there is no particular limitation on the type and structure. The compound of the component C) and the alkali-soluble propylene of the component (A) are converted into a phenolic hydroxy group to form a phenolic phenolic hydroxyl group by the square locking ratio of the hot phenolic hydroxyl group. , the soluble ethylene compound after the polyunion. Acid polymerization-22-200817840 After thermal crosslinking, the acid produced by exposure in the presence of a photoacid generator is separated (decrosslinked) from the alkali-soluble acrylic polymer of component (A), and then borrowed The alkali-soluble acrylic polymer of the component (A) can be simultaneously removed by development using an alkali developing solution. Therefore, as the compound of this kind, a vinyl ether compound or the like which is generally used as a component of a vinyl ether type chemical amplification type resist can be used. The use of the compound has the advantage that the shape of the formed film can be controlled by changing the amount of addition of the compound to adjust the thermal crosslinking density. Therefore, among the above-mentioned vinyl ether-based compounds, the compound represented by the formula (1) and the formula (2) is particularly preferable from the viewpoint that no residue or residue is observed in the exposed portion. . [Chemical 1]

(wherein η represents an integer of 2 to 10, k represents an integer of 1 to 10, and R1 represents an η-valent organic group.) [Chemical 2]

(wherein m represents an integer of 2 to 10.) η of the formula (1) represents the number of vinyl ether groups in one molecule, and η is preferably an integer of 2 to 4. Further, m of the formula (2) also represents the number of vinyl ether groups in one molecule, and m is preferably an integer of 2 to 4. 200817840 Specific examples of the compound represented by the above formula (1) and the above formula (2) include bis(4-(vinyloxymethyl)cyclohexylmethyl)glutarate and tris(ethylene glycol). Divinyl ether, divinyl adipate, diethylene glycol divinyl ether, ginseng (4-vinyloxy) butyl trimellitate, bis(4-(vinyloxy)butyl)-p-phenylene And a compound of the component (C), for a total of 100 parts by mass of (A), a total of 100 parts by weight of the compound (A) The component and the component (B) are used, and are used in a ratio of 1 to 80 parts by mass, preferably 5 to 40 parts by mass. When the amount of the compound of the component (C) is less than the lower limit of the aforementioned range, The film reduction of the unexposed portion is remarkable, and the embossed shape of the pattern is not improved. On the other hand, when the amount of the compound of the component (C) exceeds the upper limit of the above range, the sensitivity of the film Or significantly decreased, and the residue between the patterns will be produced after development. &lt;(D) Component> (D) The component has two or more blocks of isocyanic acid in one molecule. a compound which is a film of an alkali-soluble acrylic polymer which is thermally crosslinked with a compound of the component (C) or further decrosslinked with the component (A), for example, The compound having two or more blocked isocyanate groups in one molecule which is thermally hardened after the baking temperature is not particularly limited. The compound of the component (D) has two or more compounds in one molecule. The isocyanate group (-NCO) is blocked by a suitable protecting group, and when exposed to a high temperature at the time of thermal hardening, the protective group (block portion) is thermally dissociated and discharged. The thermosetting functional group (for example, a hydroxyl group other than a phenolic hydroxyl group and an amine group having an active hydrogen) in the alkali-soluble acrylic polymer of the -24-200817840 alkali-soluble acrylic polymer of the isocyanate group (A) component is cross-linked with each other, For example, a group having two or more formulas (3) [Chemical Formula 3] R2—formula (3) Ο Η (wherein R 2 represents an organic group of a block moiety) may be used. Different) A compound having two or more blocked isocyanate groups (D) in one molecule, for example, a compound having two or more isocyanate groups in one molecule can be obtained by using a suitable block agent. Examples of the compound having two or more isocyanate groups in one molecule include isophorone diisocyanate, 1,6-hexamethylene diisocyanate, methyl bis(4-cyclohexyl isocyanate), and top three. a reaction product of a di-methylene diisocyanate or the like, or a dimer, a trimer thereof, or a diol, a triol, a diamine or a triamine. Examples thereof include alcohols such as methanol, ethanol, isopropanol, η-butanone, 2-ethoxyhexanol, 2-indole, hydrazine-dimethylamine ethanol, 2-ethoxyethanol, and cyclohexanol. Phenols such as phenol, hydrazine nitrophenol, ρ-chlorophenol, hydrazine-, m- or P-cresol, decylamine such as ε-caprolactam, acetone oxime, methyl ethyl ketone oxime, Pyridoxazoles such as isobutyl ketone oxime, cyclohexanone oxime, acetophenone benzoquinone, benzophenone oxime, pyrazole, 3,5-dimethylpyrazole, 3-methylpyrazole, etc. , Dodecyl mercaptan, phenyl mercaptan. The compound of the component (D) is a cross-linking reaction of a thermally dissociable isocyanate group which generates a block portion at a high temperature such as a post-bake temperature, but it is not possible at a low temperature such as a pre-bake temperature. The cross-linking of the isocyanate groups is carried out, so that the thermal dissociation temperature of the block portion is much higher than the pre-bake temperature, and for example, a compound of the component (D) is preferably from 120 ° C to 230 t. The compound of the component (D) is exemplified by the following specific examples. [Chemical 4]

In the formula, the isocyanate compound is a compound of the component (D) derived from isophorone diisocyanate. From the viewpoint of heat resistance and film coating properties, the following compounds are exemplified. The ruler in the following formula is not organic. -26- 200817840 [化5]

0 Vh

NH NH γ^γΝ-/ΝΛ^Η〇 ο=Ι\ fly O-R-Ο

-27- 200817840 [Chem. 6]

-28- 200817840

In the present invention, the compound of the component (D) may be used singly or in combination of two or more. Further, the compound of the component (D) is used in an amount of from 1 to 80 parts by mass, preferably from 5 to 40 parts by mass, based on 100 parts by mass of the total of (A) to -29 to 200817840 parts and (B). When the amount of the compound of the component (D) is less than the lower limit of the above range, the thermal curing may be insufficient to obtain a satisfactory cured film, and on the other hand, the compound of the component (D) may be used. When the amount exceeds an excessive amount of the upper limit of the above range, development is insufficient, and development residue is generated. &lt;(E) Component> The component (E) is a photoacid generator (PAG). This is a substance which directly or indirectly generates an acid (sulfonic acid, carboxylic acid, or the like) by irradiation with light used for exposure, and has only such a property. The type, structure, and the like are not particularly limited, but by light It is particularly good to produce sulfonic acid by irradiation. Examples of the photoacid generator of the component (E) include a diazomethane compound, a key salt compound, a sulfonimide compound, a dioxon compound, a sulfonic acid derivative compound, a nitrobenzyl compound, and a benzophenone. The p-toluenesulfonate compound, the iron aromatic hydrocarbon complex, the halogen-containing triazine compound, the acetophenone derivative compound, and the cyano group-containing oxime sulfonate compound. The photoacid generators which have been known in the past or used in the past are not particularly limited and can be suitably used in the present invention. Further, the photoacid generator of the component (E) in the present invention may be used alone or in combination of two or more. Specific examples of the photoacid generator include -30-200817840

Diphenyl iodine chloride, diphenyl iodine trifluoromethane sulfonate, diphenyl iodine mesylate, diphenyl iodine p-toluene sulfonate, diphenyl iodine bromide, Phenyl iodide tetrafluoroborate, diphenyl iodine hexafluoroantimonate, diphenyl iodine hexafluoroarsenate, bis(p-tert-butylphenyl) iodine hexafluorophosphate, Bis(p-tert-butylphenyl) iodine mesylate, bis(p-tert-butylphenyl)iron iodide p-toluenesulfonate, bis(p-tert-butylphenyl) iodine Trifluoromethanesulfonate, bis(p-tert-butylphenyl)iodonium tetrafluoroborate, bis-31 - 200817840 (p-tert-butylphenyl) iodine chloride, double (p- Chlorophenyl) iodine chloride, bis(P-chlorophenyl)iodonium tetrafluoroborate, triphenylphosphonium chloride, triphenylphosphonium bromide, triphenylsulfonium trifluoromethanesulfonate, Tris(P-methoxyphenyl)phosphonium tetrafluoroborate, tris(P-methoxyphenyl)phosphonium hexafluorophosphonate, tris(P-ethoxyphenyl)phosphonium tetrafluoroborate , triphenyl squaride chloride, triphenyl sulphate bromide, tris(P-methoxyphenyl) money tetrafluoroborate, three P- methoxyphenyl) hexafluoropropane scale phosphonate, tris (P- ethoxyphenyl) Rust tetrafluoroborate, [Formula 9]

CH; -32- 200817840 [化 l〇]

ο ο u ϊ (10) h3c&lt;^|-|&lt;^ch3 (17) Q^ULl^H3c〇f4〇H 〇^-|〇 式 (18) Cl

ο ν2ο m II II

Equation (19) Equation (21) 〇FK&gt;23) ο

-33- 200817840 [Chem. 11]

Equation (28)

Ο -d-CF3 type (31) Ο

Formula (33) -34- 200817840 [Chemical 12] π

Equation (37)

p-OH ;-CH3 formula (38)

-O-S-C3H7 type (41)

Ο -O-S-C4H9 II 0 (42)

Ο

Equation (43) Η3

-0-S-CF3 (44) -35- 200817840 [Chem. 13]

-36- 200817840 [Chem. 14]

-37- 200817840 [Chem. 15]

[Chemistry 16]

Further, the photoacid generator of the component (E) is used in an amount of from 5% to 80 parts by mass, preferably from 1 to 80 parts by mass of the component (A) and the component (B) in a total amount of loo. A ratio of 30 parts by mass. When the amount of the photoacid generator of the component (E) is less than the lower limit of the above range, the compound of the component (C) thermally crosslinked upon exposure is dissociated from the alkali-soluble acrylic polymer of the component (A). When the amount of the photoacid generator of the component (E) exceeds the upper limit of the above range, the positive photosensitive resin composition is not sufficiently obtained, and it is difficult to obtain the relief of the desired pattern. Preservation stability will deteriorate. &lt;(F) Solvent&gt; The solvent (F) to be used in the present invention dissolves the components (A) to (E), and dissolves the components (G) and/or (H) to be added as needed. It is only a solvent having such a solubility, and the type, structure, and the like are not particularly limited. Examples of the (F) solvent include ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, methyl cellosolve acetate, ethyl cellosolve acetate, and diethylene glycol monomethyl. Ether, diethylene glycol monoethyl ether, propylene glycol, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, propylene glycol propyl ether acetate, toluene, xylene, methyl ethyl ketone, cyclopentanone, ring Hexanone, 2-heptanone, γ-butyrolactone, ethyl 2-hydroxypropionate, ethyl 2-hydroxy-2-methylpropionate, ethyl ethoxyacetate, ethyl hydroxyacetate, 2-hydroxyl -3 - methyl methylbutanoate, methyl 3-methoxypropionate, ethyl 3-methoxypropionate, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate , methyl pyruvate, ethyl pyruvate, ethyl acetate, butyl acetate, ethyl lactate, butyl lactate, hydrazine, hydrazine-dimethyl-39- 200817840 formamide, N,N-dimethyl Indoleamine, and N-methylpyrrolidone. These solvents may be used alone or in combination of two or more. Among these (F) solvents, propylene glycol monomethyl ether, propylene glycol monomethyl ether acetate, 2-heptanone, propylene glycol propyl ether, propylene glycol propyl ether acetate, ethyl lactate, butyl lactate, etc. It is preferable from the viewpoint of good coating properties and high safety. These solvents are those which can be used for general photoresist materials. &lt;(G) component&gt; The component (G) is an amine compound. The positive photosensitive resin composition of the present invention may further contain an amine compound for the purpose of improving the preservation stability without impairing the effects of the present invention. The amine compound as the component (G) is not particularly limited, and examples thereof include triethanolamine, tributolamine, triisopropanolamine, trimethylamine, triethylamine, tri-n-propylamine, and triisopropyl. Amine amines such as alkamine, tri-n-butylamine, tri-tert-butylamine, trioctylamine, triphenylamine and diazabicyclooctane, aromatic amines such as pyridine and 4-dimethylamine pyridine Further, a primary amine such as benzylamine or n-butylamine or a secondary amine such as diethylamine or di-n-butylamine may be mentioned. The amine compound of the component (G) may be used singly or in combination of two or more. When the amine compound is used, the content of the component (A) and the component (B) is, for example, 0.001 to 5 parts by mass, and may be 0.005 to 1 part by mass, preferably in terms of a total of 100 parts by mass. It is 0.01 to 0.5 parts by mass. When the amount of the amine compound of the component (G) is less than the lower limit of the above range -40 to 200817840, the storage stability of the positive photosensitive resin composition cannot be sufficiently improved, and the component (G) is not sufficiently improved. When the amount of the amine compound used exceeds the upper limit of the above range, the sensitivity of the positive photosensitive resin composition is lowered. &lt;(H) component> The component (H) is a surfactant. The positive photosensitive resin composition of the present invention may further contain a surfactant for the purpose of improving the coatability without impairing the effects of the present invention. The surfactant of the component (H) is not particularly limited, and examples thereof include a fluorine-based surfactant, a polyoxyalkylene-based surfactant, and a nonionic surfactant. As such a surfactant, for example, a Sumitomo 3(Μ) system, a Dainippon Ink Chemical Industry Co., Ltd., or an Asahi Glass Co., Ltd. product can be used. These vending items are readily available and are preferred. Specific examples thereof include F-top EF301, EF303, EF352 (manufactured by Jemco), Megafack F171, F173 (manufactured by Dainippon Ink Chemical Industry Co., Ltd.), Fluorad FC43 0, and FC431 (Sumitomo 3M) )), a fluorine-based surfactant such as Asahiguard AG710, Surflon S -3 8 2 , SC 1 0 1 , SC 1 0 2 , SC 1 0 3 , SC104, SC105, SC106 (made by Asahi Glass Co., Ltd.). The surfactant of the component (H) may be used alone or in combination of two or more. In the case of using a surfactant, the content of the positive photosensitive resin composition of 100% by mass is generally 〇 2% by mass or less, preferably 〇·1% by mass or less. Even if the amount of the surfactant of the component (H) is set to be more than 0.2% by mass, the improvement effect of the above coating property is not good and there is no economic benefit. &lt;Other Additives&gt; The positive-type photosensitive resin composition of the present invention may contain a co-adjusting agent such as a rheology modifier or a decane coupling agent, a pigment, a dye, and a storage stabilizer, as long as the effect of the present invention is not impaired. , an antifoaming agent, or a dissolution promoter such as a polyvalent phenol or a polyvalent carboxylic acid. &lt;Positive-type photosensitive resin composition&gt; The positive-type photosensitive resin composition of the present invention is an alkali-soluble acrylic polymer containing the component (A), an alkali-soluble resin of the component (B), and (C) component having ethylene. An ether group compound, a compound having a blocked isocyanate group of the component (D), a photoacid generator of the component (E), and (F) a solvent, and an amine compound further containing any one of the components (G) as required The composition of the surfactant of (H) component and other additives. Preferred examples of the positive photosensitive resin composition of the present invention are shown below. [1]: The component (B) containing 〇·5 to 100 parts by mass based on 100 parts by mass of the component (A), and the total amount of the component (A) and the component (B) is 100 parts by mass, and contains 1 to 80 parts by mass of the component (C), 1 to 80 parts by mass of the component (D), and 0.5 to 80 parts by mass of the component (E), and these components are dissolved in the positive photosensitive resin composition of the solvent (F). [2] In the composition of the above [1], the positive photosensitive property of the component (G) is contained in an amount of 0.001 to 5 parts by mass based on 1 part by mass of the total of the component (A) and the component (B). Resin composition. In the positive photosensitive resin composition of the above [1] or [2], a positive photosensitive resin composition containing (H) component 〇 2% by mass or less is further contained. The ratio of the solid content in the positive photosensitive resin composition of the present invention is not particularly limited as long as the solvent can be uniformly dissolved in each component, and is, for example, 1 to 80% by mass, for example, 5 to 60% by mass. Or 10 to 50% by mass. Here, the solid component is a solvent from which the entire component of the positive photosensitive resin composition is removed (F). The method for preparing the positive photosensitive resin composition of the present invention is not particularly limited. However, as the preparation method, for example, the component (A) (alkali-soluble acrylic polymer) is dissolved in a solvent (F). The solution is mixed with a predetermined ratio of (B) component (alkali-soluble resin), (C) component (compound having a vinyl ether group), (D) component (compound having a blocked isocyanate group), and (E) component (photoacid) And (H) component (surfactant), a method of making a homogeneous solution, or at the appropriate stage of the preparation method, adding (G) component (amine compound) and/or other additives as necessary The method of mixing. In the preparation of the positive photosensitive resin composition of the present invention, a solution of a specific copolymer obtained by polymerization in (F) a solvent can be used as it is. In this case, the solution of the component (A) is placed in the same manner as described above. When the component (B), the component (c), the component (D), and the like become a homogeneous solution, the solvent may be further added as a target for concentration adjustment. In this case, the (F) solvent used in the formation of the specific copolymer and the (F) solvent used for the concentration adjustment in the preparation of the positive photosensitive resin composition may be the same or may be different. The solution of the positive photosensitive resin composition prepared is preferably filtered using a filter having a pore size of -43 to 200817840 0 · 2 μm or the like. Further, the polyimine which is the same as the above-mentioned (Α) component acrylic polymer of the present invention is widely used as a main polymer in the conventional photosensitive resin materials. However, both of them are in the form of a polymer, and there is a problem that the compatibility is poor. For example, an acrylic monomer and a polyimine (for example, JP-A-H05-55065, JP-A-11-052572, No. 32 At least one of the acrylic monomer and the imine monomer must be used in a monomer form. In the positive photosensitive resin composition of the present invention, the (C) component to the (F) solvent may be contained in addition to the above acrylic polymer (component (A)) and polyimine (component (B)). The stability system which is a problem of the above compatibility which cannot be solved until now can be used for preparing a cured film thereafter. &lt;Coating film and cured film&gt; The positive photosensitive resin composition of the present invention is applied to a semiconductor substrate (for example, a substrate of a ruthenium/bismuth dichloride coated substrate, a tantalum nitride substrate, or a metal such as aluminum, molybdenum or chromium) On the glass substrate, the quartz substrate, the I TO substrate, etc., spin coating, flow coating, roll coating, slit coating, slit coating, and coating by spin coating, spray coating, etc. After the cloth is placed, it is preliminarily dried by a hot plate or an oven to form a coating film. Thereafter, the coating film is subjected to heat treatment to form a positive photosensitive resin film. As the conditions of the heat treatment, for example, a heating temperature and a heating time which are suitably selected from the range of a temperature of 70 ° C to 160 ° C and a time of 0.3 to 60 minutes are employed. The heating temperature and the heating time are preferably 8 (TC to 140 ° C, 0.5 to 1 minute. -44 - 200817840, and the film thickness of the positive photosensitive resin film formed of the positive photosensitive resin composition) For example, 正·1 to, or 〇·2 to ΙΟμιη, or 〇·2 to 5 μπι °, the positive photosensitive resin film formed is formed by heat treatment at the time of formation, and the component (C) has a vinyl ether. The compound of the base is crosslinked by the alkali-soluble acrylic polymer of the (Α) component to further form a film which is insoluble in the alkali developing solution. At this time, if the temperature of the heat treatment is lower than the lower limit of the above temperature range, the heat is exchanged. If the temperature of the heat treatment exceeds the upper limit of the above temperature range and is too high, the thermal cross-linking portion will be cut again, causing no exposure. The positive photosensitive resin film formed by the positive photosensitive resin composition of the present invention is exposed to light such as ultraviolet rays, ArF, KrF, or F2 laser light using a mask having a predetermined pattern. By being included in The action of the acid generated by the photoacid generator (PAG) of the component (E) in the photosensitive resin film, the exposed portion of the film is soluble in the alkaline developing solution. Next, the positive photosensitive resin film The post-exposure heating (PEB) is carried out. The heating condition at this time is a heating temperature and a heating time suitably selected from the range of 80 ° C to 150 ° C for a period of 0.3 to 60 minutes. Thereafter, alkaline imaging is used. The liquid is developed, whereby the exposed photosensitive portion is removed from the exposed portion to form a pattern. The alkaline developing solution to be used may, for example, be barium hydroxide or sodium hydroxide. An aqueous solution of an alkali metal hydroxide, tetramethylammonium hydroxide, hydrogen-45-200817840 tetraethylammonium oxide, an aqueous solution of a fourth-order ammonium hydroxide such as choline, an ethanolamine 'propylamine, an ethylidene diamine An alkaline aqueous solution such as an aqueous amine solution may be added, and a surfactant or the like may be added to the developing solution. The above-mentioned 'tetraethylammonium hydroxide hydrazine·1 to 2.38 mass% aqueous solution can be used as a developing solution for general photoresist. 'Used in the photosensitive resin composition of the present invention In the case of an alkaline developing solution, good development without causing problems such as swelling can be obtained. Further, as the developing method, any one of a liquid pool method, a dipping method, and a immersion dipping method can be used. Generally, it is 丨5 to 18 〇. After the development, the positive photosensitive resin film is washed by running water, for example, for 20 to 90 seconds, and then compressed air or compressed nitrogen is used, or air-dried by centrifugation. The water on the substrate is removed to obtain a film of a pattern. The film is formed into a pattern, and after baking to be thermally cured, the body is heated by using a hot plate, an oven, or the like to obtain excellent heat resistance. A good embossed film of properties such as properties, flatness, low water absorption, and chemical resistance. As a post-grill, it is generally used at a heating temperature selected from the range of 140 ° C to 25 ° C, and the heating plate is carried out for 5 to 30 minutes. In the case of an oven, it is treated for 30 to 90 minutes. The method. However, by this post-baking, a cured film having a good pattern shape for the purpose can be obtained. As described above, according to the positive photosensitive resin composition of the present invention, it is possible to form a coating having a fine pattern while forming a film having a sufficiently high sensitivity and in fact that no film of the unexposed portion is observed at the time of development -46 - 200817840 membrane. As described above, the positive photosensitive resin composition of the present invention contains the above-mentioned (A) component to (F) solvent and optionally contains (G) component and/or (H) component, and is composed of the resin. The cured film is obtained as a cured film which does not cause film damage such as cracks during sputtering. Therefore, it is possible to obtain good effects for various liquid film materials such as array planarizing films of TFT type liquid crystal elements which are not suitable for chemically amplified photoresists, and for use in various film materials and microlenses in organic EL displays. [Embodiment] [Examples] Hereinafter, the present invention will be described in more detail with reference to examples but the present invention is not limited to these examples. [Acronym used in the examples] The abbreviations used in the following examples have the following meanings &amp; spear: ° MAA: methacrylic acid MMA: methyl methacrylate HEMA: 2-hydroxyethyl methacrylate CHMI : N-cyclohexylmaleic anhydride imide imine AIBN : azobisisobutyronitrile CBDA : cyclobutane tetracarboxylic dianhydride ABL: 2,2'-trifluoromethyl-4,4'-diamine biphenyl NMP : N-methylpyrrolidone-47- 200817840 ΤΑ : trimellitic anhydride 6FDA: 4,4'-(hexafluoroisopropylidene) dicarboxylic acid dianhydride DDS: 4,4'-diamine diphenyl hydrazine DBA : 3 , 5-diamine benzoic acid PGMEA: propylene glycol monomethyl ether acetate PGME: propylene glycol monomethyl ether PAG 1 : Ciba Specialty Chemicals (stock) CGI1397 (trade name) (2-methyl-α[ 5-[ [(propylsulfonyl)oxy]imide]-2(5Η)-thienophene]phenylacetonitrile) PVE1 : 1,4-cyclohexanedimethanol divinyl ether

NC01 : DegussaAG V E S T A G ON (registered trademark) B 1 065 (trade name) [Chem. 17]

(wherein R represents an organic group.)

N C Ο 2 : D e gu s s a A G system V E S T A G ON (registered trademark) B F 1 5 4 0 (trade name) -48- 200817840 [Chem. 18]

(In the formula, R represents an organic group.) R30: Megafack R-3 大 (trade name) manufactured by Dainippon Ink Chemical Industry Co., Ltd. GT4 : Daicel Chemical Industry Co., Ltd. Epolead GT-401 (trade name) (epoxidation) Butane tetracarboxylate -(3-cyclohexenylmethyl)-modified ε-caprolactone) MPTS: γ-methacryloxypropyltrimethoxydecane Ρ200: Toyo Synthetic Industry Co., Ltd. 200 (trade name) 4,4'-[1-[4-[1-(4-hydroxyphenyl)-1methylethyl]phenyl]ethylidene]bisphenol 1 molar and 1,2- Photosensitive agent P5 synthesized by the condensation reaction of naphthoquinone-2-diazide-5-sulfonyl chloride 2 molar: ResitopPSM-4327 (trade name) manufactured by Qunrong Chemical Industry Co., Ltd. P6 resin for phenol paint : Jiushan Petrochemical Co., Ltd. is a copolymer of MARUKA LYNCUR CHM (trade name) polyhydroxystyrene and 2-hydroxyethyl methacrylate. [Measurement of the number average molecular weight and the weight average molecular weight] The number average molecular weight of the specific copolymer obtained in the following synthesis example and the weight average molecular weight of -49 to 200817840 are used in a GPC apparatus (Shodex (registered trademark) column manufactured by JASCO Corporation. KF803 L and KF804L) were measured by flowing the solvent tetrahydrofuran at a flow rate of 1 ml/min in a column (column temperature of 4 ° C) and dissolving it. Further, the following numerical average molecular weight (hereinafter referred to as Μη.) and weight average molecular weight (hereinafter referred to as Mw°) are expressed in terms of polystyrene. [Production of Specific Copolymer, Polyimine, and Polyimine Precursor] &lt;Synthesis Example 1 &gt; As a monomer component constituting a specific copolymer, 'MAA 15.5 g, CHMI 35.3 g, HEMA 25.5 g, MM were used. A 23.7g, using AIBN 5g as a free-machine polymerization initiator, this polymerization was carried out in a solvent PGMEA 200g at a temperature of 60 ° C to 10 ° C to obtain Mn4, l〇〇, Mw7, 600 ( A) A solution of a component (specific copolymer) (specific copolymer concentration: 27.5 mass%). (P1) &lt;Synthesis Example 2 &gt; CBDA 25.0 g ^ ABL 48.0 g was reacted in NMP 242.1 at 23 ° C for 24 hours to obtain a polyimine precursor solution. TA 8.6 g and 34.6 g of NMP were added to the solution of the polyimide precursor solution, and the reaction was carried out at 23 ° C for 24 hours to obtain a component (B) having a Μη of 4,000 and a Mw of 7,400 (the amine terminal of the amine group was blocked). A solution of the amine precursor) (polyimine precursor concentration: 20.0% by mass). (P2) -50- 200817840 &lt;Synthesis Example 3 &gt; 50.00.0 g of the polybendimimine precursor solution (p 2) obtained in Synthesis Example 2 was diluted with 250.0 g of N-methylpyrrolidone, and then acetic anhydride 35.8 was added. g and pyridine 27·6 g were subjected to a dehydration ring-closure reaction at 23 ° C for 2 hours. This solution was poured into a 50% aqueous methanol solution, and then dried by filtration to obtain a powder of (B) component (polyimine). The obtained polyimine had a Μη of 4,000, an Mw of 7,400, and an imidization ratio of 78%. (Ρ3) &lt;Synthesis Example 4 &gt; 6FDA 17.8 g, DDS 4.92 g, and DBA 3.12 g were reacted at 75 ° C for 20 hours in PGMEA 145.6 to obtain a component (B) having a Μη of 4,200 and a Mw of 8,400. A solution of (polyimine precursor). (P4) [Production of Positive Photosensitive Resin Composition] &lt;Examples 1 to 3 and Comparative Examples 1 to 4 &gt; According to the composition shown in Table 1 below, the mixture of the components (A) was mixed at a predetermined ratio. a solution of the component (B) or the component (B) (the component (B) is not contained in the comparative example), the component (C), the component (D), the component (E), and the solvent (F), and the component (H) is further mixed. The mixture was stirred at room temperature for 3 hours to obtain a homogeneous solution, and the positive photosensitive resin compositions of the respective examples and comparative examples were prepared. -51 - 200817840 [Table i] (A solution of A sincerity (g) (B戚分*(g) (C) Component (g) (D戚(g) (E戚(g) (F) Solvent (g) (H 戚 (g) Example 1 P1 P2 PVE1 NC01 PAG1 PGMEA R30 9.0 8.25 0.62 0.41 0.21 3.75 0.0028 Example 2 P1 P3 PVE1 NC01 PAG1 PGMEA R30 14.3 0.21 0.62 0.41 0.21 5.75 0.0028 Example 3 P1 P4 PVE1 NC01 PAG1 PGMEA R30 10.5 8.25 0.62 0.41 0.21 2.75 0.0028 Comparative Example 1 P1 - PVE1 NC01 PAG1 PGMEA R30 15 0.62 0.41 0.21 5.75 0.0028 Comparative Example 2 P1 - PVE1 NC02 PAG1 PGMEA R30 15 0.62 0.41 0.21 5.75 0.0028 Comparative Example 3 P5 - PVE1 NC01 PAG1 PGMEA R30 15 0.62 0.41 0.21 5.75 0.0028 Comparative Example 4 P6 - PVE1 NC01 PAG1 PGME R30 15 0.62 0.41 0.21 5.75 0.0028 * P2 and P4 are solutions of component (B) &lt;Comparative Example 5 &gt; As an alkali-soluble acrylic polymer, In 5.5 g of the specific copolymer solution (P1) obtained in Synthesis Example 1, P200 as a l.lg of a 1,2-quinonediazide compound and GT4 as an epoxy crosslinkable compound of 1.lg were mixed. 0.003 9g of R30 as a surfactant, 0.25 as a adhesion aid The MPTS of g, 25.6 g of PGMEA as a solvent, was stirred at room temperature for 8 hours to adjust a positive photosensitive resin composition. The compositions of Examples 1 to 3 and Comparative Examples 1 to 5 were obtained. The items were evaluated for each of the sensitivity, the film reduction (unexposed portion), the high light transmittance (transparency) after the high temperature firing -52 - 200817840, the ITO sputtering resistance, the MEA resistance, and the heat resistance. Further, when a cured film was obtained from the positive photosensitive resin composition, in Comparative Example 5, photobleaching was performed at the stage before and after the development of the image, and on the other hand, Examples 1 to 1 and Comparative Examples were used. 1 to 4, post-exposure heating (PEB) was carried out at the stage after the photobleaching, after the exposure and before the development, whereby the evaluation steps of the two were different as follows. [Evaluation of Sensitivity] &lt;Examples 1 to 3, Comparative Examples 1 to 4 &gt; The positive photosensitive resin composition was applied onto a tantalum wafer by spin coating, and then at a temperature of 110 ° C for 120 seconds. After pre-baking on a hot plate, a coating film having a film thickness of 2·5 μm was formed. The film thickness was measured using F20 manufactured by FILMETRICS. Ultraviolet rays having a light intensity of 5.5 mW/cm 2 in 3 65 nm were irradiated on the coating film by a canon-made ultraviolet irradiation apparatus PLA-600FA for a certain period of time, which was carried out at a temperature of 110 ° C on a hot plate for 120 seconds. Heat after exposure (PEB). Thereafter, the film was immersed in an aqueous solution of 0.4% by mass of tetramethylammonium hydroxide (hereinafter referred to as TMAH) for 60 seconds, and then washed with ultrapure water for 20 seconds. The minimum exposure amount (mJ/cm2) in which no dissolution occurred in the exposed portion was used as the sensitivity. &lt;Comparative Example 5 &gt; The positive photosensitive resin composition was applied to a crucible wafer by spin coating into -53-200817840, and then pre-baked on a thermostat at i2 sec. Then, a coating film having a film thickness of 2·5 μm was formed. The film thickness was measured using F20 manufactured by FILMETRICS. The coating film was irradiated with ultraviolet light having a light intensity of 5 . 5 m W / cm 2 at a wavelength of 5 65 nm by a UV irradiation device PLA-600FA manufactured by a canon, and then oxidized at 0.4% by mass. After immersing in an aqueous solution of tetramethylammonium (hereinafter referred to as TMAH) for 60 seconds and developing the image, it was washed with ultrapure water for 20 seconds. The minimum exposure amount (mJ/cm2) in which no residue remained in the exposed portion was used as the sensitivity. [Evaluation of film reduction] The positive photosensitive resin composition was applied by spin coating on a tantalum wafer, and then pre-baked on a hot plate at a temperature of 110 ° C for 120 seconds to form a film thickness of 2.5 μm. Coating film. The film was immersed in a 0.4 mass% TMAH aqueous solution for 60 seconds, and then washed with ultrapure water for 20 seconds. Next, the degree of film reduction of the unexposed portion caused by the development was evaluated by measuring the thickness of the film. The film thickness in this evaluation was measured using F20 manufactured by FILMETRICS. [Evaluation of ITO Sputter Resistance] The positive photosensitive resin composition was applied by spin coating on a tantalum wafer, and then pre-baked on a hot plate at a temperature of 11 ° C for 120 seconds to form a film thickness of 2.5. Ππι coating film. The coating film was heated at 230 ° C for 30 minutes and then post-baked to form a cured film having a film thickness of 1.9 μm. On the coating film, ruthenium sputtering was carried out under the conditions of a ruthenium film thickness of 5000 Å, a sputtering pressure of 3535 Pa, an Ar flow rate of -54 to 200817840, 74 cm3/min, a substrate heating temperature of 200 ° C, and a sputtering time of 37.6 minutes. The surface of the sputtered film was observed with an optical microscope, and if there was no crack on the surface, it was X, and the crack was X. [Evaluation of Transparency] &lt;Examples 1 to 3, Comparative Examples 1 to 4 &gt; The positive photosensitive resin composition was applied onto a quartz substrate by spin coating, and then at a temperature of 12 (TC for 120 seconds). After pre-baking on a hot plate, a coating film having a film thickness of 2.5 μm was formed, and the coating film was immersed in a 0.4 TMAH aqueous solution for 60 seconds, and then washed with ultrapure water for 20 seconds, followed by 30 minutes at 230 ° C. After heating, it was post-baked to form a cured film having a film thickness of 1.9 μm. The cured film was measured at a wavelength of 200 to 800 nm using an ultraviolet visible spectrophotometer (SHIMADZU UV-25 50 model manufactured by Shimadzu Corporation). The coating film was heated at 30 ° C for 30 minutes, and the transmittance was measured. The film thickness of the evaluation was measured using F20 manufactured by FILMETRICS Co., Ltd. &lt;Comparative Example 5 &gt; Positive photosensitive resin composition After coating with a spin coating on a quartz substrate, the film was pre-baked on a hot plate at a temperature of 120 ° C for 120 seconds to form a coating film having a film thickness of 2·4 μm. The coating film was applied to a 0.4 TMAH aqueous solution. After immersing for 60 seconds, enter in ultrapure water The film was washed with water for 20 seconds, and the coating film was irradiated with ultraviolet light having a light intensity of 5.5 mW/cm 2 at 3 65 nm at a light intensity of 5.5 mJ/cm 2 at -55 to 200817840 by a canon (manufactured by ultraviolet light irradiation apparatus PLA-600FA). Then, it was heated at 23 ° C for 30 minutes to carry out post-baking to form a cured film having a film thickness of 1.9 μm. The cured film was obtained by using an ultraviolet visible spectrophotometer (SHIMADZU UV-2550 model manufactured by Shimadzu Corporation) to 200~ The measurement was carried out at a wavelength of 8.0 nm, and the coating film was heated at 25 ° C for 30 minutes, and the transmittance was measured. The film thickness in the evaluation was measured using F20 manufactured by FILMETRICS Co., Ltd. [Evaluation of MEA tolerance] &lt;Implementation Examples 1 to 3 and Comparative Examples 1 to 4 &gt; The positive photosensitive resin composition was applied onto a quartz substrate by spin coating, and then preliminarily heated on a hot plate at a temperature of 120 ° C for 120 seconds. After baking, a coating film having a film thickness of 2·5 μm was formed, and the coating film was immersed in a 0.4 mass% TMAH aqueous solution for 60 seconds, and then washed under ultrapure water for 20 seconds, followed by a temperature of 2 3 0 °. After heating at C for 30 minutes, the mixture was post-baked to form a film thickness of ΐ.9μιη. The film was immersed in monoethanolamine at a heating temperature of 60 ° C for 20 minutes, and then washed with pure water for 20 seconds, and then at a temperature of 180 ° ((:: dried on a hot plate for 10 minutes) After the measurement, the film thickness and the transmittance were measured. The film thickness after the post-roasting and the MEA treatment, the film thickness after drying, and the change in the non-transmittance were MEA resistance, and the decrease was X. &lt;Comparative Example 5 &gt; The positive photosensitive resin composition was applied onto a quartz substrate by spin coating, and then pre-baked on a hot plate at a temperature of 120 ° C for 120 seconds to form a film thickness. 2·5μιη coating film. The coating film was immersed in an aqueous solution of 0.44 mass - 56 - 200817840 % AH for 60 seconds, and then washed with ultrapure water for 20 seconds. The coating film was irradiated with 800 mJ/cm 2 of ultraviolet light having a light intensity of 5.5 mW/cm 2 at 365 nm of an ultraviolet irradiation apparatus PLA-600FA manufactured by ea η ο η (fraction), and then at a temperature of 23 0 ° C by 30 After heating for a minute, it was grilled to form a cured film having a film thickness of 1.9 μm. The coating film was immersed in monoethanolamine at a heating temperature of 60 ° C for 20 minutes, and then washed under pure water for 20 seconds. Subsequently, the film was dried on a hot plate at 180 ° C for 10 minutes, and then the film thickness and transmittance were measured. The film thickness after post-roasting and the MEA treatment, the film thickness after drying, and the change in non-transmittance were MEA resistance, and the decrease was X. [Evaluation of Heat Resistance] From the above [Evaluation of Resistance to MEA], a substrate having a thickness of 1·9 μm was formed by changing the substrate from a quartz substrate to a wafer other than the same method. The peeling of the cured film was measured by DTA-TG. The mass of the sample was reduced by ί. The temperature of 5 mass% was evaluated as 5% mass reduction temperature. [Evaluation Results] The results of the evaluations carried out above are shown in Table 2 below. -57- 200817840 [Table 2] Sensitivity (mJ/cm2) Film reduction ※ (μηι) ITO sputtering resistance transmittance (%) MEA resistance 5% mass reduction temperature (. Example 1 25 and j\\\ 〇81 〇305 Example 2 23 〇90 〇305 Example 3 27 &gt;frrr ΙΙΠ! J\\\ 〇78 〇305 Comparative Example 1 23 &gt;fnT No X 92 〇305 Comparative Example 2 35 Μ j\\\ X 92 〇 305 Comparative Example 3 40 4nr ΙΜΓ J\\\ 〇20 X 250 Comparative Example 4 35 赃X 65 X 240 Comparative Example 5 120 0.2 X 92 X 305 * No "film reduction" means no film reduction was observed from the measurement results. For each of Examples 1 to 3, the film having high sensitivity was not observed in the measurement results in the unexposed portion, and the ITO sputtering resistance was high and the transmittance was high, and the resistance to MEA was also high. Examples 1 and 2 were high-sensitivity, and the film of the unexposed portion was not observed in fact, and although it showed high transmittance, MEA resistance, and heat resistance, crack phenomenon was observed in ITO sputtering. Comparative Example 3 has ITO sputtering resistance, but the transmittance and heat resistance were deteriorated and the film was reduced after MEA treatment. Comparative Example 4 is seen in ITO sputtering. In the slit, the transmittance and heat resistance were deteriorated, and the film was reduced after the MEA treatment. Comparative Example 5 showed a film reduction in the unexposed portion at a low sensitivity, a crack was observed in the ITO sputtering, and a permeation by the MEA treatment was observed. -58 - 200817840 Industrial Applicability The positive-type photosensitive resin composition of the present invention is suitable as a thin film transistor (TFT) liquid crystal display element, a protective film for a narrow display, a planarization film, an insulating film, and the like. Various electronic materials such as a layered protective film of a TFT-type liquid crystal element, an array flattening film, a reflective display film, and an insulating film of an organic EL element, etc., are used for forming various kinds of display such as "element EL elements". The material of the cured film, especially the insulating film, the concave material on the underside of the reflective film of the color filter device, and is also suitable as the micro-59-

Claims (1)

200817840 X. Patent Application No. 1 A positive photosensitive resin composition characterized by containing the following (A) component, (B) component, (C) component, (D) component, and (E) solvent; a component: a group having at least one group selected from a carboxyl group and a phenolic hydroxyl group, and at least one group selected from a hydroxyl group other than a phenolic hydroxyl group and an active hydrogen group, and having an alkali solubility of a number average molecular weight of 2,000 to 30,000 Acrylic polymer (B) Component: an alkali-soluble resin having an aromatic ring or an alicyclic structure in the main chain (C) Component: a compound having two or more vinyl ether groups in one molecule (D) Component: 1 molecule Compound (E) of two or more blocked isocyanate groups: Photoacid generator (F) Solvent. 1 . The positive-type photosensitive resin composition of claim 1, wherein the component (B) is an alkali-soluble resin selected from the group consisting of polyimine and polyimine precursors. 3. The positive photosensitive resin composition of claim 1 or 2, wherein the alkali-soluble resin of the component (B) has a number average molecular weight of 2,000 to 30,000. 4. The positive photosensitive resin composition according to any one of claims 1 to 3, wherein the component (B) is an alkali-soluble resin having an alkyl group substituted with a fluorine atom. The positive photosensitive resin composition according to any one of claims 1 to 4, wherein the component (B) is an alkali-soluble resin containing polyimide, for 100 parts by mass In the case of the component (A), it contains 5 to 20 parts by mass of the polyimine. The positive photosensitive resin composition according to any one of claims 1 to 4, wherein the component (B) is an alkali-soluble resin containing a polyimide precursor, for 100 parts by mass ( A) The component contains 5 to 1000 parts by mass of the polyimine precursor. The positive photosensitive resin composition according to any one of claims 1 to 6, wherein the component (E) is a compound which generates a sulfonic acid by irradiation with light. The positive-type photosensitive resin composition according to any one of claims 1 to 7, which further contains an amine compound as the component (G). The positive-type photosensitive resin composition according to any one of claims 1 to 8, which further contains a fluorine-based surfactant as (H) into . (1) A cured film obtained by using the positive photosensitive resin composition according to any one of claims 1 to 9. 1 1 An interlayer insulating film characterized by a cured film as in the first aspect of the patent application. 1 2 · A microlens characterized by a cured film as claimed in claim 10 of the patent application. -61 - 200817840 Seven designated representatives: (1) The representative representative of the case is: No (2), the representative symbol of the representative figure is a simple description: No. 8. If there is a chemical formula in this case, please reveal the characteristics that can best show the invention. Chemical formula: none